AO4488 规格书

Symbol 10 Sec Steady State
V DS V GS
201517
12
I DM I AR E AR 3.1 1.72.0 1.1
T J , T STG
Parameter
Symbol
Typ Max t ≤ 10s
3140Steady State 5975Steady State
R θJL
1624W ±20
°C/W R θJA °C
-55 to 150
Absolute Maximum Ratings T A =25°C unless otherwise noted P D Maximum Junction-to-Lead
C
°C/W
Thermal Characteristics
Units Maximum Junction-to-Ambient A
°C/W Maximum Junction-to-Ambient A
Units Parameter T A =25°C T A =70°C
V V
I D Gate-Source Voltage Drain-Source Voltage 30Power Dissipation
A
T A =25°C Junction and Storage Temperature Range T A =70°C Repetitive avalanche energy L=0.3mH G
mJ
80A
50375
Pulsed Drain Current B Avalanche Current G
Continuous Drain Current A
100% UIS Tested 100% Rg Tested
SOIC-8
Top View Bottom View
Pin1
G
D
S
Symbol
Min Typ Max
Units BV DSS 30
35.5
V
1T J = 55°C
5I GSS ±10V GS(th) 1.0 1.7
2.5
V I D(ON)
80
A 3.8 4.6T J =125°C
5.3
6.55.2 6.4
g FS 72S V SD 0.69
1V I S
3
A C iss 5450
6800pF C oss 760pF C rss 540pF R g
1 1.5ΩQ g (10V)84
112nC Q g (4.5V)4256nC Q gs 12nC Q gd 21nC t D(on)13
ns t r 9.8ns t D(off)49ns t f 16ns t rr 4256ns Q rr
31
nC 0THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Total Gate Charge V GS =10V, V DS =15V, I D =20A
Output Capacitance
Turn-On Rise Time Total Gate Charge Gate Source Charge Gate Drain Charge Turn-Off DelayTime V GS =10V, V DS =15V, R L =0.75Ω,
R GEN =3Ω
Turn-Off Fall Time
Turn-On DelayTime I S = 1A,V GS = 0V
V DS = 5V, I D = 20A Forward Transconductance SWITCHING PARAMETERS DYNAMIC PARAMETERS Maximum Body-Diode Continuous Current
Gate resistance
V GS =0V, V DS =0V, f=1MHz
V GS =0V, V DS =15V, f=1MHz Input Capacitance m Ω
Gate Threshold Voltage V DS = V GS I D = 250µA Electrical Characteristics (T J =25°C unless otherwise noted)STATIC PARAMETERS Parameter
Conditions µA
I DSS R DS(ON)Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I F =20A, dI/dt=100A/µs
V GS = 10V, I D = 20A
Reverse Transfer Capacitance I F =20A, dI/dt=100A/µs
Static Drain-Source On-Resistance
Diode Forward Voltage
V GS = 4.5V, I D = 18A
Drain-Source Breakdown Voltage On state drain current
I D = 250µA, V GS = 0V V GS = 10V, V DS = 5V V DS = 30V, V GS = 0V
V DS = 0V, V GS = ±16V Zero Gate Voltage Drain Current Gate-Body leakage current A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A = 25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using < 300µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The SOA curve provides a single pulse rating.
F. The current rating is based on the t ≤ 10s thermal resistance rating.
G. E AR and I AR ratings are based on low frequency and duty cycles to keep T j =25C.Rev6: Nov. 2010
Vds
Charge
Gate Charge Test Circuit & Waveform
Vdd
90%
Resistive Switching Test Circuit & Waveforms
Vdd
Vds
Id
Vgs
BV I
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
AR
DSS
2
E = 1/2 LI Vdd AR AR。