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氨基-咪唑酮及其作为治疗认知缺损、阿尔兹海默病、神经变性和痴

氨基-咪唑酮及其作为治疗认知缺损、阿尔兹海默病、神经变性和痴

专利名称:氨基-咪唑酮及其作为治疗认知缺损、阿尔兹海默病、神经变性和痴呆的药物的用途
专利类型:发明专利
发明人:斯蒂芬·伯格,乔格·霍伦兹,凯瑟琳娜·霍格丁,卡林·科尔莫丁,尼克拉斯·普洛贝克,迪迪尔·罗蒂希,费尔南多
·塞格尔梅布尔
申请号:CN200780030470.0
申请日:20070612
公开号:CN101506212A
公开日:
20090812
专利内容由知识产权出版社提供
摘要:本发明涉及具有以右结构式I的新颖化合物及其可药用盐、组合物和使用方法。

这些新颖的化合物可用于治疗或预防认知缺损、阿尔茨海默病、神经变性和痴呆。

申请人:阿斯利康(瑞典)有限公司,阿斯特克斯医疗公司
地址:瑞典南泰利耶
国籍:SE
代理机构:北京市柳沈律师事务所
代理人:封新琴
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无人化桥式起重机检验方案研究

无人化桥式起重机检验方案研究

*基金项目:建设智能制造标准试验验证公共服务平台“5G 新一代信息技术与钢铁行业融合”(2021-0173-3-1)无人化桥式起重机检验方案研究*王 栓1 张卫斌1 张 勇1 陆顺峰1 王朱涛21江苏省特种设备安全监督检验研究院 苏州 215600 2江苏沙钢集团有限公司 苏州 215625摘 要:桥式起重机是现代生产中常用的一种起重运输机械,广泛应用于工厂、码头和仓库等场所。

当前,无人化、自动化是起重机械发展的一个重要方向,然而当前我国尚缺少对无人化起重机的配置、功能、检验等方面的相关标准。

为此,文中结合正在起草的《无人化起重机通用技术要求》标准,对自动化无人起重机械的配置、功能及检验方案进行了研究和讨论,希望以此能对无人化自动起重机的规范化、标准化实施有所帮助。

关键词:无人化桥式起重机;自动化;检验方案;标准;研究中图分类号:TH215 文献标识码:A 文章编号:1001-0785(2024)2-0074-06Abstract: As a kind of hoisting and transporting machinery commonly used in modern production, bridge crane is widely used in factories, docks and warehouses. Unmanned and automated crane is an important direction of crane development. However, there is a lack of relevant standards for unmanned crane configuration, function and inspection in China. Therefore, the author studies and discusses the configuration, function and inspection scheme of automatic unmanned crane in combination with the standard of "General Technical Requirements for Unmanned Crane" being drafted, hoping to contribute to the standardization and standardization of unmanned automatic crane.Keywords: unmanned bridge crane; automation; inspection scheme; standard; research0 引言市场监管总局印发的《特种设备安全与节能事业发展“十四五”规划》指出,要切实提高特种设备安全监管效能,加快起重机械损伤感知与健康监测技术创新。

pre-gastrulation developmental

pre-gastrulation developmental

pre-gastrulation developmentalWhat is Pre-gastrulation Developmental Phase?Pre-gastrulation developmental phase refers to the early stage in embryonic development before the formation of the gastrula. During this critical phase, various crucial events occur that lay the foundation for the subsequent formation of the three germ layers that give rise to the different tissues and organs in the developing embryo. In this article, we will explore the pre-gastrulation developmental phase in detail, discussing its key stages and the processes that take place during this time.1. Fertilization and Cleavage:The pre-gastrulation phase begins with fertilization, where a sperm fuses with an egg to form a zygote. Following fertilization, the zygote undergoes cleavage, a process of rapid cell divisions. These divisions result in the formation of blastomeres, smaller cells that make up the blastula.2. Blastula Formation:As cleavage continues, the blastomeres divide and rearrange, leading to the formation of a hollow ball-like structure called ablastula. The blastula consists of an outer layer of cells, known as the trophoblast, and an inner cell mass.3. Compaction and Morula Formation:During this stage, the blastomeres undergo a process called compaction, where they tightly adhere to each other, forming a compacted ball of cells called a morula. Compaction is crucial for the subsequent differentiation of embryonic cells.4. Blastocyst Formation:At this point, the morula undergoes further cell divisions and differentiation, resulting in the formation of a blastocyst. The blastocyst consists of two distinct cell populations: the inner cell mass (ICM) and the outer trophoblast layer. The ICM gives rise to the embryo, while the trophoblast layer contributes to the formation of extraembryonic structures such as the placenta.5. Implantation:The blastocyst moves towards the uterine lining and undergoes implantation, a process where it buries itself into the endometrium. This establishes a connection between the embryo and the maternal blood supply, allowing for nutrient and gas exchange.6. Formation of the Three Germ Layers:Following implantation, the pre-gastrulation phase progresses further as the blastocyst differentiates into the three germ layers: ectoderm, mesoderm, and endoderm. This process is known as gastrulation. The ectoderm gives rise to the nervous system, skin, and other ectodermal tissues. The mesoderm gives rise to the skeletal system, muscles, heart, and blood vessels. The endoderm gives rise to the gastrointestinal tract, respiratory system, and other endodermal tissues.7. Germ Layer Migration and Differentiation:During gastrulation, cells from each of the three germ layers undergo migration and differentiation to form specific tissues and organs. For example, ectodermal cells migrate to form the neural tube, which develops into the brain and spinal cord. Mesodermal cells differentiate to form muscles, bones, and internal organs. Endodermal cells give rise to the lining of the digestive and respiratory tracts.8. Organogenesis:As gastrulation progresses, the three germ layers continue todifferentiate and form the rudiments of various organs. This process, known as organogenesis, involves intricate cell interactions, proliferation, and remodeling to shape and develop organs such as the heart, lungs, liver, and kidneys.In conclusion, the pre-gastrulation developmental phase is a crucial period in embryonic development. It involves key events such as fertilization, cleavage, blastula, and blastocyst formation, implantation, gastrulation, and organogenesis. These processes play a fundamental role in establishing the basic body plan of the developing embryo, paving the way for its subsequent growth and differentiation into a complex multicellular organism.。

《中国地震》第21卷(2005年)总目录

《中国地震》第21卷(2005年)总目录

《中国地震》第21卷(2005年)总目录第21卷第4期(536~540)2005年12月中国地震EARTHQUAKERESEARCHINCHINAV01.21No.4Dec.20o5《中国地震》第21卷(2005年)总目录第1期福州市活断层探测与地震危险性评价………………………………………………………………………………………………………朱金芳黄宗林徐锡伟郑荣章方盛明白登海王广才阂伟闻学泽韩竹军(1)应用于城市活断层调查的地震方法技术…………………………………………徐明才高景华刘建勋荣立新(17)中小地震宽频带辐射能量的单台测定………………………………………………………史勇军吴忠良徐果明(24)华北地区大地震矩释放率和GPS应变率的一致性研究…………………………万永革沈正康甘卫军王爱军(33)昆仑M8.1地震前青藏块体北,东缘水平运动变形的关联特征…………………………王双绪张希张晓亮(41)区域矿震与地震的定量识别方法及其应用…………………刘希强杜贻合徐波李红沈萍张萍(50)新疆北天山中东段地区震源参数研究……………………………………………赵翠萍夏爱国郑斯华陈章立(61)川滇地区单断裂强震区与多断裂强震区…………………………………………………………………………龙思胜(70)顺义地裂缝成因与顺义一良乡断裂北段第四纪活动性讨论……………………张世民刘旭东任俊杰刘光勋(84)青海拉脊山断裂带新活动特征的初步研究……………………………袁道阳张培震雷中生刘百篪刘小龙(93)近期国际地震预测预报研究进展的几个侧面…………………………………………………………吴忠良蒋长胜(103)焰山,高山——内蒙古阿尔山火山群中的两座活火山………………白志达田明中武法东徐德兵李团结(113)克山县尖山火山…………………………………………………………陈洪洲杨森林高峰陶汝朋潘玉林(118)2004年全球灾害地震的灾情综述………………………………………………………………………李卫平赵荣国(123)2004年震情述评………………………………………………………………………………李纲刘杰余素荣(130)第2期声波探测显示的渤海湾西部全新世断层活动……………………………………赵根模赵国敏杨港生王大宏(139)由"重复地震"给出的中国地震台网的定位精度估计…………………………………………………蒋长胜吴忠良(147)对现今地壳变形资料在地震区划中应用的初步探讨…………………………………………………周本刚周庆(155)用双三次样条函数模拟青藏高原东北缘重力场动态图像………………………祝意青胡斌李辉蒋锋云(165)东秦岭内部铁炉子断裂带的最新走滑活动…………………………………………………杨晓平邓起东冯希杰(172)云南建水一蒙自一带冲沟走滑断错及其意义…………………………马保起李德文苏刚侯治华舒赛兵(184)岩石水压致裂和诱发地震的实验研究………………………………颜玉定李亚林张专欧阳立胜谢明富(193)Hilbert.Huang变换与地震信号的时频分析……………………………武安绪吴培稚兰从欣徐平林向东(207)华北活动地块区南缘阜南一霍邱地区地壳活动习性初探……………………………………………姚大全刘加灿(216)1303年山西8级大震研究刍议……………………………………………………………………………………齐书勤(224)黄土地区地震滑坡的分布特征及其影响因素分析………………………………陈永明石玉成刘红玫卢育霞(235)2003年12月1日新疆昭苏 6.1级地震序列特征分析………………………………………杨欣聂晓红夏爱国(244)昌平台Sacks体应变仪观测曲线年变现象成因研究……………………………………………………………张凌空(254)近20年华北地电阻率异常空间演化及强震短期前兆判别标志研究……………………郑文俊田山邵永新(260)地下水位短临异常演化特征及其与地震关系的研究……………………………陆明勇牛安福陈兵彭立国(269)云南历史地震记载与强震目录再析……………………………………………………………………邓瑞生王彬(280) 从怀来4井水化学异常变化分析流体在孕震过程中的作用……………………宋晓冰张常慧宋贯一王吉易(285)昌平台钻孔应变观测资料的可靠性研究…………………………………………王勇杨选辉刘福生张国红(291)第3期1879年武都南8级大地震及其同震破裂研究…………………………侯康明雷中生万夫岭李丽梅熊振(295)4期《中国地震》第2l卷(2005年)总目录537印尼苏门答腊9.0级地震前地震活动图像异常特征研究………………………………广东及邻区地震的震源机制特征………………………………………康英杨选云南地区地震活动能量场的时空分布特征………………………………………………中国大陆构造应力应变场现今年变化特征的数值模拟………………陈连旺杨树新利用层析成像的结果探讨安徽及邻区中强地震深部构造背景………………??张杰镜泊湖全新世火山喷发特征………………………………………………………………,极震区黄土微结构的试验研究……………………………………………………………青藏块体中北部中强地震前弱震活动统计特征研究…………………马禾青盛菊琴姚安地震序列与永胜地震序列的高精度定位……………………………………王新岭区域地震状态的损伤张量分析……………………………………………………………?主成分分析法在地震预测中的应用研究………………………………王炜林命迥定量分析地震活动的活跃与平静特征………………………………黄建平马丽电磁干扰实验研究……………………………………………张继红李波韩海华中国古籍中的地震海啸记录………………………………………………………………城市群震后交通快速评估研究……………………………………………………………?地震活动性研究及其应用于地震预测的一些问题………………………………………?第4期薛艳宋治平梅世蓉(311)吕金水陈杏陈贵美(320)…………罗国富杨明芝(332)谢富仁陆远忠郭若眉(341)沈小七王行舟沈业龙(350)陈洪洲马宝君高峰(360)李兰王兰民刘旭(369)赵卫明任雪梅金春华(378)刘杰张国民赵翠萍(386)…………钟继茂程万正(398)马钦忠吴耿锋吴绍春(409)陈时军G.A.Papadopoulos(417)李润贤佟瑞清赵会蓬(429)王锋刘昌森章振铨(437)…………何萍李志强(444)……………………王健(451)地震预测的信度方法………………………………………………………………石雅锡张晓东金声震周民都(457)现今区域活动块体划分方法研究………………………………………张晓亮江在森陈兵王琪张希(463)2003年西藏波密南M5.7地震现场考察…………………………………………何玉林曹忠权陈立春陈亚明(469)2001年施甸震群非弹性衰减及震源参数特征研究………………………………刘丽芳刘杰苏有锦付虹(475)中国大陆地区中强地震前加卸载响应比异常时间尺度的统计研究………………………张晖辉尹祥础梁乃刚(486)天山各分区地震活动性与能量积累阶段关系初探…………………………………………李莹甄沈军王海涛(496)岩石模量与应变振幅关系的实验研究及理论解释………………………………包雪阳施行觉温丹李成波(508)R/S分析及其在地震磁效应研究中的应用………………………………………杨涛刘庆生李西京曹国栋(519)地震和地震海啸中报道死亡人数随时间变化的一个简单模型………………………………………刘倬吴忠良(526)减小直流输电对地磁观测影响的几种办法………………………………………沈红会张秀霞冯志生孙春仙(530)《中国地震》第21卷(2005年)总目录 (536)EARTHQUAKERESEARCHINCHINAGeneralContents,V oi.21(2O05)NO.1 ActiveFaultsExplorationandSeismicHazardAssessmentinFuzhouCity'''''''''''''''ZhuJinfan gHuangZonglinXuXiwei ZhengRongzhangFangShengmingBaiDenghaiWangGuangcaiMinWeiWenXuezeHanZ h~un(1) ApplicationoftheSeismicMethodtoDetectingActiveFaults…………XuMingcaiGaoJinshuaLiuJianxunRongLixin(17) EstimateofRadiatedEnergyofSmalltoModerateEarthquakesUsingaSingleStationDataat LocaltoRegionalDistances………………………………..'………………………………….……一shiYon~unWuZhongliangXuGuoming(24) OntheConsistencyofLargeEarthquakeMomentandStrainRateInferredfromGPSDatainN orthChina''.'....'.''''''''''''''………'…''………………'…''…………………………WanY onggeShenZhengkangGanWeijunWangAijun(33) ConnectedFeaturesofHorizontalMovementandDeformationinTheNonhemandEastern MarginsoftheQinghai-XizangBlock538中国地震2l卷BeforetheKunlunMs8.1Eathquake……''''''''…'''''…''…''''''……WangShuangxuZhangXiZhangXiaoliang(41) TheModeIdentificationMethodandItsApplicationtoRegionalMineandNatureEarthquak es'…'''''…'''''……''''''''''…''…''''''''''…'''''' LiuXiqiangDuYiheXuBoLiHongShenPingZhangPing(50) StudyonSourceParametersofEarthquakesOccu~edontheMiddle—EastAreaofNorthernTianshaninXinjiang'''''''''……''''''''…'…''''''…'…'''''…'''…'''''.''''…'' ZhaoCuipingXiaAignoZhenShihuaChenZhangli(61)Single'FaultStrongEa~hquakeRegionsandMulti—FaultsStrongEa~hquakeRegionsintheSichuan—YunnanRegion'''…'''……'''''''''…''''''''.'''……'''…………''''''…'''''''…'''''……………'''…'……………..LongSisheng(70)QuaternaryActivitiesofNo.hemSegmentoftheShunyi—LiangxiangFault'……………'''………'''''''''………'''…'……''…'''…'' ZhangShiminLiuXudongRenJunjieLiuGuangxun(84) APreliminaryStudyontheNewActivityFeaturesoftheishanMountMnFaultZoneinQin曲aiProvince……………?…一'''''…''…'''''…''…'…'…'''…''……YuanDaoyangZhangPeizhenLeiZhongshengLiuBaiehiLiuXiaolong(93) From"EarthquakesCannotBePredicted"to"ASeismicShiftinThinking"!AReviewofSomeDevelopingAspectsinEarthquakeForecastingandPredictionStudy……'''……''''''………?……??………??'WuZhongliangJiangChangsheng(103)Y anshan,Gaoshan--TwoActiveV olcanosoftheV olcanicClusterinArshan.InnerMongolia……'''…'…'''''……'''…''''………''……'…' BaiZhidaTianMingzhongWuFadongXuDebingLiTuanjie(113)TheJianshanV olcanoinKeshanCounty…''…'…'…''ChenHongzhouY angSenlinGaoFengTaoRupengPanYulin(118) ASummaryofGlobalDisastrousEarthquakeDamagedConditionin2004………?…………?'LiWeipingZhaoRongguo(123)AReviewofSeismicityin2004…'…''…'''…?……'''''…?……??…?…??…………LiGangLiuJieYuSurong130)No.2 TheHoloceneActiveFaultintheWesternPartofBohaiGulfShowedbyAcousticSounding ……………………'''…'……'''………'''……'''…~ZhaoGenmoZhaoGuominYangGangshengWangDahong(139) EstimatingtheLocationAccuracyoftheChinaNationalSeismographNetworkUsingRepea tingEvents…'……''…………………………………'''…'…''…………………………''JiangChangshengWuZhongliang(147) DiscussiononPrimaryApplicationoftheCrustalDeformationDatainSeismicZonation…?………??ZhouBengangZhouQing(155) GravityDynamicImageoftheNortheasternEdgeofQinghai—Xizang(Tibet)PeateaubyUsingBi?cubicSplineInterpolationFunction ……………………'………'''…'……'…'………'''''…''…'…'…' ZhuYiqingHuBinLiHuiJangFengyun(165) TheTieluziFaultInteriorEastern—Qi~ingMountains--AnActiveStrike—slipFault…………'………………''………………'''………'''…'…………''…Y angXiaopingDengQidongFengXijie(172) LaterallyFaultedGulliesandTheirSignificanceintheJianshui—MengziRegion.YunnanProvince ………'…'…''……'''…………'…'…''''''………'…' MaBaoqiLiDewenSuGangHouZhihuaShuSaibing(184) AResearchofRockExperimentonHydraulicFracturingandInducedEarthquake'…'……'''………'''………………''…………Y anYudingLiYalinZhangZhuanOuyangLishengXieMingfu(193) Hilbert—HuangTransformandTime—FrequencyAnalysisofSeismicSignal'…'''…………''…'''……''''''………'''''''''……WuAnxuWuPeizhiLanCongxinXuPingLinXiangdong(207) InitialResearchofActiveBehaviorofCrustintheFunan—HuoqiuRegion,SouthernBorderoftheNorthChinaActiveBlockArea…'''……'''………'…''……………………'………''………'…''………………………Y aoDaquanLiuJiacan(216)SomeProblemsonStrongEarthquakewithM8.0in1303,Shanxi,China'………?…?…………?…………??QiShuqin(224) DistributionCharacteristicsandInfluencingFactorsAnalysisofSeismicLoessLandslides?…''…'………………………………………………………ChenY ongmingShiYuchengLiuHongmeiLuYuxia(235)4期《中国地震》第2l卷(2005年)总目录539 AnalysisOilSequenceCharacteristicsoftheZhaosuEarthquakewithMs6.1onDec.1,2003,i nXinjiang'…………?……………………………………………………………………………………Y angXinNieXiaohongXiaAiguo(244) ResearchonAnnualVariationReasonoftheSacksV olumetricStrain……………?……………??……………ZhangLingkong(254) StudyontheSpatialEvolutionofEarth—ResistivityAnomalyandItsShort—termPrecursorSymbolMarkofStrongShock…'''………………………………………………………………………ZhengWenjunTianShanShaoY ongxin(260)StudyontheShort-impendingAnomalousEvolutionaryCharacteristicsofGroundwaterLe velandTheirRelationshipwithEarthquake…………………''''…………'''……………''…………………LuMingyongNiuAnfChenBingPengLiguo(269)Re—analysisofHistoricalEarthquakeRecordsandStrongEarthquakeCatalogoftheYunnanAre a ………………………………………………………………………'…………………一DengRuishengWangBin(280) ToAnalyzeFounctionofFluidinSeismogenicProcessBasedontheNo.4WellHydrationAno malyV ariationinHuailai,Hebei …………………………………………………………'一SongXiaobingZhangChanghuiSongGuanyiWangJiyi(285) StudyontheDataQualityofBoreholeStrainObservationintheChangpingStation……………………………………………………………WangY ongY angXuanhuiLiuFushengZhangGuohong(291)No.3Researchonthe1879SouthernWuduM80EarthquakeandItsCo—seismicRuptures…………………………………………………HouKangmingLeiZhongshenWanFulingLiLimeiXiongZhen(295) CharacteristicsofSeismicActivitybeforetheDevastatingEarthquakewithMw9.0offtheW estCoastofNorthernSumatraXueY ahSongZhipingMeiShimng(311) CharacteristicsofFocalMechanismintheGuangdongandItsAdjacentAreas ..... ………………………………………………………KangYingYangXuanLtiJinshuiChenXingChenGuimei(320)Space.timeDistributionCharacteristicsonEnergyFieldofEarthquakeintheYunnanRegion ………LuoGuofuYangMingzhi(332) NumericalSimulationonAnnualChangePatternsofPresent.dayTectonicStress.s~ainField ontheChineseMainland………………………………………………………ChenLianwangY angShuxinXieFurenLuYuanzhongGuoRuomei(341) DiscussiononDeepTectonicBackgroundsofModerate—strongEarthquakeinAnhuiandItsNeighboringRegionbyUsingResultsof SeismicTomography…………………………………………ZhangJieShenXiaoqiWangXingzhouShenY elong(350) CharacteristicsoftheHoloceneV olcanointheJingpohuRegion…………………ChenHongzhouMaBaojunGaoFeng(360)ResearchonLoessMicro—structureintheMystoseismicArea………………………………"LanWangLanminLiuXu(369) StudyonStatisticalFeaturesaboutWeakEarthquakeActivitybeforeModerate—strongEarthquakesOccurredinMiddleNorthern PartoftheQinghai—TibetBlock………………MaHeqingShengJu~ngZhaoWeimingRenXuemeiJinchunhua(378) AccurateLocationontheY ao'anEarthquakeSequenceandtheY ongshengEarthquakeSeque nce…………………………………………………………………WangXinlingLiuJieZhangGuominZhaoCuiping(386) DamageTensorAnalysisOilRegionalSeismicStatus……?…?…?…………………………?一ZhongJimaoChengWanzheng(398) ThePrimaryComponentAnalysisMethodandItsApplicationinEarthquakePrediction . ………………………………………………WangWeiLinMingzhouMaQinzhongWuGengfengWuShaechun(4O9) IantificationalAnalysistotheCharacteristicsofSeismicityandQuiescence………………………………………………………………………………………………………………HuangJianpingMaLiChenShijunG.A.Papadopoulos(417) ExperimentalResearchontheInterferenceofElectricFieldandMagneticField .....………………………………………ZhangJihongLiBoHartHaihuaLiRunxianTongRuiqingZhaoHuipeng(429) EarthquakeTsunamiRecordinChineseAncientBooks…………………………WangFengLiuChangsenZhangZhenquan(437)540中国地震2l卷Studv.nP0s【_EarthquakeTransportati.nofUrbanAggl.merati."RpidA.m."s0mePr0blems0fseismicityResearchandItsApplicati.ninEarthquakePrediti."NO.4HePingLiZhiqiang(444)…………WangJian(451)Method0l0gY0fBeliefMeasureApplyingt0EarthquakePredicti0n………………………………………………………………………………………….ShiY aliuZhangXiaodongJinShengzhenZh0uMingd0u(457)Research.ntheDividi"gMethodforPresentReonalActiV eBlock…………………………………………一….………......…...………...…….……..….…ZhanXia.liangJiangZaisenChenBingWangQiZhangXi(463)lnvestt.n.nSiteofthe2003SouthemBomiMs5.7Earthquake,Tibet………………………………………………………………………………………HeYulinCa.ZhongquanChenLichunChenY aming(469)Studv.nNon-elastyAttenuati.nandSou3reeParameters.ftheShidianSwarmi"200l………………………………'…一………………………………………………………一LiuLifangLiuJieSuY oginFuHong(5)statisticsmdv0fLURRAn.malyrremp.ralscalebeforeModeratelyStrongEarthquakesonth eChi"..Minland………'…一...……..….………….………………..............….………………一ZhangHuihuiYinXiangchuLiangNaigang(486) APrebnaryStudyonSeismiCActivityandStages.fSeismicEnergyAccumu1ati"ginSeism. genicTectonicAreas0fTiansban ………………….….…LiYingzhenShenJunWangHaitao(496) ExperimentSludvandInterpretati.nonRelatnbetweenModulus.fRocksandStrainAplil"d ……………………'………………一……………………………………………一Ba.XueyangShiXingiuewenDanLiChengbo(508)R/SAnalvsisandItsApplicalioninStudyonSeismomagneticEffect…………………………………一………………………………………………………………"Yang_ra.LiuQingshenguXijingCa.Guodong(519)AsimoleMode10fRepoSedCasualtiesDungEarthquakesandEarthquake-neratedTsunas …Liuzhu.wuzh."sliang(526)TheCounte丌ne8sures【0【heInfluenceofDirectCurtenlTransittingtoGe.magneticObsti."………………………………GeneralContens,V o1.21(2005)…………………..shenH【'n曲uiZhangXiuxiaFengZhishengSunChunxian(530) ..……………………….…………...….….…………………(536)。

