4mm方形红色光敏二极管PD402R

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常用开关二极管型号及主要参数

常用开关二极管型号及主要参数开关二极管是一种具有特殊结构的二极管，其主要作用是实现电路开关控制功能。

在数字电子、通信、电源管理等领域都广泛应用。

以下将对常用的几种开关二极管型号及其主要参数进行介绍。

1.1N4148开关二极管-最大反向电压：100V-最大正向电流：200mA-最大功耗：500mW- 开关时间：4ns1N4148是一种常见的开关二极管，具有快速开关、低反向电流、高正向导通能力等特点。

广泛应用于数字逻辑门、开关电路以及高频信号放大电路中。

2.1N4007开关二极管-最大反向电压：1000V-最大正向电流：1A-最大功耗：3W-开关时间：<50μs1N4007是一种经典的开关二极管，主要用于低频交流电源整流和保护电路，具有高耐压、大电流特点，适用于一般电源电路。

3.1N5822开关二极管-最大反向电压：40V-最大正向电流：3A-最大功耗：2.5W- 开关时间：20ns1N5822是一种快恢复型开关二极管，具有快速恢复时间和低导通损耗的特点。

常用于开关电源和充电电路中，以提高电路的稳定性和效率。

4.2N3904开关二极管-最大反向电压：40V-最大正向电流：200mA-最大功耗：625mW- 开关时间：20ns2N3904是一种常见的NPN型开关二极管，适用于低功耗开关电路和放大电路。

具有高动态特性、低饱和电压和低输入电容等特点。

5.PN2222开关二极管-最大反向电压：40V-最大正向电流：600mA-最大功耗：500mW- 开关时间：25nsPN2222是一种广泛应用的PNP型开关二极管，常用于电源管理、接口驱动、瞬态抑制等电路。

