A Loop-Improved Capacitor-Less Low-Dropout Regulator for SoC Power Management Application

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线性稳压器-dc1407a-使用手册说明书

线性稳压器-dc1407a-使用手册说明书

LT3011 DESCRIPTIONDemonstration circuit 1407A is a high voltage lowdropout micropow er linear regulator f eaturing LT®3011, w hich comes in the thermally enhanced 12-lead M SOP and 10-lead 4mmX3mm DFN packages.The DC1407A has an input voltage range f rom 3 to 80V, and is capable of delivering up to 50mA output current. Operating quiescent current is 46µA, reduc-ing to less than 1µA in shutdow n. The LT3011 in-cludes a PW RGD f lag to indicate output regulation. The delay betw een regulated output level and f lag in-dication is programmable w ith a single capacitor.The DC1407A is installed w ith ceramic capacitors,be-cause of the LT3011 ability of maintaining stability w ith ceramic output capacitors. Due to its high input voltage range, the DC1407 voltage regulator is ideally suited f or automotive and industrial applications. The LT3011 datasheet gives a complete description of the part, operation and application inf ormation. The data-sheet must be read in conj unction w ith this quick start guide f or demo circuit 1407A.Design files for this circuit board are available. Call the LTC factory., LTC and LT are registered trademarks of Linear Technology Corporation. ThinSOT and Pow erPath are trademarks of Linear Technology Corporation.Perform ance Sum m ary ( T A = 25o C )PARAM ETER FOR LI NEAR REGULATOR CONDI TI ON VALUE M inimum I nput Voltage 3VM aximum I nput Voltage 80VOutput Voltage VOUTV I N=5V, I OUT=50mAV I N=6.5V, I OUT=50mA 3.3V +/- 4% 5V +/- 4%M aximum Output Current 50mA Q U ICK STA RT PROCEDU REDemonstration circuit 1407A is easy to set up to evaluate the perf ormance of the LT3011. Ref er to Figure 1 f or proper measurement equipment setup and f ollow the procedure below:1.Bef ore proceeding to test,insert j umper JP1into the OFF position,and use VOUT Selectj umper J1 f or the desired output voltage 5Vand 3.3V. I f the output voltage is dif f erentf rom the above values,use the USER selectoption and install a resistor R6. 2.Apply input voltage across Vin to Gnd. I nsertj umper JP1 into the ON position. Check f or theproper output voltage.3.Once the proper output voltage is established,adj ust the load w ithin the operating range andobserve the output voltage regulation.DEMO C IR C U IT 1407AQ U IC K S TAR T G U IDEL T3011EMS E50m A, H ig h V o lta g e L o w Dro p o u t L in e a rR e g u la to r w ith P W R G DLT3011 VA+_L o a d +_A V++__+_+_Figure 1. Proper M easurem ent Equipm ent SetupFigure 2. M easuring I nput or Output RippleLT3011。

A5268完整版

A5268完整版

3A, 28V, 340KHz Synchronous Rectified Step-Down Converter
Maximum
-0.3V to +30V -1V to VIN+0.3 -0.3V to VSW + 6 -0.3V to +6 -0.3V to VIN 2 200
Unit
V V V V V kV
n Applications
l Distributed Power System l Networking System l FPGA, DSP, ASIC Power Supplies l Notebook Computers
C
n Typical Application
VIN 12V R4 100K Ω IN
mW
Maximum Junction Temperature
150
o
C
Solder Iron(10 Sec)**
350
* Measure θJC on backside center of Exposed Pad. ** MIL-STD-202G 210F
6
Rev.B.02
A5268
n Electrical Specifications
Unit
o
C C C
o
C
-65 to +150
o
ie
Rev.B.02
5
A5268
n Thermal Information
Parameter
Thermal Resistance* (Junction to Case) Thermal Resistance (Junction to Ambient) Internal Power Dissipation

飞机行业术语一览

飞机行业术语一览

飞机行业术语一览前部 The front(fore)part 无襟翼着陆 a flapless landing后部 The rear (aft) part 起落架 the landing gear左舷 port 推力换向器 thrust reversers右舷 starboard 滑油温度表oil temperature indicator内侧发动机the inboard engine 液压系统 hydraulic system外侧发动机the outboard engine 空调系统 air-conditioning system机头the nose 多卜勒导航系统 Doppler navigation system 腹部the belly 地速和偏流显示器 Ground speed and drift indicator 风挡 the windscreen or windshield 应答机接收机transponder receiver 机翼 the wing 升降速率rate of climb indicator机翼后缘the trailing edge 升降舵调整片指示表elevator trim indicator机翼前缘the leading edge 陀螺地平仪gyro horizon翼尖the wing tip 气象雷达weather radar操纵面the control surface 测距机指示机DME indicator副翼ailerons 罗兰接受机Loran receiver襟翼flaps 内话系统 interphone system内侧襟翼 inboard flap 右航行灯right navigation lamp外侧襟翼 outboard flap 防撞灯Anti-collision lights前缘缝翼leading edge flaps 天线俯仰控制antenna tilt control阻力板,扰流板spoilers 前反推装置操纵Forward thrust reverser controls 内、外侧扰流板inboard\outboard spoiler后反推装置操纵Aft thrust reverser controls 缝翼slats 基本重量basic operating weight升降舵elevators 最大起飞重量maximum take-off weight升降舵操纵片elevator control tab 最大着陆重量maximum landing weight方向舵rudder 最大无油重量maximum zero-fuel weight empty方向舵操纵片rudder control tab 最大业载maximum payload襟翼角flap angle 载油量fuel load襟翼调整flap setting 提前接地undershoot run全襟翼位置the full flap position 带侧滑着陆sideslip landing火警探测系统fire detection system 单发着陆single engine landing空速管防冰Pitot tube anti-icing 双发着陆two-engine landing 坐标网abac 高差计kathetometer嵌饰abaciscus 液体火箭燃烧katergol顶板abacus 冷空气滴kaltlufttorpfen 在船尾abaft 键槽key-seating 电磁制安培abampere配电板keysets 抛弃abandon大片陆地landmass列(曲)线图abas 向侧面地lateral可降低的abasable 发射器launcher使惭愧abash 左翼的leftist改变航向aboutship 水准经纬仪level-theodolite 混乱 ( 化 ) babelization 浮动levitate塔状石英babel-quartz 升力体lifting-body小杆的bacillar 光闸light-valve后退偏航backdrift 限制器limitator交流声backdrop 定位器localizer反电动势back-emf 低空战斗巡逻locap反冲backswing 远程导航LRN防护板baffle 去亮信号luminance-free signal压舱材料ballasting 溶解lysis辐射热测定器balometer 潜伏lurk座舱cabin 电磁吸盘magnechuck闭舱式飞机cab-type airplane 磁电式自动同步机 magnesyn下降的cadent 主轮main-wheel笼形天线cage antenna 供电干线main-supply垂直燃烧器calmet burner 中部舱口main-hatch无风层clam layer 多变量系统 many-variable system鸭式飞行器canard vehicle 脉塞maser平板形凸轮cam-plate 惯性力mass-force解除空袭报警cancel caution 有保护层的mat-covered转杆器cantihook 舌槽接口matchjoint指形晶dactylite 配合mating吸收敷层dark flex 基体matrix缓冲控制dash-control 军用航空MAVN仪表板灯dash light 测量器measurer点划线dash-dot-line 机械作用的mechanomorphic死点指示器dead-center indicator 中速扫描medium-fast sweep 速式仪表desd-beat metre 中速飞机medium-speed plane 推测航行法dead-reckoning 高台mesa舱面室deckhouse 小型真空泵minipump磁偏计declinometer 卫星跟踪moontrack减聚力decohesion 导航的navigational反互换器decommutator 近临界的near-critical护耳塞earplug 跨音速的near-sonic回波定位echo-bearing 细缝筛needle-slot screen 边管提升edge-lift 夜用望远镜night glass喷射器eductor 夜间着陆night landing升降式发射装置 elevator-launcher 夜间空袭night raid上飞机enplane 无人驾驶飞行no lofit使耸入云霄ensky 机头向上的水平飞行nose-high 使成急斜面escarp 下垂的nutation设备检查飞行facility checking flight 离位off-normal门顶fair light 沿轨道飞行orbit水落管fall-pipe 轨道飞行器orbiter正常运行failure-free operation 倾斜的out-of-square减退falling-off 飞越overfly脚手架falsework 无氧的oxygen-free褶合faltung 测霜仪pagoscope过滤槽filter-tank 报警设备panalarm闸板flashboard 飞行降伞parakite漂浮性floatability 领航pathfinding凹槽gab 声波记振仪phonautograph外形尺寸gabarit 航测领航员photo-navigator有走廊的galleried 位置指示器PIN飞驰的galloping 俯冲pitch down电流的galv 机旁planeside电镀器galvanizer 测雨法pluviometry活动中心ganglion 多量程仪表polyranger龙骨翼板garboard 出气冒口pop-off狭窄航道gat 观察孔porthole气体检验器gasoscope 预压空气precompressed air手操纵飞行hand-fly 跑道racecourse手动装置hand-gear 旋转机构racer舱口盖Hat 安装在机架上rack-mounted舱口HATCH 雷达导航radar navigation 严密屏蔽的heavily-shielded 无线电气象记录radiometeorogram 耐热的heat-proof 无线电遥控radio-telecontrol 直升机heliogyro 雷达信号反射器radar reflector直升机航站heliport 升降速度表rate-of-climb indicator高压的hyperbaric 转速记采器rate-of-turn record液压机hydropress 返束视象管return beam vidicon引燃ignition 后向喷管rearward-facing nozzle自现干涉圈现象idiophanism 导弹发射scream-up检查镜inspectoscope航天器试验指挥员spacecraft test conductor检测仪表装置instrumenting 搜索跟踪search-track积分仪integraph 水上飞机seaplane入侵飞机intruder 海上基地seabase交点的intersectional 飞机半局部失速semistall感觉飞行introduction 上升暖气流thermal红外线电子瞳孔仪iriscorder 起飞总重量takeoff gross weight同航线isodromic 双喷气发动机twin-jet充糊电容器jelly-filled capacitor 滑行道taixway喷气助推起飞jet-assisted take-off 行波速调管twystron急流jetstream 飞行学员tyro喷气式战斗机JF 双机two-shipper喷气式客机jetliner 飞行术wingman ship燃气升降副翼jetevon 机翼下沉的wing-low机用精铰刀Jobber's reamer 实验型货运飞机 Experimental Cargo Plane游览飞行joyride 偏航yaw振动jutter 无载试验zero-load气缸jug 区域匀化的zone-leveled马蹄袖horse-shoe cuff 马克隆尼值Micronaire value 不完全穿径 partial threading 不完全提花组织 flat jacquard with birdseye back 不溶性偶氮染料 azoic dyes 木桨粕wood pulp木薯茧cassava cocoon 木模印花block printing比甲sleeveless over-dress 比表面积specific area切茧机cocoon cutter 切片干燥chip drying切变粘度shear viscosity 切向阻力tangential resistance天然转曲cotton convolution 天鹅绒针织物knitted velour无纬织物weftless fabric 无纺织布non-woven fabric 开口shedding 开松度degree of opening 开棉球lap of cocoon opener 开口线圈open loop片金线gold flat yarn 片状服装plain piece apparel风道筘tunnel reed 匀净作用 evening and cleaning action毛巾布terry cloth 毛巾被towel blanket毛辫毛tipped wool 毛圈个数the terry number 通道结构channel architecture 共同沉淀coprecipitation通道带宽channel bandwidth 联产品co-product河岸滑塌作用channel-bank shumping 共聚酯化copolyesterification波道开关channel switch 辅塑剂coplasticizer钻头跳动bit bounce 埋头孔countersunk井场用钻头盒bit box 埋头螺栓countersunk bolt双稳触发电路bistable trigger circuit 反捻countertwist纯透辉石bistagite 耦合矩阵coupled matrix二硫化物bisulfide 偶联氧化coupled oxidation 双降藿烷bisnorhopane 连接装置coupling arrangement双频谱bispectrum 井眼方向course bearing双酚 A 型聚碳酸脂 bisphenol A polycarbonate 潜伏构造 covered structure两次稳定的聚酯丝 bistablilized polyester 套帽cover nut钻头外形bit contour 套管压力casing pressure位片处理bit-slice processing 支承cradling沥青灰岩bitumen limestone 抗裂度crack resistance 黑页岩black cat 裂纹角砾岩crackle breccia黑色褐煤black lignite 裂纹形貌crack morphology 重质油储油层black oil reservoir 管子的基墩cradle bedding黑油模型black-oil-type simulation model 顶部注气 crestal gas injection 聚集效应buildup effect 端部间隙crest clearance压力恢复试井buildup test 卷曲力crimp force油库泵bulk plant pump 临界频带critical band套管打捞矛 bull dog casting spear 井底破裂压力 critical bottom-hole pressure 插塞凸缘连接bullet-and-flange joint 反多路转换开关demultiplexer链化合物chain compound 倍减器demultiplier锰方硼石chambersite 致密地层dense formation倒棱角chamfer angle 密相提升 dense-phase lifting配位催化剂coordination catalyst 密度分离法density separation 双层取心筒core barrel of double tuberigid type 黑度曲线densograph取心作业coring operation 沉积环境depositional environment内能消耗式油藏 depletion drive pool 采竭阶段depletion stage沉积轴depoaxis 离差法departure method 堆积阶地depositional terrace 深度剖面depth profile探测深度depth of invertigation 净化器depurator深度控制测井depth-control log 重力导数 derivative of gravity井架高度derrick height 钻台横梁derrick floor sill 井架落物derrick apples 衍生脂类derived lipid减饱和desaturation 衰变产物descendant除油泥设备desludger 发送筒despatching barrel 测试柱detective pole 相消干扰 destructive interference可拆卸推进器叶片 detachable blade 确定系数determination of coefficient斜井deviated well 金刚石钻具diamond drill硬水earthy water 平缓坡度easy grade偏心轴eccentric axis 边水侵入edge water incursion有效衰减effective attenuation 喷射试验ejection test射流泵ejector 弹性流体elastic fluid弯管elbow bend 扯断伸长率elongation at failure隐蔽油藏elusive reservoir 残积砂eluvial sand预埋条状物embedded strap 外压容器external pressure 分布不匀maldistribution 管汇拖车manifold trailer 边际油田marginal oil field 海上钻井marine drilling海蚀marine erosion 油轮载量marine tankage测油罐高空outage gauging 外保护套管outside protective case露天储罐outside storage tank 超平衡钻井 overbalance drilling高架管道overhead pipe 超越离合器overrunning clutch。

