低温多晶硅TFT-LCD异军突起

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低温多晶硅薄膜晶体管液晶显示技术（LTPSTFT

低温多晶硅薄膜晶体管液晶显示技术（LTPS TFT北方彩晶集团谷至华2005年1月由于多晶硅电学性能上的优势，可以实现玻璃基板上的驱动集成（CHIP ON GLASS 简写COG）,系统集成（SYSTEM ON GLASS 简写SOG），可以现实更高分辨率，更快的响应速度，稳定性，可靠性更高的显示器件，低温多晶硅是TFT-LCD产业发展的方向。

该领域涉及主要产品及技术主要产品:手机、数码相机、便携视听产品，车载移动终端，高级计算机显示器等。

技术：低温多晶硅薄膜晶体管液晶显示器（Lp-Si TFT－LCD）技术涉及集成电路设计、信号转换、薄膜技术、液晶显示技术、激光技术、界面处理技术等，低温多晶硅薄膜晶体管液晶显示器是目前世界上最新的技术，代表了一个国家的平板显示产业的技术水平。

1.技术及产品发展现状LTPS TFT物理电学特性较a-Si TFT性能更加优异，具有更高的集成度，可以实现驱动电路的集成，甚至计算机系统的集成，外接元件大量减少，器件的性能得到大幅度提升，更加稳定，更加可靠，而器件的成本会更加低。

是平板显示技术的发展方向。

但是由于技术难度比较大，特别是大面积激光退火技术具有非常大的工艺挑战性。

目前只有日本东芝和松下在新加坡投资的4.5五代线可以生产17英寸的多晶硅液晶显示器，其他公司基本上只能处理手机和移动终端的小尺寸的多晶硅。

多晶硅TFT-LCD还是投影显示领域的核心技术之一。

是数字化电影院建设的关键部件，在教育、办公和大屏幕投影家庭影院领域也有巨大的市场。

随着LTPS技术的逐渐成熟，在未来的10年中，LTPS将成为平板显示领域的核心技术，有机电致发光，厚膜无机电致发光都需要LTPS技术，大尺寸液晶电视也期待着LTPS的应用。

LTPS作为平板显示器产业的重大潜在核心技术受到国际上科研和产业界的高度重视。

通过对早期TFT-LCDa-Si TFT生产线改造，投入少，可以使产业迅速升级。

目前国际上3代一下的非晶硅TFT-LCD生产线基本上都已经改造成为多晶硅生产线。

TFT LCD产业现状

TFT LCD产业现状tft-lcd产业现状tft(thinfilmtransistor，薄膜晶体管)lcd(liquidcrystaldisplay，液晶显示器)是有源矩阵类型液晶显示器(activematrixlcd，am-lcd)中的一种。

它具有低功耗、轻薄易用、高亮度、高对比度、高响应速度、无辐射、无闪烁、适用范围宽、生产成品率高、易于集成化和更新换代等特点，目前已成为平板显示产业的主流技术之一。

小到智能手机、数码相机、电子表，大到平板电视、各种尺寸的显示器，都在大量采用tft-lcd屏。

tft-lcd的主要原材料包含液晶、玻璃基板、背光模组、彩色滤光片、偏光片、驱动电路、化学气体与材料、外框、各类薄膜及其他材料。

其中，液晶、玻璃基板、滤光片、偏光片等关键原材料主要掌控在日本、韩国、德国、美国企业手中。

我国台湾地区生产了全球50%以上的大尺寸tft-lcd驱动ic，PCB了全球80%以上的大尺寸tft-lcd驱动ic，并且就是背光模组的关键产地。

主流的tft面板有a-si(amorphoussilicon，非晶硅)tft技术和ltps(lowtemperaturepoly-silicon，低温多晶硅)tft技术。

其中大部分采用a-sitft制造技术，一些小尺寸产品采用ltps技术。

ltpstft与a-sitft相比能够提供更亮、更精细的画面，并且更轻薄、更省电。

目前，液晶显示已经占有了平板表明市场的主导地位，为同时实现响应速度更慢、分辨率更高、色彩更多样、尺寸更大的显示屏，企业和研究机构仍在不断研发代莱技术，存有特定光电性质的无机、有机膜材料，用作液晶分子价值观念的高分子材料，以及背光led等新材料。

(2)我国tft-lcd产业发展现状1998年从日本引入第一条1代生产线掀开了我国tft-lcd产业的发展历史，2021年随着京东方全面收购韩国现代电子的液晶业务，我国tft-lcd产业发展也步入快车道，各地生产线项目纷纷上马，至目前为止已经初具规模，构成了为北京为核心的环渤海产业基地;以合肥、南京、苏州和昆山为核心的长江三角洲产业基地;以深圳、广州为代表的珠江三角洲表明产业基地;以成都为核心的西部产业基地。

LTPS低温多晶硅技术浅析

LTPS低温多晶硅技术浅析一、LTPS简介低温多晶硅（Low Temperature Poly-silicon；LTPS，以下以LTPS代称）是平板显示器领域中的又一新技术。

继非晶硅（Amorphous-Silicon，以下以a-Si代称）之后的下一代技术。

Polysilicon (多晶硅) 是一种约为0.1至数个um大小、以硅为基底的材料，由许多硅粒子组合而成。

在半导体制造产业中，多晶硅通常经由LPCVD(Low Pressure Chemical Vapor Deposition)处理后，再以高于900C的退火程序，此方法即为SPC (Solid Phase Crystallization) 。

然而此种方法却不适合用于平面显示器制造产业，因为玻璃的最高承受溫度只有650℃。

因此，LTPS技术即是特別应用在平面显示器的制造上。

传统的非晶硅材料（a-Si）的电子迁移率只有0.5 cm2/V‧S，而低温多晶硅材料（LTPS）的电子迁移率可达50～200 cm2/V‧S，因此与传统的非晶硅薄膜电晶体液晶显示器（a-Si TFT-LCD）相比，低溫多晶硅TFT-LCD具有更高解析度、反应速度快、亮度高(开口率aperture ratio高)等优点，同时可以将周边驱动电路同时制作在玻璃基板上，达到在玻璃上集成系统（SOG）的目标，所以能够节省空间和成本此外，LTPS技术又是发展主动式有机电致发光（AM-OLED）的技术平台，因此LTPS技术的发展受到了广泛的重视。

二、非晶硅（a-Si）与低温多晶硅（LTPS）的区别一般情况下低温多晶硅的制程温度应低于摄氏600℃，尤其对LTPS区别于a-Si制造的制造程序“激光退火”（laser anneal）要求更是如此。

与a-Si相比，LTPS的电子移动速度要比a-Si 快100倍，这个特点可以解释两个问题：首先，每个LTPS PANEL 都比a-Si PANEL反应速度快；其次，LTPS PANEL 外观尺寸都比a-Si PANEL小。

ltps工艺技术介绍

ltps工艺技术介绍LTPS工艺技术，全称为低温多晶硅技术（Low Temperature Poly-Silicon），是一种在低温下制备多晶硅的工艺技术。

它在显示屏制造领域广泛应用，特别是在智能手机和平板电脑的屏幕制造上。

LTPS工艺技术相对于传统的TFT-LCD工艺技术具有很多优势，下面我们来介绍一下。

首先，LTPS工艺技术可以制造出更高分辨率和更高精度的屏幕。

多晶硅的晶粒更小，可以在同样的面积上装下更多的晶粒，从而提高分辨率。

同时，LTPS工艺技术可以制造出更细腻的像素点，使显示效果更加细腻和真实。

其次，LTPS工艺技术可以提高屏幕的响应速度。

在传统的TFT-LCD工艺技术中，液晶分子移动的速度有限，导致刷新速度较慢，容易出现动态模糊现象。

而LTPS工艺技术采用了更高质量的多晶硅材料，可以使晶体管开关速度更快，从而提高屏幕的响应速度，减少动态模糊现象的发生。

另外，LTPS工艺技术可以节省能源和降低功耗。

在传统的TFT-LCD工艺技术中，需要使用背光模组来提供光源，而LTPS工艺技术采用了自发光的设计，可以直接通过薄膜晶体管激活像素，减少了能量传递过程中的损耗，从而达到节能和降低功耗的效果。

