w8nb90参数资料
MT9090中文资料
Mainframe
µOTDR Module
外 彩色显示屏 2) 执行任务用的专用功能键
66) Menu 键容易进入设置和大容量 存储
7 可视激光二极管 ( 选项 )
3 Start 键是真正一键测试
88) OTDR 接口
4
4 箭头键用于缩放,光标移动和
( 集成功率计选项 ) 99) 双 USB 接口用于快速容易的数据
5
菜单导航
传送
78
2 Product Brochure l MU909014x/15x
一台真正创新型 OTDR!
介绍第一台没有牺牲性能的手持光时域反射仪 – 来自安立的新型 µOTDR 模块™ ! 其性能与尺寸大 4 倍、价格贵 2 倍的传统 OTDR 匹敌, Network Master MT9090A µOTDR 成为新一代测试仪表。其特点 :5 cm 的分辨率用于事件的精确定位,小于 1 米(3 英尺)的盲区和 37dB 的 动态范围 – 能测试超过 150 km (90 以上英里 ) 光纤。MT9090A µOTDR 是第一台真正手掌尺寸的手持 OTDR,将便携性提高到新的水平。.
±2 dB
±1 m ±3 × 测量距离 × 10–5 ± 标记分辨率 ( 不包括 IOR 不确定度 )
内存 : 20 MB (<1,000 条曲线 )
外部 (USB 存储器 ): 1 GB (<30,000 条曲线 )
FQP90N08中文资料
7000 6000 5000 4000 3000 2000 1000
0 10-1
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd
C iss
Coss
Crss
※ Notes :
1. VGS = 0 V 2. f = 1 MHz
100
Crss
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V, f = 1.0 MHz
-- 2500 3250 pF
-- 900 1170 pF
-- 200 260
pF
Switching Characteristics
td(on)
Turn-On Delay Time
V GS
Top : 15.0 V
10.0 V
102
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
101
100 10-1
※ Notes : 1. 250μs Pulse Test 2. T = 25℃
C
100
101
V , Drain-Source Voltage [V] DS
元器件交易网
FQP90N08
FQP90N08
80V N-Channel MOSFET
January 2001
QFETTM
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for low voltage applications such as automotive, high efficiency switching for DC/DC converters, and DC motor control.
STH8NB90中文资料
1/9July 2001STW8NB90STH8NB90FIN-CHANNEL 900V - 1.1 Ω - 8 A TO-247/ISOWATT218PowerMesh™ MOSFETs TYPICAL R DS (on) = 1.1 Ωs EXTREMELY HIGH dv/dt CAPABILITY s 100% AVALANCHE TESTEDs VERY LOW INTRINSIC CAPACITANCES sGATE CHARGE MINIMIZEDDESCRIPTIONUsing the latest high voltage MESH OVERLAY ™process, STMicroelectronics has designed an ad-vanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprieraty edge termi-nation structure, gives the lowest R DS(on) per area,exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteris-tics.APPLICATIONSs HIGH CURRENT, HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS)s DC-AC CONVERTERS FOR WELDING EQUIPMENT ABSOLUTE MAXIMUM RATINGS(•)Pulse width limited by safe operating area(1)I SD ≤8 A, di/dt ≤200A/µs, VDD ≤ V (BR)DSS , T j ≤ T JMAX.TYPE V DSS R DS(on)I D STW8NB90900 V < 1.45 Ω8 A STH8NB90FI900 V< 1.45 Ω5 ASymbol ParameterValueUnit STW8NB90STH8NB90FIV DS Drain-source Voltage (V GS = 0)900V V DGR Drain-gate Voltage (R GS = 20 k Ω)900V V GS Gate- source Voltage±30V I D Drain Current (continuos) at T C = 25°C 85A I D Drain Current (continuos) at T C = 100°C 53A I DM (q )Drain Current (pulsed)3220A P TOT Total Dissipation at T C = 25°C 20080W Derating Factor1.60.64W/°C dv/dt (1)Peak Diode Recovery voltage slope 4V/ns V ISO Insulation Withstand Voltage (DC)-2500V T stg Storage Temperature–65 to 150°C T jMax. Operating Junction Temperature150°CSTW8NB90 - STH8NB90FI2/9THERMAL DATAAVALANCHE CHARACTERISTICSELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFON (1)DYNAMICTO-247ISOWATT218Rthj-case Thermal Resistance Junction-case Max 0.6251.56°C/W Rthj-ambThermal Resistance Junction-ambient Max30°C/W T lMaximum Lead Temperature For Soldering Purpose300°CSymbol ParameterMax ValueUnit I AR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max)8A E ASSingle Pulse Avalanche Energy(starting T j = 25 °C, I D = I AR , V DD = 50 V)700mJSymbol ParameterTest ConditionsMin.Typ.Max.Unit V (BR)DSS Drain-sourceBreakdown Voltage I D = 250 µA, V GS = 0900V I DSS Zero Gate VoltageDrain Current (V GS = 0)V DS = Max Rating1µA V DS = Max Rating, T C = 125 °C 50µA I GSSGate-body Leakage Current (V DS = 0)V GS = ±30V±100nASymbol ParameterTest ConditionsMin.Typ.Max.Unit V GS(th)Gate Threshold Voltage V DS = V GS , I D = 250 µA 345V R DS(on)Static Drain-source On ResistanceV GS = 10 V, I D = 4 A1.11.45ΩSymbol ParameterTest ConditionsMin.Typ.Max.Unit g fs (1)Forward Transconductance V DS > I D(on) x R DS(on)max, I D =4 A8S C iss Input Capacitance V DS = 25V, f = 1 MHz, V GS = 02120pF C oss Output Capacitance 225pF C rssReverse Transfer Capacitance23pF3/9STW8NB90 - STH8NB90FIELECTRICAL CHARACTERISTICS (CONTINUED)SWITCHING ONSWITCHING OFFSOURCE DRAIN DIODENote: 1.Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.2.Pulse width limited by safe operating area.Symbol ParameterTest ConditionsMin.Typ.Max.Unit t d(on)Turn-on Delay Time V DD = 450 V, I D = 3.5 A R G =4.7Ω V GS = 10 V (see test circuit, Figure 3)25ns t r Rise Time 12ns Q g Total Gate Charge V DD = 400V, I D = 9A,V GS = 10V4672nC Q gs Gate-Source Charge 12.5nC Q gdGate-Drain Charge18nCSymbol ParameterTest ConditionsMin.Typ.Max.Unit t r(Voff)Off-voltage Rise TimeV DD = 720V, I D = 7.4 A, R G =4.7Ω, V GS = 10V (see test circuit, Figure 5)22ns t f Fall Time 15ns t cCross-over Time31nsSymbol ParameterTest ConditionsMin.Typ.Max.Unit I SD Source-drain Current 8A I SDM (2)Source-drain Current (pulsed)32A V SD (1)Forward On Voltage I SD = 8 A, V GS = 01.6V t rr Reverse Recovery Time I SD = 7.4 A, di/dt = 100A/µs, V DD = 100V, T j = 150°C (see test circuit, Figure 5)700ns Q rr Reverse Recovery Charge 6.3µC I RRMReverse Recovery Current18ASTW8NB90 - STH8NB90FI4/9Output Characteristics5/9STW8NB90 - STH8NB90FISTW8NB90 - STH8NB90FI6/9Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery TimesFig. 4: Gate Charge test CircuitFig. 2: Unclamped Inductive WaveformFig. 1:Unclamped Inductive Load Test CircuitFig. 3: Switching Times Test Circuit ForResistive LoadSTW8NB90 - STH8NB90FI7/9STW8NB90 - STH8NB90FI8/9STW8NB90 - STH8NB90FIInformation furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequencesof use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics productsare not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.The ST logo is a trademark of STMicroelectronics© 2000 STMicroelectronics – Printed in Italy – All Rights ReservedSTMicroelectronics GROUP OF COMPANIESAustralia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco -Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.9/9。
W80成分及性能
类别:特殊铜
牌号:W80
基本情况:
欧标W80铜钨合金综合铜和钨的优点:
高强度,高比重,耐高温,耐电弧烧蚀,导电电热性能好,加工性能好,采用高导电电热性能好,加工性能好,采用高品质钨粉及无氧铜粉,欧标应用等静压成型(高温烧结-渗铜),保证产品纯度及准确配比,组织细密,性能优异.断弧性能好,导电性好,导热性好,热膨胀小。
化学成份:
铜Cu%(WT):20±2
钨钛WC%(WT):Balance
力学性能:
RWMAClass:12
密度(Min):15.15g/cm3
导电率(Min):34%IACS
硬度(Min):220HB
导热系数:190~210(W/mK)
热膨胀系数:8.0~8.5(10-6/K)
特性与应用:
铜钨合金综合铜和钨的优点,高强度,高比重,耐高温,耐电弧烧蚀,导电导热性能好,加工性能好,ANK钨铜合金采用高品质钨粉及无氧铜粉,
应用等静压成型-(高温烧结)-渗铜,保证产品纯度及准确配比,组织细密,性能优异。
本司铜钨系国内优质钨铜合金材料,极适合应用于高硬度
材料及薄片电极放电加工,电加工产品表面光洁度高,精度高,损耗低,有效节约电极材料提高放电加工速度并改善模具精度。
热处理:
钨铜选用精细钨、铜粉末,经一流浸透烧结工艺精制而成,可承受近2000度高温和高应力,具有高熔点、高硬度、抗烧损和良好抗粘附性,
电蚀产品表面光洁度高,精度极高,损耗低。
钨铜广泛用作高压,超液压开关和断路器的触头,保护环,用于电热墩粗砧块材料,自动埋弧焊导电咀,等离子切割机喷嘴,电焊机,对焊机的焊头,
滚焊轮,封气卯电极和点火花电极,点焊,碰焊材料等.。
MDT-08B(威灵)风扇电机规格书251200600138
产品规格书/ Specification型号/Type:MDT-08B (WLA)电压/ V oltage:220V60Hz物料编码/ Materiel Code:251200600138设计/Designed by:温琳审核/ Checked by:栾春批准/ Approved by:苏少敏广东美的微波炉制造有限公司中国广东省北滘镇美的工业园Beijiao Midea Industrial Park,Shunde,Guangdong,China1. 适用范围/ Scope本规格产品适用于微波炉用风扇电机。
/ This specification covers shaded pole motor assembly for micro-wave oven.2. 型号/Type:MDT-08B (WLA)3.额定值/ Ratings:电压/ Voltage:220V 频率/ Frequency:60Hz极数/ Number of Poles: 2 绝缘等级/ Insulation Class: B工作制/ Time rating: 连续/continuous(S1)4.运行条件/ Operation environment:4.1 海拔高度/ Elevation:不大于1000米/ No more than 1000 m4.2 温度/ Temperature: -10℃~+40℃4.3 相对湿度/ Relative Humidity: 75% R.H5.性能:5.1 电气性能参见表1/ Electrical performance described in Table 1.表1/table 15.2机械性能参见表2/ Mechanical Performance decribed in Table 2表2/t able 26. 环境测试/Environment Test6.1 耐热性/High Temperature Exposure:180℃环境中放置24小时,取出5分钟后测试,介电强度测试应符合表1第8项要求,绝缘电阻大于10MΩ。
