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2526中文资料

C T F AC TO RYData Sheet27447.2*2526 AND2536USB DUAL POWER CONTROL SWITCHESThe A2526EL/M and A2536EL/M are integrated high-side dualpower switches, optimized for self-powered and bus-powered Univer-sal Serial Bus (USB) applications. Few external components arenecessary to satisfy USB requirements. The A2526EL/EM ENABLEinputs are active high; the A2536EL/EM are active low.All devices are ideally suited for USB applications. Each switchchannel supplies up to 500 mA as required by USB peripheral devices.In addition, the switch’s low on-resistance permits achieving the USBvoltage-drop requirements. Fault current is limited to typically750 mA, satisfying the UL 25 VA safety requirements, and a flagoutput is available to indicate a fault condition to the local USBcontroller. Momentary voltage drops that may occur on the upstreamport when the switch is enabled in bus-powered applications is elimi-nated by a “soft start” feature.Additional features include thermal shutdown to prevent catastrophicswitch failure from high-current loads, undervoltage lockout to ensurethat the device remains OFF unless there is a valid input voltagepresent, and 3.3 V and 5 V logic-compatible enable inputs.These switches are provided in 8-pin mini-DIP (suffix ‘M’) and8-lead SOIC (suffix ‘L’) packages.FeaturesI 2.7 V to 5.8 V InputI Up to 500 mA Continuous Load Current per PortI140 mΩ Maximum ON-ResistanceI 1.25 A Maximum Short-Circuit Current LimitI Individual Open-Drain Fault Flag OutputsI125 µA Typical ON-State Supply CurrentI<1 µA Typical OFF-State Supply CurrentI Outputs Can be Forced Higher Than Input (off-state)I Thermal ShutdownI 2.2 V Typical Undervoltage LockoutI0.6 ms Turn On (soft-start) and Fast Turn OffI A2526 (active-high) Improved Replacement for MIC2526-1I A2536 (active-low) Improved Replacement for MIC2526-2ApplicationsI USB Hosts and Self-Powered HubsI USB Bus-Powered HubsI Hot Plug-In Power SuppliesI Battery-Charger Circuits115 Northeast Cutoff, Box 15036Worcester, Massachusetts 01615-0036 (508) 853-******** AND 2536USBDUAL POWER CONTROL SWITCHES2FUNCTIONAL BLOCK DIAGRAMCopyright © 2000, Allegro MicroSystems, Inc.OUT A IN GND OUT BDwg. PP-070-3A2536EMNote that the A2536EM (DIP) and theA2536EL (SOIC) are electrically identical andshare a common terminal number assignment.5075100125150A L L O W AB L E P AC K A G E P O W E RD I S S I P A T I O N I N W A T T SAMBIENT TEMPERATURE IN °C25Dwg. GP-009-2Dwg. FP-049-1OUT B FLG B EN BGNDAAEN A2526 AND 2536USBDUAL POWER CONTROLSWITCHES3Electrical Characteristics at T A = 25°C, V IN = 5 V, each output tested separately (unless otherwise noted).LimitsParameterTest Conditions Min Typ Max Units Operating Voltage Range V IN2.7– 5.8V Switch ResistanceV IN = 5 V, I OUT = 500 mA –100140m ΩV IN = 3.3 V, I OUT = 500 mA–100140m ΩOutput Leakage Current Each output (output disabled), V IN = 5 V, V OUT = 0–<1.010µA Maximum Load Current Each output500––mA Short-Circuit Current Limit Each output (enabled into load), V OUT = 4 V 0.50.75 1.25A Current-Limit Threshold Ramped load applied to enabled output, V OUT ≤ 4 V –0.9–A ENABLE Input ThresholdLow-to-high transition – 2.1 2.4V High-to-low transition0.8 1.9–V ENABLE Input Hysteresis –0.2–V ENABLE Input Current V EN = 0 V to 5.5 V–±0.01±1.0µA ENABLE Input Cap.– 1.0–pF Output Turn-On Delay R L = 10 Ω, C L = 1 µF, 50% V ENABLE to 10% V OUT –0.5–ms Output Turn-On Rise Time R L = 10 Ω, C L = 1 µF, 10% V OUT to 90% V OUT –0.6–ms Output Turn-Off Delay R L = 10 Ω, C L = 1 µF, 50% V ENABLE to 90% V OUT –10–µs Output Turn-Off Fall Time R L = 10 Ω, C L = 1 µF, 90% V OUT to 10% V OUT –25–µs Error Flag Output V IN = 5 V, I L = 10 mA –8.0–ΩResistanceV IN = 3.3 V, I L = 10 mA –10–ΩError Flag Off Current V FLG = 5 V–0.01–µA Supply CurrentBoth switches disabled (see note), OUT = open –0.2 5.0µA Both switches enabled (see note), OUT = open–125160µA UVLO ThresholdIncreasing V IN – 2.35–V Decreasing V IN– 2.2–V Over-Temperature Increasing T J –165–°C Shutdown ThresholdDecreasing T J –155–°CNote — Disabled is ≤ 0.8 V and enabled is ≥ 2.4 V (active high) for the A2526EL/EM. Disabled is ≥ 0.8V IN and enabled is ≤ 0.8 V (active low) for the A2536EL/EM.115 Northeast Cutoff, Box 15036Worcester, Massachusetts 01615-0036 (508) 853-50002526 AND 2536USBDUAL POWER CONTROL SWITCHES4FUNCTIONAL DESCRIPTIONPower switchThe power switch is an N-channel MOSFET with a maximum on-state resistance of 140 m Ω (V IN = 5 V). Configured as a high-side switch, the power switch prevents current flow in either direction if disabled. The drain body diode is discon-nected from the source when the switch is OFF allowing the output voltage to exceed the input voltage without causing current conduction. The power switch supplies a minimum of 500 mA per switch.Charge pumpAn internal charge pump supplies