2SD1253资料

Min 60 80
Typ
Max
(7.6)
Unit V
400 400 700 700 1 40 15 2.0 1.5 30 0.4 1.2 0.5 250
µA µA mA V V MHz µs µs µs
Emitter-base cutoff current (Collector open) Forward current transfer ratio
10
Transition frequency fT (MHz)
103
25˚C
103
TC=100˚C
1
TC=100˚C
102
–25˚C
102
25˚C –25˚C
0.1
10
10
0.01 0.01
0.1
1
10
1 0.01
0.1
1
10
1 0.01
0.1
1
10
Collector current IC (A)
Collector current IC (A)
*
Symbol VCEO ICES ICEO
Conditions IC = 30 mA, IB = 0 VCE = 60 V, VBE = 0 VCE = 80 V, VBE = 0 VCE = 30 V, IB = 0 VCE = 60 V, IB = 0 VEB = 5 V, IC = 0 VCE = 4 V, IC = 1 A VCE = 4 V, IC = 3 A VCE = 4 V, IC = 3 A IC = 4 A, IB = 0.4 A VCE = 5 V, IC = 0.5 A, f = 1 MHz IC = 4 A IB1 = 0.4 A, IB2 = − 0.4 A VCC = 50 V
4.4±0.5
0 to 0.4
14.4±0.5
3.0+0.4 –0.2
1.5+0 –0.4
1
This product complies with the RoHS Directive (EU 2002/95/EC).
2SD1253, 2SD1253A
PC Ta
50
6
(1)TC=Ta (2)With a 50×50×2mm Al heat sink (3)Without heat sink (PC=1.3W)
This product complies with the RoHS Directive (EU 2002/95/EC).
Power Transistors
2SD1253, 2SD1253A
Silicon NPN triple diffusion planar type
For power amplification Complementary to 2SB0930, 2SB0930A
Unit V
1 2
2.0±0.5
■ Absolute Maximum Ratings TC = 25°C
Collector-emitter voltage 2SD1253 (Base open) 2SD1253A Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation
4.4±0.5
Parameter Collector-base voltage (Emitter open) 2SD1253 2SD1253A
Symbol VCBO VCEO VEBO IC ICP PC Ta = 25°C Tj Tstg
Rating 60 80 60 80 5 4 8 40 1.3 150 −55 to +150
8.5±0.2
Unit: mm
3.4±0.3 1.0±0.1 6.0±0.2
10.0±0.3 1.5±0.1
■ Features
• High forward current transfer ratio hFE which has satisfactory linearity • Low collector-emitter saturation voltage VCE(sat) • N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment.
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products, and no license is granted under any intellectual property right or other right owned by our company or any other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other company which may arise as a result of the use of technical information described in this book. (3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: – Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. – Any applications other than the standard applications intended. (4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions (operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS, thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages. (7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.
102
Collector current IC (A)
10 ICP
IC
t=10ms
t=1ms
10
1
t=300ms
1
0.1
2SD1253A 2SD1253
10−1
0.01
1
10
100
1000
10−2 10−4
10−3
10−2
10−1
1
10
102
103
104
Collector-emitter voltage VCE (V)
TC=25˚C
IC VCE
8
IC VBE
VCE=4V 25˚C
Collector power dissipation PC (W)
40
(1)
5
IB=150mA 100mA
Collector current IC (A)
4
80mA 60mA
30
3
40mA 30mA
Collector current IC (A)
6
TC=100˚C
–25˚C
4
20
2
20mA 10mA
2
10
(2) (3)
1
5mA
0
0
40
80
120
160
0
0
0 4 8 12 16 20
0
0.4
0.8
1.2
1.6
2.0
2.4
Ambient temperature Ta (°C)
Collector-emitter voltage VCE (V)
Base-emitter voltage VBE (V)
V
(6.5)
V A A W °C °C
1: Base 2: Collector 3: Emitter N-G1 Package
Note) Self-supported type package is also prepared.
Junction temperature Storage temperature
Publication date: March 2004
R 40 to 90
Q 70 to 150
P 120 to 250
SJD00170BED
(1.5)
0.8±0.1 R = 0.5 R = 0.5 2.54±0.3 1.0±0.1 1.4±0.1 0.4±0.1 5.08±0.5 (8.5) (6.0) 1.3 3
■ Electrical Characteristics TC = 25°C ± 3°C
Parameter Collector-emitter voltage (Base open) Collector-emitter cutoff current (E-B short) Collector-emitter cutoff current (Base open) 2SD1253 2SD1253A 2SD1253 2SD1253A 2SD1253 2SD1253A IEBO hFE1
Time t (s)
2
SJD00170BED
Request for your special attention and precautions in using the technical information and semiconductors described in this book
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
100
IC/IB=10
hFE IC
104
VCE=4V
fT I C
104
VCE=10V f=1MHz TC=25˚C
Forward current transfer ratio hFE
hFE2 Base-emitter voltage Collector-emitter saturation voltage Transition frequency Turn-on time Strage time Fall time VBE VCE(sat) fT ton tstg tf