中高压电容
高压电容原理
高压电容原理高压电容是一种能够储存大量电荷并产生高电压的电子元件。
它在许多电子设备中都有广泛的应用,比如脉冲功率放大器、医疗设备、雷达系统等。
在本文中,我们将详细介绍高压电容的工作原理及其在电子领域中的应用。
首先,让我们来了解一下高压电容的结构。
高压电容通常由两个导体之间夹着一层绝缘材料构成。
这两个导体分别连接到电路中的正负极,而绝缘材料则阻止电荷在两个导体之间流动。
当电压施加在高压电容上时,正极吸引负电荷,负极吸引正电荷,导致电容器内部储存了大量电荷,从而产生了高电压。
其次,我们来看一下高压电容的工作原理。
高压电容的工作原理可以用电场理论来解释。
当电压施加在高压电容上时,导体内部会产生电场,而绝缘材料则会阻止电场的扩散,使得电场能够在导体之间储存。
这样一来,高压电容就能够储存大量的电荷并产生高电压。
高压电容在电子领域中有着广泛的应用。
首先,它常常被用于脉冲功率放大器中。
脉冲功率放大器需要在极短的时间内输出大量的电能,而高压电容正是能够满足这一需求的元件。
其次,高压电容也被广泛应用于医疗设备中。
比如X射线机、核磁共振仪等医疗设备都需要高压电容来产生高电压。
此外,雷达系统、激光器等设备中也离不开高压电容的应用。
总之,高压电容是一种能够储存大量电荷并产生高电压的电子元件。
它的工作原理基于电场理论,通过两个导体之间的绝缘材料来储存电荷并产生高电压。
在电子领域中,高压电容有着广泛的应用,比如脉冲功率放大器、医疗设备、雷达系统等。
希望本文能够帮助大家更好地了解高压电容的原理及其在电子领域中的应用。
低中高压瓷片陶瓷电容器资料规格书
4.0
9.0
5.0 / 7.5
4.0
10.0
5.0 / 7.5
4.0
11.0
5.0 / 7.5
4.0
12.0
5.0 / 7.5
4.0
13.0
5.0 / 7.5
4.0
14.0
5.0 / 7.5
4.0
15.0
5.0 / 7.5
4.0
16.0
5.0 / 7.5
4.0
17.0
5.0 / 7.5
4.0
6.0
5.0 / 7.5
3. Stable capacitance change over the specified temperature.
Product Type
3. ( S - C ) 682PF ~ 224PF measured at 1KHz±10%, 0.1V rms, 25℃
Temp. Range
- 25 ℃ to + 85 ℃
Taping (Radial) -- Lead Spaciபைடு நூலகம்g F = 2.5 / 5.0 / 6.35 / 7.5 ± 0.8
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高压补偿电容工作原理
高压补偿电容工作原理
高压补偿电容是一种用于电力系统中的电气设备,它主要用于提供高压稳定、降低电力系统中的无功功率,并改善系统的功率因数。
它的工作原理是利用电容器的电容特性来补偿电力系统中的无功功率。
在电力系统中,无功功率是一种虚功,它跟随电流的变化而变化,导致电流和电压之间存在相移,从而降低了系统的功率因数。
高压补偿电容器通过串联在电力系统中,将其与系统中的电流进行并联,形成一个谐振回路。
当电源电压为正弦波时,电容器中的电流会滞后于电压,形成一个比电压滞后90度的相位差,这样就可以在电流相位上提前于电压相位来达到电流与电压正相位对齐的效果。
通过这种方式,高压补偿电容器将无功功率转化为有功功率,从而提高系统的功率因数。
同时,高压补偿电容器也可以起到电压稳定的作用。
由于电容器的电压与电流之间存在相位差,当电压波动时,电容器能够吸收或释放电能,使系统的电压保持在较稳定的水平。
总的来说,高压补偿电容通过改变电流相位,将无功功率转化为有功功率,并提高系统的功率因数,同时还可以起到电压稳定的作用。
它在电力系统中的应用,能够提高系统的效率,减少电能损耗,并提高电力传输的质量。
风华电容测试方法
Y5V Z5U
C≤25 nF, Ri≥4000MΩ C>25 nF, Ri・CR>100S
版 本 号 .
FH2007-001
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13
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风华高科
广 东 风 华 高 新 科 技 股 份 有 限 公 司
FENGHUA
Fenghua Advanced Technology (Holding) CO. , LTD
FENGHUA
Fenghua Advanced Technology (Holding) CO. , LTD
测 试 方 法 Test Method and Remarks 试验基板:Al2O3 或 PCB 弯曲深度:1mm 施压速度:0.5mm/sec. 单位:mm
项目 Item
技术规格 Technical Specification
≤1000pF 1MHZ±10% >1000 pF 1KHZ±10% 测试温度: 25℃±3℃ Test Temprature: 25℃±3℃ C≤10µF:测试频率: 1KHZ±10% 测试电压: 1.0±0.2Vrms Test Frequency: 1KHZ±10% Test Voltage: 1.0±0.2Vrms
风华高科
广 东 风 华 高 新 科 技 股 份 有 限 公 司
FENGHUA
Fenghua Advanced Technology (Holding) CO. , LTD
中高压电容器测试方法: measurement method for high voltage MLCC
额定电压范围 Rated voltage range 耐电性能的测试方法 Measuring Method 施加额定电压的 200%, 5 秒, 最大电流不超过 50mA 100V≤Vr<500V Force 200%Rated voltage for 5 second. Max..current should not exceed 50 mA. 施加额定电压的 150%, 5 秒, 最大电流不超过 50mA 500V≤Vr≤1000V Force 150%Rated voltage for 5 second. Max..current should not exceed 50 mA. 施加额定电压的 120%, 5 秒, 最大电流不超过 50mA 1000V<Vr≤2000V Force 120%Rated voltage for 5 seconds. Max..current should not exceed 50 mA. 施加额定电压的 120%, 5 秒, 最大电流不超过 10mA 2000V<Vr≤5000V Force 120%Rated voltage for 5 seconds. Max..current should not exceed 10 mA.
