IC封装基础资料

High temperature(180°c)
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Wire Bonding Cycle (3)
Ø
Capillary rises to loop height position
W/C Open 依照 Loop parameter CAP上升到 Loop height position
金球和鋁墊相粘
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Wire Bonding Cycle (4)
Formation of the loop
W/C close 依照 Loop parameter, CAP以機械動作折出弧形
Tail length
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Wire Bonding Cycle (7)
Ø
Disconnection of the tail bond
W/C close CAP rise Cut off G/W
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Wire Bonder
Wire Feeder
Loader
Unloader
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Molding Compound Chip
Epoxy Gold wire
Lead Frame
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Equipment : Wire Bonder
Shinkawa UTC-250BI UTC-300BI K&S 8020/8028 8028 PPS ASM AB339 EAGLE
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Wire Bonding Cycle (8)
Ø
Formation of a new FAB
Wire clamp close
High voltage Low Electricity
Dejunk/ Trim Dejunk/ Trim Ball Attach Ball Attach
Solder Plating Solder Plating (L/F type only) (L/F type only)
Solder Plating Solder Plating Inspection (L/F) Inspection (L/F)
Die Coating & Curing Die Coating & Curing (option) (option)
3rd Optical Inspection 3rd Optical Inspection
Plasma Plasma (option) (option)
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long
Higher Worse
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Gold Wire Electrical Resistance
合金系ボンディング ワイヤの電気抵抗
200
verj.002
150
４Ｎ系 G1(合金) R1(合金)
Type (relate electrical properties)
• 4N • Au alloy
HAZ (Heat Affected Zone)
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Characteristic of gold wire (2)
Characteristic of Capillary(1)
Tip Diameter (T) Hole Diameter (H) Chamfer Diameter (CD) Inside Chamfer Angle (ICA) Face Angle (FA) Outside Radius (OR) Bottleneck Height (BTNKH) Bottleneck Angle (BTNKA) Cone Angle (CA)
Die
Lead
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Wire Bonding Cycle (5)
Ø
Formation of the 2nd bond
W/C close 等速度下降 Ultrasonic
L/F:金銀共金 SBT:金金共金
Forming/Singulation Forming/Singulation Singulation/Saw Singulation/Saw
Open/Short Test Open/Short Test (option) (option)
Lead Scan Lead Scan
Final Visual Final Visual
Wire Bond Process
Prepared by : Jerry Hsu Rev. : O
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Assembly Process Flow -- Front-end
Lead frame , Substrate & FC
Working Area
Bond Head
Transducer
Feeder Heater
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Motion Principle
Loading P.R.S. Wire Bonding Unloader
High temperature(180°c)
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Wire Bonding Cycle (6)
Ø
Creation of the tail length
W/C Open 依照 EFO parameter CAP上升到tail height position
Direct Material：
• Gold wire • SBT(L/F)
Indirect Material：
• Capillary
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Characteristic of gold wire (1)
Breaking load
low
Wire sweep after molding 2nd bondability Bigger better
high
lower worse
HAZ length
short
Loop height Loop height stability in low loop lower better
Assembly Process Flow -- Back-end
Lead frame , Substrate & FC
Molding Molding Underfill Underfill Post Mold Cure Post Mold Cure Underfill Cure Underfill Cure Laser Marking Laser Marking or Ink Marking or Ink Marking
Characteristic of SBT
Finger top width Finger pitch Au plating thickness (0.5~1um) Ni plating thickness (5~15um)
Finger top width
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Wire Bonding Cycle (1)
Ø
Step 1. FAB (Free Air Ball) formation
Wire clamp close
High voltage Low Electricity
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Wire Bonding Cycle (2)
Ø
Formation of the 1st bond
Ultrasonic 等速度下降 W/C Open 金鋁共金
W/C Open
AL PAD
Wafer Incoming Wafer Incoming Wafer Taping Wafer Taping
Wafer Back Grinding Wafer Back Grinding
Wafer De-taping Wafer De-taping
Wafer Mount Wafer Mount
Wafer Saw Wafer Saw
Bond Time Ultrasonic
• Frequency (60KHz, 120KHz, 138KHz) • Power
Force Temperature Looping
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Materials
The Basic Gold Ball Wire Bonding Cycle ¶ Free air ball is captured in the chamfer · Formation of a first bond ¸ Formation of a loop ¹ Formation of a second bond º Disconnection of the tail » Formation of a new free air ball. Ready for a new cycle
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Wire bond
1st Bond
2nd Bond
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Bonding Parameter
ワイヤの比抵抗
４Ｎ系 合金系 (G1) 〃 (R1) 2.30 2.98 3.20
電気抵抗／Ωｍ
100
50
0 10 20
線径／μm
30
40
測定方法は４端子法を用いています。
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Characteristic of gold wire (3)
2nd Optical Inspection 2nd Optical Inspection
Die Bond & Cure Die Bond & Cure Substrate Baking Substrate Baking
Wire Bond Wire Bond Chip Attach Chip Attach
Mechanical properties
• Breaking Load • Elongation
Type of spool
• Conductive • Non conductive
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4nd Optical 4nd Optical
Packing Packing
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Purpose
將Chip上的銲墊(Bonding Pad)以金線與基 板(SBT)或導線架(Lead Frame)按設計指 定的方式連接.