IS61LV 216L中文资料

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中英文国家对照表

中英文国家对照表相信大部分Aff跑的offer不仅仅局限于几个熟悉的国家，那当我们遇到不熟悉的国家和地区，或者想知道中文国家名称对应的英文名称，抑或反过来想知道英文国家名称对应的中文名称时，我们就需要到处查找与这有关的资料，这往往消耗掉了我们大量的时间和精力。

现在金橙子海外联属营销网用一个表格集成了大部分数据，包括全球所有国家和地区的中英文、国家代码、以及人口数据。

表格是基于ISO3166标准整理而来，一起来看看。

序号ISO英文名称中文名称人口数据(默认:万)人均GDPE-Packet1AD Andorra安道尔72AE United Arab Em.阿联酋927 3AF Afghanistan阿富汗3,3374AG Antigua andBarbuda安提瓜和巴布达95AI Anguilla安圭拉16AL Albania阿尔巴尼亚290 7AM Armenia亚美尼亚3038AN NetherlandsAntilles荷属安的列斯群岛189AO Angola安哥拉2,583 10AR Argentina阿根廷4,385 11AS American Samoa美属萨摩亚612AT Austria奥地利857序号ISO英文名称中文名称(默认:万)均GDPE-Packet13AU Australia澳大利亚2,431Yes 14AW Aruba阿鲁巴群岛1015AZ Azerbaijan阿塞拜疆98716BA Bosnia波斯尼亚38017BB Barbados巴巴多斯2918BD Bangladesh孟加拉16,29119BE Belgium比利时1,13720BF Burkina Faso布基纳法索1,86321BG Bulgaria保加利亚71022BH Bahrain巴林14023BI Burundi布隆迪1,15524BJ Benin贝宁1,11725BL Saint Barthelemy 圣巴瑟米（法）26BM Bermuda百慕大627BN Brunei文莱4328BO Bolivia玻利维亚1,08929BQ Bonaire SintEustatius Saba荷兰加勒比区30BR Brazil巴西20,957 31BS Bahamas巴哈马3932BT Bhutan不丹7833BV Bouvet Island 布韦岛（挪）序号ISO英文名称中文名称(默认:万)均GDPE-Packet34BW Botswana博茨瓦纳23035BY Belarus白俄罗斯94836BZ Belize伯利兹3737CA Canada加拿大3,629Yes38CC Cocos (Keeling)Islands科科斯群岛039CD The DemocraticRepublic of theCongo刚果民主共和国7,97240CF Central AfricanRepublic中非共和国50051CG Congo刚果47442CH Switzerland瑞士83843CI Côte d'Ivoire科特迪瓦2,325 44CK Cook Islands库克群岛245CL Chile智利1,813 46CM Cameroon喀麦隆2,392 47CN China中国138,232 48CO Colombia哥伦比亚4,865 49CR Costa Rica哥斯达黎加48650CU Cuba古巴1,139 51CV Cape Verde佛得角5352CW Curacao库拉索1653CX Christmas Island圣诞岛054CY Cyprus塞浦路斯118序号ISO英文名称中文名称(默认:万)均GDPE-Packet55CZ Czech捷克1,055 56DE Germany德国8,068 57DJ Djibouti吉布提9058DK Denmark丹麦56959DM Dominica多米尼克760DO Dominican Rep多米尼加1,065 61DZ Algeria阿尔及利亚4,038 62EC Ecuador厄瓜多尔1,639 63EE Estonia爱沙尼亚13164EG Egypt埃及9,338 65EH Western Sahara西撒哈拉5866ER Eritrea厄立特里亚53567ES Spain西班牙4,606 68ET Ethiopia埃塞俄比亚10,185 69EU EU欧盟70FI Finland芬兰55271FJ Fiji斐济9072FK Falkland Islands (Malvinas)福克兰群岛（马尔维纳斯群岛）73FM Micronesia,Federated Statesof密克罗尼西亚联邦1074FO Faroe Islands法罗群岛575FR France法国6,467序号ISO英文名称中文名称(默认:万)均GDPE-Packet76GA Gabon加蓬17677GB Great Britain英国6,511Yes 78GD Grenada格林纳达1179GE Georgia格鲁吉亚39880GF French Guiana法属圭亚那2881GG Guernsey格恩西岛782GH Ghana加纳2,80383GI Gibraltar直布罗陀384GL Greenland格陵兰685GM Gambia冈比亚20586GN Guinea几内亚1,29587GP Guadeloupe瓜德罗普4788GQ Equatorial Guinea赤道几内亚8789GR Greece希腊1,09290GS South Georgia andthe Islands南乔治亚岛091GT Guatemala危地马拉1,667 92GU Guam关岛1793GW Guinea-Bissau几内亚比绍189 94GY Guyana圭亚那7795HK Hong Kong中国香港73596HM Heard Island andMcDonald Islands赫德岛和麦克唐纳群岛97HN Honduras洪都拉斯819序号ISO英文名称中文名称(默认:万)均GDPE-Packet98HR Croatia克罗地亚42399HT Haiti海地1,085 100HU Hungary匈牙利982101ID Indonesia印度尼西亚26,058 102IE Ireland爱尔兰471103IL Israel以色列819104IN India印度132,680105IO British IndianOcean Territory英属印度洋领地106IQ Iraq伊拉克3,755 107IR Iran伊朗8,004 108IS Iceland冰岛33109IT Italy意大利5,980 110JM Jamaica牙买加280 111JO Jordan约旦775 112JP Japan日本12,632 113KE Kenya肯尼亚4,725114KG Kyrgyzstan 吉尔吉斯斯坦603115KH Cambodia柬埔寨1,583 116KI Kiribati基里巴斯11 117KM Comoros科摩罗81118KN Saint Kitts andNevis圣基茨和尼维斯6序号ISO英文名称中文名称(默认:万)均GDPE-Packet119KP DemocraticPeople's Republicof Korea朝鲜2,528120KR South Korea韩国5,050121KV