中高低压陶瓷电容
中高低压陶瓷电容一、陶瓷电容的基本概念说到陶瓷电容啊,很多人可能第一反应就是“电容”两个字,但你要知道,电容这个东西可不仅仅是个“电”字那么简单。
电容器其实是用来储存电荷的一种小设备,基本上,几乎每个电子设备里都能找到它的身影。
比如你的手机、电视、甚至洗衣机,里面都有它的“影子”。
至于“陶瓷”这个词嘛,咱就理解成它的外壳是陶瓷做的,大家都知道,陶瓷这种材料比较耐高温,也比较稳固,给电容的工作提供了一个不错的“外套”。
不同的电压等级的陶瓷电容性能可差别大了——别看它们都是陶瓷电容,区别还真不小呢。
高压的、中压的、低压的,都有各自的独特性。
二、1. 低压陶瓷电容,耐用又不贵低压陶瓷电容其实是最常见的一种。
它们一般用在5V、12V这些低电压的电子设备里,像是电视机、空调、音响这种日常家电。
它们的一个特点就是成本低、体积小,放在电路里不占地儿又不贵,简直就是“居家旅行”的好帮手。
有时候你开着空调,突然想:“空调能坏吗?它可是贵得要死的!”背后很多的电路稳定,都是靠这些低压陶瓷电容在默默地支持着。
因为它们的价格亲民,坏了换一个也不心疼,反正它们“死得快”,换起来方便,还是挺划算的。
2. 中压陶瓷电容,日常运转的得力助手。
中压陶瓷电容就有点“居中调和”的味道了。
它们通常用于25V到250V这种中等电压的设备,像是计算机电源、家用电器的主板上都能看到它们的身影。
不得不说,这些中压电容的“担子”可不轻,它们要在一定电压下保证电路的正常运行,不让电流不稳定影响到设备的使用。
换句话说,就是电压过高或者过低,电容都得能承受得了。
说起来,中压陶瓷电容的优点就是它们的工作稳定性和可靠性,算是那个“老实巴交”的电路守护者。
即使负载变化大,它们也能顶住,反正是中流砥柱。
3. 高压陶瓷电容,实力派中的“大哥” 。
咱们再说说高压陶瓷电容,哦,别小看了这帮“高压电容”,它们一般用于更高电压的环境里,比如工业设备、变压器、一些大型电力系统,啥?听起来有点高大上吧?是的,它们就是干这些“吃重”的活的。
风华电容器全系列产品规格书
风华高科
广 东 风 华 高 新 科 技 股 份 有 限 公 司
FENGHUA
Fenghua Advanced Technology (Holding) CO. , LTD
※Y5V:The capacitor made of this kind of material is the highest dielectric constant of all ceramic capacitors. They are used over a moderate temperature range in application where high capacitance is required because of its unstable temperature coefficient, but where moderate losses and capacitance changes can be tolerated. Its capacitance and dissipation factors are sensible to measuring conditions, such as temperature and voltage, etc. ※Z5U:The capacitor made of this kind of material is considered as ClassⅡ capacitor, whose temperature characteristic is between that of X7R and Y5V. The capacitance of this kind of capacitor is unstable and sensible to temperature and voltage. Ideally suited for bypassing and decoupling application circuits operating with low DC bias in the environment approaches to room temperature. 二、结构及尺寸
中高压陶瓷电容,X7R系列规格 容 量 范 围
∙X7R系列规格容量范围(pf)
∙COG特性规格容量范围(pf)
* 产品型号规格表述例:
PME1206X7R102K202NT3
① “PME” 表示贵金属内电极的片式多层陶瓷电容器;如为“BME”表示贱金属内极的MLCC。
② “1206”表示产品尺寸规格,长宽与上表对应;
③ “X7R”表示产品的介质特性(按温度系数或温度特性分类:C0G、X7R、Y5V);
④ “102”表示标称电容量(单位:pF),前两位数码为有效数字,后一位数码为10的幂数;
当标称电容量小于10pF时,以字母R表示小数点,如:4R7表示4.7pF;0R5表示0.5pF;
⑤ “K”表示标称电容量允许偏差为+10%;
⑥ “202”表示额定电压(单位:V),前两位数码为有效数字,后一位数码为10的幂数;
⑦ “N”表示端电极类型,N表示Ag(或Cu)/Ni/Sn三层结构;
⑧ “T”表示包装形式,T表示编带包装,B表示散包装
⑨ “3”表示产品厚度。
空缺表示不作明确规定。
中高压高频片式瓷介电容器
鉴定批准试验施加电压时间为 1min;
对于质量一致性检验的逐批检验施加电压时 间为(5±1)s; 浪涌电流的限制值不超过 50mA;
QJ、△J 、CC、SAST、QJB(M)/K+、QJB/K: 测试电压:(1±0.2)V 有效值
tgδ≤ 0.0015 G、J: CR<50pF, tgδ≤1.5×(150/CR+7) ×10-4; CR≥50pF, tgδ≤ 0.0015
101~472 101~222 101~102
101~682 101~332 101~152
101~103 101~682 101~472
允许偏差 3KV
--
--
--
--
C、D、J、K
--
--
--
4545 5868
101~223 101~473
101~153 101~223
101~103 101~153
注:上述容量范围同样适用于 CASS A:CASS/08.1-2015+ CASTPSW02/008B-2013 质量等级。
允许偏差 C、D、J、K
SASTYPS0601/0004-2015 SAST
标称容量范围(温度系数 CG)
300V
630V
1KV
2KV
0805
1R0~511
1R0~221
--
--
CASS/08.1-2015+Q/RQ26021A-2014 CASS/08.1-2015+Q/HK26013-2012 ASTG0601-2015-001+ Q/RQ26021A-2014 ASTG0601-2015-001+Q/HK26013-2012+QZJ840624
风华中高压贴片电容规格书
MULTILAYER CHIP CERAMIC CAPACITOR(:)DC Medium-voltage MLCCDC medium-voltage MLCC has good high-voltage reliability,it is made in special design that based on the MLCC technology and equipments.It is suitable for surface-mounting ,can improve the properties of circuits.New monolithic structureThe size of the capacitor is small,yet has high electrostatic capacitance,can operate at high-voltage levels.Has good solderability.Technology Parameter (refer to the picture below):DC-DC converter.The circuit filter and vibration bell of telephone,electrograph and modem.Snubber circuit for switching power supply.FeaturesApplicationsProduct Part Number Expression1206CG100J202NTWMULTILAYER CHIP CERAMIC CAPACITORCapacitance RangeOutside DimensionWMULTILAYER CHIP CERAMIC CAPACITORMULTILAYER CHIP CERAMIC CAPACITORMULTILAYER CHIP CERAMIC CAPACITOR【 南京南山半导体有限公司 — 贴片电容选型资料】MULTILAYER CHIP CERAMIC CAPACITORX7R 1808 (V)10018122225200 200 200 5001000 2000 3000 4000 100 500 1000 2000 3000 4000 100 500 1000 2000 3000 4000 5000 /250 /250 /250100PF 150PF 330PF 470PF 680PF 1000PF 1nF 2.2nF 3.3nF 4.7nF 6.8nF 10nF 12nF 15nF 22nF 27nF 33nF 39nF 47nF 56nF 68nF 100nF 120nF 150nF 220nF 270nF 330nF 470nF 680nF 1 F 2.2 F 3.3 F 10 F 22 F75【 南京南山半导体有限公司 — 贴片电容选型资料】ItemX7R Medium-voltage MLCCDielectric 1808 1812 2225 Size Rated 100 200 5001000 2000 3000 4000 100 200 500 1000 2000 3000 4000 100 200 500 1000 2000 3000 4000 5000 /250 /250 Volatage(V) /250 Capacitance 100PF 150PF 330PF 470PF 680PF 1000PF 1nF 2.2nF 3.3nF 4.7nF 6.8nF 10nF 12nF 15nF 22nF 27nF 33nF 39nF 47nF 56nF 68nF 100nF 120nF 150nF 220nF 270nF 330nF 470nF 680nF 1 F 2.2 F 3.3. F 10 F 22 F76【 南京南山半导体有限公司 — 贴片电容选型资料】MULTILAYER CHIP CERAMIC CAPACITORY5V 0603 (V) 100 100 0805 200 250 100 1206 200 250 100 1210 200 250 100 1812 200 250 100 2225 200 2501000PF 1.5nF 2.2nF 3.3nF 4.7nF 6.8nF 10nF 12nF 15nF 22nF 27nF 33nF 39nF 47nF 56nF 68nF 100nF 150nF 220nF 270nF 330nF 390nF 470nF 680nF 820nF 1 F 2.2 3.3 10 F F F77【 南京南山半导体有限公司 — 贴片电容选型资料】ItemY5V Medium-voltage MLCC 1210 100 200 250 100 1812 200 250 100 2225 200 250Dielectric 0603 0508 1206 Size Rated Volatage(V) 100 100 200 250 100 200 250 Capacitance 1000PF 1.5nF 2.2nF 3.3nF 4.7nF 6.8nF 10nF 12nF 15nF 22nF 27nF 33nF 39nF 47nF 56nF 68nF 100nF 150nF 220nF 270nF 330nF 390nF 470nF 680nF 820nF 1 2.2 3.3 10 F F F F78【 南京南山半导体有限公司 — 贴片电容选型资料】MULTILAYER CHIP CERAMIC CAPACITORCOG1-551251. 2. 3. 2 4. , , , , , 105.3 4 :HP4278A 1. 2. 5 (D.F.) 3. HP4284 25 5 :30% 75% 1.0 0.2V C<1000PF,1.0 0.1MHz; C 1000PF,1.0 0.1KHZ :10( :SF2511) >500V6I.R. 500V: , 60 5>1 5 7 >1 2 >1 21000V 1000V 2000V 2000V50mA 50mA 10mA 150+0/-10 60 55S 5S 5S824 2 -55 125 25975235 5 5 2 0.5 150+0/-10 5% 0.5PF, 10 1 D.F. 24 2 265 5 24 2 25 2.5mm/ : 25 2.5mm/ 60 524510I.R.1 2100 170120 2001 179【 南京南山半导体有限公司 — 贴片电容选型资料】Middle and high Voltage COG MLCC reliability test methodNumber 1 Item Operating Temperature Range Appearance -55 Standard 125 Test Method21.Good ceramic body color continuity. 2.The chips have no visual damages and must be very smooth. 3.No exposed innerelectrode, no cracks or holes. 4.The outer electrode should have no cracks, holes, damages or surface oxidation. 5.Outer electrode no prolongation or the prolongation is less than half of that of the termination width. Within the specified dimensions Within the specified toleranceCr 5PF 0.56% -4 5PF Cr 50PF 1.5[(150/Cr)+7] 10 Cr 50PF 0.15%Check by using microscope10.3 4Dimensions Capacitance Dissipation Factor (DF) Insulation ResistanceUsing micrometer or vernier calipers Measuring Equipment:HP4278 capacitance meter,HP4284 capacitance, Measuring Conditions: 1.Measuring Temperature:25 5 .Humidity: 30%~75%. 2.Measuring Voltage:1.0 0.2V. 3.Measuring Frequency:C<1000PF 1.0 0.1MHz C 1000PF 1.0 0.1KHz Measuring Equipment:Insulation resistance meter (such as Sf2511 insulation resistance). Measuring Method:Must measure at rated voltage, and if Ur>500V,then just use 500V,measure the IR within 60 1 seconds. Ur Max. Current Measuring Time 1000V 1000V 2000V 2000V 50mA 50mA 10mA 5S 5S 5S56C<10nF,IR 5 10 C>10nF,IR CR 500S10Withstanding Voltage 7Requirement >1.5Ur >1.2Ur >1.2Ur8Must meet the capacitor Capacitance temperature coefficient Temperature requirements within the Characteristics operating temperature range. Solderability Tin coverage 75% should be of the outer electrode covered by Tin Appearance Cap. Change ratio No defects visible 5% or 0.5PF whichever is bigger Same as original standard Same as original standardFirst, pre-heat: heat treat 60 5 minutes at 150+0/-10 , then set it for 24 2 hours at room temperature. Measure the capacitance at 55~125 or 55~85 , the capacitance change ratio comparing to that of 25 must be within the specified range. Dip the capacitor into ethanol or colophony solution, and then dip it