具有较高的集电极电流和较低的饱和电压。

以上是几种常见的开关二极管型号及其主要参数。

在实际应用中，选择合适的开关二极管要综合考虑最大反向电压、最大正向电流、功耗和开关时间等参数，并根据具体应用需求进行合适选择。

IR公司_大功率MOS管选型

I DContinuous Drain Current(A)70°Micro3Surface Mount PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPartNumberPD Max.PowerDissipation (W)N-ChannelLogic LevelIRLML2402*912570.54200.25 1.20.95230H1IRLML2803912580.54300.251.20.93230P-ChannelLogic LevelIRLML6302*912590.54-200.6-0.62-4.8230H1IRLML5103912600.54-300.6-0.61-4.8230* Indicates low VGS(th), which can operate at VGS = 2.7VMeasured at ambient for Micro3, Micro6, Micro8, SO-8, and SOT-223 package styles. All others measured at case.1Micro3SO-8D-PakD -PakSOT-227Micro6SOT-223Micro82 Illustrations not to scaleI DContinuous Drain Current(A)70°Micro6Surface Mount PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPartNumberPD Max.PowerDissipation (W)N-ChannelLogic LevelIRLMS1902915401.7200.10 3.2 2.675H2IRLMS1503915081.7300.103.22.675P-ChannelLogic LevelIRLMS6702*914141.7-200.20-2.3-1.975H2IRLMS5703914131.7-300.20-2.3-1.975* Indicates low VGS(th), which can operate at VGS = 2.7VMeasured at ambient for Micro3, Micro6, Micro8, SO-8, and SOT-223 package styles. All others measured at case.1Micro3SO-8D-PakD -PakSOT-227Micro6SOT-223Micro82 Illustrations not to scaleI DContinuous Drain Current(A)70°Micro8Surface Mount PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart NumberP D Max.PowerDissipation (W)N-Channel Logic LevelIRF7601* 912611.820 0.035 5.7 4.6 70 H3IRF7603 912621.830 0.035 5.6 4.5 70Dual N-Channel Logic LevelIRF7501* 912651.220 0.135 2.4 1.9 100 H3IRF7503 912661.2530 0.135 2.4 1.9 100P-Channel Logic LevelIRF7604* 912631.8-20 0.09 -3.6 -2.9 70 H3IRF7606 912641.8-30 0.09 -3.6 -2.9 70Dual P-Channel Logic LevelIRF7504* 912671.25-20 0.27 -1.7 -1.4 100 H3IRF7506 912681.25-30 0.27 -1.7 -1.4 100Dual N- and P-Channel Logic LevelIRF7507* 912691.2520 0.1352.4 1.9 100 H3-20 0.27 -1.7 -1.4IRF7509 912701.2530 0.135 2.4 1.9 100-30 0.27 -1.7 -1.4* Indicates low VGS(th), which can operate at VGS = 2.7VMeasured at ambient for Micro3, Micro6, Micro8, SO-8, and SOT-223 package styles. All others measured at case.1Micro3SO-8D-Pak D -PakSOT-227Micro6SOT-223Micro8 2 Illustrations not to scaleI DContinuous Drain Current(A)70°SO-8Surface Mount PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart Number P D Max.PowerDissipation (W)N-ChannelIRF7413913302.5300.011139.250H4IRF7413A 916132.5300.0135128.450IRF9410915622.5300.0375.850Dual N-ChannelIRF7311914352.0200.029 6.6 5.362.5H4IRF7313914802.0300.029 6.5 5.262.5IRF7333917002.0300.10 3.5 2.862.5917002.0300.050 4.9 3.962.5IRF9956915592.0300.103.52.862.5Dual P-ChannelIRF7314914352.0-200.058-5.3-4.362.5H4IRF7316915052.0-300.058-4.9-3.962.5IRF9953915602.0-300.25-2.3-1.862.5* Indicates low VGS(th), which can operate at VGS = 2.7VMeasured at ambient for Micro3, Micro6, Micro8, SO-8, and SOT-223 package styles. All others measured at case.1Micro3SO-8D-PakD -PakSOT-227Micro6SOT-223Micro82 Illustrations not to scaleI DContinuous Drain Current(A)70°SO-8Surface Mount PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)RΘMax.ThermalResistance(°C/W)1FaxonDemand Number Case Outline KeyPart NumberP D Max.PowerDissipation (W)Dual N- and P-ChannelIRF7317 915682.020 0.029 6.6 5.3 62.5 H42.0-20 0.058 -5.3 -4.3 62.5IRF9952 915622.030 0.103.5 2.8 62.5915622.0-30 0.25 -2.3 -1.8 62.5IRF7319 916062.030 0.029 6.5 5.2 62.52.0-30 0.058 -4.9 -3.9 62.5* Indicates low VGS(th), which can operate at VGS = 2.7VMeasured at ambient for Micro3, Micro6, Micro8, SO-8, and SOT-223 package styles. All others measured at case.1Micro3SO-8D-Pak D -PakSOT-227Micro6SOT-223Micro8 2 Illustrations not to scaleI DContinuous Drain Current(A)70°SO-8Surface Mount PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart Number P D Max.PowerDissipation (W)N-ChannelLogic LevelIRF7401912442.5200.0228.77.050H4IRF7201911002.5300.0307.0 5.650IRF7403912452.5300.0228.55.450Dual N-ChannelLogic LevelIRF7101908712.0200.10 3.5 2.362.5H4IRF7301912382.0200.050 5.2 4.162.5IRF7303912392.0300.050 4.9 3.962.5IRF7103910952.0500.1303.02.362.5P-ChannelLogic LevelIRF7204911032.5-200.060-5.3-4.250H4IRF7404912462.5-200.040-6.7-5.450IRF7205911042.5-300.070-4.6-3.750IRF7406912472.5-300.045-5.8-3.750IRF7416913562.5-300.02-10-7.150* Indicates low VGS(th), which can operate at VGS = 2.7VMeasured at ambient for Micro3, Micro6, Micro8, SO-8, and SOT-223 package styles. All others measured at case.1Micro3SO-8D-PakD -PakSOT-227Micro6SOT-223Micro82 Illustrations not to scaleI DContinuous Drain Current(A)70°SO-8Surface Mount PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart Number P D Max.PowerDissipation (W)Dual P-ChannelLogic LevelIRF7104910962.0-200.250-2.3-1.862.5H4IRF7304912402.0-200.090-4.3-3.462.5IRF7306912412.0-300.10-3.6-2.962.5Dual N- and P-Channe Logic LevelIRF7307912421.4200.050 4.3 3.490H4-200.090-3.6-2.9IRF7105910972.0250.1093.5 2.862.52-250.25-2.3-1.862IRF7309912432.0300.050 4.9 3.962.5-300.10-3.6-2.9* Indicates low VGS(th), which can operate at VGS = 2.7VMeasured at ambient for Micro3, Micro6, Micro8, SO-8, and SOT-223 package styles. All others measured at case.1Micro3SO-8D-PakD -PakSOT-227Micro6SOT-223Micro82 Illustrations not to scaleI DContinuous Drain Current(A)70°SOT-223Surface Mount PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart Number P D Max.PowerDissipation (W)N-ChannelIRFL4105913812.1550.045 3.7 3.060H6IRFL110908612.01000.54 1.50.9660IRFL4310913682.11000.20 1.6 1.360IRFL21090868 2.02001.50.960.660IRFL214908622.02502.00.790.560P-ChannelIRFL9110908642.0-1001.2-1.1-0.6960H6N-ChannelLogic LevelIRLL3303913792.1300.031 4.6 3.760H6IRLL014N 914992.1550.14 2.0 1.660IRLL2705913802.1550.043.83.060* Indicates low VGS(th), which can operate at VGS = 2.7VMeasured at ambient for Micro3, Micro6, Micro8, SO-8, and SOT-223 package styles. All others measured at case.1Micro3SO-8D-PakD -PakSOT-227Micro6SOT-223Micro82 Illustrations not to scaleI DContinuous Drain Current(A)100°D-PakSurface Mount PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart Number P D Max.PowerDissipation (W)N-ChannelIRFR33039164257300.0313321 2.2H7IRFR024N9133638550.0751610 3.3IRFR41059130248550.0452516 2.7IRFR12059131869550.0273723 1.8IRFR11090524251000.54 4.3 2.75IRFR120N 91365391000.219.1 5.8 3.2IRFR391091364521000.11159.5 2.4IRFR2109052625200 1.5 2.6 1.75IRFR22090525422000.8 4.833IRFR21490703252502 2.2 1.45IRFR2249060042250 1.1 3.8 2.43IRFR3109059725400 3.6 1.7 1.15IRFR3209059842400 1.8 3.123IRFR42090599425003 2.4 1.53IRFRC2090637426004.421.33* Indicates low VGS(th), which can operate at VGS = 2.7VMeasured at ambient for Micro3, Micro6, Micro8, SO-8, and SOT-223 package styles. All others measured at case.1Micro3SO-8D-PakD -PakSOT-227Micro6SOT-223Micro82 Illustrations not to scaleI DContinuous Drain Current(A)100°D-PakSurface Mount PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart Number P D Max.PowerDissipation (W)P-ChannelIRFR55059161057-550.11-18-11 2.2H7IRFR53059140289-550.065-28-18 1.4IRFR90149065425-600.5-5.1-3.25IRFR90249065542-600.28-8.8-5.63IRFR91109051925-100 1.2-3.1-25IRFR91209052042-1000.6-5.6-3.63IRFR9120N 9150739-1000.48-6.5-4.1 3.2IRFR92109052125-2003-1.9-1.25IRFR92209052242-200 1.5-3.6-2.33IRFR92149165850-250 3.0-2.7-1.7 2.5IRFR93109166350-4007.0-1.8-1.12.5* Indicates low VGS(th), which can operate at VGS = 2.7VMeasured at ambient for Micro3, Micro6, Micro8, SO-8, and SOT-223 package styles. All others measured at case.1Micro3SO-8D-PakD -PakSOT-227Micro6SOT-223Micro82 Illustrations not to scaleI DContinuous Drain Current(A)100°D-PakSurface Mount PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart Number P D Max.PowerDissipation (W)N-ChannelLogic LevelIRLR27039133538300.0452214 3.3H7IRLR33039131657300.0313321 2.2IRLR31039133369300.0194629 1.8IRLR024N 9136338550.0651711 3.3IRLR27059131746550.042415 2.7IRLR29059133469550.0273623 1.8IRLR120N 91541391000.18511 6.9 3.2IRLR341091607521000.10159.52.4* Indicates low VGS(th), which can operate at VGS = 2.7VMeasured at ambient for Micro3, Micro6, Micro8, SO-8, and SOT-223 package styles. All others measured at case.1Micro3SO-8D-PakD -PakSOT-227Micro6SOT-223Micro82 Illustrations not to scaleI DContinuous Drain Current(A)100°D 2PakSurface Mount PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart NumberP D Max.PowerDissipation (W)N-ChannelIRFZ24NS 913554555 0.07 17 12 3.3 H10IRFZ34NS 913116855 0.04 29 20 2.2IRFZ44NS 9131511055 0.022 49 35 1.4IRFZ46NS 9130512055 0.020 53 37 1.3IRFZ48NS 9140814055 0.016 64 45 1.1IRF1010NS 913723.855 0.011 84 60 40IRF3205S 9130420055 0.008 110 80 0.75IRFZ44ES 9171411060 0.023 48 34 1.4IRF1010ES 9172017060 0.012 83 59 0.90IRF2807S 9151815075 0.013 71 50 1.0IRF520NS 9134047100 0.2 9.5 6.7 3.2IRF530NS 9135263100 0.11 15 11 2.4IRF540NS 91342110100 0.052 27 19 1.6IRF1310NS 91514120100 0.036 36 25 1.3IRF3710S 91310150100 0.028 46 33 1.0IRF3315S 9161794150 0.082 21 15 1.6IRF3415S 91509150150 0.042 37 26 1.0IRFBC20S 9.101450600 4.4 2.2 1.4 2.5IRFBC30S 9101574600 2.2 3.6 2.3 1.7IRFBC40S 91016130600 1.2 6.2 3.9 1.0* Indicates low VGS(th), which can operate at VGS = 2.7VMeasured at ambient for Micro3, Micro6, Micro8, SO-8, and SOT-223 package styles. All others measured at case.1Micro3SO-8D-Pak D -PakSOT-227Micro6SOT-223Micro8 2 Illustrations not to scaleI DContinuous Drain Current(A)100°D 2PakSurface Mount PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemandNumberCase Outline KeyPart NumberP D Max.PowerDissipation (W)IRFBF20S 9166554900 8.0 1.7 1.1 2.3 H10P-ChannelIRF5305S 91386110-55 0.06 -31 -22 1.4 H10IRF4905S 914783.8-55 0.02 -74 -52 40IRF9520NS 9152247-100 0.48 -6.7 -4.8 3.2IRF9530NS 9152375-100 0.20 -14 -9.9 2.0IRF9540NS 9148394-100 0.117 -19 -13 1.6IRF5210S 91405150-100 0.06 -35 -25 1.0* Indicates low VGS(th), which can operate at VGS = 2.7VMeasured at ambient for Micro3, Micro6, Micro8, SO-8, and SOT-223 package styles. All others measured at case.1Micro3SO-8D-Pak D -PakSOT-227Micro6SOT-223Micro8 2 Illustrations not to scaleI DContinuous Drain Current(A)100°D 2PakSurface Mount PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart NumberP D Max.PowerDissipation (W)N-Channel Logic LevelIRL3302S 916925720 0.020 39 25 2.2 H10IRL3202S916756920 0.016 48 30 1.8IRL3102S 916918920 0.013 61 39 1.4IRL3402S 9169311020 0.01 85 54 1.1IRL3502S 9167614020 0.007 110 67 0.89IRL2703S 913604530 0.04 24 17 