2SC3743资料

Thermal resistance Rth (°C/W)
102
(1)
10
(2)
1
10−1 10−3
10−2
10−1
1
10
102
103
104
Time t (s)
SJD00109AED
3
Request for your special attention and precautions in using the technical information and semiconductors described in this book
3
400mA 300mA
1
40
(1)
25˚C
2
200mA 100mA
TC=100˚C
0.1–25˚C源自20(2)1(3)
50mA 20mA
0
0
40
80
120
160
0
0
2
4
6
8
10
12
0.01 0.01
0.1
1
Ambient temperature Ta (°C)
Collector-emitter voltage VCE (V)
14.0±0.5
0.8±0.1
2.54±0.3 5.08±0.5
1 2 3
1: Base 2: Collector 3: Emitter EIAJ: SC-67 TO-220F-A1 Package
■ Electrical Characteristics TC = 25°C ± 3°C
Parameter Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Symbol VCEO ICBO IEBO hFE1 hFE2 Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Turn-on time Storage time Fall time VCE(sat) VBE(sat) fT ton tstg tf Conditions IC = 10 mA, IB = 0 VCB = 900 V, IE = 0 VEB = 7 V, IC = 0 VCE = 5 V, IC = 0.1 A VCE = 5 V, IC = 0.8 A IC = 0.8 A, IB = 0.16 A IC = 0.8 A, IB = 0.16 A VCE = 5 V, IC = 0.1 A, f = 1 MHz IC = 0.8 A IB1 = 0.16 A, IB2 = − 0.32 A VCC = 250 V 4 1.0 4.0 1.0 6 6 0.6 1.2 V V MHz µs µs µs Min 800 50 50 Typ Max Unit V µA µA
1 000
Base-emitter saturation voltage VBE(sat) (V)
Forward current transfer ratio hFE
10
100
25˚C TC=100˚C
10
1
100˚C
TC=–25˚C
10
–25˚C
1
tf
25˚C
0.1
1
0.1
ton
0.01 0.01
1
This product complies with the RoHS Directive (EU 2002/95/EC).
2SC3743
PC Ta
80
5
(1)TC=Ta (2)With a 100×100×2mm Al heat sink (3)Without heat sink (PC=2.0W)
Collector current IC (A)
6 ICP
4 IC
−IB2
VCC
2
tw
0 0 400 800 1 200 1 600
VCLAMP
Collector-emitter voltage VCE (V)
Rth t
103
(1)PT=10V×0.3A(3W) and without heat sink (2)PT=10V×1.0A(10W) and with a 100×100×2mm Al heat sink
Collector current IC (A)
VBE(sat) IC
IC/IB=5
hFE IC
VCE=5V
ton , tstg , tf IC
Turn-on time ton , Storage time tstg , Fall time tf (µs)
100
Pulsed tw=1ms Duty cycle=1% IC/IB=5 (2IB1=–IB2) VCC=250V TC=25˚C tstg
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products, and no license is granted under any intellectual property right or other right owned by our company or any other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other company which may arise as a result of the use of technical information described in this book. (3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: – Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. – Any applications other than the standard applications intended. (4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions (operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS, thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages. (7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: January 2003
SJD00109AED
Collector current IC (A)
10
ICP
IC t=1ms t=10ms
1
DC
0.1
0.01
1
10
100
1 000
Collector-emitter voltage VCE (V)
2
SJD00109AED
This product complies with the RoHS Directive (EU 2002/95/EC).
This product complies with the RoHS Directive (EU 2002/95/EC).
Power Transistors
2SC3743
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
0.7±0.1
Unit: mm
10.0±0.2 5.5±0.2
4.2±0.2
4.2±0.2 2.7±0.2
■ Features
• High-speed switching • Wide safe operation area and high breakdown voltage • Satisfactory linearity of forward current transfer ratio hFE • Full-pack package which can be installed to the heat sink with one screw
0.1
1
0.1 0.01
0.1
1
10
0.01
0
0.4
0.8
1.2
1.6
2.0
Collector current IC (A)
Collector current IC (A)
Collector current IC (A)
Safe operation area
100
Non repetitive pulse TC=25˚C
16.7±0.3
7.5±0.2
φ 3.1±0.1
Solder Dip (4.0)
1.4±0.1
1.3±0.2 0.5+0.2 –0.1
■ Absolute Maximum Ratings TC = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (E-B short) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Base current Collector current Peak collector current Collector power dissipation Ta = 25°C Junction temperature Storage temperature Tj Tstg Symbol VCBO VCES VCEO VEBO IB IC ICP PC Rating 900 900 800 7 1 3 5 40 2 150 −55 to +150 °C °C Unit V V V V A A A W