into 235 5 eutectic solder solution for 2 0.5 seconds. Dipping speed: 25 2.5mm/second. First pre-heat: heat treat for 60 5 minutes at 150+0/-10 , then set it for 24 2 hours at room temperature. Then pre-heat the capacitance according to the following chart. Dip the capacitor into 265 5 eutectic solder solution for 10 1 seconds. Then set it for 24 2 hours at room temperature, then measure. Dipping speed: 25 2.5mm/second. Preheat conditions: Stage Temperature Time 1 2 100 170 120 200 1minutes 1minutes9 Resistance to Soldering10DFIR80【 南京南山半导体有限公司 — 贴片电容选型资料】MULTILAYER CHIP CERAMIC CAPACITOR1 10N11 10N,10 1 :1.0mm/ 11.5mm 10 D.F. 12 55Hz10 55Hz 10Hz 2 6 123 420 mmmm3mm mm mm mmmm150+0/-10 14 24 260 524 281【 南京南山半导体有限公司 — 贴片电容选型资料】NumberItem Adhesive Strength of TerminationStandard No removal of the termination or other defect shall occurTest Method Solder the capacitor to the test jig (glass epoxy resin board) shown in Fig.1 using a eutectic solder.Then apply a 10N force inthe direction shown as the arrowhead.The soldering shall be done either with an iron or using the reflow method and shall be conducted with care so that the soldering is uniform and free of defects such as heat shock,etc.11Fig.1 Vibration Resistance10N,10 1s Speed:1.0mm/s Glss epoxy resin board12Appearance No defects or Solder the capacitor to the test jig (glass epoxy resin abnormities board). The capacitor should be subjected to a simple harmonic motion having a total amplitude of 1.5mm, the Capacitance Within the frequency being varied uniformly between the specified approximate limits of 10 and 55Hz, shall be traversed tolerance range (from 10 Hz to 55 Hz then 10 Hz again) in approximately 1 minute.This motion shall be applied for a period of 2 DF Same as hours in each 3 mutually perpendicular directions original (total is 6 hours). standardFig.2 Bending Resistance No cracks or other defects shall occur Solder the capacitor to the test jig (glass epoxy resin board) shown in Fig.3 using a eutectic solder. Then apply a force in the direction shown in Fig.4. The soldering shall be done either with an iron or using the reflow method and shall be conducted with care so that the soldering is uniform and free of defects such as heat shock, etc. mmmm13mmmm mmmmTemperature Cycle 14Appearance No defects or abnormitiesPre-treatment: Heat-treat the capacitor for 60 5 minutes at 150+0/-10 , then set it for 24 2 hours at room temperature. Perform five cycles according to the four heat treatments listed in the following table. Set it for 24 2 hours at room temperature, the measure.82【 南京南山半导体有限公司 — 贴片电容选型资料】MULTILAYER CHIP CERAMIC CAPACITOR2.5% 0.25PF, min. 14 D.F. I.R. 10000M 1 2 3 4 2 3 30 2 30 2 3 3 3 34029095 24 2500+24/-05% 0.5PF, 15 ( ) D.F. I.R. 10000M1.5 50mA ( 5% 0.5PF, 16 .) >2000V100012 24 21.2D.F. I.R. 10000M83【 南京南山半导体有限公司 — 贴片电容选型资料】NumberItems Temperature CycleStandard Cap. Change ratio 2.5% or 0.25PF whichever is larger Same as original standard More than 10000M Heat-treatment:Test MethodD.F. 14 I.R.Stage Temperature Time 1 lowest operating temperature 3 30 2 2 Room Temperature 3 Highes operating temperature 2 30 4 Room Temperature 2min. 3 3 3 3Humidity Steady State 15AppearanceNo defects or abnormities 5% or 0.5PF whichever is larger Same as original standard More than 10000M No defects or abnormities 5% or 0.5PF (whichever is larger) Same as original standard More than 10000MSet the capacitor for 500+24/-0 hours at the condition of 40 2 and 90-95% humidity. Then remove and set it for 24 2 hours at room temperature, then measure.Cap. Change ratioD.F.I.R. Life Test AppearanceCap. Change ratio 16Apply 1.5 times rated voltage to the capacitor for 1000 12 hours at the upper temperature limits, the charging current should be less than 50mA. Remove and set it for 24 2 hours at room temperature, then measure.