高压二极管HighVoltageRectifier

常用高压二极管简介及型号

二极管知识简介一、二极管的工作原理晶体二极管为一个由p型半导体和n型半导体形成的p-n结，在其界面处两侧形成空间电荷层，并建有自建电场。

当不存在外加电压时，由于p-n 结两边载流子浓度差引起的扩散电流和自建电场引起的漂移电流相等而处于电平衡状态。

当外界有正向电压偏置时，外界电场和自建电场的互相抑消作用使载流子的扩散电流增加引起了正向电流。

当外界有反向电压偏置时，外界电场和自建电场进一步加强，形成在一定反向电压范围内与反向偏置电压值无关的反向饱和电流I0。

当外加的反向电压高到一定程度时，p-n结空间电荷层中的电场强度达到临界值产生载流子的倍增过程，产生大量电子空穴对，产生了数值很大的反向击穿电流，称为二极管的击穿现象。

二、二极管的类型二极管种类有很多，按照所用的半导体材料，可分为锗二极管（Ge管）和硅二极管（Si管）。

根据其不同用途，可分为检波二极管、整流二极管、稳压二极管、开关二极管等。

按照管芯结构，又可分为点接触型二极管、面接触型二极管及平面型二极管。

点接触型二极管是用一根很细的金属丝压在光洁的半导体晶片表面，通以脉冲电流，使触丝一端与晶片牢固地烧结在一起，形成一个“PN结”。

由于是点接触，只允许通过较小的电流（不超过几十毫安），适用于高频小电流电路，如收音机的检波等。

面接触型二极管的“PN结”面积较大，允许通过较大的电流（几安到几十安），主要用于把交流电变换成直流电的“整流”电路中。

平面型二极管是一种特制的硅二极管，它不仅能通过较大的电流，而且性能稳定可靠，多用于开关、脉冲及高频电路中。

三、二极管的导电特性二极管最重要的特性就是单方向导电性。

在电路中，电流只能从二极管的正极流入，负极流出。

下面通过简单的实验说明二极管的正向特性和反向特性。

1.正向特性在电子电路中，将二极管的正极接在高电位端，负极接在低电位端，二极管就会导通，这种连接方式，称为正向偏置。

必须说明，当加在二极管两端的正向电压很小时，二极管仍然不能导通，流过二极管的正向电流十分微弱。

肖特基二极管讲解

肖特基二极管简介肖特基二极管（SBD）是肖特基势垒二极管（SchottkyBarrierDiode，缩写成SBD）的简称，是以其发明人肖特基博士（Schottky）命名的半导体器件。

肖特基二极管是低功耗、大电流、超高速半导体器件，它不是利用P型半导体与N型半导体接触形成PN结原理制作的，而是利用金属与半导体接触形成的金属－半导体结原理制作的。

因此，SBD也称为金属－半导体（接触）二极管或表面势垒二极管，它是一种热载流子二极管。

Schottky diode (SBD) is the Schottky barrier diode , is the inventor of the Schottky named semiconductor device. Schottky barrier diode is a low power, high current, super high speed semiconductor devices, instead of using P type semiconductor and the n-type semiconductor contact formation PN junction theory to make, but the use of metal semiconductor contact formation of metal semiconductor junction with the principle of making the. Therefore, SBD is also known as a metal semiconductor (contact) diode or a surface barrier diode, which is a hot carrier diode.肖特基二极管是半导体器件，以其发明人博士（1886年7月23日—1976年3月4日）命名的，SBD是肖特基势垒二极管（SchottkyBarrierDiode，缩写成SBD）的简称。

ru3yx二极管参数代换

ru3yx二极管参数代换英文回答：The ru3yx diode is a high-voltage, high-currentrectifier diode that is commonly used in power supplies and other electronic circuits. It has a reverse voltage rating of 300V and a forward current rating of 1A. The diode is also characterized by its low forward voltage drop of 0.7V and its fast switching speed.The ru3yx diode is a suitable replacement for a variety of other rectifier diodes, including the 1N4007, 1N5408, and UF4007 diodes. These diodes have similar voltage and current ratings to the ru3yx diode, and they also have low forward voltage drops and fast switching speeds.When replacing a ru3yx diode with another diode, it is important to consider the following factors:The reverse voltage rating of the replacement diodemust be equal to or greater than the reverse voltage rating of the ru3yx diode.The forward current rating of the replacement diode must be equal to or greater than the forward current rating of the ru3yx diode.The forward voltage drop of the replacement diode should be as close as possible to the forward voltage drop of the ru3yx diode.The switching speed of the replacement diode should be as fast as or faster than the switching speed of the ru3yx diode.By considering these factors, you can ensure that the replacement diode will function properly in place of theru3yx diode.中文回答：ru3yx二极管是一款高压大电流整流二极管，常用于电源及其他电子电路中。

二极管参数-HY+ELECTRONIC+CORP

●Guard ●Low
power loss,high efficiency current capability,low VF surge capacity package has UL flammability classification
●High ●High
1.0(25.4) MIN.
.052(1.3) DIA .048(1.2)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25℃ ambient temperature unless otherwise specified. Single phase, half wave ,60Hz, resistive or inductive load. For capacitive load, derate current by 20%
10SQ030 thru 10SQ100
SCHOTTKY BARRIER RECTIFIERS REVERSE VOLTAGE -30 to 100Volts FORWARD CURRENT -10.0 Amperes R-6
FEATURES
●Metal
of silicon rectifier , majority carrier conduction ring for transient protection
1000
TJ=25℃ ，f=1MHZ 100 0.1 1 4 10 100
REVERSE VOLTAGE VOLTS
UNIT V V V A
IFSM VF IR 0.55