此外，LTPS工艺技术还可以制造出更薄更轻的屏幕。

相比于传统的TFT-LCD工艺技术，LTPS工艺技术所需要的驱动电路更小更精简，可以减少屏幕的厚度和重量，提高设备的便携性。

最后，LTPS工艺技术还可以提高屏幕的可靠性和寿命。

多晶硅具有更好的稳定性和耐用性，可以抵抗氧化和老化的影响，从而延长屏幕的使用寿命。

同时，LTPS工艺技术可以减少杂散电流和漏电流的发生，提高屏幕的稳定性和可靠性。

总之，LTPS工艺技术在显示屏制造领域具有广泛的应用前景。

它可以制造出更高分辨率、更高精度、更快响应速度、更节能、更薄轻、更可靠的屏幕，满足了现代科技产品对屏幕显示质量的要求，推动了智能手机和平板电脑等设备的发展。

随着技术的进步和创新，相信LTPS工艺技术在未来还将有更多的突破和应用。

低温多晶硅

Low-Temperature Polysilicon Thin-Film Transistor Driving with Integrated Driver for High-Resolution Light Emitting Polymer Display Mutsumi Kimura,Ichio Yudasaka,Sadao Kanbe,Hidekazu Kobayashi,Hiroshi Kiguchi,Shun-ichi Seki,Satoru Miyashita,Tatsuya Shimoda,Tokuro Ozawa,Kiyofumi Kitawada,Takashi Nakazawa,Wakao Miyazawa,and Hiroyuki OhshimaAbstract—A high-resolution low-temperature polysilicon thin-ﬁlm transistor driven light emitting polymer display(LT p-Si TFT LEPD)with integrated drivers has been developed.We adopted conductance control of the TFT and optimized design and voltage in order to achieve good gray scale and simple pixel circuit.A p-channel TFT is used in order to guarantee reliability in dc bias.An inter-layer reduces parasitic capacitance of bus lines. Because of the combination of the LT p-Si TFT and LEP,the display is thin,compact,and lightweight,as well as having low power consumption,wide viewing angle,and fast response.I.I NTRODUCTIONL OW-TEMPERATURE polysilicon thin-ﬁlm transistors (LT p-Si TFT’s)have been utilized to drive liquid crystal displays(LCD’s)[1]–[3].There are many candidates for active matrix devices,i.e.,single-crystal Si MOS FET, amorphous Si TFT,high-temperature p-Si TFT,LT p-Si TFT, other semiconductor devices,etc.Among the candidates,only the LT p-Si TFT has performance high enough to compose integrated driver circuits and the capability of being fabricated on a large transparent substrate simultaneously.Additionally, it has already been reported that the LT p-Si TFT can also be fabricated on a plastic substrate[4].These advantages of the LT p-Si TFT allow the present great successes to come true in LCD’s,not only in research and development,but also in the market.However,the LT p-Si TFT is not only for LCD’s.The LT p-Si TFT’s have great potential even for other displays which have integrated driver circuits and are large sizes[5]. On the other hand,light emitting polymers(LEP’s)[6]–[8] promise to achieve thin,compact,lightweight,and inexpen-sive displays.Moreover,the display can have low power consumption,wide viewing angle,and fast response.Until now,for LEP displays(LEPD’s),mainly static and passive matrix driving methods have been utilized.However,for high-resolution displays consisting of many pixels,needless to say, the static method cannot drive the LEP.The passive matrix Manuscript received October1,1998;revised June1,1999.The review of this paper was arranged by Editor J.Hynecek.M.Kimura,I.Yudasaka,S.Kanbe,H.Kobayashi,H.Kiguchi,S. Seki,S.Miyashita,and T.Shimoda are with Base Technology Research Center,Seiko Epson Corporation,Owa Suwa392-8502,Japan(e-mail: kimura.mutsumi@exc.epson.co.jp).T.Ozawa,K.Kitawada,T.Nakazawa,W.Miyazawa,and H.Ohshima are with L Project,Seiko Epson Corporation,Owa Suwa392-8502,Japan. Publisher Item Identiﬁer S0018-9383(99)09015-2.method cannot drive the LEP,either[9],because the high-resolution display demands high voltage in the short scanning period in order to achieve the required average brightness,and this high voltage results in a lower power efﬁciency of the light emitting.Accordingly,instead of the static or passive matrix driving method,an active matrix driving method is better for high-resolution display as the pixels may be driven close to their best power efﬁciency point.Since the LEPD is not a cell structure,i.e.,liquid layer and two sandwiching substrates,it does not need the second substrate.Moreover,the LEPD does not need a backlight,light guide,polarizer,diffuser,etc.,which are used in the LCD. Therefore,the display consists of one substrate,peripheral drivers,and many contacts between them.The next target is to eliminate the peripheral drivers and contacts.If the peripheral drivers are replaced by monolithic drivers integrated on the substrate,not only can the peripheral drivers be eliminated, but the number of contacts can also be decreased.The display is dramatically reduced to only one substrate.As a result,the display will be exceedingly thin,compact,lightweight,and inexpensive.Because of the advantage of the wide viewing angle,the LEPD is suitable for direct view applications.Most applica-tions such as these are large size displays.In the case of the current LEPD structure,since the polymers and cathode metal are serially stacked on the substrate and light emits through the substrate,the substrate must be transparent.Therefore,for the device to drive the LEPD,the capability of fabrication on a large transparent,i.e.,glass or plastic,substrate is needed. In conclusion,in order to drive the high-resolution LEPD, the active matrix device is needed and it must have enough performance to compose integrated drivers and have the ca-pability to be fabricated on the large transparent substrate, simultaneously.Only the LT p-Si TFT can satisfy these demands.Therefore,the objective of our development in this paper is to conﬁrm how the LT p-Si TFT is suitable to drive the high-resolution LEPD.A high-resolution LT p-Si TFT LEPD with integrated drivers is designed,fabricated,and evaluated[10].We adopted conductance control of the TFT and optimized design and voltage in order to achieve good gray scale and simple pixel circuit.A p-channel TFT is used in order to guarantee reliability in dc bias.An inter-layer reduces0018–9383/99$10.00©1999IEEEFig.1.Cross-sectional view of the LT p-Si TFT LEPD.LT p-Si TFT’s are fabricated the same as the TFT-LCD.Light comes through the glass substrate. Since the TFT-LEPD needs only some thinﬁlms on one substrate,very thin, compact,lightweight,and inexpensive displays can be achieved.The function of the inter-layer is to distance the cathode and to reduce parasitic capacitance of bus lines.parasitic capacitance of bus lines.The display is thin,compact, lightweight,low power consumption,wide viewing angle,and fast response.II.S TRUCTUREA cross-sectional view of the TFT-LEPD is shown in Fig.1.First,on a glass substrate,LT p-Si TFT’s,bus lines, and pixel electrode are fabricated the same as they are in the TFT-LCD[1],[2].A50-nm a-Si is formed by LPCVD of Si at425KrF excimer laser.Phosphorous ions for n-channel TFT’s and boron ions for p-channel TFT’s are implemented with a dose of the10cm order at an energy of several ten keV.These impurities are activated at 300C for4h.The TFT characteristics are shown in Fig.2.Mobility for n-channel TFT and p-channel TFT is 120cm s and40cm s,respectively.In the case of the LCD,the ITO pixel electrode is used in order to apply voltage to the liquid crystal.On the other hand,in the case of the LEPD,the ITO pixel electrode is used as an anode in order to supply current to the LEP.Next,an adhesive layer,inter-layer are fabricated.The function of the SiOplasma surface operation is done in order to improve the wettability of the surface of the polyimide and ITO.After that,LEP layer consisting of a conductive polymer and a light emission layer,and a cathode metal are fabricated in succession[8].First,polyethylene dioxythiophene/polystylene sulphonate(PEDOT/PSS)are dispersed in water and spin-coated.Since the surface of the substrate is wettable by OFig.3.Pixel circuit of the TFT-LEPD.A pixel is composed of a switching and driving TFT,a storage capacitor,and an LEP diode.Conductance dependence of the driving TFT is used in order to control gray scale.By this method,the pixel circuit can be simple.and reduce degradation caused by self-heating[12],[13].The scan and signal drivers are integrated around the image area on the substrate and their workings are the same as those used in TFT-LCD’s.The mechanism for scanning,i.e.,for transferring each signal voltage to the corresponding storage capacitor,is similar to that used in TFT-LCD’s.The only difference is that the signal voltage stored in the capacitor does not have to be ac,but can be dc,because the LEP diode is driven by dc current and the driving TFT should control the LEP diode by dc voltage.Therefore,it is possible to reduce the amplitude of the signal voltage and scan voltage.The signal voltage stored in the capacitor is also applied to the gate terminal of the driving TFT.The gate voltage controls conductance of the driving TFT and anode voltage depends on the relationship between the resistance of the driving TFT and LEP diode.That is,by varying signal voltage,current through the LEP from the supply line via the anode to the cathode and light emission can be modulated.In the bright state,since the resistance of the driving TFT is negligible compared to that of the LEP diode,there is little voltage drop and wasted power consumption in the driving TFT.The power reduction in the bright state is very meaningful because the current is larger than other states. There