The Republic ofKosovo科索沃180122KW Kuwait科威特401 123KY Cayman Islands开曼群岛6124KZ Kazakhstan哈萨克斯坦1,786 125LA Laos老挝692 126LB Lebanon黎巴嫩599 127LC Saint Lucia圣卢西亚19 128LI Liechtenstein列支敦士登4129LK Sri Lanka斯里兰卡2,081 130LR Liberia利比里亚462 131LS Lesotho莱索托216 132LT Lithuania立陶宛285 133LU Luxembourg卢森堡58 134LV Latvia拉脱维亚196 135LY Libya利比亚633 136MA Moroco摩洛哥3,482 137MC Monaco摩纳哥4138MD Republic ofMoldova摩尔多瓦406139ME Montenegro黑山63序号ISO英文名称中文名称(默认:万)均GDPE-Packet140MG Madagascar马达加斯加2,492 141MH Marshall Islands马绍尔群岛5142MK Republic ofMacedonia马其顿208143ML Mali马里1,813 144MM Myanmar缅甸5,436 145MN Mongolia蒙古301 146MO Macau中国澳门60147MP Northern MarianaIslands北马里亚纳群岛6148MQ Martinique马提尼克40149MR Mauritania毛里塔尼亚417 150MS Montserrat蒙特塞拉特1151MT Malta马耳他42152MU Mauritius毛里求斯128 153MV Maldives马尔代夫37154MW Malawi马拉维1,775 155MX Mexico墨西哥12,863 156MY Malaysia马来西亚3,075 157MZ Mozambique莫桑比克2,875 158NA Namibia纳米比亚251159NC New Caledonia 新喀里多尼亚27160NE Niger尼日尔2,072序号ISO英文名称中文名称(默认:万)均GDPE-Packet161NF Norfolk Island诺福克岛0162NG Nigeria尼日利亚18,699163NI Nicaragua尼加拉瓜615164NL Netherlands荷兰1,698165NO Norway挪威527166NP Nepal尼泊尔2,885167NR Nauru瑙鲁1168NU Niue纽埃0169NZ New Zealand新西兰457Yes 170OM Oman阿曼465171PA Panama巴拿马399172PE Peru秘鲁3,177173PF French Polynesia 法属波利尼西亚29174PG Papua New Guinea 巴布亚新几内亚778175PH Philippines菲律宾10,225 176PK Pakistan巴基斯坦19,283 177PL Poland波兰3,859178PM Saint Pierre andMiquelon圣皮埃尔和密克隆1179PN Pitcairn皮特凯恩0 180PR Puerto Rico波多黎各368 181PS Gaza Strip加沙地带220序号ISO英文名称中文名称(默认:万)均GDPE-Packet182PT Portugal葡萄牙1,030 183PW Palau帕劳2184PY Paraguay巴拉圭673 185QA Qatar卡塔尔229 186RE Reunion留尼旺群岛87187RO Romania罗马尼亚1,937 188RS Serbia塞尔维亚881 189RU Russia俄罗斯14,344 190RW Rwanda卢旺达1,188 191SA Saudi Arabia沙特阿拉伯3,216 192SB Solomon Islands所罗门群岛59193SC Seychelles塞舌尔10194SD Sudan苏丹4,118 195SE Sweden瑞典985 196SG Singapore新加坡570197SH Saint Helena,Ascension andTristan Da Cunha圣赫勒拿，阿森松岛和特里斯坦达库尼亚198SI Slovenia斯洛文尼亚207199SJ Svalbard 斯瓦尔巴特群岛200SK Slovakia斯洛伐克543 201SL Sierra Leone塞拉利昂659 202SM San Marino圣马力诺3序号ISO英文名称中文名称(默认:万)均GDPE-Packet203SN Senegal塞内加尔1,559 204SO Somalia索马里1,108 205SR Suriname苏里南55 206SS South Sudan南苏丹1,273207ST Sao Tome andPrincipe圣多美和普林西比19208SV El Salvador萨尔瓦多615 209SX Sint Maarten荷属圣马丁4210SY Syrian ArabRepublic叙利亚1,856211SZ Swaziland斯威士兰130212TC Turks and CaicosIslands特克斯和凯科斯群岛3213TD Chad乍得1,450 214TG Togo多哥750 215TH Thailand泰国6,815 216TJ Tajikistan塔吉克斯坦867 217TK Tokelau托克劳群岛0218TL East Timor东帝汶121 219TM Turkmenistan土库曼斯坦544 220TN Tunisia突尼斯1,138 221TO Tonga汤加11 222TR Turkey土耳其7,962223TT Trinidad andTobago特里尼达和多巴哥136序号ISO英文名称中文名称(默认:万)均GDPE-Packet224TV Tuvalu图瓦卢1225TW Taiwan中国台湾2,340226TZ Tanzania, UnitedRepublic of坦桑尼亚5,516227UA Ukraine乌克兰4,462 228UG Uganda乌干达4,032229UM United StatesMinor OutlyingIslands美国本土外小岛屿230US USA美国32,412Yes 231UY Uruguay乌拉圭344232UZ Uzbekistan 乌兹别克斯坦3,030233VA Vatican CityState梵蒂冈0234VC Saint Vincent andthe Grenadines圣文森特和格林纳丁斯11235VE Venezuela委内瑞拉3,152236VG British Virginlslands英属维尔京群岛3237VI Virgin Islands维京群岛11 238VN Vietnam越南9,444 239VU Vanuatu瓦努阿图27240WF Wallis and Futuna 瓦利斯群岛和富图纳群1序号ISO英文名称中文名称(默认:万)均GDPE-Packet岛241WS Samoa萨摩亚19 242YE Yemen也门2,748 243YT Mayotte马约特岛25 244ZA South Africa南非5,498 245ZM Zambia赞比亚1,672 246ZW Zimbabwe津巴布韦1,597。

