2SJ516中文资料
2SC1055H 瓦斯半导体 NPN 功率二极管 数据表说明书
N/A Fuji-SVEA
2SC1056
N/A
2SC1056
N/A
2SC1056
N/A
2SC1056
N/A
2SC1056 2SC1056 2SC1057
N/A Sony Semiconductor N/A
2SC1057
Fuji-SVEA
2SC1057
N/A
2SC1057
N/A
2SC1057
N/A
2SC1057
/2SC1055H-datasheet.html
Shortform Transistor Datasheet Guide
/2SC1055H-datasheet.html
Si NPN Power BJT
N/A
2SC1057
ห้องสมุดไป่ตู้
N/A
2SC1058
N/A
DESCRIPTION
URL
Transistor Shortform Datasheet & Cross References
/2SC1055H-datasheet.html
Shortform Data and Cross References (Misc Datasheets)
/2SC1060B-datasheet.html
Si NPN Power BJT
/2SC1060C-datasheet.html
Basic Transistor and Cross Reference Specification
/2SC1055H-datasheet.html
Basic Transistor and Cross Reference Specification
2SC5200RTU;FJL4315OTU;2SC5200OTU;中文规格书,Datasheet资料
2SC5200/FJL4315 — NPN Epitaxial Silicon TransistorJanuary 20092SC5200/FJL4315NPN Epitaxial Silicon TransistorApplications•High-Fidelity Audio Output Amplifier •General Purpose Power AmplifierFeatures•High Current Capability: I C = 17A.•High Power Dissipation : 150watts.•High Frequency : 30MHz.•High Voltage : V CEO =250V•Wide S.O.A for reliable operation.•Excellent Gain Linearity for low THD.•Complement to 2SA1943/FJL4215.•Thermal and electrical Spice models are available.•Same transistor is also available in:-- TO3P package, 2SC5242/FJA4313 : 130 watts -- TO220 package, FJP5200 : 80 watts -- TO220F package, FJPF5200 : 50 wattsAbsolute Maximum Ratings* T a= 25°C unless otherwise noted* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.Thermal Characteristics* T a=25°C unless otherwise noted* Device mounted on minimum pad sizeh FE ClassificationSymbolParameter RatingsUnitsBV CBO Collector-Base Voltage 250V BV CEO Collector-Emitter Voltage 250V BV EBO Emitter-Base Voltage 5V I C Collector Current(DC)17A I B Base Current1.5A P D Total Device Dissipation(T C =25°C)Derate above 25°C1501.04W W/°C T J , T STGJunction and Storage Temperature- 50 ~ +150°CSymbolParameterMax.UnitsR θJCThermal Resistance, Junction to Case0.83°C/WClassificationROh FE155 ~ 11080 ~ 1601.Base2.Collector3.Emitter1TO-2642SC5200/FJL4315 — NPN Epitaxial Silicon TransistorElectrical Characteristics* T a=25°C unless otherwise noted* Pulse Test: Pulse Width=20µs, Duty Cycle ≤2%Ordering InformationSymbolParameterTest ConditionMin.Typ.Max.UnitsBV CBO Collector-Base Breakdown Voltage I C =5mA, I E =0250V BV CEO Collector-Emitter Breakdown Voltage I C =10mA, R BE =∞250V BV EBO Emitter-Base Breakdown Voltage I E =5mA, I C =05VI CBO Collector Cut-off Current V CB =230V, I E =0 5.0µA I EBO Emitter Cut-off Current V EB =5V, I C =0 5.0µAh FE1DC Current Gain V CE =5V, I C =1A 55160h FE2DC Current GainV CE =5V, I C =7A 3560V CE (sat)Collector-Emitter Saturation Voltage I C =8A, I B =0.8A 0.4 3.0V V BE (on)Base-Emitter On Voltage V CE =5V, I C =7A 1.0 1.5V f T Current Gain Bandwidth Product V CE =5V, I C =1A 30MHz C obOutput CapacitanceV CB =10V, f=1MHz200pFPart NumberMarkingPackagePacking MethodRemarks2SC5200RTU C5200R TO-264TUBE hFE1 R grade 2SC5200OTU C5200O TO-264TUBE hFE1 O grade FJL4315RTU J4315R TO-264TUBE hFE1 R grade FJL4315OTUJ4315OTO-264TUBEhFE1 O grade2SC5200/FJL4315 — NPN Epitaxial Silicon Transistor2SC5200/FJL4315 NPN Epitaxial Silicon Transistor2SC5200/FJL4315分销商库存信息:FAIRCHILD2SC5200RTU FJL4315OTU2SC5200OTU。
2SJ602中文资料
–2
–3
–4
–5
VGS - Gate to Source Voltage - V
ID - Drain Current - A
2SJ602
–60 –50 –40 –30 –20 –10
00
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE
VGS = –10 V
–4.5 V –4.0 V
(TO-220AB)
V
V
A
A
W
W
(TO-262)
°C
°C
A
mJ
Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1% 2. Starting Tch = 25°C, VDD = −30 V, RG = 25 Ω, VGS = −20 → 0 V
(TO-263, TO-220SMD)
Input Capacitance
Ciss
VDS = −10 V
Output Capacitance
Coss
VGS = 0 V
Reverse Transfer Capacitance
Crss
f = 1 MHz
Turn-on Delay Time
td(on)
VDD = −30 V, ID = −10 A
Ciss, Coss, Crss - Capacitance - pF
DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE
160 Pulsed
120
VGS = –4.0 V
–4.5 V
–10 V
80
40
2SB695中文资料
元器件交易网
SavantIC Semiconductor Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=-30mA ;IB=0 IC=-1mA ;IE=0 IE=-1mA ;IC=0 IC=-5A; IB=-0.5A IC=-1A;VCE=-5V VCB=-170V; IE=0 VEB=-5V; IC=0 IC=-1A ; VCE=-5V IC=-5A ; VCE=-5V IC=-1A ; VCE=-5V 40 20 7 MIN -120 -170 -5
2SB695
SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBE ICBO IEBO hFE-1 hFE-2 fT
TYP.
MAX
UNIT V V V
-1.5 -1.5 -50 -50 200
V V µA µA
MHz
2ቤተ መጻሕፍቲ ባይዱ
2SJ511中文资料
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L 2−π−MOSV)2SJ511Chopper Regulator, DC −DC Converter and Motor Drive Applicationsz 4-V gate drivez Low drain −source ON resistance : R DS (ON) = 0.32 Ω (typ.) z High forward transfer admittance: |Y fs | = 1.4 S (typ.)z Low leakage current : I DSS = −100 μA (max) (V DS = −30 V)z Enhancement mode : V th = −0.8~−2.0 V (V DS = −10 V, I D = −1 mA)Absolute Maximum Ratings (Ta = 25°C)Characteristics Symbol Rating UnitDrain −source voltageV DSS−30 V Drain −gate voltage (R GS = 20 k Ω) V DGR −30VGate −source voltage V GSS ±20 V DC (Note 1) I D −2 A Drain currentPulse (Note 1)I DP−6 ADrain power dissipation P D 0.5 W Drain power dissipation(Note 2)P D 1.5 WSingle pulse avalanche energy(Note 3) E AS 55mJ Avalanche currentI AR−2 A Repetitive avalanche energy (Note 4) E AR 0.05 mJ Channel temperature T ch 150 °C Storage temperature rangeT stg−55~150 °CNote: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change intemperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).Thermal CharacteristicsCharacteristics Symbol Max UnitThermal resistance, channel toambientR th (ch −a) 250°C / WNote 1: Ensure that the channel temperature does not exceed 150°C. Note 2: Mounted on a ceramic substrate (25.4 mm × 25.4 mm × 0.8 mm) Note 3: V DD = −25 V, T ch = 25°C (initial), L = 10 mH, R G = 25 Ω, I AR = −2 A Note 4: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Please handle with caution.Unit: mmJEDEC ― JEITA―TOSHIBA 2−5K1B Weight: 0.05 g (typ.)MarkingElectrical Characteristics (Ta = 25°C)Characteristics SymbolTest ConditionMin Typ. Max Unit Gate leakage current I GSS V GS = ±16 V, V DS = 0 V — — ±10μA Drain cut −off current I DSS V DS = −30 V, V GS = 0 V ——−100μADrain −source breakdown voltageV (BR) DSSI D = −10 mA, V GS = 0 V −30 — — V Gate threshold voltage V th V DS = −10 V, I D = −1 mA −0.8 — −2.0V V GS = −4 V, I D = −1 A — 0.55 0.76Drain −source ON resistance R DS (ON)V GS = −10 V, ID = −1 A— 0.32 0.45Ω Forward transfer admittance |Y fs | V DS = −10 V, I D = −1 A0.71.4—SInput capacitanceC iss — 160 —Reverse transfer capacitance C rss — 30 — Output capacitanceC ossV DS = −10 V, V GS = 0 V, f = 1 MHz — 85 —pF Rise timet r — 30 —Turn −on timet on — 45 —Fall timet f — 30 — Switching timeTurn −off timet off — 120 — nsTotal gate charge (Gate −source plus gate −drain) Q g— 5.5 — Gate −source charge Q gs — 4.3 — Gate −drain (“miller”) chargeQ gdV DD ≈ −24 V, V GS = −10 V, I D = −2 A— 1.2 —nCSource −Drain Ratings and Characteristics (Ta = 25°C)Characteristics SymbolTest ConditionMin Typ. Max Unit Continuous drain reverse current(Note 1) I DR (Note 1)— — — −2 A Pulse drain reverse current(Note 1) I DRP (Note 1)—— — −6 A Forward voltage (diode) V DSFI DR = −2 A, V GS = 0 V ——1.5VReverse recovery time t rr — 40 — ns Reverse recovery chargeQ rrI DR= −2 A, V GS= 0 V dI DR / dt = 50 A / μs— 18 — nClead (Pb)-free finish.RESTRICTIONS ON PRODUCT USE20070701-EN •The information contained herein is subject to change without notice.•TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property.In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.• The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk.•The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations.• The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties.• Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.。