3.3IRL3303S 913236830 0.026 38 27 2.2IRL3103S 9133811030 0.014 64 45 1.4IRL2203NS 9136717030 0.007 116 82 0.90IRL3803S 9131920030 0.006 140 98 0.75IRLZ24NS 913584555 0.06 18 13 3.3IRLZ34NS 913086855 0.035 30 21 2.2IRLZ44NS 9134711055 0.022 47 33 1.4IRL3705NS 9150217055 0.01 89 63 0.90IRL2505S 9132620055 0.008 104 74 0.75IRLZ44S 9090615060 0.028 50 36 1.0IRL530NS 9134963100 0.1 15 11 2.4IRL2910S 91376150100 0.026 48 34 1.0* Indicates low VGS(th), which can operate at VGS = 2.7VMeasured at ambient for Micro3, Micro6, Micro8, SO-8, and SOT-223 package styles. All others measured at case.1Micro3SO-8D-Pak D -PakSOT-227Micro6SOT-223Micro8 2 Illustrations not to scaleI DContinuous Drain Current(A)100°SOT-227Surface Mount PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous DrainCurrent 25°C(A)RΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart Number P D Max.PowerDissipation (W)N-ChannelFully Isolated Low ChargeFA38SA50LC 916155005000.1338240.25H21FA57SA50LC916506255000.0857360.20* Indicates low VGS(th), which can operate at VGS = 2.7VMeasured at ambient for Micro3, Micro6, Micro8, SO-8, and SOT-223 package styles. All others measured at case.1Micro3SO-8D-PakD -PakSOT-227Micro6SOT-223Micro82 Illustrations not to scaleI DContinuous Drain Current(A)100°I-PakThrough-Hole PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart Number P D Max.PowerDissipation (W)N-ChannelIRFU33039164257300.0313321 2.2H8IRFU024N 9133638550.0751610 3.3IRFU41059130248550.0452519 2.7IRFU12059131869550.0273723 1.8IRFU11090524251000.54 4.3 2.7 5.0IRFU120N 91365391000.219.1 5.8 3.2IRFU391091364521000.11159.5 2.4IRFU2109052625200 1.5 2.6 1.7 5.0IRFU22090525422000.80 4.8 3.0 3.0IRFU2149070325250 2.0 2.2 1.4 5.0IRFU2249060042250 1.1 3.8 2.4 3.0IRFU3109059725400 3.6 1.7 1.1 5.0IRFU3209059842400 1.8 3.1 2.0 3.0IRFU4209059942500 3.0 2.4 1.5 3.0IRFUC2090637426004.42.01.33.0I-PakTO-220 FullPakTO-262TO-247HEXDIPTO-220AB Illustrations not to scale** Not ratedI DContinuous Drain Current(A)100°I-PakThrough-Hole PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart Number P D Max.PowerDissipation (W)P-ChannelIRFU55059161057-550.11-18-11 2.2H8IRFU53059140289-550.065-28-18 1.4IRFU90149065425-600.50-5.1-3.2 5.0IRFU90249065542-600.28-8.8-5.6 3.0IRFU91109051925-100 1.2-3.1-2.0 5.0IRFU91209052042-1000.60-5.6-3.6 3.0IRFU9120N 9150739-1000.48-6.5-4.1 3.2IRFU92109052125-200 3.0-1.9-1.2 5.0IRFU92209052242-200 1.5-3.6-2.3 3.0IRFU92149165850-2503.0-2.7-1.7 2.5IRFU93109166350-4007.0-1.8-1.12.5N-ChannelLogic LevelIRLU27039133538300.0452214 3.3H8IRLU33039131657300.0313321 2.2IRLU31039133369300.0194629 1.8IRLU024N 9136338550.0651711 3.3IRLU27059131746550.04241715IRLU29059133469550.0273623 1.8IRLU120N 91541391000.18511 6.9 3.2IRLU341091607521000.10159.52.4I-PakTO-220 FullPakTO-262TO-247HEXDIPTO-220AB Illustrations not to scale** Not ratedI DContinuous Drain Current(A)100°HEXDIPThrough-Hole PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart Number P D Max.PowerDissipation (W)N-ChannelIRFD014907001.3600.2 1.7 1.2120H9IRFD024906991.3600.1 2.5 1.8120IRFD110903281.31000.54 1.00.71120IRFD120903851.31000.27 1.30.94120IRFD210903861.3200 1.50.60.38120IRFD220904171.32000.80.80.50120IRFD214912711.3250 2.00.570.32120IRFD224912721.3250 1.10.760.43120IRFD310912251.3400 3.60.420.23120IRFD320912261.3400 1.80.600.33120IRFD420912271.3500 3.00.460.26120IRFDC20912281.36004.40.320.21120I-PakTO-220 FullPakTO-262TO-247HEXDIPTO-220AB Illustrations not to scale** Not ratedI D Continuous Drain Current (A)100°TO-220Qg TotalGate Charge(nC)Through-Hole PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C (A)R ΘMax.Thermal Resistance(°C/W)1Faxon Demand Number Case OutlineKeyPart Number P D Max.Power Dissipation (W)N-ChannelLow ChargeIRF737LC91314743000.75 6.1** 1.7 3.9H11IRF740LC 910681254000.5510** 1.039IRF840LC 910691255000.858.0** 1.039IRFBC40LC910701256001.26.2**1.039I-PakTO-220 FullPakTO-262TO-247HEXDIPTO-220AB Illustrations not to scale** Not ratedI DContinuous Drain Current(A)100°TO-220ABThrough-Hole PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart Number P D Max.PowerDissipation (W)N-ChannelIRFZ24N 9135445550.071712 3.3H12IRFZ34N9127656550.042618 2.7IRFZ44N 9130383550.0244129 1.8IRFZ46N 9127788550.024633 1.7IRFZ48N 9140694550.0165337 1.6IRF1010N 91278130550.0127251 1.2IRF320591279150550.0089869 1.0IRFZ34E 9167268600.0422820 2.2IRFZ44E 91671110600.0234834 1.4IRF1010E 91670170600.01281570.90IRF280791517150750.0137150 1.0IRF520N 91339471000.209.5 6.79.5IRF530N 91351601000.111511 2.4IRF540N 91341941000.0522719 1.6IRF1310N 916111201000.0363625 1.3IRF3710913091501000.0284633 1.0IRF331591623941500.0822115 1.6IRF3415914771501500.0423726 1.0IRFBC209062350600 4.4 2.2 1.4 2.5IRFBC309048274600 2.2 3.6 2.3 1.7IRFBC4090506125600 1.2 6.2 3.9 1.0IRFBE2090610548006.51.81.22.3I-PakTO-220 FullPakTO-262TO-247HEXDIPTO-220AB Illustrations not to scale** Not ratedI DContinuous Drain Current(A)100°TO-220ABThrough-Hole PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart Number P D Max.PowerDissipation (W)IRFBE3090613125800 3.0 4.1 2.6 2.0H12IRFBF3090616125900 3.7 3.6 2.3 1.0IRFBG209060454100011 1.40.86 2.3IRFBG309062012510005.03.12.01.0P-ChannelIRF9Z24N 9148445-550.175-12-8.53.3H12IRF9Z34N 9148556-550.10-17-12 2.7IRF530591385110-550.06-31-22 1.4IRF490591280150-550.02-64-45 1.0IRF9530N 9148275-1000.20-13-9.2 2.0IRF9540N 9143794-1000.117-19-13 1.6IRF521091434150-1000.06-35-25 1.0IRF62159147983-1500.29-11-7.81.8I-PakTO-220 FullPakTO-262TO-247HEXDIPTO-220AB Illustrations not to scale** Not ratedI DContinuous Drain Current(A)100°TO-220ABThrough-Hole PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart NumberP D Max.PowerDissipation (W)N-Channel Logic LevelIRL3302 916965720 0.020 39 25 2.2 H12IRL3202 916956920 0.016 48 30 1.8IRL3102 916948920 0.013 61 39 1.4IRL3402 9169711020 0.01 85 54 1.1IRL3502 9169814020 0.007 110 67 0.89IRL2703 913594530 0.04 24 17 3.3IRL3303 913225630 0.026 34 24 2.7IRL3103 913378330 0.014 56 40 1.8IRL2203N 9136613030 0.007 100 71 1.230 0.007 61 43 3.2IRL3803 9130115030 0.006 120 83 1.0IRLZ24N 913574555 0.06 18 13 3.3IRLZ34N 913075655 0.035 27 19 2.7IRLZ44N 913468355 0.022 41 29 1.8IRL3705N 9137013055 0.01 77 54 1.2IRL2505 9132520055 0.008 104 74 0.75IRL520N 9149447100 0.18 10 7.1 3.2IRL530N 9134863100 0.10 15 11 2.4IRL540N 9149594100 0.044 30 21 1.6IRL2910 91375150100 0.026 48 34 1.0I-PakTO-220 FullPakTO-262TO-247HEXDIPTO-220AB Illustrations not to scale** Not ratedI D Continuous Drain Current (A)100°TO-220 FullPak (Fully Isolated)Qg TotalGate Charge(nC)Through-Hole PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous DrainCurrent 25°C(A)R ΘMax.Thermal Resistance (°C/W)1Fax on Demand Number Case OutlineKeyPart Number P D Max.Power Dissipation (W)N-ChannelLow ChargeIRFI740GLC91209404000.55 6.0** 3.139H13IRFI840GLC 91208405000.85 4.8** 3.139IRFIBC40GLC91211406001.24.0**3.139I-PakTO-220 FullPakTO-262TO-247HEXDIPTO-220AB Illustrations not to scale** Not ratedI DContinuous Drain Current(A)100°TO-220 FullPak (Fully Isolated)Through-Hole PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart Number P D Max.PowerDissipation (W)N-ChannelIRFIZ24N 9150126550.07139.2 5.8H14IRFIZ34N9148931550.041913 4.8IRFIZ44N 9140338550.02428200.024IRFIZ46N 9130640550.023122 3.8IRFIZ48N 9140742550.0163625 3.6IRFI1010N 9137347550.0124431 3.2IRFI32059137448550.0085640 3.1IRFIZ24E 9167329600.071149.6 5.2IRFIZ34E 9167437600.0422115 4.1IRFI510G 90829271000.54 4.5 3.2 5.5IRFI520N 91362271000.207.2 5.1 5.5IRFI530N 91353331000.11117.8 4.5IRFI540N 91361421000.0521813 3.6IRFI1310N 91611451000.0362216 3.3IRFI371091387481000.0252820 3.1IRFI620G 90832302000.8 4.1 2.6 4.1IRFI630G 90652322000.4 5.9 3.7 3.6IRFI640G 90649402000.189.8 6.2 3.1IRFI614G 9083123250 2.0 2.1 1.3 5.5IRFI624G 9083330250 1.1 3.4 2.2 4.1IRFI634G 90738322500.45 5.6 3.5 3.6IRFI644G 90739402500.287.953.1I-PakTO-220 FullPakTO-262TO-247HEXDIPTO-220AB Illustrations not to scale** Not ratedI DContinuous Drain Current(A)100°TO-220 FullPak (Fully Isolated)Through-Hole PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart Number P D Max.PowerDissipation (W)IRFI720G 9083430400 1.8 2.6 1.7 4.1H14IRFI730G 9065032400 1.0 3.7 2.3 3.6IRFI740G 90651404000.55 5.4 3.4 3.1IRFI734G 9100135450 1.2 3.4 2.1 3.6IRFI744G 91002404500.63 4.9 3.1 3.1IRFI820G 9064130500 3.0 2.1 1.3 4.1IRFI830G 9064632500 1.5 3.12 3.6IRFI840G 90642405000.85 4.6 2.9 3.1IRFIBC20G 90850306004.41.71.1 4.1IRFIBC30G 90851356002.2 2.5 1.63.6IRFIBC40G 9085240600 1.2 3.5 2.2 3.1IRFIBE20G 9085330800 6.5 1.4.86 4.1IRFIBE30G 9085435800 3.0 2.1 1.4 3.6IRFIBF20G 90855309008.0 1.2.79 4.1IRFIBF30G90856359003.71.91.23.6P-ChannelIRFI9Z24N 9152929-550.175-9.5-6.7 5.2H14IRFI9Z34N 9153037-550.10-14-10 4.1IRFI49059152663-550.02-41-29 2.4IRFI9540G 9083742-1000.117-13-9.2 3.6IRFI9540N 9148742-1000.117-13-9.2 3.6IRFI52109140448-1000.06-20-14 3.1IRFI9634G 9148835-2501.0-4.1-2.63.6I-PakTO-220 FullPakTO-262TO-247HEXDIPTO-220AB Illustrations not to scale** Not ratedI DContinuous Drain Current(A)100°TO-220 FullPak (Fully Isolated)Through-Hole PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart Number P D Max.PowerDissipation (W)N-ChannelLogic LevelIRLI2203N 9137847300.0076143 3.2H14IRLI38039132048300.0066747 3.1IRLIZ24N 9134426550.06149.9 5.8IRLIZ34N 9132931550.0352014 4.8IRLIZ44N 9149838550.0222820 4.0IRLI3705N 9136947550.014733 3.2IRLI25059132763550.00858412.4IRLI520N 91496271000.187.7 5.4 5.5IRLI530N 91350331000.10117.8 4.5IRLI540N 91497421000.04420143.6IRLI291091384481000.02627193.1P-ChannelLogic LevelIRFI9520G 9083537-1000.6-5.2-3.6 4.1H14IRFI9530G 9083638-1000.03-7.7-5.4 3.6IRFI9620G 9087430-200 1.5-3.0-1.9 4.1IRFI9630G 9083840-2000.8-4.3-2.7 3.6IRFI9640G9083940-2000.5-6.1-3.93.1I-PakTO-220 FullPakTO-262TO-247HEXDIPTO-220AB Illustrations not to scale** Not ratedI D Continuous Drain Current (A)100°TO-247Qg TotalGate Charge(nC)Through-Hole PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C (A)R ΘMax.Thermal Resistance (°C/W)1Fax on Demand Number Case OutlineKeyPart Number P D Max.Power Dissipation (W)1N-ChannelLow ChargeIRFP350LC912291904000.3018**0.6570H16IRFP360LC 912302804000.2023**0.4598IRFP450LC 912311905000.4016**0.6570IRFP460LC 912322805000.2720**0.4598IRFPC50LC 912331906000.6013**0.6570IRFPC60LC912342806000.4016**0.4598I-PakTO-220 FullPakTO-262TO-247HEXDIPTO-220AB Illustrations not to scale** Not rated。

