PS2562L-1-F4中文资料

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PA2561L1-1(NEC)光耦规格书

DATA SHEETThe information in this document is subject to change without notice.©1992Document No. P12989EJ4V0DS00 (4th edition)(Previous No. LC-2225)Date Published August 1997 NS Printed in JapanPHOTOCOUPLERPS2561-1,-2, PS2561L-1,-2HIGH ISOLATION VOLTAGE SINGLE TRANSISTOR TYPE MULTI PHOTOCOUPLER SERIESThe mark shows major revised points.DESCRIPTIONThe PS2561-1, -2 and PS2561L-1, -2 are optically coupled isolators containing a GaAs light emitting diode and an NPN silicon phototransistor.PS2561-1, -2 are in a plastic DIP (Dual In-line Package) and PS2561L-1, -2 are lead bending type (Gull-wing) for surface mount.FEATURES•High isolation voltageBV = 5 000 Vr.m.s.: standard productsBV = 3 750 Vr.m.s.: VDE0884 approved products (Option)•High collector to emitter voltage (V CEO = 80 V)•High current transfer ratio (CTR = 200 % TYP.)•High-speed switching (t r = 3 µs TYP., t f = 5 µs TYP.)•UL approved (File No. E72422 (S) )•CSA approved (No. CA 101391)•BSI approved (BS415, BS7002) No. 7112•SEMKO approved (SS4410165) No. 9317144•NEMKO approved (NEK-HD 195S6) No. A21409•DEMKO approved (Section 101, 137) No. 300535•FIMKO approved (E69-89) No. 167265-08•VDE0884 approved (Option)APPLICATIONS•Power supply •Telephone/FAX.•FA/OA equipment•Programmable logic controller2PACKAGE DIMENSIONS (in millimeters)DIP Type5.1 MAX.6.53.8M A X .4.55M A X .2.8M I N .0.652.547.620.50 ± 0.100.25M4312PS2561-1 (New Package)10.2 MAX.1.25±0.156.53.8M A X .4.55M A X .2.8M I N .0.652.547.620.50 ± 0.100.25M871265340 to 15˚PS2561-20 to 15˚PS2561-14.6 ± 0.351.25±0.156.53.8M A X .4.55M A X .2.8M I N .0.650.50 ± 0.100.25M0 to 15˚7.622.5443121.25±0.15PS2561L1-15.1 MAX.6.53.8M A X .4.25M A X .2.8M I N .0.352.547.620.50 ± 0.100.25M0 to 15˚43121.25±0.1510.161. Anode 2. Cathode 3. Emitter 4. Collector 1, 3. Anode 2, 4. Cathode 5, 7. Emitter 6, 8. Collector1. Anode2. Cathode3. Emitter4. Collector 1. Anode 2. Cathode 3. Emitter 4. Collector Caution New package 1ch only3Lead Bending Type5.1 MAX.6.53.8M A X .2.547.620.25M4312PS2561L-1 (New Package)10.2 MAX.1.25±0.156.53.8M A X .2.547.6287126534PS2561L-2PS2561L-14.6 ± 0.351.25±0.156.53.8M A X .0.25M7.622.5443121.25±0.150.05 t o 0.29.60 ± 0.40.90 ± 0.250.05 t o 0.29.60 ± 0.40.90 ± 0.250.25M0.05 t o 0.29.60 ± 0.40.90 ± 0.255.1 MAX.6.53.8M A X .2.547.620.25MPS2561L2-143121.25±0.150.05 t o 0.210.160.9 ± 0.2512.0 MAX.1. Anode2. Cathode3. Emitter4. Collector1, 3. Anode 2, 4. Cathode 5, 7. Emitter 6, 8. Collector 1. Anode 2. Cathode 3. Emitter 4. Collector 1. Anode 2. Cathode 3. Emitter 4. Collector Caution New package 1ch only4ORDERING INFORMATIONPart NumberPackageSafety Standard ApprovalApplication partnumber *1PS2561-1PS2561L-1PS2561L1-1PS2561L2-14-pin DIP4-pin DIP (lead bending surface mount)4-pin DIP (for long distance)4-pin DIP (for long distance surfacemount)Standard products PS2561-1PS2561-2PS2561L-28-pin DIP8-pin DIP (lead bending surface mount)PS2561-2PS2561-1-V PS2561L-1-V PS2561L1-1-V PS2561L2-1-V 4-pin DIP4-pin DIP (lead bending surface mount)4-pin DIP (for long distance)4-pin DIP (for long distance surfacemount)VDE0884 approved products (Option)PS2561-1PS2561-2-V PS2561L-2-V8-pin DIP8-pin DIP (lead bending surface mount)PS2561-2*1 As applying to Safety Standard, following part number should be used.ABSOLUTE MAXIMUM RATINGS (T A = 25 °C, unless otherwise specified)ParameterSymbolRatingsUnitPS2561-1,PS2561L-1PS2561-2,PS2561L-2DiodeReverse Voltage V R 6V Forward Current (DC)I F80mAPower Dissipation Derating ∆P D /°C 1.5 1.2mW/°C Power Dissipation P D 150120mW/ch Peak Forward Current*1I FP 1A TransistorCollector to Emitter Voltage V CEO 80V Emitter to Collector Voltage V ECO 7V Collector CurrentI C50mA/chPower Dissipation Derating ∆P C /°C 1.5 1.2mW/°C Power DissipationP C 150120mW/ch Isolation Voltage*2BV5 0003 750*3Vr.m.s.Operating Ambient Temperature T A –55 to +100°C Storage TemperatureT stg–55 to +150°C*1PW = 100 µs, Duty Cycle = 1 %*2AC voltage for 1 minute at T A = 25 °C, RH = 60 % between input and output *3VDE0884 approved products (Option)•UL approved •CSA approved •BSI approved•NEMKO approved •DEMKO approved •SEMKO approved•FIMKO approved5ELECTRICAL CHARACTERISTICS (T A = 25 °C)ParameterSymbol Conditions MIN.TYP.MAX.Unit DiodeForward Voltage V F I F = 10 mA 1.171.4VReverse Current I R V R = 5 V5µA Terminal CapacitanceC t V = 0 V, f = 1.0 MHz 50pFTransistorCollector to Emitter Dark CurrentI CEOV CE = 80 V, I F = 0 mA100nACoupled Current Transfer Ratio *1CTR I F = 5 mA, V CE = 5 V 80200400%Collector Saturation VoltageV CE (sat)I F = 10 mA, I C = 2 mA0.3V Isolation Resistance R I-O V I-O = 1.0 kV 1011ΩIsolation Capacitance C I-O V = 0 V, f = 1.0 MHz0.5pFRise Time *2t r V CC = 10 V, I C = 2 mA, R L = 100 Ω3µsFall Time*2t f5*1CTR rank (only PS2561-1, PS2561L-1)*2Test circuit for switching timeL: 200 to 400 (%)M : 80 to 240 (%)D : 100 to 300 (%)H : 80 to 160 (%)W : 130 to 260 (%)V CCV OUTR L = 100 Ω50 ΩI F µPulse InputPW = 100 sDuty Cycle = 1/106TYPICAL CHARACTERISTICS (T A = 25 °C, unless otherwise specified)150100500255075100125150 1.5 mW/˚C1.2 mW/˚C15010050255075100125150010 0001001 000100101755025–25–50V CE = 80 V10 1.00.80.60.40.20510.50.110 m A401.5 mW/˚C1.2 mW/˚C20 m A 50 m A 2 m AI F = 1 mA5 m A 70260504030201004681020 m A I F = 5 mA10m A 50 m A 40 V 24 V 10 V 5 VPS2561-1PS2561L-1PS2561-2PS2561L-2PS2561-1PS2561L-1PS2561-2PS2561L-2100 1.51.41.31.21.11.00.90.80.75010510.50.10 ˚C –25 ˚C –55 ˚C+60 ˚C +25 ˚CT A = +100 ˚CD i o d e P o w e r D i s s i p a t i o n P D (m W )T r a n s i s t o r P o w e r D i s s i p a t i o n P C (m W )Ambient Temperature T A (˚C)F o r w a r d C u r r e n t I F (m A )Forward Voltage V F (V)C o l l e c t o r C u r r e n t I C (m A )Collector to Emitter Voltage V CE (V)C o l l e c t o r t o E m i t t e rD a r k C u r r e n t I CE O (n A )Collector Saturation Voltage V CE(sat) (V)Ambient Temperature T A (˚C)Ambient Temperature T A (˚C)DIODE POWER DISSIPATION vs.AMBIENT TEMPERATURETRANSISTOR POWER DISSIPATION vs. AMBIENT TEMPERATUREFORWARD CURRENT vs.FORWARD VOLTAGECOLLECTOR CURRENT vs.COLLECTOR TO EMITTER VOLTAGECOLLECTOR TO EMITTER DARKCURRENT vs. AMBIENT TEMPERATURECOLLECTOR CURRENT vs.COLLECTOR SATURATION VOLTAGEC o l l e c t o r C u r r e n t I C (m A )7PS2561-1,-2,PS2561L-1,-21.2–501.00.80.60.40.20–252550751004504003503002502001501005000.050.10.5151050501010.110 k5 k 1 k50010050101 000100101100 k50 k 10 k5 k 1 k5001000–5–10–15–200.5125102050100200500I C = 2 mA,V CC = 10 V,CTR = 290 %t f t rt dt sI F = 5 mA,V CC = 5 V,CTR = 290 %t st dt rt fI F = 5 mA,V CE = 5 V100 Ω300 ΩR L = 1 k ΩI F = 5 mA T A = 25 ˚CI F = 5 mA T A = 60 ˚C 1.21.00.80.60.40.2102103104105Normalized to 1.0at T A = 25 ˚C,I F = 5 mA, V CE = 5 VForward Current I F (mA)Ambient Temperature T A (˚C)Load Resistance R L (Ω)Frequency f (kHz)N o r m a l i z e d C u r r e n t T r a n s f e r R a t i o C T RC u r r e n t T r a n s f e r R a t i o C T R (%)N o r m a l i z e d G a i n G VLoad Resistance R L (Ω)S w i t c h i n g T i m e t ( s )µNORMALIZED CURRENT TRANSFER RATIO vs. AMBIENT TEMPERATURECURRENT TRANSFER RATIO vs.FORWARD CURRENTSWITCHING TIME vs.LOAD RESISTANCESWITCHING TIME vs.LOAD RESISTANCEFREQUENCY RESPONSELONG TIME CTR DEGRADATIONS w i t c h i n g T i m e t ( s )µTYP.Time (Hr)C T R (R e l a t i v e V a l u e )8TAPING SPECIFICATIONS (in millimeters)Taping DirectionPS2561L-1-E3PS2561L-1-F3PS2561L-1-E4PS2561L-1-F4Outline and Dimensions (Tape)1.55±0.12.0±0.14.0±0.11.55±0.11.75±0.14.3±0.210.3±0.10.37.5±0.116.0±0.35.6±0.18.0±0.1Outline and Dimensions (Reel)Packing: PS2561L-1-E3, E4 1 000 pcs/reel2.0±0.5R 1.013.0±0.5φ21.0±0.8φ16.4+2.0–0.0P S 2561L -1-E 3, E 4: 250P S 2561L -1-F 3, F 4: 330φ80.0±5.0φφPS2561L-1-F3, F4 2 000 pcs/reel9Taping DirectionPS2561L-2-E3PS2561L-2-E4Outline and Dimensions (Tape)1.55±0.12.0±0.14.0±0.11.55±0.11.75±0.14.3±0.210.3±0.10.37.5±0.116.0±0.310.4±0.112.0±0.1Outline and Dimensions (Reel)Packing: 1 000 pcs/reel16.4+2.0–0.080.0±5.0φ330φ2.0±0.5R 1.013.0±0.5φ21.0±0.8φ10RECOMMENDED SOLDERING CONDITIONS(1) Infrared reflow soldering • Peak reflow temperature235 °C (package surface temperature)• Time of temperature higher than 210 °C 30 seconds or less • Number of reflows Three• FluxRosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt % is recommended.)60 to 90 s (preheating)210 ˚C120 to 160 ˚CP a c k a g e S u r f a c e T e m p e r a t u r e T (˚C )Time (s)(heating)to 10 sto 30 s235 ˚C (peak temperature)Recommended Temperature Profile of Infrared ReflowPeak temperature 235 ˚C or belowCaution Please avoid to removed the residual flux by water after the first reflow processes.(2) Dip soldering • Temperature 260 °C or below (molten solder temperature)• Time10 seconds or less • Number of times One• FluxRosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt % is recommended.)11SPECIFICATION OF VDE MARKS LICENSE DOCUMENT (VDE0884)ParameterSymbolSpeckUnitApplication classification (DIN VDE 0109)for rated line voltages ≤ 300 Vr.m.s.for rated line voltages ≤ 600 Vr.m.s.IV III Climatic test class (DIN IEC 68 Teil 1/09.80)55/100/21Dielectric strength maximum operating isolation voltageTest voltage (partial discharge test procedure a for type test and random test)U pr = 1.2 × U IORM , P d < 5 pCU IORM U pr 8901 068V peak V peakTest voltage (partial discharge test procedure b for random test)U pr = 1.6 × U IORM , P d < 5 pC U pr 1 424V peakHighest permissible overvoltage U TR 6 000V peakDegree of pollution (DIN VDE 0109)2Clearance distance > 7.0mm Creepage distance> 7.0mmComparative tracking index (DIN IEC 112/VDE 0303 part 1)CTI 175Material group (DIN VDE 0109)III a Storage temperature range T stg –55 to +150°C Operating temperature rangeT A –55 to +100°C Isolation resistance, minimum value V IO = 500 V dc at T A = 25 °CV IO = 500 V dc at T A MAX. at least 100 °CRis MIN.Ris MIN.10121011ΩΩSafety maximum ratings (maximum permissible in case of fault, see thermal derating curve)Package temperatureCurrent (input current I F , Psi = 0)Power (output or total power dissipation)Isolation resistanceV IO = 500 V dc at T A = 175 °C (Tsi)Tsi Isi Psi Ris MIN.175********9°C mA mW ΩCAUTIONWithin this device there exists GaAs (Gallium Arsenide) material which is aharmful substance if ingested. Please do not under any circumstances break thehermetic seal.No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document.NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others.While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features.NEC devices are classified into the following three quality grades:"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application.Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronicequipment and industrial robotsSpecial: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designedfor life support)Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc.The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance.Anti-radioactive design is not implemented in this product.M4 96. 5。

24lc256系列中文

1.8-5.5V 400 kHz (2) 2.5-5.5V 400 kHz 1.8-5.5V 400 kHz(2) 2.5-5.5V 400 kHz 4.5V-5.5V 400 kHz
8 字节
16 字节 16 字节
整个阵列
整个阵列无
无
A0, A1, A2 A0, A1, A2
I I, E
I I C, I, E
装。
封装类型（1）
PDIP/SOIC
TSSOP/MSOP（2）
A0 1 A1 2 A2 3 VSS 4
8 VCC
A0 1
7 WP(3) A1 2
6 SCL
A2 3
5 SDA VSS 4
8 VCC
A0 A1
7 WP(3) NC NC
6 SCL NC
5
SDA
A2 VSS
TSSOP
1
14
2
13
3
12
4
11
1.8-5.5V 2.5-5.5V 1.8-5.5V
400 kHz (2)
400 kHz 1 MHz(3)
64 字节
整个阵列
A0, A1, A2(4)
I
P, SN, SM, ST, MS, MF,
I, E ST14
I
256 千位器件
24AA256
1.8-5.5V 400 kHz (2)
24LC256 24FC256
2005 Microchip Technology Inc.
DS21930A_CN 第 3 页
24AAXX/24LCXX/24FCXX
2.0 电气特性
绝对最大额定值 (†)
VCC.............................................................................................................................................................................6.5V 相对于 Vss 的所有输入和输出 ............................................................................................................ -0.6V 到 VCC +1.0V 存储温度 ................................................................................................................................................. -65°C 到 +150°C 环境温度（使用电源时）........................................................................................................................ -40°C 到 +125°C 所有引脚静电保护 ....................................................................................................................................................................≥ 4 kV

PSoC 62 数据手册说明书

■ 1 MB 应用闪存，32 KB EEPROM 区域和 32 KB 监控闪存
■ 6 个过压容限 (OVT) 引脚
■ 128 位宽闪存访问降低功耗
封装
■ SRAM 具有可选择的保留粒度
■ 124-BGA (评定中)
■ 288 KB 集成 SRAM
■ 80-WLCSP
■ 32 KB 保留边界 (可以保留 32K 到 288K，增量为 32K)
■ 锁相环 (PLL)，用于倍增时钟频率 ■ 8 MHz 内部主振荡器 (IMO)，精度为2％ ■ 超低功耗 32-kHz 内部低速振荡器 (ILO)，精度为±10％ ■ 频率锁定环 (FLL)，用于倍增 IMO 频率
串行通信 ■ 九个独立的运行时可重配置串行通信模块 (SCB)，每个都可以
软件配置为 I2C，SPI 或 UART
■ 提供具有 Smart_IO 块的两个端口，能力; 这些在深度睡眠期间可用
■ 安全引导不间断，直到系统保护属性建立 ■ 在引导期间使用硬件散列 (Hashing) 进行身份验证 ■ 逐步验证执行映像
电容式感应
■ 在受保护程序的只执行模式下安全执行代码
■ 赛普拉斯 CapSense Sigma-Delta (CSD) 提供一流的 SNR，液体容差和接近感应
■ 12 位 1 Msps 的 SAR ADC 包括差分模式、单端模式和具有信 ■ 集成开发环境提供原理图设计输入和构建 (具有模拟和数字自动
号求平均功能的 16 通道序列发生器。
路由) 和代码开发和调试功能
■ 一个 12 位电压模式 DAC，稳定时间小于 5μs
■ 应用编程接口 (API) 可用于所有固定功能和可编程的外设
特性
32位双核CPU子系统 ■ 具有单周期倍频的 150-MHz Arm Cortex-M4F CPU (浮点和存