俄罗斯电子元器件查找大全(2)

俄罗斯电子元器件查找大全(2)

ОперационныеусилителиТехническиехарактеристикиТипUCC ICCUOMAXAUUIOIIОКCMRSVOMtripTambO CКорпусНомерТУизделияV mA V mV nA dB V/µsµsСерия 153153УД101±156±1020к5250650,062,5-60 ÷ +1253101.8-1(TO 99)бКО.347.010ТУ1К153УД101А±156±1020к7.550065---45÷ +853101.8-1(TO 99)бКО.348.030ТУ153УД201,A±153±1150к520070---60÷ +1253101.8-1(TO 99)бКО.347.010ТУ1Р153УД2А±153±1150к520070---60÷ +1002101.8-1бКО.347.010ТУ1(8-pin plastic DIP)К153УД201±156±1020к7.5500----45÷ +853101.8-1(TO 99)бКО.348.030ТУ153УД301±15 3.6±1025к25080-1,5-60÷ +1253101.8-1(TO 99)бКО.347.010ТУ1153УД501А±15 3.5±101000к120110---60÷ +1253101.8-1(TO 99)бКО.347.010ТУ4153УД501Б±15 3.5±101000к120100---60÷ +1253101.8-1(TO 99)бКО.347.010ТУ4К153УД501±15 5.0±10400к 2.53094---10÷ +703101.8-1(TO 99)бКО.348.030ТУ153УД601±153±1050к21080---60÷ +1253101.8-1(TO 99)бКО.347.010ТУ2К153УД601±153±1050к21080---45÷ +853101.8-1(TO 99)бКО.348.030ТУН153УД6±153±1050к21080---60÷ +125Н04.16-2ВбКО.347.010ТУ2(16-pin QFP)СерияК553К553УД1А±156±1020к7.550065---45÷ +85201.14-1(TO 116)бКО.348.260-01ТУК553УД1B±15 3.6±1025к25080---45÷ +85201.14-1(TO 116)бКО.348.260-01ТУК553УД101А±156±1020к7.550065---45÷ +852101.8-1бКО.348.260-01ТУ(8-pin plastic DIP)К553УД101B ±15 3.6±1025к25080---45÷ +852101.8-1бКО.348.260-01ТУ(8-pin plastic DIP)К553УД2±156±1020к7.5500----45÷ +85201.14-1(TO 116)бКО.348.260-02ТУК553УД201±156±1020к7.5500----45÷ +852101.8-1бКО.348.260-02ТУ(8-pin plastic DIP)К553УД6±153±1050к21080---45÷ +85201.14-1(TO 116)бКО.348.260-03ТУК553УД601±153±1050к21080---45÷ +852101.8-1бКО.348.260-03ТУ(8-pin plastic DIP)Серия 140140УД601А±152,8±1270к±5±10802,5--60÷ +1253101.8-1(TO 99)АЕЯР.431130.187-04ТУ140УД601Б±152,8±1250к±8±15702,0--60÷ +1253101.8-1(TO 99)АЕЯР.431130.187-04ТУК140УД6±154,0±1130к±102570---10÷ +70311.8-2(TO 99)бКО.348.285ТУ140УД1201±15 0,025±12100к ±5±3700,01--60÷ +1253101.8-1(TO 99)АЕЯР.431130.187-10ТУК140УД1201±15 0,03±1050к±66700,01--60÷ +853101.8-1(TO 99)бКО.348.095-06ТУКР140УД1208±15 0,03±10100к ±66700,01--10÷+ 702101.8-1бКО.348.095-06ТУ(8-pin plastic DIP)КБ140УД12-1М±16,5 0,03±13100к ±5±370---50÷85б/к (Chip, Au-pin)СКЕН.43106.812ТУ140УД1701А±154,0±12300к±0,025±21100,1--60÷ +1253101.8-1(ТО 99)АЕЯР.431130.187-17ТУ140УД1701Б±154,0±12200к±0,075±2,81100,1--60÷ +1253101.8-1(ТО 99)АЕЯР.431130.187-17ТУ140УД20А±152,8±11,550к±5,050700,3--60÷ +125201.14-10АЕЯР.431130.187-14ТУ(14-pin CerDIP)140УД20Б±152,8±11,550к±5,050700,3--60÷ +125201.14-10АЕЯР.431130.187-14ТУ(14-pin CerDIP)СерияК1463 (впроцессеосвоения)1463УД1±150,02±13,5100к0,455900,05--60÷+1252101.8-1АЕЯР.431130.308ТУ(8-pin plastic DIP)К1463УД1±150,02±13,5100к0,455900,05--40÷+852101.8-1АДБК.431130.870ТУ(8-pin plastic DIP)К1463УД2±150,03±14,1200к0,154970,015--40÷+852101.8-1АДБК.431130.871ТУ(8-pin plastic DIP)- 1 -ТипUCC ICCUOMAXAUUIOIIОКCMRSVOMtripTambO CКорпусНомерТУизделияV mA V mV nA dB V/µsµs1463УД3±156,8±1250к1500100230--60÷+1252101.8-1АЕЯР.431130.309ТУ(8-pin plastic DIP)К1463УД3±156,8±1250к1500100230--40÷+852101.8-1АДБК.431130.872ТУ(8-pin plastic DIP)1463УБ1±151,3±13,6 1÷1k 0,125173÷110---60÷+1252101.8-1АЕЯР.431130.307ТУ(8-pin plastic DIP)К1463УБ1±151,3±13,6 1÷1k 0,125173÷110---40÷+852101.8-1АДБК.431130.873ТУ(8-pin plastic DIP)AS301АN±153±1025к7.55070--0÷+ 702101.8-1ЩТ3.423.010-05ТУ(8-pin plastic DIP)КР1401УД2+32 3.0+2625k7.05066--0÷ +70201.14-1(TO 116)бКО.348.651ТУ/02счетверенныйAS324N+32 3.0+2625k7.05066--0÷ +70201.14-1(TO 116)СКЕН.431136.808ТУсчетверенныйAS2902N+32 3.0+2625k7.05066---45÷ +85201.14-1(TO 116)СКЕН.431136.808ТУсчетверенныйК1040УД1+32 2.0+2625k7.05066--0÷ +702101.8-1бКО.349.078ТУсдвоенный(8-pin plastic DIP)AS358N+32 2.0+2625k7.05066--0÷ +702101.8-1ЩТ3.423.010-03ТУсдвоенный(8-pin plastic DIP)AS258N+32 2.0+2625k7.05066---45÷ +852101.8-1ЩТ3.423.010-03ТУсдвоенный(8-pin plastic DIP)Серия 740140УД6АН1АР±152,8±1270к±5±10802,5--60÷ +100б/к (Chip, Au-pin)АЕЯР.431130.216ТУ(740УД4-1 стар. обоз.)140УД6БН1АР±152,8±1250к±8±15802,0--60÷ +100б/к (Chip, Au-pin)АЕЯР.431130.216ТУ(740УД4-1 стар. обоз.)- 2 -Компараторынапряжения.ТипUcc1Ucc2UCC3ICC1ICC2ICC3UIOIIОtDLHTambO CКорпусНомерТУизделияV V V mA mA mA mV nA ncСерия 521521СА10112-6-11.5 6.5- 3.510к110-60÷ +1253107.12-1 (TO 100)бКО.347.015 ТУ1сдвоенныйК521СА10112-6-11.5 6.5-7.510к120-45÷ +853107.12-1 (TO 100)бКО.348.279-01 ТУсдвоенный521СА20112-6-98-510к120-60÷ +1253101.8-1 (TO 99)бКО.347.015 ТУ1Б521СА2-212-6-98-510к120-60÷ +100б/кбКО.347.454-01ТУ(Chip, Polyim. film)К521СА20112-6-98-7.510к120-45÷ +853101.8-1 (TO 99)бКО.348.279-01 ТУ 521СА30115-15-65-310300-60÷ +1253101.8-1 (TO 99)бКО.347.015 ТУ2Б521СА3-115-15-65-310300-60÷ +100б/к (Chip, Au-pin)бКО.347.115ТУ2Б521СА3-215-15-65-310300-60÷ +100б/кбКО.347.454-02ТУ(Chip, Polyim. film)Н521СА315-15-65-310300-60÷ +125Н04.16-2ВбКО.347.015 ТУ2(16-pin QFP)К521СА301А15-15-65-310300-45÷ +853101.8-1 (TO 99)бКО.348.279-02 ТУК521СА301Б15-15-7,55-7.550300-45÷ +853101.8-1 (TO 99)бКО.348.279-02 ТУ521СА4019.0-9.0 5.0 3.757.51640.5к26-60÷ +1253107.12-1 (TO 100)бКО.347.015 ТУ3Б521СА4-19.0-9.0 5.0 3.757.51640.5к26-60÷ +100б/к (Chip, Au-pin)бКО.347.115-03ТУК521СА4019.0-9.0 5.0 4.08.51850.75к26-45÷ +853107.12-1 (TO 100)бКО.348.279-03 ТУК521СА60112-12 5.012.55-40.2к150-10÷ +703107.12-1НБбКО.348.279-04 ТУсдвоенный(TO 100)СерияР(К)554К554СА20112-6-98-7.510к120-45÷ +852101.8-1бКО.348.279-01 ТУ(8-pin plastic DIP)К554СА301А15-15-65-310300-45÷ +852101.8-1бКО.348.279-02 ТУ(8-pin plastic DIP)AS211N15-15-65-310300-25÷ +852101.8-1ЩТ3.423.010-06 ТУ(8-pin plastic DIP)К554СА301Б15-15-65-7.510300-45÷ +852101.8-1бКО.348.279-02ТУ(8-pin plastic DIP)AS311N15-15-7.55-7.5503000÷ +702101.8-1ЩТ3.423.010-06 ТУ(8-pin plastic DIP)Р554СА212-6-98-510к120-60÷ +1002101.8-1бКО.347.473-01 ТУ(8-pin plastic DIP)Р554СА3А15-15-65-310300-60÷ +1002101.8-1бКО.347.473-02 ТУ(8-pin plastic DIP)К554СА112-6-11.5 6.5-7.510к120-45÷ +85201.14-1(TO 116)бКО.348.279-01 ТУсдвоенныйК554СА2126-98-7.510к120-45÷ +85201.14-1(TO 116)бКО.348.279-01 ТУК554СА3А1515-65-310300-45÷ +85201.14-1(TO 116)бКО.348.279-02 ТУК554СА3Б1515-7,55-7.510300-45÷ +85201.14-1(TO 116)бКО.348.279-02 ТУК554СА49.09.0 5.0 4.08.51850.75к26-45÷ +85201.14-1(TO 116)бКО.348.279-03ТAS339N1818- 2.5-- 5.0503000÷ +70201.14-1(TO 116)СКЕН 431136.808-01ТУсчетверенныйКР1401СА1Б1818- 2.5-- 5.0503000÷ +70201.14-1(TO 116)И63.487.024-18ТУКР1040СА11818- 2.5-- 5.0503000÷ +702101.8-1бКО.349.080ТУсдвоенный(8-pin plastic DIP)AS393N1818- 2.5-- 5.0503000÷ +702101.8-1ЩТ3.423.010-04ТУсдвоенный(8-pin plastic DIP)AS3V3933--0,02--50,325000÷ +702101.8-1ЩТ3.423.010-07ТУ(8-pin plastic DIP)597СА3АТАР151552,61-5350300-60÷ +100402.16-33АЕЯР431350.353ТУсдвоенный597СА3БТАР151552,61-5350370-60÷ +100402.16-33АЕЯР431350.353ТУсдвоенный597СА3АУАР151552,61-5350300-60÷ +100H04.18-2BАЕЯР431350.353ТУсдвоенный597СА3БУАР151552,61-5350370-60÷ +100H04.18-2BАЕЯР431350.353ТУсдвоенныйЦифро-аналоговыепреобразователи.ТипRes tS DNL INLδFS Ucc Icc UREFIoutInputs TambO CКорпусНомерТУизделияbitsµs%%% from FS V mA V mA ViL /VihСерия 572572ПА1А1050,10,1-3÷0,5152±10.24-0.8/3.6-60÷+85201.16-8бКО. 347.182ТУ1(16-pin CerDIP)572ПА1Б1050,20,2-3÷0,5152± 10.24-0.8/3.6-60÷+85201.16-8бКО. 347.182ТУ1(16-pin CerDIP)572ПА1В1050,40,4-3÷0,5152± 10.24-0.8/3.6-60÷+85201.16-8бКО. 347.182ТУ1(16-pin CerDIP)Р572ПА1А1050,10,1-3÷0,5152± 10.24-0.8/3.6-60÷+85238.16-1бКО. 347.182ТУ1(16-pin PlasticDIP)Р572ПА1Б1050,20,2-3÷0,5152± 10.24-0.8/3.6-60÷+85238.16-1бКО. 347.182ТУ1(16-pin PlasticDIP)Р572ПА1В1050,40,4-3÷0,5152± 10.24-0.8/3.6-60÷+85238.16-1бКО. 347.182ТУ1(16-pin PlasticDIP)Н572ПА1A1050,10,1-3÷0,5152±10.24-0.8/3.6-60÷+85Н04.16-1ВбКО. 347.182ТУ1(16-pin QFP)Н572ПА1Б1050,20,2-3÷0,5152±10.24-0.8/3.6-60÷+85Н04.16-1ВбКО. 347.182ТУ1(16-pin QFP)Н572ПА1В1050,40,4-3÷0,5152±10.24-0.8/3.6-60÷+85Н04.16-1ВбКО. 347.182ТУ1(16-pin QFP)Б572ПА1-11050,10,13152± 10.24-0.8/3.6-60÷+85б/кРАЕ-012.ПА1(Chip, Au-pin)К572ПА1А1050,10,13152±10.24-0.8/3.6-10÷+70201.16-8бКО.348.432-01ТУ(16-pin CerDIP)К572ПА1Б1050,20,23152± 10.24-0.8/3.6-10÷+70201.16-8бКО.348.432-01ТУ(16-pin CerDIP)КР572ПА1А1050,10,13152± 10.24-0.8/3.6-10÷+70238.16-1бКО.348.432-01ТУ(16-pin PlasticDIP)КР572ПА1Б1050,20,23152± 10.24-0.8/3.6-10÷+70238.16-1бКО.348.432-01ТУ(16-pin PlasticDIP)AS7533LN100.6±0,05±0,051.4172±25-0.8/2.4-40÷+85238.16-1ЩТ3.430.000-02ТУ(16-pin PlasticDIP)AS7533KN100.6±0,1±0,11.4172±25-0.8/2.4-40÷+85238.16-1ЩТ3.430.000-02ТУ(16-pin PlasticDIP)572ПА2А12100,10,10.15/151.510.24-TTL-60÷+854134.48-2бКО.347.182ТУ2(48-pin Cer Flatpack)572ПА2 Б12100,20,20.35/151.510.24-TTL-60÷+854134.48-2бКО.347.182ТУ2(48-pin Cer Flatpack)К572ПА2А1215±0,025±0,0250.55/15 2.010.24-TTL-10÷+704134.48-2бКО. 348.432-02ТУ(48-pin Cer Flatpack)К572ПА2Б1215±0,05±0,050.55/15 2.010.24-TTL-10÷+704134.48-2бКО. 348.432-02ТУ(48-pin Cer Flatpack)К572ПА2B1215±0,1±0,10.55/15 2.010.24-TTL-10÷+704134.48-2бКО. 348.432-02ТУ(48-pin Cer Flatpack)КР572ПА2А1215±0,025±0,0250.55/15 2.010.24-TTL-10÷+702123.40-2бКО. 348.432-02ТУ(40-pin Plastic DIP)КР572ПА2Б1215±0,05±0,050.55/15 2.010.24-TTL-10÷+702123.40-2бКО. 348.432-02ТУ(40-pin Plastic DIP)КР572ПА2B1215±0,1±0,10.55/15 2.010.24-TTL-10÷+702123.40-2бКО. 348.432-02ТУ(40-pin Plastic DIP)Серия11081108ПА1А120.4±0,018±0,0180.245/-1515/4810.243-7TTL-60÷+85210Б.24-1бКО.347.347-01ТУ(24-pin CerDIP)1108ПА1Б120.4±0,048±0,0480.55/-1515/4810.243-7TTL-60÷+85210Б.24-1бКО.347.347-01ТУ(24-pin CerDIP)К1108ПА1А120.4±0,024±0,0240.35/-1515/4610.243-7TTL-10÷+70210Б.24-1бКО.348.645-ТУ(24-pin CerDIP)К1108ПА1Б120.7±0,024±0,0240.35/-1515/4610.243-7TTL-10÷+70210Б.24-1бКО.348.645-ТУ(24-pin CerDIP)Н1108ПА1А120.4±0,018±0,0180.245/-1515/4810.243-7TTL-60÷+85Н14.42-2ВбКО.347.347-01ТУ(42-pin QFP)Н1108ПА1Б120.4±0,048±0,0480.245/-1515/4810.243-7TTL-60÷+85Н14.42-2ВбКО.347.347-01ТУ(42-pin QFP)Н1108ПА281.0±0,2±0,21.55/-640/50int 2.5TTL-45÷+85238.18-1бКО.347.347-04ТУ(18-pin CerDIP )Радар-Т120.12±0,018±0,0180.245/-1515/4810.243-7TTL-60÷+85210Б.24-1ОКРвстадии(24-pin CerDIP)разработкиАналого-цифровыепреобразователи.ТипRes tСDNL INLδFS UCCICCUREFUINTambO CКорпусНомерТУизделияbitsµs±LSB±LSB±LSB V mA V VСерия 572572ПВ1А1215010.75105/+151.0/1.5± 10.2410-60÷+854134.48-2бКО.347.182-03ТУ(48-pin CerFlatpack)572ПВ1Б1215042405/+151.0/1.5± 10.2410-60÷+854134.48-2бКО.347.182-03ТУ(48-pin CerFlatpack)К572ПВ1А12150421225/+153/5± 10.2410-10÷+704134.48-2бКО.348.432-03ТУ(48-pin CerFlatpack)К572ПВ1Б12150841225/+153/5± 10.2410-10÷+704134.48-2бКО.348.432-03ТУ(48-pin CerFlatpack)К572ПВ1В1215011105/+153/5± 10.2410-10÷+704134.48-2бКО.348.432-03ТУ(48-pin CerFlatpack)КР572ПВ1А12150421225/+153/5± 10.2410-10÷+702123.40-2бКО.348.432-03ТУ(40-pin Plastic DIP)КР572ПВ1Б12150841225/+153/5± 10.2410-10÷+702123.40-2бКО.348.432-03ТУ(40-pin Plastic DIP)КР572ПВ1В1215011105/+153/5± 10.2410-10÷+702123.40-2бКО.348.432-03ТУ(40-pin Plastic DIP)КР572ПВ2А 3.5dec.-11-5/-51.81.02-10÷+702123.40-2бКО.348.432-04ТУ(40-pin Plastic DIP)КР572ПВ2Б 3.5dec.