(If Ur>2000V,apply 1.2times Ur to test)D.F.I.R.84【 南京南山半导体有限公司 — 贴片电容选型资料】MULTILAYER CHIP CERAMIC CAPACITORX7R1-551251. 2. 3. 2 4. , , , , , 105.3 4 : HP4278A HP42845(D.F.)25010-41.255:30% 75% 2. 3. : :1.0 :1.0 0.2V 0.1KHz ( :SF2511 ) >500V , 60 56I.R.C 25nF,IR 10000M C>25nF,R C 500S 500V:>1 5 7 >1 2 >1 21000V 1000V 2000V 2000V50mA 50mA 10mA5S 5S 5S150+0/-10 24 8 25 -55 125 2605235 9 75 245 5 25 2.5mm/ 2 0.5585【 南京南山半导体有限公司 — 贴片电容选型资料】General X7R MLCC reliability test methodNumber 1 Item Operating Temperature Range Appearance -55 Standard 125 Test Method21.Good ceramic body color continuity. 2.The chips have no visualdamages and must be very smooth. 3.No exposed inner- electrode, no cracks or holes. 4.The outer electrode should have no cracks, holes, damages or surface oxidation. 5.Outer electrode no prolongation or the prolongation is less than half of the termination width. Within the specified dimensions Within the specified tolerance 250 10-4Check by using microscope10 .3 4Dimensions Capacitance Dissipation Factor (DF)5Using micrometer or vernier calipers Measuring Equipments: HP4278 capacitance meter, HP4284 capacitance, Measuring Conditions: 1.Measuring Temperature: 25 5 . Humidity: 30% 75%. 2.Measuring Voltage: 1.0 0.2V. 3.Measuring Frequency:1.0 0.1KHz Measuring Equipment: Insulation resistance meter (such as Sf2511 insulation resistance). Measuring Method: Must measure at rated voltage, and measure the IR within 60 1 seconds. Ur 1000V 1000V 2000V Max. Current Measuring Time 50mA 50mA 10mA 5S 5S 5SInsulation Resistance 6C 25nF,IR 10000M C>25nF,R C 500SWithstanding Voltage 7Requirement >1.5Ur >1.2Ur >1.2Ur2000V8Capacitance Temperature CharacteristicsMust meet the capacitor character temperature coefficient requirements within the operating temperature range. 75% of the outer electrode should be covered by TinFirst, pre-heat: heat treat 60 5 minutes at 150+0/-10 ,then set it for 24 2 hours at room temperature. Measure the capacitance at -55 125 ,the capacitance change ratio comparing to that of 25 must be within the specified range. Dip the capacitor into ethanol or colophony solution,and then dip it into 245 5 eutectic solder solution for 2 0.5 seconds. Dipping speed:25 2.5mm/second.Solderability 986【 南京南山半导体有限公司 — 贴片电容选型资料】MULTILAYER CHIP CERAMIC CAPACITOR150+0/-10 10% D.F. 10 I.R. 25 : 10 1 24 2 26560 5 24522.5mm/1 2100 170120 2001 1110N11 10N,10 1 :1.0mm/ 11.5mm 10 D.F. 55Hz 55Hz 10Hz 1 2 12 6 1023 13 ( ) 487【 南京南山半导体有限公司 — 贴片电容选型资料】NumberItemStandardTest Method First pre-heat: heat treat for 60 5 minutes at 150+0/-10 , then set it for 24 2 hours at room temperature. Then pre-heat the capacitance according to the following chart. Dip the capacitor into 265 5 eutectic solder solution for 10 1s. Then set it for 24 2 hours at room temperature, then measure. Dipping speed: 25 2.5mm/second. Preheat conditions: Stage Temperature Time 1 2 100 170 120 200 1minute 1minuteResistance to Appearance No defects visible Soldering Cap. Change Within 10% ratio DF 10 IR Same as original spec. Same as original spec.Adhesive Strength of TerminationNo removal of the terminations or other defect shall occur11Solder the capacitor to the test jig (glass epoxy resin board) shown in Fig.1 using a eutectic solder. Then apply a 10N force in the direction shown as the arrowhead. The soldering shall be done either with an iron or using the reflow method and shall be conducted with care so that the soldering is uniform and free of defects such as heat shock, etc. 10N,10 1s Speed:1.0mm/s Glss epoxy resinboardFig.1 Resistance to Soldering Appearance No defects visible or abnormities Capacitance Within the specified tolerance range D.F. 12 Same as original spec.Solder the capacitor to the test jig (glass epoxy resin board). The capacitor should be subjected to a simple harmonic motion having a total amplitude of 1.5mm, the frequency being varied uniformly