EM640FV16F系列256Kx16位超低功耗低电压全CMOS静态RAM产品说明书

Document Title256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAMRevision HistoryRevision No. History Date Remark0.0-.Initial Draft May262003Preliminary0.1-.Add Pb-free part number Feb.1320040.2-.I SB1(Max.) changed from 12uA to 6uA.Mar.3120080.3-.Add 45ns part specification.Apr.22009-.I SB1(Typ.) changed from 1uA to 0.25uA.-.I SB1(Max.) changed from 6uA to 4uA.-.Memory Function Guide updated in the last page.Apr.72009Release1.0-.EM640FV16F(KGD), EM640FV16F series & EM640FV16FUseries are unified to EM640FV16F Family.Emerging Memory & Logic Solutions Inc.3F Korea Construction Financial Cooperative B/D, 301-1 Yeon-Dong, Jeju-Si, Jeju-Do, Rep.of Korea Zip Code : 690-717Tel : +82-64-740-1700 Fax : +82-64-740-1750 / Homepage : The attached datasheets are provided by EMLSI reserve the right to change the specifications and products. EMLSI will answer to your questions about device. If you have any questions, please contact the EMLSI office.PRODUCT FAMILY1. “xx” represents speed.2. Typical values are measured at Vcc=3.3V, T A =25o C and not 100% tested.Product FamilyOperating Temperature Vcc RangeSpeedPower DissipationPKG Type Standby (I SB1, Typ.)Operating (I CC1.Max.)EM640FV16F Industrial (-40 ~ 85o C)2.7 ~3.6 V 45/55/70 ns0.25 µA 2)3 mAKGDEM640FV16F - xx 1)LF VFBGA-48 EM640FV16FU - xx 1)LF44-TSOP2FEATURES•Process Technology : 0.18µm Full CMOS •Organization : 256K x 16 bit•Power Supply Voltage : 2.7V ~ 3.6V •Low Data Retention Voltage : 1.5V(Min.)•Three state output and TTL Compatible •Package Type : VFBGA-48, 44-TSOP2GENERAL DESCRIPTIONThe EM640FV16F families are fabricated by EMLSI’s advanced full CMOS process technology. The families support industrial temperature range and Chip Scale Package for user flexibility of system design. The families also supports low data retention voltage for battery back-up operation with low data retention current.R o w S e l e c tI/O Circuit Column SelectData ContData ContPre-charge CircuitMemory Array 2048 x 2048A1A2A3A4A5A6A7A0A8A9A11A12A13A14A15A16A17WE OE UB LB CS1DQ0 ~ DQ7DQ8 ~ DQ15VCCVSSControl LogicA10FUNCTIONAL BLOCK DIAGRAMCS2PIN DESCRIPTIONName FunctionName FunctionCS1, CS2Chip Select inputs V CC Power Supply OE Output Enable input V SS GroundWE Write Enable input UB Upper Byte (DQ8~DQ15)A0~A17 Address inputs LB Lower Byte (DQ0~DQ7)DQ0~DQ15Data inputs/outputsNCNo ConnectionPIN CONFIGURATIONSVFBGA-48 : Top view(ball down)123456A LB OE A0A1A2CS2B DQ8UB A3A4CS1DQ0C DQ9DQ10A5A6DQ1DQ2D VSS DQ11A17A7DQ3VCCE VCC DQ12 NC A16DQ4VSSF DQ14DQ13A14A15DQ5DQ6G DQ15NC A12A13WE DQ7HNCA8A9A10A11NC1234567891011121314151644434241403938373635343332313029A4A3A2A1A0CS1DQ0DQ1DQ2DQ3VCC VSS DQ4DQ5DQ6DQ7A5A6A7OE UB LB DQ15DQ14DQ13DQ12VSS VCC DQ11DQ10DQ9DQ844 - TSOP2171819202122282726252423WE A17A16A15A14A13CS2A8A9A10A11A1244 - TSOP2 : Top viewABSOLUTE MAXIMUM RATINGS 1)1. Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. Functional operation should be restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended periods may affect reliability.FUNCTIONAL DESCRIPTIONNOTE : X means don’t care. (Must be low or high state)ParameterSymbol Ratings Unit Voltage on Any Pin Relative to Vss V IN , V OUT-0.2 to 4.0V Voltage on Vcc supply relative to Vss V CC -0.2 to 4.0V Power Dissipation P D 1.0WOperating TemperatureT A-40 to 85oCCS1CS2OE WE LB UB DQ0~7DQ8~15Mode Power H X X X X X High-Z High-Z Deselected Stand by X L X X X X High-Z High-Z Deselected Stand by X X X X H H High-Z High-Z Deselected Stand by L H H H L X High-Z High-Z Output Disabled Active L H H H X L High-Z High-Z Output Disabled Active L H L H L H Data Out High-Z Lower Byte Read Active L H L H H L High-Z Data Out Upper Byte Read Active L H L H L L Data Out Data Out Word Read Active L H X L L H Data In High-Z Lower Byte Write Active L H X L H L High-Z Data In Upper Byte Write Active LHXLLLData InData InWord WriteActiveRECOMMENDED DC OPERATING CONDITIONS 1)1. TA= -40 to 85o C, otherwise specified2. Overshoot: VCC +2.0 V in case of pulse width < 20ns3. Undershoot: -2.0 V in case of pulse width < 20ns4. Overshoot and undershoot are sampled, not 100% tested.CAPACITANCE 1) (f =1MHz, T A =25o C)1. Capacitance is sampled, not 100% tested.DC AND OPERATING CHARACTERISTICS1. Typical values are measured at Vcc=3.3V, T A =25o C and not 100% tested.ParameterSymbol Min Typ Max Unit Supply voltage V CC 2.7 3.3 3.6V GroundV SS 000V Input high voltage V IH 2.2 -V CC + 0.22)V Input low voltageV IL-0.23)-0.6VItemSymbol Test ConditionMin Max Unit Input capacitance C IN V IN =0V -8pF Input/Ouput capacitanceC IOV IO =0V-10pFParameterSymbol Test Conditions Min Typ Max Unit Input leakage current I LI V IN =V SS to V CC-1-1µA Output leakage current I LO CS 1=V IH or CS 2=V IL or OE=V IH or WE=V IL or LB=UB=V IH V IO =V SS to V CC-1-1µA Operating power supplyI CC I IO =0mA, CS 1=V IL , CS 2=WE=V IH , V IN =V IH or V IL --3mA Average operating currentI CC1Cycle time=1µs, 100% duty, I IO =0mA,CS 1<0.2V, LB<0.2V or/and UB<0.2V, CS 2>V CC -0.2V, V IN <0.2V or V IN >V CC -0.2V--3mAI CC2Cycle time = Min, I IO =0mA, 100% duty,CS 1=V IL , CS 2=V IH, LB=V IL or/and UB=V IL , V IN =V IL or V IH 45ns --35mA55ns --3070ns--25 Output low voltage V OL I OL = 2.1mA--0.4V Output high voltage V OH I OH = -1.0mA2.4--V Standby Current (TTL)I SBCS 1=V IH , CS 2=V IL , Other inputs=V IH or V IL --0.3mAStandby Current (CMOS)I SB1CS 1>V CC -0.2V, CS 2>V CC -0.2V (CS 1 controlled) or 0V<CS 2<0.2V (CS 2 controlled), Other inputs = 0~V CC(Typ. condition : V CC =3.3V @ 25oC) (Max. condition : V CC =3.6V @ 85o C)LL LF-0.25 1)4µAAC OPERATING CONDITIONSTest Conditions (Test Load and Test Input/Output Reference)Input Pulse Level : 0.4 to 2.2V Input Rise and Fall Time : 5nsInput and Output reference Voltage : 1.5VOutput Load (See right) : CL 1) = 100pF+ 1 TTL(70ns) CL 1) = 30pF + 1 TTL(45ns/55ns)1. Including scope and Jig capacitance2. R 1=3070Ω, R 2=3150Ω3. V TM =2.8V4. CL = 5pF + 1 TTL (measurement with tLZ, tOLZ, tHZ, tOHZ, tWHZ)READ CYCLE (V cc =2.7 to 3.6V, Gnd = 0V, T A = -40o C to +85o C)WRITE CYCLE (V cc =2.7 to 3.6V, Gnd = 0V, T A = -40o C to +85o C)ParameterSymbol45ns 55ns70nsUnitMin Max Min Max Min Max Read cycle time t RC 45-55-70-ns Address access time t AA -45-55-70ns Chip select to output t CO1, t CO2-45-55-70ns Output enable to valid output t OE -20-25-35ns UB, LB acess time t BA 45 55 70ns Chip select to low-Z output t LZ1, t LZ210-10-10-ns UB, LB enable to low-Z output t BLZ 5-5-5-ns Output enable to low-Z output t OLZ 5-5-5-ns Chip disable to high-Z output t HZ1, t HZ2020020025ns UB, LB disable to high-Z output t BHZ 020020025ns Output disable to high-Z output t OHZ 020020025ns Output hold from address changet OH10-10-10-nsParameterSymbol45ns 55ns70nsUnitMin Max Min Max Min Max Write cycle timet WC 45-55-70-ns Chip select to end of write t CW1, t CW235-45-60-ns Address setup time t AS 0-0-0-ns Address valid to end of write t AW 35-45-60-ns UB, LB valid to end of write t BW 35-45-60-ns Write pulse width t WP 35-40-55-ns Write recovery time t WR 0-0-0-ns Write to ouput high-Z t WHZ 0202025nsData to write time overlap t DW 25 25 30 ns Data hold from write time t DH 0-0-0-ns End write to output low-Zt OW5-5-5-nsCL 1)V TM 3)R 12)R 22)TIMING WAVEFORM OF READ CYCLE(2) (WE = V IH )t RCAddresst AA Data Validt OHPrevious Data ValidTIMING WAVEFORM OF READ CYCLE(1) (Address Controlled, CS=OE=V IL , WE=V IH, UB or/and LB =V IL )Data OutTIMING DIAGRAMSNOTES (READ CYCLE)1. t HZ1,2 and t OHZ are defined as the outputs achieve the open circuit conditions and are not referenced to output voltage levels.2. At any given temperature and voltage condition, t HZ1,2(Max.) is less than t LZ1,2(Min.) both for a given device and from device to device interconnection.t RCAddressCS1CS2UB,LBOEData Outt CO1,2t OHt BAt OEHigh-Zt BHZt OHZData Validt OLZt BLZ t LZ1,2t AAt HZ1,2TIMING WAVEFORM OF WRITE CYCLE(1)(WE Controlled)TIMING WAVEFORM OF WRITE CYCLE(2) (CS1 Controlled)t WC AddressCS1 CS2 UB,LB WE Data in Data outt CW1(2)t WR(4)t AWt BWt WP(1)t DW t DH tAS(3)High-Z High-ZData Validt WR(4)t WCAddressCS1CS2 UB,LB WE Data in Data outt CW1,2(2)t AWt BWt WP(1)t AS(3)High-Zt DW t DHHigh-Zt OWt WHZData UndefinedData ValidTIMING WAVEFORM OF WRITE CYCLE(3)(CS2 Controlled)t WC AddressCS1CS2 WE Data in Data outt CW2(2)t WR(4)t AWt WP(1)t DW t DH High-Z High-ZData Validt AS(3)TIMING WAVEFORM OF WRITE CYCLE(4) (UB, LB Controlled)NOTES (WRITE CYCLE)1. A write occurs during the overlap(t WP ) of low CS1 a high CS2 and low WE. A write begins at the lastest transition among CS1 goes low, CS2 goes high and WE goes low. A write ends at the earliest transition when CS1 goes high, CS2 goes high and WE goes high. The t WP is measured from the beginning of write to the end of write.2. t CW is measured from the CS1 going low to end of write.3. t AS is measured from the address valid to the beginning of write.4. t WR is measured from the end or write to the address change. t WR applied in case a write ends as CS1 or WE going high.t WCAddressCS1CS2UB,LBWEData in Data outt CW1,2(2)t WR (4)t AW t BWt WP (1)t DWt DHHigh-ZHigh-ZData Validt AS (3)DATA RETENTION CHARACTERISTICSNOTES1. See the I SB1 measurement condition of datasheet page 5.2. Typical values are measured at T A =25o C and not 100% tested.ParameterSymbolTest ConditionMinTyp 2)MaxUnitV CC for Data Retention V DR I SB1 Test Condition (Chip Disabled) 1)1.5- 3.6V Data Retention CurrentI DR V CC =1.5V, I SB1 Test Condition (Chip Disabled) 1)-0.5-µAChip Deselect to Data Retention Time t SDR See data retention wave form0--nsOperation Recovery Timet RDRt RC--DATA RETENTION WAVE FORMt SDRt RDRData Retention ModeCS1 > Vcc-0.2VV cc 2.7V2.2V V DRCS1, LB / UBGNDt SDRt RDRData Retention ModeV cc 2.7V CS2V DR 0.4V GNDCS2 < 0.2VPACKAGE DIMENSION44 - TSOP2 (0.8mm pin pitch)Unit : millimeters / inchesAB CD E F G H654321DVFBGA 48 BALLS (6X7X1 0.75mm ball pitch)M Min.NOR.Max.A ---1A10.220.32A20.21 REF A30.45 REF b 0.32 5.250.42D 6 BSCE 7 BSC e 0.75 BSC D10.35 BSC E15.25 BSCNOTES.1). DIMENSION b IS MEASURED AT THE MAXIMUM SOLDER BALL DIAMETER, PARALLEL TO DATUM PLANE Z.2). DATUM Z (SEATING PLANE) IS DEFINED BY THE SPHERICAL CROWNS OF THE SOLDER BALLS.3). PARALLELISM MESUREMENT SHALL EXCLUDE ANY EFFECT OF MARK ON TOP SURFACE OF PACKAGE.DETAIL KA1 CORNERUnit: millimetersA1 CORNERXE Y0.1 ZE17X ee/2e/25X eD148X b 1)0.15 M Z X Y 0.08 M ZDETAIL KM0.08 ZZ0.1 ZAA1(A2)(A3)SEATING PLANE2)3)MEMORY FUNCTION GUIDE1. Memory Component8. VersionBlank---------------Mother die2. Device Type A ---------------2 nd generation 6---------------Low Power SRAM B ---------------3 rd generation 7---------------STRAM C ---------------4 th generation C ---------------CellularRAM D ---------------5 th generation E ---------------6 th generation3. Density F ---------------7 th generation 1--------------- 1MG ---------------8 th generation 2--------------- 2M 4--------------- 4M 9. Package8--------------- 8M Blank---------------KGD, FBGA 16--------------- 16M S ---------------32 sTSOP132--------------- 32M T ---------------32 TSOP164--------------- 64M U ---------------44 TSOP228---------------128MV ---------------32 SOP 4. Option 10. Speed 0---------------Dual CS 45--------------- 45ns 1---------------Single CS 55--------------- 55ns 60--------------- 60ns 5. Technology 70--------------- 70ns F ---------------Full CMOS 85--------------- 85ns 90--------------- 90ns 6. Operating Voltage 10---------------100ns T ---------------5.0V 12---------------120nsV ---------------3.3V U ---------------3.0V 11. Power S ---------------2.5V LL ---------------Low Low PowerR ---------------2.0V LF ---------------Low Low Power(Pb-free & Green)P ---------------1.8V L ---------------Low PowerS ---------------Standard Power7. Organization 8--------------- X8 bit 16---------------X16 bit 32---------------X32 bitEMX XX XXX XX XX -XX XX1. EMLSI Memory2. Device Type 11. Power3. Density 10. Speed4. Function 9. Package5. Technology 8. Version6. Operating Voltage7. Organization。

富士通 PRIMERGY RX2530 M4 两路 1U 机架式服务器数据手册

数据手册富士通PRIMERGY RX2530 M4两路1U 机架式服务器数据手册富士通PRIMERGY RX2530 M4 两路1U 机架式服务器在1U 外壳中实现最大生产率富士通PRIMERGY 服务器将为您提供应对任何工作负载以及不断变化的业务要求所需的服务器。

随着业务过程的扩张，对于应用的需求也不断提高。

每个业务过程都有各自的资源足迹，因此您需要寻求一种方式优化计算，以便更好地服务用户。

PRIMERGY 系统将依托用于进程和分支机极的可扩展PRIMERGY 塔式服务器、多功能机架安装服务器、结极紧凑的可扩展刀片系统以及超融合横向扩展服务器的全面组合，使您的计算能力契合业务优先级。

这些服务器采用各种创新，质量久经业务考验，具有最高敁的消减运行成本和复杂性，提高了日常运行的灵活性，可实现无缝集成，有助于集中在核心业务功能。

富士通PRIMERGY RX 机架式服务器作为机架优化的灵活服务器，具有一流的性能和能敁，从而成为各数据中心的“标准”。

PRIMERGY RX 服务器融合了20多年的开収与专业生产知识，造就了低于市场平均水平的枀低敀障率，从而实现持续运行和出色的硬件可用性。

PRIMERGY RX2530 M4富士通PRIMERGY RX2530 M4服务器是一款在节省空间的1U 外壳中提供高性能、可扩展性和能源敁率的机架式服务器。

PRIMERGY RX2530 M4采用最多28核的全新英特尔® 至强®处理器可扩展系列以及最新DDR4内存技术，性能强大，非常适于虚拟化、横向扩展场景、小型数据库以及高性能计算。

此外，RX2530 M4支持高达3,072 GB 主内存，具有强大的可扩展性，幵且支持M.2设备和最新iRMC S5，可适应未来需求，提供下一代服务器管理功能。

自2018年年中开始，将支持NV-DIMM 。

最多10个磁盘和可选的4个高速PCIe SSD 提供灵活的存储配置选择。

EPM2210F256I5N中文资料(Altera)中文数据手册「EasyDatasheet - 矽搜」

100-Pin FineLine
BGA
100-Pin TQFP
0.5
0.5
1
0.5
25
36
121
256
5×5
6×6
11 × 11 16 × 16
144-Pin TQFP
0.5 484 22 × 22
144-Pin Micro FineLine BGA
256-Pin Micro FineLine BGA
参考文献
本章引用文件下列文件：
■ DC和开关特性
在本章
■ MAX II逻辑单元,以宏单元转换方法
MAX II器件手册
白皮书
文档修订历史记录
表1-6 显示修订历史本章.
表 1-6. 文档修订历史记录
日期和修订
所做更改
2009年8月, 1.9版
2008年10月, 1.8版
2007年12月, version1.7
每一个速度等级和密度范围内数字,指是
特点
在本章
MAX II器件手册.
表1-2 显示MAX II器件速度等级产品.
DC和开关
表 1-2. MAX II速度等级
速度等级
器
EPM240 EPM240G EPM570 EPM570G EPM1270 EPM1270G EPM2210 EPM2210G EPM240Z EPM570Z
特征
在MAX II CPLD具有以下特点： ■ 低成本,低功耗CPLD ■ 瞬时上电,非易失体系结构 ■ 待机电流低至25μA
■ 提供快速传播延迟和时钟到输出时间
■ 提供四个全局时钟有两个时钟可以从每个逻辑阵列模块（LAB） ■ UFM方框多达8 Kbits对非易失性存储

PS2625L资料

Document No. P11293EJ3V0DS00 (3rd edition) (Previous No. LC-2125A)Date Published February 1996 P Printed in Japan ©1988PACKAGE DIMENSIONS (Unit: mm)DIP (Dual In-line Package)Lead Bending type (Gull-wing)2ABSOLUTE MAXIMUM RATINGS (T A = 25 ˚C)DiodeForward Current (DC)I F±150mAPower Dissipation Derating∆P D/˚C 2.0mW/˚CPower Dissipation P D200mWPeak Forward Current I F(Peak)±1A(PW = 100 µs, Duty Cycle 1 %)TransistorCollector to Emitter Voltage V CEO80VEmitter to Collector Voltage V ECO7VCollector Current I C50mAPower Dissipation Derating∆P C/˚C 1.5mW/˚CPower Dissipation P C150mWCoupledIsolation Voltage *1)BV 5 000V r.m.s.Storage Temperature T stg–55 to +150˚COperating Temperature T opt–55 to +100˚C*1)AC voltage for 1 minute at T A = 25 ˚C, RH = 60 % between input (Pin No. 1, 2, 3, Common) and output (Pin No.4, 5, 6 Common).ELECTRICAL CHARACTERISTICS (T A = 25 ˚C)34TYPICAL CHARACTERISTICS (T A = 25 ˚C)255075100050100150200T A – Ambient Temperature – ˚C DIODE POWER DISSIPATION VS .AMBIENT TEMPERATUREP D – D i o d e P o w e r D i s s i p a t i o n – m W255075100050100150200T A – Ambient Temperature – ˚C TRANSISTOR POWER DISSIPATION VS .AMBIENT TEMPERATUREP C – T r a n s i s t o r P o w e r D i s s i p a t io n – m W–1.5–150–100–50050100150V F – Forward Voltage – VI F – F o r w a r d C u r r e n t – m AFORWARD CURRENT vs.FORWARD VOLTAGE–1.0–0.500.5 1.0 1.50.60.01FORWARD CURRENT vs.FORWARD VOLTAGEI F –F o r w a r d C u r r e n t – m AV F – Forward Voltage – V0.11101000.81 1.2 1.4 1.6COLLECTOR TO EMITTER DARK CURRENT vs. AMBIENT TEMPERATUREI C E O – C o l l e c t o r t o E m i t t e r D a rk C u r r e n t – n AT A – Ambient Temperature – ˚C1000010001001010.1–60–40–20020406080100V CE(sat) – Collector Saturation Voltage – V1001010.10.01COLLECTOR CURRENT vs.COLLECTOR SATURATION VOLTAGEI C –C o l l e c t o r C u r r e n t – m A0.200.40.610.85NORMALIZED OUTPUT CURRENT vs.AMBIENT TEMPERATURET A – Ambient Temperature – ˚C∆C T R – N o r m a l i z e d O u t p u t C u r r e n tSWITCHING TIME vs.LOAD RESISTANCER L – Load Resistance – Ωt – S w i t c h i n g T i m e – sµf – Frequency – HzA V – V o l t a g e G a i n – d B5000.10.5151050100250200150100CURRENT TRANSFER RATIO (CTR) vs.FORWARD CURRENTIF – Forward Current – mAC T R – C u r r e n t T r a n s f e r R a t i o – %1021031041050.20.40.60.81.0CTR DEGRADATIONTime – Hr∆C T R – N o r m a l i z e dCOLLECTOR CURRENT vs.COLLECTOR TO EMITTER VOLTAGEV CE – Collector to Emitter Voltage – V 10406070I C – C o l l e c t o r C u r r e n t – m A2030505 The measurement of TYPICAL CHARACTERISTICS are only for reference, not guaranteed.6SOLDERING PRECAUTION(1)Infrared reflow soldering• Peak reflow temperature :235 ˚C or below (Plastic surface temperature)• Reflow time:30 seconds or less(Time period during which the plastic surface temperature is 210 ˚C)• Number of reflow processes : Three • Flux:Rosin flux containing small amount of chlorine(The flux with a maximum chlorine content of 0.2 Wt % is recommended.)INFRARED RAY REFLOW TEMPERATURE PROFILEP A C K A G E ’S S U R F A C E T E M (˚C )(2)Dip soldering• Peak temperature :260 ˚C or lower • Time :10 s or less • Flux:Rosin-base flux[MEMO]7CautionThe Great Care must be taken in dealing with the devices in this guide.The reason is that the material of the devices is GaAs (Gallium Arsenide), which isdesignated as harmful substance according to the law concerned.Keep the law concerned and so on, especially in case of removal.No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document.NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others.While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features.NEC devices are classified into the following three quality grades:“Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based ona customer designated “quality assurance program“ for a specific application. The recommended applicationsof a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application.Standard:Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronicequipment and industrial robotsSpecial:Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designedfor life support)Specific:Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc.The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books.If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance.Anti-radioactive design is not implemented in this product.M4 94.11。

2SK2252-01L中文资料(fuji)中文数据手册「EasyDatasheet - 矽搜」

2.5
(ton=td(on) +tr ) 关断时间t off (toff=td(off)+tf) 雪崩能力
二极管的正向导通电压反向恢复时间反向恢复电荷
ns A V ns µC
Tch=25°C IF=2xI DR VGS=0V T ch=25°C IF=IDR VGS=0V -di/dt=100A/µs T ch=25°C
8
热特性
Item
热阻
符
测试条件通道环境通道的情况下
Min.
Typ.
Max.
125 2.5
Units
°C/W °C/W
Rth(ch-a) Rth(ch-c)
1
芯片中文手册,看全文,戳
富士功率MOSFET
特点
典型的输出特性通态电阻与T
2SK2252-01L,S
ch
1.2 20 1.0 15 ID [A] 10
Max.
3.5 500 1.0 100 0.50 1130 200 45 45 45 60 15 1.5
Units
V V µA mA nA Ω S pF
V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf IAV VSD trr Q rr
0
10
1
10
-2 0
10
10
1
10 VDS [V]
2
10
3
3
DS
10
1
250
25
200 10 C [nF]
0
20
V DS [ V ] 150
15 V

