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清华大学运筹学教程胡运权主编课后习题答案

清华大学运筹学教程胡运权主编课后习题答案

8 10
x1 , x2 0
目标函数最优值(下界)为:6.4
17
第18页/共66页
l.7 分别用单纯形法中的大M法和两阶 段法求解下列线性规划问题,并指出属哪—
类解。
max Z 3x1 x2 2x3
x1 x2 x3 6
(1)
st
2x1 2x2
x3 x3
0
2
x j 0(, j 1,,3)
所以最优解为X*=(1,3/2,0,0)T
第11页/共66页
0点
A1点 A2点
max Z 2x1 x2 3x1 5x2 15
(2) st.6x1 2x2 24 x1, x2 0
11
第12页/共66页
第13页/共66页
第14页/共66页
d
x
2

l.5 讨论c
,
上题(1)中,若目标函数变为max Z = d的值如何变化,使该问题可行域的每个
8
第9页/共66页
1.4 分别用图解法和单纯形法求解下述 线性规划问题,并对照指出单纯形表中的各 基可行解对应图解法中可行域的哪一顶点。
max Z 10x1 5x2
(1)
st.35xx11
4 x2 2 x2
9 8
x1, x2 0
9
第10页/共66页
cj
10
5 00
CB
xB
b
x1
x2
max Z x1 x2
(3)
st
6 .
x1 10x2 5 x1
120 10
5 x2 8
唯 一 最 优 解 ,x1 10, x2 6
Z 16
max Z 5x1 6x2 2x1 x2 2

MM5ZxxxST1G Serie Zener Voltage Regulators 500 mW

MM5ZxxxST1G Serie Zener Voltage Regulators 500 mW

MM5ZxxxST1G Series, SZMM5ZxxxST1G Series Zener Voltage Regulators 500 mW SOD−523 Surface MountThis series of Zener diodes is packaged in a SOD−523 surface mount package. They are designed to provide voltage regulation protection and are especially attractive in situations where space is at a premium. They are well suited for applications such as cellular phones, hand held portables, and high density PC boards. Specification Features•Standard Zener Breakdown V oltage Range −2.4 V to 18 V •Steady State Power Rating of 500 mW•Small Body Outline Dimensions:0.047″ x 0.032″ (1.20 mm x 0.80 mm)•Low Body Height: 0.028″ (0.7 mm)•ESD Rating of Class 3 (> 16 kV) per Human Body Model •Tight Tolerance V Z•SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable•These Devices are Pb−Free and are RoHS Compliant*Mechanical CharacteristicsCASE:V oid-free, transfer-molded, thermosetting plasticEpoxy Meets UL 94, V−0LEAD FINISH: 100% Matte Sn (Tin)MOUNTING POSITION:AnyQUALIFIED MAX REFLOW TEMPERATURE: 260°CDevice Meets MSL 1 RequirementsMAXIMUM RATINGSRating Symbol Max UnitTotal Device Dissipation FR−4 Board, (Note 1) @ T A = 25°CDerate above 25°C P D5004.0mWmW/°CThermal Resistance from Junction−to−Ambient (Note 1)R q JA250°C/WJunction and Storage Temperature Range T J, T stg−65 to+150°CStresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.1.FR−4 printed circuit board, single−sided copper, mounting pad 1 cm2.*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.Device Package Shipping†ORDERING INFORMATIONCathode AnodeSee specific marking information in the device marking column of the Electrical Characteristics table on page 2 of this data sheet.DEVICE MARKING INFORMATIONSOD−523CASE 502STYLE 1MARKING DIAGRAMXX= Specific Device CodeM Date Code*G= Pb−Free Package(Note: Microdot may be in either location)*Date Code orientation may vary dependingupon manufacturing location.MM5ZxxxST1G SOD−523(Pb−Free)3,000 /Tape & Reel†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our T ape and Reel Packaging Specifications Brochure, BRD8011/D.SOD−523(Pb−Free)SZMM5ZxxxST1G3,000 /Tape & ReelSOD−523(Pb−Free)SZMM5ZxxxST5G8,000 /Tape & ReelELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted,V F = 0.9 V Max. @ I F = 10 mA for all types) Symbol Parameter V Z Reverse Zener Voltage @ I ZTI ZT Reverse CurrentZZT Maximum Zener Impedance @ I ZTI ZK Reverse CurrentZ ZK Maximum Zener Impedance @ I ZKI R Reverse Leakage Current @ V RV R Reverse VoltageI F Forward CurrentV F Forward Voltage @ I FQ V Z Maximum Temperature Coefficient of V Z C Max. Capacitance @V R = 0 and f = 1 MHzV Figure 1. Zener Voltage RegulatorELECTRICAL CHARACTERISTICS (V F = 0.9 Max @ I F = 10 mA for all types)Device*DeviceMarkingTestCurrentIzt mAZener VoltageVZZ ZK I Z= 1.0mA WMaxZ ZTI Z = IZT@ 10%Mod WMaxMaxIR @ VRd VZ/dt (mV/k)@ I ZT1 = 5 mA C pF Max @V R = 0f = 1 MHzMin Max m A V Min MaxMM5Z2V4ST1G T2 5.0 2.43 2.631000100120 1.0−3.50450MM5Z2V7ST1G T3 5.0 2.67 2.911000100100 1.0−3.50450MM5Z3V3ST1G T5 5.0 3.32 3.53100095 5.0 1.0−3.50450MM5Z3V6ST1G T6 5.0 3.60 3.85100090 5.0 1.0−3.50450MM5Z3V9ST1G T7 5.0 3.89 4.16100090 3.0 1.0−3.5−2.5450MM5Z4V3ST1G T8 5.0 4.17 4.43100090 3.0 1.0−3.50450MM5Z4V7ST1G/T5G T9 5.0 4.55 4.7580080 3.0 2.0−3.50.2260MM5Z5V1ST1G TA 5.0 4.98 5.250060 2.0 2.0−2.7 1.2225MM5Z5V6ST1G TC 5.0 5.49 5.7320040 1.0 2.0−2.0 2.5200MM5Z6V2ST1G TE 5.0 6.06 6.3310010 3.0 4.00.4 3.7185MM5Z6V8ST1G TF 5.0 6.65 6.9316015 2.0 4.0 1.2 4.5155MM5Z7V5ST1G TG 5.07.287.616015 1.0 5.0 2.5 5.3140MM5Z8V2ST1G TH 5.08.028.36160150.7 5.0 3.2 6.2135MM5Z9V1ST1G TK 5.08.859.23160150.5 6.0 3.87.0130MM5Z12VST1G TN 5.011.7412.2480250.18.0 6.010130MM5Z16VST1G TU 5.015.8516.5180400.0511.210.414105MM5Z18VST1G TW 5.017.5618.3580450.0512.612.416100 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.*Include SZ-prefix devices where applicable.TYPICAL CHARACTERISTICSTEMPERATURE (°C)25010040200P O W E R D I S S I P A T I O N (%)50751001251508060Figure 2. Steady State Power DeratingPACKAGE DIMENSIONSSOD −523CASE 502ISSUE ENOTES:1.DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.2.CONTROLLING DIMENSION: MILLIMETERS.3.MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL.4.DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PRO-TRUSIONS, OR GATE BURRS.DIM MIN NOM MAX MILLIMETERS D 1.10 1.20 1.30E 0.700.800.90A 0.500.600.70b 0.250.300.35c 0.070.140.20L 0.30 REF H 1.50 1.60 1.70*For additional information on our Pb −Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.SOLDERING FOOTPRINT*E RECOMMENDEDSIDE VIEW2XBOTTOM VIEWL2L2X2XL20.150.200.25STYLE 1:PIN 1.CATHODE (POLARITY BAND)2.ANODEON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.PUBLICATION ORDERING INFORMATION。

z服装尺码换算参照表

z服装尺码换算参照表

zz服装尺码换算参照表服装尺码换算参照表女装(外衣、裙装、恤衫、上装、套装)标准尺码明细中国(cm) 160-165 / 84-86 165-170 / 88-90 167-172 / 92-96 168-173 / 98-102 170-176 / 106-110 国际XS S M L XL美国 2 4-6 8-10 12-14 16-18欧洲34 34-36 38-40 42 44男装(外衣、恤衫、套装)标准尺码明细中国(cm) 165 / 88-90 170 / 96-98 175 / 108-110 180 / 118-122 185 / 126-130国际S M L XL XXL男装(衬衫)标准尺码明细中国(cm) 36 - 37 38 - 39 40 - 42 43 - 44 45 - 47国际S M L XL XXL男装(裤装)标准尺码明细尺码42 44 46 48 50腰围68 - 72 cm 71 - 76 cm 75 - 80 cm 79 - 84 cm 83 - 88 cm裤度99 cm 101.5 cm 104 cm 106.5 cm 109 cm看不懂的还可以参照下面的:服装尺寸表男仕服装尺码分类小码中码大码加大码身高165 170 175 18032代表腰围为:“2.5尺”33代表腰围为:“2.6尺”34代表腰围为:“2.7尺”36代表腰围为:“2.8尺”38代表腰围为:“2.9尺”40代表腰围为:“3.0尺”42代表腰围为:“3.1尺”44代表腰围为:“3.2尺”50代表腰围为:“3.4尺”52代表腰围为:“3.5尺”54代表腰围为:“3.6尺”4、西服装尺码为:80表示代码为:“145”81表示代码为:“150”82表示代码为:“155”83表示代码为:“160”84表示代码为:“165”85表示代码为:“170”86表示代码为:“175”87表示代码为:“180”88表示代码为:“185”5、衬衣装尺码为:60表示代码为:“38”61表示代码为:“39”62表示代码为:“40”63表示代码为:“41”64表示代码为:“42”65表示代码为:“43”66表示代码为:“44”67表示代码为:“45”68表示代码为:“46”1、上装尺码为:01码表示代码为:“XXS” 02码表示代码为:“XS”03码表示代码为:“S” 04码表示代码为:“M”05码表示代码为:“L” 06码表示代码为:“XL”07码表示代码为:“XXL”2、茄克装尺码为:70表示代码为:“48”(M)71表示代码为:“50”(L)72表示代码为:“52”(XL)73表示代码为:“54”(XXL)3、裤装尺码为:26代表腰围为:“1.9尺” 27代表腰围为:“2.0尺”28代表腰围为:“2.1尺” 29代表腰围为:“2.2尺”30代表腰围为:“2.3尺” 31代表腰围为:“2.4尺”32代表腰围为:“2.5尺” 33代表腰围为:“2.6尺”34代表腰围为:“2.7尺” 36代表腰围为:“2.8尺”38代表腰围为:“2.9尺” 40代表腰围为:“3.0尺”42代表腰围为:“3.1尺” 44代表腰围为:“3.2尺”50代表腰围为:“3.4尺” 52代表腰围为:“3.5尺”54代表腰围为:“3.6尺”4、西服装尺码为:80表示代码为:“145” 81表示代码为:“150”82表示代码为:“155” 83表示代码为:“160”84表示代码为:“165” 85表示代码为:“170”86表示代码为:“175” 87表示代码为:“180”88表示代码为:“185”5、衬衣装尺码为:60表示代码为:“38” 61表示代码为:“39”62表示代码为:“40” 63表示代码为:“41”64表示代码为:“42” 65表示代码为:“43”66表示代码为:“44” 67表示代码为:“45”68表示代码为:“46”日本鞋碼與中國鞋碼對照表22/34 22.5/35 23/3623.5/37 24/38 24.5/3925/39.5 25.5/40 26/40.526.5/41 27/42 27.5/4328/44 28.5/45簡單的計算方法:日本碼X2—12=中國碼美國常用服裝對照碼女士服装外套、裙子、连衣裙和套装的尺码有“女士尺码”(即“普通尺码)与“少女尺码”之分。

XXX《病理学Z》平时作业一

XXX《病理学Z》平时作业一

XXX《病理学Z》平时作业一1.心肌褐色萎缩的褐色主要由脂褐素沉积引起。

2.肝脂肪变性时,肉眼观察是体积增大,包膜紧张,边缘钝,色黄有油腻感。

3.区别死后组织自溶与组织坏死最可靠的根据是病变组织周围有无炎症反应。

4.易发生气性坏疽的是恶性水肿杆菌感染。

5.机化的概念是肉芽组织替代坏死组织或异物的过程。

6.槟榔肝是由于肝小叶中央淤血和外周脂肪变。

7.静脉延续性血栓形成的顺序是白色血栓,混合血栓,红色血栓。

8.肺动脉栓塞的栓子来自静脉系统或右心的血栓脱落。

9.血浆胶体渗透压降低的主要原因是血浆白蛋白减少。

10.急性左心衰竭时肺水肿发生的主要机制是肺静脉回流受阻。

11.休克微循环缺血期微循环灌流的特点是少灌少流,灌少于流。

12.炎症局部的基本病变为变质、渗出、增生。

13.渗出液容易凝固的原因是其中含有较多的纤维蛋白。

14.按炎症渗出性病变反应的顺序,白细胞吞噬排列最后。

15.急性炎症时,组织肿胀的主要原因是渗出物的积聚。

16.干酪性肺炎不属于化脓性炎症。

17.增生性炎的例子包括急性肾小球肾炎。

18.骨肉瘤来源于间叶组织。

19.肿瘤细胞分化程度愈高,则恶性程度愈低。

20.含有两个以上胚层的多种成分、结构混乱的肿瘤称为畸胎瘤。

21.肿瘤的实质是肿瘤细胞。

22.风湿性心肌炎病变的描述是特异性肉芽肿性炎。

23.左心衰竭时发生呼吸困难的主要机制是心脏缺血缺氧。

24.引起肺动脉高压最常见的原因是广泛肺纤维化。

25.原发性肺结核病的原发病灶常位于肺上叶下部或下叶上部靠胸膜处。

26.软组织的结核性“冷脓肿”的本质是液化的干酪样坏死物质。

27.错误的叙述是中央静脉扩张不是肝淤血的原因。

28.一位48岁女性近10年来有反酸、嗳气、上腹部饱胀的症状,伴有规律性上腹痛,空腹发作,夜间更甚,进食可缓解。

最可能的诊断是十二指肠溃疡病。

29.中度慢性肝炎的病理变化主要是桥接坏死。

30.急性重型肝炎的病理变化特点是肝细胞迅速而广泛的坏死。

zxxx_contribute

zxxx_contribute

投稿规范《中小学教师培训》于2007年11月顺利通过中华人民共和国新闻出版总署期刊出版规范检查,成为全国首批出版规范合格期刊。

这标志着我刊在编校及出版工作中迈上了新台阶。

为了进一步适应信息社会对传媒发展的要求,推进期刊标准化建设,加大科研成果推广力度,我刊结合《中华人民共和国国家标准(GB/T 7714—2005):文后参考文献著录规则》以及《中国高等学校社会科学学报编排规范(修订版)》,兼顾CAJ-CD B/T 1-1998及相关期刊编校要求与实践通则,现对本刊投稿作如下规范:一、文稿基本要求字数:5500字以内。

