NFA v1.0

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钢号对照

1.7362
DIN17175
X10Cr13 X20Cr13 X8Cr17 X5CrNi189 X5CrNi189 X10CrNiTi189
1.4006 1.4021 1.4016 1.4301 1.4301 1.4541
DIN17440 DIN17440 DIN17440 DIN17440 DIN17440 DIN17440
不锈耐酸钢管
X2CrNi189 X2CrNi810
1.4306 1.4404
DIN17440 DIN17440
日本 JIS S09CK S9CK S10C S15C S20C S25C
法国 NF
德国 DIN C10 C10 C10,CK10 C15,CK15 C22,CK22 CK25
XC10 XC10 XC12 XC18
A333-1.6 A334-1.6 A333-7.9、A334-7.9 A333-3.4 A334-3.4 A333-8、A334-8 A335-P1、A369-FP1 A250-T1、A209-T1 A335-P2、A369-FP2、A213-T2 A335-P12、A369-FP12 A213-T12 A335-P11、A369-FP12 A199-T11、A213-T11 A335-P22、A369-FP22 A199-T22、A213-T22 A335-P5、A389-FP5 A213-T5 A335-P9、A369-FP9 A199-T9、A213-T9 A268 TP410 (SISI 420) A268 TP430/TP429 A312、A376、TP304 A213、A249、A268、TP304 A312、A376 TP321 A213、A249、A266、TP321 A312、A376 TP316 A213、A249、A266、TP316 A312、A376 TP316 A213、A249、A268、TP317 A312、A376 TP34L A213、A249、A268、TP304L A312、A376 TP316L A213、A249、A268、TP316L A312、A376、 TP317L A213、A249、A268、TP317L 英国 BS 040A04 045M10 040A10 045M10 095M15 050A20

晶体穿墙接收器说明书

FeaturesFor surface mounted application Easy pick and placeMetal to silicon rectifier, majority carrier conduction Low power loss, high efficiency High current capability, low VF High surge current capabilityPlastic material used carriers Underwriters Laboratory Classification 94V-0 Epitaxial constructionHigh temperature soldering:260o C / 10 seconds at terminalsMechanical DataCase: JEDEC SMA/DO-214AC Molded plastic Terminals: Pure tin plated, lead free Polarity: Indicated by cathode band Packaging: 12mm tapeWeight: 0.064 gramMaximum Ratings and Electrical CharacteristicsRating at 25o C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.For capacitive load, derate current by 20%Type NumberSymbol SS 12 SS 13 SS 14 SS 15 SS 16 SS 19 SS 110 SS 120 Units Maximum Recurrent Peak Reverse Voltage V RRM 20 30 405060 90 100VMaximum RMS VoltageV RMS 14 21 283542 63 70150 V Maximum DC Blocking VoltageV DC 20 30 405060 90 100VMaximum Average Forward Rectified Current at T L (See Fig. 1)I (AV) 1.0A Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method )I FSM 30AMaximum Instantaneous Forward Voltage(Note 1) IF= 1.0A @ 25oC@ 100oCV F 0.50.40.75 0.650.800.700.90 0.85V 0.40.1 Maximum DC Reverse Current @ T A =25 oC atRated DC Blocking Voltage @ T A =125 oC I R 105.0 2.0mAmA Maximum DC Reverse Current at VR=33V& T A =50 oCHT IR -5.0uA Typical Junction Capacitance (Note 3) Cj50pFTypical Thermal Resistance ( Note 2 )R ΘJL R θJA 28 88 oC/WOperating Temperature Range T J -65 to +125 -65 to +150o C Storage Temperature Range T STG -65 to +150 oCNotes: 1.Pulse Test with PW=300 usec, 1% Duty Cycle2.Measured on P.C.Board with 0.2” x 0.2” (5.0mm x 5.0mm) Copper Pad Areas.3.Measured at 1 MHz and Applied Reverse Voltage of4.0V D.C.200200SMA/DO-214AC0.181(4.60)0.161(4.10)0.209(5.30)0.193(4.90)0.063(1.60)0.051(1.30)Dimensions in inches and(millimeters)SS 115 150105 150RATINGS AND CHARACTERISTIC CURVES (SS12THRU SS120)FIG.2-MAXIMUM NON-REPETITIVE FORWARDP E A K F O R W A R D S U R G E C U R R E N T .(A )30NUMBER OF CYCLES AT 60HzFIG.1-MAXIMUM FORWARD CURRENT DERATINGCURVEA V E R A G E F O R W A R D C U R R E N T .(A )0LEAD TEMPERATURE.(C)FIG.3-TYPICAL FORWARD CHARACTERISTICSI N S T A N T A N E O U S F O R W A R D C U R R E N T .(A ).2.4.6.81.01.21.41.61FORWARD VOLTAGE.(V)FIG.4-TYPICAL REVERSE CHARACTERISTICSI N S T A N T A N E O U S R E V E R S E C U R R E N T .(m A )1PERCENT OF RATED PEAK REVERSE VOLTAGE.(%)FIG.5-TYPICAL JUNCTION CAPACITANCEJ U N C T I O N C A P A C I T A N C E .(p F )REVERSE VOLTAGE.(V)FIG.6-TYPICAL TRANSIENT THERMALCHARACTERISTICST R A N S I E N T T H E R M A L I M P E D A N C E .(C /W )10.010.1101001001010.1T,PULSE DURATION.(sec)PACKAGE SPQ/PCS CARTON SPQ/PCS CARTON SIZE/CM CARTON GW/KG CARTON NW/KG SMA5000/REEL8000036X30.6X3112.0011.00。

