TLP781光耦

Individual Electrical Characteristics (Ta = 25°C)
LED
Characteristic
Forward voltage Reverse current Capacitance Collector−emitter breakdown voltage Emitter−collector breakdown voltage
Current Transfer Ratio (%)
(IC / IF)
IF = 5mA, VCE = 5V, Ta = 25°C
Min
Max
50
600
50
150
100
300
200
600
100
600
75
150
100
200
150
300
200
400
Marking Of Classification
Blank, Y, Y+, YE,G, G+, B, B+,BL,GB YE GR BL GB Y+ G G+ B
TLP781
Unit in mm
The TOSHIBA TLP781 consists of a silicone photo−transistor optically coupled to a gallium arsenide infrared emitting diode in a four lead plastic DIP (DIP4) with having high isolation voltage (AC: 5kVRMS (min)).
Switching Characteristics (Ta = 25°C)
ID(ICEO)
VCE = 24 V
VCE = 24 V Ta = 85°C
CCE
V = 0, f = 1 MHz
Min Typ. Max Unit
1.0 1.15 1.3
V
―
―
10
μA
―
30
―
pF
80
―
―
V
7
―
―
V
―
0.01 0.1
μA
―
0.6
50
μA
―
10
―
pF
Detector
Coupled Electrical Characteristics (Ta = 25°C)
PC ΔPC / °C
150 −1.5
mW mW / °C
Junction temperature Operating temperature range Storage temperature range
Tj
125
°C
Topr
−55~110
°C
Tstg
−55~125
°C
Lead soldering temperature (10s)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Forward current Forward current derating(Ta ≥ 39°C)
IF ΔIF / °C
60
mA
−0.7
mA / °C
LED
Pulse forward current
VCEO
80
V
Emitter−collector voltage
VECO
7
V
Detector
Collector current
IC
50
mA
Power dissipation(single circuit)
Power dissipation derating (Ta ≥ 25°C)(single circuit)
TLP781/TLP781F
TOSHIBA Photocoupler GaAs IRED & Photo−Transistor
TLP781, TLP781F
Office Equipment Household Appliances Solid State Relays Switching Power Supplies Various Controllers Signal Transmission Between Different Voltage Circuits
(Note 3)
IFP
1
A
Power dissipation
PD
100
mW
Power dissipation derating
ΔPD / °C
−1.0
mW / °C
Reverse voltage
VR
5
V
Junction temperature
Tj
125
°C
Collector−emitter voltage
2007-12-05
Current Transfer Ratio
Type TLP781
Classi− fication (Note 1)
(None) Rank Y Rank GR Rank BL Rank GB Rank YH Rank GRL Rank GRH Rank BLL
TLP781/TLP781F
Approved no.8961 BS EN60950-1:2006 Approved no.8962 • SEMKO approval: EN60950-1,EN60065 under plan
• Option(D4)type VDE approved : DIN EN60747-5-2 Certificate No. 40021173 (Note): When an EN60747-5-2 approved type is needed, Please designate “Option (D4)”
(Note 3): 100μs pulse, 100Hz frequency
(Note 4): AC, 1 min., R.H.≤ 60%. Apply voltage to LED pin and detector pin together.
2
2007-12-05
Recommended Operating Conditions
Vrms
(Note): Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
8.0mm(min)
8.0mm(min)
0.4mm(min)
1
TOSHIBA Weight: 0.25g (typ.TOSHIBA
Weight: 0.25g (typ.)
Pin Configurations (top view)
1
4
2
3
1 : Anode 2 : Cathode 3 : Emitter 4 : Collector
Characteristic Current transfer ratio
Saturated CTR
Collector−emitter saturation voltage
Symbol
Test Condition
Min Typ. Max Unit
IC / IF
IF = 5 mA, VCE = 5 V
―
0.4
Isolation Characteristics (Ta = 25°C)
Characteristic Capacitance (input to output) Isolation resistance
Isolation voltage
Symbol
Test Condition
CS
VS = 0, f = 1 MHz
• Construction mechanical rating
7.62mm Pitch Standard Type
Creepage distance
6.5mm(min)
Clearance
6.5mm(min)
Insulation thickness
0.4mm(min)
10.16mm Pitch TLPxxxF Type
Tsol
260
°C
Total package power dissipation
Total package power dissipation derating (Ta ≥ 25°C)
PT ΔPT / °C
250 −2.5
mW mW / °C
Isolation voltage
(Note 4)
BVS
5000
(Note 1): Ex. rank GB: TLP781 (GB)
(Note 2): Application type name for certification test, please use standard product type name, i. e. TLP781 (GB): TLP781
RS
VS = 500 V
AC, 1 minute
BVS
AC, 1 second, in oil
DC, 1 minute, in oil
3
Min Typ. Max Unit
―
0.8
―
1×1012 1014
―
5000 ―
―
― 10000 ―
― 10000 ―
pF Ω Vrms Vdc
2007-12-05
TLP781/TLP781F
Characteristic
Symbol
Min
Typ. Max
Unit
Supply voltage
VCC
―
5
24
V
Forward current
IF
―
16
25
mA
Collector current
IC
―
1
10
mA
Operating temperature
Topr
−25
―
85
50
Rank GB 100
― ―
600 600
%
IC / IF (sat)
IF = 1 mA, VCE = 0.4 V Rank GB
― 30
60 ―
― ―
%
IC = 2.4 mA, IF = 8 mA
―
―
0.4
VCE (sat) IC = 0.2 mA, IF = 1 mA
―
0.2
―
V
Rank GB ―
°C
(Note): Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document.
• TLP781 : 7.62mm pitch type DIP4 • TLP781F : 10.16mm pitch type DIP4 • Collector-emitter voltage: 80V (min.) • Current transfer ratio: 50% (min.)
Rank GB: 100% (min.) • Isolation voltage: 5000Vrms (min.) • UL recognized: UL1577, file No. E67349 • BSI approved: BS EN60065:2002
Collector dark current
Capacitance (collector to emitter)
Symbol
Test Condition
VF
IF = 10 mA
IR
VR = 5 V
CT
V = 0, f = 1 MHz
V(BR) CEO IC = 0.5 mA
V(BR) ECO IE = 0.1 mA