BAT54 打标KL1肖特基二极管选型手册
BAT54WS贴片肖特基二极管规格书
2.75(0.108) 2.30(0.091)
1.80(0.071) 1.60(0.063)
2.75(0.108) 2.30(0.091)
1.80(0.071) 1.60(0.063)
MECHANICAL DATA
0.4(0.016) .25(0.010) .177(.007) .089(.003) 1.00(.040) 0.80(.031) 0.1(0.004) MIN .305(0.012) .295(0.010)
.72(0.028) .69(0.027)
.08(.003) MIN
Case: Molded plastic body Terminals: Plated leads solderable per MIL-STD-750, Method 2026 Polarity: Polarity symbols marked on case Marking: L9
INSTANTANEOUS FORWARD CURRENT-IF(A)
FIG. 1- MAX.FORWARD VOLTAGE DROP CHARACTERISTICS(PER LEG)
1 1
FIG. 2-TYPICAL VALUES OF REVERSE CURRENT VS REVERSE VOLTAGE (PER LEG)
SYMBOLS SYMBOLS
LIMITS 21 100 200 300 600 200 625 125 -65 to +150 30
UNITS V mA mA mA mA mW K/W C C V
VR IO IFM IFRM IFSM Pd RΘJA Tj TSTG VRM
Min. 30
Typ.
肖特基二极管LBAT54HT1
Schottky Barrier DiodesANODE1CATHODEMAXIMUM RATINGS (T J =125°C unless otherwise noted )RatingSymbol Value Unit Reverse VoltageV R30VTHERMAL C HARACTERISTICSCharacteristicSymbol Max Unit Total Device Dissipation FR-5 Board,*P D 200mW T A = 25°CDerate above 25°C1.57mW/°C Thermal Resistance Junction to Ambient R θJA 635°C/W Junction and Storage TemperatureT J ,T stg150°C* FR-4 Minimum Pad12L BAT54HT1These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward volt-age reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited.•Extremely Fast Switching Speed•Low Forward Voltage — 0.35 Volts (Typ) @ I F = 10 mAdc •Device Marking: JV ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (EACH DIODE)CharacteristicSymbol Min Typ Max Unit Reverse Breakdown Voltage (I R = 10 µA)V (BR)R 30——Volts Total Capacitance (V R = 1.0 V, f = 1.0 MHz)C T —7.610pF Reverse Leakage (V R = 25 V)I R —0.5 2.0µAdc Forward Voltage (I F = 0.1 mAdc)V F —0.220.24Vdc Forward Voltage (I F = 0.15 mAdc)V F —0.240.26Vdc Forward Voltage (I F = 0.15 mAdc, T j =-25°C)V F —0.330.35Vdc Forward Voltage (I F = 0.15 mAdc, T j =85°C)V F —0.160.18Vdc Forward Voltage (I F = 30 mAdc)V F —0.410.5Vdc Forward Voltage (I F = 100 mAdc)V F—0.52 1.0Vdc Reverse Recovery Time(I F = I R = 10 mAdc, I R(REC) = 1.0 mAdc, Figure 1)t rr —— 5.0ns Forward Voltage (I F = 1.0 mAdc)V F —0.290.32Vdc Forward Voltage (I F = 10 mAdc)V F —0.350.40Vdc Forward Current (DC)I F ——200mAdc Repetitive Peak Forward CurrentI FRM ——300mAdc Non–Repetitive Peak Forward Current (t < 1.0 s)I FSM——600mAdcSOD-323Pb-Free Package May be Available. The G.Suffix Denotes a Pb-Free Lead FinishDevice Package Shipping LBAT54HT1 SOD-3233000/Tape & Reel LBAT54HT1G SOD-3233000/Tape & ReelO DERING INFORMATIONNotes: 1.A 2.0k Ωvariable resistor adjusted for a Forward Current (I F ) of 10mA.2. Input pulse is adjusted so I R(peak)is equal to 10mA.3. t p » t rr+10 V2.0 k820Ω100µH0.1µFD U T0.1µF50ΩOUTPUTPULSE GENERATORt r50ΩINPUT SAMPLING OSCILLOSCOPEt p t10%90%I FI Rt rrti= 1.0 mAOUTPUT PULSE(I = I = 10 mA; MEASUREDat i = 1.0 mA)INPUT SIGNALI FVRLBAT54HT1V F , FORWARD VOLTAGE (VOLTS)Figure 2. Forward VoltageV R , REVERSE VOLTAGE (VOLTS)Figure 3. Leakage CurrentV R , REVERSE VOLTAGE (VOLTS)Figure 4. Total CapacitanceTYPICAL CHARACTERISTICS100101.00.10.00.10.20.30.40.50.61000100101.00.10.010.00151015202530I F , F O R W A R D C U R R E N T (m A )I R , R E V E R S E C U R R E N T (µA )14121086420051015202530C T , T O A T A L C A P A C I T A N C E (p F )Figure 1. Recovery Time Equivalent Test Circuit150°C125°C85°C25°C– 40°C–55°C–25°CHJSOD -323NOTES:1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.2. CONTROLLING DIMENSION: MILLIMETERSMIN MAX MIN MAX 1.60 1.800.0630.0711.15 1.350.0450.0530.80 1.000.0310.0390.250.400.0100.0160.15 REF0.006 REF 0.000.100.0000.0040.0890.1770.00350.00702.302.700.0910.106MILLIMETERS DIM AB C D E H J KINCHESLBAT54HT1PIN:1:CATHODE2:ANODE。
贴片肖特基二极管BAT54CSOT-23规格书推荐
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage V RRM V RWM V R 30
贴片肖特基二极管 bat54c sot-23规格书推荐 jiangsu changjiang electronics technology co., ltd sot-23 plastic-encapsulate diodes bat54/a/c/s schottky barrier diode features z extremely fast switching speed maximum ratings ( t a =25℃ unless otherwise noted ) parameter symbol value unit peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 30 v forward continuous current i fm 200 ma non-repetitive peak forward surge current @ t =8.3ms i fsm 600 ma repetitive peak forward current @ t≤1s,δ≤0.5 i frm 300 ma power dissipation p d 200 mw thermal resistance from junction to ambient rΘja 500℃/w junction temperature t j 125℃ storage temperature t stg -55~+150 ℃ electrical characteristics(t a =25℃ unless otherwise specified) parameter symbol min typ max unit test conditions reverse voltage v (br) 30 v i r =100μa forward voltage v f 0.24 v i f1=0.1ma 0.32 v i f2=1ma 0.40 v i f3=10ma 0.50 v i f4=30ma 1 v i f5=100ma reverse current i r 2 μa v r =25v diode capacitance c d 1
BAT54S BAT54肖特基二极管参数
℃
TJ
Operating Junction Temperature工作结温
