资料T1
T1载波与E1载波-精品资料-精品资料
T1载波是美国、加拿大、日本和新加坡使用的标准载波。
而其他国家(欧洲国家)都采用E1载波作为标准载波。
一、T1载波(T1 Carrier )T1载波是专用电话连接、时分多路数字传输设施。
T1 线路实际上是由24个单独的通道组成的,每个通道支持 64K 比特/秒的传输速度,其中数据速率为56Kb/s。
【工作原理】:Bell系统的T1载波利用脉码调制PCM和时分TDM技术,使24路采样声音信号复用一个通道。
(1)当T1系统用于模拟传输时,多路复用24路话音信道,每条话音信道输出:7bit数据+1bit控制复用(2)当T1系统完全用于数字传输时,仅23条信道用于数据传输,第24条信道用于同步模式。
【帧结构】:24路采样声音信号,每路采样用7位编码,再加上1位控制信号(即每路占用8位),24路后再增加1位帧同步位;因此每一个帧包含193位,且每一帧用 125us时间传送。
则:(1) T1载波支持的数据传输速率为 1.544Mbps (即193bit/125us=1.544Mbps)(2)每个通道支持的数据速率为 56Kb/s ,传输速度为64Kb/s因为传输速度= 1.544Mbps/24=64Kb/s;而每路的8位中,只要7位是用于用户数据,所以数据速率=7/8*64=56Kb/s(3)T1载波开销所占比例为13% 。
因为一帧193bit中,168bit(24×7)用于用户数据,25bit(193-168)用于开销。
所以开销所占比例=25bit/193bit≈13%【其他】:大多数的电话公司只允许用户购买这些被称为部分 T1 接入的单独通道的一部分。
T1 载波开发于20世纪60年代,其现在以未屏蔽的双绞线电缆上,以成对的方式执行全双工通讯制。
T1是4线电路,两条线用于发送,两条线用于接收。
T1线路上电压为-135V。
T1电路可以承载话音或数据。
它的使用决定了不同的T1业务、帧格式和线路格式。
医学统计学等级资料分析
资料仅供参考,不当之处,请联系改正。
8.2 两样本比较的秩和检验
检验假设
H0 :A、B两组等级分布相同; H1 :A、B两组等级分布不同(相互偏离)。 =0.05。
8
资料仅供参考,不当之处,请联系改正。
基本思想
如果H0 成立,即两组分布位置相同, 则A组的实
际秩和应接近理论秩和n1(N+1)/2; (B组的实际秩和应接近理论秩和n2(N+1)/2)。
P<0.01,按 =0.05水准,拒绝H0 ,接受H1,差异有统计学
意义。可认为复方猪胆胶囊治疗老年性慢性支气管炎喘息型 与单纯型的疗效有差别。
18
资料仅供参考,不当之处,请联系改正。
8.3 多组比较的秩和检验
Kruskal-Wallis法 先对所有数据编秩;
求秩和T
计算 H 统计量; 查 H 界值表,或2界值表,界定 P 值; 作出结论。
1 2 4.5 4.5 4.5 8.5
B组:
+ ++ ++ ++ +++ +++
6 8 9 10 11 12
4.5 8.5 8.5 8.5 11.5 11.5
5
资料仅供参考,不当之处,请联系改正。
秩和
A组: - 、、+、+、+、 ++ 秩和: 1 2 4.5 4.5 4.5 8.5
TA=25
B组: +、++、++、++、+++、+++ 秩和: 4.5 8.5 8.5 8.5 11.5 11.5
MM3Z5V1T1中文资料
MM3Z2V4T1 SERIESZener Voltage Regulators 200 mW SOD−323 Surface MountThis series of Zener diodes is packaged in a SOD−323 surface mount package that has a power dissipation of 200 mW. They are designed to provide voltage regulation protection and are especially attractive in situations where space is at a premium. They are well suited for applications such as cellular phones, hand held portables, and high density PC boards.Specification Features:•Standard Zener Breakdown V oltage Range − 2.4 V to 75 V •Steady State Power Rating of 200 mW•Small Body Outline Dimensions:0.067″ x 0.049″(1.7 mm x 1.25 mm)•Low Body Height: 0.035″ (0.9 mm)•Package Weight: 4.507 mg/unit•ESD Rating of Class 3 (>16 kV) per Human Body Model•Pb−Free Package is AvailableMechanical Characteristics:CASE:V oid-free, transfer-molded plasticFINISH:All external surfaces are corrosion resistantMAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: 260°C for 10 SecondsLEADS:Plated with Pb−Sn or Sn only (Pb−Free)POLARITY:Cathode indicated by polarity bandFLAMMABILITY RATING:UL 94 V−0MOUNTING POSITION:AnyMAXIMUM RATINGSSee specific marking information in the device marking column of the Electrical Characteristics table on page 3 of this data sheet.DEVICE MARKING INFORMATIONELECTRICAL CHARACTERISTICS(T A = 25°C unless otherwise noted,V= 0.9 V Max. @ I = 10 mA for all types)ZZ Z T , D Y N A M I C I M P E D A N C E ()Ω100101.0C , C A P A C I T A N C E (p F )V Z , NOMINAL ZENER VOLTAGE (V)Figure 3. Typical Capacitance V Z , NOMINAL ZENER VOLTAGE (V)Figure 4. Typical Leakage CurrentV Z , ZENER VOLTAGE (V)101.00.10.01I Z , Z E N E R C U R R E N T (m A )V Z , ZENER VOLTAGE (V)Figure 5. Zener Voltage versus Zener Current(V Z Up to 12 V)Figure 6. Zener Voltage versus Zener Current(12 V to 75 V)1010.10.01I Z , Z E N E R C U R R E N T (m A )TEMPERATURE (°C)25010040200P O W E R D I S S I P A T I O N (%)50751001251508060Figure 7. Steady State Power DeratingPACKAGE DIMENSIONSSOD−323CASE 477−02ISSUE DSTYLE 1:PIN 1.CATHODE 2.ANODEǒmm inchesǓSCALE 10:1*For additional information on our Pb−Free strategy and solderingdetails, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.SOLDERING FOOTPRINT*NOTES:1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.2.CONTROLLING DIMENSION: MILLIMETERS.3.LEAD THICKNESS SPECIFIED PER L/F DRAWING WITH SOLDER PLATING.4.DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS.5.DIMENSION L IS MEASURED FROM END OF RADIUS.DIM MIN MAX MIN MAX INCHESMILLIMETERS A 1.60 1.800.0630.071B 1.15 1.350.0450.053C 0.80 1.000.0310.039D 0.250.400.0100.016E 0.15 REF 0.006 REF H 0.000.100.0000.004J 0.0890.1770.00350.0070K 2.30 2.700.0910.106NOTE 3L0.075−−−0.003−−−ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.PUBLICATION ORDERING INFORMATION。
T1和E1基础知识资料
1T线路基础要理解T线路,就不得不对TDM(Time-Division Multiplexing,时分复用)技术有所了解。
在没有TDM技术之前,用户一旦需要从网络服务商那里得到某种端到端的服务就需要专门申请一条线路来部署网络。
很明显,这是不合算的。
因为这种端到端的服务通常是按传输距离计费的,而不是按实际使用的网络带宽来收费的。
但采用了TDM技术之后,就没有这么麻烦了。
只要用户在以前与对应网络服务商建立了端到端的专用线路,下次在需要其他服务时,就不必另外配置端到端的网络链路了,因为它可以直接复用在原来的专用线路中,如图6-1所示。
这其实就是共享线路,即“复用”的意义,也就是T线路的技术所在。
而TDM则可以把复用在一条线路的多条业务链路以时间段为单位轮流分配给不同的业务使用,通常在业务不是很繁忙,或者业务流量不是很大的情况下,对各业务的影响是非常小的,特别是对非实时的业务,如数据查询、文件浏览、数据传输等。
它节省了用户大笔的网络接入费用,因此受到了用户的青睐。
T线路是专用线路,用户使用前必须向网络服务提供商(NSP,一般是电信公司)申请。
用户首先从电信局在每个地点之间租用一条专用线路,然后安装管理这些地点间的分组通信流动的交换设备。
它之所以被称为专用网,是因为用户的设备直接控制着每个租用线路地点的通信情况。
与此相反,分组交换技术,例如,帧中继、交换式多兆位数据服务(SMDS)和异步传输模式(ATM),在散列技术的支持下,提供任何地点对任何地点的连接。
这时,一个分组是一个完整的、被编址的数据包,它被转发通过分组交换散列网络上的中继器,直到抵达它的目的地。
1.T线路级别划分在T线路中,根据数据速率和信道的多少,可划分为T1、T2、T3这3级,也就是TDM复用级别。
不过在正式介绍以上3种复用级别前,还要对一种被称为“标准数字服务速率”的术语有所了解。
因为以上3种复用级别就是根据这个标准数字服务速率来划分的。
小天才t1有同步教辅资料
小天才t1有同步教辅资料
小天才T1是一款专为中国学生量身定做的同步教辅资料,它旨在为学
生提供最完善的课程学习资源,打造多元化的课程体系,协助学生实现大
数据时代的智慧科学学习方式的转变!