西门子肖特基二极管 MBR1100-D 使用手册说明书

MBR1100Axial Lead RectifierThese rectifiers employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free wheeling diodes, and polarity protection diodes.Features•Low Reverse Current•Low Stored Charge, Majority Carrier Conduction•Low Power Loss/High Efficiency•Highly Stable Oxide Passivated Junction•Guard−Ring for Stress Protection•Low Forward V oltage•175°C Operating Junction Temperature•High Surge Capacity•These Devices are Pb−Free and are RoHS CompliantMechanical Characteristics:•Case: Epoxy, Molded•Weight: 0.4 Gram (Approximately)•Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable•Lead Temperature for Soldering Purposes:260°C Max. for 10 Seconds•Polarity: Cathode Indicated by Polarity BandMAXIMUM RATINGSRating Symbol Value UnitPeak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage V RRMV RWMV R100VAverage Rectified Forward Current (V R(equiv)≤0.2 V R(dc), R q JA = 50°C/W,P.C. Board Mounting, [see Note 3], T A = 120°C)I O 1.0APeak Repetitive Forward Current(V R(equiv)≤ 0.2 V R(dc), R q JA = 50°C/W,P.C. Board Mounting, [see Note 3], T A = 110°C)I FRM2.0ANon−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)I FSM50AOperating and Storage Junction Temperature Range (Note 1)T J, T stg−65 to+175°CVoltage Rate of Change (Rated V R)dv/dt10V/ns Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.1.The heat generated must be less than the thermal conductivity fromJunction−to−Ambient: dP D/dT J < 1/R q JA.Device Package Shipping†ORDERING INFORMATIONSCHOTTKYBARRIER RECTIFIER1.0 AMPERE, 100 VOLTSMBR1100G Axial Lead(Pb−Free)1000 Units/Bag†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.MBR1100RLG Axial Lead(Pb−Free)5000/T ape & ReelMARKING DIAGRAMA= Assembly LocationY= YearWW= Work WeekG= Pb−Free Package(Note: Microdot may be in either location)THERMAL CHARACTERISTICS (See Note 4)CharacteristicSymbol Max Unit Thermal Resistance, Junction−to−AmbientR q JASee Note 3°C/WELECTRICAL CHARACTERISTICS (T L = 25°C unless otherwise noted)CharacteristicSymbol MaxUnit Maximum Instantaneous Forward Voltage (Note 2)(i F = 1 A, T L = 25°C)(i F = 1 A, T L = 100°C)V F0.790.69VMaximum Instantaneous Reverse Current @ Rated dc Voltage (Note 2)(T L = 25°C)(T L = 100°C)i R0.55.0mA2.Pulse Test: Pulse Width = 300 m s, Duty Cycle ≤2.0%.Figure 1. Typical Forward Voltage Figure 2. Typical Reverse Current {Figure 3. Current Derating (Mounting Method 3 per Note 3)Figure 4. Power Dissipation0.60.90v F , INSTANTANEOUS VOLTAGE (VOLTS)20102.05.01.0V R , REVERSE VOLTAGE (VOLTS)609000.20.040.020.011201600T A , AMBIENT TEMPERATURE (°C)4.03.02.01.0I F(AV), AVERAGE FORWARD CURRENT (AMPS)1.004.03.02.01.02.0140i F , I N S T A N T A N E O U S F O R W A R D C U R R E N T (A M P S )I I P F (A V ), A V E R A G E P O W E R D I S S I P A T I O N (W A T T S )0.50.20.10.30.10.20.40.50.70.8708010203040500.10.41.020********* 3.0 4.0 5.00.050.021.1 1.41.0 1.2 1.3100, R E V E R S E C U R R E N T ( A )R m 4.02.01020100402001 K400200180, A V E R A G E F O R W A R D C UR R E N T (A M P S )F (A V){ The curves shown are typical for the highest voltage device in the voltage grouping. Typical reverse current for lower voltage selections can be estimated from these same curves if V R is sufficiently below rated V R .Figure 5. Typical Capacitance2040V R , REVERSE VOLTAGE (VOLTS)150504*********C , C A P A C I T A N C E (p F )50100601001070809070609080NOTE 3 — MOUNTING DATA:Data shown for thermal resistance junction−to−ambient (R q JA) for the mounting shown is to be used as a typical guideline values for preliminary engineering or in case the tie point temperature cannot be measured.Typical Values for R q JA in Still AirMounting MethodLead Length, L (in)R q JA 1/81/41/23/4152657285°C/W 2678087100°C/W 3—50°C/WMounting Method 1P .C. Board with 1−1/2″ x 1−1/2″copper surface.Mounting Method 3P .C. Board with1−1/2″ x 1−1/2″copper surface.PLANEMounting Method 2″NOTE 4 — THERMAL CIRCUIT MODEL:(For heat conduction through the leads)Use of the above model permits junction to lead thermal resistance for any mounting configuration to be found. For a given total lead length, lowest values occur when one side of the rectifier is brought as close as possible to the heat sink.Terms in the model signify:T A = Ambient Temperature T C = Case Temperature T L = Lead Temperature T J = Junction Temperature R q S = Thermal Resistance, Heat Sink to Ambient R q L = Thermal Resistance, Lead to Heat Sink R q J = Thermal Resistance, Junction to Case P D = Power Dissipation(Subscripts A and K refer to anode and cathode sides,respectively.) V alues for thermal resistance components are:R q L = 100°C/W/in typically and 120°C/W/in maximum.R q J = 36°C/W typically and 46°C/W maximum.NOTE 5 — HIGH FREQUENCY OPERATION:Since current flow in a Schottky rectifier is the result of majority carrier conduction, it is not subject to junction diode forward and reverse recovery transients due to minority carrier injection and stored charge. Satisfactory circuit analysis work may be performed by using a model consisting of an ideal diode in parallel with a variable capacitance. (See Figure 5)Rectification efficiency measurements show that operation will be satisfactory up to several megahertz. For example, relative waveform rectification efficiency is approximately 70 percent at 2 MHz, e.g., the ratio of dc power to RMS power in the load is 0.28 at this frequency,whereas perfect rectification would yield 0.406 for sine wave inputs. However, in contrast to ordinary junction diodes, the loss in waveform efficiency is not indicative of power loss: it is simply a result of reverse current flow through the diode capacitance, which lowers the dc output voltage.SCALE 1:1BDIM MIN MAX MIN MAX MILLIMETERSINCHES A 4.10 5.200.1610.205B 2.00 2.700.0790.106D 0.710.860.0280.034F −−− 1.27−−−0.050K25.40−−−1.000−−−NOTES:1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.2.CONTROLLING DIMENSION: INCH.3.ALL RULES AND NOTES ASSOCIATED WITH JEDEC DO −41 OUTLINE SHALL APPLY4.POLARITY DENOTED BY CATHODE BAND.5.LEAD DIAMETER NOT CONTROLLED WITHIN F DIMENSION.AXIAL LEAD CASE 59−10ISSUE UDATE 15 FEB 2005GENERICMARKING DIAGRAM*xxx = Specific Device Code A = Assembly Location YY = YearWW= Work WeekSTYLE 1:PIN 1.CATHODE (POLARITY BAND)2.ANODESTYLE 2:NO POLARITYSTYLE 1STYLE 2*This information is generic. Please refer to device data sheet for actual part marking.Pb −Free indicator, “G” or microdot “ G ”,may or may not be present.MECHANICAL CASE OUTLINEPACKAGE DIMENSIONSON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor thePUBLICATION ORDERING INFORMATIONTECHNICAL SUPPORTNorth American Technical Support:Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 011 421 33 790 2910LITERATURE FULFILLMENT :Email Requests to:*******************onsemi Website: Europe, Middle East and Africa Technical Support:Phone: 00421 33 790 2910For additional information, please contact your local Sales Representative。