-55 to +150
℃
电气特性：
符号
Parameter参数
Conditions测试条件
最小
最大
单位
VR
Breakdown Voltage击穿电压
IR30-Fra bibliotekVVF
Forward Voltage正向电压
IF = 0.1mA
IF = IR = 10mA, IRR = 1.0mA,
RL = 100Ω
-
5.0
nS
BAT54封装外型及引脚图
BAT54
BAT54A
BAT54C
BAT54S
BAT54FILM
BAT54AFILM
BAT54CFILM
BAT54SFILM
BAT54S BAT54肖特基二极管参数
来源：|时间：2010年05月02日
三端贴片肖特基二极管BAT54/BAT54A/BAT54C/BAT54S
特点：
极小传导损耗
开关损耗可以忽略不计
低正向压降
表面贴装器件
肖特基势垒二极管封装采用SOT-23
绝对最大额定值：
Symbol符号
Parameter参数
Value数值
Unit单位
VRRM
Maximum Repetitive Reverse Voltage最大重复反向电压
30
V
IF(AV)
Average Rectified Forward Current平均正向电流整流
200
mA
IFSM
SiC系列产品选型指南肖特基二极管和MOSFET说明书
Schottky Diodes and MOSFETsNovel SiC Products Selection GuideSpecifications are subject to change without notice.The data indicated herein describe types of components and shall not be considered as assured characteristics.The products listed in this catalog are not recommended for use in life support systems where a failure or malfunction of the component may directly threaten life or cause injury.The user of products in such applications shall assume all risks of such use and will agree to hold Bruckewell Technology Co LTD and all the companies whose products are represented in this catalog, harmless against all damages.© 2021 Bruckewell Technology Co LTD.All Rights Reserved.Specifications subject to change without notice.Schottky Diodes and MOSFETsIn the recent decades, the Silicon carbide (SiC), turned out to be an excellent semiconductor material. Composed of carbon and silicon, and used in power applications in which it showed excellent performance,far superior to those of silicon.Significant progress has been made in the field of the semiconductor industry, in which the technologies forthe processing of silicon carbide have become increasingly more sophisticated, and have produced semiconductor devices with excellent performance.In the facts those devices during the applications have shown a remarkable capacity to reduce losses and ahigh switching speed in comparison to that offered by silicon. The use of silicon carbide (SiC) as a semiconductor begins to expand into multiple applications and always proves to be more and more the candidate to replace silicon in the most important applications such as automotive and E-Bike motor control.For these reasons, Bruckewell Semi decided to launch the production of the SiC Products, including the SiC Schottky Diode and SiC MOSFET, support the 650V to 1200V, and give the opportunity to its customers totake advantage of the benefits that the products offer in the SiC high-voltage power applications.Present our SiC products line as belowSMD PackageAmp DFN3X3 DFN5X6 TO-277 DFN 8X8 TO-252(DPak) TO-263(D2Pak)4 CBR04P65D6 CBR06P65HL CBR06P65D8 CBR08P65HL CBR08P65D10 CBR10P65HM CBR10P65SCBR10120SCBR10P65HLCBR10P65DCBR10120D20 CBR20120S30 CBR30120H CBR30120S40DFN 3X3 is unique package and CBR10P65HM is first smallest SiC SBD Diode in the industry.TO-277 has same foot print with TO-252 (DPak), and has better thermal performance.Through Hole PackageAmp TO-220AC TO-220AB TO-247 TO-247 (Dual Die)4 CBR04P656 CBR06P658 CBR08P6510 CBR10P65CBR10120 CBR10120PCBR10120W20 CBR20P65CBR20120CBR20P65PCCBR20120PCBR20P65WCBR20120WCBR20P65WCCBR20120WC30 CBR30120W40 CBR40P65WC CBR40120WCSchottky Diodes and MOSFETsPart NomenclatureExample: CBR20P65PC CBR SiC Barrier RectifierCMS SiC MOSFET20 IF, Forward current, as 20AP65 Breakdown Voltage, as P65=650V, 120=1200VPC Package CodeBlank: TO-220AC-2LP: TO-220ABPC: TO-220AB, Dual Die D: TO-252-2L, DPAKW: TO-247-2LWC: TO-247-3L, Dual Die WU: TO-247-3L, Single Die S: TO-277A: SMA, B: SMB, C: SMC B: TO-263, D2PAKH: DFN5x6HM: DFN3x3HL: DFN8x8When the diodes are used simultaneously:ΔTj(diode1) = P(diode1) x Rth(j-c) (per diode) + P(diode2) x Rth(c)To evaluate the conduction losses use the following equation:P = 1.35 x IF(AV) + 0.144 x IF2(RMS)Schottky Diodes and MOSFETsComparison with industry supplier-TO-220AC/ABAmpBruckewellST-MicroInfineonTO-220ACTO-220ABTO-220ACTO-220ABTO-220AC TO-220AB2 IDH02G65C5IDH02G120C53 IDH03SG60C IDH03G65C5 4CBR04P65IDH04SG60C IDH04G65C55 IDH05SG60C IDH05G65C5 IDH05G120C56 CBR06P65 STPSC6TH13TI IDH06SG60C IDH06G65C58 CBR08P65STPSC8TH13TI STPSC8H065CIDH08SG60C IDH08G65C5 IDH08G120C5 9IDH09SG60C IDH09G65C510CBR10P65 CBR10120CBR10120PSTPSC10H065D STPSC10H12D STPSC10TH13TIIDH10SG60CIDH10G65C5 IDH10G120C512 STPSC12065 STPSC1206 STPSC12H065CIDH12SG60C IDH12G65C515 STPSC15H1216STPSC16H065C IDH16G65C5IDH16G120C520CBR20P65 CBR20120CBR20P65PC CBR20120PSTPSC20065D STPSC20H12DSTPSC20H065CIDH20G65C5 IDH20G120C5Note:The suffix C5 in the Infineon Parts means the CoolSiC™ 5G, others are CoolSiC™ 3GSchottky Diodes and MOSFETsComparison with Japan suppliers-TO-220AC/ABAmpBruckewell Rohm Toshiba TO-220AC TO-220AB TO-220AC ITO-220AC TO-220AC ITO-220AC4 CBR04P65 