power to the driver circuit and provides the necessary voltage to pull the gate of the MOSFET above the source. The charge pump operates from input voltages as low as 2.7 V. The charge pump is limited to 2.5 µA to establish a controlled turn on time of typically 1 ms.DriverThe driver controls the gate voltage of the power switch. To limit large current surges and reduce the associated electromag-netic interference (EMI) produced, the driver incorporatescircuitry that controls the rise times and fall times of the output voltage. The rise time is typically 1 ms.ENABLE (EN or EN)The logic enable disables the power switch and the bias for the charge pump, driver, and other circuitry to reduce the supply current to less than 5 µA maximum when a logic high is present on EN (A2526) or a logic low is present (A2536). The proper logic level restores bias to the drive and control circuits and turns the power ON. The enable input is a compatible with both TTL and CMOS logic levels.Fault Flag (FLG)This open drain output is asserted (active low) when anovercurrent or over temperature condition is encountered. The output will remain asserted until the overcurrent or over temperature condition is removed.Current senseA sense FET monitors the current supplied to the load. The sense FET measures current more efficiently than conventional resistance methods. When an overload or short circuit isencountered, the current-sense circuitry sends a control signal to the driver. The driver in turn reduces the gate voltage anddrives the power FET into its saturation region, which switches the output into a constant-current mode and holds the current constant while varying the voltage on the load.Thermal senseAn internal thermal-sense circuit shuts off the power switch when the junction temperature rises to approximately 165°C.Hysteresis is built into the thermal sense circuit. After the device has cooled approximately 10°C, the switch turns back ON. The switch continues to cycle off and on until the fault is removed.Undervoltage lockoutA voltage-sense circuit monitors the input voltage. When the input voltage is approximately 2 V, a control signal turns OFF the power switch.2526 AND 2536USBDUAL POWER CONTROLSWITCHES5V OUT 1 V/V ENABLE 200 µs/V OUT 1 V/V ENABLE50 µs/NO-LOAD SWITCHING PERFORMANCEV OUT 1 V/V ENABLE50 µs/115 Northeast Cutoff, Box 15036Worcester, Massachusetts 01615-0036 (508) 853-50002526 AND 2536USBDUAL POWER CONTROL SWITCHES6CAPACITIVE-LOAD SWITCHING PERFORMANCEI OUT500 mA/V ENABLEV FAULTV OUT 2 V/1 ms/ C L = 1000 µF R L = 12 ΩCURRENT LIMITINGI OUT500 mA/V ENABLEV FAULT V OUT 2 V/1 ms/ C L = 50 µF R L = 100 ΩI OUT500 mA/V ENABLEV FAULTV OUT 2 V/1 ms/ C L = 100 µF R L = 100 Ω2526 AND 2536USBDUAL POWER CONTROLSWITCHES7I OUT400 mA/V FAULT500 ms/15 m ΩSHORT CIRCUITTHERMAL SHUTDOWNI OUT 1 A/V FAULT500 ms/ R L = 15 m ΩTHERMAL SHUTDOWNI OUT 4 A/V FAULTV OUT5 ms/ 15 m ΩSHORT CIRCUITI OUT 4 A/V FAULTV OUT2 µs/15 m ΩSHORT CIRCUITOUTPUT SHORT-CIRCUIT PERFORMANCE115 Northeast Cutoff, Box 15036Worcester, Massachusetts 01615-0036 (508) 853-50002526 AND 2536USBDUAL POWER CONTROL SWITCHES8OvercurrentA sense FET is employed for overcurrent conditions. Unlike current-sense resistors, sense FETs do not increase the series resistance of the current path. When an overcurrent condition is detected, the device maintains a constant output current and reduces the output voltage accordingly. Complete shutdown occurs only if the fault is present long enough to activate thermal limiting.Three possible overload conditions can occur. In the first condition, the output has been shorted before the device is enabled or between V IN has been applied. The device senses the short and immediately switches into a constant-current output.In the second condition, the short occurs while the device is enabled. At the instant the short occurs, very high currents may flow for a short time before the current-limit circuit can react .After the current-limit circuit has tripped (reached theovercurrent trip threshold) the device switches into constant-current mode.In the third condition, the load has been gradually increased beyond the recommended operating current. The current is permitted to rise until the current-limit threshold is reached or until the thermal limit of the device is exceeded. The device is capable of delivering current up to the current-limit threshold without damage. Once the threshold has been reached, the device switches into its constant-current mode.Fault Flag (FLG)The FLG open-drain output is asserted (active low) when an overcurrent or over-temperature condition is encountered. The output will remain asserted until the overcurrent or over-temperature condition is removed. Connecting a heavycapacitive load to an enabled device can cause momentary false over-current reporting from the inrush current flowing through