小天才T1的特点是能够与学生量身定制,针对学生的学习需求,提供
更有特色的教辅材料,针对不同科目设计不同类型的学习,覆盖各个学科。
小天才T1同步教辅资料包含语文、数学、外语和科学等四大龙头学科,以及其他科学类、信息及文化技术类。
它可以帮助学生从多角度准备和领
会各科目,并针对知识点制定一系列学习计划,助学生规划学习进度。
小天才T1同步教辅资料的专业性也得到了认可,它的学习模式是让学
生随机记忆法、选择法、填空法、多选题、定式练习、解答题等,提升学
生思维能力,而且知识点研究深入,考试题库及时保持更新,做到学科与
高考紧密结合,试题设计权威,助学生在考试中取得理想的结果。
另外,小天才T1同步教辅资料的资讯化特点及课程信息的汇总处理能力,让学生可以清晰地把握每門学科的重要性,也特别为学生提供各项考
试信息,指导学生备考,非常的实用。
综上所述,小天才T1同步教辅资料可以说是对中国学生学习资源的巨
大提升,它更加注重学习效率,竭力帮助学生取得理想的考试成绩,并且,它在教学方法、教学内容以及各种辅助服务方面,也得到了学生和老师的
普遍认可,受到了越来越多的人的喜爱。
Si9910DY-T1中文资料
Adaptive Power MOSFET Driver 1FEATURESD dv/dt and di/dt Control D Undervoltage Protection D Short-Circuit ProtectionD t rr Shoot-Through Current Limiting D Low Quiescent Current D CMOS Compatible InputsD Compatible with Wide Range of MOSFET Devices D Bootstrap and Charge Pump Compatible (High-Side Drive)DESCRIPTIONThe Si9910 Power MOSFET driver provides optimized gate drive signals, protection circuitry and logic level interface. Very low quiescent current is provided by a CMOS buffer and a high-current emitter-follower output stage. This efficiency allows operation in high-voltage bridge applications with “bootstrap” or “charge-pump” floating power supply techniques.The non-inverting output configuration minimizes current drain for an n-channel “on” state. The logic input is internally diode clamped to allow simple pull-down in high-side drives.Fault protection circuitry senses an undervoltage or output short-circuit condition and disables the power MOSFET.Addition of one external resistor limits maximum di/dt of the external Power MOSFET . A fast feedback circuit may be used to limit shoot-through current during t rr (diode reverse recovery time) in a bridge configuration.The Si9910 is available in 8-pin plastic DIP and SOIC packages, and are specified over the industrial, D suffix (−40to 85_C) temperature range. In SOIC-8 packaging both standard and lead (Pb)-free options are available.FUNCTIONAL BLOCK DIAGRAMV DDINPUT1.Patent Number 484116.ABSOLUTE MAXIMUM RATINGSVoltages Referenced to V SS PinV DD Supply Range −0.3 V to 18 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Pin 1, 4, 5, 7, 8−0.3 V to V DD + 0.3 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Pin 2−0.7 V to V DD + 0.3 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Input Current "20 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Peak Current (I pk )1 A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Storage Temperature −65 to 150_C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating Temperature −40 to 85_C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Junction Temperature (T J )150_C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Power Dissipation (Package)a8-Pin SOIC (Y Suffix)b 700 mW . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8-Pin Plastic DIP (J Suffix)b 700 mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Notesa.Device mounted with all leads soldered or welded to PC board.b.Derate 5.6 mW/_C above 25_C.SPECIFICATIONS aTest ConditionsLimitsParameterSymbolUnless Otherwise SpecifiedV DD 10.8 V to 16.5 VT A = OperatingTemperature RangeMin cTyp bMax cUnitInputHigh Level Input Voltage V IH 0.70 x V DD7.4Low Level Input Voltage V IL 6.00.35 x V DDVInput Voltage HysteresisV h0.90 2.03.0High Level Input Current I IHV IN = V DD "1Low Level Input Current IILV IN = 0 V"1m A OutputHigh Level Output Voltage V OH I OH = −200 mA V DD −310.7Low Level Output Voltage V OL I OL = 200 mA1.33Undervoltage Lockout V UVLO 8.39.210.6I SENSE Pin ThresholdV TH Max I S = 2 mA, Input High100 mV Change on Drain0.50.660.8VVoltage Drain-Source Maximum V DS Input High 8.39.110.2Input Current for V DS Input I VDS 1220.0m A Peak Output Source Current I OS+1A Peak Output Sink CurrentI OS −−1SupplySupply Range V DD 10.816.5V I DD1Output High, No Load 0.11Supply CurrentI DD2Output Low, No Load100500m ADynamicPropagation Delay Time Low to High Level t PLH 120Propagation Delay Time High to Low Level t PHL 135Rise Time t r C L = 2000 pF50nsFall Timet f 35Overcurrent Sense Delay (V DS )t DS 1m S Input CapacitanceC in5pF Notesa.Refer to PROCESS OPTION FLOWCHART for additional information.b.Typical values are for DESIGN AID ONLY , not guaranteed nor subject to production testing.c.The algebraic convention whereby the most negative value is a minimum and the most positive a maximum.AC TESTING CONDITIONSIN (IN = L)OUTV DD V SS V OH V OLPIN CONFIGURATIONS AND ORDERING INFORMATIONV DS PULL-UP INPUT PULL −DOWN V DD V SS DRAINI SENSESOIC-85678Top View2341PDIP-8V DS PULL-UP INPUT Pull-DOWN V DD V SS DRAINI SENSETop View56782341ORDERING INFORMATIONPart NumberTemperature Range PackageSi9910DY Si9910DY -T1SOIC-8Si9910DY -T1—E3−40 to 85_CSi9910DJ PDIP 8Si9910DJ-T1PDIP-8PIN DESCRIPTIONPin 1: V DSPin 1 or V DS is a sense input for the maximum source-drain voltage limit. Two microseconds after a high transition on input pin 2, an internal timer enables the V DS(max) sense circuitry. A catastrophic overcurrent condition, excessive on-resistance,or insufficient gate-drive voltage can be sensed by limiting the maximum voltage drop across the power MOSFET. An external resistor (R3) is required to protect pin 1 from overvoltage during the MOSFET “off” condition. Exceeding V DS(max) latches the Si9910 “off.” Drive is re-enabled on the next positive- going input on pin 2. If pin 1 is not used, it must be connected to pin 6 (V SS ).Pin 2: