TLOH1100B中文资料

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B1100LB中文资料

B
SMB Dim Min 3.30 4.06 1.96 0.15 5.00 0.10 0.76 2.00 Max 3.94 4.57 2.21 0.31 5.59 0.20 1.52 2.62 A B C D
A
C
D
E G H
Mechanical Data
· · · · · Case: SMB, Molded Plastic Terminals: Solder Plated Terminal Solderable per MIL-STD-202, Method 208 Polarity: Cathode Band or Cathode Notch Marking: B110LB and Date Code Weight: 0.093 grams (approx.)
DS30077 Rev. A-2
1 of 2
B1100LB
4
IF, INSTANTANEOUS FWD CURRENT (A)
10
I(AV), AVERAGE FWD CURRENT (A)源自31.02
0.1
1
0 25 50 75 100 125 150
Tj - 25°C IF Pulse Width = 300µs
@ TA = 25°C unless otherwise specified
B1100LB 100 70 1.0 2.0 50 0.75 0.5 5.0 100 22 -65 to +150
Unit V V A A V mA pF K/W °C
Notes:
1. Valid provided that terminals are kept at ambient temperature. 2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.

安捷伦1100及液相色谱仪的基本知识汇总

安捷伦1100液相色谱仪各项性能指标悬赏分：5|解决时间：2010-10-16 22:13|提问者：4329211最佳答案朋友，直接致电agilent的800-820-3278免费电话就可以得到Agilent的满意答复了系列Agilent 1100泵系统●电子流控阀(EFC)控制的毛细液相泵系统，精度高、流速范围广柱流速范围：1-20ul/min;10-100ul/min（可选件）0.001-2.5m1/min(EFC关闭状态)●高压制备泵系统，单元或双元高压制备泵流速范围:0.001-100m1/min●分析型泵系统流速范围：单元泵：0.001-10m1/min二元泵：0.001-5m1/min四元泵：0.001-10m1/min品种齐全的Agilent 1100系列进样系统●标准手动进样器（分析型或制备型）●标准自动进样器样品瓶容量：可达100个(2mlx100)进样量：0.1-100ul(0.1-1800ul)可选件●微盘式自动进样器样品瓶容量：2x96(孔板)，2x386(孔板)或100x2ml进样量：0.1-100ul(标准件)0.1-1500ul可选件●微量标准自动进样器/微盘式自动进样器进样量：0.01-8ul（标准）;0.01-40ul（可选）●恒温标准自动进样器/微盘式自动进样器温度范围：4-40℃可设定步进1℃● 220型微孔板式自动进样器－组合化学样品管理系统样品瓶容量：各种规格试管多达12个微孔板（96孔板,384孔板）进样量：0.1-5ul;0.1-20ulAgilent 1100系列检测器●可变波长扫描紫外检测器（VWD)波长范围：190?600nm●多波长检测器(MWD)波长范围：190?950nm（双灯源）●二极管阵列检测器(DAD)波长范围：190?950nm（双灯源）●荧光检测器(FID)激发波长：200-700nm;发射波长:280-900nm光谱存储：全光谱●示差折光检测器(RID)温控：室温+5℃至55℃内置自动吹扫阀和自动溶剂循环阀●电化学检测器(ECD)● LC/MS四极杆质量检测器(MSD)● LC/MS离子阱质量检测器(Trap MSD)柱温箱和脱气机组件●柱温箱温度范围：室温下10℃至80℃可选件：柱切换阀●真空在线脱气机安捷伦1120液相色谱仪技术参数泵：•流速精度：≤0.07% RSD•流速范围：0.001-10.0ml/min，以0.001ml/min的增量自动进样器：•进样量范围：0.1-100ul，以0.1ul的增量•进样精度：<0.25% RSD(5-100ul)，<1% RSD(1-5ul)•样品容量：100个2ml样品瓶；或者2个半托盘，每个40个2ml样品瓶或15个6ml样品瓶柱温箱：•温控范围：室温上10℃到60℃•温控稳定性：±0.15℃VWD：•噪音：±0.75×10 -5AU•波长范围：190-600nm主要特点仪器介绍特点介绍可选5种配置系统，工厂测试，开箱即用和各种检测器兼容：示差折光检测器（RID），荧光检测器（FLD），蒸发光散色检测器（ELSD）易于使用的EZChrom Elite Compact软件，提供英中日界面LMD软件在故障发生前就可以实时通报新的最佳性能色谱柱提供可靠重现的结果附加服务：1120 液相色谱仪有五种集成的一体化配置可供选择：1.等度泵手动进样VWD2.梯度泵手动进样VWD3.梯度泵手动进样柱温箱VWD4.梯度泵ALS 柱温箱VWD5.等度泵ALS 柱温箱VWD＊其中包括了硬件、软件、色谱柱和LMD分析方法此仪器尚未上传分析方法相关资料1.安捷伦1120液相色谱仪详细技术参数与资料！！相关仪器1.Agilent1200液相色谱仪(1200)2.液相色谱仪LC2100(LC2100)相关耗材1.安捷伦C8、C18液相色谱柱(规格：C8、C18)2.安捷伦氘灯(规格：Agilent 1100)3.顶空进样瓶、自动进样瓶(规格：20ml)4.色谱微量进样器、液体进样器、气体进样器(规格：ul)5.安捷伦液相色谱住(规格：C8,C18)6.Agilent ZORBAX StableBond SB-C18液相色谱柱(规格：Agilent SB-C18)7.真空泵、无油真空抽滤泵(规格：QP-01)8.液相色谱柱温箱(规格：JK-LCagilent1200安捷伦液相色谱仪技术参数方便地利用四种溶剂进行等梯度或梯度分析，适用于方法快速开发和快速配备流动相，以及冲洗HPLC 系统流量范围宽，最高流速10 mL/min ，延迟体积800-1100 ?L，适用于微径柱、标准柱和半制备应用通过Instant Pilot 组件或安捷伦化学工作站或EZChrom 软件，可以容易地进行编程和控制包含微量真空脱气机，脱气效率高，实现了操作无障碍和最高性能，完全不需要通氦气直接从前面板快速更换维护部件通过自我诊断、内置日志和预编程的测试方法，快速判断问题早期维护反馈（EMF）长期不间断地监测仪器使用和用户预设的限度，一旦超出限度，将提供反馈信息在所有安捷伦1200 系列HPLC 组件范围内可升级和扩展主要特点agilent1200安捷伦液相色谱仪特点介绍同时安捷伦1200系列快速高分离液相色谱系统同样和常规高效液相色谱仪一样耐用，也保留了常规液相色谱仪的方法和工作原理。

TLP191B中文资料

Symbol
VF IR CT VFD IRD
CTD
Test Condition
IF = 10 mA VR = 3 V V = 0, f = 1 MHz IFD = 10 µA VRD = 10 V
V = 0, f = 1 MHz
Min. Typ. Max. Unit
1.2
1.4
1.7
V
—
—
10
µA
—
TLP191B
∆VF /∆Ta – IF
−4.0
−3.6
−3.2
−2.8
−2.4
−2.0
−1.6
−1.2
−0.8
0.1
0.3 0.5 1
35
10
30
Forward current IF (mA)
Forward current IF (mA)
IF – VF
100 Ta = 25 °C
50
30
10
5 3
1
1.0
1.2
1.4
1.6
1.8
2.0
2.2
Forward voltage VF (V)
Pulse forward current IFP (mA)
5000 3000
1000 500 300
IFP – DR
Pulse width ≦ 100µs Ta = 25 °C
100
50 30
10 3
10-3
3
Characteristic
Forward current
Forward current derating (Ta ≥ 25°C)
LED Pulse forward current (100µs pulse, 100 pps)

BR1100资料

MBR1100Preferred DeviceAxial Lead Rectifier...employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low-voltage, high-frequency inverters, free wheeling diodes, and polarityprotection diodes.•Low Reverse Current•Low Stored Charge, Majority Carrier Conduction•Low Power Loss/High Efficiency•Highly Stable Oxide Passivated Junction•Guard-Ring for Stress Protection•Low Forward V oltage•150°C Operating Junction Temperature•High Surge CapacityMechanical Characteristics:•Case: Epoxy, Molded•Weight: 0.4 gram (approximately)•Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable•Lead and Mounting Surface Temperature for Soldering Purposes: 220°C Max. for 10 Seconds, 1/16″ from case•Shipped in plastic bags, 1000 per bag•Available Tape and Reeled, 5000 per reel, by adding a “RL’’ suffix to the part number•Polarity: Cathode Indicated by Polarity Band•Marking: B1100MAXIMUM RATINGSPreferred devices are recommended choices for future use and best overall value.THERMAL CHARACTERISTICS (See Note 2)ELECTRICAL CHARACTERISTICS (T= 25°C unless otherwise noted)Figure 2. Typical Reverse Current {Figure 3. Current Derating (Mounting Method 3 per Note 1)Figure 4. Power Dissipation20102.05.01.0V R , REVERSE VOLTAGE (VOLTS)609000.20.040.020.011201600T A , AMBIENT TEMPERATURE (°C)4.03.02.01.00I F(AV), AVERAGE FORWARD CURRENT (AMPS)1.004.03.02.01.02.0140i F , I N S T A N T A N E O U S F O R W A R D C U R R E N T (A M P S )I I P F (A V ), A V E R A G E P O W E R D I S S I P A T I O N (W A T T S )0.50.20.1708010203040500.10.41.020********* 3.0 4.0 5.00.050.02100, R E V E R S E C U R R E N T ( A )R m 4.02.01020100402001 K400200180, A V E R A G E F O R W A R D C U R R E N T (A M P S )F (A V ){ The curves shown are typical for the highest voltagedevice in the voltage grouping. Typical reverse current for lower voltage selections can be estimated from these same curves if V R is sufficiently below rated V R .Figure 5. Typical Capacitance2040V R , REVERSE VOLTAGE (VOLTS)150504*********C , C A P A C I T A N C E (p F )50100601001070809070609080NOTE 1 — MOUNTING DATA:Data shown for thermal resistance junction-to-ambient (R q JA) for the mounting shown is to be used as a typical guideline values for preliminary engineering or in case the tie point temperature cannot be measured.Typical Values for Rin Still AirMounting Method 1P .C. Board with 1-1/2″ x 1-1/2″copper surface.Mounting Method 3P .C. Board with 1-1/2″ x 1-1/2″copper surface.VECTOR PIN MOUNTINGMounting Method 2NOTE 2 — THERMAL CIRCUIT MODEL:(For heat conduction through the leads)Use of the above model permits junction to lead thermal resistance for any mounting configuration to be found. For a given total lead length, lowest values occur when one side of the rectifier is brought as close as possible to the heat sink.Terms in the model signify:T A = Ambient Temperature T C = Case Temperature T L = Lead Temperature T J = Junction Temperature R q S = Thermal Resistance, Heat Sink to Ambient R q L = Thermal Resistance, Lead to Heat Sink R q J = Thermal Resistance, Junction to Case P D = Power Dissipation(Subscripts A and K refer to anode and cathode sides,respectively.) V alues for thermal resistance components are:R q L = 100°C/W/in typically and 120°C/W/in maximum.R θJ = 36°C/W typically and 46°C/W maximum.NOTE 3 — HIGH FREQUENCY OPERATION:Since current flow in a Schottky rectifier is the result of majority carrier conduction, it is not subject to junction diode forward and reverse recovery transients due to minority carrier injection and stored charge. Satisfactory circuit analysis work may be performed by using a model consisting of an ideal diode in parallel with a variable capacitance. (See Figure 5)Rectification efficiency measurements show that operation will be satisfactory up to several megahertz. For example, relative waveform rectification efficiency is approximately 70 percent at 2 MHz, e.g., the ratio of dc power to RMS power in the load is 0.28 at this frequency,whereas perfect rectification would yield 0.406 for sine wave inputs. However, in contrast to ordinary junction diodes, the loss in waveform efficiency is not indicative of power loss: it is simply a result of reverse current flow through the diode capacitance, which lowers the dc output voltage.PACKAGE DIMENSIONSCASE 59-10ISSUE SAXIAL LEAD, DO-41DIM MIN MAX MIN MAX MILLIMETERSINCHES A 4.10 5.200.1610.205B 2.00 2.700.0790.106D 0.710.860.0280.034F −−− 1.27−−−0.050K25.40−−−1.000−−−NOTES:1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.2.CONTROLLING DIMENSION: INCH.3.59−04 OBSOLETE, NEW STANDARD 59−09.4.59−03 OBSOLETE, NEW STANDARD 59−10.5.ALL RULES AND NOTES ASSOCIATED WITH JEDEC DO−41 OUTLINE SHALL APPLY6.POLARITY DENOTED BY CATHODE BAND.7.LEAD DIAMETER NOT CONTROLLED WITHIN F DIMENSION.ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to makechanges without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.PUBLICATION ORDERING INFORMATIONJAPAN : ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051Phone : 81-3-5773-3850。

广州优库电子有限公司 P1000（P1100）产品用户使用手册说明书

用户使用手册广州优库电子有限公司本手册适用于P1000（P1100）关于这本手册请您在使用本手册描述的产品前仔细阅读手册的所有内容，以保障产品安全有效地使用。

建议将本手册妥善保存，以备下次使用查询。

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本手册中的图片仅供参考，如有个别图片与实际产品不符，请以实际产品为准。

