FOSAN富信电子 MOS管 FS3420-产品规格书

安徽富信半导体科技有限公司
ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO.,LTD.
FS3420 SOT-23-3L20V N Channel Enhancement沟道增强型
MOS Field Effect Transistor场效应管
▉Absolute Maximum Ratings最大额定值
Characteristic特性参数Symbol符号Rat额定值Unit单位Drain-Source V oltage漏极-源极电压BV DSS20V Gate-Source Voltage栅极-源极电压V GS+10V Drain Current(continuous)漏极电流-连续I D（at T A=25°C） 6.8A Drain Current(pulsed)漏极电流-脉冲I DM28A Total Device Dissipation总耗散功率P D(at T A=25°C)1500mW Thermal Resistance Junction-Ambient热阻RΘJA100℃/W Junction/Storage Temperature结温/储存温度T J,T stg-55~150℃
▉Device Marking产品字标
FS3420=AN
ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO.,LTD.
FS3420
▉Electrical
Characteristics 电特性
(T A =25℃unless otherwise noted 如无特殊说明，温度为25℃)
Characteristic 特性参数
Symbol 符号Min 最小值Type 典型值Max 最大值Unit 单位Drain-Source Breakdown Voltage
漏极-源极击穿电压(I D =250uA,V GS =0V)BV DSS 20——V Gate Threshold Voltage
栅极开启电压(I D =250uA,V GS =V DS )V GS (th)0.450.65 1.0V
Zero Gate Voltage Drain Current
零栅压漏极电流(V GS =0V,V DS =20V)I DSS ——1u A Gate Body Leakage
栅极漏电流(V GS =+10V,V DS =0V)
I GSS
—
—+100n A
Static Drain-Source On-State Resistance 静态漏源导通电阻(I D =6.8A,V GS =10V)(I D =5A,V GS =4.5V)(I D =4A,V GS =2.5V)
R DS(ON)—
141822182239m Ω
Diode Forward Voltage Drop
内附二极管正向压降(I SD =1A,V GS =0V)V SD ——1V Input Capacitance 输入电容(V GS =0V,V DS =10V ,f=1MHz)
C ISS —888—pF Common Source Output Capacitance 共源输出电容(V GS =0V,V DS =10V,f=1MHz)C OSS —133—pF Reverse Transfer Capacitance
反馈电容(V GS =0V,V DS =10V,f=1MHz)C RSS —117—pF Total Gate Charge 栅极电荷密度(V DS =10V,I D =6.8A,V GS =4.5V)Q g —11—nC Gate Source Charge 栅源电荷密度(V DS =10V,I D =6.8A,V GS =4.5V)Q gs —2—nC Gate Drain Charge 栅漏电荷密度(V DS =10V,I D =6.8A,V GS =4.5V)Q gd
—3—nC Turn-ON Delay Time 开启延迟时间
(V DS =10V I D =6.8A,R GEN =3Ω,V GS =4.5V)t d(on)—7—ns Turn-ON Rise Time 开启上升时间
(V DS =10V I D =6.8A,R GEN =3Ω,V GS =4.5V)t r —46—ns Turn-OFF Delay Time 关断延迟时间(V DS =10V I D =6.8A,R GEN =3Ω,V GS =4.5V)t d(off)—30—ns Turn-OFF Fall Time 关断下降时间
(V DS =10V I D =6.8A,R GEN =3Ω,V GS =4.5V)
t f
—
52
—
ns
ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO.,LTD.
FS3420■Typical Characteristic Curve典型特性曲线
Figure1:Output Characteristics Figure2:Transfer Characteristics
Figure3:On-Resistance vs.Drain Current Figure4:On-Resistance vs.Temperature
Figure5:Capacitance Characteristics Figure6:Gate-Charge Characteristics
ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO.,LTD.
FS3420■Typical Characteristic Curve典型特性曲线
Figure7:Drain Current vs.Temperature Figure8:Safe Operating Area
Figure9:Transient Thermal Response Curve
安徽富信半导体科技有限公司
ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO.,LTD.
FS3420▉Dimension外形封裝尺寸
Symbol Dimensions In Millimeters Dimensions In Inches Min Max Min Max
A 1.050 1.2500.0410.049 A10.0000.1000.0000.004 A2 1.050 1.1500.0410.045 b0.3000.5000.0120.020 c0.1000.2000.0040.008
D 2.820 3.0200.1110.119
E 1.500 1.7000.0590.067 E1 2.650 2.9500.1040.116 e0.950TYP0.037TYP
e1 1.800 2.0000.0710.079 L0.600REF0.024REF
L10.3000.6000.0120.024θ0o8o0o8o。