高效整流二极管HER302

D S 25003 Rev. D-3 1 of 2 HER301-HER305FeaturesMechanical Data·Case: Molded Plastic·Terminals: Plated Axial Leads, Solderable per MIL-STD-202, Method 208·Polarity: Color Band Denotes Cathode ·Approx. Weight: 1.2 gramsRatings at 25° C ambient temperature unless otherwise specified.Single phase, half wave, 60Hz, resistive or inductive load.Maximum Ratings and Electrical CharacteristicsCharacteristicSymbol HER301HER302HER303HER304HER305Unit Maximum Recurrent Peak Reverse Voltage V RRM 50100200300400V Maximum RMS Voltage V RMS 3570140210280V Maximum DC Blocking voltageV DC50100200300400V Maximum Average Forward Rectified Current 9.5mm Lead Length @ T A =50°C I(AV)3.0A Peak Forward Surge Current 8.3 ms single half sine-wavesuperimposed on rated load(JEDEC method)I FM 125A Maximum Instantaneous Forward Voltage at 3.0 A DC V F 1.1V Maximum DC Reverse Current at Rated DC Blocking Voltage @ TA=25°C I R 10µA Maximum Full Load Reverse Current Full Cycle Average 9.5mm Lead Length @ T C =55°C I R 150µA Maximum Reverse Recovery Time (Note 1)T RR 50nS Typical Junction Capacitance (Note 2)C J 70pF Operating and Storage Temperature RangeT J ,T STG-65 to +150°CNotes:1. Reverse Recovery Test Conditions: I F =0.5 A, I R =1.0 A,I RR =0.25A2. Measured at 1MHz and applied reverse voltage of 4.0 volts.·Low Power Loss, High Efficiency ·Low Leakage·Low Forward Voltage Drop ·High Current Capability ·High Speed Switching·High Surge Current Rating ·High Reliability·Plastic Material - UL Flammability Classification 94V-0AAB CDHER301 - HER3053.0A HIGH EFFICIENCY RECTIFIERDO-201ADDim Min Max A 25.4—B —9.5C 1.2 1.3D4.85.2All Dimensions in mmD S 25003 Rev. D-3 2 of 2 HER301-HER3051001751101001000NUMBER OF CYCLES A T 60HzFig.4,Max.Non-Repetitive Peak ForwardSurge Current00255075100125150175T ,AMBIENT TEMPERATURE (°C)Fig.1,Typical Forward Current Derating Curve A Single Phase Half Wave 60Hz Resistive or Inductive Load0.51.01.52.02.53.002550751001251501750.11.0101001000V ,REVERSE VOLTAGE (VOLTS)Fig.5,Typical JunctionCapacitanceR 0.010.11.01010000.20.40.60.8 1.0 1.2 1.4V ,INSTANTANEOUS FWD VOLTAGE (V)Fig.3,Typ.Instantaneous Forward CharacteristicsF T =25°CJ 0.010.11.0101001000020406080100120140PERCENT OF RATED PEAK REVERSE VOLTAGEFig.2,Typical Reverse CharacteristicsT =150°CJ T =100°CJ T =25°CJ。

R5000, 高压二极管中文资料

IFSM
30
A
VFM IRM Cj RqJA Tj, TSTG
5.0 5.0 15 50 -65 to +125
V mA pF K/W °C
Notes:
1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case. 2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current (Note 1) @ TL = 55
D
DO-15 Dim A B C D Min 25.40 5.50 0.686 2.60 All Dimensions in mm Max — 7.62 0.889 3.60
A
B
A
Mechanical Data
! ! ! ! ! ! !
C
Case: DO-15,Molded Plastic Terminals: Plated Leads Solderable per MIL-STD-202, Method 208 Polarity: Cathode Band Weight: 0.40 grams (approx.) Mounting Position: Any Marking: Type Number

肖特基二极管

肖特基二极管简介肖特基二极管（SBD）是肖特基势垒二极管（SchottkyBarrierDiode，缩写成SBD）的简称，是以其发明人肖特基博士（Schottky）命名的半导体器件。

肖特基二极管是低功耗、大电流、超高速半导体器件，它不是利用P型半导体与N型半导体接触形成PN结原理制作的，而是利用金属与半导体接触形成的金属－半导体结原理制作的。

因此，SBD也称为金属－半导体（接触）二极管或表面势垒二极管，它是一种热载流子二极管。

Schottky diode (SBD) is the Schottky barrier diode , is the inventor of the Schottky named semiconductor device. Schottky barrier diode is a low power, high current, super high speed semiconductor devices, instead of using P type semiconductor and the n-type semiconductor contact formation PN junction theory to make, but the use of metal semiconductor contact formation of metal semiconductor junction with the principle of making the. Therefore, SBD is also known as a metal semiconductor (contact) diode or a surface barrier diode, which is a hot carrier diode.肖特基二极管是半导体器件，以其发明人博士（1886年7月23日—1976年3月4日）命名的，SBD是肖特基势垒二极管（SchottkyBarrierDiode，缩写成SBD）的简称。

