Large-area nanoenabled macroelectronic substrates

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专利名称:Large-area nanoenabled macroelectronic substrates and uses therefor
发明人:Xiangfeng Duan,Chunming Niu,Stephen Empedocles,Linda T. Romano,Jian
Chen,Vijendra Sahi,Lawrence Bock,David
Stumbo,J. Wallace Parce,Jay L. Goldman
申请号:US11405864
申请日:20060418
公开号:US20060211183A1
公开日:
20060921
专利内容由知识产权出版社提供
专利附图:
摘要:A method and apparatus for an electronic substrate having a plurality of semiconductor devices is described. A thin film of nanowires is formed on a substrate. The thin film of nanowires is formed to have a sufficient density of nanowires to achieve an operational current level. A plurality of semiconductor regions are defined in the thin film of nanowires. Contacts are formed at the semiconductor device regions to thereby provide electrical connectivity to the plurality of semiconductor devices. Furthermore, various materials for fabricating nanowires, thin films including p-doped nanowires and n-doped nanowires, nanowire heterostructures, light emitting nanowire heterostructures, flow masks for positioning nanowires on substrates, nanowire spraying techniques for depositing nanowires, techniques for reducing or eliminating phonon scattering of electrons in nanowires, and techniques for reducing surface states in nanowires are described.
申请人:Xiangfeng Duan,Chunming Niu,Stephen Empedocles,Linda T. Romano,Jian Chen,Vijendra Sahi,Lawrence Bock,David Stumbo,J. Wallace Parce,Jay L. Goldman 地址:Mountain View CA US,Palo Alto CA US,Menlo Park CA US,Sunnyvale CA
US,Mountain View CA US,Menlo Park CA US,Encinitas CA US,Belmont CA US,Palo Alto CA US,Mountain View CA US
国籍:US,US,US,US,US,US,US,US,US,US
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