摘要:200字以内,包含与文章等量的主要信息,应说明研究目的、实验方法、结果和最终结论等,而重点是结果和结论。

关键词:3-5个。

基金项目参数:若为课题成果,请加注基金项目参数,如项目主持人、项目名称、项目来源、项目编号等。

作者自然情况:包括出生年月、籍贯、单位、职务或职称、邮政编码、电话或电子邮箱等。

二、参考文献著录引用他人成果的文稿,标注参考文献时,请参阅以下内容:(一)关于文献类型和标志代码,电子文献载体和标志代码表1 文献类型和标志代码表2 电子文献载体和标志代码(二)参考文献表述格式1.专著(包括以各种载体形式出版的普通图书、古籍、多卷书、丛书、辞书、技术报告、会议文集、汇编、标准等)主要责任者.题名:其他题名信息[文献类型标志].其他责任者.版本项.出版地:出版者,出版年:引文页码.示例:[1] 中学化学国家课程标准研制组.义务教育课程标准试验教科书:九年级化学[M].第4版.上海:上海教育出版社,2006:35.[2] 昂温G,昂温P S.外国出版史[M].陈生铮,译.北京:中国书籍出版社,1988:45.2.专著中的析出文献析出文献主要责任者. 析出文献题名[文献类型标志]. 析出文献其他责任者//专著主要责任者.专著题名:其他题名信息.版本项.出版地:出版者,出版年:析出文献的页码.示例:[l] 陈晋镶,张惠民,朱士兴,等. 蓟县震旦亚界研究[M]//中国地质科学院天津地质矿产研究所.中国震旦亚界. 天津:天津科学技术出版社,1980:56-14.[2] 韩吉人. 论职工教育的特点[G]//中国职业教育研究会.职工教育研究论文集.北京:人民教育出版社,1985:90-99.3.报纸、期刊中的文献析出文献主要责任者. 析出文献题名[文献类型标志].连续出版物题名:其他题名信息,年,卷(期):页码.示例:[1] 李晓东,张庆红,叶瑾琳.气候学研究的若干理论问题[J].北京大学学报:自然科学版,1999,35(1):101-106.[2] 谢希德.创造学习的新思路[N].人民日报,1998-12-25(10).4.学位论文主要责任者.题名:其他题名信息[文献类型标志]:[博士/硕士学位论文].保存地:保存者,提交年:引文页码.示例:[1] 李文昊.面向教师专业发展的案例学习支持框架[D]:[博士学位论文].南京:南京师范大学,2006:68.5.电子文献主要责任者.题名:其他题名信息[文献类型标志/文献载体标志]. 出版地:出版者,出版年(更新或修改日期)[引用日期].获取和访问路径.示例:[1] 王明亮.关于中国学术期刊标准化数据库系统工程的进展[EB/OL].[1998-08-16].http://WWW.cajcd.cn/pub/wml.txt/980810-2.Html.。

运筹学1至6章习题参考答案

运筹学1至6章习题参考答案

运筹学1至6章习题参考答案第1章 线性规划1.1 工厂每月生产A 、B 、C 三种产品 ,单件产品的原材料消耗量、设备台时的消耗量、资源限量及单件产品利润如表1-23所示.310和130.试建立该问题的数学模型,使每月利润最大.【解】设x 1、x 2、x 3分别为产品A 、B 、C 的产量,则数学模型为123123123123123max 1014121.5 1.2425003 1.6 1.21400150250260310120130,,0Z x x x x x x x x x x x x x x x =++++≤⎧⎪++≤⎪⎪≤≤⎪⎨≤≤⎪⎪≤≤⎪≥⎪⎩ 1.2 建筑公司需要用5m 长的塑钢材料制作A 、B 两种型号的窗架.两种窗架所需材料规格及数量如表1-24所示:【解设x j (j =1,2,…,10)为第j 种方案使用原材料的根数,则 (1)用料最少数学模型为10112342567368947910min 28002120026002239000,1,2,,10jj j Z x x x x x x x x x x x x x x x x x x j ==⎧+++≥⎪+++≥⎪⎪+++≥⎨⎪+++≥⎪⎪≥=⎩∑ (2)余料最少数学模型为2345681012342567368947910min 0.50.50.52800212002*********0,1,2,,10j Z x x x x x x x x x x x x x x x x x x x x x x x x j =++++++⎧+++≥⎪+++≥⎪⎪+++≥⎨⎪+++≥⎪⎪≥=⎩1.3某企业需要制定1~6月份产品A 的生产与销售计划。

已知产品A 每月底交货,市场需求没有限制,由于仓库容量有限,仓库最多库存产品A1000件,1月初仓库库存200件。

1~6月份产品A 的单件成本与售价如表1-25所示。

(2)当1月初库存量为零并且要求6月底需要库存200件时,模型如何变化。

XXX《医古文Z》平时作业1答案

XXX《医古文Z》平时作业1答案

XXX《医古文Z》平时作业1答案B:逐一C:清晰D:详细E:准确正确答案: B1.在XXX自幼好学,每天记诵千言。

2.以下不能解释为“向所举子业”中的“向”的是:面对。

3.在时下流行的XXX、XXX所定的大观二百九十七方中,时当时正在进行。

4.然而,吾乡的许多医生很少知道这些。

5.然而,吾乡的许多医生能够知道这些。

6.然后,他完全放弃了向所的举子业,专一于医术。

7.简朴诚实坚贞和善。

8.在研究医术方面,他不仅掌握了XXX的传承,还广泛涉猎了XXX、XXX等家的学说。

9.然而,他的性格非常狭窄,自以为是,难以满足。

10.后来,他请求见面,愈发恳切。

11.于是,他面朝北方再次拜见。

12.对于那些有阴虚火动,或阴阳两虚湿热自盛的人,需要斟酌考虑后再使用。

13.他贯穿了《内经》的主旨,以寻找它的旨意。

14.得到了许多见闻,逐一记录下来。

15: 在“苟见枝叶之辞,去本而末是务,辄怒溢颜面,若将XXX”中,“浼”之义为玷污。

16: 在“则依蓍龟为XXX利害”中,“蓍”的正确读音为shī。

17: 在“翁在婺得道学之源委”中,“源委”之义为源流。

18: 在“至于一语一默,一出一处”中,“一”之义为或者。

19: 在“若翁者,殆古所谓直谅多闻之益友”中,“谅”之义为诚实。

20: 在“四方以病来迎者,遂辐辏于道中”中,“辐辏”之义为聚集。

21: “尽去而旧学,非是也”的正确语译是:全部抛弃你过去学的医学知识,因为那些不正确。

22: 在“舍客长XXX过,扁鹊独奇之,常谨遇之”中,“谨遇”之义为恭敬接待。

23: 以下作“眼泪”讲的是涕。

24: 在“有此一者,则重难治也”中,“重”之义为甚。

25: 在“XXX以其言饮药三十日,视见垣一方人”中,“垣”之义为矮墙。

26: 以下除刚会笑的婴儿之外,都不是“曾不可以告咳婴之儿”中“咳婴”之义。

27: 以下除除之外,都有“病愈”之义。

28: “先生得无诞之乎”中,“得无诞之”可以理解为“莫非欺骗我”。

Q345CZ15,Z25钢板,Z向钢板

Q345CZ15,Z25钢板,Z向钢板

Q345CZ15/Z25/Z35是低合金钢板,带Z向性能的低合金钢板GB5313-1985钢结构某些重要构件的厚板,除了要求沿宽度方向和长度方向有较好的力学性能外,同时要求沿厚度方向具有良好的Z向性能,以抵抗层状撕裂或其他相关破坏Q345CZ15/Z25/Z35应用应用于高层建筑,网架钢结构等设备及构件,安钢生产的Z向板,完全等同采用国外标准组织生产各种标准、牌号和规格的Z向钢板,其中【安】【阳】【伟】【光】经销Z向钢板最好,物美价优什么是Z向钢又称“抗层状撕裂钢(lamellar tearing resistant steel)”,即平时所说的Z向性能测试钢。

采用焊接连接的钢结构中,当钢板厚度不小于40 mm且承受沿板厚度方向的拉力时,为避免焊接时产生层状撕裂,需采用抗层状撕裂的钢材(通常简称为“Z向钢”)。

厚板存在层状撕裂问题,故要提出Z向性能测试。

钢板和型钢经过滚轧成型的,一般多高层钢结构所用钢材为热轧成型,热轧可以破坏钢锭的铸造组织,细化钢材的晶粒。

钢锭浇筑时形成的气泡和裂纹,可在高温和压力作用下焊合,从而使钢材的力学性能得到改善。

然而这种改善主要体现在沿轧制方向上,因钢材内部的非金属夹杂物(主要为硫化物、氧化物、硅酸盐等)经过轧压后被压成薄片,仍残留在钢板中(一般与钢板表面平行),而使钢板出现分层(夹层)现象。

这种非金属夹层现象。

使钢材沿厚度方向受拉的性能恶化。

因此钢板在三个方向的机械性能是有差别的:沿轧制方向最好;垂直于轧制方向的性能稍差;沿厚度方向性能又次之。

一般厚钢板较易产生层状撕裂,因为钢板越厚,非金属夹杂缺陷越多,且焊缝也越厚,焊接应力和变形也越大。

为解决这个问题,最好采用Z向钢。

这种钢板是在某一级结构钢(称为母级钢)的基础上,经过特殊冶练、处理的钢材,其含硫量为一般钢材的1/5以下,截面收缩率在15%以上。

钢板沿厚度方向的受力性能(主要为延性性能)称为Z向性能。

钢板的Z 向性能可通过做试样拉伸试验得到,一般用断面收缩率来度量。

答辩记录表(填写范例)

答辩记录表(填写范例)
指导教师签名:XXX2014年03月20日
评分
(P)
XX
评阅教师评阅意见及评分:
同意指导教师意见。
评阅教师签名:XXX2014年03月21日
答辩组意见及评分:
评分(D)
XX
答辩组根据该生的论文质量和答辩中的表现,同意通过该生的毕业论文(设计)
答辩组长签名:XXX2014年03月22日
总分(Hale Waihona Puke )XX□优□良□中
□及格□不及格
毕业设计(论文)成绩评定:
G=25﹪Z+25﹪P+50﹪D
学院毕业设计领导小组组长签名:XXX2014年03月24日
毕业设计(论文)答辩记录
学生姓名
班级
答辩日期
课题名称
自述要点
XXXXXXXXXXXXXXXXXXXXXXXXXXXXXXX
提问问题

回答情况
问题
回答
记录员(签名)
答辩组长(签字)
XXX
毕业设计(论文)成绩评分表
学生姓名
班级
指导教师评语及评分:
评分(Z)
XX
简要概括学生毕业论文(设计)的撰写过程及质量