SCS304AP TRS4E65F TRS4A65F5 SCS205KG6 CBR06P65 SCS306APSCS206AGSCS206AM TRS6E65F TRS6A65F8 CBR08P65 SCS308APSCS208AGSCS208AM TRS8E65F TRS8A65F10 CBR10P65CBR10120 CBR10120PSCS310APSCS210AGSCS210KGSCS210AM TRS10E65F TRS10A65F12 SCS212AG SCS212AM15 SCS215AGSCS215KGSCS215AM20 CBR20P65CBR20120CBR20P65PCCBR20120PSCS220AGSCS220KGSCS220AMNote:The suffix of Rohm Parts means the breakdown voltage, A means 650V, K means 1200VSchottky Diodes and MOSFETsComparison with industry supplier-TO-247 Single/ Dual DieAmpBruckewellST-MicroInfineonTO-247 TO-247 DualTO-247TO-247 DualTO-247TO-247 Dual 10 CBR10120WIDW10G65C5 IDW10G120C5B 20 CBR20P65W CBR20120W CBR20P65WC CBR20120WC STPSC20065WSTPSC20H065CWIDW20G65C5IDW20G65C5B IDW20G120C5B12 IDW12G65C515IDW15G120C5B16 IDW16G65C524IDW24G65C5B 30 CBR30120WIDW30G65C5IDW30G120C5B 32IDW32G65C5B 40CBR40120WCSTPSC40065CWIDW40G65C5IDW40G65C5B IDW40G120C5BComparison with Japan suppliers-TO-247 Single/ Dual DieAmpBruckewellRohmFuji electricTO-247 TO-247 DualTO-247TO-247 Dual TO-247 TO-247 Dual10 CBR10120WSCS210KE2FDCY10S6515SCS215AE20 CBR20P65W CBR20120W CBR20P65WC CBR20120WCSCS220AESCS220AE2 SCS220KE2FDCY18S120 FDCY20C6525 FDCY25S6530 CBR30120WSCS230AE2 SCS230KE240 CBR40120WCSCS240AE2 SCS240KE2FDCY36C120 50FDCY50C65Schottky Diodes and MOSFETsProduct IO(A)VB min (V)VF typ(V)IR Max (uA)PackageNumber of Diodes CBR04P65 4 650 1.5 10 TO-220AC 1 CBR04P65D 4 650 1.5 10 DPAK (TO-252) 1 CBR06P65 6 650 1.5 10 TO-220AC 1 CBR06P65D 6 650 1.5 10 DPAK (TO-252) 1 CBR 06P65HL 6 650 1.5 10 DFN 8X8 1 CBR08P65 8 650 1.5 10 TO-220AC 1 CBR08P65D 8 650 1.5 10 DPAK (TO-252) 1 CBR08P65HL 8 650 1.5 10 DFN 8X8 1 CBR10P65 10 650 1.5 10 TO-220AC 1 CBR10P65D 10 650 1.5 10 DPAK (TO-252) 1 CBR10P65S 10 650 1.5 10 TO-277 1 CBR10P65HM 10 650 1.5 10 DFN3.3 1 CBR10P65HL 10 650 1.5 10 DFN8X8 1 CBR20P65PC 20 650 1.5 10 TO-220AB 2 CBR20P65 20 650 1.5 10 TO-220AC 1 CBR20P65W 20 650 1.5 10 TO-247 1 CBR20P65WC 20 650 1.5 10 TO-247 2 CBR40P65WC 40 650 1.5 10 TO-247 2 CBR10120 10 1200 1.5 10 TO-220AC 1 CBR10120P 10 1200 1.5 10 TO-220AB 1 CBR10120D 10 1200 1.5 10 DPAK (TO-252) 1 CBR10120S 10 1200 1.5 10 TO-277 1 CBR10120W 10 1200 1.5 10 TO-247 1 CBR20120WC 20 1200 1.5 10 TO-247 2 CBR20120W 20 1200 1.5 10 TO-247 1 CBR20120 20 1200 1.5 10 TO-220AC 1 CBR20120P 20 1200 1.5 10 TO-220AB 1 CBR20120PC 20 1200 1.5 10 TO-220AB 2 CBR20120S 20 1200 1.5 10 TO-277 1 CBR30120W 30 1200 1.5 10 TO-247 1 CBR30120S 30 1200 1.5 10 TO-277 1 CBR30120H 30 1200 1.5 10 DFN 5X6 1 CBR40120WC 4012001.510 TO-2472Schottky Diodes and MOSFETsDisclaimerALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Bruckewell Technology Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Bruckewell”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Bruckewell makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Bruckewell disclaims(i) Any and all liability arising out of the application or use of any product.(ii) Any and all liability, including without limitation special, consequential or incidental damages. (iii) Any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability.Statements regarding the suitability of products for certain types of applications are based on Bruckewell’s knowledge of typical requirements that are often placed on Bruckewell products in generic applications.Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time.Product specifications do not expand or otherwise modify Bruckewell’s terms and conditions of purchase, including but not limited to the warranty expressed therein.。
DIODES SOT523肖特基二极管BAT54T选型手册
May 2018
© Diodes Incorporated
CT, TOTAL CAPACITANCE (pF) PD, POWER DISSIPATION (mW)
12 10
8
6 4
2
0
0
5
10
15
20
25
30
VR, DC REVERSE VOLTAGE (V)
Fig. 3 Total Capacitance vs. Reverse Voltage
Solderable per MIL-STD-202, Method 208 Lead-Free Plating Polarity: See Diagrams Below Weight: 0.002 grams (Approximate)
Top View
BAT54T
BAT54AT
BAT54CT
BAT54ST
Ordering Information (Note 4)
Notes:
Part Number
Case
Packaging
BAT54T-7-F
SOT523
3,000/Tape & Reel
BAT54AT-7-F
SOT523
3,000/Tape & Reel
BAT54CT-7-F
SOT523
1
100
IF, INSTANTANEOUS FORWARD CURRENT (A)
10 0.1
1 0.01
0.1
0.001 0.01
0.0001 0
0.2
0.4
0.6
0.8
1.0
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
肖特基二极管型号大全及选择
肖特基二极管型号大全及选择
通过市场调查,不难发现采购到假冒翻新的二极管时有发生. 一些不法商家利用翻新件充当全新器件;或通过更改印字,以小芯片充当大芯片卖等等. ..后果很严重,有时甚至是危及生命安全. 最近充电宝事件,已广泛引起人们的关注和担心! 在这里,凌讯电子愿意为您解决困扰. 教您如何检验元器件的好坏!以肖特基二极管为例:
(一)看外观:
1. 印字: 现在肖特基二极管都是激光印字, 具有无毒,环保,字体清晰,永不磨损的特点. 油印的翻新机率大,有毒,不环保.建议不用.
2. 脚位: 标准器件脚长,都是有一定标准的.请参考资料. 如果脚偏短,有可能是二次打磨.建议不用.
3. 镀锡: 目前肖特基二极管分两种: 亮脚(国产较多)和粉脚(国外较多)各有优势. 亮脚上锡快,储存时间长; 粉脚上锡非常快,但易氧化.如果外观已氧化,建议不用.
(二)测试:
1. 芯片: 防止以小充大.尺寸是直观表现.
2. 参数: 正规厂家都是会提供参数的. 测试参数的准确性是非常重要的.是一个产品好坏的直观体现.。
TBAT54,LM(T肖特基二极管东芝最新资料
3
2016-05-12 Rev.1.0
TBAT54,TBAT54A,TBAT54C,TBAT54S
Package Dimensions
Unit: mm
Weight: 0.0125 g (typ.)