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版本记录目录一、产品简介 (7)1.1主要特点 (7)1.2打开包装 (7)1.3通讯端口 (7)1.4LED指示灯 (7)1.5开机、关机和重启 (8)1.6维护与保养 (8)1.7读码技巧 (8)二、系统设置 (9)2.1设置标识 (9)2.2基础设置条码 (9)2.2.1蓝牙虚拟模式 (9)2.2.2蓝牙HID模式:与Android、ios系统的手机或自带蓝牙功能的PC终端匹配.102.2.3蓝牙SPP模式:Android设备或者PC端企业或者私人定制化蓝牙串口软件 (11)2.2.4蓝牙BLE模式:ios设备企业或者私人定制化蓝牙串口软件 (11)2.2.5蓝牙个性设置 (12)2.2.6实时模式 (13)2.2.7仓储模式 (14)2.2.8初始化设置 (15)2.2.9版本号设置 (15)2.2.10通讯模式切换 (15)2.2.11休眠时间设置 (16)2.2.12声音相关设置条码 (18)2.2.12.1音量设置码 (18)2.2.12.2蜂鸣器频率设置码 (18)2.2.13语言设置 (19)2.2.14传输速度设置 (20)2.2.15结束符添加设置 (20)2.2.16添加前缀/后缀设置码 (22)2.2.17隐藏前缀/后缀设置码 (22)2.2.18控制字符转义 (26)2.2.19GS、FS字符替换 (26)2.2.20USB键盘大小写输出控制 (26)2.3EAN13&UPC-A (27)2.3.1EAN8 (29)2.3.2UPC-E (29)2.3.3CODABAR（NW-7） (30)2.3.4条码最大/小长度 (32)2.3.5CODE39 (34)2.3.6Code39最大/小条码长度 (36)2.3.7CODE93 (38)2.3.8Code93最大/小条码长度 (39)2.3.9INTERLEAVED2OF5 (41)2.3.10Interleaved2of5最大/小条码长度 (42)2.3.11STANDARD2of5（Industrial2of5） (44)2.3.12Standard2of5（Industrial2of5）最大/小条码长度 (45)2.3.13MATRIX2of5 (47)2.3.14CODE128&EAN/UCC128 (49)2.4.15Code128&EAN/UCC128最大/小条码长度 (50)2.3.16CODE11 (52)2.3.17Code11最大/小条码长度 (54)2.3.18CHINESE POST (55)2.3.19设置正/反相条码 (57)2.4所有类型条码设置 (58)附录1前缀/后缀字符表 (59)附录2前缀/后缀可见字符表 (60)附录3控制字符转义表 (64)一、产品简介本手册适用的广州优库电子产品型号为P1000（P1100），它们应用了广州优库电子有限公司自主研发的全套专利技术，识别性能强大，扫描速度快且灵活。

TLBA1100B(T11);中文规格书,Datasheet资料

TOSHIBA LED LampsTLBA1100B(T11)Panel Circuit Indicators• Surface-mount device • 3.2 (L) × 2.8 (W) × 1.9 (H) mm • Flat-top type • GaN LED• Low drive current, high-intensity light emission • Colors:Blue: λd = 465 nm (typ.)• Applications: automotive use, message signboards, backlighting,etc. • Standard embossed tape packing: T11 (2000 pcs / reel) 8-mm tape reelColor and MaterialAbsolute Maximum Ratings (Ta = 25°C)Part NumberForward CurrentI F (mA) See Note 1Reverse VoltageV R (V)Power DissipationPD (mW)Operation Temperature T opr (°C)Storage Temperature T stg (°C) TLBA1100B 30 4 126 −40 to 100−40 to 100Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and thesignificant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).Note 1: Forward current deratingUnit: mmJEDEC― JEITA―TOSHIBA 4-3R1 Weight: 0.035 g (typ.)Part NumberColorMaterialTLBA1100B BlueGaN0 20 40 60 80 100 120510 15 20 25 30 35Ambient temperature Ta (°C)I F – TaA l l o w a b l e f o r w a r d c u r r e n t I F (m A )Electrical Characteristics (Ta = 25°C)Forward Voltage V F Reverse CurrentI RPart NumberMin Typ. Max I F Max V RTLBA1100B 2.8 3.7 4.2 10 10 4Unit VmAμA VOptical Characteristics–1 (Ta = 25°C)Luminous Intensity I VPart NumberMin Typ. Max I FAvailable Iv rank (Note 2)TLBA1100B 4 7 20 10 JA / KA / LAUnit mcdmANote 2: The specification as following table is used for Iv classification of LEDs in Toshiba facility.Each reel includes the same rank LEDs. Let the delivery ratio of each rank be unquestioned.Iv rankRank symbol Min MaxJA 4.0 8.0KA 6.3 12.6LA 10.0 20.0Unit mcd mcdOptical Characteristics–2 (Ta = 25°C)Emission SpectrumPeak Emission Wavelength λp Δλ DominantWavelengthλdPart NumberMin Typ. Max Typ.Min Typ.MaxI FTLBA1100B ⎯428 ⎯60 462 465 472 10Unit nmnmnmmANote 3: CautionESD withstand voltage according to MIL STD 883D, Method 3015.7 : ≥1000VWhen handling this LED, take the following measures to prevent the LED from being damaged or otherwise adversely affected.1) Use a conductive tablemat and conductive floor mat, and ground the workbench and floor.2) Operators handling laser diodes must be grounded via a high resistance (about 1MΩ). A conductive strap isgood for this purpose.3) Ground all tools including soldering irons.This product is designed as a general display light source usage, and it has applied the measurement standard that matched with the sensitivity of human's eyes. Therefore, it is not intended for usage of functional application (ex. Light source for sensor, optical communication and etc) except general display light source.TLBA1100B−20 0 20 40 60 80 1000.20.40.60.811.21.4RelativeluminosityForward voltage V F (V)I F – V FForwardcurrentIF(mA)Forward current I F(mA)I V – I FLuminousintensityIV(mcd)Case temperature Tc (°C)I V– TcRelativeluminosityIVWavelength λ (nm)Relative luminosity - λTa = 25°CRadiation pattern30°0°60°90°90°30°60°1.00.80.60.40.280°70°50°40°20°10°70°80°50°40°20°10°(typ.)(typ.)(typ.)(typ.)(typ.)PackagingThis LED device is packed in an aluminum envelope with a silica gel and a moisture indicator to avoid moisture absorption. The optical characteristics of the devices may be affected by exposure to moisture in the air before soldering and they should therefore be stored under the following conditions:1. This moisture proof bag may be stored unopened within 12 months at the following conditions.Temperature: 5°C to 30°C Humidity: 90% (max)2. After opening the moisture proof bag, the devices should be assembled within 168 hours in an environment of5°C to 30°C/60% RH or below.3. If upon opening, the moisture indicator card shows humidity 30% or above (Color of indication changes topink) or the expiration date has passed, the devices should be baked in taping with reel. After baking, use the baked devices within 72 hours, but perform baking only once. Baking conditions: 60±5°C, for 12 to 24 hours.Expiration date: 12 months from sealing date, which is imprinted on the same side as this label affixed. 4. Repeated baking can cause the peeling strength of the taping to change, then leads to trouble in mounting.Furthermore, prevent the devices from being destructed against static electricity for baking of it.5. If the packing material of laminate would be broken, the hermeticity would deteriorate. Therefore, do notthrow or drop the packed devices.Mounting MethodSoldering• Reflow soldering (example)• The product is evaluated using above reflow soldering conditions. No additional test is performed exceed thecondition (i.e. the condition more than (*)MAX values) as a evaluation. Please perform reflow soldering under the above conditions.• Please perform the first reflow soldering with reference to the above temperature profile and within 168 h ofopening the package. • Second reflow solderingIn case of second reflow soldering should be performed within 168 h of the first reflow under the above conditions.Storage conditions before the second reflow soldering: 30°C, 60% RH (max) • Make any necessary soldering corrections manually.(only once at each soldering point) Soldering iron : 25 W Temperature : 300°C or less Time: within 3 s • If the product needs to be performed by other soldering method (ex. wave soldering), please contact Toshiba sales representative.Recommended soldering patternUnit: mmTime (s)P a c k a g e s u r f a c e t e m p e r a t u r e (°C )Temperature profile for Pb soldering (example)Time (s)P a c k a g e s u r f a c et e m p e r a t u r e (°C )Temperature profile for Pb-free soldering (example)CleaningWhen cleaning is required after soldering, Toshiba recommends the following cleaning solvents.It is confirmed that these solvents have no effect on semiconductor devices in our dipping test (under the recommended conditions). In selecting the one for your actual usage, please perform sufficient review on washing condition, using condition and etc.ASAHI CLEAN AK-225AES : (made by ASAHI GLASS) KAO CLEAN THROUGH 750H : (made by KAO)PINE ALPHA ST-100S: (made by ARAKAWA CHEMICAL)Precautions when MountingDo not apply force to the plastic part of the LED under high-temperature conditions. To avoid damaging the LED plastic, do not apply friction using a hard material.When installing the PCB in a product, ensure that the device does not come into contact with other cmponents.Tape Specifications1. Product number formatThe type of package used for shipment is denoted by a symbol suffix after the product number. The method of classification is as below. (this method, however does not apply to products whose electrical characteristics differ from standard Toshiba specifications) (1) Tape Type: T14 (4-mm pitch) (2) Example2. Tape dimensionsUnit: mmSymbol Dimension ToleranceSymbol Dimension ToleranceD 1.5 +0.1/−0 P 2 2.0 ±0.05E 1.75 ±0.1 W 8.0 ±0.3 P 0 4.0 ±0.1 P 4.0 ±0.1 t 0.3 ±0.05 A 0 2.9 ±0.1F 3.5 ±0.05 B 0 3.7 ±0.1 D 1 1.5 ±0.1 K 0 2.3 ±0.1TLBA1100B (T11)Tape typeToshiba product No.0Polarity3. Reel dimensionsUnit: mm4. Leader and trailer sections of tapeNote1: Empty trailer sectionNote2: Empty leader section5. Packing display(1) Packing quantityReel 2,000 pcs Carton 10,000 pcs(2) Packing form: Each reel is sealed in an aluminum pack with silica gel.6. Label format(1) Example: TLBA1100B (T11)P/N:TOSHIBATYPE TLBA1100BADDC(T11) Q’TY2,000 pcsLot Number Key code for TSB 32C 2000(RANK SYMBOL)Use under 5-30degC/6-%RH within 168hSEALED [[G]]/RoHS COMPATIBLE DIFFUSED IN ***** *Y380xxxxxxxxxxxxxxxxxx* ASSEMBLED IN *****(2) Label location• Reel• Carton• The aluminum package in which the reel is supplied also has the label attached to center of one side.RESTRICTIONS ON PRODUCT USE•Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice.•This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission.•Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR APPLICATIONS.•Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document.Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious public impact (“Unintended Use”). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric power, and equipment used in finance-related fields. Do not use Product for Unintended Use unless specifically permitted in this document.•Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part.•Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations.•The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.•ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITYWHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT.•Do not use or otherwise make available Product or related software or technology for any military purposes, including without limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile technology products (mass destruction weapons). Product and related software and technology may be controlled under the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations. •Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations.分销商库存信息: TOSHIBATLBA1100B(T11)。