电子类专业英语电子教案第二课

variable output voltage when using external biasing.
翻译：线性稳压器常用于电压的提升（输出供电电压大于输入源电压）和降低（输出供电电压低于输入源电压）。使用外部偏置，线性稳压器也可产生恒定输出电压或可变输出电压。
• The basic block of a linear power supply is shown in Figure 2-1, which includes: Transformer, which steps down high voltage AC mains to low voltage AC; Rectifier, which converts AC to DC, but the DC output is varying; Filtering, which filters the DC from varying greatly to a small ripple; Regulator, which eliminates ripple by setting DC output to a fixed voltage.
• The advantage of linear regulators is simple implementation and minimal parts (just the IC in the case of fixed output) and low output ripple. The major disadvantage of linear regulators is low efficiency.
翻译：线性电源可以分解为一系列基本模块，如图2-1所示，该图包括：变压器——把电网高压交流电转换为低压交流电；整流器——把交流电转换为直流电，但是直流输出是变化的；滤波器——从直流电流中滤掉变化较大的成分使之仅有小的纹波成分；稳压器——消除纹波，输出固定值的直流电压。

肖特基二极管讲解

肖特基二极管简介肖特基二极管（SBD）是肖特基势垒二极管（SchottkyBarrierDiode，缩写成SBD）的简称，是以其发明人肖特基博士（Schottky）命名的半导体器件。

肖特基二极管是低功耗、大电流、超高速半导体器件，它不是利用P型半导体与N型半导体接触形成PN结原理制作的，而是利用金属与半导体接触形成的金属－半导体结原理制作的。

因此，SBD也称为金属－半导体（接触）二极管或表面势垒二极管，它是一种热载流子二极管。

Schottky diode (SBD) is the Schottky barrier diode , is the inventor of the Schottky named semiconductor device. Schottky barrier diode is a low power, high current, super high speed semiconductor devices, instead of using P type semiconductor and the n-type semiconductor contact formation PN junction theory to make, but the use of metal semiconductor contact formation of metal semiconductor junction with the principle of making the. Therefore, SBD is also known as a metal semiconductor (contact) diode or a surface barrier diode, which is a hot carrier diode.肖特基二极管是半导体器件，以其发明人博士（1886年7月23日—1976年3月4日）命名的，SBD是肖特基势垒二极管（SchottkyBarrierDiode，缩写成SBD）的简称。

R2000,高压二极管中文资料

R2000 CURRENT: 0.2 - 0.5AVOLTAGE RANGE: 1500 - 3000VCase: DO-41,Molded PlasticR1500 - R3000HIGH VOLTAGE RECTIFIER DIODESFeaturesMaximum Ratings and Electrical Characteristics@ T A = 25°C unless otherwise specifiedMechanical DataTerminals: Plated Leads Solderable per MIL-STD-202, Method 208Polarity: Cathode BandWeight: 0.35 grams (approx.)Mounting Position: Any Marking: Type NumberSingle phase, half wave, 60Hz, resistive or inductive load.For capacitive load, derate current by 20%.Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage V RRM V RWM V R 150020003000V RMS Reverse VoltageV R(RMS)105014002100V Average Rectified Output Current (Note 1)@ T L = 55°CI O500200mANon-Repetitive Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method)I FSM 3025AForward Voltage@ I F = 500mA @ I F = 200mAV FM 2.0——3.0V Peak Reverse Leakage Current at Rated DC Blocking Voltage I RM 5.0m ATypical Junction Capacitance (Note 2)C j 8.07.0pF Typical Thermal Resistance Junction to Ambient R q JA 70117K/W Operating and Storage Temperature RangeT j,T STG-65 to +125°CNotes:1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case.2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.High current capab ility Low leakage current High surge capab ilityLow costHigh voltage !!!!!CharacteristicSymbolUnit!!!!!!!R1500R3000020*********120020406080100120140160I ,P E R C E N T O F R A T E D A V E R A G E C U R R E N T (%)O T ,AMBIENT TEMPERATURE (ºC)Fig.1Current Derating for Various Lead Lengths AI ,I N S T A N T A N E O U S F O R W A R D C UR R E N T (A )F V ,INSTANTANEOUS FWD VOLTAGE (V)Fig.2Typical Forward CharacteristicsF 0.0010.010.11.00.61.01.41.82.00612182430110100I ,P E A K F W D S U R G E C U R R E N T (A)F S M NUMBER OF CYCLES AT 60HzFig.3Peak Fwd Surge Current vs #of Cycles @60Hz1.0101001.0101001000C ,J U N C TI ON C A P A C I T A N C E (p F )j V ,REVERSE VOLTAGE (V)Fig.4Typical Junction CapacitanceR。

R5000, 高压二极管中文资料

Symbol VRRM VRWM VR VR(RMS) IO
R4000
4000
R5000
5000
Unit
V
2800 200
3500
V mA
Non-Repetitive Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) Forward Voltage Peak Reverse Leakage Current at Rated DC Blocking Voltage Typical Junction Capacitance (Note 2) Typical Thermal Resistance Junction to Ambient Operating and Storage Temperature Range @ IF = 200mA
IFSM
30
A
VFM IRM Cj RqJA Tj, TSTG
5.0 5.0 15 50 -65 to +125
V mA pF K/W °C
Notes:
1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case. 2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
R4000 - R5000
HIGH VOLTAGE RECTIFIER DIODES
VOLTAGE RANGE: 4000 - 5000V CURRENT: 200m A