夏普光耦选型手册

4脚 DIP
PC815XNNSZ0F*5, *6 复合光晶 PC81510NSZ0X 体管 5, 6 输 PC852XNNSZ0F* * 出 PC853XNNSZ0F*5, *6
*1 *2 *3 *4 *5 *6 *7 *8 *9
–
–
50
5.0
35
600
1
60
100
⅜ ⅜ ⅜
– ⅜ ⅜
–
10
页码 40 40 40 40 40 40 41 41 41 41 41 41 41 42 42 42 42 42 42 43 43
<OPIC 输出型>
封装类型输出类型特点型号（系列） PC400J00000F／PC456L0NIP0F／ PC410S0NIP0F ／PC410L0NIP0F ／ PC4D10SNIP0F PC457S0NIP0F ／PC457L0NIP0F 页码
PC714V0NSZXF PC724V0NSZXF
高绝缘电压高绝缘电压，大输入电流高绝缘电压，带基底端子高绝缘电压，高灵敏度高绝缘电压，高灵敏度, 高集电极发射极电压，大功率
PC3HU7xYIP0B
PC3H2J00000F （小扁平型4脚）
注意：未经元器件规格说明书确认，便在设备中使用产品目录、数据手册等所刊载的任何夏普元器件，由此引起的故障或损害，夏普公司将不负任何责任。除非特别说明，本页所列的型号均符合 RoHS （有害物质限制）标准* 。详情请与夏普公司联系。 *RoHS （有害物质限制）标准：禁止使用铅、镉、六价铬、汞和特定溴系阻燃剂（PBB 和 PBDE），除特别情况外。因此，在使用任何夏普元器件之前，务请与夏普公司联系以获取最新的元器件规格说明书。

红色发光二极管

符号
测试条件
最小值典型值最大值单位
PARAMETER SYMBOL TEST CONDITION
MIN TYP MAX UNIT
正向电压
Forward Voltage 反向电流
Reverse Current 发光强度
Luminous Intensity 峰值波长
Peak Wave Length 光谱半宽度
Spectral Line Half Width
VF IR IV λP △λ
IF＝10mA VR＝5V IF＝10mA IF＝10mA IF＝10mA
－ 2.1 2.5 V －－ 10 μA 2.0 －－ mcd － 700 － nm － 100 － nm
2002 年 6 月
第 2 页共7页
PDF 文件使用 "pdfFactory Pro" 试用版本创建
厦门华联电子
RED BRIGHT LED SPECIFICATION HFR205P
8．建议使用方式 Suggested way of usage.
LED 使用时必须串联一个保护电阻，正向直流电流为 20mA 左右。
When using LED, it must use a protective resistor in series with DC current about 20 mA.
厦门华联电子
RED BRIGHT LED SPECIFICATION
HFR205P
4、外形尺寸（DIMENSION）
1. 正极 Anode 2. 负极 Cathode
2002 年 6 月
第 3 页共7页
PDF 文件使用 "pdfFactory Pro" 试用版本创建

PD204_6B光敏二极管产品说明书

产品说明书3mm光敏二极管:PD204_6B ⏹特点․快速响应․高感光灵敏度․较小的结电容․无铅环保，符合RoHS标准⏹描述PD204_6B是一款高速高灵敏度的插脚式光敏二极管，采用3mm圆头感光结构，用环氧材料封装，黑色封装材料可对可见光进行有效滤除，对红外光均保持很高的感光灵敏度。