XXX《医古文Z》平时作业4答案

XXX《医古文Z》平时作业4答案

XXX《医古文Z》平时作业4答案(单选题)1: “辟如滴水之器”中的“辟”属于:A:通假字B:古今字C:异体字D:讹字E:避讳字正确答案: A(单选题)2: “罗遇翁亦甚懽”中的“懽”属于:A:通假字B:古今字C:异体字D:讹字E:避讳字正确答案: C(单选题)3: “国中治穰过于众事”中的“穰”属于:A:通假字B:古今字C:异体字D:讹字E:避讳字正确答案: A(单选题)4: “以八减之齐和煮之”中的“齐”属于:A:通假字B:古今字C:异体字D:讹字E:避讳字正确答案: B(单选题)5: “因五藏之输”中的“输”属于:A:通假字B:古今字C:异体字D:讹字E:避讳字精确谜底: B(单选题)6: “苦四支烦”中的“支”属于:A:通假字B:古今字C:异体字D:讹字E:避讳字正确答案: B(单选题)7: “始皆心服口誉”中“心、口”的活用类型是:A:使动用法B:名词用作动词C:名词用作状语D:名词意动用法E:形容词用作动词精确谜底: C(单选题)8: “又可以医师少之哉”中“少”的活用类型是:A:使动用法B:名词用作动词C:名词用作状语D:名词意动用法E:描述词用作动词正确答案: E(单选题)9: “使人手摸知所在”中“手”的活用类型是:A:名词用作动词B:名词用作状语C:动词使动用法D:名词意动用法E:形容词意动用法精确谜底: BA:名词用作动词B:名词用作状语C:动词使动用法D:名词意动用法E:描述词意动用法正确答案: CA:名词用作动词B:名词用作状语C:名词使动用法D:名词意动用法E:描述词意动用法精确谜底: BB:名词用作状语C:名词使动用法D:名词意动用法E:描述词意动用法精确谜底: A(单项选择题)13: “而何怪”的特殊语序是:A:定语后置B:主谓倒装C:介词宾语前置D:疑问代词作宾语前置E:否认句宾语前置正确答案: D(单选题)14: “中庶子喜方者”的特殊语序是:A:定语后置B:主谓倒装C:介词宾语前置D:疑问代词作宾语前置E:否定句宾语前置正确答案: A(单项选择题)15: “不汗出”的特殊语序是:A:定语后置B:主谓倒装C:介词宾语前置D:疑问代词作宾语前置E:否定句宾语前置正确答案: E(单选题)16: “亲中人有病如成者”的特殊语序是:A:定语后置B:主谓倒装C:介词宾语前置D:疑问代词作宾语前置E:否定句宾语前置精确谜底: A(单项选择题)17: “翁穷日夜是”的特殊语序是:A:定语后置B:主谓倒装C:介词宾语前置D:代词作宾语前置E: “是”作标志的宾语前置正确答案: D(单选题)18: “去本而末是务”的特殊语序是:A:定语后置B:主谓倒装C:介词宾语前置D:代词作宾语前置E: “是”作标志的宾语前置正确答案: E(单项选择题)19: “太子何病”的特殊语序是:A:定语后置B:主谓倒装C:介词宾语前置D:疑问代词作宾语前置E:否定句宾语前置正确答案: D(单项选择题)20: “乡之诸医泥XXX、XXX学者”的特殊语序是:A:定语后置B:主谓倒装C:介词宾语前置D:疑问代词作宾语前置E:否定句宾语前置精确谜底: A(单选题)21: “尽与扁鹊”中“与”的用法是:A:介词,给B:动词,给C:介词,跟D:通“欤”,语气词,呢E:连词,和正确答案: B(单选题)22: “閒与语曰”中“与”的用法是:A:介词,给B:动词,给C:介词,跟D:通“欤”,语气词,呢E:连词,和精确谜底: C(单选题)23:“不出三日必閒”中“閒”的用法是:A:副词,私下B:动词,痊愈C:名词,一会儿D:形容词,空闲E:名词,在……之间精确谜底: B(单选题)24: “君有疾在肠胃閒”中“閒”的用法是:A:副词,私下B:动词,痊愈C:名词,一会儿D:描述词,空闲E:名词,在……之间正确答案: E(单选题)25: “更熨两胁下”中“更”的用法是:A:副词,又B:副词,交替C:副词,互相D:动词,经过E:动词,改变正确答案: B(单选题)26: “太子起坐,更适阴阳”中“更”的用法是:A:副词,又B:副词,交替C:副词,相互D:动词,经过E:动词,改变正确答案: A(单选题)27: “XXX使人问其故”中“故”的用法是:A:副词,特地B:名词,原因C:因果连词,以是D:描述词,原来的E:名词,原先的状况,指健康正确答案: B(单项选择题)28: “已故到谯”中“故”的用法是:A:副词,特别B:名词,原因C:因果连词,以是D:描述词,原来的E:名词,原先的状况,指健康正确答案: A(单项选择题)29: “肉体不能止邪气”中“止”的用法是:A:动词,阻止B:副词,只C:动词,居住D:语气词,无义E:动词,到……去精确谜底: A(单选题)30: “决者至众,不可曲止也”中“止”的用法是:A:动词,阻止B:副词,只C:动词,居住D:语气词,无义E:动词,到……去精确谜底: D(单选题)31: “人之所病,病疾多”中“病”的用法是:A:动词,担心B:名词,疾病C:动词,怨恨D:形容词,病重E:动词,患……病正确答案: A(单选题)32: “太子何病”中“病”的用法是:A:动词,担心B:名词,疾病C:动词,怨恨D:描述词,病重E:动词,患……病精确谜底: E(单选题)33: “当引某许,若至,语人”中“许”的用法是:A:名词,部位B:名词,住处C:动词,赞赏D:动词,赞成E:副词,摆布,表约数精确谜底: A(单选题)34: “食顷,吐出三升许虫”中“许”的用法是:A:名词,部位B:名词,住处C:动词,赞赏D:动词,赞成E:副词,左右,表约数正确答案: E(单选题)35: “行数里,昕卒头眩堕车”中“卒”的用法是:A:动词,完成B:动词,死C:副词,终于D:副词,最终E:通“猝”,副词,突然正确答案: E(单选题)36: “促去可得与家相见,五日卒”中“卒”的用法是:A:动词,完成B:动词,死C:副词,终于D:副词,最终E:通“猝”,副词,突然正确答案: B(单选题)37: “成得药去”中“去”的用法是:A:动词,离开B:动词,除去C:同“弆”,动词,储藏D:动词,到……去E:描述词,曩昔了的正确答案: A(单项选择题)38: “何忍无急去药”中“去”的用法是:A:动词,离开B:动词,除去C:同“弆”,动词,储藏D:动词,到……去E:形容词,过去了的正确答案: C(单项选择题)39: “益闻道德性命之说”中“益”的用法是:A:动词,增长B:副词,逐渐C:副词,愈加D:形容词,有益的E:动词,满出正确答案: B(单项选择题)40: “直谅多闻之良朋”中“益”的用法是:A:动词,增加B:副词,逐步C:副词,愈加D:描述词,有益的E:动词,满出正确答案: D(单项选择题)41: “稍长,从乡师长教师治经”中“治”的用法是:A:动词,进行B:描述词,正常C:动词,研读D:动词,治理E:动词,医治精确谜底: C(单选题)42: “操古方以治今病”中“治”的用法是:A:动词,举行B:形容词,正常C:动词,研读D:动词,治理E:动词,医治正确答案: E(单项选择题)43: “学者多诵而取则焉”中“焉”的用法是:A:兼词,于此B:词尾,……的模样C:语气词,无义D:代词,之E:语气词,呢精确谜底: A(单项选择题)44: “讲道八西岳,复往拜焉”中“焉”的用法是:A:兼词,于此B:词尾,……的样子C:语气词,无义D:代词,之E:语气词,呢正确答案: D(单选题)45: “长XXX亦知XXX非常人也”中的“非常”属于:A:同形词语B:同义复词C:偏义复词D:叠音词E:绵延词正确答案: A(单项选择题)46: “邪气畜积而不得泄”中的“畜积”属于:A:同形词语B:同义复词C:偏义复词D:叠音词E:绵延词精确谜底: B(单项选择题)47: “佗令温汤近热”中的“ 温汤”属于:A:同形词语B:同义复词C:偏义复词D:叠音词E:连绵词精确谜底: A(单项选择题)48: “断肠湔洗”中的“湔洗”属于:A:同形词语B:同义复词C:偏义复词D:叠音词E:连绵词正确答案: B(单选题)49: “又当消息而用之”中的“ 消息”属于:A:同形词语B:同义复词C:偏义复词D:叠音词E:连绵词正确答案: A(单选题)50: “人有邪恶非正之问,则依蓍龟为XXX其利害”中的“利害”属于:A:同形词语B:同义复词C:偏义复词D:叠音词E:绵延词精确谜底: C(单项选择题)51: “要光明如水精”中的“精”属于:A:通假字B:古今字C:异体字D:讹字E:避讳字精确谜底: A(单选题)52: “用嫩桑枝条相拌蒸,出,暴干”中的“暴”属于:A:通假字B:古今字C:异体字D:讹字E:避讳字正确答案: B(单选题)53: “如火薪然”中的“薪”属于:A:通假字B:古今字C:异体字D:讹字E:避讳字正确答案: A(单选题)54: “如火薪然”中的“然”属于:A:通假字B:古今字C:异体字D:讹字E:避讳字精确谜底: BB:名词用作状语C:使动用法D:名词意动用法E:形容词意动用法精确谜底: A(单选题)56: “余欲针除其疾病”中“针”的活用类型是:A:名词用作动词B:名词用作状语C:使动用法D:名词意动用法E:描述词意动用法精确谜底: B(单选题)57: “菊春生夏茂,XXX”中“花、实”的活用类型是:A:名词用作动词B:名词用作状语C:名词使动用法D:名词意动用法E:描述词意动用法正确答案: AB:名词用作状语C:名词使动用法D:名词意动用法E:形容词意动用法正确答案: A(单选题)59: “天覆地载,万物悉备,莫贵于人”中“莫”的用法是:A:副词,不要B:代词,没有什么C:代词,没有人D:名词,通“幕”E:名词,通“膜”正确答案: B(单选题)60: “君王众庶,尽欲全形,形之疾病,莫知其情”中“莫”的用法是:A:副词,不要B:代词,没有什么C:代词,没有人D:名词,通“幕”E:名词,通“膜”精确谜底: C(单项选择题)61: “故针有悬布世界者五”中的“悬布”属于:A:同形词语B:同义复词C:偏义复词D:叠音词E:绵延词正确答案: B(单项选择题)62: “百姓闻之,觉得残贼”中的“残贼”属于:A:同形词语B:同义复词C:偏义复词D:叠音词E:连绵词正确答案: B(单选题)63: “犹慈石取铁”中的“慈”属于:A:通假字B:古今字C:异体字D:讹字E:避讳字正确答案: A(单项选择题)64: “今其手艺晻昧”中的“晻”属于:A:通假字B:古今字C:异体字D:讹字E:避讳字精确谜底: C(单选题)65: “并平脉辨证”中的“平”属于:A:通假字B:古今字C:异体字D:讹字E:避讳字精确谜底: A(单项选择题)66:A:通假字B:古今字C:异体字D:讹字E:避讳字精确谜底: B“多闻博识,知之次也”中的“知”属于:(单项选择题)67: “大济蒸人”中的“蒸”属于:A:通假字B:古今字C:异体字D:讹字E:避讳字精确谜底: A(单选题)68: “兼《灵枢》九卷,迺其数焉”中的“迺”属于:A:通假字B:古今字C:异体字D:讹字E:避讳字正确答案: CB:名词用作状语C:名词意动用法D:形容词使动用法E:描述词意动用法精确谜底: D(单选题)70: “同死生之域”中“同”的活用类型是:A:名词用作动词B:名词用作状语C:名词意动用法D:形容词使动用法E:形容词意动用法正确答案: EB:名词用作状语C:使动用法D:为动用法E:形容词意动用法正确答案: A(单选题)72: “XXX《尚书》”中“序”的活用类型是:A:名词用作动词B:名词用作状语C:使动用法D:为动用法E:形容词意动用法精确谜底: D(单项选择题)73: “惟名利是务”的特殊语序是:A:定语后置B:介词宾语前置C:强调句宾语前置D:否定句宾语前置E:疑问代词作宾语前置正确答案: C(单项选择题)74: “下此以往,未之闻也”的特殊语序是:A:定语后置B:介词宾语前置C:强调句宾语前置D:否认句宾语前置E:疑问代词作宾语前置正确答案: D(单项选择题)75: “盖教之著矣,亦天之假也”中“假”的用法是:A:动词,宽容B:动词,凭借C:动词,借助D:假定连词,假如E:描述词,与“真”相对正确答案: C(单项选择题)76: “倘使天机迅发”中“假”的用法是:A:动词,宽容B:动词,凭借C:动词,借助D:假定连词,假如E:形容词,与“真”相对精确谜底: D(单项选择题)77: “谨拟一法,略效丹溪,未识若何”中“识”的用法是:A:动词,记住B:名词,见解C:动词,认识D:动词,知道E:动词,标识正确答案: D(单项选择题)78:“自非才高识妙,岂能探其理致哉”中“识”的用法是:A:动词,记住B:名词,见解C:动词,认识D:动词,知道E:动词,标识精确谜底: B(单项选择题)79: “余宿尚方术,请事斯语”中“宿”的用法是:A:名词,夜B:动词,留宿C:名词,著名誉的人D:副词,向来E:名词,星宿正确答案: D(单项选择题)80: “有如列宿高悬,奎张稳定”中“宿”的用法是:A:名词,夜B:动词,留宿C:名词,有名望的人D:副词,向来E:名词,星宿正确答案: E(单选题)81: “蒇谋虽属乎生知”中“属”的用法是:A:同“嘱”,动词,叮嘱B:名词,同宗支属关系C:动词,归属D:动词,连接E:名词,品种精确谜底: C(单项选择题)82: “蒇谋虽属乎生知”中“属”的用法是:A:同“嘱”,动词,叮嘱B:名词,同宗支属关系C:动词,归属D:动词,连接E:名词,品种正确答案: D(单选题)83: “告穷归天,束手受败”中的“归天”属于:A:同形词语B:同义复词C:偏义复词D:叠音词E:绵延词精确谜底: A(单项选择题)84: “委付凡医”中的“委付”属于:A:同形词语B:同义复词C:偏义复词D:叠音词E:连绵词精确谜底: B(单项选择题)85: “不刊之书也”中的“不刊”属于:A:同形词语B:同义复词C:偏义复词D:叠音词E:连绵词正确答案: A(单选题)86: “庶以网罗今古”中的“网罗”属于:A:同形词语B:同义复词C:偏义复词D:叠音词E:绵延词正确答案: B(单项选择题)87: “或两论并吞,而都为一目”中的“并吞”属于:A:同形词语B:同义复词C:偏义复词D:叠音词E:连绵词精确谜底: B(单选题)88: “询谋得失,深遂夙心”中的“得失”属于:A:同形词语B:同义复词C:偏义复词D:叠音词E:绵延词精确谜底: C(单选题)89: “繇是覩奥升堂”中的“繇”属于:A:通假字B:古今字C:异体字D:讹字E:避讳字精确谜底: A(单项选择题)90: “苞无限,协惟一”中的“苞”属于:A:通假字B:古今字C:异体字D:讹字E:避讳字精确谜底: A(单选题)91: “则嚣然思食”中的“嚣”属于:A:通假字B:古今字C:异体字D:讹字E:避讳字正确答案: A(单选题)92: “是由XXX抱将死之疾”中的“由”属于:A:通假字B:古今字C:异体字D:讹字E:避讳字正确答案: A(单选题)93: “气有余则和其经渠以安之”中“安”的活用类型是:A:使动用法B:名词用作动词C:名词用作状语D:名词意动用法E:形容词意动用法正确答案: AA:使动用法B:名词用作动词C:名词用作状语D:名词意动用法E:描述词意动用法精确谜底: E(单选题)95: “明能烛幽,二竖遁矣”中“烛”的活用类型是:A:使动用法B:名词用作动词C:名词用作状语D:名词意动用法E:形容词意动用法正确答案: B(单选题)96: “并是书且弁髦置之者”中“弁髦”的活用类型是:A:使动用法B:名词用作动词C:名词用作状语D:名词意动用法E:形容词意动用法正确答案: C(单选题)97: “神仙虽不目见”中“目”的活用类型是:A:使动用法B:名词用作动词C:名词用作状语D:名词意动用法E:形容词意动用法正确答案: C(单选题)98: “外物以累心不存”中“累”的活用类型是:A:使动用法B:名词用作动词C:名词用作状语D:名词意动用法E:形容词意动用法精确谜底: A(单项选择题)99: “于今是赖”的特殊语序是:A:主谓倒装B: “是”作前置宾语C:介词宾语前置D:否认句宾语前置E:疑问代词作宾语前置精确谜底: B(单选题)100: “XXX之行,宜其用心”的特殊语序是:A:主谓倒装B: “是”作前置宾语C:介词宾语前置D:否定句宾语前置E:疑问代词作宾语前置精确谜底: A(单选题)1:“辟如滴水之器”中的“辟”属于:A:通假字B:古今字C:异体字D:讹字E:避讳字精确谜底: A(单选题)2:“XXX亦甚懽”中的“懽”属于:A:通假字B:古今字C:异体字D:讹字E:避讳字正确答案: C(单选题)3:“国中治穰过于众事”中的“穰”属于:A:通假字B:古今字C:异体字D:讹字E:避讳字正确答案: A(单选题)4:“以八减之齐和煮之”中的“齐”属于:A:通假字B:古今字C:异体字D:讹字E:避讳字正确答案: B(单选题)5:“因五藏之输”中的“输”属于:A:通假字B:古今字C:异体字D:讹字E:避讳字正确答案: B(单项选择题)6:“苦四支烦”中的“支”属于:A:通假字B:古今字C:异体字D:讹字E:避讳字精确谜底: B(单选题)7:“始皆心服口誉”中“心、口”的活用类型是:A:使动用法B:名词用作动词C:名词用作状语D:名词意动用法E:描述词用作动词正确答案: CB:名词用作动词C:名词用作状语D:名词意动用法E:形容词用作动词精确谜底: E(单选题)9:“使人手摸知所在”中“手”的活用类型是:A:名词用作动词B:名词用作状语C:动词使动用法D:名词意动用法E:描述词意动用法正确答案: BA:名词用作动词B:名词用作状语C:动词使动用法D:名词意动用法E:形容词意动用法正确答案: C(单选题)11:“太祖累书呼”中“书”的活用类型是:A:名词用作动词B:名词用作状语C:名词使动用法D:名词意动用法E:形容词意动用法正确答案: B(单选题)12:“今所患勿药可愈”中“药”的活用类型是:A:名词用作动词B:名词用作状语C:名词使动用法D:名词意动用法E:描述词意动用法正确答案: A(单选题)13:“而何怪”的特殊语序是:A:定语后置B:主谓倒装C:介词宾语前置D:疑问代词作宾语前置E:否认句宾语前置精确谜底: D(单项选择题)14:“中庶子喜方者”的特殊语序是:A:定语后置B:主谓倒装C:介词宾语前置D:疑问代词作宾语前置E:否定句宾语前置正确答案: A(单选题)15:“不汗出”的特殊语序是:A:定语后置B:主谓倒装C:介词宾语前置D:疑问代词作宾语前置E:否定句宾语前置正确答案: E(单项选择题)16:“亲中人有病如成者”的特殊语序是:A:定语后置B:主谓倒装C:介词宾语前置D:疑问代词作宾语前置E:否定句宾语前置正确答案: A(单选题)17:“翁穷昼夜是”的特殊语序是:A:定语后置B:主谓倒装C:介词宾语前置D:代词作宾语前置E:“是”作标记的宾语前置正确答案: D(单项选择题)18:“去本而末是务”的特殊语序是:A:定语后置B:主谓倒装C:介词宾语前置D:代词作宾语前置E:“是”作标志的宾语前置正确答案: E(单项选择题)19:“太子何病”的特殊语序是:A:定语后置B:主谓倒装C:介词宾语前置D:疑问代词作宾语前置E:否定句宾语前置精确谜底: D(单选题)20:“乡之诸医泥XXX、XXX学者”的特殊语序是:A:定语后置B:主谓倒装C:介词宾语前置D:疑问代词作宾语前置E:否定句宾语前置正确答案: A(单选题)21:“尽与扁鹊”中“与”的用法是:A:介词,给B:动词,给C:介词,跟D:通“欤”,语气词,呢E:连词,和正确答案: B(单选题)22:“閒与语曰”中“与”的用法是:A:介词,给B:动词,给C:介词,跟D:通“欤”,语气词,呢E:连词,和正确答案: C(单选题)23:“不出三日必閒”中“閒”的用法是:A:副词,私下B:动词,康复C:名词,一会儿D:形容词,空闲E:名词,在……之间精确谜底: B(单选题)24:“君有疾在肠胃閒”中“閒”的用法是:A:副词,私下B:动词,痊愈C:名词,一会儿D:描述词,空闲E:名词,在……之间精确谜底: E(单项选择题)25:“更熨两胁下”中“更”的用法是:A:副词,又B:副词,交替C:副词,互相D:动词,经过E:动词,改动精确谜底: B(单选题)26:“太子起坐,更适阴阳”中“更”的用法是:A:副词,又B:副词,交替C:副词,互相D:动词,经过E:动词,改动正确答案: A(单选题)27:“XXX使人问其故”中“故”的用法是:A:副词,特地B:名词,原因C:因果连词,以是D:形容词,原来的E:名词,本来的状况,指安康正确答案: B(单项选择题)28:“已故到谯”中“故”的用法是:A:副词,特别B:名词,原因C:因果连词,所以D:形容词,原来的E:名词,原先的状况,指健康正确答案: A(单选题)29:“精神不能止邪气”中“止”的用法是:A:动词,阻止B:副词,只C:动词,居住D:语气词,无义E:动词,到……去正确答案: A(单选题)30:“决者至众,不可曲止也”中“止”的用法是:A:动词,阻止B:副词,只C:动词,居住D:语气词,无义E:动词,到……去正确答案: D(单选题)31:“人之所病,病疾多”中“病”的用法是:A:动词,担心B:名词,疾病C:动词,痛恨D:形容词,病重E:动词,患……病精确谜底: A(单选题)32:“太子何病”中“病”的用法是:A:动词,担心B:名词,疾病C:动词,怨恨D:形容词,病重E:动词,患……病正确答案: E(单选题)33:“当引某许,若至,语人”中“许”的用法是:A:名词,部位B:名词,住处C:动词,赞赏D:动词,赞成E:副词,摆布,表约数正确答案: A(单项选择题)34:“食顷,吐出三升许虫”中“许”的用法是:A:名词,部位B:名词,住处C:动词,赞赏D:动词,赞成E:副词,左右,表约数精确谜底: E(单项选择题)35:“行数里,昕卒头眩堕车”中“卒”的用法是:A:动词,完成B:动词,死C:副词,终于D:副词,最终E:通“猝”,副词,突然精确谜底: E(单项选择题)36:“促去可得与家相见,五日卒”中“卒”的用法是:A:动词,完成B:动词,死C:副词,终于D:副词,最终E:通“猝”,副词,突然正确答案: B(单项选择题)37:“成得药去”中“去”的用法是:A:动词,离开B:动词,除去C:同“弆”,动词,储藏D:动词,到……去E:形容词,过去了的精确谜底: A(单选题)38:“何忍无急去药”中“去”的用法是:A:动词,分开B:动词,除去C:同“弆”,动词,贮藏D:动词,到……去E:描述词,曩昔了的正确答案: C(单选题)39:“益闻道德性命之说”中“益”的用法是:A:动词,增长B:副词,逐步C:副词,更加D:形容词,有益的E:动词,满出正确答案: B(单项选择题)40:“直谅多闻之良朋”中“益”的用法是:A:动词,增长B:副词,逐步C:副词,更加D:形容词,有益的E:动词,满出精确谜底: D(单项选择题)41:“稍长,从乡师长教师治经”中“治”的用法是:A:动词,进行B:描述词,正常C:动词,研读D:动词,治理E:动词,医治精确谜底: C(单选题)42:“操古方以治今病”中“治”的用法是:A:动词,进行B:形容词,正常C:动词,研读D:动词,治理E:动词,治疗正确答案: E(单选题)43:“学者多诵而取则焉”中“焉”的用法是:A:兼词,于此B:词尾,……的样子C:语气词,无义D:代词,之E:语气词,呢精确谜底: A(单选题)44:“讲道八华山,复往拜焉”中“焉”的用法是:A:兼词,于此B:词尾,……的样子C:语气词,无义D:代词,之E:语气词,呢正确答案: D(单选题)45:“长XXX亦知XXX非常人也”中的“非常”属于:A:同形词语B:同义复词C:偏义复词D:叠音词。