纳米纤维素基多层级孔道结构碳气凝胶的制备及在锂电池中的应用

纳米纤维素基多层级孔道结构碳气凝胶的制备及在锂电池中的应用孔雪琳;卢芸;叶贵超;李道浩;孙瑾;杨东江;殷亚方【摘要】采用纳米精磨法对商品桉木浆进行纳米纤丝化处理,得到了高长径比、尺寸均一的纳米纤丝化纤维素(NFC),平均直径为230.10 nm,长度达数十微米.将其组装、干燥后制得具有大量介孔的纳米纤丝化纤维素气凝胶(NFCA).将NFCA在氮气氛围下高温碳化制得碳气凝胶(CNFA),或在氢氧化钾条件下辅助碳化制得具有多层级孔道结构的碳气凝胶(CNFA-A),在保留的碳气凝胶骨架结构上进行孔洞构建.通过扫描电子显微镜(SEM)、透射电子显微镜(TEM)表征及Nanomeasure?统计分析,发现NFC的平均直径经碳化后减小到53.16 nm.利用X射线衍射(XRD)、BET 比表面积测试和拉曼光谱揭示了碳化处理对纳米纤维素结构、比表面积、石墨化程度和缺陷的影响.结果表明,KOH辅助碳化处理后的碳气凝胶不仅保留了纤维素气凝胶前驱体的网络结构,还在其骨架上二次构建了更多的微孔和介孔,其比表面积高达488.92 m2/g,总孔容为0.404 cm3/g,所得的碳骨架被部分石墨化,具有良好的导电性.这类源于生物质的高比表面积碳气凝胶在被用作锂离子电池(LIB)负极材料时表现出优异的电化学性能,在电流密度1 A/g下连续充放电1000次后比容量达到409 mA·h/g,在电流密度高达20 A/g下,比容量还能维持在219 mA·h/g.%The nanofibrillated cellulose ( NFC ) with large aspect ratio and uniform size ( mean diameter is 230. 10 nm) was fabricated from commercial eucalyptus pulps by scale-up nano-grinding. Then the NFC was assembled to NFC aerogels(NFCA) with three-dimensional(3D) frameworks. After carbonization of NFCA under N2 atmosphere, the carbon nanofiber aerogels( CNFA) were generated with the inherited 3D network structure.With futher KOH-assisted annealing of CNFA, the hierarchical porous carbon aerogels( denoted as CNFA-A) were finally obtained. CNFA-A combined the inherited original 3D network from NFCA and the secondary constructed micropore-mesopore structure. The mean diameter of CNFA-A was diminished to 53. 16 nm. The structures of three kinds of cellulose-based aerogels were characterized by scanning electron microsco-py(SEM) and transmission electron microscopy ( TEM), and the statistic diameter of nanofibril building-blocks was obtained by Nanomeasure ?. The graphitization degree of cellulose-based aerogels was investigated by X-ray diffraction( XRD) and Raman spectroscopy, and the specific surface area was measured through BET specific surface area test. The specific surface area of CNFA-A is as high as 488. 92 m2/g and the total pore volume can reach up to 0. 404 cm3/g. In addition, as anode material for lithium ion battery, the CNFA-A exhibits a high reversible capacity ( 448 mA · h/g at 1 A/g ) , an excellent rate capability ( 219 mA · h/g at 20 A/g) and an outstanding cycling performance(409 mA·h/g at 1 A/g after 1000 cycles).【期刊名称】《高等学校化学学报》【年(卷),期】2017(038)011【总页数】6页(P1941-1946)【关键词】纳米纤丝化纤维素;气凝胶;碳化;多层级结构;锂离子电池【作者】孔雪琳;卢芸;叶贵超;李道浩;孙瑾;杨东江;殷亚方【作者单位】青岛大学材料科学与工程学院,青岛266071;中国林业科学研究院木材工业研究所,北京100091;中国林业科学研究院木材工业研究所,北京100091;青岛大学材料科学与工程学院,青岛266071;青岛大学材料科学与工程学院,青岛266071;青岛大学环境科学与工程学院,青岛266071;青岛大学环境科学与工程学院,青岛266071;中国林业科学研究院木材工业研究所,北京100091【正文语种】中文【中图分类】O613.71;O636.1纤维素是一种由β-(1→4)糖苷键连接脱水-D-葡萄糖单元构成的高分子, 广泛存在于植物中, 是植物细胞壁最主要的成分之一, 是地球上最丰富的天然高聚物. 如今, 人们已经从细胞壁中成功制备了环境友好的纳米纤丝化纤维素(NFC)[1,2]. 通过精细盘磨、高频超声[3,4]、高压均质等简单的机械处理, 可以用较低的成本制备出尺寸均一的NFC. 通过一定的组装手段, 可将NFC构建成具有三维网络结构的纳米纤丝化纤维素气凝胶(NFCA). 这类仅含C, H, O的绿色新型气凝胶是新型碳材料的理想前驱体[5], 可以通过热解直接成为碳气凝胶. 最重要的是, 高温碳化后的碳气凝胶不仅保持了NFCA的三维网状结构, 还具有良好的机械性、疏水性和导电性等新功能, 可将NFCA原本局限在亲水或极性介质中的应用拓展到新能源储存与转化等领域[6].碳气凝胶是最具有前景的高性能材料之一, 是一种密度可调的轻质多孔碳材料, 具有多孔道网状结构, 其孔隙率可以高达80%～99%, 具有网络连续、电导率高、比表面积大及密度变化范围大等特点. 传统的碳气凝胶通常是由有机气凝胶(如间苯二酚-甲醛气凝胶、间苯二酚-甲醛(RF)气凝胶、三聚氰胺-甲醛气凝胶)经高温碳化后制得[7～10]. 这类有机气凝胶存在易碎、密度相对较高、孔隙率低、原料或生产过程毒性较高等缺陷. 相比之下, NFC作为碳气凝胶前驱体具有来源广泛、产量巨大、制备绿色、可再生、机械性能优异、可生物降解、生物相容性好[11,12]和改性位点多等显著优点, 是一种极具开发潜力的碳气凝胶前驱体[13], 有利于推动探索环境友好、成本低廉的碳气凝胶的大规模生产.碳材料在能源储存与转化等领域具有广泛应用, 但传统的碳材料理论容量和能量密度低、活性位点少, 限制了其在锂电池、超级电容器以及电催化方面的应用. 在追求提高碳材料的电化学性能而不降低其稳定性和功率密度的解决方案中, 具有特殊纳米结构的新型碳材料是人们探索的主要热点[14]. 目前, 对碳基纳米材料的研究还大多集中在化学还原和分离的石墨烯、碳纳米管(CNF)和炭黑等导电性好、比表面积高的碳材料上. 碳纳米管、碳纳米纤维、空心碳纳米球, 石墨烯等不同纳米结构的碳材料已被证明可增强锂离子电池(LIB)的性能[15～18]. 然而, 制备技术复杂、前驱体成本高、石油基原料不可再生等因素严重限制了纳米碳的工业化生产. 本研究中, 我们将由纳米精磨桉木浆制备的一维NFC可控组装成具有贯通孔道结构和三维网络结构的气凝胶, 在高温碳化后保留了其三维网络骨架结构, 并进行了二次孔道构建. 这种方法得到的碳气凝胶具有可控的多层级孔道结构和比表面积高、孔隙率高、机械性能优异、导电性良好等特点, 其连贯的三维网络结构上还具有大量的微孔, 是典型的微孔-介孔-大孔气凝胶. 这样的多孔道结构有助于缩短Li离子的插入-脱嵌过程的扩散路径, 为Li离子的传输提供更多的路径[19]. 较高的比表面积可以加快电子传导且能够束缚更多的Li离子, 有极高的稳定性; 同时其连贯的网络结构保证了电子/离子的定向传输途径和应力变化的强耐性, 作为阳极材料具有优异的物理性能和电化学性能. 由该碳气凝胶组装的LIB显示出优异的循环性能和良好的倍率性能, 为低成本锂电池的研究提供了新的思路.1.1 试剂与仪器桉木浆(Eucalyptus pulps)由中国林业科学研究院林产化学研究所提供; 氢氧化钾、N-甲基吡咯烷酮和六氟磷酸锂(分析纯)购自国药集团化学试剂品有限公司; 乙炔黑(分析纯)购自长沙电池厂; 聚偏氟乙烯(PVDF, 分析纯)购自武汉荟谱化学新材料有限公司; 透析袋(直径76 mm)购自美国Sigma-Aldrich公司; 氮气(纯度99.999%)购自北京市亚南气体科技有限公司; 实验用水均为去离子水.NoVaTMNano SEM 250型场发射扫描电子显微镜和FEI Tecnai G20型透射电子显微镜(美国FEI公司); Magna-IR 750型傅里叶变换红外光谱仪(美国Nicolet 公司); HR800型拉曼光谱仪(法国Horiba Jobin Yvon Lab RAM公司); NOVA 1200e比表面积分析仪(美国康塔仪器公司); CT2001A型电池测试系统(武汉蓝电电子有限公司); MKSS1-1012-B079型超级净化手套箱(德国米开罗那有限公司).1.2 实验过程1.2.1 机械法制备NFC 先将桉木浆分散在去离子水中, 形成固含量为2.5%(质量分数)的分散液. 采用盘磨机进行初步纳米纤丝化, 盘磨机的转速设定为2000 r/min, 磨盘间距设定为-20 μm. 分散液经盘磨后重新倒入物料槽, 如此往复3次在磨盘间进行纳米纤丝化, 将盘磨后的湿态纤维素分散在去离子水中, 得到浓度为1.0%(质量分数)的水分散液.1.2.2 纳米纤丝化纤维素气凝胶及碳气凝胶的制备将制得的纤维素上清液装入透析袋中, 然后放入叔丁醇中置换24 h, 并用磁力搅拌器进行机械搅拌, 剩余悬浮液体积约为原体积的1/3, 收集剩余的悬浮液装入瓶中后在超低温冰箱(-80 ℃)中冷冻, 然后转入冷冻干燥仪中干燥72 h(-55 ℃, 10 Pa)得到干燥的NFCA. 将NFCA放入管式炉中, 在空气中由室温加热至250 ℃(升温速率为2 ℃/min), 保温2 h后在氮气氛围下继续升温至800 ℃(升温速率为5 ℃/min), 保温1 h, 即得到相应的碳纳米纤丝化纤维素气凝胶(CNFA). 此外, 将CNFA在管式炉中用氢氧化钾进行辅助碳化, 控制氮气的流速为80 mL/min, 得到孔道结构二次构建的气凝胶CNFA-A.1.2.3 电化学测试将样品、乙炔黑和聚偏氟乙烯按照质量比为8∶1∶1的比例溶解在N-甲基-2-吡咯烷酮中, 研磨形成膏状. 然后将悬浮液均匀地涂抹在Cu箔基底上, 放入真空烘箱中, 在120 ℃下干燥10 h制成电极片. 电解液为1 mol/L六氟磷酸锂(LiPF6)的碳酸亚乙酯(EC)/碳酸二甲酯(DMC)/碳酸二乙酯(DEC)(质量比为1∶1∶1)溶液. 在手套箱中组装成CR2016型纽扣电池. 在LAND CT2001A电池测试系统上进行充放电性能测试, 限制电压为0.01～3.0 V.2.1 纳米纤丝化纤维素的结构表征通过XRD和FTIR对按木浆原料和NFC进行晶体结构与化学结构的表征. 由图1(A)可见, 桉木浆和NFC均呈现典型的天然纤维素Iβ型结构, 在14.3°, 16.8°和22.5°出现了和(002)晶面的衍射峰. 可见纳米纤丝化处理并没有改变纤维素的晶型. 图1(B)中桉木浆和NFC的FTIR图均在3300～3450 cm-1附近和2910 cm-1附近出现强吸收峰, 归属于分子链上羟基O—H和C—O的伸缩振动; 1636 cm-1处的明显吸收峰来自于CO伸缩振动. 此外, 桉木浆和NFC在1430和1030 cm-1处均出现较明显的纤维素Iβ特征峰[20], 说明纳米精磨机械处理不会改变纤维素的化学结构.2.2 碳化处理与孔结构二次构建对气凝胶骨架结构的影响图2分别为NFCA、 CNFA及CNFA-A的SEM照片和相应的直径分布统计图(对200个纤维直径进行数值测量统计). 由图2(A)和(D)可见, NFCA的形貌均匀细长, 表面光滑, 平均直径为230.10 nm. 碳化后的CNFA直径大幅度减小, 平均直径为90.92 nm[图2(B), (E)]. 这是因为高温碳化过程中发生了脱氢脱氧, 其结构发生了重组[21]. 碳化孔道构建后的CNFA-A的纳米纤丝相互交错成网状结构, 较二次构建前的直径进一步减小[图2(C)及其插图], 统计分析显示其平均直径仅为53.16 nm[图2(F)].2.3 纤维素气凝胶的孔径分布与结构表征为进一步观察处理过程中气凝胶孔结构的变化, 采用N2吸附-脱附来分析材料孔道分布的微观结构. 如图3所示, 根据IUPAC气体吸附等温线的分类标准, NFCA,CNFA和CNFA-A的N2吸附-脱附等温线均属于IV型吸附曲线. 其中, 由NFC组装而成的NFCA的比表面积为111.69 m2/g, 总孔容为0.283 cm3/g. 由于纤维网络在热解过程中形成了大量孔隙, 高温热解后的碳纤维气凝胶的比表面积发生了显著提升, 但由于高温热解导致NFCA中部分介孔孔洞坍塌, 碳化后比表面积为423.77 m2/g, 总孔容为0.317 cm3/g. KOH辅助的高温二次构建后的CNFA-A 比表面积高达488.92 m2/g, 总孔容为0.404 cm3/g. 这是因为KOH高温下通过氧化还原反应腐蚀碳气凝胶网络结构, 在K渗入石墨层的过程中生成大量孔结构[22]. 通过非定域密度函数理论(NLDFT)分析[23], 孔结构二次构建后的CNFA-A增加了少量的微孔及部分介孔.通过Raman测试表征了CNFA及CNFA-A的石墨化程度. 图4(A)中出现了2个明显的峰, 一个是由C—C键的振动形成的D带(1335～1350cm-1), 对应样品的无序部分或有缺陷的石墨结构; 另一个峰是碳原子的sp2电子排布形成的G带(1585～1590 cm-1), 为样品石墨相的特征峰. ID/IG强度比可用于表征样品的石墨化程度[24,25]. CNFA-A的ID/IG值CNFA更高, 且G峰和D峰的半峰宽增加, 揭示了CNFA-A的石墨化程度更低, 无序缺陷结构更多. XRD谱[图4(B)]在2θ=25°处较宽的衍射峰也表明碳化后生成了无定形碳.2.4 纤维素碳气凝胶的锂电性能为了研究样品作为锂离子电池负极材料的电化学性能, 对CNFA-A进行了恒电流充放电测试. 图5(A)是CNFA-A的1～3次充放电循环的恒电流充放电曲线, 电流密度为1 A/g, 电压范围0.01～3.0 V(vs. Li+/Li). 第1次恒电流放电曲线在1.2 V处有1个放电平台, 首次的充、放电比容量分别为994和448 mA·h/g, 库仑效率为45%, 第1次充放电过程中产生不可逆容量的原因是材料表面的电解液与多孔碳气凝胶电极材料反应生成了固体电解质界面膜(SEI). SEI的形成消耗了部分锂离子, 使得首次充放电的不可逆容量增加, 降低了负极材料的库仑效率[26]. 随后的第2次和第3次的充放电循环过程中, 材料的充电比容量分别为437和423 mA·h/g, 变化不大, 说明材料性能稳定.锂离子电池负极材料的使用寿命是很重要的电化学性能指标. 图5(B)示出了材料的比容量和循环稳定性能, 测试在0.01～3.0 V的电位窗口、 1 A/g的电流密度下进行. 结果表明, 循环1000周后, CNFA的比容量为279 mA·h/g, CNFA-A的比容量达到409 mA·h/g, 且二者均具有良好的稳定性, 容量保持率均在80%以上. 由图5(C)可见, CNFA和CNFA-A均具有非常好的倍率性能. 同一电流密度下, 材料的比容量保持稳定; 随着电流密度的增加, 材料的比容量逐渐变小. CNFA-A在2, 5和10 A/g 3个不同电流密度下的比容量分别为416, 323和260 mA·h/g. CNFA在1 A/g电流密度下的比容量为310 mA·h/g, 经过倍率性能循环后, 电池的容量几乎未发生变化. 而CNFA-A在经过倍率循环后, 比容量同样未发生变化, 但倍率性能稍有衰减. 在电流密度为20 A/g时, CNFA-A电池的平均容量约为219 mA·h/g, 说明这种碳材料具备大电流快速充放电的潜力, 这得益于材料较大的比表面积及本身多层级的孔洞结构有利于增加与电解液的接触面积. 而微孔结构较多的热解碳材料会形成更加稳定的SEI膜[27], 从而避免了溶剂分子对电极材料的破坏, 因而此气凝胶作为电极材料具有优异的循环稳定性能.通过采用纳米精磨法对按木浆进行纤丝化处理, 制备出直径均一、高长径比的NFC(平均直径为230.10 nm). 将NFC组装成具有3D网络结构的气凝胶后进行高温碳化处理, 并在保留的碳气凝胶骨架结构上进行了孔道二次构建, 得到具有多层级孔道结构的高比表面积碳气凝胶. 其内部网络纤维的平均直径为53.16 nm, 比表面积高达488.92 m2/g. 该新型碳材料在被用作锂离子电池负极材料时表面出较高的容量、良好的循环稳定性及理想的倍率性能. 在电流密度为1 A/g下连续充放电1000次后比容量达到409 mA·h/g, 在电流密度高达20 A/g下比容量还能维持在219 mA·h/g.† Supported by the National Natural Science Foundation of China(No. 31500468) and the Fundamental Research Funds for the Central Non-profit Research Institution of CAF(No. CAFYBB2016QB012).【相关文献】[1] Arioli T., Peng L., Betzner A. S., Sci., 1998, 279(5351), 717—720[2] Zhu H., Luo W., Ciesielski P. N., Fang Z., Zhu J. Y., Henriksson G., Himmel M. E., Chem. Rev., 2016, 116(16), 9305—9374[3] Zhao H. P., Feng X. Q., Gao H., Appl. Phys. Lett., 2007, 90(7), 073112[4] Li C. X., Liang X. R., Gu J., Chem. J. Chinese Universities, 2017, 38(7), 1286—1294(李彩新, 梁小容, 古菊. 高等学校化学学报, 2017, 38(7), 1286—1294)[5] Hao H. Y., Wang Q., Shao Z. Q., Yang R. J., Chem. J. Chinese Universities, 2015, 36(9), 1838—1845(郝红英, 王茜, 邵自强, 杨荣杰. 高等学校化学学报, 2015, 36(9), 1838—1845)[6] Chen L. F., Huang Z. H., Liang H. W., Gao H. L., Yu S. H., Adv. Funct. Mater., 2014,24(32), 5104—5111[7] Lin N., Dufresne A., Eur. Polym. J., 2014, 59, 302—325[8] Kobayashi Y., Saito T., Isogai A., Angew. Chem. Int. Ed., 2014, 53(39), 10394—10397[9] Haghoo M., Yousefi A. A., Mehr M. J. Z., Microporous Mesoporous Mater., 2014, 184, 97—104[10] Kwon S. H., Lee E., Kim B. S., Curr. Appl. Phy., 2014, 14(4), 603—607[11] Pinkert A., Marsh K. N., Pang S., Chem. Rev., 2009, 109(12), 6712—6728[12] Zhang S. H., He Y. F., Fu R. F., Gu Y. C., Chen S., Chem. J. Chinese Universities, 2017, 38(6), 1090—1098(张思航, 何永锋, 付润芳, 顾迎春, 陈胜. 高等学校化学学报, 2017, 38(6), 1090—1098)[13] Lu Y., Liu H., Gao R., Xiao S., Zhang M., Yin Y., Wang S., Li J., Yang D., ACS Appl. Mater. Interfaces, 2016, 8(42), 29179—29185[14] Ma N., Jia Y. A., Yang X., J. Mater. Chem. A, 2016, 4(17), 6376—6384[15] Wei L., Sevilla M., Fuertes A. B., Mokaya R., Yushin G., Adv. Funct. Mater., 2012, 22(4), 827—834[16] Dutta S., Bhaumik A., Energy Environ. Sci., 2014, 7(11), 3574—3592[17] Ye G. C., Zhu X. Y., Chen S., Yang D. J., J. Mater. Chem. A, 2017, 5(18), 8247—8254[18] Liu Y. C., Zhang N., Jiao L. F., Chen J., Adv. Mater., 2015, 27(42), 6702—6707[19] Li W., Yang Z., Li M., Nano Lett., 2016, 16(3), 1546—1553[20] Tang K., White R. J., Mu X., Titirici M. M., Maier J., Chem. Sus. Chem., 2012, 5(2), 400—403[21] Hu X., Hu K., Zeng L., Carbohydr. Polym., 2010, 82(1), 62—68[22] Wang B., Qiu J. H., Feng H. X., Sakai E., Komiyama T., Electrochimica Acta, 2016, 190, 229—239[23] Ojeda M. L., Esparza J. M., Campero A., Phys. Chem. Chem. Phys., 2003, 5(9), 1859—1866[24] Zhang B., Qin X., Li G. R., Gao X. P., Energy Environ. Sci., 2010, 3(10), 1531—1537[25] Wu Z. S., Ren W., Xu L., Li F., Cheng H. M., ACS Nano, 2011, 5(7), 5463—5471[26] Zhang K. L., Li X. N., Liang J., Zhu Y. C., Hu L., Cheng Q. S., Guo C., Lin N., Qian Y. T., Electrochimica Acta, 2015, 155, 174—182[27] Kong F., Kostecki R., Nadeau G., J. Power Sources, 2001, 97, 58—66。