⏹应用․高速光学传感器․安防设备․照相、摄影设备․光电开关⏹封装尺寸1.正极2.负极注: 1. 所有尺寸单位为毫米(英寸)2. 未说明误差的尺寸为±0.25mm(0.01英寸)⏹极限参数(Ta=25℃)参数符号参数值单位反向电压VR30V耗散功率Pd150mW焊接温度Tsol260℃工作温度Topr-25~+85℃存储温度Tstg-40~+85℃Ambient Temperature Ta(°C)P o w e r D i s s i p a t i o n (m W )5020020406080100-20-401001501008060200600Wavelength(nm)R e l a t i v e S p e c t r a l S e n s i t i v i t y (%)Ta=25°40700800900100011001200⏹光电参数(Ta=25℃)参数符号条件最小典型最大单位光谱带宽λ0.5---840---1100nm 感光峰值波长λp ------940---nm 开路电压V OC Ee=5m W/cm 2λp=940nm ---0.32---V短路电流I SC Ee=5m W/cm 2λp=940nm ---60---μA反向亮电流I LEe=5m W/cm 2λp=940nm V R =5V5560---μA暗电流Id Ee=0m W/cm 2V R =10V------10nA反向击穿电压BV R Ee=0m W/cm 2I R =100μA 30------V 总计电容CtEe=0m W/cm 2V R =3V f=1MHZ ---12---pF 上升/下降时间t r /t fV R =10V R L =1K Ω25/25nS⏹光电特性曲线图.1耗散功率与环境温度图.2相对频谱灵敏度400Ambient Temperature Ta(°C)R e v e r s e D a r k C u r r e n t (n A )608010020101001000V =10V R1Reverse Voltage (V)T e r m i n a l C a p a c i t a n c e C t (p F )101000.1204060f=1MHzV =3V Ee=0mW cmR2/10Load Resistance R L ( )R e s p o n s e T i m e t r ,t f (u s )10310101010101010101-316012080402.55.07.5Ee(mW/cm )10.02V =5V Rλ=940nm图.3暗电流与环境温度图.4反向感光电流与辐射强度图.5结电容与反向电压图.6响应时间与负载电阻注意事项:1.我公司保留更改产品材料和以上说明书的权利，更改以上产品说明书恕不另行通知。

Littelfuse 保护电路器件 SPD2 4+0 系列商品说明书

Class II/Type 2/Type 1 CA Pluggable Multi-PoleDescriptionSurge protection devices (SPDs) provide equipment protection from transient overvoltage events lasting micro-seconds. By limiting the overvoltage to the equipment during these events, costly damage and downtime can be mitigated.The surge protection devices for the 4+0 configuration are available for 120 V to 480 V nominal voltage sub-distribution board applications.RCLegend L Line N Neutral Protective EarthRC Remote ContactsTD Thermal DisconnectionInternal ConfigurationFeatures & BenefitsModule & Base Ordering InformationCapability to clamp and withstand high-energy transients surge events and higher nominal discharge current to prevent disruption, downtime, and degradation or damage to equipment UL and VDE-IEC compliant in single part number One component can be utilized globally, reducing inventory needs and simplifying allocation of parts Interlocking tab mechanismSecures module to withstand vibration No additionalovercurrent protection devices required in UL applicationsReduces the number of components and costs required for protectionCompact footprint I ncreases panel design flexibilityVisual life indicatorQuick visual determines module replacement status to avoid loss of protectionPluggable modules Fast and simple to replace, minimizing maintenance and downtime. No tools required Thermal protection Eliminates catastrophic failureIP20 protection ratingFinger-safe design increases worker protectionPluggable RC ConnectorReplacement Module Ordering InformationDisclaimer Notice – Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at /product-disclaimer.Thermal Protection YesOperating State/Fault Indica tionGreen Flag/No Green FlagRemote Contact Switching Ca pa city AC: 250 V/1 A, 125 V/1 A;DC: 48 V/0.5 A, 24 V/0.5 A, 12 V/0.5 A Remote Contact Conductor Cross Section (max) 1.5 mm 2 (16 AWG) (Solid)Standards Passed* IEC 61643-11:2011 EN 61643-11:2012UL 1449, 4th editionProduct Dimensions 4TE Module and Base H 90.0 mm (3.54”); W 72.0 mm (2.84”);D 70.0 mm (2.76”)1TE Replacement Module H 45.0 mm (1.77”); W 18.0 mm (0.71”);D 57.2mm (2.25”)Package Dimensions 4TE Module and Base H 102.0 mm (4.01”); W 82.0 mm (3.23”);D 110.0 mm (4.33”)1TE Replacement Module H 102.0 mm (4.01”); W 28.0 mm (1.10”);D 110.0 mm (4.33”)SpecificationsNetwork Systems TN-S Mode of Protection L-PE, N-PE Nominal Discharge Current (8/20 µs) (I n ) 20 kA Maximum Discharge Current (8/20 µs) (I max ) Up to 50 kA Protective Elements High Energy MOV Response Time (t A ) < 25 ns Back-Up Fuse (max) 315 A / 250 A Gg Number of Ports 1Mechanical & Environmental Operating Temperature Range (T a ) -40 °C to +80 °C (-40 °F to +185 °F)Permissible Operating Humidity (RH) 5% to 95%Altitude (max) 4,000 m (13,123 ft)Terminal Screw Torque (M max ) 4.5 Nm (39.9 lbf-in)Conductor Cross Section (max) 35 mm² (2 AWG) (Solid, Stranded)/ 25 mm 2 (4 AWG) (Flexible)Mounting 35 mm DIN Rail, EN60715Degree of Protection IP20 (built-in)Housing Material Thermoplastic: Extinguishing Degree UL 94 V-0*SPD2-550-4P0-R and SPD2-550-M are UL Listed onlyWarranty – Visit /warranty for details.Module & Base Part Numbering SystemModule Only Part Numbering SystemSPD2 VVV MModule OnlySeriesMaximum Continuous Operating AC VoltageSPD2 VVV XPZ RModule & Base SeriesNeutralNumber of PolesMaximum Continuous Operating AC Voltage(1=yes or 0=no)。

二极管如何测量_各种二极管测量方法

二极管如何测量_各种二极管测量方法一. 二极管测量方法_普通二极管的检测（检波二极管、整流二极管、阻尼二极管、开关二极管、续流二极管）是由一个pn结构成的半导体器件，具有单向导电特性。

通过用万用表检测其正、反向电阻值，判别出二极管的电极，还可估测出二极管是否损坏。

1．极性的判别将万用表置于r×100档或r×1k档，两表笔分别接二极管的两个电极，测出一个结果后，对调两表笔，再测出一个结果。

两次测量的结果中，有一次测量出的阻值较大（为反向电阻），一次测量出的阻值较小（为正向电阻）。

在阻值较小的一次测量中，黑表笔接的是二极管的正极，红表笔接的是二极管的负极。

2．单负导电性能的检测及好坏的判断通常，锗材料二极管的正向电阻值为1k?左右，反向电阻值为300左右。

硅材料二极管的电阻值为5 k?左右，反向电阻值为∞（无穷大）。

正向电阻越小越好，反向电阻越大越好。

正、反向电阻值相差越悬殊，说明二极管的单向导电特性越好。

若测得二极管的正、反向电阻值均接近0或阻值较小，则说明该二极管内部已击穿短路或漏电损坏。

若测得二极管的正、反向电阻值均为无穷大，则说明该二极管已开路损坏。

3．反向击穿电压的检测二极管反向击穿电压（耐压值）用晶体管直流参数测试表测量。

其方法是：测量二极管时，应将测试表的“npn/pnp”选择键设置为npn，再将被测二极管的正极接测试表的“c”插孔内，负极测试表的“e”插孔，按下“v（br）”键，测试表指示出二极管的反向击穿电压值。

也兆欧表和万用表来测量二极管的反向击穿电压、测量时被测二极管的负极与兆欧表的正极相接，将二极管的正极与兆欧表的负极，用万用表（置于合适的直流电压档）监测二极管两端的电压。