2S系列晶体管资料速查
2SC2166三菱μA)001002SC2640东芝0022SC2941日电μA)000.52SC3147东芝10002SC3629三菱μA)002002SC4013罗姆μA)000.52SC4253东芝μA)000.12SC4526三菱0032SC4856三洋μA)0012SC5006日电μA)0012SC941TM东芝μA)000.1Vebo(V)00Vce=10V, Ic=ft(MHz)Vebo(V)00Vce=10V, Ic=ft(MHz) Veb=4V, Ic=0Vcb=25V, Ie=Vebo(V)00.5Veb=3V, Ic=0hfeVeb=10V, Ie=Vebo(V)0300Vce=5V, Ic=1hfe比*Vebo(V)80200Vce=10V, Ic=hfe比* Veb=2V, Ic=0ft(MHz) Vcb=-10V, Ie Vebo(V)0500Vce=-10V, Ic=Vcb=20V Vebo(V)0180Vce=6V, Ic=1ft(MHz) Vcb=20V Vebo(V)0180Vce=6V, Ic=1ft(MHz) Vce=10V, Ic=Vebo(V)5500Vce=10V, Ic=Cre(pF) Vce=10V, Ic=Vebo(V)5500Vce=10V, Ic=Cre(pF) Vcb=-12V Vebo(V)250560Vce=-2V, Ic=ft(MHz) Vce=10V, Ic=Vebo(V)10Vce=10V, Ic=Cob(pF) Vce=10V, Ic=Vebo(V) 1.10Vce=10V, Ic=Cob(pF) Vce=6V, Ic=1Vebo(V)5500Vce=6V, Ic=1Cre(pF) Veb=2V, Ic=0Vebo(V)0300Vce=5V, Ic=1hfe比*Vebo(V)0300Vce=5V, Ic=1hfe比* Veb=2V, Ic=0Veb=2V, Ic=0Vebo(V)80200Vce=10V, Ic=hfe比*Vebo(V)80200Vce=10V, Ic=hfe比* Veb=2V, Ic=0Vcb=30V, Ie=Vebo(V)0100Veb=4V, Ic=0hfeVcb=25V, Ie=Vebo(V)01Veb=3V, Ic=0hfeVcb=25V, Ie=Vebo(V)01Veb=3V, Ic=0hfehfeVcb=25V, Ie=Vebo(V)0500Veb=3V, Ic=0Vcb=25V, Ie=Vebo(V)0500Veb=3V, Ic=0hfeVcb=25V, Ie=Vebo(V)0500Veb=3V, Ic=0hfehfeVcb=15V, Ie=Vebo(V)0100Veb=2.5V, Ic=Vcb=15V, Ie=Vebo(V)0200Veb=2V, Ic=0hfeVcb=15V, Ie=Vebo(V)0400Veb=2V, Ic=0hfeVcb=15V, Ie=Vebo(V)0400Veb=2V, Ic=0hfehfeVcb=30V, Ie=Vebo(V)0100Veb=4V, Ic=0Vcb=25V, Ie=Vebo(V)0100Veb=3V, Ic=0hfeVcb=25V, Ie=Vebo(V)0500Veb=3V, Ic=0hfeVcb=25V, Ie=Vebo(V)0500Veb=3V, Ic=0hfeVce=10V, Ic=Vebo(V) 2.20Vce=10V, Ic=Cob(pF) Vcb=15V, Ie=Vebo(V)020Veb=3V, Ic=0hfehfeVcb=10V, Ie=Vebo(V)030Veb=3V, Ic=0Vcb=10V, Ie=Vebo(V)0100Veb=3V, Ic=0hfeVcb=24V Vebo(V)0270Vce=6V, Ic=1ft(MHz) Vcb=24V Vebo(V)0270Vce=6V, Ic=1ft(MHz) Vcb=20V Vebo(V)0180Vce=6V, Ic=1ft(MHz) Vcb=24V Vebo(V)0270Vce=6V, Ic=1ft(MHz) Vcb=24V Vebo(V)0270Vce=6V, Ic=1ft(MHz) Vcb=40V, Ie=Vebo(V)0200Vce=5V, Ic=0ft(MHz) Vcb=35V, Ie=Vebo(V)0100Veb=3V, Ic=0hfeVcb=25V, Ie=Vebo(V)50180Vce=10V, Ic=IMD(dB)hfeVcb=25V, Ie=Vebo(V)04Veb=2V, Ic=0Vce=5V, Ic=5Vebo(V)1000Vce=5V, Ic=0Cob(pF)hfeVcb=25V, Ie=Vebo(V)0100Veb=3V, Ic=0hfeVcb=35V, Ie=Vebo(V)01Veb=3V, Ic=0Vcb=35V, Ie=Vebo(V)02Veb=3V, Ic=0hfeVce=10V, Ic=Vebo(V)30Vce=10V, Ic=Cob(pF) Vce=10V, Ic=Vebo(V)50Vce=10V, Ic=Cob(pF) Vce=8V, Ic=1Vebo(V)60Vce=8V, Ic=1Cob(pF) Vcb=30V, Ie=Vebo(V)0100Veb=3V, Ic=0hfeft(MHz) Vcb=20V, Ie=Ic(A)60200Vce=7V, Ic=0Cob(pF)hfeVcb=25V, Ie=Vebo(V)0500Veb=3V, Ic=0Vcb=5V, Ic=1Vebo(V)0500Vcb=12V, Ie=PG(dB) Vcb=10V, Ie=Vebo(V)0220Vcb=10V, Ie=ft(MHz) Vcb=40V, Ie=Vebo(V)0320Vce=5V, Ic=5ft(MHz) Vcb=20V, Ie=Ic(A)60200Vce=10V, Ic=Cob(pF) Vcb=10V, Ie=Vebo(V)100200Vce=10V, Ic=ft(GHz) Vcb=15V, Ie=Vebo(V)00Vce=3V, Ic=8ft(MHz) Vcb=10V, Ic=Vebo(V)6500Vce=10V, Ic=Cre(pF) Vcb=15V, Ie=Vebo(V)00Vce=3V, Ic=2ft(MHz) Vce=10V, Ic=Vebo(V) 4.50Vce=10V, Ic=Cob(pF) Vce=10V, Ic=Vebo(V)8500Vce=10V, Ie=Cre(pF) Vcb=10V, Ie=Vebo(V) 1.1 1.4Ie=-3mA, f=2Cob(pF) Vce=8V, Ic=2Vebo(V)80Vce=8V, Ic=2Cob(pF) Vce=20V, Ib=Vebo(V)0260Vcb=6V, Ie=-ft(MHz) Vce=5V, Ic=1Vebo(V)2000Vce=5V, Ic=1Cob(pF) Vcb=6V, Ie=-Vebo(V)6500Ie=-1mA, f=1Cre(pF) Vcb=20V, Ie=Vebo(V)00.5Veb=2V, Ic=0hfeVcb=24V Vebo(V)0180Vce=6V, Ic=2ft(MHz) Vcb=24V Vebo(V)0180Vce=6V, Ic=2ft(MHz) Vcb=24V Vebo(V)0270Vce=6V, Ic=1ft(MHz) Vce=10V, Ic=Vebo(V)9000Vce=10V, Ic=Cob(pF) Vce=10V, Ic=Vebo(V)5500Vce=10V, Ic=Cre(pF) Vce=10V, Ic=Vebo(V) 2.20Vce=10V, Ic=Cob(pF) Vce=10V, Ic=Vebo(V)9000Vce=10V, Ic=Cre(pF) Vce=10V, Ic=Vebo(V)00Vce=10V, Ic=Cob(pF) Vce=10V, Ic=Vebo(V)00Vce=10V, Ic=Cob(pF) Vce=10V, Ic=Vebo(V)20Vce=10V, Ic=Cob(pF) Vcb=10V, Ie=Vebo(V) 1.2 1.6Ie=-15mA, f=Cre(pF) Vce=10V, Ic=Vebo(V) 3.50Vce=10V, Ic=Cob(pF) Vce=10V, Ic=Vebo(V)40Vce=10V, Ic=Cob(pF) Vce=5V, Ic=1Vebo(V)450600Vcb=28V, Ie=PG(dB) Vce=10V, Ic=Vebo(V)9000Vce=10V, Ic=Cc．rbb' Vcb=15V, Ie=Vebo(V)0200Veb=3V, Ic=0hfehfeVcb=25V, Ie=Vebo(V)01000Veb=3V, Ic=0hfeVcb=15V, Ie=Vebo(V)02Veb=3V, Ic=0Vcb=20V, Ie=Ic(A)60200Vce=10V, Ic=Cob(pF) Vcb=20V, Ie=Ic(A)60200Vce=10V, Ic=Cob(pF) Vcb=10V, Ie=Vebo(V)0200Vce=10V, Ic=ft(GHz) Veb=1V, Ic=0Vebo(V)150300Vce=8V, Ic=7ft(GHz)Vebo(V)60200Vce=10V, Ic=Cob(pF) Veb=2V, Ie=0Vcb=35V, Ie=Vebo(V)04Veb=3V, Ic=0hfeVce=12V, Ic=Vebo(V)2300Vce=12V, Ic=Cob(pF) Vce=6V, Ic=1Vebo(V)9400Vce=6V, Ic=5Cob(pF)hfeVcb=25V, Ie=Vebo(V)01Veb=3V, Ic=0hfeVcb=25V, Ie=Vebo(V)02Veb=3V, Ic=0hfeVcb=25V, Ie=Vebo(V)03Veb=3V, Ic=0Vcb=15V, Ie=Vebo(V)05Veb=3V, Ic=0hfeVcb=10V, Ie=Vebo(V) 1.2 1.6Ie=-15mA, f=Cre(pF) Vcb=15V, Ie=Vebo(V)00Vcb=5V, Ic=1Cob(pF) Vcb=15V, Ie=Vebo(V)00Vcb=5V, Ic=1Cob(pF)Vcb=15V, Ie=Vebo(V)00Vcb=5V, Ic=5Cob(pF)Vcb=15V, Ie=Vebo(V)00Vce=5V, Ic=1Cob(pF)Vcb=15V, Ie=Vebo(V)00Vce=5V, Ic=3Cob(pF)Vce=5V, Ic=5Vebo(V)40Vce=10V, Ic=Cob(pF)Vcb=10V, Ie=Vebo(V)2300Ie=-1mA, f=2Cre(pF)Vce=5V, Ic=1Vebo(V)3000Vcb=50V, Ie=PG(dB)Vce=6V, Ic=1Vebo(V)5500Vce=6V, Ic=1Cre(pF)Vcb=35V, Ie=Vebo(V)0240Vce=12V, Ic=ft(MHz)Vcb=35V, Ie=Vebo(V)0240Vce=12V, Ic=ft(MHz)Vce=8V, Ic=4Vebo(V) 5.50Ic=40mA, f=8Cob(pF)Vce=10V, Ic=Vebo(V) 4.50Ie=-20mA, f=Cob(pF)Vcb=15V, Ie=Vebo(V)05Veb=3V, Ic=0hfeVcb=15V, Ie=Vebo(V)03Veb=3V, Ic=0hfeVce=6V, Ic=1Vebo(V)5500Vce=6V, Ic=1Cre(pF)Vcb=35V, Ie=Vebo(V)0240Vce=12V, Ic=ft(MHz)Vcb=35V, Ie=Vebo(V)0240Vce=12V, Ic=ft(MHz)Vcb=30V, Ie=Vebo(V)0240Vce=12.5V, Icft(MHz)Vcb=30V, Ie=Vebo(V)0300Vce=6V, Ic=1ft(MHz)Vce=4V, Ic=2Vebo(V)00Vce=4V, Ic=2Cre(pF)Vce=10V, Ic=Vebo(V) 3.50Vce=10V, Ic=Cob(pF)Vce=10V, Ic=Vebo(V)10Vce=10V, Ic=Cob(pF)Vce=10V, Ic=Vebo(V)10Vce=10V, Ic=Cre(pF)Vce=10V, Ic=Vebo(V) 3.50Vce=10V, Ic=Cob(pF)Vce=10V, Ic=Vebo(V) 1.20Vce=10V, Ic=Cob(pF)Vce=10V, Ic=Vebo(V) 2.20Vce=10V, Ic=Cob(pF)Vce=10V, Ic=Vebo(V)50Vce=10V, Ic=Cob(pF)Vce=10V, Ic=Vebo(V)8500Ic=10V, Ie=-5Cre(pF)Vce=10V, Ic=Vebo(V) 1.10Vce=10V, Ie=Cob(pF)Vce=10V, Ic=Vebo(V)10Vce=10V,Ie=Cob(pF)Vce=10V, Ic=Vebo(V)20Vce=10V, Ie=Cob(pF)Vcb=20V, Ie=Ic(A)00.1Veb=2V, Ic=0hfeVce=6V, Ic=1Vebo(V)3200Vce=6V, Ic=1Cob(pF)Vcb=10V, Ie=Vebo(V)2300Ie=-1mA, f=2Cre(pF)Vce=5V, Ic=1Vebo(V)0320Vcb=12V, Ie=Vce=5V, Ic=5Vebo(V)110150Vcb=12V, Ie=Vce=6V, Ic=1Vebo(V)6000Vce=6V, Ie=-Cob(pF)Vce=6V, Ic=1Vebo(V)2500Vce=6V, Ie=-Cob(pF)Vcb=25V, Ie=Vebo(V)0200Veb=3V, Ic=0hfehfeVcb=25V, Ie=Vebo(V)0400Veb=3V, Ic=0Vcb=25V, Ie=Vebo(V)0500Veb=3V, Ic=0hfehfeVcb=25V, Ie=Vebo(V)01Veb=3V, Ic=0Vebo(V)150300Vce=8V, Ic=2ft(GHz) Veb=2V, Ic=0Ic(A)60250Vce=10V, Ic=ft(GHz) Veb=2V, Ic=0Vce=6V, Ic=1Vebo(V)3200Vce=6V, Ic=1Cre(pF)Vce=6V, Ic=1Vebo(V)3200Vce=6V, Ic=1Cre(pF)Vcb=20V, Ie=Ic(A)60200Vce=10V, Ic=Cob(pF)Vcb=20V, Ie=Vebo(V)50Vce=13.5V, Icft(GHz)Vcb=5V, Ic=1Vebo(V)7000Vcb=12V, Ie=PG(dB)Vcb=15V, Ie=Vebo(V)05Veb=3V, Ic=0hfehfeVcb=15V, Ie=Vebo(V)03Veb=3V, Ic=0Vcb=20V Vebo(V)0270Vce=10V, Ic=ft(GHz)Vcb=20V Vebo(V)0270Vce=10V, Ic=ft(GHz)hfeVcb=15V, Ie=Vebo(V)02Veb=2V, Ic=0hfeVcb=15V, Ie=Vebo(V)03Veb=2V, Ic=0Vcb=15V, Ie=Ic(mA)0200Vce=8V, Ic=1ft(GHz)ft(GHz) Vcb=20V, Ie=Vebo(V)500Vce=13.5V, IcVcb=30V,Ie=Ic(A)60200Vce=10V, Ic=Cob(pF) Vce=6V, Ic=1Vebo(V)3500Vce=6V, Ic=1Cre(pF) Vce=6V, Ic=1Vebo(V)3500Vce=6V, Ic=1Cre(pF) Vce=6V, Ic=1Vebo(V)7500Vce=6V, Ic=1Cre(pF) Vce=6V, Ic=1Vebo(V)3200Vce=6V, Ic=1Cre(pF)hfeVcb=10V, Ie=Vebo(V)0500Veb=2V, Ic=0Vcb=15V, Ie=Vebo(V)00Vce=5V, Ic=0Cob(pF) Vce=5V, Ic=1Vebo(V) 6.50Vce=5V, Ic=1Cob(pF) Vce=4V, Ic=5Vebo(V) 1.450Vce=4V, Ic=5Cob(pF)hfeVcb=10V, Ie=Vebo(V)0200Veb=2V, Ic=0Vcb=10V, Ie=Vebo(V)0300Veb=2V, Ic=0hfeVcb=15V, Ie=Vebo(V)0500Veb=3V, Ic=0hfeVcb=15V, Ie=Vebo(V)0300Veb=3V, Ic=0hfehfeVcb=15V, Ie=Vebo(V)0500Veb=3V, Ic=0Vcb=15V, Ie=Vebo(V)03Veb=3V, Ic=0hfeVcb=25V, Ie=Vebo(V)0180Vce=6V, Ic=1ft(MHz) Vcb=10V, Ie=Vebo(V) 1.1 1.4Ie=-3mA,f=20Cob(pF) Vcb=24V Vebo(V)0180Vce=6V, Ic=2ft(MHz) Vcb=20V Vebo(V)0180Vce=6V, Ic=1ft(MHz) Vcb=20V Vebo(V)0270Vce=10V, Ic=ft(GHz) Vcb=20V Vebo(V)0270Vce=10V, Ic=ft(GHz) Vcb=20V Vebo(V)0270Vce=10V, Ic=ft(GHz) Vcb=15V, Ie=Ic(mA)0200Vce=8V, Ic=5ft(GHz) Vcb=15V, Ie=Ic(mA)0200Vce=8V, Ic=1ft(GHz) Vce=10V, Ic=Vebo(V) 