AOD417

Symbol V DS V GSI DM I AR E AR SymbolTyp Max 16.7254050R θJC2.53Maximum Junction-to-Case DSteady-State°C/WThermal CharacteristicsParameterUnits Maximum Junction-to-Ambient A t ≤ 10sR θJA °C/W Maximum Junction-to-Ambient A Steady-State °C/W T =70°CPower Dissipation AT A =25°C P DSM Repetitive avalanche energy L=0.3mH CPower Dissipation B T C =25°C P D T C =100°C Avalanche Current CContinuous DrainB,GUnits Parameter T A =25°CGT A =100°CAbsolute Maximum Ratings T A =25°C unless otherwise noted I D Gate-Source Voltage Drain-Source Voltage Pulsed Drain Current CAOD417P-Channel Enhancement Mode Field Effect Transistor100% UIS Tested! 100% Rg Tested!General DescriptionThe AOD417 uses advanced trench technology to GD-PAKTop ViewSBottom ViewDGSSymbolMin TypMaxUnits BV DSS -30V -1T J =55°C -5I GSS ±100nA V GS(th)-1-1.9-3V I D(ON)-60A 2734T J =125°C 364055m Ωg FS 18S V SD -0.75-1V I S-6A C iss 920pF C oss 140pF C rss 90pF R g69ΩQ g (10V)16.2nC Q g (4.5V)8.2nC Q gs 2.9nC Q gd 3.6nC t D(on)8ns t r 30ns t D(off)22ns t f 26ns t rr 23ns Q rr14nCTHIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.Maximum Body-Diode Continuous CurrentInput Capacitance Output CapacitanceTurn-On DelayTime DYNAMIC PARAMETERS V GS =0V, V DS =-15V, f=1MHz Gate Drain Charge Total Gate Charge (10V)V GS =-10V, V DS =-15V, I D =-20ATurn-On Rise Time Turn-Off DelayTime V GS =-10V, V DS =-15V, R L =0.75Ω,R GEN =0.75ΩGate resistanceV GS =0V, V DS =0V, f=1MHzTurn-Off Fall TimeSWITCHING PARAMETERSTotal Gate Charge (4.5V)Gate Source Charge m ΩV GS =-4.5V, I D =-7AI S =-1A,V GS =0VV DS =-5V, I D =-20A R DS(ON)Static Drain-Source On-ResistanceForward Transconductance Diode Forward VoltageI DSS µA Gate Threshold Voltage V DS =V GS I D =-250µA V DS =-24V, V GS =0VV DS =0V, V GS =±20V Zero Gate Voltage Drain Current Gate-Body leakage current Electrical Characteristics (T J =25°C unless otherwise noted)STATIC PARAMETERS ParameterConditions Body Diode Reverse Recovery TimeBody Diode Reverse Recovery Charge I F =-20A, dI/dt=100A/µsDrain-Source Breakdown Voltage On state drain currentI D =-250µA, V GS =0V V GS =-10V, V DS =-5V V GS =-10V, I D =-20AReverse Transfer Capacitance I F =-20A, dI/dt=100A/µsA: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power dissipation P DSM is based on R θJA (<10s) and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be u sed if the PCB allows it.B. The power dissipation P D is based on T J(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used.C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C.D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuminga maximum junction temperature of T J(MAX)=175°C.G. The maximum current rating is limited by bond-wires.H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The SOA curve provides a single pulse rating.*This device is guaranteed green after data code 8X11 (Sep 1ST 2008).Rev1: Sep. 2008TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICSVdsChargeGate Charge Test Circuit & WaveformVddVdsIdVgsUnclamped Inductive Switching (UIS) Test Circuit & Waveforms2E = 1/2 LI AR ARBV DSSI ARVdd VddResistive Switching Test Circuit & Waveforms。