循环伏安法与线性伏安法

循环伏安法原理：循环伏安法（CV）是最重要的电分析化学研究方法之一。

该方法使用的仪器简单，操作方便，图谱解析直观，在电化学、无机化学、有机化学、生物化学等许多研究领域被广泛应用。

循环伏安法通常采用三电极系统，一支工作电极（被研究物质起反应的电极），一支参比电极（监测工作电极的电势），一支辅助（对）电极。

外加电压加在工作电极与辅助电极之间，反应电流通过工作电极与辅助电极。

对可逆电极过程（电荷交换速度很快），如一定条件下的Fe(CN)63-/4-氧化还原体系，当电压负向扫描时，Fe(CN)63－在电极上还原，反应为：Fe(CN)63－＋e-→Fe(CN)64－得到一个还原电流峰。

当电压正向扫描时，Fe(CN)64－在电极上氧化，反应为：Fe(CN)64－－e-→Fe(CN)63－得到一个氧化电流峰。

所以，电压完成一次循环扫描后，将记录出一个如图2所示的氧化还原曲线。

扫描电压呈等腰三角形。

如果前半部扫描(电压上升部分)为去极图1 cv图中电势~时间关系图2 氧化还原cv曲线图化剂在电极上被还原的阴极过程，则后半部扫描(电压下降部分)为还原产物重新被氧化的阳极过程。

因此．一次三角波扫描完成一个还原过程和氧化过程的循环，故称为循环伏安法。

应用领域：循环伏安法能迅速提供电活性物质电极反应的可逆性，化学反应历程，电活性物质的吸附等许多信息。

循环伏安法可用于研究化合物电极过程的机理、双电层、吸附现象和电极反应动力学．成为最有用的电化学方法之一。

如通过对未知研究体系的CV研究，可以获研究对象的反应电位或和平衡电位, 估算反应物种的量，以及判断反应的可逆性。

电化学反应中物种反应的量可以依据Faraday定律估算，, 其中m为反应的摩尔量, n为电极反应中的得失电子数，F为图3 Ag在Pt电极上电结晶过程的CV图0.01mol/LagNO3+0.1mol/LKNO3Faraday常数（96485 C.molmnFidtQt==∫0-1）。