3.50Vce=10V, Ic=Cob(pF) Vce=10V, Ic=Vebo(V)40Vce=10V, Ic=Cob(pF) Vcb=15V, Ie=Vebo(V)0300Veb=2V, Ic=0hfehfeVcb=15V, Ie=Vebo(V)05Veb=3V, Ic=0hfeVcb=10V, Ie=Vebo(V)0300Veb=2V, Ic=0hfeVcb=10V, Ie=Vebo(V)0500Veb=2V, Ic=0Vcb=15V, Ie=Vebo(V)05Veb=2V, Ic=0hfeVce=10V, Ic=Vebo(V) 4.50Ic=10mA, f=8Cob(pF) Vebo(V) 2.40Vce=10V, Ic=Cre(pF) Vce=10V,Ic=5Vcb=15V, Ie=Vebo(V)150320Vce=3V, Ic=8ft(GHz) Vce=10V, Ic=Vebo(V)6500Vce=10V, Ic=Cre(pF)ft(GHz) Vcb=25V, Ie=Vebo(V)150300Vce=10V,Ic=5Vcb=15V, Ie=Vebo(V)100200Vce=3V,Ic=8mft(GHz) Vcb=30V, Ie=Vebo(V)70200Vce=10V, Ic=ft(MHz) Vce=5V, Ic=2Vebo(V) 4.50Vce=5V, Ic=2Cob(pF) Vce=5V, Ic=2Vebo(V) 4.50Vce=5V, Ic=2Cob(pF) Vce=5V, Ic=2Vebo(V) 4.50Vce=2V, Ic=2Cob(pF) Vce=4V, Ic=5Vebo(V) 1.9 2.5Ie=-5mA, f=2Cob(pF) Vcb=30V, Ie=Vebo(V)50150Vce=12V, Ic=PG(dB) Vcb=25V, Ie=Vebo(V)150300Vce=10V, Ic=ft(GHz) Vcb=30V, Ie=Ic(A)60200Vce=10V, Ic=Cob(pF) Vcb=30V, Ie=Ic(A)60200Vce=10V, Ic=Cob(pF) Vcb=30V, Ie=Ic(A)60200Vce=10V, Ic=Cob(pF) Vce=6V, Ic=1Vebo(V)7500Vce=6V, Ic=4Cre(pF)Vce=5V, Ic=5Vebo(V)0330Vcb=12V, Ie=hfeVcb=15V, Ie=Vebo(V)05Veb=2V, Ic=0hfeVcb=25V, Ie=Vebo(V)04Veb=2V, Ic=0Vce=10V, Ic=Ic(mA)50Vce=10V, Ic=Cob(pF) Vcb=20V, Ie=Ic(A)50200Vce=10V, Ic=Cob(pF) Vcb=20V, Ie=Ic(A)50200Vce=10V, Ic=Cob(pF) Vcb=30V, Ie=Ic(A)60150Vce=10V, Ic=Cre(pF) Vce=10V, Ie=Vebo(V)2500Ie=-1mA, f=2Cre(pF) Vce=10V, Ic=Vebo(V)3000Ie=-1mA, f=2Cre(pF) Vcb=6V, Ie=-Vebo(V)6500Ie=-1mA, f=2Cre(pF) Vce=5V,Ic=50Vebo(V) 4.40Vce=5V, Ic=5Cob(pF)Vebo(V) 4.50Vce=5V, Ic=2Cob(pF) Vce=5V,Ic=20Vcb=10V, Ie=Vebo(V) 1.2 1.6Ie=-15mA, f=Cre(pF) Vce=10V, Ic=Vebo(V) 6.50Vce=10V, Ic=Cob(pF) Vce=10V, Ic=Vebo(V)70Vce=10V, Ic=Cob(pF) Vce=10V, Ic=Vebo(V) 6.50Vce=10V, Ic=Cob(pF) Vce=10V, Ic=Vebo(V)5500Vce=10V, Ic=Cre(pF)hfeVcb=10V, Ie=Vebo(V)0300Veb=2V, Ic=0Vcb=18V, Ie=Vebo(V)0320Vce=12V,Ic=2ft(MHz) Vce=6V, Ic=1Vebo(V)9400Vce=6V, Ic=5Cob(pF) Vcb=10V, Ie=Vebo(V)0200Veb=2V, Ic=0hfeVcb=20V, Ie=Ic(A)0200Vce=10V, Ic=Cob(pF) Vcb=18V, Ie=Vebo(V)0500Vce=12V, Ic=ft(MHz) Vce=10V, Ic=Vebo(V)50Vce=10V, Ic=Cob(pF) Vce=4V, Ic=2Vebo(V)00Vce=4V, Ic=2Cre(pF) Vce=12V, Ic=Vebo(V)2300Vce=12V, Ic=Cob(pF) Veb=2V, Ic=0Vebo(V)60200Vce=10V, Ic=Cob(pF) Vce=10V, Ic=Vebo(V) 3.50Vce=10V, Ic=Cob(pF) Vce=5V, Ic=2Vebo(V) 4.50Vce=5V, Ic=2Cob(pF) Vce=5V, Ic=2Vebo(V)60Vce=5V, Ic=2Cob(pF) Vce=5V, Ic=2Vebo(V)60Vce=5V, Ic=2Cob(pF) Vce=5V, Ic=2Vebo(V)60Vce=5V, Ic=2Cob(pF) Vcb=30V, Ie=Ic(A)60200Vce=10V, Ic=Cob(pF) Vcb=30V, Ie=Ic(A)60200Vce=10V, Ic=Cob(pF) Vcb=30V, Ie=Ic(A)60200Vce=10V, Ic=Cob(pF) Vcb=20V, Ie=Ic(A)60200Vce=10V, Ic=Cob(pF) Vcb=20V, Ie=Ic(A)60200Vce=10V, Ic=Cob(pF) Vce=10V, Ic=Vebo(V)20Vce=10V, Ie=Cre(pF) Vce=10V, Ic=Vebo(V)20Ic=10V, Ie=-5Cre(pF) Vcb=10V, Ie=Vebo(V)0130Vce=10V, Ic=ft(GHz) Vcb=10V, Ie=Vebo(V)0300Vce=10V, Ic=ft(GHz) Vcb=10V, Ie=Vebo(V)100250Vce=8V, Ic=2ft(GHz) Vcb=10V, Ie=Vebo(V)0250Vce=8V, Ic=2ft(GHz) Vcb=10V, Ie=Vebo(V)100250Vce=6V, Ic=1ft(GHz) Vce=6V, Ic=1Vebo(V)100Vce=6V, Ic=1Cre(pF) Vce=10V, Ic=Vebo(V)70Vce=10V, Ic=Cre(pF) Vce=8V, Ic=2Vebo(V)80Vce=8V, Ic=2Cre(pF) Vce=10V, Ic=Vebo(V) 6.50Vce=10V, Ic=Cob(pF) Vce=10V, Ic=Vebo(V)70Vce=10V, Ic=Cob(pF) Vce=10V, Ic=Ic(mA) 6.50Vce=10V, Ic=Cob(pF) Vce=10V, Ic=Vebo(V)70Vce=10V, Ic=Cob(pF) Vce=10V, Ic=Vebo(V)70Vce=10V, Ic=Cob(pF)hfeVcb=25V, Ie=Vebo(V)0500Veb=3V, Ic=0hfeVcb=10V, Ie=Vebo(V)0200Veb=2V, Ic=0hfeVce=5V, Ic=5Vebo(V) 1.20Vce=5V, Ic=1Cob(pF) Vcb=30V, Ie=Ic(A)60100Vce=10V, Ic=Cob(pF) Vcb=30V, Ie=Ic(A)60100Vce=10V, Ic=Cob(pF) Vebo(V)40Vce=1V, Ic=1|S21e| * Vce=1V, Ic=2μAVce=8V, Ic=2Vebo(V)60Ic=20mA, f=8Cob(pF) Vce=1V, Ic=1Vebo(V)40Ic=1mA, f=80Cob(pF) Vce=5V, Ic=1Vebo(V) 6.50Vce=5V, Ic=1Cob(pF) Vce=10V, Ic=Vebo(V) 1.20Vce=10V, Ic=Cob(pF) Vce=10V, Ic=Vebo(V) 2.20Vce=10V,Ic=5Cre(pF) Vce=10V, Ic=Vebo(V)30Vce=10V, Ic=Cre(pF) Vce=10V, Ic=Vebo(V) 3.50Vce=10V, Ic=Cre(pF) Vce=10V, Ic=Vebo(V)50Vce=10V, Ic=Cre(pF) Vce=10V, Ic=Vebo(V)50Vce=10V, Ic=Cre(pF) Vce=10V, Ic=Vebo(V)30Vce=10V, Ic=Cre(pF) Vce=10V, Ic=Vebo(V) 3.50Vce=10V, Ic=Cre(pF) Vce=10V, Ic=Vebo(V)0.8 1.1Vce=10V, Ic=Cre(pF) Vce=10V, Ic=Vebo(V)50Vce=10V, Ic=Cre(pF) Vce=10V, Ic=Vebo(V) 2.90Vce=10V, Ic=Cob(pF) Vcb=25V Vebo(V)0270Vce=10V,Ic=4ft(GHz) Vcb=25V Vebo(V)0270Vce=10V, Ic=ft(GHz)hfeVcb=15V, Ie=Vebo(V)05Veb=2V, Ic=0Veb=1V, Ic=0Vebo(V)0250Vce=10V, Ic=hfe比* Vcb=35V,Ie=Vebo(V)0240Vce=12V, Ic=ft(MHz) Veb=1V, Ic=0Vebo(V)100250Vce=8V, Ic=2hfe比* Vcb=30V, Ie=Ic(A)60100Vce=10V, Ic=Cob(pF) Vcb=15V, Ie=Ic(A)60200Vce=7V, Ic=0Cob(pF) Vcb=15V, Ie=Ic(A)60200Vce=7V, Ic=0Cob(pF) Vcb=20V, Ie=Ic(A)60200Vce=10V, Ic=Cob(pF) Vcb=20V, Ie=Ic(A)60200Vce=10V, Ic=Cob(pF) Vcb=20V, Ie=Ic(A)60200Vce=10V, Ic=Cob(pF) Vce=10V, Ic=Vebo(V) 1.10Vce=10V, Ic=Crb(pF) Vce=8V, Ic=2Vebo(V)60Ic=20mA, f=8Cob(pF) Vcb=10V Vebo(V)0270Vce=10V, Ic=ft(GHz) Vcb=10V Vebo(V)0270Vce=10V, Ic=ft(GHz) Vcb=15V Vebo(V)0270Vce=10V, Ic=ft(GHz) Vce=12.5V,Ic Vebo(V)00Vce=12.5V, IcCob(pF) Vce=10V, Ic=Vebo(V)40Vce=10V, Ie=Cob(pF) Vcb=30V, Ie=Vebo(V)100200Vce=10V, Ic=Cre(pF) Vce=10V, Ic=Vebo(V) 3.80Vce=10V, Ic=Cob(pF) Vce=12.5V, IcVebo(V)00Vce=12.5V,Ic Cob(pF) Vce=8V, Ic=2Vebo(V)8.50Ic=20mA, f=1Cob(pF)hfeVcb=15V, Ie=Vebo(V)05Veb=3V, Ic=0Vce=10V, Ic=Vebo(V)01Vce=10V,Ic=2ft(GHz) Vcb=10V, Ie=Vebo(V)0220Vcb=10V, Ie=ft(MHz) Vcb=6V, Ie=-Vebo(V)6500Ie=-1mA, f=2Cre(pF) Vcb=10V, Ie=Vebo(V)0 1.6Ie=-15mA, f=Cre(pF) Vcb=10V, Idd Vebo(V) 1.1 1.4Ie=-3mA, f=2Cob(pF)Cob(pF) Vce=10V, Ic=Vebo(V) 4.50Ie=-10mA,f=8Vce=4V, Ic=5Vebo(V) 1.9 2.5Ie=-5mA, f=2Cob(pF) Vce=10V, Ic=Vebo(V)2300Ie=1mA, f=20Cre(pF) Vce=8V, Ic=2Vebo(V)60Ic=20mA, f=8Cob(pF) Vcb=24V Vebo(V)0270Vce=6V, Ic=1ft(MHz) Vcb=24V Vebo(V)0180Vce=6V, Ic=2ft(MHz)Vcb=20V Vebo(V)0180Vce=6V, Ic=1ft(MHz)ft(MHz) Vcb=24V Vebo(V)0180Vce=6V,Ic=2mVcb=24V Vebo(V)0270Vce=6V, Ic=1ft(MHz) Vcb=20V Vebo(V)0270Vce=10V, Ic=ft(GHz) Vcb=10V Vebo(V)0180Vce=10V, Ic=ft(GHz) Vcb=10V Vebo(V)0270Vce=10V, Ic=ft(GHz) Vcb=15V Vebo(V)0270Vce=10V, Ic=ft(GHz) Vcb=10V Vebo(V)0270Vce=10V,Ic=5ft(GHz) Vce=3.4V, Ic=Vebo(V) 1.50Ic=1.8mA, f=8Cob(pF) Vce=10V, Ic=Vebo(V)01Vce=10V, Ic=ft(GHz) Vce=10V, Ic=Vebo(V)01Vce=10V, Ic=ft(GHz) Vcb=10V Vebo(V)0270Vce=10V, Ic=ft(GHz) Vcb=10V Vebo(V)0270Vce=10V, Ic=ft(GHz) Vcb=15V Vebo(V)0270Vce=10V, Ic=ft(GHz) Vce=10V, Ic=Vebo(V)60Vce=10V, Ic=Cre(pF) Vce=10V, Ic=Vebo(V) 6.50Vce=10V, Ic=Cre(pF) Vce=8V, Ic=2Vebo(V)90Vce=8V, Ic=2Cre(pF) Vce=6V, Ic=1Vebo(V)100Vce=6V, Ic=1Cre(pF) Vcb=24V Vebo(V)0270Vce=6V, Ic=1ft(MHz) Vcb=20V Vebo(V)0180Vce=6V, Ic=1ft(MHz) Vcb=20V Vebo(V)0270Vce=10V, Ic=ft(GHz) Vcb=25V Vebo(V)0270Vce=10V, Ic=ft(GHz) Vce=5V, Ic=2Vebo(V)60Vce=5V, Ic=2Cob(pF) Vcb=24V Vebo(V)0180Vce=6V, Ic=2ft(MHz) Vcb=15V, Ie=Vebo(V)0500Veb=3V, Ic=0hfeVcb=30V, Ie=Vebo(V)90180Vce=6V, Ic=1ft(MHz) Vcb=50V, Ie=Vebo(V)90180Vce=6V, Ic=1ft(MHz) Vcb=20V, Ie=Vebo(V)0220Vce=3V, Ic=5ft(GHz) Vcb=25V, Ie=Vebo(V)100240Vce=5V, Ic=2ft(GHz) Vcb=25V,Ie=Vebo(V)100200Vce=3V, Ic=5ft(GHz) Vcb=15V, Ie=Vebo(V)100180Vce=10V, Ic=ft(GHz) Vcb=15V, Ie=Vebo(V)0200Vce=10V, Ic=ft(GHz)ft(GHz) Veb=1V, Ic=0Vebo(V)100250Vce=1V, Ic=2μA Vce=5V, Ic=5Vebo(V) 2.40Vce=5V, Ic=2Cob(pF) Vce=5V, Ic=5Vebo(V) 3.80Vce=5V, Ic=2Cob(pF) Vce=3V, Ic=1Vebo(V)8500Vce=3V, Ic=1Crb(pF) Vce=6V, Ic=1Vebo(V)5500Vce=6V, Ic=1Cre(pF) Veb=2V, Ic=0ft(GHz) Vebo(V)0200Vce=3V,Ic=20Vebo(V)110250Vce=3V, Ic=7ft(GHz) Veb=1V, Ic=0Vebo(V)0240Vce=3V, Ic=7ft(GHz) Veb=1V, Ic=0Vebo(V)100250Vce=3V, Ic=5ft(GHz) Veb=1V, Ic=0Vce=5V, Ic=2Vebo(V)10Vce=5V, Ic=2Cob(pF) Vce=10V, Ic=Vebo(V) 1.3 1.9Ie=-15mA, f=Cob(pF) Vce=4V, Ic=5Vebo(V)20Ie=-5mA, f=2Cob(pF) Vcb=10V, Ie=Vebo(V)0500Veb=2V, Ic=0hfeVce=3V, Ic=1Vebo(V)8500Vce=3V, Ic=1Crb(pF) Vce=10V, Ic=Vebo(V) 