-33-5/-51.81.02-10÷+702123.40-2бКО.348.432-04ТУ(40-pin Plastic DIP)КР572ПВ2В 3.5dec.-55-5/-51.81.02-10÷+702123.40-2бКО.348.432-04ТУ(40-pin Plastic DIP)Н572ПВ387.50.750.535 2.5-1010-60÷+125H09.18-1BбКО.347.182-05ТУ(18-pin QFP)КР572ПВ387.50,750.535 2.5-1010-10÷+70238.18-3бКО.348.432-08ТУ(18-pin Plastic DIP)К572ПВ48250.50.515 3.0±2.5±2.5-25÷+852121.28-6бКО.348.432-05ТУ(24-pin CerDIP)КР572ПВ5 3.5dec.-11191.81.0±1,9-10÷+702123.40-2бКО.348.412-07ТУ(40-pin Plastic DIP)Серия11081108ПВ1А100.90.75145/-5.250/130 2.5/in. 2.8-45÷+85210.Б.24-1бКО.347.347-02ТУ(24-pin CerDIP)1108ПВ1Б100.93375/-5.250/130 2.5/in. 2.8-45÷+85210.Б.24-1бКО.347.347-02ТУ(24-pin CerDIP)1108ПВ1Г100.90.75145/-5.250/130 2.5/in. 2.8-25÷+70210.Б.24-1бКО.347.347-02ТУ(24-pin CerDIP)К1108ПВ1А100.90.75145/-5.250/130 2.5/in. 2.8-10÷+70210.Б.24-1бКО.348.863-ТУ(24-pin CerDIP)К1108ПВ1Б100.93375/-5.250/130 2.5/in. 2.8-10÷+70210.Б.24-1бКО.348.863-ТУ(24-pin CerDIP)Н1108ПВ1А100.90.75145/-5.250/130 2.5/in. 2.8-45÷+85H14.42-1BбКО.347.347-02ТУ(42-pin QFP)Н1108ПВ1Б100.93375/-5.250/130 2.5/in. 2.8-45÷+85H14.42-1BбКО.347.347-02ТУ(42-pin QFP)Н1108ПВ1Г100.90.75145/-5.250/130 2.5/in. 2.8-25÷+70H14.42-1BбКО.347.347-02ТУ(42-pin QFP)1108ПВ212 2.01.0 2.0105/-680/150 2.5/in.5/±2.5-45÷+852123.40-6бКО.347.347-05ТУ(40-pin CerDIP)К1108ПВ212 2.01.0 2.0105/-680/150 2.5/in.5/±2.5-10÷+702123.40-6бКО.348.863-ТУ(40-pin CerDIP)Серия11131113ПВ1А10301155/-1510/18int.10/±5-45÷+85238.18-1бКО.347.365-01ТУ(18-pin CerDIP)1113ПВ1Б103042105/-1510/18int.10/±5-45÷+85238.18-1бКО.347.365-01ТУ(18-pin CerDIP)1113ПВ1В103042105/-1510/18int.10/±5-60÷+125238.18-1бКО.347.365-01ТУ(18-pin CerDIP)1113ПВ1Г10301155/-1510/18int.10/±5-45÷+85238.18-1бКО.347.365-01ТУ(18-pin CerDIP)К1113ПВ1А10301145/-1510/18int.10/±5-10÷+70238.18-1бКО.348.636-ТУ(18-pin CerDIP)К1113ПВ1Б10302245/-1510/18int.10/±5-10÷+70238.18-1бКО.348.636-ТУ(18-pin CerDIP)К1113ПВ1В10304445/-1510/18int.10/±5-10÷+70238.18-1бКО.348.636-ТУ(18-pin CerDIP)К1113ПВ1Г10304445/-1510/18int.10/±5-10÷+70238.18-1бКО.348.636-ТУПреобразователинапряжение-частота, частота-напряжение.ТипUio Iio1Iio2δLUFδLFUδFS UCC ICCTambO CКорпусНомерТУизделияmV nA nA x 10-6x 10-6% from FS V mAКР1108ПП1±4±150±60100100±1015/-156/6-10÷+70201.14-1(ТО116)бКО.348.758ТУКР1108ПП1±4±150±60100100±1015/-156/6-10÷+70201.14-1(ТО116)бКО.348.758ТУ1108ПП1±4±150±60100100±1015/-156/6-60÷+85201.14-10бКО.347.347-03ТУ(14-pin CerDIP)Р1108ПП1±4±150±60100100±1015/-156/6-60÷+85201.14-1(ТО116)бКО.347.347-03ТУК1108ПП1±4±150±60100100±1015/-156/6-10÷+70201.14-10бКО.348.758ТУТаймерыТипUCC IOICCδTambO CКорпусНомерТУизделияV mA mA/15V%Серия1006Р1006ВИ15-15100122-60÷+100201.14-1(TO 116)бКО.347.395-01ТУМ1006ВИ15-15100122-60÷+125201.14-10бКО.347.395-01ТУ(14-pin CerDIP)КР1006ВИ15-15100153-45÷+ 702101.8-1бКО.348.685 ТУAS555CN4,5-16,51001530÷+702101.8-1ТУЛР 000308466-10-93(8-pin plastic DIP)AS556CN4,5-16,51002830÷+70201.14-1(TO 116)СКЕН431136.808-02ТУсдвоенныйAS7555IPA2-181000.255-20÷+852101.8-1ЩТ3.423.010 ТУ(8-pin plastic DIP)КР1441ВИ12-181000.253-20÷+852101.8-1АДБК.431280.421ТУ(8-pin plastic DIP)Регуляторы напряженияТипТехническая характеристикаT amb O CКорпусНомер ТУизделияAS78LXXCP3-Terminal Positive Regulators V O (5,6,8,9,12,15)V;0÷+70КТ 26(ТО 92)СКЕН.431422.800 ТУV IN MAX 35V; δV O ±10%; I OMAX =100mAКР1157ЕНXX01Б3-Terminal Positive Regulators V O (5,6,8,9,12,15)V;0÷+70КТ 26(ТО 92)АДБК.431420.049ТУV IN MAX 35V; δV O ±10%; I OMAX =100mAAS78LXXAC Р3-Terminal Positive Regulators V O (5,6,8,9,12,15)V;0÷+70КТ 26(ТО 92)СКЕН.431422.800 ТУV IN MAX 35V; δV O ±5%; I OMAX =100mAКР1157ЕНXX01А3-Terminal Positive Regulators V O (5,6,8,9,12,15)V;0÷+70КТ 26(ТО 92)АДБК.431420.049ТУV IN MAX 35V; δV O ±5%; I OMAX =100mAAS79LXXCP 3-Terminal Negative Regulators V O (5,6,8,9,12,15)V;0÷+70КТ 26(ТО 92)СКЕН.431422.801 ТУV IN MAX 35V; δV O ±10%; I OMAX =100mAКР1168ЕНXX Б3-Terminal Negative Regulators V O (5,6,8,9,12,15)V;0÷+70КТ 26(ТО 92)АДБК.431420.198ТУV IN MAX 35V; δV O ±10%; I OMAX =100mAAS79LXXACP 3-Terminal Negative Regulators V O (5,6,8,9,12,15)V;0÷+70КТ 26(ТО 92)СКЕН.431422.801 ТУV IN MAX 35V; δV O ±5%; I OMAX =100mAКР1168ЕНXX А3-Terminal Negative Regulators V O (5,6,8,9,12,15)V;0÷+70КТ 26(ТО 92)АДБК.431420.198ТУV IN MAX 35V; δV O ±5%; I OMAX =100mAAS317L 3-Terminal Adjustable Regulators V O 1,2V ÷ 37,0V; I OMAX =100mA0÷+70КТ 26(ТО 92)СКЕН.431422.802 ТУAS385-2,5Micropower Voltage Reference V O =+ 2,5V ; I OMAX =20mA-10÷+70КТ 26(ТО 92)СКЕН.431422.803 ТУЗаказныеаналого-цифровыемикросхемыТипизделия UCC (V)ICC(mA)TambO CКорпусEuro 1-54,5-5,50,01-40 +85PLCC84(84-pin plastic) AS290-H1,5-16,50,055-65÷+85H04.16-1BASXP193P8-1810-45÷+852101.8-1(8-pin plastic DIP) ASXP194P8-186-45÷+85201.14-1(TO 116) ASXP195P8,50,2-45÷+852101.8-1(8-pin plastic DIP) ASXP642P1618-45÷+852101.8-1(8-pin plastic DIP) LMS 1118,55-45÷+85238.18-1(18-pin plastic DIP) VAC 3308,53-45÷+852101.18-1(18-pin plastic DIP) CT 7073143-45÷+852101.16-1(16-pin plastic DIP) AS194H3520-60 +1253101.8-1(TO-99)LC3608,51,0-45 +852101.8-1(8-pin plastic DIP) MT420 5 - 155-45 +85SOIC 24(24-pin plastic) LCD10418,50,2-45÷+85 SOIC 32Транзисторныепары (p-n-p).ТипFT Pcmax UCEOICh21EUCE satTSF h21ETambO CКорпусНомерТУизделияMHz mW V mA V ns dB½Транзисторныепары (p-n-p)2ТС3103А 600300152040-2000.6--0.9-60÷+1253101.8-1(TO 99)aAO.339.031 TУ2ТС3103Б 600300152040-2000.6--0.8-60÷+1253101.8-1(TO 99)aAO.339.031 TУКТC3103А 600300152040-2000.6--0.9-45÷+853101.8-1(TO 99)aAO.336.221 TУКТC3103Б 600300152040-2000.6--0.8-45÷+853101.8-1(TO 99)aAO.336.221 TУКТC3103А1 600300152040-2000.6--0.9 -45÷+85 2101.8-1aAO.336.221 TУ(8-pin plastic DIP)КТC3103Б1 600300152040-2000.6--0.8-45÷+85 2101.8-1aAO.336.221 TУ(8-pin plastic DIP)2ТС393А-1 50020101040-1800.6--0.9 -60÷+85б/к (Chip, Au-pin)ХМ3.363.000ТУ2ТС393Б-1 50020151030-140 ---0.8 -60÷+85б/к (Chip, Au-pin)ХМ3.363.000ТУКТС393А-1 50020101040-1800.6--0.9-45÷+85б/к (Chip, Au-pin)аА0.336.099ТУКТС393Б-1 50020151030-140---0.8-45÷+85б/к (Chip, Au-pin)аА0.336.099ТУТранзисторы (p-n-p)ТипFT Pcmax UCEOICh21EUCE satTSF h21ETambO CКорпусНомерТУизделияMHz mW V mA V ns dB½2Т363А1000150153020-1200.3510---60÷+125КТ-1-7(ТО 18)ЩТО.336.008ТУ2Т363Б1500150123040-1200.355---60÷+125КТ-1-7(ТО 18)ЩТО.336.008ТУКТ363А1000200153020-1200.3510---45÷+85КТ-1-7(ТО 18)ЩТО.336.014ТУКТ363Б1500200123040-1200.355---45÷+85КТ-1-7(ТО 18)ЩТО.336.014ТУКТ363АМ1000200153020-1200.3510---45÷+85КТ-26(ТО 92)ЩТО.336.014ТУКТ363БМ1500200123040-1200.355---45÷+85КТ-26(ТО 92)ЩТО.336.014ТУКТ326А400200155020-700,30----60÷+125КТ-1-7(ТО 18)аАО.336.196ТУКТ326Б400200155045-1600,30----60÷+125КТ-1-7(ТО 18)аАО.336.196ТУКТ639А80100045150040-1000.5----60÷+125КТ-27-2(ТО 126)аАО.336.267ТУКТ639Б80100045150063-1600.5----60÷+125КТ-27-2(ТО 126)аАО.336.267ТУКТ639В801000451500100-2500.5----60÷+125КТ-27-2(ТО 126)аАО.336.267ТУКТ639Г80100060150040-1000.5----60÷+125КТ-27-2(ТО 126)аАО.336.267ТУКТ639Д80100060150063-1600.5----60÷+125КТ-27-2(ТО 126)аАО.336.267ТУКТ639Е80100080150040-1000.5----60÷+125КТ-27-2(ТО 126)аАО.336.267ТУКТ639 Ж80100080150063-1600.5----60÷+125КТ-27-2(ТО 126)аАО.336.267ТУКТ639И801000301500180-4000.5----60÷+125КТ-27-2(ТО 126)аАО.336.267ТУКТ644А20010006060040-1200.4180---60÷+125КТ-27-2(ТО 126)аАО.336.268ТУКТ644Б200100060600100-3000.4180---60÷+125КТ-27-2(ТО 126)аАО.336.268ТУКТ644В20010004060040-1200.4180---60÷+125КТ-27-2(ТО 126)аАО.336.268ТУКТ644Г200100040600100-3000.4180---60÷+125КТ-27-2(ТО 126)аАО.336.268ТУКТ668А2005004510075-1400.3-10/1kHz--60÷+125КТ-26(TO 92)aAO.336.717 TУКТ668Б20050045100125-2500.3-10/1kHz--60÷+125КТ-26(TO 92)aAO.336.717 TУКТ668В20050045100220-4750.3-10/1kHz--60÷+125КТ-26(TO 92)aAO.336.717 TУКТ684А4080045100040-2500.5---- 45÷+125КТ-26(TO 92)aAO.336.806 TУКТ684Б4080060100040-1600.5---- 45÷+125КТ-26(TO 92)aAO.336.806 TУКТ684В4080080100040-1600.5---- 45÷+125КТ-26(TO 92)aAO.336.806 TУКТ684Г80800 -1500180-4000.5---- 45÷+125КТ-26(TO 92)aAO.336.806 TУКТ685А2006004060040-1200.480---60÷+125КТ-26(TO 92)aAO.336.810 TУКТ685Б2006006060040-1200.480---60÷+125КТ-26(TO 92)aAO.336.810 TУКТ685В20060040600100-3000.480---60÷+125КТ-26(TO 92)aAO.336.810 TУКТ685Г20060060600100-3000.480---60÷+125КТ-26(TO 92)aAO.336.810 TУКТ685Д3506002560070-2000.380---60÷+125КТ-26(TO 92)aAO.336.810 TУКТ685Е2506002560040-1200.3150---60÷+125КТ-26(TO 92)aAO.336.810 TУКТ685Ж25060025600100-3000.3150---60÷+125КТ-26(TO 92)aAO.336.810 TУКТ686А10062545800100-2500.7----60÷+125КТ-26(TO 92)aAO.336.814 TУКТ686Б10062545800160-4000.7----60÷+125КТ-26(TO 92)aAO.336.814 TУКТ686В10062545800250-6300.7----60÷+125КТ-26(TO 92)aAO.336.814 TУКТ686Г10062525800100-2500.7----60÷+125КТ-26(TO 92)aAO.336.814 TУКТ686 Д10062525800160-4000.7----60÷+125КТ-26(TO 92)aAO.336.814 TУКТ686Е10062525800250-6300.7----60÷+125КТ-26(TO 92)aAO.336.814 TУТипFT Pcmax UCEOICh21EUCE satTSF h21ETambO CКорпусНомерТУизделияMHz mW V mA V ns dB½КТ686Ж10062525800100-2500.7----60÷+125КТ-26(TO 92)aAO.336.814 TУКТ3107А2503004510070-1400.2-10/1kHz--60÷+125КТ-26(TO 92)aAO.336.170 TУКТ3107Б25030045100120-2200.2-10/1kHz--60÷+125КТ-26(TO 92)aAO.336.170 TУКТ3107В 2503002510070-1400.2-10/1kHz--60÷+125КТ-26(TO 92)aAO.336.170 TУКТ3107Г 25030025100120-2200.2-10/1kHz--60÷+125КТ-26(TO 92)aAO.336.170 TУКТ3107 Д 25030025100180-4600.2-10/1kHz--60÷+125КТ-26(TO 92)aAO.336.170 TУКТ3107Е 25030020100120-2200.2-4/1kHz--60÷+125КТ-26(TO 92)aAO.336.170 TУКТ3107Ж 25030020100180-4600.2-4/1kHz--60÷+125КТ-26(TO 92)aAO.336.170 TУКТ3107И 25030045100180-4600.2-10/1kHz--60÷+125КТ-26(TO 92)aAO.336.170 TУКТ3107К 25030025100380-8000.2-10/1kHz--60÷+125КТ-26(TO 92)aAO.336.170 TУКТ3107Л 25030020100380-8000.2-4/1kHz--60÷+125КТ-26(TO 92)aAO.336.170 TУ2T3108А 2503006020050-1500.251756/100MHz--60÷+125КТ-1-7(TO 18)aAO.339.026 TУ2T3108Б 2503004520050-1500.251756/100MHz--60÷+125КТ-1-7(TO 18)aAO.339.026 TУ2T3108В 30030045200100-3000.25-6/100MHz--60÷+125КТ-1-7(TO 18)aAO.339.026 TУ 2T3108 А1 2503006020050-1500.251756/100MHz--60÷+125КТ-26(TO 92)aAO.339.026 ТУ2T3108Б1 2503004520050-1500.251756/100MHz--60÷+125КТ-26(TO 92)aAO.339.026 TУ2T3108В1 30030045200100-3000.25-6/100MHz--60÷+125КТ-26(TO 92)aAO.339.026 TУКТ3109А 1100170255020--6/800MHz--45÷+85KT-29(TO 50)aAO.336.220 TУКТ3109A1 1100170255020--6/800MHz--45÷+85KT-29(TO 92)aAO.336.220 TУ2Т360А-1 30010202025-700.35 ----60÷+85б/к (Chip, Au-pin)ЩТ3.365.059ТУ2Т360Б-1 40010152040-1200.35 ----60÷+85б/к (Chip, Au-pin)ЩТ3.365.059ТУ2Т360В-1 40010152080-2400.35----60÷+85б/к (Chip, Au-pin)ЩТ3.365.059ТУ2Т364А-2 250302020020-700.3100---60÷+85б/к (Chip, Au-pin)ЩТ3.365.060ТУ2Т364Б-2 250302020040-1200.3130---60÷+85б/к (Chip, Au-pin)ЩТ3.365.060ТУ2Т364В-2 250302020080-2400.3160---60÷+85б/к (Chip, Au-pin)ЩТ3.365.060ТУКТ364А-2 250302020020-700.3150---45÷+85б/к (Chip, Au-pin)ЩТ0.336.011ТУКТ364Б-2 250302020040-1200.3180---45÷+85б/к (Chip, Au-pin)ЩТ0.336.011ТУКТ364В-2 250302020080-2400.3230---45÷+85б/к (Chip, 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热激预处理诱导秀丽隐杆线虫铜耐受的效应机制研究

