电力电子与高频磁技术

2004
2005
2006
2007
2008
隔离型D2D变换器性能指标的发展
(A) 1990 1992
FB HB QB EB SB 40 20 60 30
1994
60 30
1996 1998 2000 2002 2004
80 40 100 60 20 100 70 40 15 135 80 60 30 135 100 100 50 30
6Ux2U 3Ux2U 3Ux2U 2Ux2U 3Ux1U
效率
93% 92% 91% Market is looking for 24W/in3 20W/in3 15W/in3 10W/in3
Efficiency (Estimate Average)
功率密度
30W/in3 25W/in3 Power Density (Estimate Average)
wenku.baidu.com
25
50
75
100
负载（%）
影响效率的因素
Effi.
Load
需求对开关电源技术的推动
高功率密度 高工作效率 高可靠性 低环境污染 低成本 1. 开关工作高频化 2. 高密度封装技术 3. 全负载优化设计 4. 集成电路(IC)化 5. 电路拓扑与架构 6. 数字控制技术 7. 电源系统优化
三“高”两“低”
如: 高频损耗测量的问题
ΔP ΔU ΔI = + + tg (θ ) ⋅ f ⋅ Δ t P U I
200 200 160 tan⎜ θ ⋅
如: 磁件近场耦合问题
⎛ ⎝
⎞ ⎟ 180 ⎠
π 0
120 80 40 0 80 81 82 83 84 85 86 87 88 89 90
阻抗角θ
磁性元件的平面化技术
认识功率变换器中的磁性元件
PFC choke
EMI filter
Spike killer
TX CMC DMC PFC
L
D2A
SR
L
磁性元件的重要性和所面临的挑战
INPUT OUTPUT
Power converter Magnetics are critical for: Magnetics are critical for: Size and weight Size and weight Form factor Form factor Power loss Power loss Manufacture cost Manufacture cost Temperature rise Temperature rise Performance Performance EMI, RFI, Cross-regulation, EMI, RFI, Cross-regulation, Acoustic noise, Control, etc Acoustic noise, Control, etc
Based on transfer energy
Core size For Inductor
AP = Ae ⋅ Aw
For Transformer
ΔI ⎞ ⎛ L⎜ I dc + ⎟ 2 ⎠ NI rms = ⎝ ⋅ NBmax JKu
K ⎞ 2⎛ 2 LI rms ⎜ 1 + rp ⎟ ⎜ 2 ⎟ ⎝ ⎠ = Bmax J ⋅ K u
高频磁性元件/磁技术已经成为功率变换器进一步发展的瓶颈 磁技术的应用/专利/设计已经成为当前开关电源主要竞争内容
二、高频磁技术的发展趋势
高频化 平面化 阵列化 模块化 磁磁(M-M)集成化 磁电(M-C)集成化 磁硅(M-S)合成化
开关电源高频磁技术的发展
High freq. High freq.
2006
800 400 240 150 75
绿色电源要求
(IEEE519－1992) i(t)
谐波电流要求 电磁兼容要求 环境保护要求
环保节能
空载损耗要求 负载效率要求
效率 80%
Rated Power 0 to <10W >10W to <250W No-Load Power consumption Tier 1 Jan. 05 0.5W 0.75W Tier 2 Jul 06 0.3W 0.5W
低速度
变压器是传递 磁能的元件
小车,小载重
高速度
体积小/速度快
小车, 大载重
低速度
体积小/载重大
磁性元件的高频化技术
更大的磁心损耗 (激励波形, 偏磁) 急剧增大的线圈损耗 (高频涡流) 杂散参数的影响增大 (漏感, 杂散电容) 磁件的模型更加复杂 (电气/损耗/EMI模型) 电磁干扰的问题严重 (传导, 耦合, 辐射) 磁件的设计技术更重要 (优化设计, 电磁场分析) 磁性元件测量技术 (高频, 大信号, 低损耗) 磁件与电路系统结合更密切 (仿真模型, 系统考虑)
Low profile for integration with other elements Large surface area for better heat dissipation Short thermal path for lower temperature rise High conductor-filling factor for compact size Precise winding parameters for better consistency Pre-tooled winding structure for better productivity
ip
Nsa Np Nsb
isa isaDC isb isbAC
isaAC
3KW, 24V/125A Np:Nsa:Nsb=23:2:2
isbDC
t
P/2 Sa Sb P/2
Secondary Winding Loss ER59/3C96
Secondary current harmonics: DC: 0.5 1st: 0.6169, 3rd: 0.1550 5th: 0.0401, 7th: 0.0173
传统铁芯尺寸设计AP法的问题
AP=Aw .Ae
AP = Ae ⋅ Aw = = = VΔt N p I prms + N s I srms ⋅ 2 Bac N JK u V pk D 2 Bac fN p ⋅ N p I prms JK u + Vspk ( 1 − D ) N s I srms ⋅ 2 Bac fN s JK u