2.40Vce=10V, Ic=Cre(pF) Vcb=10V, Ie=Vebo(V)150320Vce=3V, Ic=8ft(GHz) Vcb=10V, Ie=Vebo(V)0130Vce=10V, Ic=ft(GHz) Vcb=10V, Ie=Vebo(V)0300Vce=10V, Ic=ft(GHz) Vce=10V, Ic=Vebo(V)6500Vce=10V, Ic=Cre(pF) Vcb=25V, Ie=Vebo(V)150300Vce=10V, Ic=ft(GHz) Vcb=15V, Ie=Vebo(V)100200Vce=3V, Ic=8ft(GHz) Vcb=20V, Ie=Vebo(V)100250Vce=10V, Ic=ft(GHz)Vcb=30V, Ie=Vebo(V)70200Vce=10V, Ic=ft(MHz)Vcb=25V, Ie=Vebo(V)50180Vce=5V, Ic=6PG(dB)Cob(pF) Vce=5V, Ic=1Vebo(V)3000Ie=-10mA, f=ft2(MHz) Vcb=15V, Ie=Vebo(V)100200Vce=5V, Ic=5ft(GHz) Vcb=15V, Ie=Vebo(V)100200Vce=5V, Ic=5ft(GHz) Vcb=15V, Ie=Vebo(V)100200Vce=5V, Ic=5ft(GHz) Vcb=15V, Ie=Vebo(V)100200Vce=5V, Ic=5ft(GHz) Vcb=12V, Ie=Vebo(V)120250Vce=5V, Ic=2ft(GHz) Vcb=12V, Ie=Vebo(V)120250Vce=5V, Ic=2ft(GHz) Vcb=12V, Ie=Vebo(V)120250Vce=5V, Ic=2ft(GHz)Cob(pF) Vce=12V, Ic=Vebo(V)2300Vce=12V,Ic=2Vce=12V, Ic=Vebo(V)2300Vce=12V, Ic=Cob(pF) Vcb=24V Vebo(V)0270Vce=6V, Ic=1ft(MHz) Vcb=20V Vebo(V)0270Vce=10V, Ic=ft(GHz) Vcb=15V, Ie=Vebo(V)05000Veb=2V, Ic=0hfeVcb=10V, Ie=Vebo(V)0220Vce=10V, Ie=ft(MHz)Ie=10μA, Ic=0Vebo(V)0260Vcb=6V, Ie=-ft(MHz) Vcb=15V, Ie=Vebo(V)0320Vce=10V, Ic=ft(MHz) Vcb=20V Vebo(V)0180Vce=6V, Ic=1ft(MHz) Vce=10V, Ic=Vebo(V)2300Vcb=10V, Ie=Cre(pF) Vcb=10V, Ie=Vebo(V)120250Vce=8V, Ic=1ft(GHz) Vebo(V)0350Vce=10V, Ic=ft(GHz) Vbe=2V, Ic=0Vbe=2V, Ic=0Vebo(V)0200Vce=10V, Ic=ft(GHz) Vcb=12V, Ie=Vebo(V)2500Vce=5V, Ic=5Vce(sat) Vcb=25V, Ie=Vebo(V)0200Vce=5V, Ic=5ft(GHz) Vcb=20V, Ie=Vebo(V)0250Vce=5V, Ic=5ft(GHz) Vcb=10V Vebo(V)0180Vce=10V, Ic=ft(GHz) Vcb=10V Vebo(V)0270Vce=10V, Ic=ft(GHz) Vebo(V)0320Vce=5V, Ic=5Cob(pF) Veb=4V, Ic=0ft(MHz) Vcb=60V, Ie=Vebo(V)0700Vce=6V, Ib=2Vcb=30V Vebo(V)80180Vce=10V, Ic=ft(MHz) Vcb=30V Vebo(V)82180Vce=10V, Ic=ft(MHz) Vcb=10V Vebo(V)0560Vce=5V, Ic=5ft(MHz) Vebo(V)0200Vce=10V, Ic=ft(GHz) Veb=2V, Ic=0Vcb=15V, Ie=Vebo(V)120250Vce=5V, Ic=1ft(GHz) Vcb=15V, Ie=Vebo(V)120250Vce=5V, Ic=1ft(GHz) Veb=1V, Ic=0Vebo(V)120300Vce=8V, Ic=2ft(GHz) Vcb=15V, Ie=Vebo(V)120250Vce=5V, Ic=1ft(GHz) Vcb=10V, Ie=Vebo(V)150300Vce=8V, Ic=2ft(GHz) Vcb=10V, Ie=Vebo(V)0400Vce=4V, Ic=5ft(GHz) Vcb=80V, Ie=Vebo(V)0200Vce=10V, Ic=ft(GHz) Vebo(V)150300Vce=8V, Ic=2ft(GHz) Veb=2V, Ic=0Vcb=25V, Ie=Vebo(V)50180Vce=5V, Ic=1Vbe=1V, Ic=0Vebo(V)0250Vce=10V, Ic=ft(GHz) Vbe=1V, Ic=0Vebo(V)0250Vce=8V, Ic=2ft(GHz) Vbe=1V, Ic=0Vebo(V)0250Vce=6V, Ic=7ft(GHz)Vebo(V)0250Vce=10V, Ic=ft(GHz) Vbe=1V, Ic=0Vebo(V)0250Vce=8V, Ic=2ft(GHz) Vbe=1V, Ic=0Vbe=1V, Ic=0Vebo(V)0250Vce=6V, Ic=7ft(GHz) Vce=1V, Ic=1Vebo(V)50Vce=1V, Ic=1Cob(pF) Vce=1V, Ic=1Vebo(V)50Vce=1V, Ic=1Cob(pF) Vce=1V, Ic=1Vebo(V)50Vce=1V, Ic=1Cob(pF)ft(GHz)Vcb=10V, Ie=Vebo(V)0270Vce=5V,Ic=20ft(GHz) Vcb=10V, Ie=Vebo(V)0270Vce=5V,Ic=5m Vcb=10V, Ie=Vebo(V)0270Vce=5V, Ic=5ft(GHz) Vcb=10V, Ie=Vebo(V)0270Vce=5V, Ic=2ft(GHz) Vcb=10V, Ie=Vebo(V)0270Vce=5V, Ic=2ft(GHz) Vcb=10V, Ie=Vebo(V)0270Vce=5V, Ic=2ft(GHz) Vcb=10V, Ie=Vebo(V)0270Vce=5V, Ic=2ft(GHz) Vcb=10V, Ie=Vebo(V)0270Vce=5V, Ic=1ft(GHz) Vcb=10V, Ie=Vebo(V)0270Vce=5V, Ic=1ft(GHz) Vcb=10V, Ie=Vebo(V)0270Vce=5V, Ic=1ft(GHz) Vcb=10V, Ie=Vebo(V)0270Vce=5V, Ic=1ft(GHz) Vcb=10V, Ie=Vebo(V)0270Vce=5V, Ic=4ft(GHz) Vcb=10V, Ie=Vebo(V)0270Vce=5V, Ic=4ft(GHz) Vcb=10V, Ie=Vebo(V)0270Vce=5V, Ic=4ft(GHz) Vcb=15V, Ie=Vebo(V)120250Vce=5V, Ic=2ft(GHz) Vcb=12V, Ie=Vebo(V)120250Vce=5V,Ic=20ft(GHz)ft(GHz) Vebo(V)0150Vce=5V,Ic=5m Veb=2V, Ic=0Vcb=15V, Ie=Vebo(V)120250Vce=5V, Ic=1ft(GHz) Vcb=12V, Ie=Vebo(V)120250Vce=5V, Ic=2ft(GHz) Vcb=12V, Ie=Vebo(V)120250Vce=5V, Ic=2ft(GHz) Vcb=20V, Ie=Vebo(V)120250Vce=5V, Ic=1ft(GHz) Vcb=20V, Ie=Vebo(V)120250Vce=5V, Ic=1ft(GHz) Vcb=15V, Ie=Vebo(V)120250Vce=5V, Ic=2ft(GHz) Vcb=15V, Ie=Vebo(V)120250Vce=5V, Ic=2ft(GHz) Vcb=15V, Ie=Vebo(V)120250Vce=5V, Ic=2ft(GHz) Veb=2V, Ic=0Vebo(V)0200Vce=10V, Ic=Cob(pF) Vcb=40V, Ie=Vebo(V)0200Vce=6V, Ic=1ft(MHz) Vcb=12V, Ie=Vebo(V)120250Vce=5V, Ic=2ft(GHz) Vcb=10V, Ie=Vebo(V)0270Vce=5V, Ic=2ft(GHz) Vcb=10V, Ie=Vebo(V)0270Vce=5V, Ic=1ft(GHz) Vebo(V)0175Vce=3V, Ic=5ft(GHz) Vcb=5V, Ie=0Vebo(V)0175Vce=3V, Ic=1ft(GHz) Vcb=5V, Ie=0Vebo(V)0175Vce=3V, Ic=5ft(GHz) Vcb=5V, Ie=0Vebo(V)0175Vce=3V, Ic=1ft(GHz) Vcb=5V, Ie=0Vebo(V)0175Vce=3V, Ic=5ft(GHz) Vcb=5V, Ie=0Vebo(V)0175Vce=3V, Ic=1ft(GHz) Vcb=5V, Ie=0Vebo(V)250600Vce=5V, Ic=5Cob(pF) Vcb=8V, Rbe∞Vcb=10V, Ie=Vebo(V)250600Vce=5V, Ic=5Cob(pF) Vcb=10V, Ie=Vebo(V)250600Vce=5V, Ic=5Cob(pF) Vcb=10V, Ie=Vebo(V)250600Vce=5V, Ic=5Cob(pF) Vcb=12V, Ie=Vebo(V)120250Vce=5V, Ic=2ft(GHz) Vcb=15V, Ie=Vebo(V)120250Vce=5V, Ic=2ft(GHz) Vcb=12V, Ie=Vebo(V)120250Vce=5V, Ic=2ft(GHz) Vcb=12V, Ie=Vebo(V)120250Vce=5V, Ic=2ft(GHz) Vcb=15V, Ie=Vebo(V)120250Vce=5V, Ic=1ft(GHz) Vcb=15V, Ie=Vebo(V)120250Vce=5V, Ic=1ft(GHz) Vcb=12V, Ie=Vebo(V)120250Vce=5V, Ic=2ft(GHz) Vcb=12V Vebo(V)160270Vce=2V, Ic=5ft(MHz) Vcb=12V Vebo(V)160270Vce=2V, Ic=5ft(MHz) Vcb=15V, Ie=Vebo(V)0120Vce=5V, Ic=5ft(GHz) Vcb=15V, Ie=Vebo(V)0120Vce=5V, Ic=5ft(GHz)Vcb=10V, Ie=Vebo(V)0160Vce=3V, Ic=7ft(GHz)Vebo(V)0175Vce=3V, Ic=5ft(GHz)Vebo(V)0175Vce=3V, Ic=1Cob(pF) Vcb=5V, Ie=0Vcb=10V, Ie=Vebo(V)120250Vce=3V, Ic=7ft(GHz) Vcb=10V, Ie=Vebo(V)100250Vce=8V, Ic=2ft(GHz) Vcb=10V, Ie=Vebo(V)100250Vce=6V, Ic=1ft(GHz) Vebo(V)0175Vce=3V, Ic=5ft(GHz) Vcb=5V, Ie=0Vebo(V)0175Vce=3V, Ic=1Cob(pF) Vcb=5V, Ie=0Vcb=15V, Ie=Vebo(V)120250Vce=5V, Ic=1ft(GHz) Vcb=12V, Ie=Vebo(V)120250Vce=5V, Ic=2ft(GHz) Vcb=12V, Ie=Vebo(V)120250Vce=5V, Ic=2ft(GHz) Vcb=10V, Ie=Vebo(V)0240Vce=5V, Ic=1ft(GHz) Vcb=10V, Ie=Vebo(V)0240Vce=5V, Ic=1ft(GHz) Vcb=10V, Ie=Vebo(V)0240Vce=5V, Ic=1ft(GHz) Vcb=12V, Ie=Vebo(V)90160Vce=5V, Ic=2ft(GHz) Vcb=12V, Ie=Vebo(V)90160Vce=5V, Ic=2ft(GHz) Vce=6V, Ic=1Vebo(V)9400Vce=6V, Ic=5Cob(pF) Vebo(V)4000Vce=10V, Ic=Cob(pF) Vce=0.5V, Ic=Vcb=25V, Ie=Vebo(V)0300Vce=6V, Ic=1ft(MHz) Vcb=15V, Ie=Vebo(V)0100Veb=2.5V, Ic=hfeft(MHz) Vcb=12V, Ie=Vebo(V)0180Vce=6V,Ic=1m Vcb=15V, Ie=Vebo(V)01Veb=3V, Ic=0hfeVce=6V, Ic=1Vebo(V)4700Ie=-1mA, f=1Cob(pF) Vce=10V, Ic=Vebo(V)2300Ic=1mA, f=20Cre(pF)hfeVcb=15V, Ie=Vebo(V)0100Veb=3V, Ic=0Vcb=15V, Ie=Vebo(V)50180Vce=10V, Ic=Vcb=20V, Ie=Vebo(V)0240Vce=12V, Ic=ft(MHz)Pc(mW)200Cre(pF)0 1.2 1503000Ie=1mA, f=2001 1.5Ie=0, f=1MHz Pt(mW)300|S21e| *81000.950Vcb=-5V, Ie=Pc(mW)200Cre(pF)00.750 1.1 1.7Vcb=-6V, f=1Pc(mW)150Cc．rbb'01101 1.5Ie=0, f=1MHz Pt(mW)250|s21e| *8100 2.14Ie=0, f=1MHz Pt(mW)800td(ns)0 3.5 2504000Vce=-10V, Ie Pt(mW)200Cob(pF)0 1.101 1.5Ie=0, f=1MHz Pt(mW)3000000.750Vcb=-5V, Ie=Pc(mW)150Cre(pF)00.6Pc(mW)400Vce(sat)0-0.1 1503000Ie=1mA, f=200 1.1 1.7Vcb=-6V, f=1Pc(mW)150Cc．rbb'011Pc(mW)300Cre(pF)0 1.2 1503000Ie=2mA, f=20Pc(mW)300Cob(pF)00 02000Vce=-12V, Ic=02000Vce=-12V, Ic=Pc(mW)300Cob(pF)00Pt(mW)250Cob(pF)0 1.5 340Vce=-10V, Ic=Pc(W)1Cob(pF)0 2.7 05000Ie=10mA, f=2Pc(mW)150NF(dB)0 2.8 1503000Ie=1mA, f=20Pc(mW)250|S21e| *500 1.53Vce=-10V, Ic=1502300Vce=-6V, Ic=Pc(mW)150Cre(pF)0 1.1 500Vce=-5V, Ic=Pc(W)*1ft(GHz)0 1.5 2004000Vce=-10V, Ie Pc(mW)200Cob(pF)00.85Pc(mW)250Cre(pF)00.75 0.6 1.20Vce=-10V, Ic=Pc(mW)125NF(dB)0 2.8 1503000Vcb=-10V,Ie=2004000Vce=-10V, Ie Pc(mW)150Cob(pF)00.85Pc(W)1Cob(pF)05 2003000Vce=-20V, Ic=0 1.2 1.6Vcb=-10V, f=Pc(mW)250Cre(pF)00.9 2004000Vce=-10V, Ie Pc(mW)*150Cob(pF)00.850 1.2 1.6Vcb=-10V, f=Pc(mW)150Cre(pF)00.9 3006500Vce=-5V, Ie=Pc(mW)150Cob(pF)0 1.2 05500Vce=-1V, Ic=Pc(mW)2000000.9 1.1Ie=0, f=1MHz Pc(mW)250|S21e| *50Pc(mW)400Cre(pF)0 1.2 1503000Ie=1mA, f=201502500Vce=6V, Ie=-Pt(mW)200Cob(pF)0 1.9 0.810Vce=6V, Ie=-Pc(mW)250Cob(pF)00.6 4506500Ie=-1mA, f=2Pc(mW)400PG(dB)200 0.6 1.2 1.6Ie=-15mA, f=Pc(mW)400PG(dB)0200.810Vce=6V, Ie=-Pt(mW)250Cob(pF)00.61.520Vce=6V, Ie=-Pc(mW)250Cob(pF)00.50 1.1 1.5Vcb=10V, Ie=Pc(mW)250|S21e| *56 2070180Vce=15V, Ic=Pc(W)0PG(dB)9100 1.1 1.5Vcb=10V, Ie=Pc(mW)100Cre(pF)00.9 1502500Ie=-1mA, f=2Pc(mW)400NF(dB)0 2.8 30000Ie=-10mA, f=Pc(W)1PG(dB)220 30000Ie=-10mA, f=Pc(W)1PG(dB)220 1.200Vce=15V, Ie=Pt(W)*5ft2(GHz) 1.4 1.7048Ie=-1mA, f=1Pc(mW)800Re(hie)*040 91216Ie=-30mA, f=Pt(W)*3Cob(pF)04 2504000Vce=10V,Ie=Pt(mW)800Cob(pF)040 1.1 1.5Vcb=10V, Ie=Pc(mW)250PG(dB)13152 2.70Vce=10V, Ic=Pt(W)3Cob(pF)01 150200Vce=10V, Ic=Pt(W)*4ft(GHz) 1.62 0.601Vce=3V, Ic=1Pt(mW)300△Vbe(V)00 0.601Vce=5V, Ic=3Pt(mW)400△Vbe(V)0001 1.3Ie=0, f=1MHz Pt(mW)250Cc．rbb'*0120 1.9 2.2Ie=0, f=1MHz Pt(mW)250Cc．