are only two TFT’s in a pixel.This structure is conventional for current consuming devices,such as the LEP diode,and there are some disadvantages,for example,nonuni-formity caused by variation of the characteristic between the driving TFT’s.However,we chose this structure because the simplicity is very practical when we avoid the yield rate problem in mass production.Next,the design and voltage were optimized.The driving TFT cannot work in the saturation region for all the gate voltages even if its design parameter is varied.There are two reasons.Theﬁrst reason is low drain voltage.In order to reduce the power consumed in the driving TFT in the bright state,the resistance of the driving TFT should benegligible Fig.4.Operation point analysis of the driving TFT and LEP diode.Hori-zontal and vertical axis are voltage of the terminal between the driving TFT and the LEP diode and current through the driving TFT and the LEP diode. The characteristics of the driving TFT corresponding to each gate voltage and the characteristic of the LEP diode are overlapped.The cross points of the characteristics mean operational points of the pixel equivalent circuit. compared to the resistance of the LEP diode.This means that the voltage drop between the drain and the source terminal,i.e., drain voltage,is rather small.In addition,since the efﬁciency of the light emission from the LEP becomes very high and its threshold voltage becomes very low,recently,only about 5V must be applied to the LEP diode for sufﬁcient light emission.The second reason is that,as shown in Fig.2,the LT p-Si TFT has no saturation region deﬁned clearly,i.e.,a ﬂat characteristic which is independent of the drain voltage, because of many defects in the channel[14].If a TFT worked in the saturation region,it would be easy to calculate the current because the current would mainly depend only on the gate voltage.However,since the TFT works in the nonsaturation region,it is very difﬁcult to calculate the current by analytical calculation.The reason is as follows. The current depends on not only the gate voltage but also the drain voltage.The drain voltage is decided by the relationship of the resistance between the driving TFT and the LEP diode. This relationship is not decided until the current is decided because both the TFT and the LEP diode are nonlinear electric devices for applied voltages.Because of such a complicated mechanism,operational point analysis or circuit simulation by a computer is needed to perform the design.Fig.4shows operational point analysis of the pixel equiva-lent circuit to achieve gray scale.The horizontal axis is voltage of the terminal between the driving TFT and the LEP diode, which is drain voltage of the driving TFT and anode voltage of the LEP diode,simultaneously.The vertical axis is drain current of the driving TFT,which is same as the current through the LEP diode.The characteristics of the driving TFT corresponding to each gate voltage,which is the signal voltage stored in the storage capacitor,are overlapped.The characteristic of the LEP diode is also overlapped.The cross points of the characteristics of the driving TFT and the LEP diode mean operational points of the pixel equivalent circuit for each gate voltage.Circuit simulation with a TFT and LEP model[15]was done in order to design the driving TFT and LEP diode circuit including gray scale.These models are extracted from the measured data.Fig.5shows a simulated current–voltageFig.5.Simulated current–voltage (I 0V )characteristic of the driving TFT and LEP diode.Horizontal and vertical axis are signal voltage and current through the LEP diode,respectively.Gray scale can be acquired by optimizing all the design parameters.Signal voltage can be adjusted within a range of less than 5V.TABLE IS PECIFICATIONS AND D ESIGN P ARAMETERS OF THE TFT-LEPD.D ESIGNP ARAMETERS W ERE O PTIMIZED BY C IRCUIT S IMULATIONS .A H IGH -R ESOLUTIONLT p-Si TFT LEPD WITH I NTEGRATED D RIVERS H AS B EEN FABRICATED()characteristic of the equivalent circuit consisting of the driving TFT and LEP diode.The horizontal axis is signal voltage,which is applied to the gate terminal of the driving TFT.The vertical axis is current through the driving TFT and LEP diode.Gray scale from the bright state via the halftone state to the dark state can be acquired.By such analyses and simulations,for the given area of the LEP,the design of the driving TFT,i.e.,width and length,is optimized.Signal voltage can be adjusted within a range of less than 5V,which may achieve very low power consumed in video signal circuit in the peripheral controller.After that,the entire design of the TFT-LEPD,i.e.,the switching TFT,storage capacitor,etc.,is decided.All the optimized design parameters and speciﬁcations of the TFT-LEPD are shown in Table I.B.P-Channel TFT for Reliability in DCIn order to ensure the reliability of the driving TFT even when dc voltage is applied,a p-channel TFT is used.Fig.6shows a comparison of the reliability by measurement between an n-channel and p-channel TFT.Initial transfer characteristics and those after dc stress,i.e.,gate voltage 20V,drain voltage 0V,temperature 70m,while that of SiOm.From thesevalues,capacitance between the signal line and cathode is 3.1pF.By adding other capacitance,total capacitance of the signal line is 10.5pF.Resistance of the signal line itself is330at most.Therefore,the time constant of the signal line is on the order of 10ns.This panel is designed for the point-at-time driving scheme [16],which means that during application of scan voltage,each signal voltage is applied sequentially.The selecting time for one signal line is 240ns.Since the time constant is enough smaller than the selecting time,correct signal can be applied to the signal line.D.OthersThe LEP layer,i.e.,the conductive layer and the light emitting layer,is not patterned.However,crosstalk of light emission between pixels does not occur.The reason is asFig.7.View overlooking the TFT-LEPD.Because of no backlight,light guide,polarizer,diffuser,peripheral drivers,etc.,the TFT-LEPD can be lightweight,thin,andcompact.Fig.8.Photographs of pixels and electroluminescence from the pixels.Since the light emission area ratio is at most 12%,reﬂection from cathode metal is reduced and contrast can be improved if the rest of the pixel is covered with a light shield layer.follows.Since the electric resistivity of the conductive layer is about 1k/sq and its resistance betweenpixelsis.The resistance is much higher than the LEP diode resistance,the orderof.Moreover,the electric resistivity of the light emitting layer between pixels is still higher than that of the conductive layer.As a result,the LEP diode can be supposed to be electrically separated between each pixel.IV.R ESULTSA high-resolution LT p-Si TFT LEPD with a scan and signal integrated driver has been fabricated.The speciﬁcations have already been shown in Table I.A view overlooking the TFT-LEPD is shown in Fig.7.No backlight,light guide,polarizer,diffuser,and peripheral drivers are needed.The number of contacts between the peripheral controller and the panel is reduced to only 27.Twenty-six of the contacts are through a ﬂexible tape and one contact is through a wire pasted on the cathode.Consequently,the TFT-LEPD can be exceedingly lightweight,thin,and compact,as shown in Table I.Here,the second glass substrate is used only for encapsulation of the LEP and supporter,which can be eliminated easily in the nearfuture.Fig.9.Display image of the TFT-LEPD.Green monochrome display image is acquired.Neither nonuniformity nor crosstalkoccurs.Fig.10.Measured and simulated gray scale.Brightness is normalized by the maximum value.The measured gray scale is similar to the simulated one.It is found that good gray scale from the bright state via the halftone state to the dark state can be acquired.Photographs of pixels and electroluminescence from the pixels are shown in Fig.8.The light emission area ratio,i.e.,the ratio between light emission area and whole area in a pixel,is at most 12%.In spite of the small ratio,there is no serious problem because all light comes from the light emission area,no light loss occurs,and power is not wasted.On the contrary,the small ratio can reduce reﬂection from cathode metal.If the rest of the pixel is covered with a light shield layer,all reﬂection from the display can be reduced and contrast can be improved.A display image of the TFT-LEPD is shown in Fig.9.Here,a green monochrome display is acquired.Neither nonunifor-mity caused by the parasitic capacitance of the bus lines nor crosstalk between pixels occurs.Measured and simulated gray scale is shown in Fig.10.Here,brightness is normalized by the maximum value.The measured gray scale is similar to the simulated one.It is found that good gray scale from the bright state via the halftone state to the dark state can be acquired.The achieved power consumption with the voltage and current are listed in Table II.The power consumed in the integrated driver is 20mW.In order to achieve