Ashford e-Spinner Super Jumbo ESPSJ08082019V2 2 说明
INSTRUCTIONSe-Spinner Super JumboESPSJ08082019V22AssemblyYarn GuideOrifice Reducer Bushes 3. Squeeze and slide the stainless-steel yarn guides onto opposite sides of the flyer arms.NOTE: when spinning at higher RPM it may be necessary tosqueeze and rotate whichever yarn guide isn’t being used to achieve perfect balance.4. Apply a drop of oil to the flyer spindle and slide the bobbin on.1. Locate the two Orifice Reducer Bushes into the holes in top of the base.2. Locate the threading hook into the tapered hole in the front. This will only be required when using the Orifice Reducer Bushes.35. Locate the drive band onto the MIDDLE groove in the bobbinControls4Changing the bobbin- Turn the motor off using the ON/OFF switch or foot switch.- Remove the drive band from the motor pulley.- Slide the bobbin off the flyer spindle.- Apply a drop of oil to the spindle and fit anotherbobbin. Locate the drive band onto the MIDDLE groove in the bobbin whorl. Do not use the large groove as this will stretch the drive band.- Apply a drop of oil to the front of the flyer shaft. Position it under the leather brake band and into the front and rear flyer bearings.Orifice Reducer Bushes- Use the large Orifice Reducer Bush to reduce the orifice from 27mm (1⅛”) to 15mm (⅝”) for spinning medium yarns.- Use the small Orifice Reducer Bush to reduce the orifice to 9mm (⅜”) for spinning fine yarns.- Orifice Reducer Bushes help prevent the yarn vibrating. By drafting the yarn at about a 45-degree angle to the orifice the vibration will almost be eliminated.- When not in use store the bushes in the holes in top of the base.- Apply Vaseline to the o-ring to make them easier to Because the e-Spinner Super Jumbo is bobbin lead the yarn needs to be strong enough to turn the flyer. Thus, it requires very little tension on the leather brake band. At full speed the flyer rotates at approx. 500 RPM.1. Tie a piece of medium to thick wool yarn called a leader, approx. 1.5m (5 feet) long to the bobbin. Thread it through the flyer yarn guides with the black inserts on the left-hand side of the flyer and out through the orifice.SpinningAccessories - Available from your local Ashford Dealer.1. Thread the leader through the flyer yarn guide with the black inserts and out through the orifice. Locate 2 bobbins of spun yarn onto the pins of the optional Lazy Kate and tie the two strands of yarn to the leader.2. Check the SPIN/PLY switch is on PLY (up) and the SPEED control is on SLOW. Switch the ON/OFF switch to ON. Gradually turn the SPEED control clockwise until the flyer starts to turn slowly.PlyingMore InformationThe Wheel MagazineAshford’s annual fibrecraft magazine. Spinning, weaving, felting, dyeing and knitting projects, patterns and articles from around the world. To receive the premium version delivered to you, subscribe at:/subscribeHow-to videos on You TubeWatch our how-to videos on You Tube./user/AshfordHandicraftsFacebookJoin us on facebook./ashford.wheels.looms3. Allow the leader and your spun yarn to start feeding in. Use the least amount of leather brake band tension possible. Kate – do we need to say something about keep the yarn under tension in your hand when plying the two yarns together?For further plying information refer to “The Ashford book of Hand Spinning” by Jo Reeve, a 116-page book full of ideas and inspiration for spinners.12V cigarette cordso you can spin away from home in your car, caravan, RV, boat or using a battery pack.BobbinsAshford Country Spinner2 bobbins.Lazy KateHolds 2 Country Spinner2 bobbins.Padded Carry BagStore your e-Spinner Super Jumbo in the convenient padded carry bag. The power pack, foot switch and oil bottle will fit in the handy pockets.。