电工英语单词

电工英语单词(1) 元件设备三绕组变压器:three-column transformer ThrClnTrans双绕组变压器:double-column transformer DblClmnTrans电容器:Capacitor 并联电容器:shunt capacitor 电抗器:Reactor 母线:Busbar输电线:TransmissionLine 发电厂:power plant 断路器:Breaker 刀闸(隔离开关):Isolator 分接头:tap 电动机:motor(2) 状态参数有功:active power 无功:reactive power 电流:current 容量:capacity 电压:voltage 档位:tap position 有功损耗:reactive loss 无功损耗:active loss 功率因数:power-factor 功率:power功角:power-angle 电压等级:voltage grade 空载损耗:no-load loss 铁损:iron loss铜损:copper loss 空载电流:no-load current阻抗:impedance正序阻抗:positive sequence impedance 负序阻抗:negative sequence impedance 零序阻抗:zero sequence impedance 电阻:resistor 电抗:reactance 电导:conductance 电纳:susceptance无功负载:reactive load 或者QLoad有功负载: active load PLoad遥测:YC(telemetering)遥信:YX励磁电流(转子电流):magnetizing current 定子:stator功角:power-angle上限:upper limit 下限:lower limit并列的:apposable 高压: high voltage 低压:low voltage 中压:middle voltage 电力系统 power system 发电机 generator 励磁 excitation 励磁器excitor 电压 voltage 电流 current 母线 bus 变压器 transformer 升压变压器 step-up transformer高压侧 high side 输电系统 power transmission system输电线 transmission line固定串联电容补偿fixed series capacitor compensation 稳定 stability 电压稳定 voltage stability功角稳定 angle stability 暂态稳定 transient stability 电厂 power plant 能量输送 power transfer交流 AC 装机容量 installed capacity电网 power system 落点 drop point开关站 switch station 双回同杆并架 double-circuit lines on the same tower变电站 transformer substation 补偿度 degree of compensation 高抗high voltage shunt reactor 无功补偿 reactive power compensation 故障fault 调节 regulation 裕度 magin 三相故障 three phase fault 故障切除时间fault clearing time极限切除时间 critical clearing time切机 generator triping 高顶值 high limited value 强行励磁 reinforced excitation 线路补偿器 LDC(line drop compensation) 机端 generator terminal静态 static (state) 动态 dynamic (state)单机无穷大系统 one machine - infinity bus system 机端电压控制 AVR 电抗 reactance 电阻 resistance 功角 power angle有功(功率) active power 无功(功率) reactive power 功率因数 power factor 无功电流 reactive current 下降特性 droop characteristics 斜率 slope 额定 rating 变比 ratio参考值 reference value 电压互感器 PT分接头 tap 下降率 droop rate仿真分析 simulation analysis 传递函数 transfer function 框图 block diagram 受端 receive-side 裕度 margin同步 synchronization 失去同步 loss of synchronization 阻尼 damping 摇摆 swing保护断路器 circuit breaker电阻:resistance 电抗:reactance 阻抗:impedance电导:conductance 电纳:susceptance导纳:admittance 电感:inductance电容: capacitancemagnetizing reacance 磁化电抗line-to-neutral 线与中性点间的 staor winding 定子绕组 leakage reactance 漏磁电抗no-load 空载 full load 满载 Polyphase 多相(的) iron-loss 铁损complex impedance 复数阻抗 rotor resistance 转子电阻 leakage flux 漏磁通 locked-rotor 锁定转子 chopper circuit 斩波电路 separately excited 他励的 compounded 复励 dc motor 直流电动机 de machine 直流电机 speed regulation 速度调节 shunt 并励 series 串励 armature circuit 电枢电路optical fiber 光纤 interoffice 局间的 waveguide 波导波导管 bandwidth 带宽 light emitting diode 发光二极管 silica 硅石二氧化硅 regeneration 再生, 后反馈放大 coaxial 共轴的,同轴的high-performance 高性能的 carrier 载波 mature 成熟的 Single Side Band(SSB) 单边带 coupling capacitor 结合电容 propagate 传导传播modulator 调制器 demodulator 解调器 line trap 限波器 shunt 分路器Amplitude Modulation(AM)调幅Frequency Shift Keying(FSK)移频键控tuner 调谐器 attenuate 衰减 incident 入射的 two-way configuration 二线制 generator voltage 发电机电压 dc generator 直流发电机 polyphase rectifier 多相整流器boost 增压 time constant 时间常数 forward transfer function 正向传递函数 error signal 误差信号 regulator 调节器 stabilizing transformer 稳定变压器 time delay 延时direct axis transient time constant 直轴瞬变时间常数transient response 瞬态响应 solid state 固体 buck 补偿 operational calculus 算符演算 gain 增益 pole 极点 feedback signal 反馈信号 dynamic response 动态响应 voltage control system 电压控制系统 mismatch 失配error detector 误差检测器 excitation system 励磁系统 field current励磁电流 transistor 晶体管 high-gain 高增益 boost-buck 升压去磁 feedback system 反馈系统reactive power 无功功率 feedback loop 反馈回路 automatic Voltage regulator(AVR)自动电压调整器reference Voltage 基准电压 magnetic amplifier 磁放大器amplidyne 微场扩流发电机self-exciting 自励的 limiter 限幅器manual control 手动控制block diagram 方框图 linear zone 线性区 potential transformer 电压互感器 stabilization network 稳定网络 stabilizer 稳定器 air-gap flux 气隙磁通 saturation effect 饱和效应 saturation curve 饱和曲线 flux linkage 磁链 per unit value 标么值 shunt field 并励磁场 magnetic circuit 磁路load-saturation curve 负载饱和曲线air-gap line 气隙磁化线 polyphase rectifier 多相整流器 induction machine 感应式电机 horseshoe magnet 马蹄形磁铁 magnetic field 磁场 eddy current 涡流 right-hand rule 右手定则 left-hand rule 左手定则 slip 转差率 induction motor 感应电动机 rotating magnetic field 旋转磁场 winding 绕组 stator 定子 rotor 转子 induced current 感生电流 time-phase 时间相位exciting voltage 励磁电压 solt 槽 lamination 叠片 laminated core 叠片铁芯 short-circuiting ring 短路环 squirrel cage 鼠笼 rotor core 转子铁芯cast-aluminum rotor 铸铝转子 bronze 青铜 horsepower 马力 random-wound 散绕 insulation 绝缘 ac motor 交流环电动机end ring 端环 alloy 合金 coil winding 线圈绕组form-wound 模绕 performance characteristic 工作特性 frequency 频率revolutions per minute 转/分 motoring 电动机驱动generating 发电 per-unit value 标么值 breakdown torque 极限转矩breakaway force 起步阻力 overhauling 检修 wind-driven generator 风动发电机revolutions per second 转/秒 number of poles 极数 speed-torque curve 转速力矩特性曲线plugging 反向制动synchronous speed 同步转速 percentage 百分数 locked-rotor torque 锁定转子转矩 full-load torque 满载转矩 prime mover 原动机 inrush current 涌流。