AT24C16A

1Features•Write Protect Pin for Hardware Data Protection –Utilizes Different Array Protection Compared to the AT24C02/04/08/16•Low-voltage and Standard-voltage Operation –2.7 (V CC = 2.7V to 5.5V)–1.8 (V CC = 1.8V to 5.5V)•Internally Organized 256 x 8 (2K), 512 x 8 (4K), 1024 x 8 (8K) or 2048 x 8 (16K)•2-wire Serial Interface•Schmitt Trigger, Filtered Inputs for Noise Suppression •Bi-directional Data Transfer Protocol•100 kHz (1.8V) and 400 kHz (2.5V, 2.7V , 5V) Clock Rate•8-byte Page (2K), 16-byte Page (4K, 8K, 16K) Write Modes •Partial Page Writes are Allowed •Self-timed Write Cycle (5 ms Max)•High Reliability–Endurance: One Million Write Cycles –Data Retention: 100 Years•Automotive Grade, Extended Temperature and Lead-Free/Halogen-Free Devices Available•8-lead PDIP , 8-lead JEDEC SOIC, 8-lead MAP and 8-lead TSSOP PackagesDescriptionThe AT24C02A/04A/08A/16A provides 2048/4096/8192/16384 bits of serial electri-cally erasable and programmable read only memory (EEPROM) organized as 256/512/1024/2048 words of 8 bits each. The device is optimized for use in many industrial and commercial applications where low power and low voltage operation are essential. The AT24C02A/04A/08A/16A is available in space saving 8-lead PDIP ,8-lead JEDEC SOIC, 8-lead MAP and 8-lead TSSOP packages and is accessed via a 2-wire serial interface. In addition, the entire family is available in 2.7V (2.7V to 5.5V)and 1.8V (1.8V to 5.5V) versions.Pin Configurations8-lead MAPBottom View2AT24C02A/04A/08A/16A0976L–SEEPR–1/04Block DiagramPin DescriptionSERIAL CLOCK (SCL): The SCL input is used to positive edge clock data into each EEPROM device and negative edge clock data out of each device.SERIAL DATA (SDA): The SDA pin is bidirectional for serial data transfer. This pin is open-drain driven and may be wire-ORed with any number of other open-drain or open collector devices.DEVICE/PAGE ADDRESSES (A2, A1, A0): The A2, A1 and A0 pins are device address inputs that must be hard wired for the AT24C02A. As many as eight 2K devices may be addressed on a single bus system (device addressing is discussed in detail under the Device Addressing section).The AT24C04A uses the A2 and A1 inputs for hard wire addressing and a total of four 4K devices may be addressed on a single bus system. The A0 pin is a no-connect.Absolute Maximum Ratings**NOTICE:Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent dam-age to the device. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.3AT24C02A/04A/08A/16A0976L–SEEPR–1/04The AT24C08A only uses the A2 input for hardwire addressing and a total of two 8K devices may be addressed on a single bus system. The A0 and A1 pins are no-connects.The AT24C16A does not use the device address pins, which limits the number of devices on a single bus to one. The A0, A1 and A2 pins are no-connects.WRITE PROTECT (WP): The AT24C02A/04A/08A/16A have a Write Protect pin that provides hardware data protection. The Write Protect pin allows normal read/write oper-ations when connected to ground (GND). When the Write Protect pin is connected to V CC , the write protection feature is enabled and operates as shown in the following table.Memory OrganizationAT24C02A, 2K SERIAL EEPROM: Internally organized with 32 pages of 8 bytes each,the 2K requires an 8-bit data word address for random word addressing.AT24C04A, 4K SERIAL EEPROM: The 4K is internally organized with 32 pages of 16bytes each. Random word addressing requires a 9-bit data word address.AT24C08A, 8K SERIAL EEPROM: The 8K is internally organized with 64 pages of 16bytes each. Random word addressing requires a 10-bit data word address.AT24C16A, 16K SERIAL EEPROM: The 16K is internally organized with 128 pages of 16 bytes each. Random word addressing requires an 11-bit data word address.Pin CapacitanceApplicable over recommended operating range from T = 25°C, f = 1.0 MHz, V = +1.8V.4AT24C02A/04A/08A/16A0976L–SEEPR–1/04Note:1.V IL min and V IH max are reference only and are not tested.DC CharacteristicsApplicable over recommended operating range from: T AI = -40°C to +85°C, V CC = +1.8V to +5.5V, T AE = -40°C to +125°C,V= +1.8V to +5.5V (unless otherwise noted).5AT24C02A/04A/08A/16A0976L–SEEPR–1/04Notes:1.The AT24C02A/04A/08A bearing the process letter “D” on the package (the mark is located in the lower right corner on thetopside of the package), guarantees 400 kHz (2.5V , 2.7V).2.This parameter is characterized and is not 100% tested (T A = 25°C).3.This parameter is characterized and is not 100% tested.AC CharacteristicsApplicable over recommended operating range from T AI = -40°C to +85°C, T AE = -40°C to +125°C, V CC = +1.8V to +5.5V,CL = 1 TTL Gate and6AT24C02A/04A/08A/16A0976L–SEEPR–1/04Device OperationCLOCK and DATA TRANSITIONS: The SDA pin is normally pulled high with an exter-nal device. Data on the SDA pin may change only during SCL low time periods (refer to Data Validity timing diagram). Data changes during SCL high periods will indicate a start or stop condition as defined below.START CONDITION: A high-to-low transition of SDA with SCL high is a start condition which must precede any other command (refer to Start and Stop Definition timing diagram).STOP CONDITION: A low-to-high transition of SDA with SCL high is a stop condition.After a read sequence, the stop command will place the EEPROM in a standby power mode (refer to Start and Stop Definition timing diagram).ACKNOWLEDGE: All addresses and data words are serially transmitted to and from the EEPROM in 8 bit words . The EEPROM sends a zero to acknowledge that it has received each word. This happens during the ninth clock cycle.STANDBY MODE: The AT24C02A/04A/08A/16A features a low power standby mode which is enabled: (a) upon power-up and (b) after the receipt of the STOP bit and the completion of any internal operations.MEMORY RESET: After an interruption in protocol, power loss or system reset, any 2-wire part can be reset by following these steps: (a) Clock up to 9 cycles, (b) look for SDA high in each cycle while SCL is high and then (c) create a start condition as SDA is high.7AT24C02A/04A/08A/16A0976L–SEEPR–1/04Bus Timing (SCL: Serial Clock, SDA: Serial Data I/O)Write Cycle Timing (SCL: Serial Clock, SDA: Serial Data I/O)Note:1.The write cycle time t WR is the time from a valid stop condition of a write sequence to the end of the intervalclear/write cycle.8AT24C02A/04A/08A/16A0976L–SEEPR–1/04Data ValidityStart and Stop DefinitionOutput Acknowledge9AT24C02A/04A/08A/16A0976L–SEEPR–1/04Device AddressingThe 2K, 4K and 8K EEPROM devices all require an 8 bit device address word following a start condition to enable the chip for a read or write operation (refer to Figure 1).The device address word consists of a mandatory one, zero sequence for the first four most significant bits as shown. This is common to all the EEPROM devices.The next 3 bits are the A2, A1 and A0 device address bits for the 2K EEPROM. These 3bits must compare to their corresponding hard-wired input pins.The 4K EEPROM only uses the A2 and A1 device address bits with the third bit being a memory page address bit. The two device address bits must compare to their corre-sponding hard-wired input pins. The A0 pin is no-connect.The 8K EEPROM only uses the A2 device address bit with the next 2 bits being for memory page addressing. The A2 bit must compare to its corresponding hard-wired input pin. The A1 and A0 pins are no-connect.The 16K EEPROM does not use the device address pins, which limits the number of devices on a single bus to one. The A0, A1 and A2 pins are no-connects.The eighth bit of the device address is the read/write operation select bit. A read opera-tion is initiated if this bit is high and a write operation is initiated if this bit is low.Upon a compare of the device address, the EEPROM will output a zero. If a compare is not made, the chip will return to a standby state.Write OperationsBYTE WRITE: A write operation requires an 8 bit data word address following the device address word and acknowledgement. Upon receipt of this address, the EEPROM will again respond with a zero and then clock in the first 8 bit data word. Following receipt of the 8 bit data word, the EEPROM will output a zero and the addressing device, such as a microcontroller, must terminate the write sequence with a stop condi-tion. At this time the EEPROM enters an internally-timed write cycle, t WR , to the nonvolatile memory. All inputs are disabled during this write cycle and the EEPROM will not respond until the write is complete (refer to Figure 2).PAGE WRITE: The 2K EEPROM is capable of an 8-byte page write, and the 4K, 8K and 16K devices are capable of 16-byte page writes.A page write is initiated the same as a byte write, but the microcontroller does not send a stop condition after the first data word is clocked in. Instead, after the EEPROM acknowledges receipt of the first data word, the microcontroller can transmit up to seven (2K) or fifteen (4K, 8K, 16K) more data words. The EEPROM will respond with a zero after each data word received. The microcontroller must terminate the page write sequence with a stop condition (refer to Figure 3).The data word address lower three (2K) or four (4K, 8K, 16K) bits are internally incre-mented following the receipt of each data word. The higher data word address bits are not incremented, retaining the memory page row location. When the word address,internally generated, reaches the page boundary, the following byte is placed at the beginning of the same page. If more than eight (2K) or sixteen (4K, 8K, 16K) data words are transmitted to the EEPROM, the data word address will “roll over” and previous data will be overwritten.ACKNOWLEDGE POLLING: Once the internally-timed write cycle has started and the EEPROM inputs are disabled, acknowledge polling can be initiated. This involves send-ing a start condition followed by the device address word. The read/write bit is representative of the operation desired. Only if the internal write cycle has completed will the EEPROM respond with a zero allowing the read or write sequence to continue.10AT24C02A/04A/08A/16A0976L–SEEPR–1/04Read OperationsRead operations are initiated the same way as write operations with the exception that the read/write select bit in the device address word is set to one. There are three read operations: current address read, random address read and sequential read.CURRENT ADDRESS READ: The internal data word address counter maintains the last address accessed during the last read or write operation, incremented by one. This address stays valid between operations as long as the chip power is maintained. The address “roll over” during read is from the last byte of the last memory page to the first byte of the first page. The address “roll over” during write is from the last byte of the cur-rent page to the first byte of the same page.Once the device address with the read/write select bit set to one is clocked in and acknowledged by the EEPROM, the current address data word is serially clocked out.The microcontroller does not respond with an input zero but does generate a following stop condition (refer to Figure 4).RANDOM READ: A random read requires a “dummy” byte write sequence to load in the data word address. Once the device address word and data word address are clocked in and acknowledged by the EEPROM, the microcontroller must generate another start condition. The microcontroller now initiates a current address read by sending a device address with the read/write select bit high. The EEPROM acknowledges the device address and serially clocks out the data word. The microcontroller does not respond with a zero but does generate a following stop condition (refer to Figure 5).SEQUENTIAL READ: Sequential reads are initiated by either a current address read or a random address read. After the microcontroller receives a data word, it responds with an acknowledge. As long as the EEPROM receives an acknowledge, it will continue to increment the data word address and serially clock out sequential data words. When the memory address limit is reached, the data word address will “roll over” and the sequen-tial read will continue. The sequential read operation is terminated when the microcontroller does not respond with a zero but does generate a following stop condi-tion (refer to Figure 6).Figure 1. Device AddressAT24C02A/04A/08A/16A Figure 2. Byte WriteFigure 3. Page WriteFigure 4. Current Address ReadFigure 5. Random ReadFigure 6. Sequential ReadAT24C02A/04A/08A/16A AT24C02A Ordering InformationNote:For 2.7V devices used in the 4.5V to 5.5V range, please refer to performance values in the AC and DC characteristics table.AT24C04A Ordering InformationNote:For 2.7V devices used in the 4.5V to 5.5V range, please refer to performance values in the AC and DC characteristics table.AT24C02A/04A/08A/16A AT24C08A Ordering InformationNote:For 2.7V devices used in the 4.5V to 5.5V range, please refer to performance values in the AC and DC characteristics table.AT24C16A Ordering InformationNote:For 2.7V devices used in the 4.5V to 5.5V range, please refer to performance values in the AC and DC characteristics table.AT24C02A/04A/08A/16A Packaging Information8P3 – PDIP8S1 – JEDEC SOICAT24C02A/04A/08A/16A 8A2 – TSSOP8Y1 – MAP0976L–SEEPR–1/04xMDisclaimer: Atmel Corporation makes no warranty for the use of its products, other than those expressly contained in the Company’s standard warranty which is detailed in Atmel’s Terms and Conditions located on the Company’s web site. The Company assumes no responsibility for any errors which may appear in this document, reserves the right to change devices or specifications detailed herein at any time without notice, and does not make any commitment to update the information contained herein. No licenses to patents or other intellectual property of Atmel are granted by the Company in connection with the sale of Atmel products, expressly or by implication. Atmel’s products are not authorized for use as critical components in life support devices or systems.Atmel CorporationAtmel Operations2325 Orchard Parkway San Jose, CA 95131, USA Tel: 1(408) 441-0311Fax: 1(408) 487-2600Regional HeadquartersEuropeAtmel SarlRoute des Arsenaux 41Case Postale 80CH-1705 Fribourg SwitzerlandTel: (41) 26-426-5555Fax: (41) 26-426-5500AsiaRoom 1219Chinachem Golden Plaza 77 Mody Road Tsimshatsui East Kowloon Hong KongTel: (852) 2721-9778Fax: (852) 2722-1369Japan9F, Tonetsu Shinkawa Bldg.1-24-8 ShinkawaChuo-ku, Tokyo 104-0033JapanTel: (81) 3-3523-3551Fax: (81) 3-3523-7581Memory2325 Orchard Parkway San Jose, CA 95131, USA Tel: 1(408) 441-0311Fax: 1(408) 436-4314Microcontrollers2325 Orchard Parkway San Jose, CA 95131, USA Tel: 1(408) 441-0311Fax: 1(408) 436-4314La Chantrerie BP 7060244306 Nantes Cedex 3, France Tel: (33) 2-40-18-18-18Fax: (33) 2-40-18-19-60ASIC/ASSP/Smart CardsZone Industrielle13106 Rousset Cedex, France Tel: (33) 4-42-53-60-00Fax: (33) 4-42-53-60-011150 East Cheyenne Mtn. Blvd.Colorado Springs, CO 80906, USA Tel: 1(719) 576-3300Fax: 1(719) 540-1759Scottish Enterprise Technology Park Maxwell BuildingEast Kilbride G75 0QR, Scotland Tel: (44) 1355-803-000Fax: (44) 1355-242-743RF/AutomotiveTheresienstrasse 2Postfach 353574025 Heilbronn, Germany Tel: (49) 71-31-67-0Fax: (49) 71-31-67-23401150 East Cheyenne Mtn. Blvd.Colorado Springs, CO 80906, USA Tel: 1(719) 576-3300Fax: 1(719) 540-1759Biometrics/Imaging/Hi-Rel MPU/High Speed Converters/RF DatacomAvenue de Rochepleine BP 12338521 Saint-Egreve Cedex, France Tel: (33) 4-76-58-30-00Fax: (33) 4-76-58-34-80Literature Requests/literature© Atmel Corporation 2004. All rights reserved. Atmel ® and combinations thereof, are the registered trademarks of Atmel Corporation or its subsidiaries. Other terms and product names may be the trademarks of others.This datasheet has been download from: Datasheets for electronics components.。