如图4-71，摇动兆欧表手柄（应由慢加快），待二极管两端电压稳定而不再上升时，此电压值即是二极管的反向击穿电压。

二. 二极管测量方法_稳压二极管的检测1．正、负电极的判别从外形上看，金属封装稳压二极管管体的正极一端为平面形，负极一端为半圆面形。

BCR402R-DS-LED恒流控制芯片

Vs
Rext
Rsense (optional)
1
2
Is
Iout
GND Iout
IDRIVER
IOUT
LEDs
Application hints
BCR402R serves as an easy to use constant current source for LEDs. In stand alone application an external resistor can be connected to adjust the current from 20 mA to 60 mA. Rext can be determined by using the diagram 'Output current versus external resistor', or by refering to diagram 'Output current versus reference voltage'. Look for your desired output current on the y axis and read out the corresponding Vdrop. Calculate Rext: Rext = Vdrop / (Iout -(Vdrop/Rint)) Please take into account that the resulting output currents will be slightly lower due to the self heating of the component and the negative thermal coefficient.
Please visit our web site for application notes: /lowcostleddriver

mur420二极管参数

mur420二极管参数
MUR420是一种高效、快速恢复的二极管，适用于各种电源转换和马达驱动应用。

以下是MUR420二极管的主要参数：
1. 最大反向电压：400V
2. 最大反向恢复时间：25ns
3. 最大正向电流：4A
4. 最大正向电压：1.2V
5. 反向恢复电流：150mA
6. 工作温度范围：-55℃至+150℃
7. 封装形式：TO-220AB
MUR420二极管在高温、高反向电压和高正向电流条件下具有出色的稳定性和可靠性，能有效提高电源系统的效率。

由于其快速的反向恢复时间，该二极管也适用于高频率开关应用。

此外，MUR420符合RoHS 标准，无铅且环保。

在选择和使用MUR420二极管时，需要考虑以下几个因素：
1. 反向电压：确保二极管承受的反向电压不超过其最大值，以避免击穿或损坏。

2. 正向电流：根据电路需求选择适当正向电流值的二极管，以确保足够的电流容量。

3. 工作温度：考虑二极管的工作环境温度，以确保其能在所需温度范围内正常工作。

4. 封装形式：根据应用需求选择合适的封装形式，例如TO-220AB封
装适合用于大功率应用。

5. 反向恢复时间：对于高频率开关应用，需要选择具有较短反向恢复时间的二极管，以减小功耗和热损失。

总之，MUR420是一种适用于各种电源转换和马达驱动应用的优秀二极管。

在选择和使用时，需仔细考虑其参数和应用需求，以确保其能满足您的电路要求并发挥最佳性能。

NBB-402-E资料

Product DescriptionOrdering InformationTypical ApplicationsFeaturesFunctional Block DiagramRF Micro Devices, Inc.7628 Thorndike Road Greensboro, NC 27409, USA Tel (336) 664 1233Fax (336) 664 0454 Optimum Technology Matching® AppliedSi BJTGaAs MESFET GaAs HBT Si Bi-CMOSSiGe HBT Si CMOS InGaP/HBTGaN HEMTSiGe Bi-CMOSPin 1GroundRF INGroundCASCADABLE BROADBANDGaAs MMIC AMPLIFIER DC TO 8GHz•Narrow and Broadband Commercial and Military Radio Designs•Linear and Saturated Amplifiers •Gain Stage or Driver Amplifiers for MWRadio/Optical Designs (PTP/PMP/LMDS/UNII/VSA T/WLAN/Cellular/DWDM)The NBB-402 cascadable broadband InGaP/GaAs MMIC amplifier is a low-cost, high-performance solution for gen-eral purpose RF and microwave amplification needs. This 50Ω gain block is based on a reliable HBT proprietary MMIC design, providing unsurpassed performance for small-signal applications. Designed with an external bias resistor, the NBB-402 provides flexibility and stability. The NBB-402 is packaged in a low-cost, surface-mount ceramic package, providing ease of assembly for high-volume tape-and-reel requirements.•Reliable, Low-Cost HBT Design •15.0dB Gain, +15.8dBm P1dB@2GHz •High P1dB of +15.4dBm@6.0GHz •Single Power Supply Operation•50Ω I/O Matched for High Freq. UseNBB-402Cascadable Broadband GaAs MMIC Amplifier DC to 8GHzNBB-402-T1 or -T3Tape & Reel, 1000 or 3000 Pieces (respectively)NBB-402-E Fully Assembled Evaluation Board NBB-X-K1Extended Frequency InGaP Amp Designer’s Tool Kit Notes:1. Solder pads are coplanar to within ±0.025 mm.2. Lid will be centered relative to frontside metallization with a tolerance of ±0.13 mm.3. Mark to include two characters and dot to reference pin 1.Package Style: MPGA, Bowtie, 3x3, Ceramic9Absolute Maximum RatingsParameterRatingUnitRF Input Power +20dBm Power Dissipation 300mW Device Current70mA Channel T emperature 200°C Operating Temperature -45 to +85°C Storage Temperature-65 to +150°CExceeding any one or a combination of these limits may cause permanent damage.ParameterSpecification UnitConditionMin.Typ.Max.OverallV D =+3.9V, I CC =47mA, Z 0=50Ω, T A =+25°C Small Signal Power Gain, S2115.017.1dB f=0.1GHz to 1.0GHz 15.8dB f=1.0GHz to 4.0GHz 14.3dB f=4.0GHz to 6.0GHz 12.012.5dB f=6.0GHz to 8.0GHz Gain Flatness, GF±0.8dBf=0.1GHz to 5.0GHz Input and Output VSWR1.45:1f=0.1GHz to 4.0GHz 1.30:1f=4.0GHz to 8.0GHz 1.80:1f=8.0GHz to 10.0GHz Bandwidth, BW 6.3GHz BW3 (3dB)Output Power @-1dB Compression, P1dB15.8dBm f=2.0GHz 15.4dBm f=6.0GHz 15.5dBm f=8.0GHz Noise Figure, NF4.3dB f=3.0GHz Third Order Intercept, IP3+26.0dBm f=2.0GHzReverse Isolation, S12-17.5dB f=0.1GHz to 12.0GHzDevice Voltage, V D 3.6 3.9 4.2V Gain Temperature Coefficient,δG T /δT-0.0015dB/°CMTTF versus Temperature @ I CC =50mACase T emperature 85°C Junction Temperature 120.9°C MTTF>1,000,000hours Thermal ResistanceθJC 196°C/WJ T T CASE–V D I CC⋅--------------------------θJC °C Watt ⁄()= ESD sensitive device.RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s).Typical Bias ConfigurationApplication notes related to biasing circuit, device footprint, and thermal considerations are available on request.Application NotesDie AttachThe die attach process mechanically attaches the die to the circuit substrate. In addition, it electrically connects the ground to the trace on which the chip is mounted, and establishes the thermal path by which heat can leave the chip.Wire BondingElectrical connections to the chip are made through wire bonds. Either wedge or ball bonding methods are acceptable practices for wire bonding.Assembly ProcedureEpoxy or eutectic die attach are both acceptable attachment methods. T op and bottom metallization are gold. Conductive silver-filled epoxies are recommended. This procedure involves the use of epoxy to form a joint between the backside gold of the chip and the metallized area of the substrate. A 150°C cure for 1 hour is necessary. Recommended epoxy is Ablebond 84-1LMI from Ablestik.Bonding Temperature (Wedge or Ball)It is recommended that the heater block temperature be set to 160°C±10°C.Recommended Bias Resistor ValuesSupply Voltage, V CC(V)5810121520Bias Resistor, R CC (Ω)2281122162222322InV D = 3.9 VExtended Frequency InGaP Amplifier Designer’s Tool KitNBB-X-K1This tool kit was created to assist in the design-in of the RFMD NBB- and NLB-series InGap HBT gain block amplifiers. Each tool kit contains the following.• 5 each NBB-300, NBB-310 and NBB-400 Ceramic Micro-X Amplifiers• 5 each NLB-300, NLB-310 and NLB-400 Plastic Micro-X Amplifiers• 2 Broadband Evaluation Boards and High Frequency SMA Connectors•Broadband Bias Instructions and Specification Summary Index for ease of operationTape and Reel DimensionsAll Dimensions in Millimeters330 mm (13") REELMicro-X, MPGASYMBOL SIZE (mm)ITEMSSIZE (inches)FLANGE B T F 330 +0.25/-4.018.4 MAX 12.4 +2.0DiameterThicknessSpace Between Flange13.0 +0.079/-0.1580.724 MAX 0.488 +0.08HUBO S A 102.0 REF 13.0 +0.5/-0.21.5 MIN Outer DiameterSpindle Hole Diameter Key Slit Width D20.2 MINKey Slit Diameter4.0 REF0.512 +0.020/-0.0080.059 MIN0.795 MINUser Direction of FeedAo = 3.6 MM Bo = 3.6 MM Ko = 1.7 MMNOTES:1. 10 sprocket hole pitch cumulative tolerance ±0.2.2. Camber not to exceed 1 mm in 100 mm.3. Material: PS+C4. Ao and Bo measured on a plane 0.3 mm above the bottom of the pocket.5. Ko measured from a plane on the inside bottom of the pocket to the surface of the carrier.6. Pocket position relative to sprocket hole measured as true position of pocket, not pocket hole.Device Voltage versus Amplifier Current35.0040.0045.0050.0055.0060.00Amplifier Current, I CC (mA)P1dB versus Frequency at 25°C0.05.010.015.020.02.04.06.08.010.012.0Frequency (GHz)P 1d B (d B m )P OUT /Gain versus P IN at 2 GHz0.02.04.06.08.010.012.014.016.018.0-14.0-9.0-4.01.06.0P IN (dBm)P O U T (d B m ), G a i n (d B )Third Order Intercept versus Frequency at 25°C0.05.010.015.020.025.030.02.03.04.05.06.07.08.09.010.011.012.0Frequency (GHz)O u t p u t I P 3 (d B m )Note: The s-parameter gain results shown below include device performance as well as evaluation board and connector loss variations. The insertion losses of the evaluation board and connectors are as follows:1GHz to 4GHz=-0.06dB 5GHz to 9GHz=-0.22dB 10GHz to 14GHz=-0.50dB15GHz to 20GHz=-1.08dBS11 versus Frequency-20.0-15.0-10.0-5.00.00.05.010.015.020.0Frequency (GHz)S 11 (d B)S12 versus Frequency-25.0-20.0-15.0-10.0-5.00.00.05.010.015.020.0Frequency (GHz)S 12 (d B)S21 versus Frequency0.05.010.015.020.00.05.010.015.020.0Frequency (GHz)S 21 (d B)S22 versus Frequency-20.0-15.0-10.0-5.00.00.05.010.015.020.0Frequency (GHz)S 22 (d B )。