ISSIIS61LV25616AL中文

20
20
25
25
15
15
20
20
单位 mA mA mA mA
电容(1)
符号
参数
条件
最大
CIN
输入电容
VIN=0V
6
COUT
输入/输出电容
VOUT=0V
8
注
1. 这两个参数均在最开始时测得设计或处理的任何变化都将影响它们的值
单位 pF pF
4
电子发烧友电子技术论坛广州周立功单片机发展有限公司 Tel 020 38730976 38730977 Fax 38730925 http //
2
电子发烧友电子技术论坛广州周立功单片机发展有限公司 Tel 020 38730976 38730977 Fax 38730925 http //
管脚配置
44 脚 LQFP
读周期变化特性(1) 工作范围内
符号
参数
10
12
单位
最小
最大
最小
最大
tRC tAA tOHA tACE tDOE tHZOE(2) tLZOE(2) tHZCE(2) tLZCE(2) tBA tHZB(2) tLZB(2) tPU tPD 注
读周期时间地址访问时间输出保持时间
CE 访问时间 OE 访问时间 OE 到高阻输出 OE 到低阻输出 CE 到高阻输出 CE 低阻输出 LB , UB 访问时间 LB , UB 到高阻输出 LB , UB 到低阻输出上电时间掉电时间
其可靠性
3
电子发烧友电子技术论坛广州周立功单片机发展有限公司 Tel 020 38730976 38730977 Fax 38730925 http //

ISSI异步SRAM存储芯片IS61LV25616AL功能简介

ISSI异步SRAM存储芯片IS61LV25616AL功能简介IS61LV25616AL是ISSI公司的一款容量为256Kx 16bits的且引脚功能彻低兼容的4Mb的异步SRAM。

也是一款大容量且存储时光相对较短的存储器。

对其控制要求相对容易。

由一个高速、4,194,304 位的静态RAM,可组成262,144个字(16位)。

该器件由ISSI的高性能技术创造而成。

将这种高牢靠性的处理技术与创新的设计技术相结合，就产生了高性能和低功耗的IS61LV25616AL器件。

ISSI代理英尚微提供完美的产品解决计划以及技术指导等一体系产品服务。

特性
●高速拜访时光: 10,12ns
●CMOS低功耗工作
●低等待模式功率:小于CMOS 5mA (典型值)的等待
●TTL兼容接口电平●单个3.3V电源
●彻低静态操作:无需时钟和刷新
●三态输出.
●凹凸字节数据控制
●可用的工业级温度
IS61LV25616AL存储器的结构框图
当OE为高电平(不选)时，器件处于等待模式，功耗随着CMOS输入电平-起降低。

芯片使能输入CE和输出访能输入OE可便利实现存储器的扩展。

低电平有效的写使能( WE )控制着存储器的写和读操作。

高字节(UB)和低
第1页共2页。

ARMFLY STM32F103ZE-EK 开发板说明书

S T M32F103Z E-E K开发板用户手册版本：V1.0安富莱电子开发网W W W.A R M F L Y.C O M1.产品规格简介STM32F103ZE-EK开发板以STM32F103ZET6（LQFP144）为核心。

STM32F103ZE 是ST（意法半导体）公司推出的ARM Crotex-M3产品线中功能最强大的一款CPU。

片内集成512kB Flash、64kB RAM、1个USB、1个CAN、 8个定时器、5个USART、3个ADC、2个DAC、3个SPI、2个I2C、2个I2S、1个SDIO、112个GPIO、FSMC总线（支持NOR,NAND,SRAM）。

CPU主频72MHz,广泛适用于各种应用场合。

本开发板具备丰富的硬件资源，配套的试验例程均提供源代码，文档齐备，非常适合于学习和项目评估。

硬件资源■ 8M晶振作为MCU的时钟，32768晶振用于RTC ■ 1M字节SRAM，16M字节NOR Flash，128M字节NADN Flash■ 2M字节串行Flash，256字节串行EEPROM■ 1个SD/MMC卡座■ 1个CAN2.0A/B接口■ 2个RS232串口■ 1个RS485接口■ 1个USB2.0全速DEVICE接口■ 1个USB2.0全速HOST接口■ 1个100M/10M以太网接口■ I2S音频DAC（24bit，96kHz），1个立体声耳机插座，1个扬声器■ 3.0寸TFT真彩触摸LCD（WQVGA，400x240）■ 1个5向摇杆，1个Reset按钮、1个wakeup按钮、1个自定义按钮 ■ 4个自定义LED，1个电源LED，1个音频LED ■ 1个CR1220电池座■ 1个精密可调电阻连接到ADC输入■ 所有的GPIO引到2.54mm间距焊盘■ 1个DAC引出端子，1个PWM引出端子■ 标准2.54mm间距JTAG插座■ 2个BNC输入端子，集成双通道示波器电路，具备AC/DC切换、输入增益切换开关■ 3种供电方式：USB电缆、外接5V电源、JTAG 调试接口（J-LINK仿真器）■ 1个电源开关，上下电时无需拔插电缆■ 3种启动方式：用户Flash、系统存储器、SRAM ■ 用拨码开关取代跳线帽，避免跳线帽丢失■ 板子规格：14cm x 12cm软件资源■ 提供100多个试验例程■ 提供uCOS_II+ucGUI例程和文档■ 即将展开USB虚拟示波器项目源码■ 即将移植ucLinux （硬件资源已满足要求） ■ 更多的软件资源将在发布标配清单■STM32F103ZE-EK开发板1块■ 3.0寸TFT触摸显示模块1块■1根串口线、1根网线、1根USB电缆■资料光盘1张可选的配件：■60M示波器探头1对■USB转串口线1根2.快速入门2.1.注意事项（1）外接电源必须是5.0V 的直流电源，插头有极性，内正外负。

IS61LV51216(外扩RAM)

Integrated Silicon Solution, Inc. — — 1-800-379-4774
1
Rev. B
03/10/05
IS61LV51216
TRUTH TABLE
Mode Not Selected Output Disabled Read
Write
WE CE OE LB UB
2
Integrated Silicon Solution, Inc. — — 1-800-379-4774
Rev. B
பைடு நூலகம்
03/10/05
IS61LV51216
ISSI ®
PIN CONFIGURATIONS 48-Pin mini BGA (9mmx11mm)
1 23 45 6
I/O DATA CIRCUIT
CE
OE
CONTROL
WE
CIRCUIT
UB
LB
512K x 16 MEMORY ARRAY
COLUMN I/O
Copyright © 2005 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products.