between the approximate limits of 10 and 55Hz, shall be traversed (from 10 Hz to 55 Hz then 10 Hz again) in approximately 1 minute. This motion shall be applied for a period of 2 hours in each 3 mutually perpendicular directions (total is 6 hours).Fig.2 Bending Resistance No cracks or other defects shall occur Solder the capacitor to the test jig (glass epoxy resin board) shown in Fig.3 using a eutectic solder. Then apply a force in the direction shown as Fig.4. The soldering shall be done either with an iron or using the reflow method and shall be conducted with care so that the soldering is uniform and free of defects such as heat shock, etc.1388【 南京南山半导体有限公司 — 贴片电容选型资料】MULTILAYER CHIP CERAMIC CAPACITOR20 mmmmmm13mmmmmmmmmin. 20% 1 2 14 D.F. I.R. 3 4 2 3 30 2 30 2 3 3 3 340 20% 15 ( ) D.F. I.R.29095 48 2500+24/-01.5 20% .) 16 D.F. I.R 50mA ( >2000V100012 24 21.289【 南京南山半导体有限公司 — 贴片电容选型资料】NumberItem Bending ResistanceStandardTest Methodmmmmmm13mm mmmmTemperature CycleAppearanceNo defects or abnormities 20%Cap. Change Within ratio 14Stage Temperature Time min. 1 Min. Operating Temperature 3 30 3 2 Room Temperature 2 3 3 Max. Operating Temperature 2 30 3 4 Room Temperature 2 3D.F.Same as original Specification Same as original Specification No defects or abnormities 20% Set the capacitor for 500+24/-0 hours at the condition of 40 2 and 90-95% humidity. Then remove and set it for 48 2 hours at room temperature, then measure.I.R.Humidity Steady StateAppearanceCap. Change within ratio D.F.15 I.R. Life Test AppearanceSame as original Specification Same as original Specification No defects or abnonrmities 20% Apply 1.5 times rated voltage to the capacitor for 1000 12 hours at the upper temperature limits, the charging current should be less than 50mA. Remove and set it for 24 2 hours at room temperature, then measure.(If Ur>2000V,apply 1.2Ur to test.)Cap. Change within ratio 16 D.F.Same as original specification Same as original specificationI.R.90【 南京南山半导体有限公司 — 贴片电容选型资料】MULTILAYER CHIP CERAMIC CAPACITORY5V1-25~851. 2. 3. 2 4. 5. , , , , ,103 4 : HP4278A 1. 5 (D.F.) 500 10-4HP4284 25 5 75% 0.2V 0.1kHz:30% 2. 3. : :1.0 :1.06I.R.C 25nF,IR 40000M C>25nF,R C 500S( : ,: SF2511 60 5)7>300V >400V >500V100V 200V 250V50mA 50mA 50mA5S 5S 5S150+0/-10 8 24 -25 85 2605 25975235 25 0.52455 25 2.5mm/91【 南京南山半导体有限公司 — 贴片电容选型资料】General Y5V MLCC reliability test methodNumber 1 Item Operating Temperature Range Appearance -25 85 Standard Test Method21.Good ceramic body color continuity. 2.The chips have no visualdamages and must be very smooth. 3.No exposed inner- electrode, no cracks or holes. 4.The outer electrode should have no cracks, holes, damages or surface oxidation. 5.Outer electrode no prolongation or the prolongation is less than half of that of the termination width. Within the specified dimensions Within the specified tolerance 500 10-4Check by using microscope10.3 4Dimensions Capacitance) Dissipation Factor (DF)Using micrometer or vernier calipers Measuring Equipments: HP4278 capacitance meter, HP4284 capacitance, Measuring Conditions: 1.Measuring Temperature: 25 5 . Humidity: 30% 75%. 2.Measuring Voltage: 1.0 0.2V. 3.Measuring Frequency: 1.0 0.1KHz Measuring Equipment: Insulation resistance meter (such as Sf2511 insulation resistance). Measuring Method: Must measure at rated voltage, and measure the IR within 60 5seconds. Ur 1000V 1000V 2000V Max. Current Measuring Time 50mA 50mA 10mA 5S 5S 5S5Insulation Resistance 6C 25nF,IR 40000M C>25nF,R C 500SWithstanding Voltage 7Requirement >1.5Ur >1.2Ur >1.2Ur2000VCapacitance Temperature Characteristics 8Must meet the capacitor temperature coefficient requirements within the operating temperature range.First, pre-heat: heat treat 60 5 minutes at 150+0/-10 , then set it for 24 2 hours at room temperature. Measure the capacitance at 55 125 or 55 85 ,the capacitance change