GS8640Z36GT-250V中文资料

GS8640Z36GT-250V中文资料

GS8640Z18/36T-xxxV72Mb Pipelined and Flow ThroughSynchronous NBT SRAM 250 MHz –167 MHz 1.8 V or 2.5 V V DD 1.8 V or 2.5 V I/O100-Pin TQFP Commercial Temp Industrial Temp Features• NBT (No Bus Turn Around) functionality allows zero wait read-write-read bus utilization; Fully pin-compatible with both pipelined and flow through NtRAM™, NoBL™ and ZBT™ SRAMs• 1.8 V or 2.5 V core power supply • 1.8 V or 2.5 V I/O supply• User-configurable Pipeline and Flow Through mode • LBO pin for Linear or Interleave Burst mode• Pin compatible with 4Mb, 9Mb, 18Mb and 36Mb devices • Byte write operation (9-bit Bytes)• 3 chip enable signals for easy depth expansion • ZZ Pin for automatic power-down• JEDEC-standard 100-lead TQFP package• RoHS-compliant 100-lead TQFP package availableFunctional DescriptionThe GS8640Z18/36T-xxxV is a 72Mbit Synchronous Static SRAM. GSI's NBT SRAMs, like ZBT, NtRAM, NoBL or other pipelined read/double late write or flow through read/single late write SRAMs, allow utilization of all available bus bandwidth by eliminating the need to insert deselect cycles when the device is switched from read to write cycles.Because it is a synchronous device, address, data inputs, and read/ write control inputs are captured on the rising edge of the input clock. Burst order control (LBO) must be tied to a power rail for proper operation. Asynchronous inputs include the Sleep mode enable (ZZ) and Output Enable. Output Enable can be used to override the synchronous control of the output drivers and turn the RAM's output drivers off at any time. Write cycles are internally self-timed and initiated by the rising edge of the clock input. This feature eliminates complex off-chip write pulse generation required by asynchronous SRAMs and simplifies input signal timing.The GS8640Z18/36T-xxxV may be configured by the user to operate in Pipeline or Flow Through mode. Operating as a pipelined synchronous device, meaning that in addition to the rising edge triggered registers that capture input signals, the device incorporates a rising-edge-triggered output register. For read cycles, pipelined SRAM output data is temporarily stored by the edge triggered output register during the access cycle and then released to the output drivers at the next rising edge of clock.The GS8640Z18/36T-xxxV is implemented with GSI's high performance CMOS technology and is available in a JEDEC-standard 100-pin TQFP package.Parameter Synopsis-250-200-167Unit Pipeline 3-1-1-1t KQ tCycle 3.04.0 3.05.0 3.56.0ns ns (x18)Curr (x32/x36)410350305mA Flow Through 2-1-1-1t KQ tCycle 6.56.57.57.58.08.0ns ns (x18)Curr (x32/x36)280250240mA807978777675747372717069686766656463626160595857565554535251123456789101112131415161718192021222324252627282930V DDQ V SS DQ B DQ B V SS V DDQ DQ B DQ B FT V DD NC V SS DQ B DQ B V DDQ V SS DQ B DQ B DQP BV SS V DDQ V DDQ V SS DQ A DQ A V SS V DDQ DQ A DQ A V SS NC V DD ZZ DQ A DQ A V DDQ V SS DQ A DQ A V SS V DDQ L B O A A A A A 1A 0N C N C V S SV D DA A A A A A A AA A E 1E 2 N C N C B BB AE 3C K W C K E VD DV S SG A D V A A A AA 2M x 18Top View DQP A A NC NC NC NC NC NC NC NCNC NC NC NC NC NC NCNC NC 100999897969594939291908988878685848382813132333435363738394041424344454647484950GS8640Z18/36T-xxxVGS8640Z18T-xxxV Pinout (Package T)807978777675747372717069686766656463626160595857565554535251123456789101112131415161718192021222324252627282930V DDQ V SS DQ C DQ C V SS V DDQ DQ C DQ C FT V DD NC V SS DQ D DQ D V DDQ V SS DQ D DQ D DQ D V SS V DDQ V DDQ V SS DQ B DQ B V SS V DDQ DQ B DQ B V SS NC V DD ZZ DQ A DQ A V DDQ V SS DQ A DQ A V SS V DDQ L B O A A A A A 1A 0N C N C V S SV D DA A A A A A A AA A E 1E 2 B DB CB BB AE 3C K W C K E VD DV S SG A D V A A A AA 1M x 36Top View DQB DQP B DQ B DQ B DQ B DQ A DQ A DQ A DQ A DQP ADQ C DQ C DQ C DQ D DQ D DQ D DQP DDQ C DQP C 100999897969594939291908988878685848382813132333435363738394041424344454647484950GS8640Z18/36T-xxxVGS8640Z36T-xxxV Pinout (Package T)TQFP Pin DescriptionsSymbolTypeDescriptionA 0, A 1In Burst Address Inputs; Preload the burst counterA In Address Inputs CK In Clock Input SignalB A In Byte Write signal for data inputs DQ A1-DQ A9; active low B B In Byte Write signal for data inputs DQ B1-DQ B9; active low BC In Byte Write signal for data inputs DQ C1-DQ C9; active low BD In Byte Write signal for data inputs DQ D1-DQ D9; active lowW In Write Enable; active low E 1In Chip Enable; active lowE 2In Chip Enable; Active High. For self decoded depth expansion E 3In Chip Enable; Active Low. For self decoded depth expansionG In Output Enable; active lowADV In Advance/Load; Burst address counter control pinCKE In Clock Input Buffer Enable; active low DQ A I/O Byte A Data Input and Output pins DQ B I/O Byte B Data Input and Output pins DQ C I/O Byte C Data Input and Output pins DQ D I/O Byte D Data Input and Output pins ZZ In Power down control; active high FT In Pipeline/Flow Through Mode Control; active lowLBO In Linear Burst Order; active lowV DD In Core power supplyV SS In GroundV DDQ In Output driver power supplyNC—No ConnectGS8640Z18/36T-xxxVKS A 1S A 0B u r s t Co u nt e rL B OA D VM e m o r y A r r a yE 3E 2E 1GWB DB CB BB AC KC K ED QF TD Q a –D Q nKS A 1’S A 0’D QM a t c hW r i t e A d d r e s sR e g i s t e r 2W r i t e A d d r e s sR e g i s t e r 1W r i t e D a t aR e g i s t e r 2W r i t e D a t aR e g i s t e r 1KKKKKKS e n s e A m p sW r i t e D r i v e r sR e a d , W r i t e a n dD a t a C o h e r e n c yC o n t r o l L o g i cF TA 0–A nGS8640Z18/36T-xxxVGS8640Z18/36T-xxxV NBT SRAM Functional Block DiagramGS8640Z18/36T-xxxVFunctional DetailsClockingDeassertion of the Clock Enable (CKE) input blocks the Clock input from reaching the RAM's internal circuits. It may be used to suspend RAM operations. Failure to observe Clock Enable set-up or hold requirements will result in erratic operation.Pipeline Mode Read and Write OperationsAll inputs (with the exception of Output Enable, Linear Burst Order and Sleep) are synchronized to rising clock edges. Single cycle read and write operations must be initiated with the Advance/Load pin (ADV) held low, in order to load the new address. Device activation is accomplished by asserting all three of the Chip Enable inputs (E 1, E 2 and E 3). Deassertion of any one of the Enable inputs will deactivate the device. Function W B A B B B C B D Read H X X X X Write Byte “a”L L H H H Write Byte “b”L H L H H Write Byte “c”L H H L H Write Byte “d”L H H H L Write all Bytes L L L L L Write Abort/NOPLHHHHRead operation is initiated when the following conditions are satisfied at the rising edge of clock: CKE is asserted Low, all three chip enables (E 1, E 2, and E 3) are active, the write enable input signals W is deasserted high, and ADV is asserted low. The address presented to the address inputs is latched in to address register and presented to the memory core and control logic. The control logic determines that a read access is in progress and allows the requested data to propagate to the input of the output register. At the next rising edge of clock the read data is allowed to propagate through the output register and onto the output pins.Write operation occurs when the RAM is selected, CKE is active, and the Write input is sampled low at the rising edge of clock. The Byte Write Enable inputs (B A , B B , B C, & B D ) determine which bytes will be written. All or none may be activated. A write cycle with no Byte Write inputs active is a no-op cycle. The pipelined NBT SRAM provides double late write functionality,matching the write command versus data pipeline length (2 cycles) to the read command versus data pipeline length (2 cycles). At the first rising edge of clock, Enable, Write, Byte Write(s), and Address are registered. The Data In associated with that address is required at the third rising edge of clock.Flow Through Mode Read and Write OperationsOperation of the RAM in Flow Through mode is very similar to operations in Pipeline mode. Activation of a Read Cycle and the use of the Burst Address Counter is identical. In Flow Through mode the device may begin driving out new data immediately after new address are clocked into the RAM, rather than holding new data until the following (second) clock edge. Therefore, in Flow Through mode the read pipeline is one cycle shorter than in Pipeline mode.Write operations are initiated in the same way, but differ in that the write pipeline is one cycle shorter as well, preserving the ability to turn the bus from reads to writes without inserting any dead cycles. While the pipelined NBT RAMs implement a double late write protocol, in Flow Through mode a single late write protocol mode is observed. Therefore, in Flow Through mode, address and control are registered on the first rising edge of clock and data in is required at the data input pins at the second rising edge of clock.Synchronous Truth TableOperationType Address CK CKE ADV W Bx E 1E 2E 3G ZZDQNotesRead Cycle, Begin Burst R External L-H L L H X L H L L L Q Read Cycle, Continue Burst B Next L-H L H X X X X X L L Q 1,10NOP/Read, Begin Burst R External L-H L L H X L H L H L High-Z 2Dummy Read, Continue Burst B Next L-H L H X X X X X H L High-Z 1,2,10Write Cycle, Begin Burst W External L-H L L L L L H L X L D 3Write Cycle, Continue Burst B Next L-H L H X L X X X X L D1,3,10Write Abort, Continue Burst B Next L-H L H X H X X X X L High-Z 1,2,3,10Deselect Cycle, Power Down D None L-H L L X X H X X X L High-Z Deselect Cycle, Power Down D None L-H L L X X X X H X L High-Z Deselect Cycle, Power Down D None L-H L L X X X L X X L High-Z Deselect Cycle D None L-H L L L H L H L X L High-Z 1Deselect Cycle, Continue DNone L-H L H X X X X X X L High-Z 1Sleep ModeNone X X X X X X X X X H High-Z Clock Edge Ignore, StallCurrentL-HHXXXXXXXL-4Notes:1.Continue Burst cycles, whether read or write, use the same control inputs. A Deselect continue cycle can only be entered into if a Dese-lect cycle is executed first.2.Dummy Read and Write abort can be considered NOPs because the SRAM performs no operation. A Write abort occurs when the Wpin is sampled low but no Byte Write pins are active so no write operation is performed.3.G can be wired low to minimize the number of control signals provided to the SRAM. Output drivers will automatically turn off duringwrite cycles.4.If CKE High occurs during a pipelined read cycle, the DQ bus will remain active (Low Z). If CKE High occurs during a write cycle, the buswill remain in High Z.5. X = Don’t Care; H = Logic High; L = Logic Low; Bx = High = All Byte Write signals are high; Bx = Low = One or more Byte/Writesignals are Low6.All inputs, except G and ZZ must meet setup and hold times of rising clock edge.7.Wait states can be inserted by setting CKE high.8.This device contains circuitry that ensures all outputs are in High Z during power-up.9. A 2-bit burst counter is incorporated.10.The address counter is incriminated for all Burst continue cycles.GS8640Z18/36T-xxxVGS8640Z18/36T-xxxVDeselectNew ReadNew WriteBurst ReadBurst WriteWRBRBWDDBBWRD BWRDDCurrent State (n)Next State (n+1)TransitionƒInput Command CodeKeyNotes:1. The Hold command (CKE Low) is notshown because it prevents any state change.2. W, R, B and D represent input commandcodes ,as indicated in the Synchronous Truth Table.Clock (CK)CommandCurrent StateNext Stateƒnn+1n+2n+3ƒƒƒCurrent State and Next State Definition for Pipeline and Flow Through Read/Write Control State DiagramWRPipeline and Flow Through Read Write Control State DiagramGS8640Z18/36T-xxxVIntermediateIntermediateIntermediateIntermediateIntermediateIntermediateHigh Z (Data In)Data Out (Q Valid)High Z B W B R B DRW RWDDCurrent State (n)TransitionƒInput Command CodeKeyTransitionIntermediate State (N+1)Notes:1. The Hold command (CKE Low) is notshown because it prevents any state change.2. W, R, B, and D represent input command codes as indicated in the Truth Tables.Clock (CK)CommandCurrent StateIntermediate ƒn n+1n+2n+3ƒƒƒCurrent State and Next State Definition for Pipeline Mode Data I/O State DiagramNext StateStatePipeline Mode Data I/O State DiagramGS8640Z18/36T-xxxVHigh Z (Data In)Data Out (Q Valid)High Z B W B R B DRW RWDDCurrent State (n)Next State (n+1)TransitionƒInput Command CodeKeyNotes1. The Hold command (CKE Low) is notshown because it prevents any state change.2. W, R, B and D represent input command codes as indicated in the Truth Tables.Clock (CK)CommandCurrent StateNext Stateƒnn+1n+2n+3ƒƒƒCurrent State and Next State Definition for: Pipeline and Flow Through Read Write Control State DiagramFlow Through Mode Data I/O State DiagramGS8640Z18/36T-xxxVBurst CyclesAlthough NBT RAMs are designed to sustain 100% bus bandwidth by