PSPD-45B中文资料

合集下载

心理学量表汇总

心理学量表汇总心理学量表汇总来源：王彦斌的日志阿片成瘾严重程度量表305阿片戒断症状评价量表304阿森斯失眠量表297癌症患者信息选择问卷499艾森克个性问卷36艾森克人格调查表36艾森克人格问卷36艾森克人格问卷简式量表36，37安全感量表199暗示性测量162柏格氏(Berg)平衡量表395柏格氏平衡量表395暴力行为(Viol)14贝克抑郁自评问卷222变形关注量表503濒死体验评定量表290濒死体验现象问卷289病态人格量表Pd 14，28，340病态性心理Sexm14病态性心理量表274不适感量表64布里斯托尔记忆障碍研究中心最新神经心理成套量表174 猜疑心量表(S18)14长谷川痴呆量表176长谷川简易智能量表176长谷川简易智能修订量表(HDS-R)176长谷川智力量表176长谷川智能量表176长海痛尺评定486成就量表207成瘾研究中心量表307创伤后应激障碍量表(PK及PS)16大学生生活满意度评定量表420大学生适应不良(Mt)14大学生幸福感影响因素问卷418大学生学校适应不良量表410大中专学生生活事件量表415癫痫(Ep)14癫痫患者生活质量评定量表145短式McGill疼痛问卷(SF-MPQ)487多伦多述情障碍量表(TAS-20)235多伦多述情障碍量表(TAS-26)233儿童感知婚姻冲突量表478儿童孤独症评定量表476儿童受虐筛查表467儿童畏惧调查表-牙科分量表482儿童行为清单455反感治疗量表(TRT)16反向形成(Refo)14非精神科住院患者心理状态评定量表345肺癌患者生存质量测定量表FACT-L中文版(V4.0)111 肺癌患者生命质量测定量表QLQ-LC43中文版108愤怒失控量表(ANG)16愤世嫉俗量表(CYN)16福格-米勒(Fug-Meyer)平衡量表394父母教养方式评价量表444改良长谷川痴呆量表176肝癌患者生命质量测定量表105高度女性气质量表(HS)270高中生生存质量量表423个人评价问卷194工作适应障碍量表204工作态度Wa14工作障碍量表(WRK)16功能独立性评测382功能独立性评定382功能失调性态度问卷232功能综合评定量表379孤独症儿童行为检查量表470孤独症发育速率和次序错乱评定量表470 孤独症行为量表470孤独症行为评定量表470孤独症行为综合评定量表和剖析图471 古怪意念量表(BIZ)16关节炎影响测量量表124关节炎影响测量量表2(AIMS2)124关注健康量表(HEA)16国际勃起功能指数-5278海洛因滥用He14汉密顿焦虑量表214汉密顿抑郁量表225护士用住院病人观察量表376护士职业(Nc)14激惹、抑郁和焦虑自评量表231疾病家庭负担量表97加利福尼亚心理测验表38加利福尼亚心理调查表38加利福尼亚心理调查目录38加利福尼亚心理问卷38加州心理测验38加州心理量表38家庭关怀度指数156家庭和谐性问题(FAM)14家庭问题量表(FAM)16假性正常量表N14,168监狱适应性Ap-r14简化McGill疼痛问卷(SF-MPQ)487 简化勃起功能国际问卷278 简化烧伤健康量表154简明精神病量表332简明女性性功能指数279简明社交恐惧症量表377简式Fugl-Meyer评定393简式McGill疼痛问卷(SF-MPQ)487 简易精神状态检查表177 简易智力状态检查177健康不佳(HEA)14健康状况问卷54焦虑A14焦虑反应Ar14焦虑量表215焦虑量表(ANX)16焦虑状态-特质问卷212焦虑自评量表213教师职业倦怠问卷500教学潜能(Tp)14进取人格(Cs)14进取人格量表208精神病倾向因素(Pq)14精神病人生存质量问卷135精神超脱量表348精神分裂症(Sc)11精神分裂症病人生活质量量表137 精神分裂症量表(Sc)30，336 精神分裂症预后(Pg)14精神衰弱量表29，342精神障碍诊断量表309精神障碍诊断量表文本314精神质(PSY)14精神质量表168竞争态度量表209酒中毒Al14酒中毒Als14酒中毒MAC-R14酒中毒量表301酒中毒量表(MAC-R)16军人心理应激自评问卷258菌斑指数502康奈尔服役指数45康奈尔健康量表45，51康奈尔健康问卷45康奈尔筛查指数45康奈尔医学指数45克兰赛孤独症行为量表475克氏孤独症行为量表475克氏行为量表475恐怖症(PHO)14恐惧担心量表(FRS)16控制敌意量表(O-H)16口腔颌面部躯体变形障碍自评量表503口腔卫生指数502口述分级评分法(VRS)485跨文化个性量表49老年应对问卷256良性前列腺增生症患者生活质量量表149 领导才能(Lp)14领导才能量表207领悟社会支持量表206流调用抑郁自评量表224流行学研究中心抑郁量表224六点行为评分法(BRS-6)485洛文斯顿作业疗法用认知评定成套测验175 马洛-克罗恩社会赞许性量表198麦吉尔疼痛调查表486麦吉疼痛问卷486慢性脑器质性人格改变评定量表181美国精神病协会儿童多动症诊断量表465 美国心脏病学会卒中结局评价量表397美容心理状态自评量表69蒙德斯利个性调查表36密西根酒精依赖调查表298明尼苏达多相个性测查表11明显敌意(HOS)14目测类比定级法(VAS)487内向量表(Si)14内向投射(Intr)14内在适应性不良(In)14内在性适应不良量表204男性化-女性化量表（MF）29，272脑损害(BL)14脑卒中患者姿势控制量表386脑卒中康复运动功能评定量表398逆反社会量表(ASP)16匿病量表(Ds)14女性受虐(Fm)14女性兴趣(FEM)14诺丁汉健康量表91欧洲癌症研究与治疗组织肺癌患者生命质量测定特异性模块EORTC QLQ-LC13中文版109 欧洲癌症研究与治疗组织生命质量测定量表108疲劳量表-14490疲劳评定量表489匹茨堡睡眠质量指数量表292偏见量表165偏执量表29，341偏执型精神分裂症Pz14普遍性适应不良(Gm)14普遍性适应不良量表203器质性症状(ORG)14强迫(冲动)性Cpu14强迫量表(OBS)16强迫行为检查量表-修订版354青年人格问卷40青少年自评量表67轻躁狂(HYP)14轻躁狂量表30，337躯体变形障碍问卷503躯体变形障碍自陈检查表503躯体化反应()14全国中医学会ADHD研究协作组评分量表465权威冲突(AUT)14缺乏士气(MOR)14人格障碍筛查问卷373忍耐性(宽容性)量表166忍耐性(To)14妊娠压力量表267日常生活活动能力评定390日常生活能力量表329，392乳腺癌患者生活质量量表144乳腺癌患者生命质量测定量表(FACT-B)140乳腺癌患者生命质量测定量表(QLICP-BR142乳腺癌患者生命质量测定量表FACT-B中文版(V4.0)141 软垢指数503社会不适量表(SOD)16社会地位(St)14社会地位量表202社会内向量表30,200社会功能缺陷筛选量表（SDSS）329社会功能量表（SFRS）329社会适应不良(SOC)14社会适应不良量表203社会责任心(Re)14社会责任心量表205社区婴幼儿早期发现孤独症量表470神经症12题筛查表375神经质(NF)14神经质量表167肾移植患者生活质量相关评定量表152生活事件量表245生活质量指数99生活质量综合评定问卷83世界卫生组织(WHO)情绪状态问卷238世界卫生组织老年认知功能评价成套神经心理测验170 世界卫生组织生存质量测定量表77视功能损害眼病患者生存质量量表119视觉类比表485视觉模拟量表485视觉模拟评分法485数字、方位短时记忆计算机测试法182数字类比表485睡眠个人信念和态度量表294睡眠卫生意识和习惯量表295四点口述分级评分法(VRS-4)485糖尿病生存质量特异性量表114糖尿病特异性生存质量量表修订版(DQOL)116特质应对方式问卷255疼痛测量尺485疼痛分级指数(PRI)487疼痛简明记录表488疼痛评定量表系列485疼痛强度简易描述量表485疼痛语言评定量表485体表面积评分法(BARS)486体象障碍自评量表503填句测验179通情量表167同情心(Emp)14同性恋(HSX)14突发性公共卫生事件心理问卷268团体用心理社会应激调查表252退化作用(Reg)14脱逃(Ec)14威特莱氏应激量表247威胁性自杀(Thrs)14威胁性自杀量表288韦里－威斯－彼得斯活动水平量表466 违法性(Dq)14伪装量表(Odecp)15问题行为早期发现量表480五点口述分级评分法(VRS-5)485五级20项日常生活活动能力分级法391 西雅图心绞痛调查表123 显性焦虑(MAS)14显性焦虑量表221小婴儿气质问卷(EITQ)433，434效度量表K13,15效度量表L13,15效度量表Q13,15心功能不全QOL量表121心理教育评定量表中文修订版446新生儿20项行为神经评定483新生儿Apgar氏评分法483新生儿行为估价评分483性变态(Sv)14性变态量表274性别角色量表(男性GM及女性GF)16性感增强(Asx)14性高潮功能障碍诊断量表284性攻击量表273性化量表(Mf)14性交疼痛诊断量表284性兴奋障碍诊断量表284性厌恶诊断量表283性欲低下诊断量表283性自我防卫能力评定量表275修订版艾森克人格问卷(EPQ-R)36 修订匿病量表(Ds-r)14修改版外显攻击行为量表352学龄前儿童活动调查表468学生生活应激问卷411学业成就(Ac)14压抑R14压抑量表228牙石指数504亚健康问卷测评表45阳痿与冷阴量表279阳痿与阴冷(I-f)14阳性与阴性症状量表355药物成瘾者生命质量测定量表102 药物滥用(Das)14一般自我效能感量表187医学应对问卷253依赖性Dy14依赖性量表163疑病量表Hs25，335抑郁量表(DEP)11,14,16，26,227 抑郁自评量表223癔症量表27，338阴道痉挛诊断量表284饮酒问卷300婴儿气质问卷(RITQ)433，436婴幼儿孤独症筛选量表(CHAT)477幼儿气质评估表(TTS)433，438语句完成法测验179语言类比量表485原始性防卫机制(Prds)14孕妇生活事件量表265运动认知特质焦虑量表219运动员临场应激应付方式量表259运动员心理应激量表264运动员心理症状自评量表72运动中突发应激调查表259早期新生儿神经行为评分483躁狂症量表(Ma)15整形美容受术者心理状态自评量表503 正性负性情绪量表236症状自评量表64支配性Do14支配性量表(Do)16，164智力效力Ie14智力效率量表209智能简易快速检查（MIEF）326中国1~3岁幼儿气质问卷（CTTS）429中国4~8个月婴儿气质量表（CITS）428中国8~12岁学龄儿童气质问卷（CSTS）431 中国勃起功能指数278中国城市居民主观幸福感量表简本的编制90 中国地鼠情绪唤醒水平评定量表243中国儿童气质量表系列426中国人个性测量表48中国人利手量表378中国心身健康量表51中国学龄前3~7岁儿童气质量表（CPTS）430 中学生考试焦虑影响因素问卷407中学生特质焦虑影响因素问卷408中学生应对方式量表413中医肝脏象情绪评定量表239住院精神病人社会功能评定量表343装病量表(Mp)14装好量表(Ssp)15自测健康评定量表59自杀键Skey14自杀量表287自杀意念自评量表285自我低估量表(LSE)16自我接纳问卷188自我控制量表193自我控制能力(Cn)14自我力量(心理资源)Es14自我力量(心理资源)量表192自我描述问卷Ⅱ型185自我隐瞒量表191自知力评定量表351自知力与治疗态度问卷350宗教迷(REG)14综合性医院焦虑抑郁量表229作业疲劳症状自评量表4950～10数字疼痛量表(NRS-10)4850~10数字疼痛强度量表4850~5描述疼痛量表（VRS-5）486101点数字评分法（NRS-101）48511点数字评分法(NRS-11)48511点疼痛数字等级量表48516项人格因素问卷312~3岁儿童行为检查表4593~7岁儿童气质问卷（BSQ）433，44045区人体评分法4868~12岁儿童气质问卷433，441ABC量表470A型行为类型问卷(TABP)157A型行为量表(TPA)16A型行为临床会谈159Achenbach儿童行为量表455Barthel指数评定391Berg平衡量表395Berg平衡量表记录表395Bristol最新神经心理成套量表174 Carey儿童气质评价系列问卷433CCMD-2-R人格障碍临床定式检测工具359 CCMD-2-R人格障碍临床定式检查363 CCMD-2-R人格障碍筛查问卷361Cohen-Mansfield激越问卷180Conners多动症父母和教师简明量表465 Conners儿童行为问卷461Conners父母用量表462Conners教师用量表463Conners教师用量表(简化版)463C型行为量表160C型行为特征量表160DS M-Ⅲ-R人格障碍临床定式检测371 Epworth嗜睡量表296 Fugl-Meyer上肢运动功能评价表393 Fugl-Meyer下肢运动功能评价表394 Fugl-Meyer运动功能评定393Hachinski缺血记分表389Hachinski缺血记分法（HIS）389 Hachinski缺血指数量表389Hopkin's症状清单64Lindmark改良运动功能评定表388 Lindmark感觉运动功能评定表388 LOTCA检查175LOTCA认知功能成套测验175MBTI人格类型量表44McGill疼痛问卷486QIUS在校学生气质量表(QTS)401 Russell吸烟原因问卷303Rutter儿童行为量表463Rutter儿童行为量表（教师问卷）463Rutter儿童行为问卷463Rutter儿童行为问卷（父母问卷）464Sarason考试焦虑量表217Si量表30,200Snyder自我监控量表个人反应问卷184TDL生命质量测定表98Wallace自我概念量表190WHO神经症筛选表375Wong-Baker面部表情量表法485《行为医学量表手册》（光盘版量表名称分类目录）量表名称后数字为该量表在手册中的页码心理行为综合评定明尼苏达多相个性测查表（11）16项人格因素问卷（31）艾森克人格问卷（36）加利福尼亚心理调查表（38）MBTI人格类型量表（44）康奈尔医学指数（45）中国人个性测量表（48）中国心身健康量表（51）健康状况问卷（54）自测健康评定量表（59）症状自评量表（64）青少年自评量表（67）美容心理状态自评量表（69）运动员心理症状自评量表（72）健康状况与生存质量评定世界卫生组织生存质量测定量表（77）生活质量综合评定问卷（83）中国城市居民主观幸福感量表简本的编制（90）诺丁汉健康量表（91）疾病影响程度量表（93）疾病家庭负担量表（97）TDL生命质量测定表（98）生活质量指数（99）药物成瘾者生命质量测定量表（102）肝癌患者生命质量测定量表（105）肺癌患者生命质量测定量表QLQ—LC43中文版（108）肺癌患者生存质量测定量表FACT—L中文版(V4.0)（111）糖尿病生存质量特异性量表（114）糖尿病特异性生存质量量表修订版（DQOL）（116）视功能损害眼病患者生存质量量表（119）心功能不全QOL量表（121）西雅图心绞痛调查表（123）关节炎影响测量量表（124）关节炎影响测量量表2（125）精神病人生存质量问卷（135）精神分裂症病人生活质量量表（137）乳腺癌患者生命质量测定量表（FACT?B）（140）乳腺癌患者生命质量测定量表（QLICP?BR）（142）乳腺癌患者生活质量量表（144）癫痫患者生活质量评定量表（145）良性前列腺增生症患者生活质量量表（149）肾移植患者生活质量相关评定量表（152）简化烧伤健康量表（154）家庭关怀度指数（156）个性因素与气质评定A型行为类型问卷（157）A型行为临床会谈（159）C型行为量表（160）暗示性测量（162）依赖性量表（163）支配性量表（164）偏见量表（165）忍耐性(宽容性)量表（166）通情量表（167）神经质量表（167）精神质量表（168）假性正常量表（168）认知与神经心理评定世界卫生组织老年认知功能评价成套神经心理测验（170）Bristol最新神经心理成套量表（174）洛文斯顿作业疗法用认知评定成套测验（175）长谷川智能量表（176）简易智力状态检查（177）语句完成法测验（179）Cohen?Mansfield激越问卷（180）慢性脑器质性人格改变评定量表（181）数字、方位短时记忆计算机测试法（182）自我能力评定Snyder自我监控量表个人反应问卷（184）自我描述问卷Ⅱ型（185）一般自我效能感量表（187）自我接纳问卷（188）Wallace自我概念量表（190）自我隐瞒量表（191）自我力量(心理资源)量表（192）自我控制量表（193）个人评价问卷（194）社会功能与适应能力评定马洛-克罗恩社会赞许性量表（198）安全感量表（199）社会内向量表（200）社会地位量表（202）普遍性适应不良量表（203）社会适应不良量表（203）内在性适应不良量表（204）工作适应障碍量表（204）社会责任心量表（205）领悟社会支持量表（206）领导才能量表（207）成就量表（207）进取人格量表（208）智力效率量表（209）竞争态度量表（209）情绪评定焦虑状态?特质问卷（212）焦虑自评量表（213）汉密顿焦虑量表（214）焦虑量表（215）Sarason考试焦虑量表（217）运动认知特质焦虑量表（219）显性焦虑量表（221）贝克抑郁自评问卷（222）抑郁自评量表（223）流调用抑郁自评量表（224）汉密顿抑郁量表（225）抑郁量表（227）压抑量表（228）综合性医院焦虑抑郁量表（229）激惹、抑郁和焦虑自评量表（231）功能失调性态度问卷（232）多伦多述情障碍量表（TAS-26）（233）多伦多述情障碍量表（TAS-20）（235）正性负性情绪量表（236）世界卫生组织（WHO）情绪状态问卷（238）中医肝脏象情绪评定量表（239）中国地鼠情绪唤醒水平评定量表（243）生活事件、应激与应付方式评定生活事件量表（245）威特莱氏应激量表（247）团体用心理社会应激调查表（252）医学应对问卷（253）特质应对方式问卷（255）老年应对问卷（256）军人心理应激自评问卷（258）运动员临场应激应付方式量表（259）运动员心理应激量表（264）孕妇生活事件量表（265）妊娠压力量表（267）突发性公共卫生事件心理问卷（268）性心理与性功能评定高度女性气质量表（270）男性化?女性化量表（272）性攻击量表（273）性变态量表（274）病态性心理量表（274）性自我防卫能力评定量表（275）国际勃起功能指数-5（278）中国勃起功能指数（278）阳痿与冷阴量表（279）简明女性性功能指数（279）性欲低下诊断量表（283）性厌恶诊断量表（283）性兴奋障碍诊断量表（284）阴道痉挛诊断量表（284）性高潮功能障碍诊断量表（284）性交疼痛诊断量表（284）自杀评定自杀意念自评量表（285）自杀量表（287）威胁性自杀量表（288）濒死体验现象问卷（289）濒死体验评定量表（290）睡眠评定匹兹堡睡眠质量指数量表（292）睡眠个人信念和态度量表（294）睡眠卫生意识和习惯量表（295）Epworth嗜睡量表（296）阿森斯失眠量表（297）烟酒与药物依赖评定密西根酒精依赖调查表（298）饮酒问卷（300）酒中毒量表（301）Russell吸烟原因问卷（303）阿片戒断症状评价量表（304）阿片成瘾严重程度量表（305）成瘾研究中心量表（307）精神障碍评定精神障碍诊断量表（309）智能简易快速检查（MIEF）326社会功能量表（SFRS）329精神症状全面量表（331）简明精神病量表（332）疑病量表（335）精神分裂症量表（336）轻躁狂量表（337）癔症量表（338）病态人格量表（340）偏执量表（341）精神衰弱量表（342）住院精神病人社会功能评定量表（343）非精神科住院患者心理状态评定量表（345）精神超脱量表（348）自知力与治疗态度问卷（350）自知力评定量表（351）修改版外显攻击行为量表（352）强迫行为检查量表—修订版（354）阳性与阴性症状量表（355）CCMD—2—R人格障碍临床定式检测工具（359）CCMD—2—R人格障碍筛查问卷（361）CCMD—2—R人格障碍临床定式检查（363）DS M—Ⅲ—R人格障碍临床定式检测（371）人格筛查问卷（373）WHO神经症筛选表（375）护士用住院病人观察量表（376）简明社交恐惧症量表（377）神经功能与生活能力评定中国人利手量表（378）功能综合评定量表（379）功能独立性评测（382）脑卒中患者姿势控制量表（386）Lindmark感觉运动功能评定表（388）Hachinski 缺血记分表（389）日常生活活动能力评定（390）Barthel指数评定(391)日常生活活动能力量表（392）Fugl-Meyer运动功能评定（393）福格-米勒（Fugl-Meyer)平衡量表（394）柏格氏（Berg）平衡量表（395）美国心脏病学会卒中结局评价量表（397）脑卒中康复运动功能评定量表（398）学生心理行为评定QIUS在校学生气质量表(QTS)（401）中学生考试焦虑影响因素问卷（407）中学生特质焦虑影响因素问卷（408）大学生学校适应不良量表（410）学生生活应激问卷（411）中学生应对方式量表（413）大中专学生生活事件量表（415）大学生幸福感影响因素问卷（418）大学生生活满意度评定量表（420）高中生生存质量量表（423）儿童心理行为评定中国儿童气质量表系列（426）中国4~8个月婴儿气质量表(428)中国1~3岁幼儿气质问卷（429）中国学龄前3~7岁儿童气质量表（430）中国8~12岁学龄儿童气质问卷（431）Carey 儿童气质评价系列问卷（433）小婴儿气质问卷（434）婴儿气质问卷（436）幼儿气质评估表（438）3~7岁儿童气质问卷（440）8~12岁儿童气质问卷(441)父母教养方式评价量表（444）心理教育评定量表中文修订版（446）Achenbach儿童行为量表（455）2~3岁儿童行为检查表（459）Conners儿童行为问卷（461）Rutter儿童行为问卷（463）Conners多动症父母和教师简明量表（465）美国精神病协会儿童多动症诊断量表(465)全国中医学会ADHD研究协作组评分量表(465) 韦里－威斯－彼得斯活动水平量表（466）儿童受虐筛查表（467）学龄前儿童活动调查表（468）孤独症发育速率和次序错乱评定量表（470）孤独症行为评定量表（470）孤独症行为综合评定量表和剖析图（471）克兰赛孤独症行为量表（475）儿童孤独症评定量表（476）婴幼儿孤独症筛选量表（CHAT）（477）儿童感知婚姻冲突量表（478）问题行为早期发现量表（480）儿童畏惧调查表—牙科分量表（482）新生儿Apgar氏评分法（483）新生儿20项行为神经评定（483）其他量表疼痛评定量表系列（485）口述分级评分法(VRS)四点口述分级评分法(VRS-4)五点口述分级评分法(VRS-5)Wong-Baker面部表情量表法六点行为评分法(BRS-6)疼痛强度简易描述量表0~10数字疼痛强度量表0～10数字疼痛量表(NRS-10)101点数字评分法（NRS-101）长海痛尺评定体表面积评分法(BARS)McGill疼痛问卷简化McGill疼痛问卷（SF-MPQ）疼痛简明记录表疲劳评定量表（489）疲劳量表—14（490）附：慢性疲劳综合征的诊断与评定（491）作业疲劳症状自评量表（495）癌症患者信息选择问卷（499）教师职业倦怠问卷（500）口腔卫生指数（502）口腔颌面部躯体变形障碍自评量表（503）。