Package Name(s) TOSHIBA: 2-3AB1A Nickname: SOT23
©2016 Toshiba Corporation
TBAT54,TBAT54A,TBAT54C,TBAT54S
Schottky Barrier Diode Silicon Epitaxial
TBAT54,TBAT54A,TBAT54C,TBAT54S
1. Applications
• Ultra-High-Speed Switching
2. Packaging
5. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )
Characteristics Peak reverse voltage Reverse voltage Average rectified current Peak forward current Non-repetitive peak forward surge current Power dissipation Junction temperature Storage temperature Symbol VRM VR IO IFM IFSM PD Tj Tstg (Note 3) (Note 3) (Note 1), (Note 3) (Note 2), (Note 3) Note Rating 35 30 200 300 1 320 150 -55 to 150 A mW mA Unit V
BAT54 打标KL1肖特基二极管选型手册
BAT54/A/C/S
REVERSE CURRENT IR (uA)
FORWARD CURRENT IF (mA)
Forward Characteristics
1000
100
oC
T
=100
a
10
oC
=2 5
T a
1
0.1
Reverse Characteristics
100
Symbol VRRM VRWM
VR IFM PD RθJA Tj TSTG
Limit
30
200 200 500 125 -55~+150
Electrical Characteristics @Ta=25℃
Parameter Reverse breakdown voltage
Forward voltage
FEATURES z Extremely Fast Switching Speed
SOT-23
BAT54 MARKING: KL1
BAT54A MARKING: KL2
BAT54C MARKING: KL3
BAT54S MARKING: KL4
Maximum Ratings @Ta=25℃
Parameter Peak Repetitive Peak Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Forward Continuous Current Power Dissipation Thermal Resistance Junction to Ambient Junction temperature Storage Temperature
肖特基二极管手册
肖特基二极管手册肖特基二极管手册是一本介绍肖特基二极管的基础知识、特点、应用等方面的工具书，对于电子工程师和研究人员来说，是一本必不可少的参考书。
以下是本文对肖特基二极管手册内容进行的简要介绍。
第一部分：基础知识在这一部分中，手册介绍了肖特基二极管的基本原理，即该器件利用了金属-半导体接触的本质非对称性质，实现了非常优秀的整流效果。
手册中详细描述了金属-半导体界面的特殊结构和电学性质，以及该结构所带来的整流特性。
同时，肖特基二极管与传统的 P-N 结二极管相比，有着极高的速度和响应时间，以及低的噪声水平。
手册详细分析了这些特殊的性质，并且提供了实验数据和例子，以便读者更好地理解这些特点。
第二部分：特点和规格这一部分介绍了肖特基二极管的主要特征和规格参数。
手册详细解释了器件的最大可承受电压、额定电流和最大功率等特点，同时还介绍了其内部的各种特殊设计。
手册提供了非常详细和全面的指导和介绍，帮助读者了解如何选择和应用不同类型的肖特基二极管。
第三部分：应用在应用部分，手册介绍了肖特基二极管的实际应用和使用场景。
以 DC/DC 变换器、交流/直流转换器、折叠、调制和开关电源等器件为例，手册提供了一些不同应用领域的例子，说明了如何在特定的应用中选择和使用肖特基二极管。
同时，手册还介绍了一些实验和测试技术，以便读者更好地理解和掌握器件的特性和表现。
手册提供了多种实验方案和测试数据，帮助读者进行自己的实验和测试。
总结肖特基二极管手册是一本权威、全面、实用的工具书。
其中包含了肖特基二极管的基本知识、主要特点和规格、应用和实验方案等方面的信息，是一本值得电子工程师和研究人员深入阅读和掌握的参考书。
(整理)常用肖特基二极管参数
常用肖特基二极管参数型号制造商封装 If/A Vrrm/V 最大Vf/V1SS294 TOS SC-59 0.140 0.60BAT15-099 INF SOT143 0.11 40.32BAT54A PS SOT23 0.20 30 0.5010MQ060N IR SMA 0.7790 0.6510MQ100N IR SMA 0.77 100 0.9610BQ015 IR SMB 1.0015 0.34SS12 GS DO214 1.0020 0.50MBRS130LT3 ON - 1.0030 0.3910BQ040 IR SMB 1.0040 0.53RB060L-40 ROHM PMDS 1.00 40 0RB160L-40 ROHM PMDS 1.00 400.55SS14 GS DO214 1.0040 0.5MBRS140T3 ON - 1.0040 0.10BQ060 IR SMB 1.0060 0.57SS16 GS DO214 1.0060 0.7510BQ100 IR SMB 1.00 100 0.78MBRS1100T3 ON - 1.00 100 0.7510MQ040N IR SMA 1.10 40 0.5115MQ040N IR SMA 1.7040 0.55PBYR245CT PS SOT223 2.00 450.4530BQ015 IR SMC 3.0015 0.3530BQ040 IR SMC 3.0040 0.5130BQ060 IR SMC 3.0060 0.5830BQ100 IR SMC 3.00100 0.79STPS340U STM SOD6 3.00 4 0 0.84MBRS340T3 ON - 3.0040 0.52RB051L-40 ROHM PMDS 3.00 400.45MBRS360T3 ON - 3.0060 0.7030WQ04FN IR DPAK 3.30 40 0.6230WQ06FN IR DPAK 3.30 60 0.7030WQ10FN IR DPAK 3.30 100 0.9130WQ03FN IR DPAK 3.50 30 0.5250WQ03FN IR DPAK 5.50 30 0.5350WQ06FN IR DPAK 5.50 60 0.576CWQ06FN IR DPAK 6.60 60 0.586CWQ10FN IR DPAKpr 6.60 100 0.811N5817 ON 轴向 1.00 20 0.751N5818 ON 轴向 1.00 30 0.55SB130 GS 轴向 1.00 30 0.50 1N5819 ON 轴向 1.00 40 0.60 MBR150 ON 轴向 1.00 50 1.00 MBR160 ON 轴向 1.00 60 1.00 11DQ10 IR 轴向 1.10 100 0.8511DQ04 IR 轴向 1.10 40 0.55 11DQ05 IR 轴向 1.10 50 0.5811DQ06 IR 轴向 1.10 60 0.58MBRS340TR IR SMC 3.0040 0.431N5820 ON 轴向 3.00 20 0.851N5821 ON 轴向 3.00 30 0.381N5822 ON 轴向 3.00 40 0.52MBR360 ON 轴向 3.00 60 1.00SS32 GS DO214 3.0020 3.00SS34 GS DO214 3.0040 0.5031DQ10 IR DO201 3.30 100 0.85SB530 GS 轴向 5.00 30 0.57SB540 GS DO201 5.0040 0.5750SQ080 IR 轴向 5.00 80 0.6650SQ100 IR 轴向 5.00 100 0.66MBR735 GS TO220 7.50 35 0.84MBR745 GS TO220 7.50 45 0.84MBR745 IR TO220 7.50 45 0.8480SQ040 IR 轴向 8.00 40 0.53STQ080 IR TO220 8.0080 0.728TQ100 TO220 8.00 100 0.7280SQ040 IR 轴向 8.00 40 0.5380SQ035 IR DO204AR 8.00 3 5 0.53HFA16PA60C IR TO247CT 8.00 6001.7095SQ015 轴向 9.00 15 0.3190SQ040 轴向 9.00 40 0.4810TQ045 TO220 10.0045 0.57MBR1035 GS TO220 10.0035 0.84MBR1045 ON TO220 10.00STPS1045F ON ISO220 10.00 450.64MBR2060CT ON TO220 10.00 600.85MBR1060 ON TO220 10.0060 0.95PBYR10100 PS TO220 10.00 10 0 0.7010TQ040 IR TO220 10.0040 