the device, charging the downstream capacitor. An RC filter can be connected to the terminal to reduce false overcurrent reporting. Using low-ESR electrolytic capacitors on the output lowers the inrush current flow through the device during hot-plug events by providing a low impedance energy source,thereby reducing erroneous overcurrent reporting.Power dissipation and junction temperatureThe low on-resistance of the n-channel MOSFET allows small surface-mount packages, such as an SOIC, to pass large currents. The thermal resistance of these packages are highcompared to those of power packages; it is good design practice to check power dissipation and junction temperature. The first step is to find r DS(on) at the input voltage and operating tempera-ture. Next, calculate the power dissipation using:P D = r DS(on) x I 2Finally, calculate the junction temperature:T J = P D x R θJA + T A where:T A = ambient temperature °CR θJA = thermal resistance (SOIC = 108°C/W, DIP = 60°C/W ).Thermal protectionThermal protection prevents damage to the IC when heavy-overload or short-circuit faults are present for extended periods of time. The faults force these devices into constant-current mode, which causes the voltage across the high-side switch to increase; under short-circuit conditions, the voltage across the switch is equal to the input voltage. The increased dissipation causes the junction temperature to rise to high levels. The protection circuit senses the junction temperature of the switch and shuts it OFF. Hysteresis is built into the thermal sense circuit, and after the device has cooled approximately 20°, the switch turns back ON. The switch continues to cycle in this manner until the load fault or input power is removed.Undervoltage lock-out (UVLO)An undervoltage lockout ensures that the power switch is in the OFF state at power up. Whenever the input voltage falls below approximately 2 V, the power switch will be quickly turned OFF. This facilitates the design of hot-insertion systems where it is not possible to turn OFF the power switch before input power is removed. The UVLO will also keep the switch from being turned ON until the power supply has reached at least 2 V, even if the switch is enabled. Upon reinsertion, the power switch will be turned ON, with a controlled rise time to reduce EMI and voltage overshoots.Power supply considerationsA 0.1 µF ceramic bypass capacitor between IN and GND, close to the device, is recommended. Placing a high-value electro-lytic capacitor on the output terminals is also desirable when the output load is heavy. The capacitor reduces power supplytransients that may cause ringing on the input. Also, bypassing the output with a 0.01 µF to 0.1 µF ceramic capacitor improves the immunity of the device to short-circuit transients.APPLICATIONS INFORMATION2526 AND 2536USBDUAL POWER CONTROLSWITCHES9TYPICAL APPLICATIONSVIN ON/OFF A OVER-CURRENT AGROUNDUSB CONTROLLERON/OFF BOVER-BDwg. EP-070-11A3.3 V REGUSB Host ApplicationUSB Bus-Powered HubVIN ON/OFF A OVER-CURRENT AGROUND5 VUSB CONTROLLERUSB ON/OFF BOVER-BDwg. EP-070-1A3.3 V115 Northeast Cutoff, Box 15036Worcester, Massachusetts 01615-0036 (508) 853-50002526 AND 2536USBDUAL POWER CONTROL SWITCHES10A2526EL and A2536ELDimensions in Inches (for reference only)Dimensions in Millimeters (controlling dimensions)Dwg. MA-007-8 inBSCDwg. MA-007-8 mmNOTES:1.Lead spacing tolerance is non-cumulative.2.Exact body and lead configuration at vendor’s option within limits shown.2526 AND 2536USBDUAL POWER CONTROLSWITCHES11NOTES:1.Leads 1, 4, 5, and 8 may be half leads at vendor’s option.2.Lead thickness is measured at seating plane or below.3.Lead spacing tolerance is non-cumulative.4.Exact body and lead configuration at vendor’s option within limits shown.Dwg. MA-001-8A mmA2526EM and A2536EMDimensions in Inches (controlling dimensions)Dimensions in Millimeters (for reference only)115 Northeast Cutoff, Box 15036Worcester, Massachusetts 01615-0036 (508) 853-50002526 AND 2536USBDUAL POWER CONTROL SWITCHES12The products described here are manufactured under one or more U.S. patents or U.S. patents pending.Allegro MicroSystems, Inc. reserves the right to make, from time to time, such departures from the detail specifications as may berequired to permit improvements in the performance, reliability, or manufacturability of its products. Before placing an order, the user is cautioned to verify that the information being relied upon is current.Allegro products are not authorized for use as critical components in life-support devices or systems without express written approval.The information included herein is believed to be accurate and reliable. However, Allegro MicroSystems, Inc. assumes no responsi-bility for its use; nor for any infringement of patents or other rights of third parties which may result from its use.。

