si2302中文资料_数据手册_参数

Unit
V
A
W oC oC/W
- 1-
2018-5-7
SI2302
ELECTRICAL CHARACTERISTICS
Parameter
Symbol
Test Condition
Static
Drain-Source Breakdown Voltage Drain-Source On-State Resistance 1)
Vdd
Rl
Vin
D
Vout
Vgs
Rgen
G
S
td(on)
VOUT
VIN
10%
ton
toff
tr
td(off)
tf
90%
INVERTED
10%
90% 10%
90%
50%
50%
PULSE WIDTH
Figure 1:Switching Test Circuit
Figure 2:Switching Waveforms
SOT-23
D
G
S
REF.
A B C D E
F
Millimeter
Min. Max.
2.80 3.00
2.30 2.50
1.20 1.40
0.30 0.50
0
0.10
0.45 0.55
REF.
G H K J L
M
Millimeter
Min. Max. 1.80 2.00 0.90 1.1 0.10 0.20 0.35 0.70 0.92 0.98
TA = 25o TA = 75oC
Symbol
VDS VGS ID IDM
PD
TJ, Tstg
RthJA
Limit
20 ±10 3 12 1.25 0.8 -55 to 150 100 166
Notes 1) Pulse width limited by maximum junction temperature. 2) Surface Mounted on FR4 Board, t v 5 sec. 3) Surface Mounted on FR4 Board.
ID- Drain Current (A)
Vds Drain-Source Voltage (V)
Figure 5 Output Characteristics
ID- Drain Current (A)
Figure 6 Drain-Source On-Resistance
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2018-5-7
SI2302
Maximum Power Dissipation 2)
Operating Junction and Storage Temperature Range Junction-to-Ambient Thermal Resistance (PCB mounted) 2) Junction-to-Ambient Thermal Resistance (PCB mounted) 3)
Min.
Typ.
Miax.
Unit
20
V
30
45
mΩ
37
59
0.45
1.5
V
1
uA 10
±100
nA
10
S
5.4
0.65
nC
1.6
12
36 ns
34
10
340
115
pF
33
1.6
A
1.2
V
- 2-
2018-5-7
SI2302
Typical ElectricalL and Thermal Characteristics
Is- Reverse Drain Current (A)
Qg Gate Charge (nC)
Figure 11 Gate Charge
Vsd Source-Drain Voltage (V)
Figure 12 Source- Drain Diode Forward
- 4-
2018-5-7
Vgs Gate-Source Voltage (V)
r(t),Normalized Effective Transient Thermal Impedance
- 5-
2018-5-7
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Qg Qgs Qgd td(on) tr td(off)
tf
VDS = 10V, I D = 3A VGS = 4.5V
VDD = 10V, RL=5.5 Ω ID ^ 3A,VGEN = 4.5V
RG = 6Ω
Input Capacitance Output Capacitance Reverse Transfer Capacitance
SI2302
20V N-Channel Enhancement Mode MOSFET
VDS= 20V RDS(ON), Vgs@ 4.5V, Ids@ 3A 45m Ω RDS(ON), Vgs@ 2.5V, Ids@ 2.5A 59mΩ
Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions
Normalized On-Resistance
ID- Drain Current (A)
Rdson On-Resistance(mΩ)
Vgs Gate-Source Voltage (V)
Figure 7 Transfer Characteristics
TJ-Junction Temperature(℃)
Figure 8 Drain-Source On-Resistance
C Capacitance (pF)
Vgs Gate-Source Voltage (V)
Figure 9 Rdson vs Vgs
Vds Drain-Source Voltage (V)
Figure 10 Capacitance vs Vds
ID- Drain Current (A)
SI2302
Vds Drain-Source Voltage (V)
Figure 13 Safe Operation Area
Square Wave Pluse Duration(sec)
Figure 14 Normalized Maximum Transient Thermal Impedance
VGS(th) IDSS IGSS gfs
VDS =VGS, ID = 250uA VDS = 16V, V GS = 0V
VDS = 16V, V GS = 0V TJ=55oC
VGS = ± 10V, VDS = 0V VDS = 5V, ID = 3A
Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time
0° 10°
Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted)
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 1)
BVDSS VGS = 0V, ID = 250uA
RDS(on)
VGS = 4.5V, ID = 3A VGS = 2.5V, ID = 2.5A
Gate Threshold Voltage
Zero Gate Voltage Drain Current 0
Gate Body Leakage Forward Transconductance 1) Dynamic
Ciss Coss Crss
VDS = 10V, VGS = 0V f = 1.0 MHz
Source-Drain Diode
Max. Diode Forward
IS
Diode Forward Voltage
VSD IS = 1.0A, V GS = 0V
1) Pulse test: pulse width <= 300us, duty cycle<= 2%
ID- Drain Current (A）
PD Power(W)
TJ-Junction Temperature(℃)
Figure 3 Power Dissipation
TJ-Junction Temperature(℃)
Figure 4 Drain Current
Rdson On-Resistance(mΩ)