INPUTA non-inverting, Schmidt trigger input controls the state of the MOSFET gate-drive outputs and enables the protection logic.When the input is low (v V IL ), V DD is monitored for an undervoltage condition (insufficiently charged bootstrap capacitor). If an undervoltage (v V DD(min)) condition exists,the driver will ignore a turn-on input signal. An undervoltage (v V DD(min)) condition during an “on” state will not be sensed.Pin 3: V DDV DD supplies power for the driver’s internal circuitry and charging current for the power MOSFET’s gate capacitance.The Si9910 minimizes the internal I DD in the “on” state (gate-drive outputs high) allowing a “floating” power supply to be provided by charge pump or bootstrap techniques.Pin 4: DRAINDrain is an analog input to the internal dv/dt limiting circuitry.An external capacitor (C1) must be used to protect the input from exposure to the high-voltage (“off” state) drain and to set the power MOSFET’s maximum rate of dv/dt. If dv/dt feedback is not used, pin 4 must be left open.Pin 5: I SENSEI SENSE in combination with an external resistor (R 1)protects the power MOSFET from potentially catastrophic peak currents. I SENSE is an analog feedback that limits current during the power MOSFET’s transition to an “on” state. It is intended to protect power MOSFETs (in a half-bridge arrangement) from “shoot-through” current, resulting from excess di/dt and t rr of flyback diodes or from logic timing overlap. An 0.8-V drop across (R1) should indicate a current level that is approximately four times the maximum allowable load current. When the I SENSE input is not used, it should be tied to pin 6 (V SS ).Pin 6: V SSV SS is the driver’s ground return pin. The applications diagram illustrates the connection of V SS for source-referenced“floating” applications (half-bridge, high-side) and ground-referenced applications (half-bridge, low-side).Pin 7: PULL-DOWN Pin 8: PULL-UPPull-up and pull-down outputs collectively provide the power MOSFET gate with charging and discharging currents. Turn “on” or “off” di/dt can be limited by adding resistance (R 2) in series with the appropriate output.APPLICATIONS“Floating” High-Side Drive ApplicationsAs demonstrated in Figure 1, the Si9910 is intended for use as both a ground-referenced gate driver and as a “high-side”or source-referenced gate driver in half-bridge applications.Several features of the Si9910 permit its use in half-bridge high-side drive applications.A simple and inexpensive method of isolating a floating supply to power the Si9910 in high-side driver applications had to be provided. Therefore, the Si9910 was designed to be compatible with two of the most commonly used floating supply techniques: the bootstrap and the charge pump. Both of these techniques have limitations when used alone. A properly designed bootstrap circuit can provide low-impedance drive which minimizes transition losses and the charge pump circuit provides static operation.The Si9910 is configured to take advantage of either floating supply technique if the application is not sensitive to their particular limitations, or both techniques if switching losses must be minimized and static operation is necessary. The schematic above illustrates both the charge pump and bootstrap circuits used in conjunction with an Si9910 in a high-side driver application.Input signal level shifting is accomplished with a passive pull-up (R4) and n-channel MOSFET (Q2) for pull-down in applications below 500 V. T otal node capacitance defines the value of R4 needed to guarantee an input transition rate which safely exceeds the maximum dv/dt rate of the output half-bridge. Using level-shift devices with higher current capabilities may necessitate the addition of current-limiting components such as R5.Bootstrap Undervoltage LockoutWhen using a bootstrap capacitor as a high-side floating supply, care must be taken to ensure time is available to recharge the bootstrap capacitor prior to turn-on of the high-side MOSFET. As a catastrophic protection against abnormal conditions such as start-up, loss of power, etc., an internal voltage monitor has been included which monitors the bootstrap voltage when the Si9910 is in the low state. The Si9910 will not respond to a high input signal until the voltage on the bootstrap capacitor is sufficient to fully enhance the power MOSFET gate. For more details, please refer to Application Note AN705.APPLICATION CIRCUITFIGURE 1.High-Voltage Half-Bridge with Si9910 Drivers。
TelecomTraining(T1 E1)接口网络变压器资料
T1E1 REQUIREMENTS
ቤተ መጻሕፍቲ ባይዱ
T1: 1544 kbit/second
– Calculate leakage for risetime and overshoot – Pulse Template risetime is approximately from -0.27T to -0.15T; or .12T (where T is 648nS) = 78nS. – Using ½ of this (39nS) equal to 2π(LsCd)1/2 we get a value of Ls= 3.8uH (using Cd = 10pF) – Most IC manufacturer’s specify less than 1.0 uH
T1E1 REQUIREMENTS
T3: 44736 kbit/second Homework for next week: – Using this section of the G.703; what is the minimum inductance needed for this pulse?
T1E1 REQUIREMENTS
SUMMARY
HIERARCHY OF REQUIREMENTS
– G.703 PULSE TEMPLATES – IC MANUFACTURER’S SPECFICIATIONS – MODEM MANUFACTURER’S MODIFICATIONS
– Section 11
OTHER DATA RATES
T1E1 REQUIREMENTS
T1: 1544 kbit/second
– Section 5 of G.703 – Pulse Template given to aid in transformer and circuit design. – Need additional information, because scale is normalized.