PS2805A-1-F4-A中文资料

DESCRIPTIONThe PS2805A-1 and PS2805A-4 are optically coupled isolators containing a GaAs light emitting diode and an NPN silicon phototransistor in a plastic SSOP for high density applications to realize an excellent cost performance. This package has shield effect to cut off ambient light.FEATURES• High isolation voltage (BV = 2 500 Vr.m.s.)• Small and thin package (4, 16-pin SSOP, Pin pitch 1.27 mm) • AC input response• Ordering number of tape product: PS2805A-1-F3, F4, PS2805A-4-F3, F4 • Pb-Free product • Safety standards • UL approved: File No. E72422• DIN EN60747-5-2 (VDE0884 Part2) approved (Option)APPLICATIONS• Programmable logic controllers • OA equipment • Measuring instruments • H ybrid ICThe mark shows major revised points.DATA SHEETThe information in this document is subject to change without notice. Before using this document, please confirm thatthis is the latest version.Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices representative for availability and additional information.Document No. PN10399EJ03V0DS (3rd edition)Date Published March 2006 CP(K) Printed in JapanNEC Compound Semiconductor Devices, Ltd. 2003, 2006PACKAGE DIMENSIONS (UNIT: mm)MARKING EXAMPLE2Data Sheet PN10399EJ03V0DSORDERING INFORMATIONPart Number Order Number Solder PlatingSpecificationPacking StyleSafety StandardsApprovalApplicationPart Number*1PS2805A-1 PS2805A-1-A Pb-Free 50 pcs (Tape 50 pcs cut) Standard products PS2805A-1PS2805A-1-F3 PS2805A-1-F3-A EmbossedTape 3 500 pcs/reel (UL approved)PS2805A-1-F4 PS2805A-1-F4-APS2805A-4 PS2805A-4-A Magazine Case 45 pcs PS2805A-4PS2805A-4-F3 PS2805A-4-F3-A Embossed Tape 2 500 pcs/reelPS2805A-4-F4 PS2805A-4-F4-APS2805A-1-V PS2805A-1-V-A 50 pcs (Tape 50 pcs cut) DIN EN60747-5-2 PS2805A-1PS2805A-1-V-F3 PS2805A-1-V-F3-A EmbossedTape 3 500 pcs/reel (VDE0884 Part2)PS2805A-1-V-F4 PS2805A-1-V-F4-A Approved(Option)PS2805A-4-V PS2805A-4-V-A Magazine Case 45 pcs PS2805A-4PS2805A-4-V-F3 PS2805A-4-V-F3-A Embossed Tape 2 500 pcs/reelPS2805A-4-V-F4 PS2805A-4-V-F4-A*1 For the application of the Safety Standard, following part number should be used.Data Sheet PN10399EJ03V0DS 3ABSOLUTE MAXIMUM RATINGS (T A = 25°C, unless otherwise specified)UnitRatingsParameter SymbolPS2805A-1 PS2805A-4Diode Forward Current (DC) I F±30 mA/chPower Dissipation Derating ∆P D/°C 0.6 0.8 mW/°CPowerDissipation P D 60 80 mW/chPeak Forward Current*1I FP±0.5 A/chTransistor Collector to Emitter Voltage V CEO 70 VEmitter to Collector Voltage V ECO 5 VCurrent I C 30 mA/chCollectorPower Dissipation Derating ∆P C/°C 1.2 mW/°CPowerDissipation P C 120 mW/chVr.m.s.500Isolation Voltage*2 BV2Operating Ambient Temperature T A−55 to +100 °CStorage Temperature T stg−55 to +150 °C*1PW = 100 µs, Duty Cycle = 1%*2AC voltage for 1 minute at T A = 25°C, RH = 60% between input and outputPins 1-2 shorted together, 3-4 shorted together (PS2805A-1).Pins 1-8 shorted together, 9-16 shorted together (PS2805A-4).4Data Sheet PN10399EJ03V0DSELECTRICAL CHARACTERISTICS (T A = 25°C, unless otherwise specified)Parameter Symbol Conditions MIN.TYP.MAX.Unit Diode ForwardVoltage V F I F = ±5 mA 1.2 1.4 VTerminalCapacitanceC t V = 0 V, f = 1.0 MHz 20pFTransistor Collector to Emitter DarkCurrentI CEO V CE = 70 V, I F = 0 mA 100 nACoupled Current Transfer Ratio(I C/I F)CTR I F = ±5 mA, V CE = 5 V 50 400 %Collector SaturationVoltageV CE(sat)I F = ±10 mA, I C = 2 mA 0.13 0.3 VIsolationResistanceR I-O V I-O = 1.0 kV DC 1011ΩIsolationCapacitanceC I-O V = 0 V, f = 1.0 MHz 0.4 pFRiseTime*1T r V CC = 5 V, I C = 2 mA, R L = 100 Ω 5 µsFallTime*1t f 7*1 Test circuit for switching timeV CCData Sheet PN10399EJ03V0DS 5TYPICAL CHARACTERISTICS (T A = 25°C, unless otherwise specified)1Ambient Temperature T A (˚C)D i o d e P o w e r D i s s i p a t i o n P D (m W )DIODE POWER DISSIPATION vs.AMBIENT TEMPERATUREAmbient Temperature T A (˚C)T r a n s i s t o r P o w e r D i s s i p a t i o n P C (m W )TRANSISTOR POWER DISSIPATION vs.AMBIENT TEMPERATUREForward Voltage V F (V)F o r w a r d C u r r e n t I F (m A )FORWARD CURRENT vs.FORWARD VOLTAGECollector to Emitter Voltage V CE (V)C o l l e c t o r C u r r e n t I C (m A )COLLECTOR CURRENT vs.COLLECTOR TO EMITTER VOLTAGEAmbient Temperature T A (˚C)COLLECTOR TO EMITTER DARKCURRENT vs. AMBIENT TEMPERATUREC o l l e c t o r t o E m i t t e rD a r k C u r r en t I C E O (n A )Collector Saturation Voltage V CE (sat) (V)C o l l ec t o r C u r r e n t I C (m A )COLLECTOR CURRENT vs.COLLECTOR SATURATION VOLTAGERemark The graphs indicate nominal characteristics.Data Sheet PN10399EJ03V0DS6–––––Ambient Temperature T A (˚C)NORMALIZED CURRENT TRANSFER RATIO vs. AMBIENT TEMPERATUREN o r m a l i z e d C u r r e n t T r a n s f e r R a t i o C T RForward Current I F (mA)C u r r e n t T r a n s f e r R a t i o C T R (%)CURRENT TRANSFER RATIO vs.FORWARD CURRENTLoad Resistance R L (Ω)SWITCHING TIME vs.LOAD RESISTANCES w i t c h i n g T i m e t ( s )µLoad Resistance R L (k Ω)SWITCHING TIME vs.LOAD RESISTANCES w i t c h i n g T i m e t ( s )µFrequency f (kHz)N o r m a l i z e d G a i n G VFREQUENCY RESPONSETime (Hr)LONG TERM CTR DEGRADATIONC T R (R e l a t i v e V a l u e )Remark The graphs indicate nominal characteristics.Data Sheet PN10399EJ03V0DS 7TAPING SPECIFICATIONS (UNIT: mm)8Data Sheet PN10399EJ03V0DSData Sheet PN10399EJ03V0DS9NOTES ON HANDLING1. Recommended soldering conditions(1) Infrared reflow soldering • Peak reflow temperature 260°C or below (package surface temperature) • Time of peak reflow temperature 10 seconds or less • Time of temperature higher than 220°C 60 seconds or less • Time to preheat temperature from 120 to 180°C 120±30 s• Number of reflows Three• Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt% is recommended.)P a c k a g e S u r f a c e T e m p e r a t u r e T (˚C )Time (s)Recommended Temperature Profile of Infrared Reflow(2) Wave soldering • Temperature 260°C or below (molten solder temperature) • Time10 seconds or less• Preheating conditions 120°C or below (package surface temperature)• Number of times One (Allowed to be dipped in solder including plastic mold portion.)• Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt% is recommended.)(3) Soldering by Soldering Iron• Peak Temperature (lead part temperature) 350°C or below • Time (each pins)3 seconds or less• Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt% is recommended.)(a) Soldering of leads should be made at the point 1.5 to 2.0 mm from the root of the lead (b) Please be sure that the temperature of the package would not be heated over 100°CData Sheet PN10399EJ03V0DS10(4) Cautions• FluxesAvoid removing the residual flux with freon-based and chlorine-based cleaning solvent.2. Cautions regarding noiseBe aware that when voltag e is applied suddenly between the photocoupler’s input and output or between collector-emitters at startup, the output transistor may enter the on state, even if the voltage is within the absolute maximum ratings.3. Measurement conditions of current transfer ratios (CTR), which differ according to photocouplerCheck the setting values before use, since the forward current conditions at CTR measurement differ according to product.When using products other than at the specified forward current, the characteristics curves may differ from the standard curves due to CTR value variations or the like. This tendency may sometimes be obvious, especially below I F = 1 mA.Therefore, check the characteristics under the actual operating conditions and thoroughly take variations or the like into consideration before use.USAGE CAUTIONS1.Protect against static electricity when handling.2.Avoid storage at a high temperature and high humidity.Data Sheet PN10399EJ03V0DS11When the product(s) listed in this document is subject to any applicable import or export control laws and regulation of the authority having competent jurisdiction, such product(s) shall not be imported or exported without obtaining the import or export license.M8E 00. 4 - 0110The information in this document is current as of March, 2006. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information.No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others.Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information.While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features.NEC semiconductor products are classified into the following three quality grades:"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application."Standard":Computers, office equipment, communications equipment, test and measurement equipment, audioand visual equipment, home electronic appliances, machine tools, personal electronic equipmentand industrial robots"Special":Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disastersystems, anti-crime systems, safety equipment and medical equipment (not specifically designedfor life support)"Specific":Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, lifesupport systems and medical equipment for life support, etc.The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application.(Note)(1)"NEC" as used in this statement means NEC Corporation, NEC Compound Semiconductor Devices, Ltd.and also includes its majority-owned subsidiaries.(2)"NEC semiconductor products" means any semiconductor product developed or manufactured by or forNEC (as defined above).••••••Data Sheet PN10399EJ03V0DS12NEC Compound Semiconductor Devices Hong Kong LimitedE-mail: ncsd-hk@ (sales, technical and general)Hong Kong Head Office T aipei Branch OfficeKorea Branch OfficeTEL: +852-3107-7303TEL: +886-2-8712-0478TEL: +82-2-558-2120FAX: +852-3107-7309 FAX: +886-2-2545-3859FAX: +82-2-558-5209NEC Electronics (Europe) GmbH http://www.ee.nec.de/TEL: +49-211-6503-0 FAX: +49-211-6503-1327California Eastern Laboratories, Inc. /TEL: +1-408-988-3500 FAX: +1-408-988-02790504NEC Compound Semiconductor Devices, Ltd. /E-mail: salesinfo@ (sales and general)techinfo@ (technical)Sales Division TEL: +81-44-435-1573 FAX: +81-44-435-1579For further information, please contact。

API 8C 第5版2012(PSL1和PSL2)(中文)

钻井和采油提升设备规范（PS Hoisting Equipment (PSL 1 and PSL 2)
API Spec 8C 2012 年 4 月，第 5 版生效日期：2012 年 10 月 1 日
钻井和采油提升设备规范（PSL 1 和 PSL 2）
目次
特别说明........................................................................................................................................................ V 前言.......................................................................................................................................................VI 1 范围............................................................................................................................................................. 1 2 规范性引用文件......................................................................................................................................... 1 3 术语、定义和缩略语.........................