剧毒物品品名表

剧毒物品品名表中文名：砷酸钡英文名：Barium Arsenate分子式：Ba3(AsO4)2GA No. B1025GB No. 61012UN No. 1557中文名：砷酸铁英文名：Ferric Arsenate分子式：FeAsO4•2H2OGA No. B1026GB No. 61012UN No. 1606中文名：砷酸亚铁英文名：Ferrous Arsenate分子式：Fe3(AsO4)2•6H2OGA No. B1027GB No. 61012UN No. 1608中文名：砷酸铜英文名：Cupric Arsenate; Copper Arsenate分子式：Cu3(AsO4)2GA No. B1028GB No. 61012UN No. 1557中文名：砷酸银英文名：Silver Arsenate分子式：Ag3AsO4GA No. B1029GB No. 61012UN No. 1557中文名：砷酸锌英文名：Zinc Arsenate分子式：Zn3(AsO4)2•8H2OGA No. B1030GB No. 61012UN No. 1712中文名：砷酸汞（砷酸氢汞）英文名：Mercuric Arsenate; Mercury(Ⅱ)Arsenate 分子式：HgHAsO4GA No. B1031GB No. 61012UN No. 1623中文名：砷酸铅英文名：Lead Arsenate分子式：Pb3(AsO4)2GA No. B1032GB No. 61012UN No. 1617中文名：砷酸锑英文名：Antimony Arsenate分子式：SbAsO4GA No. B1033GB No. 61012UN No. 1557中文名：三氟化砷（氟化亚砷）英文名：Arsenic Trifuoride; Arsenic Fluoride分子式：AsF3GA No. B1034GB No. 61013UN No. 1556中文名：三溴化砷（溴化亚砷）英文名：Arsenic Tribromide; Arsenic Bromide; Arsenous Bromide 分子式：AsBr3GA No. B1035GB No. 61014UN No. 1555中文名：三碘化砷（碘化亚砷）英文名：Arsenic Triiodide; Arsenous Iodide分子式：AsI3GA No. B1036GB No. 61014UN No. 1557中文名：二氧化硒（亚硒酐；无水亚硒酸）英文名：Selenium Dioxide; Selenious Acid Anhydride分子式：SeO2GA No. B1037GB No. 61015UN No. 2811中文名：亚硒酸英文名：Selenious Acid分子式：H2SeO3GA No. B1038GB No. --UN No. –中文名：亚硒酸氢钠英文名：Sodium Biselenite; Sodium Hydrogen Selenite分子式：NaHSeO3GA No. B1039GB No. 61016UN No. 2630中文名：亚硒酸镁英文名：Magnesium Selenite分子式：MgSeO3•6H2OGA No. B1040GB No. 61016UN No. 2630中文名：亚硒酸钙英文名：Calcium Selenite分子式：CaSeO3GA No. B1041GB No. 61016UN No. 2630中文名：亚硒酸钡英文名：Barium Selenite分子式：BaSeO3GA No. B1042GB No. 61016UN No. 2630中文名：亚硒酸铝英文名：Aluminium Selenite分子式：Al2(SeO3)3•3H2OGA No. B1043GB No. 61016UN No. 2630中文名：亚硒酸铜英文名：Cupric Selenite; Copper(ic)Selenite 分子式：CuSeO3•2H2OGA No. B1044GB No. 61016UN No. 2630中文名：亚硒酸银英文名：Silver Selenite分子式：Ag2SeO3GA No. B1045GB No. 61016UN No. 2630中文名：亚硒酸铈英文名：Cerium Selenite分子式：Ce2(SeO3)3GA No. B1046GB No. 61016UN No. 2630中文名：硒酸钡英文名：Barium Selenate分子式：BaSeO4GA No. B1047GB No. 61017UN No. 2630中文名：硒酸铜（硒酸高铜）英文名：Cupric Selenate; Copper Selenate 分子式：CuSeO4•5H2OGA No. B1048GB No. 61017UN No. 2630中文名：硒化铁英文名：Iron Selenide; Ferric Selenide分子式：FeSeGA No. B1049GB No. 61018UN No. 3283中文名：硒化锌英文名：Zinc Selenide分子式：ZnSeGA No. B1050GB No. 61018UN No. 3283中文名：硒化镉英文名：Cadmium Selenide分子式：CdSeGA No. B1051GB No. 61018UN No. 3283中文名：硒化铅英文名：Lead Selenicd分子式：PbSeGA No. B1052GB No. 61018UN No. 3283中文名：氯化硒（二氯化二硒）英文名：Selenium Chloride; Selenium Monochloride 分子式：Se2Cl2GA No. B1053GB No. 61019UN No. –中文名：四氯化硒英文名：Selenium Tetrachloride分子式：SeCl4GA No. B1054GB No. 61019UN No. –中文名：溴化硒（二溴化二硒）英文名：Selenium Bromide; Selenium Monobromide 分子式：Se2Br2GA No. B1055GB No. 61019UN No. –中文名：四溴化硒英文名：Selenium Tetrabromide分子式：SeBr4GA No. B1056GB No. 61019UN No. --中文名：氯化钡英文名：Barium Chloride分子式：BaCl2•2H2OGA No. B1057GB No. 61021UN No. 1564中文名：铊（金属铊）英文名：Thallium分子式：TlGA No. B1058GB No. 61022UN No. --中文名：氧化亚铊[一氧化（二）铊]英文名：Thallium Monooxide; Thallous Oxide分子式：Tl2OGA No. B1059GB No. 61023UN No. 1707中文名：氧化铊[三氧化（二）铊]英文名：Thallium Oxide; Thalliu Sesquioxide 分子式：Tl2O3GA No. B1060GB No. 61023UN No. 1707中文名：氢氧化铊英文名：Thallium Hydroxide分子式：TlOHGA No. B1061GB No. 61023UN No. 1707中文名：氯化亚铊（一氯化铊）英文名：Thallous Chloride分子式：TlClGA No. B1062GB No. 61023UN No. 1707中文名：溴化亚铊（一溴化铊）英文名：Thallous Bromide; Thallium Bromide 分子式：TlBrGA No. B1063GB No. 61023UN No. 1707中文名：碘化亚铊（一碘化铊）英文名：Thallous Iodide; Thallium Monoiodide 分子式：TlⅠGA No. B1064GB No. 61023UN No. 1707中文名：三碘化铊英文名：Thallium Triiodide; Thallic lodide分子式：TlⅠ3GA No. B1065GB No. 61023UN No. 1707中文名：硝酸铊（硝酸亚铊）英文名：Thallium Nitrate; Thallous Nitrate分子式：TlNO3GA No. B1066GB No. 61023UN No. 2727中文名：硫酸亚铊（硫酸铊）英文名：Thallous Sulphate; Thallium Sulfate分子式：Tl2SO4GA No. B1067GB No. 61023UN No. 1707中文名：碳酸（亚）铊英文名：Thallous Carbonate; Thallium Carbonate分子式：Tl2CO3GA No. B1068GB No. 61023UN No. 1707中文名：磷酸亚铊（磷酸铊）英文名：Thallous Phosphate; Thallium Orthophosphate 分子式：Tl3PO4GA No. B1069GB No. 61023UN No. 1707中文名：铍（粉）英文名：Beryllium; Glucinium; Glucinum 分子式：BeGA No. B1070GB No. 61024UN No. 1567中文名：氧化铍英文名：Beryllium Oxide; Glucinum Oxide 分子式：BeOGA No. B1071GB No. 61025UN No. 1566中文名：氢氧化铍英文名：Beryllium Hydroxide分子式：Be(OH)2GA No. B1072GB No. 61025UN No. 1566中文名：氯化铍英文名：Beryllium Chloride分子式：BeCl2GA No. B1073GB No. 61025UN No. 1566中文名：碳酸铍英文名：Beryllium Carbonate分子式：(BeO)5CO2•5H2O(近似式)GA No. B1074GB No. 61025UN No. 1566中文名：硫酸铍英文名：Beryllium Sulfate; Glucinum Sulfate分子式：BeSO4•4H2OGA No. B1075GB No. 61025UN No. 1566中文名：硫酸铍钾英文名：Beryllium Potassium Sulfate分子式：BeSO4•K2SO4•2H2OGA No. B1076GB No. 61025UN No. 1566中文名：铬酸铍英文名：Beryllium Chromate分子式：BcrO4GA No. B1077GB No. 61025UN No. 1566中文名：氟铍酸铵（氟化铍铵）英文名：Ammonium Fluoroberyllate; Beryllium Ammonium Fluoride 分子式：(NH4)2BeF4GA No. B1078GB No. 61025UN No. 1566中文名：氟铍酸钠英文名：Sodium Fluoroberyllate分子式：Na2BeF4GA No. B1079GB No. 61025UN No. 1566中文名：四氧化锇[锇（酸）酐]英文名：Osmium Tetroxide; Osmic Acid Anhydride分子式：OsO4GA No. B1080GB No. 61026UN No. 2471中文名：氯锇酸铵（氯化锇铵）英文名：Ammonium Chloroosmate; Osmium Ammonium Chloride 分子式：(NH4)2OsCl6GA No. B1081GB No. 61027UN No. --中文名：五氧化二钒[钒（酸）酐]英文名：Vanadium Pentoxide分子式：V2O5GA No. B1082GB No. 61028UN No. 2862中文名：三氯化钒（氯化钒）英文名：Vanadium Trichloride分子式：VCl3GA No. B1083GB No. 81519UN No. 2475中文名：钒酸钾英文名：Potassium Vanadate分子式：KVO3GA No. B1084GB No. 61029UN No. 2864中文名：偏钒酸钾英文名：Potassium Metavanadate 分子式：KVO3GA No. B1085GB No. 61029UN No. 2864中文名：偏钒酸钠英文名：Sodium Metavanadate分子式：NaVO3•2H2OGA No. B1086GB No. --UN No. --中文名：偏钒酸铵英文名：Ammonium Metavanadate 分子式：NH4VO3GA No. B1087GB No. 61029UN No. 2859中文名：聚钒酸铵（多钒酸铵）英文名：Ammonium Polyvanadate 分子式：(NH4)2O•3V2O5GA No. B1088GB No. 61029UN No. 2861中文名：钒酸铵钠英文名：Sodium Ammonium Vanadate分子式：2NaO•3(NH4)O•8V2O5GA No. B1089GB No. 61029UN No. 2863中文名：砷化汞英文名：Mercury Arsenide; Mercuric Arsenide 分子式：Hg3As2GA No. B1090GB No. 61030UN No. --中文名：硝酸汞（硝酸高汞）英文名：Mercuric Nitrate; Mercury Pernitrate 分子式：Hg(NO3)2GA No. B1091GB No. 61030UN No. 1625中文名：氟化汞（二氟化汞）英文名：Mercuric Fluoride; Mercury Difluoride 分子式：HgF2GA No. B1092GB No. 61030UN No. --中文名：碘化汞（碘化高汞；二碘化汞）英文名：Mercury Iodide; Mercury Biniodie分子式：HgI2GA No. B1093GB No. 61030UN No. 1638中文名：氧化汞（一氧化汞；黄降汞；红降汞）英文名：Mercury Oxide; Mercury Oxide yellow; Mercury Oxide Red 分子式：HgOGA No. B1094GB No. 61509UN No. 1641中文名：亚碲酸钠英文名：Sodium Tellurite分子式：Na2TeO3GA No. B1095GB No. 61510UN No. --中文名：亚硝基铁氰化钠（硝普钠）英文名：Sodium Nitroferricyanide; Sodium Nitroprusside分子式：Na2[Fe(CN)5NO]•2H2OGA No. B1096GB No. --UN No. --中文名：磷化锌英文名：Zinc Phosphide分子式：Zn3P2GA No. B1097GB No. 43038UN No. 1714中文名：溴（溴素）英文名：Bromine分子式：Br2GA No. B1098GB No. 81021UN No. 1744中文名：溴化氢英文名：Hydrogen Bomide, anhydrous分子式：HBrGA No. B1099GB No. 623004*UN No. 1048中文名：锗烷英文名：Germane; Germanium Hydride分子式：GeH4GA No. B1100GB No. 23043UN No. 2192中文名：三氟化硼英文名：Boron Trifluoride分子式：BF3GA No. B1101GB No. 23018*UN No. 1008中文名：三氯化硼[液化的]英文名：Boron Trichloride分子式：BCl3GA No. B1102GB No. 22023UN No. 1741第3类 A级有机剧毒物品中文名：苯胩化（二）氯英文名：Phenylcarbylamined Chloride; Phenyliminophosgene 分子式：C6H5NCCl2GA No. A2001GB No. 61061UN No. 1672中文名：乙撑亚胺（氮丙环；吖丙啶）英文名：Ethyleneimine; Aziridine; Dimethyleneimine分子式：C2H5NGA No. A2002GB No. 61077UN No. 1185中文名：甲基-双（β-氯乙基）胺[氮芥；双（氯乙基）甲胺英文名：Methyl-bis(β-Chloroethyl)Amine分子式：C2H11NCl2GA No. A2003GB No. --UN No. --中文名：甲基-双（β-氯乙基）胺盐酸盐（盐酸氮芥（β）；双（氯乙基）甲胺盐酸盐）英文名：Mechloroethamine Hydrochloride; Methyl-bis-(β-Chloroeth-yl)Amine Hydrochloride 分子式：C5H11NCl2•HClGA No. A2004GB No. --UN