热激预处理诱导秀丽隐杆线虫铜耐受的效应机制研究

生态毒理学报Asian Journal of Ecotoxicology第18卷第2期2023年4月V ol.18,No.2Apr.2023㊀㊀基金项目:安徽省自然科学基金资助项目(2108085QC118,KJ2018A0471);安徽省自然科学研究重点项目(KJ2019A0697);淮南师范学院校级科研项目(2022XJYB045)㊀㊀第一作者:何梅(1978 ),女,硕士,研究方向为环境毒理学,E -mail:***************㊀㊀*通信作者(Corresponding author ),E -mail:****************DOI:10.7524/AJE.1673-5897.20220404002何梅,王帅,孔建南,等.热激预处理诱导秀丽隐杆线虫铜耐受的效应机制研究[J].生态毒理学报,2023,18(2):481-489He M,Wang S,Kong J N,et al.Effect and mechanism of heat shock pretreatment on copper tolerance in Caenorhabditis elegans [J].Asian Journal of Ec -otoxicology,2023,18(2):481-489(in Chinese)热激预处理诱导秀丽隐杆线虫铜耐受的效应机制研究何梅1,2,王帅1,孔建南1,游牧1,2,罗勋1,2,*1.淮南师范学院生物工程学院,淮南2320382.资源与环境生物技术安徽普通高校重点实验室,淮南232038收稿日期:2022-04-04㊀㊀录用日期:2022-06-14摘要:探究热激预处理诱导秀丽线虫对铜(Cu)耐受的效应机制,研究了热激预处理对不同浓度硫酸铜(CuSO 4)(25~200mg ㊃L -1)胁迫下的野生型秀丽线虫的致死率㊁体长和子代数量的影响,对线虫肠道的保护作用,以及对转基因品系TJ356(DAF -16::GFP)的DAF -16蛋白转位入核和对转基因品系TJ375(HSP -16.2::GFP)的热休克蛋白HSP -16.2表达的调控作用㊂结果表明,在常规培养条件下,铜胁迫秀丽线虫24h 和48h 的LC 50分别为83.056mg ㊃L -1和10.376mg ㊃L -1;与常规培养结果比较,32.5ħ热激预处理后铜胁迫对线虫子代数量无显著影响;在150mg ㊃L -1Cu 作用下,线虫死亡率下降了45.162%,体长增加了14.520%;同时艾氏氯酸钠染料跨越肠道屏障现象明显减少,而DAF -16转位入核率增加9.822%,HSP -16.2的表达上调579.900%㊂由此可见,热激预处理通过促进DAF -16的转位入核和HSP -16.2的表达增强了线虫的肠道保护能力和对铜的耐受性㊂关键词:铜;秀丽线虫;热激预处理;热休克蛋白;铜耐受性文章编号:1673-5897(2023)2-481-09㊀㊀中图分类号:X171.5㊀㊀文献标识码:AEffect and Mechanism of Heat Shock Pretreatment on Copper Tolerance in Caenorhabditis elegansHe Mei 1,2,Wang Shuai 1,Kong Jiannan 1,You Mu 1,2,Luo Xun 1,2,*1.School of Biological Engineering,Huainan Normal University,Huainan 232038,China2.Key Laboratory of Bioresource and Environmental Biotechnology of Anhui Higher Education Institutes,Huainan 232038,ChinaReceived 4April 2022㊀㊀accepted 14June 2022Abstract :In order to explore the effects and mechanisms of heat shock pretreatment on Caenorhabditis elegans (C.elegans )tolerance to copper (Cu)stress,the mortality,body length and offspring number as well as the protection of intestinal tract of wild -type C.elegans ,the transference of DAF -16protein into nucleus in transgenic strain TJ356(DAF -16::GFP)and the expression of heat shock protein HSP -16.2in transgenic strain TJ375(HSP -16.2::GFP)under different concentrations of Cu (25~200mg ㊃L -1)stress were investigated in present experiment.The results showed that,under normal culture conditions,the LC 50of Cu for 24h and 48h were 83.056mg ㊃L -1and 10.376482㊀生态毒理学报第18卷mg㊃L-1,pared with the results under normal culture condition,the Cu stress following pretreat-ment by32.5ħcaused no significant change in the number of offspring.Especially,under150mg㊃L-1Cu,the death rate of nematodes decreased by45.162%and the body length increased by14.520%.Meanwhile,the cross-ing of intestinal barrier by sodium chlorate was significantly reduced,whereas the ratio of DAF-16translocation in-to nucleus increased by9.822%and the expression of HSP-16.2increased by579.900%.As a result,the heat shock pretreatment enhanced the intestinal protection against Cu stress and Cu tolerance through the promotion of DAF-16translocation into nucleus and the expression of HSP-16.2in the C.elegans.Keywords:copper(Cu);Caenorhabditis elegans(C.elegans);copper tolerance;heat shock pretreatment;heat shock proteins㊀㊀重金属铜具有显著生物毒性[1],难以降解且难溶于水,由于其对生物体的脂肪组织的亲和力较高,能够在生物体组织内富集,并通过食物链逐级传递,因此严重危及生物体的健康[2]㊂铜虽说是动物和植物体内必不可少微量元素[3],但过量的铜会对动植物本身造成严重的毒害作用,也成为了自然环境污染中的污染物之一㊂铜在促进例如呼吸㊁铁转运㊁氧化应激保护㊁肽激素产生㊁色素沉着和血液凝固的蛋白质中充当辅因子[4]㊂为了避免游离铜离子的毒性,细胞内的铜由专门的铜转运蛋白调节,铜转运蛋白辅助金属离子的吸收㊁外排和分布[5]㊂如果允许铜在细胞中参与不受控制的氧化还原反应,它会对蛋白质㊁脂质和DNA造成毁灭性的㊁不可修复的损害[6]㊂温度是一个重要的生态因素,几乎影响到生活的方方面面㊂温度会影响化学品的毒性,且升高的温度会增加生物体对毒物的敏感性[7]㊂此外,极端升高的环境温度会引发多种生理过程的热休克反应[8]㊂而瞬时中等温度治疗通过一种称为激素效应的现象产生有益的效应,例如,研究发现重复热处理可以增加秀丽线虫的寿命和耐热性[9]㊂2006年Singh和Aballay[10]等最早通过热处理激活热休克因子-1(HSF-1)表达增强了秀丽线虫的免疫力㊂秀丽线虫是世界上公认的模式生物之一,因其易人工培养并且观察便利,广泛应用于发育生物学㊁遗传学和细胞生物学等领域的研究,也常在先天免疫㊁环境毒物暴露损伤等机制方面得到了应用[11]㊂利用模式生物秀丽线虫研究重金属毒性,是一种探索毒物毒性的研究手段,2016年孙娜等[12]首次利用Cd㊁Hg和Pb联合暴露探索对秀丽线虫的生殖毒性㊂较于其他模式生物秀丽隐杆线虫个体小,容易观察,生命周期短(从受精卵发育至成虫仅需3d),生殖能力强,可在短时间内获得大量处于同步生长的子代[13],是一种用于研究污染物生殖毒性不可替代的模式生物[14]㊂因此线虫是研究重金属毒性的首选模型,利用体外热刺激,诱导线虫体内的应激抵抗反应,使线虫体内的应激蛋白㊁抗热和耐热蛋白过表达,因而提高线虫自身耐受能力㊂本实验即以线虫致死率LC50㊁生殖腺细胞凋亡实验评价铜耐受对线虫生长的影响,并对热激处理后铜暴露线虫的LC50,体长㊁后代数量进行评价,研究热激预处理引起铜耐受的效应㊂进而通过肠屏障染色㊁DAF-16转位入核及热休克蛋白HSP-16.2的表达等为生物终点,探讨热激处理保护线虫铜耐受的机制,为重金属保护提供科学依据㊂1㊀材料与方法(Materials and methods)1.1㊀线虫和细菌品系线虫品系:野生型(N2)秀丽线虫㊁TJ356(DAF-16::GFP)转基因秀丽线虫㊁TJ375(HSP-16.2::GFP)转基因秀丽线虫,所有线虫品系均来自国际线虫遗传中心(Caenorhabditis Genetics Center,CGC)㊂使用Escherichia coli OP50(E.coli OP50)作为线虫的食物㊂1.2㊀方法1.2.1㊀秀丽线虫的培养以E.coli OP50喂养秀丽线虫[15]㊂E.coli OP50接种于LB液体培养基中,在37.0ħ下振荡培养㊂将培养好的E.coli OP50均匀涂抹在NGM培养基上,37.0ħ培养24h,置于4ħ恒温保存㊂秀丽线虫成虫用K-medium溶液收集,置于5 mL离心管,洗涤2次除去杂质,离心重悬,使最后总体积为2.8mL㊂再加入新配制的裂解液1.2mL (1.34mg㊃L-1NaClO0.8mL,5mg㊃L-1NaOH0.4 mL)混匀,在体视显微镜下观察,待虫体2/3断裂时,以3000r㊃min-1离心1min,去上清液,再用K-medi-um溶液洗涤虫卵2次㊂利用K-medium溶液重悬虫卵,转入3.5cm培养皿,置于20ħ恒温恒湿培养箱内过夜培养,由于缺乏食物,秀丽线虫只孵化不生第2期何梅等:热激预处理诱导秀丽隐杆线虫铜耐受的效应机制研究483㊀长,将全部停留在L1期㊂将已孵化的L1期幼虫以密度500~800条㊃板-1接种于NGM培养基上,即得到同步化生长个体㊂1.2.2㊀铜耐受急性毒性实验利用K-medium溶液将CuSO4㊃5H2O配制成400mg㊃L-1的母液[16],母液稀释为25㊁50㊁100㊁150和200mg㊃L-1,将L4期线虫转入到含不同浓度梯度CuSO4溶液中培养[17],24h和48h后分别在显微镜下观察死亡个数,并进行统计㊂1.2.3㊀生殖腺细胞凋亡的观测与统计将同步化幼虫培养至L4期线虫,分别在不同浓度梯度的CuSO4溶液中暴露24h㊂利用吖啶橙(AO)对CuSO4溶液处理的秀丽线虫染色1h,将染色后的秀丽线虫挑出置于新的NGM中恢复培养40min,挑出秀丽线虫置于载玻片的NaN3液滴中,于荧光显微镜下观察并统计凋亡细胞数量[18]㊂1.2.4㊀不同热激温度和时间下的铜耐受急性毒性实验将早期成虫在20.0㊁30.0㊁32.5㊁35.0ħ下热激1h后恢复培养1h,经不同浓度梯度的CuSO4溶液中暴露培养24h后,观察统计秀丽线虫死亡数㊂将早期成虫在32.5ħ下热激0㊁30㊁60和90min,并恢复1h,经不同浓度梯度的CuSO4溶液中暴露培养24h 后㊂观察统计虫体死亡数㊂1.2.5㊀线虫体长测定将同步化的幼虫培养至L4期线虫,分别在20.0ħ和32.5ħ下预处理1h后恢复1h㊂线虫经不同浓度梯度的CuSO4溶液培养24h,将待测秀丽线虫转移到载玻片上,并用NaN3麻醉,于显微镜下拍照并测量虫体体长[19]㊂1.2.6㊀线虫产卵数测定L4期线虫分别在20.0ħ和32.5ħ预处理1h 后恢复1h㊂将秀丽线虫转移到新的30mm NGM 培养皿中,每个培养皿放置1条线虫,每24h将该成虫转移到新培养皿里,并计后代数目,直至该成虫停止产生后代为止,统计每条虫子后代总数[20]㊂1.2.7㊀肠屏障功能变化观察参考Kissoyan等[21]的研究方法,将早期成虫分别在20.0ħ和32.5ħ下热激1h后恢复1h,经150 mg㊃L-1CuSO4溶液暴露24h,用终浓度为5%的食品染料艾氏氯酸钠溶液染色,并在20ħ下培养3h㊂将秀丽线虫用K-medium溶液洗涤一次,并置于含4%琼脂糖垫上在体视显微镜下观察㊂1.2.8㊀热激处理后线虫在铜胁迫条件下对DAF-16转位入核的测定㊀㊀同步化的TJ356(DAF-16::GFP)秀丽线虫在20.0ħ和32.5ħ热激1h后恢复1h后,经150mg㊃L-1的CuSO4溶液中暴露,24h将成虫转移至载玻片上,NaN3麻醉,封片剂封片,在激光共聚焦显微镜下观察并计数整个身体的DAF-16::GFP细胞质或核定位数㊂计算秀丽线虫DAF-16::GFP核定位的百分比表示DAF-16核转位[22]㊂1.2.9㊀热激处理后线虫在铜胁迫条件下热休克蛋白HSP-16.2的表达测定㊀㊀将同步化后的TJ375(HSP-16.2::GFP)转基因秀丽线虫接种至NGM培养基培养至早期成虫,在20.0ħ和32.5ħ热激1h后恢复1h,并在150 mg㊃L-1的CuSO4溶液中暴露培养24h㊂在配备DP72相机的Olympus SZX16立体显微镜下拍摄荧光照片㊂使用ImageJ测定相对荧光强度㊂1.3㊀数据统计实验数据采用IBM SPSS Statistics25软件进行显著性分析,并用Origin2017绘图,数据采用均数ʃ标准差(x ʃSD)的形式表示,实验结果采用独立样本T检验,P<0.05认为有统计学差异㊂2㊀结果(Results)2.1㊀不同浓度铜胁迫对秀丽线虫急性毒性的影响为探究不同浓度的铜胁迫对秀丽线虫耐受能力的影响,采用急性毒性实验观察线虫的致死率(图1)㊂由图1可知,铜胁迫培养24h后,随着CuSO4浓度的增加,秀丽线虫的死亡率显著上升,相比于24h胁迫培养,低浓度CuSO4处理48h后即可造成线虫死亡,铜胁迫秀丽线虫24h和48h产生的LC50分别为83.056mg㊃L-1和10.376mg㊃L-1,半致死剂量下降87.057%㊂结果提示铜胁迫影响线虫正常寿命,导致线虫死亡,其胁迫时间越长,LC50越低㊂2.2㊀铜胁迫对秀丽线虫生殖腺细胞凋亡的影响为探究不同浓度CuSO4溶液对线虫生殖腺细胞凋亡的影响,对线虫经铜暴露后进行AO染色,图2(a)和2(b)即为荧光显微镜生殖腺细胞凋亡染色观察图,可观察线虫生殖腺细胞凋亡情况,并对凋亡细胞进行计数得铜胁迫秀丽线虫24h产生的生殖腺细胞凋亡个数统计图,如图2(c)所示,随CuSO4浓度升高,铜胁迫组与对照组相比线虫的生殖腺细胞凋亡个数明显增多且呈现剂量依赖效应㊂484㊀生态毒理学报第18卷图1㊀不同浓度铜胁迫对秀丽线虫的致死率Fig.1㊀The fatality rate of C.elegans under differentconcentrations of copper stress2.3㊀不同热激温度和不同热激时间铜胁迫对秀丽线虫致死率的影响㊀㊀为佐证热激处理可影响铜对线虫的胁迫能力,对N2线虫进行热激实验,分别给予不同热激温度和热激时间处理,观察线虫致死率的变化㊂不同热激温度处理下的致死曲线如图3(a )所示,在20.0㊁30.0㊁32.5和35.0ħ4组不同的温度热激处理后铜胁迫条件下秀丽线虫的24h -LC 50分别为10.376㊁11.437㊁15.062和12.886mg ㊃L -1,其温度较20.0ħ秀丽线虫耐受度分别提高了10.226%㊁45.162%和24.190%㊂因此表明在热激温度为32.5ħ处理时,秀丽线虫对铜的耐受性最佳㊂不同热激时间处理下N2线虫的致死曲线如图3(b)所示,在32.5ħ热激温度处理30㊁60和90min 不同热激时间处理后铜胁迫条件下线虫的24h -LC 50分别为10.376㊁图2㊀铜胁迫对秀丽线虫生殖腺细胞凋亡的影响注:(a)对照组;(b)150mg ㊃L -1处理组;(c)不同浓度铜胁迫细胞凋亡;显微镜放大倍数为10ˑ40;**表示P <0.01㊂Fig.2㊀The gonadal cell apoptosis of C.elegans under different concentrations of copper stressNote:(a)Representative image of C.elegans of control group;(b)The representative image of C.elegans under 150mg ㊃L -1copper stress;(c)Gonadal cell apoptosis of C.elegans under different concentrations of copper stress;photomicrographs were taken at 400ˑmagnifications;**represents P<0.01.