半导体锁模激光器的英语

半导体锁模激光器的英语
Semiconductor Mode-Locked Lasers.
Semiconductor mode-locked lasers (MLLs) are a type of laser that emits pulses of light with extremely short durations, typically in the picosecond or femtosecond range. They are based on semiconductor materials, such as gallium arsenide (GaAs) or indium phosphide (InP), and use a
variety of techniques to achieve mode-locking, which is the process of synchronizing the longitudinal modes of the
laser cavity.
Mode-locked lasers are widely used in a variety of applications, including optical communications, optical sensing, and laser processing. They are particularly useful in applications that require high peak powers and short pulse durations, such as in nonlinear optics and ultrafast spectroscopy.
There are several different techniques that can be used
to achieve mode-locking in semiconductor lasers. One common technique is to use an external cavity, which consists of a laser diode and an external resonator. The laser diode is used to generate the optical gain, while the external resonator is used to provide feedback and control the mode-locking process. Another technique is to use a saturable absorber, which is a material that absorbs light at low intensities but becomes transparent at high intensities.
The saturable absorber is placed inside the laser cavity
and acts to selectively suppress certain modes of the laser, leading to mode-locking.
The performance of semiconductor MLLs is characterized by a number of parameters, including the pulse duration,
the repetition rate, the average power, and the peak power. The pulse duration is the duration of the individual light pulses, and is typically measured in picoseconds or femtoseconds. The repetition rate is the rate at which the pulses are emitted, and is typically measured in gigahertz. The average power is the average power of the laser output, and is typically measured in milliwatts or watts. The peak power is the maximum power of the individual light pulses,
and is typically measured in kilowatts or megawatts.
Semiconductor MLLs are a rapidly developing field, and new advances are being made all the time. These lasers are becoming increasingly powerful and efficient, and are
finding new applications in a wide variety of fields.
半导体锁模激光器。

半导体锁模激光器（MLL）是一种能发出极短脉冲光束的激光器，脉冲持续时间通常为皮秒或飞秒量级。

它们基于半导体材料，如砷
化镓（GaAs）或磷化铟（InP），并采用多种技术实现锁模，锁模是
指使激光腔的纵向模态同步的过程。

锁模激光器被广泛应用于各种领域，包括光通信、光传感和激
光加工。

它们特别适用于需要高峰值功率和短脉冲持续时间的应用，例如非线性光学和超快光谱。

有几种不同的技术可以用来在半导体激光器中实现锁模。

一种
常见技术是使用外腔，它由一个激光二极管和一个外谐振器组成。

激光二极管用于产生光学增益，而外谐振器用于提供反馈并控制锁
模过程。

另一种技术是使用可饱和吸收体，它是一种在低强度时吸
收光但在高强度时变为透明的材料。

可饱和吸收体置于激光腔内，
并选择性地抑制激光器的某些模态，从而导致锁模。

半导体 MLL 的性能由许多参数表征，包括脉冲持续时间、重复率、平均功率和峰值功率。

脉冲持续时间是单个光脉冲的持续时间，通常以皮秒或飞秒为单位测量。

重复率是脉冲发射的速率，通常以
千兆赫兹为单位测量。

平均功率是激光输出的平均功率，通常以毫
瓦或瓦特为单位测量。

峰值功率是单个光脉冲的最大功率，通常以
千瓦或兆瓦为单位测量。

半导体 MLL 是一项快速发展的领域，新进展不断涌现。

这些激
光器变得越来越强大和高效，并在广泛的领域中发现了新的应用。