No. --中文名：乙基-双（β-氯乙基）胺英文名：Ethyl-Bis(β-Chloroethyl)Amine分子式：C6H13Cl2NGA No. A2005GB No. --UN No. --中文名：三氯三乙胺[禁用]（氮芥气；氮芥A）英文名：Tris-(β-Chloroethyl)Amine分子式：C6H12ClNGA No. A2006GB No. --UN No. --中文名：1,2-二溴-3-丁酮（二溴丁酮）英文名：1,2-Dibromo-3-Butemone;Dibromobutemone分子式：C4H7Br2OGA No. A2007GB No. 61084UN No. 2648中文名：氯苯乙酮[禁用]（苯氯乙酮）英文名：Chlorobenzene Ethyltone分子式：C8H7OClGA No. A2008GB No. --UN No. --中文名：二氯（二）甲醚[对称二氯（二）甲醚]英文名：Dichlorodimethyl Ether; Sym-Dichlorodimethyl Ether 分子式：C2H4Cl2OGA No. A2009GB No. 61086UN No. 2249中文名：二氯二乙基硫醚[禁用]（芥子气；硫芥）英文名：Dichlorodiethyl Sulfide; Mustard Gas分子式：C4H8Cl2SGA No. A2010GB No. 61595UN No. --中文名：乙酸三乙基锡英文名：Acetoxytriethyl Stannane分子式：C8H18O2SnGA No. A2011GB No. --UN No. --中文名：四乙基铅英文名：Tetraethyl Lead分子式：Pb(C2H5)4GA No. A2020GB No. 61097UN No. 1649中文名：乙基二氯胂（氯化乙基胂）英文名：Ethyl Dichloroarsine分子式：C2H5AsCl2GA No. A2020GB No. 61098UN No. 1892中文名：二氯苯胂（苯基二氯胂）英文名：Dichlorophenylarsine; Phenydichloroarsine 分子式：C6H5AsCl2GA No. A2020GB No. --UN No. 1556中文名：二苯（基）氯胂（氯化二苯胂）英文名：Diphenyl Chloroarsine分子式：C12H10AsClGA No. A2020GB No. 61098UN No. 1699中文名：2-氯乙烯基二氯胂[禁用]（路易氏剂）英文名：2-Chlorovinyl Dichloroarsine; Lewiste分子式：C2H2AsCl3GA No. A2021GB No. --UN No. 1556中文名：二苯（基）胺氯胂（吩吡嗪化氯；亚当氏气）英文名：Diphenylamine Chloroarsine; Phenarsazine Chloride 分子式：C12H8(AsCl)(NH)GA No. A2021GB No. 61098UN No. 1698中文名：氟乙酸（氟醋酸）英文名：Fluoroacetic Acid; Fluoroethanoic Acid分子式：C2H3O2FGA No. A2020GB No. 61099UN No. 2642中文名：氟乙酸钠（氟醋酸钠）英文名：Sodium Fluoroacetate分子式：C2H2O2NaFGA No. A2021GB No. 61100UN No. 2629中文名：氟乙酸钾（氟醋酸钾）英文名：Potassium Fluoroacetate分子式：FC2H2O2KGA No. A2020GB No. 61100UN No. 2628中文名：氯甲酸甲酯英文名：Chloromethyl Chloroformate分子式：C2H2O2Cl2GA No. A2021GB No. 61101UN No. 2745中文名：氯甲酸三氯甲酯（双光气）英文名：Trichloromethyl Chloroformete; Diphosgene分子式：C2O2Cl4GA No. A2022GB No. 61101UN No. 2745中文名：异氰酸甲酯（甲基异氰酸酯）英文名：Methyl Isocyanate;Methyl Isomitrile;Isocyanatomethane 分子式：C2H3NOGA No. A2023GB No. 32164UN No. 2480中文名：氟代磺酸甲酯英文名：Methyl Fluorosulfonate分子式：CH3O3SFGA No. A2024GB No. --UN No. --中文名：氟代硫酸甲酯英文名：Fluorosulfuric Acid, Methyl Ester分子式：CH3O3SFGA No. A2025GB No. --UN No. –中文名：二硫代焦磷酸四乙酯英文名：Tetraethyl Dithiopyrophosphate分子式：C8H20O5P2S2GA No. A2026GB No. 61113UN No. 1704中文名：氯磷酸（二）异丙酯英文名：Diisopropyl Fluorophosphate分子式：C6H14FO3PGA No. A2027GB No. 61114UN No. –中文名：硫酸（二）甲酯英文名：Dimethyl Sulfate; Sulfuric Acid Methyl Ester 分子式：(CH3)2SO4GA No. A2028GB No. 61116UN No. 1595中文名：甲基氟膦酸异丙酯[禁用]（沙林）英文名：Sarin; Isopropyl Methyl Phosphonofluoridate 分子式：C4H10O2PFGA No. A2029GB No. --UN No. --中文名：二甲胺氰磷酸乙酯[禁用]（塔崩）英文名：Tabun分子式：C5H11O2PN2GA No. A2030GB No. --UN No. --中文名：甲基硫代膦酸乙酯[禁用]（维埃克斯；VXS）英文名：VX分子式：C11H18ONPSGA No. A2031GB No. ------UN No. ------中文名：甲氟膦酸特己酯[禁用]（索曼）英文名：，Soman分子式：C7H16FO2PGA No. A2032GB No. ------UN No. ------中文名：四氯二苯二恶英（TCDD）英文名：2,3,7,8-Tetrachloro Dibenzo-p-Dioxin分子式：C12H4O2Cl4GA No. A2033GB No. ------UN No. ------中文名：乙氧碇（羟乙基乙氧基去甲哌替啶）英文名：Etoxeridine分子式：C18H27NO4﹒HClGA No. A2034GB No. ------UN No. ------中文名：戊硼烷（五硼烷）英文名：Pentaborane; Pentaboron Nonabydride分子式：B5H9GA No. A2035GB No. 42031UN No. 1380中文名：士的宁（及其盐）（士的年；番木鳖碱；毒鼠碱）英文名：Strychnine分子式：C21H22N2O2GA No. A2036GB No. 61121⊿UN No. 1570中文名：乌头碱（附子精）英文名：Aconitine分子式：C34H47O11NGA No. A2037GB No. ------⊿UN No. ------中文名：中乌头碱英文名：Mesaconitine分子式：C33H45O11NGA No. A2038GB No. ------UN No. ------中文名：阿托品（及其盐）英文名：Atropine分子式：C17H23NO3GA No. A2039GB No. ------UN No. ------中文名：莨菪碱（及其盐）（天仙子胺；菲沃斯碱）英文名：Hyoscyamine分子式：C17H23NO3GA No. A2040GB No. ------UN No. ------中文名：东莨菪碱（及其盐）英文名：Scopolamine分子式：C17H21NO4GA No. A2041GB No. ------UN No. ------中文名：吗啡（及其盐）英文名：Morphine分子式：C17H19O3NGA No. A2042GB No. ------UN No. ------中文名：海洛因（及其盐）（二乙酰吗啡）英文名：Heroin分子式：C17H17ON(C2H3O2)2GA No. A2043GB No. ------UN No. ------中文名：钩吻生物碱（及其盐）（包括钩物素甲、乙、丙、戊、子、丑、寅、卯、辰等）英文名：Gelsomine分子式：C20H22O2N2(钩吻素甲)GA No. A2044GB No. ------UN No. ------中文名：烟碱（尼古丁）英文名：Nicotine分子式：C10H14N2GA No. A2045GB No. 61868UN No. 1654中文名：毒扁豆碱（及其盐）（依色林）英文名：Physostigmine; Eserine分子式：C15H21N3O2GA No. A2046GB No. ------UN No. ------中文名：毒蕈碱英文名：Muscarine分子式：[C9H20NO2]+X- (X为卤素)GA No. A2047GB No. ------UN No. ------中文名：毛果芸香碱（及其盐）（匹鲁卡品）英文名：Pilocarpine分子式：C11H16N2O2GA No. A2048GB No. ------UN No. ------中文名：藜芦碱（赛凡丁）英文名：Veratrine分子式：C32H49NO9GA No. A2049GB No. ------UN No. ------中文名：原藜芦碱（含原藜芦碱A、B）英文名：Protoveratrine分子式：C41H63NO14(原藜芦碱A)C41H63NO15原藜芦碱B）GA No. A2050GB No. ------UN No. ------中文名：麦角胺英文名：Ergotamine分子式：C33H35N5O5GA No. A2051GB No. ------UN No. ------中文名：毒芹碱（及其盐）（2-丙基六氢吡啶）英文名：Coniin(e)分子式：C8H17NGA No. A2052GB No. ------UN No. ------中文名：秋水仙碱英文名：Colchicine; Colchicinum分子式：C22h25NO6GA No. A2053GB No. ------UN No. ------中文名：其它生物碱[符合A级标准的]英文名：-------分子式：------GA No. A2054GB No. ------UN No. ------中文名：毒毛旋花甙G（羊角拗质）英文名：G-Strophanthin分子式：C29H44O12﹒8H2OGA No. A2055GB No. 61121UN No. ------中文名：毒毛旋花甙K英文名：K-Strophanthin分子式：C36H54O14GA No. A2056GB No. 61121UN No. ------中文名：毒毛旋花甙H英文名：H-Strophanthin分子式：C23H32O6GA No. A2057GB No. ------UN No. ------中文名：毒毛旋花甙元英文名：Strophanthindin分子式：C23H32O6GA No. A2058GB No. ------UN No. ------中文名：毒毛旋花甙元K英文名：K-Strophanthindin分子式：C23H32O6GA No. A2059GB No. ------UN No. ------中文名：羊地黄毒甙（毛吉黄甙；毛地黄毒素；狄吉妥辛）英文名：Digitoxine分子式：C41H64O13GA No. A2060GB No. ------UN No. ------中文名：羟基洋地黄毒甙英文名：Gitoxin分子式：C41H64O14GA No. A2061GB No. ------UN No. ------中文名：地高辛（地戈辛；毛地黄叶毒甙）英文名：Digoxin分子式：C41H64O14GA No. A2062GB No. ------UN No. ------中文名：海葱甙（海葱任）英文名：Scillaren分子式：C36H52O13GA No. A2063GB No. ------UN No. ------中文名：海葱糖甙（红海葱甙）英文名：Scilliroside; Gluco-scillaren A分子式：C32H44O12GA No. A2064GB No. ------UN No. ------中文名：花青（矢车菊甙）英文名：Cyanine分子式：C29H35IN2﹒11/2H2OGA No. A2065GB No. ------UN No. ------中文名：其它强心甙[符合A级标准的]英文名：------分子式：------GA No. A2066GB No. ------UN No. ------中文名：黄曲霉毒素（含黄曲霉素B、B1、B2G、G1、G2等）（黄曲霉素）英文名：Aflatoxin分子式：B1:C17H12O6; B2:C17H14O6: G1:C17H12O7; G2:C17H14O7 GA No. A2067GB No. ------UN No. ------中文名：箭毒英文名：Curare分子式：要紧成分C20H23O3N+C19H28O2NGA No. A2068GB No. ------UN No. ------中文名：河豚毒素英文名：Tetrodotoxin分子式：C211H17N3O8GA No. A2069GB No. ------UN No. ------中文名：脱氧河豚毒素英文名：Desoxytetrodotoxin分子式：C11H17N3O7GA No. A2070GB No. ------UN No. ------中文名：甲氧基河豚毒素英文名：Methoxytetrodotoxin分子式：C12H20N3O8GA No. A2071GB No. ------UN No. ------中文名：甲藻毒素（二盐酸盐）[石房蛤毒素（盐酸盐）] 英文名：Saxitoxin (dihydro chloride)分子式：C10H17N7O4﹒2HClGA No. A2072GB No. ------UN No. ------中文名：蓖麻毒蛋白英文名：Ricin(e); Ricinine分子式：C8H8N2O2GA No. A2073GB No. ------UN No. ------中文名：核杀菌素英文名：Nucleocidin分子式：C10H13FN6O6SGA No. A2074GB No. ------UN No. ------中文名：肠毒素英文名：Enterotoxin分子式：GA No. A2075GB No. ------UN No. ------中文名：响尾蛇毒素英文名：Crotoxin分子式：------GA No. A2076GB No. ------UN No. ------中文名：眼镜蛇毒素英文名：Cobrotoxin分子式：C277H435N97O98S8 GA No. A2077GB No. ------UN No. ------中文名：肉毒鱼毒素英文名：Botulinum Toxins分子式：------GA No. A2078GB No. ------UN No. ------中文名：蛤蟆毒英文名：Batracin分子式：C24H33NO4GA No. A2079GB No. ------UN No. ------中文名：箭毒蛙毒素英文名：Batrachotoxin分子式：C31H42N2O6GA No. A2080GB No. ------UN No. ------中文名：相思豆毒素英文名：Abrine分子式：C12H14N2O2GA No. A2081GB No. ------UN No. ------中文名：斑蟊素英文名：Cantharidin分子式：C10H12O4GA No. A2082GB No. ------UN No. ------中文名：木防己苦毒素英文名：Picrotoxin分子式：C15H16O6+C15H18O7=C30H34O13 GA No. A2083GB No. ------UN No. ------中文名：镰刀菌酮X英文名：Fusarenon-X分子式：C17H22O8GA No. A2084GB No. ------UN No. ------中文名：其它生物毒素[符合A级标准的]英文名：------分子式：------GA No. A2085GB No. ------UN No. ------中文名：甲烷磺酰氟（含量>5%）（甲磺酰氟；甲基磺酰氟）英文名：Methanesulfonyl fluoride分子式：CH3SO2FGA No. A2086GB No. ------UN