用于高压高频整流的二极管串联均压问题

用于高压高频整流的二极管串联均压问题陈曦;王瑾;肖岚【摘要】The high voltage and high power converters require high voltage level of the power electronic devices,which would cause extra costs,large volume and short lifetime.One of feasible methods to derate the voltage of the devices is to use the elements coupled in series currently.However,the serial devices can not get equal voltage sharing.This paper discusses the problem of the voltage sharing in series coupled diodes,and some factors that influence this problem are gotten based on the analysis of the equivalent network of the coupled diodes.The influence of the parasitic capacitance and the number of the coupled diodes are discussed,and the phenomenon of unequal distribution of each diode in bridge rectifier circuit is resolved.At last the solution and the experiment verification are given.The simulation and the experiment indicate that the main factor that causes the voltage of the coupled diodes different under high voltage pressure is the parasitic capacitance,and the influence can be solved effectively by coupling a compensating resistance and a compensating capacitor in parallel with each switch.%大功率高压直流输出变换器对电力电子器件的耐压等级要求较高,导致变换器成本增加、体积增大以及寿命减小。

电力电子专业英语词汇

Absorber Circuit 吸收电路AC／AC Frequency Converter 交交变频电路AC power control交流电力控制AC Power Controller交流调功电路AC Power Electronic Switch交流电力电子开关Ac Voltage Controller交流调压电路Asynchronous Modulation异步调制Baker Clamping Circuit贝克箝位电路Bi-directional Triode Thyristor双向晶闸管Bipolar Junction Transistor—— BJT双极结型晶体管Boost-Buck Chopper升降压斩波电路Boost Chopper升压斩波电路Boost Converter升压变换器Bridge Reversible Chopper桥式可逆斩波电路Buck Chopper 降压斩波电路Buck Converter降压变换器Commutation 换流Conduction Angle 导通角Constant Voltage Constant Frequency ——CVCF 恒压恒频Continuous Conduction——CCM （电流）连续模式Control Circuit 控制电路Cuk Circuit CUK 斩波电路Current Reversible Chopper 电流可逆斩波电路Current Source Type Inverter——CSTI 电流（源）型逆变电路Cycloconvertor 周波变流器DC-AC-DC Converter 直交直电路DC Chopping 直流斩波DC Chopping Circuit 直流斩波电路DC-DC Converter 直流－直流变换器Device Commutation 器件换流Direct Current Control 直接电流控制Discontinuous Conduction mode （电流）断续模式displacement factor 位移因数distortion power 畸变功率double end converter 双端电路driving circuit 驱动电路electrical isolation 电气隔离fast acting fuse 快速熔断器fast recovery diode 快恢复二极管fast revcovery epitaxial diodes 快恢复外延二极管fast switching thyristor 快速晶闸管field controlled thyristor 场控晶闸管flyback converter 反激电流forced commutation 强迫换流forward converter 正激电路frequency converter 变频器full bridge converter 全桥电路full bridge rectifier 全桥整流电路full wave rectifier 全波整流电路fundamental factor 基波因数gate turn-off thyristor——GTO 可关断晶闸管general purpose diode 普通二极管giant transistor——GTR 电力晶体管half bridge converter 半桥电路hard switching 硬开关high voltage IC 高压集成电路hysteresis comparison 带环比较方式indirect current control 间接电流控制indirect DC-DC converter 直接电流变换电路insulated-gate bipolar transistor——IGBT 绝缘栅双极晶体管intelligent power module——IPM 智能功率模块integrated gate-commutated thyristor——IGCT 集成门极换流晶闸管inversion 逆变latching effect 擎住效应leakage inductance 漏感light triggered thyristo——LTT 光控晶闸管line commutation 电网换流load commutation 负载换流loop current 环流电力电子专业英语作者：?? 时间：2007-10-19??来源:网络?? 浏览评论?? 推荐给好友?? 我有问题??个性化定制关键词：?电力电子?英语1、元件设备三绕组变压器：three-column?transformer?ThrClnTrans双绕组变压器：double-column?transformer?DblClmnTrans电容器：Capacitor并联电容器：shunt?capacitor电抗器：Reactor母线：Busbar输电线：TransmissionLine发电厂：power?plant断路器：Breaker刀闸(隔离开关)：Isolator分接头：tap电动机：motor--------------------------------------------------------------------------------2、状态参数有功：active?power无功：reactive?power电流：current容量：capacity电压：voltage档位：tap?position有功损耗：reactive?loss无功损耗：active?loss功率因数：power-factor功率：power功角：power-angle电压等级：voltage?grade空载损耗：no-load?loss铁损：iron?loss铜损：copper?loss空载电流：no-load?current阻抗：impedance正序阻抗：positive?sequence?impedance 负序阻抗：negative?sequence?impedance 零序阻抗：zero?sequence?impedance电阻：resistor电抗：reactance电导：conductance电纳：susceptance无功负载：reactive?load?或者QLoad有功负载:?active?load?PLoad遥测：YC(telemetering)遥信：YX励磁电流(转子电流)：magnetizing?current定子：stator功角：power-angle上限:upper?limit下限：lower?limit并列的：apposable高压:?high?voltage低压：low?voltage中压：middle?voltage电力系统?power?system发电机?generator励磁?excitation励磁器?excitor电压?voltage电流?current母线?bus变压器?transformer升压变压器?step-up?transformer高压侧?high?side {{分页}}输电系统?power?transmission?system输电线?transmission?line固定串联电容补偿fixed?series?capacitor?compensation 稳定?stability电压稳定?voltage?stability功角稳定?angle?stability暂态稳定?transient?stability电厂?power?plant能量输送?power?transfer交流?AC装机容量?installed?capacity电网?power?system落点?drop?point开关站?switch?station双回同杆并架?double-circuit?lines?on?the?same?tower 变电站?transformer?substation补偿度?degree?of?compensation高抗?high?voltage?shunt?reactor无功补偿?reactive?power?compensation故障?fault调节?regulation裕度?magin三相故障?three?phase?fault故障切除时间?fault?clearing?time极限切除时间?critical?clearing?time切机?generator?triping高顶值?high?limited?value强行励磁?reinforced?excitation线路补偿器?LDC(line?drop?compensation)机端?generator?terminal静态?static?(state)动态?dynamic?(state)单机无穷大系统?one?machine?-?infinity?bus?system 机端电压控制?AVR电抗?reactance电阻?resistance功角?power?angle有功（功率）?active?power无功（功率）?reactive?power功率因数?power?factor无功电流?reactive?current下降特性?droop?characteristics斜率?slope额定?rating变比?ratio参考值?reference?value电压互感器?PT分接头?tap下降率?droop?rate仿真分析?simulation?analysis传递函数?transfer?function框图?block?diagram受端?receive-side裕度?margin同步?synchronization失去同步?loss?of?synchronization阻尼?damping摇摆?swing保护断路器?circuit?breaker电阻：resistance电抗：reactance阻抗：impedance电导：conductance电纳：susceptance导纳：admittance电感：inductance电容:?capacitance??-------------------------------------------------------------------------------- Absorber??Circuit??——??吸收电路AC/AC??Frequency??Converter??——??交交变频电路??AC??power??control??——??交流电力控制??AC??Power??Controller??——??交流调功电路??AC??Power??Electronic??Switch??——??交流电力电子开关??Ac??Voltage??Controller??——??交流调压电路??Asynchronous??Modulation??——??异步调制{{分页}}??Baker??Clamping??Circuit??——??贝克箝位电路??Bi-directional??Triode??Thyristor??——??双向晶闸管??Bipolar??Junction??Transistor--??BJT??——??双极结型晶体管??Boost-Buck??Chopper??——??升降压斩波电路??Boost??Converter??——??升压变换器??Bridge??Reversible??Chopper??——??桥式可逆斩波电路??Buck??Chopper??——??降压斩波电路??Buck??Converter??——??降压变换器??Commutation??——??换流??Conduction????Angle??——??导通角??Constant??Voltage??Constant??Frequency??--CVCF??——??恒压恒频?? Continuous??Conduction--CCM??——??（电流）连续模式?? Control??Circuit??——??控制电路??Cuk??Circuit??——??CUK斩波电路??Current??Reversible????Chopper??——????电流可逆斩波电路?? Current??Source??Type??Inverter--CSTI??——??电流（源）型逆变电路?? Cycloconvertor??——??周波变流器??DC-AC-DC????Converter??——??直交直电路??DC??Chopping??——??直流斩波??DC??Chopping??Circuit??——??直流斩波电路??DC-DC??Converter??——??直流－直流变换器Device??Commutation??——??器件换流??Direct??Current??Control??——??直接电流控制??Discontinuous??Conduction??mode??——??（电流）断续模式?? displacement??factor??——??位移因数??distortion??power??——??畸变功率??driving??circuit??——??驱动电路??electrical??isolation??——??电气隔离??fast??acting??fuse??——????快速熔断器??fast??recovery??diode??——??快恢复二极管??fast??recovery??epitaxial??diodes??——??快恢复外延二极管?? fast??switching??thyristor??——??快速晶闸管??field??controlled????thyristor??——??场控晶闸管?? flyback??converter??——??反激电流??forced??commutation??——??强迫换流??forward??converter??——??正激电路??frequency??converter????——??变频器??full??bridge??converter??——??全桥电路??full??bridge??rectifier??——??全桥整流电路??full??wave??rectifier??——??全波整流电路?? fundamental??factor??——??基波因数gate????turn-off??thyristor——GTO??——??可关断晶闸管?? general??purpose??diode??——??普通二极管??giant??transistor——GTR??——????电力晶体管??half??bridge??converter??——??半桥电路??hard??switching????——??硬开关??high??voltage??IC????——??高压集成电路??hysteresis??comparison??——??带环比较方式??indirect??current??control??——??间接电流控制??indirect??DC-DC??converter??——??直接电流变换电路??insulated-gate??bipolar??transistor---IGBT??——??绝缘栅双极晶体管intelligent??power??module---IPM??——??智能功率模块??integrated??gate-commutated??thyristor---IGCT??——??集成门极换流晶闸管?? inversion??——??逆变??latching??effect??——??擎住效应??leakage??inductance??——??漏感??light??triggered??thyristo---LTT??——??光控晶闸管??line??commutation??——??电网换流??load??commutation??——??负载换流??loop??current??——????环流。

