BSF053N03LT G中文资料

ValueUnitBSF053N03LT GMaximum ratings, at T j=25 °C, unless otherwise specifiedParameter Symbol Conditions Unit Power dissipation P tot T C=25 °C42WT A=25 °C,R thJA=58 K/W2)2.2Operating and storage temperature T j, T stg-40 ... 150°C IEC climatic category; DIN IEC 68-155/150/56Parameter Symbol Conditions Unitmin.typ.max. Thermal characteristicsThermal resistance, junction - case R thJC--3K/W Device on PCB R thJA 6 cm2 cooling area2)--58 Electrical characteristics, at T j=25 °C, unless otherwise specifiedStatic characteristicsDrain-source breakdown voltage V(BR)DSS V GS=0 V, I D=1 mA30--V Gate threshold voltage V GS(th)V DS=V GS, I D=250 µA1- 2.2Zero gate voltage drain current I DSS V DS=30 V, V GS=0 V,T j=25 °C-0.11µAV DS=30 V, V GS=0 V,T j=125 °C-10100Gate-source leakage current I GSS V GS=20 V, V DS=0 V-10100nA Drain-source on-state resistance R DS(on)V GS=4.5 V, I D=25 A-7.18.9mΩDrain-source on-state resistance R DS(on)V GS=10 V, I D=30 A- 4.4 5.3Gate resistance R G-0.5-ΩTransconductance g fs |V DS|>2|I D|R DS(on)max,I D=30 A3265-S3) See figure 3 for more detailed informationValue Values2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air.BSF053N03LT GParameterSymbol ConditionsUnitmin.typ.max.Dynamic characteristics Input capacitance C iss -20002700pFOutput capacitanceC oss -700930Reverse transfer capacitance C rss -91-Turn-on delay time t d(on)- 4.2-ns Rise timet r - 4.0-Turn-off delay time t d(off)-19-Fall timet f- 3.4-Gate Charge Characteristics 5)Gate to source charge Q gs - 6.3-nCGate charge at threshold Q g(th)- 3.1-Gate to drain charge Q gd - 4.1-Switching charge Q sw -7.2-Gate charge total Q g -1418Gate plateau voltage V plateau - 3.2-V Gate charge totalQ gV DD =15 V, I D =30 A, V GS =0 to 10 V -29-Gate charge total, sync. FET Q g(sync)V DS =0.1 V, V GS =0 to 4.5 V -12-nCOutput charge Q ossV DD =15 V, V GS =0 V -16-Reverse DiodeDiode continuous forward current I S --38ADiode pulse current I S,pulse --284Diode forward voltageV SDV GS =0 V, I F =30 A, T j =25 °C -0.83VReverse recovery chargeQ rr V R =15 V, I F =I S , d i F /d t =400 A/µs--28nC5)See figure 16 for gate charge parameter definition4) See figure 13 for more detailed informationT C =25 °CValues V GS =0 V, V DS =15 V, f =1 MHzV DD =15 V, V GS =10 V, I D =30 A, R G =1.6 ΩV DD =15 V, I D =30 A, V GS =0 to 4.5 VPG-TDSON-8: OutlineBSF053N03LT G Package Outline CanPAKPG-TDSON-8: TapeDimensions in mmBSF053N03LT GDimensions in mmRaccomended stencil thikness 150 µm元器件交易网BSF053N03LT GPublished byInfineon Technologies AG81726 Munich, Germany© 2007 Infineon Technologies AGAll Rights Reserved.Legal DisclaimerThe information given in this document shall in no event be regarded as a guarantee ofconditions or characteristics. With respect to any examples or hints given herein, any typicalvalues stated herein and/or any information regarding the application of the device,Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,including without limitation, warranties of non-infringement of intellectual property rightsof any third party.InformationFor further information on technology, delivery terms and conditions and prices, pleasecontact the nearest Infineon Technologies Office().WarningsDue to technical requirements, components may contain dangerous substances. For informationon the types in question, please contact the nearest Infineon Technologies Office.Infineon Technologies components may be used in life-support devices or systems only withthe express written approval of Infineon Technologies, if a failure of such components canreasonably be expected to cause the failure of that life-support device or system or to affectthe safety or effectiveness of that device or system. Life support devices or systems areintended to be implanted in the human body or to support and/or maintain and sustainand/or protect human life. If they fail, it is reasonable to assume that the health of the useror other persons may be endangered.Rev. 1.0page 112008-01-18。