NAMUR接口1 4英寸和1 2英寸高流气动阀G1 4英寸和G1 2英寸用于控制空气驱动器应用说明书

aerospace climate control electromechanical filtrationfluid & gas handling hydraulics pneumatics process control sealing & shieldingD2D1"2""4"MFTD4D3Ra 3.2Description of ApplicationsControl of single or double acting pneumatic actuators, in safe or dangerous areas.NAMUR Interfaces 1/4" & 1/2"Th e interface design is conform to the NAMURstandard and to the VDI/VDE 3845 recommendations of the actuator industry. It allows a compact design of the actuator/valve unit. In case of a 3/2 function,the air of the actuator spring chamber also fl owsthrough the pilot valve (re-breather function).Th is prevents corrosion of the actuator springs.Market DescriptionProcess industriesChemical, Petrochemical industries Oil & GasWater & Sewage Pulp & Paper Food & BeveragePharmaceutical industryPowder Dosing-Transportation Air DryersF T D1 D2 D3 D4 min. M mm mm mm Mm mm M5 1/4 32 24 8 12 M5 M6 1/2 45 40 10 16 M6F: 2 mounting holes - T: 2 actuators control port - M: 2 holes for dowel pins● High fl ow: 1.250 l/min (1/4"), 3.000 l/min (1/2")● Compact design ● Long life expectancy● N3x series compatible with any Parker Lucifer coil(ATEX or not) of electrical group 2 (8/9 W coils)● Fail safe standard● Reduced inventory (3/2 & 5/2 functions with the samevalve on 341Nx5 series)● Mechanical part of the valve ATEX certifi ed accordingstandard EN 13463-1 & -5Function: 3/2 , 5/2, 3/2 <=> 5/2 and 5/3 valves.Manual override: Standard on all versions.Design: Solenoid operated spool valve with combined spring and air return & external air pressure operated versions.Mounting:For direct mounting on NAMUR interface ¼" & ½".Mounting position: I ndifferent.Material speciﬁ cations: Aluminium body. Internal parts from stainless steel.Sealing material from NBR.Range of admissible pressure drop: Δp min. = see table. Δp max. = 10 bar.Media:Dry or lubricated air.Fluid temperature: Min. 0°C Max. + 50°C Ambient temperature: -10°C to +50°CElectrical part: N0x series are compatible with 22mm coil 496131 / 496482 / 496637 SeriesN3x series are compatible with 32/37/40 mm coils part of electrical group 2 (8/9W), including 481865 / 495870 / 495905 Series.Solenoid duty: 100% ED.Voltage: 481865 coil: 12 VDC , 24 VDC , 48 VDC , 110VDC, 24 V / 50 AC, 48 V / 50 AC,110 V / 50 AC, 220-230V/50 AC, 115 V / 60 Hz AC, 230 V / 60 AC.Voltage tolerance: ± 10% of nominal for 481865 coil.Class of insulation material: Class F for 481865 coil.Standards:Mechanical ATEX conform to EN 13463-1 & -5.Customer Value PropositionGeneral Information1313135135135135135G1/4" SeriesSolenoid Operated VersionsN03-N05 Series with 22 mm Coil3/2 Solenoid operated - Combined spring & air return (monostable)1/4 7 1250 2.5 10 10 50 NBR 331N03 - 496131 3 3 300 11/4 7 1250 2.5 10 10 50 NBR 331N03 - 496482 3 3 300 11/4 7 1250 2.5 10 10 50 NBR 331N03 - 496637 3 3 30015/2 Solenoid operated - Combined spring & air return (monostable)1/4 7 1250 2.5 10 10 50NBR 341N03 - 496131 3 3 300 21/4 7 1250 2.5 10 10 50 NBR 341N03 - 496482 3 3 300 2 1/47 1250 2.5 10 1050NBR 341N03 - 496637 3 3 30023/2 <=> 5/2 with conversion plate - Solenoid operated Combined spring & air return (monostable)1/4 7 1250 2.5 10 10 50NBR 341N05 - 496131 3 3 310 3 1/4 7 1250 2.5 10 10 50 NBR 341N05 - 496482 3 3 310 3 1/47 1250 2.5 10 1050NBR 341N05 - 496637 3 3 31035/2 Solenoid operated and return (bistable)1/47 1250 2.5 10 10 50NBR 347N03 - 496131 3 3 430 41/4 7 1250 2.5 10 10 50 NBR 347N03 - 496482 3 3 430 4 1/47 1250 2.5 10 1050NBR 347N03 - 496637 3 3 43045/3 W1 closed in center position - Solenoid operated and return1/4 7 1250 2.5 10 10 50NBR 342N03 - 496131 3 3 430 41/4 7 1250 2.5 10 10 50 NBR 342N03 - 496482 3 3 430 4 1/47 1250 2.5 10 1050NBR 342N03 - 496637 3 3 43045/3 W3 exhausted in center position Solenoid operated and return (bistable)1/4 7 1250 2.5 10 10 50NBR 343N03 - 496131 3 3 430 41/4 7 1250 2.5 10 10 50 NBR 343N03 - 496482 3 3 430 4 1/47 1250 2.5 10 1050NBR 343N03 - 496637 3 3 4304Please consult the "How to Order" part at the end of each coil chapter.Dimensions Reference 3Dimensions Reference 4404040403232322222222232326767676767505050505013 13 13 13 13 13 13 13 44 44 44 222236.536.5G1/4" (2x)G1/4" (3x)G1/4" (3x)G1/4" (3x)M5M5M5M52323232336,52424242423232323868610290 121414101212344355513332227.27.27.27.2Dimensions Reference 1Dimensions Reference 2131351351352440403232879738381313 19.519.513132222 24243232DIN 43650ADIN 43650A G1/8"G1/8"2222 1001302323232324 24 14 12245533G1/4" (3x)G1/4" (3x)M5M52222327.27.5Solenoid Operated VersionsN33-N35 Series with 32 / 37 / 40 mm CoilAdmissible Max. admissible differential ﬂ uidPort size Oriﬁ ce Q N pressure temperatureSeat Reference Consumption Weight Elect. Dim. (bar) (ºC)disc number Power (g) Group Ref.(Watt) max. Min. = 0ºC G mm L/min min DC= AC~ Air & Valve Housing Coil DC AC Neutral gases3/2 <=> 5/2 with conversion plate - Solenoid operated Combined spring & air return (monostable)1/4 7 1250 2.5 10 10 50NBR 341N35 2995 481865 9 8 480 2 5 1/4 7 1250 2.5 10 10 50 NBR - 2995 495870 9 8 700 - 2 1/47 1250 2.5 10 1050NBR - - 495905 8 8 740 - 25/2 Solenoid operated and return (bistable)1/47 1250 2.5 10 10 50NBR 347N33 2995 481865 9 8 750 2 6 1/4 7 1250 2.5 10 10 50 NBR - 2995 495870 9 8 1190 2 - 1/47 1250 2.5 10 1050NBR - - 495905 8 8 1270 2 -5/3 W1 closed in center positionSolenoid operated and return (bistable)1/4 7 1250 2.5 10 10 50NBR 342N33 2995 481865 9 8 750 2 6 1/4 7 1250 2.5 10 10 50 NBR - 2995 495870 9 8 1190 2 - 1/47 1250 2.5 10 1050NBR - - 495905 8 8 1270 2 -Please consult the "How to Order" part at the end of each coil chapter.Dimensions Reference 5Dimensions Reference 61313513513540404032323213 13 13 13131344 22 22 22 22 86868623232323232324 24 24 355133G1/4" (2x)G1/4" (3x)G1/4" (3x)G1/8G1/8G1/8M5M5M52222227.27.27.2External Pressure Air Operated Series 5xx N03 SeriesAdmissible Max. admissible differential ﬂ uidPort size Oriﬁ ce Q N pressure temperatureSeat Reference Consumption Weight Dimensions (bar) (ºC)disc number Power (g) Reference(Watt) max. Min. = 0ºC G mm L/min min DC= AC~ Air & Valve Housing Coil DC AC Neutral gases3/2 External pressure air operatedCombined spring & air return (monostable)External pressure supply 2.5 to 10 bar1/4 7 1250 2.5 10 10 50 NBR 531N03 - w/o - - 21075/2 external pressure air operatedCombined spring & air return (monostable)External pressure supply 2.5 to 10 bar1/47 1250 2.5 10 1050NBR 541N03 - w/o - - 21085/2 external pressure air operatedExternal pressure air return (bistable)External pressure supply 2.5 to 10 bar1/47 1250 2.5 10 1050NBR 547N03 - w/o - - 24095/3 W1 closed in center position - External pressure air operatedExternal pressure air return (bistable)External pressure supply 2.5 to 10 bar1/47 1250 2.5 10 1050NBR 542N03 - w/o - - 2409Dimensions Reference 7Dimensions Reference 8Dimensions Reference 913135135Solenoid Operated VersionsN34 Series with 32 / 37 / 40 mm CoilAdmissible Max. admissible differential ﬂ uidPort size Oriﬁ ce Q N pressure temperatureSeat Reference Consumption Weight Elect. Dim. (bar) (ºC)disc number Power (g) Group Ref.(Watt) max. Min. = 0ºC G mm L/min min DC= AC~ Air & Valve Housing Coil DC AC Neutral gases3/2 Solenoid operatedCombined spring & air return (monostable)1/2 12 3000 2.5 10 10 50NBR 331N34 2995 481865 9 8 910 2 10 1/2 12 3000 2.5 10 10 50 NBR - 2995 495870 9 8 1130 2 - 1/212 3000 2.5 10 1050NBR - - 495905 8 8 1170 2 -5/2 Solenoid operatedCombined spring & air return (monostable)1/2 12 3000 2.5 10 10 50NBR 341N34 2995 481865 9 8 900 2 11 1/2 12 3000 2.5 10 10 50 NBR - 2995 495870 9 8 1120 2 - 1/212 3000 2.5 10 1050NBR - - 495905 8 8 1160 2 -5/2 Solenoid operated and return (bistable)1/212 3000 2.5 10 10 50NBR 347N34 2995 481865 9 8 1240 2 12 1/2 12 3000 2.5 10 10 50 NBR - 2995 495870 9 8 1680 2 - 1/212 3000 2.5 10 1050NBR - - 495905 8 8 1760 2 -Please consult the "How to Order" part at the end of each coil chapter.Dimensions Reference 10Dimensions Reference 11Dimensions Reference 1213135External Pressure Air Operated Series5 xx N04 SeriesAdmissible Max. admissibledifferential ﬂ uidPortsize Oriﬁ ce QNpressure temperatureSeat ReferenceConsumptionWeightDimensions(bar)(ºC)disc number Power (g)Reference(Watt)max. Min. = 0ºCG mm L/min min DC= AC~ Air & Valve Housing Coil DC ACNeutralgases3/2 External pressure air operatedCombined spring & air return (monostable)External pressure supply 2.5 to 10 bar1/2 1230002.510 10 50 NBR531N04 - w/o - - 620 135/2 external pressure air operatedCombined spring & air return (monostable)External pressure supply 2.5 to 10 bar1/2 12 3000 2.5 10 10 50 NBR541N04 - w/o - - 600 14 Dimensions Reference 13Dimensions Reference 14● Power: 3W● Insulation Class: F (155°C)● Degree of Protection: IP65 (with plug)● Duty Cycle: 100% ED ●Ambient Temperature:-10°C to 50°C3 different types are available:● Ref. 496131for a safe area without plug ● Ref. 496482for a safe area with plug ● Ref. 496637for an ATEX area Zone 22Coils and Spare Parts Informations 496637 coil series with connection 2P + G when mounted together with the supplied Pg9 plug (delivered with the coil) are suitable for use in dangerous areas (dust Zone 22) according to the European directive ATEX 94/9/C. Protection mode: Ex tD A22 IP65 - T95°CAvailable Safe area Safe area ATEX Voltageswithout DIN plug with DIN plug Zone 22 EX II 3DOrder Order Order Code Code Code12VDC 496131 C1 496482 C1 496637 C124VDC 496131 C2 496482 C2 496637 C2 48VDC 496131 C4 496482 C4 496637 C4 110VDC 496131 C5 496482 C5 496637 C5 24/50-60VAC 496131 P0 496482 P0 496637 P0 48/50-60VAC 496131 S4 496482 S4 496637 S4 110/50-60VAC 496131 P2 496482 P2 496637 P2 115/60VAC 496131 K8 496482 K8 496637 K8230/50-60VAC 496131 P9496482 P9496637 P9How to OrderThe housing kit is already included into the coil reference, so it’s not needed to add it in the order code:Valve Reference Number - Coil Reference - Voltage code = Order codeExample: 341N03 - 496131 C2Valves and coils may be ordered also separately.Coils 22 mm for N03-N05 SeriesSafe Area & ATEX Zone 22 Ref. 496131 / 496482 / 496637Th ese coils with connection for 2 P+G DIN 43650 B plug are encapsulated in synthetic material, conform to the IEC/CENELEC safety standards and comply with European low voltage directive73/23/EC .S a f e A r e a & A T E X Z o n e 22● Power: 8W (AC) 9W (DC)● Insulation Class: F (155°C)● Degree of Protection: IP65 (with plug)● Duty Cycle: 100% ED● Voltage Tolerance -10%/+10%● Ambient Temperature -40°C/+50°C◗ The application can be limited alsoby the temperature range of the valveAvailable Order Voltages Code 12VDC 481865 C1 24VDC 481865 C2 48VDC 481865 C4 110VDC 481865 C5 24/50VAC 481865 A2 48/50VAC 481865 A4 110/50VAC 481865 A5 220-230/50VAC 481865 3D 380/50VAC 481865 A9 24/60VAC 481865 B2 115/60VAC 481865 K8 230/60VAC481865 J3How to OrderThis coil must be used together with a housing kit which includes a nut, a plate, and a washer. Housing Kit Order Code: 2995Valve Reference Number - Housing Reference - Coil Reference - Voltage Code = Order CodeExample: 341N35 - 2995 - 481865 C2Coils 32 mm / 37 mm / 40 mm for N33-N34-N35 Series Safe Area Ref. 481865N3x series are compatible with any Parker Lucifer coil part of electrical group 2. Th at group includes many diff erent coils for safe areas or areas submitted to ATEX certifi cations. Th ese coils are of the 8/9W class. Th ese coils with connection for 2P+G DIN 43650 A plug are encapsulated in synthetic material, conform to the IEC/CENELEC safety standards and comply with European low voltage directive 73/23/EC.S a f e A r e adtCoils and Spare Parts Informations ●Power: 8W● Insulation Class: F (155°C)● Degree of Protection: IP67 (with 4538 housing)● Duty Cycle: 100%●Voltage Tolerance -10%/+10%● Ambient Temperature -40°C/+50°C ◗ The application can be limited alsoby the temperature range of the valveHow to OrderValve Reference Number - Housing Reference - Coil Reference - Voltage Code = Order CodeExample: 331N34 - 4538 - 481000C2Housing 4538This enclosure is dust and water proof. It corresponds to the protection degree IP67 according to IEC/EN60529. Corrosion resistant, the metallic housing offers good protection for the coil against shocks. It can be 360° orientable. This housing must be equipped with 481000 series coil.Material: galvanized passivated steel - Degree of protection IP67 according to IEC/EN 60529 - Electrical connection: cable connection by cable gland according to DIN46320. Cable with outer diameter 6.5-13.5 mm (M20x1.5) can be simply sealed using a rubber gland resilient sealing rings. The enclosure is internally and externally fi tted with grounding and earthing screw terminals.Coils 32 mm / 37 mm / 40 mm for N33-N34-N35 Series Safe Area Coil 481000 Series with 4538 Watertight and dust proof housing IP67 Ref. 481000Coil 481000 series is encapsulated in synthetic material. Electrical connection is made with screw terminals for wire up to 1.5 mm. Th is coil conforms to the IEC/CENELEC safety standards and complies with European low voltage directive 73/23/EC. It must be used with a metallic housing.S a f e A r e a●II 3 G - Ex nAC IIC T3 / T4● II 3 D - Ex tD A22 IP65 - T 195°C / T 130°C● Power: 8W (AC) 9W (DC)● Insulation Class: F (155°C)● Degree of Protection: IP65 (with plug)● Duty Cycle: 100% ED● Voltage Tolerance -10%/+10%●Ambient temperature◗ T3 (gaz) T 195°C (dust) -40°C/+65°C ◗ T4 (gaz) T 130°C (dust) -40°C/+50°C◗ The application can be limited alsoby the temperature range of the valveAvailable Order Voltages Code 24VDC 495870 C2 48VDC 495870 C4 110VDC 495870 C5 24/50VAC 495870 A2 48/50VAC 495870 A4 110/50VAC 495870 A5 220-230/50VAC495870 3DA T E X Z o n e 2-22How to OrderThis coil must be used together with a housing kit which includes a nut, a plate, and a washer. Housing kit order code: 2995Valve Reference Number - Coil Reference - Voltage code = Order codeExample: 331N34 - 2995 - 495870 A5Coils 32 mm / 37 mm / 40 mm for N33-N34-N35 Series ATEX Zone 2-22 Ref. 495870Th is coil with connection 2P+G - when mounted together with the supplied Pg 9 plug (delivered with the coil), is suitable for use in Gas and Dust dangerous areas (Zone 2-22), according to the European directive ATEX 94/9/C . Certifi cate LCIE 05 ATEX 6003 X - Protection mode: non sparking / limited energy solenoid0081II 3 G-DA T E X z o n e 1-21●II 2 G - Ex d mb IIC T4● II 2 D - Ex tD A21 IP67 - T 130°C● Insulation Class H (180°C)● Power: 8W (AC-DC)● Degree of Protection IP67● Duty Cycle 100%● Voltage Tolerance -10%/+10%● Ambient Temperature: -40°C/+65°C◗ The application can be limited alsoby the temperature range of the valveAvailable Order Voltages Code 24VDC 495905 C2 48VDC 495905 C4 110VDC 495905 C5 24/50VAC 495905 A2 48/50VAC 495905 A4 110/50VAC 495905 E5 220-230/50VAC 495905 3D115/60 495905 E5240/60 495905 B8Electric connection is done in the connection box on an easily accessible connector terminals.M20x1.5 Cable glandHow to OrderThe housing kit is already included into the coil reference, so it’s not needed to add it in the order code:Valve Reference Number - Coil Reference - Voltage code = Order codeExample: 347N33 - 495905 C2Coils 32 mm / 37 mm / 40 mm for N33-N34-N35 Series ATEX Zone 1-21 Ref. 495905Th is coil is suitable for use in Gas and Dust dangerous areas (Zone 1-21), according to the European directive ATEX 94/9/C . It’s also IECEx certifi ed according to the IECEx Scheme. Certifi cate LCIE 02 ATEX 6451 X - Protection modes: Explosionproof solenoids with fl ameproof enclosure / encapsulation "d mb"0081II 2 G/Dnct c io o n n bo ox al a l s.s .Available OrderOrder Voltages Code Code 6VDC 483371 C0 - 12VDC 483371 C1 - 24VDC 483371 C2 494040 C236VDC 483371 C3 - 48VDC 483371 C4 - 60VDC 483371 M3 - 110VDC 483371 C5 - 125VDC 483371 3N 494040 3N 220VDC 483371 C7 494040 C712/50VAC 483371 A1 - 24/50VAC 483371 A2 494040 A248/50VAC 483371 A4 - 110-115/50VAC 483371 OA 494040 OA 220-230/50 483371 3D 494040 3D24/60VAC 483371 B2 - 110-115/60VAC 483371 6J - 220-240/60VAC 483371 4K-380/50-440/60VAC -494040 5PHow to OrderThe housing kit is already included into the coil reference, so it’s not needed to add it in the order code:Valve Reference Number - Coil Reference - Voltage code = Order codeExample: 347N33 - 483371C2Coils 32 mm / 37 mm / 40 mm for N33-N34-N35 Series ATEX Solutions Zone 1-21 Ref. 483371 & 494040Th ese coils are suitable for use in Gas and Dust dangerous areas (Zone 1-21), according to the European directive ATEX 94/9/C. Protection mode:encapsulated electrical parts with increased safety.483371…DC: 24V / 400mA - 48V / 250mA 110V / 100mAAC: 24V / 630mA - 48V / 315mA 110/115V / 160mA 220/230V / 80mA494040…DC: 24V / 400mA - 125V / 80mA48V /220V - 63mAAC: 24V / 630mA - 48V / 315mA 110/115V / 160mA220/230V / 80mAA T E X Z o n e 1-21Reference 483371 or HZ06 494040 or HZ23Approval LCIE 02 ATEX 6011 X LCIE 02 ATEX 6013 X Type of Gas II 2 G - Ex e mb II T4 II 2 G - Ex e mb II T3 II 2 G - Ex e mb II T4 protection Dust II 2 D - Ex tD A21 T 130°C II 2 D - Ex tD A21 T 195°C II 2 D - Ex tD A21 T 130°C Degree of protection I P67 I P67 Ambiant temperature -40°C to +65°C -40°C to +90°C -40°C to +65°CThe application is limited also by the temperature range of the valveClass of insulation F (155°) H (180°) Electrical connection By special cable gland or M20x1.5 "Ex e" on screw terminals for wires up to 1.5 mm². Cables with outside diameter 6.5 mm to 13.5 mm can be simply sealed using the rubber gland with resilient sealing rings supplied. Elect. DC Pn (hot) 8 W 8 W Power P (cold) 20°C 9 W 9 W AC Pn (holding) 8 W 8 W 32 VA (9 W) 32 VA (9 W) Voltage tolerance Tolerance -10/ +10% of the nominal voltageSolenoid duty Continuous duty solenoid (ED 100%)Fuses: Both electrical 483371… and 494040… parts have to be connected in series with asafety fuse according to CEI 60127-3.Spare Parts Mounting Kit and AccessoriesExhaust Flow RegulatorsMaterial Body: Brass Filter element: Sintered bronze Spring: Stainless Steel Seal: NBRG1/8" Order code: 496551 G1/4" Order code: 496552 G1/2" Order code: 496553Kit for G1/4" Modelswithout conversion plate (N x 3 Series)Kit includes the 2 mounting screws M5 x 25 A2, the dowel pin M5 x 10 A2, the 2 O-rings NBR 15 x 2.5Order code: 496132Kit for G1/2" Models (N x 4 Series)Kit includes the 2 mounting screws M6 x 35 A2, the dowel pin M6 x 12 A2, the 2 O-rings NBR 24 x 3Order code: 496133Kit for G1/4" Modelswith conversion plate (N x 5 Series)Kit includes the 2 mounting screws M5 x 35 A2, the dowel pin M5 x 20 A2,the conversion plate equipped with its seals Order code:496742Connector for 32 mm CoilConnector DIN43650 AA Pg9 2P+E Order code: 486586Housing for 22 mm CoilPlastic nut with O-ring Order code: 3125Connector for 22 mm CoilConnector DIN43650 AB Pg9 2P+E Order code:481043NotesAEROSPACEKey Markets• Aircraft engines• Business & general aviation• Commercial transports• Land-based weapons systems• Military aircraft• Missiles & launch vehicles• Regional transports• Unmanned aerial vehiclesKey ProductsFlight control systems& compon ntsFluid conveyance systemsFluid metering delivery& atomization devicesFuel systems & componentsHydraulic systems & componentsInert nitrogen generating systemsPneumatic systems & components• Wheels & brakesCLIMATE CONTROLKey MarketsAgricultureAir conditioningFood, beverage & dairy• Life sciences & medicalPrecision coolingProcessingTransportationKey ProductsCO2 controlsElectronic controllersFilter driersHand shut-off valvesHose & ﬁ ttingsPressure regulating valvesRefrigerant distributorsSafety relief valvesSolenoid valvesThermostatic expansion valvesFILTRATIONKey MarketsFood & beverageIndustrial machineryLife sciencesMarineMobile equipmentOil & gasPower generationProcessTransportationKey ProductsAnalytical gas generatorsCompressed air & gas ﬁ ltersCondition monitoringEngine air, fuel & oil ﬁ ltration& syst msHydraulic, lubrication& coolant ﬁ ltersProcess, chemical, water& microﬁ ltration ﬁ ltersNitrogen, hydrogen & zeroair g n ratorsELECTROMECHANICALKey MarketsAerospaceFactory automationFood & beverageLife science & medicalMachine tools• Packaging machinery• Paper machinery• Plastics machinery & converting• Primary metalsSemiconductor & electronics• TextileWire & cableKey Products• AC/DC drives & systemsElectric actuatorsGearheadsHuman machine interfacesIndustrial PCs• InvertersLinear motors, slides and stagesPrecision stages• Stepper motorsServo motors, drives & controlsStructural extrusionsPNEUMATICSKey Markets• Aerospace• Conveyor & material handling• Factory automation• Food & beverage• Life science & medical• Machine tools• Packaging machinery• Transportation & automotiveKey ProductsAir preparationCompact cylindersField bus valve systemsGrippersGuided cylindersManifoldsMiniature ﬂ uidicsPneumatic accessoriesPneumatic actuators & grippersPneumatic valves and controlsRodless cylindersRotary actuatorsTie rod cylindersVacuum generators, cups & sensorsFLUID & GAS HANDLINGKey MarketsAerospaceAgricultureBulk chemical handlingConstruction machineryFood & beverageFuel & gas deliveryIndustrial machineryMobileOil & gasTransportationWeldingKey ProductsBrass ﬁ ttings & valvesDiagnostic equipmentFluid conveyance systemsIndustrial hosePTFE & PFA hose, tubing& plastic ﬁ ttingsRubber & thermoplastic hose& couplingsTube ﬁ ttings & adaptersQuick disconnectsHYDRAULICSKey Markets• Aerospace• Aerial lift• Agriculture• Construction machinery• Forestry• Industrial machinery• Mining• Oil & gas• Power generation & energy• Truck hydraulicsKey Products• Diagnostic equipment• Hydraulic cylinders& accumulators• Hydraulic motors & pumps• Hydraulic systems• Hydraulic valves & controls• Power take-offs• Rubber & thermoplastic hose& couplings• Tube ﬁ ttings & adapters• Quick disconnectsPROCESS CONTROLKey MarketsChemical & reﬁ ningFood, beverage & dairyMedical & dentalMicroelectronicsOil & gasPower generationKey ProductsAnalytical sample conditioningproducts & systemsFluoropolymer chemical deliveryﬁ ttings, valves & pumpsHigh purity gas delivery ﬁ ttings,valves & regulatorsInstrumentation ﬁ ttings, valves& r gulatorsMedium pressure ﬁ ttings & valvesProcess control manifoldsSEALING & SHIELDINGKey MarketsAerospaceChemical processingConsumerEnergy, oil & gasFluid powerGeneral industrialInformation technologyLife sciencesMilitarySemiconductorTelecommunicationsTransportationKey ProductsDynamic sealsElastomeric o-ringsEMI shieldingExtruded & precision-cut,fabricated elastomeric sealsHomogeneous & insertedlastom ric shap sHigh temperature metal sealsMetal & plastic retainedcomposit s alsThermal management Parker’s Motion & Control TechnologiesAt Parker, we’re guidedby a relentless drive to helpour customers become moreproductive and achievehigher levels of proﬁ tabilityby engineering the bestsystems for their require-ments. It means looking atcustomer applications frommany angles to ﬁ nd newways to create value.Whatever the motion andcontrol technology need,Parker has the experience,breadth of product and globalreach to consistently deliver.No company knows moreabout motion and controltechnology than Parker.For further info call00800 27 27 5374.AE – UAE, Dubai Tel: +971 4 8127100********************AR – Argentina, Buenos Aires Tel: +54 3327 44 4129AT – Austria, Wiener Neustadt Tel: +43 (0)2622 23501-0*************************AT – Eastern Europe, Wiener NeustadtTel: +43 (0)2622 23501 900****************************AU – Australia, Castle Hill Tel: +61 (0)2-9634 7777AZ – Azerbaijan, Baku Tel: +994 50 2233 458****************************BE/LU – Belgium, Nivelles Tel: +32 (0)67 280 900*************************BR – Brazil, Cachoeirinha RS Tel: +55 51 3470 9144BY – Belarus, Minsk Tel: +375 17 209 9399*************************CA – Canada, Milton, Ontario Tel: +1 905 693 3000CH – Switzerland, Etoy Tel: +41 (0)21 821 87 00*****************************CL – Chile, Santiago Tel: +56 2 623 1216CN – China, Shanghai Tel: +86 21 2899 5000CZ – Czech Republic, Klecany Tel: +420 284 083 111*******************************DE – Germany, Kaarst Tel: +49 (0)2131 4016 0*************************DK – Denmark, Ballerup Tel: +45 43 56 04 00*************************ES – Spain, Madrid Tel: +34 902 330 001***********************FI – Finland, Vantaa Tel: +358 (0)20 753 2500parker.fi ****************FR – France, Contamine s/ArveTel: +33 (0)4 50 25 80 25************************GR – Greece, Athens Tel: +30 210 933 6450************************HK – Hong Kong Tel: +852 2428 8008HU – Hungary, Budapest Tel: +36 1 220 4155*************************IE – Ireland, Dublin Tel: +353 (0)1 466 6370*************************IN – India, MumbaiTel: +91 22 6513 7081-85IT – Italy, Corsico (MI)Tel: +39 02 45 19 21***********************JP – Japan, Tokyo Tel: +81 (0)3 6408 3901KR – South Korea, Seoul Tel: +82 2 559 0400KZ – Kazakhstan, Almaty Tel: +7 7272 505 800****************************LV – Latvia, Riga Tel: +371 6 745 2601************************MX – Mexico, Apodaca Tel: +52 81 8156 6000MY – Malaysia, Shah Alam Tel: +60 3 7849 0800NL – The Netherlands, OldenzaalTel: +31 (0)541 585 000********************NO – Norway, Ski Tel: +47 64 91 10 00************************NZ – New Zealand, Mt Wellington Tel: +64 9 574 1744PL – Poland, Warsaw Tel: +48 (0)22 573 24 00************************PT – Portugal, Leca da Palmeira Tel: +351 22 999 7360**************************RO – Romania, Bucharest Tel: +40 21 252 1382*************************RU – Russia, Moscow Tel: +7 495 645-2156************************SE – Sweden, Spånga Tel: +46 (0)8 59 79 50 00************************SG – Singapore Tel: +65 6887 6300SK – Slovakia, Banská Bystrica Tel: +421 484 162 252**************************SL – Slovenia, Novo Mesto Tel: +386 7 337 6650**************************TH – Thailand, Bangkok Tel: +662 717 8140TR – Turkey, Istanbul Tel: +90 216 4997081************************TW – Taiwan, Taipei Tel: +886 2 2298 8987UA – Ukraine, Kiev Tel +380 44 494 2731*************************UK – United Kingdom, WarwickTel: +44 (0)1926 317 878********************US – USA, Cleveland Tel: +1 216 896 3000VE – Venezuela, Caracas Tel: +58 212 238 5422ZA – South Africa,Kempton ParkTel: +27 (0)11 961 0700*****************************Parker WorldwideEuropean Product Information Centre Free phone: 00 800 27 27 5374(from AT, BE, CH, CZ, DE, EE, ES, FI, FR, IE, IL, IS, IT, LU, MT, NL, NO, PT, SE, SK, UK)E d . 2010-06-08Parker Hanniﬁ n Ltd. Tachbrook Park DriveTachbrook Park, Warwick CV34 6TU United KingdomTel.: +44 (0) 1926 317 878Catalogue 1101/UK - 06/2010 - TMCZ© 2010 Parker Hannifi n Corporation.All rights reserved.。