t1j贴片三级管资料
t1j贴片三级管资料贴片三极管指的是一种电流控制电流的半导体器件,在电路中起着信号的放大作用和无点触作用。
贴片三极管得自身优点也很多,即结构牢固、体积小,可以为pcb板节省空间、寿命长、损耗小等独有的优势。
对于贴片三极管而言有一个参数是我们必须熟知的,即电流的放大系数,这也是贴片三极管选型的时重要参考指标。
贴片三极管的应用贴片三极管常用于开关电源电路、高频振荡电路、驱动电路、模数转换电路、脉冲电路及输出电路等。
如果加在贴片三极管发射结的电压大于pn结的导通电压时,并且管子的基极电流已经增大到一定值时,集电极就不会再随基电极的增大而增大了,只会在某个数值附近不在变化。
不论是贴片三极管还是插件三极管其功能都是一样的,不同的只是其封装,目前贴片三极管比插件三极管更有优势,因为贴片三极管的体积更小,同时也省去了人工插装的程序,怎么选择还是要根据自己实际情况而定。
它最主要的功能是电流放大(模拟电路)和开关作用(数字电路)。
三极管由两个PN结构成,共用的一个电极成为三极管的基极(用字母b表示)。
其他的两个电极成为集电极(用字母c表示)和发射极(用字母e表示)。
由于不同的组合方式,形成了一种是NPN型的三极管,另一种是PNP型的三极管。
三极管大都是塑料封装或金属封装,常见三极管的外观,有一个箭头的电极是发射极,箭头朝外的是NPN型三极管,而箭头朝内的是PNP型。
实际上箭头所指的方向是电流的方向。
符号的第一部分“3”表示三极管。
符号的第二部分表示器件的材料和结构:A——PNP型锗材料;B——NPN型锗材料;C——PNP型硅材料;D——NPN型硅材料。
符号的第三部分表示功能:U——光电管;K——开关管;X——低频小功率管;G——高频小功率管;D——低频大功率管;A——高频大功率管。
另外,3DJ型为场效应管,BT 打头的表示半导体特殊元件。
如:3DG12B、3AX21。
三极管最基本的作用是放大作用,它可以把微弱的电信号变成一定强度的信号,当然这种转换仍然遵循能量守恒,它只是把电源的能量转换成信号的能量罢了。
雅思剑桥13t1p2阅读
雅思剑桥13t1p2阅读《剑桥雅思13》是雅思考试的一本备考资料,其中的阅读部分是考生需要重点准备的部分之一。
在第一套阅读材料中,题目为Task 1,Passage 2。
该篇阅读材料主要讲述了关于人类行为和动物行为之间的相似性和差异性。
首先,该篇阅读材料提到了人类和动物在某些行为方面的相似性。
例如,人类和某些动物都会表现出社交行为,如建立群体和进行合作。
这种社交行为有助于维持群体的稳定和生存。
此外,人类和动物都会在寻找食物和保护自己方面展示类似的行为模式。
然而,该篇阅读材料也指出了人类和动物在行为方面的差异性。
人类具有独特的智力和语言能力,这使得我们能够进行复杂的思考、创造和传递信息。
相比之下,动物的智力和语言能力相对有限,它们主要通过本能和简单的声音或动作进行沟通。
此外,该篇阅读材料还提到了人类和动物在道德行为方面的差异。
人类具有道德意识和道德判断能力,能够区分对错并做出相应的行为选择。
然而,动物的道德行为主要基于本能和基本的社交规则,缺乏深层次的道德思考。
除了相似性和差异性,该篇阅读材料还涉及到了一些相关的研究和实验。
例如,科学家通过观察动物的行为和进行实验,来研究动物的智力和社交行为。
这些研究有助于我们更好地了解人类和动物之间的关系和差异。
总的来说,雅思剑桥13的阅读部分第一套题目第二篇文章主要讨论了人类行为和动物行为之间的相似性和差异性。
通过对社交行为、智力、语言能力和道德行为等方面的比较,我们可以更全面地了解人类和动物的行为特点。
同时,该篇文章还提到了相关的研究和实验,为我们深入探讨这一领域提供了一定的参考。
2SC5012-T1中文资料
©1993Document No. P10400EJ2V0DS00 (2nd edition)(Previous No. TD-2412)Date Published July 1995 P Printed in JapanHIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR4 PINS SUPER MINI MOLDFEATURES•Small Package•High Gain Bandwidth Product (f T = 9 GHz TYP.)•Low Noise, High Gain •Low Voltage OperationORDERING INFORMATIONPARTQUANTITY PACKING STYLENUMBER2SC5012-T1 3 Kpcs/Reel.Embossed tape 8 mm wide.Pin 3 (Base), Pin 4 (Emitter) face to perforation side of the tape.2SC5012-T2 3 Kpcs/Reel.Embossed tape 8 mm wide.Pin1 (Collector), Pin2 (Emitter) face to perforation side of the tape.*Please contact with responsible NEC person, if you require evaluation sample. Unit sample quantity shall be 50 pcs.(Part No.: 2SC5012)ABSOLUTE MAXIMUM RATINGS (T A = 25 ˚C)Collector to Base Voltage V CBO 20V Collector to Emitter Voltage V CEO 10V Emitter to Base Voltage V EBO 1.5V Collector Current I C 65mA Total Power Dissipation P T 150mW Junction Temperature T j 150˚C Storage TemperatureT stg–65 to +150˚CCaution; Electrostatic Sensitive Device.ELECTRICAL CHARACTERISTICS (T A = 25 ˚C)CHARACTERISTIC SYMBOL MIN.TYP.MAX.UNIT TEST CONDITION Collector Cutoff Current I CBO 1.0µA V CB = 10 V, I E = 0Emitter Cutoff Current I EBO 1.0µA V EB = 1 V, I C = 0DC Current Gain h FE50100250V CE = 8 V, I C = 20 mA*1Gain Bandwidth Product f T9.0GHz V CE = 8 V, I C = 20 mAFeed-back Capacitance C re0.250.8pF V CB = 10 V, I E = 0, f = 1 MHz*2 Insertion Power Gain|S21e|21315dB V CE = 8 V, I C = 20 mA, f = 1.0 GHz Noise Figure NF 1.2 2.5dB V CE = 8 V, I C = 7 mA, f = 1.0 GHz*1Pulse Measurement; PW ≤ 350 µs, Duty Cycle ≤ 2 % Pulsed.*2Measured with 3 terminals bridge, Emitter and Case should be grounded.h FE ClassificationRank EB FB GBMarking R36R37R38h FE50 to 10080 to 160125 to 25023TYPICAL CHARACTERISTICS (T A = 25 ˚C)TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATUREP T - T o t a l P o w e r D i s s p a t i o n - m W T A - Ambient Temperature - ˚CCOLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE I C - C o l l e c t o r C u r r e n t - m A 50V BE - Base to Emitter Voltage - VCOLLECTOR CURRENT vs.COLLECTOR TO EMITTER VOLTAGEI C - C o l l e c t o r C u r r e n t - m A 30 V CE - Collector to Emitter Voltage - V DC CURRENT GAIN vs. COLLECTOR CURRENTh F E - D C C u r r e n t G a i n I C - Collector Current - mAGAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENTf T - G a i n B a n d w i d t h P r o d u c t - G H z I C - Collector Current - mAINSERTION POWER GAIN vs. COLLECTOR CURRENT|S 21e |2 - I n s e r t i o n P o w e r G a i n - d B 1 I C - Collector Current - mA20010050 100150 00.51.040 30 20 10V CE = 8 V201028 12500200 1100 1020 5010100V CE = 8 V10 81 6 02 45 10 50 100V CE = 8 V f = 1 GHz 20 0105 10 50 100V CE = 8 V f = 1 GHz4 6 102220 204NOISE FIGURE vs.COLLECTOR CURRENTN F - N o i s e F i g u r e - d B I C - Collector Current - mAMAXIMUM AVAILABLE GAIN/INSERTION POWER GAIN vs. FREQUENCYM A G - M a x i m u m A v a i l a b l e G a i n - d B |S 21e |2 - I n s e r t i o n P o w e r G a i n - d B 0.1f - Frequency - GHz5 41 3 01 25 10 50V CE = 8 V f = 1 GHz50 0 10 0.5 1.05.020 30 40 FEED-BACK CAPACITANCE vs. COLLECTOR TO BASE VOLTAGEC r e - F e e d -b a c k C a p a c i t a n c e - p F V CB - Collector to Base Voltage - V2.01.010.50.10.25 10 20 50f = 1 MHz 2 220S-PARAMETERV CE = 8 V, I C = 20 mAFREQUENCY S11S21S12S22f (MHz)MAG ANG MAG ANG MAG ANG MAG ANG100.00.589–57.834.077143.4.01660.0.826–22.7200.00.486–95.224.310121.8.02256.3.644–30.4300.00.436–119.118.108109.7.02859.4.543–32.3400.00.411–137.114.077101.8.03148.4.470–31.9500.00.395–149.611.60095.5.03756.9.430–32.1600.00.398–158.19.82691.1.04060.9.412–31.9700.00.395–166.58.54086.9.04563.1.388–30.4800.00.397–172.97.48283.1.05157.9.372–31.3900.00.401–179.1 6.69380.0.05766.1.360–32.81000.00.407175.4 6.06976.6.06161.4.358–31.81100.00.407170.1 5.48373.9.06659.3.342–33.21200.00.407167.6 5.01971.3.06959.3.334–34.81300.00.420162.3 4.64468.9.07661.8.317–36.01400.00.412160.0 4.33866.1.07761.2.330–37.31500.00.433156.2 4.05263.4.08358.7.313–39.01600.00.432153.4 3.77761.2.08861.4.310–41.41700.00.455151.2 3.57958.8.09660.0.297–41.71800.00.456146.7 3.37356.5.09959.3.296–42.11900.00.453145.9 3.20854.8.10160.4.311–44.82000.00.463143.2 3.06152.5.10659.9.298–49.92100.00.475141.0 