ratio comparing to that of 25 must be within the specified range. Dip the capacitor into ethanol or colophony solution,and then dip it into 235 5 (or 245 5 leadless eutectic solder solution) eutectic solder solution hanging lead for 2 0.5seconds. Dipping speed: 25 2.5mm/second.Solderability 975% of the outer electrode should be covered by Tin92【 南京南山半导体有限公司 — 贴片电容选型资料】MULTILAYER CHIP CERAMIC CAPACITOR150+0/-10 30% D.F. I.R. 10 60 5 24 22655 24 2 25 2.5mm/ :1011 2100 170120 200 11 110N11 10N,10 1 :1.0mm/ 11.5mm D.F. 10 55Hz 12 55Hz 10Hz 1 2 6 1023 ( 13 ) 493【 南京南山半导体有限公司 — 贴片电容选型资料】NumberItemStandardTest Method First pre-heat: heat treat for 60 5 minutes at 150+0/-10 , then set it for 24 2 hours at room temperature. Then pre-heat the capacitance according to the following chart. Dip the capacitor into 265 5 eutectic solder solution for 10 1s. Then set it for 24 2 hours at room temperature, then measure. Dipping speed: 25 2.5mm/second. Preheat conditions: Stage Temperature Time 1 2 100 170 120 200 1minute 1minuteResistance to Appearance No defects visible Soldering Cap. Change Z5U, Y5V: within ratio DF 10 IR30%Same as original spec. Same as original spec.Adhesive Strength of TerminationNo removal of the terminations or other defects shall occur11Solder the capacitor to the test jig (glass epoxy resin board) shown in Fig.1 using a eutectic solder. Then apply a 10N force in the direction shown as the arrowhead. The soldering shall be done either with an iron or using the reflow method and shall be conducted with care so that the soldering is uniform and free of defects such as heat shock, etc. 10N,10 1s Speed:1.0mm/s Glss epoxy resinboardFig.1 Resistance to Soldering Appearance No defects visible or abnormities Capacitance Within the specified tolerance range D.F. 12 Same as original spec.Solder the capacitor to the test jig (glass epoxy resin board). The capacitor should be subjected to a simple harmonic motion having a total amplitude of 1.5mm, the frequency being varied uniformly between the approximate limits of 10 and 55Hz, shall be traversed (from 10 Hz to 55 Hz then 10 Hz again) in approximately 1 minute. This motion shall be applied for a period of 2 hours in each 3 mutually perpendicular directions (total is 6 hours).Fig.2 Bending Resistance No cracks or other defects shall occur Solder the capacitor to the test jig (glass epoxy resin board) shown in Fig.3 using a eutectic solder. Then apply a force in the direction shown as Fig.4. The soldering shall be done either with an iron or using the reflow method and shall be conducted with care so that the soldering is uniform and free of defects such as heat shock, etc.1394【 南京南山半导体有限公司 — 贴片电容选型资料】MULTILAYER CHIP CERAMIC CAPACITOR20 mm mmmm13mm mmmmmm30%min. 1 2 3 4 3 2 30 2 30 2 3 3 3 3D.F. 14 I.R.40 30%29095 48 2500+24/-015()D.F. I.R.30% 16 D.F. I.R 48 21.5 50mA10001295【 南京南山半导体有限公司 — 贴片电容选型资料】NumberItem Bending ResistanceStandardTest Methodmmmm13mmmmmmmmTemperature CycleAppearanceNo defects or abnonrmities 2.5Cap. Change Within ratio 14Stage Temperature Time 30 1 Min. Operating Temperature 3 2 Room Temperature 2 3 Max. Operating Temperature 2 30 4 Room Temperature 2min. 3 3 3 3D.F.Same as original spec. Same as original spec. No defects or abnonrmities Set the capacitor for 500+24/-0 hours at the condition of 40 2 and 90-95% humidity. Then remove and set it for 24 2 hours at room temperature, then measure.I.R.Humidity Steady State 15AppearanceCap. Change within 30% ratio Same as D.F. original spec. I.R. Same as original spec. No defects or abnonrmities 30%Life TestAppearanceCap. Change within ratio 16 D.F.Same as original spec. Same as original spec.Apply 1.5 times rated voltage to the capacitor for 1000 12 hours at the upper temperature limits, the charging current should be less than 50mA. Remove and set it for 24 2 hours at room temperature, then measure.I.R.96。