高压二极管参数 2CL4509H 2CL4512H

2CL4509H 、2CL4512H微波爐用高壓二極管High Voltage Diodes for Micro-Micro-W W ave Oven ■特徵Features■外形尺寸和印記Outline Dimensions and Mark●I F （AV ）450mA 單位Unit ：mm●V RRM 9kV ,12kV ●高可靠性High reliability■用途Applications●微波爐及其他電子設備高壓電源整流用Rectification for high voltage power supply of magnetron in Micro wave oven and others..■極限值（絕對最大額定值）Limiting Values （Absolute Maximum Rating ）﹡散熱方式：將負極端子固定在厚度為0.6mm,面積為50mm ×50mm 以上的散熱片上，風冷條件：0.5m/sCooling Requirement:Cathode terminal is fastened to radiating fin that size is more than 50mm ×50mm ×0.6mm Wind-cooled velocity is more than 0.5m/s■電特性（T a =25℃除非另有規定）Electrical Characteristics （T a =25℃Unless otherwise specified ）參數名稱Item符號Symbol 單位Unit 2CL4509H2CL4512H反向重復峰值電壓Repetitive Peak Reverse Voltage V RRM kV 912正向平均電流Average Forward Current I F(AV)mA 450（正弦半波50H Z ，電阻負載，T a ≤60℃﹡）(50H Z Half-sine wave,Resistance load,T a ≤60℃)正向浪湧電流Forward Surge Current I FSM A 30（正弦半波50H Z ，一個周期，T a =25℃）（50H Z Half-sine wave,一個周期，T a =25℃）反向浪湧電流Reverse Surge Current I RSM mA 100(方波、W P =1ms,單脈衝，T a =25℃)(W P =1ms,Rectangular-wave,One-shot,T a =25℃)有效結溫Virtual Junction Temperature T (vj)℃130貯存溫度Storage TemperatureT stg℃-40~+130參數名稱Item 符號Symbol單位Unit 測試條件Test Condition 2CL4509H2CL4512H 正向峰值電壓Peak Forward Voltage V FMV I FM =450mA ≤10≤12反向峰值電流Peak Reverse Current I RRM1μA V RM =V RRM ≤5雪崩擊穿電壓Avalanche Breakdown VoltageV （BR ）kVI R =100μA≥9.5≥12.5SHENZHEN BINGXU TECHNOLOGY CO,.LTD.2CL4509H 、2CL4512H●安全試驗Safety Test寬3mm 金屬箔卷在管體中央3mm Wide metal film is rolled on the surface middle ofdiode body1.絕緣電阻試驗：AB 之間施加500V直流電壓，用絕緣電阻表測，絕緣電阻大於1000M Ω。

