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CP6920F3
60~80℃ 0.3~1.0MPa 1~2sec 190℃~ 60~80MPa 5sec
*2 *3 *4 *2 *5 *4
Remarks
*1: Bonding condition may differ depending on chip size and metal pattern. We recommend this as a starting point to determine your own optimized conditions. *2: Temperature of ACF lamination and main bonding: It is not equipment temperature, but actual temperature of ACF. *3: Pressure of ACF lamination: It is calculated based on the area of ACF lamination. *4: Time of ACF lamination and main bonding: Time from the start of bonding to the point where the temperature reaches the target. *5: The pressure is calculated based on the total area of bumps.
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10 December 2012
Conductive resistance
Actual measurement portion
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IC Pattern ITO Bonding Condition Aging Condition
: 1.8mm×20mm, t= 0.5mm Bump 30μm×85μm, Au-plated bump : ITO=10Ω/□, t=0.7mm glass : 190℃,200℃-80MPa-5sec : 85℃85%RH
50 40 30 20 10 0 0 250 Aging time [hours] 500 Max Avg.
50 40 30 20 10 0 0 250 Aging time [hours] 500 Max Avg.
Note:This report has been prepared on the basis of our reliable tests, however is not intended to guarantee the performance described hereunder.
2500
3000
1500
2000 bump area[μm ]
2
2500
3000
Note:This report has been prepared on the basis of our reliable tests, however is not intended to guarantee the performance described hereunder.
Specifications
Items Curing system 1) Cover film / color Structure and thickness 2) ACF-layer 3) NCF-layer 4) Base film / color 1) Material Conductive particles 2) Insulator coated Particle diameter Minimum overlap area of conductors Minimum conductor space Minimum bump space
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5sec 100 80 5sec
Reaction rate [%]
60 40 20 0 170
180
190 Bonding temp. [℃]
200
210
Note:This report has been prepared on the basis of our reliable tests, however is not intended to guarantee the performance described hereunder.
Note:This report has been prepared on the basis of our reliable tests, however is not intended to guarantee the performance described12
1) 2)
Space between neighboring circuits. Space between bumps.
*1: The contact area needs to trap at least three particles (average -4.5δ) and where the faced conductor overlaps.
Bonding conditions and Properties
Bonding conditions *1
items Temperature ACF laminating conditions Pressure Time Temperature Main bonding conditions Pressure Time
I V
Pattern in IC Bump Pattern on glass
Current input
Voltage measurement
<190℃,80MPa,5sec>
<200℃,80MPa,5sec>
60
60
Conductive Resistance [Ω]
Conductive Resistance [Ω]
Paticle Capture on a bump(Statistics) 35
particle capture(psc)
particle capture[pcs]
MAX AVG MIN
30 25 20 15 10 5 0 1000
AVG-3σ AVG-4.5σ
1500
2000 bump area[μm 2 ]
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10 December 2012
Particle capture
IC Pattern ITO : 1.8mm×20mm, t= 0.5mm, Au-plated bump : ITO=10Ω/□, t=0.7mm glass
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Particle Capture on bump 60 55 50 45 40 35 30 25 20 15 10 5 0 1000
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CP6920F3
Epoxy-Anion 25μm / transparent 10μm 10μm 38μm / white Au/Ni plated resin Yes 3μm 1300μm2 12μm 10μm
*1
Remarks
1) 2) 3) 4)
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Reaction rate
IC Pattern ITO Bonding Condition Measurement : : : : 1.8mm×20mm, t= 0.5mm ITO=10Ω/□, t= 0.7mm glass 180℃-200℃,80MPa,5sec FT-IR Method
Properties of cured ACF
items Elastic modulus at 30℃
CP6920F3
2.6GPa 146℃
DMA DMA, tanδ peak
Remarks
Glass transition temperature (Tg)
Note:This report has been prepared on the basis of our reliable tests, however is not intended to guarantee the performance described hereunder.
Bump Pattern on glass
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R
1.E+13
Insulation Resistance [Ω]
1.E+12 1.E+11 1.E+10 1.E+09 1.E+08 1.E+07 0 250 Aging time [hours] 500 Max Avg Min
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Insulation resistance
IC Pattern ITO Bonding Condition Aging Condition : : : : 1.5mm×13mm, t= 0.5mm, Au-plated bump ITO=10Ω/□, t=0.7mm glass 190℃-80MPa-5sec Pattern in IC 85℃85%RH
Note on the characteristic data given - Data on the characteristics of the products described in this document based on the results of evaluations carried out by the company. This does not guarantee that the characteristics of the product conform with your usage environment. Before use, review the usage conditions based on evaluation data obtained from the equipment and substrates actually used.
Note:This report has been prepared on the basis of our reliable tests, however is not intended to guarantee the performance described hereunder.
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10 December 2012
TO BE KEPT SECRETS FROM OUTSIDERS
10 December 2012
TECHNICAL REPORT
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CP6920F3
Anisotropic Conductive Film for Chip on Glass
Products Development Department Advanced Material Division
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