图3㊀不同热激温度(a )和热激时间(b )对铜胁迫下秀丽线虫致死率的影响注:对照组温度为20ħ㊂Fig.3㊀Effects of heat shock treatments at different temperatures (a)and times (b)on the fatality rate ofC.elegans under different concentrations of copper stressNote:The temperature in control is 20ħ.第2期何梅等:热激预处理诱导秀丽隐杆线虫铜耐受的效应机制研究485㊀11.090㊁15.062和12.438mg㊃L-1,其温度较20.0ħ秀丽线虫耐受性分别提高了6.881%㊁45.162%和19.873%㊂其结果表明最佳的热激时间为60min㊂结果提示热激能有效地提升秀丽线虫对铜的耐受性,其中以32.5ħ热激处理60min最佳㊂2.4㊀热激对铜胁迫的秀丽线虫体长的影响以最佳热激条件进行热激处理,检测不同浓度铜胁迫秀丽线虫24h的体长,结果如图4所示,无铜胁迫下,热激处理秀丽线虫与正常处理秀丽线虫的体长无明显的区别㊂无热激状态对线虫给予不同浓度CuSO4处理,线虫体长较对照组的体长明显偏短,而热激后对线虫给予不同CuSO4处理,体长明显增加,由图4(b)和4(c)可知,在150mg㊃L-1CuSO4溶液暴露后,32.5ħ热激处理的线虫比正常处理的线虫的体长增加14.520%㊂揭示铜胁迫抑制线虫的生长,而热激处理能促进秀丽线虫的生长,从而缓解铜对秀丽线虫生长发育的抑制㊂2.5㊀热激处理对秀丽线虫后代的影响铜胁迫可造成线虫生殖细胞凋亡,为探究热激处理对线虫后代的影响,排除其余干扰因素,以最佳热激条件对线虫进行预处理,再给予CuSO4溶液处理,在体视显微镜下观察统计孵化的后代条数,观察不同温度处理线虫的后代数变化㊂结果显示32.5ħ热激处理60min后,与对照组相比,线虫子代数没有差异(P>0.05)㊂这表明热激处理对线虫的生殖力并未保护,不影响其生殖能力(图5)㊂2.6㊀热激处理对铜胁迫的秀丽线虫肠屏障功能的影响㊀㊀为观察热激处理线虫对其肠道的保护作用,以最佳热激条件对线虫进行预处理1h,恢复1h后以150mg㊃L-1CuSO4暴露培养,分别对线虫进行艾氏氯酸钠溶液染色,体视显微镜拍照观察秀丽线虫肠屏障染色,如图6所示㊂由图6(b)可知,铜暴露破坏了肠的完整性并导致染料渗漏到体腔中,体腔内染料随暴露时间延长而增加㊂与20.0ħ处理相比,如图6(c)所示,热激处理后降低了体腔内带有染料的秀丽线虫的比例㊂这说明热激保护线虫肠上皮细胞,使染料渗入肠道减缓,保护肠屏障功能㊂图4㊀不同温度热激处理对铜胁迫下秀丽线虫体长的影响注:(a)20.0ħ对照组;(b)20.0ħ,150mg㊃L-1处理组;(c)32.5ħ,150mg㊃L-1处理组;(d)不同温度铜胁迫下秀丽线虫的体长;*表示P<0.05,**表示P<0.01㊂Fig.4㊀The effect of heat shock treatments at different temperatures on the body lengthof C.elegans under different concentrations of copper stressNote:(a)The representative image of C.elegans of control group at20.0ħ;(b)The representative image of C.elegans at20.0ħunder150mg㊃L-1copper stress;(c)The representative image of C.elegans at32.5ħunder150mg㊃L-1copper stress;(d)The body length of C.elegans at different temperature under copper stress;*represent P<0.05,**represents P<0.01.486㊀生态毒理学报第18卷2.7㊀热激处理对铜胁迫的秀丽线虫DAF-16::GFP 转位入核的影响㊀㊀DAF-16正常情况下位于线虫细胞质中,在胁迫环境下可被不同蛋白激活,进入细胞核行使转录因子的功能,从而提高线虫应激能力,延长线虫在胁迫下的寿命㊂绿色荧光蛋白(GFP)在特定波长激发下可产生绿色荧光㊂本文通过TJ356(DAF-16::GFP)转基因线虫进行DAF-16的细胞核定位实验,研究不同温度处理对铜胁迫的秀丽线虫的保护机制㊂线虫的DAF-16::GFP转位入核如图7所示,由图7(a)可知,正常情况下,对照组无明显入核现象;与正常处理组相比,20.0ħ下铜暴露处理,TJ356线虫体内的DAF-16::GFP荧光定位于细胞核分布的比例明显上升,说明线虫产生应激,DAF-16::GFP转位入核㊂当TJ356线虫经32.5ħ热激预处理后,未经铜暴露的线虫DAF-16出现明显入核现象,而热激处理后的铜暴露线虫DAF-16入核率继续升高,肠中的DAF-16::GFP核在热激处理后也比在20.0ħ时更明亮,与正常处理铜暴露线虫的DAF-16::GFP转位入核率相比增加了9.820%(图7(c))㊂这说明铜暴露可使DAF-16入核,使其产生对自身的保护作用,而热激预处理可促进DAF-16转位入核,进一步证实热激的铜耐受作用依赖DAF-16基因的活性,延长线虫寿命㊂2.8㊀热激处理对铜胁迫的秀丽线虫热休克蛋白HSP-16.2表达的影响㊀㊀热休克蛋白HSP-16.2通常被认为是敏感的抗应激标志物,为探究热激处理对铜胁迫线虫的应激反应,利用TJ375线虫对不同温度处理铜胁迫的秀丽线虫热休克蛋白HSP-16.2的表达进行显微观察(图8)㊂无热激状态下,TJ375线虫的HSP-16.2蛋白表达较低,热激处理后1h就观察到HSP-16.2表达,热激处理秀丽线虫与正常处理秀丽线虫相比,热休克蛋白HSP-16.2的表达有明显的增高㊂这一结果表明,与在20.0ħ正常培养的秀丽线虫相比,经过热激处理的秀丽线虫中HSP-16.2的表达发生得更早且强度更大㊂3㊀讨论(Discussion)随着社会工业化进步㊁农用化学物质种类和数量的增加,重金属污染日益严重,其中,铜㊁锌和镉是主要重金属污染物之一㊂重金属在环境中难降解,难迁移,且易富集,难排出,对生态系统中各种生物以及人体会造成严重危害㊂本实验进行了秀丽线虫对铜的耐受实验,观察铜对线虫生理生化的损伤㊂此外,线虫热激实验是通过给线虫体外热刺激,诱导线虫体内的应激抵抗反应,使线虫体内的应激蛋白㊁抗热㊁耐热蛋白过表达,从而提高自身耐受能力㊂本图5㊀不同温度热激处理下对秀丽线虫子代数量的影响Fig.5㊀The effect of heat shock treatments at different temperatures on the offsprings of C.elegans图6㊀不同温度热激处理对铜胁迫下的秀丽线虫肠屏障功能的影响注:(a)20.0ħ对照组;(b)20.0ħ150mg㊃L-1处理组;(c)32.5ħ150mg㊃L-1处理组㊂Fig.6㊀The effect of heat shock treatments at different temperatures on intestinal barrier function of C.elegans under copper stress Note:(a)The representative image of C.elegans of control group at20.0ħ;(b)The representative image of C.elegans at20.0ħunder150mg㊃L-1copper stress;(c)The representative image of C.elegans at32.5ħunder150mg㊃L-1copper stress.第2期何梅等:热激预处理诱导秀丽隐杆线虫铜耐受的效应机制研究487㊀图7㊀不同温度热激处理对铜胁迫下的秀丽线虫DAF-16::GFP 转位入核的影响注:(a)20.0ħ对照组;(b)20.0ħ150mg ㊃L -1处理组;(c)32.5ħ150mg ㊃L -1处理组;(d)不同温度铜胁迫下秀丽线虫的核定位;显微镜放大倍数为10ˑ40;*表示P <0.05㊂Fig.7㊀Effect of heat shock treatments at different temperatures on DAF -16::GFP translocation intothe nucleus of C.elegans under copper stressNote:(a)The representative image of C.elegans of control group at 20.0ħ;(b)The representative image of C.elegans at 20.0ħunder 150mg ㊃L -1copper stress;(c)The representative image of C.elegans at 32.5ħunder 150mg ㊃L -1copper stress;(d)Nuclear localization (%)of C.elegans atdifferent temperature under copper stress;photomicrographs were taken at 400ˑmagnifications;*represent P <0.05.文即利用热激预处理,观察秀丽线虫在不同热激温度和热激时间下的铜毒性㊁体长㊁后代数目,评价热激预处理引起铜耐受的效应,且通过DAF -16::GFP 转位入核㊁热休克蛋白HSP -16.2的表达和肠屏障染色揭示热激处理引起铜耐受的机制㊂转录因子DAF -16是forkhead (FOXO)家族的成员,是衰老㊁代谢和应激反应所必需的㊂激活后DAF -16从胞质溶胶转移至细胞核,发挥转录功能㊂HSP -16.2是DAF -16调控的众多热休克蛋白之一[23]㊂在铜暴露下,热激处理的秀丽线虫中的DAF -16核定位率明显高于未处理组㊂肠中的DAF -16::GFP 核在热激处理后也比在20.0ħ时更明亮㊂关于DAF -16::GFP 核易位的数据与热激处理下的HSP -16.2表达有很好的相关性㊂HSPs 是高度保守的细胞内分子伴侣,在缓解响应热激㊁氧化应激和重金属暴露的蛋白质错误折叠中起关键作用㊂在酵母中进行的研究发现,重金属暴露会导致新生蛋白质的广泛错误折叠和聚集[24]㊂重金属暴露不仅诱导活性氧的产生,还对抗氧化系统产生抑制作用,最终导致大分子的损伤[25]㊂作为一种胞质伴侣,HSP -16.2的积累代表了强的胞质应激反应,可与氧化应激相抵消㊂因此,高水平HSP -16.2的表达和积累对铜暴露下的肠上皮细胞具有保护作用㊂在热激处理条件下,全身各部位均可见HSP -16.2的表达,在咽㊁肠部位GFP 信号最强㊂对于未经热激处理铜暴露的秀丽线虫,仅在咽中观察到HSP -16.2表达,而在肠和身体其他部位观察到弱表达㊂观察到的不同表达模式可能反映了HSP -16.2在维持肠屏障完整性方面的保护作用,肠屏障完整性是致死的主要原因之一㊂上皮不仅作为在食物消化和同化中起作用的消化器官,而且作为抵抗病原体和有毒物质的选择性渗透屏障,肠屏障的完整性对于存在环境毒物的情况下存活是至关重要的[26]㊂又有研究表明中等温度和短暂的时间热激处理能有效地提高秀丽线虫对重金属的耐受性[27],Olsen 等[28]研究发现短暂的热激处理能产生有益效应,从而促进秀丽线虫体长增加,缓解铜对秀丽线虫生长的抑制,但短暂的热激处理488㊀生态毒理学报第18卷并不能对秀丽线虫的生殖力起到保护,进而推断热激不能保护秀丽线虫的生殖腺㊂综上所述,铜胁迫会造成线虫死亡,其致死率与铜浓度和暴露时间有关,并可造成秀丽线虫生殖腺细胞凋亡,热激预处理可对线虫起到保护作用,减少线虫的死亡,导致秀丽线虫对铜的耐受性提高,显著增加线虫体长,但对其生殖力没有保护㊂实验利用荧光显微镜拍照获得可视化结果,结果表明肠屏障的破坏是铜暴露下致死的原因㊂而热激处理后能使DAF-16转位入核率增加,引起热休克蛋白HSP-16.2表达的增加,推测是由于HSP-16.2也是DAF-16的下游基因,DAF-16的活化也导致了HSP-16.2的表达增加,而高水平的热休克蛋白HSP-16.2表达能有效地保护肠上皮细胞,缓解肠屏障损伤㊂图8㊀不同温度热激处理对铜胁迫下的秀丽线虫热休克蛋白HSP-16.2表达的影响注:(a)20.0ħ对照组;(b)20.0ħ150mg㊃L-1处理组;(c)32.5ħ150mg㊃L-1处理组;(d)不同温度铜胁迫下秀丽线虫的HSP-16.2表达;显微镜放大倍数为10ˑ40;*表示P<0.05㊂Fig.8㊀The effect of different temperatures heat shock treatments on the expression of heat shock protein HSP-16.2of C.elegans under copper stressNote:(a)The representative image of C.elegans of control group at20.0ħ;(b)The representative image of C.elegans at20.0ħunder150mg㊃L-1 copper stress;(c)The representative image of C.elegans at32.5ħunder150mg㊃L-1copper stress;(d)The fluorescence intensity(%)of C.elegans at different temperature under copper stress;photomicrographs were taken at400ˑmagnifications;*represent P<0.05.通信作者简介:罗勋(1972 ),男,博士,教授,主要研究方向为环境毒理学㊂参考文献(References):[1]㊀Egorova K S,Ananikov V P.Toxicity of metal com-pounds:Knowledge and myths[J].Organometallics,2017,36(21):4071-4090[2]㊀Baki M A,Hossain M M,Akter J,et al.Concentration ofheavy metals in seafood(fishes,shrimp,lobster and crabs)and human health assessment in Saint Martin Island,Ban-gladesh[J].Ecotoxicology and Environmental Safety,2018,159:153-163[3]㊀鲁陈,胡贺,杜方超,等.有机铜在动物生产中的研究进展[J].饲料博览,2019(5):41-47Lu C,Hu H,Du F C,et al.Research progress of organiccopper in animal production[J].Feed Review,2019(5):41-47(in Chinese)[4]㊀Puig S,Thiele D J.Molecular mechanisms of copper up-take and distribution[J].Current Opinion in Chemical Bi-ology,2002,6(2):171-180[5]㊀Vázquez-Blanco R,Arias-Estévez M,Bååth E,et 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(论文)富氢水制备及保存方法的初步研究