No. ------中文名：吡唑磷（含量＞5%）（彼氧磷）英文名：Pyrazoxon分子式：C8H15N2O4PGA No. A2087GB No. 61126UN No. 2784中文名：对氧磷（含量>3%）英文名：Paraoxon; Mintocol分子式：C10H14O6NPGA No. A2088GB No. 61126UN No. 2784中文名：速灭磷（含量>5%）英文名：Mevinphos分子式：C7H13O6PGA No. A2089GB No. 61126UN No. 3017中文名：丙氟磷（含量>15%）(异丙氟)英文名：Diflupyl; lsofluorphate分子式：C6H14FO3PGA No. A2090GB No. 61126UN No. 3017中文名：特普英文名：TEPP分子式：C8H20O7P2GA No. A2091GB No. 61126UN No. 3017中文名：对硫磷（含量>4%）(1065；乙基对硫磷；一扫光)英文名：Parathion分子式：C10H14NO5PSGA No. A2092GB No. 61126UN No. 3017中文名：治螟磷（含量>10%）(硫特普；触杀灵；苏化203；治螟灵) 英文名：Sulfotep分子式：C8H20O5P2S2GA No. A2093GB No. 61126UN No. 3017中文名：丰索磷（含量＞4%）(丰索硫磷)英文名：Fensulfothion分子式：C11H17O4PS2GA No. A2094GB No. 61126UN No. 3017中文名：果虫磷（含量＞10%）英文名：Cyanthoate分子式：C10H19N2O4PSGA No. A2095GB No. 61126UN No. 3017中文名：治线磷（含量＞5%）（治线灵；硫磷嗪）英文名：Zinophos; Thionazin分子式：C8H13N2O3PSGA No. A2096GB No. 61126UN No. 3017中文名：田乐磷英文名：Demephion分子式：C5H13O3S2PGA No. A2097GB No. 61126UN No. 3017中文名：甲拌磷（含量＞2%）（3911）英文名：Phorate分子式：C7H17O2PS3GA No. A2098GB No. 61126UN No. 3017中文名：特丁磷（含量＞10%）英文名：Terbufos分子式：C9H12O2PS3GA No. A2099GB No. 61126UN No. 3017中文名：地虫磷（含量＞6%）（地虫硫磷）英文名：Fonofos分子式：C10H15OPS2GA No. A2100GB No. 61126UN No. 3017中文名：砜拌磷（含量＞5%）英文名：Oxydisulfoton分子式：C8H19O3PS3GA No. A2101GB No. 61126UN No. 3017中文名：甲氟磷（含量＞2%）（四甲氟）英文名：Dimefox分子式：C4H12FN2OPGA No. A2102GB No. 61126UN No. 3017中文名：八甲磷（含量＞18%）（八甲基焦磷酰胺；希拉登）英文名：Schradan分子式：C8H24N4O3P2GA No. A2103GB No. 61126UN No. 3017中文名：甲基对氧磷（含量＞10%）英文名：Methyl Paraoxon; Phosphoric Acid, Dimethy p-Nitrophenyl 分子式：C8H10NO6PGA No. A2104GB No. ------UN No. ------中文名：胺吸磷（含量＞1%）（阿米吨）英文名：Amiton分子式：C10H24NO3PSGA No. A2105GB No. ------UN No. ------中文名：碳氯灵（含量＞1%）（碳氯特灵）英文名：Isobenzan分子式：C9H4Cl8OGA No. A2106GB No. 61127UN No. 2761中文名：克百威（含量＞1%）（呋喃丹；卡巴呋喃；虫螨威）英文名：Carbofuran; Furadan分子式：C12H15NO3GA No. A2107GB No. 61133UN No. 2757中文名：涕灭威（含量＞1%）（丁醛肟威；涕灭克；铁灭克）英文名：Aldicarb; Temik分子式：C7H14N2O2SGA No. A2108GB No. 61133UN No. 2757中文名：毒鼠磷（含量＞10%）英文名：Phosazetim分子式：C14H13Cl2N2O2PSGA No. A2109GB No. 61135UN No. 2588中文名：溴代毒鼠磷（含量＞10%）英文名：Bromo-Gophacide分子式：C14H13Br2N2O2PSGA No. A2110GB No. 61135UN No. 2588中文名：溴联苯杀鼠迷（含量＞0.5%）（大隆杀鼠剂；大隆；溴敌拿鼠）英文名：Brodifacoum分子式：C31H23BrO3GA No. A2111GB No. 61135UN No. 3027中文名：溴敌隆（含量＞5%）英文名：Bromadiolome分子式：C30H23BrO4GA No. A2112GB No. 61135UN No. ------中文名：扑灭鼠（含量＞0.5%）(普罗米特;灭鼠丹)英文名：Promurit; Muritan分子式：C7H6Cl2N4SGA No. A2113GB No. 61135UN No. 2767中文名：捕灭鼠（含量＞0.5%）(鼠硫脲)英文名：Muritan; Promurit分子式：C7H6Cl2N4SGA No. A2114GB No. 61135UN No. 2767中文名：没鼠命[禁用]（毒鼠强；四二四）英文名：Tetramine分子式：C4H9N4O4S2GA No. A2115GB No. 61135UN No. 3027中文名：鼠立死（含量＞2%）(杀鼠嘧啶)英文名：Crimidine分子式：C7H10ClN3GA No. A2116GB No. 61135UN No. 2761中文名：氟乙酰胺[禁用]（敌蚜胺）英文名：Fluoroacetamide分子式：C2H4FNOGA No. A2117GB No. 61135UN No. 2588中文名：杀它仗（含量＞0.5%）英文名：Flocoumafen; Stratagen分子式：C33H25O4F3GA No. A2118GB No. ------UN No. ------中文名：放线菌酮（含量＞4%）(放线酮；抗农101) 英文名：Cycloheximide分子式：C15H23NO4GA No. A2119GB No. 61137UN No. 2588中文名：六氟丙酮英文名：Hexafluoroacetone分子式：C3F6OGA No. A2120GB No. 23032*UN No. 2420中文名：羟基硫（硫化碳酰）英文名：Carbonyl Sulfide; Carbonyl Sulphide 分子式：COSGA No. A2121GB No. 23033*UN No. 2204中文名：羰基氟（氟化碳酰；碳酰氟；氟光气）英文名：Carbonyl Fluoride分子式：COF2GA No. A2122GB No. 23035*UN No. 2417中文名：过氯酰氟（氟化过氯氧；氟化过氯酰）英文名：Perchloryl Fluoride分子式：ClO3FGA No. A2123GB No. 23036*UN No. 3083中文名：三氟乙酰氯（氯化三氟乙酰）英文名：Trifluoroacetyl Chloride分子式：CF3COClGA No. A2124GB No. 23037*UN No. 3057中文名：碳酰氯（光气）英文名：Carbonyl Chloride; Phosgene 分子式：COCl2GA No. A2125GB No. 23038*UN No. 1076中文名：亚硝酰氯（氯化亚硝酰）英文名：Nitrosyl Chloride分子式：ClNOGA No. A2126GB No. 23039*UN No. 1069中文名：二氯硅烷英文名：Dichlorosilane分子式：H2Cl2Si; SiH2Cl2GA No. A2127GB No. 23042*UN No. 2189中文名：乙烯酮英文名：Ketene分子式：C2H2OGA No. A2128GB No. *UN No. ------中文名：重氮甲烷英文名：Diazomthene分子式：CH2N2GA No. A2129GB No. 11020*UN No. ------中文名：八氟异丁烯（全氟异丁烯）英文名：Octafluoroisobutylene; Perfluoroisobutylene 分子式：C4F8GA No. A2130GB No. 22038*UN No. 2422第4类B类有机剧毒物品中文名：三氯硝基甲烷（氯化苦；硝基三氯甲烷）英文名：Trichloronitromethane; chloropicrin分子式：CC3lNO2GA No. B2001GB No. 61051*UN No. 1580中文名：二氧化丁二烯（双环氧乙烷）英文名：Butadiene Dioxide分子式：C4H6O2GA No. B2002GB No. ------UN No. ------中文名：4-己烯-1-炔-3-醇英文名：4-Hexene-1-yne-3-ol分子式：C6H8OGA No. B2003GB No. ------UN No. ------中文名：5-（氨基甲基）-3-异恶唑醇英文名：Muscimol分子式：C4H6N2O2GA No. B2004GB No. ------UN No. ------中文名：4,6-二硝基邻甲（苯）酚英文名：4,6-Dinitro-o-cresol分子式：OHC6H2CH3(NO2)2GA No. B2005GB No. 61074UN No. 1598中文名：4,6-二硝基邻甲（苯）酚钠英文名：Sodium 4,6-Dinitro-o-cresolate 分子式：(NO2)2C6H2(CH3)ONaGA No. B2006GB No. 41012UN No. 1348中文名：二硝基邻甲酚铵英文名：Ammonium Dinitro-o-Cresolate 分子式：CH3C6H2(NO2)2ONH4GA No. B2007GB No. 61076UN No. 1843中文名：戊硝酚英文名：Dinosam分子式：C11H14N2O5GA No. B2008GB No. ------UN No. ------中文名：2,4-二硝基酚(二硝酚)英文名：4,6-Dinitro-o-cresol分子式：OHC6H2CH3(NO2)2GA No. B2005GB No. 61074UN No. 1598中文名：N-乙烯基乙撑亚胺英文名：N-Vinylethyleneimine分子式：C4H7NGA No. B2010GB No. ------UN No. ------中文名：甲基苄基亚硝胺英文名：Methylbenzylnitrosamine分子式：C8H10N2OGA No. B2011GB No. ------UN No. ------中文名：丙撑亚胺（2-甲基乙撑亚胺）英文名：PropyLeneimine分子式：C3H7NGA No. B2020GB No. ------UN No. 1921中文名：乳酸苯汞三乙醇胺英文名：Phenylmercuric Triethanolammonium Latate 分子式：C12H20HgNO3•C3H5O3GA No. B2020GB No. ------UN No. ------中文名：溴化双吡己胺（溴化双斯的明）英文名：Distigmine Bromide分子式：C22H32Br2N4O4GA No. B2020GB No. ------UN No. ------中文名：一氯乙醛（氯乙醛）英文名：Chloroacetaldehyde分子式：C2H3ClOGA No. B2020GB No. 61079UN No. 2232中文名：丙烯醛英文名：AcroleinGA No. B2021GB No. 31024UN No. 1092中文名：二氯四氟丙酮（敌锈酮）英文名：Dichlorotetrafluoroacetone 分子式：C3Cl2F4OGA No. B2021GB No. 61082UN No. ------中文名：丙酮氰醇（丙酮合氰化氢）英文名：Acetone Cyanohydrin分子式：（CH3）2C(OH)CNGA No. B2020GB No. 61088UN No. 1541中文名：1-羟环丁-1-丁烯-3,4-二酮英文名：Moniliformine分子式：C4H2O3GA No. B2021GB No. ------UN No. ------中文名：2-甲基-1-丁烯-3-酮（甲基异丙烯基甲酮）英文名：2-Methyl-1-butene-3-one分子式：C5H8OGA No. B2020GB No. ------UN No. ------中文名：苯（基）硫醇（苯硫酚；巯基苯；硫代苯酚）英文名：Benzenthiol; Phenyl Mercaptan分子式：C6H5SHGA No. B2021GB No. 61090UN No. 2337中文名：2-巯基丙酸英文名：2-Mercaptopropionic Acid分子式：CH3CH（SH）COOHGA No. B 2022GB No. 61092UN No. 2936中文名：乙酸汞（醋酸汞）英文名：Mercury Acetate分子式：C4H6O4HgGA No. B2023GB No. 61093UN No. 1629中文名：乙酸甲氧基乙基汞（醋酸甲氧基乙基汞）英文名：Methoxyethyl Mercury Acetate分子式：C5H10HgO3GA No. B2024GB No. 61093UN No. 2777中文名：2-巯基丙酸英文名：2-Mercaptopropionic Acid分子式：C3H6O2SGA No. B2022GB No. 61092UN No. 2936中文名：乙酸汞（醋酸汞）英文名：Mercury Acetate分子式：C4H6O4HgGA No. B2023GB No. 61093UN No. 1629中文名：乙酸甲氧基乙基汞（醋酸甲氧基乙基汞）英文名：Methoxyethyl Mercury Acetate分子式：C5H10HgO3GA No. B2024GB No. 61093UN No. 2777中文名：氯化甲氧基乙基汞英文名：Methoxyethyl Mercury Chloride分子式：C3H7OhgClGA No. B2025GB No. 61093UN No. ------中文名：氢氧化苯汞英文名；Phenylmercuric Hydroxide分子式：C6H5HgOHGA No. B2026GB No. 61093UN No. 1894中文名：氯化甲基汞英文名：MethylMercuric Chloride分子式：CH3HgClGA No. B2027GB No. 61093UN No. ------中文名：乙酸苯汞（醋酸苯汞）英文名：Phenyl Mercuric Acetate分子式：C8H8HgO2GA No. B2028GB No. 61129UN No. 1674中文名：甲基汞英文名：Methyl Mercury分子式：CH3HgGA No. B2029GB No. ------UN No. ------中文名：甲酸亚铊（蚁酸亚铊、甲酸铊、蚁酸铊）英文名：Thallium Formate分子式：CHO2TlGA No. B2030GB No. 61095UN No. 1707中文名：乙酸亚铊（乙酸铊、醋酸铊）英文名：Thallium Acetate分子式：C2H2O2TlGA No. B2031GB No. 61095UN No. 1707中文名：丙二酸铊（丙二酸亚铊）英文名：Thallium Malonate分子式：C3H2O4Tl2GA No. B2032GB No. 61095UN No. 1707中文名：硫酸二乙基锡英文名：Diethyltin Sulfate; Tin Ethyl Sulphate 分子式：（C2H5）2SnSO4GA No. B2033GB No. 61096UN No. 3146中文名：硫酸三乙基锡英文名：Triethyltin Sulfate分子式：C6H16O4SSnGA No. B2034GB No. 61096UN No. 3146中文名：酸式硫酸三乙基锡英文名：Triethyltin Hydrogen Sulfate分子式：C6H16SnSO4GA No. B2035GB No. 61096UN No. 3146中文名：二丁基氧化锡（氧化二丁基锡）英文名：Dibutyltin Oxide分子式：C8H18SnO。