0.57MBR1045 IR TO220 10.0045 0.8410CTQ150-1 IR D2pak 10.00 15 0 0.7340L15CTS IR D2pak 10.0085CNQ015A IR D61 80.0015 0.32150K40A IR D08 150.00400 1.3312CTQ040 IR TO220 12.00 450.73MBR1545CT IR TO220pr 15.00 45 0.72MBR1660 GS TO220 16.0060 0.7516CTQ080 IR TO220pr 16.00 80 0.7216CTQ100 IR TO220pr 16.00 100 0.7216CTQ100-1 IR D2Pak 16.00 1000.7218TQ045 ON TO220 18.0045 0.60HFA16PB120 IR TO247 16.00 12003.00MBR1645 IR TO220AC 16.00 450.6319CTQ015 IR TO220 19.00 150.3620CTQ045 IR TO220pr 20.00 45 0.6420TQ045 IR TO220 20.0045 0.57MBR2045CT IR TO220pr 20.00 45 0.84MBR2090CT IR TO220pr 20.00 90 0.80MBR20100CT IR TO220pr 20.00 100 0.80MBR20100CT-1IR TO262 20.00 1000.80MBR2080CT IR TO220AB 20.00 800.85MBR2545CT IR TO220AB 30.00 450.82MBR3045WT IR TO247 30.00 4532CTQ030 IR TO220pr 30.00 30 0.4932CTQ303-1 IR D2Pak 30.00 300.4930CPQ060 IR TO220pr 30.00 60 0.6230CPQ080 IR TO247AC 30.00 800.8630CPQ100 IR TO247pr 30.00 100 0.8630CPQ150 IR TO247pr 30.00 150 1.0040CPQ040 IR TO247pr 40.00 40 0.4940CPQ045 IR TO247pr 40.00 45 0.4940CPQ050 IR TO247AA 40.00 500.5340CPQ100 IR TO247pr 40.00 100 0.7740L15CT IR TO220AB 40.00 150.5347CTQ020 IR TO220 40.00 200.3448CTQ060 IR TO220 40.00 600.5840L15CW IR TO247 40.0015 0.5242CTQ030 IR TO220 40.00 300.3840CTQ045 IR TO220 40.00 450.6840L45CW IR TO247 40.0045 0.7040CPQ060 ON TO247 40.00 600.68MBR4045WT IR TO247 40.00 450.59MBR4060WT IR TO247 40.00 600.7743CTQ100 IR TO220 40.00 10 0 0.9852CPQ030 IR TO247 50.0030 0.38MBR6045WT IR TO247pr 60.00 450.73STPS6045CPI ON TOP3I 60.00 450.8465PQ015 IR TO247 65.0015 0.5072CPQ030 IR TO247AC 70.00 300.5185CNQ015 IR D61 80.0015 0.3283CNQ100 IR D61 80.00100 0.6780CPQ020 IR TO247 80.0020 0.3282CNQ030A IR D61 80.0030 0.3782CNQ045A IR D61 80.0045 0.4783CNQ100A IR D61 80.00100 0.67120NQ045 IR HALFPAK 120.00 450.52125NQ015 IR D67 120.0015 0.33122NQ030 IR D67 120.0030 0.41STPS16045TV ON ISOTOP 160.00 450.95182NQ030 IR D67 180.0030 0.41200CNQ040 IR TO244AB 200.00 400.54200CNQ045 IR TO244AB 200.00 450.54200CNQ030 IR TO244AB 200.00 300.48STPS24045TV ON ISOTOP 240.00 450.91203CMQ080 IR TO244 200.00 8 0 1.03240NQ045 IR HALFPAK 240.00 450.55301CNQ045 IR TO244 300.00 4 5 0.59403CNQ100 IR TO244AB 400.00 1000.83440CNQ030 IR TO244AB 440.00 300.41。
肖特基二极管 BAT54W-D 数据表说明书
BAT54WSchottky Barrier DiodeThese Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited.Features•Extremely Fast Switching Speed•Extremely Low Forward V oltage − 0.35 V (Typ) @ I F = 10 mAdc •NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC −Q101Qualified and PPAP Capable•These Devices are Pb −Free, Halogen Free/BFR Free and are RoHS Compliant*MAXIMUM RATINGS (T J = 125°C unless otherwise noted)RatingSymbol ValueUnit Reverse VoltageV R 30V Forward Power Dissipation @ T A = 25°CDerate above 25°C P F2001.6mW mW/°CForward Current (DC)I F 200 MaxmA Non −Repetitive Peak Forward Current,t p < 10 msecI FSM600mARepetitive Peak Forward Current Pulse Wave = 1 sec, Duty Cycle = 66%I FRM300mAThermal Resistance, Junction −to −Ambient 10 mm 2 pad, 1 oz. Cu 100 mm 2 pad, 1 oz. Cu R qJA285216°C/WJunction Temperature T J −55 to 125°C Storage Temperature RangeT stg−55 to +150°CStresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.*For additional information on our Pb −Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.3130 VOLTSCHOTTKY BARRIER DETECTOR AND SWITCHINGDIODE†For information on tape and reel specifications,including part orientation and tape sizes, please refer to our T ape and Reel Packaging Specifications Brochure, BRD8011/D.Device Package Shipping †ORDERING INFORMATIONBAT54WT1G SOT −323(Pb −Free)3,000 / Tape & Reel SOT −323CASE 419STYLE 2MARKING DIAGRAMB4M G GB4= Device Code M = Date Code*G= Pb −Free Package(Note: Microdot may be in either location)*Date Code orientation may vary depending up-on manufacturing location.1NSVBAT54WT1GSOT −323(Pb −Free)3,000 / Tape & ReelELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)CharacteristicSymbol Min Typ Max Unit Reverse Breakdown Voltage (I R = 10 m A)V (BR)R 30−−V Total Capacitance(V R = 1.0 V, f = 1.0 MHz)C T −7.610pF Reverse Leakage (V R = 25 V)I R −0.5 2.0m Adc Forward Voltage (I F = 0.1 mA)(I F = 1.0 mA)(IF = 10 mA)(I F = 30 mA)(I F = 100 mA)V F−−−−−0.220.290.350.410.520.240.320.400.500.80VReverse