二极管参数中英文对照表

Cj Junction Capacitance 结电容ηV Rectification Efficiency 整流效率If DC Forward Current 正向直流电流I(AV) Average Forward Rectified Current 正向平均整流电流ID Stand-off Reverse Leakage Current 关态反向漏电流IFSM Peak Forward Surge Current 正向浪涌峰植电流ITSM Non Repetitive Surge Peak on-state Current 不重复浪涌峰值开态电流IDM Maximum Reverse Leakage 最大反向漏电流IFRM Repetitive Peak Forward Current 正向重复峰值电流IH Holding Current 维持电流IO Mean Forward Current 正向平均电流IR Reverse Leakage Current 反向漏电流Irr Reverse Recovery Current 反向恢复电流IPPM Maximum peak lmpulse Current 最大脉冲峰值电流IRM Maximum peak Reverse Current 最大峰值反向电流IRM(REC) Maximum peak Reverse recovery Current 最大峰值反向恢复电流IRSM Maximum Non-repetitive recovery Peak Current 最大峰值反向恢复电流IT On-state Test Current 导通测试电流I2t Rating for fusing 正向浪涌电流的平方对电流浪涌持续时间的积分值PM(AV) Maximum Steady State Power Dissipation 最大稳态功耗PPM Peak Pulse Power Dissipation 峰值脉冲功耗Ptot Total Power Dissipation 总功耗Qrr Recovered Charge 恢复电荷ROJA Thermal Resistance (Junction to Ambient) 热阻（结到环境）ROJC Thermal Resistance（Junction to Case ）热阻（结到管壳）ROJL Thermal Resistance（Junction to Lead ）热阻（结到引线）TA Ambient Temperature 环境温度TC Case Temperature 管壳温度td Time Duration 持续时间tf Fall Time 下降时间Tj Junction Temperature 结温TL Lead Temperature 引线温度tfr Forward Recovery Time 正向恢复时间tr Rise Time 上升时间trr Reverse Recovery Time 反向恢复时间TSTG Storage Temperature 存储温度VBO Breakover Voltage 转折电压V（BR）Reverse Breakdown Voltage 反向击穿电压VF Instantaneous Forward Voltage 正向瞬态电压VFR Forward Recovery Voltage 正向恢复电压VDC,VR DC Reverse Voltage 反向直流电流VRM Maximum Reverse Paek Reverse Voltage 最大重复峰值反向电压VRMS RMS Input Voltage 均方根输入电压VRRM Peak Repetitive Reverse Voltage 反向重复峰值电压VWM Working Peak Reverse Voltage 反向工作峰值电压VC Clamping Voltage 箝位电压VWM Working Stand-off Voltage 关态工作电压VZ Zener Voltage 齐纳电压ZZ Dynamia Zener Impedance 动态齐纳阻抗αVF Temperature coefficient of forward voltage 正向压降的温度系数二极管类型与英文对照表1)变容二极管Varactor diode2)肖特基二极管SRSchottky rectifier diode3)高效二极管HERHigh efficiency rectifier diode4)快恢复二极管FRFast recovery recovery rectifier diode5)特快恢复二极管SFSuper fast recovery rectifier diode6)超速恢复二极管UFUltrafast rectifier diode7)肖特基栅栏二极管SB SR Schottky barrier rectifier diode8)电压瞬间抑制二极管(如P4KE6.8) TVS diode。

6-DIODE

HK WA CHING ELECTRONIC (GROUP) LIMITED
二极管基本结构 (Diode Structure)
当系统达到热平衡后: (b)图显示出对应各区的电子与电洞浓度分布 (c)图显示出电位的分布，p 型n 型其间的电位差我们称为内建电位。对电洞而言，要由n 型区进入p 型区，必须克服此内建电位，对电子而言，要由n型区进入p 型区一样要克服此内建电位。也就是说有一特定方向（由 p 流向n 型区）电流较易通过，而相反方向则不易通过。简单的说，他是电流的单行道，也就是具有“整流效应” 极管(Vari-Capacitance diode)
变容二极管广泛应用于电视接收器电路、调频接收器及其它通信设备上。在逆向偏压时，二极管具有很大的逆向电阻ＲR ，此电阻依少数载子及表面泄漏电流而定，一般ＲR都在ＭΩ的范围。除此电阻外，二极管还具有内部电容ＣT，由下图可看出此电容的存在。当逆向偏压时，Ｐ型区及Ｎ型区如同一个电容器的平行板面，而P-N空乏层即如同电容的介质。
HK WA CHING ELECTRONIC (GROUP) LIMITED
二极管伏安特性曲线
(1) 正向特性当0＜V＜Vth时，正向电流为零，Vth 称为死区电压或开启电压。当V＞Vth时，开始出现正向电流，并按指数规律增长。 (2) 反向特性当VBR＜V＜0时，反向电流很小，且基本不随反向电压的变化而变化，此时的反向电流也称反向饱和电流IS。当V≥VBR时，反向电流急剧增加， VBR称为反向击穿电压。从击穿的机理上看，硅二极管若 |VBR|≥7 V时，主要是雪崩击穿；若 VBR≤4 V则主要是齐纳击穿，当在4 V～7 V之间两种击穿都有，
HK WA CHING ELECTRONIC (GROUP) LIMITED

CL01-12

IF =350mA TA=25℃
符号
Symbol VF IRM1 IRM2
CL01-12
12 5
单位
Unit
V µA
TA=100℃ 高温反向漏电流 High Temperature Reverse Current
50
µA
大昌电子 DACHANG ELECTRONICS
SIYU R
特性曲线 Characteristic Curves
SIYU R
塑封高压二极管
反向电压 12KV 正向电流 350m A 特征 Features
MIN
24
1.2
CL01-12
Plastic High Voltage Rectifier
Reverse Voltage 12KV Forward Current 350mA
· IF(AV) ·VRRM ·高可靠性
350
mA
12KV
High reliability
22
7.5
用途
Purpose
MIN
24
·微波炉及其他电子设备高压电源整流用 Rectification for high voltage power supply of magnetron in Micro wave owen and others
Ratings at 25℃ ambient temperature unless oHale Waihona Puke herwise specified.
符号
Symbol VRRM IF(AV) IFSM Tamb T(vJ) Tstg
CL01-12 12 350 30 -40 --- +130 100 -40 --- +130