实用英文缩写

实用英文缩写

3WN THREE WINDING 三相绕组A ALARM 报警AB AUXILIARY BOILER 辅助锅炉ABBRE ABBREVIATIONABN ABNORMAL 非正常ABS ABSOLUTE 绝对ABSBR ABSORBER 减震器ABT ABOUT 关于ABV ABOVE 上述AC ALTERNATING CURRENT 交流电ACB AIR CIRCUIT BREAKER 气动断路器ACC AIR COOLED CONDENSER 空冷凝汽器ACCES ACCESSORY 附件ACCL ACCELERATION 加速ACCP AIR COOLED CONDENSING UNIT 空冷凝结水单元ACCP AIR COOLED CONDENSING PLANT 空冷凝结水设备ACCUM ACCUMULATOR 蓄电池ACD ACIDIC 酸性的ACD ACID 酸ACKN ACKNOWLEDGE 承认ACS ACCESS 通道ACT ACTUAL 实际的ACTD ACTUATED 启动的ACTG ACTING 起作用的ACTIV ACTIVE 活动的ACTIV ACTIVATED 激活的ACTN ACTION 行为ACTR ACTUATOR 执行机构ACW AUXILIARY COOLING WATER 辅助冷却水AC/O AUTOMATIC CHANGE OVER 自动变更AD ANODE 阳极ADD ADDITIONAL 额外ADJ ADJUSTABLE 可调整的ADJ ADJUSTER 调节器ADJ ADJUSTING 调整ADMN ADMISSION 同意ADPTR ADAPTER 适配器ADR ADDRESS 地址ADS ADSORBER 吸收器ADV ADVANCE 优势AFT AFTER 之后AGG AGGREGATE 集合AGIT AGITATOR 搅拌器AGT AGENT 媒介AHD AHEAD 之前AIR AIR 空气AIR-V AIR VALVE 空气阀ALKALTY ALKALINITY 碱ALLOW ALLOWANCE 允许的ALTRN ALTERNATOR 交流发电机AMB AMBIENT 周围的AMM AMMETER 电表AMNA AMMONIA 氨水AMPL AMPLIFIER 放大器AMPTD AMPLITUDE 振幅AN ANION 阴离子ANAL ANALYZER 分析器ANLG ANALOG 类似物ANN ANNUNCIATOR 报警器ANN LAMPA ANNUNCIATOR LAMP ALARM 灯光报警器ANT-FM ANTI-FOAM 抗泡沫的ANT-IC ANTI-ICING 防冰的ANX ANNEX 附件;毗屋APPAR APPARATUS 设备ARBLT AIR BLAST 气喷净法ARCT AIR COLLECTING TANK 空气聚集箱ARHTR AIR HEATER 空气加热器ARR ARRESTOR 避雷器ASH ASH 灰尘ASMOISP ASH MOISTENING PUMP 润灰泵ASSY ASSEMBLY 装配ATM ATMOSPHERE 大气ATM ATMOSPHERIC 大气的ATMZR ATOMIZER 喷雾器ATP ATTEMPERATOR 保温装置ATT AUTOMATIC TURBINE TESTER 自动透平检测器AUD AUDIBLE 听得见的AUTO AUTOMATIC 自动的AUX AUXILIARY 辅助的,补助的AUXVOLT AUXILIARY VOLTAGE 辅助电压AVAIL AVAILABLE 可获得AVE AVERAGE 平均的AVR AUTOMATIC VOLTAGE REGULATOR 自动电压调节器AX AXIAL 轴向的AXS AXIS 轴A/S AIR SIDE 空气侧B-LOAD BASE LOAD 基本荷载BACKW BACKWASH 逆流BAL BALANCE 平衡BAR/GR BARRING GEAR 盘车装置BAS BASIN 盆,盆地BATT BATTERY 蓄电池BB BUS BAR 母线BBOX BLACK BOX 黑匣子BC BINARY CONTROL 二进制控制BEF BEFORE 之前BEH BEHIND 之后BF BOILER FEED 锅炉给水BHOU BOILER HOUSE 锅炉房BIN BINARY 二元的,双的BIOSY BIOCIDE GENERATION SYSTEM 生物杀灭剂产生装置BLD BLADING 安装叶片BLD BLADE 叶片BLI BLINKING 闪光的BLK BLOCKED 封锁的,联锁的BLK BLOCKING 闭锁;门插销BLO BLOCK 木块,块BLR BOILER 锅炉BLRCLD BOILER CLADDING 锅炉保温BLWR BLOWER 鼓风机,风机BNDL BUNDLE 捆,束BNK BANK 储存库;银行BOT BOTTLE 瓶子BOX BOX 盒子BP BOOSTER PUMP 升压泵,前置泵BPT BOOSTER PUMP TURBINE 汽动升压泵BR BARREL 桶BRCH BRANCH 分支,分流BRD BOARD 板BRDG BRIDGE 桥BRG BEARING 轴承BRK BREAKING 阻断,破坏BRKR BREAKER 断路器BRN BRINE 盐水BS-V BOILER STOP VALVE 锅炉关闭阀BSDG BLACK START DIESEL GENERATOR 黑启动柴油发电机BSHG BUSHING 轴衬,套管BSTM BLED STEAM 废蒸汽BSTM-V BLED STEAM VALVE 废蒸汽阀BSTR BOOSTER 调压器BTM BOTTOM 底部BTTN BUTTON 按钮BTWN BETWEEN 之间BUCHZ BUCHHOLZBUF BUFFER 缓冲器BUI BUILDING 建筑物BURN BURNER 火炉BUSDCT BUSDUCT 母线管BUT-V BUTTERFLY VALVE 蝶阀BW BALANCE WATER 平衡水B/D BLOWDOWN 排污B/P BYPASS 旁路B/PI-V BYPASS ISOLATING VALVE 旁路隔离阀B/UP BACK-UP 支持,倒退C-C COMBUSTION CHAMBER 燃烧室C-CL COMBUSTION CHAMBER LEFT 燃烧室左侧C-CR COMBUSTION CHAMBER RIGHT 燃烧室右侧CA COLD AIR 冷空气CAB CABINET 柜子CAG CAGE 笼子CAL CALIBRATION 刻度,校准CALC CALCULATED 计算出的,适当的CALC CALCULATION 计算CAN CHANNEL 水道,沟;频道CAN CANAL 槽,导管;运河CAND CANDLE 蜡烛CAP CAPACITOR 电容器CAPY CAPACITY 容量CARB CARBON 碳CARR CARRIER 行李架;载波CARR CARRYING 运输的CARWA CAR WASHING AREA 洗车区域CAT CATION 阳离子CATH CATHODE 阴极CATY CATALYZER 催化剂CB CIRCUIT BREAKER 断路器CBD CONTINUOUS BLOW DOWN 连排CBL CABLE 电缆CBO COMPRESSOR BLOW-OFF 压气机抽气CC COMBINED CYCLE 联合循环CCEP COND COLLECTING TANKEXTRACTION PUMPS 凝结水收集箱抽水泵CCP COMBINED CYCLE PROCESS 联合循环过程CCPP COMBINED CYCLE POWER PLANT 联合循环电厂CCR CENTRAL CONTROL ROOM 集控室CCT CIRCUIT 电路CCW CLOSED-CIRCUIT COOLING WATER 闭环冷却水CCWHX CLOSED COOLING WATER HEATEXCHANGER 闭式冷却水热交换器CCWP CLOSED COOLING WATER PUMP 闭式冷却水泵CD CLEAN DRAINS 清洁排放CDV CONDENSER DRAINS VESSEL 凝汽器疏水阀CENT CENTRAL 中央的CENTRIF CENTRIFUGAL 离心的CENTRIF CENTRIFUGE 离心分离机CEP MAIN CONDENSATE PUMP 主凝结水泵CEP CONDENSATE EXTRACTION PUMP 凝泵CEP MAIN CONDENSATE EXTRACTIONPUMP 主凝泵CF CONTROL FLUID 控制液体CG COLD GAS 冷燃气CH CHANGE 改变,变化CHAR CHARACTER 特征CHEM CHEMICAL 化学的CHG CHANGER 转换器CHGE CHARGE 电荷,充电CHGR CHARGER 充电器CHGR CHARGING 装料CHIM CHIMNEY 烟囱CHK CHECK 检查,核实CHLD CHILLED 冷冻的CHLOPL CHLORINATION PLANT 氯处理工厂CHLOR CHLORINE 氯CHLR CHILLER 冷却器CHMB CHAMBER 室,房间CHRST CHARACTERISTIC 特性,特征CI CONTROL INTERFACE 控制接点CIRC CIRCULATION 循环CIRC CIRCULATING 循环CIRC CIRCULATED (使)循环CJC COLD JUNCTION COMPENSATOR 低温补偿器CK CHOKE 阻塞,阻气门CL CLUTCH 离合器CLARFR CLARIFIER 澄清器CLC CLOSED LOOP CONTROL 闭环控制CLD COOLED 冷的,冷却的CLG COOLING 冷却,冷却的CLK CLOCK 时钟CLKW CLOCKWISE 顺时针方向CLN CLEAN 清洁的;清扫CLNG CLEANING 清洁CLNT COOLANT 冷冻剂CLR COOLER 冷却器CLS CLOSING 关闭的,结束的CLS CLOSE 关闭CLSD CLOSED 关闭的CLT COLLECTOR 收集器CLTG COLLECTION 收集,聚集CLTG COLLECTING 收集,聚集CMD COMMAND 要求CMP RM COMPUTER ROOM 计算机室CMPD COMPOUND 混合物;混合CMPNT COMPONENT 部件,成分CMPTR COMPUTER 计算机CNCL CANCEL 撤消,取消CND CONDUIT 管道,沟渠CNDCTR CONDUCTOR 领导者CNTNR CONTAINER 集装箱CNTOR CONTACTOR 电流接触器CNTR COUNTER 计算器CNTRWT COUNTERWEIGHT 平衡物,平衡力CO2 CARBON DIOXIDE 二氧化碳COAG COAGULANT 凝结剂COAL COAL 煤碳COEF COEFFICIENT 参数,系数COIL COIL 盘绕,卷COL COLUMN 柱子;列COLD COLD 冷的COM COMMON 公用的COMB COMBUSTION 燃烧COMBI COMBINED 联合的COMBI COMBINATION 联合COMM COMMISSIONING 调试COMMUN COMMUNICATION 联系,通信COMP COMPRESSION 压缩COMP COMPRESSED 压缩的COMPEN COMPENSATING 补偿,补助COMPEN COMPENSATION 补偿,赔偿COMPGR COMPENSOGRAPHCOMPL COMPLETE 完成;完整的COMPL COMPLETED 完整的COMPOR COMPENSATOR 补偿器COMPR COMPRESSOR 压缩机CON CONTACT 连接,接触CONCT CONCENTRIC 中心的CONCT CONCENTRATE 浓缩,集中COND CONDENSING 冷凝COND CONDENSATION 浓缩COND CONDENSATE 凝结水CONDG CONDITIONING 条件,工况CONDR CONDENSER 凝汽器CONDY CONDUCTIVITY 导电性CONN CONNECTION 连接CONN CONNECTOR 连接器CONST CONSTANT 常数,恒定的CONSU CONSUMPTION 消耗CONTIN CONTINUOUS 连续CONTR CONTRACT 接触CONTT CONTENT 内容CONV CONVERTING 转换CONV CONVERTER 转换器CONVY CONVEYER 输送带COORD COORDINATE 坐标COORD COORDINATION 协调,调和COR CORE 铁心CORR CORRECTOR 校正者,修正者CORR CORRECTED 修正的CORR CORRECTION 修正COS COSINE 余弦COV COVER 盖子,覆盖CP CIRCULATION PUMP 循环泵CPH CONDENSATE PREHEATER 凝结水预热器CPL COUPLER 联轴器CPL COUPLING 偶合,联结CPL COUPLE 连接,接合CPP CONDENSATE POLISHING PLANTCPU CENTRAL PROCESS UNIT 中央操作单元CR CONTROL ROOM 控制室CRG CARRIAGE 车架,车厢CRIT CRITICAL 重要的,关键的CRK CRANK 曲柄CRN CRANE 行车CRNMTR CHRONOMETER 计时器CRO OSCILLOGRAPH 示波器CROIL CRUDE OIL 原油CRP CONDENSATE RECIRCULATIONPUMP 凝结水再循环泵CRS COARSE 粗糙的CRSH CRUSHER 破碎机CRSN CORROSION 腐蚀CRSV CORROSIVE 腐蚀的;腐蚀剂CRSVR CROSS OVER 横渡CRTA CRITERIA 标准CRV CURVE 曲线CSG CASING 缸CST CONDENSATE STORAGE TANK 凝结水储存箱CSTG CASTING 铸造,铸件CT CURRENT TRANSFORMER 电流变压器CTCHR CATCHER 捕捉器(离合器) CTG COTANGENT 余切CTP CONDENSER TRANSFER PUMP 凝汽器输送泵CTP CONDENSATE TRANSFER PUMP 凝结水输送泵CTR CENTRE 中心,中央CTRL CONTROLLER 控制器CTRL CONTROL 控制CTRL-V CONTROL VALVE 控制阀CTWR COOLING TOWER 冷却塔CUB CUBICLE 柜,室CULV CULVERT 管路CUR CURRENT 电流CUT CUTTER 切割机CVRSN CONVERSION 转换CW COOLING WATER 冷却水CWP CIRCULATING WATER PUMP 循环水泵CWP MAIN COOLING WATER PUMP 主要冷却水泵CWPB CIRCULATING WATER PUMPBUILDING 循环水泵房CWPIP MAIN COOLING WATER PIPE 主要冷却水管CWPIP CIRCULATING WATER PIPE 循环水管道CY CYCLE 循环CYL CYLINDER 汽缸C/O CHANGE OVER 对调位置D DAY 天D-V DRAIN VALVE 疏水阀DA DEKADAMP DAMPER 挡板DAS DATA ACQUISITION SYSTEM 数据获取系统DAT DATE 日期DAT DATUM 数据DATA DATA 数据(复数)DB DECIBEL 分贝DBL DOUBLE 双的,两倍的DC DIRECT CURRENT 直流电DCPLG DECOUPLING 退耦(装置)DCT DUCT 输送管DE DRIVE END 驱动端DE-EX DE-EXCITATION 退激发DECARB DECARBONIZED 除去碳素的DECARB DECARBONATED 除去碳酸的DECR DECREASE 减少DEF DEFECTIVE 有缺陷的DEF DEFECT 过失,缺点DEFL DEFLECTION 偏差,偏斜DEFL DEFLECT 偏斜DEG DEGREE 度DEGAS DEGASING 除去瓦斯DEGC DEGREES CELSIUS 摄氏度DEGC CENTIGRADE 摄氏度的,百分度的DEGF DEGREE FAHRENHEIT 华氏温度DEHUMI DEHUMIDIFY 除湿DEION DEIONISER 脱离子剂DEL DELIVERY 交付DELE DELETE 删除DEMI DEMINERALISATION 除盐DEMI DEMINERALISING 去除矿物质DEMIN DEMINERALISED 除去矿物质的DEMIPL DEMINERALISATION PLANT 除盐水装置DENS DENSITY 密度DEP DEPRESSION 低压DEPHLEG DEPHLEGMATOR 精溜器DESAL DESALINATION 脱盐作用DESAL DESALINATE 除去盐份DET DETECTION 检测DET DETECTOR 检测器DETN DETERMINATION 决心DEV DEVIATION 偏差DEVI DEVICE 装置,设备DFG DRY FLUE GAS 干烟气DFM DEFOAMER 除泡沫DFT DRAIN FLASH TANK 排放疏水箱DFTR DEFLECTOR 变流装置DGASF DEGASIFIER 消除毒气剂DIA DIAMETER 直径DIAG DIAGONAL 对角线;斜的DIAGR DIAGRAM 图表DIAPH DIAPHRAGM 横隔膜,控光装置DIAPH-V DIAPHRAGM VALVE 隔膜阀DIEL DIELECTRIC 电介质,绝缘体DIFF DIFFERENTIAL 微分的DIFF DIFFERENCE 差别,差异DIFN DIFFUSION 扩散DIG DIGITAL 数字的DIL DILUTED 稀释的,冲淡的DILN DILUTION 稀释DIM DIMENSION 外形尺寸DIO DIODE 二极管DIR DIRECT 直接的,径直的DIREN DIRECTION 方向DIRN DIRECTION 方向DIS DISCHARGE 排放;放电DISCON DISCONNECTED 分离的DISCON DISCONNECTION 断开DISCON DISCONNECT 拆分,分离DISCON DISCONNECTING 拆开,解脱DISCR DISCREPANCY 矛盾,差异DISOLV DISSOLVING 毁灭性的DISOLV DISSOLVED 溶解,解散DISP DISPLACEMENT 置换,转移DISPA DISPATCHING 发货;派遣DISPL DISPLAY 显示;陈列DIST DISTANCE 距离,间隔DISTB DISTURBED 扰乱的DISTILL DISTILLATE 蒸馏物DISTOR DISTORTION 扭曲,变形DISTR DISTRIBUTOR 发行人DISTR DISTRIBUTING 分配,分发DISTR DISTRIBUTION 分配,分发DIV DIVIDE 划分,分开DIV DIVISION 分开,区分DIVR DIVERTER 分流调节器DK DESK 桌,台DL DIAL 刻度盘DLCONVY DRAG LINK CONVEYOR 刮板式传送器,链板传送器DLD/COAL-TAR-F DISTILLED COAL TAR FUEL 蒸馏煤焦油燃料DLY DAILY 每天的DMP DUMP 倾倒,倾泄DMY DUMMY 虚拟的;假货DO DIFFUSION OPERATIONDOC DOCUMENT 文件DOM DOMESTIC 国内的DOOR DOOR 门DOS DOSING 加药DOTTED/LR DOTTED LINE RECORD 打点的线式记录DP DIFFERENTIAL PRESSURE 压差DPOI DEW POINT 露点DPTH DEPTH 深度DR DRIER 干燥剂DRM DRUM 汽包DRN DRAIN 疏水DRO DROP 水滴,滴DRV DRIVEN 受到驱动的DRV DRIVE 驱动DRVR DRIVER 驱动器DRY DRY 干燥DSC DISC 盘DSC-V DISC VALVE 盘阀DSIDE DISCHARGE SIDE 排放侧DSL DIESEL 柴油DST DUST 灰尘DS/HTG DESUPERHEATING 减温DS/HTR DESUPERHEATER 减温器DT DIFFERENTIAL TEMPERATURE 温差DTY DUTY 职责DUP DUPLEX 双方的DUP DUPLICATE 复制的,副的,两倍的DURN DURATION 持续时间DWG DRAWING 图纸DWL DOWEL 木钉DWP DRAIN WATER PUMP 疏水泵DY DELAY 推迟DYN DYNAMIC 动态的,动力的DYNM DYNAMOMETER 功率计,动力计D/A DEAERATOR 除氧器D/AST DEAERATOR STORAGE TANK 除氧器储存箱D/STR DOWNSTREAM 下游E ELECTRIC 电子的E ELECTRICAL(LY) 电气的(地),电的E-T/HTG E-TRACE HEATING 电加热器ECCY ECCENTRICITY 离心率ECON ECONOMIZER 省煤器ECP ELECTRO CLORINATION PLANT 电子氯化装置EE ELECTRICAL END 电气端EFF EFFICIENCY 效率EFP ELECTRIC FEED PUMP 电子给水泵EFT EFFECT 效果,作用EFT EFFECTIVE 有效的EHC ELECTRO HYDRAULIC CONTROLLER 电液压控制器EHCV ELECTRO HYDRAULIC CONVERTER 电液压转换器EHG ELECTRO HYDRAULIC GOVERNOR 电液压调节器,电液压调速器EJEC EJECTION 喷出,排出物EJR EJECTOR 排除器ELAS ELASTICITY 弹性,弹力ELAS ELASTIC 弹性的ELCTD ELECTRODE 电极ELCTLT ELECTROLYTE 电解液,电解ELCTRN ELECTRON 电子ELEM ELEMENT 元素,元件ELEV ELEVATE 举起ELEV ELEVATION 海拔,正面图ELON ELONGATION 延长ELOP EMERGENCY LUB OIL PUMP 紧急润滑油泵ELT ELECTRONIC 电子的ELVTR ELEVATOR 升降机,电梯EM BRG O-PMP EMERGENCY BEARING OIL PUMP 紧急轴承油泵EMAG ELECTROMAGNETIC 电磁的EMC ENERGY MANAGEMENT CENTER 能源管理中心EMCFG ELECTRICAL MEASURINGCONFIGURATION 电气测量配置EMDG EMERGENCY DIESEL GENERATOR 紧急柴油发电机EMERGY EMERGENCY 紧急EMEXIT EMERGENCY EXIT 紧急出口EMTY EMPTY 空的ENAB ENABLING 使能够ENC ENCLOSE 围绕ENC ENCLOSURE 罩壳ENG ENGINE 发动机ENGY ENERGY 能量ENRGS ENERGISE 加强,给…电压ENRGS ENERGISED 通电的ENT ENTRANCE 入口ENT ENTRY 进入ENTH ENTHALPY 热函ENVRMT ENVIRONMENT(TAL) 环境(的)EOIL EMERGENCY OIL 紧急油EP EXTRACTION PUMP 抽气泵,排气泵EQL EQUALISER 均衡器,平衡装置EQL EQUALISING 平衡,补偿,调整EQL EQUALISE 使相等EQL EQUAL 相等的,等同的EQUIL EQUILIBRIUM 平衡,均衡EQUIP EQUIPMENT 设备EQUIV EQUIVALENT 相等的,等同的ERR ERROR 误差,错误ESC ESCAPE 逃脱;避免EST ESTIMATE(D) 评估,估计ESV EMERGENCY STOP VALVE 紧急关断阀ET EMERGENCY TRIP 紧急跳闸ETC ET CETERA 等等EVAC EVACUATION 排除,撤退EVAC EVACUATE 排泄,疏散EVAL EVALUATE 评价,估计EVAL EVALUATION 估价,评价EVAP EVAPORATION 蒸发EVAP EVAPORATOR 蒸发器,脱水器EX EXAMPLE 实例,例子EXAM EXAMINE 检查,调查EXAM EXAMINATION 检查,考试EXC EXCITATION 励磁EXCDD EXCEEDED 超越,超过EXCE EXCITER END 励磁机末端EXCH EXCHANGE 交换,调换EXCH EXCHANGER 交换器EXCL EXCLUDE 排除,除…以外EXCL EXCLUSION 排除,除外EXCSS EXCESS 超过,过度EXGU EXTINGUISHER 熄灭器,灭火器EXH EXHAUSTER 排气装置EXH EXHAUST 排气EXHD EXHAUST DUST 排气管道EXL EXTERNAL 外部的EXP EXPANSION 膨胀,扩充EXPLO EXPLOSION 爆炸EXR EXCITER 励磁机EXT EXTENSION 延长,扩展EXTI EXTINCTION 消失EXTN EXTRACTION 抽取,取出;萃取EXTR EXTRACTOR 抽汽器EXTRM EXTREME 特别的,极端的E/F EARTH FAULT 接地故障E/H ELECTRO HYDRAULIC 电液转换E/SW EARTHING SWITCH 接地开关F-B FEEDBACK 反馈F-C FLOW CONTROL 流量控制FAC FORCED AIR COOLING 强制空冷FACIL FACILITY 设施FAIL FAILED 出故障的,失败的FAIL FAILURE 故障FC FLUID COUPLING 液力联轴节FCD FORCED 强制的FCG FACING 保护面;镶边FD FORCED DRAFT 强迫通风FDLNE FEED LINEFDN FOUNDATION 基础FDPIP FEED PIPE 给水管FDR FEEDER 馈电线,传导线FEED FEED 送入FELD FIELD 现场,就地FELR FEELER 试探器FFW FIRE FIGHTING WATER 消防水FG FUEL GAS 可燃气体FGC FUNCTIONAL GROUP CONTROL 功能组控制FIG FIGURE 外形,轮廓FIGH FIGHTING 防止FIL FILLING 填充FIL FILL 填充FIR FIRE 火FIX FIXED 固定的FIX FIXING 固定,稳固FLD FLUID 液体FLEX FLEXIBLE 可变形的,柔韧性FLG FLANGE 法兰FLL FULL 满的FLM FLAME 火焰FLOC FLOCCULATION 絮凝,絮结产物FLOC FLOCCULATED 絮凝FLOC FLOCCULATORFLOW FLOW 流量FLP FLAP 薄片,口盖;振动FLR FILLER 漏斗FLSH FLASH 闪存FLT FAULT 故障FLTR FILTER 过滤器FLTY FAULTY 有故障的FLUGAS FLUE GAS 烟气FLUSH FLUSHING 清洗FLUSH FLUSH 冲洗FM FOAM 泡沫FN FAN 风扇FNL FINAL 最终的FO FUEL OIL 燃料油FORMA FORMATION 形成,构成FP FEED PUMP 给水泵FR FRONT 前面FRAC FRACTION 片段FREQ FREQUENCY 频率FRICT FRICTION 摩擦,摩擦力FRM FRAME 结构FS FUSE 保险丝FST FAST 迅速FSTNR FASTENER 扣件,纽扣,按钮FTOR FACTOR 因素,要素FU FUEL 燃料FULFLD FULFILLED 满足的,实现了的FUNCT FUNCTION 功能FUNCT FUNCTIONAL 功能的FUND FUNDAMENTAL 基础的,基本原则FURN FURNACE 炉子,熔炉FV FLASH VESSEL 闪蒸器FW FEED WATER 给水FWD FORWARD 向前的FWP FEEDWATER PUMP 给水泵FWT FEED WATER TANK 给水箱FXTR FIXTURE 固定设备,预定日期F/T FAULT/TRIP 故障/跳闸G GAGE 计量器G GAUGE 标准尺,量表GALV GALVANISE 电镀GALV GALVANIC 电流的,触电的GAS GAS 天然气GASF GASIFIER 气化器,气体发生器GAT GATE 大门GAT-V GATE VALVE 闸阀GBRG GEARBOX BEARING 变速箱轴承GD GRIDE 搽刮GDE GUIDE 领导,带领GDEVAN GUIDE VANE 导叶GEN GENERATOR 发电机GENBUS GENERATOR BUS 发电机母线GENE GENERATOR END 发电机末端GENL GENERAL 总的,概括的GFCHX GEN FORCED COOLING HEATEXCHANGER 发电机强冷热交换器GFCPP GENERATOR FORCED COOLINGPUMP 发电机强冷泵GL GLOBE 球体GLND GLAND 密封管GLS GLASS 玻璃GMTRY GEOMETRY 几何学GND GROUND 地面GOV GOVERNING 控制,管理GOV GOVERNOR 管理者GPH GRAPH 曲线图,图表GPH GRAPHIC 图解的GR GEAR 齿轮,传动装置GRA GRAPHITE 石墨GRAD GRADIENT 坡度,梯度GRAV GRAVEL 沙砾GRAVI GRAVITY 重力GRBXS GEAR BOX SIDE 齿轮箱侧GRD GRIND 磨,碾GRD GRINDING 磨的GRD GRINDER 磨工GRDTN GRADUATION 刻度,分等级GRP GROUP 组GRPG GROUPING 分组GRS GREASE 油脂GRT GROUTING 灌注浆GRT GROUT 水泥浆GRV GROOVE 凹槽GRVD GROOVED 开槽的GRWT GROSS WEIGHT 毛重GS GENERATOR SIDE 发电机侧GSA GENERAL SERVICE AIR 通用空气GSKT GASKET 垫圈GT GAS TURBINE 燃机GTB GAS TURBINE BUILDING 燃机房GTC GAS TURBINE CONTROLLER 燃机控制器GTE GRATE 炉GTG GAS TURBINE GENERATOR 燃机发电机GTY GANTRY 桶架GWH GIGAWATT-HOUR 十亿瓦特-小时GWTH GROWTH 生长,等比级数G/BOX GEARBOX 变速箱G/BOXS GEARBOX SIDE 变速箱侧H HIGH 高H-OIL HEAVY OIL 重油H2 HYDROGEN 氢气H2/S H2 SIDE 氢气侧HA HOT AIR 热空气HAS HARDWIRED ALARM SYSTEM 硬接线报警系统HD HEAD 头HD-O-DE HEAD OF DELIVERY 压力差HD-O-DE DELIVERY HEAD 水头,压力差HDL HANDLE 柄,把手;处理HDLG HANDLING 处理;操作的HDLS HEADLESS 无头的HDNS HARDNESS 硬度,难度HDR HEADER 连箱HDWHL HANDLWHEEL 手轮HEX HEXAGON 六角形,六边形HF-OIL HEAVY FUEL OIL 重燃油HG MERCURY 水银,汞HGT HEIGHT 高度HH HIGH HIGH 高高HK HOOK 钩HLDG HOLDING 持有HLDR HOLDER 支持物,固定器HLF HALF 一半HLL HALL 大厅HMNC HARMONIC 谐波;和谐的HNG HINGE 铰链HNG HINGED 装了铰链的HOG HOT GAS 热燃气HOL HOLLOW 洞,凹的HOR HORIZONTAL 水平的HOU HOUSE 房子,住宅HP HIGH PRESSURE 高压HPCP HIGH PRESSURE CIRCULATIONPUMP 高压循环泵HPFP HIGH PRESSURE FEED PUMP 高压给水泵HPPR HOPPER 储料器HPS HIGH PRESSURE STEAM 高压蒸汽HPT HIGH PRESSURE TURBINE 高压缸HRB HEAT RECOVERY BOILER 热回收锅炉HRSG HEAT RECOVERY STEAMGENERATOR 余热锅炉HS HEATING STEAM 热蒸汽HS-V HEAT STEAM VALVE 热蒸汽阀门HSG HOUSING 机架HSG-V HEAT STEAM GATE VALVE 热蒸汽闸阀HSPD HIGH SPEED 高速HST HOISTING 起重,提升HST HOIST 提升间HTEMP HIGH TEMPERATURE 高温HTG HEATING 加热HTN HIGH TENSION 高压HTR HEATER 加热器HUM HUMMING 发嗡嗡声(脉动、喘振)HUMID HUMIDITY 湿气,潮湿HUNT HUNTING 搜索HVDY HEAVY DUTY 重载,重型HVOLT HIGH VOLTAGE 高压HW HOTWELL 热井HX HEAT EXCHANGER 热交换器HYBR HYBRID 混合物HYD HYDRAULIC 液压的HYDR HYDRAZINE 联氨HYDRST HYDROSTATIC 静水利学的HYPO HYPOCHLORIC 次氯酸盐的H/A HAND/AUTO 手动/自动H/STEP HYDRASTEPI-V ISOLATING VALVE 隔离阀ID INDUCED DRAFT 进气通风IDC INDIVIDUAL DRIVE CONTROL 独立驱动控制IDFN INDUCED DRAUGHT FAN 进气引风机IDR INSIDE DIAMETER 内径IDX INDEX 指标IFO IN FRONT OF 在…之前IGN IGNITION 点火IGNTR IGNITOR 点火器IGV INLET GUIDE VANES 入口导页IMM IMMERSION 沉浸IMM IMMERSED 浸入的IMMED IMMEDIATE 直接的,紧接的IMP IMPULSE 推力IMPD IMPEDANCE 阻抗IMPLR IMPELLER 叶轮IMPT IMPACT 影响INBD INBOARD 在向内INC INCOMER 进来者INC INCOMING 引入的INCL INCLUSIVE 包含的,包括的INCLN INCLINE 倾斜,使倾向于INCLN INCLINATION 倾斜,倾向INCR INCREASE 增加,增大INCR INCREMENT 增加,增量IND INDICATOR 指示器IND INDICATION 指示,指出INDC INDUCTIVE 感应的INDC INDUCTION 感应,感应现象INDC INDUCTOR 感应器INDC INDUCED 导致的,感应的INDEP INDEPENDENT 独立的,不受约束的INDIV INDIVIDUAL 单独的INDR INDOOR 户内的INF INFINITE 无限的,无穷大INFD INFEED 横切INFL INFLOW 流入INFLL INFLAMMABLE 易燃的INFO INFORMATION 信息,资料INHER INHERENT 内在的,固有的INHIB INHIBITOR 抑制剂INIT INITIAL 初始的INIT INITIATION 开始INJ INJECTION 注射INL INLET 入口INP INPUT 输入INR INNER 内部的INRIA INERTIA 惯性,惯量INRT INERT 惰性的INR.B INNER BOTTOM 底部内侧INR.T INNER TOP 顶部内侧INS INSIDE 内部INSP INSPECTION 检查INSP INSPECT 检查INSRT INSERTED 插入的,附着的INSRT INSERTION 插入INSRT INSERT 插入,嵌入INST INSTANTANEOUS 瞬间的,即刻的INSTR INSTRUMENT 仪表,器具INSTR INSTRUMENTION 仪表INT INTEGRAL 完整的INT INTEGRATED 综合的,完整的INT INTEGRATION 综合INTCHG INTERCHANGEABLE 可互换的INTCHG INTERCHANGE 相互交换INTCLR INTERCOOLER 冷热气自动调节机INTCOM INTERCOMMUNICATION 交际INTCON INTERCONNECTING 互连INTCOV INTERCOVER 相互包含INTCPT INTERCEPT 截取INTCPT INTERCEPTOR 拦截机,截击机INTEN INTENSITY 强度,烈度INTFER INTERFERENCE 干扰,干涉INTGTR INTEGRATOR 综合者INTK INTAKE 入口,进口INTL INTERNAL 内在的INTM INTERMEDIATE 中间的INTPOS INTERPOSING 提出INTR INTERIOR 内部的INTRPT INTERRUPTION 中断INTRPT INTERRUPTING 中断的INTRPT INTERRUPT 打断,中断INTSCT INTERSECT 交叉INTSCT INTERSECTION 交叉点,交集INTST INTERSTAGE 级间的,级际的INTTRN INTERTURN 匝间的INV INVERTED 反向的INV INVERTER 变极器,反用换流器INVS INVERSE 反转的,倒转的ION ION 离子IPD ISOLATED PHASE BUSDUCT 隔离相母线管IR INFRA-RED 红外线IRREG IRREGULAR 不规则的ISEN ISENTROPIC 等熵的ISOL ISOLATING 绝缘的ISOLR ISOLATOR 绝缘体,隔音装置I&C INSTRUMENTATION AND CONTROL 仪器和控制I/F INTERFACE 接口I/L INTERLOCKING 联锁的I/L INTERLOCK 互锁I/MIT INTERMITTENT 间歇的JAMG JAMMING 干扰台JB JUNCTION BOX 接线盒JKT JACKET 护套JN JOIN 连接,连接点JNL JOURNAL 轴颈;日志,期刊JOG JOGGLE 啮合,啮合扣JT JOINT 接头,连接点JTY JETTY 码头JUNCT JUNCTION 接合,交叉点KBD KEYBOARD 键盘Key KeyDescription1 主要描述1 KEYSW KEY SWITCH 主要开关KPL KICKPLATE 踢板L LEVEL 水平,水平面L-C LEVEL- CONTROL 水平控制L-O LOCK OUT 锁住;把……关在外面LAB LABORATORY 实验室LAD LADDER 梯子LAG LAGGING 绝缘层材料LAGN LAGOON 环礁湖LATL LATERAL 侧面的LBL LABLE 标签LBR LUMBER 木材LBYR LABYRINTH 迷宫LCH LATCH 闭锁;门插销LCL LOCAL 当地的LCR LOCAL CONTROL ROOM 就地控制室LDG LOADING 装载LDS LEAD(S) 引导LEAKG LEAKAGE 泄露LFT LEFT 左侧的LG LENGTH 长度LGC LOGIC 逻辑LGE LARGE 巨大LGR LOGGER 运机;伐木工LGR LOGGING 采伐LH LEFT HAND 左手LHB LEFT HAND BOTTOM 左手底端LHT LEFT HAND TOP 左手顶部LIFT JACKINGLIFT LIFTING 起重LIN LINEAR 直线的LIOP JACKING OIL PUMP 顶轴油泵LIOP LIFTING OIL PUMP 提升油泵LIQ LIQUID 液体LIT LIGHT 轻的LITG LIGHTING 照明LITNG LIGHTNING 闪电LJUSTRM LJUNGSTROEM 辐流式LK LEAKING 泄露LK LEAK 泄露LKGE LINKAGE 联接LL LOW LEVEL 低位LLD LOW LOAD 低负荷LM LUMEN 流明LME LIME 石灰LMT LIMIT 限制,有限的LMT LIMITING 限制的LMT LIMITATION 限制,局限性LMTM LIMIT MONITOR 有限监控器LMTR LIMITER 限制器LNE LINE 线路LNG LONG 长LNGT LONG TIME 长时间LO LUBRICATING OIL 润滑油LOAD LOAD 荷载LOC LUBRICATING OIL COOLER 润滑油冷却器LOCK LOCKER 琐扣装置LONG LONGITUDINAL 纵向的LOP LUBE OIL PUMP 润滑油泵LOT LUBE OIL TANK 润滑油箱LOUV LOUVRE 天窗LOW LOW 低的LP LOW PRESSURE 低压LPCP LOW PRESSURE CIRCULATINGPUMP 低压循环泵LPFP LOW PRESSURE FEED PUMP 低压给水泵LPIP LOOP PIPE 回路管道LPS LOW PRESSURE STEAM 低压蒸汽LSPD LOW SPEED 低速LSS LOSS 损耗LT LAMP TEST 照明试验LUB LUBRICANT 润滑剂LUB LUBRICATING 润滑的LUB LUBRICATION 润滑油LUB CH LUBRICANT CHANGE 润滑剂变化LUM LUMINOUS 发光的LV LOW VOLTAGE 低压LVAC LOW VACUUM 低真空LVE LIVE 活的LVOLT LOW VOLTAGE 低压LWR LOWER 更低的LWRG LOWERING 降低的L/O LEAK-OFF 泄露M-V MODULATING VALVE 调幅阀MACH MACHINE 机械MAG MAGNETIC 磁的MAG MAGNET 磁铁MAGTD MAGNITUDE 数量,巨大MAIN MAIN 主要的MALF MALFUNCTION 故障MAN MANUALLY 手动地MAN MANUAL 手动,手册MANO MANOMETRIC 压力计的MANO MANOMETER 压力计MARG MARGIN 余量MARSG MARSHALLING 编组的MAX MAXIMUM 最大值MC MECHANICAL CONFIGURATION 机械配置MCB MINIATURE CIRCUIT BREAKER 微型断路器MCC MOTOR CONTROL CENTER 电机控制中心MCD MODULE CONTROL DESK 模块控制台MCP MODULE CONTROL PANEL 模块控制面板MCR MAXIMUM CONTINUOUS RATING 最大连续功率MDE MODE 模式MDE-O-DR MODE OF DRIVING 驱动模式MDE-O-OPR MODE OF OPERATION 运行模式MDN MEDIAN 中央的MEAS MEASURES 测量;措施MEAS MEASURING 测量MEAS MEASUREMENT 测量MECH MECHANICAL 机械的MED MEDIUM 中间的MET METERING 测量MF MINIMUM FLOW 最小流量MFC MINIMUM FLOW CONTROL 最小流量控制MFL MINIMUM FLOW LINE 最小流量线MFLD MANIFOLD 复印本MIC MICRO 微型的MID MIDDLE 中间MIN MINIMUM 最小值MINI MINIATURE 缩图;缩小的MISC MISCELLANEOUS 杂项ML MILL 工厂,压榨机MLOP MAIN LUBRICATING OIL PUMP 主要润滑油泵MLOT MAIN LUBRICATING OIL TANK 主要润滑油箱MOB MOBILE 可移动的MOD MODULE 模块MODG MODULATING 调整MODG-D MODULATING DAMPER 调节档板MODI MODIFIED 改进的MODI MODIFICATION 修改MODI MODIFY 修改MOIS MOISTURE 潮湿MOISG MOISTENING 润湿MON MONITORING 监控MON MONITOR 监控器MPSW MEASURING POINT SELECTORSWITCH 测量点选取开关MS MAIN STEAM 主蒸汽MSTR MASTER 主要的MTL METAL 金属MTN MOTION 动作MTR MOTOR 电动机MTY MULTY 多个MULT MULTIPLE 多样的MVBL MOVABLE 活动的MVG MOVING 移动MVT MOVEMENT 运动,移动MXD MIXED 混合,混合的MXG MIXING 混合MXT MIXTURE 混合物M/U MAKE-UP 补充N-COIN NON-COINCIDENCE 不一致NAOH CAUSTIC SODA 苛性钠NAR NARROW 狭窄的NAT NATURAL 自然的NB NOMINAL BORE 公称管径NBR NUMBER 数字ND NOMINAL DIAMETER 标称直径NDE NON-DRIVING END 非驱动端NDL NEEDLE 针NEC NECESSARY 必要的NEG NEGATIVE 负的,否定的NEUT NEUTRAL 中性的NEUTRALN NEUTRALISATION 中和,平衡NG NATURAL GAS 天然气NIP NIPPLE 螺纹接头;滑油嘴NLTC NO-LOAD TAP CHANGER 不带负荷的抽头变换器NO2 NITROGEN - DIOXIDE 二氧化氮NOM NOMINAL 名义上的NORM NORMAL 正常的,常规的NOT NOT 否NOX NITROGEN OXIDE 氮氧化物NOZ NOZZLE 喷嘴NP NOMINAL PRESSURE 标称压力NPSH NET POSITIVE SUCTION HEAD 净正吸入压头NR NON-RETURN 逆止的,止回的NRF NON-RETURN FLAP 止回口盖NRV NON-RETURN VALVE 止回阀NTH NORTH 北方的PL NOT COMPLETE 不完全的N.ON NOT ON 未启动N.OPEN NOT OPEN 未打开N.REGEN NOT REGENERATING 非再生的N/C NORMALLY CLOSED 正常关闭N/O NORMALLY OPEN 正常打开O-CLR OIL COOLER 油冷却器O-CP OIL COLLECTING PIT 油聚集坑O-PMP OIL PUMP 油泵O-TNK OIL TANK 油箱O-TRN OIL TURNERO-WST OILY WASTE 含油废物O2 OXYGEN 氧OA OVERALL 全部的,全面的OBL OBLIGATORY 必须的OCC OCCUPIED 占用OCC OCCUPATION 占有OD OUTSIDE DIAMETER 外径OFLTC OFF-LOAD TAP CHANGER 卸载抽头转换器OIL OIL 油OLC OPEN LOOP CONTROL 开环控制OLTC ON-LOAD TAP CHANGER 装载抽头转换器OP OPERATING 运行的OP OPERATION 运行OPERD OPERATED 运行的OPN OPEN 打开OPNG OPENING 开始的OPP OPPOSITE 相反的,对立的OPRL OPERATIONAL 运作的OPT OPTICAL 光学的OPTR OPERATOR 操作员ORD ORDER 次序;订购ORF ORIFICE 孔,口ORIG ORIGIN 起源ORIG ORIGINAL 原始的,最初的OSC OSCILLATOR 振荡器OSC OSCILLATE 振荡OSCGRM OSCILLOGRAM 示波器OT OUTLET TEMPERATURE 出口温度OTC OUTLET TEMPERATURECALCULATED 计算的出口温度OUT OUTLET 出口OUT OUTSIDE 外部的OUTDR OUTDOOR 户外OUTGG OUTGOING 输出的OUTR OUTER 外部OUTR.B OUTER BOTTOM 外底部OUTR.T OUTER TOP 外顶端OV OVER 超过OVAP OIL VAPOR EXTRACTOR 油蒸汽抽出器OVEREXC OVEREXCITATION 过激励OVTR OVERTRAVEL 超行程O/C OVERCURRENT 过电流O/C-S/C OVERCURRENT SHORT CIRCUIT 过电流短路O/FL OVERFLOW 溢出O/L OVERLOAD 超负荷O/P OUTPUT 出力,输出O/S OVERSPEED 超速P-BLOW PRESSURE BLOW 压力吹气P-C PRESSURE CONTROL 压力控制P-GRAD PRESSURE GRADIENT 压力梯度P-RATIO PRESSURE RATIO 压比P-V PILOT VALVE 控制阀PA PRIMARY AIR 初始空气PABL PRIMARY AIR BLOWER 初始鼓风机PACK PACKAGE 包PAF PRIMARY AIR FAN 主要换气扇PANT PANTOGRAPH 缩放仪PART PARTICLE 粒子,微粒PASS PASSAGE 通道PB PUSHBUTTON 按钮PC PRINTED CIRCUIT 印制电路PCB PRINTED CIRCUIT BOARD 印制电路板PCC POWER CONTROL CENTER 电源控制中心PCE PIECE 块,件PD POND 池子PDSC POWER DISPATCH SYSTEM CENTER 配电系统中心PED PEDESTAL 基架,底座PEN PENETRATION 渗透PERD PERIODIC 定期的PERM PERMANENT 永久的,持久的PERMB PERMIABILITYPERP PERPENDICULAR 垂直的,垂线PF POWER FACTOR 功率因素PFE PROFILE 侧面,剖面PFL PULFERISED FUELPFM POWER FACTOR METER 功率因素测量计PG PURGE GAS 吹扫用的气体PGMT PIGMENT 色素PH PHASE 相,阶段PH-R PHASE R R相PH-S PHASE S S相PH-T PHASE T T相PHOS PHOSPHATE 磷酸盐PIP PIPING 管道PIP PIPE 管道PIP PIPELINE 管线PIST PISTON 活塞PIT PIT 坑PK PEAK 峰值PKT POCKET 口袋PL PLUNGER 活塞PLA PLATE 金属板PLATF PLATFORM 平台PLC PLACE 地方PLE POLE 柱;电极PLG PLUG 塞子;插入PLG-IN PLUG-IN 插入PLR PILLAR 柱子PLRTY POLARITY 极性PLS PULSE 脉冲PLSG PULSATING 跳动的PLT PILOT 导杆,控制器;导航员PLTG PLATING 电镀PM PERMANENT MAGNET 永久磁铁PMP PUMP 泵PNEU PNEUMATIC 汽动PNL PANEL 面板,盘PNT POINT 点PO PREMIX OPERATION 预混合运行POL POLISHING 磨光,抛光POLPHOSPH POLYPHOSPHATE 多磷酸盐PORT PORTABLE 手提的,轻便的POS POSITIVE 正的,正极的POSN POSITION 位置POSNR POSITIONER 远程位置调节器POSS POSSIBLE 可能的POT DRINKING 喝POT POTABLE 饮料POTI POTENTIAL 潜在的;电压POTI POTENTIOMETER 电位计,分压计PR PAIR 一对PRB PROBE 探针,探测器PRCN PRECISION 精确度PRECIP PRECIPITATOR 沉淀剂PRECT PRECOAT 滤料层PREM PREMIX 预混合料PREP PREPARED 准备好的PREP PREPARATION 准备PRES PRESSURE 压力PRF PROOF 防……的,有耐力的PRFM PERFORMANCE 性能PRGG PURGING 清洗PRGM PROGRAM 程序PRI PRIMARY 主要的,初始的PRMG PRIMING 雷管,底漆PRMTR PARAMETER 参数PROBY PROBABILITY 可能性PROC PROCESSOR 处理机PROC PROCESSING 处理PROC PROCESS 过程PROJ PROJECT 项目PROPN PROPORTION 比例PROPN PROPORTIONAL 成比例的,想称的PROT PROTECTION 保护PROT PROTECTING 保护PROT PROTECTIVE 保护的PRSD PRESSED 加压的,压制的PRT PART 部分PRT PARTIAL 部分的,局部的PRTR PRINTER 打印机PS PUMP SIDE 泵侧PSIG PRESSURE ABOVE ATMOSPHERE 高于大气压力PSS POWER SYSTEM STABILISER 电力系统稳定器PT PLANT 电厂PTN PARTITION 划分,区分PUB PUBLIC 公共的PUL PULL 拖,拉PULV PULFERISERPULV PULFERISEDPULV PULFERISINGPULY PULLEY 滑车,滑轮PUR PURITY 纯度PURIF PURIFICATION 净化PURIF PURIFIER 清洁器PW PRIMARY WATER 初级水PWDR POWDER 粉末PWR POWER 功率,电P/HTR PREHEATER 预热器QCK QUICK 迅速的QTC QUARTZ (CRYSTAL) 石英(晶体)QTR QUARTER 四分之一QTY QUANTITY 数量R RIGHT 右;正确R-V REGULATING VALVE 调节阀RA RATE 比率;等级RAD RADIAL 半径的;光线RADN RADIATION 辐射,发散RAP RAPPING 轻击修光(锻造中)RAW RAW 原始的RC REINFORCED CONCRETE 钢筋混凝土RCPT RECEIPT 收据;收到RCTN REACTION 反应RCV RECEIVED 收到的RCV RECEIVING 接受的RCVR RECEIVER 接受者,接收器RCVY RECOVERY 恢复,回收RDCN REDUCTION 减少RDDCY REDUNDANCY 冗余RDY READY 有准备的RE REFRACTORY 难控制的REAC REACTANCE 电抗REAC REACTOR 反应堆REACT REACTIVATION 再生,再激活REACT REACTIVE 反应的;电抗性的REC RECORDING 记录的REC RECORDER 记录器RECIP RECIPROCATE 互给,互换RECLMR RECLAIMER 回收程序RECLR RECOOLER 再冷却器RECT RECTIFIER 整流器RECTA RECTANGULAR 矩形的RECTA RECTANGLE 矩形RED REDUCING 减少RED REDUCE 减少RED REDUCER 减压器;还原剂REDU REDUCTING 还原REF REFERENCE 参考,涉及REFGT REFRIGERANT 制冷的;制冷剂REFL REFLECTOR 反射镜REFRD REFRIGERATED 冷冻的,冷却的REG REGULATING 调节REG REGULATOR 调整器REG REGULATE 调节REGEN REGENERATING 再生的REGEN REGENERATION 再生REGR REGENERATOR 再生器REGST REGISTER 记录,登记REGST REGISTRATION 注册,登记REHT REHEAT 再热REHTR REHEATER 再热器REJ REJECTION 拒绝REL RELATIVE 相关的RELBL RELIABILITY 可靠性RELBL RELIABLE 可靠的RELS RELEASE 释放,免除REM REMOTE 远方的,遥远的REMA REMOTE ACTUATION 远方执行REMV REMOVE 移动,迁移REMV REMOVABLE 抽取式的,可移动的REMV REMOVAL 移动,切除RES RESISTOR 电阻器RES RESISTANCE 电阻,阻抗RES RESISTANT 抵抗的RESDL RESIDUAL 剩余的,残留的RESOLN RESOLUTION 决定,决议RESTRIC RESTRICTED 有限的RETN RETURN 返回RETRAC RETRACTED 取消的RETRAC RETRACTABLE 可收回的REV REVISION 修订REV REVICE 修订REVO REVOLUTION 旋转;革命REW REVIEW 回顾,评论RF RAISED FACE (FLANGE) 光滑式密封面(法兰)RFO READY FOR OPERATION 准备运行RGD RIGID 刚性的RGH ROUGH 粗略的RH RIGHT HAND 后手RHB RIGHT HAND BOTTOM 右手底部。