IS61LV6416

Copyright © 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products.Integrated Silicon Solution, Inc.1Rev. C 10/14/03IS61LV6416IS61LV6416LISSI®FEATURES•High-speed access time: 8, 10, 12 ns •CMOS low power operation — 61LV6416:75 mW (typical) operating current 0.5 mW (typical) standby current — 61LV6416L:65 mW (typical) operating current 50 µW (typical) standby current •TTL compatible interface levels •Single 3.3V power supply•Fully static operation: no clock or refresh required•Three state outputs•Data control for upper and lower bytes •Industrial temperature availableDESCRIPTIONThe ISSI IS61LV6416/IS61LV6416L is a high-speed,1,048,576-bit static RAM organized as 65,536 words by 16bits. It is fabricated using ISSI 's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns with low power consumption.When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels.Easy memory expansion is provided by using Chip Enable and Output Enable inputs, CE and OE . The active LOW Write Enable (WE ) controls both writing and reading of the memory. A data byte allows Upper Byte (UB ) and Lower Byte (LB ) access.The IS61LV6416/IS61LV6416L is packaged in the JEDEC standard 44-pin 400-mil SOJ, 44-pin TSOP-II, and 48-pin mini BGA (6mm x 8mm).FUNCTIONAL BLOCK DIAGRAMOCTOBER 200364K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPL YIS61LV6416IS61LV6416L2Integrated Silicon Solution, Inc.Rev.C 10/14/03ISSI®PIN CONFIGURATIONS 44-Pin SOJ (K)1234567891011121314151617181920212244434241403938373635343332313029282726252423A15A14A13A12A11CE I/O0I/O1I/O2I/O3VDD GND I/O4I/O5I/O6I/O7WE A10A9A8A7NCA0A1A2OE UB LB I/O15I/O14I/O13I/O12GND VDD I/O11I/O10I/O9I/O8NC A3A4A5A6NC1234567891011121314151617181920212244434241403938373635343332313029282726252423A15A14A13A12A11CE I/O0I/O1I/O2I/O3V DD GND I/O4I/O5I/O6I/O7WE A10A9A8A7NCA0A1A2OE UB LB I/O15I/O14I/O13I/O12GND V DD I/O11I/O10I/O9I/O8NC A3A4A5A6NC44-Pin TSOP-II (T)48-Pin mini BGA (6mm x 8mm) (B)PIN DESCRIPTIONSA0-A15Address Inputs I/O0-I/O15Data Inputs/Outputs CE Chip Enable Input OE Output Enable Input WE Write Enable InputLB Lower-byte Control (I/O0-I/O7)UB Upper-byte Control (I/O8-I/O15)NC No Connection V DD Power GNDGround1 2 3 4 5 6A B C D E F G HLB OE A0A1A2NC I/O 8UB A3A4CE I/O 0I/O 9I/O 10A5A6I/O 1I/O 2GND I/O 11NC A7I/O 3V DD V DD I/O 12NC NC I/O 4GND I/O 14I/O 13A14A15I/O 5I/O 6I/O 15NC A12A13WE I/O 7NCA8A9A10A11NCIS61LV6416IS61LV6416LIntegrated Silicon Solution, Inc.3Rev.C 10/14/03ISSI®OPERATING RANGERangeAmbient TemperatureV DD (8,10 ns)V DD (12 ns)Commercial 0°C to +70°C 3.3V+10%,-5% 3.3V ± 10%Industrial–40°C to +85°C3.3V+10%,-5%3.3V ± 10%DC ELECTRICAL CHARACTERISTICS (Over Operating Range)Symbol ParameterTest ConditionsMin.Max.Unit V OH Output HIGH Voltage V DD = Min., I OH = –4.0 mA 2.4—V V OL Output LOW Voltage V DD = Min., I OL = 8.0 mA—0.4V V IH Input HIGH Voltage 2V DD + 0.3V V IL Input LOW Voltage (1)–0.30.8V I LI Input Leakage GND ≤ V IN ≤ V DD–22µA I LOOutput LeakageGND ≤ V OUT ≤ V DD , Outputs Disabled –22µANotes:1.V IL (min.) = –2.0V for pulse width less than 10 ns.ABSOLUTE MAXIMUM RATINGS (1)Symbol ParameterValueUnit V TERM Terminal Voltage with Respect to GND –0.5 to V DD +0.5V T STG Storage Temperature –65 to +150°C P T Power Dissipation1.5W I OUTDC Output Current (LOW)20mANote:1.Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.TRUTH TABLEI/O PINModeWE CE OE LB UB I/O0-I/O7I/O8-I/O15V DD Current Not Selected X H X X X High-Z High-Z I SB 1, I SB 2Output Disabled H L H X X High-Z High-Z I CCX L X H H High-Z High-Z ReadH L L L H D OUT High-Z I CCH L L H L High-Z D OUT H L L L L D OUT D OUT Write L L X L H D IN High-Z I CCL L X H L High-Z D IN LLXLLD IND INIS61LV6416IS61LV6416L4Integrated Silicon Solution, Inc.Rev.C 10/14/03ISSI®CAPACITANCE (1)Symbol Parameter Conditions Max.Unit C IN Input Capacitance V IN = 0V 6pF C OUTInput/Output CapacitanceV OUT = 0V8pFNote:1.Tested initially and after any design or process changes that may affect these parameters.IS61LV6416POWER SUPPLY CHARACTERISTICS (1) (Over Operating Range)-8 ns -10 ns -12 ns Symbol Parameter Test Conditions Min.Max.Min.Max.Min.Max.Unit I CCV DD Dynamic Operating V DD = Max.,Com.