B1100-13-F中文资料

e 3B170/B - B1100/B1.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIERFeaturesMaximum Ratings and Electrical Characteristics@ T A = 25°C unless otherwise specified·Guard Ring Die Construction for Transient Protection ·Ideally Suited for Automatic Assembly ·Low Power Loss, High Efficiency ·Surge Overload Rating to 30A Peak·For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Application·High Temperature Soldering: 260°C/10 Second at Terminal ·Lead Free Finish/RoHS Compliant (Note 3)Mechanical Data·Case: SMA / SMB·Case Material: Molded Plastic . UL Flammability Classification Rating 94V-0·Moisture Sensitivity: Level 1 per J-STD-020C ·Terminals: Lead Free Plating (Matte Tin Finish).Solderable per MIL-STD-202, Method 208·Polarity: Cathode Band or Cathode Notch ·Marking: Type Number·SMA Weight: 0.064 grams (approximate)·SMB Weight: 0.093 grams (approximate)Single phase, half wave, 60Hz, resistive or inductive load.For capacitive load, derate current by 20%.Notes: 1. Valid provided that terminals are kept at ambient temperature. 2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.3. RoHS revision 13.2.2003. High Temperature Solder Exemption Applied, see EU Directive Annex Note 7.No Suffix Designates SMA Package “B” Suffix Designates SMB Package0.010.11.0100.20.40.60.81.0I , I N S T A N T A N E O U S F O R W A R D C U R R E N T (A )F V , INSTANTANEOUS FORWARD VOLTAGE (V)F Fig. 2 Typical Forward Characteristics102030400110100I , P E A K F O R W A R D S U R G E C U R R E N T (A )F S M NUMBER OF CYCLES AT 60 HzFig. 3 Max Non-Repetitive Peak Forward Surge Current1010010000.1110100C , T O T A L C A P A C I T A N C E (p F )TV , REVERSE VOLTAGE (V)R Fig. 4 Typical T otal Capacitance0.51.0255075100125150I A V E R A G E F O R W A R D C U R R E N T (A )(A V ),T , TERMINAL TEMPERATURE (°C)T Fig. 1 Forward Current Derating CurveXXX = Product type marking code, ex: B170 (SMA package)XXXX = Product type marking code, ex: B190B (SMB package) = Manufacturers’ code marking YWW = Date code markingY = Last digit of year ex: 2 for 2002 WW = Week code 01 to 52YWW Marking InformationNotes: 4. For Packaging Details, go to our website at /datasheets/ap02007.pdf.* x = Device type, e.g. B180-13-F (SMA package); B1100B-13-F (SMB package).Ordering Information(Note 4)IMPORTANT NOTICEDiodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages.LIFE SUPPORTDiodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated.。