燃机英语词汇

燃机英语词汇

燃机英语词汇(英汉)检索手册3WN three winding 三绕组A alarm 报警AB auxiliary boiler 辅助锅炉ABN abnormal 异常的ABS absolute 绝对的ABSBR absorber 吸收体(器),减震器ABT about 大约ABV above 超过,在……之上AC alternating current 交流电ACB air circuit breaker 空气断路器ACC air cooled condenser 空气冷却式冷凝器ACCES accessory 附加ACCL acceleration 加速(度)ACCP air cooled condensing plant 空气冷却式冷凝装置ACCUM accumulator 蓄能器ACD acid 酸ACKN acknowledge 确认ACS access 检修孔(门)ACT actual 实际的ACTD actuated 致动的ACTG acting 作用的ACTIV activated 激发的,触发的ACTN action 动作ACTR actuator 致动器,执行机构ACW auxiliary cooling water 辅助冷却水AC/O automatic change over 自动切换AD anode 阳极ADD additional 附加的,补充的ADJ adjusting 调整ADMN admission 进气ADPTR adapter 结合器,异径接头,适配器ADR address 地址ADS absorber 吸附器ADV advance 前进,超前AFT after (在)后面AGG aggregate 聚合AGIT agitator 搅拌器AGT agent (试,媒,作用)剂,介质AHD ahead 在前面AIR air 空气AIR-V air valve 空气阀ALKALTY alkalinity 碱度ALLOW allowance 容差ALTRN alternation 交流发电机AMB ambient 环境的AMM ammeter 安培计AMNA ammonia 氨AMPL amplifier 放大器AMPTD amplitude 振幅AN anion 阴离子ANAL analyzer 分析器ANLG analog 模拟ANN annunciator 信号报警器ANN-LAMPA annunciator lamp alarm 信号(报警)器,灯光报警器ANT-FM anti-foam 消泡剂ANX annex 附件(录)APPAR apparatus 装置,设备ARBLT air blast 鼓风ARCT air collecting tank 空气收集罐ARHTR air heater 空气加热器ARR arrestor 避雷器,制动器ASH ash 灰分ASMOISP ash moistening pump 灰分增湿泵ASSY assembly 装配,组件ATM atmospheric 大气的ATMZR atomizer 雾化器ATP attemperator 温度控制器ATT automatic turbine tester 自动涡轮测试装置AUD audible 音响的,可听的AUTO automatic 自动的AUX auxiliary 辅助的AUXVOLT auxiliary voltage 辅助电压A V AIL available 可得到的A VE average 平均A VR automatic voltage regulator 自动电压调节器AX axial 轴向的AXS axis 轴线A/S air side 空气侧B-LOAD base load 基本负荷BACKW backwash 反冲洗BAL balance 平衡BAR/GR barring gear 盘车装置BAS basin 水槽(池)BA TT battery 电池BB bus bar 母线BBOX black box 黑盒BC binary control 二元控制BEF before 在……前面BEH behind 在……后面BF boiler feed 锅炉给水BHOU boiler house 锅炉房BIN binary 二元的,二进制的BIOSY biocide generation system 杀虫剂产生系统BLD blade 叶片BLI blinking 闪光BLK blocking 阻塞BLO block 程序块,单元,阻塞BLR boiler 锅炉BLRCLD boiler cladding 锅炉护板BLWR blower 鼓风机BNDL bundle 管束BNK bank (数据)库,管箱BOT bottle 瓶(钢瓶)BOX box 盒BP booster pump 增压泵BPT booster pump turbine 增压泵涡轮BR barrel 筒体BRCH branch 分支BRD board 板BRDG bridge 电桥BRG bearing 轴承BRK breaking 断路BRKR breaker 断路器BRN brine 盐水BS-V boiler stop valve 锅炉关断阀BSDG black start diesel generator 黑启动柴油(机)发电机BSHG bushing 衬套BSTM bled steam 抽汽BSTM-V bled steam valve 抽汽阀BSTR booster 增压器BTM bottom 底部BTTN button 按钮BTWN between 在……之间BUCHZ buchholz 布兹霍尔茨BUF buffer 缓冲器BUI building 建造,建筑物BURN burner 燃烧器BUSDCT busduct 母线管BUT-V butterfly valve 蝶阀BW balance water 补给水B/D blow down 排污B/P bypass 旁通B/PI-V bypass isolating valve 旁通隔离阀B/UP back up 备用C-C combustion chamber 燃烧室C-CL combustion chamber left 左燃烧室C-CR combustion chamber right 右燃烧室CA cold air 冷空气CAB cabinet 柜,小间CAG cage 机架,笼,罩,盒CAL calibration 校准CALC calculation 计算CAN canal 槽(波,信)道CAND candle 火花塞,烛光(光强度单位)CAP capacitor 电容器CAPY Capacity 容量CARB carbon 碳CARR carrying 承载的CARW A car washing area 车辆清洗区CA T cation 阳离子CA TH cathode 阴极CA TY catalyzer 催化剂CB circuit breaker 断路器CBD continuous blow down 连续排污CBL cable 电缆CBO compressor blow-off 压气机放气CC combined cycle 联合循环CCEP condensate collecting tank extraction pumps 冷凝水收集罐排出泵CCP combined cycle process 联合循环工艺CCPP combined cycle power plant 联合循环电站CCR central control room 中央控制室CCT circuit 电路CCW closed-circuit cooling water 闭式冷却水CCWHX closed cooling water heat exchanger 闭式冷却水热交换电器CCWP closed cooling water pump 闭式冷却水泵CD clean drains 清洗排放CDV condenser drains vessel 冷凝器冷凝水室CENT central 中央的CENTRIF centrifuge 离心机CEP main condensate extraction pump 主冷凝水排出泵CF control fluid 控制流体CG cold gas 冷气体CH change 变化CHAR character 特性CHEM chemical 化学的CHG changer 变换器CHGE charge 装料,充电CHGR charging 装料,充电CHIM chimney 烟囱CHK check 检查CHLD chilled 被冷却的CHLOPL chlorination plant 氯化处理装置CHLOR chlorine 氯气CHLR chiller 深冷器CHMB chamber 小室CHRST characteristic 特性CI control interface 控制接口CIRC circulated 循环的CJC cold junction compensator 冷端接合补偿器CK choke 阻塞CL clutch 离合器CLARFR clarifier 澄清器CLC closed loop control 闭环控制CLD cooled 被冷却的CLG cooling 冷却CLK clock 时钟CLKW clockwise 顺时针方向的CLN clean 清洁,清洁的CLNG cleaning 清洗CLNT coolant 冷却剂CLR cooler 冷却器CLS close 关闭CLSD closed 闭合的,关闭的CLT collector 收集器CLTG collecting 收集的CMD command 指令CMP RM computer room 计算机室CMPD compound 复合的,化合物CMPNT component 部件CMPTR computer 计算机CNCL cancel 取消CND conduit 导管,线管CNDCTR conductor 导体CNTNR container 容器CNTOR contactor 接触器CNTR counter 计数器CNTRWT counterweight 用配重平衡,抵消CO2 carbon dioxide 二氧化碳COAG coagulant 凝结剂,絮凝剂COAL coal 煤COEF coefficient 系数COIL coil 线圈COL column 柱,列COLD cold 冷的COM common 普通的,公共的COMB combustion 燃烧COMBI combination 组合,化合COMM commissioning 调试COMMUN communication 通讯COMP compressed 压缩的COMPEN compensation 补偿COMPGR Compensation graph 补偿曲线COMPL completed 完成的COMPOR compensator 补偿器,膨胀接头COMPR compressor 压气机CON contact 接触,触点CONCT concentrate 集中,浓缩物COND condensate 冷凝液,冷凝水CONDG conditioning 调节CONDR condenser 冷凝器CONDY conductivity 传导率,导电率CONN connector 连接器,接头CONST constant 常数,恒定的CONSU consumption 消耗,损耗CONTIN continuous 连续的CONTR contract 收缩,合同CONTT content 内容CONV converter 转换器CONVY conveyor 输送机COORD coordination 调整,组织,协调COR core 核心,铁芯,芯线CORR correction 校正COS cosine 余弦COV cover 盖,罩CP circulation pump 循环泵CPH condensate pre heater 凝水预热器CPL couple 联接器CPP condensate polishing plant 冷凝水洁净装置CPU central process unit 中央处理机CR control room 控制室CRG carriage 支架,滑架CRIT critical 临界的CRK crank 曲轴,手摇柄CRN crane 起重机CRNMTR chronometer 记时计CRO oscillorgaph 示波器CROIL crude oil 原油CRP condensate recirculation pump 冷凝水再循环泵CRS coarse 粗的,未加工的CRSH crusher 破碎机CRSN corrosion 腐蚀CRSV corrosive 腐蚀的CRSVR cross over 相交,间距CRTA criteria 标准,准则,判据CRV curve 曲线CSG casing 机匣CST condensate storage tank 冷凝水储存罐CSTG casting 铸件,铸造CT current transformer 电流互感器,变流器CTCHR catcher 收集器,除尘器CTG cotangent 余切CTP current transformer pump 凝水输送泵CTR center 中心CTRL control 控制CTRL-V control valve 控制阀CTWR cooling tower 冷却塔CUB cubicle 开关柜,小室CULV culvert 电缆管道,下水道CUR current 电流,现在的CUT cutter 刃具,割嘴CVRSN conversion 转换,换算CW cooling water 冷却水CWP main cooling water pump 主冷却水泵CWPB circulating water pump building 循环水泵室CWPIP circulating water pipe 循环水管道CY cycle 循环,周期CYL cylinder 气缸C/O change over 转换,切换D day 天D-V drain valve 排放阀DA deka 十(词头)DAMP damper 挡板,阻尼器DAS data acquisition system 数据采集系统DA T datum 数据,资料DATA data 数据,资料DB decibel 分贝DBL double 两倍的,双联的DC direct current 直流电DCPLG decoupling 去藕DCT duct 导管DE drive end 驱动端DE-EX de-excitation 去激励,灭磁DECARB decarbonated 除去二氧化碳,除去碳酸DECR decrease 减少DEF defect 故障,缺陷DEFL deflect 偏转,转折,挠曲DEG degree 度DEAERATE deaerate 脱气,去氧DEGC centigrade 摄氏温度DEGF degree fahrenheit 华氏温度DEHUMI dehumidify 去湿,干燥DEION deioniser 脱离子剂DEL delivery 交付,输送DELE delete 删去DEMI demineralisinag 去矿化,除盐DEMIN demineralised 去矿化的,除盐的DEMIPL demineralisation plant 除盐装置DENS density 密度DEP depression 降低,抑制DEPHLEG dephlegmator 分馏器,蒸馏塔DESAL desalinate 脱盐DET detector 探测器DETN determination 确定,定义DEV deviation 偏差,偏离DEVI device 装置,元件DFG dry flue gas 干烟气DFM defoamer 消泡剂DFT drain flash tank 疏水膨胀箱DFTR deflector 偏转板,折流板DGASF degasifier 脱气器DIA diameter 直径DIAG diagonal 对角线,对角的,斜撑DIAGR diagram 图DIAPH diaphragm 隔膜,隔板,膜片DIAPH-V diaphragm valve 隔膜阀DIEL dielectric 不导电的,介电的DIFF difference 差别DIFN diffusion 扩散,扩压DIG digital 数字的,指状的DIL diluted 稀释的DILN dilution 稀释DIM dimension 尺地,量钢,维DIO diode 二极管DIR direct 直接的DIREN direction 方向DIRN direction 方向DIS discharge 放电,排放DISCON disconnecting 拆开,断路DISCR discrepancy 离散,偏差DISOLV dissolved 溶解的DISP displacement 位移,排量DISPA dispatching 发送,装运DISPL display 显示DIST distance 距离DISTB disturbed 扰动的DISTILL distillate 蒸馏,馏份DISTOR distortion 变形,畸变,失真DISTR distribution 分布,分配DIV division 区分,除(法),部门DIVR diverter 分流器,分流电阻,换向器DK desk 试验台,面板DL dial 标度盘,千分表DLCONVY drag link conveyor 牵引杆输送机DLD/COAL 蒸馏的煤焦油燃料TAR-FDL Y daily 每日的,日用的DMP dump 库房,卸料DMY dummy (实体)模型,平衡活塞DO diffusion operation 扩散燃烧运行DOC document 文件,资料DOM domestic 国内的DOOR door 门DOS dosing 加药DOTTED/LR dotted line record 虚线记录DP differential pressure 压差DPOI dew point 露点(温度)DPTH depth 深度DR drier 干燥器DRM drum 锅筒,转鼓DRN drain 排放,冷凝水DRO drop 液滴,降低DRV drive 驱动,传动装置DRVR driver 司机,主动轮DRY dry 干的DSC disc 轮盘DSC-V disc valve 片状阀DSIDE discharge side 放电侧,排放侧DSL diesel 柴油DST dust 烟尘DS/HTG de-superheating (给过热蒸汽)降温DS/HTR de-superheater 过热(蒸汽)减温器DT differential temperature 温差DTY duty 职责,负载DUP duplicate 复制,加倍,双联的DURN duration 持续时间,工作时间DWG drawing 图纸DWL dowel 榫销,定位销DWP drain water pump 疏水泵DY delay 滞后,迟延DYN dynamic 动力学的,动态的DYNM dynamometer 测力计,测功器D/A deaerator 除氧器D/AST deaerator storage tank 除氧水箱D/STR downstream 下游的E electrical(ly) 电气的E-T/HTG e-trace heating 电伴热ECCY eccentricity 偏心率ECON economizer 经济器,省煤器ECP electro clorination plant 电氯化处理装置EE electrical end 发电端,电气端EFF efficiency 效率EFP electric feed pump 电动给水泵EFT effective 有效的,现行的EHC electro hydraulic controller 电动-液压控制器EHCV electro hydraulic converter 电动-液压控制器EHG electro hydraulic governor 电动-液压调速器EJEC ejection 喷射EJR ejector 喷射器,射流抽气泵ELAS elastic 弹性的ELCTD electrode 电极,电焊条ELCTLT electrolyte 电解溶液,电解质ELCTRN electron 电子ELEM element 元素,部件ELEV elevation 提升,海拔标高ELON elongation 拉长,延伸率ELOP emergency lube oil pump 应急润滑油泵ELT electronic 电子的ELVTR elevator 升降机,电梯EM BRG O-PMP emergency bearing oil pump 应急轴承润滑油泵EMAG electro-magentic 电磁的EMC energy management center 能源管理中心EMCFG electrical measuring configuration 电测配置EMDG emergency diesel generator 应急柴油(机)发电机EMERGY emergency 紧急情况EMEXIT emergency exit 紧急出口EMTY empty 空的,皮重ENAB enabling 使……能ENC enclosure 箱装体,外壳ENG engine 发动机ENGY energy 能量ENRGS energized 激发的,通以电流ENT entry 入口ENTH enthalpy 焓ENVRMT environment(tal) 环境(的)EOIL emergency oil 应急油EP extraction pump 抽气(液)泵EQL equal 相等的EQUIL equilibrium 平衡EQUIP equipment 设备EQUIV equivalent 等效的,当量的ERR error 误差,错误ESC escape 逸出,漏出EST estimate(d) 估算(的),预测(的) ESV emergency stop valve 紧急关断阀ET emergency trip 紧急跳闸ETC et cetera 其他种种EV AC evacuate 抽空,排空EV AL evacuation 测定,估计EV AP evaporator 蒸发器EX example 例子EXAM examination 检验,验算,考试EXC excitation 励磁EXCDD exceeded 超过的EXCE exciter end 励磁机端EXCH exchanger 交换器,交换剂EXCL exclusion 排除在外,拒绝EXCSS excess 过量,超过量,剩余的EXGU extinguisher 灭火器EXH exhaust 排气,排出EXHD exhaust dust 排气灰尘EXL external 外部的EXP expansion 膨胀,延伸率EXPLO explosion 爆炸,炸裂EXR exciter 励磁机EXT extension 伸长,延长,延伸EXTI extinction 熄灭,消失,衰减EXTN extraction 抽取,提取EXTR extractor 分离器,分离机,抽气器EXTRN extreme 末端的,极端的,过度的E/F earth fault 接地故障E/H electro hydraulic 电压-液动的E/SW earthing switch 接地开关F-B feedback 反馈F-C flow control 流动控制,流量控制FAC forced air cooling 强制空气冷却FACIL facility 设备,工具,器材FAIL failure 故障,失灵FC fluid coupling 液力耦合器FCD forced 强制的FCG facing 端面车削,饰面FD forced draft 强制通风FDLNE feed line 给水(油)管路,馈线FDN foundation 基础,底座FDPIP feed pipe 给水管道,供给管道FDR feeder 进料器,馈电线FEED feed 供给,给水FELD field 场,现场FELR feeler 塞尺,厚薄规,探针FFW fire fighting water 消防用水FG fuel gas 气体燃料FGC functional group control 功能组控制FIG figure 插图GIGH fighting 灭火的FIL fill 充注,装料FIR fire 火焰,燃烧FIX fixing 固件,附件,修理FLD fluid 流体FLEX flexible 挠性的FLG flange 法兰FLL full 充满的,完全的FLM flame 火焰FLOC flocculator 絮凝器(池)FLOW flow 流动,流量FLP flap 挡板,阀瓣,闸门FLR filler 注油口,漏斗,填充物FLSH flash 闪光,闪蒸FLT fault 故障FLTR filter 过滤器FLTY faulty 出故障的FLUGAS flue gas 烟气FLUSH flush 冲洗,齐平的FM foam 泡沫FN fan 风扇FNL final 最终的FO fuel oil 燃油FORMA formation 形成,成形FP feed pump 给水泵,供给泵FR front 前面,锋面,额线FRAC fraction 份额,分数FREQ frequency 频率FRICT friction 摩擦FRM frame 机架,框架FS fuse 保险丝FST fast 快的FSTNR fastener 紧固件FTOR factor 系数,因素,要素FU fuel 燃料FULFLD fulfilled 满足的,实现的FUNCT functional 功能的FUND fundamental 基本的,基础FURN furnace 炉膛FV flash vessel 闪蒸箱,膨胀箱FW feed water 给水FWD forward 向前的,运送FWP feedwater pump 给水泵FWT feed water tank 给水罐(箱)FXTR fixture 夹具F/T fault/trip 故障/跳闸G gauge 量规,量测仪器GALV galvanic (流)电的,镀锌的GAS gas 气体GASF gasifier 气化器GA T gate 闸门,选通器GA T-V gate valve 闸阀GBRG gearbox bearing 齿轮箱轴承GD grid 电网GDE guide 导向件,指南GDEV AN guide vane 导叶GEN generator 发电机GENBUS generator bus 发电机母线GENE generator end 发电机端GENL general 概要GFCHX generator forced cooling heat exchanger 发电机强制冷却热交换器GFCPP generator forced cooling pump 发电机强制冷却泵GL globe 球形物,球体GLND gland (密封)压盖GLS glass 观察窗,玻璃GMTRY geometry 几何形状GND ground 接地,地线,地GOV governor 调速器,调节器GPH graphic 图的,图示的,图线的GR gear 齿轮GRA graphite 石墨GRAD gradient 梯度GRA V gravel 砂砾(层)GRA VI gravity 重力GRBXS gear box side 齿轮箱侧GRD grinder 砂轮,磨床GRDTN graduation 分度,分等级GRP group 组,族,类GRPG grouping 分类,分组,配置GRS grease 润滑油脂GRT grout 灰浆GRV groove 槽,凹口GRVD grooved 开槽的GRWT gross weight 毛(总)重GS generator side 发电机侧GSA general service air 总供气GSKT gasket 垫片GT gas turbine 燃气轮机GTB gas turbine building 燃气轮机间GTC gas turbine controller 燃气轮机控制器(调节器) GTE grate 格栅,炉篦GTG gas turbine generator 燃气轮机发电机GTY gantry 吊机架,高架起重机GWH gigawatt-hour 千兆瓦一小时GWTH growth 增大,长大G/BOX gearbox 齿轮箱G/BOXES gearbox side 齿轮箱侧H high 高的H-OIL heavy oil 重油H2 hydrogen 氢气H2/S h2 side 氢气侧HA hot air 热空气HAS hardwired alarm system 硬连接报警系统HD head 头部,扬程HD-O-DE delivery head 输送扬程HDL handle 手柄,手轮,把手HDLG handling 处理HDLS headless 无头的HDNS hardness 硬度HDR header 联管箱,标题HDWHL handwheel 手轮HEX hexagon 六角(边)形HF-OIL heavy fuel oil 重(燃)油HG mercury 水银HGT height 高度HH high high 高高HK hook 吊钩HLDG holding 夹持HLDR holder 夹具,焊把HLF half 一半HLL hall 机房,办公大楼HMNC harmonic 谐波,谐波的HNG hinged 铰接的HOG hot gas 热燃气HOL hollow 空心的HOR horizontal 水平的HOU house 房子HP high pressure 高压HPCP high pressure circulation pump 高压循环泵HPFP high pressure feed pump 高压给水泵HPPR hopper 漏斗HPS high pressure steam 高压蒸汽HPT high pressure turbine 高压涡轮HRB heat recovery boiler 余热锅炉HRSG heat recovery steam generator 余热锅炉HS heating steam 加热蒸汽HS-V heat steam valve 热蒸汽阀HSG housing 外壳,轴承座HSG-V heat steam gate valve 热蒸汽闸阀HSPD high speed 高速HST hoist 升降机,卷扬机,绞车HTEMP high temperature 高温HTG heating 加热HTN high tension 高张力,高应力状态HTR heater 加热器HUMID humidity 湿度HUNT hunting 寻找(故障),震荡HVDY heavy duty 重型的,重载的HVOLT high voltage 高电压HW hotwell 热井HX heat exchanger 热交换器HYBR hybrid 混合的,混合电路HYD hydraulic 液压的,液力的HYDR hydrazine 联氨HYDRST hydrostatic 流体静力的HYPO hypochloric 次氯(酸)的H/A hand/auto 手动/自动H/STEP hydraulic step 液压步进I-V isolating valve 隔离阀ID induced draft 引风(机)IDC individual drive control 单一传动控制IDFN induced draught fan 引风机IDR inside diameter 内径IDX index 索引,下标IFO in front of 在……前面IGN ignition 点火IGNTR ignitor 点火器IGV inlet guide vanes 进口导叶IMM immersed 浸没的IMMED immediate 直接的,立即的IMP impulse 脉冲IMPD impedance 阻抗IMPLR impeller 叶轮IMPT impact 冲击INBD inboard 舱内的,机内的,内侧的INC incoming 入射的,进入的INCL inclusive 包括的,内含的INCLN inclination 倾斜INCR increment 增量IND indication 指示INDC induced 感应的INDEP independent 独立的,无关的INDIV individual 个别的,单独的INDR indoor 室内的INF infinite 无限的INFD infeed 横切(进给)INFL inflow 流入,入流INFLL inflammable 可燃的INFO information 信息INHER inherent 固有的INHIB inhibitor 抑制剂INIT initiation 开始,起动,激发INJ injection 注入,喷入INL inlet 入口INP input 输入INR inner 内部的INRIA inertia 惯性INRT inert 惰(惯)性的,不活泼的INR.B inner bottom 内(部的)底INR.T inner top 内(部的)顶INS inside 内部INSP inspect 检查INSRT insert 插入,插入件INST instantaneous 瞬时(作用)的INSTR instrument 测量仪表INT integration 集成,综合INTCHG interchange 交换INTCLR intercooler 中间冷却器INTCOM intercommunication 互相通讯INTCON interconnecting 相互连接INTCOV intercover 中间覆盖层INTCPT interceptor 遮断器INTEN intensity 强度,密集度INTFER interference 干扰INTGTR integrator 积分仪,积算器INTK intake 进口,吸入INTL internal 内部的INTM intermediate 中间的,媒介物INTPOS interposing 置于……之间INTR interior 内部的INTRPT interrupt 中断,间断INTSCT intersection 相交INTST interstage 级间的INTTRN interturn 变化中的,转换INV inverter 变换器INVS inverse 相反的,倒的ION ion 离子IPD isolated phase bus duct 分相封闭式母线导管IR infra-red 红外线IRREG irregular 不规则的ISEN isentropic 等熵的ISOL isolating 隔离的,绝缘的ISOLR isolator 隔离开关,绝缘体I&C instrumentation and control 仪表和控制I/F interface 接口,界面I/L interlock 联锁I/MIT intermittent 间歇的,脉动的JAMG jamming 堵塞,干扰JB junction box 接线盒JKT jacket 护套,套管JN join 联合,接合JNL journal 轴径JOG joggle 摇动,榫接JT joint 接头,连接JTY jetty 码头JUNCT junction 接合,接头KBD keyboard 键盘KEYSW key switch 电键开关KPL kick plate 脚瞪板L level 液位L-C level control 液位控制L-O lock out 切断,闭锁LAB laboratory 实验室LAD ladder 梯子LAG lagging 隔热层,滞后LAGN lagoon (污泥)储留池LATL lateral 横向的,侧向的LBL label 标签LBR lumber 木材LBYR labyrinth 曲径式密封LCH latch 掣爪LCL local 局部的,机旁的,本机的LCR local control room 就地(机旁)控制室LDG loading 装料,升负荷LDS lead(s) 引线,导管LEAKG leakage 漏泄LFT left 左面的LG length 长度LGC logic 逻辑LGE large 大的LGR logging 记录,值班记录LH left hand 左手侧LHB left hand bottom 左手侧底部LHT left hand top 左手侧顶部LIFT lifting 提升LIN linear 真线的,线性的LIOP lifting oil pump 顶轴油泵LIQ liquid 液体LIT light 光,轻的,点亮(火) LITG lighting 照明,点灯(火)LITNG lightning 放电,闪电LJUSTRM ljungstroem 尔琴斯特洛耶姆(人名) LK leak 漏泄LKGE linkage 连接,连杆LL low level 低液位(低电平)LLD low load 低负荷LM lumen 流明(光通量单位) LME lime 石灰LMT limitation 限制LMTM limit monitor 极限监测器LMTR limiter 限制器LNE line 线路,管线LNG long 长的LNGT long time 长时间LO lubricating oil 润滑油LOAD load 负载LOC lubricating oil cooler 润滑油冷却器LOCK locker 柜,锁扣装置LONG longitudinal 纵向的LOP lube oil pump 润滑油泵LOT lube oil tank 润滑油箱LOUV louver 百叶窗LOW low 低的LP low pressure 低压LPCP low pressure circulating pump 低压循环泵LPFP low pressure feed pump 低压给水泵,低压供给泵LPIP loop pipe 环形管道LPS low pressure steam 低压蒸汽LSPD low speed 低速LSS loss 损失LT lamp test 灯试法LUB lubrication 润滑LUBCH lubricant change 润滑剂更换LUM luminous 发光的LV low voltage 低电压LV AC low vacuum 低真空度LVE live 有效的,新鲜的LVOLT low voltage 低电压LWR lower 较低的,下部的LWRG lowering 降低L/O leak-off 漏泄M-V modulating valve 调节阀MACH machine 机器MAG magnet 磁铁MAGTD magnitude 大小,幅度MAIN main 主要的,总线MALF malfunction 不正常工作,故障MAN manual 手动的MANO manometer 压力计MARG margin 裕度,余量MARSG marshalling 配置整齐MAX maximum 最大的MC mechanical configuration 机械结构MCB miniature circuit breaker 微型断路器MCC motor control center 马达控制中心MCD module control desk 单元控制台MCP module control panel 单元控制盘MCR maximum continuous rating 最大的连续额定功率MDE mode 方式MDE-O-DR mode of driving 驱动方式MDE-O-OPR mode of operation 运行方式MDN median 中央的,中线的,中值MEAS measurement 测量MECH mechanical 机械的MED medium 介质,中等的MET metering 测量,计量MF minimum flow 最小流量MFC minimum flow control 最小流量控制MFL minimum flow line 最小流量管线MFLD manifold 总管MIC micro 微观的,微量的MID middle 中间的,中间MIN minimum 最小的MINI miniature 微型的,小型的MISC miscellaneous 杂项的,其它ML mill 工厂,研磨机MLOP main lubricating oil pump 主润滑油泵MLOT main lubricating oil tank 主润滑油箱MOB mobile 可移动的MOD module 模件,组件MODG modulating 调节MODG-D modulating damper 调节挡板MODI modify 修改MOIS moisture 湿度,潮气MOISG moistening 加湿MON monitor 监视器MPSW measuring point selector switch 测量点选择开关MS main steam 主蒸汽MSTR master 主要的,工长MTL metal 金属MTN motion 运动MTR motor 马达,原动机MULT multiple 多重的MVBL movable 可活动的MVG moving 活动的MVT movement 运动,动作MXD mixed 混合的MXG mixing 混合MXT mixture 混合物M/U make-up 补给N-COIN non-coincidence 不一致,非吻合NAOH caustic soda 苛性钠NAR narrow 狭窄的NA T natural 自然的NB nominal bore 标称孔径NBR number 数目,号码ND nominal diameter 标称(名义)直径NDE non-driving end 非驱动端NDL needle 针,指针NEC necessary 必要的NEG negative 负的NEUT neutral 中性的,不带电的NEUTRALN neutralization 中和作用NG natural gas 天然气NIP nipple 螺纹接头NLTC no-load tap changer 空载抽头切换开关NO2 nitrogen-dioxide 二氧化氮NOM nominal 标称的,名义的NORM normal 正常的NOT not 不NOX nitrogen oxide 氮氧化物NOZ nozzle 喷嘴NP nominal pressure 标称压力NPSH net positive suction head 净正抽吸压头NR non-return 止回的NRF non-return flap 止回挡板NRV non-return valve 止回阀NTH north 北方PL not complete 未完成的,不完全的N.ON not on 未接通N.OPEN not open 未打开N.REGEN not regenerating 不再生的,不回收的N/C normally closed 常闭的N/O normally open 常开的O-CLR oil cooler 油冷却器,冷油器O-CP oil collecting pit 集油坑O-PMP oil pump 油泵O-TNK oil tank 油箱O-TRN oil turner 油搅动器O-WST oily waste 含油废料O2 oxygen 氧气OA overall 总的OBL obligatory 必须做的OCC occupation 占有,职业OD outside diameter 外(直)径OFLTC off-load tap changer 卸载抽头切换开关OIL oil 油,滑油OLC open loop control 开环控制OLTC on-load tap changer 加载抽头切换开关OP operation 运行,操作OPERD operated 运行的OPN open loop control 打开,敞开的OPNG opening 打开OPP opposite 相对的,对面的OPRL operational 运行的,操作的OPT optical 光学的OPTR operator 操作人员,操作符ORD order 次序,命令,数量级ORF orifice 孔板ORIG original 原始的,原型OSC oscillate 振荡OSCGRM oscillogram 示波(波形)图OT outlet temperature 出口温度OTC outlet temperature calculated 计算的出口温度OUT outside 外部的OUTDR outdoor 室外的,露天的OUTGG outgoing 输出的,离开的OUTR outer 外部的,表面的OUTR.B outer bottom 外底部OUTR.T outer top 外顶部OV over 在……上方,经过,结束OV AP oil vapor extractor 油蒸汽抽气器(分离器) OVEREXC over excitation 过励磁OVTR overtravel 多余行程,过调O/C over current 过(电)流O/C-S/C over current short circuit 过(电)流短路O/FL overflow 溢流,溢出O/L overload 过载O/P output 输出量,输出功率O/S overspend 超速P-BLOW pressure blow 压力鼓风P-C pressure control 压力控制P-GRAD pressure gradient 压力梯度P-RA TIO pressure ratio 压比P-V pilot valve 导阀,伺服阀PA primary air 一次空气PABL primary air blower 一次空气送风机PACK package 包装,成套设备PAF primary air fan 一次空气风扇PANT pantograph 比例绘图器PART particle 微粒PASS passage 通道PB pushbutton 按钮PC printed circuit 印刷电路PCB printed circuit board 印刷电路板PCC power control center 电力控制中心PCE piece 件,个PD pond 蓄水池PDSC power dispatch system center 电力输配系统中心PED pedestal 支座,支架,轴架,垫座PEN penetration 贯穿,透过PERD periodic 周期性的PERM permanent 永久的,常设的PERMB permiability 渗透率,透气性PERP perpendicular (与……)垂直PF power factor 功率因数PFE profile 型面,叶型,断面图PFL pulferised fuel 雾化燃料PFM power factor meter 功率因数测定仪PG purge gas 清吹气体PGMT pigment 颜色,加颜色PH phase 相位,阶段PH-R phase r R相PH-S phase s S相PH-T phase t T相PHOS phosphate 磷酸盐PIP pipeline 管线PIST piston 活塞PIT pit 坑PK peak 峰值PKT pocket 囊,套PL plunger 柱塞PLA plate 板PLATF platform 平台PLC place 地方,场所,位置PLE pole (磁,电)极PLG plug 螺塞,插头PLG-IN plug-in 插座,插入PLR pillar 支柱PLRTY polarity 极性PLS pulse 脉冲PLSG pulsating 脉动PLT pilot 导向器,控制器PLTG plating 电镀,镀敷PM permanent magnet 永久磁铁PMP pump 泵PNEU pneumatic 气动的PNL panel 壁板,仪表板PNT point 点,指针PO premix operation 预混合运行POL polishing 抛光POLPHOSPH polyphosphate 聚磷酸盐PORT portable 手提式的,移动式的,便携式的POS positive 正的,肯定的POSN position 位置POSNR positioner 定位器POSS possible 可能的POT potable 饮用的POTI potentionmeter 电位针PR pair 一对,线对,对绞PRB probe 探针,测头PRCN precision 精度,精确的PRECIP precipitator 沉淀,淀析PRECT precoat 预涂(层),底漆PREM premix 预混合PREP preparation 预制,预先加工,准备PRES pressure 压力PRF proof 证明,证据PRFM performance 性能PRGG purging 清吹PRGM program 大纲,计划,程序PRI primary 一次的,主要的,最初的PRMG priming (涂)底漆PRMTR parameter 参数PROBY probability 概率,可能性PROC process 过程PROJ project 计划,方案,工程PROPN proportional (成正)比例的PROT protective 保护的,保护剂PRSD pressed 加压的,模压的PRT partial 部分的PRTR printer 印刷机,打印机PS pump side 泵侧PSIG pressure above atmosphere 超过大气压的压力值PSS power system stabiliser 电力系统稳定器PT plant 装置,电站,工厂PTN partition 隔板PUB public 公用的,公开的PUL pull 拉伸,牵引PULV pulferising 雾化PUL Y pulley quarter 滑轮PUR purity 纯度,纯化PURIF purifier 净化器PW primary water 一次水PWDR powder 粉末PWR power 电力,动力,功率P/HTR preheater 预热器QCK quick 快的QTC quartz(crystal) 石英QTR quarter 四分之一,象限QTY quantity 数量R right 右面的,正确的R-V regulating valve 调节阀RA rate 比率,速率RAD radial 径向的RADN radiation 辐射,散热器RAP rapping 敲击,振打RAW raw 未处理的,粗制的RC reinforced concreteRCPT receipt 回执,收据RCTN reaction 反应RCV receiving 接收RCVR receiver 接收机,储气室RCVY recovery 恢复,回收RDCN reduction 减少,还原RDDCY redundancy 冗余度RDY ready 准备好的,就绪RE refreactory 耐熔的,高熔点的,耐火材料REAC reactor 反应器,反应物,电抗器REACT reactive 反应的,无功的REC recorder 记录器RECIP reciprocate 往复RECLMR reclaimer 回收设备,再生装置RECLR recooler 重(二次)冷却器RECT rectifier 整流器RECTA rectangle 矩形,直角RED reducer 减压器,变径管,异径接头,还原剂REDU reducing 减少,还原REF reference 参考,基准REFGT refrigerant 致冷剂,冷却介质REFL reflector 反射器REFRD refrigerated 致冷的REG regulate 调整REGEN regeneration 再生,恢复,回热REGR regenerator 回热器REGST registration 登记,注册,记录REHT reheat 再热REHTR reheater 再热器REJ rejection 拒绝,排斥,干扰,抑制REL relative 相对的,关联的RELBL reliable 可靠的RELS release 释放,开通REM remote 遥控的,遥示的REMA remote actuation 遥控致动REMV removal 移动,除去RES resistant 抗(耐)……的RESDL residual 残留的,残余物RESOLN resolution 溶解,分辨RESTRIC restricted (受)限制的RETN return 返回,复原,回动RETRAC retractable 能缩进的REV revise 修改,修订REVO revolution 转动,转数REW review 审查,综述RF raised face(flange) 隆起面(法兰)RFO ready for operation 运行准备就绪RGD rigid 刚性的,坚固的RGH rough 粗糙的RH right hand 右手侧RHB right hand bottom 右手侧底部RHEO rheostat 变阻器RHT right hand top 右手侧顶部RIB ribbed 带肋的RIG rigging 装配,安装,悬吊,索具RKE rake 倾斜,坡度,倾角RL relief 减轻,卸载,降压RLR roller 滚子,滚柱RLV relieving 减轻,卸载RL Y relay 继电器RM room 房间,室RND rounding 修圆RNG ring 环RNGE range 范围RNGG ringing 环绕,鸣铃RNS rinsing 冲洗ROD road 路ROL roll 滚动,滚子ROOF roof 顶盖ROT rotation 旋转RPLSN repulsion 排斥,斥力RPM revolution per minute 转/分RPPR rapper 振动器,松模工具,轻敲锤RPT repeat 重复RR rear 后部RSN resin 松香,树脂RSPSE response 响应RSR riser 提升器RST reset 复位,重新调整RSV reserve 保留,备品RSVR reservoir 储罐,储存器RT resin trap 树脂捕集器RTD rated 额定的RTG rating 额定值RTNG roating 旋转RTR rotor 转子RTRY rotary 旋转的RTSBL roots blower 罗茨鼓风机RTSCOMPR roots compressor 罗茨压缩机RUB rubberized 给……贴上橡胶的RUN running 运行着的RUPT rupture 破裂RVLG revolving 旋转的,转动的RVSE reverse 反的,逆流的RW raw water 未经处理的水,生水R/C recirculating 再循环S shaft 轴S-V stop valve 截止阀SA seal air 密封空气SA-V safety valve 安全阀SAFETY safety 安全性SAL salt 盐SAMP sample 试样,取样SAN sanitary 卫生的SATN saturate 使饱和SB switchboard 配电盘,开关板SC scale 刻度,比例,称SCAN scanner 扫描仪SCN screen 屏幕,屏蔽物SCOPE oscilloscope 示波器SCR screw 螺钉SCTR sector 扇形,区SCVGG scavenging 吹除,清除SCW service cooling water 冷却水供水SCWP service cooling water pump 冷却水供水泵SD side 边,侧SEC section 截面,部分,节SECY secondary 二次的,副线圈,辅助的SEE static excitation equipment 静态励磁设备SEG segmental 部分的,扇形的SEL selection 选择SEN sensing 感觉SENSR sensor 传感器SEP separator 分离器SEQ sequence 顺序SERV service 服务,供(水、油) SERVWDIP service water distribution pump 供水分配泵SERWTR service water 供给水SET setting 设置,调整。