Recovery Time(I F = I R = 10 mAdc, I R(REC) = 1.0 mAdc, Figure 1)t rr−−5.0nsNotes: 1. A 2.0 k W variable resistor adjusted for a Forward Current (I F ) of 10 mA.2. Input pulse is adjusted so I R(peak) is equal to 10 mA.3. t p » t rrV Rt r10%90%I I OUTPUT PULSE(I F = I R = 10 mA; measuredat i R(REC) = 1 mA)INPUT SIGNALFigure 1. Recovery Time Equivalent Test CircuitC T , T O T A L C A P A C I T A N C E (p F )100V F , FORWARD VOLTAGE (VOLTS)101.00.110V R , REVERSE VOLTAGE (VOLTS)1.00.10.010.001V R , REVERSE VOLTAGE (VOLTS)5101530Figure 2. Forward VoltageFigure 3. Leakage CurrentFigure 4. Total Capacitance10010002520I R , R E V E R S E C U R R E N T (m A )I F , F O R W A R D C U R R E N T (m A )14121086420SC −70 (SOT −323)CASE 419ISSUE PDATE 07 OCT 2021SCALE 4:1STYLE 3:PIN 1.BASE2.EMITTER3.COLLECTOR STYLE 4:PIN 1.CATHODE2.CATHODE3.ANODE STYLE 2:PIN 1.ANODE2.N.C.3.CATHODE STYLE 1:CANCELLEDSTYLE 5:PIN 1.ANODE 2.ANODE 3.CATHODE STYLE 6:PIN 1.EMITTER 2.BASE3.COLLECTORSTYLE 7:PIN 1.BASE 2.EMITTER 3.COLLECTORSTYLE 8:PIN 1.GATE 2.SOURCE 3.DRAINSTYLE 9:PIN 1.ANODE 2.CATHODE3.CATHODE-ANODESTYLE 10:PIN 1.CATHODE 2.ANODE3.ANODE-CATHODEXX M G G XX = Specific Device Code M = Date CodeG= Pb −Free PackageGENERICMARKING DIAGRAM1STYLE 11:PIN 1.CATHODE2.CATHODE3.CATHODE*This information is generic. Please refer to device data sheet for actual part marking.Pb −Free indicator, “G” or microdot “G ”, may or may not be present. Some products maynot follow the Generic Marking.MECHANICAL CASE OUTLINEPACKAGE DIMENSIONSPUBLICATION ORDERING INFORMATIONTECHNICAL SUPPORTNorth American Technical Support:Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 011 421 33 790 2910LITERATURE FULFILLMENT :Email Requests to:*******************onsemi Website: Europe, Middle East and Africa Technical Support:Phone: 00421 33 790 2910For additional information, please contact your local Sales Representative。
[常用肖特基二极管参数]常用肖特基二极管参数
![[常用肖特基二极管参数]常用肖特基二极管参数](https://img.taocdn.com/s3/m/0f594dc0b8f3f90f76c66137ee06eff9aef8493e.png)
[常用肖特基二极管参数]常用肖特基二极管参数篇一: 常用肖特基二极管参数型号制造商封装If/A Vrrm/V 最大Vf/V1SS294 TOS SC-59 0.1 40 0.60BA T15-099 INF SOT143 0.11 4 0.32BA T54APSSOT23 0.20 30 0.5010MQ060NIRSMA0.77 90 0.6510MQ100NIRSMA0.77 100 0.9610BQ015 IRSMB1.00 15 0.34SS12GSDO2141.00 20 0.50MBRS130L T3ON-1.00 30 0.3910BQ040 IRSMB1.00 40 0.53RB060L-40 ROHMPMDS 1.00 40 0.55 RB160L-40 ROHMPMDS 1.00 40 0.55 SS14GSDO2141.00 40 0.50MBRS140T3 ON-1.00 40 0.6010BQ060 IRSMB1.00 60 0.57SS16GSDO2141.00 60 0.7510BQ100 IRSMB1.00 100 0.78 MBRS1100T3ON-1.00 100 0.7510MQ040NIRSMA1.10 40 0.5115MQ040NIRSMA1.70 40 0.55PBYR245CT PSSOT223 2.00 45 0.45 30BQ015 IRSMC3.00 15 0.3530BQ040 IRSMC3.00 40 0.5130BQ060 IRSMC3.00 60 0.5830BQ100 IRSMC3.00 100 0.79 STPS340USTM SOD6 3.00 40 0.84 MBRS340T3 ON-3.00 40 0.52RB051L-40 ROHMPMDS 3.00 40 0.45 MBRS360T3 ON-3.00 60 0.7030WQ04FNIRDPAK 3.30 40 0.6230WQ06FNIRDPAK 3.30 60 0.7030WQ10FNIRDPAK 3.30 100 0.91 30WQ03FNIRDPAK 3.50 30 0.52 50WQ03FNIRDPAK 5.50 30 0.53 50WQ06FNIRDPAK 5.50 60 0.576CWQ06FNIRDPAK 6.60 60 0.586CWQ10FNIRDPAK pr6.60 100 0.81 1N5817ON轴向1.00 20 0.751N5818ON轴向1.00 30 0.55SB130 GS轴向1.00 30 0.501N5819ON轴向1.00 40 0.60MBR150ON轴向1.00 50 1.00MBR160ON轴向1.00 60 1.00 11DQ10IR轴向1.10 100 0.85 11DQ04IR轴向1.10 40 0.5511DQ05IR轴向1.10 50 0.5811DQ06IR轴向1.10 60 0.58 MBRS340TR IRSMC3.00 40 0.43 1N5820ON轴向3.00 20 0.851N5821ON轴向3.00 30 0.381N5822ON轴向3.00 40 0.52 MBR360ON轴向3.00 60 1.00 SS32GSDO2143.00 20 3.00SS34GSDO2143.00 40 0.5031DQ10IRDO2013.30 100 0.85 SB530 GS轴向5.00 30 0.57 SB540 GSDO2015.00 40 0.57 50SQ080 IR轴向5.00 80 0.66 50SQ100 IR轴向5.00 100 0.66 MBR735GSTO2207.50 35 0.84 MBR745GSTO2207.50 45 0.84 MBR745IRTO2207.50 45 0.84 80SQ040 IR轴向8.00 40 0.53 STQ080IRTO2208.00 80 0.728TQ100TO2208.00 100 0.7280SQ040 IR轴向8.00 40 0.5380SQ035 IRDO204AR8.00 35 0.53 HFA16PA60CIRTO247CT8.00 600 1.70 95SQ015 轴向9.00 15 0.3190SQ040 轴向9.00 40 0.4810TQ045 TO22010.00 45 0.57MBR1035 GSTO22010.00 35 0.84 MBR1045 ONTO22010.00 45 0.84 STPS1045F ONISO220 10.00 45 0.64 MBR2060CT ONTO22010.00 60 0.85MBR1060 ONTO22010.00 60 0.95 PBYR10100 PSTO22010.00 100 0.70 10TQ040 IRTO22010.00 40 0.57 MBR1045 IRTO22010.00 45 0.8410CTQ150-1IRD2pak10.00 150 0.73 40L15CTSIRD2pak10.00 150 0.4185CNQ015A