—140—120—100mASupply Current I OUT = 0 mA, f = f MAX Ind.—150—130—110typ.(2)—105—95—75I SB 1TTL Standby Current V DD = Max.,Com.—15—15—15mA(TTL Inputs)V IN = V IH or V IL Ind.—20—20—20CE ≥ V IH , f = 0I SB 2CMOS StandbyV DD = Max.,Com.—5—5—5mACurrent (CMOS Inputs)CE ≥ V DD – 0.2V,Ind.—10—10—10V IN ≥ V DD – 0.2V, or typ.(2)—0.5—0.5—0.5V IN ≤ 0.2V, f = 0Note:1.At f = f MAX , address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.2. Typical values are measured at V DD =3.3V, T A =25o C. Not 100% Tested.IS61LV6416LPOWER SUPPLY CHARACTERISTICS (1) (Over Operating Range)-8 ns -10 ns Symbol Parameter Test Conditions Min.Max.Min.Max.Unit I CCV DD Dynamic Operating V DD = Max.,Com.—100—95mASupply Current I OUT = 0 mA, f = f MAX Ind.—110—105typ.(2)—75—70I SB 1TTL Standby Current V DD = Max.,Com.—15—15mA(TTL Inputs)V IN = V IH or V IL Ind.—20—20CE ≥ V IH , f = 0I SB 2CMOS StandbyV DD = Max.,Com.—1—1mACurrent (CMOS Inputs)CE ≥ V DD – 0.2V,Ind.— 1.5— 1.5V IN ≥ V DD – 0.2V, or typ.(2)—0.05—0.05V IN ≤ 0.2V, f = 0Note:1.At f = f MAX , address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.2. Typical values are measured at V DD =3.3V, T A =25o C. Not 100% Tested.IS61LV6416IS61LV6416LIntegrated Silicon Solution, Inc.5Rev.C 10/14/03ISSI®READ CYCLE SWITCHING CHARACTERISTICS (1) (Over Operating Range)-8 ns -10 ns -12 ns SymbolParameter Min.Max.Min.Max.Min.Max.Unit t RC Read Cycle Time 8—10—12—ns t AA Address Access Time —8—10—12ns t OHA Output Hold Time 3—3—3—ns t ACE CE Access Time —8—10—12ns t DOE OE Access Time —5—5—6ns t HZOE (2)OE to High-Z Output —5—5—6ns t LZOE (2)OE to Low-Z Output 0—0—0—ns t HZCE (2CE to High-Z Output 040506ns t LZCE (2)CE to Low-Z Output 3—3—3—ns t BA LB , UB Access Time —6—6—6ns t HZB LB , UB to High-Z Output 040506ns t LZBLB , UB to Low-Z Output———nsNotes:1.Test conditions assume signal transition times of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V and output loading specified in Figure 1a.2.Tested with the load in Figure 1b. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.3.Not 100% tested.AC TEST CONDITIONSParameterUnit Input Pulse Level0V to 3.0V Input Rise and Fall Times 3 ns Input and Output Timing 1.5V and Reference Level Output LoadSee Figures 1a and 1bAC TEST LOADSFigure 1a.Figure 1b.IS61LV6416IS61LV6416L6Integrated Silicon Solution, Inc.Rev.C 10/14/03ISSI®(1,3)AC WAVEFORMSREAD CYCLE NO. 1(1,2) (Address Controlled) (CS = OE = V IL , UB or LB = V IL )Notes:1.WE is HIGH for a Read Cycle.2.The device is continuously selected. OE , CE , UB , or LB = V IL .3.Address is valid prior to or coincident with CE LOW transition.IS61LV6416IS61LV6416LIntegrated Silicon Solution, Inc.7Rev.C 10/14/03ISSI®WRITE CYCLE SWITCHING CHARACTERISTICS (1,3) (Over Operating Range)-8 ns -10 ns -12 ns SymbolParameter Min.Max.Min.Max.Min.Max.Unit t WC Write Cycle Time 8—10—12—ns t SCE CE to Write End 6—8—9—ns t AW Address Setup Time 8—8—9—ns to Write Endt HA Address Hold from Write End 0—0—0—ns t SA Address Setup Time 0—0—0—ns t PBW LB , UB Valid to End of Write 7—8—9—ns t PWE 1/t PWE 2WE Pulse Width (OE = HIGH/LOW)6—8—9—ns t SD Data Setup to Write End 6—6—6—ns t HD Data Hold from Write End 0—0—0—ns t HZWE (2)WE LOW to High-Z Output —4—5—6ns t LZWE (2)WE HIGH to Low-Z Output3—3—3—nsNotes:1.Test conditions assume signal transition times of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V and output loading specified in Figure 1a.2.Tested with the load in Figure 1b. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.3.The internal write time is defined by the overlap of CE LOW and UB or LB , and WE LOW. All signals must be in valid states to initiate a Write, but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the rising or falling edge of the signal that terminates the write.IS61LV6416IS61LV6416L8Integrated Silicon Solution, Inc.Rev.C 10/14/03ISSI®WRITE CYCLE NO. 1(1,2) (CE Controlled, OE = HIGH or LOW)IS61LV6416IS61LV6416LIntegrated Silicon Solution, Inc.9Rev.C 10/14/03ISSI®WRITE CYCLE NO. 3 (WE Controlled: OE is LOW During Write Cycle)WRITE CYCLE NO. 2(1) (WE Controlled, OE = HIGH during Write Cycle)IS61LV6416IS61LV6416L10Integrated Silicon Solution, Inc.Rev.C 10/14/03ISSI®WRITE CYCLE NO. 4 (LB , UB Controlled, Back-to-Back Write)(1,3)1.The internal Write time is defined by the overlap of CE = LOW, UB and/or LB = LOW, and WE = LOW. All signals must be in valid states to initiate a Write, but any can be deasserted to terminate the Write. The t SA , t HA , t SD , and t HD timing is referenced to the rising or falling edge of the signal that terminates the Write.2.Tested with OE HIGH for a minimum of 4 ns before WE = LOW to place the I/O in a HIGH-Z state.3.WE may be held LOW across many address cycles and the LB , UB pins can be used to control the Write function.IS61LV6416IS61LV6416LISSI®DATA RETENTION WAVEFORM (CE Controlled)DATA RETENTION SWITCHING CHARACTERISTICSSymbolParameterTest ConditionOptions Min.Typ.(1)Max.Unit V DRV DD for Data Retention See Data Retention Waveform 2.0— 3.6V I DRData Retention Current V DD = 2.0V, CE ≥ V DD – 0.2V IS61LV6416—0.510mA IS61LV6416L—0.05 1.5t SDR Data Retention Setup Time See Data Retention Waveform 0——ns t RDRRecovery TimeSee Data Retention Waveformt RC——nsNote 1: Typical values are measured at V DD = 3.0V, T A = 25OC and not 100% tested.IS61LV6416IS61LV6416L ISSI®IS61LV6416ORDERING INFORMATIONSpeed (ns)Order Part No.Package Temperature Range 8IS61LV6416-8T Plastic TSOP Commercial (0°C to +70°C )8IS61LV6416-8BI mini BGA(6mm x 8mm)Industrial (-40°C to +85°C )8IS61LV6416-8TI Plastic TSOP Industrial (-40°C to +85°C )10IS61LV6416-10T Plastic TSOP Commercial (0°C to +70°C )10IS61LV6416-10B mini BGA(6mm x 8mm)Commercial (0°C to +70°C )10IS61LV6416-10K400-mil Plastic SOJ Commercial (0°C to +70°C )10IS61LV6416-10BI mini BGA(6mm x 8mm)Industrial (-40°C to +85°C )10IS61LV6416-10TI Plastic TSOP Industrial (-40°C to +85°C )10IS61LV6416-10KI400-mil Plastic SOJ Industrial (-40°C to +85°C )12IS61LV6416-12B mini BGA(6mm x 8mm)Commercial (0°C to +70°C )12IS61LV6416-12T Plastic TSOP Commercial (0°C to +70°C )12IS61LV6416-12K400-mil Plastic SOJ Commercial (0°C to +70°C )12IS61LV6416-12BI mini BGA(6mm x 8mm)Industrial (-40°C to +85°C )12IS61LV6416-12TI Plastic TSOP Industrial (-40°C to +85°C )12IS61LV6416-12KI400-mil Plastic SOJ Industrial (-40°C to +85°C )IS61LV6416LORDERING INFORMATIONSpeed (ns)Order Part No.Package Temperature Range 8IS61LV6416L-8T Plastic TSOP Commercial (0°C to +70°C )8IS61LV6416L-8BI mini BGA(6mm x 8mm)Industrial (-40°C to +85°C )8IS61LV6416L-8TI Plastic TSOP Industrial (-40°C to +85°C )8IS61LV6416L-8KI400-mil Plastic SOJ Industrial (-40°C to +85°C )10IS61LV6416L-10T Plastic TSOP Commercial (0°C to +70°C )10IS61LV6416L-10BI mini BGA(6mm x 8mm)Industrial (-40°C to +85°C )10IS61LV6416L-10TI Plastic TSOP Industrial (-40°C to +85°C )10IS61LV6416L-10KI400-mil Plastic SOJ Industrial (-40°C to +85°C )PACKAGING INFORMATIONISSI®Copyright © 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time Mini Ball Grid ArrayPackage Code: B (48-pin)PACKAGING INFORMATIONISSI®Copyright © 2002 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time K-400 mil SOJ PACKAGE OUTLINEPACKAGING INFORMATION ISSI®Copyright © 2002 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any timePACKAGING INFORMATIONISSI®Copyright © 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any timePlastic TSOPPackage Code: T (Type II)。