Quectel_M26-OpenCPU_硬件设计手册_V1.0

2 综述 ...................................................................................................................................................... 11
3.5.1. 主串口............................................................................................................................. 34
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Q n 3.2.2. 关机 ................................................................................................................................ 26 3.2.2.1. PWRKEY 引脚关机............................................................................................ 26 e 3.2.2.2. API 函数关机...................................................................................................... 27 fid 3.2.2.3. 低压自动关机 ..................................................................................................... 27 3.2.3. 推荐的系统开关机电路 ................................................................................................... 28 3.3. 省电技术 ................................................................................................................................ 29

12kV干燥空气气体绝缘开关柜热分析及优化

12kV干燥空气气体绝缘开关柜热分析及优化赵婧;杨长洲;徐敏;肖松【摘要】数学建模、热源计算、仿真结果和温升实验表明,在相同充气压力下,SF6的对流散热能力远大于干燥空气;在同尺寸、同气压且自然对流的条件下,干燥空气气体绝缘开关柜的温升比SF6气体开关柜高出约12K,干燥空气开关柜温升超出了国标.故采用提高主回路导体和壳体表面的发射系数,添加主回路散热器等方法对开关柜结构进行优化,仿真结果表明,优化后的干燥空气开关柜温升符合国家标准要求,提高了干燥空气开关柜的可靠性和安全性.【期刊名称】《厦门理工学院学报》【年(卷),期】2018(026)005【总页数】6页(P19-24)【关键词】12kV气体绝缘开关柜;热分析;干燥空气;SF6气体【作者】赵婧;杨长洲;徐敏;肖松【作者单位】厦门理工学院电气工程与自动化学院,福建厦门361024;厦门理工学院电气工程与自动化学院,福建厦门361024;厦门理工学院电气工程与自动化学院,福建厦门361024;厦门理工学院电气工程与自动化学院,福建厦门361024【正文语种】中文【中图分类】TM591中压开关柜是配电系统的重要组成部分，随着人们对环保问题的日益重视，干燥空气气体绝缘开关柜成为一种发展趋势[1]。

除环保性能外，中压开关柜的热性能关系到整个开关柜能否正常工作和长期使用。

当开关柜运行电流过大、安装工艺不完善或者设计存在一定缺陷时，容易造成开关柜的温升超标，进而直接影响开关柜的安全稳定运行[2-4]。

目前，不少高校和企业研究人员对气体绝缘开关柜做了相关的研究。

张俊民等[5]对27.5 kV GIS开关柜母线室建立了传导、对流和辐射换热相互耦合的数学模型，得到了母线室内的三维温度场与气流场的分布;程显等[6-7]对SF6和N2混合气体开关柜进行仿真计算，当通入1.1倍额定电流时开关柜温升在国标规定范围内，可知SF6混合气体一定程度上可满足开关柜散热的需求。

M2526造纸电机调试数据(1)

AA2521
AA2508 AA2508 AA2507 AA2507 AA2511 AA2511
61 77 78 74 79
25-54502-E125-54M5105-P125-04M0102-A125-04M0105-P125-04M0140-E1-
M1
损纸处理系统 BROKESYSTEM 机下损纸碎浆机搅拌器机下损纸浆泵损纸贮浆塔搅拌器
M1
压力筛网下白水泵网下白水泵
YE3-225M-4 YE3-200L-4 YE3-200L-4
45 380 84.4 1485 30 380 56.6 1470 30 380 56.6 1470
AA2505
AA2505
AA2505 AA2505 AA2505 AA2506 AA2506 AA2505 AA2507
QAEJ100L4A DRE 100M6BE5HF
DRE100LC4 YE3-225S-4 TYPE Y2VF250M-2 TYPE Y2VF250M-2 YE3-180M-2 YEP Y2VF180M-2 YEP Y2VF180M-2 TYPE Y2VF250M-2 TYPE Y2VF250M-2 TYPE Y2VF225M-2 YE3-132M-4 YE3-132M-4 YE3-225S-4 YE3-160L-6 YE3-160M4
7.5 380 15 1440 30 380 56.8 30 380 56.8 5.5 380 11 5.5 380 11 45 380 82.3 45 380 82.3
6317-C3 6311-SKF 6311-C3 6312-SKF 6313-C3
6313-C3 6313-C3 6313-C3 6311-C3 6311-C3 6311-C3 6313-C3 6313-C3 6313-C3 6208-2Z-C3 6208-2Z-C3 6313-C3 6309-C3 6309=SKF

南京邮电大学专业学位硕士研究生学...