brightness of 100Cd/mTABLE IIV OLTAGE ,C URRENT AND P OWER OF THE TFT-LEPD.T OTAL P OWER C ONSUMPTION OF THE TFT-OELD IS C OMPARABLE WITH T HAT OF THE TFT-LCD.C URRENT D ENSITY OF THE LEP I S 18mA/cm 2AND E FFICIENCY OF THE LEP I S A BOUT 3Lm/Wimage is darker or smaller,the power consumption is still less.It is comparable with or smaller than that of the TFT-LCD.V.C ONCLUSIONA high-resolution LT p-Si TFT LEPD with a complete set of the integrated drivers has been developed and published for the ﬁrst time in the world.We adopted conductance control of the TFT and optimized design and voltage in order to achieve good gray scale and simple pixel circuit.A p-channel TFT is used in order to guarantee reliability in dc bias.An inter-layer reduces parasitic capacitance of bus lines,and so on.Because of the combination of the LT p-Si TFT and LEP,the display is thin,compact and light weight.Additionally,the display has low power consumption,wide viewing angle,and fast response,which are achieved only from the nature of the LEP.The image is uniform and crosstalk does not occur.The fabrication processes of the TFT are the same as those for the LCD except for some additions and LEP processes.Therefore,if the TFT-LEPD proves to be superior to the TFT-LCD for some applications,present LT p-Si TFT fabrication lines for the LCD’s can be easily changed to those for the LEPD.A CKNOWLEDGMENTThe authors wish to thank Dr.R.H.Friend,Dr.J.H.Burroughes,Dr.C.R.Towns,Dr.K.Heeks,Dr.J.C.Carter,and Dr.I.Grizzi of Cambridge Display Technology Ltd.,for fruitful collaboration of the TFT-LEPD and fabrication of the LEP.R EFERENCES[1]H.Ohshima,“Overview of polysilicon technology,”in Proc.EuroDisplay Workshop ,1996,pp.17–20.[2]S.Inoue,M.Matsuo,K.Kitawada,S.Takenaka,S.Higashi,T.Ozawa,Y.Matsueda,T.Nakazawa,and H.Ohshima,“425 C poly-Si TFT technology and its application to large size LCD’s and integrated digital data drivers,”in Display ,1995,pp.339–342.[3]Y.Matsueda,T.Ozawa,M.Kimura,T.Ito,K.Kitawada,T.Nakazawa,and H.Ohshima,“A 6-bit-color VGA low-temperature poly-Si TFT-LCD with integrated digital data drivers,”in SID Dig.Tech.Papers ,1998,pp.879–882.[4]N.D.Young,R.M.Bunn,R.W.Wilks,D.J.McCulloch,G.Harkin,S.C.Deane,M.J.Edwards,and A.D.Pearson,“AMLCD’s and electronics on polymer substrates,”in Proc.Euro Display ,1996,pp.555–558.[5]T.P.Brody,“Birth of the active matrix,”Inform.Display ,vol.10,pp.28–32,1997.[6]R.H.Friend,“Organic electroluminescent displays,”in SID SeminarLecture Notes ,1998,vol.2,F-1,pp.1–27.[7]J.H.Burroughes,D.D.C.Bradley,A.R.Brown,R.N.Marks,K.Mackay,R.H.Friend,P.L.Burns,and A.B.Holmes,“Light-emitting diodes based on conjugated polymers,”Nature ,vol.347,pp.539–541,1990.[8]J.C.Carter,I.Grizzi,S.K.Heeks,cey,tham,P.G.May,O.Ruiz de los Panos,K.Pichler,C.R.Towns,and H.F.Wittmann,“Operating stability of light-emitting polymer diodes based on poly(p-phenylene vinylene),”Appl.Phys.Lett.,vol.71,pp.34–36,1997.[9]R.M.A.Dawson,Z.Shen,D.A.Furst,S.Connor,J.Hsu,M.G.Kane,R.G.Stewart,A.Ipri,C.N.King,P.J.Green,R.T.Flegal,S.Pearson,W.A.Barrow,E.Dickey,K.Ping,C.W.Tang,S.V.Slyke,F.Chen,J.Shi,J.C.Sturm,and M.H.Lu,“Design of improved pixel for a polysilicon active-matrix organic LED display,”in SID Dig.Tech.Papers ,1998,pp.11–14.[10]T.Shimoda,H.Ohshima,S.Miyashita,M.Kimura,T.Ozawa,I.Yudasaka,S.Kanbe,H.Kobayashi,R.H.Friend,J.H.Burroughes,and C.R.Towns,“High-resolution light emitting polymer display driven by low-temperature polysilicon thin-ﬁlm transistor with integrated driver,”in Display ,1998,pp.217–220.[11]S.Morozumi,K.Oguchi,S.Yazawa,T.Kodaira,H.Ohshima,and T.Mano,“B/W and color LC video displays addressed by poly Si TFT’s,”in SID Dig.Tech.Papers ,1983,pp.156–157.[12]S.Inoue and H.Ohshima,“New degradation phenomenon in widechannel poly-Si TFT’s fabricated by low temperature process,”in IEDM Tech.Dig.,1996,pp.781–784.[13]S.Inoue,H.Ohshima,and T.Shimoda,“Analysis of threshold voltageshift caused by bias stress in low temperature poly-Si TFT’s,”in IEDM Tech.Dig.,1997,pp.527–530.[14]G.A.Armstrong,S.Uppal,S.D.Brotherton,and J.R.Ayres,“Dif-ferentiation of effects due to grain and grain boundary traps in laser annealed poly-Si thin-ﬁlm transistors,”Jpn.J.Appl.Phys.,vol.37,pp.1721–1726,1998.[15]M.Kimura,T.Ozawa,K.Ozawa,and H.Ohshima,“Numerical TFTmodel for circuit simulation using spline interpolation with transforma-tion by y =x +log(x ),”in Dig,Tech.Papers AM-LCD ,1998,pp.181–184.[16]M.Kimura,T.Ozawa,and H.Ohshima,“Simulation of horizontalcrosstalk in point-at-time scheme with matrix parametric model,”in Dig.Tech.Papers AM-LCD ,1996,pp.317–320.Mutsumi Kimura was born in Japan on October 5,1966.He received the B.S.and M.S.degrees in physical engineering from Kyoto University,Japan,in 1989and 1991,respectively.He joined Matsushita Electric Industrial Co.,Ltd.,Moriguchi Osaka,in 1991.In 1995,he joined Seiko Epson Corporation,Owa Suwa,Japan,where he has been working on TFT simulator development and TFT-LEPD development at the Base Technology Research Center.Ichio Yudasaka was born in Nagano,Japan,on March 22,1948.He received the B.S.degree in atomic nuclear engineering from Tohoku University,Japan,in 1971.He joined Hitachi Co.,Ltd.,Hitachi,Japan,in 1971.In 1979,he joined Seiko Epson Corporation,Owa Suwa,Japan,where he has been working on R&D of p-Si TFT at the Base Technology Research Center.Sadao Kanbe was born in Gunma,Japan,in May 1947.He received the B.S.degree in chemical engineering from Tokyo Institute of Technology,Japan,in 1971.In 1972,he joined Seiko Epson Corporation,Owa Suwa,Japan,where he has been working on R&D of materials for display.Hidekazu Kobayashi was born in Nagano,Japan,on November 8,1960.He received the B.S.and M.S.degrees in synthetic chemistry from Kyoto University,Japan,in 1983and 1985,respectively.In 1985,he joined Seiko Epson Corporation,Owa Suwa,Japan,where,until 1997,he was working on liquid crystal development.He is currently working on OELD development at the Base Technology Research Center.Hiroshi Kiguchi was born in Nagano,Japan,on January7,1966.He received the B.S.degree in chemistry from Shizuoka University,Japan,in1989.In1989,he joined Seiko Epson Corporation,Owa Suwa,Japan,where he has been working on development of ink-jet technologies for industry at the Base Technology Research Center.Shun-ichi Seki was born in Nagano,Japan,on June6,1968.He received the B.S.and M.S.degrees in physics from Science University of Tokyo, Japan,in1992and1994,respectively.He had been working on pie-conjugated pigment and photosensitive proteins in halobacteria at the Institute of Physical and Chemical Research,Riken, Tsukuba,Japan.In1997,he joined Seiko Epson Corporation,Owa Suwa, Japan,where he has been working on development of ink-jet technologies for LEP at the Base Technology Research Center.Satoru Miyashita was born in Nagano,Japan,on September1,1958. He received the B.S.degree in applied chemical engineering from Keio University,Japan,in1981.In1982,he joined Seiko Epson Corporation,Owa Suwa,Japan,where he has been working on functional materials research and novel process development.He is a Research Manager at the Base Technology Research Center.Tatsuya Shimoda was born in Tokyo,Japan,in1952.He received the B.S. and Ph.D.degrees from University of Tokyo,Japan,in1977and1987, respectively.In1977,he joined Seiko Epson Corporation,Owa Suwa,Japan.Since then,he has been involved in researching and developing functional materials and thin-ﬁlm devices,such as rare-earth magnets,magneto-optical media, semiconductor laser,p-Si TFT,organic EL,etc.He is now a Director of the Base Technology Research Center,and a Guest Professor of Japan Institute Science and Technology(JAIST).Tokuro Ozawa was born in Yamanashi,Japan,on December13,1966.He received the B.S.degree in image science from Chiba University,Japan,in 1990.In1990,he joined Seiko Epson Corporation,Owa Suwa,Japan,where he has been working on the design of TFT-LCD at L Project.Kiyofumi Kitawada was born in Nagano,Japan,on July15,1964.He received the B.S.and M.S.degrees in plasma physics from Kanazawa University,Japan,in1991.In1991,he joined Seiko Epson Corporation,Owa Suwa,Japan,where he has been working on R&D of polysilicon TFT technologies at L Project. Takashi Nakazawa received the B.S.degree from Nihon University,Japan, in1981.In1981,he joined Seiko Epson Corporation,Owa Suwa,Japan,where he has been working on R&D of polysilicon TFT technologies,and is a Manager of L Project.Wakao Miyazawa was born in Nagano,Japan,on August22,1951.In1970,he joined Seiko Epson Corporation,Owa Suwa,Japan,where he has been working on R&D of polysilicon TFT technologies,and is a Manager of L Project.Hiroyuki Ohshima was born in Okayama,Japan,on May5,1956.He received the B.S.degree in engineering from Tokyo University,Japan,in 1979.In1979,he joined Seiko Epson Corporation,Owa Suwa,Japan,where he has been working on R&D of active-matrix devices,and is a Director of L Project.Mr.Ohshima received SID Outstanding Contributed Paper Awards in1984 and1985,and SID Special Recognition Award in1995.。