PD204-6B中文资料

Everlight Electronics Co., Ltd. http:\\ Rev 1.3 Page: 1 of 7Technical Data Sheet3mm Silicon PIN Photodiode T-1PD204-6BFeatures․Fast response time ․High photo sensitivity ․Small junction capacitance ․Pb freeDescriptions․PD204-6B is a high speed and high sensitive PIN photodiode in a standard 3Φplastic package.The device is matched to infrared emitting diode.Applications․Automatic door sensor ․Copier․Game machineDevice Selection Guide ChipLED Part No.MaterialLens ColorPD Silicon Water clearPD204-6BAbsolute Maximum Ratings (Ta=25℃)Parameter Symbol RatingUnits Reverse Voltage V R 32 VOperating Temperature T opr-25 ~ +85 ℃Storage Temperature T stg-40 ~ +85 ℃Soldering Temperature T sol 260 ℃P c 150 mWPower Dissipation at(or below)25℃Free Air TemperatureNotes: *1:Soldering time≦5 seconds.Everlight Electronics Co., Ltd. http:\\ Rev 1.3 Page: 2 of 7Everlight Electronics Co., Ltd. http:\\ Rev 1.3 Page: 3 of 7PD204-6BElectro-Optical Characteristics (Ta=25℃)Parameter Symbol Condition Min Typ Max UnitRang Of Spectral Bandwidth λ0.5 --- 840 --- 1100nm Wavelength Of Peak Sensitivity λP --- --- 940 --- nm Open-Circuit Voltage V OC Ee=5mW/cm 2λp=940nm --- 0.42 --- V Short- Circuit Current I SC Ee=1mW/cm 2 λp=940nm --- 3.0 --- μA Reverse Light Current I L Ee=1mW/cm 2 λp=940nm V R =5V 1.0 3.0 --- μA Reverse Dark CurrentI DEe=0mW/cm 2V R =10V --- --- 10 nAReverse Breakdown Voltage B VR Ee=0mW/cm 2 I R =100μA 32 170 --- VTotal Capacitance C t Ee=0mW/cm 2V R =5V f=1MHz--- 5 --- pFRise Time t r --- 6 ---Fall Timet fV R =10VR L =1000Ω--- 6 --- nSPD204-6BEverlight Electronics Co., Ltd. http:\\ Rev 1.3 Page: 4 of 7Everlight Electronics Co., Ltd. http:\\ Rev 1.3 Page: 5 of 7PD204-6BReliability Test Item And ConditionThe reliability of products shall be satisfied with items listed below.Confidence level：90%Everlight Electronics Co., Ltd. http:\\ Rev 1.3 Page: 6 of 7PD204-6B Packing Quantity Specification2. When using this product, please observe the absolute maximum ratings and the instructionsfor using outlined in these specification sheets. EVERLIGHT assumes no responsibility for any damage resulting from use of the product which does not comply with the absolutemaximum ratings and the instructions included in these specification sheets.3. These specification sheets include materials protected under copyright of EVERLIGHTcorporation. Please don’t reproduce or cause anyone to reproduce them without EVERLIGHT’s consent.Everlight Electronics Co., Ltd. http:\\ Rev 1.3 Page: 7 of 7。

HPB45M-82S 型磁场断路器简要中文说明

HPB45M-82S直流磁场断路器产品说明书和产品型式试验报告目录HPB45M-82S型磁场断路器简要中文说明 (3)1．原理及结构 (3)2．型号说明 (5)3．性能参数 (6)4．型式试验报告简介 (9)HPB45M-82S 型磁场断路器简要中文说明HPB45M-82S 型直流断路器是瑞士SECHERON公司生产的高速直流断路器，主要用于发电机转子磁场的分断。

本投标书中提供了该型直流断路器的产品说明书及型式试验报告。

为了对该断路器有一个概要式的了解，在此，特提供一个简要的说明。

1．原理及结构1. 原理HPB是利用电磁控制和具有自然冷却能力的单极型直流断路器。

在电路出现过流（例如短路等）情况下具有很短的响应时间适合于保护电站的直流系统。

本断路器在检测到过流情况下具有非常快的响应时间，能够立刻建立恒定的电压来灭弧。

2. 特点1）对地高绝缘能力2）高分断能力3）不易受气候条件影响4）工作寿命长5）易维护6）有限的尺寸3. 标准本断路器依据IEC 推荐技术标准77和157.1制造。

