赛米控丹佛斯 SEMITRANS IGBT模块 SKM200GB12E4 数据表

SEMITRANS ®
3
IGBT4 Modules
SKM200GB12E4
Features
•IGBT4 = 4. generation medium fast trench IGBT (Infineon)
•CAL4 = Soft switching 4. generation CAL-diode
•Isolated copper baseplate using DBC technology (Direct Bonded Copper) •Increased power cycling capability •With integrated gate resistor
•For higher switching frequenzies up to 12kHz
•UL recognized, file no. E63532
Typical Applications*
•AC inverter drives •UPS
Remarks
•Case temperature limited to T c = 125°C max.
•Recommended T op = -40 ... +150°C •Product reliability results valid for T j = 150°C
Absolute Maximum Ratings Symbol
Conditions Values Unit
IGBT V CES T j =25°C 1200V I C T j =175°C
T c =25°C 313A T c =80°C
241A I Cnom 200A I CRM
I CRM = 3xI Cnom 600A V GES -20...20V t psc V CC =800V V GE ≤ 15V V CES ≤ 1200V
T j =150°C
10µs T j
-40...175°C Inverse diode I F T j =175°C
T c =25°C 229A T c =80°C 172A I Fnom
200
A I FRM I FRM = 3xI Fnom
600A I FSM t p =10ms, sin 180°, T j =25°C
990A T j -40 (175)
°C Module I t(RMS)T terminal =80°C
500A T stg -40...125°C V isol
AC sinus 50 Hz, t =1min
4000
V
Characteristics Symbol
Conditions min.typ.max.Unit
IGBT V CE(sat)
I C =200A V GE =15V chiplevel T j =25°C 1.80 2.05V T j =150°C 2.20 2.40V V CE0chiplevel T j =25°C 0.80.9V T j =150°C 0.70.8V r CE V GE =15V chiplevel T j =25°C 5.00 5.75m ΩT j =150°C
7.508.00m ΩV GE(th)V GE =V CE , I C =7.6mA
5
5.8
6.5V I CES V GE =0V V CE =1200V T j =25°C 2.7
mA T j =150°C mA C ies V CE =25V V GE =0V
f =1MHz 12.3nF C oes f =1MHz 0.81nF C res f =1MHz
0.69nF Q G V GE =- 8 V...+ 15 V 1130nC R Gint T j =25°C 3.8Ωt d(on)V CC =600V I C =200A V GE =±15V R G on =1ΩR G off =1Ω
di/dt on =5500A/µs di/dt off =2300A/µs T j =150°C 204ns t r T j =150°C 40ns E on T j =150°C 21mJ t d(off)T j =150°C 490ns t f T j =150°C 107ns E off T j =150°C 27
mJ R th(j-c)
per IGBT
0.14
K/W
Characteristics Symbol
Conditions
min.typ.
max.
Unit
Inverse diode
V F = V EC I F =200A
V GE =0V chiplevel
T j =25°C 2.20 2.52V T j =150°C 2.15 2.47V V F0
chiplevel T j =25°C 1.3 1.5V T j =150°C 0.9 1.1V r F
chiplevel
T j =25°C 4.5 5.1m ΩT j =150°C
6.3 6.8
m ΩI RRM I F =200A di/dt off =4450A/µs V GE =±15V
V CC =600V
T j =150°C 174A Q rr T j
=150°C
33µC E rr T j =150°C 13
mJ
R th(j-c)per diode
0.26
K/W Module L CE 15
20
nH R CC'+EE'
terminal-chip T C =25°C 0.25m ΩT C =125°C
0.5m Ω
R th(c-s)per module 0.02
0.038K/W M s to heat sink M6
3
5Nm M t to terminals M6
2.5
5Nm Nm w
325
g
SEMITRANS ® 3
IGBT4 Modules
SKM200GB12E4
Features
•IGBT4 = 4. generation medium fast trench IGBT (Infineon)
•CAL4 = Soft switching 4. generation CAL-diode
•Isolated copper baseplate using DBC technology (Direct Bonded Copper) •Increased power cycling capability •With integrated gate resistor
•For higher switching frequenzies up to 12kHz
•UL recognized, file no. E63532
Typical Applications*
•AC inverter drives •UPS
Remarks
•Case temperature limited to T c = 125°C max.
•Recommended T op = -40 ... +150°C •Product reliability results valid for T j = 150°C
Fig. 1: Typ. output characteristic, inclusive R CC'+ EE'Fig. 2: Rated current vs. temperature I C = f (T C )
Fig. 3: Typ. turn-on /-off energy = f (I C )Fig. 4: Typ. turn-on /-off energy = f (R G )
Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic
Fig. 7: Typ. switching times vs. I C Fig. 8: Typ. switching times vs. gate resistor R G
Fig. 9: Transient thermal impedance Fig. 10: Typ. CAL diode forward charact., incl. R CC'+ EE'
Fig. 11: CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode peak reverse recovery charge
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff.。