TL1000B变频器说明书

TL1000B变频器说明书
1.请勿对变频器内部的元件进行耐压测试，因变频器所使用的智能功率模块易受高压击穿而损坏。

2.变频器内部电路板上的CMOS IC极易受静电的损坏，故在未做好防静电措施前请勿用手触摸电路板。

3.即使马达是停止的，变频器的主电路端子仍然可能带有危险的高压。

4.只有合格的电机专业人员才可以安装，配线及修理保养变频器。

5.当变频器的某些功能被设定后，可能在电源投入后会立即启动运行马达。

6.请选择安全的区域来安装交流马达驱动器，防止高温及日光直接照射，避免潮湿和水滴的泼溅。

7.请防止小孩或一般无关人员接近变频器。

CL1100中文规格书

管脚描述
管脚号 1 2
3
管脚名 GND GATE
CS
4
INV
5
COMP
6
VDD
I/O
描述
P 直接接地
O 图腾柱栅极驱动功率MOSFET
电流检测输入。
I
连接到MOSFET的电流检测的电阻结点。
辅助绕组进行电压反馈。连接电阻分压器和辅助绕组反映输出电
I
压。PWM占空比周期由EA输出和引脚3的电流检测信号决定。
CL1100
使用说明
CL1100是一款应用于低功率 AC/DC电池充电器和电源适配器的高性能离线式 PWM 控制器，应用于电池充电器和适配器。它利用了原边反馈技术使系统应用中可以节省TL431和光耦以降低成本。专置的频率抖动可以实现高精度恒流/恒压控制，可以满足适配器和充电器的应用需求。
●启动电流和启动控制
CHIPLINK SEMICONDUCTOR
CL1100
原边控制高精度恒压/恒流PWM控制器
概述
CL1100是一款应用于低功率AC/DC电池充电器和电源适配器的高性能隔离式PWM控制器。其利用原边反馈工作原理。因此，TL431和光耦可以被省去。恒压和恒流控制综合属性如图1所示。在恒流控制当中，电流和输出功率设置可以通过CS引脚的感应电阻进行外部检测。在恒压控制当中,多模式运作的使用实现了高性能和高效率。此外还可以通过输出线压降补偿达到良好的负荷调节，器件工作在PFM下恒流模式的大负荷状态以及在轻/中型负载中PWM脉宽调制频率会减少。CL1100提供电源的软启动控制和保护范围内的自动修复功能包括逐周期电流限制，VDD OVP保护功能，VDD电压钳位功能和欠压保护等。专有的频率抖动技术使得良好的EMI性能得以实现。所以CL1100可以达到高精度的恒压和恒流。

英福康氦检仪技术手册

技术手册2003年3月11日2.0版UL1000 Fab 氦检漏仪目录1一般信息1.1 本手册使用符号1.1.1 安全符号1.1.2 指示符1.1.3 真空符号1.1.4 术语定义1.2 INFICON服务的支持1.2.1 维修中心1.3 前言1.3.1 用途1.3.2 技术参数1.3.2.1 物理参数1.3.2.2 电气参数1.3.2.3 其它参数1.3.2.4 环境条件1.4 开箱1.4.1 设备供货范围1.4.2 附件与选件1.4.2.1 吸入器管线SL2001.4.2.2 工具箱1.4.2.3 氦气瓶支架1.4.2.4 ESD 垫层1.4.2.5 手持单元2安装2.1 运输2.2 就位2.3 电连接2.3.1 供电电源2.3.2 数据采集系统的连接2.3.2.1 附件2.3.2.2 数字输出2.3.2.3 数字输入2.3.2.4 记录仪2.3.2.5 RS2322.3.2.6 手持单元2.4 真空连接件2.4.1 进气口2.4.2 排气2.4.3 放空2.4.4 冲洗/气镇3初始运行检查3.1 需要的设备3.2 初始运行说明3.2.1 启动与测量0-23.2.2 内部校准3.2.3 验证4 说明和工作原理4.1 前言4.2 UL1000Fab的组件4.2.1 真空系统4.2.2 控制面板4.2.2.1 液晶显示器4.2.2.2 启动按键4.2.2.3 停止按键4.2.2.4 抑零按键4.2.2.5 菜单按键4.2.2.6 软键4.2.2.7 数值输入4.3 工作模式4.3.1 真空模式4.3.2 吸入器模式5 UL1000Fab的运行5.1 显示屏5.2 起转模式中的显示屏5.3 测量模式中的显示屏5.3.1 校准的调用5.3.2 扬声器音量5.3.3 显示屏的状态线5.3.4 数值显示模式5.3.5 趋向模式6 菜单说明6.1 主菜单6.2 一览6.2.1 线性/对数刻度6.2.2 显示范围自动/手动6.2.3 时间轴6.2.4 对比度6.2.5 待用模式中的本底6.2.6 小数点位数6.2.7 漏率过滤器6.3 模式6.4 触发与警告6.4.1 触发值16.4.2 触发值26.4.3 音量6.4.4 单位6.4.5 警告延迟6.4.6 音响警告型式6.4.6.1 定点0-36.4.6.2 漏率正比6.4.6.3 设点6.4.6.4 触发警告6.5 校准6.6 设定值6.6.1 真空设定值6.6.1.1 放空延迟6.6.1.2 保护功能6.6.1.3 内测试漏孔漏率6.6.1.4 机器因素6.6.2 抑零-时间6.6.3 质量6.6.4 接口6.6.4.1 记录仪输出6.6.5 杂项6.6.5.1 时间和日期6.6.5.3 语言6.6.5.3 校准请求6.6.5.4 电源频率6.6.5.5 服务区间排气过滤器6.6.5.6 服务信息排气过滤器6.6.6 参数保存/载入6.6.6.1 载入参数组16.6.6.2 载入参数组26.7 信息6.7.1 服务6.7.1.1 调试6.7.1.2 因素6.7.1.3 切换灯丝6.7.1.4 高级功能6.7.1.5 手动调谐6.7.1.6 复位功能6.8 查访控制6.8.1 查访校准功能6.8.2 更改菜单-PIN6.8.3 更改设备-PIN6.8.4 抑零7 校准7.1 前言7.2 校准进程7.2.1 内部校准7.2.1.1 自动内部校准7.2.1.2 手动内部校准7.2.2 外部校准8 误差和警告信息8.1 提示0-48.2 信息清单9 接口说明9.1 ASCII-模式9.1.1 误差信息9.1.2 参数9.1.3 实例9.1.4 指令清单9.2 二进制模式9.2.1 实例9.2.2 数据格式9.2.3 误差信息9.2.4 指令10 维护10.1 INFICON服务10.2 维护计划10.2.1 最小维护10.2.2 标准维护10.2.3 高级维护10.3 维护步骤10.3.1 更换排气消音器10.3.2 打开UL1000Fab10.3.3 检查/更换过滤器过滤筛网10.4 涡轮分子泵10.5 涡旋泵附录A 图B 索引0-51一般信息注意我们建议您仔细阅读本使用说明书，以保证从一开始就进入最佳工作状态。

vmc1100b立式加工中心参数

vmc1100b立式加工中心参数VMC1100B是一款立式加工中心，具有多项先进的参数和功能。

下面将详细介绍其技术参数。

1.工作台尺寸：VMC1100B的工作台尺寸为1300mm×600mm，能够满足大多数工件的加工需求。

工作台表面经过镗床加工，平整度高，有利于工件稳定固定。

2.加工行程：该立式加工中心的X轴行程为1100mm，Y轴行程为600mm，Z轴行程为600mm，能够满足大部分加工工件的尺寸需求。

同时，它的运动速度和加速度可调节，可以根据不同材料和加工要求调整，提高加工效率。

3.加工精度：VMC1100B具有优秀的加工精度，其定位精度可达到0.008mm，重复定位精度可达到0.006mm。

这意味着该机床具有较高的加工精度和稳定性，能够满足高精度加工的需求。

4.主轴功率和转速：该机床采用的主轴功率为7.5kW，主轴最高转速可达8000rpm。

高功率的主轴能够满足大部分加工工艺的需求，使加工过程更加快速高效。

5.刀库容量：机床的刀库容量达到24个刀位，可以存储多种不同规格的刀具，方便快速更换刀具，减少换刀时间，提高生产效率。

C控制系统：VMC1100B采用的是常见的致力机床CNC控制系统，具有稳定可靠的性能。

其操作界面简单易用，具有多种功能，包括自动加工、编程、模拟仿真等。

用户可以根据加工要求自定义参数，实现灵活的加工控制。

7.切削进给：该机床的切削进给速度范围为1-10000mm/min，可根据不同加工要求调整切削进给速度，满足不同材料和加工方法的需求。

8.机床重量：机床的整体重量为5500kg，具有较大的稳定性和刚性，能够适应不同材料和复杂加工工艺的需求。

9.冷却系统：VMC1100B配备有高效的冷却系统，能够及时冷却加工过程中产生的热量，保证机床的加工精度和稳定性。

总结：VMC1100B是一款性能优越的立式加工中心，具有大尺寸工作台、长行程、高加工精度等优点。

它采用先进的CNC控制系统，刀库容量大，操作简单，可以满足多种复杂加工工艺的需求。

KA7500B中文资料

KA7500B和TL494是同一种芯片，名字不一样而已TL494中文资料TL494是一种固定频率脉宽调制电路，它包含了开关电源控制所需的全部功能，广泛应用于单端正激双管式、半桥式、全桥式开关电源。

TL494有SO-16和PDIP-16两种封装形式，以适应不同场合的要求。

其主要特性如下：TL494主要特征集成了全部的脉宽调制电路。

片内置线性锯齿波振荡器，外置振荡元件仅两个（一个电阻和一个电容）。

内置误差放大器。

内止5V参考基准电压源。

可调整死区时间。

内置功率晶体管可提供500mA的驱动能力。

推或拉两种输出方式。

TL494外形图TL494引脚图TL494工作原理简述TL494是一个固定频率的脉冲宽度调制电路，内置了线性锯齿波振荡器，振荡频率可通过外部的一个电阻和一个电容进行调节，其振荡频率如下：输出脉冲的宽度是通过电容CT上的正极性锯齿波电压与另外两个控制信号进行比较来实现。

功率输出管Q1和Q2受控于或非门。

当双稳触发器的时钟信号为低电平时才会被选通，即只有在锯齿波电压大于控制信号期间才会被选通。

当控制信号增大，输出脉冲的宽度将减小。

参见图2。

TL494脉冲控制波形图控制信号由集成电路外部输入，一路送至死区时间比较器，一路送往误差放大器的输入端。

死区时间比较器具有120mV的输入补偿电压，它限制了最小输出死区时间约等于锯齿波周期的4%，当输出端接地，最大输出占空比为96%，而输出端接参考电平时，占空比为48%。

当把死区时间控制输入端接上固定的电压（范围在0—3.3V之间）即能在输出脉冲上产生附加的死区时间。

脉冲宽度调制比较器为误差放大器调节输出脉宽提供了一个手段：当反馈电压从0.5V变化到3.5时，输出的脉冲宽度从被死区确定的最大导通百分比时间中下降到零。

两个误差放大器具有从-0.3V到（Vcc-2.0）的共模输入范围，这可能从电源的输出电压和电流察觉得到。

误差放大器的输出端常处于高电平，它与脉冲宽度调制器的反相输入端进行“或”运算，正是这种电路结构，放大器只需最小的输出即可支配控制回路。

纽波特燃油锅炉1100B安装、操作和维护说明书

combustion and ventilation an inlet and outlet opening should be provided at floor and ceiling level. Each opening must have a minimum of one square inch (16.5 sq. cm) of free area for every 1,000 BTU/h (293kW) of input or 140 square inches (903 sq. cm) per one gallon (3.785L) of oil burned per hour. The openings must not be in a position liable to blockage.
The domestic hot water coil is located at the top of the boiler in the hottest zone for an ample supply of hot water and a unique feature of its attachment is the raised coil flange which allows the use of clamping bolts rather than studs, thereby eliminating water leaks caused by broken studs.
A subsidiary of BRADFORD WHITE Cor 2
LAARS HEATING SYSTEMS
TABLE OF CONTENTS
SECTION 1. General Information
1A. Boiler Installation .......................................... 3 1B. Freight Claims .............................................. 3 1C. Boiler Location .............................................. 3 1D. Boiler Clearances (to combustibles) ............. 3 1E. Floor ............................................................. 3 1F. Combustion and Ventilation Air ..................... 3 1G. Chimney and Draft Requirements ................. 3 1H. Jacket (normally fitted) .................................. 3 1I. Oil Burner (normally fitted) ............................ 3 1J. Boiler Controls (normally fitted) ..................... 3 1K. Oil ................................................................. 3