信浓步进电机产品目录2011年版
0.9° φ36mm
NEMA16
双极
36C0 36C1
规格
型号 步进角 deg. 0.9 0.9 0.9 0.9 0.9 0.9 0.9 0.9 电压 V 5.0 3.2 2.6 2.0 8.2 5.2 4.1 3.3 电流 A/φ 0.3 0.5 0.6 0.8 0.3 0.5 0.6 0.8 电阻 Ω/φ 16.80 6.40 4.30 2.53 27.20 11.50 6.90 4.10 电感 mH/φ 8.50 3.16 2.23 1.24 20.70 9.00 5.35 3.16 保持力矩 mN-m 41.2 41.2 41.2 41.2 100 100 100 100 转动惯量 g-cm2 7.3 7.3 7.3 7.3 19.6 19.6 19.6 19.6 引线数 Lead 4 4 4 4 4 4 4 4 重量 g 50 50 50 50 90 90 90 90 机身长 mm 12.35 12.35 12.35 12.35 19.7 19.7 19.7 19.7
2200 4950 6000 6000 *1:1520 /*2:1800 850 6500 6500 5330 1000 7700
* * * *
1
□39mm
NEMA16
单极
39C1 40C1 40C2
*
2
*
□56mm
NEMA23
单极
56C1 56C3 56C5
* * * * * *
1.8° □28mm
单极
42H0 42H1 42H2 42H3
力矩 (mN-m)
1500 2000 3000 4000 5000 6000 7000 8000 9000 10000 11000
三星B9120(大器II)_图片_整体测评_参数规格_优缺点大全
三星B9120(大器II)图片_整体测评_参数规格_优缺点大全三星B9120(大器II)整体外观 (3)整体外观第1段 (3)三星B9120(大器II)屏幕 (5)屏幕第1段 (5)三星B9120(大器II)听筒按键 (7)听筒按键第1段 (7)三星B9120(大器II)键盘 (9)键盘第1段 (9)三星B9120(大器II)侧面细节 (12)侧面细节第1段 (12)三星B9120(大器II)电池 (16)电池第1段 (16)三星B9120(大器II)娱乐应用 (17)娱乐应用第1段 (17)三星B9120(大器II)网络应用 (19)网络应用第1段 (19)三星B9120(大器II)主界面 (21)主界面第1段 (21)三星B9120(大器II)综合测试 (24)综合测试第1段 (24)三星B9120(大器II)参数规格 (26)基本参数 (26)基本功能 (27)产品特性 (28)拍照功能 (28)娱乐功能 (28)数据功能 (29)商务功能 (29)手机附件 (29)保修信息 (29)三星B9120(大器II)优点 (31)三星B9120(大器II)缺点 (32)附录:各大手机品牌官方旗舰店简介 (33)三星官方旗舰店 (33)HTC官方旗舰店 (33)诺基亚官方旗舰店 (33)索尼官方旗舰店 (33)摩托罗拉官方旗舰店 (33)索尼爱立信官方旗舰店 (34)LG官方旗舰店 (34)飞利浦官方旗舰店 (34)联想官方旗舰店 (34)海尔官方旗舰店 (34)三星B9120(大器II)整体外观整体外观第1段既然敢把B9120冠以年度顶级商务旗舰,三星自然是在这款手机的外形设计上下了苦工。
B9120机身极尽可能的使用了国内成功人士青睐的金属元素以及金属拉丝工艺,整个机身框架也是选用了凸显沉稳气质的暗色聚碳酸酯材质打造,总之,一切的一切,就是让手机第一眼就给人尊荣、霸气的感觉。
三星B9120后盖依旧是“低调的奢华”,聚碳酸酯材质背壳采用了哑光处理,显得极富质感,而背壳上依稀可见的纹理也是可以让使用者在不经意间展露出不凡的气质。
SONY 数位照相机DSC-W800 W85 W90 说明书
數位照相機 / 数码照相机
使用說明書
CT
使用说明书
CS
DSC-W80/W85/W90
關於進階操作的詳細資訊,請透過電腦存取隨附 CD-ROM 包含 的 “Cyber-shot 手冊”和 “Cyber-shot 進階指南”。 关于高级操作更详细情况,请用电脑打开并参阅附送 CD-ROM 中的 “Cyber-shot 手册”和 “Cyber-shot 进阶指南”。
CT 享受電腦的樂趣 ............................................18
USB 連接和應用軟體 (附件)支援的作業系統 ...................... 18 觀看 “Cyber-shot 手冊”和 “Cyber-shot 進階指南” .............. 19
• 小心不要讓相機弄濕。水份進入相機內可能 會造成故障,這種故障在某些情況下可能無 法修復。
• 請勿使相機朝向太陽或其他強光。否則可能 會造成相機故障。
• 請勿在靠近會產生強烈無線電波或放射輻射 線的場所使用相機。相機可能無法正常記錄 或播放。
• 在多沙或多塵土的地方使用相機,可能會造 成故障。
Philips Xenium 9@9w CT9A9WBLK 商品说明书
9@9wCT9A9WBLKIncredible battery lifeThe best in class Philips Xenium 9@9w ensures you are always connected - thanks to an incredibly long battery life. Your sleek and slim companion features dual SIM for switching of phone numbers, making it truly hassle-free and reliable.Always on, always connectedUp to 1 month of standby timeUp to 8 hours of talk timeMaximize your mobilityDual SIM cards for hassle-free switching of phone numbersMaximize your Multimedia Experience2.0 Megapixel cameraMP3 playback and ringtones for a superior audio experienceVideo capture and playback in MPEG4 and H263 formatMicroSD memory card slot for extra memory/ data storageHighlightsUp to 1 month standby timeThe phone can be on and in standby mode continuously for up to 1 month on a single charge.Up to 8 hours talk timeThe phone can support up to 8 hours conversation on a single charge.2 SIM cards, 1 phoneEnjoy hassle-free switching of your phone numbers without having to remove and swap your SIM cards. Your Philips mobile phone is specially designed to accommodate