单位代码：10293密级：专业学位硕士论文论文题目：复合周期红外空芯Bragg光纤的设计及损耗分析D esign and C haracteristic A nalysis of t he I nfrared H ollow-core Bragg F iber with Compound P eriodThesis Submitted to Nanjing University of Posts andTelecommunications for the Degree ofMaster of EngineeringByShen ShanshanSupervisor:Prof.Chen HemingFebruary2013南京邮电大学学位论文原创性声明本人声明所呈交的学位论文是我个人在导师指导下进行的研究工作及取得的研究成果。

尽我所知，除了文中特别加以标注和致谢的地方外，论文中不包含其他人已经发表或撰写过的研究成果，也不包含为获得南京邮电大学或其它教育机构的学位或证书而使用过的材料。

与我一同工作的同志对本研究所做的任何贡献均已在论文中作了明确的说明并表示了谢意。

本人学位论文及涉及相关资料若有不实，愿意承担一切相关的法律责任。

研究生签名：_____________日期：____________南京邮电大学学位论文使用授权声明本人授权南京邮电大学可以保留并向国家有关部门或机构送交论文的复印件和电子文档；允许论文被查阅和借阅；可以将学位论文的全部或部分内容编入有关数据库进行检索；可以采用影印、缩印或扫描等复制手段保存、汇编本学位论文。

本文电子文档的内容和纸质论文的内容相一致。

论文的公布（包括刊登）授权南京邮电大学研究生院办理。

涉密学位论文在解密后适用本授权书。

研究生签名：____________导师签名：____________日期：_____________摘要随着光纤技术的发展，人们在光纤领域展开了大量的理论研究和应用研究工作。

南京锐芯电子科技有限公司介绍企业发展分析报告模板

Enterprise Development专业品质权威Analysis Report企业发展分析报告南京锐芯电子科技有限公司免责声明:本报告通过对该企业公开数据进行分析生成，并不完全代表我方对该企业的意见，如有错误请及时联系;本报告出于对企业发展研究目的产生，仅供参考，在任何情况下，使用本报告所引起的一切后果，我方不承担任何责任:本报告不得用于一切商业用途，如需引用或合作，请与我方联系:南京锐芯电子科技有限公司1企业发展分析结果1.1 企业发展指数得分企业发展指数得分南京锐芯电子科技有限公司综合得分说明：企业发展指数根据企业规模、企业创新、企业风险、企业活力四个维度对企业发展情况进行评价。

该企业的综合评价得分需要您得到该公司授权后，我们将协助您分析给出。

1.2 企业画像类别内容行业空资质空产品服务：电子产品销售；电子元器件批发；电子元器件1.3 发展历程2工商2.1工商信息2.2工商变更2.3股东结构2.4主要人员2.5分支机构2.6对外投资2.7企业年报2.8股权出质2.9动产抵押2.10司法协助2.11清算2.12注销3投融资3.1融资历史3.2投资事件3.3核心团队3.4企业业务4企业信用4.1企业信用4.2行政许可-工商局4.3行政处罚-信用中国4.5税务评级4.6税务处罚4.7经营异常4.8经营异常-工商局4.9采购不良行为4.10产品抽查4.12欠税公告4.13环保处罚4.14被执行人5司法文书5.1法律诉讼（当事人）5.2法律诉讼（相关人）5.3开庭公告5.4被执行人5.5法院公告5.6破产暂无破产数据6企业资质6.1资质许可6.2人员资质6.3产品许可6.4特殊许可7知识产权7.1商标7.2专利7.3软件著作权7.4作品著作权7.5网站备案7.6应用APP7.7微信公众号8招标中标8.1政府招标8.2政府中标8.3央企招标8.4央企中标9标准9.1国家标准9.2行业标准9.3团体标准9.4地方标准10成果奖励10.1国家奖励10.2省部奖励10.3社会奖励10.4科技成果11 土地11.1大块土地出让11.2出让公告11.3土地抵押11.4地块公示11.5大企业购地11.6土地出租11.7土地结果11.8土地转让12基金12.1国家自然基金12.2国家自然基金成果12.3国家社科基金13招聘13.1招聘信息感谢阅读:感谢您耐心地阅读这份企业调查分析报告。

南京美瑞电气有限公司介绍企业发展分析报告模板

Enterprise Development专业品质权威Analysis Report企业发展分析报告南京美瑞电气有限公司免责声明:本报告通过对该企业公开数据进行分析生成，并不完全代表我方对该企业的意见，如有错误请及时联系;本报告出于对企业发展研究目的产生，仅供参考，在任何情况下，使用本报告所引起的一切后果，我方不承担任何责任:本报告不得用于一切商业用途，如需引用或合作，请与我方联系:南京美瑞电气有限公司1企业发展分析结果1.1 企业发展指数得分企业发展指数得分南京美瑞电气有限公司综合得分说明：企业发展指数根据企业规模、企业创新、企业风险、企业活力四个维度对企业发展情况进行评价。