PS2565L2-1-E4中文资料

DESCRIPTIONThe PS2565-1 is optically coupled isolators containing GaAs light emitting diodes and an NPN silicon phototransistor.The PS2565-1 is in a plastic DIP (Dual In-line Package) and the PS2565L-1 is lead bending type (Gull-wing) for surface mount.The PS2565L1-1 is lead bending type for long creepage distance.The PS2565L2-1 is lead bending type for long creepage distance (Gull-wing) for surface mount.FEATURES• AC input response• High Isolation voltage (BV = 5 000 Vr.m.s.) • High collector to emitter voltage (V CEO = 80 V) • High current transfer ratio (CTR = 200% TYP.) • High-speed switching (t r = 3 µs TYP., t f = 5 µs TYP.)• Ordering number of taping product: PS2565L-1-E3, E4, F3, F4, PS2565L2-1-E3, E4 • Safety standards • UL approved: File No. E72422 • CSA approved: No. CA 101391 • BSI approved: No. 7112/7420• SEMKO approved: No. 303059, 307244 • NEMKO approved: No. P0*******, P0******* • DEMKO approved: No. 312341, 312340 • FIMKO approved: No. FI 10620, FI 11898• DIN EN60747-5-2 (VDE0884 Part2) approved (Option)APPLICATIONS• Telephone/AX. • A/OA equipment• Programmable logic controllerDATA SHEETThe information in this document is subject to change without notice. Before using this document, please confirm thatthis is the latest version.Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices representative for availability and additional information.The mark shows major revised points.Document No. PN10236EJ03V0DS (3rd edition)Date Published March 2006 CP(K) Printed in JapanNEC Compound Semiconductor Devices, Ltd. 1992, 2006PACKAGE DIMENSIONS (UNIT : mm)DIP Type (New package)DIP Type2Data Sheet PN10236EJ03V0DSLead Bending Type (New package)Lead Bending TypeData Sheet PN10236EJ03V0DS3Lead Bending Type For Long Creepage Distance (New Package)Lead Bending Type For Long Creepage Distance4Data Sheet PN10236EJ03V0DSLead Bending Type For Long Creepage Distance (Gull-Wing) (New Package)Lead Bending Type For Long Creepage Distance (Gull-Wing)Data Sheet PN10236EJ03V0DS5MARKING EXAMPLE6Data Sheet PN10236EJ03V0DSORDERING INFORMATIONPart NumberOrder NumberSolder Plating SpecificationPacking StyleSafety StandardApproval Application Part Number *1PS2565-1 PS2565-1-A Pb-Free Magazine case 100 pcs Standard products PS2565-1 PS2565L-1PS2565L-1-A(UL, CSA, BSI,PS2565L1-1 PS2565L1-1-A NEMKO, SEMKO, PS2565L2-1 PS2565L2-1-ADEMKO, FIMKO PS2565L-1-E3 PS2565L-1-E3-A Embossed Tape 1 000 pcs/reel approved) PS2565L-1-E4 PS2565L-1-E4-APS2565L-1-F 3 PS2565L-1-F3-A Embossed Tape 2 000 pcs/reel PS2565L-1-F 4 PS2565L-1-F 4-APS2565L2-1-E3 PS2565L2-1-E3-A Embossed Tape 1 000 pcs/reel PS2565L2-1-E4 PS2565L2-1-E4-APS2565-1-VPS2565-1-V-AMagazine case 100 pcs DIN EN60747-5-2 PS2565L-1-V PS2565L-1-V-A (VDE0884 Part2) PS2565L1-1-V PS2565L1-1-V-A approved products PS2565L2-1-V PS2565L2-1-V-A(option) PS2565L-1-V-E3 PS2565L-1-V-E3-AEmbossed Tape 1 000 pcs/reel PS2565L-1-V-E4 PS2565L-1-V-E4-APS2565L-1-V-F 3 PS2565L-1-V-F 3-A Embossed Tape 2 000 pcs/reel PS2565L-1-V-F 4 PS2565L-1-V-F 4-APS2565L2-1-V-E3 PS2565L2-1-V-E3-AEmbossed Tape 1 000 pcs/reel PS2565L2-1-V-E4 PS2565L2-1-V-E4-A*1 For the application of the Safety Standard, following part number should be used.Data Sheet PN10236EJ03V0DS7ABSOLUTE MAXIMUM RATINGS (T A = 25°C, unless otherwise specified)Ratings Unit Parameter SymbolDiode Forward Current (DC) I F 80 mA Power Dissipation Derating ∆P D/°C 1.5 mW/°CDissipation P D 150 mWPowerPeak Forward Current*1I FP 1 A Transistor Collector to Emitter Voltage V CEO 80 V Emitter to Collector Voltage V ECO 7 VCurrent I C 50 mACollectorPower Dissipation Derating ∆P C/°C 1.5 mW/°CPowerDissipation P C 150 mWVr.m.s.000Isolation Voltage*2 BV5Operating Ambient Temperature T A–55 to +100 °CStorage Temperature T stg–55 to +150 °C*1PW = 100 µs, Duty Cycle = 1%*2AC voltage for 1 minute at T A = 25°C, RH = 60% between input and outputPins 1-2 shorted together, 3-4 shorted together.8Data Sheet PN10236EJ03V0DSELECTRICAL CHARACTERISTICS (T A = 25°C)Parameter Symbol Conditions MIN. TYP. MAX. UnitDiodeorward VoltageV FI F = ±10 mA 1.17 1.4 V Terminal Capacitance C t V = 0 V, f = 1.0 MHz 100 pF Transistor Collector to Emitter DarkCurrentI CEOV CE = 80 V, I F = 0 mA100nACoupledCurrent Transfer Ratio (I C /I F )CTR I F = ±5 mA, V CE = 5 V 80 200 400 %CTR Ratio *1CTR1/ CTR2I F = 5 mA, V CE = 5 V 0.3 1.0 3.0Collector Saturation VoltageV CE (sat)I F = ±10 mA, I C = 2 mA0.3 VIsolation Resistance R I-O V I-O = 1.0 kV DC 1011Ω Isolation Capacitance C I-O V = 0 V, f = 1.0 MHz0.5pFRise Time *2t r V CC = 10 V, I C = 2 mA, R L = 100 Ω 3 µsF allTime *2 t f5*1 CTR1 = I C1/I F1, CTR2 = I C2/I F2I F1I F2V CE*2 Test circuit for switching timeV CCOUTΩData Sheet PN10236EJ03V0DS9TYPICAL CHARACTERISTICS (T A = 25°C, unless otherwise specified)1501005001505025501001251500.80.60.40.20–1.080–1.5–40–80–600–0.50.5 1.51.00–20402060D i o d e P o w e r D i s s i p a t i o n P D (m W )T r a n s i s t o r P o w e r D i s s i p a t i o n P C (m W )Ambient Temperature T A (˚C)F o r w a r d C u r r e n t I F (m A )Forward Voltage V F (V)C o l l e c t o r t o E m i t t e r D a r k C u r r e n t I C E O (n A )Collector Saturation Voltage V CE(sat) (V)Ambient Temperature T A (˚C)Ambient Temperature T A (˚C)DIODE POWER DISSIPATION vs.AMBIENT TEMPERATURETRANSISTOR POWER DISSIPATION vs. AMBIENT TEMPERATUREFORWARD CURRENT vs.FORWARD VOLTAGECOLLECTOR TO EMITTER DARKCURRENT vs. AMBIENT TEMPERATURECOLLECTOR CURRENT vs.COLLECTOR SATURATION VOLTAGEC o l l e c t o r C u r re n t I C (m A )F o r w a r d C u r r e n t I F (m A )Forward Voltage V F (V)FORWARD CURRENT vs.FORWARD VOLTAGE751Remark The graphs indicate nominal characteristics.Data Sheet PN10236EJ03V0DS102502001500C o l l e c t o r C u r r e n t I C (m A )COLLECTOR CURRENT vs.COLLECTOR TO EMITTER VOLTAGELoad Resistance R L (Ω)Frequency f (kHz)C u r r e n t T r a n s f e r R a t i o C T R (%)S w i t c h i n g T i m e t ( s )µNORMALIZED CURRENT TRANSFER RATIO vs. AMBIENT TEMPERATURERemark The graphs indicate nominal characteristics.Data Sheet PN10236EJ03V0DS11Time (Hr)C T R (R e l a t i v e V a l u e )LONG TERM CTR DEGRADATIONRemark The graph indicates nominal characteristics.Data Sheet PN10236EJ03V0DS12TAPING SPECIFICATIONS (UNIT : mm)Data Sheet PN10236EJ03V0DS1314Data Sheet PN10236EJ03V0DSData Sheet PN10236EJ03V0DS15NOTES ON HANDLING1. Recommended soldering conditions(1) Infrared reflow soldering • Peak reflow temperature 260°C or below (package surface temperature) • Time of peak reflow temperature 10 seconds or less • Time of temperature higher than 220°C 60 seconds or less • Time to preheat temperature from 120 to 180°C 120±30 s• Number of reflows Three• Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt% is recommended.)P a c k a g e S u r f a c e T e m p e r a t u r e T (˚C )Time (s)Recommended Temperature Profile of Infrared Reflow(2) Wave soldering • Temperature 260°C or below (molten solder temperature) • Time10 seconds or less• Preheating conditions 120°C or below (package surface temperature)• Number of times One (Allowed to be dipped in solder including plastic mold portion.)• Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt% is recommended.)(3) Soldering by soldering iron• Peak temperature (lead part temperature) 350°C or below • Time (each pins)3 seconds or less• Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt% is recommended.)(a) Soldering of leads should be made at the point 1.5 to 2.0 mm from the root of the lead. (b) Please be sure that the temperature of the package would not be heated over 100°C.Data Sheet PN10236EJ03V0DS16(4) Cautions• FluxesAvoid removing the residual flux with freon-based and chlorine-based cleaning solvent.2. Cautions regarding noiseBe aware that when voltage is applied suddenly between the photocoupler’s input and output or between collector-emitters at startup, the output transistor may enter the on state, even if the voltage is within the absolute maximum ratings.3. Measurement conditions of current transfer ratios (CTR), which differ according to photocouplerCheck the setting values before use, since the forward current conditions at CTR measurement differ according to product.When using products other than at the specified forward current, the characteristics curves may differ from the standard curves due to CTR value variations or the like. This tendency may sometimes be obvious, especially below I F = 1 mA.Therefore, check the characteristics under the actual operating conditions and thoroughly take variations or the like into consideration before use.USAGE CAUTIONS1.Protect against static electricity when handling.2.Avoid storage at a high temperature and high humidity.Data Sheet PN10236EJ03V0DS17SPECIFICATION OF VDE MARKS LICENSE DOCUMENTParameter SymbolSpeckUnit Application classification (DIN VDE 0109)for rated line voltages ≤ 300 Vr.m.s. for rated line voltages ≤ 600 Vr.m.s. IV IIIClimatic test class (DIN IEC 68 Teil 1/09.80) 55/100/21 Dielectric strengthmaximum operating isolation voltageTest voltage (partial discharge test, procedure a for type test and random test) U pr = 1.2 × U IORM, P d < 5 pC U IORMU pr8901 068V peakV peakTest voltage (partial discharge test, procedure b for all devices test) U pr = 1.6 × U IORM, P d < 5 pC U pr 1424 V peakHighest permissible overvoltage U TR 8000 V peak Degree of pollution (DIN VDE 0109) 2Clearance distance > 7.0 mm Creepage distance > 7.0 mm Comparative tracking index (DIN IEC 112/VDE 0303 part 1) CTI 175Material group (DIN VDE 0109) III aStorage temperature range T stg–55 to +150 °C Operating temperature range T A–55 to +100 °C Isolation resistance, minimum valueV IO = 500 V dc at T A = 25°CV IO = 500 V dc at T A MAX. at least 100°C Ris MIN.Ris MIN.10121011ΩΩSafety maximum ratings (maximum permissible in case of fault, see thermal derating curve)Package temperatureCurrent (input current I F, Psi = 0)Power (output or total power dissipation) Isolation resistanceV IO = 500 V dc at T A = 175°C (Tsi)TsiIsiPsiRis MIN.175400700109°CmAmWΩData Sheet PN10236EJ03V0DS18When the product(s) listed in this document is subject to any applicable import or export control laws and regulation of the authority having competent jurisdiction, such product(s) shall not be imported or exported without obtaining the import or export license.M8E 00. 4 - 0110The information in this document is current as of March, 2006. The information is subject to changewithout notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information.No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others.Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information.While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features.NEC semiconductor products are classified into the following three quality grades:"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application."Standard":Computers, office equipment, communications equipment, test and measurement equipment, audioand visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots"Special":Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disastersystems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support)"Specific":Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, lifesupport systems and medical equipment for life support, etc.The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application.(Note)(1)"NEC" as used in this statement means NEC Corporation, NEC Compound Semiconductor Devices, Ltd.and also includes its majority-owned subsidiaries.(2)"NEC semiconductor products" means any semiconductor product developed or manufactured by or forNEC (as defined above).•••••• Data Sheet PN10236EJ03V0DS19NEC Compound Semiconductor Devices Hong Kong Limited E-mail: ncsd-hk@ (sales, technical and general)Hong Kong Head Office T aipei Branch OfficeKorea Branch OfficeTEL: +852-3107-7303TEL: +886-2-8712-0478TEL: +82-2-558-2120FAX: +852-3107-7309 FAX: +886-2-2545-3859FAX: +82-2-558-5209NEC Electronics (Europe) GmbH http://www.ee.nec.de/TEL: +49-211-6503-0 FAX: +49-211-6503-1327California Eastern Laboratories, Inc. / TEL: +1-408-988-3500 FAX: +1-408-988-02790504NEC Compound Semiconductor Devices, Ltd. / E-mail: salesinfo@ (sales and general) techinfo@ (technical)Sales Division TEL: +81-44-435-1573 FAX: +81-44-435-1579For further information, please contact。

夏普256维修手册

1-1 确认反射镜装置动作1-2 确认光学系传感器动作1-6 反光镜扫描连续动作2-1 SPF连续动作2-2 确认SPF传感器动作2-3 确认SPF电动机正转方向动人2-4 确认SPF电动机逆转方向动作2-8 确认SPF进纸电磁阀动作2-9 RSPF翻转电磁铁动作检查2-10 RSPF出纸门电磁铁动作检查2-11 确认SPFPS释放电磁阀动作3-2 确认移动分离传感器动作3-3 确认分页器移动动人3-4 确认分离板动作（检测是否正常转动）3-11 确认配页器原位动作5-1 确认扣作部显示（面板LED灯全亮秒）5-2 确认加热灯亮（定影灯50秒间隔亮5次）5-3 确认复印机灯亮（10秒浓度键改亮度）6-1 确认进纸电磁阀动作（50秒间隔驱动20次）6-10 驱动主盒半圆辊7-1 预热时间表示有JAM老化7-4 预热省略7-6 间歇老化有纸7-8 预热时间表示8-1 复印模式的显影偏压输出8-2 复印模式的主充电器栅极电压（High状态高）输出8-3 复印模式的主充电器栅极电压（Low状态低）输出8-6 转印电压输出8-10 打印模式的显影偏压以及控制回路的动作确认和调整8-11 打印模式的主充电器栅极电压（High状态）以及控制回路的动作确认8-12 打印模式的主充电器栅极电压（Low状态）以及控制回路的动作确认8-13 FAX模式的显影偏压以及控制回路的动作确认和调整8-14 FAX模式的主充电器栅极电压（High状态）以及控制回路的动作确认8-15 FAX模式的主充电器栅极电压（Low状态）以及控制回路的动作确认9-1 双面器负载（马达）正转测试9-2 双面器负载（马达）反转测试9-4 双面器马达的转速调整9-5 双面器马达的把向转换时间调整10 确认墨粉电动机动作14 解除U2以外的故障16 解除U2故障20-1 清除保养计数21-1 保养循环的设定（0=2500张 1=5000张 2=15000张 3=30000张 4=150000张5=999999张）22-1 保养计数器的显示22-2 保养预置值显示（SIM20-1设定值）22-3 卡纸储存的显示（最近30次卡纸）22-4 总卡纸计数显示22-5 总计数显示22-6 显影计数器显示22-8 SPF计数器显示22-9 进纸计数器显示22-12 光鼓计数器显示22-13 CRUM类型显示22-14 FLASH ROM的版本22-15 故障储存器显示（最近15次故障）22-16 双面打印计数显示22-17 复印计数器显示22-18 打印计数器显示22-19 电子分类计数器显示22-21 扫描计数器显示22-22 SPF卡纸计数器显示24-1 卡纸储存器清除24-2 故障储存器清除24-4 SPF计数器清除24-5 双面打印计数清除24-6 进纸计数器清除24-7 光鼓计数器清除24-8 复印计数器清除24-9 印刷计数器清除24-10 电子类计数器清除24-13 扫描计数器清除24-14 SPF卡纸计数清除24-15 扫描模式计数器清除25-1 确认主电机机劝作（30秒）25-10 确认LSU多面镜电动机动作（30秒）26-1 选件开关的显示（选购件对应灯亮）26-3 部门管理器的设定(0:计数模式 1:投币模式 )26-4 本机双面动作设置(0:无双面 1:有双面功能)26-5 计数器方式设定(0:双面计数 1:单面计数)26-6 发送地设定(5:中国 6:台湾)26-7 直接显示CPM旋转速度26-10 网络扫描的试用设定26-18 节粉方式(0:节粉关闭 1打开)26-22 语言设定（打印卡面板语言）(0:日语 1:英语……)26-30 CE标记对应控制设定(0:CE标记OFF 1:ON)26-32 风扇旋转状况变化26-36 (0:保养计数到停机 1:不停)26-37 (0:载体计数到停机 1:不停)26-38 光鼓超寿命停止设定（0停机 1不停机）26-39 内存容量检测(16:16M内存 32:32M内存)26-42 转印时间调整（R系列:1：240MS 3：260MS 9：320MS）(M系列机子取值1-99 默认值50)26-43 上下端空白设置(自动灯表下端,手动灯表上端)26-50 黑白转换功能设定（0：可转 1：不可转）26-51 复印机暂停功能设定（0：不停 1：停）26-60 未装载FAX时，设定FAX模式键是否有效27-1 设定有元PC／调制解调器的通信故障27-5 输入机器的机号30-1 确认本体传感器动作30-2 确认给纸部的传感、检测器及相关回路的动作40-1 确认手动托盘的纸张尺寸检测器及相关回路的动作41-2 调整OC原稿检测传感器41-3 原稿检测传感器受光电平显示41-4 OC盖板20度时的检测电平调整42-1 载体记数清除43-1 定影温度设定（倍率键调）43-10 明信片纸张进纸周期设置(取值1-99)43-11 明信片纸定影温度设置43-12 待机模式定影风扇转动设置(0:低速1:高速)43-13 定影纸张间隙控制(0:禁止1:允许)44-34 转印电流设定44-40 墨粉补充前转动时间设置(取值1-99)46-1 复印浓度300dpi电平调整46-2 复印曝光600dpi浓度等级调整46-7 分别调整复印曝光浓度等级（超级照片）46-9 复印浓度等级单独调整手动300dpi等级（文字）46-10 复印浓度等级单独调整手动600dpi（文字／照片）46-11 复印浓度等级单独调整（照片）46-18 复印对比度调整300dpi46-19 曝光时的图像质量调整46-20 SPF的曝光浓度校正46-29 复印对比度调整600dpi46-30 进行AE设定(取值0-30)46-31 图像锐度调整(0:黑白校正2:清晰)46-39 调整传真模式对比度46-45 调整传真模式的图像浓度48-1 主（前后）扫描方向倍率调整48-2 复印时OC方式副扫描方向倍率调整48-3 自动调整前端．副扫描倍率48-5 复印时SPF方式副扫描方向倍率调整49-1 FLASH ROM程序写入模式50-1 复印画像位置调整（左右方向，值加减1移动0.127MM）50-5 调整图像先端位置50-6 调整复印模式SPF／RSPF原稿图像位置50-10 用纸中心偏移调整(上下方向)50-12 调整复印模式原稿图像中心位置50-13 OC方式原稿中心偏50-16 SPF方式原稿中心偏听偏信移调整50-18 双面复印时反面图像位置调整50-19 双面复印时后端空白调整51-02 对位量调整51-8 设定禁止感光鼓分离爪动作53-8 SPF扫描位置调整61-1 检测LSU的动作61-2 调复印模式激光功率（绝对值）61-3 六棱镜电机检测62-1 格式化硬盘62-3 检测硬盘读写操作62-8 格式化硬盘（除系统数据区域）62-10 删除完成作业列表（同时删除作业日志）63-1 确认黑白校正数据63-2 执行黑白校正63-7 自动调整SPF白校正开始的像素位置64-1 自我打印功能65-5 进行操作面板的检测66-22 调传真听筒音量66-23 下载传真程序66-24 清除传真数据内存66-39 设定发货地规格66-60 设定ACR数据67-11 用于设定“select-in“信号67-14 进行flash programs写入／比较检测67-17 进行NVROM的清除67-18 清除FLASH ROM 的Network Scanner Application(网络扫描应用软件)用数据区域67-20 装载网络扫描组件时，检测网络连接56-1 传送MFP控制器数据。

夏普复印机

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船舶规范中英文对照

船舶规范-中英对照、CARGO GEAR: d文，wen，从玄从爻。

天地万物的信息产生出来的现象、纹路、轨迹，描绘出了阴阳二气在事物中的运行轨迹和原理。

故文即为符。

上古之时，符文一体。

古者伏羲氏之王天下也，始画八卦，造书契，以代结绳(爻)之政，由是文籍生焉。

--《尚书序》依类象形，故谓之文。

其后形声相益，即谓之字。

--《说文》序》仓颉造书，形立谓之文，声具谓之字。

--《古今通论》(1) 象形。

甲骨文此字象纹理纵横交错形。

"文"是汉字的一个部首。

本义:花纹;纹理。

(2) 同本义[figure;veins]文，英语念为:text、article等，从字面意思上就可以理解为文章、文字，与古今中外的各个文学著作中出现的各种文字字形密不可分。

古有甲骨文、金文、小篆等，今有宋体、楷体等，都在这一方面突出了"文"的重要性。

古今中外，人们对于"文"都有自己不同的认知，从大的方面来讲，它可以用于表示一个民族的文化历史，从小的方面来说它可用于用于表示单独的一个"文"字，可用于表示一段话，也可用于人物的姓氏。