rbb' *010 360550820Ie=-5mA, f=1Pc(W)400PG(dB)2125 360550820Ie=-5mA, f=1Pc(W)400PG(dB)2125 1050180Vce=10V, Ic=Pc(W)2PG(dB)100 0.801Vce=5V, Ic=1Pt(mW)300△Vbe(V)00 0.801Vce=10V, Ic=Pt(mW)300△Vbe(V)0002500Vcb=-10V, Ie Pc(mW)125Cob(pF)0 1.5 3005000Vce=6V, Ie=-Pc(mW)150Cob(pF)0 1.4 3005000Vce=6V, Ie=-Pc(mW)150Cob(pF)0 1.400.350.45Vcb=12V, Ie=Pc(mW)250PG(dB)252800.350.45Vcb=12V, Ie=Pc(mW)250PG(dB)1822 3006500Vce=-5V, Ie=Pc(mW)200Cob(pF)0 1.2 012Vcb=10V, Ie=Pc(mW)300Cc．rbb'010 012Vcb=10V, Ie=Pc(mW)300Cc．rbb'010Pc(mW)100Cc．rbb'0000.70Vce=6V, f=1M0.801Vce=5V, Ic=1Pt(mW)300△Vbe(V)00 0.801Vce=5V, Ic=1Pt(mW)300△Vbe(V)00 0.801Vce=10V, Ic=Pt(mW)300△Vbe(V)00 0.801Vce=10V, Ic=Pt(mW)300△Vbe(V)00 1050180Vce=10V, Ic=Pc(W)1PG(dB)14.50 1050180Vce=10V, Ic=Pc(W)3PG(dB) 6.70 1050180Vce=10V, Ic=Pc(W)3PG(dB)100 1050180Vce=10V, Ic=Pc(W)1PG(dB)10.70 1050180Vce=10V, Ic=Pc(W)1PG(dB)100 1050180Vce=10V, Ic=Pc(W)*15PG(dB)100 1050180Vce=10V, Ic=Pc(W)*10PG(dB)7.80 1050180Vce=10V, Ic=Pc(W)*20PG(dB) 6.70 1050180Vce=10V, Ic=Pc(W)3PG(dB) 3.70 1050180Vce=10V, Ic=Pc(W)3PG(dB) 5.40Pc(W)1PG(dB)120 1050180Vce=12V,Ic=11050180Vce=10V, Ic=Pc(W)1PG(dB)9.20 1050180Vce=10V, Ic=Pc(W)1PG(dB)100 1050180Vce=10V, Ic=Pc(W)1PG(dB)7.5000.75 1.1Ie=0, f=1MHz Pt(mW)250PG(dB)1315 1050180Vce=10V, Ic=Pc(W)0PG(dB)15.70 1050180Vce=7V, Ic=5Pc(W)0PG(dB)130 1050180Vce=7V, Ic=0Pc(W)0PG(dB)90 1503000Vce=6V, Ie=-Pc(mW)250Cob(pF)0 1.6 1503000Vce=6V, Ie=-Pc(mW)250Cob(pF)0 1.6 3005000Vce=6V, Ie=-Pc(mW)150Cob(pF)0 1.2 1503000Vce=6V, Ie=-Pc(mW)250Cob(pF)0 1.6Pc(mW)250Cob(pF)0 1.6 1503000Vce=6V, Ie=11001500Vce=10V, Ic=Pc(W)1Cob(pF)045 3570300Vce=10V, Ic=Pc(W)0PG(dB)130Pc(W)2PG(dB)8.80 0-300Po=15W(PEP1050180Vce=10V, Ic=Pc(W)7PG(dB)12.30 00250Vcb=12V, Ie=Pc(W)*60PG(dB)120 1050180Vce=10V, Ic=Pc(W)0PG(dB) 6.70 2050110Vce=25V, Ic=Pc(W)3PG(dB)8.20 2050110Vce=25V, Ic=Pc(W)4PG(dB)7000.550Vcb=10V, Ie=Pt(mW)*250|S21e| *7.59.300.60Vcb=10V, Ie=Pt(mW)290|S21e| *5 6.700.350Vcb=8V, Ie=0Pt(mW)*250|S21e| * 1.5 2.7 3570180Vce=10V, Ic=Pc(W)1PG(dB)13.80000.5(V), Ic=20mA Pc(mW)600ft(MHz)30050000.10(V), Ic=10mA Pc(mW)400NF(dB)0 2.8Pc(mW)300Cob(pF)0.80 30000Vce=12.5V, IcRth(j-c)**20ηc(%)6070 0710Vcb=10V, f=11050180Vce=10V, Ic=Pc(W)2PG(dB)13.80 12.200Pc(W)*175IMD(dB)00 1503000Ie=-1mA, f=2Pc(mW)200NF(dB)0 2.8 1802500Vce=10V, Ic=Pc(mW)750Cob(pF)015Rth(j-c)**20ηc(%)5565 0710Vcb=10V, f=10 6.50Vce=14V, Ic=Pt(W)*6Cob(pF)00.9 65000Vce=10V, Ic=Pc(mW)250Cob(pF)0 1.200.30.4Vcb=10V, Ie=Pc(mW)250PG(dB)2024 60000Vce=10V, Ic=Pc(mW)250Cob(pF)0 1.200.751Ie=0, f=1MHz Pt(mW)250|S21e| *91000.370.7Ie=0, f=1MHz Pt(mW)250CG(dB)152300.70.9Vcb=10V, Ie=Pc(mW)200PG(dB)1417Pt(mW)580|S21e| *8900.40Vcb=8V, f=1M4506500Ie=-1mA, f=1Pc(mW)400PG(dB)2024 00150Vcb=12V, Ie=Pc(W)*40PG(dB)17000.81Ic=1mA, f=10Pc(mW)150PG(dB)024 *******Vce=10V, Ic=Pt(mW)*600Cob(pF)01 02300Vce=12V, Ie=Pc(mW)250Cob(pF)0 1.8 02300Vce=12V, Ie=Pc(mW)250Cob(pF)0 1.8 1503000Vce=6V, Ie=-Pc(mW)200Cob(pF)0 1.300.550.8Vcb=10V, Ie=Pc(mW)200PG(dB)141600.230.45Vcb=12V, Ie=Pc(mW)200PG(dB)182300.71Vcb=10V, Ie=Pc(mW)200PG(dB)141800.270.45Vcb=10V, Ie=Pc(mW)200CG(dB)162300 1.5Vcb=10V, Ie=Pc(mW)2000000 1.5Vcb=10V, Ie=Pc(mW)2000000.9 1.5Vcb=10V, Ie=Pc(mW)310Cc．rbb'012010Ic=1mA, f=10Pc(mW)150PG(dB)0200 1.150Vcb=10V, Ie=Pc(mW)300Cre(pF)00.7500.90Vcb=10V, Ie=Pc(mW)300Cre(pF)00.6 12.200Pc(W)*250IMD(dB)000020(ps), Ic=5mA,Pc(mW)300CG(dB)1620 1080300Vce=10V, Ic=Pc(W)0PG(dB)100 1050180Vce=10V, Ic=Pc(W)2PG(dB)14.50 1060180Vce=10V, Ic=Pc(W)4PG(dB)8.200 2.3 3.5Vcb=10V, Ie=Rth(j-c)**21ηc(%)50550710Vcb=10V, Ie=Rth(j-c)**10ηc(%)5560 050Vce=10V, Ic=Pt(mW)600Cob(pF)00.788.50Vce=8V, Ic=7Pt(mW)400Cob(pF)00.20 2.54Vcb=10V, Ie=Pt(W)*700 2050110Vce=25V, Ic=Pc(W)*170PG(dB)6000 3.5Vcb=10V, Ie=Pc(mW)150NF(dB)0500.90Vcb=10V, Ie=Pc(mW)10000 1080180Vce=10V, Ic=Pc(W)2PG(dB)130 1030180Vce=10V, Ic=Pc(W)4PG(dB)11.80 1040180Vce=10V, Ic=Pc(W)3PG(dB)9.30 1040180Vce=10V, Ic=Pc(W)5PG(dB)7000 1.5Ic=1mA, f=10Pc(mW)400Crb(pF)00.80025Vcb=10V, Ie=Pc(W)*15PG(dB)10.80 0080Vcb=10V, Ie=Pc(W)*3500 0110160Vcb=10V, Ie=Pc(W)*7000。
2SJ352中文资料
2SJ351, 2SJ352Silicon P-Channel MOS FETADE-208-1431st. EditionApplicationLow frequency power amplifierComplementary pair with 2SK2220, 2SK2221Features• High power gain• Excellent frequency response• High speed switching• Wide area of safe operation• Enhancement-mode• Good complementary characteristics• Equipped with gate protection diodesOrdering InformationType No.VDSX2SJ351–180 V2SJ352–200 V2SJ351, 2SJ3522OutlineAbsolute Maximum Ratings (Ta = 25°C)ItemSymbol Ratings Unit Drain to source voltage 2SJ351V DSX–180V2SJ352–200Gate to source voltage V GSS ±20V Drain currentI D –8A Body to drain diode reverse drain current I DR –8A Channel dissipation Pch*1100W Channel temperature Tch 150°C Storage temperature Tstg –55 to +150°C Note:1.Value at T C = 25°C2SJ351, 2SJ3523Electrical Characteristics (Ta = 25°C)ItemSymbol Min Typ Max Unit Test conditions Drain to source 2SJ351V (BR)DSX–180——VI D = –10 mA, V GS = 10 Vbreakdown voltage2SJ352–200——Gate to source breakdown voltageV (BR)GSS ±20——V I G = ±100 µA, V DS = 0Gate to source cutoff voltage V GS(off)–0.15—–1.45V I D = –100 mA, V DS = –10 V Drain to source saturation voltageV DS(sat)——–12V I D = –8 A, V GD = 0*1Forward transfer admittance |y fs |0.7 1.0 1.4S I D = –3 A, V DS = –10 V*1Input capacitance Ciss —800—pF V GS = 5 V, V DS = –10 V,Output capacitanceCoss —1000—pF f = 1 MHzReverse transfer capacitance Crss —18—pF Turn-on time t on —320—ns V DD = –30 V, I D = –4 A Turn-off time t off—120—nsNote:1.Pulse test2SJ351, 2SJ35242SJ351, 2SJ3526Hitachi CodeJEDECEIAJWeight (reference value)TO-3P—Conforms5.0 gUnit: mmCautions1.Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,copyright, trademark, or other intellectual property rights for information contained in this document.Hitachi bears no responsibility for problems that may arise with third party’s rights, includingintellectual property rights, in connection with use of the information contained in this document.2.Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use.3.Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,traffic, safety equipment or medical equipment for life support.4.Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installationconditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product.5.This product is not designed to be radiation resistant.6.No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi.7.Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products.Hitachi, Ltd.Semiconductor & Integrated Circuits.Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.Hitachi Asia Pte. Ltd.16 Collyer Quay #20-00Hitachi TowerSingapore 049318Tel: 535-2100Fax: 535-1533URLNorthAmerica : http:/Europe : /hel/ecg Asia (Singapore): .sg/grp3/sicd/index.htm Asia (Taiwan): /E/Product/SICD_Frame.htm Asia (HongKong): /eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htmHitachi Asia Ltd.Taipei Branch Office3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105)Tel: <886> (2) 2718-3666Fax: <886> (2) 2718-8180Hitachi Asia (Hong Kong) Ltd.Group III (Electronic Components)7/F., North Tower, World Finance Centre,Harbour City, Canton Road, Tsim Sha Tsui,Kowloon, Hong Kong Tel: <852> (2) 735 9218Fax: <852> (2) 730 0281 Telex: 40815 HITEC HXHitachi Europe Ltd.Electronic Components Group.Whitebrook ParkLower Cookham Road MaidenheadBerkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000Fax: <44> (1628) 778322Hitachi Europe GmbHElectronic components Group Dornacher Stra§e 3D-85622 Feldkirchen, Munich GermanyTel: <49> (89) 9 9180-0Fax: <49> (89) 9 29 30 00Hitachi Semiconductor (America) Inc.179 East Tasman Drive,San Jose,CA 95134 Tel: <1> (408) 433-1990Fax: <1>(408) 433-0223For further information write to:。
2SC2235中文资料(toshiba)中文数据手册「EasyDatasheet - 矽搜」
芯片中文手册,看全文,戳
东芝晶体管
音频功率放大器应用 驱动级放大器的应用
硅NPN外延型（厘进程）
2SC2235
2SC2235
单位：mm
• 为了补充2SA965.