2.91749.8.11656.0.287–49.52200.00.486138.6 2.80147.2.11959.9.303–53.32300.00.481136.8 2.67645.2.12555.2.290–58.22400.00.497133.4 2.57343.4.12555.8.268–56.82500.00.502132.5 2.46940.7.13254.0.273–59.72600.00.511130.8 2.40338.9.14752.8.290–59.62700.00.508129.1 2.30637.2.14654.3.269–67.52800.00.504126.7 2.22833.8.14750.0.271–71.72900.00.509125.7 2.14632.5.15951.0.273–66.73000.00.514123.0 2.06829.6.16146.5.289–73.2V CE = 3 V, I C = 5 mAFREQUENCY S11S21S12S22f (MHz)MAG ANG MAG ANG MAG ANG MAG ANG100.00.826–29.514.854160.0.02478.6.953–13.4200.00.752–56.013.074142.7.03962.0.850–24.2300.00.682–77.711.233129.3.05154.3.754–31.9400.00.627–95.29.484119.1.05948.6.664–36.2500.00.575–111.18.193110.4.06645.3.586–39.3600.00.555–122.67.199104.1.07141.2.531–41.7700.00.536–134.3 6.41198.1.07540.8.492–42.3800.00.524–142.8 5.68392.9.07839.9.452–45.0900.00.517–150.5 5.13688.9.08341.8.425–45.41000.00.512–158.6 4.70284.5.08343.4.411–45.31100.00.504–164.5 4.29380.9.08641.0.395–47.51200.00.501–169.3 3.92577.7.09341.8.382–47.81300.00.501–175.3 3.66174.4.09642.2.361–49.41400.00.505–178.9 3.42471.3.09343.2.351–50.21500.00.504175.0 3.20468.1.09942.0.331–52.61600.00.512171.4 3.00965.2.10341.1.330–53.01700.00.530167.9 2.85862.6.11044.3.319–54.71800.00.529164.3 2.69860.0.11043.8.332–56.51900.00.529161.1 2.57957.7.11343.5.315–58.42000.00.543158.3 2.45554.6.11843.8.318–61.32100.00.536153.8 2.32551.0.12245.0.313–64.02200.00.552151.0 2.21748.0.12842.4.300–67.82300.00.552149.3 2.11946.0.13041.5.294–67.72400.00.548145.6 2.05744.4.13542.6.288–69.62500.00.560143.8 1.96941.0.13744.7.290–74.72600.00.572140.8 1.91338.9.14041.9.279–75.02700.00.572138.3 1.83237.3.14940.6.291–78.02800.00.562136.4 1.77534.4.15342.9.290–82.72900.00.571135.0 1.72832.8.15840.1.295–82.13000.00.588132.8 1.65130.1.16439.5.287–86.45S-PARAMETERV CE = 3 V, I C = 3 mAFREQUENCY S11S21S12S22f (MHz)MAG ANG MAG ANG MAG ANG MAG ANG100.00.887–22.89.939164.2.02478.7.973–9.8200.00.836–44.69.201149.5.04467.2.912–18.1300.00.782–63.08.316137.2.06057.2.847–25.2400.00.724–79.77.309127.1.06852.2.772–29.6500.00.666–95.1 6.543117.6.07847.5.697–34.0600.00.642–107.2 5.870110.6.08640.1.640–36.8700.00.610–119.1 5.313104.0.09136.8.607–38.3800.00.592–128.2 4.76098.2.09236.4.563–40.8900.00.579–137.4 4.34993.5.09434.7.535–42.0 1000.00.563–145.9 4.00788.5.09632.8.510–42.4 1100.00.556–153.1 3.67784.4.10032.5.488–43.9 1200.00.546–158.5 3.36480.6.09932.1.475–46.0 1300.00.545–165.0 3.15776.9.10333.0.452–47.0 1400.00.544–169.5 2.96073.6.10032.3.449–49.1 1500.00.543–176.2 2.77569.9.10330.6.427–50.0 1600.00.552–179.9 2.60566.8.10432.8.424–51.1 1700.00.561175.7 2.48763.7.10532.6.414–52.3 1800.00.561171.1 2.34960.9.11332.6.411–55.0 1900.00.561168.6 2.23758.4.11132.9.406–57.3 2000.00.580164.0 2.13855.0.12033.7.397–60.1 2100.00.569159.2 2.03251.3.11433.3.403–62.3 2200.00.572156.0 1.93648.1.11934.7.395–64.7 2300.00.574152.8 1.86046.0.12134.6.386–66.2 2400.00.580150.6 1.79743.5.11737.4.382–67.8 2500.00.594147.6 1.72740.2.12635.5.382–71.4 2600.00.596144.7 1.66838.4.13236.2.371–71.6 2700.00.604142.5 1.61236.6.12938.1.373–76.4 2800.00.584140.3 1.56733.1.13738.3.378–78.8 2900.00.603138.6 1.50631.9.13536.4.379–79.6 3000.00.594135.0 1.43228.6.14737.3.380–84.5 V CE = 3 V, I C = 1 mAFREQUENCY S11S21S12S22f (MHz)MAG ANG MAG ANG MAG ANG MAG ANG100.00.968–14.4 3.598169.7.02577.5.987–4.9200.00.942–29.1 3.497159.2.04775.0.971–9.9300.00.918–42.4 3.370149.6.07265.0.952–14.3400.00.882–55.8 3.169140.6.08557.8.918–18.4500.00.838–68.1 3.015131.3.10151.5.882–22.2600.00.825–79.9 2.850124.0.11446.3.848–25.2700.00.789–90.8 2.702116.6.12241.6.823–28.0800.00.770–100.8 2.505109.4.13235.5.788–31.1900.00.740–109.9 2.352103.7.13831.4.757–32.8 1000.00.722–119.0 2.22597.6.13826.9.747–34.8 1100.00.703–127.3 2.07792.5.13925.8.720–37.2 1200.00.692–134.3 1.93087.2.14423.0.703–39.2 1300.00.678–142.1 1.83182.6.14618.7.682–40.6 1400.00.674–147.6 1.74078.2.14117.1.681–43.0 1500.00.662–154.5 1.64473.7.13715.1.655–45.1 1600.00.665–160.7 1.55269.6.13613.0.644–46.6 1700.00.673–166.6 1.50266.0.13712.0.640–48.4 1800.00.666–171.6 1.42061.9.13610.0.641–51.1 1900.00.667–175.3 1.36059.0.12810.0.629–53.3 2000.00.677179.3 1.30155.1.1248.6.626–55.5 2100.00.671173.9 1.24550.8.1229.4.616–58.8 2200.00.673169.5 1.18246.7.1167.5.618–60.9 2300.00.673166.2 1.14544.5.11811.5.613–63.4 2400.00.669162.5 1.09842.0.1078.2.607–65.8 2500.00.683159.6 1.05738.1.10613.2.603–69.0 2600.00.689155.6 1.03035.7.10614.1.596–69.5 2700.00.695152.4.98633.7.10818.2.599–72.9 2800.00.675149.7.96529.9.10116.0.613–77.4 2900.00.687146.9.92928.8.09916.1.600–77.8 3000.00.674143.3.88424.9.10918.0.600–81.9 6No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document.NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others.While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features.NEC devices are classified into the following three quality grades:“Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based ona customer designated “quality assurance program“ for a specific application. The recommended applicationsof a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application.Standard:Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronicequipment and industrial robotsSpecial:Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designedfor life support)Specific:Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc.The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books.If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance.Anti-radioactive design is not implemented in this product.M4 94.11 8。
塑胶产品T1及修改模具后样板检测办法规定
塑胶产品T1及修改模具后样板检测办法规定
当塑胶模具在检验OK的情况,送至成型厂家以符合生产标准的注塑机台试模。
当调试至适合正常的成型参数,注塑成型的塑胶样板我们视为T的OK样板。
工程在针对T1的初始样板,做以下几个工作的检查:
一:从一线试模人员那里去的第一手资料:
1.包含模具在吊装,运输。
上下模。
打固定码仔,接冷却水是否存在不顺畅,或者有遮挡物阻扰
2.模具在试产过程中模具动作是否正确,及流畅
3.是否存在因设计不合理,造成很多塑件的缺陷
二:对照3D产品图,核对产品是否存在特征缺陷:
1.产品与3D图对照是否有漏做现象
2.产品的包R及过渡菱角是否清晰
3.有无做错产品特征,及位置尺寸严重不对
4.对照2D图进行产品的尺寸检测.a.产品的外形尺寸.b产品的装配位形状尺寸及位置尺寸.