two SIMcards. To switch between the two cards, simplyselect the desired SIM card on the phonemenu.2.0 Megapixel cameraCapture your most precious memories with theclearest, sharpest picture quality imaginablethrough stunning 2.0 megapixel resolution.Press camera key to take vibrant pictures to usefor wallpaper and fotocall, or to send later viaMMS.MP3 playback and ringtonesUse the data cable or an external memory cardto transfer MP3 music files to your phone for asuperior audio experience on the go. You canalso personalize your ringtone with a selectionfrom your MP3 files.SpecificationsPowerBattery capacity: 920mAh Li-IonBattery saving manager: Auto switch on/offStandby time: Up to 1 month (In GSM900, DRX9)Talk time: Up to 8 hours (In GSM1800, PCL15, DTX OFF)Picture/DisplayMain Display Colors: 262KDiagonal screen size (inch): 1.93 inchMain Display Resolution: 220x176 pixelMain Display Technology: TFTDimensionsAntenna: IntegratedForm Factor: Candy barHandset color: Titan Black, Titan Coco Handset dimensions: (103 x 52 x 12)mm Handset weight: 90g (With battery) / 71g (Without battery)Network FeaturesGSM band: 900, 1800, 1900 MHzVoice Codec: FR/EFR/AMR/HRGPRS (Rx+Tx): Class 10 (4+2), Class B Messaging: Concatenated SMS (Long SMS), E-mail, EMS / release 4, MMS,Multimedia Message Service, SMS CB (Cell Broadcast), SMS (Short Message Service), SMS multi-target Services: OTA provisioning (WAP,MMS), SIM Toolkit / Release 99, WAP 2.0, DRM (combined delivery), DRM (forward lock), DRM (separate delivery)SoundRingers: MP3 ringer, Polyphonic (64 tones) Still Picture CapturingCamera: IntegratedDigital zoom: 8xImage sensor type: CMOSPicture resolution: 176x220, QVGA (320x240), SXGA (1280x1024), UXGA (1600x1200), VGA (640x480)Picture quality: Normal, High, LowPicture file format: JPEGPreview frame rate: 30 frames/secondPicture Mode: Night mode, Self-timer mode,Multi-shotSpecial effects preview mode: Blackboard,Blue effect, Embossed, Green effect, Greyscale, Sepia, Sketch, Whiteboard, Blue carving,Color invert, Contrast, Copper carving, Grayinvert, NormalWhite balance: Automatic, Cloudy, Daylight,Fluorescent, Incandescent, TungstenVideo PlaybackCompression formats: MPEG4, H.263Resolution (pxl): 176x144, 128x160, 128x96,220x176Frame rate (fps): 30Video RecordingCompression formats: H.263, MPEG4Resolution (pxl): 220x176Frame rate: 15 fpsAudio PlaybackAudio supported formats: AMR, Midi, MP3,AAC, AAC+, ADPCM, WAV, AWBAudio CapturingVoice recording: Yes, AMR, AWB, WAVAudio RecordingRecord your own voiceRecording Time: Depends on audio format andmemory available (AMR: Up to memory limit;WAV: Max 50 min; AWB: Max 3.8hrs)Storage MediaMemory Card Types: Micro Secure Digital (SD)Memory management: Memory status,Dynamic memory allocationUser memory: 11 MBMaximum memory card capacity: 2 GBConvenienceButtons and controls: 4-way navigation keyand enter, Side keys, Soft keysCall Management: Call Cost, Call Counters,Call Forwarding, Call on Hold, Call Time, CallWaiting, Caller ID, Conference Call,Emergency Call, Explicit Call Transfer,Microphone mute, Missed Calls, Multi-partycall, Received CallsEase of Navigation: Animated Color MatrixEase of Use: Hands free mode, Hot Keys,Keypad Lock, Softkeys, Vibra Alert, In-flightmodeGames and applications: Agenda, AlarmClock, Calculator, Calendar, Java MIDP 2.0,International converter, Lunar Calendar,StopwatchLanguage available: UI: Chinese Simplified,Chinese Traditional, English, Indonesian,Thai, Vietnamese, French, Romanian,Russian, Turkish, UkrainianPersonal Info Management: Daylight saving,Time Zone, Smart Phonebook, Internationalclock, Task listConnectivityHeadset: Via mini USB connectorModem Capabilities: CSD (Voice, Data), GPRSWireless connections: BluetoothPC Link: USB 1.1Bluetooth profiles: A2DP, Handsfree,Headset, Object push profileAccessoriesStandard Package Includes: Battery, CD ROM(Mobile Phone Tools), Charger, StereoHeadset, User Manual, USB data cable,HandsetGreen SpecificationsPackaging material: CartonPackaging type: GiftboxLead-free soldered product* Specification indicated based on initial full batterycharge tested in laboratories with Bluetooth switchedoff. Actual performance is dependent on networkservice provider and usage.© 2019 Koninklijke Philips N.V.All Rights reserved.Specifications are subject to change without notice. Trademarks are the property of Koninklijke Philips N.V. or their respective owners.Issue date 2019‑10‑23 Version: 2.0.112 NC: 8670 000 36502 EAN: 87 12581 39096 9。
XW09B 9键高性能电容式触摸芯片
9通道自校正电容式触摸感应芯片规格书1.概述XW09B是9键的电容式触摸感应芯片,AO(模拟电压)模式输出。
芯片采用SOP16环保封装。
1.1应用◆用于电视机、音响、显示器、玩具等家电和娱乐设备与工业控制设备1.2特点●极高的灵敏度,可穿透13mm的玻璃,感应到手指的触摸●超强的抗干扰和ESD能力,不加任何器件即可通过人体8000v试验●外围电路简单,最少只需一个4.7n电容,芯片即可正常工作●外围寄生电容自动校正●多通道公用灵敏度电容●工作电压范围:2.5~5.5V●SOP16封装1.3封装芯片引脚图1.4管脚定义1.5典型应用1. C1是内部平衡电容,取值范围是 1nf~10nf 。
建议使用 4.7nf 。
2. CSEL 是灵敏度设置电容,电容值越小灵敏度越高,不接电容时灵敏度最高,电容值最大100pF ,电容的选取根据应用的环境,接触感应盘的大小折中考虑。
Touch PAD Touch PAD Touch PAD Touch PAD Touch PAD2.绝对最大值3.电气参数特性(无特殊说明,Ta=25℃,VDD=5V)4.功能描述4.1初始化芯片上电复位后,只需约400mS就可以计算出环境参数和自动校正按键走线长度,按键检测功能开始工作。
4.2自动校正功能芯片内置自动校正功能,芯片能够根据外部环境的变化,自动调整电容的大小,检测到按键时停止自动校正,进入按键判决过程,从检测到按键开始,经过大约30~60 秒,芯片重新进入自动校正状态,意味着检测按键有效的时间为30~60 秒,按键时间超过这个时间,感应电容计入外部环境电容。
4.3模拟电压输出芯片集成模拟电压输出电路,使用模拟电压输出时,使用单键有效输出。
当多按键同时按下时AO口按从PAD0到PAD8依次降低的优先级,只响应最高级别的按键。
按键和电压的对应关系如表所示:4.4 蜂鸣器驱动电路芯片内部集成蜂鸣器驱动电路,输出50ms固定开关频率的方波,可以直接驱动蜂鸣器,省去外部方波信号产生电路和蜂鸣器驱动电路,降低系统的应用成本,简化系统设计,根据系统需要可以外接驱动电路加大驱动能力,适应更大功率的蜂鸣器。
创佳彩电产品介绍按功能
创佳彩电产品介绍按产品功能介绍USB电影播放功能:创佳电视32HME5000 X12创佳电视42LWE6300 F1创佳电视19HDE3000 V6创佳电视32HME8000 R35创佳电视22HZE9000 C68创佳电视32HZE9000 C68创佳电视19HZE9000 C68创佳电视26HZE9000 C68创佳电视32LME7000 T25创佳电视43HPD6000 K91创佳电视40HZE9000 C68创佳电视46HZE9000 C68创佳电视32LME8800 E6创佳电视51HPD6000 K91创佳电视22HDE3000 V655HZE9000 C6839HWE6300 F1创佳电视32HDE3000 V6创佳电视40LME8800 E6互联网电视功能:创佳电视32HME5000 X12创佳电视32LME8800 E6创佳电视40LME8800 E6电视/显示屏两用功能:创佳电视32HME5000 X12创佳电视19HDE3000 V6创佳电视22HZE9000 C68创佳电视32HZE9000 C68创佳电视32LME7000 T25创佳电视40HZE9000 C68创佳电视46HZE9000 C68创佳电视32LME8800 E6创佳电视22HDE3000 V6创佳电视 55HZE9000 C68创佳电视32HDE3000 V6创佳电视40LME8800 E6超窄边电视功能:创佳电视42LWE6300 F1创佳电视32HME8000 R35创佳电视32LME7000 T25创佳电视39HWE6300 F1内容总结。
90kw 8级电机尺寸参数
90kw 8级电机尺寸参数# 90kw 8级电机尺寸参数电机是现代工业中广泛使用的一种电气设备,90kw 8级电机是一种具有一定功率和级数的电机。
本文将介绍90kw 8级电机的尺寸参数。
## 1. 外部尺寸90kw 8级电机的外部尺寸是指电机整体的尺寸,包括长度、宽度和高度等方面的参数。
这些尺寸参数可以帮助我们确定电机适用于何种应用场景。
实际的外部尺寸参数会根据具体的电机型号而有所不同。
## 2. 铁芯参数铁芯是电机中的一个重要部件,其尺寸参数对电机的性能有着重要影响。
以下是铁芯的一些相关尺寸参数:- 磁路长度:铁芯磁路的总长度,在电机设计中通常需最小化以减小磁阻。
- 铁芯高度:铁芯的高度,也即铁芯磁路的上下边界的距离。
- 铁芯宽度:铁芯的宽度,也即铁芯磁路的左右边界的距离。
## 3. 绕组参数绕组是将电流导体线圈绕制在电机的铁芯上,用于产生电磁力使电机转动。
以下是绕组的一些相关尺寸参数:- 转子绕组长度:转子绕组的长度,也即转子上绕制线圈的总长度。
- 定子绕组长度:定子绕组的长度,也即定子上绕制线圈的总长度。
## 4. 磁极参数磁极是电机中产生磁场的部件,其尺寸参数对电机的性能和效率有一定影响。
以下是磁极的一些相关尺寸参数:- 磁极长度:磁极的长度,也即磁极在电机中的纵向距离。
- 磁极宽度:磁极的宽度,也即磁极在电机中的横向距离。
## 5. 冷却系统参数电机在工作过程中会产生较多热量,为了保证电机的正常运行,需要考虑冷却系统的设计。
以下是冷却系统的一些相关尺寸参数:- 冷却剂流量:冷却剂在冷却系统中的流量大小。
- 散热面积:冷却系统中散热器的面积,影响冷却效果。
## 6. 性能参数除了尺寸参数外,电机的性能参数也是设计中需要考虑的重要因素。
以下是一些与性能相关的参数:- 额定功率:电机设计中规定的最大输出功率。
- 额定电压和电流:电机设计中规定的额定工作电压和电流。
- 效率:电机的能量转换效率。
90kw 8级电机尺寸参数
8级电机是一种比较常用的电机等级,其功率为90kW。
在选择8级电机时,除了考虑功率外,还需要考虑其尺寸参数。
尺寸参数是指电机在装配和安装过程中所需的物理尺寸,包括外形尺寸、安装尺寸和连接尺寸。
下面是关于8级电机尺寸参
数的相关参考内容:
1.外形尺寸:外形尺寸主要指电机的外部尺寸,包括长度、宽度和高
度。
对于8级电机来说,常见的外形尺寸参数为450mm x 300mm x 350mm (长 x 宽 x 高)。
2.安装尺寸:安装尺寸是指电机安装的空间要求,包括安装底脚的尺
寸和安装孔的位置和尺寸。
8级电机通常使用标准的IEC安装尺寸,如IMB5(V1),IMV1(V3)等安装方式。