绝对最大额定值
（TA = 25°C）
特点
符
评级
Unit
集电极基极电压
集电极 - 发射极电压
发射极基极电压 集电极电流 基极电流 集电极耗散功率 结温 存储温度范围
100 ms*
10 ms*
50
30 Collector current I
*: Single nonrepetitive 10
pulse Ta = 25°C
5 Curves must be derated
3 linearly with increase in
罗马电子2SC5161高压切换晶体管说明书
/2SC5171-datasheet.html
2SC5171
Toshiba
Silicon NPN transistor for power amplifier and driver stage amplifier applications
/2SC5171-datasheet.html
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Products Catalog Index
PART NO. MANUFACTURER
DESCRIPTION
URL
2SC5172
Toshiba
Silicon NPN transistor for switching regulator and high voltage switching applications high speed DC-DC converter applications
2SC518A
Toshiba
Si NPN Power BJT
/2SC518A-datasheet.html
2SC519A
N/A
Transistor Replacements
/2SC519A-datasheet.html
2SC5189
Sanyo Semiconductor
Bipolar NPN UHF-Microwave Transisitor
/2SC5189-datasheet.html
2SC518A
N/A
Silicon NPN
/2SC518A-datasheet.html
2SC5161
ROHM Electronics
High voltage switching transistor
2SJ221中文资料
3
2SJ221
Drain to Source Saturation Voltage VDS (on) (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage –10 Static Drain to Source on State Resistance RDS (on) (Ω) 5 3 1 0.3 0.1 0.03 0.01 –1 –3 –10 –30 Drain Current ID (A) –100 Pulse Test Static Drain to Source on State Resistance vs. Drain Current
VDS = –10 V Pulse Test
O r pe
s m (1 ) ) ot °C Sh 25 = (T C
n
at io
–30
–12
–8 75°C –4 TC = 25°C –25°C
–ቤተ መጻሕፍቲ ባይዱ0
0
–4 –12 –16 –8 –20 Drain to Source Voltage VDS (V)
0
–1 –3 –4 –2 –5 Gate to Source Voltage VGS (V)
–16
–100 0
20 60 80 40 Gate Charge Qg (nc)
–20 100
5 –0.1 –0.3
–1 –3 –10 –30 Drain Current ID (A)
–100
2SJ221
Reverse Drain Current vs. Source to Drain Voltage –50 Reverse Drain Current IDR (A) –40 Pulse Test
2SC系列三极管参数
2SC系列三极管参数2SC1000 SI-N 55V 0.1A 0.2W 80MHz2SC1008 SI-N 80V 0.7A 0.8W 75MHz2SC1012A SI-N 250V 60mA 0.75W >80MHz2SC1014 SI-N 50V 1.5A 7W2SC1017 SI-N 75V 1A 60mW 120MHz2SC1030 SI-N 150V 6A 50W |2SC1046 SI-N 1000V 3A 25W2SC1047 SI-N 30V 20mA 0.4W 650MHz |2SC1050 SI-N 300V 1A 40W2SC1051 SI-N 150V 7A 60W 8MHz |2SC1061 SI-N 50V 3A 25W 8MHz=H1062SC1070 SI-N 30V 20mA 900MHz |2SC1080 SI-N 110V 12A 100W 4MHz2SC109 SI-N 50V 0.6A 0.6W |2SC1096 SI-N 40V 3A 10W 60MHz2SC1106 SI-N 350V 2A 80W |2SC1114 SI-N 300V 4A 100W 10MHz2SC1115 SI-N 140V 10A 100W 10MHz |2SC1116 SI-N 180V 10A 100W 10MHz2SC1161 SI-P 160V 12A 120W |2SC1162 SI-N 35V 1.5A 10W 180MHz2SC1195 SI-N 200V 2.5A 100W2SC1213C SI-N 50V 0.5A 0.4W UNI |2SC1214 SI-N 50V 0.5A 0.6W 50MHz2SC1215 SI-N 30V 50mA 0.4W 1.2GHZ | 2SC1216 SI-N 40V 0.2A 0.3W <20/402SC1226 SI-N 40/50V 2A 10W 150MHz | 2SC1238 SI-N 35V 0.15A 5W 1.7GHz2SC1247A SI-N 50V 0.5A 0.4W 60MHz | 2SC1308 SI-N 1500V 7A 50W2SC1312 SI-N 35V 0.1A 0.15W 100MHz | 2SC1318 SI-N 60V 0.5A 0.6W 200MHz2SC1343 SI-N 150V 10A 100W 14MHz | 2SC1345 SI-N 55V 0.1A 0.1W 230MHz2SC1359 SI-N 30V 30mA 0.4W 250MHz | 2SC1360 SI-N 50V 0.05A 1W >300MHz2SC1362 SI-N 50V 0.2A 0.25W 140MHz | 2SC1368 SI-N 25V 1.5A 8W 180MHz2SC1382 SI-N 80V 0.75A 5W 100MHz |2SC1384 SI-N 60V 1A 1W 200MHz2SC1393 SI-N 30V 20mA 250 mW 700MHz | 2SC1398 SI-N 70V 2A 15W2SC1419 SI-N 50V 2A 20W 5MHz2SC1426 SI-N 35V 0.2A 2.7GHz |2SC1431 SI-N 110V 2A 23W 80MHz2SC1432 N-DARL 30V 0.3A 0.3W B=40 | 2SC1439 SI-N 150V 50mA 0.5W 130MHz2SC1445 SI-N 100V 6A 40W 10MHz | 2SC1446 SI-N 300V 0.1A 10W 55MHz2SC1447 SI-N 300V 0.15A 20W 80MHz | 2SC1448 SI-N 150V 1.5A 25W 3MHz2SC1449 SI-N 40V 2A 5W 60MHz |2SC1450 SI-N 150V 0.4A 20W2SC1454 SI-N 300V 4A 50W 10MHz | 2SC1474-4 SI-N 20V 2A 0.75W 80MHz2SC1501 SI-N 300V 0.1A 10W 55MHz | 2SC1505 SI-N 300V 0.2A 15W2SC1507 SI-N 300V 0.2A 15W 80MHz | 2SC1509 SI-N 80V 0.5A 1W 120MHz2SC1515 SI-N 200V 0.05A 0.2W 110MHz | 2SC1520 SI-N 300V 0.2A 12,5W2SC1545 N-DARL 40V 0.3A 0.3W B=1K | 2SC1567 SI-N 100V 0.5A 5W 120MHz2SC1571 SI-N 40V 0.1A 0.2W 100MHz2SC1573 SI-N 200V 0.1A 1W 80MHz |2SC1577 SI-N 500V 8A 80W 7MHz2SC1583 SI-N 50V 0.1A 0.4W 100MHz |2SC1619 SI-N 100V 6A 50W 10MHz2SC1623 SI-N 60V 0.1A 0.2W 250MHz |2SC1624 SI-N 120V 1A 15W 30MHz2SC1627 SI-N 80V 0.4A 0.8W 100MHz |2SC1674 SI-N 30V .02A 600MC RF/IF2SC1675 SI-N 50V .03A 0.25W |2SC1678 SI-N 65V 3A 3W2SC1685 SI-N 60V 0.1A 150MC UNI |2SC1688 SI-N 50V 30mA 0.4W 550MHz2SC1708A SI-N 120V 50mA 0.2W 150MHz | 2SC1729 SI-N 35V 3.5A 16W 500MHz2SC1730 SI-N 30V 0.05A 1.1GHz UHF | 2SC1740 SI-N 40V 100mA 0.3W2SC1741 SI-N 40V 0.5A 0.3W 250MHz |2SC1756 SI-N 300V 0.2A >50MHz2SC1760 SI-N 100V 1A 7.9W 80MHz |2SC1775A SI-N 120V 0.05A 0.2W UNI2SC1815 SI-N 50V 0.15A 0.4W 80MHz2SC1815BL SI-N 60V 0.15A 0.4W B>350 | 2SC1815GR SI-N 60V 0.15A 0.4W B>2002SC1815Y SI-N 60V 0.15A 0.4W B>120 |2SC1827 SI-N 100V 4A 30W 10MHz2SC1832 N-DARL 500V 15A 150W B>10 | 2SC1841 SI-N 120V 0.05A 0.5W2SC1844 SI-N 60V 0.1A 0.5W 100MHz |2SC1845 SI-N 120V 0.05A 0.5W2SC1846 SI-N 120V 0.05A 0.5W |2SC1847 SI-N 50V 1.5A 1.2W2SC1855 SI-N 20V 20mA 0.25W 550MHz | 2SC1871 SI-N 450V 15A 150W <1/3us2SC1879 N-DARL+D 120V 2A 0.8W B>1 | 2SC1890 SI-N 90V 0.05A 0.3W 200MHz2SC1895 SI-N 1500V 6A 50W 2MHz |2SC1906 SI-N 19V 0.05A 0.3W2SC1907 SI-N 30V 0.05A 1100MHz |2SC1913 SI-N 150V 1A 15W 120MHz2SC1914 SI-N 90V 50mA 0.2W 150MHz | 2SC1921 SI-N 250V 0.05A 0.6W2SC1923 SI-N 30V 20mA 10mW 550MHz2SC1929 SI-N 300V 0.4A 25W 80MHz | 2SC1941 SI-N 160V 50mA 0.8W2SC1944 SI-N 80V 6A PQ=16W |2SC1945 SI-N 80V 6A 20W2SC1946A SI-N 35V 7A 50W |2SC1947 SI-N 35V 1A 4W/175MHz2SC1953 SI-N 150V 0.05A 1.2W 70MHz | 2SC1957 SI-N 40V 1A 1.8W/27MHz2SC1959 SI-N 30V 0.5A 0.5W 200MHz | 2SC1967 SI-N 35V 2A 8W 470MHz2SC1968 SI-N 35V 5A 3W 470MHz |2SC1969 SI-N 60V 6A 20W2SC1970 SI-N 40V 0.6A 5W |2SC1971 SI-N 35V 2A 12.5W2SC1972 SI-N 35V 3.5A 25W |2SC1975 SI-N 120V 2A 3.8W 50MHz2SC1980 SI-N 120V 20mA 0.25W 200MHz | 2SC1984 SI-N 100V 3A 30W B=7002SC1985 SI-N 80V 6A 40W 10MHz |2SC2023 SI-N 300V 2A 40W 10MHz2SC2027 SI-N 1500/800V 5A 50W2SC2036 SI-N 80V 1A PQ=1..4W | 2SC2053 SI-N 40V 0.3A 0.6W 500MHz2SC2055 SI-N 18V 0,3A 0,5W | 2SC2058 SI-N 40V 0.05A 0.25W2SC2060 SI-N 40V 0.7A 0.75W 150MHz | 2SC2061 SI-N 80V 1A 0.75W 120MHz 2SC2068 SI-N 300V 0.05A 95MHz | 2SC2073 SI-N 150V 1.5A 25W 4MHz2SC2078 SI-N 80V 3A 10W 150MHz | 2SC2086 SI-N 75V 1A 0.45W/27MHz2SC2092 SI-N 75V 3A 5W 27MHz | 2SC2094 SI-N 40V 3.5A PQ>15W175MHz2SC2097 SI-N 50V 15A PQ=85W | 2SC2120 SI-N 30V 0.8A 0.6W 120MHz2SC2122 SI-N 800V 10A 50W | 2SC2166 SI-N 75V 4A 12.5W RFPOWER2SC2168 SI-N 200V 2A 30W 10MHz | 2SC2200 SI-N 500V 7A 40W 1US2SC2209 SI-N 50V 1.5A 10W 150MHz | 2SC2216 SI-N 45V 50mA 0.3W 300MHz 2SC2228 SI-N 160V 0.05A 0.75W >50 | 2SC2229 SI-N 200V 50mA 0.8W 120MHz 2SC2230 SI-N 200V 0.1A 0.8W 50MHz | 2SC2233 SI-N 200V 4A 40W 8MHz2SC2235 SI-N 120V 0.8A 0.9W 120MHz | 2SC2236 SI-N 30V 1.5A 0.9W 120MHz 2SC2237 SI-N 35V 2A PQ>7.5W 175MHz | 2SC2238 SI-N 160V 1.5A 25W100MHz2SC2240 SI-N 120V 50mA .3W 100MHz | 2SC2261 SI-N 180V 8A 80W 15MHz 2SC2267 SI-N 400/360V 0.1A 0.4W | 2SC2270 SI-N 50V 5A 10W 100MHz2SC2271 SI-N 300V 0.1A 0.9W 50MHz | 2SC2275 SI-N 120V 1.5A 25W 200MHz 2SC2283 SI-N 38V 0.75A 2.8W(500MHz | 2SC2287 SI-N 38V 1.5A 7.1W 175MHz2SC2295 SI-N 30V 0.03A 0.2W 250MHz | 2SC2307 SI-N 500V 12A 100W 18MHz 2SC2308 SI-N 55V 0.1A 0.2W 230MHz | 2SC2310 SI-N 55V 0.1A 0.2W 230MHz 2SC2312 SI-N 60V 6A 18.5W/27MHz | 2SC2314 SI-N 45V 1A 5W2SC2320 SI-N 50V 0,2A 0,3W | 2SC2329 SI-N 38V 0.75A 2W 175MHz2SC2331 SI-N 150V 2A 15W POWER | 2SC2333 SI-N 500/400V 2A 40W2SC2334 SI-N 150V 7A 40W POWER | 2SC2335 SI-N 500V 7A 40W POWER 2SC2336B SI-N 250V 1.5A 25W 95MHz | 2SC2344 SI-N 180V 1.5A 25W 120MHz 2SC2347 SI-N 15V 50mA 250mW 650MHz | 2SC2362 SI-N 120V 50mA 0.4W 130MHz2SC2363 SI-N 120V 50mA 0.5W 130MHz | 2SC2365 SI-N 600V 6A 50W POWER 2SC2369 SI-N 25V 70mA 0.25W 4.5GHz | 2SC2383 SI-N 160V 1A 0.9W 100MHz 2SC2389 SI-N 120V 50mA 0.3W 140MHz | 2SC2407 SI-N 35V 0.15A 0.16W500MHz2SC2412 SI-N 50V 0.1A 180MHz | 2SC2433 SI-N 120V 30A 150W 80MHz2SC2440 SI-N 450V 5A 40W | 2SC2458 SI-N 50V 0.15A 0.2W 80MHz2SC2466 SI-N 30V 0.05A 