东裕光电科技有限公司光敏二极管产品规格书说明书

广州市东裕光电科技有限公司GUANGZHOU TONYU TECHNOLOGY CO., LTD产品规格书SPECIFICATION客户名称CUSTOMER产品名称PRODUCTION 光敏二极管Photo Diode 产品型号MODEL DY-FPD204-6B/L3版本号VERSION NO A1.0地址(Add)：广东省广州市番禺区石基镇海涌路3号10号厂房2楼电话(Tel)：************传真(Fax)：************邮箱(E-mail)：************网址(Net)：客户确认CUSTOMER CONFIRMATION审核CHECKED BY编制PREPARED BY 汪建新陈少龙DY-FPD204-6B/L3产品描述Descriptions⚫DY-FPD204-6B/L3是一种NPN型高速度和高敏感的光敏二极管.（DY-FPD204-6B/L3 is an NPN type photosensitive transistor with high speed and high sensitivity.）产品特性Features⚫响应时间快(Fast response time)⚫高灵敏度(High photo sensitivity)⚫引脚间距2.54mm (2.54mm Lead spacing)⚫无铅(Pb free)⚫符合RoHS要求(This product itself will remain within RoHS compliant version)产品应用Applications⚫自动门传感器(Automatic door sensor.)⚫游戏机(Game machine)⚫高速光电探测器(High speed photo detector)包装方式Packing Quantity Specification⚫袋装：1000PCS/袋，4袋/小盒，10小盒/箱(1000PCS/1Bag，4Bags/1Box，10Boxes/1Carton)一、外形图Outline dimensions ：单位 Unit公差 Tolerance芯片材料 Die material发光颜色 Emission color胶体颜色 Lens colormm±0.25mmSilicon－ BlackNotes: 1. All dimensions are in mm, tolerance is ±0.25 unless otherwise noted.2. An epoxy meniscus way extend about 1.5mm down the leads.3. Burr around bottom of epoxy may be 0.5mm Max. ※备注：承认书之编号和型号可用于查询，客户如有需要，请提供相应的编号和型号。

光敏二极管参数

光敏二极管参数引言光敏二极管（Photodiode）是一种光电器件，可将光能转化为电能。

它基于光电效应原理，能够对光的强度进行探测和测量。

本文将详细介绍光敏二极管的参数。

光敏二极管的工作原理光敏二极管是一种半导体器件，其工作原理基于内建电势与外界光照强度之间的相互作用。

当光照射到光敏二极管上时，光子的能量会激发电子从价带跃迁到导带，产生电子-空穴对。

这些电子-空穴对会在内建电场的作用下分离，形成电流。

因此，光敏二极管的输出电流与光照强度成正比。

光敏二极管的主要参数光敏二极管的性能由多个参数来描述，下面将详细介绍其中的几个重要参数。

1. 光电流响应度（Responsivity）光电流响应度是光敏二极管对光电信号的响应能力的衡量指标。

它定义为单位光功率照射情况下，光敏二极管输出的电流。

通常使用安培/瓦特（A/W）作为单位进行表示。

2. 光敏面积（Photosensitive Area）光敏面积是指光敏二极管可以感应光照的有效面积。

通常使用平方毫米（mm^2）作为单位。

3. 光响应时间（Response Time）光响应时间是光敏二极管由暗态到亮态响应的时间。

它定义为光敏二极管电流上升到其稳定值的时间。

光响应时间越短，光敏二极管对快速变化的光信号的响应能力越强。

4. 光电导增益（Photogain）光电导增益是指光照射到光敏二极管上时，输出电流与输入光功率之间的比值。

光电导增益可以用来衡量光敏二极管在电流放大上的性能。

光敏二极管的应用光敏二极管由于其高灵敏度、快速响应和广泛的光谱响应范围，被广泛应用于各种光电测量和光控制系统当中。

下面列举了一些典型的应用场景：1. 光电测量光敏二极管可用于各种光电测量中，例如光功率测量、光强度测量、光光学测量等。

其高灵敏度和较宽的动态范围使其能够准确测量各种光信号。

2. 光通信光敏二极管在光通信系统中起到光电转换的作用。

它可以将光信号转化为电信号，并经过放大和处理后进行传输和接收。

8848光敏二极管变容二极管的作用二极管整流原理三

8848光敏二极管　变容二极管的作用　二极管整流原理三电子元器件信息网 8848光敏二极管　变容二极管的作用　二极管整流原理三传感器及敏感.光电二极管参数元件超毅电子为您提供全系列的贴片发光二极管，有以下的尺寸：二极管。