(论文)富氢水制备及保存方法的初步研究

Study o f t he p reparation a nd the p reservation m ethod of t he h ydrogen-rich w ater【ABSTRACT 】 OBJECTIVE: Preliminary studies were performed on a device for preparing hydrogen-rich water,preparation of hydrogen-rich water,and hydrogen-rich water preservation method. METHODS :After preparation o f h ydrogen-rich w ater, t he e ffect o f t he v entilation u nder d ifferent p ressures (0.1,0.2,0.3,0.4 M Pa),the different v entilation t ime (0.5,1,2,4,8 h ) a nd t he d ifferent v acuum t ime (0,5,10,30,60 m in) o n t he h ydrogen concentration o f h ydrogen-rich w ater w ere m easured,and t he i mpact o f t he t emperature,storage c ontainers,observing time,content a nd m embrane f iltration o n t he h ydrogen c oncentration c hanges o f h ydrogen-rich w ater w ere a lso e valuated. RESULTS :The v entilation p ressure h ad n o s ignificant e ffect o n t he h ydrogen c oncentration(P >0.05). V entilation t ime and v acuum t ime s howed a c ertain e ffect o n h ydrogen c oncentration w hen v entilating a bove 4 h o r v acuum p umping m ore than 5 m in,the h ydrogen c oncentration i ncreased s ignificantly(P <0.05 o r P <0.01),which w as g radually d ecreased w ith the e xtension o f s torage t ime(P <0.05). T he s torage c ontainer a nd t he t emperature o f p reservation h ad n o o bviously e ffect o n hydrogen concentration(P >0.05). The amount of water loaded had obvious effect on hydrogen concentration(P <0.05). Filtration reduced hydrogen concentration(P <0.05). CONCLUSION :We have successfully prepared hydrogen-rich water i n c ertain c oncentration,and s tudied t he p reservation m ethods o f h ydrogen-rich w ater.【KEY W ORDS 】 h ydrogen-rich w ater;preparation;stability;preservation m ethod【摘要】 目的: 建立富氢水的制备装置,制备富氢水,并对富氢水的保存方法进行初步研究。

1.4571德标标准 -回复

1.4571德标标准 -回复

1.4571德标标准-回复1.4571德标标准是什么?德标标准是指德国工业标准,也被称为DIN(德意志工业标准)标准。

其中,1.4571编号代表了一种特定的不锈钢材料。

这种不锈钢材料在德国标准机构(DIN)中被命名为X6CrNiMoTi17-12-2。

这种不锈钢材料主要用于制造高温、高腐蚀环境下的设备和部件,比如化工设备、石油炼制装置、食品加工设备等。

其化学成分包括:0.08碳(C)、2.00硅(Si)、1.00锰(Mn)、17.0-19.0镍(Ni)、12.0-14.0铬(Cr)、1.0-2.5钼(Mo)、0.040磷(P)、0.015硫(S)、0.15-0.35钛(Ti)。

2. 1.4571德标标准的特点是什么?1.4571德标标准的主要特点如下:高耐蚀性:该材料由于其高镍和钼含量,具有出色的耐蚀性能,能够抵御氯离子、硫化物和酸等强腐蚀性介质的侵蚀。

抗高温性:1.4571不锈钢具有良好的高温稳定性,在800-850C的高温下仍然能够保持良好的性能,不易发生晶间腐蚀。

良好的韧性:该材料具有优异的韧性和冲击韧性,能够在低温下保持高强度和良好的抗裂纹性。

易加工性:1.4571不锈钢可通过常见的加工方法如锻造、冷加工、焊接等进行加工和制造。

3. 1.4571德标标准的应用领域有哪些?1.4571德标标准的应用领域广泛,特别适用于那些要求高耐蚀性和高温耐受性的场合。

以下是一些主要的应用领域:化工工业:用于制造化学反应容器、化工管道、石油炼制设备等。

食品加工业:用于制造食品加工设备、槽车、输送系统等。

医疗行业:用于制造医疗设备、手术器械、牙科设备等。

能源行业:用于制造核电站设备、风力发电设备、石油开采设备等。

船舶建造业:用于制造船舶的储罐、管道、吊装设备等。

4. 1.4571德标标准的优势和不足是什么?1.4571德标标准的优势包括:优异的耐蚀性:能够耐受多种腐蚀介质的侵蚀,延长设备的使用寿命。

良好的高温稳定性:能够在高温环境下保持性能稳定,不易发生晶间腐蚀。

氢吗啡酮的临床应用

氢吗啡酮的临床应用

氢吗啡酮的临床应用简文亭;简道林;马会改【摘要】氢吗啡酮是一种半合成的阿片类镇痛药,作为吗啡的替代用药,在国外已被广泛地用于围手术期的镇痛、急慢性疼痛、癌性疼痛等的治疗。

该文概述了氢吗啡酮的药理作用、临床应用、不良反应等。

【期刊名称】《医药导报》【年(卷),期】2014(000)009【总页数】4页(P1204-1207)【关键词】氢吗啡酮;药理作用;临床应用【作者】简文亭;简道林;马会改【作者单位】三峡大学仁和医院麻醉科,宜昌443002;三峡大学仁和医院麻醉科,宜昌 443002;三峡大学仁和医院麻醉科,宜昌 443002【正文语种】中文【中图分类】R971.2;R969氢吗啡酮是一种半合成的阿片类镇痛药,主要作用于阿片μ受体,并在较小程度上作用于δ受体, 1921年在德国合成,1926年被应用于临床。

氢吗啡酮镇痛作用是吗啡的5~8倍,起效快,主要代谢产物无活性,不良反应少于吗啡[1],适合用于急慢性疼痛以及癌症疼痛的治疗,临床应用安全有效。

氢吗啡酮剂型较多,可通过肌内注射、静脉注射、口服、皮下注射、硬膜外注射等方式给药,其中前4种给药方式的起效时间分别为15,10~15,30,15 min;达峰值时间分别为30~60,15~30,90~120,30~90 min。

作用维持时间(仅对非耐受患者)分别为4~5,2~3,4,4 h。

氢吗啡酮口服制剂在小肠上部被吸收,由肝脏代谢,肾脏排泄。

主要代谢生成氢吗啡酮-3-葡糖苷酸(H3G)、双氢异吗啡-葡糖苷酸[2]和不经过肾脏消除的有活性的产物(如6-葡糖苷酸代谢物)。

研究发现, H3G具有神经兴奋作用,主要表现包括肌阵挛、强直阵挛性抽搐、触摸诱发情绪激动等[3-4]。

氢吗啡酮和吗啡的理化性质相近,两者口服生物利用度分别为50%和30%,对μ-阿片受体亲和力指数分别为0.6和1.2 nmol,对δ-阿片受体亲和力指数分别为0.0和68.5 nmol,对κ-阿片受体亲和力指数分别为55和26 nmol[1]。

垂体柄阻断综合征合并肝硬化1例报告 田华

垂体柄阻断综合征合并肝硬化1例报告 田华
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211221312_地表偏堆载引起浅埋大断面隧道裂损衬砌病害整治

211221312_地表偏堆载引起浅埋大断面隧道裂损衬砌病害整治

工程建设2023/05CHINA RAILWAY 地表偏堆载引起浅埋大断面隧道裂损衬砌病害整治孟庆余, 陈宇(中国铁路设计集团有限公司 土建工程设计研究院,天津 300251)摘要:隧道洞顶堆载常会引起隧道结构变形过大甚至开裂,影响结构安全。

以某高铁隧道洞身浅埋段堆载偏压导致衬砌发生纵裂的工程问题为依托,通过洞内沉降、收敛和中线偏移监测,洞外沉降、变形和测斜监测,结合数值模拟手段,对隧道衬砌结构产生裂缝的原因进行分析。

针对外部堆载造成衬砌纵裂情况,采用洞外清方减载和洞内套衬内外相结合补强措施进行整治,结合外部环境条件确定整治施工要点,同时在隧道一定范围内地表划定保护区,确保高铁隧道运营期的安全。