STM32F103RB数据手册

STM32F103RB数据手册
STM32F103x8 STM32F103xB
Medium-density performance line ARM-based 32-bit MCU with 64 or 128 KB Flash, USB, CAN, 7 timers, 2 ADCs, 9 communication interfaces
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VFQFPN36 6 × 6 mm
LQFP48 7 × 7 m LQFP100 14 × 14 m LQFP64 10 × 10 m
BGA100 10 × 10 mm BGA64 5 × 5 mm

Debug mode – Serial wire debug (SWD) & JTAG interfaces 7 timers – Three 16-bit timers, each with up to 4 IC/OC/PWM or pulse counter and quadrature (incremental) encoder input – 16-bit, motor control PWM timer with deadtime generation and emergency stop – 2 watchdog timers (Independent and Window) – SysTick timer: a 24-bit downcounter Up to 9 communication interfaces – Up to 2 x I2C interfaces (SMBus/PMBus) – Up to 3 USARTs (ISO 7816 interface, LIN, IrDA capability, modem control) – Up to 2 SPIs (18 Mbit/s) – CAN interface (2.0B Active) – USB 2.0 full-speed interface CRC calculation unit, 96-bit unique ID Packages are ECOPACK® Device summary

实用英文缩写

实用英文缩写

3WN THREE WINDING 三相绕组A ALARM报警AB AUXILIARY BOILER 辅助锅炉ABBRE ABBREVIATIONABN ABNORMAL 非正常ABS ABSOLUTE 绝对ABSBR ABSORBER 减震器ABT ABOUT 关于ABV ABOVE 上述AC ALTERNATING CURRENT 交流电ACB AIR CIRCUIT BREAKER 气动断路器ACC AIR COOLED CONDENSER 空冷凝汽器ACCES ACCESSORY 附件ACCL ACCELERATION 加速ACCP AIR COOLED CONDENSING UNIT空冷凝结水单元ACCP AIR COOLED CONDENSING PLANT 空冷凝结水设备ACCUM ACCUMULATOR 蓄电池ACD ACIDIC 酸性的ACD ACID 酸ACKN ACKNOWLEDGE 承认ACS ACCESS 通道ACT ACTUAL 实际的ACTD ACTUATED 启动的ACTG ACTING 起作用的ACTIV ACTIVE 活动的ACTIV ACTIVATED 激活的ACTN ACTION 行为ACTR ACTUATOR 执行机构ACW AUXILIARY COOLING WATER 辅助冷却水AC/O AUTOMATIC CHANGE OVER 自动变更AD ANODE 阳极ADD ADDITIONAL 额外ADJ ADJUSTABLE 可调整的ADJ ADJUSTER 调节器ADJ ADJUSTING 调整ADMN ADMISSION 同意ADPTR ADAPTER 适配器ADR ADDRESS 地址ADS ADSORBER 吸收器ADV ADVANCE 优势AFT AFTER 之后AGG AGGREGATE 集合AGIT AGITATOR 搅拌器AGT AGENT 媒介AHD AHEAD 之前AIR AIR 空气AIR-V AIR VALVE 空气阀ALKALTY ALKALINITY 碱ALLOW ALLOWANCE 允许的ALTRN ALTERNATOR 交流发电机AMB AMBIENT 周围的AMM AMMETER 电表AMNA AMMONIA 氨水AMPL AMPLIFIER 放大器AMPTD AMPLITUDE 振幅AN ANION 阴离子ANAL ANALYZER 分析器ANLG ANALOG 类似物ANN ANNUNCIATOR 报警器ANN LAMPA ANNUNCIATOR LAMP ALARM 灯光报警器ANT-FM ANTI-FOAM 抗泡沫的ANT-IC ANTI-ICING 防冰的ANX ANNEX 附件;毗屋APPAR APPARATUS 设备ARBLT AIR BLAST 气喷净法ARCT AIR COLLECTING TANK 空气聚集箱ARHTR AIR HEATER 空气加热器ARR ARRESTOR 避雷器ASH ASH 灰尘ASMOISP ASH MOISTENING PUMP 润灰泵ASSY ASSEMBLY 装配ATM ATMOSPHERE 大气ATM ATMOSPHERIC 大气的ATMZR ATOMIZER 喷雾器ATP ATTEMPERATOR 保温装置ATT AUTOMATIC TURBINE TESTER 自动透平检测器AUD AUDIBLE 听得见的AUTO AUTOMATIC 自动的AUX AUXILIARY 辅助的,补助的AUXVOLT AUXILIARY VOLTAGE 辅助电压AVAIL AVAILABLE 可获得AVE AVERAGE 平均的AVR AUTOMATIC VOLTAGE REGULATOR 自动电压调节器AX AXIAL 轴向的AXS AXIS 轴A/S AIR SIDE 空气侧B-LOAD BASE LOAD 基本荷载BACKW BACKWASH 逆流BAL BALANCE 平衡BAR/GR BARRING GEAR 盘车装置BAS BASIN 盆,盆地BATT BATTERY 蓄电池BB BUS BAR 母线BBOX BLACK BOX 黑匣子BC BINARY CONTROL 二进制控制BEF BEFORE 之前BEH BEHIND 之后BF BOILER FEED 锅炉给水BHOU BOILER HOUSE 锅炉房BIN BINARY 二元的,双的BIOSY BIOCIDE GENERATION SYSTEM 生物杀灭剂产生装置BLD BLADING 安装叶片BLD BLADE 叶片BLI BLINKING 闪光的BLK BLOCKED 封锁的,联锁的BLK BLOCKING 闭锁;门插销BLO BLOCK 木块,块BLR BOILER 锅炉BLRCLD BOILER CLADDING 锅炉保温BLWR BLOWER 鼓风机,风机BNDL BUNDLE 捆,束BNK BANK 储存库;银行BOT BOTTLE 瓶子BOX BOX 盒子BP BOOSTER PUMP 升压泵,前置泵BPT BOOSTER PUMP TURBINE 汽动升压泵BR BARREL 桶BRCH BRANCH 分支,分流BRD BOARD 板BRDG BRIDGE 桥BRG BEARING 轴承BRK BREAKING 阻断,破坏BRKR BREAKER 断路器BRN BRINE 盐水BS-V BOILER STOP VALVE 锅炉关闭阀BSDG BLACK START DIESEL GENERATOR 黑启动柴油发电机BSHG BUSHING 轴衬,套管BSTM BLED STEAM 废蒸汽BSTM-V BLED STEAM VALVE 废蒸汽阀BSTR BOOSTER 调压器BTM BOTTOM 底部BTTN BUTTON 按钮BTWN BETWEEN 之间BUCHZ BUCHHOLZBUF BUFFER 缓冲器BUI BUILDING 建筑物BURN BURNER 火炉BUSDCT BUSDUCT 母线管BUT-V BUTTERFLY VALVE 蝶阀BW BALANCE WATER 平衡水B/D BLOWDOWN 排污B/P BYPASS 旁路B/PI-V BYPASS ISOLATING VALVE 旁路隔离阀B/UP BACK-UP 支持,倒退C-C COMBUSTION CHAMBER 燃烧室C-CL COMBUSTION CHAMBER LEFT 燃烧室左侧C-CR COMBUSTION CHAMBER RIGHT 燃烧室右侧CA COLD AIR 冷空气CAB CABINET 柜子CAG CAGE 笼子CAL CALIBRATION 刻度,校准CALC CALCULATED 计算出的,适当的CALC CALCULATION 计算CAN CHANNEL 水道,沟;频道CAN CANAL 槽,导管;运河CAND CANDLE 蜡烛CAP CAPACITOR 电容器CAPY CAPACITY 容量CARB CARBON 碳CARR CARRIER 行李架;载波CARR CARRYING 运输的CARWA CAR WASHING AREA 洗车区域CAT CATION 阳离子CATH CATHODE 阴极CATY CATALYZER 催化剂CB CIRCUIT BREAKER 断路器CBD CONTINUOUS BLOW DOWN 连排CBL CABLE 电缆CBO COMPRESSOR BLOW-OFF 压气机抽气CC COMBINED CYCLE 联合循环CCEP COND COLLECTING TANKEXTRACTION PUMPS凝结水收集箱抽水泵CCP COMBINED CYCLE PROCESS 联合循环过程CCPP COMBINED CYCLE POWER PLANT 联合循环电厂CCR CENTRAL CONTROL ROOM 集控室CCT CIRCUIT 电路CCW CLOSED-CIRCUIT COOLING WATER 闭环冷却水CCWHX CLOSED COOLING WATER HEATEXCHANGER 闭式冷却水热交换器CCWP CLOSED COOLING WATER PUMP 闭式冷却水泵CD CLEAN DRAINS 清洁排放CDV CONDENSER DRAINS VESSEL 凝汽器疏水阀CENT CENTRAL 中央的CENTRIF CENTRIFUGAL 离心的CENTRIF CENTRIFUGE 离心分离机CEP MAIN CONDENSATE PUMP 主凝结水泵CEP CONDENSATE EXTRACTION PUMP 凝泵CEP MAIN CONDENSATE EXTRACTIONPUMP 主凝泵CF CONTROL FLUID 控制液体CG COLD GAS 冷燃气CH CHANGE 改变,变化CHAR CHARACTER 特征CHEM CHEMICAL 化学的CHG CHANGER 转换器CHGE CHARGE 电荷,充电CHGR CHARGER 充电器CHGR CHARGING 装料CHIM CHIMNEY 烟囱CHK CHECK 检查,核实CHLD CHILLED 冷冻的CHLOPL CHLORINATION PLANT氯处理工厂CHLOR CHLORINE 氯CHLR CHILLER 冷却器CHMB CHAMBER 室,房间CHRST CHARACTERISTIC 特性,特征CI CONTROL INTERFACE 控制接点CIRC CIRCULATION 循环CIRC CIRCULATING 循环CIRC CIRCULATED (使)循环CJC COLD JUNCTION COMPENSATOR 低温补偿器CK CHOKE 阻塞,阻气门CL CLUTCH 离合器CLARFR CLARIFIER 澄清器CLC CLOSED LOOP CONTROL 闭环控制CLD COOLED 冷的,冷却的CLG COOLING 冷却,冷却的CLK CLOCK 时钟CLKW CLOCKWISE 顺时针方向CLN CLEAN 清洁的;清扫CLNG CLEANING 清洁CLNT COOLANT 冷冻剂CLR COOLER 冷却器CLS CLOSING 关闭的,结束的CLS CLOSE 关闭CLSD CLOSED 关闭的CLT COLLECTOR 收集器CLTG COLLECTION 收集,聚集CLTG COLLECTING 收集,聚集CMD COMMAND 要求CMP RM COMPUTER ROOM 计算机室CMPD COMPOUND 混合物;混合CMPNT COMPONENT 部件,成分CMPTR COMPUTER 计算机CNCL CANCEL 撤消,取消CND CONDUIT 管道,沟渠CNDCTR CONDUCTOR 领导者CNTNR CONTAINER 集装箱CNTOR CONTACTOR 电流接触器CNTR COUNTER 计算器CNTRWT COUNTERWEIGHT 平衡物,平衡力CO2 CARBON DIOXIDE 二氧化碳COAG COAGULANT 凝结剂COAL COAL 煤碳COEF COEFFICIENT 参数,系数COIL COIL 盘绕,卷COL COLUMN 柱子;列COLD COLD 冷的COM COMMON 公用的COMB COMBUSTION 燃烧COMBI COMBINED 联合的COMBI COMBINATION 联合COMM COMMISSIONING 调试COMMUN COMMUNICATION 联系,通信COMP COMPRESSION 压缩COMP COMPRESSED 压缩的COMPEN COMPENSATING 补偿,补助COMPEN COMPENSATION 补偿,赔偿COMPGR COMPENSOGRAPHCOMPL COMPLETE 完成;完整的COMPL COMPLETED 完整的COMPOR COMPENSATOR 补偿器COMPR COMPRESSOR 压缩机CON CONTACT 连接,接触CONCT CONCENTRIC 中心的CONCT CONCENTRATE 浓缩,集中COND CONDENSING 冷凝COND CONDENSATION 浓缩COND CONDENSATE 凝结水CONDG CONDITIONING 条件,工况CONDR CONDENSER 凝汽器CONDY CONDUCTIVITY 导电性CONN CONNECTION 连接CONN CONNECTOR 连接器CONST CONSTANT 常数,恒定的CONSU CONSUMPTION 消耗CONTIN CONTINUOUS 连续CONTR CONTRACT 接触CONTT CONTENT 内容CONV CONVERTING 转换CONV CONVERTER 转换器CONVY CONVEYER 输送带COORD COORDINATE 坐标COORD COORDINATION 协调,调和COR CORE 铁心CORR CORRECTOR 校正者,修正者CORR CORRECTED 修正的CORR CORRECTION 修正COS COSINE 余弦COV COVER 盖子,覆盖CP CIRCULATION PUMP 循环泵CPH CONDENSATE PREHEATER 凝结水预热器CPL COUPLER 联轴器CPL COUPLING 偶合,联结CPL COUPLE 连接,接合CPP CONDENSATE POLISHING PLANTCPU CENTRAL PROCESS UNIT 中央操作单元CR CONTROL ROOM 控制室CRG CARRIAGE 车架,车厢CRIT CRITICAL 重要的,关键的CRK CRANK 曲柄CRN CRANE 行车CRNMTR CHRONOMETER 计时器CRO OSCILLOGRAPH 示波器CROIL CRUDE OIL 原油CRP CONDENSATE RECIRCULATIONPUMP 凝结水再循环泵CRS COARSE 粗糙的CRSH CRUSHER 破碎机CRSN CORROSION 腐蚀CRSV CORROSIVE 腐蚀的;腐蚀剂CRSVR CROSS OVER 横渡CRTA CRITERIA 标准CRV CURVE 曲线CSG CASING 缸CST CONDENSATE STORAGE TANK 凝结水储存箱CSTG CASTING 铸造,铸件CT CURRENT TRANSFORMER 电流变压器CTCHR CATCHER 捕捉器(离合器) CTG COTANGENT 余切CTP CONDENSER TRANSFER PUMP 凝汽器输送泵CTP CONDENSATE TRANSFER PUMP 凝结水输送泵CTR CENTRE 中心,中央CTRL CONTROLLER 控制器CTRL CONTROL 控制CTRL-V CONTROL VALVE 控制阀CTWR COOLING TOWER 冷却塔CUB CUBICLE 柜,室CULV CULVERT 管路CUR CURRENT 电流CUT CUTTER 切割机CVRSN CONVERSION 转换CW COOLING WATER 冷却水CWP CIRCULATING WATER PUMP 循环水泵CWP MAIN COOLING WATER PUMP 主要冷却水泵CWPB CIRCULATING WATER PUMPBUILDING 循环水泵房CWPIP MAIN COOLING WATER PIPE 主要冷却水管CWPIP CIRCULATING WATER PIPE 循环水管道CY CYCLE 循环CYL CYLINDER 汽缸C/O CHANGE OVER 对调位置D DAY 天D-V DRAIN VALVE 疏水阀DA DEKADAMP DAMPER 挡板DAS DATA ACQUISITION SYSTEM 数据获取系统DAT DATE 日期DAT DATUM 数据DATA DATA 数据(复数)DB DECIBEL 分贝DBL DOUBLE 双的,两倍的DC DIRECT CURRENT 直流电DCPLG DECOUPLING 退耦(装置)DCT DUCT 输送管DE DRIVE END 驱动端DE-EX DE-EXCITATION 退激发DECARB DECARBONIZED 除去碳素的DECARB DECARBONATED 除去碳酸的DECR DECREASE 减少DEF DEFECTIVE 有缺陷的DEF DEFECT 过失,缺点DEFL DEFLECTION 偏差,偏斜DEFL DEFLECT 偏斜DEG DEGREE 度DEGAS DEGASING 除去瓦斯DEGC DEGREES CELSIUS 摄氏度DEGC CENTIGRADE 摄氏度的,百分度的DEGF DEGREE FAHRENHEIT 华氏温度DEHUMI DEHUMIDIFY 除湿DEION DEIONISER 脱离子剂DEL DELIVERY 交付DELE DELETE 删除DEMI DEMINERALISATION 除盐DEMI DEMINERALISING 去除矿物质DEMIN DEMINERALISED 除去矿物质的DEMIPL DEMINERALISATION PLANT除盐水装置DENS DENSITY 密度DEP DEPRESSION 低压DEPHLEG DEPHLEGMATOR 精溜器DESAL DESALINATION 脱盐作用DESAL DESALINATE 除去盐份DET DETECTION 检测DET DETECTOR 检测器DETN DETERMINATION 决心DEV DEVIATION 偏差DEVI DEVICE 装置,设备DFG DRY FLUE GAS 干烟气DFM DEFOAMER 除泡沫DFT DRAIN FLASH TANK 排放疏水箱DFTR DEFLECTOR 变流装置DGASF DEGASIFIER 消除毒气剂DIA DIAMETER 直径DIAG DIAGONAL 对角线;斜的DIAGR DIAGRAM 图表DIAPH DIAPHRAGM 横隔膜,控光装置DIAPH-V DIAPHRAGM VALVE 隔膜阀DIEL DIELECTRIC 电介质,绝缘体DIFF DIFFERENTIAL 微分的DIFF DIFFERENCE 差别,差异DIFN DIFFUSION 扩散DIG DIGITAL 数字的DIL DILUTED 稀释的,冲淡的DILN DILUTION 稀释DIM DIMENSION 外形尺寸DIO DIODE 二极管DIR DIRECT 直接的,径直的DIREN DIRECTION 方向DIRN DIRECTION 方向DIS DISCHARGE 排放;放电DISCON DISCONNECTED 分离的DISCON DISCONNECTION 断开DISCON DISCONNECT 拆分,分离DISCON DISCONNECTING 拆开,解脱DISCR DISCREPANCY 矛盾,差异DISOLV DISSOLVING 毁灭性的DISOLV DISSOLVED 溶解,解散DISP DISPLACEMENT 置换,转移DISPA DISPATCHING 发货;派遣DISPL DISPLAY 显示;陈列DIST DISTANCE 距离,间隔DISTB DISTURBED 扰乱的DISTILL DISTILLATE 蒸馏物DISTOR DISTORTION 扭曲,变形DISTR DISTRIBUTOR 发行人DISTR DISTRIBUTING 分配,分发DISTR DISTRIBUTION 分配,分发DIV DIVIDE 划分,分开DIV DIVISION 分开,区分DIVR DIVERTER 分流调节器DK DESK 桌,台DL DIAL 刻度盘DLCONVY DRAG LINK CONVEYOR 刮板式传送器,链板传送器DLD/COAL-TAR-F DISTILLED COAL TAR FUEL 蒸馏煤焦油燃料DLY DAILY 每天的DMP DUMP 倾倒,倾泄DMY DUMMY 虚拟的;假货DO DIFFUSION OPERATIONDOC DOCUMENT 文件DOM DOMESTIC 国内的DOOR DOOR 门DOS DOSING 加药DOTTED/LR DOTTED LINE RECORD 打点的线式记录DP DIFFERENTIAL PRESSURE 压差DPOI DEW POINT 露点DPTH DEPTH 深度DR DRIER 干燥剂DRM DRUM 汽包DRN DRAIN 疏水DRO DROP 水滴,滴DRV DRIVEN 受到驱动的DRV DRIVE 驱动DRVR DRIVER 驱动器DRY DRY 干燥DSC DISC 盘DSC-V DISC VALVE 盘阀DSIDE DISCHARGE SIDE 排放侧DSL DIESEL 柴油DST DUST 灰尘DS/HTG DESUPERHEATING 减温DS/HTR DESUPERHEATER 减温器DT DIFFERENTIAL TEMPERATURE 温差DTY DUTY 职责DUP DUPLEX 双方的DUP DUPLICATE 复制的,副的,两倍的DURN DURATION 持续时间DWG DRAWING 图纸DWL DOWEL 木钉DWP DRAIN WATER PUMP 疏水泵DY DELAY 推迟DYN DYNAMIC 动态的,动力的DYNM DYNAMOMETER 功率计,动力计D/A DEAERATOR 除氧器D/AST DEAERATOR STORAGE TANK 除氧器储存箱D/STR DOWNSTREAM 下游E ELECTRIC 电子的E ELECTRICAL(LY) 电气的(地),电的E-T/HTG E-TRACE HEATING 电加热器ECCY ECCENTRICITY 离心率ECON ECONOMIZER 省煤器ECP ELECTRO CLORINATION PLANT电子氯化装置EE ELECTRICAL END 电气端EFF EFFICIENCY 效率EFP ELECTRIC FEED PUMP 电子给水泵EFT EFFECT 效果,作用EFT EFFECTIVE 有效的EHC ELECTRO HYDRAULIC CONTROLLER 电液压控制器EHCV ELECTRO HYDRAULIC CONVERTER 电液压转换器EHG ELECTRO HYDRAULIC GOVERNOR 电液压调节器,电液压调速器EJEC EJECTION 喷出,排出物EJR EJECTOR 排除器ELAS ELASTICITY 弹性,弹力ELAS ELASTIC 弹性的ELCTD ELECTRODE 电极ELCTLT ELECTROLYTE 电解液,电解ELCTRN ELECTRON 电子ELEM ELEMENT 元素,元件ELEV ELEVATE 举起ELEV ELEVATION 海拔,正面图ELON ELONGATION 延长ELOP EMERGENCY LUB OIL PUMP 紧急润滑油泵ELT ELECTRONIC 电子的ELVTR ELEVATOR 升降机,电梯EM BRG O-PMP EMERGENCY BEARING OIL PUMP 紧急轴承油泵EMAG ELECTROMAGNETIC 电磁的EMC ENERGY MANAGEMENT CENTER 能源管理中心EMCFG ELECTRICAL MEASURINGCONFIGURATION 电气测量配置EMDG EMERGENCY DIESEL GENERATOR 紧急柴油发电机EMERGY EMERGENCY 紧急EMEXIT EMERGENCY EXIT 紧急出口EMTY EMPTY 空的ENAB ENABLING 使能够ENC ENCLOSE 围绕ENC ENCLOSURE 罩壳ENG ENGINE 发动机ENGY ENERGY 能量ENRGS ENERGISE 加强,给…电压ENRGS ENERGISED 通电的ENT ENTRANCE 入口ENT ENTRY 进入ENTH ENTHALPY 热函ENVRMT ENVIRONMENT(TAL) 环境(的)EOIL EMERGENCY OIL 紧急油EP EXTRACTION PUMP 抽气泵,排气泵EQL EQUALISER 均衡器,平衡装置EQL EQUALISING 平衡,补偿,调整EQL EQUALISE 使相等EQL EQUAL 相等的,等同的EQUIL EQUILIBRIUM 平衡,均衡EQUIP EQUIPMENT 设备EQUIV EQUIVALENT 相等的,等同的ERR ERROR 误差,错误ESC ESCAPE 逃脱;避免EST ESTIMATE(D) 评估,估计ESV EMERGENCY STOP VALVE 紧急关断阀ET EMERGENCY TRIP 紧急跳闸ETC ET CETERA 等等EVAC EVACUATION 排除,撤退EVAC EVACUATE 排泄,疏散EVAL EVALUATE 评价,估计EVAL EVALUATION 估价,评价EVAP EVAPORATION 蒸发EVAP EVAPORATOR 蒸发器,脱水器EX EXAMPLE 实例,例子EXAM EXAMINE 检查,调查EXAM EXAMINATION 检查,考试EXC EXCITATION 励磁EXCDD EXCEEDED 超越,超过EXCE EXCITER END 励磁机末端EXCH EXCHANGE 交换,调换EXCH EXCHANGER 交换器EXCL EXCLUDE 排除,除…以外EXCL EXCLUSION 排除,除外EXCSS EXCESS 超过,过度EXGU EXTINGUISHER 熄灭器,灭火器EXH EXHAUSTER 排气装置EXH EXHAUST 排气EXHD EXHAUST DUST 排气管道EXL EXTERNAL 外部的EXP EXPANSION 膨胀,扩充EXPLO EXPLOSION 爆炸EXR EXCITER 励磁机EXT EXTENSION 延长,扩展EXTI EXTINCTION 消失EXTN EXTRACTION 抽取,取出;萃取EXTR EXTRACTOR 抽汽器EXTRM EXTREME 特别的,极端的E/F EARTH FAULT 接地故障E/H ELECTRO HYDRAULIC 电液转换E/SW EARTHING SWITCH 接地开关F-B FEEDBACK 反馈F-C FLOW CONTROL 流量控制FAC FORCED AIR COOLING 强制空冷FACIL FACILITY 设施FAIL FAILED 出故障的,失败的FAIL FAILURE 故障FC FLUID COUPLING 液力联轴节FCD FORCED 强制的FCG FACING 保护面;镶边FD FORCED DRAFT 强迫通风FDLNE FEED LINEFDN FOUNDATION 基础FDPIP FEED PIPE 给水管FDR FEEDER 馈电线,传导线FEED FEED 送入FELD FIELD 现场,就地FELR FEELER 试探器FFW FIRE FIGHTING WATER 消防水FG FUEL GAS 可燃气体FGC FUNCTIONAL GROUP CONTROL 功能组控制FIG FIGURE 外形,轮廓FIGH FIGHTING 防止FIL FILLING 填充FIL FILL 填充FIR FIRE 火FIX FIXED 固定的FIX FIXING 固定,稳固FLD FLUID 液体FLEX FLEXIBLE 可变形的,柔韧性FLG FLANGE 法兰FLL FULL 满的FLM FLAME 火焰FLOC FLOCCULATION 絮凝,絮结产物FLOC FLOCCULATED 絮凝FLOC FLOCCULATORFLOW FLOW 流量FLP FLAP 薄片,口盖;振动FLR FILLER 漏斗FLSH FLASH 闪存FLT FAULT 故障FLTR FILTER 过滤器FLTY FAULTY 有故障的FLUGAS FLUE GAS 烟气FLUSH FLUSHING 清洗FLUSH FLUSH 冲洗FM FOAM 泡沫FN FAN 风扇FNL FINAL 最终的FO FUEL OIL 燃料油FORMA FORMATION 形成,构成FP FEED PUMP 给水泵FR FRONT 前面FRAC FRACTION 片段FREQ FREQUENCY 频率FRICT FRICTION 摩擦,摩擦力FRM FRAME 结构FS FUSE 保险丝FST FAST 迅速FSTNR FASTENER 扣件,纽扣,按钮FTOR FACTOR 因素,要素FU FUEL 燃料FULFLD FULFILLED 满足的,实现了的FUNCT FUNCTION 功能FUNCT FUNCTIONAL 功能的FUND FUNDAMENTAL 基础的,基本原则FURN FURNACE 炉子,熔炉FV FLASH VESSEL 闪蒸器FW FEED WATER 给水FWD FORWARD 向前的FWP FEEDWATER PUMP 给水泵FWT FEED WATER TANK 给水箱FXTR FIXTURE 固定设备,预定日期F/T FAULT/TRIP 故障/跳闸G GAGE 计量器G GAUGE 标准尺,量表GALV GALVANISE 电镀GALV GALVANIC 电流的,触电的GAS GAS 天然气GASF GASIFIER 气化器,气体发生器GAT GATE 大门GAT-V GATE VALVE 闸阀GBRG GEARBOX BEARING 变速箱轴承GD GRIDE 搽刮GDE GUIDE 领导,带领GDEVAN GUIDE VANE 导叶GEN GENERATOR 发电机GENBUS GENERATOR BUS 发电机母线GENE GENERATOR END 发电机末端GENL GENERAL 总的,概括的GFCHX GEN FORCED COOLING HEATEXCHANGER 发电机强冷热交换器GFCPP GENERATOR FORCED COOLINGPUMP 发电机强冷泵GL GLOBE 球体GLND GLAND 密封管GLS GLASS 玻璃GMTRY GEOMETRY 几何学GND GROUND 地面GOV GOVERNING 控制,管理GOV GOVERNOR 管理者GPH GRAPH 曲线图,图表GPH GRAPHIC 图解的GR GEAR 齿轮,传动装置GRA GRAPHITE 石墨GRAD GRADIENT 坡度,梯度GRAV GRAVEL 沙砾GRAVI GRAVITY 重力GRBXS GEAR BOX SIDE 齿轮箱侧GRD GRIND 磨,碾GRD GRINDING 磨的GRD GRINDER 磨工GRDTN GRADUATION 刻度,分等级GRP GROUP 组GRPG GROUPING 分组GRS GREASE 油脂GRT GROUTING 灌注浆GRT GROUT 水泥浆GRV GROOVE 凹槽GRVD GROOVED 开槽的GRWT GROSS WEIGHT 毛重GS GENERATOR SIDE 发电机侧GSA GENERAL SERVICE AIR 通用空气GSKT GASKET 垫圈GT GAS TURBINE 燃机GTB GAS TURBINE BUILDING 燃机房GTC GAS TURBINE CONTROLLER 燃机控制器GTE GRATE 炉GTG GAS TURBINE GENERATOR 燃机发电机GTY GANTRY 桶架GWH GIGAWATT-HOUR 十亿瓦特-小时GWTH GROWTH 生长,等比级数G/BOX GEARBOX 变速箱G/BOXS GEARBOX SIDE 变速箱侧H HIGH 高H-OIL HEAVY OIL 重油H2 HYDROGEN 氢气H2/S H2 SIDE 氢气侧HA HOT AIR 热空气HAS HARDWIRED ALARM SYSTEM 硬接线报警系统HD HEAD 头HD-O-DE HEAD OF DELIVERY 压力差HD-O-DE DELIVERY HEAD 水头,压力差HDL HANDLE 柄,把手;处理HDLG HANDLING 处理;操作的HDLS HEADLESS 无头的HDNS HARDNESS 硬度,难度HDR HEADER 连箱HDWHL HANDLWHEEL 手轮HEX HEXAGON 六角形,六边形HF-OIL HEAVY FUEL OIL 重燃油HG MERCURY 水银,汞HGT HEIGHT 高度HH HIGH HIGH 高高HK HOOK 钩HLDG HOLDING 持有HLDR HOLDER 支持物,固定器HLF HALF 一半HLL HALL 大厅HMNC HARMONIC 谐波;和谐的HNG HINGE 铰链HNG HINGED 装了铰链的HOG HOT GAS 热燃气HOL HOLLOW 洞,凹的HOR HORIZONTAL 水平的HOU HOUSE 房子,住宅HP HIGH PRESSURE 高压HPCP HIGH PRESSURE CIRCULATIONPUMP 高压循环泵HPFP HIGH PRESSURE FEED PUMP 高压给水泵HPPR HOPPER 储料器HPS HIGH PRESSURE STEAM 高压蒸汽HPT HIGH PRESSURE TURBINE 高压缸HRB HEAT RECOVERY BOILER 热回收锅炉HRSG HEAT RECOVERY STEAMGENERATOR 余热锅炉HS HEATING STEAM 热蒸汽HS-V HEAT STEAM VALVE 热蒸汽阀门HSG HOUSING 机架HSG-V HEAT STEAM GATE VALVE 热蒸汽闸阀HSPD HIGH SPEED 高速HST HOISTING 起重,提升HST HOIST 提升间HTEMP HIGH TEMPERATURE 高温HTG HEATING 加热HTN HIGH TENSION 高压HTR HEATER 加热器HUM HUMMING 发嗡嗡声(脉动、喘振)HUMID HUMIDITY 湿气,潮湿HUNT HUNTING 搜索HVDY HEAVY DUTY 重载,重型HVOLT HIGH VOLTAGE 高压HW HOTWELL 热井HX HEAT EXCHANGER 热交换器HYBR HYBRID 混合物HYD HYDRAULIC 液压的HYDR HYDRAZINE 联氨HYDRST HYDROSTATIC 静水利学的HYPO HYPOCHLORIC 次氯酸盐的H/A HAND/AUTO 手动/自动H/STEP HYDRASTEPI-V ISOLATING VALVE 隔离阀ID INDUCED DRAFT 进气通风IDC INDIVIDUAL DRIVE CONTROL 独立驱动控制IDFN INDUCED DRAUGHT FAN 进气引风机IDR INSIDE DIAMETER 内径IDX INDEX 指标IFO IN FRONT OF 在…之前IGN IGNITION 点火IGNTR IGNITOR 点火器IGV INLET GUIDE VANES 入口导页IMM IMMERSION 沉浸IMM IMMERSED 浸入的IMMED IMMEDIATE 直接的,紧接的IMP IMPULSE 推力IMPD IMPEDANCE 阻抗IMPLR IMPELLER 叶轮IMPT IMPACT 影响INBD INBOARD 在向内INC INCOMER 进来者INC INCOMING 引入的INCL INCLUSIVE 包含的,包括的INCLN INCLINE 倾斜,使倾向于INCLN INCLINATION 倾斜,倾向INCR INCREASE 增加,增大INCR INCREMENT 增加,增量IND INDICATOR 指示器IND INDICATION 指示,指出INDC INDUCTIVE 感应的INDC INDUCTION 感应,感应现象INDC INDUCTOR 感应器INDC INDUCED 导致的,感应的INDEP INDEPENDENT 独立的,不受约束的INDIV INDIVIDUAL 单独的INDR INDOOR 户内的INF INFINITE 无限的,无穷大INFD INFEED 横切INFL INFLOW 流入INFLL INFLAMMABLE 易燃的INFO INFORMATION 信息,资料INHER INHERENT 内在的,固有的INHIB INHIBITOR 抑制剂INIT INITIAL 初始的INIT INITIATION 开始INJ INJECTION 注射INL INLET 入口INP INPUT 输入INR INNER 内部的INRIA INERTIA 惯性,惯量INRT INERT 惰性的INR.B INNER BOTTOM 底部内侧INR.T INNER TOP 顶部内侧INS INSIDE 内部INSP INSPECTION 检查INSP INSPECT 检查INSRT INSERTED 插入的,附着的INSRT INSERTION 插入INSRT INSERT 插入,嵌入INST INSTANTANEOUS 瞬间的,即刻的INSTR INSTRUMENT 仪表,器具INSTR INSTRUMENTION 仪表INT INTEGRAL 完整的INT INTEGRATED 综合的,完整的INT INTEGRATION 综合INTCHG INTERCHANGEABLE 可互换的INTCHG INTERCHANGE 相互交换INTCLR INTERCOOLER 冷热气自动调节机INTCOM INTERCOMMUNICATION 交际INTCON INTERCONNECTING 互连INTCOV INTERCOVER 相互包含INTCPT INTERCEPT 截取INTCPT INTERCEPTOR 拦截机,截击机INTEN INTENSITY 强度,烈度INTFER INTERFERENCE 干扰,干涉INTGTR INTEGRATOR 综合者INTK INTAKE 入口,进口INTL INTERNAL 内在的INTM INTERMEDIATE 中间的INTPOS INTERPOSING 提出INTR INTERIOR 内部的INTRPT INTERRUPTION 中断INTRPT INTERRUPTING 中断的INTRPT INTERRUPT 打断,中断INTSCT INTERSECT 交叉INTSCT INTERSECTION 交叉点,交集INTST INTERSTAGE 级间的,级际的INTTRN INTERTURN 匝间的INV INVERTED 反向的INV INVERTER 变极器,反用换流器INVS INVERSE 反转的,倒转的ION ION 离子IPD ISOLATED PHASE BUSDUCT 隔离相母线管IR INFRA-RED 红外线IRREG IRREGULAR 不规则的ISEN ISENTROPIC 等熵的ISOL ISOLATING 绝缘的ISOLR ISOLATOR 绝缘体,隔音装置I&C INSTRUMENTATION AND CONTROL 仪器和控制I/F INTERFACE 接口I/L INTERLOCKING 联锁的I/L INTERLOCK 互锁I/MIT INTERMITTENT 间歇的JAMG JAMMING 干扰台JB JUNCTION BOX 接线盒JKT JACKET 护套JN JOIN 连接,连接点JNL JOURNAL 轴颈;日志,期刊JOG JOGGLE 啮合,啮合扣JT JOINT 接头,连接点JTY JETTY 码头JUNCT JUNCTION 接合,交叉点KBD KEYBOARD 键盘Key KeyDescription1 主要描述1 KEYSW KEY SWITCH 主要开关KPL KICKPLATE 踢板L LEVEL 水平,水平面L-C LEVEL- CONTROL 水平控制L-O LOCK OUT 锁住;把……关在外面LAB LABORATORY 实验室LAD LADDER 梯子LAG LAGGING 绝缘层材料LAGN LAGOON 环礁湖LATL LATERAL 侧面的LBL LABLE 标签LBR LUMBER 木材LBYR LABYRINTH 迷宫LCH LATCH 闭锁;门插销LCL LOCAL 当地的LCR LOCAL CONTROL ROOM 就地控制室LDG LOADING 装载LDS LEAD(S) 引导LEAKG LEAKAGE 泄露LFT LEFT 左侧的LG LENGTH 长度LGC LOGIC 逻辑LGE LARGE 巨大LGR LOGGER 运机;伐木工LGR LOGGING 采伐LH LEFT HAND 左手LHB LEFT HAND BOTTOM 左手底端LHT LEFT HAND TOP 左手顶部LIFT JACKINGLIFT LIFTING 起重LIN LINEAR 直线的LIOP JACKING OIL PUMP 顶轴油泵LIOP LIFTING OIL PUMP 提升油泵LIQ LIQUID 液体LIT LIGHT 轻的LITG LIGHTING 照明LITNG LIGHTNING 闪电LJUSTRM LJUNGSTROEM 辐流式LK LEAKING 泄露LK LEAK 泄露LKGE LINKAGE 联接LL LOW LEVEL 低位LLD LOW LOAD 低负荷LM LUMEN 流明LME LIME 石灰LMT LIMIT 限制,有限的LMT LIMITING 限制的LMT LIMITATION 限制,局限性LMTM LIMIT MONITOR 有限监控器LMTR LIMITER 限制器LNE LINE 线路LNG LONG 长LNGT LONG TIME 长时间LO LUBRICATING OIL 润滑油LOAD LOAD 荷载LOC LUBRICATING OIL COOLER 润滑油冷却器LOCK LOCKER 琐扣装置LONG LONGITUDINAL 纵向的LOP LUBE OIL PUMP 润滑油泵LOT LUBE OIL TANK 润滑油箱LOUV LOUVRE 天窗LOW LOW 低的LP LOW PRESSURE 低压LPCP LOW PRESSURE CIRCULATINGPUMP 低压循环泵LPFP LOW PRESSURE FEED PUMP 低压给水泵LPIP LOOP PIPE 回路管道LPS LOW PRESSURE STEAM 低压蒸汽LSPD LOW SPEED 低速LSS LOSS 损耗LT LAMP TEST 照明试验LUB LUBRICANT 润滑剂LUB LUBRICATING 润滑的LUB LUBRICATION 润滑油LUB CH LUBRICANT CHANGE 润滑剂变化LUM LUMINOUS 发光的LV LOW VOLTAGE 低压LVAC LOW VACUUM 低真空LVE LIVE 活的LVOLT LOW VOLTAGE 低压LWR LOWER 更低的LWRG LOWERING 降低的L/O LEAK-OFF 泄露M-V MODULATING VALVE 调幅阀MACH MACHINE 机械MAG MAGNETIC 磁的MAG MAGNET 磁铁MAGTD MAGNITUDE 数量,巨大MAIN MAIN 主要的MALF MALFUNCTION 故障MAN MANUALLY 手动地MAN MANUAL 手动,手册MANO MANOMETRIC 压力计的MANO MANOMETER 压力计MARG MARGIN 余量MARSG MARSHALLING 编组的MAX MAXIMUM 最大值MC MECHANICAL CONFIGURATION 机械配置MCB MINIATURE CIRCUIT BREAKER 微型断路器MCC MOTOR CONTROL CENTER 电机控制中心MCD MODULE CONTROL DESK 模块控制台MCP MODULE CONTROL PANEL 模块控制面板MCR MAXIMUM CONTINUOUS RATING 最大连续功率MDE MODE 模式MDE-O-DR MODE OF DRIVING 驱动模式MDE-O-OPR MODE OF OPERATION 运行模式MDN MEDIAN 中央的MEAS MEASURES 测量;措施MEAS MEASURING 测量MEAS MEASUREMENT 测量MECH MECHANICAL 机械的MED MEDIUM 中间的MET METERING 测量MF MINIMUM FLOW 最小流量MFC MINIMUM FLOW CONTROL 最小流量控制MFL MINIMUM FLOW LINE 最小流量线MFLD MANIFOLD 复印本MIC MICRO 微型的MID MIDDLE 中间MIN MINIMUM 最小值MINI MINIATURE 缩图;缩小的MISC MISCELLANEOUS 杂项ML MILL 工厂,压榨机MLOP MAIN LUBRICATING OIL PUMP 主要润滑油泵MLOT MAIN LUBRICATING OIL TANK 主要润滑油箱MOB MOBILE 可移动的MOD MODULE 模块MODG MODULATING 调整MODG-D MODULATING DAMPER 调节档板MODI MODIFIED 改进的MODI MODIFICATION 修改MODI MODIFY 修改MOIS MOISTURE 潮湿MOISG MOISTENING 润湿MON MONITORING 监控MON MONITOR 监控器MPSW MEASURING POINT SELECTORSWITCH 测量点选取开关MS MAIN STEAM 主蒸汽MSTR MASTER 主要的MTL METAL 金属MTN MOTION 动作MTR MOTOR 电动机MTY MULTY 多个MULT MULTIPLE 多样的MVBL MOVABLE 活动的MVG MOVING 移动MVT MOVEMENT 运动,移动MXD MIXED 混合,混合的MXG MIXING 混合MXT MIXTURE 混合物M/U MAKE-UP 补充N-COIN NON-COINCIDENCE 不一致NAOH CAUSTIC SODA 苛性钠NAR NARROW 狭窄的NAT NATURAL 自然的NB NOMINAL BORE 公称管径NBR NUMBER 数字ND NOMINAL DIAMETER 标称直径NDE NON-DRIVING END 非驱动端NDL NEEDLE 针NEC NECESSARY 必要的NEG NEGATIVE 负的,否定的NEUT NEUTRAL 中性的NEUTRALN NEUTRALISATION 中和,平衡NG NATURAL GAS 天然气NIP NIPPLE 螺纹接头;滑油嘴NLTC NO-LOAD TAP CHANGER 不带负荷的抽头变换器NO2 NITROGEN - DIOXIDE 二氧化氮NOM NOMINAL 名义上的NORM NORMAL 正常的,常规的NOT NOT 否NOX NITROGEN OXIDE 氮氧化物NOZ NOZZLE 喷嘴NP NOMINAL PRESSURE 标称压力NPSH NET POSITIVE SUCTION HEAD 净正吸入压头NR NON-RETURN 逆止的,止回的NRF NON-RETURN FLAP 止回口盖NRV NON-RETURN VALVE 止回阀NTH NORTH 北方的PL NOT COMPLETE 不完全的N.ON NOT ON 未启动N.OPEN NOT OPEN 未打开N.REGEN NOT REGENERATING 非再生的N/C NORMALLY CLOSED 正常关闭N/O NORMALLY OPEN 正常打开O-CLR OIL COOLER 油冷却器O-CP OIL COLLECTING PIT 油聚集坑O-PMP OIL PUMP 油泵O-TNK OIL TANK 油箱O-TRN OIL TURNERO-WST OILY WASTE 含油废物O2 OXYGEN 氧OA OVERALL 全部的,全面的OBL OBLIGATORY 必须的OCC OCCUPIED 占用OCC OCCUPATION 占有OD OUTSIDE DIAMETER 外径OFLTC OFF-LOAD TAP CHANGER 卸载抽头转换器OIL OIL 油OLC OPEN LOOP CONTROL 开环控制OLTC ON-LOAD TAP CHANGER 装载抽头转换器OP OPERATING 运行的OP OPERATION 运行OPERD OPERATED 运行的OPN OPEN 打开OPNG OPENING 开始的OPP OPPOSITE 相反的,对立的OPRL OPERATIONAL 运作的OPT OPTICAL 光学的OPTR OPERATOR 操作员ORD ORDER 次序;订购ORF ORIFICE 孔,口ORIG ORIGIN 起源ORIG ORIGINAL 原始的,最初的OSC OSCILLATOR 振荡器OSC OSCILLATE 振荡OSCGRM OSCILLOGRAM 示波器OT OUTLET TEMPERATURE 出口温度OTC OUTLET TEMPERATURECALCULATED 计算的出口温度OUT OUTLET 出口OUT OUTSIDE 外部的OUTDR OUTDOOR 户外OUTGG OUTGOING 输出的OUTR OUTER 外部OUTR.B OUTER BOTTOM 外底部OUTR.T OUTER TOP 外顶端OV OVER 超过OVAP OIL VAPOR EXTRACTOR 油蒸汽抽出器OVEREXC OVEREXCITATION 过激励OVTR OVERTRAVEL 超行程O/C OVERCURRENT 过电流O/C-S/C OVERCURRENT SHORT CIRCUIT 过电流短路O/FL OVERFLOW 溢出O/L OVERLOAD 超负荷O/P OUTPUT 出力,输出O/S OVERSPEED 超速P-BLOW PRESSURE BLOW 压力吹气P-C PRESSURE CONTROL 压力控制P-GRAD PRESSURE GRADIENT 压力梯度P-RATIO PRESSURE RATIO 压比P-V PILOT VALVE 控制阀PA PRIMARY AIR 初始空气PABL PRIMARY AIR BLOWER 初始鼓风机PACK PACKAGE 包PAF PRIMARY AIR FAN 主要换气扇PANT PANTOGRAPH 缩放仪PART PARTICLE 粒子,微粒PASS PASSAGE 通道PB PUSHBUTTON 按钮PC PRINTED CIRCUIT印制电路PCB PRINTED CIRCUIT BOARD 印制电路板PCC POWER CONTROL CENTER 电源控制中心PCE PIECE 块,件PD POND 池子PDSC POWER DISPATCH SYSTEM CENTER 配电系统中心PED PEDESTAL 基架,底座PEN PENETRATION 渗透PERD PERIODIC 定期的PERM PERMANENT 永久的,持久的PERMB PERMIABILITYPERP PERPENDICULAR 垂直的,垂线PF POWER FACTOR 功率因素PFE PROFILE 侧面,剖面PFL PULFERISED FUELPFM POWER FACTOR METER 功率因素测量计PG PURGE GAS 吹扫用的气体PGMT PIGMENT 色素PH PHASE 相,阶段PH-R PHASE R R相PH-S PHASE S S相PH-T PHASE T T相PHOS PHOSPHATE 磷酸盐PIP PIPING 管道PIP PIPE 管道PIP PIPELINE 管线PIST PISTON 活塞PIT PIT 坑PK PEAK 峰值PKT POCKET 口袋PL PLUNGER 活塞PLA PLATE 金属板PLATF PLATFORM 平台PLC PLACE 地方PLE POLE 柱;电极PLG PLUG 塞子;插入PLG-IN PLUG-IN 插入PLR PILLAR 柱子PLRTY POLARITY 极性PLS PULSE 脉冲PLSG PULSATING 跳动的PLT PILOT 导杆,控制器;导航员PLTG PLATING 电镀PM PERMANENT MAGNET 永久磁铁PMP PUMP 泵PNEU PNEUMATIC 汽动PNL PANEL 面板,盘PNT POINT 点PO PREMIX OPERATION 预混合运行POL POLISHING 磨光,抛光POLPHOSPH POLYPHOSPHATE 多磷酸盐PORT PORTABLE 手提的,轻便的POS POSITIVE 正的,正极的POSN POSITION 位置POSNR POSITIONER 远程位置调节器POSS POSSIBLE 可能的POT DRINKING 喝POT POTABLE 饮料POTI POTENTIAL 潜在的;电压POTI POTENTIOMETER 电位计,分压计PR PAIR 一对PRB PROBE 探针,探测器PRCN PRECISION 精确度PRECIP PRECIPITATOR 沉淀剂PRECT PRECOAT 滤料层PREM PREMIX 预混合料PREP PREPARED 准备好的PREP PREPARATION 准备PRES PRESSURE 压力PRF PROOF 防……的,有耐力的PRFM PERFORMANCE 性能PRGG PURGING 清洗PRGM PROGRAM 程序PRI PRIMARY 主要的,初始的PRMG PRIMING 雷管,底漆PRMTR PARAMETER 参数PROBY PROBABILITY 可能性PROC PROCESSOR 处理机PROC PROCESSING 处理PROC PROCESS 过程PROJ PROJECT 项目PROPN PROPORTION 比例PROPN PROPORTIONAL 成比例的,想称的PROT PROTECTION 保护PROT PROTECTING 保护PROT PROTECTIVE 保护的PRSD PRESSED 加压的,压制的PRT PART 部分PRT PARTIAL 部分的,局部的PRTR PRINTER 打印机PS PUMP SIDE 泵侧PSIG PRESSURE ABOVE ATMOSPHERE 高于大气压力PSS POWER SYSTEM STABILISER 电力系统稳定器PT PLANT 电厂PTN PARTITION 划分,区分PUB PUBLIC 公共的PUL PULL 拖,拉PULV PULFERISERPULV PULFERISEDPULV PULFERISINGPULY PULLEY 滑车,滑轮PUR PURITY 纯度PURIF PURIFICATION 净化PURIF PURIFIER 清洁器PW PRIMARY WATER 初级水PWDR POWDER 粉末PWR POWER 功率,电P/HTR PREHEATER 预热器QCK QUICK 迅速的QTC QUARTZ (CRYSTAL) 石英(晶体)QTR QUARTER 四分之一QTY QUANTITY 数量R RIGHT 右;正确R-V REGULATING VALVE 调节阀RA RATE 比率;等级RAD RADIAL 半径的;光线RADN RADIATION 辐射,发散RAP RAPPING 轻击修光(锻造中)RAW RAW 原始的RC REINFORCED CONCRETE 钢筋混凝土RCPT RECEIPT 收据;收到RCTN REACTION 反应RCV RECEIVED 收到的RCV RECEIVING 接受的RCVR RECEIVER 接受者,接收器RCVY RECOVERY 恢复,回收RDCN REDUCTION 减少RDDCY REDUNDANCY 冗余RDY READY 有准备的RE REFRACTORY 难控制的REAC REACTANCE 电抗REAC REACTOR 反应堆REACT REACTIVATION 再生,再激活REACT REACTIVE 反应的;电抗性的REC RECORDING 记录的REC RECORDER 记录器RECIP RECIPROCATE 互给,互换RECLMR RECLAIMER 回收程序RECLR RECOOLER 再冷却器RECT RECTIFIER 整流器RECTA RECTANGULAR 矩形的RECTA RECTANGLE 矩形RED REDUCING 减少RED REDUCE 减少RED REDUCER 减压器;还原剂REDU REDUCTING 还原REF REFERENCE 参考,涉及REFGT REFRIGERANT 制冷的;制冷剂REFL REFLECTOR 反射镜REFRD REFRIGERATED 冷冻的,冷却的REG REGULATING 调节REG REGULATOR 调整器REG REGULATE 调节REGEN REGENERATING 再生的REGEN REGENERATION 再生REGR REGENERATOR 再生器REGST REGISTER 记录,登记REGST REGISTRATION 注册,登记REHT REHEAT 再热REHTR REHEATER 再热器REJ REJECTION 拒绝REL RELATIVE 相关的RELBL RELIABILITY 可靠性RELBL RELIABLE 可靠的RELS RELEASE 释放,免除REM REMOTE 远方的,遥远的REMA REMOTE ACTUATION 远方执行REMV REMOVE 移动,迁移REMV REMOVABLE 抽取式的,可移动的REMV REMOVAL 移动,切除RES RESISTOR 电阻器RES RESISTANCE 电阻,阻抗RES RESISTANT 抵抗的RESDL RESIDUAL 剩余的,残留的RESOLN RESOLUTION 决定,决议RESTRIC RESTRICTED 有限的RETN RETURN 返回RETRAC RETRACTED 取消的RETRAC RETRACTABLE 可收回的REV REVISION 修订REV REVICE 修订REVO REVOLUTION 旋转;革命REW REVIEW 回顾,评论RF RAISED FACE (FLANGE) 光滑式密封面(法兰)RFO READY FOR OPERATION 准备运行RGD RIGID 刚性的RGH ROUGH 粗略的RH RIGHT HAND 后手RHB RIGHT HAND BOTTOM 右手底部。