TFT-LCD显示技术

详细描述
TFT-LCD显示屏的响应速度取决于液晶分子的运动速度。为了提高响应速度，可以采用新型液晶材料、优化驱动电路等方式。此外，采用动态背光调节技术也可以在一定程度上改善响应速度问题。
色彩表现力不足
总结词
相对于OLED等其他显示技术，TFT-LCD显示技术在色彩表现力方面存在不足。
详细描述
视角限制
总结词
TFT-LCD显示技术的视角限制是其固有缺点之一。
VS
详细描述
由于TFT-LCD显示屏的视角限制，从不同角度观看时，色彩和亮度可能会发生变化，影响观看效果。为了解决这个问题，可以采用广视角膜或者广视角技术，如IPS 、VA等，以扩大可视角度。
响应速度慢Байду номын сангаас
总结词
TFT-LCD显示技术的响应速度慢可能会影响动态图像的显示效果。
厚度薄、体积小
厚度薄、体积小
轻便易携带
TFT-LCD显示器采用了薄型化和集成化的设计，使得显示器在厚度和体积上都相对较小。这种设计使得TFT-LCD显示器在空间受限的环境中具有优势，如移动设备、便携式电脑等。
由于TFT-LCD显示器体积小、重量轻，用户可以轻松地将它携带到不同的地方。这种便携性使得TFT-LCD显示器在移动办公、远程会议等场景中具有广泛的应用价值。
功耗低
功耗低
TFT-LCD显示器采用了高效的背光调节技术，能够在不同亮度下保持较低的功耗。此外，TFT-LCD显示器还具有智能电源管理系统，可以根据实际需要自动调节背光亮度，进一步降低功耗。
节能环保
低功耗的特性使得TFT-LCD显示器在节能环保方面具有优势。用户在使用这种显示器时可以节省能源，减少对环境的负担。这种环保特性使得TFT-LCD显示器受到了许多用户

应用于低温多晶硅薄膜晶体管液晶显示器之新型互补电流镜式模拟缓冲放大器

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ＷＡＮＧｎ — ｓｎ，Ｎｉ — ｎ，ＦａｇＨｉｇＬＩＣｈｈＹｉｇＣＨＡＮＧｕｇＰｅｇ。ＵＨａ — ｅＨｎ — ｎＬＩｎＷｎ
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维普资讯
第３卷１
第１期

