NCE01H11

gFS
有 VDS=25V,ID=57A
90
-
-
S
Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics (Note 4)
Clss Coss Crss
VDS=25V,VGS=0V,
科技F=1.0MHz
- 6500
-
PF
-
380
-
PF
-
330
-
PF
Turn-on Delay Time Turn-on Rise Time
td(on) tr
安VDD=30V,ID=2A,RL=15Ω
-
26 24
-
nS nS
Turn-Off Delay Time Turn-Off Fall Time
达td(off) tf
限 TJ-Junction Temperature(℃)
Figure 1 Output Characteristics
有 Figure 4 Rdson-JunctionTemperature
Vgs Gate-Source Voltage (V)
技
科
安
达
众
市 Vgs Gate-Source Voltage (V) 圳 Figure 2 Transfer Characteristics
Qg Gate Charge (nC)
Figure 5 Gate Charge
深
ID- Drain Current (A)
Is- Reverse Drain Current (A)
Rdson On-Resistance(mΩ)
ID- Drain Current (A)
Figure 3 Rdson- Drain Current
1）EAS test Circuits
司
公
限
有
2）Gate charge test Circuit:
科技
安
达
众
市
圳
深 3）Switch Time Test Circuit：
电话：（０７５５）２７８５８６６７ ２７８５８６６１ 传真：（０７５５）２７８５８７０７
Page 3

BVDSS IDSS IGSS
VGS(th) RDS(ON)
VGS=0V ID=250μA VDS=100V,VGS=0V
司 100 113
-
-
-
1
V μA
VGS=±20V,VDS=0V
公-
-
±100
nA
VDS=VGS,ID=250μA VGS=10V, ID=40A
限2
3
-
7.8
4 9
V mΩ
Forward Transconductance Dynamic Characteristics (Note4)
Unit
V V A A A W W/℃ mJ ℃
电话：（０７５５）２７８５８６６７ ２７８５８６６１ 传真：（０７５５）２７８５８７０７
Page 1

Pb Free Product
NCE01H11
Thermal Characteristic
Thermal Resistance,Junction-to-Case(Note 2)
GENERAL FEATURES
● VDS =100V,ID =110A
RDS(ON) <9mΩ @ VGS=10V
司 Schematic diagram
● High density cell design for ultra low Rdson ● Fully characterized Avalanche voltage and current
ID
ID (100℃)
IDM PD
Single pulse avalanche energy (Note 5)
EAS
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
100 ±20 110 78 440 220 1.47 1100 -55 To 175
Pb Free Product
NCE01H11
NCE N-Channel Enhancement Mode Power MOSFET
DESCRIPTION
The NCE01H11 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
ID- Drain Current (A)
Pb Free Product
NCE01H11
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS (Curves)
Normalized On-Resistance
司
公
Vds Drain-Source Voltage (V)
VGS=10V,RG=2.5Ω
-
91
-
nS
-
39
-
nS
Total Gate Charge Gate-Source Charge Gate-Drain Charge
Qg
众Qgs 市 Qgd
VDS=30V,ID=30A, VGS=10V
-
163
-
31
-
64
nC nC nC
圳 Drain-Source Diode Characteristics
Page 5

Pb Free Product
NCE01H11
TO-220-3L Package Information
Symbol
A A1 b b1 c c1 D E E1 e e1 F H h L L1 V I Φ
司
公
限
有
技
科
安
达
Dimensions In Millimeters
Diode Forward Voltage (Note 3)
VSD
VGS=0V,IS=40A
-
1.2
V
深 Diode Forward Current (Note 2)
Reverse Recovery Time
IS
-
-
110
A
trr
TJ = 25°C, IF = 40A
-
42
nS
Reverse Recovery Charge
市
TO-220 top view
Package Marking And Ordering Information
圳 Device Marking
Device
Device Package

深 NCE01H11
NCE01H11
TO-220
Reel Size -
Tape width -
Quantity -
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Vsd Source-Drain Voltage (V)
Figure 6 Source- Drain Diode Forward
电话：（０７５５）２７８５８６６７ ２７８５８６６１ 传真：（０７５５）２７８５８７０７
Page 4

C Capacitance (pF)
0.047
0.055
10.010
10.350
0.394
0.407
8.500
8.900
0.335
0.350
12.060
12.460
2.540（TYP.）
0.475
0.491
0.100（TYP.）
4.980
5.180
0.196
0.204
2.590
2.890
0.102
0.114
8.440 REF.
0.332 REF.
Pb Free Product
NCE01H11
司
公
限
Vds Drain-Source Voltage (V)
Figure 7 Capacitance vs Vds
有TJ-Junction Temperature(℃) 技Figure 9 BVDSS vs Junction Temperature
科
安
5. EAS condition：Tj=25℃,VDD=50V,VG=10V,L=0.5mH,Rg=25Ω
电话：（０７５５）２７８５８６６７ ２７８５８６６１ 传真：（０７５５）２７８５８７０７
Page 2

Pb Free Product
NCE01H11
Test circuit
众 Min
Max
市4.470
4.670
圳2.520
0.710
2.820 0.910
Dimensions In Inches
Min
Max
0.176
0.184
0.099
0.111
0.028
0.036
深 1.170 0.330
1.370 0.650
0.046 0.013
0.054 0.026
1.200
1.400
0.000
0.300
0.000
0.012
13.400
13.800
0.528
0.543
3.560
3.960
0.140
0.156
6.360 REF.
0.250 REF.
6.300 REF.
0.248 REF.
3.735
3.935
0.147
0.155
电话：（０７５５）２７８５８６６７ ２７８５８６６１ 传真：（０７５５）２７８５８７０７
r(t),Normalized Effective Transient Thermal Impedance
Square Wave Pluse Duration(sec)
Figure 11 Normalized Maximum Transient Thermal Impedance
电话：（０７５５）２７８５８６６７ ２７８５８６６１ 传真：（０７５５）２７８５８７０７
● Power switching application
技
● Hard Switched and High Frequency Circuits ● Uninterruptible Power Supply
科
Marking and pin Assignment
安
100% UIS TESTED!
达
众 100% ΔVds TESTED!
RθJC
0.68
℃/W
Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min Typ Max Unit
Off Characteristics
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current On Characteristics (Note 3) Gate Threshold Voltage Drain-Source On-State Resistance
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous Drain Current-Continuous(TC=100℃) Pulsed Drain Current Maximum Power Dissipation Derating factor
公
● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation
限
● Special process technology for high ESD capability
有
Application
Qrr
di/dt = 100A/μs(Note3)
-
66
nC
Forward Turn-On Time
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production
达
众
市
圳 深 Vds Drain-Source Voltage (V)
Figure 8 Safe Operation Area
TJ-Junction Temperature(℃)
Figure 10 VGS(th) vs Junction Temperatur
ID- Drain Current (A)