FS2115B夸克微芯片规格书

FS2115B夸克微芯片规格书

F e a t u r e sFixed 5V ± 4% OutputVIN Range: 2.5V to 5VOutput Current: Up to 250mAConstant Frequency Operation at All Loads Low Noise Constant Frequency (400kHz) OperationAutomatic Soft-Start Reduces Inrush CurrentShutdown Current <1µAShort-Circuit ProtectionNo InductorsAvailable in Low Profile 6-Lead SOT23 PackageA p p l i c a t i o nWhite LED BacklightingLi-Ion Battery Backup SuppliesLocal 3V to 5V ConversionSmart Card ReadersPCMCIA Local 5V Supplies D e s c r i p t i o nThe FS2115B is a low noise, constant frequency (400kHz) switched capacitor voltage doubler. It produce a regulated output voltage from a 2.5V to 4.5V input with up to 250mA of output current. Low external parts count (one flying capacitor and two small bypass capacitors at VIN and VOUT) make the FS2115B ideally suited for small, battery-powered applications.A new charge-pump architecture maintains constant switching frequency to zero load and reduces both output and input ripple. The FS2115B have thermal shutdown capability and can survive a continuous short circuit from VOUT to GND. Built-in soft-start circuitry prevents excessive inrush current during start-up.High switching frequency enables the use of small ceramic capacitors. A low current shutdown feature disconnects the load from VIN and reduces quiescent current to <1uA.The FS2115B is available in the industry standard SOT-23-6 power packages.T y p i c a l A p p l i c a t i o n sFigure 1: Regulated 5V Output Figure 2: USB Port to Regulated 5V Power SupplyFigure 3: Lithium-Ion Battery to 5V White or Blue LED DriversP i n D e s c r i p t i o nPIN NUMBER SOT-23-6PIN NAME 1 VOUT 2 GND 3 EN 4 C- 5 VIN 6C+FS2115B夸克微原厂技术支持A b s o l u t e M a x i m u m R a t i n g s (Note 1)V IN ……………………………….…………………………….…….….…..….………- 0.3V to 6V V OUT ………………………………………………………………………………….….- 0.3V to 5.5V VOUT Short-circuit Duration.…………………………………………..….………………indefinite V EN ……………………………………………………...…………………….…...……- 0.3V to 6V IOUT (Note 2) …………………….................................………………………...................... 300mA Operating Temperature Range (Note 3)……………………………………………...……- 30℃ to 85℃ Lead Temperature (Soldering 10 sec.) ……………………………………..………………300℃ Storage Temperature Range ………………………………………………..…..- 65℃ to 125℃Note 1: Absolute Maximum Ratings are those values beyond which the life of a device may be impaired. Note 2: Based on long term current density limitations.Note 3: The FS2115B are guaranteed to meet performance speci fications from 0°C to 70°C. Specifications over the –40°C to 85°C operating temperature range are assured by design, characterization and correlation with statistical process controls.E l e c t r i c a l C h a r a c t e r i s t i c sThe specifications are at TA = 25 ℃. EN= V IN , C IN =C OUT =2.2uF unless otherwise noted. * EFFI = [(Output Voltage × Output Current) / (Input Voltage × Input Current)] × 100%PARAMETERC O ND I T I O N S MIN TYP MAX UNITS Input Voltage Range (V IN )2.55.5 V Output Voltage Range (V OUT ) 2.7V <V IN < 5.5V, I OUT < 65mA 4.7 5 5.2 VI SHDN Shutdown Current EN=0V,V OUT = 0V 0.3 µA No load input current I OUT = 0mA, V IN = 2.7V 0.65 mA Output current limit250 mA Output Ripple (VR) V IN = 2.7V , I OUT = 100mA 150 mVP-P EfficiencyV IN = 2.7V, I OUT =100mA 81 %Open-Loop Output Resistance R OL =(2V IN -V OUT )/I OUTV IN = 2.7V, I OUT = 100mA 4 Ω Switching Frequency ( f osc )400kHzFS2115B夸克微原厂技术支持FS2115B T y p i c a l P e r f o r m a n c e C h a r a c t e r i s t i c sVOUT Soft-Start Ramp (VIN=3V)P i n F u n c t i o n sVOUT (Pin 1): Regulated Output Voltage. VOUT should be bypassed with a low ESR ceramic capacitor providing at least 2µF of capacitance as close to the pin as possible for best performance.GND (Pin 2): Ground. These pins should be tied to a ground plane for best performance. The exposed pad must be soldered to PCB ground to provide electrical contact and optimum thermal performance. EN (Pin 3): Active Low Shutdown Input. This pin must not be allowed to float. C- (Pin 4): Flying Capacitor Negative Terminal.VIN (Pin 5): Input Supply Voltage. VIN should be bypassed with a 1µF to 4.7µF low impedance ceramic capacitor.C+ (Pin 6): Flying Capacitor Positive Terminal.FS2115BFS2115B A p p l i c a t i o n I n f o r m a t i o nOperationThe FS2115B use a switched capacitor charge pump to boost VIN to a regulated output voltage. Regulation is achieved by sensing the output voltage through an internal resistor divider and modulating the charge pump output current based on the error signal. A 2-phase nonoverlapping clock activates the charge pump switches. The flying capacitor is charged from VIN on the first phase of the clock. On the second phase of the clock it is stacked in series with VIN and connected to VOUT. This sequence of charging and discharging the flying capacitor continues at a free running frequency of 0.4MHz (typ).In shutdown mode all circuitry is turned off and the FS2115B draw only leakage current from the VIN supply. Furthermore, VOUT is disconnected from VIN. The EN pin is a CMOS input with a threshold voltage of approximately 0.8V. The FS2115B is in shutd own when a logic low is applied to the EN pin. Since the EN pin is a high impedance CMOS input it should never be allowed to float. To ensure that its state is defined it must always be driven with a valid logic level.Short-Circuit ProtectionThe FS2115B have built-in short-circuit current limitin g. During short-circuit conditions, they will automatically limit their output current to approximately 200mA.Soft-StartThe FS2115B have built-in soft-start circuitry to prevent excessive current flow at VIN during start-up. The soft-start time is preprogrammed to approximately 1ms, so the start-up current will be primarily dependent upon the output capacitor.VIN, VOUT Capacitor SelectionThe style and value of capacitors used with the FS2115B d etermine several important parameters suchas regulator control loop stability, output ripple, charge pump strength and minimum start-up time.To reduce noise and ripple, it is recommended that low ESR (< 0.1Ω) ceramic capacitors be used for both CIN and COUT. These capacitors should be 0.47uF or greater. Tantalum and aluminum capacitors are not recommended because of their high ESR.The value of COUT directly controls the amount of output ripple for a given load current. Increasing the size of COUT will reduce the output ripple at the expense of higher minimum turn on time and higher start-up current. The peak-to-peak output ripple is approximately given by the expression:Where f OSC is the FS2115B oscillator frequency (typically 0.4MHz) a nd COUT is the output charge storage capacitor.FS2115B Both the style and value of the output capacitor can significantly affect the stability of the FS2115B. The FS2115B use a linear control loop to adjust the stren gth of the charge pump to match the current required at the output. The error signal of this loop is stored directly on the output charge storage capacitor. The charge storage capacitor also serves to form the dominant pole for the control loop. To prevent ringing or instability on the FS2115B it is important for the output capacitor to maintain at least 0.47uF of capacitance over all conditions.Likewise excessive ESR on the output capacitor will tend to degrade the loop stability of theFS2115B Ceramic capacitors typically have exceptional ESR performance and combined with a tight board layout should yield very good stability and load transient performance.As the value of COUT controls the amount of output ripple, the value of CIN controls the amount of ripple present at the input pin (VIN). The input current to the FS2115B will be relatively constant while t he charge pump is on either the input charging phase or the output charging phase but will drop to zero during the clock nonoverlap times. Since the nonoverlap time is small (~25ns), these missing “notches” will result in only a small perturbation on the input power supply line. Note that a higher ESR capacitor such as tantalum will have higher input noise due to the input current change times the ESR. Therefore ceramic capacitors are again recommended for their exceptional ESR performance.Flying Capacitor SelectionWarning: A polarized capacitor such as tantalum or aluminum should never be used for the flying capacitor since its voltage can reverse upon start-up of the FS2115B. Low ESR ceramic capacitors should always be used for the flying capacitor.The flying capacitor controls the strength of the charge pump. In order to achieve the rated output current it is necessary to have at least 0.68uF of capacitance for the flying capacitor.For very light load applications the flying capacitor may be reduced to save space or cost. The theoretical minimum output resistance of a voltage doubling charge pump is given by:Where f OSC is the switching frequency (0.4Hz typ) and CFLY is the value of the flying capacitor. The charge pump will typically be weaker than the theoretical limit due to additional switch resistance, however for very light load applications the above expression can be used as a guideline in determininga starting capacitor value.Power EfficiencyThe power efficiency of the FS2115B is similar to that of a linear regulator with an effective input voltageof twice the actual input voltage. This occurs because the input current for a voltage doubling charge pump is approximately twice the output current. In an ideal regulating voltage doubler the power efficiency would be given by:FS2115BAt moderate to high output power the switching losses and quiescent current of the FS2115B are negligible and the expression above is valid. For example with VIN = 3V, IOUT = 50mA and VOUT =5V the measured efficiency is 80% which is in close agreement with the theoretical 83.3% calculation.Layout ConsiderationsDue to its high switching frequency and the high transient currents produced by the FS2115B, careful board layout is necessary. A true ground plane and short connections to all capacitors will improve performance and ensure proper regulation under all conditions. Figure 4 shows an example layout for the FS2115B.Figure 4: Recommended LayoutP a c k a g i n g I n f o r m a t i o nSOT-23-6 Package Outline DimensionDimensions In Millimeters Dimensions In Inches SymbolMin Max Min MaxA 1.050 1.250 0.041 0.049A1 0.000 0.100 0.000 0.004 A2 1.050 1.150 0.041 0.045b 0.300 0.500 0.012 0.020c 0.100 0.200 0.004 0.008D 2.820 3.020 0.111 0.119E 1.500 1.700 0.059 0.067E1 2.650 2.950 0.104 0.116e 0.950(BSC) 0.037(BSC)e1 1.800 2.000 0.071 0.079 L 0.300 0.600 0.012 0.024 θ0°8°0°8°FS2115B。