TFT-LCD技术简介

TFT-LCD技术1 TFT LCD技术发展历史晶体管的发明对半导体行业来说，是个划时代的事件。

作为晶体管的一种，TFT的发明是在与LCD没有任何联系的情况下发生的。

1971年，虽然有人提出用TFT驱动LCD的概念，但是并没有引起人们的注意。

直到1979年，开发出了TFT LCD，但是当时由于用无源矩阵的方法也可以驱动100条左右的扫描线，因此还是很多人对TFT LCD没有看好。

在LCD画面的数十万个画素上都作TFT，在当时的半导体技术水平来看，简直是“痴人做梦”。

进入80年代以后，在TN模式LCD上很难实现显示更多信息量的要求，因此很多人（LCD技术人员，而不是半导体技术人员）在液晶材料和液晶模式上想找出答案。

1983年左右，人们终于找到了答案—新的液晶模式STN LCD。

由于STN模式非常巧妙的解决了TN模式在100条扫描线以上出现画质急剧下降的问题，整个LCD业界几乎都投入到STN技术开发和产品开发。

80年大后期，市场上大量出现了STN产品，还出现了类似于笔记本电脑的文字处理器（Word Processor）。

但是对于彩色化、液晶电视等新的需求，STN模式显然力不从心（响应速度慢，灰度表示较困难）。

很多技术人员开始转向新的解决方法。

虽然TFT LCD的技术开发没有停止过，但是整个LCD业界开始把目光转向TFT LCD还是上个世纪80年代中期以后的事。

上个世纪80年代正好是日本半导体行业的全盛期，而且比较有趣的是几乎所有的拥有半导体部门的日本企业都参与了TFT LCD产业。

因为TFT的工艺与DRAM 有很大的类似性，因此虽然没有LCD的技术储备，日本很多半导体企业还是参与了这个行业。

其实韩国的三星电子、LG飞利浦、现代都拥有或拥有过半导体部门；台湾的TFT LCD企业（友达）也与半导体有关系。

下面的两个表各自描述TFT的技术发展史和LCD的技术发展史。

在1971年TFT技术和LCD技术曾经有过交点，但是没有“成功”的结合；到了1981年开始这两个技术才真正结合并开始发芽开花了。

ltps低温多晶硅技术的原理解析

ltps低温多晶硅技术的原理解析一、LTPS 简介低温多晶硅（Low Temperature Poly-silicon；LTPS，以下以LTPS 代称）是平板显示器领域中的又一新技术。

继非晶硅（Amorphous-Silicon，以下以a-Si 代称）之后的下一代技术。

Polysilicon （多晶硅）是一种约为0.1 至数个um 大小、以硅为基底的材料，由许多硅粒子组合而成。

在半导体制造产业中，多晶硅通常经由LPCVD（Low Pressure Chemical Vapor DeposiTIon）处理后，再以高于900C 的退火程序，此方法即为SPC （Solid Phase CrystallizaTIon）。

然而此种方法却不适合用于平面显示器制造产业，因为玻璃的最高承受溫度只有650℃。

因此，LTPS 技术即是特別应用在平面显示器的制造上。

传统的非晶硅材料（a-Si）的电子迁移率只有0.5 cm2/V.S，而低温多晶硅材料（LTPS）的电子迁移率可达50～200 cm2/V.S，因此与传统的非晶硅薄膜电晶体液晶显示器（a-Si TFT-LCD）相比，低溫多晶硅TFT-LCD具有更高解析度、反应速度快、亮度高（开口率apertureraTIo高）等优点，同时可以将周边驱动电路同时制作在玻璃基板上，达到在玻璃上集成系统（SOG）的目标，所以能够节省空间和成本此外，LTPS技术又是发展主动式有机电致发光（AM-OLED）的技术平台，因此LTPS技术的发展受到了广泛的重视。

二、a-Si 与LTPS的原理和工艺结构剖析低温多晶硅技术LTPS（Low Temperature Poly-silicon）最初是日本北美的技术企业为了降低Note-PC显示屏的能耗，令Note-PC显得更薄更轻而研发的技术，大约在九十年代中期这项技术开始走向试用阶段。

由LTPS衍生的新一代有机发光液晶面板OLED也于1998年正式走上实用阶段，它的最大优势在于超薄、重量轻、低耗电，可以提供更艳丽的色彩和更清晰的影像。

液晶屏种类优缺点

2.TFT LCD
TFT（Thin Film Transistor薄膜晶体管）是有源矩阵型液晶显示屏幕(AM-LCD)中的一种，TFT－LCD屏幕在基板的背部设置特殊光源，可以“主动的”对屏幕上的各个独立的象素进行控制，这也就是所谓主动矩阵TFT（active matrix TFT）的来历，这样可以大大的提高显示响应时间，一般TFT的反映时间比较快，小于80ms。而且由于TFT是主动式矩阵LCD，可让液晶的排列方式具有记忆性，不会在电流消失后马上恢复原状。TFT还改善了STN－LCD模糊闪烁（水波纹）的现象，有效的提高了播放动态画面的能力。和STN相比TFT有出色的色彩饱和度、色彩还原能力和更高的对比度。缺点是比较耗电，生产成本比较高。TFT LCD液晶屏幕是目前最为主流的液晶显示类型，不仅在MP3、MP4产品上大量应用，在桌面液晶显示器、笔记本电脑、电视、手机等产品上更为普遍，相信大家一定不陌生。
5.SLCD
手机所采用的SLCD，并不是平时我们购买电视时所认知的那块索尼与三星合伙生产的Super LCD，而是台湾面板厂商所开发的Splice LCD，也就是拼接专用液晶屏，这款屏幕采用的仍是CCFL背光模式，色彩保护度则更加出色，可达到97%，同时其他的一些参数都要比TFT来得高。可视角度也达到了178度。
6.IPS
IPS可以说是是日韩两家大打出手的典型例子，LG所生产的Retina屏相信所为人所熟知，顾名思义就是超越视网膜可以分辨的精细屏幕，但事实上Retina只是显示技术，IPS屏幕本身是LCD的一种分支，IPS型的施加电场方式是水平的，因此液晶分子是平行于基板进行扭转运动，未施加电场的液晶分子是平行基板配向(homogeneous)，上下二片偏光板是90度交叉配置，永远保持垂直。底层偏光板的偏光轴与液晶分子的配像是相同，入射光经由平行配列的液晶层，直线前进不改变行进方向，射出光无法通过上层偏光板，所以呈现不透光的黑色状态，施加电场后，液晶分子会扭转，在液晶层产生双折射率，这会改变入射光行进的方向，通过上层偏光板，呈现透光状态。液晶分子平交于基板作扭转运动，未施加电场，液晶分子配列在小预倾角时，黑色状态的视角是增大了，导致明暗比的视角也变广。

LTPS TFT 面板的技术优势

LTPS低温多晶硅技术及其优势简介发布时间：2013-8-15一、LTPS 简介低温多晶硅（Low Temperature Poly-silicon；LTPS，以下以LTPS 代称）是平板显示器领域中的又一新技术。

继非晶硅（Amorphous-Silicon，以下以a-Si 代称）之后的下一代技术。

Polysilicon (多晶硅) 是一种约为0.1 至数个um 大小、以硅为基底的材料，由许多硅粒子组合而成。

在半导体制造产业中，多晶硅通常经由LPCVD(Low Pressure Chemical Vapor Deposition) 处理后，再以高于900C 的退火程序，此方法即为SPC (Solid Phase Crystallization) 。