4.重量断路器重量：114Kg灭弧罩重量：32Kg5.结构本断路器由玻璃纤维加固聚酯制成的固定绝缘框架(5117-5114)、主电路(5100-5200)、合闸装置(5600)、过电流跳闸装置(5300)、辅助接点(5500)和灭弧罩(5800)组成。

操作机械及原理：主电路由一个带有活动触头(5005-5205)的位置稍低的连接器(5201)和一个位置稍高的带有固定触头（5107）的连接器(5103)组成, 触头表面安装有银合金。

合闸装置(5600)包括一个带有闭合线圈(5602)的U型实心电枢。

合闸装置内部是活动铁芯(5606),及闭合杆(5607)和(5608)。

跳闸装置(5300)包括一个叠片电枢(5306-5331),一个活动铁心(5308)连着一个由弹簧(5329)控制的杆(5320)。

跳闸动作值可以通过改变磁路部分的位置进行调整,这样改变了空气间隙。

常用化工介质的名称和缩写中英文对照

常用化工介质的名称和缩写中英文对照A/MMA 丙烯腈/甲基丙烯酸甲酯共聚物AA 丙烯酸AAS 丙烯酸酯‐丙烯酸酯‐苯乙烯共聚物ABFN 偶氮(二)甲酰胺ABN 偶氮(二)异丁腈ABPS 壬基苯氧基丙烷磺酸钠ABR 聚丙烯酸酯ABS 苯乙烯‐丙烯腈‐丁二烯共聚物ABVN 偶氮(二)异庚腈AC 偶氮(二)碳酰胺ACB 2‐氨基‐4‐氯苯胺ACNU 嘧啶亚硝脲ACP 三氧化铝ACR 丙烯酸脂共聚物ACS 苯乙烯‐丙烯腈‐氯化聚乙烯共聚物ACTA 促皮质素ADC 偶氮甲酰胺ADCA 偶氮二甲酰胺AE 脂肪醇聚氧乙烯醚AES 脂肪醇聚氧乙烯醚硫酸酯钠盐AI 酰胺‐酰亚胺(聚合物)AK 醇酸树脂AM 丙烯酰胺AN 丙烯腈AN‐AE 丙烯腈‐丙烯酸酯共聚物ANM 丙烯腈‐丙烯酸酯合成橡胶 AP 多羟基胺基聚醚APP 无规聚丙烯AR 丙烯酸酯橡胶AS 丙烯腈‐苯乙烯共聚物ASA 丙烯腈‐苯乙烯‐丙烯酸酯共聚物ATT 靛蓝AU 聚酯型聚氨酯橡胶AW 6‐乙氧基‐2，2，4‐三甲基‐1，2‐二氢化喹啉BAA 正丁醛苯胺缩合物BAC 碱式氯化铝BACN 新型阻燃剂BAD 双水杨酸双酚A 酯BAL 2，3‐巯(基)丙醇BBP 邻苯二甲酸丁苄酯BBS N‐叔丁基‐乙‐苯并噻唑次磺酰胺BC 叶酸BCD β－环糊精BCG 苯顺二醇BCNU 氯化亚硝脲BD 丁二烯BE 丙烯酸乳胶外墙涂料BEE 苯偶姻乙醚BFRM 硼纤维增强塑料BG 丁二醇BGE 反应性稀释剂BHA 特丁基‐4 羟基茴香醚BHT 二丁基羟基甲苯BL 丁内酯BLE 丙酮‐二苯胺高温缩合物BLP 粉末涂料流平剂BMA 甲基丙烯酸丁酯BMC 团状模塑料BMU 氨基树脂皮革鞣剂BN 氮化硼BNE 新型环氧树脂BNS β－萘磺酸甲醛低缩合物BOA 己二酸辛苄酯BOP 邻苯二甲酰丁辛酯BOPP 双轴向聚丙烯BP 苯甲醇BPA 双酚ABPBG 邻苯二甲酸丁(乙醇酸乙酯)酯BPF 双酚FBPMC 2‐仲丁基苯基‐N‐甲基氨基酸酯BPO 过氧化苯甲酰BPP 过氧化特戊酸特丁酯BPPD 过氧化二碳酸二苯氧化酯BPS 4，4’‐硫代双(6‐特丁基‐3‐甲基苯酚)BPTP 聚对苯二甲酸丁二醇酯BR 丁二烯橡胶 BRN 青红光硫化黑BROC 二溴(代)甲酚环氧丙基醚BS 丁二烯‐苯乙烯共聚物BS‐1S 新型密封胶BSH 苯磺酰肼BSU N，N’‐双(三甲基硅烷)脲BT 聚丁烯‐1 热塑性塑料BTA 苯并三唑BTX 苯‐甲苯‐二甲苯混合物BX 渗透剂BXA 己二酸二丁基二甘酯BZ 二正丁基二硫代氨基甲CA 醋酸纤维素CAB 醋酸‐丁酸纤维素CAN 醋酸‐硝酸纤维素CAP 醋酸‐丙酸纤维素CBA 化学发泡剂CDP 磷酸甲酚二苯酯CF 甲醛‐甲酚树脂,碳纤维CFE 氯氟乙烯CFM 碳纤维密封填料CFRP 碳纤维增强塑料CLF 含氯纤维CMC 羧甲基纤维素CMCNa 羧甲基纤维素钠CMD 代尼尔纤维CMS 羧甲基淀粉CN 硝酸纤维素CNA α‐蒎烯树脂COPP 共聚聚丙烯CP 丙酸纤维素CPE 氯化聚乙烯CPL 己内酰胺CPPG 聚氯醚CPVC 氯化聚氯乙烯(过氯乙烯) CR 氯丁橡胶CS 酪蛋白塑料(酪素塑料) CSPE 氯横化聚乙烯CTA 三醋酸纤维素CTEE 三氟氯乙烯(氯化三氟乙烯) CUP 铜氨纤维CV 粘胶纤维DAF 富马酸二烯丙酯DAIP 间苯二甲酸二烯丙酯DAM 马来酸二烯丙酯DAP 间苯二甲酸二烯丙酯DATBP 四溴邻苯二甲酸二烯丙酯DBA 己二酸二丁酯DBEP 邻苯二甲酸二丁氧乙酯DBP 邻苯二甲酸二丁酯DBR 二苯甲酰间苯二酚DBS 癸二酸二癸酯DCCA 二氯异氰脲酸DCCK 二氯异氰脲酸钾DCCNa 二氯异氰脲酸钠DCHP 邻苯二甲酸二环乙酯DCPD 过氧化二碳酸二环乙酯DDA 己二酸二癸酯DDP 邻苯二甲酸二癸酯DEAE 二乙胺基乙基纤维素DEP 邻苯二甲酸二乙酯DETA 二乙撑三胺DFA 薄膜胶粘剂DHA 己二酸二己酯DHP 邻苯二甲酸二己酯DHS 癸二酸二己酯DIBA 己二酸二异丁酯DIDA 己二酸二异癸酯DIDG 戊二酸二异癸酯DIDP 邻苯二甲酸二异癸酯DINA 己二酸二异壬酯DINP 邻苯二甲酸二异壬酯DINZ 壬二酸二异壬酯DIOA 己酸二异辛酯DIOP 邻苯二甲酸二异辛酯DIOS 癸二酸二异辛酯DIOZ 壬二酸二异辛酯DIPA 二异丙醇胺DMA 二甲胺DMC 碳酸二甲酯DMEP 邻苯二甲酸二甲氧基乙酯DMF 二甲基甲酰胺DMP 邻苯二甲酸二甲酯DMS 癸二酸二甲酯DMSO 二甲基亚砜DMT 对苯二甲酸二甲酯DNA 己二酸二壬酯DNP 邻苯二甲酸二壬酯DNS 癸二酸壬酯DOP 邻苯二甲酸二辛酯DOPP 对苯二甲酸二辛酯DOS 癸二酸二辛酯DOTP 对苯二甲酸二异辛酯DOZ 壬二酸二辛酯DPA 二苯胺DVB 二乙烯基苯E/EA 乙烯/丙烯酸乙酯共聚物E/P 乙烯/丙烯共聚物E/P/D 乙烯/丙烯/二烯三元共聚物E/TEE 乙烯/四氟乙烯共聚物E/VAC 乙烯/醋酸乙烯酯共聚物E/VAL 乙烯/乙烯醇共聚物EAA 乙烯‐丙烯酸共聚物EAK 乙基戊丙酮EBM 挤出吹塑模塑EC 乙基纤维素ECB 乙烯共聚物和沥青的共混物ECD 环氧氯丙烷橡胶ECTEE 聚(乙烯‐三氟氯乙烯)ED‐3 环氧酯EDC 二氯乙烷EDTA 乙二胺四醋酸EEA 乙烯‐醋酸丙烯共聚物EG 乙二醇2‐EH ：异辛醇EO 环氧乙烷EOT 聚乙烯硫醚EP 环氧树脂EPI 环氧氯丙烷EPM 乙烯‐丙烯共聚物EPOR 三元乙丙橡胶EPR 乙丙橡胶EPS 可发性聚苯乙烯EPSAN 乙烯‐丙烯‐苯乙烯‐丙烯腈共聚物EPT 乙烯丙烯三元共聚物EPVC 乳液法聚氯乙烯EU 聚醚型聚氨酯EVA 乙烯‐醋酸乙烯共聚物EVE 乙烯基乙基醚EXP 醋酸乙烯‐乙烯‐丙烯酸酯三元共聚乳液F/VAL 乙烯/乙烯醇共聚物F‐23 四氟乙烯‐偏氯乙烯共聚物F‐30 三氟氯乙烯‐乙烯共聚物F‐40 四氟氯乙烯‐乙烯共聚物FDY 丙纶全牵伸丝FEP 全氟(乙烯‐丙烯)共聚物FNG 耐水硅胶FPM 氟橡胶FRA 纤维增强丙烯酸酯FRC 阻燃粘胶纤维FRP 纤维增强塑料FRPA‐101 玻璃纤维增强聚癸二酸癸胺(玻璃纤维增强尼龙1010 树脂)FRPA‐610 玻璃纤维增强聚癸二酰乙二胺(玻璃纤维增强尼龙610 树脂)FWA 荧光增白剂GF 玻璃纤维GFRP 玻璃纤维增强塑料GFRTP 玻璃纤维增强热塑性塑料促进剂GOF 石英光纤GPS 通用聚苯乙烯GR‐1 异丁橡胶GR‐N 丁腈橡胶GR‐S 丁苯橡胶GRTP 玻璃纤维增强热塑性塑料GUV 紫外光固化硅橡胶涂料GX 邻二甲苯GY 厌氧胶H 乌洛托品HDI 六甲撑二异氰酸酯HDPE 低压聚乙烯(高密度)HEDP 1‐羟基乙叉‐1，1‐二膦酸HFP 六氟丙烯HIPS 高抗冲聚苯乙烯HLA 天然聚合物透明质胶HLD 树脂性氯丁胶HM 高甲氧基果胶HMC 高强度模塑料HMF 非干性密封胶HOPP 均聚聚丙烯HPC 羟丙基纤维素HPMC 羟丙基甲基纤维素HPMCP 羟丙基甲基纤维素邻苯二甲酸酯HPT 六甲基磷酸三酰胺HS 六苯乙烯HTPS 高冲击聚苯乙烯IEN 互贯网络弹性体IHPN 互贯网络均聚物IIR 异丁烯‐异戊二烯橡胶IO 离子聚合物IPA 异丙醇IPN 互贯网络聚合物IR 异戊二烯橡胶IVE 异丁基乙烯基醚JSF 聚乙烯醇缩醛胶JZ 塑胶粘合剂KSG 空分硅胶LAS 十二烷基苯磺酸钠LCM 液态固化剂LDJ 低毒胶粘剂LDN 氯丁胶粘剂LDPE 高压聚乙烯(低密度)LDR 氯丁橡胶LF 脲LGP 液化石油气LHPC 低替代度羟丙基纤维素LIM 液体侵渍模塑LIPN 乳胶互贯网络聚合物LJ 接体型氯丁橡胶LLDPE 线性低密度聚乙烯LM 低甲氧基果胶LMG 液态甲烷气LMWPE 低分子量聚乙稀LN 液态氮LRM 液态反应模塑LRMR 增强液体反应模塑LSR 羧基氯丁乳胶MA 丙烯酸甲酯MAA 甲基丙烯酸MABS 甲基丙烯酸甲酯‐丙烯腈‐丁二烯‐苯乙烯共聚物MAL 甲基丙烯醛MBS 甲基丙烯酸甲酯‐丁二烯‐苯乙烯共聚物MBTE 甲基叔丁基醚MC 甲基纤维素MCA 三聚氰胺氰脲酸盐MCPA‐6 改性聚己内酰胺(铸型尼龙6)MCR 改性氯丁冷粘鞋用胶MDI 3，3’‐二甲基‐4，4’‐二氨基二苯甲烷MDI 二苯甲烷二异氰酸酯(甲撑二苯基二异氰酸酯)MDPE 中压聚乙烯(高密度)MEK 丁酮(甲乙酮)MEKP 过氧化甲乙酮MES 脂肪酸甲酯磺酸盐MF 三聚氰胺‐甲醛树脂M‐HIPS 改性高冲聚苯乙烯MIBK 甲基异丁基酮MMA 甲基丙烯酸甲酯MMF 甲基甲酰胺MNA 甲基丙烯腈MPEG 乙醇酸乙酯MPF 三聚氨胺‐酚醛树脂MPK 甲基丙基甲酮M‐PP 改性聚丙烯MPPO 改性聚苯醚MPS 改性聚苯乙烯MS 苯乙烯‐甲基丙烯酸甲酯树脂MSO 石油醚MTBE 甲基叔丁基醚MTT 氯丁胶新型交联剂MWR 旋转模塑MXD‐10/6 醇溶三元共聚尼龙MXDP 间苯二甲基二胺OBP 邻苯二甲酸辛苄酯ODA 己二酸异辛癸酯ODPP 磷酸辛二苯酯OIDD 邻苯二甲酸正辛异癸酯OPP 定向聚丙烯(薄膜)OPS 定向聚苯乙烯(薄膜)OPVC 正向聚氯乙烯OT 气熔胶 PA 聚酰胺(尼龙)PA‐1010 聚癸二酸癸二胺(尼龙1010)PA‐11 聚十一酰胺(尼龙11)PA‐12 聚十二酰胺(尼龙12)PA‐6 聚己内酰胺(尼龙6)PA‐610 聚癸二酰乙二胺(尼龙610)PA‐612 聚十二烷二酰乙二胺(尼龙612)PA‐66 聚己二酸己二胺(尼龙66)PA‐8 聚辛酰胺(尼龙8)PA‐9 聚9‐氨基壬酸(尼龙9)PAA 聚丙烯酸PAAS 水质稳定剂PABM 聚氨基双马来酰亚胺PAC 聚氯化铝PAEK 聚芳基醚酮PAI 聚酰胺‐酰亚胺PAM 聚丙烯酰胺PAMBA 抗血纤溶芳酸PAMS 聚α－甲基苯乙烯PAN 聚丙烯腈PAP 对氨基苯酚PAPA 聚壬二酐PAPI 多亚甲基多苯基异氰酸酯PAR 聚芳酰胺PAR 聚芳酯(双酚A 型)PAS 聚芳砜(聚芳基硫醚)PB 聚丁二烯‐［1，3］PBAN 聚(丁二烯‐丙烯腈)PBI 聚苯并咪唑PBMA 聚甲基丙烯酸正丁酯PBN 聚萘二酸丁醇酯PBR 丙烯‐丁二烯橡胶PBS 聚(丁二烯‐苯乙烯)PBS 聚(丁二烯‐苯乙烯)PBT 聚对苯二甲酸丁二酯PC 聚碳酸酯PC/ABS 聚碳酸酯/ABS 树脂共混合金PC/PBT 聚碳酸酯/聚对苯二甲酸丁二醇酯弹性体共混合金PCD 聚羰二酰亚胺PCDT 聚(1，4‐环己烯二亚甲基对苯二甲酸酯) PCE 四氯乙烯 PCMX 对氯间二甲酚PCT 聚对苯二甲酸环己烷对二甲醇酯PCT 聚己内酰胺PCTEE 聚三氟氯乙烯PD 二羟基聚醚PDAIP 聚间苯二甲酸二烯丙酯PDAP 聚对苯二甲酸二烯丙酯PDMS 聚二甲基硅氧烷PE PEA 聚丙烯酸酯PEAM 苯乙烯型聚乙烯均相离子交换膜PEC 氯化聚乙烯PECM 苯乙烯型聚乙烯均相阳离子交换膜PEE 聚醚酯纤维PEEK 聚醚醚酮PEG 聚乙二醇PEHA 五乙撑六胺PEN 聚萘二酸乙二醇酯PEO 聚环氧乙烷PEOK 聚氧化乙烯PEP 对‐乙基苯酚聚全氟乙丙烯薄膜PES 聚苯醚砜PET 聚对苯二甲酸乙二酯PETE 涤纶长丝PETP 聚对苯二甲酸乙二醇酯PF 酚醛树脂PF/PA 尼龙改性酚醛压塑粉PF/PVC 聚氯乙烯改性酚醛压塑粉PFA 全氟烷氧基树脂PFG 聚乙二醇PFS 聚合硫酸铁PG 丙二醇PGEEA 乙二醇(甲)乙醚醋酸酯PGL 环氧灌封料PH 六羟基聚醚PHEMA 聚(甲基丙烯酸‐2‐羟乙酯) PHP 水解聚丙烯酸胺PI 聚异戊二稀PIB 聚异丁烯PIBO 聚氧化异丁烯PIC 聚异三聚氰酸酯PIEE 聚四氟乙烯PIR 聚三聚氰酸酯PL 丙烯PLD 防老剂4030PLME 1：1 型十二(烷)酸单异丙醇酰胺PMA 聚丙烯酸甲酯PMAC 聚甲氧基缩醛PMAN 聚甲基丙烯腈PMCA 聚α‐氧化丙烯酸甲酯PMDETA 五甲基二乙烯基三胺PMI 聚甲基丙烯酰亚胺PMMA 聚甲基丙烯酸甲酯(有机玻璃) PMMI 聚均苯四甲酰亚胺PMP 聚4‐甲基戊烯‐1PNT 对硝基甲苯PO 环氧乙烷POA 聚己内酰胺纤维POF 有机光纤POM 聚甲醛POP 对辛基苯酚POR 环氧丙烷橡胶PP 聚丙烯PPA 聚己二酸丙二醇酯PPB 溴代十五烷基吡啶PPC 氯化聚丙烯PPD 防老剂4020PPG 聚醚PPO 聚苯醚(聚2，6‐二甲基苯醚) PPOX 聚环氧丙烷PPS 聚苯硫醚PPSU 聚苯砜(聚芳碱)PR 聚酯PROT 蛋白质纤维PS 聚苯乙烯PSAN 聚苯乙烯‐丙烯腈共聚物PSB 聚苯乙烯‐丁二烯共聚物PSF(PSU) 聚砜PSI 聚甲基苯基硅氧烷PST 聚苯乙烯纤维PT 甲苯PTA 精对苯二甲酸PTBP 对特丁基苯酚PTEE 聚四氟乙烯PTMEG 聚醚二醇PTMG 聚四氢呋喃醚二醇PTP 聚对苯二甲酸酯PTX 苯(甲苯、二甲苯)PU 聚氨酯(聚氨基甲酸酯)PVA 聚乙烯醇PVAC 聚醋酸乙烯乳液PVAL 乙烯醇系纤维PVB 聚乙烯醇缩丁醛PVC 聚氯乙烯PVCA 聚氯乙烯醋酸酯PVCC 氯化聚氯乙烯PVDC 聚偏二氯乙烯PVDF 聚偏二氟乙烯PVE 聚乙烯基乙醚PVF 聚氟乙烯PVFM 聚乙烯醇缩甲醛PVI 聚乙烯异丁醚PVK 聚乙烯基咔唑PVM 聚烯基甲醚PVP 聚乙烯基吡咯烷酮PX 二甲苯PXL 对二甲苯PZ 二甲基二硫代氨基甲酸锌RE 橡胶粘合剂RF 间苯二酚‐甲醛树脂RFL 间苯二酚‐甲醛乳胶RP 增强塑料RX 橡胶软化剂S/MS 苯乙烯‐α‐甲基苯乙烯共聚物SAN 苯乙烯‐丙烯腈共聚物SAS 仲烷基磺酸钠SB 苯乙烯‐丁二烯共聚物SBR 丁苯橡胶SBS 苯乙烯‐丁二烯‐苯乙烯嵌段共聚物SC 硅橡胶气调织物膜SDDC N，N‐二甲基硫代氨基甲酸钠SE 磺乙基纤维素SGA 丙烯酸酯胶SI 聚硅氧烷SIS 苯乙烯‐异戊二烯‐苯乙烯嵌段共聚物SIS/SEBS 苯乙烯‐乙烯‐丁二烯‐苯乙烯共聚物SM 苯乙烯SMA 苯乙烯‐顺丁烯二酸酐共聚物SPP ：间规聚苯乙烯SPVC 悬浮法聚氯乙烯SR 合成橡胶ST 矿物纤维TAC 三聚氰酸三烯丙酯TAME 甲基叔戊基醚TAP 磷酸三烯丙酯TBE 四溴乙烷TBP 磷酸三丁酯TCA 三醋酸纤维素TCCA 三氯异氰脲酸TCEF 磷酸三氯乙酯TCF 磷酸三甲酚酯TCPP 磷酸三氯丙酯TDI 甲苯二异氰酸酯TEA 三乙胺TEAE 三乙氨基乙基纤维素TEDA 三乙二胺TEFC 三氟氯乙烯TEP 磷酸三乙酯TFE 四氟乙烯THF 四氢呋喃TLCP 热散液晶聚酯TMP 三羟甲基丙烷TMPD 三甲基戊二醇TMTD 二硫化四甲基秋兰姆(硫化促进剂TT) TNP 三壬基苯基亚磷酸酯TPA 对苯二甲酸TPE 磷酸三苯酯TPS 韧性聚苯乙烯TPU 热塑性聚氨酯树脂TR 聚硫橡胶TRPP 纤维增强聚丙烯TR‐RFT 纤维增强聚对苯二甲酸丁二醇酯TRTP 纤维增强热塑性塑料TTP 磷酸二甲苯酯U 脲 UF 脲甲醛树脂UHMWPE 超高分子量聚乙烯UP 不饱和聚酯VAC 醋酸乙烯酯VAE 乙烯‐醋酸乙烯共聚物VAM 醋酸乙烯VAMA 醋酸乙烯‐顺丁烯二酐共聚物VC 氯乙烯VC/CDC 氯乙烯/偏二氯乙烯共聚物VC/E 氯乙烯/乙烯共聚物VC/E/MA 氯乙烯/乙烯/丙烯酸甲酯共聚物VC/E/VAC 氯乙烯/乙烯/醋酸乙烯酯共聚物VC/MA 氯乙烯/丙烯酸甲酯共聚物VC/MMA 氯乙烯/甲基丙烯酸甲酯共聚物VC/OA 氯乙烯/丙烯酸辛酯共聚物VC/VAC 氯乙烯/醋酸乙烯酯共聚物VCM 氯乙烯(单体)VCP 氯乙烯‐丙烯共聚物VCS 丙烯腈‐氯化聚乙烯‐苯乙烯共聚物VDC 偏二氯乙烯VPC 硫化聚乙烯VTPS 特种橡胶偶联剂WF 新型橡塑填料WP 织物涂层胶WRS 聚苯乙烯球形细粒XF 二甲苯‐甲醛树脂XMC 复合材料YH 改性氯丁胶YM 聚丙烯酸酯压敏胶乳YWG 液相色谱无定型微粒硅胶ZE 玉米纤维ZH 溶剂型氯化天然橡胶胶粘剂ZN 粉状脲醛树脂胶。