该企业的综合评价得分需要您得到该公司授权后，我们将协助您分析给出。

1.2 企业画像类别内容行业空资质增值税一般纳税人产品服务：机械电气设备制造；电气设备销售；输配电及1.3 发展历程2工商2.1工商信息2.2工商变更2.3股东结构2.4主要人员2.5分支机构2.6对外投资2.7企业年报2.8股权出质2.9动产抵押2.10司法协助2.11清算2.12注销3投融资3.1融资历史3.2投资事件3.3核心团队3.4企业业务4企业信用4.1企业信用4.2行政许可-工商局4.3行政处罚-信用中国4.4行政处罚-工商局4.5税务评级4.6税务处罚4.7经营异常4.8经营异常-工商局4.9采购不良行为4.10产品抽查4.11产品抽查-工商局4.12欠税公告4.13环保处罚4.14被执行人5司法文书5.1法律诉讼（当事人）5.2法律诉讼（相关人）5.3开庭公告5.4被执行人5.5法院公告5.6破产暂无破产数据6企业资质6.1资质许可6.2人员资质6.3产品许可6.4特殊许可7知识产权7.1商标7.2专利7.3软件著作权7.4作品著作权7.5网站备案7.6应用APP7.7微信公众号8招标中标8.1政府招标8.2政府中标8.3央企招标8.4央企中标9标准9.1国家标准9.2行业标准9.3团体标准9.4地方标准10成果奖励10.1国家奖励10.2省部奖励10.3社会奖励10.4科技成果11土地11.1大块土地出让11.2出让公告11.3土地抵押11.4地块公示11.5大企业购地11.6土地出租11.7土地结果11.8土地转让12基金12.1国家自然基金12.2国家自然基金成果12.3国家社科基金13招聘13.1招聘信息感谢阅读:感谢您耐心地阅读这份企业调查分析报告。

南京新袖电器仪表有限公司介绍企业发展分析报告模板

Enterprise Development专业品质权威Analysis Report企业发展分析报告南京新袖电器仪表有限公司免责声明:本报告通过对该企业公开数据进行分析生成，并不完全代表我方对该企业的意见，如有错误请及时联系;本报告出于对企业发展研究目的产生，仅供参考，在任何情况下，使用本报告所引起的一切后果，我方不承担任何责任:本报告不得用于一切商业用途，如需引用或合作，请与我方联系:南京新袖电器仪表有限公司1企业发展分析结果1.1 企业发展指数得分企业发展指数得分南京新袖电器仪表有限公司综合得分说明：企业发展指数根据企业规模、企业创新、企业风险、企业活力四个维度对企业发展情况进行评价。

该企业的综合评价得分需要您得到该公司授权后，我们将协助您分析给出。

1.2 企业画像类别内容行业空资质增值税一般纳税人产品服务：电子元器件与机电组件设备制造；电子元器件1.3 发展历程2工商2.1工商信息2.2工商变更2.3股东结构2.4主要人员2.5分支机构2.6对外投资2.7企业年报2.8股权出质2.9动产抵押2.10司法协助2.11清算2.12注销3投融资3.1融资历史3.2投资事件3.3核心团队3.4企业业务4企业信用4.1企业信用4.2行政许可-工商局4.3行政处罚-信用中国4.4行政处罚-工商局4.5税务评级4.6税务处罚4.7经营异常4.8经营异常-工商局4.9采购不良行为4.10产品抽查4.11产品抽查-工商局4.12欠税公告4.13环保处罚4.14被执行人5司法文书5.1法律诉讼（当事人）5.2法律诉讼（相关人）5.3开庭公告5.4被执行人5.5法院公告5.6破产暂无破产数据6企业资质6.1资质许可6.2人员资质6.3产品许可6.4特殊许可7知识产权7.1商标7.2专利7.3软件著作权7.4作品著作权7.5网站备案7.6应用APP7.7微信公众号8招标中标8.1政府招标8.2政府中标8.3央企招标8.4央企中标9标准9.1国家标准9.2行业标准9.3团体标准9.4地方标准10成果奖励10.1国家奖励10.2省部奖励10.3社会奖励10.4科技成果11土地11.1大块土地出让11.2出让公告11.3土地抵押11.4地块公示11.5大企业购地11.6土地出租11.7土地结果11.8土地转让12基金12.1国家自然基金12.2国家自然基金成果12.3国家社科基金13招聘13.1招聘信息感谢阅读:感谢您耐心地阅读这份企业调查分析报告。

南京优倍源电子科技有限公司介绍企业发展分析报告模板

Enterprise Development专业品质权威Analysis Report企业发展分析报告南京优倍源电子科技有限公司免责声明:本报告通过对该企业公开数据进行分析生成，并不完全代表我方对该企业的意见，如有错误请及时联系;本报告出于对企业发展研究目的产生，仅供参考，在任何情况下，使用本报告所引起的一切后果，我方不承担任何责任:本报告不得用于一切商业用途，如需引用或合作，请与我方联系:南京优倍源电子科技有限公司1企业发展分析结果1.1 企业发展指数得分企业发展指数得分南京优倍源电子科技有限公司综合得分说明：企业发展指数根据企业规模、企业创新、企业风险、企业活力四个维度对企业发展情况进行评价。