AD698中文资料

Universal LVDT Signal Conditioner AD698
FUNCTIONAL BLOCK DIAGRAM
AMP OSCILLATOR VOLTAGE REFERENCE
AD698
B A B FILTER A
AMP
PRODUCT DESCRIPTION
PRODUCT HIGHLIGHTS
REV. B
Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. © Analog Devices, Inc., 1995 One Technology Way, P.O. Box 9106, Norwood. MA 02062-9106, U.S.A. Tel: 617/329-4700 Fax: 617/326-8703
1. The AD698 offers a single chip solution to LVDT signal conditioning problems. All active circuits are on the monolithic chip with only passive components required to complete the conversion from mechanical position to dc voltage. 2. The AD698 can be used with many different types of position sensors. The circuit is optimized for use with any LVDT, including half-bridge and series opposed, (4 wire) configurations. The AD698 accommodates a wide range of input and output voltages and frequencies. 3. The 20 Hz to 20 kHz excitation frequency is determined by a single external capacitor. The AD698 provides up to 24 volts rms to differentially drive the LVDT primary, and the AD698 meets its specifications with input levels as low as 100 millivolts rms. 4. Changes in oscillator amplitude with temperature will not affect overall circuit performance. The AD698 computes the ratio of the secondary voltage to the primary voltage to determine position and direction. No adjustments are required. 5. Multiple LVDTs can be driven by a single AD698 either in series or parallel as long as power dissipation limits are not exceeded. The excitation output is thermally protected. 6. The AD698 may be used as a loop integrator in the design of simple electromechanical servo loops. 7. The sum of the transducer secondary voltages do not need to be constant.

电化学阶跃技术原理以及应用(下)

ΨMe-S
ΨMe-Me
d0Me
d0S
晶核的生长的模式与基底和 (a) 沉积物之间的 ΨMe-S<< 相互作用力有 ΨMe-Me 关。
(b) ΨMe-S >>ΨMe-Me d0Me =d0S
(c) ΨMe-S >>ΨMe-Me d0Me≠d0S
Three Bauer growth models: a) Volmer-Weber, b) Frank-van der
¾ 所使用的金属电极不会与溶剂或者支持电解质反应而使其分解.
¾ 电极表面均一,由于测定信号是一个集合 ¾ 电极本身不易溶解或者是生成氧化膜. ¾ 能够通过简单的方法进行表面净化.
1
水溶液中的Pt，Hg, C 电极的电位窗口（相对于饱和甘汞电极
而言）
-3 -2 -1
0
1
2
Pt Hg
pH=0
pH=7 pH=14
• 玻璃碳电极具有导电性高、对化学药品的稳定性好、气体无法通过电极、纯度高等特点，其性质与热分解石墨电极大致相似，与铂电极相比具有价格便宜、表面通过研磨可以再生、氢过电位和溶解氧的还原过电位小等特点。已经被应用于各种电化学分析中。
• 石墨电极可以分为两种，一种是浸入石蜡的多孔性石墨电极；另外一种是用热分解制作的致密性石墨电极。
位
(2) 产生过电位，例如水的氢过电
位，
（3）电极反应电位（溶解电位）
（4）支持电解质的反应电位
（5）外部混合化合物的反应电位（水溶解氧气）
电位阶跃实验
在电位阶跃的实验中，必须了解仪器和实验的限制
1、恒电位仪器的限制
在很短的时间内，有很高的电流数值，但是实际的最大电流可能取决于恒电位仪器的电流和电压输出特性

几个基本电化学测试方法实验

4
4.1
实验内容
循环伏安法：从初始电位开始使 WE 相对于 RE 的电位环扫变化，记录 WE 和 CE 之间电
流的方法。一般地，初始电位选择为能维持体系初始平衡状态的电位，原因
是仪器并不记录施加初始电位后一段平衡（静置）时间内的电流，若施加的初始电位打破了初始平衡，显然没有理由不去记录平衡扰动后电化学体系的响应，除非有意为之。故很多循环伏安实验从开路电位起扫。
4.1.1
取 1 个电阻 R 1 ，万用表量出电阻值，如右接入两电极系统，-0.5~0.5 V间电位环扫（400 和 100mV/s），两扫速应得两直线，由欧姆定律计算电阻，看看电阻是否与扫速有关，是否等于万用表测得值。（仪器初略校准实验）串接 2 个电阻R 1 和R 2 ，万用表分别量出电阻值，如右接入三电极系统，-0.5~0.5 V间电位环扫（100mV/s），由E~i直线斜率计算电阻，看看是等于R 1 、R 2 还是R 1 +R 2 ？
2
v
dE d (Q / C ) 1 dQ i dt dt C dt C
式中 v 为电位扫速，Q 为电容器电极极板上累计的电量，C 为电容，E 为电容器两电极间的电位差，t 为时间。所有参数均取国际单位。
4.1.4
0.2 M NaSO 4 水溶液中，接入金工作电极，碳对电极，SCE参比电极，-0.2~0.6 V间电位环扫（400、200 和 100mV/s），按 4.1.3 节测算双电层电容C WE ，此时的等效电路（忽略未补偿电阻）如下：
CRsVc ( s ) Vc ( s ) E / s Vc ( s ) E E s (1 sRC ) RC 1 s( s 1 ) RC
t