关键词:高速铁路;隧道;浅埋偏压;堆载;衬砌纵裂;套衬中图分类号:U457 文献标识码:A 文章编号:1001-683X (2023)05-0059-07DOI :10.19549/j.issn.1001-683x.2022.11.21.0010 引言 随着高速铁路路网日趋完善,修建山岭隧道规模和难度越来越大,隧道施工和运营期间不可避免会受到周边环境影响,其中地表堆载引起隧道浅埋段衬砌结构开裂问题值得特别关注[1-4]。

隧道衬砌结构是保证列车运行安全的重要结构体系,若衬砌发生严重开裂,对列车运行安全存在严重安全隐患[5-6],因此,有必要对隧道衬砌结构的开裂原因及处理措施进行深入研究。

目前,众多学者对浅埋偏压隧道研究较多,张庆海等[7]采用数值模拟的手段对浅埋偏压隧道不同埋深下的衬砌结构受力特征以及裂缝开裂扩展情况进行研究,发现浅埋偏压地段,隧道上覆岩土层超过7 m 时,隧道衬砌结构出现不同的开裂现象,部分衬砌形成了纵向贯通裂缝;高睿等[8]对一浅埋偏压小净距分离式隧道的仰坡滑移及衬砌开裂问题进行了多方面原因分析,提出兼顾边坡稳定和衬砌加固的综合治理措施;方恩权等[9]对紧邻既有隧道的新建隧道通过现场调查、数值模拟等方法分析其裂缝发展情况及成因,提出凿除重构严重开裂衬砌及注浆锚杆加固隧道间破基金项目:中国铁路设计集团有限公司科研开发项目(2021B240615)第一作者:孟庆余(1976—),男,正高级工程师。

姜黄素通过下调HO-1

姜黄素通过下调HO-1

姜黄素通过下调HO -1/NQO1保护肝癌模型小鼠*牟海军, 陈幸幸, 刘安安, 张丽, 朱加兴, 金海△(遵义医科大学附属医院消化病医院,遵义医科大学附属医院消化内科,贵州 遵义 563000)[摘要] 目的:观察姜黄素对N -亚硝基二乙胺(DEN )联合四氯化碳(CCl 4)诱导的C57BL/6J 小鼠肝癌模型的作用并探索其机制。

方法:取14日龄雄性C57BL/6J 小鼠腹腔注射DEN (25 mg/kg ),随机分成模型组和姜黄素(100、200和400 mg/kg )给药组,另取同龄雄性小鼠10只作为正常对照组。

模型组和姜黄素给药组从第8周开始灌胃给予10% CCl 4(5 mL/kg ),每周2次;同时,给药组开始灌胃姜黄素,正常对照组灌胃等体积的蒸馏水,每天1次,连续14周。

给药结束后处死小鼠,检测小鼠血清丙氨酸转氨酶(ALT )和天冬氨酸转氨酶(AST )活性,观察肝组织病理学变化,检测血红素加氧酶1(HO -1)和NAD (P )H -醌氧化还原酶1(NQO1)的mRNA 表达水平,以及HO -1、NQO1和Ki67蛋白表达水平。

结果:与正常对照组比较,模型组小鼠体重显著降低(P <0.01),肝脏指数显著增加(P <0.01),血清ALT 和AST 活性显著升高(P <0.01),HO -1和NQO1的mRNA 表达水平无显著差异(P >0.05),HO -1和NQO1蛋白表达水平显著升高(P <0.05),Ki67阳性表达率显著增加(P <0.05)。

姜黄素治疗后,小鼠体重显著升高(P <0.01),肝脏指数无明显变化(P >0.05),癌结节数量显著减少(P <0.05或P <0.01),血清AST 活性显著降低(P <0.01),HO -1和NQO1的mRNA 及蛋白表达水平显著降低(P <0.05),Ki67阳性表达率显著降低(P <0.05)。

UG库材料对照

UG库材料对照

2A14(新)LD10( 6061
H96、H90、H85、
QSn4-0r 60 45、16Mn
QT400-18、QT40
Q235A/B/C/
15CrMoG、38CrM
1Cr13、1Cr13 TC1 LF4 8 YT15 T2 HT250 HT400 QT600-3
Aluminum-2014 Aluminum-6061 Brass Bronze Iron-Malleable Iron-Nodular Iron-40 Iron-60 Steel Steel-Rolled S/Steel-PH15-5 AISI-410-SS AISI-310-SS Titanium-Alloy Aluminum-5086 AISI-STEEL-1008-HR AISI-STEEL-4340 Tungsten Copper-C10100 Iron-Cast-G25 Iron-Cast-G40 Iron-Cast-G60 Magnesium-Cast AISI-SS-304-Annealed Titanium-Annealed AISI-Steel-Maeaging AISI-Steel-1005 Inconel-718-Aged Tianium-Ti-6AL-4V UG材料库名称
铝合金 铝合金 黄铜 青铜 可锻铸铁 球墨铸铁 40钢(结构钢) 60钢(结构钢) 中碳钢 轧钢 钼合金钢 耐热钢(不锈钢) 耐热钢(不锈钢) 钛合金 AL-Mg系铝合金 淬硬优质碳素结构钢 优质合金结构钢 钨合金 铜合金 铸铁 镁合金铸铁 304不锈钢 退火钛合金 马氏体实效钢 碳素钢 沉淀硬化不锈钢 钛合金 对应中文名称 UG高级仿真所提供的材料
2Cr25Ni20、0Cr2
40CrNiMoA
AZ40M、AZ62 TA2 16MnCr5 05F TC4 对应材料

临床疑诊肺癌纵隔淋巴结转移EBUS-TBNA阴性患者的处理

临床疑诊肺癌纵隔淋巴结转移EBUS-TBNA阴性患者的处理

临床疑诊肺癌纵隔淋巴结转移EBUS-TBNA阴性患者的处理留永健; 陈闽江; 孙雪峰; 邵池; 徐燕; 陈勇; 赵媛媛; 赵静; 王孟昭【期刊名称】《《中国肺癌杂志》》【年(卷),期】2019(022)004【总页数】5页(P223-227)【关键词】超声内镜引导下的经支气管针吸活检; 病理阴性; 肺肿瘤【作者】留永健; 陈闽江; 孙雪峰; 邵池; 徐燕; 陈勇; 赵媛媛; 赵静; 王孟昭【作者单位】100730北京中国医学科学院北京协和医学院北京协和医院呼吸与危重症医学科【正文语种】中文随着支气管镜下超声影像的发展,该技术已经成为呼吸病学中一项重要的微创技术。

目前超声支气管镜(endobronchial ultrasound, EBUS)可分为凸面超声和小探头超声两种,分别于1990年和2004年进入临床使用[1,2]。

其中经超声气管镜引导下针吸活检(endobronchial ultrasound guided transbronchial needle aspiration, EBUS-TBNA)结合了超声及细针穿刺活检,是对于纵隔肿大淋巴结进行病理诊断一项重要手段。

该技术对肺癌纵隔淋巴结转移的诊断敏感性、特异性和准确性均超过了90%,同时与纵隔镜相比操作简便和创伤更小,易于被患者接受。

近年来,多个研究提示EBUS-TBNA在肺癌诊断和淋巴结分期、结节病以及结核等疾病的诊断中有重要作用[3-5],对肺癌纵隔淋巴结转移评估也写进了多个肺癌临床诊治指南。

但是对于拟诊肺癌纵隔淋巴结转移的患者EBUS-TBNA病理诊断阴性时应该如何处理呢? 本文进行了相关的探讨。

1 资料与方法1.1 研究人群回顾性分析北京协和医院自2010年9月-2016年12月接受EBUS-TBNA检查的患者共1,412例。

最终诊断肺部恶性疾病747例(53%),结节病353例(25%),其他诊断包括反应性增生淋巴结、结核等感染、囊肿、胸腔内甲状腺等。

眼蕈蚊属害虫危害金线莲的首次报道(英文)

眼蕈蚊属害虫危害金线莲的首次报道(英文)

环境昆虫学报2021, 43 (3): 775 -778Joerxal p Exviroxmeotol Extonofgyhttp : 〃hjkcxb. alljournals. netdoi : 10. 3969/j. W o n 1674 -0858. 2021.03. 30陈思琪,余金咏,Haoan Baber ,黄俊浩,许益镌.眼蕈蚊属害虫危害金线莲的首次报道(英文)[J ].环境昆虫学报,2021 , 43 (3):775 -778.眼蕈蚊属害虫危害金线莲的首次报道(英文)陈思琪1,余金咏2 , Hassan Babar 1,黄俊浩3** ,许益镌基金项目:教育部产学研联合创新基金(CXZJHZ201732);惠州科技计划项目(20170712224043)作者简介:陈思琪,女,1994年生,硕士,研究方向为植物检疫与入侵生物学,E-mail : *****************共同通讯作者Author Os correspondence :黄俊浩,博士,副教授,研究方向为昆虫生态学,E - mail : junhao_huang@ hoOnaiJ com ;许益镌, 博士,教授,研究方向为昆虫生态与社会昆虫学,E - mail : xuyguan@oau. cdu. cn收稿日期 Receded : 2020 —04 — 15 ;接受日期 Accepted : 2020 —04 —21(1.华南农业大学昆虫学系,广州510642; 2.河北科技师范学院农学物技术学院,河北秦皇岛066600;3.浙江农林大学森林保护系,杭州311300)摘要:兰科OohiXxeae 植物金线莲AxoedochUus sucbuphii ( Wall. ) Lindl 是一种在中国广泛使用的中草药。

本文首 次报道两种迟眼蕈蚊属害虫危害金线莲,即Bradyia 0x )01101 ( Johannsen , 1912)和Budyia oceUaUs ( Comstock ,1882)。

新生儿精氨酰琥珀酸尿症一例并文献复习

新生儿精氨酰琥珀酸尿症一例并文献复习

新生儿精氨酰琥珀酸尿症一例并文献复习胡启发1,高镝2,苏喆1,31.遵义医科大学珠海校区,广东珠海519041;2.深圳市儿童医院新生儿科,广东深圳518026;3.深圳市儿童医院内分泌科,广东深圳518038【摘要】精氨酰琥珀酸尿症是一种罕见的常染色体隐性遗传病,属于尿素循环障碍性疾病的一种类型。

临床表现从无症状到出现高氨血症的相关症状,包括肝功能障碍、神经认知缺陷、行为异常和学习障碍等。

本文报道了1例ASL 基因突变导致新生儿期发病的精氨酰琥珀酸尿症,回顾分析ASL 基因突变导致精氨酰琥珀酸尿症的临床特点及诊治过程,并结合相关文献进一步分析,以提高临床医生对这一罕见疾病的早期识别。

【关键词】新生儿;精氨酰琥珀酸裂解酶;精氨酰琥珀酸尿症;尿素循环障碍【中图分类号】R722【文献标识码】D【文章编号】1003—6350(2023)17—2567—04A case of neonatal arginosuccinic aciduria and literature review.HU Qi-fa 1,GAO Di 2,SU Zhe 1,3.1.Zunyi Medical University (Zhuhai Campus),Zhuhai 519041,Guangdong,CHINA;2.Department of Neonatology,Shenzhen Children's Hospital,Shenzhen 518026,Guangdong,CHINA;3.Department of Endocrinology,Shenzhen Children's Hospital,Shenzhen 518038,Guangdong,CHINA【Abstract 】Argininosuccinic aciduria is a rare autosomal recessive disorder,a type of urea cycle disorder.Clin-ical manifestations range from asymptomatic to the symptoms associated with hyperammonemia,including liver dys-function,neurocognitive deficits,behavioral abnormalities,and learning disabilities.This paper reported a case of ar-ginosuccinuria in the neonatal period,reviewed the clinical characteristics and diagnosis and treatment of arginuria,and further analysis combined with relevant literature to improve the early identification of this rare disease by clini-cians.【Key words 】Newborn;Arginylsuccinate lyase;Arginylsuccinuria;Urea cycle disorder ·个案报道·doi:10.3969/j.issn.1003-6350.2023.17.028基金项目:广东省卫生健康委员会高水平临床重点专科(深圳市配套建设经费)项目(编号:SJGSP012);广东省深圳市科技计划支柱可持续发展专项(编号:KBXFJ20201221173400002)。