eliminating turnaround cycle when there is transition from read to write, multiple back-to-back reads or writes may also be performed. NBT SRAMs provide an on-chip burst address generator that can be utilized, if desired, to further simplify burst read or write implementations. The ADV control pin, when driven high, commands the SRAM to advance the internal address counter and use the counter generated address to read or write the SRAM. The starting address for the first cycle in a burst cycle series is loaded into the SRAM by driving the ADV pin low, into Load mode.Burst OrderThe burst address counter wraps around to its initial state after four addresses (the loaded address and three more) have beenaccessed. The burst sequence is determined by the state of the Linear Burst Order pin (LBO). When this pin is low, a linear burst sequence is selected. When the RAM is installed with the LBO pin tied high, Interleaved burst sequence is selected. See the tables below for details.Mode Pin FunctionsMode NamePin NameStateFunctionBurst Order Control LBO L Linear Burst H Interleaved Burst Output Register Control FT L Flow Through H or NC Pipeline Power Down ControlZZL or NC Active HStandby, I DD = I SBNote:There is a pull-up device on the FT pin and a pull-down device on the ZZ pin, so this input pin can be unconnected and the chip will operate in the default states as specified in the above table.Note:The burst counter wraps to initial state on the 5th clock.Note:The burst counter wraps to initial state on the 5th clock.Linear Burst SequenceA[1:0]A[1:0]A[1:0]A[1:0]1st address 000110112nd address 011011003rd address 101100014th address11000110Interleaved Burst SequenceA[1:0]A[1:0]A[1:0]A[1:0]1st address 000110112nd address 010011103rd address 101100014th address11100100Burst Counter SequencesBPR 1999.05.18GS8640Z18/36T-xxxVSleep ModeDuring normal operation, ZZ must be pulled low, either by the user or by it’s internal pull down resistor. When ZZ is pulled high, the SRAM will enter a Power Sleep mode after 2 cycles. At this time, internal state of the SRAM is preserved. When ZZ returns to low, the SRAM operates normally after 2 cycles of wake up time.Sleep mode is a low current, power-down mode in which the device is deselected and current is reduced to I SB 2. The duration of Sleep mode is dictated by the length of time the ZZ is in a high state. After entering Sleep mode, all inputs except ZZ become disabled and all outputs go to High-Z The ZZ pin is an asynchronous, active high input that causes the device to enter Sleep mode. When the ZZ pin is driven high, I SB 2 is guaranteed after the time tZZI is met. Because ZZ is an asynchronous input, pending operations or operations in progress may not be properly completed if ZZ is asserted. Therefore, Sleep mode must not be initiated until valid pending operations are completed. Similarly, when exiting Sleep mode during tZZR, only a deselect or read commands may be applied while the SRAM is recovering from Sleep mode.Sleep Mode Timing DiagramtZZRtZZHtZZStKLtKHtKCCKZZDesigning for CompatibilityThe GSI NBT SRAMs offer users a configurable selection between Flow Through mode and Pipeline mode via the FT signal found on Pin 14. Not all vendors offer this option, however most mark Pin 14 as V DD or V DDQ on pipelined parts and V SS on flow through parts. GSI NBT SRAMs are fully compatible with these sockets.Absolute Maximum Ratings(All voltages reference to V SS )SymbolDescriptionValueUnitV DD Voltage on V DD Pins –0.5 to 4.6V V DDQ Voltage on V DDQ Pins –0.5 to V DDV V I/O Voltage on I/O Pins –0.5 to V DDQ +0.5 (≤ 4.6 V max.)V V IN Voltage on Other Input Pins –0.5 to V DD +0.5 (≤ 4.6 V max.)V I IN Input Current on Any Pin +/–20mA I OUT Output Current on Any I/O Pin +/–20mA P D Package Power Dissipation 1.5WT STG Storage Temperature –55 to 125o C T BIASTemperature Under Bias–55 to 125oCGS8640Z18/36T-xxxVNote:Permanent damage to the device may occur if the Absolute Maximum Ratings are exceeded. Operation should be restricted to Recommended Operating Conditions. Exposure to conditions exceeding the Absolute Maximum Ratings, for an extended period of time, may affect reliability of this component. Power Supply Voltage Ranges (1.8 V/2.5 V Version)ParameterSymbolMin.Typ.Max.UnitNotes1.8 V Supply Voltage V DD1 1.7 1.82.0V 2.5 V Supply Voltage V DD2 2.3 2.5 2.7V 1.8 V V DDQ I/O Supply Voltage V DDQ1 1.7 1.8V DD V 2.5 V V DDQ I/O Supply VoltageV DDQ22.32.5V DDVNotes:1.The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifica-tions quoted are evaluated for worst case in the temperature range marked on the device.2.Input Under/overshoot voltage must be –2 V > Vi < V DDn +2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.GS8640Z18/36T-xxxVV DDQ2 & V DDQ1 Range Logic LevelsParameterSymbolMin.Typ.Max.UnitNotesV DD Input High Voltage V IH 0.6*V DD —V DD + 0.3V 1V DD Input Low VoltageV IL–0.3—0.3*V DDV1Notes:1.The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifica-tions quoted are evaluated for worst case in the temperature range marked on the device.2.Input Under/overshoot voltage must be –2 V > Vi < V DDn +2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.Recommended Operating TemperaturesParameterSymbolMin.Typ.Max.UnitNotesAmbient Temperature (Commercial Range Versions)T A 02570°C 2Ambient Temperature (Industrial Range Versions)T A–402585°C2Notes:1.The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifica-tions quoted are evaluated for worst case in the temperature range marked on the device.2.Input Under/overshoot voltage must be –2 V > Vi < V DDn +2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.20% tKCV SS – 2.0 V50%V SS V IHUndershoot Measurement and TimingOvershoot Measurement and Timing20% tKCV DD + 2.0 V50%V DDV ILCapacitanceo C, f = 1 MH Z , V DD ParameterSymbolTest conditionsTyp.Max.UnitInput Capacitance C IN V IN = 0 V 45pF Input/Output Capacitance C I/OV OUT = 0 V67pFNote:These parameters are sample tested.(T A = 25= 2.5 V)AC Test ConditionsParameterConditionsDQV DDQ/250Ω30pF *Output Load 1* Distributed Test Jig CapacitanceFigure 1Input high level V DD – 0.2 V Input low level 0.2 V Input slew rate 1 V/ns Input reference level V DD /2Output reference levelV DDQ /2Output loadFig. 11.Include scope and jig capacitance.2.Test conditions as specified with output loading as shown in Fig. 1unless otherwise noted.3.Device is deselected as defined by the Truth Table. GS8640Z18/36T-xxxVDC Electrical CharacteristicsParameterSymbolTest ConditionsMinMaxInput Leakage Current (except mode pins)I IL V IN = 0 to V DD –1 uA 1 uA FT, ZZ Input Current I IN V DD ≥ V IN ≥ 0 V –100 uA 100 uA Output Leakage CurrentI OLOutput Disable, V OUT = 0 to V DD–1 uA1 uADC Output Characteristics (1.8 V/2.5 V Version)ParameterSymbolTest ConditionsMinMax1.8 V Output High Voltage V OH1I OH = –4 mA, V DDQ = 1.6 V V DDQ – 0.4 V —2.5 V Output High Voltage V OH2I OH = –8 mA, V DDQ = 2.375 V1.7 V —1.8 V Output Low Voltage V OL1I OL = 4 mA —0.4 V2.5 V Output Low VoltageV OL2I OL = 8 mA—0.4 VOperating CurrentsParameterTest ConditionsModeSymbol-250-200-167Unit0to 70°C –40 to 85°C 0to 70°C –40to 85°C 0 to 70°C –40to 85°C Operating CurrentDevice Selected; All other inputs ≥V IH o r ≤ V IL Output open(x32/x36)Pipeline I DD I DDQ 360503805031040330402703529035mA Flow Through I DD I DDQ 255252752523020250202202024020mA (x18)PipelineI DD I DDQ 315253352527020290202402026020mA Flow Through I DD I DDQ 230152501520515225151951521515mA Standby Current ZZ ≥ V DD – 0.2 V —PipelineI SB 100120100120100120mA Flow Through I SB 100120100120100120mA Deselect CurrentDevice Deselected; All other inputs ≥ V IH or ≤ V IL—Pipeline I DD 140155130146125140mA Flow ThroughI DD125140120135120135mAGS8640Z18/36T-xxxVNotes:1.I DD and I DDQ apply to any combination of V DD and V DDQ operation.2.All parameters listed are worst case scenario.AC Electrical CharacteristicsParameter Symbol -250-200-167Unit Min Max Min Max Min Max PipelineClock Cycle Time tKC 4.0— 5.0— 6.0—ns Clock to Output ValidtKQ — 3.0— 3.0— 3.5ns Clock to Output Invalid tKQX 1.5— 1.5— 1.5—ns Clock to Output in Low-ZtLZ 1 1.5— 1.5— 1.5—ns Setup time tS 1.5— 1.5— 1.5—ns Hold time tH 0.2—0.4—0.5—ns Flow ThroughClock Cycle Time tKC 6.5—7.5—8.0—ns Clock to Output ValidtKQ — 6.5—7.5—8.0ns Clock to Output Invalid tKQX 3.0— 3.0— 3.0—ns Clock to Output in Low-ZtLZ 1 3.0— 3.0— 3.0—ns Setup time tS 1.5— 1.5— 1.5—ns Hold time tH 0.5—0.5—0.5—ns Clock HIGH Time tKH 1.3— 1.3— 1.3—ns Clock LOW Time tKL 1.7— 1.7— 1.7—ns Clock to Output inHigh-Z tHZ 1 1.5 2.5 1.5 3.0 1.5 3.0ns G to Output Valid tOE — 2.5— 3.0— 3.5ns G to output in Low-Z tOLZ 10—0—0—ns G to output in High-Z tOHZ 1— 2.5— 3.0— 3.0ns ZZ setup time tZZS 25—5—5—ns ZZ hold time tZZH 21—1—1—ns ZZ recoverytZZR20—20—20—nsGS8640Z18/36T-xxxVNotes:1.These parameters are sampled and are not 100% tested.2.ZZ is an asynchronous signal. However, in order to be recognized on any given clock cycle, ZZ must meet the specified setup and holdtimes as specified above.GS8640Z18/36T-xxxVPipeline Mode Timing (NBT)Begin Read A Cont Cont Deselect Write B Read C Read C+1Read C+2Read C+3ContDeselecttHZtKQX tKQtLZtHtStOHZtOEtHtStHtStHtStHtStHtStStHtStHtStHtSBurst ReadtKCtKL tKH Single Write Single ReadQ(A)D(B)Q(C)Q(C+1)Q(C+2)Q(C+3)ABCDeselected with E1E1 masks ADSPE2 and E3 only sampled with ADSP and ADSCADSC initiated readCK ADSPADSCADVA0–AnGWBWBa–BdE1E2E3GDQa–DQdGS8640Z18/36T-xxxVFlow Through Mode Timing (NBT)Begin Read A ContCont Write B Read C Read C+1Read C+2Read C+3Read C Cont DeselecttHZtKQXtKQ tLZtH tStOHZtOEtHtS tHtS tHtStHtS tHtS tHtStHtS tHtS tH tS tHtS tKCtKL tKHABCQ(A)D(B)Q(C)Q(C+1)Q(C+2)Q(C+3)Q(C)E2 and E3 only sampled with ADSCADSC initiated readDeselected with E1Fixed HighCK ADSPADSCADVA0–AnGWBWBa–BdE1E2E3GDQa–DQdGS8640Z18/36T-xxxVTQFP Package Drawing (Package T) D1D E1EPin 1be cLL1A2A1YθNotes:1.All dimensions are in millimeters (mm).2.Package width and length do not include mold protrusion.SymbolDescriptionMin.Nom.MaxA1Standoff 0.050.100.15A2Body Thickness 1.35 1.40 1.45b Lead Width 0.200.300.40c Lead Thickness 0.09—0.20D Terminal Dimension 21.922.022.1D1Package Body 19.920.020.1E Terminal Dimension 15.916.016.1E1Package Body 13.914.014.1e Lead Pitch —0.65—L Foot Length 0.450.600.75L1Lead Length —1.00—Y Coplanarity 0.10θLead Angle0°—7°Ordering Information —GSI NBT Synchronous SRAMOrgPart Number1TypeVoltage OptionPackageSpeed 2(MHz/ns)T A 3Status 44M x 18GS8640Z18T-250V NBT 1.8 V or 2.5 V TQFP 250/6.5C PQ 4M x 18GS8640Z18T-200V NBT 1.8 V or 2.5 V TQFP 200/7.5C PQ 4M x 18GS8640Z18T-167V NBT 1.8 V or 2.5 V TQFP 167/8C PQ 2M x 36GS8640Z36T-250V NBT 1.8 V or 2.5 V TQFP 250/6.5C PQ 2M x 36GS8640Z36T-200V NBT 1.8 V or 2.5 V TQFP 200/7.5C PQ 2M x 36GS8640Z36T-167V NBT 1.8 V or 2.5 V TQFP 167/8C PQ 4M x 18GS8640Z18T-250IV NBT 1.8 V or 2.5 V TQFP 250/6.5I PQ 4M x 18GS8640Z18T-200IV NBT 1.8 V or 2.5 V TQFP 200/7.5I PQ 4M x 18GS8640Z18T-167IV NBT 1.8 V or 2.5 V TQFP 167/8I PQ 2M x 36GS8640Z36T-250IV NBT 1.8 V or 2.5 V TQFP 250/6.5I PQ 2M x 36GS8640Z36T-200IV NBT 1.8 V or 2.5 V TQFP 200/7.5I PQ 2M x 36GS8640Z36T-167IV NBT 1.8 V or 2.5 V TQFP167/8I PQ 4M x 18GS8640Z18GT-250V NBT 1.8 V or 2.5 V RoHS-compliant TQFP 250/6.5C PQ 4M x 18GS8640Z18GT-200V NBT 1.8 V or 2.5 V RoHS-compliant TQFP 200/7.5C PQ 4M x 18GS8640Z18GT-167V NBT 1.8 V or 2.5 V RoHS-compliant TQFP 167/8C PQ 2M x 36GS8640Z36GT-250V NBT 1.8 V or 2.5 V RoHS-compliant TQFP 250/6.5C PQ 2M x 36GS8640Z36GT-200V NBT 1.8 V or 2.5 V RoHS-compliant TQFP 200/7.5C PQ 2M x 36GS8640Z36GT-167V NBT 1.8 V or 2.5 V RoHS-compliant TQFP 167/8C PQ 4M x 18GS8640Z18GT-250IV NBT 1.8 V or 2.5 V RoHS-compliant TQFP 250/6.5I PQ 4M x 18GS8640Z18GT-200IV NBT 1.8 V or 2.5 V RoHS-compliant TQFP 200/7.5I PQ 4M x 18GS8640Z18GT-167IV NBT 1.8 V or 2.5 V RoHS-compliant TQFP 167/8I PQ 2M x 36GS8640Z36GT-250IV NBT 1.8 V or 2.5 V RoHS-compliant TQFP 250/6.5I PQ 2M x 36GS8640Z36GT-200IV NBT 1.8 V or 2.5 V RoHS-compliant TQFP 200/7.5I PQ 2M x 36GS8640Z36GT-167IVNBT1.8 V or2.5 VRoHS-compliant TQFP167/8IPQNotes:1.Customers requiring delivery in Tape and Reel should add the character “T” to the end of the part number. Example: GS8640Z36T-167IVT.2.The speed column indicates the cycle frequency (MHz) of the device in Pipeline mode and the latency (ns) in Flow Through mode. Eachdevice is Pipeline/Flow Through mode-selectable by the user.3.T A = C = Commercial Temperature Range. T A = I = Industrial Temperature Range.4.PQ = Pre-Qualification.5.GSI offers other versions this type of device in many different configurations and with a variety of different features, only some of which arecovered in this data sheet. See the GSI Technology web site () for a complete listing of current offeringsGS8640Z18/36T-xxxV。