5.已知装配关系的零件经行初次装配,检查装配情况
三.产品外观:
1.产品夹线是否有断差
2.分型面,及镶入件是否有毛边,披风
3.产品表面的光洁度是否达到开模客户的要求..抛光,省光,还是出加工痕迹
4.产品表面是否存在拖花,拉伤痕迹
5.产品是否存在因困气引起产品烧焦,或者成型不足
6.产品顶出是否有顶出力不够,造成顶白及顶高
7.产品是否有省模不够有拉白,及粘模
8.产品表面是否有流痕,结合线明显,
9.产品是否因压力不足或者流道及进胶口太小,造成产品表面缩水,凹陷。
10.透明件内里不出现气泡,及气纹
四:工程师在检验产品发现上述问题,请用PPT格式出修改模具资料。
MMSD301T1中文资料
Figure 4. Forward Voltage
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
元器件交易网
TYPICAL CHARACTERISTICS MMSD701T1
2.0 CT, TOTAL CAPACITANCE (pF) f = 1.0 MHz 1.6 500 MMSD701T1 MMSD701T1 400
Figure 2. Minority Carrier Lifetime
10 MMSD301T1 1.0 TA = 100°C
100 MMSD301T1 IF, FORWARD CURRENT (mA) TA = – 40°C 10 TA = 85°C
IR, REVERSE LEAKAGE ( m A)
MMSD301T1 MMSD701T1
t , MINORITY CARRIER LIFETIME (ps)
ቤተ መጻሕፍቲ ባይዱ
KRAKAUER METHOD 300
1.2
0.8
200
0.4
100
0
0 0 5.0 10 15 20 25 30 35 VR, REVERSE VOLTAGE (VOLTS) 40 45 50 0 10 20 30 50 70 40 60 IF, FORWARD CURRENT (mA) 80 90 100
1 Cathode 2 Anode
MMSD301T1 MMSD701T1
Motorola Preferred Devices
2 1
CASE 425–04, STYLE 1 SOD–123
MAXIMUM RATINGS
Si4946EY-T1中文资料
Single Pulse Power 50
40
30
20 10
0 0.01
0.1
1
Time (sec)
10
30
2 1 Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Effective Transient Thermal Impedance
0.06
ID = 4.5 A
TJ = 175_C
TJ = 25_C
0.04 0.02
VGS(th) Variance (V)
1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD - Source-to-Drain Voltage (V)
Threshold Voltage 0.4
0.2
Maximum Power Dissipationa Operating Junction and Storage Temperature Range
TA = 25_C TA = 70_C
TA = 25_C TA = 70_C
VDS VGS
ID IDM IS
PD TJ, Tstg
60 "20 4.5 3.8 30
0.055
W
0.055
0.075
13
S
0.9
1.2
V
19
30
4
nC
3
1
3.6
W
13
20
11
20
36
60
ns
11
20
35
T1航站楼简介
P2-出发大厅一楼19号门对面
P3-出发大厅一楼28号门对面 P4-A到达A10号门出门转右过天桥
B到达B10号门出门转左过天桥
P5-B到达B3号门出门转右
2-6
T1航站楼有四个贵宾厅;
1号贵宾厅-P1停车场旁 2号贵宾厅-B13号门出门转左 3号贵宾厅-P5停车场旁 4号贵宾厅-A10出门转右
W1出口位于B到达B3号门旁 W1-对应行李转盘数为;2,4,6,8 W1-对应到达的航空公司有CA和SC
W2出口位于B到达B5号门旁 W2-对应行李转盘数为;8,10 12,14,16 W2-对应到达的航空公司;HU, PN,GS(天津),GX(北部湾),JD,8L
W3出口位于B到达B11号门旁 W3-对应的行李转盘数为;18,20,22,24 W3-对应的到达的航空公司有;KY,ZH,HO, 9C,GJ(长龙),EU
E1出口位于A到达A4号门旁 E1-对应的行李转盘;1,3,5,7, 9,11 E1-对应到达的是属于T1航站楼所有 直达的国E3-对应的行李转盘;15,17,19,21 E3-对应的到达航空公司;MU,FM,AQ
2-5
白云机场T1航站楼
T1航站楼一共有 个停车场
注意;贵宾厅旅客一般都会有短信通知 具体属于哪个贵宾厅和具体的位置
3
各类配套设施
1,员工工号牌 2,春风服务飘带 3,电脑(航查系统,INFOA系统,IAS系统) 4,柜台交接本和资料夹 5,对讲 6,摄像头 7,春风服务三个指示牌 8,花盆和医疗险 7,防爆钢叉 8,灭火器和防毒面具
1-1
1-2
:
:三楼1-16 一楼17-36
出发大厅三楼
出 发 大 厅 一 楼
T0T1四种工作模式文档资料
当M0=0,M1=0时,工作在方式0 方式0的特点:为13位的计数器 13位计数器的组成:由THX的低5位和THX的
高8位组成。 计数器的进位及溢出:当TLX的低5位溢出时,
则向THX进位。当THX溢出时,则由硬件置 一TFX,从而发出中断请求。
1
C/T位控制T0和T1的工作模式
7
工作方式3
注意:T0可以工作在方式3,而T1则不能工作 在方式3,因为T1工作在方式3时相当于 TR1=0,停止计数。
8
工作在方式3下的T0 课本123页
在方式3,T0被分为两个8位的计数器:TL0和 TH0.
