HGTP14N44G3VL资料

L, INDUCTANCE (mHy)
Figure 1. Self Clamped Inductive Switching Current vs Time
VCE, COLLECTOR TO EMITTER VOLTAGE (V) 1.25 ICE = 6A 1.20 1.15 1.10 VGE = 8.0V 1.05 VGE = 4.5V 1.00 0.95 0.90 -50 VGE = 5.0V VGE = 3.7V VGE = 4.0V
Figure 2. Self Clamped Inductive Switching Current vs Inductance
VCE, COLLECTOR TO EMITTER VOLTAGE (V) 1.6 ICE = 10A 1.5 VGE = 3.7V VGE = 4.0V 1.4
1.3
VGE = 4.5V VGE = 5.0V
tf
Current Turn-Off Fall Time-Inductive Load
3
-
15
µs
SCIS
Self Clamped Inductive Switching
20 15
-
-
A A
Thermal Characteristics
RθJC Thermal Resistance Junction to Case 0.70 °C/W
40 ISCIS, INDUCTIVE SWITCHING CURRENT (A) ISCIS, INDUCTIVE SWITCHING CURRENT (A) RG = 1kΩ, VGE = 5V, VDD = 14V 40 RG = 1kΩ, VGE = 5V, VDD = 14V
30
30
TJ = 25°C 20
元器件交易网
HGTP14N44G3VL / HGT1S14N44G3VLS
April 2002
HGTP14N44G3VL / HGT1S14N44G3VLS
300mJ, 440V, N-Channel Ignition IGBT
General Description
This N-Channel IGBT is a MOS gated, logic level device which is intended to be used as an ignition coil driver in automotive ignition circuits. Unique features include an active voltage clamp between the collector and the gate and ESD protection for the logic level gate. Some specifications are unique to this automotive application and are intended to assure device survival in this harsh environment.
30 ICE, COLLECTOR TO EMITTER CURRENT (A) VGE = 8.0V 25 VGE = 5.0V VGE = 4.5V 20 VGE = 4.0V VGE = 3.7V 15
15
10
10
5 TJ = - 40°C 0 0 1.0 2.0 3.0 4.0
5 TJ = 25°C 0 0 1.0 2.0 3.0 4.0 VCE, COLLECTOR TO EMITTER VOLTAGE (V)
©2002 Fairchild Semiconductor Corporation
HGTP14N44G3VL / HGT1S14N44G3VLS Rev. A, April 2002
元器件交易网
HGTP14N44G3VL / HGT1S14N44G3VLS
Typical Performance Curves (Continued)
Applications
• Automotive Ignition Coil Driver Circuits • Coil-On Plug Applications
Features
• • • • • Logic Level Gate Drive Internal Voltage Clamp ESD Gate Protection Max TJ = 175oC SCIS Energy = 300mJ at TJ = 25oC
Device Maximum Ratings TA = 25°C unless otherwise noted
Symbol BVCES ESCIS25 IC25 IC90 VGES VGEM ICO ICO PD TJ, TSTG TL Tpkg ESD Parameter Collector to Emitter Breakdown Voltage (IC = 10 mA) Drain to Source Avalanche Energy at L = 2.3mHy, TC = 25°C Collector Current Continuous, at TC = 25°C, VGE = 4.5V Collector Current Continuous, at TC = 90°C, VGE = 4.5V Gate to Emitter Voltage Continuous Gate to Emitter Voltage Pulsed L = 2.3mHy, TC = 25°C L = 2.3mHy, TC = 150°C Power Dissipation Total TC = 25°C Power Dissipation Derating TC > 25°C Operating and Storage Junction Temperature Range Max Lead Temp for Soldering (Leads at 1.6mm from Case for 10s) Max Lead Temp for Soldering (Package Body for 10s) Electrostatic Discharge Voltage at 100pF, 1500Ω Ratings 490 300 27 21 ±10 ±12 20 15 231 1.54 -40 to 175 300 260 6 Units V mJ A A V V A A W W/°C °C °C °C KV
Device Marking 14N44GV 14N44GV 14N44GV Device HGT1S14N44G3VLT HGT1S14N44G3VLS HGTP14N44G3VL Package TO-263AB TO-263AB TO-220AB Reel Size 24mm Tube Tube Tape Width 24mm N/A N/A Quantity 800 units 50 units 50 units
30 ICE, COLLECTOR TO EMITTER CURRENT (A) VGE = 8.0V 25 VGE = 5.0V VGE = 4.5V 20 VGE = 4.0V VGE = 3.7V
Figure 4. Collector to Emitter On-State Voltage vs Junction Temperature
20
TJ = 25°C TJ = 150°C
TJ = 150°C 10
10
SCIS Curves valid for Vclamp Voltages of <460V 0 0 20 40 60 80 100 120 140 160 180 200 tCLP, TIME IN CLAMP (µS)
SCIS Curves valid for Vclamp Voltages of <460V 0 0 2 4 6 8 10
©2002 Fairchild Semiconductor Corporation
HGTP14N44G3VL / HGT1S14N44G3VLS Rev. A, April 2002
元器件交易网
HGTP14N44G3VL / HGT1S14N44G3VLS
Package Marking and Ordering Information
Formerly Developmental Type 49238
Package
JEDEC TO-263AB D²-Pak JEDEC TO-220AB E
Symbol
C G
R1 GATE
COLLECTOR
G E COLLECTOR (FLANGE) COLLECTOR (FLANGE)
EMITTER
1.2 VGE = 8.0V 1.1 -50
-25
0
25
50
75
100
125
150Leabharlann 175-250
25
50
75
100
125
150
175
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Figure 3. Collector to Emitter On-State Voltage vs Junction Temperature
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off State Characteristics
BVCES BVCER BVECS BVGES ICES IGES R1 Collector to Emitter Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Collector Breakdown Voltage Gate to Emitter Breakdown Voltage Collector to Emitter Leakage Current Gate to Emitter Leakage Current Series Gate Resistance IC = 2mA, VGE = 0 IC = 10mA, RG = 1KΩ IC = 1mA IGES = ±1mA VCE = 300V, VGE = ±10V TC = 25°C TC = 150°C TC = 25°C TC = -40°C to 175°C TC = 150°C TC = 25°C 400 390 24 ±14 1000 480 470 10 250 ±5 V V V V µA µA µA Ω
Switching Characteristics
td(off) Current Turn-Off Delay Time-Inductive Load IC = 7.5A, RG = 1KΩ, L = 1.0mHy, VCL = 300V, VGE = 5V, TC = 25°C, See Fig. 12 IC = 7.5A, RG = 1KΩ, L = 1.0mHy, VCL = 300V, VGE = 5V, TC = 25°C, See Fig. 12 L = 2.3mHy, TC = 25°C VGE = 5V, See T = 150°C C Fig. 1 & 2 3 18 µs
On State Characteristics
VCE(SAT) VGE(TH) Collector to Emitter Saturation Voltage Gate to Emitter Threshold Voltage IC = 8A, VGE = 4.5V IC = 1mA, VCE = VGE TC = 25°C TC = 150°C TC = -40°C TC = 150°C 0.6 1.3 1.4 1.9 2.2 2.5 V V V V