IN457中文资料

IN457中文资料

Thermal Characteristics
Symbol
PD RθJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient
Min
30 70 150 200
Max
Units
V V V V nA µA nA µA nA µA nA µA V V V V V pF
IR
Reverse Current
VF
Forward Voltage
456 457 458 459 456/A-459/A
CO
Diode Capacitance
25 5.0 25 5.0 25 5.0 25 5.0 1.0 1.0 1.0 1.0 1.0 6.0
High Conductance Low Leakage Diode
(continued)
Electrical Characteristics
Symbol
BV
TA = 25°C unless otherwise noted
Parameter
Breakdown Voltage 456/A 457/A 458/A 459/A 456/A 457/A 458/A 459/A
Rev. E
元器件交易网
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
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DR A F TGetting Started GuideADuCM360/ADuCM361One Technology Way • P.O. Box 9106 • Norwood, MA 02062-9106, U.S.A. • Tel: 781.329.4700 • Fax: 781.461.3113 • ADuCM360 Development Systems Getting Started TutorialINTRODUCTIONThe ADuCM360 is a fully integrated, 4 kSPS, 24-bit data acquisition system that incorporates dual, high performance multichannel sigma-delta (Σ-Δ) analog-to-digital converters (ADCs), a 32-bit ARM Cortex™-M3 processor, and Flash/EE memory on a single chip. The ADuCM360 is designed for direct interfacing to external precision sensors in both wired and battery-powered applications. The ADuCM361 contains all the features of the ADuCM360 except that only ADC1 is available.Refer to the ADuCM360/ADuCM361 product page for future updates.Additional support for the ADuCM360/ADuCM361 is available through the EngineerZone® website.GENERAL DESCRIPTIONThe ADuCM360 development system allows evaluation of ADuCM360 silicon. This getting started guide introduces the support features and the tools supplied with the evaluation kit. In addition, it shows and describes how to connect the evaluation hardware.This guide describes the software files that are included on the CD and FTP site, and how to download them. The FTP site, should be opened in Windows® Explorer.This guide works as a tutorial by providing a step-by-step account of how to download evaluation versions of third- party software tools. Instructions are provided on how to load code examples that are supplied on the CD and on the FTP site. These examples demonstrate simple operation of the ADuCM360.Working through this guide brings the user to a stage whereby they can start to generate and download their own user code for use in their own unique end-system requirements.Figure 1. ADuCM360 mini board connected to ADI J-Link OB emulatorDR A F TADuCM360/ADuCM361Getting Started GuideTABLE OF CONTENTSIntroduction ...................................................................................... 1 General Description ......................................................................... 1 Revision History ............................................................................... 2 Development System Contents ....................................................... 3 Evaluation Board .......................................................................... 3 J-Link OB Emulator ..................................................................... 3 Connecting the Hardware ........................................................... 3 Software Installation......................................................................... 4 Software content ........................................................................... 4 Function ............................................................................................ 4 Instructions ................................................................................... 4 Programs Installed ....................................................................... 4 Keil µVision4 Integrated Development Environment ................. 6 Introduction ...................................................................................6 Quick Start Steps ...........................................................................6 Extra Optional Details on µVision .............................................7 IAR Embedded Workbench IDE .................................................. 12 Starting IAR Embedded Workbench ....................................... 12 Quick Start Steps ........................................................................ 12 Elves .................................................................................................. 14 Using Elves.exe with µVision4 ................................................. 14 Windows Serial Downloader .. (15)Preparing for Download ........................................................... 15 Downloading Using CM3WSD ................................................ 15 Running the Downloaded File . (15)REVISION HISTORY9/12—Revision 0: Initial Version1/1- Revision A: Description of new hardware. Description of new installer.DR A F TGetting Started GuideADuCM360/ADuCM361DEVELOPMENT SYSTEM CONTENTSThe EV AL-ADuCM360QSPZ is an evaluation kit for the ADuCM360 and ADuCM361. This kit features a mini board (EV AL-ADuCM360MKZ), and an ADI J-Link OB emulator (USB-SWD/UART-EMUZ) that connects to a PC USB port via a USB cable. A comprehensive set of development tools is included on the DVD.Figure 2. ADuCM360 mini board connected to ADI J-Link OB emulatorThe development system contains the following: • An ADuCM360 mini board, • An ADI J-Link OB emulator, • 1 USB cable, •A DVD.EVALUATION BOARDThe EV AL-ADUCM360MKZ mini-board facilitatesperformance evaluation of the device with a minimum of external components. The board schematic is available after installation of the software in the documentation folder. By default, this is:\ADuCMxxxV1.3\Documentation\ADuCM360\Evaluation Board\Eval-ADuCM360MKZ.J-LINK OB EMULATORThe J-Link OB emulator provides non-intrusive emulation via serial wire, and also provides supply and UART communication with the ADuCM360 mini board. Figure 3 shows a top view ofthe emulator board. J2 connector plugs into the ADuCM360 mini board. J2 connector pinout is shown in Figure 4.Figure 3. Emulator top viewFigure 4. J2 connectorFor downloading and debugging, LK1, LK2, LK4 and LK6 must be inserted. LK3 and LK5 are required to communicate via UART. Required software for the J-Link OB is included in the software installation.Note that J-Link OB emulator replaces J-Link Lite and interface boards previously shipped in the ADuCM360 development system.CONNECTING THE HARDWAREDo not plug in the emulator and mini-board before the software is installed. See the Software Installation section.DR A F TADuCM360/ADuCM361Getting Started GuideSOFTWARE INSTALLATIONA DVD is included in the development system. The DVD content is also available for download on the FTP site.SOFTWARE CONTENTThe following tools are provided: Tool FunctionKeilµVision4 For compiling/debugging and code development, a 32-kB limited version IAR’sEmbedded Workbench For compiling/ debugging and code development, a 32-kB limited versionCM3WSDThis software accepts a hex file and allows it to be downloaded via the USB interface to the ADuCM360 device on your evaluation board ElvesElves.exe is an application that assists a Cprogrammer in choosing appropriate functions from ADI libraries and simplifies deciding what values to place in the function parameters.The J-Link OB emulator also requires a driver, which is installed automatically.INSTRUCTIONSPerform the steps described in this section before plugging any of the USB devices into the PC.1. Close all open applications.2. Insert the development system DVD into you CD ROM drive.Optionally, download the ADuCMxxxV1.3 folder from the FTP and save it to your root directory. To reduce the download time, consider excluding either the IAR or Keil folders depending on which development environment you chose to use.3. Double click on ADuCMxxxV1.3.exe and follow the on-screen instructions. Y ou can choose to install Keil or/and IAR tools as part ofthe installation or at later stage:a. Run the mdk454.exe to install this version of Keil µVision.b. Run the EWARM-KS-CD-6402.exe to install this version of the IAR Embedded Workbench. The IAR EmbeddedWorkbench requires registering on the IAR website to obtain a free license key.Although you can install the development system, the IAR Embedded Workbench®, and Keil™ software onto any hard drive and into any directory you wish, for the purposes of simplicity, this guide assumes that you have installed at the default location ofC:\ADuCMxxxV1.3, C:\Program Files and C:\keil . In addition, the Keil tools are automatically installed under an ARM directory and are fully compatible with µVision3 or tools for 8051. If you chose the IAR tools, these will be installed by default into \Program Files\IAR Systems\Embedded Workbench 6.4 Kickstart .PROGRAMS INSTALLEDThe following software should now be copied or installed.1. The folder \ADuCMzzzV1.3\Software Tools\CM3WSD provides an executable called cm3WSD.exe . This software accepts a hexfile and allows it to be downloaded via the USB interface to the ADuCM360 device on your evaluation board. You may want to add a shortcut link for this executable to your desktop.2. Elves. In the \ADuCMxxxV1.3\Software Tools\Elves folder you will find the elves.exe files. These files are useful tools thataccompany the software function libraries in \ADuCMxxxV1.3\Code\ADuCM360\common . Again, no installation is required here, but you may want to add a shortcut link for this executable to your desktop.3. J-Link OB driver should now be installed. At this point, check that the driver is installed correctly.DR A F TGetting Started GuideADuCM360/ADuCM361a. Plug in the emulator and check the device manager here:b. Check that it appears twice in the Windows Device Manager, in the list of COM port and in the list of USB devices.Figure 5. Device ManagerThe J-Link OB emulator driver Setup_JLinkARM_V459d.exe can be found under ADuCMxxxV1.3\Segger.Note that the drivers for J-Link Lite and interface boards previously shipped in the ADuCM360 development system are available here: ftp:///pub/MicroConverter/ADuCMxxxV1.2/DR A F TADuCM360/ADuCM361Getting Started GuideKEIL µVISION4 INTEGRATED DEVELOPMENT ENVIRONMENTINTRODUCTIONThe µVision4 Integrated Development Environment (IDE) integrates all the tools necessary to edit, assemble, anddebug code. The ADuCM360 development system supports nonintrusive emulation limited to 32 kB code. This section describes the project setup steps in order to download and debug code on an ADuCM360 evaluation system. Analog Devices, Inc., recommends using the J-Link debugger driver.QUICK START STEPS Starting µVision4From the Start menu, choose All Programs>Keil µVision4. This loads the µVision4 IDE. The µVision4 executable is located at C:\Keil\UV4\Uv4.exe .1. To open one of the prepared Keil µVision example projectsin µVision, select Project>Open Project .Figure 6. Open an Example Project2. In the folder \ADuCM360V1.0\Code\examples\RTD_Demo , select the file RTD_Demo.uvproj . This opens the RTD example project.Figure 7. RTD Example ProjectTo compile and build all files, select the Build All icon .Once the build has completed, the code shown in Figure 8 appears.Figure 8. Build Output3. To download the code to the EV AL-ADUCM360MKZboard and begin a debug session, connect the J-Link Lite EV AL-ADUCM360MKZ and USB-SWD/UART boards together, and then connect these boards to your PC. 4. In μVision, click the Start/Stop Debug session iconor press Ctrl + F5 to start a debugging session.5. Click OK when the window shown in Figure 9 appears.Figure 9. Evaluation Mode6. Begin debugging your source code.Figure 10. Debug Source Code10952-01310952-01410952-01510952-01610952-017DR A F TGetting Started GuideADuCM360/ADuCM361EXTRA OPTIONAL DETAILS ON µVISIONThis section provides a more detailed explanation of the setup described in the Quick Start Steps section. Some users may prefer to setup via the Quick Start Steps section.ToolbarsUnder the View menu, two toolbars are available. • File toolbar •Build toolbarThe File toolbar is always available. The Build toolbar is active only when the IDE is in edit/compile mode. When a debug session is started, the debug toolbar appears. The debug toolbar is active only in download/debug mode.Starting a Project1. From the Project menu, select New µVision Project .Figure 11. Project Menu2. Create a new folder (ADIdemo ). To do so, go toC:\ADuCM360V1.0\Code\examples\ADIdemo and enter Demo as the project name. When asked to Select a CPU Data Base File , select ADuCM360.Figure 12. Select a CPU Data Base File3. Select the ADuCM360 as the target device.Figure 13. Select Device for Target4. Select No to the question that appears (see Figure 14). Thisindicates you are not automatically including the startup file startup.s to your project.Figure 14. µVision Startup Question5. Note that it is possible to change the compiler by selectingthe File Extensions, Books and Environment folder extension.Figure 15. File Extensions, Books and Environment6. For this demo, select the Use RealView Compiler , underthe Folders/Extensions tab.Figure 16. Components, Environment and Books7. Right-click on Target1 and select Option for Target1 toconfigure the settings for this project. By default, µVision4 uses the RealView compiler.• Select the Target tab.•Add 0x00000000 into the R/O Base and 0x20000000 in to the R/W Base to indicate to the compiler the Flash and RAM start addresses.• Ensure the IROM1 and IRAM1 Start and Size fields are filled in correctly.•Ensure that the Use MicroLIB option is enabled.10952-01810952-01910952-02010952-02110952-05310952-022DR A F TADuCM360/ADuCM361Getting Started GuideFigure 17. Options for Target8. Select the Linker tab and then select Use Memory Layoutfrom Target Dialog .Figure 18. Options for Target9. In the Output tab, select Create HEX File . The hex file canbe used by the I 2C downloader.Figure 19. Output Tab10. If you have an emulator, power up the evaluation board viathe USB connection and the interface board. Connect the interface board to the J-Link Lite, and connect J-Link Lite to your PC’s USB port using a USB cable.Note that an LED on the J-Link Lite emulator blinks several times before staying on, indicating that the emulator is communicating correctly with the PC.Configuring the J-Link Debugger Driver1. Right-click on Target1 and select Option for Target1 toconfigure the settings of this project.2. In the Debug tab, select Use: and then select J-LINK/J-Trace Cortex .Figure 20. Choose a Debugger3. Select Settings in Figure 20 and then configure as shown inFigure 21.Figure 21. Target Driver Setup4. Under Utilities, select Use Target Driver for FlashProgramming . Then, choose J-LINK/J-Trace Cortex and select the option Update Target before Debugging .10952-02310952-02410952-02510952-02610952-027DR A F TGetting Started GuideADuCM360/ADuCM361Figure 22. Continuing with Target Driver Setup5. Select Settings to display the dialog box shown inFigure 23.Figure 23. J-Link/J-Trace Cortex Setup6. Select Add to display the window shown in Figure 24.7. Select the driver for the generic that you are evaluating.For this example, use ADuCMxx 128kB Flash and then select Add .Figure 24. Add Flash Programming Algorithm8. Select OK when the window shown in Figure 25 appears.Figure 25. Finishing Target Driver Setup9. Select OK . All the options should be properly configuredto compile, assemble, link, download, and debug using J-Link Lite or the simulator.10. In the C/C++ tab, add the include path as shown inFigure 26.10952-02810952-02910952-03010952-031DR A F TADuCM360/ADuCM361Getting Started GuideFigure 26. Options for Target SetupAdding Project FilesAll the files relative to the project are in the folder \ADuCM360V1.0\Code\examples\Adc .Copy the files\ADuCM360V1.0\Code\examples\Adc \ADCMeter.c into the new directoryC:\ADuCM360V1.0\Code\examples\ADIdemo .1. To add the files to the project, right-click on the SourceGroup folder in the Project Workspace and select Add Files to Group .Figure 27. Adding Files to the ProjectNote that under Project>Manage , the optionComponents, Environment, Books can be used to rename the target and add the file relative to your project.Figure 28. Renaming the Target2. Add all the files listed in Figure 29 from the directory\ADuCM360V1.0\Code\common .Figure 29. Project Files3. Double-click on the file name (ADCMeter.c ) in theWorkspace window to open the source file.10952-03210952-03310952-03410952-035DR A F TGetting Started GuideADuCM360/ADuCM361Assembling/Compiling CodeTo compile/link ADCMeter.c, click on the(translate current file) icon in the toolbar. The file should compilecorrectly and the information shown in Figure 30 will appear in the build output window. If there are errors in your source code, these will appear in the status window. To identify the line of code that corresponds to the error, double click on the error in the Output window and an arrow will highlight the line of code in error. Before the code can be downloaded to the MicroConverter, the entire project must be built.This is done by clicking on the (rebuild all target files) icon on the toolbar. It will also create a demo.elf file used by the debugger.Figure 30. Build OutputDownloading/Debugging CodeSelect Start/Stop Debug or press the icon to startdebugging (start/stop debug session). The debugger indicates that you are using an evaluation version. Select OK .Figure 31. Starting DebuggingClose the disassembly window. Go to the ADCMeter.c file. Set a breakpoint on the instruction UARTInit(B9600). This is done by right-clicking on the line of code and then selecting insert/ remove breakpointor by double-clicking on the left of theinstruction. Notice that the breakpoint is indicated by a large red dot to the left of the line in Figure 32.Figure 32. ADCMeter.c FilePress the run code button twice. The program measures the input signal applied across AIN0 and AIN1, converts this to a voltage, and sends this information in an ASCII string to the UART – baud rate 9600-8-N-1. To stop the code from running, press .To stop debugging, press.10952-03610952-03710952-038DR A F TGetting Started GuideADuCM360/ADuCM361IAR EMBEDDED WORKBENCH IDEThe IAR Embedded Workbench IDE integrates all the tools necessary to edit, assemble, and debug code. The ADuCM360 development system supports nonintrusive emulation limited to 32 kB code. This section describes the project setup steps in order to download and debug code on an ADuCM360 evaluation system. Analog Devices recommends using the J-Link debugger driver.STARTING IAR EMBEDDED WORKBENCHFrom the Start menu, choose All Programs> IAR Systems> IAR Embedded Workbench for ARM 6.40 KickStart> IAR Embedded Workbench . This loads the Embedded Workbench IDE.QUICK START STEPSFollow the steps in this section to get up and running with the example code provided with the evaluation software. These steps use the default driver and compiler settings. 1. To open the prepared IAR example projects using theEmbedded Workbench tools, select File>Open> Workspace . Open the file ADuCM360.eww in the directory \ADuCM360V1.0\Code\examples .Figure 33. IAR Embedded Workbench2. After a few seconds, the workspace opens and theindividual projects are launched as shown in Figure 34.Figure 34. Individual Projects3. To change the selected project, select the required projectfrom the drop-down list.Figure 35. Changing Selected ProjectsIf, for example, the Blink project is chosen, this toggles the LED connected to P1.3 on the EV AL-ADUCM360MKZ board.4. To compile all files, select Project>Rebuild all files.10952-03910952-04010952-041DR A F TGetting Started GuideADuCM360/ADuCM361Figure 36. Compiling All Files5. If the build is successful, the information is displayed in theBuild details window.Figure 37. Build Details6. To program the device and to begin debugging the sourcecode, select Project>Download and Debug .Figure 38. Begin DebuggingThis launches the debugger.Figure 39. Debugger7. To begin code execution, select the Go icon, .Y ou should now see the LED toggle on your EV AL-ADUCM360MKZ board.10952-04210952-04310952-04410952-045DR A F TGetting Started GuideADuCM360/ADuCM361ELVESUSING ELVES.EXE WITH µVISION4Elves is a useful tool for generating simple C function libraries to get you started on evaluating any peripheral. All the user needs to do is choose the required parameters for each function and Elves generate the C source code that configures all the appropriate ADuCM360 registers.1. In the folder, C:\ADuCM360V1.0\Software Tools\Elves ,open the file Elves.exe to launch Elves.Figure 40. Launching Elves2. To add a library, click Add and go to the directoryC:\ADuCM360V1.0\Code\common .A list of header files is available. Add the header file(s) that you wish to use.Figure 41. Select Source LibraryFor example, if the AdcLib.h library is added, the user can generate functions to control the ADC.Figure 42. List of FunctionsTake, for example, the function AdcBias , in the Choose Parameters section at the bottom of Figure 42. The user configures the parameters to meet their needs and each parameter is explained in the Source Code section of the window shown in Figure 43.Figure 43. Source Code3. Once satisfied with the register settings, select Copy andthen paste this function into your source code in Keil or IAR as shown in Figure 44.Figure 44. Copying and Pasting Source Code4. Before using the Help option, click Setup and point to thefollowing file \folder: C:\ADuCM360V1.0\Software Tools\Elves\help docs\Docs\Start_P .html .10952-04610952-04710952-04810952-04910952-050DR A F TGetting Started GuideADuCM360/ADuCM361WINDOWS SERIAL DOWNLOADERThe Windows Serial Downloader for Cortex-M3 based parts (CM3WSD) is a windows software program that allows a user to serially download Intel Extended Hex files as created by assembler/compilers to the ADuCM360 via the serial port. The Intel Extended Hex file is downloaded into the on-chip Flash/EE program memory via a selected PC serial port (COM1 to COM31).PREPARING FOR DOWNLOAD1. Connect the ADuCM360 mini-board (EV AL-ADUCM360MKZ) to the interface board (USB-SWD/UART).2. Connect the interface board (USB-SWD/UART) to the PCusing a USB cable.3. Ensure all the links are inserted on both boards.4. Place the ADuCM360 into serial download mode using thefollowing sequence: • Pull P2.2 low.• Pull the RESET pin low and then high (float). • P2.2 can be left floating once RESET is high.Figure 45. Preparing for DownloadDOWNLOADING USING CM3WSD1. In the software tools \CM3WSD folder, open the fileCM3WSD.exe .2. Select the file at C:\ADuCM360V1.0\Code\examples\Adc\AdcExample.hex .3. Select Configure .4. In the Parts tab, select ADuCM360.5. In the Comms tab, select the correct COM port and a baudrate of 38400. Select OK .6. Select Start . The CM3WSD sends a reset command to theADuCM360. If the ADuCM360 is in serial download mode, and the COM port between the PC and the mini-board are setup correctly, then the CM3WSD should start downloading the hex file and display a progress bar while the file is downloading. Once the file has been successfully downloaded, the monitor status box will be updated with Flashing Complete Click Reset to run program .Figure 46. Downloading Using CM3WSDRUNNING THE DOWNLOADED FILERunning Using the CM3WSDSelect Reset with P2.2 floating or pulled high. The monitor status box updates with the message: Running .Manual Run OptionPull RESET low, then high (or float) on the mini-board (EV AL-ADUCM360MKZ) to reset the ADuCM360, with P2.2 floating or pulled high. The program starts running automatically.10952-05110952-052DR A F TADuCM360/ADuCM361Getting Started GuideNOTESI 2C refers to a communications protocol originally developed by Philips Semiconductors (now NXP Semiconductors).ESD CautionESD (electrostatic discharge) sensitive device . Charged devices and circuit boards can discharge without detection. Although this product features patented or proprietary protection circuitry, damage may occur on devices subjected to high energy ESD. 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