新版人教版七年级全册英语单词表(含音标).doc

七年级英语单词表Starter Unit 1good /gud/ adj. 好的morning /'m ? :ni ? / n. 早晨；上午Good morning! 早上好！hi /hai/ interj. ( 用于打招呼 ) 嗨；喂hello /h ? 'l ? u/ interj. 你好；喂afternoon /,a:ft ? 'nu:n/ n. 下午Good afternoon! 下午好！evening /'i:vni ? / n. 晚上；傍晚Good evening! 晚上好！how /hau/ adv. 怎样；如何are /a:/ v. 是you /ju:/ pron. 你；你们How are you 你好吗I /ai/ pron. 我am / ? m/ v. 是fine /fain/ adj. 健康的；美好的thanks / θ ? ? k s/ interj.&n. 感谢；谢谢OK / ? u'kei/ interj.& adv. 好；可以Starter Unit 2what /w? t/ pron.&adj. 什么is /iz/ v. 是this / e is/ pron. 这；这个in /in/ prep. ( 表示使用语言、材料等 ) 用；以English /'i ? gli ? / n. 英语 adj. 英格兰的；英语的in English 用英语map /m? p/ n. 地图cup /k ? p/ n. 杯子ruler /'ru:l ? / n. 尺；直尺pen /pen/ n. 笔；钢笔orange /' ? rind ? / n. 橙子jacket /'d ? ? kit/ n. 夹克衫；短上衣key /ki:/ n. 钥匙v1.0可编辑可修改quilt /kwilt/ n.被子；床罩it/it/ pron.它a/ ? / art. ( 用于单数可数名词前 ) 一( 人、事、物)that / e ? t/ pron. 那；那个 spell/spel/ v. 用字母拼；拼写please /pli:z/ interj. (用于客气地请求或吩咐) 请Starter Unit 3color /'k ? l ? / n. (=colour) 颜色red /red/ adj.& n. 红色（的）yellow /'jel ? u/ adj.& n. 黄色（的）green /gri:n/ adj.& n. 绿色（的）blue /blu:/ adj.& n. 蓝色（的）black /bl ? k/ adj.& n. 黑色（的）white /wait/ adj.& n. 白色（的）purple /'p ? :pl/ adj.& n. 紫色（的）brown /braun/ adj.& n. 棕色（的）；褐色（的）the / e i; e ? / art. 指已提到或易领会到的人或事now /nau/ adv. 现在；目前see /si:/ v. 理解；明白can /k ? n/ modal v. 能；会say /sei/ v. 说；讲my /mai/ pron. 我的Unit 1name /neim/ n. 名字；名称nice /nais/ adj. 令人愉快的；宜人的to /tu:/ 常用于原形动词之前，该动词为不定式meet /mi:t/ v. 遇见；相逢too /tu:/ adv. 也；又；太your /j ? :/ pron. 你的；你们的Ms. /miz/ ( 于女子的姓名前，不指明婚否 ) 女士his /hiz/ pron. 他的and / ? nd/ conj. 和；又；而her /h ? :/ pron, 她的yes /jes/ interj. 是的；可以she / ? i:/ pron. 她he /hi:/ pron. 他no /n ? u/ interj. 不；没有；不是not /n ? t/ adv. 不；没有zero /'zi ? r ? u/ num. 零one /w? n/ num. 一two /tu:/ num. 二three / θri:/ num. 三four /f ? :/ num. 四five /faiv/ num. 五six /siks/ num. 六seven /'sevn/ num. 七eight /eit/ num. 八nine /nain/ num. 九v1.0 可编辑可修改telephone /'telif ? un/ n. 电话；电话机number /'n ? mb? / n. 号码；数字phone /f ? un/ n. 电话；电话机telephone/phone number 电话号码first /f ? :st/ adj. 第一first name 名字last /la:st/ adj. 最后的；末尾的last name 姓friend /frend/ n. 朋友China /'t ? ain ? / 中国middle /'midl/ adj. 中间的；中间school /sku:l/ n. 学校middle school中学；初中Unit 2sister /'sist ? / n. 姐；妹mother /'m ? e ? / n. 母亲；妈妈father /'fa: e ? / n. 父亲；爸爸parent /'pe ? r ? nt/ n. 父（母）亲brother /'br ? e ? / n. 兄；弟grandmother /'gr ? nm? e ? / n. （外）祖母；奶奶 grandfather /'gr ? nfa: e ? / n. ( 外) 祖父；爷爷；grandparent /'gr ? npe? r ? nt/ n. 祖父（母）；family /'f ? m? li/ n. 家；家庭those / e ? uz/ pron. 那些who /hu:/ pron. 谁；什么人oh / ? u/ interj. 哦；啊these / e i:z/ pron.这些they / e ei/ pron. 他（她、它）们well /wel/ interj. 嗯；好吧have /h ? v/ v. 经受；经历Have a good day! (表示祝愿)过得愉快！bye /bai/ interj. (=goodbye) 再见son /s ? n/ n. 儿子cousin /'k ? zn/ n. 堂兄（弟、姐、妹）；表兄grandpa /'gr ? npa:/ n. （外）祖父；爷爷；外公 mom /m? m/, /ma:m/ n. (=mum) 妈妈aunt /a:nt/ n. 姑母；姨母；伯母；婶母；舅母grandma /'gr ? nma:/ n. （外）祖母；奶奶；外婆；dad /d ? d/ n. 爸爸uncle /' ? ? kl/ n. 舅父；叔父；伯父；姑父；舅父daughter /'d ? :t ? / n. 女儿here /hi ? / adv. ( 用以介绍人或物 ) 这就是；在这里photo /'f ? ut ? u/ n. 照片of / ? v, ? v/ prep. 属于( 人或物 ) ；关于 ( 人或物)next /nekst/ adj.&n. 下一个（的）；接下来（的）picture /'pikt ? ? / n. 照片；图画girl /g ? :l/ n. 女孩dog /d ? g/ n. 狗Unit 3pencil /'pensl/ n. 铅笔book /buk/ n. 书eraser /i'reiz ? / n. 橡皮box /b ? ks/ n. 箱；盒pencil box 铅笔盒；文具盒schoolbag /'sku:lb ? g/ n. 书包dictionary /'dik ? ? n? ri/ n.词典；字典his /hiz/ pron. 他的v1.0 可编辑可修改mine /main/ pron. 我的hers /h ? :z/ pron. 她的excuse /ik'skju:z/ v. 原谅；宽恕me /mi:/ pron. (I 的宾格)我excuse me 劳驾；请原谅thank / θ ? ? k/ v. 感谢；谢谢teacher /'ti:t ? ? / n. 老师；教师about 关于What about...( 询问消息或提出建议 .. 怎么样yours /j ? :z/ pron. 你的；你们的for /f ? :/ prep. 为了；给；对thank you for... 为 ...... 而感谢help /help/ v.&n. 帮助；援助welcome /'welk ? m/ adj. 受欢迎的You're welcome. 别客气。

SC7715_SC8815_SC6815_GPIO_SPEC_V1.0.0

GPIO78 GPIO79 GPIO81 GPIO82 GPIO83 GPIO84 GPIO85 GPIO86 GPIO87 GPIO88 GPIO89 GPIO90 GPIO91 GPIO92 GPIO93 GPIO94 GPIO95 GPIO96 GPIO97 GPIO98 GPIO99 GPIO100 GPIO101 GPIO102 GPIO103 GPIO104 GPIO105 GPIO106 GPIO107 GPIO108
SD0_D[0] SD0_D[1] SD0_CLK0 LCD_CSN1 LCD_CSN0 LCD_RSTN LCD_CD LCD_FMARK LCD_WRN LCD_RDN LCD_D[0] LCD_D[1] LCD_D[2] LCD_D[3] LCD_D[4] LCD_D[5] LCD_D[6] LCD_D[7] LCD_D[8] LCD_D[9] LCD_D[10] LCD_D[11] LCD_D[12] LCD_D[13] LCD_D[14] LCD_D[15] LCD_D[16] LCD_D[17] LCD_D[18] LCD_D[19]
L L L H H L H L L L H H L H L L H L L H L L H H H H H H H H
OUTPUT 0 OUTPUT 0 OUTPUT 0 OUTPUT 1 OUTPUT 1 OUTPUT 0 INPUT(WPU) OUTPUT 0 INPUT(WPD) INPUT(WPD) INPUT(WPUS) INPUT(WPUS) OUTPUT 0 INPUT(WPUS) OUTPUT 0 OUTPUT 0 INPUT(WPUS) OUTPUT 0 OUTPUT 0 INPUT(WPUS) OUTPUT 0 INPUT/OUTPUT(WPD) INPUT(WPUS) INPUT(WPU) INPUT(WPU) INPUT(WPU) INPUT(WPU) INPUT(WPU) INPUT(WPU) INPUT(WPUS)

