晶元芯片规格书
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If =10uA If =350mA Vr=5V If =350mA If =350mA
Min.Fra Baidu bibliotek
Typ.
Max.
Unit
Vf1 Vf2 Ir d
Δ
1.6 3.5 3.8 2.0 465 25 185 220 255 475
V V μA nm nm mW
Po
H13
If =350mA
H14
220
Note: (1) ESD protection during chip handling is recommended. (2) Basically, the wavelength span is 10nm; however, customers’ special requirements are also welcome. (3) Radiant flux is determined by using a Au-plated TO-can header without an encapsulant. (4) Radiant flux measurement allows a tolerance of 15%.
Characteristic Curves:
Fig.1-Relative Luminous Intensity vs. Forward Current Fig.2- Forward Current vs. Forward Voltage
Fig.3-Relative Intensity (@350mA) vs. Ambient Temperature
Symbol
Condition
Ta=25ºC Ta=25ºC --chip chip-on-tape/storage chip-on-tape/transportation ---
Rating
450 5 115 -40 ~ +85 0 ~ 40 -20 ~ +65 280(<10sec)
Unit
Mechanical Specification:
(1) Dimension Chip size : 38 mil x 38 mil (965±25μm x 965±25μm) Thickness :5.9 mil (150 ± 10 µm) P bonding pad x 2 : 3.9 mil (100 ± 10 µm) N bonding pad x 2 : 4.1 mil (105 ± 10 µm) (2) Metallization P electrode : Au alloy N electrode : Au alloy Backside metal : Au alloy
P
N
N
P-electrode N-electrode N-electrode Sapphire-substrate
Electro-optical Characteristics at 25 oC: (1)
Parameter Forward voltage Reverse current Dominant wavelength(2) Spectral half-width Radiant flux (3)(4) Symbol Condition
InGaN Venus Blue LED Chip
Features:
High radiant flux Long operation life Lambertian radiation
ES-CABHV38
Applications:
Replacement lamps Architectural lighting Residential lighting
1/2
CC-200810-B
Absolute Maximum Ratings:
Parameter
Forward DC current Reverse voltage Junction temperature Storage temperature Temperature during packaging
COPYRIGHT ©2010 Epistar Corporation. All Rights Reserved. 2/2 CC-200810-B
mA V o C o C o C o C o C
If Vr Tj Tstg ---
Note: Maximum ratings are package dependent. The above maximum ratings were determined using a Metal Core Printed Circuit Board (MCPCB) without an encapsulant. Stresses in excess of the absolute maximum ratings such as forward current and junction temperature may cause damage to the LED.
Fig.4-Forward Voltage (@350mA) vs. Ambient Temperature
Fig.5-Dominant Wavelength(@20mA) vs. Ambient Temperature
Fig.6 Maximum Driving Forward DC Current vs. Ambient Temperature (Derating based on Tj max. = 115ºC)
Min.Fra Baidu bibliotek
Typ.
Max.
Unit
Vf1 Vf2 Ir d
Δ
1.6 3.5 3.8 2.0 465 25 185 220 255 475
V V μA nm nm mW
Po
H13
If =350mA
H14
220
Note: (1) ESD protection during chip handling is recommended. (2) Basically, the wavelength span is 10nm; however, customers’ special requirements are also welcome. (3) Radiant flux is determined by using a Au-plated TO-can header without an encapsulant. (4) Radiant flux measurement allows a tolerance of 15%.
Characteristic Curves:
Fig.1-Relative Luminous Intensity vs. Forward Current Fig.2- Forward Current vs. Forward Voltage
Fig.3-Relative Intensity (@350mA) vs. Ambient Temperature
Symbol
Condition
Ta=25ºC Ta=25ºC --chip chip-on-tape/storage chip-on-tape/transportation ---
Rating
450 5 115 -40 ~ +85 0 ~ 40 -20 ~ +65 280(<10sec)
Unit
Mechanical Specification:
(1) Dimension Chip size : 38 mil x 38 mil (965±25μm x 965±25μm) Thickness :5.9 mil (150 ± 10 µm) P bonding pad x 2 : 3.9 mil (100 ± 10 µm) N bonding pad x 2 : 4.1 mil (105 ± 10 µm) (2) Metallization P electrode : Au alloy N electrode : Au alloy Backside metal : Au alloy
P
N
N
P-electrode N-electrode N-electrode Sapphire-substrate
Electro-optical Characteristics at 25 oC: (1)
Parameter Forward voltage Reverse current Dominant wavelength(2) Spectral half-width Radiant flux (3)(4) Symbol Condition
InGaN Venus Blue LED Chip
Features:
High radiant flux Long operation life Lambertian radiation
ES-CABHV38
Applications:
Replacement lamps Architectural lighting Residential lighting
1/2
CC-200810-B
Absolute Maximum Ratings:
Parameter
Forward DC current Reverse voltage Junction temperature Storage temperature Temperature during packaging
COPYRIGHT ©2010 Epistar Corporation. All Rights Reserved. 2/2 CC-200810-B
mA V o C o C o C o C o C
If Vr Tj Tstg ---
Note: Maximum ratings are package dependent. The above maximum ratings were determined using a Metal Core Printed Circuit Board (MCPCB) without an encapsulant. Stresses in excess of the absolute maximum ratings such as forward current and junction temperature may cause damage to the LED.
Fig.4-Forward Voltage (@350mA) vs. Ambient Temperature
Fig.5-Dominant Wavelength(@20mA) vs. Ambient Temperature
Fig.6 Maximum Driving Forward DC Current vs. Ambient Temperature (Derating based on Tj max. = 115ºC)