STPS40H100CW;中文规格书,Datasheet资料

A2 K1 A1
TO-247
DESCRIPTION Dual center tap Schottky rectifier suited for Switch Mode Power Supplies and high frequency DC to DC converters. Packaged in TO-247, this device is intended for use in high frequency inverters. ABSOLUTE RATINGS (limiting values, per diode) Symbol VRRM IF(RMS) IF(AV) IFSM IRRM IRSM EAS PARM Tstg Tj dV/dt RMS forward current Average forward current Surge non repetitive forward current Repetitive peak reverse current Non repetitive peak reverse current Non repetitive avalanche energy Repetitive peak avalanche power Storage temperature range Maximum operating junction temperature Critical rate of rise of rise voltage Tc = 160°C δ = 0.5 Per diode Per device Parameter Repetitive peak reverse voltage Value 100 30 20 40 300 1 4 36 26400 - 65 to + 175 175 10000 Unit V A A A A A mJ W °C °C V/µs
Unit µA mA V
VR = VRRM IF = 20 A IF = 20 A IF = 40 A IF = 40 A 0.67 0.58
To evaluate the maximum conduction losses use the following equation : P = 0.5 x IF(AV) + 0.0055 x IF2(RMS) Fig. 1: Average forward power dissipation versus average forward current (per diode). NhomakorabeaV
Dia.
H
A
L5
L L2 L4 F2 F3 V2 F(x3) G = = M E F4 L3
F1
L1 D
A 4.85 5.15 0.191 D 2.20 2.60 0.086 E 0.40 0.80 0.015 F 1.00 1.40 0.039 F1 3.00 F2 2.00 F3 2.00 2.40 0.078 F4 3.00 3.40 0.118 G 10.90 H 15.45 15.75 0.608 L 19.85 20.15 0.781 L1 3.70 4.30 0.145 L2 18.50 L3 14.20 14.80 0.559 L4 34.60 L5 5.50 M 2.00 3.00 0.078 V 5° V2 60° Dia. 3.55 3.65 0.139
Fig. 3: Normalized avalanche power derating versus pulse duration.
PARM(tp) PARM(1µs)
1
Fig. 4: Normalized avalanche power derating versus junction temperature.
δ = 0.5
150 100 50 0 1E-3
Tc=150°C
IM t
δ = 0.2 δ = 0.1
T
Single pulse
δ=0.5
t(s) 1E-2 1E-1 1E+0
tp(s) 0.0 1E-3 1E-2 1E-1
δ=tp/T
tp
1E+0
Fig. 7: Reverse leakage current versus reverse voltage applied (maximum values, per diode).
Pulse test : * tp = 5 ms, δ < 2% ** tp = 380 µs, δ < 2%
Parameter Junction to case Per diode Total Coupling
Value 0.9 0.55 0.1
Unit °C/W
Min.
Typ. 5
Max. 10 15 0.73 0.61 0.85 0.72
n
Epoxy meets UL94,V0
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n n n
Cooling method: C Recommended torque value: 0.8 N.m. Maximum torque value: 1 N.m. Ordering type STPS40H100CW Marking STPS40H100CW Package TO-247 Weight 4.36g Base qty 30 Delivery mode Tube
Tj=125°C Typical values
Tj=125°C Maximum values
Tj=25°C Maximum values
10
VFM(V) 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
3/4
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STPS40H100CW
IM(A) 400 350 300 250 200
Tc=100°C Tc=50°C
Fig. 6: Relative variation of thermal impedance junction to case versus pulse duration.
Zth(j-c)/Rth(j-c) 1.0 0.8 0.6 0.4 0.2
®
STPS40H100CW
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTICS
A1
IF(AV) VRRM Tj (max) VF (max) FEATURES AND BENEFITS
n n n
2 x 20 A 100 V 175 °C 0.61 V
PF(av)(W) 16 14 12 10 8 6
T
Fig. 2: Average forward current versus ambient temperature (δ=0.5, per diode).
IF(av)(A)
δ = 0.5 δ = 0.2 δ = 0.1 δ = 0.05 δ=1
4 2 0 0.0 2.5 5.0 IF(av) (A)
STPS40H100CW
THERMAL RESISTANCES Symbol Rth (j-c) Rth (c) When the diodes 1 and 2 are used simultaneously : ∆ Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) STATIC ELECTRICAL CHARACTERISTICS Symbol IR * VF ** Parameter Reverse leakage current Forward voltage drop Tests Conditions Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C
Tj=100°C
1.0
Tj=75°C
Tj=25°C
VR(V) 50 60 70 80 90 100
VR(V) 0.1 1 2 5 10 20 50 100
Fig. 9: Forward voltage drop versus forward current (per diode).
IFM(A) 200 100
1/4
tp = 10 ms sinusoidal tp = 2 µs F = 1kHz square tp = 100 µs square Tj = 25°C Ias = 3 A tp = 1µs L= 60 mH Tj = 25°C
July 2003 - Ed: 4D
/
δ=tp/T
tp
7.5 10.0 12.5 15.0 17.5 20.0 22.5 25.0
22 20 18 16 14 12 10 8 6 4 2 0
Rth(j-a)=Rth(j-c)
Rth(j-a)=15°C/W
T
δ=tp/T
tp
Tamb(°C) 50 75 100 125 150 175
0
25
PACKAGE MECHANICAL DATA TO-247 DIMENSIONS REF.
V
Millimeters Min. Typ. Max. Min.
Inches Typ. Max. 0.203 0.102 0.031 0.055 0.118 0.078 0.094 0.133 0.429 0.620 0.793 0.169 0.728 0.582 1.362 0.216 0.118 5° 60° 0.143
IR(mA) 1E+1
Tj=125°C
Fig. 8: Junction capacitance versus reverse voltage applied (typical values, per diode).
C(nF) 3.0
F=1MHz Tj=25°C
1E+0 1E-1 1E-2 1E-3 1E-4 0 10 20 30 40
A2
K
n n
NEGLIGIBLE SWITCHING LOSSES LOW LEAKAGE CURRENT GOOD TRADE OFF BETWEEN LEAKAGE CURRENT AND FORWARD VOLTAGE DROP LOW THERMAL RESISTANCE AVALANCHE CAPABILITY SPECIFIED
PARM(tp) PARM(25°C)
1.2 1
0.1
0.8 0.6
0.01
0.4 0.2
0.001
0.01 0.1 1
tp(µs)
10 100 1000
Tj(°C)
0 0 25 50 75 100 125 150
2/4
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STPS40H100CW
Fig. 5: Non repetitive surge peak forward current versus overload duration (maximum values, per diode).