该企业的综合评价得分需要您得到该公司授权后，我们将协助您分析给出。

1.2 企业画像类别内容行业空资质空产品服务：货物进出口；进出口代理；各类工程建设活动1.3 发展历程2工商2.1工商信息2.2工商变更2.3股东结构2.4主要人员2.5分支机构2.6对外投资2.7企业年报2.8股权出质2.9动产抵押2.10司法协助2.11清算2.12注销3投融资3.1融资历史3.2投资事件3.3核心团队3.4企业业务4企业信用4.1企业信用4.2行政许可-工商局4.3行政处罚-信用中国4.5税务评级4.6税务处罚4.7经营异常4.8经营异常-工商局4.9采购不良行为4.10产品抽查4.12欠税公告4.13环保处罚4.14被执行人5司法文书5.1法律诉讼（当事人）5.2法律诉讼（相关人）5.3开庭公告5.4被执行人5.5法院公告5.6破产暂无破产数据6企业资质6.1资质许可6.2人员资质6.3产品许可6.4特殊许可7知识产权7.1商标7.2专利7.3软件著作权7.4作品著作权7.5网站备案7.6应用APP7.7微信公众号8招标中标8.1政府招标8.2政府中标8.3央企招标8.4央企中标9标准9.1国家标准9.2行业标准9.3团体标准9.4地方标准10成果奖励10.1国家奖励10.2省部奖励10.3社会奖励10.4科技成果11 土地11.1大块土地出让11.2出让公告11.3土地抵押11.4地块公示11.5大企业购地11.6土地出租11.7土地结果11.8土地转让12基金12.1国家自然基金12.2国家自然基金成果12.3国家社科基金13招聘13.1招聘信息感谢阅读:感谢您耐心地阅读这份企业调查分析报告。

南京特瑞线路器材有限公司介绍企业发展分析报告模板

Enterprise Development专业品质权威Analysis Report企业发展分析报告南京特瑞线路器材有限公司免责声明:本报告通过对该企业公开数据进行分析生成，并不完全代表我方对该企业的意见，如有错误请及时联系;本报告出于对企业发展研究目的产生，仅供参考，在任何情况下，使用本报告所引起的一切后果，我方不承担任何责任:本报告不得用于一切商业用途，如需引用或合作，请与我方联系:南京特瑞线路器材有限公司1企业发展分析结果1.1 企业发展指数得分企业发展指数得分南京特瑞线路器材有限公司综合得分说明：企业发展指数根据企业规模、企业创新、企业风险、企业活力四个维度对企业发展情况进行评价。

该企业的综合评价得分需要您得到该公司授权后，我们将协助您分析给出。

1.2 企业画像类别内容行业空资质增值税一般纳税人产品服务、五金产品、防雷材料、铝合金管母线、绝缘铜1.3 发展历程2工商2.1工商信息2.2工商变更2.3股东结构2.4主要人员2.5分支机构2.6对外投资2.7企业年报2.8股权出质2.9动产抵押2.10司法协助2.11清算2.12注销3投融资3.1融资历史3.2投资事件3.3核心团队3.4企业业务4企业信用4.1企业信用4.2行政许可-工商局4.3行政处罚-信用中国4.4行政处罚-工商局4.5税务评级4.6税务处罚4.7经营异常4.8经营异常-工商局4.9采购不良行为4.10产品抽查4.11产品抽查-工商局4.12欠税公告4.13环保处罚4.14被执行人5司法文书5.1法律诉讼（当事人）5.2法律诉讼（相关人）5.3开庭公告5.4被执行人5.5法院公告5.6破产暂无破产数据6企业资质6.1资质许可6.2人员资质6.3产品许可6.4特殊许可7知识产权7.1商标7.2专利7.3软件著作权7.4作品著作权7.5网站备案7.6应用APP7.7微信公众号8招标中标8.1政府招标8.2政府中标8.3央企招标8.4央企中标9标准9.1国家标准9.2行业标准9.3团体标准9.4地方标准10成果奖励10.1国家奖励10.2省部奖励10.3社会奖励10.4科技成果11土地11.1大块土地出让11.2出让公告11.3土地抵押11.4地块公示11.5大企业购地11.6土地出租11.7土地结果11.8土地转让12基金12.1国家自然基金12.2国家自然基金成果12.3国家社科基金13招聘13.1招聘信息感谢阅读:感谢您耐心地阅读这份企业调查分析报告。