IRD6180.00 15 0.32 150K40A IRD08150.00 400 1.3312CTQ040 IRTO220 12.00 45 0.73 MBR1545CTIRTO220 pr15.00 45 0.72 MBR1660GSTO220 16.00 60 0.7516CTQ080 IRTO220 pr16.00 80 0.72 16CTQ100 IRTO220 pr16.00 100 0.72 16CTQ100-1 IRD2Pak 16.00 100 0.72 18TQ045ONTO220 18.00 45 0.60 HFA16PB120 IRTO247 16.00 1200 3.00 MBR1645IRTO220AC 16.00 45 0.63 19CTQ015 IRTO220 19.00 15 0.3620CTQ045 IRTO220 pr20.00 45 0.64 20TQ045IRTO220 20.00 45 0.57MBR2045CTIRTO220 pr20.00 45 0.84 MBR2090CTIRTO220 pr20.00 90 0.80MBR20100CT IRTO220 pr20.00 100 0.80 MBR20100CT-1IRTO262 20.00 100 0.80 MBR2080CTIRTO220AB 20.00 80 0.85 MBR2545CTIRTO220AB 30.00 45 0.82 MBR3045WTIRTO247 30.00 4532CTQ030 IRTO220 pr30.00 30 0.4932CTQ303-1 IRD2Pak 30.00 30 0.4930CPQ060 IRTO220 pr30.00 60 0.6230CPQ080IRTO247AC 30.00 80 0.8630CPQ100IRTO247 pr30.00 100 0.8630CPQ150 IRTO247 pr30.00 150 1.0040CPQ040 IRTO247 pr40.00 40 0.49 40CPQ045 IRTO247 pr40.00 45 0.49 40CPQ050 IRTO247AA 40.00 50 0.53 40CPQ100 IRTO247 pr40.00 100 0.77 40L15CTIRTO220AB 40.00 15 0.53 47CTQ020 IRTO220 40.00 20 0.34 48CTQ060 IRTO220 40.00 60 0.58 40L15CWIRTO247 40.00 15 0.5242CTQ030 IRTO220 40.00 30 0.38 40CTQ045 IRTO220 40.00 45 0.68 40L45CWIRTO247 40.00 45 0.7040CPQ060 ONTO247 40.00 60 0.68 MBR4045WTIRTO247 40.00 45 0.59 MBR4060WTIRTO247 40.00 60 0.77 43CTQ100 IRTO220 40.00 100 0.98 52CPQ030 IRTO247 50.00 30 0.38 MBR6045WTIRTO247pr 60.00 45 0.73 STPS6045CPIONTOP3I 60.00 45 0.84 65PQ015IRTO247 65.00 15 0.5072CPQ030 IRTO247AC 70.00 30 0.51 85CNQ015 IRD61 80.00 15 0.3283CNQ100 IRD61 80.00 100 0.6780CPQ020 IRTO247 80.00 20 0.3282CNQ030AIRD61 80.00 30 0.3782CNQ045AIRD61 80.00 45 0.4783CNQ100AIRD61 80.00 100 0.67120NQ045IRHALFPAK 120.00 45 0.52 125NQ015 IRD67 120.00 15 0.33122NQ030 IRD67 120.00 30 0.41STPS16045TVONISOTOP 160.00 45 0.95 182NQ030 IRD67 180.00 30 0.41200CNQ040IRTO244AB 200.00 40 0.54 200CNQ045IRTO244AB 200.00 45 0.54200CNQ030IRTO244AB 200.00 30 0.48 STPS24045TVONISOTOP 240.00 45 0.91 203CMQ080IRTO244 200.00 80 1.03 240NQ045 IRHALFPAK 240.00 45 0.55 301CNQ045IRTO244 300.00 45 0.59 403CNQ100IRTO244AB 400.00 100 0.83 440CNQ030IRTO244AB 440.00 30 0.41 肖特基二极管肖特基二极管肖特基整流二极管型号额定IA VRRM V向峰值电压浪涌电流IFSM A反向恢复时间ns SB0200.6202010SB0300.6302010SB0400.64020101N581712025101N581813025101N58191402510SB1201204010SB1301304010SB1401404010SB150150405SB160160405 SR1201204020 SR1301304020 SR1401404020 SR1501504020 SR1601604020 SR1801804020 SR1A011004020 SB2202205020 SB2302305020 SB2402405020SB2502505020 SB2602605020 SR2202205010 SR2302305010 SR2402405010 SR2502505010 SR2602605010 SR2802805010 SR2A021005010 1N58203208020 1N582133080201N58223408020 SB3203208020 SB3303308020 SB3403408020 SB3503508010 SB3603608010 SR3203208020 SR3303308020 SR3403408020 SR3503508020 SR3603608020SR3803808020 SR3A031008020 SB52052015050 SB53053015050 SB54054015050 SB55055015025 SB56056015025 SR52052015050 SR53053015050 SR54054015050 SR55055015025SR56056015025SR58058015025SR5A0510015025篇二: 肖特基二极管原理和常用参数和检测方法肖特基二极管原理肖特基势垒二极管SBD是近年来间世的低功耗、大电流、超高速半导体器件。
BAT54系列二极管
REVERSE VOLTAGE , (V)
FIG.3 - TYPICAL FORWARD VOLTAGE FORWARD CURRENT AT VARIOUS TEMPERATURE
1000
FIG.4 - TYPICAL VARIATION OF REVERSE CURRENT AT VARIOUS TEMPERATURES
Unit
V mA mA mW K/W °C °C
Maximum Repetitive Peak Reverse Voltage Maximum Rectified Average Forward Current Maximum Peak Forward Surge Current at tp < 1 s Power Dissipation Thermal Resistance Junction to Ambient Air Junction Temperature Range Storage Temperature Range
Note : (1) These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Page 1 of 2
Rev. 02: July 2, 2008
14 12 10 8 6 4 2 0 f = 1.0 MHz
250
POWER DISSIPATION, (mA)
200 RӨJA = 430 K/W 150
100
50
0
0
25
50
75
100
125
150
FOSAN富信电子 二级管 BAT54 A C S-产品规格书
