L182中文资料

HiPerFRED TM Epitaxial Diode
with soft recovery
Features
q
International standard package q Planar passivated chips q Very short recovery time
q Extremely low switching losses q Low I RM -values
q Soft recovery behaviour q
Epoxy meets UL 94V-0
Applications
q
Antiparallel diode for high frequency switching devices q Antisaturation diode q
Snubber diode
q
Free wheeling diode in converters and motor control circuits
q
Rectifiers in switch mode power supplies (SMPS)q Inductive heating
q Uninterruptible power supplies (UPS)q
Ultrasonic cleaners and welders
Advantages
q
Avalanche voltage rated for reliable operation
q
Soft reverse recovery for low EMI/RFI
q
Low I RM reduces:
-Power dissipation within the diode -Turn-on loss in the commutating switch
Dimensions see outlines.pdf
A = Anode, C = Cathode, TA
B = Cathode
C
A TO-220 AC
C (TAB)
Pulse test:x Pulse Width = 5 ms, Duty Cycle < 2.0 %
y Pulse Width = 300 m s, Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified
IXYS reserves the right to change limits, test conditions and dimensions.
I FAV =10 A V RRM =600 V t rr =35 ns
V RSM V RRM
Type
V V
600
600DSEP 8-06A
Symbol Conditions
Maximum Ratings
I FRMS
35A I FAVM T C = 135°C; rectangular, d = 0.510A
I FSM T VJ = 45°C; t p = 10 ms (50 Hz), sine 50A
E AS T VJ = 25°C; non-repetitive 0.1mJ I AS = 0.9 A; L = 180 µH
I AR V A = 1.5·V R typ.; f = 10 kHz; repetitive
0.1
A T VJ -55...+175
°C T VJM 175°C T stg
-55...+150
°C P tot T C = 25°C 60W M d mounting torque 0.4...0.6
Nm Weight
typical
2
g
Symbol Conditions
Characteristic Values typ.max.
I R
x
T VJ = 25°C V R = V RRM
60
m A T VJ = 150°C V R = V RRM 0.25mA V F y I F = 10 A;
T VJ = 150°C 1.42V T VJ =25°C
2.10V R thJC 2.5
K/W R thCH 0.5
K/W t rr I F = 1 A; -di/dt = 50 A/m s;35
ns
V R = 30 V; T VJ = 25°C
I RM
V R = 100 V;I F = 12 A; -di F /dt = 100 A/m s 4.4
A
T VJ = 100°C
008
0.0
0.3
0.6
0.91.20.0
0.5 1.0 1.5
0510********I F
A V t fr
µs Fig. 3Peak reverse current I RM
versus -di F /dt
Fig. 2Reverse recovery charge Q r
versus -di F /dt
Fig. 1Forward current I F versus V F
Fig. 6Peak forward voltage V FR and t fr
versus di F /dt Fig. 7Transient thermal resistance junction to case
Constants for Z thJC calculation:i R thi (K/W)t i (s)1 1.4490.005220.55780.00033
0.4931
0.0169
914
T VJ =150°C T VJ =100°C T VJ = 25°C
NOTE: Fig. 2 to Fig. 6 shows typical values。