Capacitors

Capacitors

CapacitorsCapacitorsThere seems to be a lot of hype and mystery concerning the sound of capacitors, the quality of capacitors and what capacitors actually do in a circuit. There are many types of capacitors including ceramic, polyester, polypropylene, polycarbonate silver mica, tantalum and electrolytic. Each has its own area of “expertise”. One type of capacitor will perform well in a particular application and perform poorly in another. A capacitor is simply two metal plates separated by a dielectric. An electrical charge is stored between these two plates. The plates and dielectric can be made form several different types of material. The closer the plates are, the higher the capacitance and the larger the area of the plates, the larger the capacitance. The dielectric material affects the capacitance as well. Here is some brief information about the particular types.Note: The unit of capacitance is the Farad. It is a very large unit and so we use the following to express capacitanceMicrofarad is one millionth of a farad.Picofarad is one millionth of a microfaradSo 0.001mfd is equal to 1000 picofarad (pF)The above diagram shows a simple representation of a capacitor.RED.The capacitor is shown in REDIns--Res of the insulation. Teflon has In parallel with the plates of the capacitor is a resistance, Insthe highest resistance with polystyrene, polypropylene and polycarbonate coming in second. Third is polyester and then the ceramics COG, Z5U and XR7 with tantalum and aluminium last.Dap is the Dielectric Absorption. All capacitors when charged to a particular voltage and then the leads are shorted, will recover some of their charge after the short is removed. The ratio ofthe initial voltage to the recovered voltage is expressed as a percentage. In general, electrolytics are the worst and film types are the best.The series inductance is shown simply in series with the capacitor itself. Electrolytics have the highest inductance mainly due to how the capacitor is made. The higher the frequency the higher this inductance becomes.ESR of the capacitor is the resistance that appears in series with the actual capacitor. The ESRThe higher the voltage and value the lower the ESR. This resistance is made up of dielectric loss, lead termination resistance and the electrode resistance. This is nearly constant with frequency.The dissipation factor or DF is the ratio of ESR divided by the capacitive reactance(Xc) which is given by this formula (Xc = 1/6.28 x F x C) where F is frequency and C is the value in Farads. Normally of course we have values in “Mfd” and so the the value of C can be in Mfd and then the numerator becomes 1,000,000 instead of just 1.Ceramic capacitors are used in high frequency circuits such as RF. They are also the bestthe bestthe best choice for high frequency compensation in audio circuits. Now some may snub their noses when hearing this. We used to manufacture some high end amps for a Japanese company and they demanded that NO ceramics be used in the amplifiers. Pretty much all amplifiers have some sort of high frequency compensation to prevent them from oscillating and instability. The frequency at which these ceramics were doing their work was at 240KHz. Now I do not know about all of you out there but my hearing does not go out THAT high. Maybe these guys were distant relatives of the bat!They come in values from a few picofarads to 1 microfarad. The voltage range is from a few volts up to many thousands of volts. Ceramics are inexpensive to manufacture and they come with several dielectric types. Types XR7 and Z5U are the least stable as far as temperature is concerned. They have a higher dielectric constant than the higher stability types like COG. The tolerance of ceramics is not great but for their intended role in life they work just fine.Tantalum capacitors are made by depositing a film of oxide on tantalum. These are polarized types and are smaller than their aluminium counterparts. They are low voltage types only with a maximum rating of about 40 volts. We at zed do NOT use these as they are notoriously unreliable. They have a bad tendency to go leaky. I will NEVER EVER use a tantalum capacitor as they are so unreliable and my experience many years ago bears that out.Aluminium Electrolytic capacitors are made by depositing a film of oxide on aluminium foil. The foil is formed for a specific voltage rating. These are polarized and of courser do not tolerate having reverse voltage applied to them. (Anyone been around when one of these larger value babies explodes – it is not a pretty sight?) They are also not happy campers if the rated voltage is exceeded (same thing, they will make a mess of the equipment and your face if you are too close) BUT higher quality types will tolerate about 5% over voltage. What happens in these capacitors that if one applies say 37 volts to a 35 volt capacitor it will actually reform its foil over time to the new applied voltage but its value will drop to keep CV a constant. Conversely if a lower voltage is applied it will reform to this new voltage and the capacitance will increase. Now do not get all excited and take your 10,000mfd 50v capacitor and use it at 25 volts and expect to get 20,000mfd out of it. There are limits to what these guys will do. It is also not a great idea to run electrolytics at voltages well below their rated voltage. A rule of thumb is about 25% lower voltage than rated is OK. They are normally madeby winding the foils around in each other in a cylindrical way. High capacitance is easily obtained.The ESR is the Equivalent Series Resistance and the higher the value and voltage the lower the ESR. The lower the ESR the less heat the capacitor will generate when current is drawn from it. Also closely related to the ESR is the available ripple current that a capacitor can tolerate. This is mainly of concern in power supplies. Most manufacturers offer many grades and sizes of electrolytic capacitors. There are of course both through hole and surface mount types. Within each category there are sub categories. Through hole types offer many more variations than surface mount. There are 85 deg C and 105 deg C versions leaded, snap in and screw type terminations. Electrolytics, especially those used in high current power supplies have a fixed lifespan and once a electrolytic decides it is tired of living, then it is off to “the pie in the sky”. Typically their life span is from 1,000 to 3,000 hours depending on the quality.Their tolerance is not good but then again a low tolerance component is not essential. Typically the value can vary from -50% to +100% of the nominal value.There are non-polar electrolytics and these are mainly used in passive speaker crossovers.Silver Mica Capacitors are one of the best types of capacitors. They have excellent stability and are available in low tolerance values down to less than 0.1%. They ARE sensitive to heat and are now used mainly in RF and tuned circuits. I like them in RIAA preamplifiers as I think they do sound better in that application.Film capacitors encompass polyester, polypropylene, polycarbonate and others. Each has its own strengths and weakness. These are normally used in audio for filters, equalizers and power supply bypass duty. They are available in almost any value and voltages as high as1,500 volts. They come in any tolerance from 10% to 0.01%.Well now that you almost know all there is to know about capacitors (Only kidding) it is time to discuss how they sound and why we use certain types in particular applications.Power supplies generally demand the use of electrolytic capacitors because they have high values in small packages. The value is determined by how much ripple can be tolerated and the voltage is determined by the voltage of the power supply (Duh!). Because this type of capacitor has inductance, it is normal practice to bypass them with film type capacitors in order to improve the high frequency characteristics. In 50/60Hz supplies I have never found these bypass film capacitors do anything to improve the sound.Coupling capacitors are usually electrolytic (Yes this is not a typo error) and film types. The value of the coupling capacitor is usually determined by the load impedance which the capacitor “sees”. If the value is too small for a given load impedance then the low frequencies will be attenuated at a rate of 6dB/octave.C (mfd)Vin = 1v Vout10K o h m Let us examine the circuit above. The capacitor has a reactance which forms a potentialdivided with the 10K ohm resistor. This circuit may represent the coupling of one circuit block delivering “Vin” at 1 volt to another circuit block shown as “Vout”. We can consider thecapacitor as a resistor whose value changes with frequency which is really its reactance (Xc).So the formula for Vout is [Vout/Vin = 10,000/10,000+Xc] and [Xc = 1/6.28xFxC]We can now throw some numbers into our formulas and see what comes out. Let us pick a frequency of say 1KHz and a capacitor value of 0.22mfd as a first example. Solving for Xc we get Xc = 723 ohms. Solving for Vout we get 0.932 volt. This means that at a frequency of 1KHz a 0.22mfd capacitor will cause the output voltage to drop to 0.932 (a 0.61dB drop). The frequency at which Xc = 10K ohm is 72.37Hz (I simply solved for F in the formula above)(I simply solved for F in the formula above)As a coupling capacitor in a full range circuit the 0.22mfd is clearly inadequate since it rolls off the response from over 1KHz and is 3dB down at 72.37Hz. What do we do to calculate the value of C which will allow decent low end response? We shall pick a frequency at which we want the signal level at Vout to drop to -3dB as low as we desire. We shall choose 2Hz. Solving again for C in the Xc formula above we get 7.96mfd. We would then use a 10mfd. This 10mfd can be a regular polarized electrolytic, two electrolytic capacitors wired back to back with common polarity terminals joined, a non-polar version or a film type. The film type will be large and expensive. In op-amp circuits where the DC supplies are less than 20 volts, a film type rated at 25 or 63v is not that large. In tube circuits however where there arehundreds of volts, a 10mfd 450v capacitor is a large specimen. At Zed we go one step further and increase the value fivefold so the -3dB break frequency goes down well below 1Hz. My opinion is that if the value of the capacitor is so large so as to make a break point well below 1Hz the electrolytic capacitor does not degrade the sound.An amusing story: About 14 years ago Zed Audio was building subwoofer amplifiers for a large well known speaker company in Chatsworth California. One of the projects involved a high pass active preamplifier whose output was to be 6dB/octave high pass crossover (same as the circuit above) with some simple elegant electronics. The BIG question came up from management and sound gurus whether one could tell the difference between various high quality film capacitors. I said “no” and I got hammered for this comment. I set up a test where I said they could not even hear a cheap electrolytic, never mind a film type. “You are crazy, full of you know what” were some of the comments I received. So we set up a double blind test. We had a fancy turntable, Audio Research tube preamplifiers and power amplifiers, speaker cable as thick as your arm and all the other high end toys needed for a sound system.Between the preamplifier and power amplifier a two pole switch was inserted and the switch was to select either a dead short or this one penny electrolytic capacitor. I soldered the capacitor to the switch but unbeknownst unbeknownst unbeknownst to the audio boffins, I wired a short across the short across the short across the capacitorcapacitor so in either switch position they were listening to the same thing – a dead short, a piece of wire! This was going to be fun – I knew that.The gurus put their favourite album on the turntable and away we went. One of their technicians was flipping the switch at the listeners’ command. Back and forth we went for over ten minutes with all saying “Yes that’s the capacitor, no that’s the wire”. So we stopped and I called all these gurus over to the switch and showed them the dead short across the capacitor. Red faces, curses etc and I was a bad boy and they were fools. Most of thishave to hear the difference after you have spent “component” sound is in one’s head. You have tohave to$55.00 on your new coupling capacitors!Power supply bypass capacitors are sometimes required in low level circuits. These should be a pair of ceramic capacitors (Yes ceramic as they perform best at high frequencies) placed as close to the power supply pins of the integrated circuit or discrete circuit block and some electrolytic capacitors placed reasonably close. Film capacitors will work fine but as they are more expensive than their ceramic counterparts I see no reason to use them. Switching power supplies require the use of either low ESR capacitors or a larger quantity of “regular” ESR capacitors. It makes absolutely no difference which method is employed as long as the final ESR and ripple values are arrived at.High frequency compensation capacitors in audio circuits always operate at very high frequencies. In our opinion the best type to use are ceramic capacitors. Some disagree and claim that film types are better. Since these compensation capacitors are used to roll off extremely high frequencies I seriously doubt that one could hear the difference. Unless you are of course a relative of our beloved little bats.Listening to different capacitors is a time consuming. In order to compare two different types of say coupling capacitors in an audio circuit requires that you install the two types and a double pole double throw switch (DPDT) so that a direct A-B comparison may be done. The switch should be a gold plated low contact resistance type. Ideally you must install the switch at the point in the circuit where the capacitors live. This may sometimes be difficult to do because it may not always be simple to solder in the parts. The “crook” method is to do the switching between two pieces of equipment like a head unit or preamplifier and the power amplifier. The simple circuit is shown below with only one channel shown for clarity.The two capacitors marked C1 and C2 are to be compared. The double pole double throw switch (DPDT) is toggled between the two capacitors. The Resistor shown as “x” ohm is what the capacitors “see” as their load impedance and this resistor is normally the input resistor of the next circuit block or equipment.Copyright Information – This document including all text, diagrams and pictures, is the property of Zed Audio Corporation and is Copyright © 2005.。

A Fast Self-Reacting Capacitor-less Low-Dropout Regulator

A Fast Self-Reacting Capacitor-less Low-Dropout Regulator

A Fast Self-Reacting Capacitor-lessLow-Dropout RegulatorChia-Min Chen and Chung-Chih HungDepartment of Electrical Engineering, National Chiao Tung University, Hsinchu, TaiwanAbstract —A fast self-reacting (FSR) low-dropout (LDO) regulator with triple transient improved loops was implemented in 0.35μm CMOS technology. The proposed regulator for SoC application can achieve high stability for load current from zero to 100mA. The FSR loops can accelerate load transient responses while the regulator achieves the FOM of only 0.00675 (ps) without an output capacitor. The experimental results show the load regulation of 75.2 μV/mA and line regulation of 1.046 mV/V. The whole LDO chip consumes a quiescent current of 27 μA with an ultra low dropout voltage of 142mV at the maximum output current of 100mA. The proposed FSR transient improved loops can effectively reduce the transient voltage undershoot and overshoot. While the load current switches between 0 and 100 mA with both rise and fall time of 1 μs, the result shows that the maximum undershoot is 25 mV and that the maximum overshoot is 5 mV. When the full load current is 100mA, the undershoot and the overshoot of the line transient response are 4 mV and 6.5mV, respectively, for a 1 V step supply waveform with 5 μs transient time.I. I NTRODUCTIONIn the SoC applications, many systems integrate various types of circuit blocks, such as digital, analog, and/or radio-frequency blocks. Charge pump regulators are usually utilized to generate high voltage for lighting or memory units, switching converter are employed to regulate digital blocks due to their high power efficiency, and low-dropout (LDO) regulators are used to provide low noise supply voltage with very low ripple for noise sensitive blocks like analog/RF circuits [1]. Among all types of the voltage regulators, the LDO regulator is regarded as a suitable choice for local on-chip voltage regulation in system-on-a-chip (SoC) and system-in-a-package (SIP) due to its advantages of low quiescent current, clean output voltage, and small area [2,3].Researchers have proposed several capacitor-less LDO regulators for embedding on chip. One solution is an ultra-fast load-transient LDO regulator that uses an on-chip decoupling capacitor of 600pF [4], which consumes large silicon areas and is undoubtedly an obstacle to SoC development [5]. Other approaches include pole-zero cancellation, an NMOS-based power stage, and a flipped voltage follower architecture. The regulation accuracy and the loop phase margin of the LDO regulator are usually design trade-offs. The pole-zero cancellation can achieve both high loop gain and phase margin. However, it usually suffers from slow transient responses and requires small load current flow (generally hundreds of μA to several mA) to maintain the system stability [6,7]. The flippedvoltage follower architecture often suffers from low loop gainFig. 1. Low-dropout regulator with fast self-reacting (FSR) technique. and requires a much larger power transistor to provide sufficient output current for specification [8,9].This paper presents a low-dropout architecture with fast self-reacting technique targeted for SoC application. The block diagram of the proposed LDO regulator with FSR technique is shown in Fig. 1. The key features of the LDO regulator are ultra fast load transient responses, high loop gain (high resolution accuracy), very low quiescent current, and small on-chip compensation capacitance while without output capacitor still maintaining high stability for even fully zero load current. The paper is organized as follows: Section II presents the topology and schematic of the proposed FSR LDO regulator. Also, the stability analysis and frequency compensation are described in Section II. Section III presents experimental results, and Section IV provides a comparison table and conclusion. II.P ROPOSED F AST S ELF -R EACTING LDO R EGULATORA. Principle of Operation for Fast Self-Reacting Technique Figure 2 illustrates the proposed FSR LDO regulator, which includes one main feedback loop and three ultra fast self-reacting paths. Transistors M 17-M 20 and M PW form the first self-reacting path. When load current increases instantly, this leads to a decrease in the output voltage. Since I M19 is constant bias current and hence V SG18 is also a constant, a decrease in voltage V S18 (V OUT ) decreases the gate voltage of transistor M 17 and increases the operation current of M 17. As a result, the gate voltage of power transistor M PW quickly falls down to pull up output voltage. Transistors M 16-M 20, C m2, and M PW form the second self-reacting path. When the load current increasesFig. 2. Circuitry of the FSR LDO regulator with feedback loop and fast self-reacting loop.instantly, this leads to a decreases in the output voltage. In the meantime, the loop makes small increase on voltage V GS20 and this small voltage increase couples through capacitor C m2 to drive the gate of transistor M 16, so it increases the operation current of transistor M 16. As a result, the gate voltage of power transistor M PW also falls down quickly. Transistors M 11-M 16, M PW , and feedback resistors R FB1-R FB2 form the third self-reacting path. Transistors M 11-M 15 constitute an error amplifier (A 5). When load current increases instantly, the output voltage decreases accordingly. The output voltage of the error amplifier A 5 then generates small voltage increase, and increases the operation current of transistor M 16. As a result, the gate voltage of power transistor M PW decreases. The three ultra fast self-reacting paths described above can drive the power transistor to quickly recover the output voltage to the regulated value.B. Frequency Response and Compensation Methodology Figure 3 shows the block diagram of the proposed FSR LDO regulator. Error amplifiers A 1 and A 2, power transistor M PW , and feedback resistors (R FB1 and R FB2) form a high gain loop. The dashed-line in Fig. 3 represents the proposed compensation networks and fast self-reacting loops. This novel design pushes both the pole at the gate terminal of the power transistor and the pole at the LDO regulator output towards higher frequency than the UGF. The dominant pole is located at the output of amplifier stage A 1, the second pole is located at the output of amplifier stage A 5, and the third pole is located at the output of the LDO regulator. Amplifier stage A7reduces the output impedance of amplifier stage A2and theoutput impedance of the LDO regulator, pushing these twopoles higher than UGF. Compensation capacitor C m3 serves as a Miller capacitor to amplifier stage A 3 so that the poles at the input and output of amplifier stage A 3 are split off. Therefore, compensation capacitor C m3 and amplifier stage A 3 push the output pole of amplifier A 1 towards low frequency, forming the dominant pole. The output pole of LDO regulator is pushed towards higher frequency than the UGF, forming theFig. 3. Block-level architecture of the proposed FSR technique.third pole. Similarly, compensation capacitor C m1, resistor R m1, and amplifier stage A 6 push the pole at the power transistor gate to higher frequency than UGF and the output pole of the amplifier stage A 5 towards low frequency, forming the second pole. Capacitor C m2, amplifier stage A 4, and amplifier stage A 5 generate the first zero while compensation capacitor C m1, R m1, and amplifier stage A 6 generate the second zero. The second zero cancels out the third pole while the first zero cancels out the second pole. Therefore, the overall circuit works like a one-pole system and hence has high phase margin with good stability, as shown in Fig. 4. This figures illustrates the frequency responses and pole-zero diagrams of the compensated LDO regulator with C OUT = 0 under two different loads (0 and 100mA).dc m1m2mpw 12OUT A g g g R R R = (1)()1m3m2mpw 12PW FB1FB21P C g g R R R //R +R −≈⎡⎤⎣⎦(2)Fig. 4. Frequency responses of the FSR LDO regulator.Fig. 5. Phase margin of the FSR LDO regulator.()2m1m6m7561P C g +g R R −≈(3)()m 2mpw m 3PW FB1FB 23P1PO PO m 3P1m 3g g C R //R +R P C C +C C +C C ⎛⎞⎡⎤⎣⎦≈−⎜⎟⎜⎟⎝⎠(4) m51m 2m 44g Z C g R ⎛⎞≈−⎜⎟⎝⎠(5)2m1m1m 61Z 1C R g ⎛⎞⎜⎟⎜⎟≈⎜⎟⎛⎞−⎜⎟⎜⎟⎜⎟⎝⎠⎝⎠ (6) In the five process corners, the results show that when I LOAD =0,the minimum phase margin is 86.4°, and when I LOAD =100mA, the minimum phase margin is 90.8°, as shown in Fig. 5. These results confirm that the proposed design is a stable LDO regulator system with FSR compensation networks.III. E XPERIMENTAL R ESULTSFigure 6 and Figure 7 show the measured load/line transient responses. The load current switches between 0 and 100mA with both rise and fall time of 1μs. The result shows the output voltage variation is approximately 7.5mV, the maximum undershoot is 25mV, and the maximum overshoot is 5mV. The recovery time for the LDO output voltage is about 1μs when load current changes from 0 to 100mA. Theline transient response was measured by a 3.3V-4.3V stepFig. 6. Measured load transient response without output capacitor.Fig. 7. Measured line transient response without output capacitor.waveform with 5μs transition time. For I LOAD =100mA, the output voltage variation is approximately 1mV, the output voltage undershoot is 4mV, and the output voltage overshoot is 6.5mV. The load regulation is approximately -75.2μA/mA, and the line regulation at I LOAD =100mA is 1.046mV/V. The dropout voltage at load current of 100mA is 142mV. The supply voltage required to ensure the correct operation of the LDO regulator ranges from 1.642V to 5V, as shown in Fig. 8. When compared with the preset output voltage value (1.5V), the minimum error percentage is 0.525% at V IN =1.642V, and the maximum error percentage is 0.625% at V IN =5V. These results confirm that the proposed LDO regulator achieves a high-accuracy regulation. Finally, Table I summarizes the performance of the FSR LDO regulator and comparison with previous publications. The figure-of-merit (FOM) of this regulator is favorably compared to other published works. The proposed FSR technique effectively improves the transient speed of the LDO regulator without requiring an output capacitor. The output voltage is still very stable, especially with a full range of load current change. Figure 9 shows the micrograph of the LDO fabricated in 0.35μm CMOS technology, which occupies 0.2mm 2, including feedback resistors.IV. C ONCLUSIONIn this research, we propose a new LDO regulator topology, an ultra fast transient LDO regulator targeted for SoC applications. The key feature of this design is that it reduces required on-chip compensation capacitance using a novel fast self-reacting (FSR) technique that achieves high loop gainTABLE I. P ERFORMANCE SUMMARY AND COMPARISON WITH PREVIOUSLY PUBLISHED WORKSFig. 8. Measured DC input-output characteristic.Fig. 9. Chip micrograph of the proposed LDO.(high regulation accuracy), ultra fast load transient, high stability (even at zero load current), and very low quiescent current without output capacitor. Results show both regulation accuracy and transient responses are significantly improved. Performance comparison between some of the reported LDOs and the proposed FSR LDO is summarized in Table I. The Figure of Merit of [4], given by (7), is adopted to compare LDO performance.,,q OUT OUTOUT MAX OUT MAXI C V FOM I I ⋅Δ=(7)A lower FOM implies better performance. The proposed LDO has the smallest FOM, compared to other LDOs. Finally, the proposed FSR LDO is stable for output current in the complete range from 0 μA to 100 mA, and does not require any off-chip output capacitor.A CKNOWLEDGMENTThe authors would like to thank National Chip Implementation Center for supporting the chip fabrication. This work is sponsored by Taiwan National Science Council.R EFERENCES[1] C. Zheng and D. Ma, “Design of monolithic low dropout regulator forwireless powered brain cortical implants using a line ripple rejection technique,” IEEE Trans. Circuits and Systems II , vol. 57, no. 9, pp. 686-690, Sept. 2010.[2] W. Kruiskamp and R. Beumer, “Low drop-out voltage regulator withfull on-chip capacitance for slot-based operation,” in Proc. IEEE Eur. Solid-State Circuits Conf., pp. 346-349, Sep. 2008.[3] C. M. Chen and C. C. Hung, “A capacitor-free CMOS low-dropoutvoltage regulator,” in Proc. IEEE Int. Symp. Circuits and Systems (ISCAS09), pp. 2525-2528, May 2009.[4] P. Hazucha, T. Karnik, B. A. Bradley, C. Parsons, D. Finan, and S.Borkar, “Area-efficient linear regulator with ultra-fast load regulation,” IEEE J. Solid-State Circuits , vol. 40, no. 4, pp. 933-940, Apr. 2005. [5] R. J. Milliken, J. Silva-Martinez and E. Sanchez- Sinencio, “Full on-chip CMOS low-dropout voltage regulator,” IEEE Trans. Circuits Syst. I , vol. 54, no. 9, pp. 1879-1890, Sept. 2007.[6] S. K. Lau, P. K. T. Mok, and K. N. Leung, “A low-dropout regulator forSoC with Q-reduction,” IEEE J. Solid-State Circuits , vol. 42, no. 3, pp. 658-664, Mar. 2007.[7] K. N. Leung and P. K. T. Mok, “A capacitor-free CMOS low-dropoutregulator with damping-factor-control frequency compensation,” IEEE J. Solid-State Circuits , vol. 38, pp. 1691-1701, Oct. 2003.[8] P. Y. Or and K. N. Leung, “An output-capacitorless low-dropoutregulator with direct voltage-spike detection,” IEEE J. Solid-State Circuits , vol. 45, no. 2, pp. 458-466, Feb. 2010.[9] T. Y. Man, K. N. Leung, C. Y. Leung, P. K. T. Mok, and M. Chan,“Development of single-transistor-control LDO based on flipped voltage follower for SoC,” IEEE Trans. Circuits Sys. I , vol. 55, no. 5, pp. 1392-1401, Jun. 2008.。

capacitor-less LDO regulator

capacitor-less LDO regulator

Introduction: Currently, low-dropout (LDO) regulators are widely used in battery-powered mobile systems, which require small size and a clean supply voltage. To prolong battery life and to improve power efficiency, reductions in the quiescent current and the dropout voltage are necessary. However, a low quiescent current unavoidably slows the transient responses of an LDO regulator. Minimising the quiescent current and dropout voltage to increase power efficiency while maintaining good regulation and a fast response time is the main issue of LDO regulator design [1]. For portable applications, external components such as output capacitors should be minimised to reduce the printed circuit board (PCB) layout space and to speed up the manufacturing process, so an output capacitor-less LDO regulator is preferred. However, because of the limited on-chip size, the internal on-chip output capacitor is smaller and the ESR is increased. This will lead to severe output voltage changes during a fast-load current transient [1]. Recently, many researchers have proposed various strategies for improving the power efficiency and the transient response performance of the output capacitor-less LDO regulators. Using the capacitor coupling effect for the transient response performance [1 – 3] and modifying the driver of the power transistor to improve the slew rate have been proposed [4]. However, these methods need additional circuitry and current, which causes considerable degradation of the power efficiency. To solve these problems, the output voltage detector (OVD) is based on a highpass filter (HPF) that is able to detect the initial peak output voltage. The sensed signal activates an additional path to control the power transistor to improve the load-transient response. For low-power operation, the OVD block consumes only additional quiescent current to monitor the variation in the output voltage in steady state.

low drop-out voltage regulators cap-less architecture comparison!

low drop-out voltage regulators cap-less architecture comparison!