然而此种方法却不适合用于平面显示器制造产业，因为玻璃的最高承受温度只有650℃。

因此，LTPS 技术即是特别应用在平面显示器的制造上。

传统的非晶硅材料（a-Si）的电子迁移率只有0.5 cm2/V.S，而低温多晶硅材料（LTPS）的电子迁移率可达50～200 cm2/V.S，因此与传统的非晶硅薄膜电晶体液晶显示器（a-Si TFT-LCD）相比，低温多晶硅TFT-LCD具有更高解析度、反应速度快、亮度高(开口率apertureratio高)等优点，同时可以将周边驱动电路同时制作在玻璃基板上，达到在玻璃上集成系统（SOG）的目标，所以能够节省空间和成本此外，LTPS技术又是发展主动式有机电致发光（AM-OLED）的技术平台，因此LTPS技术的发展受到了广泛的重视。

二、非晶硅（a-Si）与低温多晶硅（LTPS）的区别一般情况下低温多晶硅的制程温度应低于摄氏 600℃，尤其对LTPS区别于a-Si制造的制造程序“激光退火”（laser anneal）要求更是如此。

与a-Si相比，LTPS的电子移动速度要比a-Si快100 倍，这个特点可以解释两个问题：首先，每个LTPS PANEL 都比a-Si PANEL反应速度快；其次，LTPS PANEL 外观尺寸都比a-Si PANEL小。

2023年TFT-LCD行业市场分析现状

2023年TFT-LCD行业市场分析现状TFT-LCD（薄膜晶体管液晶显示屏）是一种高清晰度、高对比度、高亮度的液晶显示技术,在电子产品中广泛应用。

目前，TFT-LCD行业市场发展迅速，市场规模不断扩大。

本文将从市场规模、技术创新、竞争格局和发展趋势几个方面进行分析。

首先，TFT-LCD行业市场规模呈现快速增长的趋势。

随着手机、平板电脑、电视等电子产品的普及，对高品质液晶显示屏的需求不断增加。

据统计，2019年全球TFT-LCD市场规模已经达到了961亿美元。

未来几年，随着新兴应用如VR/AR、智能家居的兴起，TFT-LCD市场规模有望进一步扩大。

其次，技术创新是推动TFT-LCD行业发展的重要驱动力。

高分辨率、高亮度、高色准等成为TFT-LCD技术研发的重点。

近年来，不少企业在技术创新方面取得了突破性进展。

例如，柔性显示技术的应用使得手机等便携设备更加柔性和轻薄。

同时，OLED（有机发光二极管）技术的发展也对TFT-LCD行业带来了一定冲击，但目前TFT-LCD仍然是主流技术。

第三，TFT-LCD行业竞争激烈，市场格局较为集中。

目前，全球TFT-LCD市场的竞争主要由韩国和中国大陆的企业主导。

三星、LG等韩国企业在技术研发和产能方面占据一定优势。

而中国大陆的企业，如京东方、群创等在低价和大规模生产方面有一定优势。

同时，日本、台湾等地的企业也在TFT-LCD行业有一定份额。

竞争压力使得企业在产品质量、价格和服务上进行了不断提升。

最后，未来TFT-LCD行业发展呈现出一些趋势。

首先，高分辨率、高色准的需求将继续推动技术创新。

其次，柔性显示技术有望得到更广泛应用，推动电子产品的创新。

此外，TFT-LCD行业有望向更专业化、精细化的方向发展，满足不同行业的个性化需求。

同时，环保和节能问题也是TFT-LCD行业发展的重要考虑因素，企业需要加强环保意识，推动绿色发展。

综上所述，TFT-LCD行业市场规模扩大，技术不断创新，竞争格局激烈，发展趋势明显。

第五代低温多晶硅薄膜晶体管液晶显示器件LTPSTFTLCD

第五代低温多晶硅薄膜晶体管液晶显示器件(L TPS TFT-LCD)项目环境影响报告书（简本）评价单位：深圳市环境科学研究院二O一一年十月·深圳目录第一章总论 (3)1.1任务来源 (3)1.2区域环境功能属性 (4)1.3评价标准 (4)1.4评价等级 (8)1.5评价工作范围 (9)1.6环境敏感点及环境保护目标 (9)第二章现有工程回顾性影响评价 (12)2.1现有工程的基本情况 (12)2.2现有工程建设内容 (13)2.3现有工程污染物排放及治理措施回顾性评价 (16)第三章技改项目工程概况、工程分析 (22)3.1技改项目基本情况 (22)3.2技改项目建设内容 (22)3.3工程分析 (24)3.4“三本帐”核算 (38)第四章环境现状调查与评价 (39)4.1环境空气质量现状 (39)4.2水环境质量现状 (39)4.3声环境现状 (39)4.4评价区域的环境问题 (39)第五章环境影响预测与评价 (40)5.1水环境影响评价结论 (40)5.2大气环境影响评价结论 (40)5.3声环境影响评价结论 (40)5.4固（液）体废物环境影响评价结论 (40)5.5环境风险评价结论 (41)第六章污染防治措施 (42)6.1废水治理措施 (42)6.2废气处理措施 (45)6.3噪声治理措施可行性分析 (50)6.4固体废物治理措施可行性分析 (50)6.5地下水污染防治措施 (51)6.6项目二期工程达产后进行技改的环保措施要求 (51)第七章项目与规划符合性分析 (52)第八章结论 (53)第一章总论1.1任务来源平板显示（FPD）技术是信息社会的支柱产业之一，具有十分广阔的发展前景。

近年来新型显示器件特别是以薄膜晶体管液晶显示器（TFT-LCD）为代表的各种新型平板显示器件，随着生产技术的不断提高已进入到加速发展的时期，二十一世纪将是新型平板显示技术快速发展与应用的新时代。

低温多晶硅技术(LTPS)在液晶显示中的应用郑彬

低温多晶硅技术（LTPS）在液晶显示中的应用河南信息工程学校郑彬摘要本文介绍了薄膜晶体管（TFT）与TFT液晶显示屏的结构，低温多晶硅技术（LTPS）的特点以及其在液晶显示中应用的优势。

关键词薄膜晶体管低温多晶硅开口率集成窄框化1897年，阴极射线管（CRT）问世，迅速成为显示器的主流技术，广泛应用于电视、电脑显示器等领域。

随着科技的进步，人们对作为人机界面的显示器要求越来越高，尤其是移动互联时代的到来，CRT显示器体积大、笨重等特点显得不合时宜，于是平板显示便应运而生了。

平板显示是指显示屏对角线的长度与整机厚度之比大于4﹕1的显示器件，主要包括液晶（LCD）、等离子体（PDP）、电致发光（ELD）、发光二极管（LED）等。

由于其具有清晰度高、图像色彩好、环保、省电、轻薄、便于携带等优点，自20世纪90年代开始迅速发展，并逐渐走向成熟。

其中，液晶显示是目前技术最成熟、应用最为广泛的平板显示技术。

液晶显示技术可分为扭曲向列型（TN-LCD）、超扭曲向列型（STN-LCD）和薄膜晶体管型（TFT-LCD）。

薄膜晶体管液晶显示器由于每个像素都可以实现独立驱动，更适合视频活动图像的显示，实现高画质、真彩色。

因此，TFT-LCD广泛应用于液晶电视、电脑显示器、平板电脑和手机显示屏等领域。

一、TFT液晶显示屏的结构与特点1.TFT液晶显示屏的结构TFT液晶显示屏结构如图1所示，两块玻璃衬底分别是下基板和上基板。

在下基板上制备有作为像素开关的TFT器件、透明像素电极、存储电容、控制TFT栅极的栅线(行)、控制TFT源端的信号线(列)等；在上基板上制备有RGB三色的彩色滤色膜和遮光用的黑矩阵，并在其上制备透明的公共电极。