2006
150 120 100 60 40
(W) 1990 1992
FB HB QB EB SB 200 100 300 150
1994
300 150
1996 1998 2000 2002 2004
330 200 400 200 100 500 200 150 50 700 250 150 100 700 350 200 120 66
0 . 10 5 1 . 10 4 1.5 . 10 4 2 . 10 4 2.5 . 10 4 3 . 10 4 3.5 . 10 4 4 . 10 4 4.5 . 10 4
改进设计: 0.25mm* 38mm 铜箔 原来设计: 0.5mm* 38mm 铜箔
传统绕组导体设计的问题
频率 f 电流 I
线经 φ 导体面积 Aw
股数 n
局限: Winding loss by proximate effect not considered Winding loss by parallel effect not considered
线圈设计技术(全桥移相变压器为例)
V pk DI prms + Vspk ( 1 − D )I srms 2 f ⋅ Bac J ⋅ K u
局限: B and J are very difficult to determine, especial J Pc and Pw are not precisely considered, especial Pw
磁性元件的阵列化技术
Vicor V-I Chip: P density:1000W/in3 Efficiency: 97% Isolated 48V to 48V Power: 300 watt
Module size: 32x21x4 mm
磁电(M-C)集成化组件技术
以磁件工艺为主集成电容 以电容工艺为主集成磁件
Nominal 48V BUS Isolated DC/DC Converter Dual O/P QB Isolated DC/DC Converter Triple O/P HB
POL
1.0V
2.5V 1.8V
Energy Reservation System
3.3V +15V -15V
A2D(前端PFC)电源性能指标的发展
主要內容
一、高频磁技术研究的意义 二、高频磁技术的发展趋势 三、高频磁技术的应用举例
分布式电源架构 (DPA)
AC Mains AC/DC Rectifier 48 VDC Isolated DC/DC Converter Single O/P HB;QB;EB POL 1.2V POL 5.0V 1.5V
Top NiFe - 4um Insulator Copper windings - 43um Bottom NiFe - 4um Silicon
iCouple
三、高频磁技术的应用(部分内容)
高频磁性元件线圈设计技术 平面变压器绕组设计技术 滤波器杂散参数控制技术 磁性元件对传导EMI的影响 高频磁件近场耦合控制技术
D2D application
A2D application
磁性元件的集成化技术
Vi Vo
0 2 0 3 0 0 4 1
IM with current doubler
Multi-channel VRM
L1 Tr Np Ns D1 D2 L2 Vo
DM CM
IM inductor of CDR
IM is good at size and performance, but difficult in design and manufacture
f=85kHz
Optimized: P: φ0.1mm*100//2 S: 38*0.25mm Ptotal: 24W ΔT: 63oC Previous: P: φ0.12mm*180 S: 38*0.5mm Ptotal: 36W ΔT: 75oC
Winding loss
最小损耗
总损耗 AC Loss DC Loss
Planar Planar
Matrix Matrix
Module Module
Integrated Integrated
Micro-fabricated Micro-fabricated
Hybrid Hybrid
高频化技术是降低体积的重要手段
TX CMC DMC PFC L
D2A
SR
L
大车,大载重
电力电子与高频磁技术
陈 为 博士 chw@fzu.edu.cn
福州大学电气工程与自动化学院 教授，博士生导师 中国电源学会 理事 中国电源学会变压器/电感器专委会 主任委员
About the Lecturer
He received Ph.D. degree from Fuzhou University in 1990. He is a professor and Ph.D advisor in E.E. Department of Fuzhou University, Fuzhou, China He worked in CPES, Virginia, USA as visiting professor for two years from Dec. 1996 to Nov. 1998 Dr. CHEN Wei ( 陈 为) His research interests include in Power conversion, Power electronics magnetics, EMI, Electromagnetic field analysis, etc.
A B
C A D D A D
A
C D
磁硅(M-S)合成化/微制造磁性元件技术
Enpirion POL Converter:
10W maximum output power Built in choke 5MHz operating frequency Up to 90% efficient Superior noise immunity of controller and power circuits