折叠编辑本段基本字义1．事物错综所造成的纹理或形象：灿若～锦。

2.刺画花纹：～身。

3．记录语言的符号：～字。

～盲。

以～害辞。

4．用文字记下来以及与之有关的：～凭。

～艺。

～体。

～典。

～苑。

～献（指有历史价值和参考价值的图书资料）。

～采（a．文辞、文艺方面的才华；b．错杂艳丽的色彩）。

5．人类劳动成果的总结：～化。

～物。

6．自然界的某些现象：天～。

水～。

7．旧时指礼节仪式：虚～。

繁～缛节（过多的礼节仪式）。

8．文华辞采，与“质”、“情”相对：～质彬彬。

9．温和：～火。

～静。

～雅。

10．指非军事的：～职。

～治武功（指礼乐教化和军事功绩）。

11．指以古汉语为基础的书面语：552～言。

～白间杂。

12．专指社会科学：～科。

13．掩饰：～过饰非。

14．量词，指旧时小铜钱：一～不名。

Elite M24L416256SA 4Mbit PSRAM 产品说明书

Elite Semiconductor Memory Technology Inc. Publication Date : Jul. 2008PSRAM4-Mbit (256K x 16) Pseudo Static RAMFeatures• Wide voltage range: 2.7V–3.6V • Access time: 55 ns, 60 ns and 70 ns • Ultra-low active power— Typical active current: 1 mA @ f = 1 MHz— Typical active current: 8 mA @ f = fmax (70-ns speed) • Ultra low standby power• Automatic power-down when deselected • CMOS for optimum speed/powerFunctional DescriptionThe M24L416256SA is a high-performance CMOS Pseudo static RAM organized as 256K words by 16 bits that supports an asynchronous memory interface. This device features advanced circuit design to provide ultra-low active current. This is ideal for portable applications such as cellular telephones. The device can be put into standby mode when deselected (CE HIGH or both BHE and BLE are HIGH).The input/output pins (I/O0through I/O 15) are placed in a high-impedance state when : deselected (CE HIGH), outputs are disabled (OE HIGH), both Byte High Enable and Byte Low Enable are disabled (BHE ,BLE HIGH), or during a write operation (CE LOW and WE LOW).Writing to the device is accomplished by taking Chip Enable(CE LOW) and Write Enable (WE ) input LOW. If Byte Low Enable (BLE ) is LOW, then data from I/O pins (I/O 0 through I/O 7) is written into the location specified on the address pins(A 0 through A 17). If Byte High Enable (BHE ) is LOW, then data from I/O pins (I/O 8 through I/O 15) is written into the location specified on the address pins (A 0 through A 17).Reading from the device is accomplished by taking Chip Enable (CE LOW) and Output Enable (OE ) LOW while forcing the Write Enable (WE ) HIGH. If Byte Low Enable (BLE ) is LOW, then data from the memory location specified by the address pins will appear on I/O 0 to I/O 7. If Byte High Enable(BHE ) is LOW, then data from memory will appear on I/O 8toI/O 15. Refer to the truth table for a complete description of read and write modes.Logic Block DiagramElite Semiconductor Memory Technology Inc. Publication Date : Jul. 2008Pin Configuration[2, 3, 4]44-pin TSOPIIElite Semiconductor Memory Technology Inc. Publication Date : Jul. 2008Product PortfolioPower DissipationOperating, I CC (mA) V CC Range(V)f = 1 MHzf = fmaxStandby, I SB2 (µA)ProductMin. Typ.[5] Max.Speed (ns)Typ.[5] Max. Typ.[5] Max. Typ.[5]Max.556014 22M24L416256SA 2.73.0 3.6 701 5 8 1517 40Notes:2. Ball H1, G2 and ball H6 for the VFBGA package can be used to upgrade to an 8-Mbit, 16-Mbit and 32-Mbit density, respectively.3. NC “no connect” – not connected internally to the die.4. DNU (Do Not Use) pins have to be left floating or tied to Vss to ensure proper application.5. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at V CC = VCC(typ.), T A = 25°C.Elite Semiconductor Memory Technology Inc. Publication Date : Jul. 2008Maximum Ratings(Above which the useful life may be impaired. For user guide-lines, not tested.)Storage Temperature .................................–65°C to +150°C Ambient Temperature withPower Applied ..............................................–55°C to +125°C Supply Voltage to Ground Potential ................−0.4V to 4.6V DC Voltage Applied to Outputsin High-Z State[6, 7, 8] .......................................−0.4V to 3.7V DC Input Voltage[6, 7, 8] ....................................−0.4V to 3.7V Output Current into Outputs (LOW) ............................20 mA Static Discharge Voltage ......................................... > 2001V (per MIL-STD-883, Method 3015)Latch-up Current ....................................................> 200 mAOperating RangeRange Ambient Temperature (T A )V CC Extended −25°C to +85°C 2.7V to 3.6V Industrial−40°C to +85°C2.7V to3.6VThermal Resistance[9]Parameter DescriptionTest Conditions VFBGAUnitθJA Thermal Resistance (Junction to Ambient) 55 °C/W θJCThermal Resistance (Junction to Case)Test conditions follow standard testmethods and procedures for measuring thermal impedance, per EIA/JESD51.17°C/WCapacitance[9] Parameter DescriptionTest Conditions Max. UnitC IN Input Capacitance 8 pF C OUTOutput Capacitance T A = 25°C, f = 1 MHz V CC = V CC(typ) 8 pFNotes:6.V IL(MIN) = –0.5V for pulse durations less than 20 ns.7.V IH(Max) = V CC + 0.5V for pulse durations less than 20 ns.8.Overshoot and undershoot specifications are characterized and are not 100% tested.9.Tested initially and after any design or process changes that may affect these parameters.AC Test Loads and WaveformsV CC Unit Parameters 3.0VR1 22000 ΩR2 22000 ΩR TH 11000 ΩV TH 1.50 V Switching Characteristics (Over the Operating Range)[10]Notes:10. Test conditions for all parameters other than tri-state parameters assume signal transition time of 1 ns/V, timing referencelevels of V CC(typ)/2, input pulse levels of 0V to V CC(typ.), and output loading of the specified I OL/I OH as shown in the “AC TestLoads and Waveforms” section.11. t HZOE, t HZCE, t HZBE, and t HZWE transitions are measured when the outputs enter a high impedance state.12. The internal Write time of the memory is defined by the overlap of WE, CE = V IL, BHE and/or BLE = V IL. All signalsmust be ACTIVE to initiate a write and any of these signals can terminate a write by going INACTIVE. The data input set-upand hold timing should be referenced to the edge of the signal that terminates the write.13. High-Z and Low-Z parameters are characterized and are not 100% tested.14. To achieve 55-ns performance, the read access should be CE controlled. In this case t ACE is the critical parameter and t SK issatisfied when the addresses are stable prior to chip enable going active. For the 70-ns cycle, the addresses must be stablewithin 10 ns after the start of the read cycle.Elite Semiconductor Memory Technology Inc.Publication Date: Jul. 2008Elite Semiconductor Memory Technology Inc. Publication Date : Jul. 2008Switching Characteristics (Over the Operating Range)[10] (continued)Switching WaveformsRead Cycle 1 (Address Transition Controlled)[14, 15, 16]Read Cycle 2 (OE Controlled)[14, 16]Notes:15.Device is continuously selected. OE , CE = V IL . 16.WE is HIGH for Read Cycle.Elite Semiconductor Memory Technology Inc. Publication Date : Jul. 2008Write Cycle 1 (WE Controlled)[12, 13, 17, 18, 19]Write Cycle 2 (CE Controlled)[12, 13, 17, 18, 19]Notes:17.Data I/O is high-impedance if OE ≥ V IH .18.If Chip Enable goes INACTIVE with WE =V IH , the output remains in a high-impedance state. 19.During this period in the DATA I/O waveform, the I/Os could be in the output state and input signals should not be applied.Elite Semiconductor Memory Technology Inc. Publication Date : Jul. 2008Write Cycle 3 (WEControlled, OE LOW)[18, 19]Write Cycle 4 (BHE /BLEControlled, OE LOW)[18,19]Elite Semiconductor Memory Technology Inc. Publication Date : Jul. 2008Avoid TimingESMT Pseudo SRAM has a timing which is not supported at read operation, If your system has multiple invalid address signal shorter than t RC during over 15μs at read operation shown as in Abnormal Timing, it requires a normal read timing at leat during 15μs shown as in Avoidable timing 1 or toggle CE to high (≧t RC ) one time at least shown as in Avoidable Timing 2.Abnormal TimingAvoidable Timing 1Avoidable Timing 2CEWEAddressCEWEAddressCEWEAddressTruth Table[20]Ordering InformationSpeed (ns) Ordering Code Package Type Operating Range55 M24L416256SA-55BEG 48-ball Very Fine Pitch BGA (6.0 x 8.0 x 1.0 mm) (Pb-Free) Extended60 M24L416256SA-60BEG 48-ball Very Fine Pitch BGA (6.0 x 8.0 x 1.0 mm) (Pb-Free) Extended70 M24L416256SA-70BEG 48-ball Very Fine Pitch BGA (6.0 x 8.0 x 1.0 mm) (Pb-Free) Extended55 M24L416256SA-55TEGTSOPII (Pb-Free) Extended44-pinTSOPII (Pb-Free) Extended60 M24L416256SA-60TEG44-pin44-pinTSOPII (Pb-Free) Extended70 M24L416256SA-70TEG55 M24L416256SA-55BIG 48-ball Very Fine Pitch BGA (6.0 x 8.0 x 1.0 mm) (Pb-Free) Industrial60 M24L416256SA-60BIG 48-ball Very Fine Pitch BGA (6.0 x 8.0 x 1.0 mm) (Pb-Free) Industrial70 M24L416256SA-70BIG 48-ball Very Fine Pitch BGA (6.0 x 8.0 x 1.0 mm) (Pb-Free) IndustrialTSOPII (Pb-Free) Industrial44-pin55 M24L416256SA-55TIGTSOPII (Pb-Free) Industrial60 M24L416256SA-60TIG44-pin44-pinTSOPII (Pb-Free) Industrial70 M24L416256SA-70TIGNote :20. H = Logic HIGH, L = Logic LOW, X = Don’t Care.Elite Semiconductor Memory Technology Inc.Publication Date: Jul. 2008Package Diagram48-ball VFBGA (6 x 8 x 1 mm)Elite Semiconductor Memory Technology Inc.Publication Date: Jul. 2008Elite Semiconductor Memory Technology Inc.Publication Date: Jul. 2008Elite Semiconductor Memory Technology Inc. Publication Date : Jul. 2008Revision HistoryRevision DateDescription1.0 2007.07.04 Original 1.12007.09.10Modify Vcc (max) =3.3V to 3.6V1.2 2008.02.271. Add 44-pin TSOPII package2. Add Avoid timing 1.32008.03.24Add I-grade for TSOPII package1.4 2008.07.041. Move Revision History to the last2. Add Industrial grade for BGA packageImportant NoticeAll rights reserved.No part of this document may be reproduced or duplicated in any form or by any means without the prior permission of ESMT.The contents contained in this document are believed to be accurate at the time of publication.ESMT assumes no responsibility for any error in this document, and reserves the right to change the products or specification in this document without notice.The information contained herein is presented only as a guide or examples for the application of our products. No responsibility is assumed by ESMT for any infringement of patents, copyrights, or other intellectual property rights of third parties which may result from its use. No license, either express , implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of ESMT or others.Any semiconductor devices may have inherently a certain rate of failure. To minimize risks associated with customer's application, adequate design and operating safeguards against injury, damage, or loss from such failure, should be provided by the customer when making application designs.ESMT's products are not authorized for use in critical applications such as, but not limited to, life support devices or system, where failure or abnormal operation may directly affect human lives or cause physical injury or property damage. If products described here are to be used for such kinds of application, purchaser must do its own quality assurance testing appropriate to such applications.Elite Semiconductor Memory Technology Inc.Publication Date: Jul. 2008。

FUJITSU PRIMERGY RX2530 M4 双处理器1U机架式服务器数据表说明书

Datasheet FUJITSU PRIMERGY RX2530 M4 雙處理器1U 機架式伺服器Data SheetFUJITSU PRIMERGY RX2530 M4 雙處理器 1U 機架式伺服器僅需 1U 空間，可帶來最大的生產力特性與優勢技術規格PRIMERGY RX2530 M4機型PRIMERGY RX2530 M4LFF PRIMERGY RX2530 M4SFFPRIMERGY RX2530 M4SFFPRIMERGY RX2530 M4 SFF類型機架式機架式機架式機架式儲存磁碟架構4x 3.5 吋SAS/SATA4x 2.5 吋SAS/SATA8x 2.5 吋SAS/SATA10x2.5 吋SAS/SATA/PCIe/NVMe電源供應器熱插拔熱插拔熱插拔熱插拔產品型態雙處理器機架式伺服器雙處理器機架式伺服器雙處理器機架式伺服器雙處理器機架式伺服器主機板主機板型號D3383晶片組Intel® C624處理器數量與種類 1 - 2 x Intel® Xeon® Processor Scalable FamilyIntel® Xeon® Bronze Processor Intel® Xeon® Bronze 3104 (6C nHT, 1.70 GHz, TLC: 8.25 MB, Turbo: 1.70 GHz, 9.6 GT/s, Mem bus: 2,133MHz, 85 W, AVX Base 1.30 GHz, AVX Turbo 1.30 GHz)Intel® Xeon® Bronze 3106 (8C nHT, 1.70 GHz, TLC: 11 MB, Turbo: 1.70 GHz, 9.6 GT/s, Mem bus: 2,133MHz, 85 W, AVX Base 1.30 GHz, AVX Turbo 1.30 GHz)Intel® Xeon® Silver Processor Intel® Xeon® Silver 4108 (8C, 1.80 GHz, TLC: 11 MB, Turbo: 2.10 GHz, 9.6 GT/s, Mem bus: 2,400 MHz, 85W, AVX Base 1.30 GHz, AVX Turbo 1.30 GHz)Intel® Xeon® Silver 4110 (8C, 2.10 GHz, TLC: 11 MB, Turbo: 2.40 GHz, 9.6 GT/s, Mem bus: 2,400 MHz, 85W, AVX Base 1.70 GHz, AVX Turbo 2.10 GHz)Intel® Xeon® Silver 4112 (4C, 2.60 GHz, TLC: 8.25 MB, Turbo: 2.90 GHz, 9.6 GT/s, Mem bus: 2,400 MHz,85 W, AVX Base 2.20 GHz, AVX Turbo 2.60 GHz)Intel® Xeon® Silver 4114 (10C, 2.20 GHz, TLC: 13.75 MB, Turbo: 2.50 GHz, 9.6 GT/s, Mem bus: 2,400 MHz,85 W, AVX Base 1.80 GHz, AVX Turbo 2.20 GHz)Intel® Xeon® Silver 4114T (10C, 2.20 GHz, TLC: 13.75 MB, Turbo: 2.50 GHz, 9.6 GT/s, Mem bus: 2,400MHz, 85 W, AVX Base 1.80 GHz, AVX Turbo 2.20 GHz)Intel® Xeon® Silver 4116 (12C, 2.10 GHz, TLC: 16.5 MB, Turbo: 2.40 GHz, 9.6 GT/s, Mem bus: 2,400 MHz,85 W, AVX Base 1.70 GHz, AVX Turbo 2.10 GHz)Intel® Xeon® Gold Processor Intel® Xeon® Gold 5115 (10C, 2.40 GHz, TLC: 13.75 MB, Turbo: 2.80 GHz, 10.4 GT/s, Mem bus: 2,400MHz, 85 W, AVX Base 2.00 GHz, AVX Turbo 2.40 GHz)Intel® Xeon® Gold 5118 (12C, 2.30 GHz, TLC: 16.5 MB, Turbo: 2.70 GHz, 10.4 GT/s, Mem bus: 2,400 MHz,105 W, AVX Base 1.90 GHz, AVX Turbo 2.30 GHz)Intel® Xeon® Gold 5119T (14C, 1.90 GHz, TLC: 19.25 MB, Turbo: 2.30 GHz, 10.4 GT/s, Mem bus: 2,400MHz, 85 W, AVX Base 1.50 GHz, AVX Turbo 1.90 GHz)Intel® Xeon® Gold 5120 (14C, 2.20 GHz, TLC: 19.25 MB, Turbo: 2.60 GHz, 10.4 GT/s, Mem bus: 2,400MHz, 105 W, AVX Base 1.80 GHz, AVX Turbo 2.20 GHz)Intel® Xeon® Gold 5122 (4C, 3.60 GHz, TLC: 16.5 MB, Turbo: 3.70 GHz, 10.4 GT/s, Mem bus: 2,667 MHz,105 W, AVX Base 3.30 GHz, AVX Turbo 3.60 GHz)Intel® Xeon® Gold 6126 (12C, 2.60 GHz, TLC: 19.25 MB, Turbo: 3.30 GHz, 10.4 GT/s, Mem bus: 2,667MHz, 125 W, AVX Base 2.20 GHz, AVX Turbo 2.90 GHz)Intel® Xeon® Gold 6128 (6C, 3.40 GHz, TLC: 19.25 MB, Turbo: 3.70 GHz, 10.4 GT/s, Mem bus: 2,667 MHz,115 W, AVX Base 2.90 GHz, AVX Turbo 3.60 GHz)Intel® Xeon® Gold 6130 (16C, 2.10 GHz, TLC: 22 MB, Turbo: 2.80 GHz, 10.4 GT/s, Mem bus: 2,667 MHz,125 W, AVX Base 1.70 GHz, AVX Turbo 2.40 GHz)Intel® Xeon® Gold 6132 (14C, 2.60 GHz, TLC: 19.25 MB, Turbo: 3.30 GHz, 10.4 GT/s, Mem bus: 2,667MHz, 140 W, AVX Base 2.20 GHz, AVX Turbo 2.90 GHz)Intel® Xeon® Gold 6134 (8C, 3.20 GHz, TLC: 24.75 MB, Turbo: 3.70 GHz, 10.4 GT/s, Mem bus: 2,667 MHz,130 W, AVX Base 2.70 GHz, AVX Turbo 3.40 GHz)Intel® Xeon® Gold 6134M (8C, 3.20 GHz, TLC: 24.75 MB, Turbo: 3.70 GHz, 10.4 GT/s, Mem bus: 2,667MHz, 130 W, AVX Base 2.70 GHz, AVX Turbo 3.40 GHz)Intel® Xeon® Gold 6136 (12C, 3.00 GHz, TLC: 24.75 MB, Turbo: 3.30 GHz, 10.4 GT/s, Mem bus: 2,667MHz, 150 W, AVX Base 2.60 GHz, AVX Turbo 3.30 GHz)Intel® Xeon® Gold 6138 (20C, 2.00 GHz, TLC: 27.5 MB, Turbo: 2.70 GHz, 10.4 GT/s, Mem bus: 2,667 MHz,125 W, AVX Base 1.60 GHz, AVX Turbo 2.30 GHz)Intel® Xeon® Gold 6140 (18C, 2.30 GHz, TLC: 24.75 MB, Turbo: 3.00 GHz, 10.4 GT/s, Mem bus: 2,667MHz, 140 W, AVX Base 1.90 GHz, AVX Turbo 2.60 GHz)Intel® Xeon® Gold 6140M (18C, 2.30 GHz, TLC: 24.75 MB, Turbo: 3.00 GHz, 10.4 GT/s, Mem bus: 2,667MHz, 140 W, AVX Base 1.90 GHz, AVX Turbo 2.60 GHz)Intel® Xeon® Gold 6142 (16C, 2.60 GHz, TLC: 22 MB, Turbo: 3.30 GHz, 10.4 GT/s, Mem bus: 2,667 MHz,150 W, AVX Base 2.20 GHz, AVX Turbo 2.90 GHz)Intel® Xeon® Gold 6142M (16C, 2.60 GHz, TLC: 22 MB, Turbo: 3.30 GHz, 10.4 GT/s, Mem bus: 2,667 MHz,150 W, AVX Base 2.20 GHz, AVX Turbo 2.90 GHz)Intel® Xeon® Gold 6144 (8C, 3.50 GHz, TLC: 24.75 MB, Turbo: 4.10 GHz, 10.4 GT/s, Mem bus: 2,666 MHz,150 W, AVX Base 2.80 GHz, AVX Turbo 3.50 GHz)Intel® Xeon® Gold 6146 (12C, 3.20 GHz, TLC: 24.75 MB, Turbo: 3.90 GHz, 10.4 GT/s, Mem bus: 2,666MHz, 165 W, AVX Base 2.60 GHz, AVX Turbo 3.30 GHz)Intel® Xeon® Gold 6148 (20C, 2.40 GHz, TLC: 27.5 MB, Turbo: 3.10 GHz, 10.4 GT/s, Mem bus: 2,667 MHz,150 W, AVX Base 1.90 GHz, AVX Turbo 2.60 GHz)Intel® Xeon® Gold 6150 (18C, 2.70 GHz, TLC: 24.75 MB, Turbo: 3.40 GHz, 10.4 GT/s, Mem bus: 2,667MHz, 165 W, AVX Base 2.30 GHz, AVX Turbo 3.00 GHz)Intel® Xeon® Gold 6152 (22C, 2.10 GHz, TLC: 30.25 MB, Turbo: 2.80 GHz, 10.4 GT/s, Mem bus: 2,667MHz, 140 W, AVX Base 1.70 GHz, AVX Turbo 2.40 GHz)Intel® Xeon® Gold 6154 (18C, 3.00 GHz, TLC: 24.75 MB, Turbo: 3.70 GHz, 10.4 GT/s, Mem bus: 2,667MHz, 200 W, AVX Base 2.60 GHz, AVX Turbo 3.30 GHz)Intel® Xeon® Platinum Processor Intel® Xeon® Platinum 8153 (16C, 2.00 GHz, TLC: 22 MB, Turbo: 2.30 GHz, 10.4 GT/s, Mem bus: 2,667MHz, 125 W, AVX Base 1.60 GHz, AVX Turbo 2.00 GHz)Intel® Xeon® Platinum 8160 (24C, 2.10 GHz, TLC: 33 MB, Turbo: 2.80 GHz, 10.4 GT/s, Mem bus: 2,667MHz, 150 W, AVX Base 1.80 GHz, AVX Turbo 2.50 GHz)Intel® Xeon® Platinum 8160M (24C, 2.10 GHz, TLC: 33 MB, Turbo: 2.80 GHz, 10.4 GT/s, Mem bus: 2,667MHz, 150 W, AVX Base 1.80 GHz, AVX Turbo 2.50 GHz)Intel® Xeon® Platinum 8164 (26C, 2.00 GHz, TLC: 35.75 MB, Turbo: 2.70 GHz, 10.4 GT/s, Mem bus: 2,667MHz, 150 W,AVX Base 1.60 GHz, AVX Turbo 2.30 GHz)Intel® Xeon® Platinum 8168 (24C, 2.70 GHz, TLC: 33 MB, Turbo: 3.40 GHz, 10.4 GT/s, Mem bus: 2,667MHz, 205 W,AVX Base 2.30 GHz, AVX Turbo 3.00 GHz)Intel® Xeon® Platinum 8170 (26C, 2.10 GHz, TLC: 35.75 MB, Turbo: 2.80 GHz, 10.4 GT/s, Mem bus: 2,667MHz, 165 W,AVX Base 1.70 GHz, AVX Turbo 2.40 GHz)Intel® Xeon® Platinum 8170M (26C, 2.10 GHz, TLC: 35.75 MB, Turbo: 2.80 GHz, 10.4 GT/s, Mem bus:2,667 MHz, 165W, AVX Base 1.70 GHz, AVX Turbo 2.40 GHzIntel® Xeon® Platinum 8176 (28C, 2.10 GHz, TLC: 38.5 MB, Turbo: 2.80 GHz, 10.4 GT/s, Mem bus: 2,667MHz, 165 W,AVX Base 1.70 GHz, AVX Turbo 2.40 GHz)Intel® Xeon® Platinum 8176M (28C, 2.10 GHz, TLC: 38.5 MB, Turbo: 2.80 GHz, 10.4 GT/s, Mem bus:2,667 MHz, 165W, AVX Base 1.70 GHz, AVX Turbo 2.40 GHz)Intel® Xeon® Platinum 8180 (28C, 2.50 GHz, TLC: 38.5 MB, Turbo: 3.20 GHz, 10.4 GT/s, Mem bus: 2,667MHz, 205 W,AVX Base 1.70 GHz, AVX Turbo 2.30 GHz)Intel® Xeon® Platinum 8180M (28C, 2.50 GHz, TLC: 38.5 MB, Turbo: 3.20 GHz, 10.4 GT/s, Mem bus:2,667 MHz, 205W, AVX Base 1.70 GHz, AVX Turbo 2.30 GH記憶體插槽24 (每顆 CPU 6 個通道，每通道 2 個插槽，共 12 個 DIMM)記憶體插槽類型DIMM (DDR4)記憶體容量(最小-最大) 8 GB - 3072 GB記憶體保護高級ECC記憶體擦除SDDC支援Rank sparing memory支援Memory Mirroring記憶體說明Memory Mirroring 需在兩通道中的記憶體庫中有相同的一對記憶體模組(每記憶體庫有 6 個模組),Rank sparing 或 Performance Mode 需在六個通道中有相同的記憶體模組記憶體選項8 GB (1 module(s) 8 GB) DDR4, registered, ECC, 2,666 MHz, PC4-2666, DIMM, 1Rx48 GB (1 module(s) 8 GB) DDR4, registered, ECC, 2,666 MHz, PC4-2666, DIMM, 1Rx88 GB (1 module(s) 8 GB) DDR4, registered, ECC, 2,666 MHz, PC4-2666, DIMM, 2Rx816 GB (1 module(s) 16 GB) DDR4, registered, ECC, 2,666 MHz, PC4-2666, DIMM, 1Rx416 GB (1 module(s) 16 GB) DDR4, registered, ECC, 2,666 MHz, PC4-2666, DIMM, 2Rx416 GB (1 module(s) 16 GB) DDR4, registered, ECC, 2,666 MHz, PC4-2666, DIMM, 2Rx832 GB (1 module(s) 32 GB) DDR4, registered, ECC, 2,666 MHz, PC4-2666, DIMM, 2Rx464 GB (1 module(s) 64 GB) DDR4 3DS, registered, ECC, 2,666 MHz, PC4-2666, DIMM, 4Rx464 GB (1 module(s) 64 GB) DDR4, registered, ECC, 2,666 MHz, PC4-2666, LRDIMM, 4Rx4128 GB (1 module(s) 128 GB) DDR4 3DS, registered, ECC, 2,666 MHz, PC4-2666, DIMM, 8Rx4介面USB 3.0 埠5x USB 3.0 埠 (2x 前方, 2x 後方, 1x 內部)10x2.5 吋機型只有 1x USB2.0 位於前方顯卡(15 針) 2 x VGA (其中一個選配於前方,不支援基座為10x2.5 吋機型)串列1(9 針) 1 選配 (將佔用 PCIe slot)管理LAN(RJ45) 1 x iRMC S5 專用管理 LAN 埠 (10/100/1000 Mbit/s)管理埠流量可切換至共用的內建 LAN 控制器連接埠, 速度及連接介面與前述介面卡有關內建或整合控制器RAID 控制器硬體儲存控制器選項請參考「組件」中說明SATA 控制器Intel® C624, 1 x SATA ODD 用 SATA 通道內建或整合控制器LAN 控制器Intel® C6242 x 1 Gbit/s onboard可選配DynamicLoM OCP adaptors:4 x 1 Gbit/s Ethernet (RJ45)2 x 10 Gbit/s Ethernet (RJ45)2 x 10 Gbit/s SFP+4 x 10 Gbit/s SFP+所有支援特性已於相關系統配置中描述Wake-on-LAN supported on onboard Port 1 and 2.PXE-Boot via LAN from PXE server, iSCSI / FCoE boot (also diskless).額外的 LAN controller(PCIe Cards) 如下表所列。