Digital Object Identifier 10.1109/MCAS.2014.2314263Date of publication: 20 May 2014Low Drop-Out Voltage Regulators: Capacitor-less Architecture ComparisonJoselyn torres, mohamed El-nozahi,ahmed amer, seenu gopalraju, reza abdullah, Kamran Entesari,and Edgar sánchez-sinencioAbstractI. IntroductionLow drop-out (LDO) voltage regulators are essential building blocks in power-management systems. Power-management systems for microprocessors and portable devices often use multiple LDO regulatorsto provide a regulated supply voltage with minimal rip-ple to supply-noise-sensitive blocks. The conventional LDO regulator block diagram is shown in Fig. 1(a) and it consists of a pass transistor ,M P an error amplifier EA, a feedback network (R F 1 and ),R F 2 and a bulky off-chip capacitor .C L Current source I L represents the required current by the load. The off-chip capacitor is used to achieve stability and good transient response,demand for system-on-chip solutions has increased the interest in low drop-out (Ldo) voltage regulators which do not require a bulky off-chip capacitor to achieve stability, also called capacitor-less Ldo (cL-Ldo) regulators. several architectures have been proposed; however comparing these reported architectures proves difficult, as each has a distinct process technology and specifications. this paper compares cL-Ldos in a unified matter. We designed, fabricated, and tested five illustrative cL-Ldo regulator topologies under common design conditions using 0.6µm cmos technol-ogy. We compare the architectures in terms of (1) line/load regulation, (2) power supply rejection, (3) line/load transient, (4) total on-chip compensation capacitance, (5) noise, and (6) quiescent power con-sumption. Insights on what optimal topology to choose to meet particular Ldo specifications are provided.ImagE by dr. E. sanchEz-sInEncIo.Joselyn Torres, Kamran Entesari, and Edgar Sánchez- ‐Sinencio are with Texas A&M University, College Station, TX, USA. Mohamed El- ‐Nozahi is with Ain Shams University, Cairo, Egypt. Ahmed Amer, Seenu Gopalraju, and Reza Abdullah are with Texas Instruments Inc., USA.and its value is often in the order of several micro-farads. However, this off-chip capacitor increases the total cost of the system and precludes the LDO regulator to be used in system-on-chip solutions. Hence, a LDO regula-tor that does not require an off-chip capacitor can signif-icantly reduce the number of external components and PCB area, thereby reducing the total cost of the system. This type of LDO regulators are known as capacitor-less LDOs (CL-LDOs) in the literature and its block diagram is shown in Fig. 1(b). In Fig. 1(b), C L models the parasitic capacitors and/or any integrated capacitor at the out-put node. C L is typically in the order of pico-farads in CL-LDO regulators.Previous works have been designed for different system requirements and implemented in different fab-rication technologies. As a result, comparing their per-formance proves difficult. In this work, we designed, fabricated, and measured five different CL-LDO regula-tors in the same process (0.6µm CMOS) under com-mon design specifications to facilitate comparison. Our remarks and observations are suitable for the chosen design constraints.Section II discusses the design issues in CL-LDO regulators. Representative CL-LDO regulator topologies [1]–[5], [15]–[32] are presented in Sections III and IV . Remarks on CL-LDO regulator architectures and experi-mental results are presented in Section V . Conclusions are drawn in Section VI.II. Design ConsiderationsKey design considerations for CL-LDO regulators include: stability at very light loads (low ),I L line/load regulation, line/load transient, and power supply rejec-tion ().PSR Trade-offs between these parameters are often topology dependent. A brief introduction to these design considerations is introduced in this section.A. StabilityA CL-LDO regulator model for stability analysis is shown in Fig. 2. This model uses Fig. 1(b) as reference. Signals ,V IN ,V OUT and V REF represent the input, output, and ref-erence voltages, respectively. b is the feedback factor set by the /,R R R F F F 221+^h and A p is the pass-transistorOn-ChipOn-Chip V REFV REFV OUTV INV INR F1I LC LI LC LR F2R F1R F2V INM PC 1C 2ωp1V INM PC 1ωp1ωp 0V OUTC 2ωp 0EA LoopLoop+–EA+–Dominant PoleDominant Pole(a)(b)Figure 1. (a) conventional Ldo regulator and (b) cL-Ldo regulator.V IN V V REF++––∑∑Error AmplifierA EA (s )A p 1 + s / poPass Transistor & LoadFeedback Factor cL-Ldo regulator model for stability analysis.voltage gain. The error amplifier transfer function isrepresented by A sEA ^h and can be expressed as, //,/,A sss A s A 111for two stage EA for one stage EA ,,p p op o121EA EA EA --~~~=+++^^^h h h Z [\]]]], (1)where po ~ is the output pole of the system and is given by the C L and the parallel combination of the output resis-tance of the pass transistor /,g 1ds ^h load resistance /,g 1L ^h and feedback resistors /.g 1b ^h The EA DC gain is repre-sented by ,A ,o EA and p 1~ and p 2~ are the dominant and non-dominant poles of the error amplifier, respectively.Stability is a critical design criterion since the unity gain frequency UGF ^h and location of the poles vary significantly with the load current condition, I L [6]. Thepoles of a two-stage CL-LDO regulator (one-stage )EA are given by: C g I p LL 0out?~= (2) ,C A C g I 1,p p o L 112EA?~=++^^h h(3)where, ,,g I g g g g K I g R R g I g K I A g g K I K IC g 11UGF ,L L L LF F L p Lp p L L m 122out out EAds ds mp mp \$$$..,m b =++=+====b b where K p is a process dependent parameter [7], m is the channel length modulation parameter, and K is a constant parameter. The pass transistor’s transcon-ductance is represented by ,g mp and the error amplifier output conductance and transconductance are repre-sented by g ,o EA and ,g ,m EA respectively. Capacitance C C C 1gs gb =+ and capacitance ,C C C m 2gd =+ where ,C gb ,C gd C gs are parasitic capacitances of the pass transis-tor and C m is a compensation capacitance. The domi-nant pole of the conventional LDO regulator is typically placed at p 0~ whereas the dominant pole of the capaci-tor-less LDO regulator is usually placed at .p 1~Observe that p 1~ is a function of I L while p 0~ is a function of .I L Thus, p 0~ changes at a faster rate than p 1~ with respect to .I L Fig. 3 shows the open loop Bode plot of the two-stage CL-LDO for the minimum load cur-rent I ,min L and the maximum load current .I ,max L From Fig. 3, it can be observed that the location of p 0~and p 1~ varies as I L changes. Note that unlike externally10050–5018013590450100105Frequency (Hz)Dominant PoleNon-Dominant Poleωp1ωp0Min I L Max I LLoop Breaking Point for Stability AnalysisREFV fb1V fb2V OUTV IN V IN VIN R F1I LC L R F2M PC 1C 2C m A 1A 2+–Lossy IntegratorBiquad1st 2nd3rd 3. two-stage cL-Ldo (one-stage )EA regulator movement bode plot.Figure 4. three-stage cL-Ldo (two-stage )EA regulator block diagram.compensated LDO regulators where the worst-case sta-bility condition occurs at ,i ,max L the worst-case stability condition for CL-LDO regulators occurs at .i ,min L Given a three-stage CL-LDO regulator (two-stage EA), we analyze the stability by considering a lossy integra-tor followed by a biquad, as shown in Fig. 4. Hence, the open loop transfer function can be write as,()()V s V s ss QsA A 11,p oo o p12122EA fb fb ~~~b =-+++`c j m, (4)where /g A A C ,p o p m 112EA ,~^h is the lossy integrator’s pole and dominant pole of the loop. g ,o 1EA is the output conductance of the ’s EA first stage. The natural fre-quency and the quality factor of the biquad are repre-sented by o ~ and ,Q respectively. Q is proportional to /g 18 mp 6@ and function of /.I 1L 4 Another useful nota-tion is: /(),Q 12d = where d is the damping factor.The biquad poles are generated by the pole at theoutput of the LDO regulator and the pole at the gate of the pass transistor. These two non-dominant poles mustbe above /g C UGF m m 1,b of the loop to ensure stability.At light loads, these two non-dominant poles become complex and can generate peaking due to the high Q ofthe biquad [2], [3] as shown in Fig. 5. If the magnitude ofthe peaking is large enough to cross the 0 decibels line, then the phase and gain margin will be affected; mak-ing the system unstable. Observe that for .,Q 0707# nopeaking occurs in the open-loop response.B. Load TransientThe load transient quantifies the peak output-voltage excursion and signal settling time when the load-current is stepped. An LDO regulator with good load-transientresponse must achieve minimal overshoot/undershootvoltage and fast settling time. For small load steps, the undershoot/overshoot of the output voltage is propor-tional to the output impedance Z so ^h (see Fig. 6)..Z sg R g R R s g g C C C C C s g C sC C R 111,,o o L o 22121212EA outoutEA me mp me mp me$b b b =+++++++^^^h h h(5)The CL-LDO regulator regulator has small-signal out-put impedance given by (5), where g me and R ,o EA denotethe error-amplifier transconductance and output resis-tance, respectively, and .R r R R F F 12out dsp =+^h In (5), it is assumed that .g g me mp %b Assuming, for simplicity, that we can apply small-signal perturbation analysis, then 10050–5018090–90010105Frequency (Hz)0Q>>0.707Unstable5. three-stage cL-Ldo (two-stage )EA regulator REFR F1I LC LR F2V OUT V IN V INM PC 1C 2LoopEA +–Z o200Subthreshold Region Saturation Region150********–1100Load Current (mA)101T r i o d e R e g i o nFigure 6. cL-Ldo regulator load transient set-up.output impedance at dc versus load current.()V Z s I o L out $T T =, (6)where /I I s L step T = in the Laplace domain. In actuality,small variations in I L would cause the parameters ofZ so ^h to change, adding nonlinearity to the response. H owever, we note that the load transient is stronglycorrelated to the output impedance. While externallycompensated regulators’ Z so ^h is dominated by a microfarad-range load capacitor, CL-LDOs Z so ^h arises chiefly from the open loop gain and can be improved by increasing the loop bandwidth. For large load current steps, the analysis is particularly challenging since the pass transistor operates in differentoperating regions (e.g. subthreshold, saturation, and tri-ode regions) over the entire load current range. Moreover, the transconductance, conductance, and parasitic capaci-tors of the pass transistor vary dynamically with the load current; hence complicating the analysis even further. Fig.7 shows an illustrative example of how the CL-LDO output impedance varies as the load current changes and how the pass transistor operates in different regions over the entire load current range. Fig. 8 depicts the parasitic capacitanceof the pass transistor variation versus load current. As can be seen, the CL-LDO output impedance and the parasiticcapacitances of the pass transistor significantly vary over the entire current range. Fortunately, it has been observed that improving the slew rate (a large signal parameter) helps to minimize the undershoot/overshoots during large load current steps. In CL-LDOs, the slew rate /I C bias gate ^h is highly dependent on total capacitance at the gate of the pass transistor and the bias current of the error amplifier’s stage driving it. Fig. 9 shows an example of the V out under-shoot amplitude variation versus the bias current of the EA’s output stage for the CL-LDO regulator in Fig. 4. As canbe seen, the undershoot amplitude reduces as the biascurrent increases. In Section III, several architectures thatemphasize on improving the slew rate in CL-LDOs will be discussed. The main idea behind all of them is increasing the charging/discharging current at the gate of the passtransistor during large load transient events.C. Load RegulationThe load regulation also quantifies the voltage variation at the output when change in the load-current occurs but it is measured once the output voltage is in steady-state:I V Load Regulation Lt OUT T T _"3. (7)H ence, the load regulation is related to the closed loop DC output resistance of the LDO :R ,cl out ()R Z s g R A R g A 11,,,cl o s oo 0out out EA out EA mp mp ,b b ==+=.(8)60Subthreshold Region Saturation Region 504030201010–1100Load Current (mA)101T r i o d e Re g i o nC gsC gdC gb15105I B10I Bias Currentreduction in undershoot amplitude versus bias current.M P parasitic capacitance versus load current.As seen in (8), the higher the error amplifier DC gain, the smaller R ,cl out , and as result, the better the load regu-lation. High EA DC gain at I ,max L is particularly necessary to achieve good load regulation.D. Power Supply RejectionPSR refers to the amount of voltage ripple at the output of the LDO coming from the input voltage. The finite PSR in LDO regulators is due to several paths between the input and output. Fig. 10 depicts four paths that could couple input-voltage ripple to the LDO regulator output [9].The ripple coming from path 4 (voltage reference) is minimum when a high PSR voltage reference is imple-mented. Otherwise, it can be reduced by adding a low-pass filter to the output of the voltage reference at theV REF R F1C LR F2V OUTV INV INM PC 1+–4312C 2Loop V INV OUT -A1/g m2R o1R o1R o2i i(a)V INV PV NI BV OUT -A1/g m2R o2M 1M 1M 2M 2(b)V V INV PV NR o2M 1M 1M 2I B1/g m2M 2V OUT -Bi1/g m2R o1R o1R o2iOUT -B(a)(b)1/g m2R o1R o1R o2ii V iV g V o C r dspC 1C 2R F1R F2g mp (V g – V i )βg me V oβV o Type-A Error Amplifier PSR ModelFigure 10. Input-to-output ripple paths in cL-Ldo regulators [9].Figure 11. (a) small signal model for Psr of type-a ampli-fiers and (b) an example of a type-a amplifier [11].Figure 13. cL-Ldo regulator implemented with type-a Ea.Figure 12. (a) small signal model for Psr of type-b ampli-fiers and (b) an example of a type-b amplifier [11].expense of increasing area [10]. Therefore, the ripplecontribution due to path 4 is neglected. The PSR trans-fer function of the CL-LDO regulator strongly depends on the type of EA [11]. The concept of the Type-A and Type-B error amplifiers was introduced in [11] to ana-lyze the PSR of CL-LDO regulators. Fig. 11(a) and (b) show the Type-A small-signal model for PSR analysis and an example of a Type-A EA, respectively. Fig. 12(a) and (b) show the Type-B small-signal model for PSR analysis and an example of a Type-B EA, respectively [9]. Current i is approximately /V R o 1IN for /,R g 1 o m 12& where /.R g R 12,o m M B 11,+ Resistor R B represents cur-rent source I B small signal resistance.Fig. 13 and Fig. 14 show the PSR small signal model for CL-LDO regulators implemented with Type-A and Type-B EAs, respectively. These small signal models are based on Fig. 10. From Fig. 13 and Fig. 14 and assuming ,R R R ,o o o 12EA = we obtain the following:,V V A A A A ss ss 111111PSR ,io p o p p p z z 1212EA PSR $$$,b ~~~~=+-++++^````h j jj j (9)where ,, ,C g C C C C g C g 1 p p L z 12212121memp mp,,,~b ~~++c m, , .A g r A g R R R R ,p o F F F 122EA EA mp dsp me b ===+A PSR is the error amplifier’s open loop PSR; and equals to approximately one or zero for Type-A or B, respec-tively. In (9), it is assumed that .g g me mp %b Table 1 shows the analytical expressions for z 1 ~ and PSR DC in CL-LDO regulators implemented with Type-A and Type-B error amplifiers. As can be seen from Table 1, CL-LDO regulators implemented with Type-A ampli-fier present higher DC PSR than the ones implemented with Type-B amplifier for the same loop gain.Fig. 15 compares the PSR performance of LDO imple-mented with Type-A EA versus Type-B EA for the same loop gain and bandwidth, pass transistor dimensions, and load current. As can be seen from Fig. 15, the CL-LDO implemented with Type-A EA exhibits better PSR performance at low frequencies.In the case of CL-LDOs implemented with two-stage ,s EA it can be proved that the best PSR performance occurs when the first stage is implemented with Type-B amplifier and the second stage is implemented with Type-A amplifier since the overall error amplifier is effectively Type-A.Table 2 classifies some common amplifier topologies in Type-A and Type-B amplifiers.E. Line Transient and RegulationLine transient measures the output voltage variation in response to a voltage step at the input of the LDO regula-tor. Line transient is related to PSR, since both quantify the change in V OUT due to a variation in ;V IN however,1/g m2R o1R o1R o2ii V iV g V o C r C 1C 2R F1R F2g mp (V g – V i )βg me V oβV o Type-B Error Amplifier PSR ModelFigure 14. cL-Ldo regulator implemented with type-b Ea.table 1.Analytical expressions for PsR of CL-LDO regulators.error amplifier A PSR z 1~PSR DC Type-A 1g r C g ,o 2EA mp ds A g r 1,o EA mp b 0–10–20–30–40–50–60100102Frequency (Hz)104106Type-A EA Type-B EA20log |g mp r dsp |15. Ldo’s Psr comparison for type-a and type-b Ea with the same loop gain, pass transistor dimensions, and load current.they differ in that line transient/PSR are large/small-signal parameters, respectively [10]. Nevertheless, improving PSR at low-frequencies and high frequencies typically improves line regulation and line transient response, respectively. Assuming, for simplicity, that we can apply small-signal perturbation analysis, thenV sV PSR OUT IN $T T =^h , (10)where /V V s IN step T = in the Laplace domain and ()s PSRis the power supply rejection transfer function of thesystem. In fact, small changes in V IN would cause the parameters of ()s PSR to change, adding nonlinearity tothe response. However, we note that the line transient is strongly correlated to the power supply rejection trans-fer function of the system.The line regulation also quantifies the voltage varia-tion at the output when change in the input voltage hap-pens but it is measured once the output voltage is insteady-state:V V Line Regulation t IN OUTT T _"3. (11)Hence, the line regulation is related to the PSR at low-frequencies (DC):()s 0 Line Regulation PSR ,=. (12)As seen in (12), the better the PSR at low frequencies (DC), the better the line regulation. F. NoiseNoise in LDO regulators refers to the thermal and flicker noise in transistors and resistors. It can be specified as output voltage noise spectral density /V Hz^h or as integrated output noise voltage V rms ^h which is essen-tially the output spectral noise density integrated overa bandwidth [12], [13]. For instance, if the LDO pro-vides a regulated voltage to a voltage-control oscillator(VCO) the output spectral noise density curve would prove more useful for phase-noise/jitter computation. Ifinstead the LDO regulates an ADC, then the integrated RMS noise could be more appropriate [13]. Fig. 16 showsthe main noise contributors in LDO regulator. (),S f ,n ref(),S f ,n EA ,S f ,n MP ^h (),S f ,n 1RF and ()S f ,n 2RF represent the noise power spectral density of the voltage reference,error amplifier, pass transistor, ,R F 1 and ,R F 2 respec-tively [14].The total output noise power spectral density of the LDO regulator is: .S f S f S f A S f R R S f R R S f 1,,,,,,n o n n n F F n F F n 221222121ref EA EAMP RF RF =+++++^^^^c c ^c ^h h h h m mh m h(13)Notice that the noise contribution of the pass transis-tor can be neglected since it is divided by the EA gainR F1C L R F2V OUTV INV INM Pn,refS n,EAS n,MPS n,RF1S n,RF2C 1C 2Loop+–EA Figure 16. Ldo regulator major noise contributors.which is typically high. Thus, the total output noise power spectral density can be approximated as: .S f S f S f R R S f R R S f 1,,,,,n o n n F F n F F n 21222121ref EA RF RF ,++++^^^^c ^c ^h h hh mh m h (14)The noise coming from the voltage reference can be significantly reduced by adding a low-pass filter to the output of the voltage reference at the expense of increas-ing area. The EA and feedback resistors noise are typi-cally the dominant sources of a LDO regulator noise. III. Comparison of CL-LDO Regulator Topologies We categorize several illustrative CL-LDO regulator topologies into 3 groups. In this section, it is assumed that the gain stages are powered from V IN unless other-wise specified.A. Advanced Compensation TopologiesTopologies [1] and [2] are some of the first reported CL-LDO regulators. They are based on Miller pole split-ting compensation to achieve small on-chip capacitance when compared with the conventional LDO regulator. In Fig. 17(a) [1], a damping-factor circuit stabilizes the LDO regulator for various capacitive load conditions. The LDO regulator requires the damping factor compensation(DFC) circuit to be stable with and without an off-chip capacitor. In a capacitor-less configuration, thedamping-factor circuitry might not be necessary sincethe feedback loop is effectively compensated with the Miller-compensation capacitor .C m The dominant pole is given by A A C p m 2 and the output resistance of the EAfirst stage .A 1 In this paper, we will refer to this topol-ogy as the Damping Factor architecture. Fig. 17(b) shows the Q-reduction architecture. This architecture was pro-posed to minimize on-chip capacitance and quiescent current [2]. The Q-reduction circuit is formed by C Q and the transconductance .A 2 The Q-reduction techniquecontrols the Q of the non-dominant complex poles toimprove the stability at light loads.B. Load Transient TopologiesApproaches that improve the load transient comprise either pass-transistor-gate-voltage slew-rate enhance-ment with multiple active loops [4], [5], [15]–[22] and/or output-impedance reduction [23]–[27].Architectures in [5] and [15] employ a current amplifier A i in series with capacitor C f that acts as an auxiliary fast loop in addition to the main voltage loop as shown in Fig. 18(a). The capacitance C f reacts to sudden changes on V OUT during load transients by generating an equivalent transient current .i f ^h Then, current i f is amplified by the gain A i and injected into the pass transistor’s gate capaci-tance. Thus, this auxiliary loop improves the transient response. Moreover, it helps to achieve internal frequency compensation since the dominant pole of the system isdefined by /A A C R R 1d i p f oi o 1,~^h where R oi and R o 1 are the output resistances of A i and ,A 1 respectively. [16] expands on this technique, employing a bi-directional, asymmetric current amplifier to increase the UGF by can-celling the RHP zero from the pass-transistor .C gd REFC mC Q–A F R F1R F2V V INM PA 1A 2A 3+–REFR F1C mR F2V V INC DF –A DFA 1A 2M P+–(a)(b)No CL-LDO ConfigurationFigure 17. cL-Ldos with improved frequency compensation techniques (a) damping factor [1] (b) Q-reduction [2].Fig. 18(b) displays a CL-LDO with multiple loops to improve the settling response [4]. This CL-LDO regula-tor combines a current-sensing transistor M s and a tran-simpedance amplifier A TRANS to generate an additional fast loop. Load variations are detected by the M s to gen-erate a scaled copy of .I L During transitions from lowto high load currents, the corresponding increase in the sense current I s improves the slew rate at the gate of the pass transistor.In Fig. 18(c) [17], an EA with push-pull output stage achieves high slew rate at the gate of the pass transistor and reduces the quiescent current consumption. ClassR F1C fR F2V OUT V INA 1A iI fM P +–REFLowImpedanceC mR F1R F2V V INI SENSE M PMSA 1A TRANS –A 2+–+–REFG mxG maC aM ffR F1R F2V OUTV INV 1M PA 2V 1A 1+–REFLow ImpedanceActive FeedbackSlew Rate EnhancementG mH V OUTV INIoa M P++–G mL +––V REF LowImpedanceLowImpedance∑R F1R V V INM PA EA +–REFAdaptively Biased M sI BI AB1:NCurrent MirrorV OUTV OUTV OUTV INM P A 1A 2+++–––V REFV REF V REF Capacitive Coupling HPF M s1I dch I chM s2C CR R Adaptive T ransmission Control (V H , V L )(a)(b)(c)(d)(e)(f)Figure 18. cL-Ldos with multi-feedback loops (a) differentiator [5], (b) transimpedance [4], (c) high slew rate Ea [17], (d) aFc&srE [18], (e) adaptively biased [20], and (f) capacitive coupling & atc [21].AB operation improves the slew rate since during tran-sient events the peak currents of the transconductors G mH and G mL are not limited by the bias current.The CL-LDO regulator in Fig. 18(d) [18] combines active feedback compensation (AFC) G ma and slew-rate-enhancement (SRE) G mx techniques to increase the loop bandwidth, reduce the total on-chip compensation capacitance, and improve the slew rate at the gate of the pass transistor. The slew-rate enhancement block reduces V OUT variations during load transient events. The combination of M ff with M P creates a weak push-pull at the V OUT node to reduce the overshoots during load transients. A similar architecture is presented in [19].In Fig. 18(e) [20], a CL-LDO regulator uses an auxiliary loop to adjust the bias current of the ’EA s first stage. The EA is biased with a small fixed current I B and an adaptive bias current I AB proportional to .I L The auxil-iary loop is formed by the current sensing transistor M s and a simple current mirror. The adaptive bias currentM cM PV OUTV CTRLV INC L I LI BLow ImpedanceLoopR F1R F2V INM PSM PM N2M N1R B1R B2V BA 1+–REFA 2Error AmplifierR F1CRR F2V V INV IN A 1M P M N+–V REFV REF LPF Error AmplifierCharge PumpR F1R F2V V IN V IN M PM N2A 1+–V REFREFA 2Error AmplifierCharge Pump LDO + LPFR F1R F2V V INM PA 1+–REFA 2Error AmplifierBPF(a)(b)(c)(d)Figure 19. cL-Ldos based on FVF [23]–[27].cL-Ldos for Psr enhancement (a) nmos cascode [28], (b) nmos cascode with auxiliary Ldo [29], [30], (c) voltage subtractor [3], [31], and (d) FF with bPF [32].I AB increases the loop bandwidth and, as a result, the load transient performance is improved. A multi-loop CL-LDO regulator that improves theload/dynamic voltage scaling transient response is shown in Fig. 18(f) [21]. The first loop employs a capaci-tively coupled high-pass filter that detects voltage vari-ations at V REF and V OUT to increase the slew rate at the gate of the pass transistor. This increase in the slew rate improves the transient response. The second loop com-prises the adaptive transmission control (ATC) block, two switches M s 1 and ,M s 2 and the current sources I ch and .I dch This loop detects large voltage variations of V OUT and ,V REF compares them with reference voltages /V V H L (not shown), and decides whether to enable M s 1 or M s 2 to charge or discharge the pass-transistor gate. A multi-loop CL-LDO structure for SRAM bank designed for very fast load step response while maintaining low quiescent current is presented in [22]. Multiple CL-LDO regulator topologies with a power stage based on the flipped voltage follower (FVF) have been proposed [23]–[27]. These topologies were not fab-ricated in this work, but are included in the discussionfor the sake of completeness. The FVF exhibits low out-put impedance due to shunt feedback, thus yielding goodload regulation and stability [24]. The basic FVF CL-LDOregulator consists of pass transistor ,M p control transis-tor ,M c and current source I B as shown in Fig. 19. Voltage V CTRL sets .V V V ,OUT CTRL SG MC =+ Transistor M c source terminal senses variations at V OUT and then amplifies theerror signal to control the gate voltage of .M p This mecha-nism regulates V OUT and generates the required current by the load. Several architectures [25]–[27] have beenproposed to improve the slew rate at the gate of M p and increase the loop gain. C. PSR TopologiesFig. 20 shows several topologies that have been pro-posed to improve PSR [3], [28]–[32]. The compensation schemes are not included to simplify the diagrams. In Fig. 20(a) [28], an NMOS cascoded with the PMOS pass transistor is added to increase the isolation between V IN and .V OUT A charge pump generates a large voltage at the gate of the NMOS transistor to reduce its drop out voltage. In addition, a first-order low pass filter LPF ^h is placed between the output of the charge pump and the gate of the NMOS device to reduce the charge pump output ripple. In Fig. 20(b) [29], [30] an NMOS cascoded with the PMOS transistor is used as well, but the gate bias of the NMOS is controlled with an auxiliary LDO regu-lator and first-order LPF. This implementation can poten-tially reduce the area when compared with [28] since the amplifier consumes low current from the charge pumpC mC 1C 21/g o11/g o21/(g L + g dsp )C L C gd v out v fb2v fb1R F1R F2g m1g m2–g mpC mC p C cfC 1C 21/g o11/g o21/g mcf1/(g L + g dsp )C LC gdv outv fb2R F1R –g m1–g mf1–g mcf g m2–g mp v fb1cL-Ldo regulator with Q-reduction technique small-signal model.Figure 21. cL-Ldo regulator with damping factor techniquesmall-signal model.。

半导体微电子专业词汇中英文对照

半导体微电子专业词汇中英文对照

半导体微电子专业词汇中英文对照Accelerated testing 加速实验Acceptor 受主Acceptor atom 受主原子Accumulation 积累、堆积Accumulating contact 积累接触Accumulation region 积累区Accumulation layer 积累层Acoustic Surface Wave 声表面波Active region 有源区Active component 有源元Active device 有源器件Activation 激活Activation energy 激活能Active region 有源(放大)区A/D conversion 模拟—数字转换Adhesives 粘接剂Admittance 导纳Aging 老化Airborne 空载Allowed band 允带allowance 容限,公差Alloy—junction device合金结器件Aluminum(Aluminum)铝Aluminum – oxide 铝氧化物Aluminum Nitride 氮化铝Aluminum passivation 铝钝化Ambipolar 双极的Ambient temperature 环境温度A M light 振幅调制光,调幅光amplitude limiter 限幅器Amorphous 无定形的,非晶体的Amplifier 功放放大器Analogue(Analog)comparator 模拟比较器Angstrom 埃Anneal 退火Anisotropic 各向异性的Anode 阳极Antenna 天线Aperture 孔径Arsenide (As)砷Array 阵列Atomic 原子的Atom Clock 原子钟Attenuation 衰减Audio 声频Auger 俄歇Automatic 自动的Automotive 汽车的Availability 实用性Avalanche 雪崩Avalanche breakdown 雪崩击穿Avalanche excitation雪崩激发Background carrier 本底载流子Background doping 本底掺杂Backward 反向Backward bias 反向偏置Ball bond 球形键合Band 能带Band gap 能带间隙Bandwidth 带宽Bar 巴条发光条Barrier 势垒Barrier layer 势垒层Barrier width 势垒宽度Base 基极Base contact 基区接触Base stretching 基区扩展效应Base transit time 基区渡越时间Base transport efficiency基区输运系数Base—width modulation基区宽度调制Batch 批次Battery 电池Beam 束光束电子束Bench 工作台Bias 偏置Bilateral switch 双向开关Binary code 二进制代码Binary compound semiconductor 二元化合物半导体Bipolar 双极性的Bipolar Junction Transistor (BJT)双极晶体管Bit 位比特Blocking band 阻带Body - centered 体心立方Body—centred cubic structure 体立心结构Boltzmann 波尔兹曼Bond 键、键合Bonding electron 价电子Bonding pad 键合点Boron 硼Borosilicate glass 硼硅玻璃Bottom—up 由下而上的Boundary condition 边界条件Bound electron 束缚电子Bragg effect 布拉格效应Breadboard 模拟板、实验板Break down 击穿Break over 转折Brillouin 布里渊FBrillouin zone 布里渊区Buffer 缓冲器Built—in 内建的Build-in electric field 内建电场Bulk 体/体内Bulk absorption 体吸收Bulk generation 体产生Bulk recombination 体复合Burn—in 老化Burn out 烧毁Buried channel 埋沟Buried diffusion region 隐埋扩散区Bus 总线Calibration 校准,检定,定标、刻度,分度Capacitance 电容Capture cross section 俘获截面Capture carrier 俘获载流子Carbon dioxide (CO2)二氧化碳Carrier 载流子、载波Carry bit 进位位Cascade 级联Case 管壳Cathode 阴极Cavity 腔体Center 中心Ceramic 陶瓷(的)Channel 沟道Channel breakdown 沟道击穿Channel current 沟道电流Channel doping 沟道掺杂Channel shortening 沟道缩短Channel width 沟道宽度Characteristic impedance 特征阻抗Charge 电荷、充电Charge-compensation effects 电荷补偿效应Charge conservation 电荷守恒Charge drive/exchange/sharing/transfer/storage 电荷驱动/交换/共享/转移/存储Chemical etching 化学腐蚀法Chemically-Polish 化学抛光Chemically-Mechanically Polish (CMP)化学机械抛光Chemical vapor deposition (cvd)化学汽相淀积Chip 芯片Chip yield 芯片成品率Circuit 电路Clamped 箝位Clamping diode 箝位二极管Cleavage plane 解理面Clean 清洗Clock rate 时钟频率Clock generator 时钟发生器Clock flip—flop 时钟触发器Close—loop gain 闭环增益Coating 涂覆涂层Coefficient of thermal expansion 热膨胀系数Coherency 相干性Collector 集电极Collision 碰撞Compensated OP-AMP 补偿运放Common-base/collector/emitter connection 共基极/集电极/发射极连接Common—gate/drain/source connection 共栅/漏/源连接Common—mode gain 共模增益Common-mode input 共模输入Common—mode rejection ratio (CMRR) 共模抑制比Communication 通信Compact 致密的Compatibility 兼容性Compensation 补偿Compensated impurities 补偿杂质Compensated semiconductor 补偿半导体Complementary Darlington circuit 互补达林顿电路Complementary Metal—Oxide-SemiconductorField—Effect-Transistor(CMOS) 互补金属氧化物半导体场效应晶体管Computer-aided design (CAD)/test(CAT)/manufacture(CAM) 计算机辅助设计/ 测试/制造Component 元件Compound Semiconductor 化合物半导体Conductance 电导Conduction band (edge) 导带(底)Conduction level/state 导带态Conductor 导体Conductivity 电导率Configuration 结构Conlomb 库仑Constants 物理常数Constant energy surface 等能面Constant-source diffusion恒定源扩散Contact 接触Continuous wave 连续波Continuity equation 连续性方程Contact hole 接触孔Contact potential 接触电势Controlled 受控的Converter 转换器Conveyer 传输器Cooling 冷却Copper interconnection system 铜互连系统Corrosion 腐蚀Coupling 耦合Covalent 共阶的Crossover 交叉Critical 临界的Cross-section 横断面Crucible坩埚Cryogenic cooling system 冷却系统Crystal defect/face/orientation/lattice 晶体缺陷/晶面/晶向/晶格Cubic crystal system 立方晶系Current density 电流密度Curvature 曲率Current drift/drive/sharing 电流漂移/驱动/共享Current Sense 电流取样Curve 曲线Custom integrated circuit 定制集成电路Cut off 截止Cylindrical 柱面的Czochralshicrystal 直立单晶Czochralski technique 切克劳斯基技术(Cz法直拉晶体J))Dangling bonds 悬挂键Dark current 暗电流Dead time 空载时间Decade 十进制Decibel (dB)分贝Decode 解码Deep acceptor level 深受主能级Deep donor level 深施主能级Deep energy level 深能级Deep impurity level 深度杂质能级Deep trap 深陷阱Defeat 缺陷Degenerate semiconductor 简并半导体Degeneracy 简并度Degradation 退化Degree Celsius(centigrade)/Kelvin 摄氏/开氏温度Delay 延迟Density 密度Density of states 态密度Depletion 耗尽Depletion approximation 耗尽近似Depletion contact 耗尽接触Depletion depth 耗尽深度Depletion effect 耗尽效应Depletion layer 耗尽层Depletion MOS 耗尽MOS Depletion region 耗尽区Deposited film 淀积薄膜Deposition process 淀积工艺Design rules 设计规则Detector 探测器Developer 显影剂Diamond 金刚石Die 芯片(复数dice)Diode 二极管Dielectric Constant 介电常数Dielectric isolation 介质隔离Difference-mode input 差模输入Differential amplifier 差分放大器Differential capacitance 微分电容Diffusion 扩散Diffusion coefficient 扩散系数Diffusion constant 扩散常数Diffusivity 扩散率Diffusion capacitance/barrier/current/furnace 扩散电容/势垒/电流/炉Digital circuit 数字电路Dimension (1)尺寸(2)量钢(3)维,度Diode 二极管Dipole domain 偶极畴Dipole layer 偶极层Direct-coupling 直接耦合Direct-gap semiconductor 直接带隙半导体Direct transition 直接跃迁Directional antenna 定向天线Discharge 放电Discrete component 分立元件Disorder 无序的Display 显示器Dissipation 耗散Dissolution 溶解Distributed capacitance 分布电容Distributed model 分布模型Displacement 位移Dislocation 位错Domain 畴Donor 施主Donor exhaustion 施主耗尽Dopant 掺杂剂Doped semiconductor 掺杂半导体Doping concentration 掺杂浓度Dose 剂量Double-diffusive MOS(DMOS)双扩散MOS Drift 漂移Drift field 漂移电场Drift mobility 迁移率Dry etching 干法腐蚀Dry/wet oxidation 干/湿法氧化Dose 剂量Dual—polarization 双偏振,双极化Duty cycle 工作周期Dual-in-line package (DIP)双列直插式封装Dynamics 动态Dynamic characteristics 动态属性Dynamic impedance 动态阻抗Early effect 厄利效应Early failure 早期失效Effect 效应Effective mass 有效质量Electric Erase Programmable Read Only Memory(E2PROM)电可擦除只读存储器Electrode 电极Electromigration 电迁移Electron affinity 电子亲和势Electron—beam 电子束Electroluminescence 电致发光Electron gas 电子气Electron trapping center 电子俘获中心Electron Volt (eV) 电子伏Electro-optical 光电的Electrostatic 静电的Element 元素/元件/配件Elemental semiconductor 元素半导体Ellipse 椭圆Emitter 发射极Emitter-coupled logic 发射极耦合逻辑Emitter—coupled pair 发射极耦合对Emitter follower 射随器Empty band 空带Emitter crowding effect 发射极集边(拥挤)效应Endurance test =life test 寿命测试Energy state 能态Energy momentum diagram 能量—动量(E—K)图Enhancement mode 增强型模式Enhancement MOS 增强性MOSEnteric (低)共溶的Environmental test 环境测试Epitaxial 外延的Epitaxial layer 外延层Epitaxial slice 外延片Epoxy 环氧的Equivalent circuit 等效电路Equilibrium majority /minority carriers 平衡多数/少数载流子Equipment 设备Erasable Programmable ROM (EPROM)可搽取(编程)存储器Erbium laser 掺铒激光器Error function complement 余误差函数Etch 刻蚀Etchant 刻蚀剂Etching mask 抗蚀剂掩模Excess carrier 过剩载流子Excitation energy 激发能Excited state 激发态Exciton 激子Exponential 指数的Extrapolation 外推法Extrinsic 非本征的Extrinsic semiconductor 杂质半导体Fabry-Perot amplifier 法布里-珀罗放大器Face — centered 面心立方Fall time 下降时间Fan-in 扇入Fan—out 扇出Fast recovery 快恢复Fast surface states 快表面态Feedback 反馈Fermi level 费米能级Femi potential 费米势Fiber optic 光纤Field effect transistor 场效应晶体管Field oxide 场氧化层Figure of merit 品质因数Filter 滤波器Filled band 满带Film 薄膜Fine pitch 细节距Flash memory 闪存存储器Flat band 平带Flat pack 扁平封装Flatness 平整度Flexible 柔性的Flicker noise 闪烁(变)噪声Flip—chip 倒装芯片Flip- flop toggle 触发器翻转Floating gate 浮栅Fluoride etch 氟化氢刻蚀Focal plane 焦平面Forbidden band 禁带Formulation 列式,表达Forward bias 正向偏置Forward blocking /conducting 正向阻断/导通Free electron 自由电子Frequency deviation noise 频率漂移噪声Frequency response 频率响应Function 函数Gain 增益Gallium-Arsenide(GaAs) 砷化镓Gallium Nitride 氮化镓Gate 门、栅、控制极Gate oxide 栅氧化层Gate width 栅宽Gauss(ian)高斯Gaussian distribution profile 高斯掺杂分布Generation-recombination 产生-复合Geometries 几何尺寸Germanium(Ge) 锗Gold 金Graded 缓变的Graded (gradual)channel 缓变沟道Graded junction 缓变结Grain 晶粒Gradient 梯度Graphene 石墨烯Grating 光栅Green laser 绿光激光器Ground 接地Grown junction 生长结Guard ring 保护环Guide wave 导波波导Gunn — effect 狄氏效应Gyroscope 陀螺仪Hardened device 辐射加固器件Harmonics 谐波Heat diffusion 热扩散Heat sink 散热器、热沉Heavy/light hole band 重/轻空穴带Hell - effect 霍尔效应Hertz 赫兹Heterojunction 异质结Heterojunction structure 异质结结构Heterojunction Bipolar Transistor(HBT)异质结双极型晶体High field property 高场特性High-performance MOS(H-MOS)高性能MOS器件High power 大功率Hole 空穴Homojunction 同质结Horizontal epitaxial reactor 卧式外延反应器Hot carrier 热载流子Hybrid integration 混合集成Illumination (1)照明(2)照明学Image - force 镜象力Impact ionization 碰撞电离Impedance 阻抗Imperfect structure 不完整结构Implantation dose 注入剂量Implanted ion 注入离子Impurity 杂质Impurity scattering 杂志散射Inch 英寸Incremental resistance 电阻增量(微分电阻)In-contact mask 接触式掩模Index of refraction 折射率Indium 铟Indium tin oxide (ITO) 铟锡氧化物Inductance 电感Induced channel 感应沟道Infrared 红外的Injection 注入Input power 输入功率Insertion loss 插入损耗Insulator 绝缘体Insulated Gate FET(IGFET) 绝缘栅FET Integrated injection logic 集成注入逻辑Integration 集成、积分Integrated Circuit 集成电路Interconnection 互连Interconnection time delay 互连延时Interdigitated structure 交互式结构Interface 界面Interference 干涉International system of unions 国际单位制Internally scattering 谷间散射Interpolation 内插法Intrinsic 本征的Intrinsic semiconductor 本征半导体Inverse operation 反向工作Inversion 反型Inverter 倒相器Ion 离子Ion beam 离子束Ion etching 离子刻蚀Ion implantation 离子注入Ionization 电离Ionization energy 电离能Irradiation 辐照Isolation land 隔离岛Isotropic 各向同性Junction FET(JFET)结型场效应管Junction isolation 结隔离Junction spacing 结间距Junction side-wall 结侧壁Laser 激光器Laser diode 激光二极管Latch up 闭锁Lateral 横向的Lattice 晶格Layout 版图Lattice binding/cell/constant/defect/distortion 晶格结合力/晶胞/晶格/晶格常熟/晶格缺陷/晶格畸变Lead 铅Leakage current (泄)漏电流Life time 寿命linearity 线性度Linked bond 共价键Liquid Nitrogen 液氮Liquid-phase epitaxial growth technique 液相外延生长技术Lithography 光刻Light Emitting Diode(LED) 发光二极管Linearity 线性化Liquid 液体Lock in 锁定Longitudinal 纵向的Long life 长寿命Lumped model 集总模型Magnetic 磁的Majority carrier 多数载流子Mask 掩膜板,光刻板Mask level 掩模序号Mask set 掩模组Mass — action law 质量守恒定律Master—slave D flip—flop 主从D 触发器Matching 匹配Material 材料Maxwell 麦克斯韦Mean free path 平均自由程Mean time before failure (MTBF) 平均工作时间Mechanical 机械的Membrane (1)薄腊,膜片(2)隔膜Megeto - resistance 磁阻Mesa 台面MESFET-Metal Semiconductor 金属半导体FET Metalorganic Chemical Vapor Deposition MOCVD 金属氧化物化学汽相淀积Metallization 金属化Metal oxide semiconductor (MOS)金属氧化物半导体MeV 兆电子伏Microelectronic technique 微电子技术Microelectronics 微电子学Microelectromechanical System (MEMS) 微电子机械系统Microwave 微波Millimeterwave 毫米波Minority carrier 少数载流子Misfit 失配Mismatching 失配Mobility 迁移率Module 模块Modulate 调制Molecular crystal 分子晶体Monolithic IC 单片MOSFET 金属氧化物半导体场效应晶体管Mount 安装Multiplication 倍增Modulator 调制Multi-chip IC 多芯片ICMulti—chip module(MCM) 多芯片模块Multilayer 多层Multiplication coefficient 倍增因子Multiplexer 复用器Multiplier 倍增器Naked chip 未封装的芯片(裸片) Nanometer 纳米Nanotechnology 纳米技术Negative feedback 负反馈Negative resistance 负阻Negative—temperature—coefficient负温度系数Nesting 套刻Noise figure 噪声系数Nonequilibrium 非平衡Nonvolatile 非挥发(易失)性Normally off/on 常闭/开Nuclear 核Numerical analysis 数值分析Occupied band 满带Offset 偏移、失调On standby 待命状态Ohmic contact 欧姆接触Open circuit 开路Operating point 工作点Operating bias 工作偏置Operational amplifier (OPAMP)运算放大器Optical photon 光子Optical quenching 光猝灭Optical transition 光跃迁Optical-coupled isolator 光耦合隔离器Organic semiconductor 有机半导体Orientation 晶向、定向Oscillator 振荡器Outline 外形Out—of—contact mask 非接触式掩模Output characteristic 输出特性Output power 输出功率Output voltage swing 输出电压摆幅Overcompensation 过补偿Over-current protection 过流保护Over shoot 过冲Over—voltage protection 过压保护Overlap 交迭Overload 过载Oscillator 振荡器Oxide 氧化物Oxidation 氧化Oxide passivation 氧化层钝化Package 封装Pad 压焊点Parameter 参数Parasitic effect 寄生效应Parasitic oscillation 寄生振荡Pass band 通带Passivation 钝化Passive component 无源元件Passive device 无源器件Passive surface 钝化界面Parasitic transistor 寄生晶体管Pattern 图形Payload 有效载荷Peak-point voltage 峰点电压Peak voltage 峰值电压Permanent—storage circuit 永久存储电路Period 周期Permeable — base 可渗透基区Phase—lock loop 锁相环Phase drift 相移Phonon spectra 声子谱Photo conduction 光电导Photo diode 光电二极管Photoelectric cell 光电池Photoelectric effect 光电效应Photonic devices 光子器件Photolithographic process 光刻工艺Photoluminescence 光致发光Photo resist (光敏)抗腐蚀剂Photo mask 光掩模Piezoelectric effect 压电效应Pin 管脚Pinch off 夹断Pinning of Fermi level 费米能级的钉扎(效应)Planar process 平面工艺Planar transistor 平面晶体管Plasma 等离子体Plane 平面的Plasma 等离子体Plate 板电路板P—N junction pn结Poisson equation 泊松方程Point contact 点接触Polarity 极性Polycrystal 多晶Polymer semiconductor 聚合物半导体Poly—silicon 多晶硅Positive 正的Potential (电)势Potential barrier 势垒Potential well 势阱Power electronic devices电力电子器件Power dissipation 功耗Power transistor 功率晶体管Preamplifier 前置放大器Primary flat 主平面Print-circuit board(PCB)印制电路板Probability 几率Probe 探针Procedure 工艺Process 工艺Projector 投影仪Propagation delay 传输延时Proton 质子Proximity effect 邻近效应Pseudopotential method 赝势法Pump 泵浦Punch through 穿通Pulse triggering/modulating 脉冲触发/调制Pulse Widen Modulator(PWM)脉冲宽度调制Punchthrough 穿通Push—pull stage 推挽级Q Q值Quality factor 品质因子Quantization 量子化Quantum 量子Quantum efficiency 量子效应Quantum mechanics 量子力学Quasi – Fermi-level 准费米能级Quartz 石英Radar 雷达Radiation conductivity 辐射电导率Radiation damage 辐射损伤Radiation flux density 辐射通量密度Radiation hardening 辐射加固Radiation protection 辐射保护Radiative — recombination 辐照复合Radio 无线电射电射频Radio—frequency RF 射频Raman 拉曼Random 随机Range 测距Radio 比率系数Ray 射线Reactive sputtering source 反应溅射源Real time 实时Receiver 接收机Recombination 复合Recovery diode 恢复二极管Record 记录Recovery time 恢复时间Rectifier 整流器(管)Rectifying contact 整流接触Red light 红光Reference 基准点基准参考点Refractive index 折射率Register 寄存器Regulate 控制调整Relative 相对的Relaxation 驰豫Relaxation lifetime 驰豫时间Relay 中继Reliability 可靠性Remote 远程Repeatability 可重复性Reproduction 重复制造Residual current 剩余电流Resonance 谐振Resin 树脂Resistance 电阻Resistor 电阻器Resistivity 电阻率Regulator 稳压管(器) Resolution 分辨率Response time 响应时间Return signal 回波信号Reverse 反向的Reverse bias 反向偏置Ribbon 光纤带Ridge waveguide 脊形波导Ring laser 环形激光器Rotary wave 旋转波Run 运行Sampling circuit 取样电路Sapphire 蓝宝石(Al2O3)Satellite valley 卫星谷Saturated current range 电流饱和区Scan 扫描Scaled down 按比例缩小Scattering 散射Schematic layout 示意图,简图Schottky 肖特基Schottky barrier 肖特基势垒Schottky contact 肖特基接触Screen 筛选Scribing grid 划片格Secondary flat 次平面Seed crystal 籽晶Segregation 分凝Selectivity 选择性Self aligned 自对准的Self diffusion 自扩散Semiconductor 半导体Semiconductor laser半导体激光器Semiconductor—controlled rectifier 半导体可控硅Sensitivity 灵敏度Sensor 传感器Serial 串行/串联Series inductance 串联电感Settle time 建立时间Sheet resistance 薄层电阻Shaping 成型Shield 屏蔽Shifter 移相器Short circuit 短路Shot noise 散粒噪声Shunt 分流Sidewall capacitance 边墙电容Signal 信号Silica glass 石英玻璃Silicon 硅Silicon carbide 碳化硅Silicon dioxide (SiO2)二氧化硅Silicon Nitride(Si3N4) 氮化硅Silicon On Insulator 绝缘体上硅Silver whiskers 银须Simple cubic 简立方Simulation 模拟Single crystal 单晶Sink 热沉Sinter 烧结Skin effect 趋肤效应Slot 槽隙Slow wave 慢波Smooth 光滑的Subthreshold 亚阈值的Solar battery/cell 太阳能电池Solid circuit 固体电路Solid Solubility 固溶度Solution 溶液Sonband 子带Source 源极Source follower 源随器Space charge 空间电荷Space Craft 宇宙飞行器Spacing 间距Specific heat(PT) 比热Spectral 光谱Spectrum 光谱(复数) Speed—power product 速度功耗乘积Spherical 球面的Spin 自旋Split 分裂Spontaneous emission 自发发射Spot 斑点Spray 喷涂Spreading resistance 扩展电阻Sputter 溅射Square root 平方根Stability 稳定性Stacking fault 层错Standard 标准的Standing wave 驻波State—of-the—art 最新技术Static characteristic 静态特性Statistical analysis 统计分析Steady state 稳态Step motor 步进式电动机Stimulated emission 受激发射Stimulated recombination 受激复合Stopband 阻带Storage time 存储时间Stress 应力Stripline 带状线Subband 次能带Sublimation 升华Submillimeter 亚毫米波Substrate 衬底Substitutional 替位式的Superconductor 超导(电)体Superlattice 超晶格Supply 电源Surface mound表面安装Surge capacity 浪涌能力Switching time 开关时间Switch 开关Synchronizer 同步器,同步装置Synthetic—aperture 合成孔径System 系统Technical 技术的,工艺的Telecommunication 远距通信,电信Telescope 望远镜Terahertz 太赫兹Terminal 终端Template 模板Temperature 温度Tensor 张量Test 测试试验Thermal activation 热激发Thermal conductivity 热导率Thermal equilibrium 热平衡Thermal Oxidation 热氧化Thermal resistance 热阻Thermal sink 热沉Thermal velocity 热运动Thick— film technique 厚膜技术Thin— film hybrid IC 薄膜混合集成电路Thin-Film Transistor(TFT) 薄膜晶体Three dimension 三维Threshold 阈值Through Silicon Via 硅通孔Thyistor 晶闸管Time resolution 时间分辨率Tolerance 公差T/R module 发射/接收模块Transconductance 跨导Transfer characteristic 转移特性Transfer electron 转移电子Transfer function 传输函数Transient 瞬态的Transistor aging(stress) 晶体管老化Transit time 渡越时间Transition 跃迁Transition-metal silica 过度金属硅化物Transition probability 跃迁几率Transition region 过渡区Transmissivity 透射率Transmitter 发射机Transceiver 收发机Transport 输运Transverse 横向的Trap 陷阱Trapping 俘获Trapped charge 陷阱电荷Travelling wave 行波Trigger 触发Trim 调配调整Triple diffusion 三重扩散Tolerance 容差Tube 管子电子管Tuner 调节器Tunnel(ing) 隧道(穿)Tunnel current 隧道电流Turn - off time 关断时间Ultraviolet 紫外的Ultrabright 超亮的Ultrasonic 超声的Underfilling 下填充Undoped 无掺杂Unijunction 单结的Unipolar 单极的Unit cell 原(元)胞Unity— gain frequency 单位增益频率Unilateral-switch 单向开关Vacancy 空位Vacuum 真空Valence(value) band 价带Value band edge 价带顶Valence bond 价键Vapour phase 汽相Varactor 变容管Variable 可变的Vector 矢量Vertical 垂直的Vibration 振动Visible light 可见光Voltage 电压Volt 伏特Wafer 晶片Watt 瓦Wave guide 波导Wavelength 波长Wave—particle duality 波粒二相性Wear-out 烧毁Wetting 浸润Wideband 宽禁带Wire 引线Wire routing 布线Work function 功函数Worst—case device 最坏情况器件X-ray X射线Yield 成品率Zinc 锌。

ALow-VoltageCMOS...