中高压铝电解电容器用阳极箔腐蚀工艺的研究
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高压电容补偿功率计算公式
高压电容补偿功率计算公式在电力系统中,高压电容补偿是一种常见的电力补偿方式,它可以通过连接电容器来提高电力系统的功率因数,减少无功功率损耗,提高系统的稳定性和效率。
高压电容补偿功率计算公式是用来计算电容器的额定容量和连接方式的重要工具,下面我们将详细介绍高压电容补偿功率计算公式的相关知识。
1. 高压电容补偿功率计算公式的基本原理。
在电力系统中,功率因数是衡量系统电能利用效率的重要指标,它反映了有用功率和无用功率(即无功功率)之间的比例关系。
功率因数越高,系统的电能利用效率就越高,反之则越低。
而高压电容补偿就是通过连接电容器来补偿系统中的无功功率,从而提高系统的功率因数。
高压电容补偿功率计算公式的基本原理是根据电力系统中的电压、电流和功率因数之间的关系来计算电容器的额定容量和连接方式。
根据电力系统的特点和要求,可以通过计算得到最佳的电容器容量和连接方式,从而实现对系统功率因数的有效补偿。
2. 高压电容补偿功率计算公式的具体内容。
高压电容补偿功率计算公式主要包括以下几个方面的内容:(1)无功功率的计算公式。
在电力系统中,无功功率是衡量系统无效功率的重要指标,它反映了系统中的电容器需要补偿的无功功率大小。
无功功率的计算公式通常是根据系统的电压、电流和功率因数之间的关系来计算得到的,具体公式如下:Q = U I sin(φ)。
其中,Q表示无功功率,U表示电压,I表示电流,φ表示功率因数。
(2)电容器的额定容量计算公式。
在高压电容补偿中,电容器的额定容量是衡量电容器补偿能力的重要指标,它反映了电容器对系统无功功率的补偿能力大小。
电容器的额定容量计算公式通常是根据系统的无功功率和电压之间的关系来计算得到的,具体公式如下:C = Q / (2 π f U^2)。
其中,C表示电容器的额定容量,Q表示无功功率,f表示系统的频率,U表示电压。
(3)电容器的连接方式计算公式。
在高压电容补偿中,电容器的连接方式是衡量电容器使用效率的重要指标,它反映了电容器在系统中的连接方式和使用效果。
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中高压电容器HIGH VOLTAGE MLCC
中高压多层片状陶瓷电容器是在多层片状陶瓷电容器的工艺技术、设备基础上,通过采用特殊工艺制作的一种具有良好高压可靠性的产品,该产品适合于表面贴装,适合于多种直流高压线路,可以有效的改善电子线路的性能。
●应用范围
※模拟或数字调制解调器。
※局域网/广域网接口界面。
※日光灯启动辉器照明电路。
※倍压电器。
※直流变送器。
※背光源驱动电路。
Middle & high voltage MLCC is a kind of special design 、special technology MLCC that bases on the technology of general MLCC. This kind of MLCC has stable high voltage reliability and suitable to SMT. Middle & high MLCC is widely applicable for many direct high voltage circuits in which it can improve the performance of the circuit.
●APPLICATIONS
※Analog & Digital Modems
※LAN/WAN Interface
※Lighting Ballast Circuits
※V oltage Multipliers
※DC-DC Converters
※Back-lighting Inverters
容量范围及其电压
单位/unit: pF
尺寸规格 容量范围Capacitance
Size Code
工作电压 Rated V oltage
NPO X7R Y5V 100V
0.5~820 150~10,000 2,200~68,000 200V 0.5~470 150~6,800 ---------- 0603
250V 0.5~470 150~6,800 ---------- 100V 0.5~1,500 150~33,000 10,000~100,000 200V
0.1~1,500 150~22,000 10,000~56,000 250V 0.1~1,500 150~22,000 10,000~56,000
500V 0.1~560 150~10,000 --------- 0805
1000V 0.1~100 --------- --------- 100V 0.5~3,300 150~100,000 15,000~330,000 200V
0.1~2,700 150~47,000 10,000~150,000 250V 0.1~2,700 150~33,000 10,000~150,000
500V 0.1~1,500 150~22,000 ---------- 1000V 0.1~1,000 150~5,600 ---------- 1206
2000V 0.1~270 150~1,500 ----------- 100V 1.0~4,700 150~220,000 10,000~820,000 200V
1.0~3,300 150~100,000 10,000~390,000 250V 1.0~3,300 150~82,000 10,000~390,000
500V 1.0~2,000 150~33,000 ---------- 1000V 1.0~820 150~10,000 ----------- 1210
2000V 1.0~470 150~6,800 ----------- 100V 2.0~4,700 150~220,000 150,000~1,000,000 200V 2.0~3,300 150~100,000 10,000~390,000 250V 2.0~3,300 150~82,000 10,000~390,000
500V
2.0~1,800 150~39,000 -------- 1000V 2.0~820 150~10,000 --------- 2000V 2.0~470 150~6,800 --------- 3000V 2.0~470 150~2,200 --------- 4000V 2.0~56 150~1,000 ---------- 1808
5000V
2.0~27
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容量范围及其电压
单位/unit: pF
尺寸规格 容量范围Capacitance (PF )
Size Code
工作电压 Rated V oltage
NPO X7R Y5V
100V 3.0~180 220~10,000 150~330,000 150,000~1,500,000 200V 3.0~5,600 150~150,000 100,000~470,000 250V
3.0~5,600 150~120,000 100,000~470,000
500V 3.0~3,900 150~100,000 ---------- 1000V 3.0~1,200 150~27,000 ---------- 2000V 3.0~680 150~10,000 ---------- 3000V 3.0~470 150~2,200 ---------- 4000V 3.0~220 150~1,500 --------- 1812
5000V 3.0~56 ---------- ---------- 100V 5.0~27,000 150~1,000,000 250,000~3,300,000 200V 5.0~12,000 150~470,000 22,000~680,000 250V 5.0~12,000 150~470,000 22,000~680,000
500V
5.0~6,800 150~330,000 ---------- 1000V 5.0~2,200 150~56,000 ---------- 2000V 5.0~1,000 150~27,000 ---------- 3000V 5.0~680 150~3,900 ---------- 4000V 5.0~560 150~3,300 ---------- 2225
5000V
5.0~100
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备注:可根据客户的特殊要求设计符合客户需求的产品。
Note :We can design according to customer special requirements。