3.连接尺寸:连接尺寸是指电机与其他设备连接的尺寸要求,包括轴
承尺寸、连接轴的尺寸和连接法兰的尺寸等。
8级电机的连接尺寸通常遵循国际标准,如ISO、DIN等。
4.散热尺寸: 8级电机在工作时会产生一定的热量,散热尺寸是指电
机散热器的尺寸要求,包括散热器的面积和安装方式等。
散热尺寸的设计需要考虑电机的额定功率、使用环境和散热条件等因素。
以上是关于8级电机尺寸参数的一些常见参考内容。
在选择和设计电机时,除了尺寸参数外,还需要考虑其它技术参数(如额定电压、额定电流、额定转速等)和特殊的工作环境要求。
综合考虑以上因素,可以选择适合的8级电机,以满足实际需求。
8090cpu参数
8090cpu参数8090 CPU是一款性能强大的中央处理器,本文将从架构、性能、功耗和适用领域等方面介绍8090 CPU的参数。
一、架构8090 CPU采用了先进的多核架构,具备高效的并行计算能力。
它拥有多个物理核心和超线程技术,可以同时处理多个线程,提高系统的并发性能。
此外,8090 CPU还采用了先进的缓存技术,提高数据访问速度,进一步提升系统的整体性能。
二、性能8090 CPU具备出色的性能表现。
它采用了先进的制程工艺,拥有更高的主频和更大的缓存容量。
这使得8090 CPU在运行大型应用程序、处理复杂计算任务时能够更加高效地完成工作。
同时,8090 CPU还通过优化指令集和提升浮点运算性能等手段,进一步提升了系统的整体性能。
三、功耗8090 CPU在性能提升的同时,也注重功耗控制。
它采用了节能设计,通过降低工作电压、优化电源管理等方式降低功耗。
这不仅有助于延长电池续航时间,还能减少系统发热,提高设备的稳定性和可靠性。
四、适用领域8090 CPU适用于各种领域的计算设备。
在个人电脑领域,8090 CPU可以提供强大的运算能力,满足用户对于高性能的需求,适用于游戏、图形处理、视频编辑等应用。
在服务器领域,8090 CPU 的多核架构和高并发性能可以支持大规模的数据处理和服务器应用。
此外,8090 CPU还可以应用于人工智能、云计算、边缘计算等领域,为各种计算任务提供高效的处理能力。
8090 CPU作为一款性能强大的中央处理器,具备先进的架构、出色的性能、较低的功耗和广泛的适用领域。
它不仅可以满足个人用户对于高性能计算的需求,还能支持各种专业领域的应用。
未来,8090 CPU有望进一步推动计算技术的发展,为各行各业带来更多的创新和可能性。
sa901b遥控芯片资料
sa901b遥控芯片资料(最新版)目录1.SA901B 遥控芯片概述2.SA901B 遥控芯片的特点3.SA901B 遥控芯片的技术参数4.SA901B 遥控芯片的应用领域5.SA901B 遥控芯片的发展前景正文一、SA901B 遥控芯片概述SA901B 遥控芯片是一款具有高性能、低功耗特性的射频遥控芯片。
该芯片广泛应用于各种遥控器、智能家居、安防监控等领域,为用户提供便捷的遥控操作体验。
二、SA901B 遥控芯片的特点1.高性能:SA901B 遥控芯片具备较高的信号处理能力,可实现快速、准确的遥控指令解码,保证设备的稳定运行。
2.低功耗:在保证性能的前提下,SA901B 遥控芯片具有较低的功耗,延长了设备的使用寿命,降低了设备的能耗。
3.抗干扰能力强:SA901B 遥控芯片具备较强的抗干扰能力,能在复杂的电磁环境中保持稳定的遥控通信。
4.小巧便携:SA901B 遥控芯片尺寸较小,便于集成到各种遥控设备中,满足不同应用场景的需求。
三、SA901B 遥控芯片的技术参数1.工作频率:SA901B 遥控芯片支持多种工作频率,如 315MHz、433MHz等,满足不同应用场景的需求。
2.编码方式:SA901B 遥控芯片支持多种编码方式,如 AM、FM、FSK 等,可根据用户需求进行选择。
3.输出功率:SA901B 遥控芯片支持可调的输出功率,用户可根据实际应用场景进行调整。
4.工作电压:SA901B 遥控芯片的工作电压范围较广,一般为1.8V-3.6V,适用于多种电池类型。
四、SA901B 遥控芯片的应用领域1.家电遥控:SA901B 遥控芯片可用于电视、空调、洗衣机等家电设备的遥控器中,为用户提供便捷的遥控操作体验。
2.智能家居:SA901B 遥控芯片可用于智能门锁、智能照明等智能家居设备的遥控器中,实现远程遥控控制。
3.安防监控:SA901B 遥控芯片可用于摄像头、无人机等安防监控设备的遥控器中,实现实时遥控监控。
洗衣机新品培训材料XX
脱水效果非常好,较少晾晒时间
2功能,帮您合理安排洗衣时 间和练一时间,更可避开用电高峰期, 节能环保
让您轻松工作、快乐生活,实用于分时 段计算电费的地区,让您节省更多
阿波罗·薄控系列特别增设强力分水喷 嘴,并采用光滑材质及特殊结构设计, 有效防止水中钙质及污垢沉积,避免洗 衣二次污染
洗衣机新品培训材料XX
海信薄控洗衣机系列卖点
四、 506mm超大内筒直径,全球首创
薄控采用全球首创的胀筒技术,配合无缝等离 子焊接,成就了行业内的第一大内桶( 506mm),洗涤中的摔打高度提升了20%, 不但保证了超大的洗涤容量,洗净力也大幅提 升。与此同时,内筒直径的提升,衣物在脱水 过程中的离心力自然增大,提升衣物脱水效果 !随着离心力的增大,海信的1000转的洗衣 机相当于1200转的脱水效果,1200转的洗衣 机相当于1400转的脱水效果,避免了因洗衣 机脱水转速过高,而对衣物造成的伤害。
十七、360°智能感控,自动感知,全程调节
海信360°智能感控洗护系统,以人的感官呵护您的衣物:因衣物对水温的不 同需求,他知冷暖;因衣物质地而异的洗涤强度,它懂轻重;因衣物重量而 异的洗涤时间,它有分寸。更将防止二次污染设计和健康洗涤程序融入360° 智能感控洗护系统中,带给衣物由内而外真正的清洁,呵护家人健康。
洗衣机新品培训材料XX
海信薄控洗衣机系列卖点
十二、超大口径,去放自如
330mm超大直径取物口设计,方便取放大宗衣物,即使大件的夏被也能装得 下、洗得净,舒适操作,轻松取衣。
洗衣机新品培训材料XX
海信薄控洗衣机系列卖点
十三、45°人体工学设计,告别弯腰操作
薄控将人性化设计做到了极致,45°角筒门开启,从人体工程学角度实现最佳 操作方式。15°黄金倾角控制面板,以自然站姿,掌控尽收眼底。定位结构设 计按键,精准控制,省时省力。
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1/9July 2001STW8NB90STH8NB90FIN-CHANNEL 900V - 1.1 Ω - 8 A TO-247/ISOWATT218PowerMesh™ MOSFETs TYPICAL R DS (on) = 1.1 Ωs EXTREMELY HIGH dv/dt CAPABILITY s 100% AVALANCHE TESTEDs VERY LOW INTRINSIC CAPACITANCES sGATE CHARGE MINIMIZEDDESCRIPTIONUsing the latest high voltage MESH OVERLAY ™process, STMicroelectronics has designed an ad-vanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprieraty edge termi-nation structure, gives the lowest R DS(on) per area,exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteris-tics.APPLICATIONSs HIGH CURRENT, HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS)s DC-AC CONVERTERS FOR WELDING EQUIPMENT ABSOLUTE MAXIMUM RATINGS(•)Pulse width limited by safe operating area(1)I SD ≤8 A, di/dt ≤200A/µs, VDD ≤ V (BR)DSS , T j ≤ T JMAX.TYPE V DSS R DS(on)I D STW8NB90900 V < 1.45 Ω8 A STH8NB90FI900 V< 1.45 Ω5 ASymbol ParameterValueUnit STW8NB90STH8NB90FIV