(1)TL0计数器:由T0的控制位来进行控制, 可以对外部脉冲计数,并且可以对内部时钟 进行计数,从而实现定时。
参考119页 TMOD寄存器和121页框图 以定时器/计数器T1举例说明: (1)TMOD寄存器高四位中的C/T=0时,T1
工作在定时器模式,计数信号来源于单片机 系统内部,即:系统时钟的12分频。 (2)TMOD寄存器高四位中的C/T=1时,T1 工作在计数器模式,计数信号来源于T1引脚, 即:P3.5引脚。
(2)TH0计数器:由T1的控制位来进行控制, 只能对内部时钟进行计数,不能对外部信号 进行计数,因此只能定时。
9
பைடு நூலகம்
T0工作在方式3时T1的工作方式 123页
注意:由于T0工作在方式0时,T0被分成TL0和 TH0两个计数器来分别工作,同时,TH0计数器的 工作是由T1的TR1和TF1来进行控制的,因此, T0工作在方式3时,势必会对T1的工作产生影响。 一言以蔽之:由于T0工作在方式3时占用了T1的TR1 位和TF1位,因此T1不能再用来定时了,因此此时 T1可以工作在方式0、1、2,用来产生串行通信所 需要的时钟信号(波特率)。
idata t1入库操作流程
idata t1入库操作流程下载温馨提示:该文档是我店铺精心编制而成,希望大家下载以后,能够帮助大家解决实际的问题。
文档下载后可定制随意修改,请根据实际需要进行相应的调整和使用,谢谢!并且,本店铺为大家提供各种各样类型的实用资料,如教育随笔、日记赏析、句子摘抄、古诗大全、经典美文、话题作文、工作总结、词语解析、文案摘录、其他资料等等,如想了解不同资料格式和写法,敬请关注!Download tips: This document is carefully compiled by theeditor. I hope that after you download them,they can help yousolve practical problems. The document can be customized andmodified after downloading,please adjust and use it according toactual needs, thank you!In addition, our shop provides you with various types ofpractical materials,such as educational essays, diaryappreciation,sentence excerpts,ancient poems,classic articles,topic composition,work summary,word parsing,copy excerpts,other materials and so on,want to know different data formats andwriting methods,please pay attention!idata t1 入库操作流程如下:1. 准备工作:确保你有idata t1的入库权限。
t1小波滤波算法
t1小波滤波算法
T1小波滤波算法是一种基于小波变换的信号去噪算法。
其主要思想是将信号分解为多个不同尺度的小波系数,通过对小波系数进行阈值处理来去除噪声,并保留信号的主要特征。
具体来说,T1小波滤波算法的步骤包括:
1. 将原始信号进行小波分解,得到多个尺度的小波系数。
2. 对每个尺度的小波系数进行阈值处理,将小于某个阈值的系数置为0,保留大于等于阈值的系数。
3. 对处理后的小波系数进行小波重构,得到去噪后的信号。
4. 重复上述步骤,直到满足停止准则。
T1小波滤波算法的优点包括:可以有效地去除信号中的噪声,同时保留信号的主要特征;能够处理非平稳信号和非线性信号。
因此,它在信号处理、图像处理、语音识别等领域有广泛的应用。
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苍耳子:又名耳棵。生长在田间、路旁和洼地。三四月份长出小苗,幼苗象黄豆芽,向阳的地方又象向曰葵苗;成年后粗大,叶象心脏形,周围有锯齿,秋后结带硬刺的种子。全棵有毒,幼芽及种子的毒性最大,吃后可造成死亡。
荠菜 荠菜在田边地头,经常能看到星星点点的荠菜花。它的食疗作用是凉血止血、补虚健脾、清热利水。春天摘些荠菜的嫩茎叶或越冬芽,焯过后可凉拌、蘸酱、做汤、炒食,荠菜水饺、荠菜馄饨是春天餐桌上不可缺少的美味,另外还可以做成鲜美的荠菜粥。
婆婆丁 又名蒲公英,它的花粉含有维生素、亚油酸,枝叶中则含胆碱、氨基酸和微量元素。婆婆丁的功能是清热解毒,消肿、利尿,具有抗菌的作用,能激发机体的免疫功能,达到利胆和保肝的作用。 婆婆丁焯过后生吃、炒食或做汤都可以,可拌海蜇皮、炒肉丝;还能配着绿茶、甘草、蜂蜜等,调成一杯能够清热解毒、消肿的婆婆丁绿茶。
薄荷 又叫薄荷菜,可作药用亦可食用。薄荷是散风解热药,它所含的薄荷油是药用的有效成分,常用于防治伤风感冒、咽喉疼痛等。炎热的夏日,薄荷是防暑降温的佳品。 薄荷可做薄荷粥、鲜薄荷豆腐、薄荷鸡脯肉等。
四、种地
【中国原始农业】
种植业和畜牧业的发生
种植业和畜牧业的发生,是从驯化野生动植物开始的。人类在长期的采集渔猎生活中,积累了相当丰富的有关植物和动物的知识。这些知识正是原始人类得以驯化植物和动物的先决条件。一旦由于环境变化引起开辟新的食物来源的需要,原始种植业和畜牧业就会应运而生。中国古史中“神农氏”,正是原始种植业和畜牧业发生时的人物。
一、臭豆腐的做法
1、卤汁:将1/4块嫩豆腐切超小块;所有材料1/4块嫩豆腐、虾酱1大匙(15ML)、温水400CC、盐少许混合搅拌均匀,室温放置两天后即可。
2、臭豆腐:将老豆腐切小块,放入已经做好的卤汁里。8小时以后可用。锅内倒入大量的油,烧至7成热,将腌好的老豆腐入油锅炸至金黄即可
。
3技巧:1、老豆腐放入卤水中可用保鲜膜封起来放冰箱腌制隔夜,这样豆腐不会酸。
曲菜娘子:冬季根不死,春天出芽,长出小苗。叶狭长较厚而硬,边有锯齿,大部分叶子贴着地面生长,秋后抽茎,高0.5—1尺多。籽很小,上有白毛。幼苗容易和曲菜苗相混,但曲菜叶较宽而软,锯齿也不明显。吃了曲菜娘子脸部会变肿。
毒芹:又名野芹菜、白头翁、毒人参。生长在潮湿地方。叶象芹菜叶,夏天开折花,全裸有恶臭。全棵有毒,花的毒性最大,吃后恶心、呕吐、手脚发冷、四肢麻痹,严重的可造成死亡。
苦菜 苦菜又名苦苣菜,茎呈黄白色;叶片为圆状披针形,表面绿色,背面灰绿色;花鲜黄色。苦菜中含有丰富的钾、钙、镁、磷、钠、铁、等元素,能清热、消肿、化淤解毒、凉血止血。苦菜对急性淋巴细胞性白血病、急性及慢性粒细胞白血病都有抑制作用。 苦菜嫩叶可采食,生吃略带苦味,用开水烫一下制熟,苦味可除。苦菜可炒肉、做汤,或加些大豆粉做成小豆腐吃,亦可沸水烫后蘸面酱食用。或做麻酱拌苦菜、苦菜粥等。