Q345E-Z25

Q345E-Z25

Q345E-Z25一简介1. Q345E-Z25简介Q345E-Z25是钢的牌号,属于低合金高强度Z向钢板,具有较好的低温冲击性能;钢的牌号由代表屈服强度的汉语拼音字母、屈服强度值、质量、Z向性能级别符号四个部分组成。

其中:Q表示屈服强度;345表示屈服强度值,单位MPa;E表示等级(-40度冲击);Z25表示厚度方向(Z向)性能级别的符号。

2. Z向钢简介Z向钢:又称"抗层状撕裂钢(lamellar tearing resistant steel)",即平时所说的Z向性能。

采用焊接连接的钢结构中,当钢板厚度不小于40 mm且承受沿板厚度方向的拉力时,为避免焊接时产生层状撕裂,需采用抗层状撕裂的钢材(通常简称为"Z向钢")。

厚板存在层状撕裂问题,故要提出Z向性能测试。

钢板和型钢经过滚轧成型的,一般多高层钢结构所用钢材为热轧成型,热轧可以破坏钢锭的铸造组织,细化钢材的晶粒。

钢锭浇筑时形成的气泡和裂纹,可在高温和压力作用下焊合,从而使钢材的力学性能得到改善。

然而这种改善主要体现在沿轧制方向上,因钢材内部的非金属夹杂物(主要为硫化物、氧化物、硅酸盐等)经过轧压后被压成薄片,仍残留在钢板中(一般与钢板表面平行),而使钢板出现分层(夹层)现象。