DS Drain-source Voltage (V GS = 0)900V V DGR Drain-gate Voltage (R GS = 20 k Ω)900V V GS Gate- source Voltage±30V I D Drain Current (continuos) at T C = 25°C 85A I D Drain Current (continuos) at T C = 100°C 53A I DM (q )Drain Current (pulsed)3220A P TOT Total Dissipation at T C = 25°C 20080W Derating Factor1.60.64W/°C dv/dt (1)Peak Diode Recovery voltage slope 4V/ns V ISO Insulation Withstand Voltage (DC)-2500V T stg Storage Temperature–65 to 150°C T jMax. Operating Junction Temperature150°CSTW8NB90 - STH8NB90FI2/9THERMAL DATAAVALANCHE CHARACTERISTICSELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFON (1)DYNAMICTO-247ISOWATT218Rthj-case Thermal Resistance Junction-case Max 0.6251.56°C/W Rthj-ambThermal Resistance Junction-ambient Max30°C/W T lMaximum Lead Temperature For Soldering Purpose300°CSymbol ParameterMax ValueUnit I AR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max)8A E ASSingle Pulse Avalanche Energy(starting T j = 25 °C, I D = I AR , V DD = 50 V)700mJSymbol ParameterTest ConditionsMin.Typ.Max.Unit V (BR)DSS Drain-sourceBreakdown Voltage I D = 250 µA, V GS = 0900V I DSS Zero Gate VoltageDrain Current (V GS = 0)V DS = Max Rating1µA V DS = Max Rating, T C = 125 °C 50µA I GSSGate-body Leakage Current (V DS = 0)V GS = ±30V±100nASymbol ParameterTest ConditionsMin.Typ.Max.Unit V GS(th)Gate Threshold Voltage V DS = V GS , I D = 250 µA 345V R DS(on)Static Drain-source On ResistanceV GS = 10 V, I D = 4 A1.11.45ΩSymbol ParameterTest ConditionsMin.Typ.Max.Unit g fs (1)Forward Transconductance V DS > I D(on) x R DS(on)max, I D =4 A8S C iss Input Capacitance V DS = 25V, f = 1 MHz, V GS = 02120pF C oss Output Capacitance 225pF C rssReverse Transfer Capacitance23pF3/9STW8NB90 - STH8NB90FIELECTRICAL CHARACTERISTICS (CONTINUED)SWITCHING ONSWITCHING OFFSOURCE DRAIN DIODENote: 1.Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.2.Pulse width limited by safe operating area.Symbol ParameterTest ConditionsMin.Typ.Max.Unit t d(on)Turn-on Delay Time V DD = 450 V, I D = 3.5 A R G =4.7Ω V GS = 10 V (see test circuit, Figure 3)25ns t r Rise Time 12ns Q g Total Gate Charge V DD = 400V, I D = 9A,V GS = 10V4672nC Q gs Gate-Source Charge 12.5nC Q gdGate-Drain Charge18nCSymbol ParameterTest ConditionsMin.Typ.Max.Unit t r(Voff)Off-voltage Rise TimeV DD = 720V, I D = 7.4 A, R G =4.7Ω, V GS = 10V (see test circuit, Figure 5)22ns t f Fall Time 15ns t cCross-over Time31nsSymbol ParameterTest ConditionsMin.Typ.Max.Unit I SD Source-drain Current 8A I SDM (2)Source-drain Current (pulsed)32A V SD (1)Forward On Voltage I SD = 8 A, V GS = 01.6V t rr Reverse Recovery Time I SD = 7.4 A, di/dt = 100A/µs, V DD = 100V, T j = 150°C (see test circuit, Figure 5)700ns Q rr Reverse Recovery Charge 6.3µC I RRMReverse Recovery Current18ASTW8NB90 - STH8NB90FI4/9Output Characteristics5/9STW8NB90 - STH8NB90FISTW8NB90 - STH8NB90FI6/9Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery TimesFig. 4: Gate Charge test CircuitFig. 2: Unclamped Inductive WaveformFig. 1:Unclamped Inductive Load Test CircuitFig. 3: Switching Times Test Circuit ForResistive LoadSTW8NB90 - STH8NB90FI7/9STW8NB90 - STH8NB90FI8/9STW8NB90 - STH8NB90FIInformation furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequencesof use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics productsare not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.The ST logo is a trademark of STMicroelectronics© 2000 STMicroelectronics – Printed in Italy – All Rights ReservedSTMicroelectronics GROUP OF COMPANIESAustralia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco -Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.9/9。