2、卤汁可以重复使用。
3、可按个人口味制作各类蘸料,椒盐,辣椒面,番茄酱,麻酱香菜等。
二、酱油的制作方法
1.将豆粕干蒸10分钟左右,加入水400~500kg,水温80~90℃,浸泡豆粕20~30分钟,再将小麦加入浸泡10~15分钟,将麸皮加入开始蒸料,汽压一般在0.15~0.2mpa,保持15~20分钟,将热料倒出。
传说神农氏之前存在包牺氏,“包牺氏没,神农氏作”;“包牺氏之王天下也,……作结绳而为网罟,以佃以渔。”说明当时正处在渔猎阶段,没有农业的发生,可是到了后来,民人众而禽兽少,食物短缺,于是出了神农氏。神农氏“因天之时,分地之利,制耒耜,教民农作。”成为农业的始祖。
中国农业从其产生之始,就是以种植业为中心的。首要的问题是野生植物的驯化。在长期的采集生活中,对各种野生植物的利用价值和栽培方法进行了广泛的试验,逐渐选育出适合人类需要的栽培植物来。从“尝百草”到“播五谷”和“种粟”,就是这一过程的生动反映;而所谓“神农尝百草,一日遇七十毒”,则反映了这个过程的艰难和充满风险。
小根蒜 又名薤白、小根菜,呈不规则卵圆形,表面黄白色或淡黄棕色,底部有突起的鳞茎盘。它的茎叶长得很像蒜,也有葱、蒜的味道,主要吃法有小根蒜拌豆腐,小根蒜白木耳粥、小根蒜炒鸡蛋等。
椿菜 又名香椿芽,营养丰富。据测定:每100克椿菜中含蛋白质9.8克,钙、磷、维生素C的含量在蔬菜中均名列前茅。还含脂肪、粗纤维、铁、胡萝卜素、尼克酸以及香椿素,有特殊的芳香气味,食之鲜美可口,耐人品尝。 香椿的吃法很多,可凉拌、可炒、可煎,还能腌着吃。椿菜还可入药,古医书记载,椿菜性寒,具有涩肠止血、健胃理气、杀虫固精等功效。现代医学研究表明,椿菜煎汁对金黄色葡萄球菌、肺炎球菌、痢疾杆菌、伤寒杆菌、大肠杆菌、绿脓杆菌等都有明显的抑制和杀菌作用。民间有椿菜治病的验方:椿菜烫后用酱油拌食,能开胃、去气滞;与粳米、麻油制成椿菜粥,可治肠炎、痢疾、痔肿等等。
【常见野菜】
马齿苋 又名马齿菜、马齿草、五方草,一般为红褐色,叶片肥厚,象倒卵形。它含有蛋白质硫氨酸、核黄素、抗坏血酸等营养物质。由于其中含酸类物质比较多,所以吃的时候会觉得稍有些酸味。 马齿菜的药用功能是清热解毒,凉血止血,能降低血糖浓度、保持血糖恒定,对糖尿病有一定的作用。它的吃法有很多种,焯过之后炒食、凉拌、做馅都可以。如大蒜拌马齿菜、马齿菜炒鸡蛋、马齿菜馅包子、马齿菜粥等。
野生地:又名猪妈妈、老头喝酒。春天开紫红色花,有的带黄色,花的形状象唇形的芝麻花。根黄色,叶上有毛,有苦味。吃后吐、泻、头晕和昏迷。
毒蘑菇:其种类很多,常见的有①毒伞(又称蒜叶菌、鬼笔鹅膏、绿帽菌)、②褐鳞小伞、③白毒伞、④黑包脚伞、⑤内绿菌、⑥褐脚伞、⑦残托斑毒伞、⑧鬼笔。生长在腐烂的物品上,形状特殊,有象小笔、小伞。颜色鲜艳,有白色、红色、黄色,上述8种都含剧毒。 值得一提的是,蘑菇的颜色、外形、生态等特征与其毒素关没有必然的联系。
蕨菜 又名蕨儿菜、龙头菜,在野菜中比较常见。蕨菜能起到清热滑肠、降气化痰、利尿安神的作用。 蕨菜蕨菜吃起来鲜嫩滑爽,素有“山菜之王”的美誉。蕨菜的食法很多,炒、烧、煨、焖都可以。在现代菜谱中,用蕨菜烹调出的名菜有木须蕨菜、海米蕨菜、肉炒蕨菜、脆皮蕨菜等多种。这些菜肴素以色泽红润、质地软嫩、清香味浓而深受食客的青睐。蕨菜叶呈卷曲状时,说明它比较鲜嫩,老了后叶子就会舒展开来。
【需浸泡】
山药菜、山蒜等一些野菜有微毒,不经浸泡,食后周身不适。这类野菜在煮食前,务必要在清水里浸泡两小时以上进行解毒处理。 ◎树上的野菜不宜炒吃:树上的野菜品种不多,如:刺嫩芽、榆树钱等,这类野菜宜蒸吃或做酱吃。若是炒着吃,即粘又涩,难以下咽。 ◎像马齿苋这样的野菜,用打入鸡蛋的淀粉裹了,炸成椒盐马齿苋,风味更佳。 ◎东风菜适合与荤菜搭配,像东风菜炒肉丝,虾仁炸东风菜,都是不错的选择。
薇菜 富含蛋白质、多种维生素及钾、钙、磷等微量元素,还含有稀有的促脱皮甾酮、鞣质成份,具有抗癌、清热、减肥等功效,并对流感、乙型脑炎等有明显的抑制作用。春天采集粗壮嫩绿的幼叶,经沸水焯后炒食,或搓制薇菜干,也可腌渍,是我国出口的主要野菜品种之一。
刺嫩芽 又叫刺龙芽、乌龙头、乌刺菜、乌鲳、树头菜,含有蛋白质、脂肪、碳水化合物、矿物质、维生素等。嫩芽可做菜、做汤,也可腌渍加工罐头,营养丰富,味道鲜美,风味独特,具有补气、活血、利湿、止痛、补肾等作用。 刺嫩芽(Aralia elata Seem)为落叶小乔木,树干和树枝上长有皮刺。叶为2-3回奇数羽状复叶,伞形花序顶生,淡黄白色、果实球形黑色。学名:龙牙楤木,俗称刺老芽、刺龙牙、霸王菜。在我国主要分布在东北地区。生于针叶或针阔混交林缘、沟边、火烧迹地等。皮与根部可入药,春季4月末5月初在乔木的尖端抽芽发育,待生长到5 -15公分时采集,然后人工将芽包去净。 成分:龙芽楤木的药用价值很高,植株总皂甙含量为20.40%,是人参的2.5倍。对人体有兴奋和强壮作用,对急慢性炎症、各种神经衰弱都有良好的疗效,中医认为龙芽楤木有补气安神,强精滋肾等功能。 刺嫩芽含有蛋白质、脂肪、碳水化合物、矿物质、维生素等。刺嫩芽每百克嫩芽含蛋白质5.4 g,脂肪0.2 g,碳水化合物4.0 g,纤维素1.6 g,核黄素0.26 mg,硫胺素0.19 mg,尼克酸3.2 mg,抗坏血酸12 mg,钠118.2 mg,钙538 mg,镁54.6 mg,铁12.69 mg,锌4.32 mg。嫩芽可做菜、做汤,也可腌渍加工灌头,营养丰富,味道鲜美,风味独特。 其它用途:常食之对于治疗风湿性腰腿痛、糖尿病、肾炎、胃肠溃疡及跌打损伤等有益。 民间用于治腹泄、痢疾等病症,有滋阴润喉作用,对咽痛、下痢、营养不良等症也有治疗作用。
桔梗 又叫明叶菜、和尚帽,其枝端能开出蓝色的小花。我们平常吃的都是桔梗根,它有祛痰镇咳、镇痛、解热、镇静、降血糖、消炎、抗溃疡、抗肿瘤和抑菌的作用。
水芹菜 又叫水芹、河芹。水芹菜是一种多年生草本植物,生长在沼泽地或湿地,它的嫩茎及叶柄供作蔬菜食用。水芹菜中富含多种维生素和无机盐类,其中以钙、磷、铁等含量较高,具有清洁人的血液,降低人的血压和血脂等功效,既是食用又是药用的高档无公害草本蔬菜。水芹菜生长在低洼的水田里,基本不需要治虫,属于纯天然无公害绿色蔬菜。水芹菜的生长期较长,秋冬春都可以随时采收,既可以凉拌食用,也可以与其他荤菜炒煮,亦可做海米炝水芹、水芹炒肉丝、水芹羊肉饺、水芹拌花生仁等。
民间有许多关于毒蘑菇和可食蘑菇的识别方法,这些方法经专家鉴别无一条完全靠得住。因此广大山友在采食蘑菇时,应分外小心,若有疑虑拿不准是否有毒,则坚决不采,不食,以免发生不测。
此外,还有曼陀罗(山茄子)、毛茛(猴蒜)、天南星(蛇玉米)、红心灰菜(落黎)、牛舌棵子、石蒜(野大蒜)等,都有毒,不能食用。
2.打好的料送入曲箱并进行冷却降温至33~35℃。
3.接种制曲、将15kg麸皮与0.3%曲精混合均匀撒入箱内制曲,保证均匀度。