NFA-S2 技术数据表说明书

NFA-S2Rotary actuator fail-safe for adjusting dampersin technical building installations• Air damper size up to approx. 2 m²• Torque motor 10 Nm• Nominal voltage AC 24...240 V / DC 24...125 V• Control Open/close• With 2 integrated auxiliary switchesTechnical dataElectrical data Nominal voltage AC 24...240 V / DC 24...125 VNominal voltage frequency50/60 HzNominal voltage range AC 19.2...264 V / DC 21.6...137.5 VPower consumption in operation 6 WPower consumption in rest position 2.5 WPower consumption for wire sizing9.5 VAAuxiliary switch2x SPDT, 1x 10% / 1x 11...100%Switching capacity auxiliary switch 1 mA...3 A (0.5 A inductive), DC 5 V...AC 250 VConnection supply / control Cable 1 m, 2x 0.75 mm²Connection auxiliary switch Cable 1 m, 6x 0.75 mm²Parallel operation Yes (note the performance data)Functional data Torque motor10 NmTorque fail-safe10 NmDirection of motion motor selectable by mounting L/RDirection of motion fail-safe selectable by mounting L/RManual override by means of hand crank and locking switchAngle of rotation Max. 95°Angle of rotation note adjustable starting at 33% in 2.5% steps (withmechanical end stop)Running time motor75 s / 90°Running time fail-safe<20 s @ -20...50°C / <60 s @ -30°CSound power level, motor45 dB(A)Mechanical interface Universal shaft clamp 10...25.4 mmPosition indication MechanicalService life Min. 60'000 fail-safe positionsSafety data Protection class IEC/EN II, reinforced insulationProtection class UL II, reinforced insulationProtection class auxiliary switch IEC/EN II, reinforced insulationDegree of protection IEC/EN IP54Degree of protection NEMA/UL NEMA 2Enclosure UL Enclosure Type 2EMC CE according to 2014/30/EULow voltage directive CE according to 2014/35/EUCertification IEC/EN IEC/EN 60730-1 and IEC/EN 60730-2-14Safety dataUL ApprovalcULus according to UL60730-1A, UL60730-2-14 and CAN/CSA E60730-1The UL marking on the actuator depends on the production site, the device is UL-compliant in any caseHygiene testAccording to VDI 6022 Part 1 / SWKI VA 104-01, cleanable and disinfectable, low emission Type of actionType 1.AA.B Rated impulse voltage supply / control 4 kV Rated impulse voltage auxiliary switch 2.5 kV Pollution degree 3Ambient humidity Max. 95% RH, non-condensing Ambient temperature -30...50°C [-22...122°F]Storage temperature -40...80°C [-40...176°F]Servicingmaintenance-free WeightWeight 2.2 kg•••••••••Safety notesThis device has been designed for use in stationary heating, ventilation and air-conditioning systems and must not be used outside the specified field of application, especially in aircraft or in any other airborne means of transport.Outdoor application: only possible in case that no (sea) water, snow, ice, insolation or aggressive gases interfere directly with the device and that it is ensured that the ambient conditions remain within the thresholds according to the data sheet at any time.Caution: Power supply voltage!Only authorised specialists may carry out installation. All applicable legal or institutional installation regulations must be complied with during installation.The device may only be opened at the manufacturer's site. It does not contain any parts that can be replaced or repaired by the user.Cables must not be removed from the device.To calculate the torque required, the specifications supplied by the damper manufacturers concerning the cross-section and the design, as well as the installation situation and the ventilation conditions must be observed.The two switches integrated in the actuator are to be operated either on power supply voltage or at safety extra-low voltage. The combination power supply voltage/safety extra-low voltage is not permitted.The device contains electrical and electronic components and must not be disposed of as household refuse. All locally valid regulations and requirements must be observed.Product featuresOperating modeThe actuator is equipped with a universal power supply module that can utilise supply voltages of AC 24...240 V and DC 24...125V.The actuator moves the damper to the operating position at the same time as tensioning the return spring. The damper is turned back to the fail-safe position by spring force when the supply voltage is interrupted.Simple direct mountingSimple direct mounting on the damper shaft with a universal shaft clamp, supplied with an anti-rotation device to prevent the actuator from rotating.Manual overrideBy using the hand crank the damper can be actuated manually and engaged with the locking switch at any position. Unlocking is carried out manually or automatically by applying the operating voltage.Adjustable angle of rotation Adjustable angle of rotation with mechanical end stops.High functional reliability The actuator is overload protected, requires no limit switches and automatically stops whenthe end stop is reached.Flexible signalling The actuator has one auxiliary switch with a fixed setting and one adjustable auxiliary switch.They permit a 10% or 11...100% angle of rotation to be signaled.AccessoriesElectrical accessories Description TypeAuxiliary switch 2x SPDT S2A-FFeedback potentiometer 1 kΩP1000A-F Mechanical accessories Description TypeShaft extension 240 mm ø20 mm for damper shaft ø8...22.7 mm AV8-25End stop indicator IND-AFBShaft clamp reversible, for central mounting, for damper shafts ø12.7 /19.0 / 25.4 mmK7-2Ball joint suitable for damper crank arm KH8 / KH10KG10ABall joint suitable for damper crank arm KH8KG8Damper crank arm Slot width 8.2 mm, clamping range ø10...18 mm KH8Actuator arm, for 3/4" shafts, clamping range ø10...22 mm, Slot width8.2 mmKH-AFBForm fit insert 10x10 mm, Multipack 20 pcs.ZF10-NSA-FForm fit insert 12x12 mm, Multipack 20 pcs.ZF12-NSA-FForm fit insert 15x15 mm, Multipack 20 pcs.ZF15-NSA-FForm fit insert 16x16 mm, Multipack 20 pcs.ZF16-NSA-FMounting kit for linkage operation for flat and side installation ZG-AFBBaseplate extension Z-SFAnti-rotation mechanism 230 mm, Multipack 20 pcs.Z-ARS230LHand crank 63 mm ZKN2-BWire colours:1 = blue2 = brown S1 = violet S2 = redS3 = white S4 = orange S5 = pinkS6 = greyElectrical installationCaution: Power supply voltage!Parallel connection of other actuators possible. Observe the performance data.NFA-S2Wiring diagramsAC 24...240 V / DC 24...125 V, open/closeAuxiliary switchElectrical installationOperating controls and indicatorsAuxiliary switch settingsNote: Perform settings on the actuator only in deenergised state.For the auxiliary switch position settings, carry out points 1 to 7 successively.1Manual overrideTurn the hand crank until the desired switching position is set.2Shaft clampEdge line A displays the desired switching position of the actuator on the scale.3Fasten the locking deviceTurn the locking switch to the …Locked padlock“ symbol.4Auxiliary switchTurn rotary knob until the notch points to the arrow symbol.5Unlock the locking deviceTurn the locking switch to the …Unlocked padlock“ symbol or unlock with the hand crank.6CableConnect continuity tester to S4 + S5 or to S4 + S6.7Manual overrideTurn the hand crank until the desired switching position is set and check whether the continuity tester shows the switching point.NFA-S2DimensionsSpindle lengthMin. 85Min. 15Clamping range。

OMA DM FUMO 1.O 协议

2006/12/22OMA DM FUMO 1.O 协议(OMA-TS-DM-FUMO-V1_0-20060615-C)一.简介本规范描述基于OMA-DM的移动设备的固件升级相关的管理对象信息和管理对象的处理行为。

同时被说明的还有同"Exec"命令和Generic Alerts相关的行为。

它解决的是移动设备的交互固件升级方案的缺陷。

本规范为客户端和服务器端提供了一套接口来支持固件升级，这个方案由升级包下载、固件安装和状态（升级成功或失败）汇报三部分组成。

本规范为移动操作员、服务提供商、基础架构厂商、设备制造商和软件提供商来开发和部署交互式固件升级方案提供依据。

目标观众：提供固件升级方案和升级包下载方案的工程师。

二.固件升级管理对象(FUMO)固件升级管理对象的基本结构如下：x---|-----PkgName？〈--- Name of Update Package|-----PkgVersion？〈--- Version of Update Package|-----Download? 〈--- Node used by Exec to initiate download|---PkgURL 〈--- Reference to target for Update Package|-----Update? 〈--- Node used by Exec to initiate Update|---PkgData 〈--- Reference to target for Update Package|-----DownloadAndUpdate？〈------ Node used by Exec to initiate| Download and Update|---PkgURL 〈--- URL Location to get Update Package|-----State 〈--- Current State of the device|-----Ext？〈--- Hook for Vendor Specific Extensions2.1固件升级管理对象参数下面描述的是固件升级管理对象的节点。

02章电催化过程

通过施加一定的电势（或电流）于催化电极上, 然后观测电流（或电势）随时间的变化, 直到电流（或电势）不随时间而变化(或随时间的变化很小)时, 记录下电势—电流的关系曲线。
甲醇的H2SO4溶液在三种不同催化剂电极上的线性扫描曲线（25oC)
实例
电催化活性和稳定性最实用的方法
㈤光谱电化学法: －－运用光谱技术（例如现场的红外光谱）检测催化反应发生时产物或活性中间体初始形成的电势、或毒化物种消失的电势等－－判别在所研究的催化剂上电极反应发生的电势。
(二)非氧化—还原电催化: 催化剂本身在催化过程中并不发生氧化—还原反应.
M
S
A
B
A → B + ne
M
蛋白质和酶的催化反应, 了解,10min
二、影响电催化性能的因素
电催化剂的性能具备的特点: 催化剂有一定的电子导电性。高的催化活性。催化剂的电化学稳定性
影响电催化活性的因素
㈢计时电流法: 评价催化剂活性和稳定性的一种重要方法
H2SO4溶液中甲醇在3种催化剂上的计时电流曲线(25℃,电势: 0. 7V)
实例
I0
催化剂
（%/s)
c
0.00217
b
0.00190
a
0.00145
表明a催化剂对甲醇氧化有最好的电催化活性、稳定性和抗毒化能力.
（四）稳态极化法
3.电催化与常规化学催化反应的区别反应时，在反应界面上电子的传递过程存在本质差别。常规化学催化：反应物和催化剂之间的电子传递是在限定区域内进行的，既不能从外电路中输入电子，也不从反应体系中导出电子。电子的转移无法从外部加以控制。电催化：利用外部回路控制过电势，使反应速度容易控制。改变电极电势，可以控制氧化或还原反应的方向。输入的电流可以用来作为反应速度的依据。反应前后的自由能变化幅度大。