VMC1100B

VMC1100B立式加工中心VMC1100B立式加工中心是一种高效能加工机床。

采用日本FANUC、德国SIEMENS控制系统。

可完成铣、镗、钻、铰、攻丝等多种工序的加工，若选用数控转台，可扩大为四轴控制实现多面加工，广泛应用于高速精密加工及复杂型面的轮廓加工。

一、机床结构1、十字型床鞍工作台布局，结构紧凑，机床大件采用稠筋封闭式框架结构，刚性高，抗振性好，底座、立柱、主轴箱体、十字滑台、工作台等基础件全部采用高强度铸铁，组织稳定；合理的结构程度与加强筋的搭配，保证了基础件的高刚性；宽实的机床底座，箱型腔立柱、负荷全支撑的十字滑台可确保加工时的重负载能力；滚珠丝杆和伺服电机以绕性联轴器直联，效率高，背隙小。

2、立式主轴结构，主轴组整套进口，无论在高速或低速铣钻，均能持稳，确保最佳的加工精度；3、标准配置FANUC 0i-MD 全数字式AC伺服系统，主轴、三轴伺服同CNC控制系统，αi系列。

主传动采用FANUC伺服主轴电机、同步齿形带传动，传动噪声低。

对各类零件加工的适应能力较强。

二、性能特点1、工作台尺寸及三向行程加大，适合更大尺寸零件的加工。

2、铸件结构经过机床动力学分析和有限元分析，使其几何结构更加合理。

加之与加强筋的恰当搭配，保证了基础件的高刚性。

3、大件粗、精铣类加工均在进口五面体加工中心上，而导轨由进口WARLDRICH精密导轨磨床精磨。

4、台湾进口高性能主轴组，选用精密级斜角滚珠轴承，搭配前四后二结构。

无论在高速或低速铣钻，均能确保最佳加工精度。

5、滚珠丝杠两端均给予预拉伸，大大增加了传动刚度并消除了快速运动时产生的热变形影响。

通过高精度激光螺距、间隙补偿，使各轴移动位置准确，确保机床的定位精度和重复定位精度。

6、主轴箱移动（Z轴）配有导向平衡锤装置。

即使在高速移动时，配重也不产生晃动。

配重与主轴箱重量比例精确可获得最佳的加工特性。

且使Z轴驱动电机具有良好的负载特性。

7、大罩内侧配有强力冲屑装置。

IBR1100 IBR1150商品说明书

INTRODUCTIONWHAT’S IN THE BOX• Ruggedized router with integrated business-class 3G/4G modem; includes integrated mounting plate• Two meter locking power and GPIO cable (direct wire)• Quick Start Guide with warranty informationNOTE: Due to the diverse needs of customers, the COR IBR1100/IBR1150 package does not include a power adapter or antennas. See the Accessories section below for several power and antenna options.KEY FEATURESWAN• Dual-modem capable with optional IBR1100/IBR1150 Dual-Modem Dock• LP6: LTE Advanced LTE/HSPA+ (SIM-based Auto-Carrier Selection for all North American and European carriers)• LPE: 4G LTE/HSPA+/EVDO (multi-carrier)• LP3: 4G LTE/HSPA+ (Europe, EMEA, and Australia/New Zealand)• WiFi as WAN¹, with WPA2 Enterprise Authentication for WiFi-as-WAN³• Failover/Failback• Load Balancing• Advanced Modem Failure Check• WAN Port Speed Control• WAN/LAN Affinity• IP Passthrough• StandbyLAN• VLAN 802.1Q• DHCP Server, Client, Relay• DNS and DNS Proxy• DynDNS• UPnP• DMZ• Multicast/Multicast Proxy• QoS (DSCP and Priority Queuing)• MAC Address FilteringWIFI1• Dual-Band Dual-Concurrent• 802.11 a/b/g/n/ac• Up to 128 connected devices (64 per radio – 2.4 GHz and 5 GHz)• Multiple SSIDs: 2 per radio (4 total)• WPA2 Enterprise (WiFi)• Hotspot/Captive Portal• SSID-based Priority• Client Mode (5 GHz only) for faster data offloadMANAGEMENT• Cradlepoint Enterprise Cloud Manager²• Web UI, API, CLI• Active GPS support on all models• Data Usage Alerts (router and per client)• Advanced Troubleshooting (support)• Device Alerts• SNMP• SMS control• Serial Redirector• Auto APN RecoveryVPN AND ROUTING• IPsec Tunnel – up to five concurrent sessions• L2TP³• GRE Tunnel• OSPF/BGP/RIP³• Route Filters (Access Control Lists, Prefix Filters, Route Maps, Communities for BGP)• Per-Interface Routing• Routing Rules• Policy-based Routing• NAT-less Routing• Virtual Server/Port Forwarding• NEMO/DMNR³• IPv6• VRRP³• STP³• NHRP³• VTI Tunnel support• OpenVPN support• CP Secure VPN compatible• Serial PAD ModeSECURITY• RADIUS and TACACS+ support*• 802.1x authentication for Ethernet• Zscaler integration³• Certificate support• ALGs• MAC Address Filtering• Advanced Security Mode (local user management only)• Per-Client Web Filtering• IP Filtering• Content Filtering (basic)• Website Filtering• Zone-Based Object Firewall with host address (IP or FQDN), port, and mac address*-Native support for authentication. Authorization and accounting support through hotspot/captive portal services. CLOUD OPTIMIZED IP COMMUNICATIONS• Automated WAN Failover/Failback support• WAN Affinity and QoS allow prioritization of VoIP services• Advanced VPN connectivity options to HQ• SIP ALG and NAT to allow VoIP and UC communications to traverse firewall• MAC Address Filtering• 802.1p/q for LAN QoS segmentation and treatment of VoIP on LAN• Private Network support (wired and 4G WAN)• Cloud-based management²1 – WiFi-related functions are only supported on IBR1100 models2 – Enterprise Cloud Manager requires a subscription3 – Requires an Extended Enterprise LicenseSPECIFICATIONSWAN:• Dual-modem capable with optional IBR1100/IBR1150 Dual-Modem Dock• Integrated LP6 Category 6 LTE Advanced LTE modem (with DC-HSPA+ failover) or LPE 4G LTE modem (with HSPA+/ EVDO/3G and 2G failover) or LP3 4G LTE modem (with HSPA+ and 2G failover)• Three LAN/WAN switchable 10/100 Ethernet ports – one default WAN (cable/DSL/T1/satellite/Metro Ethernet)• WiFi as WAN, Metro WiFi; 2x2 MIMO “N” 2.4 GHz or 5 GHz; 802.11 a/b/g/n/ac (IBR1100 only)LAN:• Dual-band dual-concurrent WiFi; 802.11 a/b/g/n/ac (IBR1100 only)• Three LAN/WAN switchable 10/100 Ethernet ports – two default LAN• Serial console support for out-of-band management of a connected devicePORTS:• Power• 2-wire GPIO• Add three more GPIO ports with optional Serial-to-GPIO cable (see Accessories section below)• USB 2.0• Three Ethernet LAN/WAN• Two cellular antenna connectors (SMA)• One active GPS antenna connector (SMA)• Two WiFi antenna connectors (R-SMA)• Serial DE-9 (commonly called “DB-9”) connector – RS-232 (out-of-band management of an external device requires a null modem adapter/cable)TEMPERATURE:• All models: −30 °C to 70 °C (−22 °F to 158 °F) ambient air operating• All models: −40 °C to 85 °C (−40 °F to 185 °F) storage• Includes temperature sensor with options for alerts and automatic shutoffHUMIDITY (non-condensing):• 5% to 95% operating• 5% to 95% storagePOWER:• DC input steady state voltage range: 9–36 VDC (requires inline fuse for vehicle installations)• For 9–24 VDC installations, use a 3 A fuse• For > 24 VDC installations, use a 2.5 A fuse• Reverse polarity and transient voltage protection per ISO 7637-2• Ignition sensing (automatic ON and time-delay OFF)• Power consumption:• Idle: typical=400mA@12VDC (4.8W); worst case=800mA@12VDC (9.6W)4• Tx/Rx: typical=650mA@12VDC (7.8W); worst case=1300mA@12VDC (15.6W)• 12VDC 2A adapter recommendedWIFI POWER:• 2.4 GHz band: 17 dBm conducted• 5 GHz band: 15 dBm conductedSIZE: 5.3 x 4.4 x 1.4 in (134 x 112 x 35 mm)WEIGHT: 16.1 oz (457 g)CERTIFICATIONS:• FCC, CE, IC• WiFi Alliance (IBR1100 only) – 802.11a/b/g/n certified, 802.11ac supported• Safety: UL/CUL, CB Scheme, EN60950-1• Hazardous Locations: Class I, Div. 2• Shock/Vibration/Humidity: compliant with MIL STD 810G and SAEJ1455• Ingress Protection: compliant with IP64 (includes protection from dust and splashing water)• Materials: WEEE, RoHS, RoHS-2, California Prop 65• Vehicle: E-Mark, compliant with ISO 7637-2• Telecom: PTCRB/CTIA, GCF-CCGPS• GPS Protocols: TAIP and NMEA 0183 V3.0• Satellite channels: Maximum 30 channels (16 GPS, 14 GLONASS), simultaneous tracking• Concurrent standalone GPS, GLONASS, BeiDou and Galileo (LP6 models only)• 1 Hz refresh rate• Accuracy:• < 2m: 50%• < 5m: 90%• Horizontal: < 2m (50%); < 5m (90%)• Altitude: < 4m (50%); < 8m (90%)• Velocity: < 0.2 m/s• Acquisition (measured with signal strength = -135dBm):• Hot start: 1 second• Warm start: 29 seconds• Cold start: 32 seconds• Sensitivity• Tracking: −160 dBm (tracking sensitivity is the lowest GNSS signal level for which the device can still detect an in-view satellite 50% of the time when in sequential tracking mode)• Acquisition (standalone): −145 dBm (acquisition sensitivity is the lowest GNSS signal level for which the device can still detect an in-view satellite 50% of the time)• Operational limits: altitude < 6000 m or velocity < 100 m/s (either limit may be exceeded, but not both) ACCESSORIESBecause of the diversity of customer needs, the COR IBR1100/IBR1150 does NOT include a power adapter or antennasin the box (it does include a direct wire power/GPIO cable for vehicle installation). Cradlepoint offers several accessory options for dual-modem capability, power and antennas:DUAL-MODEM DOCKIBR1100/IBR1150 Dual-Modem Dock (Part # 170675-000), FirstNet/Band 14 ready integrated 4G LTE modem:• MC400L2 (FirstNet/Band 14 LTE modem)5||• MC400LP6 (North America, Europe)• MC400LP4 (AT&T, Verizon, T-Mobile and Canada)• MC400LPE-VZ (Verizon)• MC400LPE-AT (AT&T)• MC400LPE-SP (Sprint)• MC400LPE-GN (generic – for use on T-Mobile in the U.S. and Rogers, Bell, & TELUS in Canada)• MC400LP3-EU (Europe)POWERWall options• COR IBR1100/IBR1150 extended temperature (−30 °C to 70 °C) 12VDC 2A locking power adapter – requires separate line cord (Part # 170648-000)• Line cord for North America (Part # 170623-001)• Line cord for EU (Part # 170623-002)• Line cord for UK (Part # 170623-003)• COR 12VDC 2A locking power adapter with 0 °C to 40 °C temperature range – includes US, EU, and UK plugs (Part # 170584-002)NOTE:Cradlepoint primarily recommends the extended temperature adapter because it covers the COR IBR1100/IBR1150 full temperature range of −30 °C to 70 °C. Cost-sensitive customers that intend to use the IBR1100/IBR1150 in temperature-controlled office environments can order the 170584-002 adapter, but it limits the operating temperature range to 0 °C to 40 °C.Vehicle options• Vehicle locking power adapter for COR (Part # 170635-000)• Two meter locking power and GPIO cable (direct wire) for replacement – included by default (Part # 170585-000) Adapters• Barrel to 4-pin power adapter (Part # 170665-000)• Serial-to-GPIO cable (Part # 170676-000)ANTENNAS – 3G/4G Modem, WiFi, & GPS• 700 MHz – 2700 MHz Wide Band Directional Antenna (Yagi/Log- Periodic) Part #: 170588-000• 12” Mag-Mount Antenna with SMA Male Connector Part #: 170605-000• 4” Mini Mag-Mount Antenna with SMA Male Connector Part #: 170606-000• 2.4/5 GHz Dual-band Dual-concurrent WiFi Antenna Part #: 170628-000 (WiFi models only)• Universal 3G/4G/LTE Modem Antenna Part #: 170649-000• GPS Screw-Mount Antenna Part #: 170651-000• GPS Mag-Mount Antenna Part #: 170652-000• Multi-Band Omni-Directional Antenna Part #: 170668-000• Indoor/Outdoor Panel Patch Part #: 170669-000Vehicle Antennas• 3-in-1 GPS & Modem Screw-Mount Part #: 170653-000• 3-in-1 Adhesive-Mount Antenna Part #: 170653-001• 5-in-1 GPS, Modem & WiFi Screw-mount Part #: 170654-000• Low Profile 5-in-1 MIMO LTE, MIMO WiFi (2.4/5Ghz), & GPS Screw Mount Antenna with 5M Cables Part #: 170654-001See the Cradlepoint antenna accessories page for more information about antennas. Also see the Antenna Orderingand Installation Guide, available as a PDF in the Resources section of antenna and router product pages.6BUSINESS-GRADE MODEM SPECIFICATIONSCOR IBR1100/IBR1150 LP6 models include an integrated LTE Advanced Category 6 4G LTE modem. The LP6 modems support SIM-Based Auto-Carrier selection so there is only one model for all of North America. Simply insert the SIMand wait for the router to automatically detect the SIM and establish a connection.The LTE bands certified for each carrier are listed below.COR IBR1100LP6-NA, COR IBR1150LP6-NA, COR IBR1100LP6-EU• Technology: LTE Advanced, DC-HSPA+• Downlink Rates: LTE 300 Mbps, DC-HSPA+ 42.2 Mbps• Uplink Rates: LTE 50 Mbps, DC-HSPA+ 5.76 Mbps• Frequency Bands:• LTE Bands 1-5, 7, 8, 12, 13, 17, 20, 25, 26, 29, 30, 41• Verizon: 2, 4, 5, 13 (XLTE support w/carrier aggregation)• AT&T: 2, 4, 5, 12/17, 29, 30• Sprint: 25, 26, 41 (LTE Plus Support)• T-Mobile: 2, 4, 12 (T-Mobile Wideband LTE Support)• Carrier Aggregation:• 1+ 8• 2+ 2/5/12 (17 w/MFBI)/13/29• 3+ 7/20• 4+ 4/5/12 (17 w/MFBI)/13/29• 5+ 2/4/30• 7+ 3/7/20• 8+ 1• 12 (17 w/MFBI) + 2/4/30• 13+ 2/4• 20+ 3/7• 30+ 5/12 (17 w/MFBI)• 41+ 41• Fallback: WCDMA/DC-HSPA+ (42/5.76 Mbps): Bands 1, 2, 3, 4, 5, 8• Power: LTE 23 dBm +/− 1, DC-HSPA+ 23 dBm +/− 1• Antennas: two SMA male (plug), finger tighten only (maximum torque spec is 7 kgfcm)• GPS: active GPS support• SMS: SMS support• Industry Standards & Certs: CE, FCC, GCF-CC, IC, PTCRB, AT&T, Sprint, VerizonCOR IBR1100/IBR1150 LPE models include an integrated 4G LTE modem – specific model names include a specific modem (e.g., the COR IBR1100LPE-VZ includes a Verizon LTE modem).Please note that LPE models are flexible and support bands for multiple cellular providers; however, only thefrequency bands in bold below are supported by the listed provider.COR IBR1100LPE-VZ, COR IBR1150LPE-VZ – 4G LTE/HSPA+/EVDO for Verizon• Technology: LTE, HSPA+, EVDO Rev A• Downlink Rates: LTE 100 Mbps, HSPA+ 21.1 Mbps, EVDO 3.1 Mbps (theoretical)• Uplink Rates: LTE 50 Mbps, HSPA+ 5.76 Mbps, EVDO 1.8 Mbps (theoretical)• Frequency Bands:• LTE Band 2 (1900 MHz), Band 4 – AWS (1700/2100 MHz), Band 5 (850 MHz), Band 13 (700 MHz), Band 17 (700 MHz), Band 25 (1900 MHz)• HSPA+/UMTS (850/900/1900/2100 MHz, AWS)• GSM/GPRS/EDGE (850/900/1800/1900 MHz)• CDMA EVDO Rev A/1xRTT (800/1900 MHz)• Power: LTE 23 dBm +/− 1, HSPA+ 23 dBm +/− 1, EVDO 24 dBm +0.5/−1 (typical conducted)7||• Antennas: two SMA male (plug), finger tighten only (maximum torque spec is 7 kgfcm)• GPS: active GPS support• Industry Standards & Certs: FCC, VerizonCOR IBR1100LPE-AT, COR IBR1150LPE-AT – 4G LTE/HSPA+/EVDO for AT&T• Technology: LTE, HSPA+, EVDO Rev A• Downlink Rates: LTE 100 Mbps, HSPA+ 21.1 Mbps, EVDO 3.1 Mbps (theoretical)• Uplink Rates: LTE 50 Mbps, HSPA+ 5.76 Mbps, EVDO 1.8 Mbps (theoretical)• Frequency Bands:• LTE Band 2 (1900 MHz), Band 4 – AWS (1700/2100 MHz), Band 5 (850 MHz), Band 13 (700 MHz), Band 17 (700 MHz), Band 25 (1900 MHz)• HSPA+/UMTS (850/900/1900/2100 MHz, AWS)• GSM/GPRS/EDGE (850/900/1800/1900 MHz)• CDMA EVDO Rev A/1xRTT (800/1900 MHz)• Power: LTE 23 dBm +/− 1, HSPA+ 23 dBm +/− 1, EVDO 24 dBm +0.5/−1 (typical conducted)• Antennas: two SMA male (plug), finger tighten only (maximum torque spec is 7 kgfcm)• GPS: active GPS support• Industry Standards & Certs: PTCRB, FCC, IC, AT&TCOR IBR1100LPE-SP, COR IBR1150LPE-SP – 4G LTE/HSPA+/EVDO for Sprint• Technology: LTE, HSPA+, EVDO Rev A• Downlink Rates: LTE 100 Mbps, HSPA+ 21.1 Mbps, EVDO 3.1 Mbps (theoretical)• Uplink Rates: LTE 50 Mbps, HSPA+ 5.76 Mbps, EVDO 1.8 Mbps (theoretical)• Frequency Bands:• LTE Band 2 (1900 MHz), Band 4 – AWS (1700/2100 MHz), Band 5 (850 MHz), Band 13 (700 MHz), Band 17 (700 MHz), Band 25 (1900 MHz)• HSPA+/UMTS (850/900/1900/2100 MHz, AWS)• GSM/GPRS/EDGE (850/900/1800/1900 MHz)• CDMA EVDO Rev A/1xRTT (800/1900 MHz)• Power: LTE 23 dBm +/− 1, HSPA+ 23 dBm +/− 1, EVDO 24 dBm +0.5/−1 (typical conducted)• Antennas: two SMA male (plug), finger tighten only (maximum torque spec is 7 kgfcm)• GPS: active GPS support• Industry Standards & Certs: FCC, SprintCOR IBR1100LP3-EU, COR IBR1150LP3-EU – 4G LTE/HSPA+ for Europe• Technology: LTE, HSPA+• Downlink Rates: LTE 100 Mbps, HSPA+ 21.1 Mbps (theoretical)• Uplink Rates: LTE 50 Mbps, HSPA+ 5.76 Mbps (theoretical)• Frequency Bands:• LTE Band 1 (2100 MHz), Band 3 (1800 MHz), Band 7 (2600 MHz), Band 8 (900 MHz), Band 20 (800 MHz)• HSPA+/UMTS (800/850/900/1900/2100 MHz)• GSM/GPRS/EDGE Quad-Band (850/900/1800/1900 MHz)• Power: LTE Band 1/3/8/20 – 23 dBm +/− 1; LTE Band 7 – 22 dBm +/− 1, HSPA+ 23 dBm +/− 1 (typical conducted)• Antennas: two SMA male (plug), finger tighten only (maximum torque spec is 7 kgfcm)• GPS: active GPS support• Industry Standards & Certs: CE, GCF-CCCOR IBR1100LPE-GN, COR IBR1150LPE-GN – 4G LTE/HSPA+/EVDO (generic – for use on T-Mobile and U.S. Cellular inthe U.S. and Rogers, Bell, & TELUS in Canada)• Technology: LTE, HSPA+, EVDO Rev A• Downlink Rates: LTE 100 Mbps, HSPA+ 21.1 Mbps, EVDO 3.1 Mbps (theoretical)• Uplink Rates: LTE 50 Mbps, HSPA+ 5.76 Mbps, EVDO 1.8 Mbps (theoretical)• Frequency Bands:• LTE Band 2 (1900 MHz), Band 4 (AWS), Band 5 (850 MHz), Band 13 (700 MHz), Band 17 (700 MHz), Band 25 (1900 MHz)8• HSPA+/UMTS (850/900/1900/2100 MHz, AWS)• GSM/GPRS/EDGE (850/900/1800/1900 MHz)• CDMA EVDO Rev A/1xRTT (800/1900 MHz)•Power: LTE 23 dBm +/− 1, HSPA+ 23 dBm +/− 1, EVDO 24 dBm +0.5/−1 (typical conducted)•Antennas: two SMA male (plug), finger tighten only (maximum torque spec is 7 kgfcm)•GPS: active GPS support • Industry Standards & Certs: PTCRB, FCC, ICHARDWARE 3G/4G AntennaConnector (SMA)RS-232 Port (female)3G/4G Antenna Connector(SMA)Reset ButtonGPS Connector (SMA)WiFi Antenna Connector* (Reverse SMA)USB 2.0 Port 10/100 Ethernet Port (Configurable: LAN or WAN Default: WAN10/100 Ethernet Ports (Configurable: LAN or WANDefault: LAN)Power Port WiFi Antenna Connector* (Reverse SMA)* - only on IBR1100POWER The Cradlepoint IBR1100/IBR1150 must be powered using an approved 9-36 VDC power source.• Blue = Powered ON.• No Light = Not receiving power. Check the power switch and the power source connection.• Flashing Amber = Attention. Open the administration pages and check the router status.2.4GHz 5GHz WiFi BROADCAST These two LEDs indicate activity on the WiFi broadcast for both the 2.4 GHz and 5 GHz bands.• 2.4GHz (green) = 2.4 GHz WiFi is on and operating normally.• 5GHz (blue) = 5 GHz WiFi is on and operating normally.EXTERNAL USB MODEM Indicates the status of external USB modem.Both internal and external USB modems have the following LED indicators:• Green = Modem has established an active connection.• Blinking Green = Modem is connecting.• Amber = Modem is not active.• Blinking Amber = Data connection error. No modem connection possible.• Blinking Red = Modem is in the process of resetting.INTEGRATED MODEM Indicates information about the integrated modem.• Green = Connected to integrated modem.SIGNAL STRENGTH Blue LED bars indicate the active modem’s signal strength.• 4 Solid Bars = Strongest signal.• 1 Blinking Bar = Weakest signal. (A blinking bar indicates half of a bar.)ADDITIONAL LED INDICATIONS• Several different LEDs flash when the factory reset button is detected.• Two of the modem LEDs blink red in unison for 10 seconds when there is an error during firmware upgrade.SUPPORT AND WARRANTYCradleCare Support available in the US and Canada with technical support, software upgrades, and advanced hardware exchange – 1-, 3-, and 5-year options.Three-year limited hardware warranty available world-wide on IBR1100/IBR1150 series products when purchased from an approved Cradlepoint Partner or Distributor – extend warranty to 5 years.。

TC100B数据手册V1.3中文手册发布

青岛鼎信通讯股份有限公司目录1概述 (1)2功能特点 (1)3原理框图 (1)4引脚定义 (2)4.1 芯片引脚图 (2)4.2 引脚说明 (2)5功能描述 (3)5.1供电电源 (3)5.2过流保护功能 (3)5.3接收发送控制 (3)5.4数据收发 (3)6电气参数 (4)6.1额定直流电气参数 (4)6.2交流电气指标 (5)6.3电气特性图 (5)6.4ESD特性 (6)7封装尺寸 (7)8参考电路 (8)8.1典型应用电路 (8)8.2关键器件选型 (8)1概述XY•CN-PDC总线是一种可供电、无极性、两线制通信机制，具有通讯设备容量大，通讯速率高，设计简单，布线方便，抗干扰能力强等特点。

采用《可供电分布式控制协议XY•CN-PDC》，可保证在252个设备组网情况下，任一设备事件上报时间小于100mS，多点设备同时上报逐一提取，不会产生网络冲突。

XY•CN-PDC总线特别适用于三表集抄、智能家居控制、消防报警及联动控制、楼宇自动化控制等系统。

XY•CN-PDC总线采用主从方式通讯，TC100B芯片实现主站的通讯接口功能，TC001B芯片实现从站的通讯接口功能。

2功能特点静态功耗典型值小于1mA；工作电压范围宽：12V～36V；自带内部稳压输出：+5V，10mA；下行发码满幅电压调制，上行收码电流环解调，抗干扰能力强；最多可挂接252个节点设备；通讯距离1200m，上行通讯速率可达19200bps，下行通讯速率可达9600bps；采用半双工通讯；小体积QFN-16封装；可隔离设计保证电磁兼容特性；功率器件外置，芯片不易损坏；工作温度：-40℃~ +85℃。

3原理框图图1 TC100B原理框图4 引脚定义4.1 芯片引脚图T X DI D E TV O U TTREORXDBUSL GNDV D DV D E T REVINVBBUSHVCCN CR B图2 TC100B 芯片引脚图4.2注：当输入+5V/+3.3V 时，RXD 和EO 输出的高电平为+5V/+3.3V ，低电平为0V 。

SB1100中文资料

Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Device
150 0.5 10 30 110 160 180 1100 850 700
Units
mV mA mA mA pF
2001 Fairchild Semiconductor Corporation
SB120-SB1100, Rev. C
SB120-SB1100
Schottky Rectifier
ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™
DISCLAIMER
FAST ® FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™
Forward Current, IF [A]
SB1100
0.5
1
SB150-SB160
0.25
0