SPS-45-GB-EBZ-CDC中文资料

3
LUMNDS1803-Jan0908 Rev 0.0
元器件交易网
120km SFP Bi-Directional Transceiver Preliminary
SPS-45-GB-EBZ-CDC
EEPROM Serial ID Name of Field Description of Field Address 20 21 22 23 24 Vendor Name SFPVendor name (ASCII) 25 26 27 28 29 30 37 Vendor OUI IEEE vendor OUI code for Luminent Inc. 38 39 40 41 42 43 44 45 Vendor P/N Part number in ASCII, e.g. SPS-45-GB-EBZ-CDC 46 47 48 49 50 51 52 Hex 4C 55 4D 49 4E 45 4E 54 4F 49 43 00 06 B5 53 50 53 34 35 47 42 45 42 5A 43 44 43 S P S 4 5 G B E B Z C D C ASCII L U M I N E N T O I C
Timing and Electrical Parameter Tx Disable Negate Time Tx Disable Assert Time Time to Initialize, Including Reset of Tx Fault Tx Fault Assert Time Tx Disable to Reset LOS Assert Time LOS De-Assert Time Serial ID Clock Rate RX_LOS Voltage (High) RX_LOS Voltage (Low) LOS Output Voltage-Fault LOS Output Voltage-Normal MOD_DEF (0:2)-High MOD_DEF (0:2)-Low Symbol t_on t_off t_init t_fault t_reset t_loss_on t_loss_off f_serial_clock Rx_LOSH RX_LOSL VLOS fault VLOS normal Vh VI Min 10 2 2 Vee 2 Vee Typical Max 1 10 300 100 100 100 100 Vcc 0.8 Vcc Vee + 0.5 Vcc Vee + 0.5 Unit ms µs ms µs µs µs µs kHz V V V V V V

PDP显示器技术培训资料

DN DN P P2 D D P P1 P1 SS SS D P3 P3 SS3 C3 C6 H3
HX H5 DS HX HDE HL C1 C7 V3
功能电源,将插座电压转换为工作电压风扇驱动屏驱动控制, 视频信号处理（变为子场）
H3 C8
C2
C5 V2 V1
电路板ＳＣＳＵ、ＳＤ功能扫描驱动屏驱动的扫描波形输出
Yes Yes Yes Yes Yes Yes 仅58/65PF12CK可用遥控器设置 Yes Yes 仅85/103PF12C
图像放大功能多屏幕/图像放大的亮度一致功能记忆功能
（图像调整菜单）
PH12：Yes 仅多屏幕 PD12：No No Yes 可用遥控器设置 Yes Yes No
新新新新
SC
SS3 C3 H3 S1
SD
V2 V1
电路板 P(MULTI) P（SUS) PB ＤＤＮＤＳＨDE ＨL ＨＸ功能电源,将插座电压转换为工作电压电路板ＳＣ功能扫描驱动
风扇驱动屏驱动控制, 视频信号处理（变为子场）视频信号处理（A/D转换, OSD发生器、格式、IP转换器）输入切换, 音频信号处理插槽块（ DVI＝TY-FB11DD ）插槽块（LAN＋分量输入） PC输入
3. PDP屏驱动 3. PDP屏驱动
16
3-1. PDP屏结构
前玻璃
扫描电极维持电极
后玻璃
（数据电极）
数据驱动 IC
17
3-2. PDP屏驱动脉冲
数据脉冲
数据脉冲
维持脉冲
扫描脉冲
扫描脉冲
1个像素
维持脉冲
初始化
地址写入