安徽富信半导体科技有限公司ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO.,LTD.BAT54/A/C/SSOT-23Schottky Barrier Diode 肖特基势垒二极管▉Internal Configuration&DeviceMarking 内部结构与产品打标Type 型号BAT54BAT54ABAT54CBAT54SPin 管脚Mark 打标KL1KL2KL3KL4▉AbsoluteMaximum Ratings 最大额定值Characteristic 特性参数Symbol 符号Rat 额定值Unit 单位Peak Reverse V oltage 反向峰值电压V RRM 30V Reverse Work Voltage 反向工作电压V RWMDC Reverse Voltage 直流反向电压V R Forward Work Current 正向工作电流I F (I O )200mA Peak Forward Current 正向峰值电流I FM600mA Power dissipation 耗散功率P D (Ta=25℃)225mW Thermal Resistance J-A 结到环境热阻R θJA 555℃/WJunction and Storage Temperature 结温和储藏温度T J ,T stg-55to+150℃■Electrical Characteristics 电特性(T A =25℃unless otherwise noted 如无特殊说明，温度为25℃)Characteristic 特性参数Symbol 符号Min 最小值Max 最大值Unit 单位Reverse Breakdown Voltage 反向击穿电压(I R =100µA)V (BR)30—V Reverse Leakage Current 反向漏电流(V R =25V)I R —2µAForward V oltage(I F =0.1mA)正向电压(I F =1mA)(I F =10mA)(I F =30mA)(I F =100mA)V F —0.240.320.40.50.8VDiode Capacitance 二极管电容(V R =1V,f=1MHz)C D—10pF Reverse Recovery Time 反向恢复时间T rr—5nSANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO.,LTD.BAT54/A/C/S ■Typical Characteristic Curve典型特性曲线ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO.,LTD.BAT54/A/C/S■Dimension外形封装尺寸Symbol Dimensions In Millimeters Dimensions In Inches Min Max Min Max A 0.900 1.1500.0350.045A10.0000.1000.0000.004A20.900 1.0500.0350.041b 0.3000.5000.0120.020c 0.0800.1500.0030.006D 2.800 3.0000.1100.118E 1.200 1.4000.0500.055E1 2.2502.5500.0890.100e 0.950TYP0.037TYPe1 1.8002.0000.0710.079L 0.550REF0.022REFL10.3000.5000.0120.020θ0o8o 0o8o。
扬州扬杰肖特基二极管选型手册
扬州扬杰肖特基二极管选型手册（最新版）目录1.扬州扬杰肖特基二极管选型手册概述2.扬州扬杰肖特基二极管的种类与特点3.扬州扬杰肖特基二极管的选型流程4.扬州扬杰肖特基二极管的应用领域5.结语正文一、扬州扬杰肖特基二极管选型手册概述扬州扬杰电子科技有限公司（以下简称“扬州扬杰”）致力于为客户提供高品质的半导体产品，其中肖特基二极管作为公司的主要产品之一，广泛应用于各种电子设备中。
为了帮助客户快速、准确地选择合适的肖特基二极管，扬州扬杰特别推出了肖特基二极管选型手册。
本手册旨在为客户提供详细的选型指导，确保客户能够根据实际需求选择到最佳的肖特基二极管。
二、扬州扬杰肖特基二极管的种类与特点1.种类扬州扬杰肖特基二极管分为多种类型，主要包括：（1）普通肖特基二极管（SBD）（2）快速恢复肖特基二极管（Fast Recovery SBD）（3）高电压肖特基二极管（High Voltage SBD）（4）低正向电压肖特基二极管（Low Forward Voltage SBD）扬州扬杰肖特基二极管具有以下特点：（1）低动态阻抗：在开关状态下，具有较低的动态阻抗，有利于提高整机效率。
（2）高电流速度：具有较高的电流速度，可满足高速开关需求。
（3）低正向电压：正向电压较低，有利于降低整机功耗。
（4）高抗浪涌能力：具有较高的抗浪涌能力，可有效保护电路免受浪涌冲击。
三、扬州扬杰肖特基二极管的选型流程1.确定需求参数：根据实际应用需求，确定所需的肖特基二极管参数，如正向电压、反向电压、电流、动态阻抗等。
2.对照产品手册：根据所需参数，查阅扬州扬杰肖特基二极管选型手册，初步筛选出符合要求的产品型号。
3.比较产品性能：对初步筛选出的产品型号进行性能比较，选择最符合需求的产品。
4.咨询专业技术支持：在选型过程中遇到问题，可随时联系扬州扬杰专业技术支持团队，获取专业建议。
四、扬州扬杰肖特基二极管的应用领域扬州扬杰肖特基二极管广泛应用于以下领域：1.通信设备：如手机、路由器、交换机等。
- 1、下载文档前请自行甄别文档内容的完整性，平台不提供额外的编辑、内容补充、找答案等附加服务。
- 2、"仅部分预览"的文档,不可在线预览部分如存在完整性等问题,可反馈申请退款(可完整预览的文档不适用该条件!)。
- 3、如文档侵犯您的权益，请联系客服反馈,我们会尽快为您处理(人工客服工作时间：9:00-18:30)。
BAT54/A/C/S
REVERSE CURRENT IR (uA)
FORWARD CURRENT IF (mA)
Forward Characteristics
1000
100
oC
T
=100
a
10
oC
=2 5
T a
1
0.1
Reverse Characteristics
100
【领先的片式无源器件整合供应商—南京南山半导体有限公司】
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Diodes
BA T54/A/C/S SCHOTTKY BARRIER DIODE
B,Jul,2012
【领先的片式无源器件整合供应商—南京南山半导体有限公司】
联系资料
电话：
南京南山半导体有限公司－样品申请单
技术支持：
Hale Waihona Puke 传真：电邮：Service@
客户基本资料
公司名称
联系方式
电话：
收货地址
主要产品
联络人
姓名：
电话：
传真：
职务： 手机：
FEATURES z Extremely Fast Switching Speed
SOT-23
BAT54 MARKING: KL1
BAT54A MARKING: KL2
BAT54C MARKING: KL3
BAT54S MARKING: KL4
Maximum Ratings @Ta=25℃
Parameter Peak Repetitive Peak Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Forward Continuous Current Power Dissipation Thermal Resistance Junction to Ambient Junction temperature Storage Temperature
网址：
□技术 □采购 □贸易商 邮箱：
元器件明细资料
元器件名称 型号及封装
单机用量 申请数量 备注
预计生产情况
预计小批量生产时间：
规模生产时间：
样品申请时间：
样品申请流程
1、请详细、全面、真实填写上列各项。表格不够填写，可自行复制。 2、请以附件的形式将该文档通过 E-mail 发送，并请客户将此单打印盖章后 邮件至：Service@nsc。 。 3、公司将根据客户所填信息并综合相关情况，及时确定该样品申请是否执行及如何执行。 4、收到样品申请单并经审核通过后，南京公司有现货24小时内发出，如需订货，交期3-4周，非常规品顺延1-2 周。 5、样品免费，运费到付(一般选择顺丰快递)；样品数量规定：单个型号5～20pcs， 或按单机数量2～5套。 6、特别说明：由于体制约束等不确定因素，我们并不保证样品数量和型号完全符合要求，也不承诺一定按期 交出。
℃
Conditions IR=100μA IF=0.1mA IF=1mA IF=10mA IF=30mA IF=100mA VR=25V
VR=1V,f=1MHz IF=IR=10mA
Irr=0.1XIR,RL=100Ω
B,Jul,2012
【领先的片式无源器件整合供应商—南京南山半导体有限公司】
Typical Characteristics
Reverse current Diode capacitance
Symbol
Min
Typ Max Unit
V (BR)
30
V
VF1
0.24
V
VF2
0.32
V
VF3
0.40
V
VF4
0.50
V
VF5
1
V
IR
2
μA
CD
10
pF
Reverse recovery time
trr
5
ns
Unit
V
mA mW ℃/W ℃
Ta=100 oC 10
1 Ta=25 oC
0.1
0.01 0
200
400
600
800
1000
FORWARD VOLTAGE VF (mV)
0.01 0
5
10
15
20
25
30
REVERSE VOLTAGE VR (V)
Capacitance Characteristics
20 Ta=25℃ f=1MHz
16
12
8
4
0
0
5
10
15
20
25
30
REVERSE VOLTAGE VR (V)
POWER DISSIPATION PD (mW)
Power Derating Curve
300
250
200
150
100
50
0
0
25
50
75
100
125
150
AMBIENT TEMPERATURE Ta (℃)
CAPACITANCE BETWEEN TERMINALS CT (pF)
回访记录
□已联系确认 日期：
□已建议执行 日期：
□未发送但已下单 日期：
□已发送样品 日期：
□客户已签收 日期：
第1页共1页
Symbol VRRM VRWM
VR IFM PD RθJA Tj TSTG
Limit
30
200 200 500 125 -55~+150
Electrical Characteristics @Ta=25℃
Parameter Reverse breakdown voltage
Forward voltage