富士通 PRIMERGY CX2550 M2 雙處理器伺服器節點说明书

DatasheetFujitsu PRIMERGY CX2550 M2 雙處理器伺服器節點PRIMERGY CX400 M1多節點伺服器系統適用之伺服器節點FUJITSU PRIMERGY 伺服器提供給各種規模、產業、工作負載的公司最強而有力且即具彈性的解決方案。

包含遠端分公司適用的PRIMERGY塔式伺服器、萬用的機架式伺服器、簡潔且具擴張性的刀鋒伺服器，以及密度最佳化的橫向擴展伺服器。

具備一系列經商業考驗的創新及最高效率，降低了營運的成本與複雜性，讓日常營運更靈活，也使得IT更快地成為商業優勢。

FUJITSU PRIMERGY CX 橫向擴展伺服器系統是雲端、超融合、高效能運算的理想解決方案。

它為資料中心以及分公司提供強大的運算效能，適合虛擬環境、複雜運算、伺服器整合及高可用性等使用情境。

PRIMERGY CX2550 M2PRIMERGY CX2550 M2是一小型的伺服器節點，在2U空間內可有多達四個互相獨立的伺服器，達到最高的運算密度。

它適合雲端、叢集以及高效能運算的伺服器群，亦適合大數據環境。

搭配PRIMERGY CX400 M1多結點伺器系統，CX2550M2提供多達8顆最新Intel®Xeon® E5-2600 v4處理器、64條DDR4記憶體，以及多達24顆硬碟整合的橫向擴展效能—僅在2U的空間裡。

它具有強大的效能、極高的能源效率，合宜的投資成本，適合各式各樣非凡的工作負載。

高端HPC伺服器節點■四個PRIMERGY CX2550 M2伺服器節點，每個搭載兩個處理器■16條DDR4記憶體模組，以及多達6個本地儲存磁碟，一切僅需一個簡潔的2U機架式機箱。

■與同類標準機架式伺服器相比，使用的機架空間減少了50%。

更高的伺服器密度提高了每機架單位的性能。

■以4個簡潔型兩路伺服器為單位，做橫向擴展。

最新Intel®Xeon®處理器E5-2600 v4產品系列■可搭載兩顆Intel® Xeon® E5-2600 v4 處理器產品系列，每顆高達22核心、55MB的快取記憶體，進階的Turbo Boost 2.0技術、Hyper Threading，兩個加速的QPI連結以及內部記憶體管理模組。