ALow-VoltageCMOS...

A Low-Voltage CMOS Buffer for RF ApplicationsBased on a Fully-Differential Voltage-CombinerS. Abdollahvand, R. Santos-Tavares, and João GoesCTS-UNINOVA / Dept. de Eng. Electrotécnica e Computadores,Faculdade de Ciencias e Tecnologia, Universidade Nova de LisboaFCT Campus, 2829-517 Caparic, Portugal***********************,{rmt,jg}@univova.pt Abstract. This paper presents a new CMOS buffer circuit topology for radio-frequency (RF) applications based on a fully-differential voltage-combinercircuit, capable of operating at low-voltage. The proposed circuit uses acombination of common-source (CS) and common-drain (CD) devices. Thesimulation results show good levels of linearity and bandwidth. To improvetotal harmonic distortion (THD) a source degeneration technique is used. Theproposed circuit has been designed in a 130nm logic CMOS technology and itachieves a simulated gain of 1.54 dB, a bandwidth of 1.14 GHz for a totalpower dissipation of 13.34 mW, when driving an RF active probe (with 0.8 pFin parallel with 200 kΩ).Keywords: buffer, common-source, common-drain, RF, CMOS, low-voltage.1IntroductionIn recent years, there has been an increasing trend in incorporating complete systems in longer lasting battery-powered equipment which requires low power dissipation circuits [1]. Particularly, buffer circuits used as an important functional block of high performance communication systems, e.g. RF applications like drivers of passive switched-capacitor down-converter circuits. Circuit For this purpose is essential to provide good linearity in terms of both output level and intercept-point performance. Provided that the transient response of the buffer is fast enough, which implies a bandwidth greater than 1 GHz, errors will be minimal. Low levels of total harmonic distortion (THD) are also essential for compatibility with communication standards. Moreover, traditionally, buffers present a gain near equal to unit but always with some signal attenuation. Some examples are the elastic source-follower or the enhanced voltage-follower as proposed in [2].The objective of this paper is to propose a novel voltage buffer based on a voltage-combiner topology, i.e. a common-source/common-drain structure. It achieves a gain that can be designed in the range from 0 dB to 6 dB; the input impedance is equally high; and the parasitic capacitance of its inputs is low. For improving THD the source degeneration method has been used. The supply voltage variability was studied for 1.2 V ± 5% for three levels, i.e.,1.14 V, 1.2 V and 1.26 V. Since the voltage gain of612 S. Abdollahvand, R. Santos-Tavares, and J. Goesthe proposed circuit is higher than the unit, it is expected to compensate for the gain loss due to linearization of the circuit.2Internet-of-ThingsThe buffer circuit presented in this paper is an essential part of RF transceiver integrated circuits (a paramount building block in modems) and it can be used either for driving a passive down-converter or for on-chip built-in self-testing purposes. This circuit can be used as an interface to environmental data signals collectors such as temperature smart sensors. The circuit reading environmental data, passes the information to an Internet Web server to display temperature information. This way it can contribute to Internet of Things.3Proposed Circuit Basic ConceptThe basic idea of voltage-combiner (VCOM) technique is depicted in Fig. 1. It basically employs a combination of NMOS transistors in configuration of common-source, M Y, and common-drain, M X. High input impedance is equally accomplished.Fig. 1. VCOM circuit conceptual ideaAfter simplifying the small signal equivalent (differential-mode, DM) of the VCOM and substituting the components by their Y-parameter equivalents, the behavioral signal path model [3] is extracted and illustrated in Fig. 2 (for simplicity only half the circuit is shown).Fig. 2. Behavioral signal path model of the voltage combiner stage (for simplicity only half the circuit is shown)A Low-Voltage CMOS Buffer for RF Applications 613 This model permits large insight in the small-signal behavior of the amplifier and is a fundamental tool in the extraction of the differential gain transfer function. It is possible to verify: the Miller effect through parasitic capacitance cgd 1, the pole(s) and zero(s), and the order of the transfer function (in this case, 1st order).Using the behavioral signal path model described in Fig. 2 and writing the equations for I O 1 and V O , it is possible to extract the transfer function of the VCOM. For the sake of simplicity, minor simplifications were used in the derived equations:1Y X gds gds gds =+(1)1Y X cdb cdb cdb =+ (2)Body effect of transistors M Y and M X has been neglected, for the sake of simplicity, But it can be easily included into the equations.()()11TF VCOM Y X X Y X X Y gm gm cgs cgd sgm gds cdb cgs cgd s =++−⋅=++++⋅ (3)From the transfer function it is possible to obtain the low-frequency open-loop gain (DC gain) of the VCOM stage, A VCOM ,1Y X VCOM X gm gm A gm gds +=+ (4)considering that gm X >> gds 1, a good approximation can be given by,1,1Y VCOM VCOM X gm A A gm ⎛⎫≈+> ⎪⎝⎭ (5)Sizing the circuit to attain gm 13 ≈ gm 12, 6 dB are added in the overall DC gain of the amplifier.Also, the dominate pole, ωp1VCOM , is computed using:111VCOM X P X Y gm gds cdb cgs cgd ω+=++ (6)The gain-bandwidth product performance parameter of this buffer (GBW) can be expressed by1GBW .Y X VCOM X Y gm gm cdb cgs cgd +=++ (7)614 S. Abdollahvand, R. Santos-Tavares, and J. Goes4Complete Circuit Description, Linearization and Simulation Results4.1Circuit DescriptionThe proposed fully-differential voltage combiner buffer circuit (VCOM) is shown in Fig. 3.Fig. 3. Proposed input fully differential voltage combiner circuit (VCOM) (Biasing circuitry not shown for simplicity)It consists of a cross-coupled (i.e. NMOS and PMOS) fully-differential buffer. The differential voltage-combiner is represented by M12, M13, M19 and M18 in CD and CS configurations, respectively. The remaining transistors are simple PMOS current-sources (M11, M16, M17) and NMOS current-sources (M14, M15 and M10). The circuit structure is duplicated to complete the cross-coupled fully-differential circuit. As stated before, in order to linearize the circuit, following the sourceA Low-Voltage CMOS Buffer for RF Applications 615 degeneration resistors presented earlier, two resistors, RLIN1 and RLIN2, were added to improve the THD of both the odd and even harmonics. Furthermore, two capacitances, CLIN1 and CLIN2, were also added to filter the even harmonics. For the output signal AC coupling were used four capacitances: C11, C12, C21, and C22. To minimize the power consumption and area, transistors widths and current in the biasing circuit are scaled down by a factor of ten with respect to the main amplifier circuit.4.2Linearization TechniqueNonlinearity of the MOS transistors limits the circuit linearity (dynamic related with THD) between -40 dB and -60 dB [4]. In order to reach better linearity performance, resistor-based degeneration can be used [5]. The resistive source degeneration (RLIN1 and RLIN2) method is used to enhance the linear range of the transconductor (CS devices, M13, M23, M19 and M29, operating in a degenerated differential-pair fashion) circuit through transconductance reduction. The degeneration resistor increases the source terminal of the transistors, reducing the drain current [6]. Furthermore, in order to reduce odd harmonics, capacitive coupling has also been employed (through capacitors CLIN1 and CLIN2).4.3Simulation ResultsThe circuit proposed here (the circuit shown in Fig. 1) was designed in a 130 nm high-speed CMOS technology (Lmin = 120 nm). The mobility and threshold parameters (Level 2), KN, KP, VTN and VTP parameters of the devices are, respectively, 525 mAV-2, 145 mAV-2, 0.38 V and -0.33 V. For VCMI, the value of 550 mV was used. The linearization elements, source degeneration resistors are 75 Ωand the capacitances are 0.2 pF. Three voltage values were used as supply voltage of the circuit: 1.14 V, 1.2 V, and 1.26 V.Table 1 shows the summary of the simulation results of the relevant performance parameters.Table 1. Key simulated performance parametersnmTechnology 130Supply Voltage 1.2 VDC Gain 1.54 dBf-3dB(@ CL = 0.8 pF1.14 GHzand RL = 200 kΩ)Total input89.64 fFcapacitance, C piTotal current11.40 mATotal power13.34 mWdissipation616 S. Abdollahvand, R. Santos-Tavares, and J. GoesThe simulation results were obtained using HSPICE simulator. In nominal conditions, using a supply voltage of 1.2 V, the simulated amplifier achieves a DC gain of about 1.54 dB, a bandwidth with a frequency cutoff, f-3dB, of 1.14 GHz and a power dissipation of 13.34mW.Figure 4 shows the bode plot indicating the DC gain and bandwidth for a voltage supply of 1.2 V, 1.54 dB and 1.14 GHz, respectively. In order to compare the key performance parameters (KPP) of the buffer over a wide positive-power supply variation [1.14 V to 1.26 V]: distortion (THD) (Fig. 5), DC Gain (Fig. 6), cutoff bandwidth (Fig. 7) and dissipated power (Fig. 8). The KPP results are evaluated for the linearized circuit, which employs resistive and capacitive source degeneration (Fig. 3).Fig. 4. Bode Plot @ Vdd = 1.2 VFigure 5 shows the results of the THD of the linearized circuit for a fully differential input signal range from 20 mV to 400 mV with an input frequency of 250MHz.The |THD| value is above 42 dB for input amplitude voltage until 120 mV and a supply voltage of 1.26 V. For a supply voltage of 1.14 V the input amplitude voltage can go up to 200 mV for the |THD|. The circuit presents a better THD value for lower supply voltage.The DC gain increases approximately logarithmically (i.e. linearly in dB) with the supply voltage, from 0.66 dB to 2 dB, as shown in the Fig. 6.Figure 7 displays the cutoff bandwidth results. The better results are for the lower power supply voltage. Also, the input signal amplitude does not influence the bandwidth result. The power dissipation is only dependent on power supply voltage, as expected. Figure 8 shows that higher supply voltages originate higher power supply losses. Again, the variation of input signal amplitude does not influence the power dissipation.A Low-Voltage CMOS Buffer for RF Applications 617Fig. 6. Low-frequency (DC) gain vs. supply voltageFig. 7. Cutoff bandwidth vs. supply voltageFig. 8. Power dissipation vs. supply voltage-1-0.50.511.522.531.14 1.2 1.26A v [d B ]Vdd [V]110011201140116011801200122012401260128013001.14 1.21.26B W [M H z ]Vdd [V]11.9012.4012.9013.4013.9014.401.14 1.21.26P o w e r [m W ]Vdd [V]618 S. Abdollahvand, R. Santos-Tavares, and J. Goes5ConclusionsThis paper presented a new CMOS buffer circuit topology for RF applications based on a fully-differential voltage-combiner circuit, operating at low-voltage. The proposed circuit uses a combination of CS and CD transistors. The simulation results show good levels of linearity and bandwidth. For improved THD the source degeneration method was employed. Using the proposed CS and CD fully-differential structure, the circuit achieves, in nominal conditions, a simulated gain of 1.54 dB, a bandwidth of 1.14 GHz for a total power dissipation of 13.34 mW. Acknowledgments. This work was supported by national funds through FCT - Fundaçãopara a Ciência e Tecnologia under projects PEst-OE/EEI/UI0066/2011 and IMPACT (PTDC/EEA-ELC/101421/2008).References1.Tavares, R., Vaz, B., Goes, J., Paulino, N., Steiger-Garcao, A.: Design and optimization oflow-voltage two-stage CMOS amplifiers with enhanced performance. In: IEEE Int. Symp.Circuits and Systems (ISCAS 2003), vol. 1, pp. I-197–I-200 (2003)2.Carmona, J., Cortadella, J., Kishinevsky, M., Taubin, A.: Elastic Circuits. IEEETransactions on Computer-Aided Design of Integrated Circuits and Systems (TCAD) 28(10) (2009)3.Leyn, F., Daems, W., Gielen, G., Sansen, W.: A behavioral signal path modelingmethodology for qualitative insight in and efficient sizing of CMOS opamps. In: CAD, Dig, of Tech. Papers, pp. 374–381 (1997)4.Leuciuc, A., Zhang, Y.: A highly linear low-voltage MOS transconductor. In: IEEE Int.Symp. Circuits and Systems (ISCAS 2002), vol. 3, pp. III-735- III-738 (2002)5.El mourabit, A., Sbaa, M.H., Alaoui-Ismaili, Z., Lahjomri, F.: A CMOS Transconductorwith High Linear Range. In: ICECS 2007, pp. 1131–1134 (2007)6.Kuo, K.-C., Leuciuc, A.: A linear MOS transconductor using source degeneration andadaptive biasing. IEEE TCAS II: Analog and Digital Signal Processing 48(10), 937–943 (2001)。

无刷驱动电路的自举电容

无刷驱动电路的自举电容

无刷驱动电路的自举电容英文回答:Bootstrap Capacitors in Brushless Drive Circuits.Bootstrap capacitors play a crucial role in the operation of brushless drive circuits, enabling theefficient control of brushless motors. These capacitors are responsible for providing the necessary voltage boost to the gate driver, allowing it to drive the power transistors that control the motor.The operation of a bootstrap capacitor can be explained as follows:1. Charging: During the off-time of the power transistor, the bootstrap capacitor is charged to the supply voltage through a charging diode.2. Boosting: When the power transistor turns on, thecapacitor is connected in series with the gate-source terminal of the power transistor, providing a voltage boost to the gate. This voltage boost ensures that the power transistor is fully turned on, reducing conduction losses.3. Discharging: Once the power transistor turns off, the capacitor discharges through a discharge resistor, resetting the gate voltage to the ground level.The selection of the bootstrap capacitor is criticalfor optimal performance. Factors to consider include:Capacitance: The capacitance of the capacitor determines the amount of charge it can store and the voltage boost it can provide.Voltage Rating: The voltage rating of the capacitor must be higher than the maximum supply voltage to prevent damage.Equivalent Series Resistance (ESR): The ESR of the capacitor affects the charging and discharging timeconstants, influencing the efficiency and speed of the drive circuit.中文回答:无刷驱动电路的自举电容。

Panasonic PGS Graphite和导电电容器多面性支持热和噪声管理,适用于各种设备说明书

Panasonic PGS Graphite和导电电容器多面性支持热和噪声管理,适用于各种设备说明书

Panasonic's PGS Graphite Sheet and Conductive CapacitorMulti-faceted Support for Thermal and Noise Management Using a Variety of DevicesFig. 1. The PGS graphite, which diffuses heat efficientlyFig. 2. Combined products for solving various thermal issuesFig. 4. Common mode noise filterFig. 5. multilayer chip varistorFig. 3. Conductive capacitors that contribute to noise management and space savingConductive polymer tantalum solid capacitor "POSCAP" (left)The use of conductive capacitors reduces approx. 70% of therequired capacitor mounting space of power supply smoothing circuits.Contribute to reducing components used for noise management (right)With thermal managementWithout thermal managementHeat storageSmartphone, tablet terminalThermal insulation Battery, wearable terminal Thermal absorptionBase station, digital still cameraHeat transportMotor, measuring instrumentDevice Solutions Business Division Industrial Business, Automotive & Industrial Systems CompanyFeature ① Thin ② Flexible③ High thermal conductivityMultilayer PGSPGS graphite sheet/ww/ds/introThe constant progress of electronic devices has once again put the spotlight on thermal and noise issues. This is against the backdrop of the digital LSI mounting environment getting diverse while the number of systems containing high-speed digital LSI is increasing to meet the demand for higher functions. In other words, while thermal and noise issues due to digital LSIs are increasing, more application usages demand more stringent requirements than ever in terms of heat and noise. Electronic devices that offer advanced thermal and noise management solutions are finding greater need under such circumstances. Panasonic's PGS graphite sheet and conductive capacitor are one example.Addressing Thermal Issues That Are More Sophisticated Than EverThe PGS graphite sheet for thermal management is made by processing graphite, which has high thermal conductivity, into thin sheets of 10 μm to 100 μm in thickness (Fig. 1). Ordinary graphite sheets are made of natural graphite, whereas the PGS graphite sheet uses artificial graphite having a structure close to a single crystal, formed using Panasonic's unique process of treating polymer film at high temperatures. Its thermal conductivity is two to four times higher than natural graphite sheets and helps transfer or disperse heat while being in close contact with the heat source. It is already used in various devices including smartphones, notebook PCs, tablet terminals, digital still cameras, base stations, data centers, head up displays (HUD), and LED lamps, and is also being increasingly adopted in fields such as automotive, industrial devices, and communication infrastructure as an effective thermal management device.Meanwhile, Panasonic proposes combined uses of the PGS graphite sheet, as its applications expand, to address newly emerging issues. Specifically, combined products include "Multilayer PGS", "Thermal Storage Sheet (TSS)", "Semi Sealing Material (SSM)," as well as the newly developed high-performance heat insulation sheet "NASBIS (NAno Silica Balloon InSulator)".The multilayer PGS with an enhanced heat transport capacity is expanding its applications into motors and measur-ing instruments. The TSS, which starts storing heat at a predetermined temperature and continues to absorb heat up to its full heat capacity, is able to suppress rapid temperature rises. Using it for the heat dissipation of proces-sors will extend the duration of high frequency operations, i.e. duration of crisp and smooth smartphone operations. The SSM, which con-sists of stacked elastomer and PGS graphite sheet, diffuses heat from its concavo-convex surface. The elastomer layer absorbs heat and the PGS graphite sheet diffuses the absorbed heat. This mecha-nism serves as thermal manage-ment for base stations and digital still cameras, .The NASBIS-com-bined products offer various benefits including thermal control and heat insulation. For example, it makes wear-able terminals more energy-efficient. The PGS graphite sheet diffuses heat, while the NASBIS layer controls the heat dissipation direction, improving the heat utilization efficiency. They also help suppress local temperature rises, which are more likely to occur in devices that keep getting smaller and thinner.Low-ESR Products Help Break the Downsizing BarriersConductive capacitors that use highly conductive polymer material for cathodes serve noise management (Fig. 3). They feature low equivalent series resistance (ESR) and equivalent series inductance (ESL). They play an active role in noise management for various devices such as mobile devices, network servers, storage, liquid crystal displays, and automotive devices and also contribute to reducing the number of components. This is because a full lineup of low-ESR, low-ESL, and large-capacity products allow a smaller number of conductive capacitors to replace components such as multilayer ceramic capacitors and electrolytic capacitors for noise management.Panasonic is expanding its conductive capacitor models, anticipating the future need in, for example, automotive, mobile, industrial devices, and communication infrastructure fields. One example is a product developed for communication devices, which are increasingly smaller and more reliable with the widespread use of small cells, that guarantees 1000 operating hours at an ambient temperature of 125°C (estimated service life of 10 years at 85°C). Another example is ultra-small large-capacity products for mobile devices. The automotive lineup is expanding to meet the increasing need for conductive capacitors due to the trend toward electronically-driven vehicles.Panasonic offers diverse solutions using its full lineup of thermal and noise management devices (See separate columns). Taking advantage of these edges, Panasonic intends to proactively respond to the demand for thermal and noise management in automotive, mobile, industrial devices, and communication infrastructure fields.Panasonic offers various types of thermal and noise management devices. Thermal management products include the PGS graphite sheet and NTC thermistor. Noise management products include capacitors, electromagnetic compatibility (EMC) management components such as common mode noise filters, EMI filters, and electromagnetic shield films, and circuit protection components such as ESD suppressors and chip varistors.Many of these products have unique features. One example is a filter that removes common mode noise (Fig. 4). Its major feature is the adoption of a multilayer structure formed using Panasonic's unique process of stacking a ferrite sheet, a non-magnetic sheet, coils, etc., and baking them collectively to achieve downsizing. Combinations of the multilayer structure and coil patterns allow a product lineup that supports a wide frequency of high-speed signals.Multilayer chip varistors including the 0402-sized small and tandem types also indicate Panasonic's excellent technologies (Fig. 5). Their uniquely developed varistor materials with different dielectric constants allow for a product lineup covering wide-ranging applications.Panasonic provides various solutions based on suppression devices. Most of them are superior precisely because of Panasonic's wide variety of products.With Thermal and Noise Problems Entering a New Phase, High-function Management Devices Are Drawing AttentionThermal and noise management is essential in the design of any electronic device. However, designers are now facing increasingly sophisticated and complex issues due to the progress in various fields such as automotive, mobile, industrial devices, and communication infrastructure as the information communication technology (ICT) develops, with the emergence of issues that cannot be solved with conventional methods. Here, I'd like to introduce some of the Panasonic devices that play a significant role in thermal and noise management in this new phase.。

核污水处理器 发明 英语作文

核污水处理器 发明 英语作文

核污水处理器发明英语作文Nuclear Wastewater Treatment: The Development of Innovative Solutions.Nuclear power plants generate vast quantities of wastewater that must be carefully treated before being released into the environment. This wastewater contains radioactive isotopes, which can pose significant health and environmental risks if not properly managed. Over the past several decades, researchers and engineers have dedicated extensive effort to developing innovative technologies for treating nuclear wastewater, aiming to ensure the safety and sustainability of nuclear energy production.Traditional Treatment Methods.The traditional approach to nuclear wastewater treatment involves a series of physical and chemical processes designed to remove or neutralize radioactive contaminants. These methods typically include:Filtration: To remove suspended solids and particulate matter from the wastewater.Ion exchange: To selectively adsorb and concentrate radioactive ions onto a resin bed.Coagulation and flocculation: To destabilize and agglomerate radioactive particles, making them easier to remove.Sedimentation: To allow the agglomerated particles to settle out of the wastewater.Evaporation: To concentrate the radioactive contaminants in a smaller volume of liquid.While traditional treatment methods have proven effective in removing a significant portion of radioactive contaminants, they can be expensive, energy-intensive, and generate secondary waste streams that require further management. In recent years, the focus has shifted towardsdeveloping more efficient and sustainable treatment technologies.Advanced Treatment Technologies.Advanced treatment technologies for nuclear wastewater utilize a range of innovative approaches to achieve higher levels of contaminant removal and reduce environmental impact. Some of the most promising developments in this field include:Membrane Filtration: Using semipermeable membranes to separate radioactive contaminants from the wastewater. Membranes can be designed to selectively remove specific contaminants, such as cesium and strontium.Advanced Oxidation Processes (AOPs): Employing powerful oxidants, such as ozone or hydrogen peroxide, to chemically break down organic radioactive contaminants into harmless substances.Biological Treatment: Utilizing microorganisms todecompose and degrade organic radioactive contaminants, transforming them into less harmful forms.Photocatalytic Degradation: Harnessing the power of ultraviolet light and photocatalysts to degrade organic radioactive contaminants, utilizing the principles of photochemistry.Sorption-Enhanced Filtration: Combining conventional filtration with the use of sorbents, such as activated carbon or zeolites, to enhance the removal of radioactive contaminants.Emerging Technologies on the Horizon.Research and development efforts continue to push the boundaries of nuclear wastewater treatment, with several emerging technologies showing great promise for the future:Nanotechnology: The use of nanoparticles and nanomaterials to develop advanced sorbents and catalytic systems for contaminant removal.Electrochemical Processes: Employing electrochemical techniques, such as electrocoagulation and electrodialysis, to separate and concentrate radioactive contaminants.Microwave and Radiofrequency Heating: Utilizing high-frequency electromagnetic radiation to heat and decompose organic radioactive contaminants, accelerating their degradation.Artificial Intelligence (AI): Incorporating AI algorithms into wastewater treatment systems to optimize performance, predict contaminant levels, and identify potential risks.By harnessing the power of these innovative technologies, nuclear wastewater treatment can become more efficient, sustainable, and capable of achieving even higher levels of contaminant removal.Environmental and Societal Benefits.The development of advanced nuclear wastewater treatment technologies offers significant environmental and societal benefits:Reduced Radiological Risks: More effective treatment methods minimize the release of radioactive contaminants into the environment, protecting human health and ecosystems.Sustainable Water Management: Efficient wastewater treatment reduces the volume of liquid waste requiring disposal, conserving water resources.Increased Public Confidence: Advanced treatment technologies enhance public confidence in the safety and environmental responsibility of nuclear energy production.Support for the Nuclear Industry: The availability of cost-effective and environmentally sound wastewater treatment solutions supports the continued growth and viability of the nuclear industry.Collaboration and Knowledge Sharing: Research and development in nuclear wastewater treatment foster international collaboration and knowledge exchange, advancing the field globally.Conclusion.The development of innovative nuclear wastewater treatment technologies is essential for the sustainable and responsible utilization of nuclear energy. By embracing advanced and emerging treatment methods, we can minimize environmental risks, protect human health, and ensure the long-term viability of nuclear power as a clean andreliable source of energy. Continued research and investment in this critical field will pave the way for a cleaner and more sustainable future.。

片式单层陶瓷电容英语

片式单层陶瓷电容英语

片式单层陶瓷电容英语When it comes to electronics, the chip-type single-layer ceramic capacitor is a must-have component. It's tiny but mighty, fitting into tight spaces and offering stable performance.You know, those little ceramic capacitors are surprisingly robust. They can handle a decent amount of voltage and current without breaking a sweat. Plus, the single-layer design keeps things simple yet effective.For those of you who like to tinker with electronics, dealing with ceramic capacitors is a breeze. They're easy to solder on, and their compact size means you can fit more components on your board.Hey, did you know that ceramic capacitors are great for high-frequency applications? Their low inductance and capacitance make them perfect for filtering out unwanted noise and ensuring clean signals.And let's not forget about their temperature stability. Whether it's a hot summer day or a cold winter night, ceramic capacitors maintain their performance, ensuringyour electronics work flawlessly.So there you have it, a quick snapshot of the chip-type single-layer ceramic capacitor. Tiny, powerful, andreliable – it's the unsung hero of many electronic devices.。

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978-1-4244-2487-0/09/$25.00 ©2009 IEEE
Authorized licensed use limited to: XIDIAN UNIVERSITY. Downloaded on November 6, 2009 at 12:52 from IEEE Xplore. Restrictions apply.
CM
V1
m1Vin C1 R1 -gm4V1
C4 R4 gm2V1
C2 R2
-gm3V2 Cpar R3
Figure 2. Small-signal model of the DFCFC LDO structure
Fig. 2 illustrates the small signal model of this LDO. gmi, Ri and Ci represent the transconductance, output resistance,
Equation (1) can equal to
G(S) ≈
Adc¨¨©§1
+
S Z1
¸¸¹·¨¨©§1 +
S Z2
¸¸¹·
¨¨©§1 +
S P1
¸¸¹·«¬ª1+ S
(CM + Cpar)gm4C2 gm2 gm3CM
II. PROPOSED LDO TOPOLOGY
The structure of the proposed LDO is shown in Fig. 1, including a high gain error amplifier as the first stage, a large swing range buffer as the second stage, a PMOS pass device, a resistance feedback network, and DFC block between the first and second stage.
Considering relatively poor stability of cap-less LDO, our study used Miller compensation technology to set a low frequency dominant pole internally, and configured two other non-dominant poles slightly higher than unity gain frequency(UGF) by DFC block. LDO loop could have only one pole within UGF, and have a proper phase margin, so as to assure system stability and optimize its dynamic performance. The circuit designed by HHNEC 0.25um CMOS technology, was applied to the target SoC chip, to solve the problem of its different regions power supply.
Wuhan, China seion@
Abstract—Stability is the major obstacle for capacitor-less lowdropout regulator (LDO). By using Miller compensation, a low frequency dominant pole is internally generated, and two other non-dominant poles, which frequency are higher than unity gain frequency (UGF), can be configured by Damping-Factor-Control (DFC) block. With opposed zero cancellation, single pole system is formed before UGF and satisfied phase margin is achieved, hence both the system stability and optimized transient performance are ensured. Based on DFCFC, a 1.8V 100mA capacitor-less LDO was designed by using HHNEC 0.25ȝm standard CMOS process in this paper. Simulation results showed that the improved regulator could provide a full load transient response of 2ȝs settling time and both overshoots and undershoots less than 70mV. Furthermore, 50mV dropout voltage, 40ȝA quiescent current, and smaller compensation capacitors cater to low power and low cost SoC application.
Keywords-LDO; Capacitor-less; frequency compensation; DFC
I. INTRODUCTION
Low-dropout voltage regulator (LDO) has been characterized by its low noise, high accuracy and fast-response performance and thereby is widely utilized in many electronic products. With System-on-Chip (SoC) technology developing, LDO design has become more challenging due to the requirement of removing output capacitor. Traditional LDO relies mainly on its output capacitor and equivalent series resistance (ESR) which together form a left-half-plane (LHP) zero[1, 2] to ensure stability. Thus both of them increases the utilization complexity of LDO because application engineer must choose the output capacitor with proper ESR. Additionally, the capacitor takes more PCB area and raises hardware cost. Especially, more than one LDO is adopted to fulfill the requirements of different modules in SoC, achieving optimization of local performance and total efficiency. As the development of SoC’s scale and complexity, chip leads and peripheral components have to be reduced, so as to cut down the cost of manufacture and application. Therefore, it becomes a tendency to utilize capacitor-less LDO[3-6] in SoC.
G(S) ≈
gm1gm2 gm3R1R2 R3¨¨©§1 − S
CM gm2 gm3R2

S2
CM C2 g g m2 m3
¸¸¹·
.
(1)
S 3R1R2R3CM C2Cpar + S 2 R1R2 R3C2 (CM + C par )gm4 + SR1R2R3CM1gm3gm2 + (1 + gm4R1)
Recently, some studies on the design of cap-less LDO stability have been taken and made great achievements, such as low turn-on resistance pass device technology[7], Pole-Control frequency compensation(PCFC)[2], dynamic zero compensation[6], multi-zero-ploe pairs compensation[3], active
This work was supported by the National High Technology Research and Development Program (863) of China (2006AA01Z226)
capacitor compensation[5], Damping-Factor-Control (DFC) compensation[6], etc. However, dynamic performance and light load stability still need to be improved.
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