两片玻璃之间灌注液晶材料，并通过封框胶黏接，同时起到密封的作用。

在上下两片玻璃基板的外侧分别贴有偏振片，其只允许沿某一特定方向振动的光波通过，而其他方向振动的光将被全部或部分地阻挡，这样自然光通过偏振片以后，便形成了偏振光。

2015上半年LTPS_TFT_LCD玻璃基板投入量增长迅猛

根据IHS研究显示，低温多晶硅薄膜晶体管液晶显示器（LTPS TFT LCD）在智能手机中的占比逐年增长。

2014年一季度，有源矩阵 (Active Matrix)中小型显示面板总出货量为5亿5,660万片，其中LTPS TFT LCD占18.8%，达1亿470万片。

2015年一季度，有源矩阵中小型显示面板总出货量为5亿8,200万片，LTPS占比22%，达1亿2,920万片。

这表明LTPS TFT LCD在智能手机市场中占据的份额越来越重。

LTPS技术最大的优势是多晶硅结构带来的高电子迁移率使得面板分辨率高，耗电量低。

不过LTPS目前面临最大的挑战是过剩和复杂的掩膜工艺，使得良率较低且不稳定。

为了发挥LTPS的优势，同时为了与非晶硅（a-Si）TFT LCD技术竞争，从2015年一季度开始，LTPS的玻璃基板投入量增长迅速。

而且，随着LTPS TFT LCD新工厂在2016和2017年投入生产，尤其是在中国和日本，IHS预测LTPS终将威胁到a-Si TFT LCD技术目前在中小尺寸应用中的统治地位，甚至也将对AMOLED产生威胁。

几家使用a-Si技术和专注于中小尺寸面板市场的面板厂商的生存恐将受到威胁，如中华映管（CPT）、瀚宇彩晶（HannStar）和龙腾光电（IVO）。

下图显示的是2014年一季度到2015年二季度全球主要面板厂商LTPS TFT LCD玻璃基板投入状况。

需要注意的是：这张图表不包括Samsung Display的LTPS投入量，因为Samsung Display主要将其LTPS TFT用于AMOLED背板。

2015年一季度，全球LTPS TFT LCD玻璃基板投入量达1,407Km2，比2014年一季度的1,012Km2增长39%Y/Y。

2015年二季度，全球LTPS TFT LCD玻璃基板投入量达1,421Km2，比2014年二季度的1,118Km2增长27%Y/Y。

低温多晶矽TFT-LCD介绍

低温多晶矽TFT-LCD介绍
可靠
一、什么是LTPSTFT-LCD
低温多晶矽(LTPS)TFT-LCD是由现代尖端技术开发而成的一种新型的
液晶显示器(LCD)，采用的是低温多晶硅(LTPS)技术，它具有高分辨率、
高灵敏度、快速响应时间和耐久性的特点，比普通液晶材料具有更好的性能。

它可以实现更高的亮度、灵敏度、动态范围和更高的抗反射效果。

二、LTPSTFT-LCD的结构原理
低温多晶矽(LTPS)TFT-LCD的结构由四层构成，分别是氧化层、多晶
硅晶格层、TFT层和像素层。

其中，氧化层是TFT-LCD屏的基础，它可以
把几百块硅晶体和其它电子元器件连在一起，而TFT层可以确保每个像素
变得足够灵敏，以便更好地显示图像。

此外，多晶结构可以确保硅晶体的
尺寸和厚度足够小，以便确保具有更逼真的画面和更高分辨率的画面效果。

三、LTPSTFT-LCD的特点
1、低温多晶矽(LTPS)TFT-LCD的显示分辨率非常高，它一般比普通
液晶材料的分辨率高出3-5倍，并且具有较高的响应速度，可以达到1ms
以下。

2、具有更高的亮度、灵敏度、动态范围和更高的抗反射效果。

由于LTPS技术的使用，LTPSTFT-LCD具有更强的耐热性，可以抵抗比普通液晶
材料的耐热性更高的热能冲击，以及长时间的高温环境。

屏幕材质Ltpslcd的技术指标

屏幕材质Ltpslcd的技术指标LTPS是TFT(薄膜晶体管)技术的一种，中文名称为低温多晶硅TFT，LTSP-TFT可以用于驱动LCD(液晶)屏幕和OLED(有机发光二极管)屏幕，LTPS-TFT驱动的屏幕具有响应速度快，分辨率高，功耗低等优点，现在高端手机屏幕、Pad屏幕、笔记本屏幕等都是采用LTPS-TFT驱动的基板，因此LTPS面板的价格比较高一些。

LCD和OLED属于不同的两种显示技术类型，LCD是Liquid Crystal Display的简称，LCD是通过电场控制液晶分子对背光源的调节来实现显示的。

而OLED是Organic Ligh tEmitting Diode的简称，OLED是通过电流驱动直接实现现实的。

LCD和OLED都可以分为被动式PM（Passive Matrix）显示和主动式AM（Active Matrix）显示，PM和AM的区别在于是否是由TFT驱动，AM显示是由TFT驱动显示的，PM显示仅用于照明、电子标牌、手环、计算器等。

了解以上内容后，我可以回答题主的问题了。

LTPS、LCD都属于LCD显示，AMOLED和OLED都属于OLED显示，现在高端手机使用的屏幕无外乎LTPS-LCD和AMOLED，各家对外宣称的名字不一样，三星宣称Super AMOLED，早年苹果推出Iphone时宣称Retina屏幕，其实就是LTPS-LCD屏幕。

lcd和oled是两种面板。

简单的区别lcd有一整块背光板，oled是每个像素单独发光，本质和那种商店啊，或者开会打字幕用的led屏差不多。

lcd优点寿命长，成本低，基本没有低频pwm频闪的危害，但是蓝光普遍偏高oled由于是像素单独发光，导致各个像素之间的使用时间不同，寿命较短，容易烧屏，尿屏等。

优点是轻薄，对比度高，显示效果好，可以折叠等等。

ltps是lcd中的一种技术，响应时间和显示效果有提升amoled属于oled，最早日本的厂商都把这种屏幕面板叫做oled，后来三星有突破技术，为了标榜自己与众不同就叫amoled。

显示器件的低温多晶硅技术考核试卷

8. SiN
9. TFT图案化
10.迁移率和稳定性
四、判断题
1. ×
2. √
3. √
4. ×
5. √
6. √
7. ×
8. ×
9. ×
10. √
五、主观题（参考）
1.优势：高分辨率、高迁移率、低功耗、薄型化。实例：智能手机、平板电脑、高清电视。
2. LTPS-TFT：更小的晶体缺陷、更高的迁移率、更好的开关特性。适合高分辨率因为可以实现更小的TFT尺寸。
A.成本控制
B.工艺复杂性
C.设备要求高
D.生产效率低
13.以下哪些因素会影响LTPS-TFT的开关速度？()
A.迁移率
B.沟道长度
C.沟道宽度
D.绝缘层材料
14. LTPS显示器件的制造过程中，以下哪些步骤与光刻有关？()
A. TFT图案化
B.透明电极图案化
C.彩色滤光片图案化
D.像素图ห้องสมุดไป่ตู้化
15.以下哪些条件会影响LTPS薄膜的生长质量？()
A.硅(Si)
B.氧化硅(SiO2)
C.碳(C)
D.氮(N)
2.低温多晶硅的熔点相较于单晶硅有何特点？()
A.更高
B.更低
C.相同
D.无法确定
3.低温多晶硅的主要应用领域是？()
A.电脑CPU
B.显示器件
C.太阳能电池板
D.电阻器
4.下列哪个不是LTPS（低温多晶硅技术）显示器件的优点？()
A.高分辨率
2.描述LTPS-TFT与a-Si TFT在结构和性能上的主要差异，并解释为什么LTPS-TFT通常被认为更适合用于高分辨率显示器件。
3.解释激光退火在LTPS技术中的作用，以及它如何影响多晶硅薄膜的晶体质量和TFT的性能。