PSPT-45A中文资料

AC/DC Power SupplyFEATURES• 2 Year Warranty• 100% Full Load Burn-In Test• Universal AC Input/ Full Range• Low Leakage Current < 0.75mA• Cooling by Free Air Convection• Fixed Switching Frequency at 65KHz• Short Circuit, Overload, and Over Voltage ProtectedSPECIFICATIONS:PSPT45 SeriesAll specifications are based on 25o C, Nominal Input Voltage, and Maximum Output Current unless otherwise noted.We reserve the right to change specifications based on technological advances.INPUT SPECIFICATIONSInput Voltage 90 – 264VAC (127 – 370VDC)Input Frequency 47 ~ 440HzAC Current (typical) 1A @ 115VAC 0.7A @ 230VACInrush Current 15A @ 115VAC cold start 30A @ 230VAC cold start.Leakage Current < 0.75mAOUTPUT SPECIFICATIONSOutput Voltage See TableOutput Voltage Tolerance (See Note 3) CH 1: ±4% CH.2: ±7% CH 3: ±5%Voltage Adjustment Range CH1: 4.75 ~ 5.5VOutput Power (max) Rated output power for convection; 52W with 18CFM min. forced air.Line Regulation CH 1: ±1% CH.2: ±2% CH 3: ±1%Load Regulation CH 1: ±3% CH.2: ±4% CH 3: ±1%Output Current See TableRipple & Noise (See Note 2) See tableSetup, Rise Time 800ms, 20ms at full loadHold Up Time 60ms at full loadTemperature Coefficient ±0.04%/°C (0~50°C) on +5V output.PROTECTIONOver Voltage Protection CH.1: 5.75 ~ 6.75VDCProtection Type: Hiccup mode, recovers automatically after fault condition is removed.Overload Protection 53 ~ 75W rated output power.Protection Type: Hiccup mode, recovers automatically after fault condition is removed.GENERAL SPECIFICATIONSSwitching Frequency (fixed) 65KHzEfficiency (typical) 75%Withstand Voltage 3KVAC (input to output), 1.5KVAC (input to FG), 0.5KVAC (output to FG). All for one minute. Isolation Resistance 100MΩ / 500VDC (input to output, input to FG, output to FG)ENVIRONMENTAL SPECIFICATIONSWorkingTemperature -10°C to +60°C (refer to output load derating curve)Storage Temperature -20°C to +85°CWorking Humidity (non-condensing) 20% ~ 90% RH non-condensingStorage Humidity (non-condensing) 10% ~ 95% RHVibration 10~500Hz, 2G 10min./1cycle, Period for 60 minutes each along X, Y, and Z axes.MTBF 288,100 hours min. MIL-HDBK-217 (25°C)PHYSICAL SPECIFICATIONSWeight 28 oz.Dimensions 127(L) x 76(W) x 28(H) mmWarranty 2 yearsSAFETY & EMCSafety Standards UL60950-1, TUV EN60950-1 ApprovedEMI Conduction and Radiation Compliance to EN55022 (CISPR22) Class BHarmonic Current Compliance to EN61000-3-2,3EMS Immunity Compliance to EN61000-4-2,3,4,5,6,8,11; ENV50204, EN55024, Light industry level, criteria A.AC/DC Power SupplyOUTPUT VOLTAGE / CURRENT RATING CHARTModelInput VoltageOutput VoltageOutput Current RangeRatedOutput CurrentRipple &Noise Output Power Channel 1 5 VDC 0.4 ~ 5A 3A 50mVp-p Channel 2 12 VDC 0.2 ~ 2.5A 2A 120mVp-p PSPT-45AChannel 3 -5 VDC 0 ~ 0.5A 0.3A 50mVp-p 40.5WChannel 1 5 VDC 0.4 ~ 5A 3A 50mVp-p Channel 2 12 VDC 0.2 ~ 2.5A 2A 120mVp-p PSPT-45BChannel 3 -12 VDC 0 ~ 0.5A 0.3A 100mVp-p 42.6WChannel 1 5 VDC 0.4 ~ 5A 3A 50mVp-p Channel 2 15 VDC 0.2 ~ 2.3A 1.6A 120mVp-p PSPT-45C Channel 390~264 VAC(127~370 VDC)-15 VDC0 ~ 0.5A0.3A100mVp-p43.5WNOTES1. All parameters not specially mentioned are measured at 230VAC input, rated load, and 25°C ambient temperature.2. Ripple & noise are measured at 20MHz using a 12" twisted pair-wire terminated with 0.1uF & 47uF capacitors in parallel .3. Tolerance: includes set up tolerance, line regulation, and load regulation.4. The power supply is considered a component, which will be installed into final equipment. The final equipment must be re- confirmed that it still meets EMC directives.5. Mounting holes M1 and M2 should be grounded for EMI purposes.BLOCK DIAGRAMDERATING CURVE STATIC CHARACTERISTICS (B)fosc: 65KHzAC/DC Power Supply MECHANICAL DRAWINGUnit: mmAC INPUT CONNECTOR (CN1)Pin. No Assignment1 AC/N2 AC/LDC OUTPUT CONNECTOR (CN2)Pin No. Assignment1 +V 2,3 +5V 4,5 COM6 -V。

PHD45N03LT中文资料

Tj = 25 ˚C to 175˚C Tj = 25 ˚C to 175˚C; RGS = 20 kΩ
Tmb = 25 ˚C; VGS = 10 V Tmb = 100 ˚C; VGS = 10 V Tmb = 25 ˚C Tmb = 25 ˚C
MIN.
- 55
MAX.
30 30 ± 15 45 33 180 86 175
- 20 24 mΩ
- 16 21 mΩ
-
- 45 mΩ
8 27
-
S
- 0.05 10 µA
-
- 500 µA
- 10 100 nA
- 23 - nC
-
7
- nC
- 10 - nC
- 12 20 ns - 80 130 ns - 35 60 ns - 31 45 ns
- 3.5 - nH - 4.5 - nH
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
Tj = 25˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
IS
Continuous source current
(body diode)
Drain-source on-state resistance
Forward transconductance Zero gate voltage drain current Gate source leakage current
Total gate charge Gate-source charge Gate-drain (Miller) charge

医学英语缩写及简写

临床常见疾病名称英汉对照缩写及简写：Addison病：原发性慢性肾上腺皮质功能减退症Af:心房颤动AF:心房扑动AGN：急性肾小球肾炎AIDS:获得性免疫缺陷综合征(艾滋病)ALL:急性淋巴细胞性白血病Alzheimer病(AD)：阿尔茨海默病(老年痴呆症)AML:急性髓细胞性白血病Arnold-Chiari畸形：小脑扁桃体下移畸形(阿－卡畸形) ARDS:急性呼吸窘迫综合征ARF:急性肾衰竭AS：强直性脊柱炎ASD:房间隔缺损AVM:动静脉畸形Binswanger病(BD)：皮层下动脉硬化性脑病(SAE)Budd-Chiari Syndrome:布加综合征BPH:良性前列腺增生CCF:颈动脉海绵窦瘘CGN：慢性肾小球肾炎CHD:冠状动脉粥样硬化性心脏病(冠心病)CIN：慢性间质性肾炎CKD：慢性肾脏疾病CLL:慢性淋巴细胞性白血病CML:慢性髓细胞性白血病Colles’fracture:柯莱斯骨折COPD：慢性阻塞性肺疾病CRF:慢性肾衰竭Crohn病：节段性肠炎或肉芽肿性肠炎CTD：结缔组织病DCM:扩张性心肌病DDH:先天性髋关节脱位DIC:弥漫性血管内凝血DM:糖尿病DN：糖尿病肾病Good-Pasture综合征：肺出血－肾炎综合征Graves病(GD)：毒性弥漫性甲状腺肿(Basedow病)Fahr’病:特发性家族性脑血管亚铁钙沉着症EH:高血压病(原发性高血压)FNH:局灶性结节增生EP:癫痫HBV-GN：慢性乙型肝炎相关性肾炎HCC:原发性肝细胞癌HCM:肥厚性心肌病HD:霍奇金病HIE：缺氧缺血性脑病HL:霍奇金淋巴瘤HOA:肥大性关节病IBD：炎症性肠病ITP:特发性血小板减少性紫癜JAS：幼年强直性脊柱炎JRA:幼年类风湿性关节炎Kawasaki病：川崎病或MCLS(皮肤粘膜淋巴结综合征) Mirrizzi Syndrome(MS)：米利兹综合征Mkulicy Syndrome：米古利兹综合征(慢性无痛性腮腺炎) MM:多发性骨髓瘤MS:多发性硬化MODS:多器官功能不全综合征Moyamoya disease:脑底异常血管网症(烟雾病)NF:神经纤维瘤病NHD: 非霍奇金病NHL: 非霍奇金淋巴瘤NS:肾病综合征OA:骨性关节炎Paget病：畸形性骨炎PAVM：肺动静脉畸形Parkinson病(PD)：帕金森氏病PDA:动脉导管未闭P-J综合征:黏膜黑斑-息肉综合征(黑斑息肉病)PsA：银屑病关节炎PSVT:阵发性室上性心动过速RCC:肾细胞癌RCM:限制性心肌病RHD:风湿性心脏病RS(Reiter综合征)：又称反应性关节炎(ReA)SAH:蛛网膜下腔出血SCLC:小细胞肺癌SLE:系统性红斑狼疮SIRS:全身炎症反应综合征SpA：脊柱关节病SPA: 类风湿性脊椎炎SSSS:葡萄球菌烫伤样皮肤综合征或葡萄球菌性烧伤皮肤综合征Sturge-Weber综合征：脑颜面血管瘤病TB:结核病TIA:短暂性脑缺血发作TS:结节性硬化又称Bourneville病(神经皮肤综合症) VSD:室间隔缺损VT：室性心动过速Wilson病:肝豆状核变性常见检查及手术名称中英文对照：CABG:冠状动脉旁路移植术ESWL：体外冲击波碎石术ENBD:经内镜鼻胆管引流术ERCP：内窥镜逆行胰胆管造影EVL:肝硬化食管静脉曲张出血内镜下套扎治疗EST:内镜下十二指肠乳头括约肌切开术LC：腹腔镜胆囊切除术LS:腹腔镜脾切除术KUB:泌尿系平片(肾、输尿管及膀胱区平片) IVP:静脉肾盂造影术IVU：静脉尿路造影术PBPV：经皮穿刺球囊肺动脉瓣成形术PTC:经皮肝穿刺胆道造影术PTCA：经皮穿刺腔内冠状动脉成形术TCD:经颅多普勒超声。

BD45295中文资料

ApplicationsVOLTAGE DETECTOR IC with counter timerBD45XXXG BD46XXXGBD45XXXG and BD46XXXG are series of high-accuracy detection voltage and low current consumption VOLTAGE DETECTOR ICs adopting CMOS process. New lineup of 156 types with delay time circuit have developed. Delay time is fixed in the IC due to the built-in counter timer to require no external capacitor. Total 156 types of VOLTAGE DETECTOR ICs including BD45XXXG series (Nch open drain output) and BD46XXXG series (CMOS output), each of which has 26 kinds in every 0.1V step (2.3~4.8V) and three kinds of delay time (50msec, 100msec, 200msec) have developed.Every kind of appliances with microcontroller and logic circuitFeatures1) Built-in delay time circuit(Fixed delay time by the built-in ±10% of high-accuracy counter timer)2) No external capacitor for setting delay time required 3) 3 kinds of delay time: 50msec (Typ.)(BD45XX5G,BD46XX5G) 100msec (Typ.)(BD45XX1G,BD46XX1G) 200msec (Typ.)(BD45XX2G,BD46XX2G)4) Detection voltage: 2.3V ~ 4.8V 0.1V step 5) High-accuracy detection voltage: ±1.0% 6) Ultra low current consumption: 0.85µA typ.7) Output circuit: Nch open drain (BD45XXXG) 8) Package: SSOP5(SMP5C2)9) Operating temperature range: -40°C ~ +105°C BD45XXXGBD46XXXGPin No.SSOP5ERSubGNDV OUTV DD12345 Application CircuitCMOS (BD46XXXG)Absolute Maximum Ratings (Ta=25˚C)Electrical characteristics (1 ˚C ˚C∗1 This value is guranteed at Ta=25˚C.Note) R L is not necessary for CMOS output type.Note) Please refer to the detection voltage of Line-up table.Characteristic diagram and Measurement circuitV DET ±0.5VΩV DET ±0.5VΩTa (°C)t P L H (m s e c )-Ta (°C)t P L H [µs e c ]-Output delay time "L → H"Output delay time "H → L"V DD (V)IDD(µA)V DD (V)VOUT(V)(mA)V DS (V)IOLTiming waveformV DDTa (˚C)VDET(V)VΩVΩVV DS (V)IDS(mA)V DDV DDV OUTERV DET0VVVVV DET+∆VI/O characteristic Detection voltagePart number and Marking of samplesBD45485BD45475BD45465BD45455BD45445BD45435BD45425BD45415BD45405BD45395BD45385BD45375BD45365BD45355BD45345BD45335BD45325BD45315BD45305BD45295BD45285BD45275BD45265BD45255BD45245T0T1T2T3T4T5T6T7T8T9TA TB TC TD TE TF TG TH TJ TK TL TM TN TP TQ TRTS TT TU TV TW TX TY TZ U0U1U2U3U4U5U6U7U8U9UA UB UC UD UE UF UG UHUJ UK UL UM UN UP UQ UR US UT UU UV UW UX UY UZ V0V1V2V3V4V5V6V7V8V94.8V 4.7V 4.6V 4.5V 4.4V 4.3V 4.2V 4.1V 4.0V 3.9V 3.8V 3.7V 3.6V 3.5V 3.4V 3.3V 3.2V 3.1V 3.0V 2.9V 2.8V 2.7V 2.6V 2.5V 2.4V 2.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 VB VC VD VE VF VG VH VJ VK VL VM VN VP VQ VR VS VT VU VV VW VX VY VZ W0W1W2W3W4W5W6W7W8W9WA WB WC WD WE WF WG WH WJ WK WL WM WN WP WQ WR WS WTWU WV WW WX WY WZ X0X1X2X3X4X5X6X7X8X9XA XB XC XD XE XF XG XH XJ XKBD46235BD46481BD46471BD46461BD46451BD46441BD46431BD46421BD46411BD46401BD46391BD46381BD46371BD46361BD46351BD46341BD46331BD46321BD46311BD46301BD46291BD46281BD46271BD46261BD46251BD46241BD46231BD46482BD46472BD46462BD46452BD46442BD46432BD46422BD46412BD46402BD46392BD46382BD46372BD46362BD46352BD46342BD46332BD46322BD46312BD46302BD46292BD46282BD46272BD46262BD46252BD46242BD46232(SMP5C2)Marking Voltage Part No.Marking Part No.Marking Part No.Marking Part No.Marking Part No.Marking Part No.Line-up。