南京森美特电子科技有限公司介绍企业发展分析报告模板

Enterprise Development专业品质权威Analysis Report企业发展分析报告南京森美特电子科技有限公司免责声明:本报告通过对该企业公开数据进行分析生成，并不完全代表我方对该企业的意见，如有错误请及时联系;本报告出于对企业发展研究目的产生，仅供参考，在任何情况下，使用本报告所引起的一切后果，我方不承担任何责任:本报告不得用于一切商业用途，如需引用或合作，请与我方联系:南京森美特电子科技有限公司1企业发展分析结果1.1 企业发展指数得分企业发展指数得分南京森美特电子科技有限公司综合得分说明：企业发展指数根据企业规模、企业创新、企业风险、企业活力四个维度对企业发展情况进行评价。

该企业的综合评价得分需要您得到该公司授权后，我们将协助您分析给出。

1.2 企业画像类别内容行业空资质增值税一般纳税人产品服务研发；计算机软硬件技术开发、销售、技术咨询1.3 发展历程2工商2.1工商信息2.2工商变更2.3股东结构2.4主要人员2.5分支机构2.6对外投资2.7企业年报2.8股权出质2.9动产抵押2.10司法协助2.11清算2.12注销3投融资3.1融资历史3.2投资事件3.3核心团队3.4企业业务4企业信用4.1企业信用4.2行政许可-工商局4.3行政处罚-信用中国4.4行政处罚-工商局4.5税务评级4.6税务处罚4.7经营异常4.8经营异常-工商局4.9采购不良行为4.10产品抽查4.11产品抽查-工商局4.12欠税公告4.13环保处罚4.14被执行人5司法文书5.1法律诉讼（当事人）5.2法律诉讼（相关人）5.3开庭公告5.4被执行人5.5法院公告5.6破产暂无破产数据6企业资质6.1资质许可6.2人员资质6.3产品许可6.4特殊许可7知识产权7.1商标7.2专利7.3软件著作权7.4作品著作权7.5网站备案7.6应用APP7.7微信公众号8招标中标8.1政府招标8.2政府中标8.3央企招标8.4央企中标9标准9.1国家标准9.2行业标准9.3团体标准9.4地方标准10成果奖励10.1国家奖励10.2省部奖励10.3社会奖励10.4科技成果11土地11.1大块土地出让11.2出让公告11.3土地抵押11.4地块公示11.5大企业购地11.6土地出租11.7土地结果11.8土地转让12基金12.1国家自然基金12.2国家自然基金成果12.3国家社科基金13招聘13.1招聘信息感谢阅读:感谢您耐心地阅读这份企业调查分析报告。

南京禄伯森电子科技有限公司介绍企业发展分析报告模板

Enterprise Development专业品质权威Analysis Report企业发展分析报告南京禄伯森电子科技有限公司免责声明:本报告通过对该企业公开数据进行分析生成，并不完全代表我方对该企业的意见，如有错误请及时联系;本报告出于对企业发展研究目的产生，仅供参考，在任何情况下，使用本报告所引起的一切后果，我方不承担任何责任:本报告不得用于一切商业用途，如需引用或合作，请与我方联系:南京禄伯森电子科技有限公司1企业发展分析结果1.1 企业发展指数得分企业发展指数得分南京禄伯森电子科技有限公司综合得分说明：企业发展指数根据企业规模、企业创新、企业风险、企业活力四个维度对企业发展情况进行评价。

该企业的综合评价得分需要您得到该公司授权后，我们将协助您分析给出。

1.2 企业画像类别内容行业空资质空产品服务硬件、电子产品技术开发、销售、技术咨询、技1.3 发展历程2工商2.1工商信息2.2工商变更2.3股东结构2.4主要人员2.5分支机构2.6对外投资2.7企业年报2.8股权出质2.9动产抵押2.10司法协助2.11清算2.12注销3投融资3.1融资历史3.2投资事件3.3核心团队3.4企业业务4企业信用4.1企业信用4.2行政许可-工商局4.3行政处罚-信用中国4.5税务评级4.6税务处罚4.7经营异常4.8经营异常-工商局4.9采购不良行为4.10产品抽查4.12欠税公告4.13环保处罚4.14被执行人5司法文书5.1法律诉讼（当事人）5.2法律诉讼（相关人）5.3开庭公告5.4被执行人5.5法院公告5.6破产暂无破产数据6企业资质6.1资质许可6.2人员资质6.3产品许可6.4特殊许可7知识产权7.1商标7.2专利7.3软件著作权7.4作品著作权7.5网站备案7.6应用APP7.7微信公众号8招标中标8.1政府招标8.2政府中标8.3央企招标8.4央企中标9标准9.1国家标准9.2行业标准9.3团体标准9.4地方标准10成果奖励10.1国家奖励10.2省部奖励10.3社会奖励10.4科技成果11 土地11.1大块土地出让11.2出让公告11.3土地抵押11.4地块公示11.5大企业购地11.6土地出租11.7土地结果11.8土地转让12基金12.1国家自然基金12.2国家自然基金成果12.3国家社科基金13招聘13.1招聘信息感谢阅读:感谢您耐心地阅读这份企业调查分析报告。