AO4604 规格书

Symbol Symbol Device
Typ Max Units n-ch 4862.5°C/W n-ch 74110°C/W R θJL n-ch 3540°C/W
p-ch 4862.5°C/W p-ch 74110°C/W R θJL
p-ch
35
40°C/W
Maximum Junction-to-Lead
C
Steady-State Maximum Junction-to-Ambient
A
t ≤ 10s R θJA Maximum Junction-to-Ambient
A
Steady-State Steady-State Absolute Maximum Ratings T A =25°C unless otherwise noted
Parameter Thermal Characteristics: n-channel and p-channel Maximum Junction-to-Lead
C
Steady-State Parameter
Maximum Junction-to-Ambient
A
t ≤ 10s R θJA Maximum Junction-to-Ambient
A
AO4604
SOIC-8
Top View Bottom View
Alpha & Omega Semiconductor, Ltd.
Symbol
Min Typ Max Units BV DSS 30
V
0.0041T J =55°C
5I GSS 100
nA V GS(th)1 1.93V I D(ON)20
A
22.528T J =125°C
31.33834.542
m Ωg FS 10
15.4S V SD 0.76
1V I S
3
A C iss 680
820
pF C oss 102pF C rss 77pF
R g
1.22ΩQ g (10V)13.84
17nC Q g (4.5V) 6.748.1
nC Q gs 1.82nC Q gd 3.2nC t D(on) 4.6
ns t r 4.1ns t D(off)20.6ns t f 5.2ns
t rr 16.520
ns Q rr
7.8
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE
I F =6.9A, dI/dt=100A/µs I F =6.9A, dI/dt=100A/µs
N-CHANNEL: Electrical Characteristics (T J =25°C unless otherwise noted)Parameter Conditions STATIC PARAMETERS Drain-Source Breakdown Voltage I D =250µA, V GS =0V I DSS Zero Gate Voltage Drain Current V DS =24V, V GS =0V
µA Gate-Body leakage current V DS =0V, V GS =±20V Gate Threshold Voltage V DS =V GS I D =250µA On state drain current
V GS =4.5V, V DS =5V R DS(ON)Static Drain-Source On-Resistance
V GS =10V, I D =6.9A
m ΩV GS =4.5V, I D =5.0A
V GS =0V, V DS =0V, f=1MHz
Forward Transconductance V DS =5V, I D =6.9A Diode Forward Voltage
I S =1A
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Input Capacitance V GS =0V, V DS =15V, f=1MHz Output Capacitance
Gate Drain Charge Reverse Transfer Capacitance Turn-On Rise Time Turn-Off DelayTime Gate resistance
Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge
Turn-Off Fall Time
SWITCHING PARAMETERS
Total Gate Charge Total Gate Charge Gate Source Charge Turn-On DelayTime V GS =10V, V DS =15V, R L =2.2Ω,
R GEN =3Ω
V GS =10V, V DS =15V, I D =6.9A
A: The value of R θJA is measured with the device mounted on 1in 2
FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2
FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The SOA curve provides a single pulse rating.Rev 4: Jan 2009
N-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
Vds
Charge Gate Charge Test Circuit & Waveform
D iode R ecovery Te
V
V
dd
V dd
V dd
V V
90%
R esistive S w itch ing Te st C ircuit & W avefo rm s
Symbol
Min Typ Max Units BV DSS -30
V
-1T J =55°C
-5I GSS ±100
nA V GS(th)-1-1.8
-3V I D(ON)
-20
A 3952T J =125°C
54706787
m Ωg FS 6
8.6S V SD -0.77
-1V I S
-2.8
A C iss 700
900
pF C oss 120pF C rss 75pF
R g
1015ΩQ g (10V)14.7
19nC Q g (4.5V)7.610
nC Q gs 2nC Q gd 3.8nC t D(on)8.3
ns t r 5ns t D(off)29ns t f 14ns
t rr 23.530
ns Q rr
13.4
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE
DYNAMIC PARAMETERS Maximum Body-Diode Continuous Current
Gate resistance
V GS =0V, V DS =0V, f=1MHz
V GS =0V, V DS =-15V, f=1MHz Input Capacitance Output Capacitance
Turn-On Rise Time Turn-Off DelayTime V GS =-10V, V DS =-15V, R L =3Ω,R GEN =3Ω
Turn-Off Fall Time
Turn-On DelayTime SWITCHING PARAMETERS
Total Gate Charge (4.5V)Gate Source Charge Gate Drain Charge Total Gate Charge (10V)V GS =-10V, V DS =-15V, I D =-5A
m ΩV GS =-4.5V, I D =-4A
I S =-1A,V GS =0V
V DS =-5V, I D =-5A R DS(ON)Static Drain-Source On-Resistance
Forward Transconductance Diode Forward Voltage
I DSS µA Gate Threshold Voltage V DS =V GS I D =-250µA V DS =-24V, V GS =0V
V DS =0V, V GS =±20V Zero Gate Voltage Drain Current Gate-Body leakage current P-CHANNEL: Electrical Characteristics (T J =25°C unless otherwise noted)STATIC PARAMETERS Parameter
Conditions Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I F =-5A, dI/dt=100A/µs
Drain-Source Breakdown Voltage On state drain current
I D =-250µA, V GS =0V V GS =-4.5V, V DS =-5V V GS =-10V, I D =-5A
Reverse Transfer Capacitance I F =-5A, dI/dt=100A/µs
A: The value of R θJA is measured with the device mounted on 1in 2
FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2
FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The SOA curve provides a single pulse rating.Rev 4: Jan 2009
Vds
Charge
Gate Charge Test Circuit & Waveform
Diode R V Vdd V dd V Resistive Sw itching Test C ircuit & W aveform s
V 90%
10%。