THB7128 高细分、大功率两相混合式步进电机驱动芯片说明书

THB7128高细分、大功率两相混合式步进电机驱动芯片一、特性：●双全桥MOSFET 驱动，低导通电阻Ron＝0.53Ω●最高耐压40VDC，大电流3.3 A（峰值）●多种细分可选（1、1/2、1/4、1/8、1/16、1/32、1/64、1/128）●自动半流锁定功能●内置混合式衰减模式●内置输入下拉电阻●内置温度保护及过流保护二、管脚图：OUT1A OUT2B OUT2AOUT1B VCC191715 42 1816310 1三、管脚说明：端子端子符号端子说明1 GND 地2 CW/CCW 正／反转信号输入端3 CLK 脉冲信号输入端4 OSC1 斩波频率设定电容连接端5 VREF 电流设定端6 GND 地7 OUT2B B相 OUT输出端8 NFB B相电流检测电阻连接端9 OUT1B B相 OUT输出端10 GND 地11 OUT2A A相 OUT输出端12 NFA A相电流检测电阻连接端13 OUT1A A相 OUT输出端14 VM 电源VM连接端15 VCC 接VCC电源16 M1 细分设置端17 M2 细分设置端18 M3 细分设置端19 ENABLE 脱机信号控制端四、电器参数：1、最高额定值Absolute Maximum Ratings (Ta 25°C)项目符号额定值符号最高工作电压 VMmax ３６Ｖ最大输出电流 Iomax 3.3Ａ最高逻辑输入电压 VINmax 6ＶVREF最高输入电压 VREFmax 3Ｖ工作环境温度 Topg －30～＋105℃保存环境温度 Tstg －40～＋125℃2、正常运行参数范围Operating Range (Ta =30 to 85°C)参数符号最小典型.最大单位逻辑输入电压 VIN２ 5.0 6 V数字信号电源 VCC ３．３ 5.0 6 Ｖ电源电压 VM9 −３２V输出电流 Io0 − 3.０　A电流设定端 VREF0 −3V3、电器特性Electrical Characteristics (Ta = 25°C, VREF =1.5 V, VM = 24 V)项目符号条件最小标准最大符号待机时消耗电流 IMstn VCC=0 200 μA 消耗电流 IM VCC=5V 4 mA TSD温度 TSD 设计保证 180 ℃ Thermal Hysteresis值 ΔTSD 设计保证 40 ℃IinL1 VIN=0.8V 8 μA 逻辑端子输入电流IinH1 VIN=5V 50 μA 逻辑输入“H”Level电压 Vinh 2.0 Ｖ逻辑输入“L”Level电压 Vinl 0.8 Ｖ斩波频率 Fch Cosc1=100pF ８３KHz OSC1端子充放电电流 Iosc1 10 μA 斩波振荡电路Vtup1 1 V 电压阈值 Vtdown10.5 V VREF端子输入电流 Iref VREF=1.5V ＣＬＫ＝１０ＫＨＺ-0.5 μA 通电锁定切换频率 Falert 1.6 Hz Blanking时间 Tbl 1 uS 输出Ronu Io=2.0A、上側ON阻抗 0.3 Ω 输出ON阻抗Rond Io=2.0A、下側ON阻抗 0.2５Ω 输出漏电流 Ioleak VM=３６V 50 μA 二极管正向压降 VD ID＝－2.0A 1．１V 电流设定基准电压 VRF VREF=1.5V、電流比100% 300 mV 输出短路保护Timer Latch时间 Tscp 256 μs五、端子说明1、CLK脉冲输入端（脉冲上升沿有效）2、CW/CCW：电机正反转控制端CW/CCW为低电平时，电机正转CW/CCW为高电平时，电机反转3、ENABLE：使能端ENABLE端子为低电平时，输出强制关断，为高阻状态。

电化学与电分析化学实验

电化学与电分析化学实验Ⅰ电化学电解实验一电解法制备普鲁士蓝膜修饰电极及电化学行为研究一、实验目的了解什么是修饰电极；掌握用电积法制备普鲁士蓝的修饰电极的方法。

二、实验原理化学修饰电极（chemically modified electrode）是由导体或半导体制作的电极，在电极表面涂敷了单分子，多分子的，离子的或聚合物的化合物薄膜，改变了电极界面的性质，电极呈现的性质与电极材料本身任何表面上的性质不同，通过改变电极/电解液界面的微观结构而调制成某种特性。

对玻碳电极进行电化学处理——电沉积法——使之表面形成普鲁士蓝薄膜。

三、仪器、试剂和材料仪器LK2005A型电化学工作站（天津兰力科化学电子有限公司），三电极系统（SCE为参比电极，铂丝为对电极，玻碳电极为工作电极）；试剂0.1mol/L铁氰化钾，1mol/L KCl, 0.2mol/L HCl，0.01mol/L Fe2(SO4)3。

四、实验步骤1、按下列表格配置溶液，并以水定容为10mL：2、制备修饰电极：a)将玻碳电极在润湿的撒有粒度为1.0μm的α- Al2O3粉的抛光布上进行抛光，洗去表面的污物；b)以恒电位和循环电位在上述溶液中电解，在玻碳电极的表面上电沉积成普鲁士蓝修饰膜。

3、修饰电极的电化学行为的研究：将电极放入KCl溶液的溶液中，在与上步同样的条件下用循环伏安法电解玻碳上的普鲁士蓝，并记录伏安图，对比各个溶液制得的伏安图，找出最好的峰形所对应的溶液。

五、实验讨论作为化学修饰电极的基底材料主要是碳（包括石墨，热解石墨和玻碳）和贵金属及半导体。

在采用任何方法之前，所用固体电极必须首先经过表面的清洁处理，目的是为了获得一种新鲜的，活性的和重现性好的电极表面状态，以利于后续的修饰步骤进行。

普鲁士蓝的还原形式K2Fe (CN)6（Everrit盐，ES）和氧化形式FeFe (CN)6（Berlin绿）由于在V（Fe2(SO4)3）= 4mL时制得的修饰电极的氧化还原峰最明显，故对其电化学进行严格的讨论：0.816V电位处出现一个很小的还原峰，0.150V的电位处，普鲁士蓝还原为Everitt盐的i-E曲线为尖峰；0.198V处普鲁士蓝氧化成Berlin绿的i-E曲线为尖峰。

线性扫描伏安法与循环伏安法

线性扫描伏安法与循环伏安法教案实验线性扫描伏安法与循环伏安法⼀、实验⽬的1、了解线性扫描伏安法和循环伏安法的特点和基本原理2、掌握线性扫描伏安法的定量分析⽅法3、了解循环伏安法在研究电极机理⽅⾯的应⽤⼆、基本原理1、线性扫描伏安法线性扫描伏安法是在电极上施加⼀个线性变化的电压，即电极电位是随外加电压线性变化记录⼯作电极上的电解电流的⽅法。

记录的电流随电极电位变化的曲线称为线性扫描伏安图。

可逆电极反应的峰电流可由下式表⽰：ip=0.4463nFADo1/2Co*(nFv/RT)1/2=5.99x105n3/2ADo1/2v1/2Co* (1) 式中n为电⼦交换数，A为电极有效⾯积，Do为反应物的扩散系数，v为电位扫描速度，Co*为反应物（氧化态）的本体浓度。

也可以简化为（A不变时）ip=kv1/2Co* (2) 即峰电流与扫描速度的1/2次⽅成正⽐，与反应物的本体浓度成正⽐。

这就是线性扫描伏安法定量分析的依据。

对于可逆电极反应，峰电位与扫描速度⽆关，Ep=E1/2±1.1RT/nF (3) 但当电极反应为不可逆时（准可逆或完全不可逆）。

Ep随扫描速度增⼤⽽负（正）移。

2、循环伏安法循环伏安法的原理同线性扫描伏安法相同，只是⽐线性扫描伏安法多了⼀个回扫。

所以称为循环伏安法。

循环伏安法是电化学⽅法中最常⽤的实验技术。

循环伏安法有两个重要的实验参数，⼀是峰电位之⽐，⼆是峰电位之差。

对于可逆电极反应，峰电流之⽐iPc/iPa(阴极峰电流与阳极峰电流之⽐)的绝对值约等于1。

峰电流之差（ΔEp=|Epa--Epc|）约为59.6mV(25℃).ΔEp=2.22 RT/nF (4)三、仪器和试剂1、电化学分析系统2、三电极系统：玻碳电极为⼯作电极，Ag/AgCl电极（或饱和⽢汞电极）为参⽐电极，铂电极为对极。

3、1.0x10-3mol/L K3[Fe(CN)6](铁氰化钾)溶液（含0.1mol/L KCl）四、实验步骤1、选择仪器实验⽅法：电位扫描技术——线性扫描伏安法或循环伏安法。

804(3)-5静态测试指南

静态测试指南1.概述静态测试是不运行被测试程序而寻找程序代码中可能存在的错误或评估程序代码的过程。

静态测试包括代码检查、静态分析两种途径。

代码检查包括桌面检查、代码审查、代码走查和技术评审等。

静态分析则是一种计算机辅助的静态分析方法。

静态测试目的是为了发现和解决逻辑设计和编码错误。

2.术语和缩写3.参考文档《QAC-8.1-Win-UsersGuide.pdf》《1.1-使用基本配置.pdf》《1.2-编码规则检查.pdf》《1.3-代码结构和度量.pdf》《2.2-规则裁剪与定制.pdf》《2.3-度量指标解析.pdf》4.度量指标的解析4.1函数度量的关键指标1)STA Vx-函数平均语句数该度量用于检测长语句的部分。

由大量文本元素（操作符和操作数）构成的语句需要阅读者花费大量的精力。

因此，该度量可以看成是程序可读性的标志。

2)STLIN -可维护代码行数该度量值与代码可读性相关，越长的函数越难读，为便于单屏或单页阅读，建议该度量值上限为200。

3)STCYC -圈复杂度圈复杂度高时意味着函数的模块化不充分或者函数内逻辑过于复杂。

软件度量研究标明，圈复杂度大于10的函数都可能存在复杂度的问题。

4)STMIF -控制结构中的最大嵌套层次该度量表示代码中控制流图中最大的嵌套深度。

推荐最大值为5。

降低该值的办法之一是将嵌套拆分成多个函数，这样可以改进代码可读性，降低嵌套数和函数圈复杂度。

5)STPTH -估计静态路径数该度量类似于Nejmeh的NPATH统计，给出了函数控制流图中可能路径的上限。

它是函数中非循环执行路径的数目。

4.2文件度量的关键指标1)STBME - 编程估计时间估计每个源文件开发所需的时间，单位（人月）。

2)STTDE -编程总时间显示源码的开发所需总月数，单位（月）3)STBUG -剩余BUG数在记号估计的基础上，对文件中bug数量的估计。

它的值一般低于各函数STPBG的总和。