0603、0805、1206、1210、3528、3020、5050、5060。

听说二极管整流电路。

有乐趣就请商酌，肖特基二极管作用。

或许也能够点击一下我们的官方网站：看着。

整流二极管。

学会光敏。

超毅电子是台湾亿光在华南地域最大的经销商，学会原理。

为您提供的产品全是亿光的原装正品。

学习光电二极管参数。

贴片发光二极管平素都是我们的主推产品，它的应用范畴十分广博，光敏二极管应用电路。

有应用在LED炫耀屏、手机背光源、液晶显示屏背光源、MP3背光，整流。

户外看板、汽车仪表、电器产品指示、影音建造、车载DVD等产品。

贴片发光二极管之所以应用得这么广泛，对比一下8848光敏二极管　变容二极管的作用　二极管整流原理。

新开发大客车产品的样车性能试验8848光敏二极管　变容二极管的作用　二极管整流原理三二极管的作用。

是由于它体积小、耗电量低、高亮度、低热量、运用寿命长、环保、坚忍受用。

听听发光二极管原理。

贴片发光二极管的类型紧要有：3020、1206、0603、0805、3528。

想知道8848光敏二极管　变容二极管的作用　二极管整流原理。

贴片发光二极管的主要参数如下：整流二极管图片。

波长在400——700nm左右，寿命长达小时，你知道二极管作用。

色泽厚实，看着三。

实在全部可见光局限；在使用方面不须要杂乱的电路策画。

二极管。

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红外线发射收受接管管，学习发光二极管正负极。

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红外线接收甲等光电产品。

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danger 红光定位灯

日成科技提供
选配附件：电源、支架
• • 1、专用电源（配套专用电源，具有很强的抗干扰性、高稳定性、抑制浪涌电流及缓启动等特点，特别适于恶劣的工作环境，能有效保证产品的稳定性和使用寿命） 2、工业支架（配套专用支架：具有良好的导热性和灵活性，使日成的镭射激光产品可安装在任何垂直或水平面，并使之在三维空间任意360度调整，以达到最佳使用效果
日成科技提供
danger 红光定位灯
Danger red light positioning
• • • • • • • • • • •
日成科技是一家专业从事半导体激光产品研发、设计和生产的高新技术企业。我公司面向国内外激光、光电子市场，重点针对半导体激光应用领域，先后开发了点光源、线光源、十字光源、功率可调激光器、频率可调激光器、光纤藕合激光器等几大类数百种产品，产品广泛应用于工业指示、医疗、军事、试验教学等领域。技术参数：波长：650nm 0.5～300mw 工作电压： 2.7~24V DC 工作电流：≤450mA 光束发散度：0.1～1.5mrad 光线直径：Φ1mm 光学透镜：光学镀膜玻璃或塑胶透镜尺寸：Φ6.5×15mm；Φ8×22mm；Φ10×25mm；Φ10×35mm；Φ12×36mm； Φ14×45mm；Φ16×55mm；Φ22×65mm；Φ22×80mm；Φ26×100mm（可定制）工作温度：பைடு நூலகம்10～75℃ 储存温度：－40～85℃ 使用寿命：连续使用大于8000小时

光敏二极管半角和全角

光敏二极管半角和全角
光敏二极管是一种能够感知光线并将其转化为电信号的器件。

在现代科技中，光敏二极管被广泛应用于光电传感器、光电开关、光电计数器等领域。

而在使用光敏二极管时，我们需要考虑到半角和全角两种不同的使用方式。

首先，半角光敏二极管是指其接收范围为180度内的光线，适用于需要局部感知光线的场合。

比如在自动化生产线上，可以利用半角光敏二极管来检测产品的位置和光线强度，从而实现精准的控制和监测。

而全角光敏二极管则能够接收360度范围内的光线，适用于需要全方位感知光线的场合。

例如在智能家居系统中，可以利用全角光敏二极管来实现对整个房间光线的监测和自动调节，提高居住舒适度和节能效果。

总的来说，光敏二极管的半角和全角使用方式各有其适用的场合，能够为不同的应用提供精准的光线感知和控制功能，为现代科技的发展和应用提供了重要的支持。

in5404二极管参数

in5404二极管参数一、引言IN5404二极管是一种常见的整流二极管，被广泛应用于电源供应、电动机控制、照明设备等领域。

本文将详细介绍IN5404二极管的参数特性及其对电路性能的影响。

二、最大反向电压（VRRM）IN5404二极管的最大反向电压（VRRM）是指在正常工作条件下，二极管能够承受的最大反向电压。

对于IN5404而言，其最大反向电压为400V。

超过这个电压，二极管可能会击穿，导致损坏。

三、最大平均整流电流（IO）最大平均整流电流（IO）是指在正常工作条件下，二极管能够承受的最大平均整流电流。

对于IN5404而言，其最大平均整流电流为3A。

超过这个电流，二极管可能会过热，影响其正常工作。

四、最大峰值反向电流（IRRM）最大峰值反向电流（IRRM）是指在正常工作条件下，二极管能够承受的最大峰值反向电流。

对于IN5404而言，其最大峰值反向电流为200A。

超过这个电流，二极管可能会受到过大的反向电流冲击，导致损坏。

五、导通压降（VF）导通压降（VF）是指在正常工作条件下，二极管在导通状态下的电压降。

对于IN5404而言，其导通压降约为0.85V。

导通压降会导致功耗，因此在设计电路时需要考虑导通压降对电路性能的影响。

六、最大反向恢复时间（trr）最大反向恢复时间（trr）是指二极管从导通状态到截止状态的时间。

对于IN5404而言，其最大反向恢复时间为2μs。

较长的反向恢复时间会导致二极管在高频率操作时的效率降低，从而影响整个电路的性能。

七、最大工作温度（Tj）最大工作温度（Tj）是指二极管能够承受的最高工作温度。

对于IN5404而言，其最大工作温度为150℃。

超过这个温度，二极管可能会失效或损坏，因此在实际应用中需要注意散热和温度控制。

八、结论IN5404二极管是一种常见的整流二极管，具有最大反向电压、最大平均整流电流、最大峰值反向电流、导通压降、最大反向恢复时间和最大工作温度等参数。

了解和掌握这些参数对于正确选用和设计电路具有重要意义。

红色一般用于红光感应

深圳市数冠电子科技有限公司光敏二极管选型指导版本:2018.04
说明1: 注意区分光敏二极管和光敏三极管, 两者都统称光敏管,一般都是两只引脚,但两者是不同类型产品,
光敏二极管灵敏度高,内部没有放大,需要外部放大电路,反应速度快,一般用于高灵敏度感应或数据传输. 光敏三极管内部有放大电路(三极管),反应速度慢,一般用于开关类光电检测.
说明2: 光敏二极管感光波长是一个范围,中心波长是最高灵敏度的波长,其它波长灵敏度参考规格书图表.
说明3: 感光电流可以体现感光灵敏度,外形和颜色等其它条件相同的情况下,感光电流越大的产品灵敏度越高.说明4: 上升/下降时间可以用于估算反应速度,计算最大传输频率等.
说明5: 颜色选用: 透明的感光波长是400nm--1100nm,也就是既可以感应可见光,也可以感应红外光; 黑色主要用于红外光感应,感应波长大约是800--1100nm (850nm发射源最好选用透明或专用于850nm的黑色),
红色一般用于红光感应.
说明6: 产品不断更新,请下载最新版本, 也可以按客户要求开发新产品.
深圳市数冠电子科技有限公司光敏二极管选型指导版本:2018.04
深圳市数冠电子科技有限公司光敏二极管选型指导版本:2018.04。

光敏二极管应用电路

二极管应用电路图4-1是采用光敏二极管的最简单的光检测电路;图a是二极管输出端为开路方式;其输出电压随入射光量的对数呈线性变化;但容易受温度变化的影响..图b是二级管输出端为短路方式．输出电流随入射光量的对数呈线性变化．一般采用输出端短路的工作方式..然而;这两种电路都是光电二极管单个使用;其输出电压或电流非常小;一般要与晶体管或IC等放大器组合使用..图4-2是无偏置电路实例、其中图a接高阻抗负载．图b接低阻抗负载..负载阻抗越高其特性越接近输出端开路方式;负载阻抗越低则越接近输出端短路方式..然而因二级管都是单个使用;所以输出信号极小．一般需要接放大电路..图4-3是反向偏置电路实例..光敏二极管加反向偏置;则响应速度可提高几倍以上..图4-3a是接有较大负载电阻的电路．图4-3b是接有较小负载电阻的电路..图4-3n所示电路的输出电压比图4-3b所示电路大;但响应特性不如图4-3b..图4-3b所示电路的输出电压比图4-3a小;但响应速度比图4-3a快..它们的响应特性都比无偏置电路好;但暗电流比无偏置电路大..图4-4是光敏二极管与晶体管组合应用电路实例..图4-4a为典型的集电极输出电路形式;而图4-4b为典型的发射极输出电路形式..集电极输出电路适用于脉冲入射光电路;输出信号与输入信号的相位相反;输出信号一般较大..而发射极输出电路适用于模拟信号电路;电阻RB可以减小暗电流;输出信号与输入信号的相位相同;输出信号一般较小..图4-5是光敏二极管VD与运放A组合应用实例．团4-5a为无偏置方式;图4-5b为反向偏置方式..无偏置电路可以用于测量宽范围的入射光;例如照度计等;但响应特性比不上反向偏置的电路;可用反馈电阻Rf调整输出电压;如果Rf用对数二极管替代．则可以输出对数压缩的电压..反向偏置电路的响应速度快．输出信号与输入信号同相位..图4-6是光敏二极管的几个应用电路实例..因4-6a是对数压缩电路;反馈电路中采用对数二极管VD;可以对输出电压进行对数压缩;测光范围较宽;一股用于模拟光信号电路..图4-6b是定位用传感器电路．采用对偶型光敏二极管;放大VD1与VD2的差动信号..图4-6c是与FE丁VT组合的调制光传感器电路．用于光控电路;响应速度快;噪声低;它是一种调制光等的交流专用放大器;但不适合于模拟信号电路中..。