VSP2566PTG4资料

P R O D U C T P R E V I E WFEATURESDESCRIPTIONVSP2560VSP2562VSP2566 SBES008–AUGUST 2008CCD ANALOG FRONT-END FOR DIGITAL CAMERAS•CCD Signal Processing:The VSP2560/62/66are a family of complete mixed-signal processing ICs for digital cameras that –36-MHz Correlated Double Sampling (CDS)provide correlated double sampling (CDS)and •Output Resolution:analog-to-digital conversion for the output of CCD –VSP2560(10-Bit)arrays.The CDS extracts the pixel video information –VSP2562(12-Bit)from the CCD signal,and the analog-to-digital converter (ADC)converts the digital signal.For –VSP2566(16-Bit)varying illumination conditions,a very stable gain •16-Bit Analog-to-Digital Conversion:control of –9dB to 44dB is provided.The gain –36-MHz Conversion Rate control is linear in dB.Input signal clamping and offset correction of the input CDS are also provided.–No Missing Codes Ensured•80-dB Input-Referred SNR (at Gain =12dB)Offset correction is performed by the optical black (OB)level calibration loop,and is held in calibrated •Programmable Black Level Clamping black level clamping for an accurate black level •Programmable Gain Amp (PGA):reference.Additionally,the black level is quickly ––9dB to +44dBrecovered after gain changes.The VSP2560/62/66are available in LQFP-48packages and operate from ––3dB to +18dB (Analog Front Gain)single +3V supplies.––6dB to +26dB (Digital Gain)•Portable Operation:–Low Voltage:2.7V to 3.6V–Low Power:86mW at 3.0V,36MHz –Low Power:6mW (Standby Mode)•Two-Channel,General-Purpose,8-Bit DAC •QFP-48PackageFEATURE COMPARISON BY DEVICETRANSFER CHARACTERISTICS(LSB)OB CLAMP LOOP (LSB)RESOLUTIONPROGRAMMABLEOBCLP DEVICE (Bits)DNL INL RANGELEVEL OB LEVELVSP256010±0.5±116to 78322VSP256212±0.5±264to 3121288VSP256616±2±321024to 49922048128Please be aware that an important notice concerning availability,standard warranty,and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.All trademarks are the property of their respective owners.PRODUCT PREVIEW information concerns products in the Copyright ©2008,Texas Instruments Incorporatedformative or design phase of development.Characteristic data andPRODUCT PREVIEWABSOLUTE MAXIMUM RATINGS (1)VSP2560VSP2562VSP2566SBES008–AUGUST This integrated circuit can be damaged by ESD.Texas Instruments recommends that all integrated circuits be handled with appropriate precautions.Failure to observe proper handling and installation procedures can cause damage.ESD damage can range from subtle performance degradation to complete device failure.Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.ORDERING INFORMATION (1)SPECIFIED PACKAGE-PACKAGE TEMPERATUREPACKAGE ORDERING TRANSPORT MEDIA,PRODUCT LEAD DESIGNATORRANGE MARKING NUMBER QUANTITY VSP2560PT Tray,250Pieces VSP2560QFP-48PT –25°C to +85°C VSP2560VSP2560PTR Tape and Reel VSP2562PT Tray,250Pieces VSP2562QFP-48PT –25°C to +85°C VSP2562VSP2562PTR Tape and Reel VSP2566PT Tray,250Pieces VSP2566QFP-48PT–25°C to +85°CVSP2566VSP2566PTRTape and Reel(1)For the most current package and ordering information see the Package Option Addendum at the end of this document,or see the TI web site at .Over operating free-air temperature range,unless otherwise noted.VSP2560,VSP2562,VSP2566UNIT Supply voltage (VCC,VDD)+4V Supply voltage differences (among VCC pins)±0.1V Ground voltage differences (AGND,DGND)±0.1V Digital input voltage –0.3to (VCC +0.3)V Analog input voltage–0.3to (VCC +0.3)V Input current (all pins except supplies)±10mA Ambient temperature under bias –25to +85°C Storage temperature –55to +125°C Junction temperature+150°C Package temperature (IR reflow,peak)+260°C(1)Stresses above these ratings may cause permanent damage.Exposure to absolute maximum conditions for extended periods may degrade device reliability.These are stress ratings only,and functional operation of the device at these or any other conditions beyond those specified is not implied.2Submit Documentation Feedback Copyright ©2008,Texas Instruments IncorporatedP R O D U C T P R E V I E WELECTRICAL CHARACTERISTICS:VSP2560VSP2560VSP2562VSP2566 SBES008–AUGUST 2008All specifications at T A =+25°C,all power-supply voltages =+3.0V,and conversion rate =36MHz,no load,unless otherwise noted.VSP2560PTPARAMETERTEST CONDITIONSMINTYPMAXUNITRESOLUTION Resolution10BitsCONVERSION/CLOCK RATE Conversion/clock rate 36MHzANALOG INPUT (CCDIN)Input signal level for full-scale out CDS gain =0dB,DPGA gain =0dB 1000mV Maximum input range CDS gain =–3dB ,DPGA gain =0dB1300mV Input capacitance 15pF Input limit–0.33.3VTRANSFER CHARACTERISTICS Differential nonlinearity (DNL)CDS gain =0dB,DPGA gain =0dB ±0.5LSB Integral nonlinearity (INL)CDS gain =0dB,DPGA gain =0dB±1LSBNo missing codesEnsuredStep response settling time Full-scale step input 1Pixel Overload recovery time Step input from 1.8V to 0V 2Pixels Data latency6Clock Grounded input capacitor,PGA gain =0dB 76dB Signal-to-noise ratio (1)Grounded input capacitor,CDS gain =+12dB68dB CCD offset correction range –200200mV INPUT CLAMP Clamp on-resistance 400ΩClamp level1.25VPROGRAMMABLE ANALOG FRONT GAIN (CDS)Minimum gain Gain code =111–3dB Default gain Gain code =0000dB Medium gain 1Gain code =0016dB Medium gain 2Gain code =01012dB Maximum gain Gain code =01118dB Gain control error0.5dBPROGRAMMABLE DIGITAL GAIN (DPGA)Programmable gain range –626dB Gain step0.032dBOPTICAL BLACK CLAMP LOOP Control DAC resolution 10Bits Loop time constant OB loop IDAC is x140.7µs Programmable range of clamp level 1678LSB Optical black clamp levelOBCLP level at code =01000b32LSB OB level program step2LSB(1)SNR =20log (full-scale voltage/rms noise).Copyright ©2008,Texas Instruments Incorporated Submit Documentation Feedback 3PRODUCT PREVIEW ELECTRICAL CHARACTERISTICS:VSP2562VSP2560VSP2562VSP2566SBES008–All specifications at T A=+25°C,all power-supply voltages=+3.0V,and conversion rate=36MHz,no load,unless otherwise noted.VSP2562PTPARAMETER TEST CONDITIONS MIN TYP MAX UNIT RESOLUTIONResolution12Bits CONVERSION/CLOCK RATEConversion/clock rate36MHz ANALOG INPUT(CCDIN)Input signal level for full-scale out CDS gain=0dB,DPGA gain=0dB1000mV Maximum input range CDS gain=–3dB,DPGA gain=0dB1300mV Input capacitance15pF Input limit–0.3 3.3V TRANSFER CHARACTERISTICSDifferential nonlinearity(DNL)CDS gain=0dB,DPGA gain=0dB±0.5LSB Integral nonlinearity(INL)CDS gain=0dB,DPGA gain=0dB±2LSBNo missing codes EnsuredStep response settling time Full-scale step input1Pixel Overload recovery time Step input from1.8V to0V2Pixels Data latency6ClockGrounded input capacitor,PGA gain=0dB76dB Signal-to-noise ratio(1)Grounded input capacitor,CDS gain=+12dB68dB CCD offset correction range–200200mV INPUT CLAMPClamp on-resistance400ΩClamp level 1.25V PROGRAMMABLE ANALOG FRONT GAIN(CDS)Minimum gain Gain code=111–3dB Default gain Gain code=0000dB Medium gain1Gain code=0016dB Medium gain2Gain code=01012dB Maximum gain Gain code=01118dB Gain control error0.5dB PROGRAMMABLE DIGITAL GAIN(DPGA)Programmable gain range–626dB Gain step0.032dB OPTICAL BLACK CLAMP LOOPControl DAC resolution10Bits Loop time constant OB loop IDAC is x140.7µsProgrammable range of clamp level64312LSB Optical black clamp level OBCLP level at code=01000b128LSBOB level program step8LSB (1)SNR=20log(full-scale voltage/rms noise).4Submit Documentation Feedback Copyright©2008,Texas Instruments IncorporatedP R O D U C T P R E V I E WELECTRICAL CHARACTERISTICS:VSP2566VSP2560VSP2562VSP2566 SBES008–AUGUST 2008All specifications at T A =+25°C,all power-supply voltages =+3.0V,and conversion rate =36MHz,no load,unless otherwise noted.VSP2566PTPARAMETERTEST CONDITIONSMINTYPMAXUNITRESOLUTION Resolution16BitsCONVERSION/CLOCK RATE Conversion/clock rate 36MHzANALOG INPUT (CCDIN)Input signal level for full-scale out CDS gain =0dB,DPGA gain =0dB 1000mV Maximum input range CDS gain =–3dB ,DPGA gain =0dB1300mV Input capacitance 15pF Input limit–0.33.3VTRANSFER CHARACTERISTICS Differential nonlinearity (DNL)CDS gain =0dB,DPGA gain =0dB ±2LSB Integral nonlinearity (INL)CDS gain =0dB,DPGA gain =0dB±32LSBNo missing codesEnsuredStep response settling time Full-scale step input 1Pixel Overload recovery time Step input from 1.8V to 0V 2Pixels Data latency6Clock Grounded input capacitor,PGA gain =0dB 76dB Signal-to-noise ratio (1)Grounded input capacitor,CDS gain =+12dB68dB CCD offset correction range –200200mV INPUT CLAMP Clamp on-resistance 400ΩClamp level1.25VPROGRAMMABLE ANALOG FRONT GAIN (CDS)Minimum gain Gain code =111–3dB Default gain Gain code =0000dB Medium gain 1Gain code =0016dB Medium gain 2Gain code =01012dB Maximum gain Gain code =01118dB Gain control error0.5dBPROGRAMMABLE DIGITAL GAIN (DPGA)Programmable gain range –626dB Gain step0.032dBOPTICAL BLACK CLAMP LOOP Control DAC resolution 10Bits Loop time constant OB loop IDAC is x140.7µs Programmable range of clamp level 10244992LSB Optical black clamp levelOBCLP level at code =01000b2048LSB OB level program step128LSB(1)SNR =20log (full-scale voltage/rms noise).Copyright ©2008,Texas Instruments Incorporated Submit Documentation Feedback 5PRODUCT PREVIEW ELECTRICAL CHARACTERISTICS:GENERALVSP2560VSP2562VSP2566SBES008–All specifications at T A=+25°C,all power supply voltages=+3.0V,and conversion rate=36MHz,no load,unless otherwise noted.VSP2560PT,VSP2562PT,VSP2566PTPARAMETER TEST CONDITIONS MIN TYP MAX UNIT GENERAL-PURPOSE,8-BIT DAC(CHANNELS A,B)Minimum output voltage Input code=000000000.1V Maximum output voltage Input code=11111111 2.9V Differential nonlinearity(DNL)At input code=0Fh to E0h±0.25LSB Integral nonlinearity(INL)At input code=0F to E0h±1LSB Offset error±100mV Gain error±5% Monotonicity EnsuredMinimum load resistance10kΩMaximum load capacitance1000pF DIGITAL INPUTSLogic family CMOSV T+Low-to-high threshold voltage 1.7V Input voltageV T–High-to-low threshold voltage 1.0VI IH Logic high,V IN=+3V±20µA Input currentI IL Logic low,V IN=0V±20µA Input capacitance5pF Maximum input voltage–3.0V CC+0.3V DIGITAL OUTPUTSLogic family CMOSLogic coding Straight binaryV OH Logic high 2.4V Output voltageV OL Logic low0.4VOutput data delay code=000nsOutput data delay code=012ns Additional output data delayOutput data delay code=104nsOutput data delay code=116ns POWER SUPPLYVCCSupply voltage 2.7 3.0 3.6VVDDPower dissipation(at3.0V,36MHz)86mWClocks(SHP/SHD/ADCCK)Standby mode power dissipation6mWoff mode:(at3.0V)TEMPERATURE RANGEOperation temperature–25+85°C Thermal resistance,QFPθJA100°C/W6Submit Documentation Feedback Copyright©2008,Texas Instruments IncorporatedP R O D U C T P R E V I E WTIMING CHARACTERISTICSTG HIGH-SPEED PULSECCDSHPSHDADCCKB0B9-VSP2560VSP2562VSP2566 SBES008–AUGUST 2008Figure 1.TG High-Speed Pulse Timing TIMING CHARACTERISTICS FOR Figure 1PARAMETER (1)(2)MIN TYPMAXUNIT t CKP Clock period 27.7ns t ADC ADCCK high or low level13.8ns t WP SHP pulse width 6.9ns t WD SHD pulse width6.9ns t PD SHP trailing edge to SHD leading edge 6.9ns t DP SHD trailing edge to SHP leading edge6.9ns t S Sampling delay3ns Inhibited clock period (from rising edge of SHP tot INHIBIT –310ns rising edge of ADCCK)t OD Output delay (3)05ns DLData latency6Clocks(1)t PD +t WD should be nearly equal to t DP +t WP .(2)The t WP and t WD specifications assume a driving impedance of less than 30Ωat CCDIN.(3)Data output delay by AFE-ctrl(2)register is 0ns.Copyright ©2008,Texas Instruments Incorporated Submit Documentation Feedback 7PRODUCT PREVIEW SERIAL INTERFACE TIMINGSDATASCLKSLOADRLOADVSP2560VSP2562VSP2566SBES008–Figure2.Serial Interface TimingTIMING CHARACTERISTICS FOR Figure2(1)t PD+t WD should be nearly equal to t DP+t WP.(2)The t WP and t WD specifications assume a driving impedance of less than30Ωat CCDIN.The data shift operation should decode at the rising edges of SCLK while S LOAD is low.Furthermore,the input address and data of the serial data stream are loaded to the parallel latch in the VSP2560/62/66at the rising edge of S LOAD.8Submit Documentation Feedback Copyright©2008,Texas Instruments IncorporatedP R O D U C T P R E V I E WDEVICE INFORMATION363534333231302928272625NC COB BYPP BYP CCDGND CCDIN AGND AGND VCC VCC DACOUT B DACOUT AN CB 8N CB 9 (M S B )R L O A DV D DS C L KD G N DS D A T AA D C C KS L O A DV C CR E S E TC L PD MA G N DC L P O BV C CP B L KR E F PS H PR E F NS H DC MA G N D123456789101112NC NC NC NC B0 (LSB)B1B2B3B4B5B6B7484746454443424140393813141516171819202122233724VSP2560VSP2562VSP2566 SBES008–AUGUST 2008VSP2560PT PACKAGE (QFP-48)(TOP VIEW)TERMINAL FUNCTIONS (VSP2560)TERMINAL NAME PIN TYPE (1)DESCRIPTIONNC 1—No connection NC 2—No connection NC 3—No connection NC 4—No connection B05DO Data out bit 0(LSB)B16DO Data out bit 1B27DO Data out bit 2B38DO Data out bit 3B49DO Data out bit 4B510DO Data out bit 5B611DO Data out bit 6B712DO Data out bit 7B813DO Data out bit 8B914DO Data out bit 9(MSB)VDD 15P Digital power supply for data output DGND 16P Digital ground for data output ADCCK 17DI Clock for digital output buffer VCC 18P Analog power supply CLPDM 19DICLPDM signal(1)Designators in TYPE:P =power supply and ground;DI =digital input;DO =digital output;AI =analog input;and AO =analog output.Copyright ©2008,Texas Instruments IncorporatedSubmit Documentation Feedback9PRODUCT PREVIEW VSP2560VSP2562VSP2566SBES008–TERMINAL FUNCTIONS(VSP2560)(continued)TERMINALNAME PIN TYPE(1)DESCRIPTIONCLPOB20DI CLPOB signalPBLK21DI PBLK signalSHP22DI Sampling clock for reference level of CCD signalSHD23DI Sampling clock for data level of CCD signalAGND24P Analog groundDACOUT A25AO General-purpose8-bit DAC output ADACOUT B26AO General-purpose8-bit DAC output BVCC27P Analog power supplyVCC28P Analog power supplyAGND29P Analog groundAGND30P Analog groundCCDIN31AI CCD signal inputCCDGND32AI CCD signal input groundBYP33AO Internal reference bypass to ground(0.1µF)BYPP34AO Internal reference bypass to ground(1000pF)COB35AO OB loop feedback capacitorNC36—No connectionCM37AO Internal reference bypass to ground(0.1µF)REFN38AO Internal reference bypass to ground(0.1µF)REFP39AO Internal reference bypass to ground(0.1µF)VCC40P Analog power supplyAGND41P Analog groundRESET42DI System resetS LOAD43DI Serial data latch signalSDATA44DI Serial data inputSCLK45DI Serial data clockR LOAD46DI Serial data update control signalNC47—No connectionNC48—No connection10Submit Documentation Feedback Copyright©2008,Texas Instruments IncorporatedP R O D U C T P R E V I E W363534333231302928272625NC COB BYPP BYP CCDGND CCDIN AGND AGND VCC VCCDACOUT BDACOUT AN CB 10N CB 11 (M S B )R L O A DV D DS C L KD G N DS D A T AA D C C KS L O A DV C CR E S E TC L PD MA G N DC L P O BV C CP B L KR E F PS H PR E F NS H DC MA G N D123456789101112NC NC B0 (LSB)B1B2B3B4B5B6B7B8B9484746454443424140393813141516171819202122233724VSP2562PT PACKAGE (QFP-48)(TOP VIEW)TERMINAL FUNCTIONS (VSP2562)TERMINAL NAME PIN TYPE (1)DESCRIPTIONNC 1—No connection NC 2—No connection B03DO Data out bit 0(LSB)B14DO Data out bit 1B25DO Data out bit 2B36DO Data out bit 3B47DO Data out bit 4B58DO Data out bit 5B69DO Data out bit 6B710DO Data out bit 7B811DO Data out bit 8B912DO Data out bit 9B1013DO Data out bit 10B1114DO Data out bit 11(MSB)VDD 15P Digital power supply for data output DGND 16P Digital ground for data output ADCCK 17DI Clock for digital output buffer VCC 18P Analog power supply CLPDM 19DI CLPDM signal CLPOB 20DICLPOB signal(1)Designators in TYPE:P =power supply and ground;DI =digital input;DO =digital output;AI =analog input;and AO =analog output.TERMINAL FUNCTIONS(VSP2562)(continued) TERMINALNAME PIN TYPE(1)DESCRIPTIONPBLK21DI PBLK signalSHP22DI Sampling clock for reference level of CCD signalSHD23DI Sampling clock for data level of CCD signalAGND24P Analog groundDACOUT A25AO General-purpose8-bit DAC output ADACOUT B26AO General-purpose8-bit DAC output BVCC27P Analog power supplyVCC28P Analog power supplyAGND29P Analog groundAGND30P Analog groundCCDIN31AI CCD signal inputCCDGND32AI CCD signal input groundBYP33AO Internal reference bypass to ground(0.1µF)BYPP34AO Internal reference bypass to ground by(1000pF)COB35AO OB loop feedback capacitor PRODUCT PREVIEWNC36—Non connectionCM37AO Internal reference bypass to ground(0.1µF)REFN38AO Internal reference bypass to ground(0.1µF)REFP39AO Internal reference bypass to ground(0.1µF)VCC40P Analog power supplyAGND41P Analog groundRESET42DI System resetS LOAD43DI Serial data latch signalSDATA44DI Serial data inputSCLK45DI Serial data clockR LOAD46DI Serial data update control signalNC47—No connectionNC48—No connectionP R O D U C T P R E V I E W363534333231302928272625NC COB BYPP BYP CCDGND CCDIN AGND AGND VCC VCC DACOUT B DACOUT AB 1B 14B 0 (L S B )B 15 (M S B )R L O A DV D DS C L KD G N DS D A T AA D C C KS L O A DV C CR E S E TC L PD MA G N DC L P O BV C CP B L KR E F PS H PR E F NS H DC MA G N D123456789101112B2B3B4B5B6B7B8B9B10B11B12B13484746454443424140393813141516171819202122233724VSP2566PT PACKAGE (QFP-48)(TOP VIEW)TERMINAL FUNCTIONS (VSP2566)TERMINAL NAME PIN TYPE (1)DESCRIPTIONB21DO Data out bit 2B32DO Data out bit 3B43DO Data out bit 4B54DO Data out bit 5B65DO Data out bit 6B76DO Data out bit 7B87DO Data out bit 8B98DO Data out bit 9B109DO Data out bit 10B1110DO Data out bit 11B1211DO Data out bit 12B1312DO Data out bit 13B1413DO Data out bit 14B1514DO Data out bit 15(MSB)VDD 15P Digital power supply for data output DGND 16P Digital ground for data output ADCCK 17DI Clock for digital output buffer VCC 18P Analog power supply CLPDM 19DI CLPDM signal CLPOB 20DICLPOB signal(1)Designators in TYPE:P =power supply and ground;DI =digital input;DO =digital output;AI =analog input;and AO =analog output.TERMINAL FUNCTIONS(VSP2566)(continued) TERMINALNAME PIN TYPE(1)DESCRIPTIONPBLK21DI PBLK signalSHP22DI Sampling clock for reference level of CCD signalSHD23DI Sampling clock for data level of CCD signalAGND24P Analog groundDACOUT125AO General-purpose8-bit DAC(1)outputDACOUT226AO General-purpose8-bit DAC(2)outputVCC27P Analog power supplyVCC28P Analog power supplyAGND29P Analog groundAGND30P Analog groundCCDIN31AI CCD signal inputCCDGND32AI CCD signal input groundBYP33AO Internal reference bypass to ground(0.1µF)BYPP34AO Internal reference bypass to ground by(1000pF)COB35AO OB loop feedback capacitor PRODUCT PREVIEWNC36—Non connectionCM37AO Internal reference bypass to ground(0.1µF)REFN38AO Internal reference bypass to ground(0.1µF)REFP39AO Internal reference bypass to ground(0.1µF)VCC40P Analog power supplyAGND41P Analog groundRESET42DI System resetS LOAD43DI Serial data latch signalSDATA44DI Serial data inputSCLK45DI Serial data clockR LOAD46DI Serial data update control signalB047DO Data out bit0(LSB)B148DO Data out bit1P R O D U C T P R E V I E WFUNCTIONAL BLOCK DIAGRAMDigital OutputPRODUCT PREVIEWSYSTEM DESCRIPTIONOVERVIEWDigital Output10/12/16-BitThe VSP2560/62/66are a family of complete mixed-signal ICs that contain all of the key features associated with the processing of the charge-coupled device (CCD)imager output signal in a video camera,digital still camera,security camera,or other similar applications.Figure 3shows a simplified block diagram of the VSP2560/62/66.The VSP2560/62/66include a correlated double sampler (CDS),a programmable gain amplifier (PGA),an analog-to-digital converter (ADC),an input clamp,an optical black (OB)level clamp loop,a serial interface,timing control,and a reference voltage generator.It is recommend that an off-chip emitter follower be placed between the CCD output and the VSP2560/62/66CCDIN input.All of the functions and parameters (such as PGA gain control,operation mode,and other settings)can be changed through the serial interface.All parameters are reset to the default value when the RESET pin goes to low asynchronously from the clocks.The VSP2560/62/66also provide a two-channel,general-purpose,8-bit digital-to-analog converter (DAC).This DAC can be applied to various applications,such as CCD bias control,iris control,and so forth.Figure 3.Simplified Block DiagramP R O D U C T P R E V I E WCORRELATED DOUBLE SAMPLER (CDS)REFPCCD InputINPUT CLAMP16-BIT ADCThe output signal of a CCD image sensor is sampled twice during one pixel period:once at the reference interval,and again at the data interval.Subtracting these two samples extracts the pixel video information and removes any noise that is common (or correlated)to both intervals.Thus,it is very important to reduce the reset noise and low-frequency noises that are present on the CCD output signal through the CDS.Figure 4shows a block diagram of the CDS.Figure 4.CDS and Input Clamp Block DiagramThe buffered CCD output is capacitively coupled to the VSP2560/62/66.The purpose of the input clamp is to restore the dc component of the input signal that was lost with the ac coupling,and establish the desired dc bias point for the CDS.The block diagram of Figure 4also shows the input clamp.The input level is clamped to the internal reference voltage,REFP (1.5V),during the dummy pixel interval.More specifically,the clamping function becomes active when both CLPDM and SHP are active.Immediately after device power-on,the input capacitor clamp voltage is not charged.For fast charge-up of the clamp voltage,the VSP2560/62/66provide a boost-up circuit.The VSP2560/62/66include a high-speed,16-bit ADC.This ADC uses a fully-differential pipelined architecture with correction.This architecture,incorporating ADC correction,is very advantageous for realizing better linearity for a smaller signal level as a result of the large linearity errors that tend to occur at specific points in the full-scale range;linearity also improves for a signal level below that specific point.The ADC ensures 16-bit resolution across the entire full-scale range.PRODUCT PREVIEW OPTICAL BLACK LEVEL(OB)LOOP AND OB CLAMP LEVELOB ClampLevelT =C16384I´MIN(1) SR =IMAXC(2) The VSP2560/62/66have a built-in optical black(OB)offset self-calibration circuit(OB loop)that compensates the OB level by using OB pixels output from the CCD image sensor.A block diagram of the OB loop and OB clamp circuit is shown in D offset is compensated by converging this calibration circuit while activating the CLPOB pin during a period when the OB pixels are output from the CCD.Figure5.OB Loop and OB Level ClampAt the CDS circuit,the CCD offset is compensated as a difference between the reference level and the OB pixel data level.These compensated signal levels are recognized as actual OB levels,and the outputs are clamped to the OB levels set by the serial interface.These OB levels are the base of black for the effective pixel period thereafter.Because DPGA,which is a gain stage,is outside the OB loop,the OB levels are not affected even when the gain is changed.The converging time of the OB loop is determined based on the capacitor value connected to the COB terminal and output from the current output DAC(IDAC)of the loop.The time constant can be obtained from Equation1:Where:•C is the capacitor value connected to COB•I MIN is the minimum current(0.15µA)of the IDAC,which is the current equivalent to1LSB of the IDAC output.When C=0.1µF,T is40.7µs.Slew rate(SR)can be obtained from Equation2:Where:•C is the capacitor value connected to COB•I MAX is the maximum current(153µA)of the IDAC,which is the current equivalent to1023LSB of the IDAC output.IDAC output current multiplication is provided by the VSP2560/62/66.This function increases the IDAC output current through the serial interface in multiples of2,4,and8.Increased IDAC current shortens the time constant of the OB loop.In this case,the OB level is drastically changed and must quickly settle the OB loop;this function is effective.Immediately after power-on,the COB capacitor voltage is not charged.For fast start up,a COB voltage boost-up circuit is provided.P R O D U C T P R E V I E WPROGRAMMABLE GAIN1282561024Input Code for Gain Control (0 to 1023)302520151050-5-10G a i n (d B )384512640768896PRE-BLANKING AND DATA LATENCYThe OB clamp level (digital output value)can be externally set through the serial interface by inputting the digital code to the OB clamp level register.The digital codes to be input and the corresponding OB clamp levels are shown in Table 1.Table 1.Input Codes and OB Clamp Levels to be SetCLAMP LEVELCODE VSP2560(10-Bit)VSP2562(12-Bit)VSP2566(16-Bit)00000b 16LSB 64LSB 1024LSB 00001b 18LSB 72LSB 1152LSB————00110b 28LSB 112LSB 1792LSB 00111b 30LSB 120LSB 1920LSB 01000b (default)32LSB 128LSB 2048LSB 01001b 34LSB 136LSB 2176LSB————11110b 76LSB 304LSB 4864LSB 11111b78LSB312LSB4992LSBThe VSP2560/62/66have gains that range from –9dB to 44dB.The desired gain is set as a combination of CDS gain and the digital programmable gain amplifier (DPGA).The CDS gain can be programmed from 0dB to 18dB in 6-dB steps,and has a –3-dB gain for the large input signal (such as over 1V).Digital gain can be programmed from –6dB to 26dB in 0.032-dB steps.Both gain controls are managed through the serial interface.The digital gain changes linearly in proportion to the settling code.Figure 6shows the relationship of input code to digital gain.Figure 6.Settling Code versus Digital GainThe recommended usage of the combination of CDS and digital gain is to adjust the CDS gain first,primarily as an image signal amplification;afterwards,use the digital gain as an adaptive gain control.The wide range of digital gain covers the necessary gain range on most typical applications.If the CDS gain must be changed,however,it is recommended to change it during a period that does not affect picture quality (such as a blanking period).The VSP2560/62/66have a pre-blanking function.When PBLK is low,the digital outputs all become '0'at the eighth rising edge of ADCCK after PBLK goes low,to accommodate the clock latency of the VSP2560/62/66.The data latency of this family of devices is six clock cycles.The digital output data are transmitted at the rising edge of ADCCK with a delay of six clock cycles.。

PS-8R II 电源条件器顺序器 SMP+ 技术产品说明书

DATASHEETPS-8R I IPOWER CONDITIONER/SEQUENCER WITH SMP+TECHNOLOGYUNPARALLELED POWER PURIFICATION AND PROTECTIONFEATURES• Series Multi-Stage Protection Plus (SMP+) for virtually maintenance free protection from surges and spikes. No sacrificed parts, no service calls, no downtime!• Furman’s unequaled Linear Filtering Technology (LiFT ) rids systems of AC line noise for consistent audio/video clarity • Automatic Extreme Voltage Shutdown (E.V.S.) powers down equipment during a prolonged or extreme over-voltage • Six sequenced rear panel outlets (in 3 groups), two switched rear panel outlets, and one front panel unswitched outlet • Momentary and Maintained sequencing via rear panel terminal block or front panel switch• BNC connector on the rear panel allows attachment of any standard 12V gooseneck lamp to illuminate the rear of your rack • 20 amp rating • 3 year limited warrantyDESCRIPTIONThe most widely recognized and trusted name in AC power conditioning is proud to introduce the PS-8R II power conditioner / sequencer, featuring Furman’s revolutionary SMP+ technology. Furman’s Series Multi-Stage Protection Plus (SMP+) circuit features our exclusive Linear Filtering Technology (LiFT ) and Extreme Voltage Shutdown (E.V.S.).Together, these technologies comprise what is, without question, the world’s most advanced and comprehensive transient voltage surge suppressor.Additionally, the PS-8R II Power Conditioner/Sequencer is capable of powering up a rack full of equipment in a 3-step delayed sequence. The sequence is reversed for power-down. The sequence can be initiated with either momentary or maintained switches, locally or remotely. A duplex outlet is provided for each delay step. A front panel screwdriver adjustment sets the delay time for the PS-8R II. The PS-8R II also features a lockingswitch with a removable key for maximum security. One or more Furman PS-8R II’s may be installed in remote locations and operated via low-voltage wiring. The PS-8R II includes a rear mounted BNC jack which accepts any standard (12VAC, 0.5A) gooseneck lamp for rear rack illumination, as well as a front panel switch which controls the gooseneck’s operation.PS-REL Relay AccessoryAllows a PS-8R II to be turned on by sensing AC at a preamp’s switched outlet; also allows daisy-chaining for 6 or more delayed outlet groups.Export ModelsModels PS-PRO E II: “E” suffix versions are for use in countries with 220/240 volt AC lines. Furman Power Sequencers use internationally accepted IEC-320 connectors.(Continued on reverse)S ERIES MULTI-STAGEPROTECTIONL I N E A R F I L T E R I N GTECHNOLOGYE X T R E M EVOLTAGE SHUTDOWNSeries Multi-Stage Protection Plus (SMP+)SMP+ is Furman’s proprietary surge suppression and noisefiltration system. Designed over a period of two years by ourCalifornia based engineering team, SMP+ is composed of three separate and distinct technologies which work together in a precisely tuned circuit to filter or “clean” the incoming power and to protect connected equipment from potentially damaging AC events. These technologies are Linear Filtering,Series Multi-Stage Protection, and Extreme Voltage Shutdown.Linear Filtering Technology (LiFT ):Unfortunately, traditional AC filter conditioners have been designed for unrealistic laboratory conditions. Prior technologies could actually harm audio and video performance more than they help, due to the resonant peaking of their antiquated, non-linear designs. Under certain conditions, these designs can actually add more than 10 dB of noise to the incoming AC line! Worse still, lost digital data, the need to re-boot digital pre-sets, or destroyed digital converters are frequently caused by excessive voltage spikes and AC noise contaminating the equipment ground. Furman’s LiFT takes another approach, ensuring optimal performance through linear filtering and no leakage to ground.Series Multi-Stage Protection (SMP ):Traditional surge suppression relies on circuits that “sacrifice” themselves when exposed to multiple transient voltage spikes, requiring the dismantling of your system and repair of your surge suppressor. With Furman’s SMP+, however, damaging transient voltages are safely absorbed, clamped and dissipated. No sacrificed parts, no service calls, no downtime. Also unique to Furman’s SMP+ is its unparalleled clamping voltage. While other designs offer clamping voltages that are well above 300Vpk, Furman’s SMP+ clamps at 188Vpk, 133 VAC RMS, even when tested with multiple 6000Vpk - 3000 amp surges! This unprecedented level of protection is only available with Furman’s SMP+technology. Extreme Voltage Shutdown (E.V.S.):When voltage rises to extreme levels because of a lost neutral line or an accidental connection to 208 or 240 VAC, Furman’s Extreme Voltage Shutdown kicks in, automatically powering down all equipment quickly and safely in order to prevent damage from occurring. An indicator LED will then illuminate, alertingyou to the situation until the over voltage condition is corrected.Furman Sound, LLC • 1690 Corporate Circle • Petaluma, CA. 94954 USA • Phone: (707) 763-1010 • Fax: (707) 763-1310 • Current Rating15 amps (“E” version 19 amps)Operating Voltage90 to 140 VAC (“E” version 180 to 280 VAC)Over Voltage Shutdown140 VAC typically (“E” version 280 VAC typically)Spike Protection ModesLine to neutral, zero ground leakageSpike Clamping Voltage188 Vpk @ 3,000 amps, 133 VAC RMS(tested to UL-1449 6,000 Vpk @ 3,000 amps)Response Time1 nanosecondMaximum Surge Current6,500 ampsNoise Attenuation10 dB @ 10 kHz40 dB @ 100 kHz 100 dB @ 10 MHzLinear attenuation curve from 0.05 - 100 ohms line impedanceDimensions19” W x 10.5” D x 1.75” HWeight11 lbs (5 kg)Power Consumption6 wattsSafety Agency ListingsCE, NRTL-CPatent NumberCA1332074 (4,901,183)Three Year Limited WarrantyThe PS-8R II is protected by a limited three year warranty covering defects in materials and workmanship.PS-8R I IPS-8R I I SPECIFICATIONS© 2006 Furman Sound, LLC. All rights reserved. 051006。