IS64WV102416BLL中文资料

ance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices.
48 A5 47 A6 46 A7 45 A8 44 OE 43 UB 42 LB 41 I/O15 40 I/O14 39 I/O13 38 I/O12 37 GND 36 VDD 35 I/O11 34 I/O10 33 I/O9 32 I/O8 31 NC 30 A9 29 A10 28 A11 27 A12 26 A13 25 A14
Integrated Silicon Solution, Inc. — — 1-800-379-4774
1
Rev.102416ALL IS61WV102416BLL IS64WV102416BLL
48-pin mini BGA (9mmx11mm)
The device is packaged in the JEDEC standard 48-pin TSOP Type I and 48-pin Mini BGA (9mm x 11mm).
A0-A19
DECODER
1024K x 16 MEMORY ARRAY
VDD GND
I/O0-I/O7 Lower Byte
1 23 45 6
A
LB
OE
A0
A1
A2
NC
B
I/O8
UB
A3
A4
CE
I/O0
C
I/O9 I/O10 A5

IS61S6432-166PQ中文资料

IS61S6432ISSI®ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors which may appear in this publication. © Copyright 2001, Integrated Silicon Solution, Inc.FEATURES•Internal self-timed write cycle•Individual Byte Write Control and Global Write •Clock controlled, registered address, data and control•Pentium™ or linear burst sequence control using MODE input•Three chip enables for simple depth expansion and address pipelining•Common data inputs and data outputs •Power-down control by ZZ input•JEDEC 100-Pin TQFP and PQFP package •Single +3.3V power supply•Two Clock enables and one Clock disable to eliminate multiple bank bus contention •Control pins mode upon power-up:– MODE in interleave burst mode – ZZ in normal operation modeThese control pins can be connected to GNDQ or VCCQ to alter their power-up state •Industrial temperature availableDESCRIPTIONThe ISSI IS61S6432 is a high-speed, low-power synchronous static RAM designed to provide a burstable,high-performance, secondary cache for the Pentium™,680X0™, and PowerPC™ microprocessors. It is organized as 65,536 words by 32 bits, fabricated with ISSI 's advanced CMOS technology. The device integrates a 2-bit burst counter, high-speed SRAM core, and high-drive capability outputs into a single monolithic circuit. All synchronous inputs pass through registers controlled by a positive-edge-triggered single clock input.Write cycles are internally self-timed and are initiated by the rising edge of the clock input. Write cycles can be from one to four bytes wide as controlled by the write control inputs.Separate byte enables allow individual bytes to be written.BW1 controls DQ1-DQ8, BW2 controls DQ9-DQ16, BW3controls DQ17-DQ24, BW4 controls DQ25-DQ32,conditioned by BWE being LOW. A LOW on GW input would cause all bytes to be written.Bursts can be initiated with either ADSP (Address Status Processor) or ADSC (Address Status Cache Controller)input pins. Subsequent burst addresses can be generated internally by the IS61S6432 and controlled by the ADV (burst address advance) input pin.Asynchronous signals include output enable (OE ), sleep mode input (ZZ), clock (CLK) and burst mode input (MODE).A HIGH input on the ZZ pin puts the SRAM in the power-down state. When ZZ is pulled LOW (or no connect), the SRAM normally operates after three cycles of the wake-up period. A LOW input, i.e., GND Q , on MODE pin selects LINEAR Burst. A V CCQ (or no connect) on MODE pin selects INTERLEAVED Burst.64K x 32 SYNCHRONOUS PIPELINE STATIC RAMJUNE 2001FAST ACCESS TIME1.ADVANCE INFORMATION ONLY.元器件交易网元器件交易网IS61S6432ISSI®BLOCK DIAGRAMPB Integrated Silicon Solution, Inc. • 1-800-379-4774Rev.BIS61S6432ISSI®PIN CONFIGURATION100-Pin TQFP and PQFP (Top View)PIN DESCRIPTIONSA0-A15Address InputsCLK ClockADSP Processor Address Status ADSC Controller Address StatusADV Burst Address AdvanceBW1-BW4Synchronous Byte Write Enable BWE Byte Write EnableGW Global Write EnableCE1, CE2, CE3Synchronous Chip Enable OE Output EnableDQ1-DQ32Data Input/OutputZZ Sleep ModeMODE Burst Sequence ModeV CC+3.3V Power SupplyGND GroundV CCQ Isolated Output Buffer Supply: +3.3V GND Q Isolated Output Buffer GroundNC No Connect元器件交易网元器件交易网IS61S6432ISSI®TRUTH TABLEAddressOperation Used CE1CE2CE3ADSP ADSC ADV WRITE OE DQ Deselected, Power-down None H X X X L X X X High-Z Deselected, Power-down None L L X L X X X X High-Z Deselected, Power-down None L X H L X X X X High-Z Deselected, Power-down None L L X H L X X X High-Z Deselected, Power-down None L X H H L X X X High-Z Read Cycle, Begin Burst External L H L L X X X L Q Read Cycle, Begin Burst External L H L L X X X H High-Z Write Cycle, Begin Burst External L H L H L X L X D Read Cycle, Begin Burst External L H L H L X H L Q Read Cycle, Begin Burst External L H L H L X H H High-Z Read Cycle, Continue Burst Next X X X H H L H L Q Read Cycle, Continue Burst Next X X X H H L H H High-Z Read Cycle, Continue Burst Next H X X X H L H L Q Read Cycle, Continue Burst Next H X X X H L H H High-Z Write Cycle, Continue Burst Next X X X H H L L X D Write Cycle, Continue Burst Next H X X X H L L X D Read Cycle, Suspend Burst Current X X X H H H H L Q Read Cycle, Suspend Burst Current X X X H H H H H High-Z Read Cycle, Suspend Burst Current H X X X H H H L Q Read Cycle, Suspend Burst Current H X X X H H H H High-Z Write Cycle, Suspend Burst Current X X X H H H L X D Write Cycle, Suspend Burst Current H X X X H H L X D Notes:1.All inputs except OE must meet setup and hold times for the Low-to-High transition of clock (CLK).2.Wait states are inserted by suspending burst.3."X" means don't care. WRITE=L