MULTILAYER FILM FOR ULTRAVIOLET LIGHT
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专利名称：MULTILAYER FILM FOR ULTRAVIOLET LIGHT 发明人：SAWAMURA MITSUHARU 申请号：JP11875778 申请日：19780927 公开号：J P S554 5061A 公开日：19800329
摘要：PURPOSE:To let the light beams of a far ultraviolet region be reflected at a high rate by providing alternate layers of the dielectrics of intermediate refractive indices having no absorption in ultraviolet region and low refractive index dielectrics on the alternate layers of high refractive index dielectrics having absorption in ultraviolet region and low refractive index dielectrics. CONSTITUTION:In the production of the multilayer films which reflects the light of wavelengths 200-250nm used for far ultraviolet light lithography effectively and transmits light of more than wavelength 250nm, the high refractive index dielectrics H of a refractive index 1.9 or higher such as of ZrO2, the dielectrics L of low refractive index of a refractive index 1.5 or lower and the dielectrics M having the refractive index of the intermediate of the foregoing two such as Al2O3 are laminated on a base (quartz, etc.) to 40nm of optical film thickness for the first layer H, 50nm for the 2nd up to 6th layer in alternate lamination of the layers H, L and 65nm for the 7th up to 15th layer in alternate lamination of the layers M, L. Thereby, the high reflectances may be obtained in less number of layers and the manufacturing becomes easier.
申请人：CANON KK
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专利名称：MULTILAYER FILM FOR ULTRAVIOLET LIGHT 发明人：SAWAMURA MITSUHARU 申请号：JP11875778 申请日：19780927 公开号：J P S554 5061A 公开日：19800329
摘要：PURPOSE:To let the light beams of a far ultraviolet region be reflected at a high rate by providing alternate layers of the dielectrics of intermediate refractive indices having no absorption in ultraviolet region and low refractive index dielectrics on the alternate layers of high refractive index dielectrics having absorption in ultraviolet region and low refractive index dielectrics. CONSTITUTION:In the production of the multilayer films which reflects the light of wavelengths 200-250nm used for far ultraviolet light lithography effectively and transmits light of more than wavelength 250nm, the high refractive index dielectrics H of a refractive index 1.9 or higher such as of ZrO2, the dielectrics L of low refractive index of a refractive index 1.5 or lower and the dielectrics M having the refractive index of the intermediate of the foregoing two such as Al2O3 are laminated on a base (quartz, etc.) to 40nm of optical film thickness for the first layer H, 50nm for the 2nd up to 6th layer in alternate lamination of the layers H, L and 65nm for the 7th up to 15th layer in alternate lamination of the layers M, L. Thereby, the high reflectances may be obtained in less number of layers and the manufacturing becomes easier.
申请人：CANON KK
更多信息请下载全文后查看
ห้องสมุดไป่ตู้