常用管件管道配件中英文对照

常用管件管道配件中英文对照１.管件系列1。

1>>P 管子Pipe1。

2>> EL 弯头Elbow1。

2.1〉ELL 长半径弯头Long radius elbow1。

2.2> ELS 短半径弯头Short radius elbow1.2。

3〉MEL 斜接弯头（虾米腰弯头) Mitre elbow1。

2.4〉REL 异径弯头Reducing elbow1。

3>〉T 三通Tee1。

3.1> LT 斜三通Lateral tee1.3.2〉RT 异径三通Reducing tee1.3.3〉 CROSS 四通1。

4〉〉R 异径管接头(大小头）Reducer1。

4.1> CR 同心异径管接头（同心大小头）Concentric reducer 1。

4。

2〉ER 偏心异径管接头(偏心大小头）Eccentric reducer 1。

5>> CPL 管箍Coupling1.5。

1〉FCPL 双头管箍Full coupling1.5.2〉HCPL 单头管箍Half coupling1.5.3〉RCPL 异径管箍Reducing coupling1.6>〉BU 内外螺纹接头Bushing1.7〉〉UN 活接头Union1。

8>〉HC 软管接头Hose coupler1。

9〉〉SE 翻边短节Stub end1。

10>〉NIP 短节Pipe nipple or straight nipple1.10。

1>SNIP 异径短节Swaged nipple1。

11>〉CP 管帽(封头）Cap1.12>> PL 管堵（丝堵）Plug1.13〉〉BLK 盲板Blank1。

13.1> SB 8字盲板Spectacle blind1。

14>〉PAD 补强板Reinforcing pad1.15>焊接支管台 WELDOLET1。

PMBTA45,215;中文规格书,Datasheet资料

4 of 13
NXP Semiconductors
PMBTA45
500 V, 150 mA NPN high-voltage low VCEsat (BISS) transistor
7. Characteristics
Table 7. Characteristics Tamb = 25 °C unless otherwise specified.
Typ Max Unit
-
100 nA
-
10
μA
-
100 nA
-
100 nA
100 -
100 -
60
75
65
90
0.75 0.9
35
-
4
-
200 -
80
-
2700 -
2780 -
3400 -
800 -
4200 -
mV mV V
MHz
pF
pF
ns ns ns ns ns ns
PMBTA45_2
Product data sheet
[1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China
Marking code[1] LK*
Version SOT23
PMBTA45_2
Product data sheet
2. Pinning information
Table 2. Pin 1 2 3
Pinning Description base emitter collector
Simplified outline Graphic symbol

454FTB系列100525中文版

应用场合
■ 工业气体的流量测量 ■ 美国EPA（环保局）颁布的大气污染法规中烟道气的流量测量 ■ 通风空气流量和化解过程中废气流量测量 ■ 溶剂回收系统流量测量 ■ 水泥厂生产过程中气体流量测量 ■ 压缩空气流量测量 ■ 半导体工艺气体测量 ■ 美国能源部空气取样
■ 助燃气体流量测量 ■ 火炬气流量测量 ■ 焚烧炉烟气流量测量 ■ VOC烟道气流量测量 ■ 燃煤锅炉中助燃空气流量测量 ■ 天然气和大多数的工业气体流量测量 ■ 核电站 ■ O.E.M.应用
传感器材质：
标准配置：哈氏合金C-276；可选配： (1) 哈氏合金C-276材质传感器上涂氮化铬，更加耐磨损 (2) 在哈氏合金C-276传感器和传感器支撑杆上涂PTFE，耐腐蚀但涂PTFE的HHT传感器：最高温度260℃
传感器支撑杆材质
316L 不锈钢, 可选配哈氏合金C-276；
重复性： 0.25% 流速响应时间：
气体标定
用户可选择实验室标定或相关气体标定。Kurz（S） 400D 型 NIST 可追踪风洞测量仪可用于空气标定。
传感器的保护
6
454FTB 的电路包括防止因传感器，电线或器件损坏而造成温度过高现象的保护电路。在零流量时，我们的传感器不会过热，这与大部分竞争对手的设备不同，这是因为我们有与众不同的恒温传感器的控制方法和功率限制设计。
对于每种质量流量计型号pn编号和每种气体类型的基准流速v是指在标准状态下的最大流速方程式气体类型drp方程式drp10空气氮气氧气氩气1059drp12drp1353drp18drp30drp1000基本代码表使用定义说明方程式drppppsxtstp方程式在表2中所列的基准流速sfpm英制单位nmps公制单位vpht高温工作型号40hht超高温工作型号40fd2快速双铠装全焊接结构速度和温度传感器直径0105传感器探头ni无火花型atexcsa认证xpfp防爆隔爆型csa和atex认证ta一体型传感器和变送器于一体ts分体型传感器和变送器分别独立安装间距可调气体组号和气体类型气体组号气体类型氢气11vmax对于某种工艺条件下特定气体的最大流速流量因子ts标准绝对温度537r77f460英制单位

45WPD充电器支持多种快充协议

45WPD充电器支持多种快充协议
Nexo 45W Power Delivery (PD)充电器是全球首支多种快充协议兼容的充电器，可以满足用户对各种设备充电的各种需求。

