GS2N7002资料

GS2N7002
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Characteristics Curve
GS2N7002
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元器件交易网
ISSUED DATE :2004/09/15 REVISED DATE :2006/01/17B
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(2)
Symbol Tj, Tstg
Ratings -55 ~ +150 60 ±20 ±40 500 800 225 556
Unit : V V V mA mA mW : /W
VDS VGS
50us)
(1)
VGSM ID IDM PD RthJA

Continuous Drain Current
Electrical Characteristics (Tj = 25 : unless otherwise specified)
(1)The Power Dissipation of the package may result in a continuous train current.
GS2N7002
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元器件交易网
ISSUED DATE :2004/09/15 REVISED DATE :2006/01/17B
60V 4.5 500mA
Description
The GS2N7002 is universally used for all commercial-industrial surface mount applications.
Package Dimensions
REF. A A1 A2 D E HE
Millimeter Min. Max. 0.8 1.10 0 0.10 0.8 1.00 1.80 2.20 1.15 1.35 1.80 2.40
REF. L1 L b c e Q1
Millimeter Min. Max. 0.42 REF. 0.15 0.35 0.25 0.40 0.10 0.25 0.65 REF. 0.15 BSC.
元器件交易网
Pb Free Plating Product
ISSUED DATE :2004/09/15 REVISED DATE :2006/01/17B
GS2N7002
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
Parameter Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Body Leakage Current Zero Gate Voltage Drain Current On-State Drain Current Static Drain-Source on-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance (2)Pulse Width 300us, Duty cycle 2%. Symbol BVDSS VGS(th) IGSS IDSS ID(ON) RDS(ON) GFS Ciss Coss Crss Min. 60 1 500 80 Typ. Max. 2.5 ±100 1 5 4.5 50 25 5 mS pF pF pF VDS=25V, VGS =0V, f=1MHz Unit V V nA uA mA Test Conditions VGS=0, ID=250uA VDS=2.5V, ID=0.25mA VGS=±20V, VDS=0 VDS=60V, VGS =0 VDS=7.5V, VGS=10V ID=50mA, VGS =5V ID=500mA, VGS=10V VDS>2 VDS(ON), ID=200mA
Absolute Maximum Ratings at Ta = 25 :
Parameter Operating Junction and Storage Temperature Range Drain-Source Voltage Gate-Source Voltage Continuous Non-repetitive (tp Pulsed Drain Current Power Dissipation Thermal Resistance ,Junction-to-Ambient