这种非金属夹层现象。

使钢材沿厚度方向受拉的性能恶化。

因此钢板在三个方向的机械性能是有差别的:沿轧制方向最好;垂直于轧制方向的性能稍差;沿厚度方向性能又次之。

一般厚钢板较易产生层状撕裂,因为钢板越厚,非金属夹杂缺陷越多,且焊缝也越厚,焊接应力和变形也越大。

为解决这个问题,最好采用Z向钢。

这种钢板是在某一级结构钢(称为母级钢)的基础上,经过特殊冶练、处理的钢材,其含硫量为一般钢材的1/5以下,截面收缩率在15%以上。

钢板沿厚度方向的受力性能(主要为延性性能)称为Z向性能。

钢板的Z向性能可通过做试样拉伸试验得到,一般用断面收缩率来度量。

XXX《生理学Z》平时作业7答卷

XXX《生理学Z》平时作业7答卷

XXX《生理学Z》平时作业7答卷XXX《生理学Z》平时作业7试卷总分:100得分:100一、单选题(共100道试题,共100分)1.六烃季胺可阻断( )A.α受体B.β受体C.M型受体D.N1受体E.N2受体答案:D2.阿托品可阻断( )A.α受体B.β1受体C.β2受体D.M型受体E.N型受体答案:D3.胆碱N型受体阻断剂是( )A.XXX拉明B.XXXC.普萘洛尔D.氯筒箭毒E.阿托品答案:D4.反馈的结构基础是( )A.单线式联系B.分散式联系C.集聚式接洽D.环状接洽E.局部神经元回路答案:D5.听觉代表区位于( )A.中央前回B.中央后回C.枕叶皮层D.颞叶皮层E.边沿叶答案:D6.阑尾炎时牵涉痛部位主要在()A.左肩B.右肩C.左上肢尺侧D.上腹部E.腹股沟答案:D7.瞳孔对光反射中枢位于()A.脊髓B.延髓C.脑桥D.中脑E.下丘脑答案:D8.体温调节中枢主要位于( )A.脊髓B.延髓C.中脑D.下丘脑E.大脑谜底:D9.饮水中枢位于( )A.脊髓B.延髓C.中脑D.下丘脑E.大脑答案:D10.摄食中枢位于( )A.脊髓B.延髓C.中脑D.下丘脑E.大脑谜底:D11.散光眼矫正应选用( )A.平面镜B.凹透镜C.凸面镜D.圆柱镜E.变色镜谜底:D12.体液调节的特点是( )A.感化迅速、正确、长久B.作用迅速、广泛、短暂C.作用迅速、精确、持久D.作用缓慢、广泛、持久E.作用缓慢、广泛、短暂谜底:D13.交感神经末梢开释去甲肾上腺素属于( )A.纯真散布B.易化扩散C.主动转运D.胞吐E.胞纳答案:D14.K+通道的阻断剂是( )A.阿托品B.河鲀毒素C.XXXD.四乙铵E.普萘洛尔答案:D15.存在于甲状腺细胞膜上的是( )A.Na+--K+泵B.Cl-泵C.Ca2+泵D.I-泵E.H+泵答案:D16.血浆的粘滞性首要决意于( )A.红细胞数量B.白细胞数量C.血小板的数量D.血浆蛋白含量E.血浆NaCl含量答案:D17.正常淋巴细胞约占白细胞总数的( )A.0--1%B.0--7%C.2%--8%D.20%--40%E.50%--70%谜底:D18.心肌细胞中自律性最低的是()A.窦房结B.心房肌C.房室交界D.心肌传导细胞(浦肯野纤维)E.心室肌答案:D19.心肌细胞中传导速度最快的是()A.心房肌B.房室交界C.房室束D.心肌传导细胞(浦肯野纤维)E.心室肌答案:D20.心室肌细胞的相对不该期相称于()A.从动作电位期去极到复极达-55mv的时间B.从动作电位复极达-55mv到复极达-60mv的时间C.从动作电位期去极到复极达-60mv的时间D.从动作电位复极达-60mv到复极达-80mv的时间 E.从动作电位复极达-80mv到复极达-90mv的时间答案:D21.心电图的T波代表()A.两心房去极化过程的电位变化B.两心房复极化过程的电位变化C.两心室全部去极化完毕D.心室复极过程的电位变化E.兴奋在心室内流传进程的电位变革谜底:D22.左心室压力最低的时期是()A.等容收缩期末B.快速射血期末C.减慢射血期末D.快速充盈期末E.房缩期末答案:D23.快速射血期时()A.房内压>室内压<动脉压B.房内压<室内压<动脉压C.房内压>室内压>动脉压D.房内压动脉压E.房内压>动脉压<室内压答案:D24.心迷走神经末梢释放的神经递质是( )A.组胺B.多巴胺C.5-羟色胺D.乙酰胆碱E.去甲肾上腺素谜底:D25.缩胆囊素促使胰液分泌的特点是()A.大量的水份和碳酸氢盐,酶含量少B.大量的水分,而碳酸氢盐和酶少C.少量的水份和碳酸氢盐,酶的含量也少D.少量的水份和碳酸氢盐,而酶的含量丰富E.不仅含大量的水和盐,酶也丰富答案:D26.VitB12和胆盐的吸收部位在()A.口腔B.胃C.十二指肠和空肠D.回肠E.大肠谜底:D27.给高热病人用酒精擦身是为了增加()A.辐射散热B.传导散热C.对流散热D.蒸发散热E.加强产热答案:D28.体温调节的整合中枢位于()A.延髓B.脑干网状结构C.下丘脑后部D.视前区--下丘脑前部E.大脑皮层谜底:D29.肾小管Cl-继发性主动重吸收的部位是()A.近端小管B.髓袢降支细段C.髓袢升支细段D.髓袢升支粗段E.远曲小管谜底:D30.对远曲小管和集合管重吸收水起主要调节作用的激素是A.肾素B.醛固酮C.肾上腺素D.血管升压素E.血管紧张素谜底:D31.催产素合成的主要部位是()A.中缝核B.蓝斑核C.视上核D.室旁核E.前庭核答案:D32.少小时期缺乏哪类激素引发侏儒症()A.雌激素B.孕激素C.雄激素D.生长激素E.甲状腺激素谜底:D33.怀胎期乳腺发育是因为( )A.雌激素作用B.雌激素与生长激素的作用C.孕激素与生长激素的作用D.雌激素、孕激素与催乳素的作用)(E.催乳素与催产素的作用答案:D34.甲状腺素是指()A.MITB.DITC.T3D.T4E.γT3答案:D35.调节甲状旁腺分泌的主要因素是()A.血糖浓度B.血K+浓度C.血Na+浓度D.血Ca2+浓度E.血H+浓度谜底:D36.增进分化代谢的激素是( )A.胰岛素B.促胰液素C.发展激素D.胰高血糖素E.甲状旁腺激素答案:D37.参与应激回响反映的首要激素是()A.T3和T4B.Ad和NAC.ADH和催产素D.糖皮质激素和ACTHE.雌激素和孕激素答案:D38.促使子宫内膜产生排泄期改动的激素是( )A.催产素B.催乳素C.雌激素D.孕激素E.绒毛膜促性腺激素谜底:D39.自主神经的节前纤维属于()( )A.Aα纤维B.Aγ纤维C.Aδ纤维D.B类纤维E.C类纤维谜底:D40.皮肤痛温觉的传入纤维属于()( )A.Aα纤维B.Aβ纤维C.Aγ纤维D.Aδ纤维E.B类纤维答案:D41.自主神经节突触后膜上的受体是A.α受体B.β受体C.M型受体D.N1受体E.N2受体谜底:D42.六烃季胺可阻断()( )A.α受体B.β受体C.M型受体D.N1受体E.N2受体谜底:D43.阿托品可阻断()( )A.α受体B.β1受体C.β2受体D.M型受体E.N型受体谜底:D44.胆碱N型受体阻断剂是()A.阿托品B.XXXC.普萘洛尔D.氯筒箭毒碱( )()E.XXX拉明谜底:D45.反应的布局根蒂根基是()A.单线式联系B.分散式联系C.会聚式联系D.环路式联系E.部分神经元回路谜底:D46.肾结石时牵涉痛部位主要在()A.左肩B.右肩C.上腹部D.腹股沟E.左上肢尺侧答案:D47.饮水中枢位于( )A.脊髓B.延髓C.中脑D.下丘脑E.大脑答案:D48.摄食中枢位于( )A.脊髓B.延髓C.中脑D.下丘脑E.大脑答案:D49.瞳孔对光反射中枢位于()A.脊髓B.延髓C.脑桥D.中脑E.下丘脑答案:D50.微生物、大份子蛋白等从细胞外进入细胞的进程属于()A.纯真散布B.易化扩散C.主动转运D.胞吐E.胞纳答案:E51.胆碱能M受体阻断剂是()A.四乙铵B.河鲀毒素C.XXXD.箭毒E.阿托品答案:E52.参与血浆胶体渗透压形成的最主要物质是()A.葡萄糖B.NaCLC.尿素D.球蛋白E.白蛋白答案:E53.能释放组胺引起速发型过敏反应的白细胞是()A.单核--巨噬细胞B.淋巴细胞C.中性粒细胞D.嗜酸性粒细胞E.嗜碱性粒细胞谜底:E54.正常中性粒细胞约占白细胞总数的( )A.0--1%B.0--7%C.2%--8%D.20%--40%E.50%--70%答案:E55.启动内源性凝血的最主要物质是( )A.因子ⅢB.钙离子C.因子ⅦD.因子ⅨE.因子Ⅻ答案:E56.心室肌细胞的超常期相当于()A.从动作电位期去极到复极达-55mv的时间B.从动作电位复极达-55mv到复极达-60mv的时间C.从动作电位期去极到复极达-60mv的时间D.从动作电位复极达-60mv到复极达-80mv 的时间E.从动作电位复极达-80mv到复极达-90mv的时间谜底:E57.心电图的QRS波群代表()A.两心房去极化进程的电位变革B.两心房复极化过程的电位变化C.两心室所有去极化终了D.两心室复极进程的电位变革E.兴奋在心室内流传进程的电位变革谜底:E58.左心室容积最大的时期是()A.快速射血期B.减速射血期C.快速充盈期末D.减慢充盈期末E.房缩期末谜底:E59.从机能上,小静脉和微静脉属于( )A.弹性贮器血管B.容量血管C.交换血管D.毛细血管前阻力血管E.毛细血管后阻力血管答案:E60.心交感神经末梢开释的神经递质是()A.乙酰胆碱B.多巴胺C.组织胺D.5-羟色胺E.去甲肾上腺素谜底:E61.肉体性发汗的中枢大概位于()A.延髓B.脑干网状结构C.下丘脑后部D.视前区--下丘脑前部E.大脑皮层答案:EXXX的排泄首要产生在( )A.近端小管B.髓袢降支细段C.髓袢升支细段D.髓袢升支粗段E.远曲小管和集合管谜底:E63.对远曲小管和集合管重吸收Na+起主要作用的激素是A.肾素B.肾上腺素C.血管紧张素D.血管升压素E.醛固酮谜底:E64.下丘脑视上核主要分泌()A.发展激素B.生长抑素C.催乳素D.催产素E.血管升压素谜底:E65.婴儿时期缺乏哪种激素引起呆小症()A.雌激素B.孕激素C.雄激素D.生长激素E.甲状腺激素答案:E66.自主神经的节后纤维属于( )A.Aα纤维B.Aγ纤维C.Aδ纤维D.B类纤维)(E.C类纤维谜底:E67.骨骼肌终板膜上的受体是( )A.α受体B.β受体C.M型受体D.N1受体E.N2受体谜底:E68.十烃季胺可阻断( )A.α受体B.β受体C.M型受体D.N1受体E.N2受体谜底:E69.氯筒箭毒碱可阻断( )A.α受体B.β1受体C.β2受体D.M型受体E.N型受体谜底:E70.胆碱M型受体阻断剂是( )A.XXX拉明B.XXXC.普萘洛尔D.氯筒箭毒E.阿托品谜底:E71.在传导皮肤痛觉的神经纤维中,传导慢痛的首要是()A.Aα纤维B.Aβ纤维C.Aδ纤维D.B类纤维E.C类纤维谜底:E72.肾结石时牵扯痛部位首要在( )A.左肩B.右肩C.左上肢尺侧D.上腹部E.腹股沟答案:E73.出汗的基本中枢位于( )A.脊髓B.延髓C.脑桥D.中脑E.下丘脑答案:E74.散光眼是由于( )A.眼球前后径过短B.眼球前后径过长C.晶状体弹性减退D.折光系统折光力过弱E.角膜表面在分歧偏向上曲率半径分歧答案:E75.平均动脉压在一定范围内脑血流量维持稳定水平是依赖于()A.神经调节B.体液调节C.神经—体液调节D.免疫调治E.自身调节答案:E76.经由过程改动心肌缩短本领调治搏出量属于()A.神经调治B.体液调节C.神经—体液调治D.免疫调治E.本身调治答案:E77.微生物、大分子蛋白等从细胞外进入细胞的过程属于()A.单纯扩散B.易化散布C.主动转运D.胞吐E.胞纳谜底:E78.胆碱能M受体阻断剂是()A.氯筒箭毒B.河鲀毒素C.XXXD.四乙铵E.阿托品答案:E79.参与血浆胶体渗透压形成的最主要物质是()A.葡萄糖B.NaClC.尿素D.球蛋白E.白蛋白谜底:E80.一般中性粒细胞约占白细胞总数的( )A.0--1%B.0--7%C.2%--8%D.20%--40%E.50%--70%谜底:E81.能释放组胺引起速发型过敏反应的白细胞是()A.单核--巨噬细胞B.淋巴细胞C.中性粒细胞D.嗜酸性粒细胞E.嗜碱性粒细胞答案:E82.心室肌细胞的超常期相当于()A.从动作电位期去极到复极达-55mv的时间B.从动作电位复极达-55mv到复极达-60mv的时间C.从动作电位期去极到复极达-60mv的时间D.从动作电位复极达-60mv到复极达-80mv 的时间E.从动作电位复极达-80mv到复极达-90mv的时间谜底:E83.心电图的QRS波群代表()A.两心房去极化过程的电位变化B.两心房复极化过程的电位变化C.两心室所有去极化终了D.心室复极进程的电位变革E.兴奋在心室内流传进程的电位变革答案:E84.左心室容积最大的时期是()A.快速射血期B.减速射血期C.快速充盈期末D.减慢充盈期末E.房缩期末谜底:E85.心交感神经末梢开释的神经递质是()A.组胺B.多巴胺C.5-羟色胺D.乙酰胆碱E.去甲肾上腺素谜底:E86.交感缩血管神经纤维释放的递质是( )A.组胺B.5-羟色胺C.乙酰胆碱D.肾上腺素E.去甲肾上腺素答案:E87.精神性发汗的中枢可能位于()A.延髓B.脑干网状结构C.下丘脑后部D.视前区--下丘脑前部E.大脑皮层答案:E88.在肾脏尿液稀释的首要部位是( )A.近端小管B.髓袢降支细段C.髓袢升支D.远曲小管E.集合管答案:E89.在肾脏Na+重吸收同时伴有K+分泌的部位是( )A.近曲小管B.髓袢降支细段C.髓袢升支细段D.髓袢升支粗段E.远曲小管和集合管谜底:E90.下丘脑视上核主要分泌()A.催乳素B.催产素C.生长激素D.生长抑素E.血管升压素谜底:E91.婴儿时期缺乏哪种激素引起呆小症A.雌激素B.孕激素C.雄激素D.生长激素E.甲状腺激素答案:E92.促使血钙升高的激素是( )A.胰岛素B.发展激素C.糖皮质激素D.甲状腺激素E.甲状旁腺激素答案:E93.胰岛A细胞分泌()A.胰岛素B.降钙素C.发展激素D.生长抑素E.胰高血糖素答案:E94.自主神经的节后纤维属于()( ))(A.Aα纤维B.Aγ纤维C.Aδ纤维D.B类纤维E.C类纤维谜底:E95.骨骼肌终板膜上的受体是()( )A.α受体B.β受体C.M型受体D.N1受体E.N2受体谜底:E96.大部分交感神经节后纤维末梢开释()( )A.ATPB.乙酰胆碱C.发展抑素D.血管活性肽E.去甲肾上腺素答案:E97.十烃季胺可阻断()( )A.α受体B.β受体C.M型受体D.N1受体E.N2受体答案:E98.氯筒箭毒碱可阻断()( )A.α受体B.β1受体C.β2受体D.M型受体E.N型受体答案:E99.肾上腺素α型受体阻断剂是( )A.阿托品B.XXXC.普萘洛尔D.氯筒箭毒碱E.XXX拉明答案:E100.在传导皮肤痛觉的神经纤维中,传导慢痛的首要是()A.Aα纤维B.Aβ纤维C.Aδ纤维D.B类纤维E.C类纤维。