2.2GHz | 2SC2482 SI-N 300V 0.1A 0.9W 50MHz2SC2485 SI-N 100V 6A 70W 15MHz | 2SC2486 SI-N 120V 7A 80W 15MHz2SC2491 SI-N 100V 6A 40W 15MHz | 2SC2497 SI-N 70V 1.5A 5W 150MHz2SC2498 SI-N 30V 0.05A 0.3W 3.5GHz | 2SC2508 SI-N 40V 6A 50W 175MHz2SC2510 SI-N 55V 20A 250W(28MHz) | 2SC2512 SI-N 30V 50mA 900MHz TUNE2SC2516 SI-N 150V 5A 30W <0.5/2us | 2SC2517 SI-N 150V 5A 30W <0.5/2us2SC2538 SI-N 40V 0.4A 0.7W | 2SC2539 SI-N 35V 4A 17W 175MHz2SC2542 SI-N 450V 5A 40W | 2SC2547 SI-N 120V 0.1A 0.4W2SC2551 SI-N 300V 0.1A 0.4W 80MHz | 2SC2552 SI-N 500V 2A 20W2SC2553 SI-N 500V 5A 40W 1us | 2SC2562 SI-N 60V 5A 25W 0.1us2SC2563 SI-N 120V 8A 80W 90MHz | 2SC2570A SI-N 25V 70mA 0.6W2SC2579 SI-N 160V 8A 80W 20MHz | 2SC2581 SI-N 200V 10A 100W2SC2590 SI-N 120V 0.5A 5W 250MHz | 2SC2592 SI-N 180V 1A 20W 250MHz 2SC2603 SI-N 50V 0.2A 0.3W | 2SC2610 SI-N 300V 0.1A 0.8W 80MHz2SC2611 SI-N 300V 0.1A 0.8W 80MHz | 2SC2621E SI-N 300V 0.2A10W >50MHz2SC2625 SI-N 450V 10A 80W | 2SC2630 SI-N 35V 14A 100W2SC2631 SI-N 150V 50mA 0,75W 160MHz | 2SC2632 SI-N 150V 50mA 1W160MHz2SC2634 SI-N 60V 0.1A 0.4W 200MHz | 2SC2653 SI-N 350V 0.2A 15W >50MHz 2SC2654 SI-N 40V 7A 40W | 2SC2655 SI-N 50V 2A 0.9W 0.1us2SC2656 SI-N 450V 7A 80W <1.5/4.5 | 2SC2660 SI-N 200V 2A 30W 30MHz2SC2668 SI-N 30V 20mA 0.1W 550MHz | 2SC2671 SI-N 15V 80mA 0.6W5.5GHz2SC2682 SI-N 180V 0.1A 8W 180MHz | 2SC2690 SI-N 120V 1.2A 20W 160MHz 2SC2694 SI-N 35V 20A 140W | 2SC2705 SI-N 150V 50mA 0.8W 200MHz 2SC2706 SI-N 140V 10A 100W 90MHz | 2SC2712 SI-N 50V 0.15A 0.15W80MHz2SC2714 SI-N 30V 20mA 0.1W 550MHz | 2SC2717 SI-N 30V 50mA 0.3W300MHz2SC2724 SI-N 30V 30mA 200MHz | 2SC2749 SI-N 500V 10A 100W 50MHz 2SC2750 SI-N 150V 15A 100W POWER | 2SC2751 SI-N 500V 15A 120W50MHz2SC2752 SI-N 500V 0.5A 10W <1/3.5 | 2SC2753 SI-N 17V 0.07A 0.3W 5GHz2SC2759 SI-N 30V 50mA 0.2W 2.3GHz | 2SC2786 SI-N 20V 20mA 600MHz2SC2787 SI-N 50V 30mA 0.3W 250MHz | 2SC2791 SI-N 900V 5A 100W2SC2792 SI-N 850V 2A 80W | 2SC2793 SI-N 900V 5A 100W2SC2802 SI-N 300V 0.2A 10W 80MHz | 2SC2808 SI-N 100V 50mA 0.5W140MHz2SC2810 SI-N 500V 7A 50W 18MHz | 2SC2812 SI-N 55V 0.15A 0.2W 100MHz 2SC2814 SI-N 30V 0.03A 320MHz F | 2SC2825 SI-N 80V 6A 70W B>5002SC2837 SI-N 150V 10A 100W 70MHz | 2SC2839 SI-N 20V 30mA 0.15W320MHz2SC2851 SI-N 36V 0.3A 1W 1.5GHz | 2SC2873 SI-N 50V 2A 0.5W 120MHz2SC2878 SI-N 20V 0.3A 0.4W 30MHz | 2SC2879 SI-N 45V 25A PEP=100W28MHz2SC2882 SI-N 90V 0.4A 0.5W 100MHz | 2SC288A SI-N 35V 20mA 0.15W2SC2898 SI-N 500V 8A 50W | 2SC2901 SI-N 40V 0.2A 0.6W <12/182SC2908 SI-N 200V 5A 50W 50MHz | 2SC2910 SI-N 160V 70mA 0.9W150MHz2SC2911 SI-N 180V 140mA 10W 150MHz | 2SC2912 SI-N 200V 140mA 10W 150MHz2SC2922 SI-N 180V 17A 200W 50MHz | 2SC2923 SI-N 300V 0.1A 140MHz2SC2928 SI-N 1500V 5A 50W | 2SC2939 SI-N 500V 10A 100W 2.5us2SC2958 SI-N 160V 0.5A 1W | 2SC2979 SI-N 800V 3A 40W2SC2987 SI-N 140V 12A 120W 60MHz | 2SC2988 SI-N 36V 0.5A 175MHz2SC2999 SI-N 20V 30mA 750MHz | 2SC3001 SI-N 20V 3A PQ=7W(175MHz) 2SC3019 SI-N 35V 0.4A 0.6W 520MHz | 2SC3020 SI-N 35V 1A 10W2SC3022 SI-N 35V 7A 50W | 2SC3026 SI-N 1700V 5A 50W POWER2SC3030 N-DARL 900V 7A 80W | 2SC3039 SI-N 500V 7A 52W2SC3042 SI-N 500/400V 12A 100W | 2SC3052F SI-N 50V 0.2A 0.15W 200MHz 2SC3063 SI-N 300V 0.1A 1.2W 140MHz | 2SC3067 2xSI-N 130V 50mA 0.5W 160 2SC3068 SI-N 30V 0.3A Ueb=15V B>8 | 2SC3071 SI-N 120V 0.2A Ueb=15V B> 2SC3073 SI-N 30V 3A 15W 100MHz | 2SC3074 SI-N 60V 5A 20W 120MHz2SC3075 SI-N 500V 0.8A 10W 1/1.5us | 2SC3089 SI-N 800V 7A 80W2SC3101 SI-N 250V 30A 200W 25MHz | 2SC3102 SI-N 35V 18A 170W 520MHz 2SC3112 SI-N 50V 0.15A 0.4W 100MHz | 2SC3116 SI-N 180V 0.7A 10W 120MHz 2SC3117 SI-N 180V 1.5A 10W 120MHz | 2SC3133 SI-N 60V 6A 1.5W 27MHz2SC3148 SI-N 900V 3A 40W 1us | 2SC3150 SI-N 900V 3A 50W 15MHz2SC3153 SI-N 900V 6A 100W | 2SC3157 SI-N 150V 10A 60W2SC3158 SI-N 500V 7A 60W | 2SC3164 SI-N 500V 10A 100W2SC3169 SI-N 500V 2A 25W >8MHz | 2SC3175 SI-N 400V 7A 50W 40MHz2SC3180N SI-N 80V 6A 60W 30MHz | 2SC3181N SI-N 120V 8A 80W 30MHz 2SC3182N SI-N 140V 10A 100W 30MHz | 2SC3195 SI-N 30V 20mA 0.1W550MHz2SC3199 SI-N 60V 0.15A 0.2W 130MHz | 2SC3200 SI-N 120V 0.1A 0.3W100MHz2SC3202 SI-N 35V 0.5A 0.5W 300MHz | 2SC3203 SI-N 35V 0.8A 0.6W 120MHz 2SC3205 SI-N 30V 2A 1W 120MHz | 2SC3206 SI-N 150V 0.5A 0.8W 120MHz 2SC3210 SI-N 500V 10A 100W 1us | 2SC3211 SI-N 800V 5A 70W >3MHz2SC3212 SI-N 800V 7A 3W 3.5MHz | 2SC3225 SI-N 40V 2A 0.9W 1us2SC3231 SI-N 200V 4A 40W 8MHz | 2SC3240 SI-N 50V 25A 110W 30MHz2SC3242 SI-N 20V 2A 0.9W 80MHz | 2SC3244E SI-N 100V 0.5A 0.9W 130MHz 2SC3245A SI-N 150V 0.1A 0.9W 200MHz | 2SC3246 SI-N 30V 1.5A 0.9W 130MHz 2SC3247 SI-N 50V 1A .9W 130MHz B> | 2SC3257 SI-N 250V 10A 40W 1/3.5us 2SC3258 SI-N 100V 5A 30W 120MHz | 2SC3260 N-DARL 800V 3A 50W B>10 2SC3262 N-DARL 800V 10A 100W | 2SC3263 SI-N 230V 15A 130W2SC3264 SI-N 230V 17A 200W 60MHz | 2SC3271 SI-N 300V 1A 5W 80MHz2SC3277 SI-N 500V 10A 90W 20MHz | 2SC3279 SI-N 10V 2A 0.75W 150MHz 2SC3280 SI-N 160V 12A 120W 30MHz | 2SC3281 SI-N 200V 15A 150W 30MHz 2SC3284 SI-N 150V 14A 125W 60MHz | 2SC3293 N-DARL+D 50V 1.2A 20W 1802SC3297 SI-N 30V 3A 15W 100MHz | 2SC3299 SI-N 60V 5A 20W 0.1us2SC3306 SI-N 500V 10A 100W 1us | 2SC3307 SI-N 900V 10A 150W 1us2SC3309 SI-N 500V 2A 20W 1us | 2SC3310 SI-N 500V 5A 30W 1us2SC3311 SI-N 60V 0.1A 0.3W 150MHz | 2SC3320 SI-N 500V 15A 80W2SC3326 SI-N 20V 0.3A 0.15W 30MHz | 2SC3327 SI-N 50V 0.3A 0.2W 30MHz 2SC3328 SI-N 80V 2A 0.9W 100MHz | 2SC3330 SI-N 60V 0.2A 0.3W 200MHz 2SC3331 SI-N 60V 0.2A 0.5W 200MHz | 2SC3332 SI-N 180V 0.7A 0.7W 120MHz 2SC3334 SI-N 250V 50mA 0.9W 100MHz | 2SC3345 SI-N 60V 12A 40W 90MHz 2SC3346 SI-N 80V 12A 40W 0.2us | 2SC3355 SI-N 20V 0.1A 0.6W 6.5GHz2SC3356 SI-N 20V 0.1A 0.2W 7GHz | 2SC3377 SI-N 40V 1A 0.6W 150MHz2SC3378 SI-N 120V 0.1A 0.2W 100MHz | 2SC3379 SI-N 20V 1.5A PQ=3W2SC3381 2xSI-N 80V 0.1A 0.4W 170MHz | 2SC3383 SI-N 60V 0.2A 0.5W 250MHz 2SC3397 SI-N 50V 0.1A 250MHz 46K/ | 2SC3399 SI-N 50V 0.1A 250MHz2SC3400 SI-N 50V 0.1A 250MHz 22K/ | 2SC3401 SI-N 50V .1A 46K/23KOHM 2SC3402 SI-N 50V 0.1A 250MHz 10K/ | 2SC3405 SI-N 900V 0.8A 20W 1us2SC3409 SI-N 900V 2A 80W .8uS | 2SC3416 SI-N 200V 0.1A 5W 70MHz2SC3419 SI-N 40V 0.8A 5W 100MHz | 2SC3420 SI-N 50V 5A 10W 100MHz2SC3421O SI-N 120V 1A 1.5W BJT O-G | 2SC3421Y SI-N 120V 1A 10W 120MHz 2SC3422Y SI-N 40V 3A 10W 100MHz | 2SC3423 SI-N 150V 50mA 5W 200MHz 2SC3425 SI-N 500V 0.8A 10W | 2SC3446 SI-N 800V 7A 40W 18MHz2SC3447 SI-N 800V 5A 50W 18MHz | 2SC3456 SI-N 1100/800V 1.5A 40W2SC3457 SI-N 1100V 3A 50W | 2SC3460 SI-N 1100V 6A 100W2SC3461 SI-N 1100/800V 8A 120W | 2SC3466 SI-N 1200/650V 8A 120W2SC3467 SI-N 200V 0.1A 1W 150MHz | 2SC3468 SI-N 300V 0.1A 1W 150MHz 2SC3486 SI-N 1500V 6A 120W | 2SC3502 SI-N 200V 0.1A 1.2W2SC3503 SI-N 300V 0.1A 7W 150MHz | 2SC3504 SI-N 70V 0.05A 0.9W 500MHz 2SC3505 SI-N 900V 6A 80W | 2SC3507 SI-N 1000/800V 5A 80W2SC3509 N-DARL+D 900V 10A 100W 0. | 2SC3514 SI-N 180V 0.1A 10W200MHz2SC3518 SI-N 60V 5A 10W | 2SC3520 SI-N 500V 18A 130W 18MHz2SC3526 SI-N 110V 0.15A 7A 30W 1us | 2SC3528 SI-N 500V 20A 125W2SC3549 SI-N 900V 3A 40W | 2SC3552 SI-N 1100V 12A 150W 15MHz2SC3568 SI-N 150V 10A 30W | 2SC3571 SI-N 500V 7A 30W2SC3577 SI-N 850V 5A 80W 6MHz | 2SC3581 SI-N 55V 0.4A 0.9W 150MHz 2SC3591 SI-N 400V 7A 50W | 2SC3595 SI-N 30V 0.5A 5W 2GHz2SC3596 SI-N 80V 0.3A 8W 700MHz | 2SC3597 SI-N 80V 0.5A 10W 800MHz 2SC3599 SI-N 120V 0.3A 8W 500MHz | 2SC3600 SI-N 200V 0.1A 7W 400MHz 2SC3601 SI-N 200V 0.15A 7W 400MHz | 2SC3608 SI-N 20V 0.08A 6.5GHz2SC3611 SI-N 50V 0.15A 4W 300MHz | 2SC3616 SI-N 25V 0.7A 250MHz2SC3621 SI-N 150V 1.5A 10W 100MHz | 2SC3623 SI-N 60V 0.15A 0.25W B=1K 2SC3632 SI-N 600V 1A 10W 30MHz | 2SC3636 SI-N 900/500V 7A 80W2SC3642 SI-N 1200V 6A 100W 200ns | 2SC3655 SI-N 50V 0.1A 0.4W 46/23K2SC3656 SI-N 50V 0.1A 0.4W 10K/10 | 2SC3659 SI-N+D 1700/800V 5A 50W 2SC3668 SI-N 50V 2A 1W 100MHz | 2SC3669 SI-N 80V 2A 1W 0.2us2SC3675 SI-N 1500/900V 0.1A 10W | 2SC3678 SI-N 900V 3A 