Nexo 45W PD充电器具有一流的性能，支持三种快充协议，可以快速充电智能手机、平板电脑和许多其他设备，即使在较低电压条件下也能给设备提供最大功率。

除了性能突出之外，Nexo 45W PD充电器也非常灵活。

它利用最新技术支持快充协议，可以适用于不同的设备，以及不同的充电通道，包括USB-C和USB-A充电口。

它的充电时间比传统充电器快3倍，可以在不到3小时内充满电量。

Nexo 45W PD充电器还带有保护功能，可以防止电压抖动，保护设备免受损害。

Nexo 45W PD充电器拥有紧凑的设计，充电口的密封防水，可以防止水滴渗透进入电路系统，使设备更加安全可靠。

此外，Nexo 45W PD充电器的外壳选择灵活，可以根据用户的需要选择金属材质、铝材质、塑料材质或其他材料，以符合各种设计要求。

Nexo 45W PD充电器易于使用，可以满足大多数设备的充电需求，是你的生活中最佳的搭档，无论是旅行还是工作，都能为您带来更方便的生活体验。

AT45DB642D资料

Features Array•Single 2.7V - 3.6V Supply•Dual-interface Architecture–RapidS™ Serial Interface: 66 MHz Maximum Clock Frequency SPI Compatible Modes 0 and 3–Rapid8™ 8-bit Interface: 50 MHz Maximum Clock Frequency •User Configurable Page Size–1024 Bytes per Page–1056 Bytes per Page•Page Program Operation–Intelligent Programming Operation–8192 Pages (1024/1056 Bytes/Page) Main Memory•Flexible Erase Options–Page Erase (1 Kbyte)–Block Erase (8 Kbytes)–Sector Erase (256 Kbytes)–Chip Erase (64 Mbits)•Two SRAM Data Buffers (1024/1056 Bytes)–Allows Receiving of Data while Reprogramming the Flash Array •Continuous Read Capability through Entire Array–Ideal for Code Shadowing Applications•Low-power Dissipation–10 mA Active Read Current Typical – Serial Interface–10 mA Active Read Current Typical – 8-bit Interface–25 µA Standby Current Typical–9 µA Deep Power Down Typical•Hardware and Software Data Protection Features–Individual Sector•Permanent Sector Lockdown for Secure Code and Data Storage –Individual Sector•Security: 128-byte Security Register–64-byte User Programmable Space–Unique 64-byte Device Identifier•JEDEC Standard Manufacturer and Device ID Read•100,000 Program/Erase Cycles Per Page Minimum•Data Retention – 20 Years•Green (Pb/Halide-free/RoHS Compliant) Packaging Options •Temperature Range–Industrial: -40°C to +85°C23542F–DFLASH–09/06AT45DB642D1.DescriptionThe AT45DB642D is a 2.7-volt, dual-interface sequential access Flash memory ideally suited for a wide variety of digital voice-, image-, program code- and data-storage applications. The AT45DB642D supports RapidS serial interface and Rapid8 8-bit interface. RapidS serial inter-face is SPI compatible for frequencies up to 66 MHz. The dual-interface allows a dedicated serial interface to be connected to a DSP and a dedicated 8-bit interface to be connected to a microcontroller or vice versa. However, the use of either interface is purely optional. Its 69,206,016 bits of memory are organized as 8,192 pages of 1,024 bytes (binary page size) or 1,056 bytes (standard DataFlash page size) each. In addition to the main memory, the AT45DB642D also contains two SRAM buffers of 1,024 (binary buffer size) bytes/1,056 bytes (standard DataFlash buffer size) each. The buffers allow receiving of data while a page in the main Memory is being reprogrammed, as well as writing a continuous data stream. EEPROM emulation (bit or byte alterability) is easily handled with a self-contained three step read-modify-write operation. Unlike conventional Flash memories that are accessed randomly with multiple address lines and a parallel interface, the DataFlash uses either a RapidS serial interface or a 8-bit Rapid8 interface to sequentially access its data. The simple sequential access dramatically reduces active pin count, facilitates hardware layout, increases system reliability, minimizes switching noise, and reduces package size. The device is optimized for use in many commercial and industrial applications where high-density, low-pin count, low-voltage and low-power are essential.To allow for simple in-system reprogrammability, the AT45DB642D does not require high input voltages for programming. The device operates from a single power supply, 2.7V to 3.6V, for both the program and read operations. The AT45DB642D is enabled through the chip select pin (CS) and accessed via a three-wire interface consisting of the Serial Input (SI), Serial Output (SO), and the Serial Clock (SCK), or an 8-bit interface consisting of the input/output pins (I/O7 -I/O0) and the clock pin (CLK).All programming and erase cycles are self-timed.33542F–DFLASH–09/06AT45DB642D2.Pin Configurations and PinoutsTable 2-1.Pin ConfigurationsSymbolName and FunctionAsserted StateTypeCS Chip Select: Asserting the CS pin selects the device. When the CS pin is deasserted, the device will be deselected and normally be placed in the standby mode (not Deep Power-Down mode), and the output pins (SO or I/O7 - I/O0) will be in a high-impedance state. When the device is deselected, data will not be accepted on the input pins (SI or I/O7 - I/O0).A high-to-low transition on the CS pin is required to start an operation, and a low-to-hightransition is required to end an operation. When ending an internally self-timed operation such as a program or erase cycle, the device will not enter the standby mode until the completion of the operation.Low InputSCK/CLK Serial Clock: This pin is used to provide a clock to the device and is used to control the flow of data to and from the device. Command, address, and input data present on the SI or I/O7 - I/O0 pins are always latched on the rising edge of SCK/CLK, while output data on the SO or I/O7 - I/O0 pins are always clocked out on the falling edge of SCK/CLK.–InputSI Serial Input: The SI pin is used to shift data into the device. The SI pin is used for all data input including command and address sequences. Data on the SI pin is always latched on the rising edge of SCK. If the SER/BYTE pin is always driven low, the SI pin should be a “no connect”.–InputSO Serial Output: The SO pin is used to shift data out from the device. Data on the SO pin is always clocked out on the falling edge of SCK. If the SER/BYTE pin is always driven low, the SO pin should be a “no connect”.–OutputI/O7 - I/O08-bit Input/Output: The I/O7-I/O0 pins are bidirectional and used to clock data into and out of the device. The I/O7-I/O0 pins are used for all data input, including opcodes and address sequences. The use of these pins is optional, and the pins should be treated as “no connect” if the SER/BYTE pin is not connected or if the SER/BYTE pin is always driven high externally.–Input/OutputWP Write Protect: When the WP pin is asserted, all sectors specified for protection by the Sector Protection Register will be protected against program and erase operations regardless of whether the Enable Sector Protection command has been issued or not. The WP pin functions independently of the software controlled protection method.If a program or erase command is issued to the device while the WP pin is asserted, the device will simply ignore the command and perform no operation. The device will return to the idle state once the CS pin has been deasserted. The Enable Sector Protection command and Sector Lockdown command, however, will be recognized by the device when the WP pin is asserted.The WP pin is internally pulled-high and may be left floating if hardware controlled protection will not be used. However, it is recommended that the WP pin also be externally connected to V CC whenever possible.Low InputRESET Reset: A low state on the reset pin (RESET) will terminate the operation in progress and reset the internal state machine to an idle state. The device will remain in the reset condition as long as a low level is present on the RESET pin. Normal operation can resume once the RESET pin is brought back to a high level.The device incorporates an internal power-on reset circuit, so there are no restrictions on the RESET pin during power-on sequences. If this pin and feature are not utilized it is recommended that the RESET pin be driven high externally.Low InputRDY/BUSY Ready/Busy: This open drain output pin will be driven low when the device is busy in aninternally self-timed operation. This pin, which is normally in a high state (through an external pull-up resistor), will be pulled low during programming/erase operations, compare operations, and page-to-buffer transfers.The busy status indicates that the Flash memory array and one of the buffers cannot be accessed; read and write operations to the other buffer can still be performed.–Output43542F–DFLASH–09/06AT45DB642DSER/BYTE Serial/8-bit Interface Control: The DataFlash may be configured to utilize either its serial port or 8-bit port through the use of the serial/8-bit control pin (SER/BYTE). When the SER/BYTE pin is held high, the serial port (SI and SO) of the DataFlash will be used for all data transfers, and the 8-bit port (I/O7-I/O0) will be in a high impedance state. Any data presented on the 8-bit port while SER/BYTE is held high will be ignored. When the SER/BYTE is held low, the 8-bit port will be used for all data transfers, and the SO pin of the serial port will be in a high impedance state. While SER/BYTE is low, any data presented on the SI pin will be ignored. Switching between the serial port and 8-bit port should only be done while the CS pin is high and the device is not busy in an internally self-timed operation.The SER/BYTE pin is internally pulled high; therefore, if the 8-bit port is never to be used, then connection of the SER/BYTE pin is not necessary. In addition, if the SER/BYTE pin is notconnected or if the SER/BYTE pin is always driven high externally, then the 8-bit input/output pins (I/O7-I/O0), the VCCP pin, and the GNDP pin should be treated as “no connect”.Low InputV CC Device Power Supply: The V CC pin is used to supply the source voltage to the device.Operations at invalid V CC voltages may produce spurious results and should not be attempted.–Power GNDGround: The ground reference for the power supply. GND should be connected to the system ground.–GroundV CCP8-bit Port Supply Voltage: The VCCP pin is used to supply power for the 8-bit input/output pins (I/O7-I/O0). The VCCP pin needs to be used if the 8-bit port is to be utilized; however, this pin should be treated as “no connect” if the SER/BYTE pin is not connected or if the SER/BYTE pin is always driven high externally.–PowerGNDP 8-bit Port Ground: The GNDP pin is used to provide ground for the 8-bit input/output pins (I/O7-I/O0). The GNDP pin needs to be used if the 8-bit port is to be utilized; however, this pin should be treated as “no connect” if the SER/BYTE pin is not connected or if the SER/BYTE pin is always driven high externally.–GroundTable 2-1.Pin Configurations (Continued)SymbolName and FunctionAsserted StateTypeFigure 2-1.TSOP Top View: Type 1Figure 2-2.DataFlash Card (1)Note: 1.See A T45DCB008D Datasheet.Figure 2-3.CASON Top View through Package53542F–DFLASH–09/06AT45DB642D3.Block Diagram4.Memory ArrayTo provide optimal flexibility, the memory array of the AT45DB642D is divided into three levels of granularity comprising of sectors, blocks, and pages. The “Memory Architecture Diagram” illus-trates the breakdown of each level and details the number of pages per sector and block. All program operations to the DataFlash occur on a page by page basis. The erase operations can be performed at the chip, sector, block or page level.Figure 4-1.Memory Architecture Diagram63542F–DFLASH–09/06AT45DB642D5.Device OperationThe device operation is controlled by instructions from the host processor. The list of instructions and their associated opcodes are contained in Table 15-1 on page 28 through Table 15-6 on page 31. A valid instruction starts with the falling edge of CS followed by the appropriate 8-bit gling the SCK/CLK pin controls the loading of the opcode and the desired buffer or main memory address location through either the SI (serial input) pin or the 8-bit input pins (I/O7-I/O0). All instructions, addresses, and data are transferred with the most significant bit (MSB) first.Buffer addressing for standard DataFlash page size (1056 bytes) is referenced in the datasheet using the terminology BFA10 - BFA0 to denote the 11 address bits required to designate a byte address within a buffer. Main memory addressing is referenced using the terminology PA12 -PA0 and BA10 - BA0, where PA12 - PA0 denotes the 13 address bits required to designate a page address and BA10 - BA0 denotes the 11 address bits required to designate a byte address within the page.For “Power of 2” binary page size (1024 bytes) the Buffer addressing is referenced in the datasheet using the conventional terminology BFA9 - BFA0 to denote the 10 address bits required to designate a byte address within a buffer. Main memory addressing is referenced using the terminology A22 - A0.6.Read CommandsBy specifying the appropriate opcode, data can be read from the main memory or from either one of the two SRAM data buffers. The DataFlash supports RapidS and Rapid8 protocols for Mode 0 and Mode 3. Please refer to the “Detailed Bit-level Read Timing” diagrams in this datasheet for details on the clock cycle sequences for each mode.6.1Continuous Array Read (Legacy Command: E8H): Up to 66 MHzBy supplying an initial starting address for the main memory array, the Continuous Array Read command can be utilized to sequentially read a continuous stream of data from the device by simply providing a clock signal; no additional addressing information or control signals need to be provided. The DataFlash incorporates an internal address counter that will automatically increment on every clock cycle, allowing one continuous read operation without the need of additional address sequences. To perform a continuous read from the standard DataFlash page size (1056 bytes), an opcode of E8H must be clocked into the device followed by three address bytes (which comprise the 24-bit page and byte address sequence) and a series of don’t care bytes (4 bytes if using the serial interface or 19 bytes if using the 8-bit interface). The first 13 bits (PA12-PA0) of the 24-bit address sequence specify which page of the main memory array to read, and the last 11 bits (BA10-BA0) of the 24-bit address sequence specify the starting byte address within the page. To perform a continuous read from the binary page size (1024 bytes),the opcode (E8H) must be clocked into the device followed by three address bytes and a series of don’t care bytes (4 bytes if using the serial interface, or 19 bytes if using the 8-bit interface).The first 13 bits (A22 - A10) of the 24-bits sequence specify which page of the main memory array to read, and the last 10 bits (A9 - A0) of the 24-bits address sequence specify the starting byte address within the page. The don’t care bytes that follow the address bytes are needed to initialize the read operation. Following the don’t care bytes, additional clock pulses on the SCK/CLK pin will result in data being output on either the SO (serial output) pin or the eight out-put pins (I/O7- I/O0).73542F–DFLASH–09/06AT45DB642DThe CS pin must remain low during the loading of the opcode, the address bytes, the don’t care bytes, and the reading of data. When the end of a page in main memory is reached during a Continuous Array Read, the device will continue reading at the beginning of the next page with no delays incurred during the page boundary crossover (the crossover from the end of one page to the beginning of the next page). When the last bit (or byte if using the 8-bit interface mode) in the main memory array has been read, the device will continue reading back at the beginning of the first page of memory. As with crossing over page boundaries, no delays will be incurred when wrapping around from the end of the array to the beginning of the array.pins (SO or I/O7-I/O0). The maximum SCK/CLK frequency allowable for the Continuous Array Read is defined by the f CAR1 specification. The Continuous Array Read bypasses both data buff-ers and leaves the contents of the buffers unchanged.6.2Continuous Array Read (High Frequency Mode: 0BH): Up to 66 MHzThis command can be used with the serial interface to read the main memory array sequentially in high speed mode for any clock frequency up to the maximum specified by f CAR1. To perform a an opcode 0BH must be clocked into the device followed by three address bytes and a dummy byte. The first 13 bits (PA12 - PA0) of the 24-bit address sequence specify which page of the main memory array to read, and the last 11 bits (BA10 - BA0) of the 24-bit address sequence specify the starting byte address within the page. To perform a continuous read with the page size set to 1024 bytes, the opcode, 0BH, must be clocked into the device followed by three address bytes (A22 - A0) and a dummy byte. Following the dummy byte, additional clock pulses on the SCK pin will result in data being output on the SO (serial output) pin.The CS pin must remain low during the loading of the opcode, the address bytes, and the read-ing of data. When the end of a page in the main memory is reached during a Continuous Array Read, the device will continue reading at the beginning of the next page with no delays incurred during the page boundary crossover (the crossover from the end of one page to the beginning of the next page). When the last bit in the main memory array has been read, the device will con-tinue reading back at the beginning of the first page of memory. As with crossing over page boundaries, no delays will be incurred when wrapping around from the end of the array to the beginning of the array. A low-to-high transition on the CS pin will terminate the read operation and tri-state the output pin (SO). The maximum SCK frequency allowable for the Continuous Array Read is defined by the f CAR1 specification. The Continuous Array Read bypasses both data buffers and leaves the contents of the buffers unchanged.6.3Continuous Array Read (Low Frequency Mode: 03H): Up to 33 MHzThis command can be used with the serial interface to read the main memory array sequentially without a dummy byte up to maximum frequencies specified by f CAR2. To perform a continuous read array with the page size set to 1056 bytes, the CS must first be asserted then an opcode,03H, must be clocked into the device followed by three address bytes (which comprise the 24-bit page and byte address sequence). The first 13 bits (PA12 - PA0) of the 24-bit address sequence specify which page of the main memory array to read, and the last 11 bits (BA10 - BA0) of the 24-bit address sequence specify the starting byte address within the page. To perform a contin-uous read with the page size set to 1024 bytes, the opcode, 03H, must be clocked into the device followed by three address bytes (A22 - A0). Following the address bytes, additional clock pulses on the SCK pin will result in data being output on the SO (serial output) pin.83542F–DFLASH–09/06AT45DB642DThe CS pin must remain low during the loading of the opcode, the address bytes, and the read-ing of data. When the end of a page in the main memory is reached during a Continuous Array Read, the device will continue reading at the beginning of the next page with no delays incurred during the page boundary crossover (the crossover from the end of one page to the beginning of the next page). When the last bit in the main memory array has been read, the device will con-tinue reading back at the beginning of the first page of memory. As with crossing over page boundaries, no delays will be incurred when wrapping around from the end of the array to the beginning of the array. A low-to-high transition on the CS pin will terminate the read operation and tri-state the output pin (SO). The Continuous Array Read bypasses both data buffers and leaves the contents of the buffers unchanged.6.4Main Memory Page ReadA main memory page read allows the user to read data directly from any one of the 8,192 pages in the main memory, bypassing both of the data buffers and leaving the contents of the buffers unchanged. To start a page read from the standard DataFlash page size (1056 bytes), an opcode of D2H must be clocked into the device followed by three address bytes (which comprise the 24-bit page and byte address sequence) and a series of don’t care bytes (4 bytes if using the serial interface or 19 bytes if using the 8-bit interface). The first 13 bits (PA12-PA0) of the 24-bit address sequence specify the page in main memory to be read, and the last 11 bits (BA10-BA0) of the 24-bit address sequence specify the starting byte address within that page. To start a page read from the binary page size (1024 bytes), the opcode D2H must be clocked into the device followed by three address bytes and a series of don’t care bytes (4 bytes if using the serial interface or 19 bytes if using the 8-bit interface). The first 13 bits (A22 - A10) of the 24-bits sequence specify which page of the main memory array to read, and the last 10 bits (A9 - A0) of the 24-bits address sequence specify the starting byte address within the page. The don’t care bytes that follow the address bytes are sent to initialize the read operation. Following the don’t care bytes, additional pulses on SCK/CLK result in data being output on either the SO (serial output) pin or the eight output pins (I/O7-I/O0). The CS pin must remain low during the loading of the opcode, the address bytes, the don’t care bytes, and the reading of data. When the end of a page in main memory is reached, the device will continue reading back at the beginning of the the output pins (SO or I/O7-I/O0). The maximum SCK/CLK frequency allowable for the Main Memory Page Read is defined by the f SCK specification. The Main Memory Page Read bypasses both data buffers and leaves the contents of the buffers unchanged.6.5Buffer ReadThe SRAM data buffers can be accessed independently from the main memory array, and utiliz-ing the Buffer Read Command allows data to be sequentially read directly from the buffers. In serial mode, four opcodes, D4H or D1H for buffer 1 and D6H or D3H for buffer 2 can be used for the Buffer Read Command. The use of each opcode depends on the maximum SCK frequency that will be used to read data from the buffer. The D4H and D6H opcode can be used at any SCK frequency up to the maximum specified by f CAR1. The D1H and D3H opcode can be used for lower frequency read operations up to the maximum specified by f CAR2.In 8-bit mode, two opcodes, 54H for buffer 1 and 56H for buffer 2 can be used for the Buffer Read Command. The two opcodes, 54H and 56H, can be used at any SCK frequency up to the maximum specified by f CAR1. To perform a buffer read from the standard DataFlash buffer (1056bytes), the opcode must be clocked into the device followed by three address bytes comprised of 13 don’t care bits and 11 buffer address bits (BFA10-BFA0). To perform a buffer read from the binary buffer (1024 bytes), the opcode must be clocked into the device followed by three address bytes comprised of 14 don’t care bits and 10 buffer address bits (BFA9 - BFA0).93542F–DFLASH–09/06AT45DB642DFollowing the address bytes, additional don’t care bytes (one byte if using the serial interface or pin must remain low during the loading of the opcode, the address bytes, the don’t care bytes,and the reading of data. When the end of a buffer is reached, the device will continue reading back at the beginning of the buffer. A low-to-high transition on the CS pin will terminate the read operation and tri-state the output pins (SO or I/O7-I/O0).7.Program and Erase Commands7.1Buffer WriteData can be clocked in from the input pins (SI or I/O7-I/O0) into either buffer 1 or buffer 2. To load data into the standard DataFlash buffer (1056 bytes), a 1-byte opcode, 84H for buffer 1 or 87H for buffer 2, must be clocked into the device, followed by three address bytes comprised of 13 don’t care bits and 11 buffer address bits (BFA10-BFA0). The 11 buffer address bits specify the first byte in the buffer to be written. To load data into the binary buffers (1024 bytes each), a 1-byte opcode 84H for buffer 1 or 87H for buffer 2, must be clocked into the device, followed by three address bytes comprised of 14 don’t care bits and 10 buffer address bits (BFA9 - BFA0).The 10 buffer address bits specify the first byte in the buffer to be written. After the last address byte has been clocked into the device, data can then be clocked in on subsequent clock cycles.If the end of the data buffer is reached, the device will wrap around back to the beginning of the buffer. Data will continue to be loaded into the buffer until a low-to-high transition is detected on 7.2Buffer to Main Memory Page Program with Built-in EraseData written into either buffer 1 or buffer 2 can be programmed into the main memory. A 1-byte opcode, 83H for buffer 1 or 86H for buffer 2, must be clocked into the device. For the standard DataFlash page size (1056 bytes), the opcode must be followed by three address bytes consist of 13 page address bits (PA12 - PA0) that specify the page in the main memory to be written and 11 don’t care bits. To perform a buffer to main memory page program with built-in erase for the binary page size (1024 bytes), the opcode 83H for buffer 1 or 86H for buffer 2, must be clocked into the device followed by three address bytes consisting of 13 page address bits (A22 - A10)that specify the page in the main memory to be written and 10 don’t care bits. When a low-to-high transition occurs on the CS pin, the part will first erase the selected page in main memory (the erased state is a logic 1) and then program the data stored in the buffer into the specified page in main memory. Both the erase and the programming of the page are internally self-timed and should take place in a maximum time of t EP . During this time, the status register and the RDY/BUSY pin will indicate that the part is busy.7.3Buffer to Main Memory Page Program without Built-in EraseA previously-erased page within main memory can be programmed with the contents of either buffer 1 or buffer 2. A 1-byte opcode, 88H for buffer 1 or 89H for buffer 2, must be clocked into the device. For the standard DataFlash page size (1056 bytes), the opcode must be followed by three address bytes consist of 13 page address bits (PA12-PA0) that specify the page in the main memory to be written and 11 don’t care bits. To perform a buffer to main memory page pro-gram without built-in erase for the binary page size (1024 bytes), the opcode 88H for buffer 1 or 89H for buffer 2, must be clocked into the device followed by three address bytes consist of 13-page address bits (A22 - A10) that specify the page in the main memory to be written and 10data stored in the buffer into the specified page in the main memory. It is necessary that the103542F–DFLASH–09/06AT45DB642Dpage in main memory that is being programmed has been previously erased using one of the erase commands (Page Erase or Block Erase). The programming of the page is internally self-timed and should take place in a maximum time of t P . During this time, the status register and the RDY/BUSY pin will indicate that the part is busy.7.4Page EraseThe Page Erase command can be used to individually erase any page in the main memory array allowing the Buffer to Main Memory Page Program to be utilized at a later time. To perform a page erase in the standard DataFlash page size (1056bytes), an opcode of 81H must be loaded into the device, followed by three address bytes comprised of 13 page address bits (PA12-PA0) that specify the page in the main memory to be erased and 11 don’t care bits. To perform a page erase in the binary page size (1024 bytes), the opcode 81H must be loaded into the device, followed by three address bytes consist of 13 page address bits (A22 - A10) that specify the page in the main memory to be erased and 10 don’t care bits. When a low-to-high transition erase operation is internally self-timed and should take place in a maximum time of t PE . During 7.5Block EraseA block of eight pages can be erased at one time. This command is useful when large amounts of data has to be written into the device. This will avoid using multiple Page Erase Commands.To perform a block erase for the standard DataFlash page size (1056bytes), an opcode of 50H must be loaded into the device, followed by three address bytes comprised of 10 page address bits (PA12-PA3) and 14 don’t care bits. The 10 page address bits are used to specify which block of eight pages is to be erased. To perform a block erase for the binary page size (1024bytes), the opcode 50H must be loaded into the device, followed by three address bytes consist-ing of 10 page address bits (A22 - A13) and 13 don’t care bits. The 10 page address bits are used to specify which block of eight pages is to be erased. When a low-to-high transition occurs nally self-timed and should take place in a maximum time of t BE . During this time, the status Table 7-1.Block Erase AddressingPA12/A22PA11/A21PA10/A20PA9/A19PA8/A18PA7/A17PA6/A16PA5/A15PA4/A14PA3/A13PA2/A12PA1/A11PA0/A10Block 0000000000X X X 00000000001X X X 10000000010X X X 20000000011X X X 3••••••••••••••••••••••••••••••••••••••••••1111111100X X X 10201111111101X X X 10211111111110X X X 10221111111111XXX1023。