运筹课堂练习

运筹课堂练习

• 判断题
• 5、线性规划的可行解如果为最优解,则该可行解一 定是基可行解。( )
• 6、若线性规划问题具有可行解、且其可行域有界, 则该线性规划问题最多具有有限个数的最优解。( ) • 7、对于一个有n个变量、m个约束的标准型的线性规 划问题,其可行域的顶点恰好有 C m 个。 ( ) n • 8、若X1、X2分别是某一线性规划问题的最优解,则 X=a1X1+a2X2也是该线性规划问题的最优解,其中a1、 a2为正实数。 ( )
6
2
10 x3
8 x4
0 x5
0
0
x1 x2 21 -2 -5 [ 1 ] 4 -2
-34 22
x 6 x7
θ
5 -
0 8 1 0 4 0 2 0 1 -2 1 3 0 0 1
0 -22 0 0 -10
100
6
2 10 11 0 -5 1 -6 0
8 x4
0 x5
0
0 x6 x7 0 -2 -3
34
化标准型
min z 5 x1 6 x 2 7 x 3 x1 5 x 2 3 x 3 15 5 x1 6 x 2 10 x 3 20 s.t. x1 x 2 x 3 5 0, 0 , 无约束 x2 x3 x1
max z 5 x1 6 x 2 7 x 3 x1 5 x 2 3 x 3 15 5 x1 6 x 2 10 x 3 20 s.t. x1 x 2 x 3 5 3 x1 6 0, 0 , 无约束 x2 x3 x1
已知某线性规划问题用单纯形表计算时得到的初始单纯形表及 最终单纯形表见下列表(1)和(2),请将表中空白数字填上

FMP3217BA0-GXXX资料

FMP3217BA0-GXXX资料

Name VCC VCCQ VSS /UB /LB DNU
Function Core Power I/O Power Ground Upper Byte(I/O9~16) Lower Byte(I/O 1~8) Do Not Use
/CS1 CS2 /OE Control Logic /WE /UB /LB
• Organization : 2M x 16 • Power Supply Voltage : 2.7~3.3V • Dual CS & Page Modes
FMP3217BA0 : Dual CS FMP3217BA7 : Page mode with Dual CS
CMOS LPRAM
2M x 16 bit Super Low Power and Low Voltage Full CMOS RAM
)
Unit Min 2.7 2.25 0 0.8VCCQ -0.22) Max 3.3 2.75 0 VCC+0.21) 0.2VCCQ Min 2.7 1.65 0 0.8VCCQ -0.22) Max 3.3 1.95 0 VCC+0.21) 0.2VCCQ V V V V V
0.2VCCQ
Note : 1. Overshoot : Vcc+1.0V in case of pulse width≤20ns. 2. Undershoot : -1.0V in case of pulse width≤20ns. 3. Overshoot and undershoot are sampled, not 100% tested.
/LB X1) X1) H L
/UB X1) X1) H X1) L H L L H L L

25型系列客车

25型系列客车

25型客车25型客车是中国铁路第三代主型客车。

25型客车是用于中国铁路的车长为25.5米的铁路客车。

25型客车有为多个系列。

20世纪90年代开始逐渐替代22 型客车系列,用于干线长途列车和各大城市之间特快列车,成为中国铁路客车的主型产品。

25型客车最初于1967年开始试制生产。

1967〜1969年试制了车长25.5 米客车组也就是“轻快稳”客车组,车体材质为低合金钢,采用KZ系列转向架,构造速度为160km/h,各车均有空调,集中供电。

因当时转向架技术不成熟,使用中出现不少问题。

1978〜1985年铁道部科技规划中研制车长25.5米客车,车体为无中梁,平直墙结构,材质是耐候钢,采用209型转向架,构造速度为160km/h,发电车集中供电,1980-1981年投入运用。

1986年铁道部下达25.5米新型空调客车研制要求,使用206型转向架,构造速度为140km/h,用于京广线列车,这批车由于不符合要求并不成功。

此后,1987年开始利用国外贷款以及国外技术制造集中供电空调客车。

自1990年代开始,根据铁路客车升级换代的要求相继研制生产了一系列车长25.5米的25型客车投入运营。

25型客车系列车体长25.5m,车体宽度3.105m,车体高度4.433m,通过最小曲线半径145m。

25型客车系列结构上的特点有:车体为全焊接结构,由底架、侧墙、端墙和车顶组成。

车体钢结构采用高强度、耐腐蚀的低合金钢(耐候钢)制成。

车体结构系用无中梁无压筋薄壁筒形整体承载结构,其中底架、侧墙和车顶形成一个封闭筒形结构,承载特点为整体承载结构,底架采用无中梁结构。

各系列车型(除部25B型外)设有车顶单元式空调装置,集中供电。

安装单元式铝合金车窗,采用低磨耗低噪声的风挡及橡胶风挡以及密封式风挡。

构造速度较高,有较好的舒适性和安全性;定员比21、22型客车有所增加,每一定员所占车辆自重降低。

25型客车系列除了最初试制性铁路客车以外,主要型号有25A型、25B型、25C型、25DT型(含国产第一代200km/h高速客车)、25G型、25Z型、25K型、25T型。

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大学英语B 网考补充材料(2010年修订版–全国高校网络教育考试委员会办公室)2011-3-10第四部分:完型填空(共10小题;每小题1分,满分10分)以下短文中共包含10个未完成的句子,针对每个句子中空缺部分有4个选项,请从A、B、C、D四个选项中选出正确选项。

(1)Climate change is one of the most fundamental challenges ever to confront humanity. Its impacts are already showing and will intensify over time 21 left unchecked. There is overwhelming scientific evidence, 22 shown in the Fourth Assessment Report (第四次评估报告的综合报告)of the Intergovemental Panel on Climate Change ( IPCC)(政府间气候变化专门委员会), that climate change will threaten 23 growth and long-term prosperity, as well as the very survival of the most vulnerable populations. IPCC projections indicate that if emissions continue to rise at their current 24 and are allowed to double from their pre-industrial level, the world will face an average temperature 25 of around 3℃this century. Serious impacts are associated 26 this scenario (情景) , including sea- level rise, shifts in growing seasons, and an 27 frequency and intensity of extreme weather events such as storms, floods and droughts.The United Nations Climate Change Conference in Copenhagen in December in 2009 offers a 28 opportunity to step up international action on climate change. A Copenhagen deal is___29 the global transition into green economic growth, and, most urgently, to help the world, especially the most vulnerable, to adapt to impacts 30 are now inevitable.21. A. if B. whether C. when D. which22. A. because B. as C. while D. when23. A. economics B. economical C. economy D. economic24. A. speed B. rate C. pace D. rhythm25. A. rising B. rise C. raise D. raising26. A. with B. to C. from D. in27. A. being increased B. increased C. increase D. increasing28. A. history B. historical C. historic D. historically29. A. necessary B. inevitable C. essential to D. basic30. A. that B. of which C. who D. whatKey: ABDCB ADBCA(2)It‟s very interesting to study names of different countries. Chinese names are different ___21___ foreign names. Once an English lady came to 22 me, when I was introduced to her she said, “Glad to meet you, Miss Ping.” Then she gave me her name card with three words onit: …Betty J. Black‟. So I said, “Thank you, Miss Betty.” We looked at each other and laughed heartily. Later I found that the English people 23 their family names last and the given names 24 , while their middles are 25 used very much. I explained to her that the Chinese family name __26 first, the given name last, so she 27 never call me Miss Ping. She asked if we Chinese had a middle name. I told her we didn‟t. 28 people may often find three words on a Chinese name card. In this case the family name still comes first, and the other words after it _29 a two-word given name. It is quite usual in China. My sister is Li Xiaofang. She has two words in her given name instead of just one ___30__ mine.21. A. with B. from C. for in D. in22. A. find B. look at C. visit D. meet23. A. put B. placed C. took D. brought24. A. at the first B. at first C. in the front D. first25. A. never B. not C. / D. often26. A. came B. comes C. put D. puts27. A. would B. could C. should D. must28. A. But B. Or C. While D. And29. A. IS B. was C. are D. were30. A. as B. with C. to D. likeKey: BCADB BCACD(3)Eagle has the longest life-span of its species. Eagle can 21 70 years, but to reach this age, the Eagle must make a hard decision.___22___ its 40s, its long and flexible talons (爪) can no longer grab prey(掠食)which serve as food, its long and sharp beak (鸟嘴) becomes bent. Its old-aged and heavy wings, due to their thick feathers, comes stuck to its chest and make it __23___ to fly. Then Eagle is left with only two options: die or go through a painful process of change 24 lasts 150 days for survival.The process requires that Eagle fly to a mountain top and sit on its nest. There the Eagle knocks its beak 25 a rock until it plucks (拔去) it out. After plucking it out, Eagle will wait for a new beak to grow back. 26 its new talons grow back, the eagle starts plucking its old-aged feathers and after 5 months, eagle can take its flight of rebirth and lives for thirty __27__ years.Many times, in order to survive, we 28 start a change process. We sometimes need to 29 old memories, habits and other past traditions. Only freed from past burdens, can we 30 the present.21. A. survive B. live C. live with D. live up to22. A. In B. On C. Of D. With23. A. easy B. difficult C. hardly D. difficulty24. A. who B. what C. which D. it25. A. against B. for C. with D. on26. A. Although B. When C. Because D. Therefore27. A. fewer B. less C. many D. more28. A. have to B. will C. should D. need29 A. cherish B. get rid of C. keep alive D. remove from30. A. look forward to B. dream of C. take advantage of D. free fromKey: DABCA BDABC第六部分:写作(满分15分)要求在30分钟内,根据下面所给的题目和中文提纲用英语写出一篇不少于80词的短文。

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