80W2SC3679 SI-N 900/800V 5A 100W | 2SC3680 SI-N 900/800V 7A 120W 6MHz 2SC3684 SI-N+D 1500V 10A 150W | 2SC3688 SI-N 1500V 10A 150W 0.2us 2SC3692 SI-N 100V 7A 30W <300/180 | 2SC373 SI-N 35V 0.1A 0.2W B>200 2SC3746 SI-N 80V 5A 20W 100MHz | 2SC3748 SI-N 80V 10A 30W 100/600ns 2SC3752 SI-N 1100/800V 3A 30W | 2SC3781 SI-N 120V 0.4A 15W 500MHz 2SC3782 SI-N 200V 0.2A 15W 400MHz | 2SC3783 SI-N 800V 5A 100W2SC3787 SI-N 180V 0.14A 10W 150MHz | 2SC3788 SI-N 200V 0.1A 5W 150MHz 2SC3789 SI-N 300V 0.1A 7W 70MHz | 2SC3790 SI-N 300V 0.1A 7W 150MHz 2SC3792 SI-N 50V 0.5A 0.5W 250MHz | 2SC3795A SI-N 900V 5A 40W2SC3807 SI-N 30V 2A 15W 260MHz | 2SC3808 N-DARL 80V 2A 170MHz B>802SC380TM SI-N 30V 50mA 0.3W 100MHz | 2SC3811 SI-N 40V 0.1A 0.4W450MHz2SC3831 SI-N 500V 10A 100W | 2SC3833 SI-N 500/400V 12A 100W2SC3842 SI-N 600V 10A 70W 32MHz | 2SC3844 SI-N 600V 15A 75W 30MHz 2SC3851 SI-N 80V 4A 25W 15MHz | 2SC3852 SI-N 80V 3A 25W 15MHz2SC3855 SI-N 200V 10A 100W 20MHz | 2SC3857 SI-N 200V 15A 150W 20MHz 2SC3858 SI-N 200V 17A 200W 20MHz | 2SC3866 SI-N 900V 3A 40W2SC3868 SI-N 500V 1.5A 25W 0.7us | 2SC3883 SI-N+D 1500V 6A 50W2SC3884A SI-N 1500V 6A 50W | 2SC3886A SI-N 1500V 8A 50W 0.1us2SC388A SI-N 25V 50mA 0.3W 300MHz | 2SC3890 SI-N 500V 7A 30W 500NS2SC3892A SI-N+D 1500V 7A 50W 0.4us | 2SC3893A SI-N+D 1500V 8A 50W2SC3895 SI-N 1500/800V 8A 70W | 2SC3896 SI-N 1500V 8A 70W2SC3897 SI-N 1500V 10A 70W | 2SC3902 SI-N 180V 1.5A 10W 120MHz2SC3907 SI-N 180V 12A 130W 30MHz | 2SC3927 SI-N 900V 10A 120W2SC394 SI-N 25V 0.1A 200MC RF | 2SC3940 SI-N 30V 1A 1W 200MHz2SC3943 SI-N 110V 0.15A 2W 300MHz | 2SC3944 SI-N 150V 1A 40W 300MHz 2SC3948 SI-N 850V 10A 75W 20MHz | 2SC3950 SI-N 30V 0.5A 5W2SC3952 SI-N 80V 0.5A 10W 700MHz | 2SC3953 SI-N 120V 0.2A 8W 400MHz 2SC3954 SI-N 120V 0.3A 8W 400MHz | 2SC3955 SI-N 200V 0.1A 7W 300MHz 2SC3956 SI-N 200V 0.2A 7W 70MHz | 2SC3964 SI-N 40V 2A 1.5W 1us2SC3972 SI-N 800/500V 5A 40W | 2SC3973A SI-N 900V 7A 45W2SC3979A SI-N 800V 3A 2W 10MHz | 2SC3987 N-DARL+D 50V 3A 15W2SC3996 SI-N 1500/800V 15A 180W | 2SC3998 SI-N 1500V 25A 250W POWER2SC3999 SI-N 300V 0.1A 0.75W 300MHz | 2SC4004 SI-N 900/800V 1A 30W <1/4 2SC4020 SI-N 900V 3A 50W 1us | 2SC4024 SI-N 100V 10A 35W B>3002SC4029 SI-N 230V 15A 150W 30MHz | 2SC4043 SI-N 20V 50mA 0.15W3.2GHz2SC4046 SI-N 120V 0.2A 8W 350MHz | 2SC4052 SI-N 600V 3A 40W 20MHz2SC4056 SI-N 600V 8A 45W | 2SC4059 SI-N 600/450V 15A 130W2SC4064 SI-N 50V 12A 35W 40MHz | 2SC4107 SI-N 500/400V 10A 60W2SC4119 N-DARL+D 1500V 15A 250W B | 2SC4123 SI-N+D 1500V 7A 60W2SC4125 SI-N+D 1500/800V 10A 70W | 2SC4131 SI-N 100V 15A 60W 18MHz 2SC4135 SI-N 120V 2A 15W 200MHz | 2SC4137 SI-N 25V 0.1A 300MHz2SC4138 SI-N 500V 10A 80W <1/3.5us | 2SC4153 SI-N 200V 7A 30W 0.5us2SC4157 SI-N 600V 10A 100W | 2SC4159 SI-N 180V 1.5A 15W 100MHz2SC4161 SI-N 500V 7A 30W | 2SC4169 N-DARL+D 50V 1.2A 1W B=4K 2SC4199 SI-N 1400V 10A 100W | 2SC4200 SI-N 20V 0.6A 5W 2.5GHz2SC4204 SI-N 30V 0.7A 0.6W | 2SC4231 SI-N 1200/800V 2A 30W2SC4235 SI-N 1200/800V 3A 80W | 2SC4236 SI-N 1200/800V 6A 100W2SC4237 SI-N 1200/800V 10A 150W | 2SC4242 SI-N 450/400V 7A 40W2SC4256 SI-N 1500V 10A 175W 6MHz | 2SC4278 SI-N 150V 10A 100W 30MHz 2SC4288A SI-N1600/600V 12A 200W | 2SC4289A SI-N 1500V 16A 200W2SC4290A SI-N 1500V 20A 200W | 2SC4297 SI-N 500V 12A 75W 10MHz2SC4298 SI-N 500V 15A 80W 10MHz | 2SC4300 SI-N 900V 5A 75W 1/6us2SC4304 SI-N 800V 3A 35W | 2SC4308 SI-N 30V 0.3A 0.6W 2.5GHz2SC4313 SI-N 900V 10A 100W 0.5us | 2SC4381 SI-N 150V 2A 25W 15MHz2SC4382 SI-N 200V 2A 25W 15MHz | 2SC4386 SI-N 160/120V 8A 75W20MHz2SC4387 SI-N 200V 10A 80W 20MHz | 2SC4388 SI-N 200V 15A 85W 20MHz 2SC4408 SI-N 80V 2A 0.9W 100/600ns | 2SC4429 SI-N 1100/800V 8A 60W2SC4430 SI-N 1100V 12A 65W 15MHz | 2SC4431 SI-N 120V 1.5A 20W 150MHz 2SC4439 SI-N 180V 0.3A 8W 400MHz | 2SC4467 SI-N 160/120V 8A 80W20MHz2SC4468 SI-N 200V 10A 80W 20MHz | 2SC4484 SI-N 30V 2.5A 1W 250MHz 2SC4488 SI-N 120V 1A 1W 120MHz | 2SC4511 SI-N 120V 6A 30W 20MHz 2SC4512 SI-N 120V 6A 50W 20MHz | 2SC4517 SI-N 900V 3A 30W 6MHz2SC4517A SI-N 1000V 3A 30W 0.5us | 2SC4531 SI-N+D 1500V 10A 50W2SC4532 SI-N 1700V 10A 200W 2uS | 2SC4538 SI-N 900V 5A 80W2SC454 SI-N 30V 0.1A 230MHz | 2SC4542 SI-N 1500V 10A 50W2SC4547 N-DARL+D 85V 3A 30W B>2K | 2SC4557 SI-N 900V 10A 80W<1/5.5us2SC4560 SI-N 1500V 10A 80W | 2SC458 SI-N 30V 0.1A 230MC UNI2SC4582 SI-N 600V 100A 65W 20MHz | 2SC460 SI-N 30V 0.1A 0.2W 230MHz 2SC461 SI-N 30V 0.1A 0.2W 230MHz | 2SC4744 SI-N 1500V 6A POWER2SC4745 SI-N 1500V 6A | 2SC4747 SI-N 1500V 10A 50W 0.3us2SC4758 SI-N 1500V 8A 50W HI-RES | 2SC4769 SI-N+D 1500V 7A 60W2SC4770 SI-N 1500/800V 7A 60W | 2SC4793 SI-N 230V 1A 2W 100MHz2SC4804 SI-N 900V 3A 30W 0.3us | 2SC4820 SI-N 450V 6A 30W 12MHz2SC4826 SI-N 200V 3A 1.3W 300MHz | 2SC4834 SI-N 500V 8A 45W <0.3/1.4 2SC4883A SI-N 180V 2A 20W 120MHz | 2SC4891 SI-N 1500V 15A 75W2SC4908 SI-N 900V 3A 35W 1us | 2SC4924 SI-N 800V 10A 70W2SC4977 SI-N 450V 7A 40W | 2SC5002 SI-N 1500V 7A 80W2SC5003 SI-N+D 1500V 7A 80W | 2SC5027 SI-N 1100V 3A 50W 0.3us2SC5030 SI-N 50V 5A 1.3W 150MHz | 2SC5045 SI-N 1600V 15A 75W2SC5047 SI-N 1600V 25A 250W | 2SC5048 SI-N 1500V 12A 50W 0.3us2SC5070 SI-N 30V 2A 1.5W B>800 | 2SC5086 SI-N 20V 80MA 7GHZ2SC509 SI-N 35V 0.5A 0.6W 60MHz | 2SC5144 SI-N 1700V 20A 200W2SC5148 SI-N 1500V 8A 50W 0.2us | 2SC5149 SI-N+D 1500V 8A 50W 0.2us 2SC5150 SI-N 1700V 10A 50W 03us | 2SC5171 SI-N 180V 2A 20W 200MHz 2SC5198 SI-N 140V 10A 100W 30MHz | 2SC5207 SI-N 1500V 10A 50W 0.4us 2SC5242 SI-N 230V 15A 130W 30MHz | 2SC5244A SI-N 1600V 30A 200W2SC5296 SI-N+D 1500V 8A 60W | 2SC5297 SI-N 1500V 8A 60W2SC5299 SI-N 1500V 10A 70W 0.2US | 2SC535 SI-N 20V 20mA 0.1W 0.700M 2SC536 SI-N 40V 0.1A 180MC UNI | 2SC620 SI-N 50V 0.2A 0.25W UNI2SC643 SI-N 1100V 2.5A 50W | 2SC644 SI-N 30V 50mA 0.25W2SC645 SI-N 30V 30mA 0.14W 200MHz | 2SC710 SI-N 30V 0.03A 200MHz2SC711 SI-N 30V 0.05A 150MHz | 2SC712 SI-N 30V 0.5A 150MHz2SC717 SI-N 30V 50mA 0.2W 600MHz | 2SC730 SI-N 40V 0.4A PQ=1.5W2SC732 SI-N 50V 0.15A 0.4W 150MHz | 2SC735 SI-N 35V 0.4A 0.3W UNI2SC752 SI-N 15V 100mA 0.1W | 2SC756 SI-N 40V 4A 10W 65MHz2SC784 SI-N 40V 0.02A 500MC RF | 2SC815 SI-N 60V 0.2A 0.25W 200MHz 2SC828 SI-N 30V 0.05A 0.25W UNI | 2SC829 SI-N 30V 30mA 0.4W 230MHz 2SC839 SI-N 50V 0.03A 250MHz | 2SC867 SI-N 400V 1A 23W 8MHz2SC869 SI-N 160V 30mA 0.2W 150MHz | 2SC898A SI-N 150V 7A 80W 15MHz 2SC900 SI-N 30V 0.03A 100MHz | 2SC930 SI-N 15V 0.03A 300MC RF2SC936 SI-N 1000V 1A 22W POWER | 2SC941 SI-N 35V 20mA 0.2W120MHz2SC943 SI-N 60V 0.2A 0.3W 220MHz | 2SC945 SI-N 50V 0.1A 250MC UNI 2SC982 N-DARL 40V 0.3A 0.4W。
采购技术条件-钢板516(中英文对照)
中、低温压力容器用碳钢板
3. Specification designation
材料牌号
ASME Code Sect. II 2007Ed, SA-516MGr.485
Tensile strength, Mpa抗拉强度
Yield strength, min. Mpa屈服强度
Elongation in50 mmmin. %伸长率，标矩50mm
or Elongation in200mmmin. %伸长率，标矩200mm
485~620
260
21
17
7.2Impact test (charpy V-notch): Not required
Molybdenum, max.钼的最大含量
Vanadium, max.钒的最大含量
Columbium, max.铌的最大含量
Titanium, max.钛的最大含量
0.40
0.40
0.30
0.03
0.02
0.03
Note:
A. The sum of copper, nickel, chromium and molybdenum shall not exceed 1.00% on heat analysis. Cu、Ni、Cr及Mo含量总和不应超过1.00％（熔炼分析）。
规范编号和材料等级. (SA-516MGr.485)
12.4 Dimension (T×W×L)
尺寸(T×W×L)
13.Packing, marking and loading for shipment
2SJ551资料
Maximum Avalanche Energy vs. Channel Temperature Derating 50
I AP = –18 A
40
V DD = –25 V
duty < 0.1 %
Rg > 50 Ω
30
20
10
0 25 50 75 100 125 150
Channel Temperature Tch (°C)
–12 25°C
Tc = 75°C –8
–25°C
–4
0
–1 –2 –3 –4 –5
Gate to Source Voltage V GS (V)
3
2SJ551(L),2SJ551(S)
Drain to Source Saturation Voltage V DS(on) (V)
Drain to Source Saturation Voltage vs. Gate to Source Voltage
60
40
20
0
50
100
150
200
Case Temperature Tc (°C)
Drain Current I D (A)
1000
Maximum Safe Operation Area
300
100
10 µs
30 10
3 1 0.3
OtlihmpisietearadretiboaynisRinDS(oDnCP)WOp=e(rT1ac0tio=mn12s51(m°10Cs0sh) oµts)
Gate to Source Voltage V GS (V) Switching Time t (ns)