高分子作业

聚苯乙烯无色透明，能自由着色，相对密度也仅次于PP、PE，具有优异的电性能，特别是高频特性好，次于F-4、PPO。另外，在光稳定性方面仅次于甲基丙烯酸树脂，但抗放射线能力是所有塑料中最强的。聚苯乙烯最重要的特点是熔融时的热稳定性和流动性非常好，所以易成型加工，特别是注射成型容易，适合大量生产。成型收缩率小，成型品尺寸稳定性也好。
发展现状
世界聚苯乙烯主要用于生产包装容器、日用品及电器/电子3大行业。世界各地聚苯乙烯的消费结构不尽相同。北美约9%用于电器/ 电子行业，57%用于包装容器，34%用于其他方面；西欧约15%用于电器/电子行业， 48%用于包装容器，37%用于其他方面；东北亚约49%用于电器/电子行业，20%用于包装容器，31%用于其他方面；中国约63%用于电器/电子行业，7%用于包装容器，30% 用于其他方面。
食品包装中的聚苯乙烯
PS的优良性能
1.透明性好由于是非晶高聚物，透明度高达88%92%，同时由于有苯环，折射率高达1.60，所以产品有良好光泽，外观美观。
2.易于加工PS加工温度为200摄氏度左右，熔体黏度小，形成收缩率小，制品尺寸稳定性好，热容较 PE低，固化快，价格低廉，形成周期短。
3.耐辐射PS是最耐辐射的聚合物之一，可耐较大剂量，因而可用于X射线室的装饰板，这是由于苯环可使吸收的辐射能在苯环上均匀分配。
聚苯乙烯餐具聚苯乙烯建材
各种聚苯乙烯日用品
环境问题
被丢弃的聚苯乙烯无法经由生物分解及光分解进入生物地质化学循环。由于发泡聚苯乙烯(保丽龙)其低比重以致于漂浮于水面或随风飘移，造成主观的景观破坏，聚苯乙烯已是主要的海洋漂流物。而对误食这类塑胶海洋生物而言，会对其消化
苯乙烯合成反应

45b净截面抵抗矩

45b净截面抵抗矩45b净截面抵抗矩是指在弯曲力作用下，截面内部材料的抵抗能力。

在工程设计中，净截面抵抗矩是一个重要的参数，用于评估结构的弯曲性能。

下面将详细介绍关于45b净截面抵抗矩的知识。

首先，我们来了解什么是净截面抵抗矩。

净截面抵抗矩是指截面中心轴线的抵抗力矩。

在弯曲力作用下，截面内部材料会产生应力分布，力矩的大小取决于截面形状、截面尺寸和截面材料的力学性能。

因此，净截面抵抗矩是一种对截面弯曲能力的度量。

对于45b净截面抵抗矩，我们需要先了解其截面形状和尺寸。

45b截面通常是指一个宽度为b，高度为h的矩形梁截面，梁截面的加强筋为45度斜筋。

在这种情况下，净截面抵抗矩的计算方法稍有不同。

根据力学理论，净截面抵抗矩可以通过以下公式计算：W = As * fy * (d - a/2) + Aa * fa * (d - a/2 - a1) + As1 * fs1 * (d - a/2 - a1 -a2)其中，W表示净截面抵抗矩，As表示主筋的面积，fy表示主筋的抗拉强度，d 表示截面离受压边缘的距离，a表示梁的预留挖槽宽度，Aa表示加强筋的面积，fa表示加强筋的抗拉强度，a1表示加强筋距离主筋的距离，As1表示斜筋的面积，fs1表示斜筋的抗剪强度，a2表示斜筋距离主筋的距离。

从上述公式可以看出，45b净截面抵抗矩的计算涉及到两个方面的因素：主筋和斜筋。

主筋的抗拉强度取决于主筋材料的性能，斜筋的抗剪强度取决于斜筋的材料和布置方式。

因此，净截面抵抗矩的计算需要确定主筋和斜筋的相关参数。

在设计中，为了满足结构的强度要求，需要根据荷载情况和结构的使用要求进行净截面抵抗矩的计算。

具体计算过程需要按照相关规范和标准进行，这超出了该回答的范围。

总结起来，45b净截面抵抗矩是指矩形梁截面中心轴线的抵抗力矩，用于评估梁截面的弯曲性能。

其计算方法涉及到主筋和斜筋的相关参数，需要根据设计要求和规范进行准确计算。

了解净截面抵抗矩的相关知识对于工程结构的设计和分析非常重要。

化工仪表英文缩写及实例

PID仪表信息英文缩写标识名称AE 分析仪表AH 分析指标高报警AHH 分析指标高高报警AI 分析指示AIA 分析指示报警AIAS 分析指示报警连锁AL 指标低报警AND 模拟信号变数字信号AP 分析测试点AT 分析远传（变送器）铅封开铅封关ESD 紧急切断（停车）FALL 流量低低报警FE 流量检测元件FI 流量指示FIA 流量指示报警FIC 流量控制阀FICA 流量控制报警FICQ 流量累计FIQ 流量累计FIQA 流量计FT 流量变送器FV 流量控制阀FY 流量信号转换器I 电信号I/P 电信号转换成气信号KC 程序控制KQC 程序定量控制KQV 程序定量控制阀KQY 程序定量控制转换器KV 程控阀KY 程控阀信号转换器LAHS 液位高报警连锁LALL 液位低低报警LALS 液位低LC 锁定关报警连锁LG 液位计LI 液位指示LIA 液位指示报警LIAC 液位控制报警LIAS 液位指示连锁LIC 液位控制LICA 液位控制报警LICAS 液位控制报警连锁LIS 液位连锁LIT 液位显示信号变送LO 锁定开LSH 液位高连锁LSL 液位低连锁LT 液位信号远传LV 液位控制阀LY 液位信号转换器PAHH 压力高高报警PDG 数字压力表PDI 压差显示PDIA 压差显示报警PDICA 压差控制报警PDT 压差远传PG 压力表PI 压力显示PIA 压力显示报警PIC 压力控制信号PICA 压力控制报警PICAS 压力控制报警连锁PSV 压力安全阀PT 压力远传PV 压力控制阀PY 压力信号转换器SHH 速度高高报警SIAS 速度报警连锁ST 速度变速器STOP 停止按钮SV 安全阀TAHH 温度高报警连锁TE 温度检测元件TG 温度表TI 温度指示TIA 温度报警TICA 温度控制报警TIAS 温度报警连锁TIC 温度控制阀TICAS 温度控制报警连锁TT 温度变送器TV 气动薄膜控制阀TY 电气阀门定位器XV 两位控制阀门XY 两位控制阀转换器Y 信号转换器YL 指示灯ZI 阀位指示ZIC 阀位指示-关ZIO 阀位指示-开ZS 阀位连锁ZSC 阀位开关-关ZSO 阀位开关-开ZT 阀位变送常用仪表字母缩写英文名称英文缩写中文名称TEMPERATURE WELL TW 温升TEMPERATURE INDICATOR TI 温度表TEMPERATURE TRANSMITTER TT 温度变送器TEMP INDICATOR CONTROLLER TIC 温度显示控制器TEMPERATURE CONTROL VALVE TCV 温度控制阀TEMPERATURE SWITCH HIGH TSH 温度高开关TEMPERATURE SWITCH HIGH HIGH TSHH 温度高高开关TEMPERATURE SWITCH LOW TSL 温度低开关TEMPERATURE SWITCH LOW LOW TSLL 温度低低开关TEMPERATURE ALARM HIGH TAH 温度高报警TEMPERATURE ALARM HIGH HIGH TAHH 温度高高报警TEMPERATURE ALARM LOW TAL 温度低报警TEMPERATURE ALARM LOW LOW TALL 温度低低报警PRESSURE INDICATOR PI 压力表PRESSURE TRANSIMITTER PT 压力变送器PRESSURE INDICATOR CONTROLLER PIC 压力显示控制器PRESSURE CONTROL VALVE PCV 压力控制阀PRESSURE SWITCH HIGH PSH 压力高开关PRESSURE SWITCH HIGH HIGH PSHH 压力高高开关PRESSURE SWITCH LOW PSL 压力低开关PRESSURE SWITCH LOW LOW PSLL 压力低低开关PRESSURE ALARM HIGH PAH 压力高报警PRESSURE ALARM HIGH HIGH PAHH 压力高高报警PRESSURE ALARM LOW PAL 压力低报警PRESSURE ALARM LOW LOW PALL 压力低低报警PRESSURE DIFFERENT SWlCH HIGH PDSH 差压高开关PRESSURE DIFFERENT SWICH LOW PDSL 差压低开关PRESSURE DIFFERENT ALARM LOW PDAL 差压低报警PRESSURE DIFFERENT ALARM HIGH PDAH 差压高报警LEVEL INDICATOR LI 液位计LEVEL GLASS TUBE LG 液位玻璃管LEVEL TRANSIMITTER LT 液位变送器LEVEL INDICATOR CONTROLLER LIC 液位显示控制器LEVEL CONTROL VALVE LCV 液位控制阀LEVEL SWITCH HIGH LSH 液位高开关LEVEL SWITCH HIGH H1GH LSHH 液位高高开关LEVEL SWITCH LOW LSL 液位低开关LEVEL SWITCH LOW LOW LSLL 液位低低开关LEVEL ALARM HIGH LAH 液位高报警LEVEL ALARM LOW LOW 液位低报警LEVEL ALARM HIGH HIGH LAHH 液位高高报警LEVEL ALARM LOW LOW LALL 液位低低报警FLOW INDICATOR Fl 流量表FLOW TRNSIMITTER FT 流量变送器FLOW INDICATOR CONTROLLER FIC 流量显示控制器FLOW CONTROL VALVE FCV 流量控制阀PRESSURE SAFETY VALVE PSV 压力安全阀SHUT DOWN VALVE SDV 关断阀BLOW DOWN VALVE BDV 排空阀UNIT SHUT DOWN USD 单元关断PROCESS SHUT DOWN PSD 系统关断EMERGENCY SHUT DOWN ESD 紧急关断PROGRAMA．LOGICAL CONTROLLER PLC 可编程逻辑控制器仪表功能字母与常用缩写注：( 1 ) “首位字母”在一般悄况下为单个表示被测变量或引发变量的字母（简称变量字母），在首位字母附加修饰字母后，首位字母则为首位字母+修饰字母。