means any one or more byte write enable signals (BW1-BW4) and BWE are LOW or GW isLOW. WRITE=H means all byte write enable signals are HIGH.4.For a Write operation following a Read operation, OE must be HIGH before the input data required setup time and held HIGHthroughout the input data hold time.5.ADSP LOW always initiates an internal READ at the Low-to-High edge of clock. A WRITE is performed by setting one ormore byte write enable signals and BWE LOW or GW LOW for the subsequent L-H edge of clock.PARTIAL TRUTH TABLEFunction GW BWE BW1BW2BW3BW4READ H H X X X XREAD H X H H H HWRITE Byte 1H L L H H HWRITE All Bytes X L L L L LWRITE All Bytes L X X X X XPB Integrated Silicon Solution, Inc. • 1-800-379-4774Rev.BIS61S6432ISSI®INTERLEAVED BURST ADDRESS TABLE (MODE = V CCQ or No Connect)External Address1st Burst Address2nd Burst Address3rd Burst AddressA1A0A1A0A1A0A1A000011011010011101011000111100100ABSOLUTE MAXIMUM RATINGS (1,2,3)Symbol ParameterValue Unit T BIAS Temperature Under Bias –40 to +85°C T STG Storage Temperature –55 to +150°C P D Power Dissipation1.8W I OUTOutput Current (per I/O)100mA V IN , V OUT Voltage Relative to GND for I/O Pins–0.5 to V CCQ + 0.3V V INVoltage Relative to GND for for Address and Control Inputs–0.5 to 5.5VNotes:1.Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.2. This device contains circuity to protect the inputs against damage due to high static voltages or electric fields; however, precautions may be taken to avoid application of any voltage higher than maximum rated voltages to this high-impedance circuit.3. This device contains circuitry that will ensure the output devices are in High-Z at power up.LINEAR BURST ADDRESS TABLE (MODE = GND Q )OPERATING RANGERangeAmbient TemperatureV CCCommercial 0°C to +70°C 3.3V +10%, –5%Industrial–40°C to +85°C3.3V +10%, –5%元器件交易网PB Integrated Silicon Solution, Inc. • 1-800-379-4774Rev.B IS61S6432ISSI®POWER SUPPLY CHARACTERISTICS (Operating Range)1.ADVANCE INFORMATION ONLY.DC ELECTRICAL CHARACTERISTICS (1,2) (Over Operating Range)Symbol Parameter Test Conditions Min.Max.UnitV OH Output HIGH Voltage I OH = –5.0 mA 2.4—V V OL Output LOW Voltage I OL = 5.0 mA—0.4V V IH Input HIGH Voltage 2.0V CCQ + 0.3V V IL Input LOW Voltage –0.30.8V I LI Input Leakage Current GND - V IN - V CCQ (2)Com.–55µA Ind.–1010I LOOutput Leakage CurrentGND - V OUT - V CCQ , OE = V IHCom.–55µAInd.–1010Notes:1.MODE pin have an internal pull-up. ZZ pin has an internal pull-down. These pins may be a No Connect,tied to GND,or tied to V CCQ .2.MODE pin should be tied to Vcc or GND. They exhibit ±30 µA maximum leakage current when tied to - GND + 0.2V or • Vcc – 0.2V.-5-6-7-8Symbol Parameter Test ConditionsMin.Max.Min.Max.Min.Max.Min.Max.Unit I CCAC Operating Device Selected,Com.—175—165—150—140mASupply CurrentAll Inputs = V IL or V IH Ind.—185—175—160—150OE = V IH , Cycle Time • t KC min.I SBStandby Current Device Deselected,Com.—25—25—25—25mAV CC = Max.,Ind.—35—35—35—35CLK Cycle Time • t KC min.I ZZ Power-Down ZZ = V CCQ , CLK Running Com.—5—5—5—5mAMode CurrentAll Inputs - GND + 0.2V Ind.—10—10—10—10or • V CC – 0.2V元器件交易网IS61S6432ISSI®CAPACITANCE (1,2)Symbol Parameter Conditions Max.Unit C IN Input Capacitance V IN = 0V 6pF C OUTInput/Output CapacitanceV OUT = 0V8pFNotes:1.Tested initially and after any design or process changes that may affect these parameters.2.Test conditions: T A = 25°C, f = 1 MHz, Vcc =3.3V.AC TEST CONDITIONSParameterUnit Input Pulse Level0V to 3.0V Input Rise and Fall Times 1.5 ns Input and Output Timing 1.5V and Reference Level Output LoadSee Figures 1 and 2Figure 1Figure 2AC TEST LOADS元器件交易网元器件交易网IS61S6432ISSI®READ CYCLE SWITCHING CHARACTERISTICS (Over Operating Range)1.ADVANCE INFORMATION ONLY.2.Guaranteed but not 100% tested. This parameter is periodically sampled.3.Tested with load in Figure 2.4.Configuration signal MODE is static and must not change during normal operation.PB Integrated Silicon Solution, Inc. • 1-800-379-4774Rev.B元器件交易网IS61S6432ISSI®READ CYCLE SWITCHING CHARACTERISTICS (Over Operating Range) (Continued)-5-6-7-8 Symbol Parameter Min.Max.Min.Max.Min.Max.Min.Max Unitt KC Cycle Time10—12—13—15—nst KH Clock High Time 3.5—4—6—6—nst KL Clock Low Time 3.5—4—6—6—nst KQ Clock Access Time—5—6—7—8nst KQX(1)Clock High to Output Invalid 1.5— 1.5—2—2—nst KQLZ(1,2)Clock High to Output Low-Z0—0—0—0—nst KQHZ(1,2)Clock High to Output High-Z 1.56 1.562626nst OEQ Output Enable to Output Valid—5—6—6—6nst OEQX(1)Output Disable to Output Invalid0—0—0—0—nst OELZ(1,2)Output Enable to Output Low-Z0—0—0—0—nst OEHZ(1,2)Output Disable to Output High-Z—4—5—6—6nst AS Address Setup Time 2.5— 2.5— 2.5— 2.5—nst SS Address Status Setup Time 2.5— 2.5— 2.5— 2.5—nst WS Write Setup Time 2.5— 2.5— 2.5— 2.5—nst CES Chip Enable Setup Time 2.5— 2.5— 2.5— 2.5—nst AVS Address Advance Setup Time 2.5— 2.5— 2.5— 2.5—nst AH Address Hold Time0.5—0.5—0.5—0.5—nst SH Address Status Hold Time0.5—0.5—0.5—0.5—nst WH Write Hold Time0.5—0.5—0.5—0.5—nst CEH Chip Enable Hold Time0.5—0.5—0.5—0.5—nst AVH Address Advance Hold Time0.5—0.5—0.5—0.5—nst CFG(3)Configuration Setup35—45—66.7—80—nsNotes:1.Guaranteed but not 100% tested. This parameter is periodically sampled.2.Tested with load in Figure 2.3.Configuration signal MODE is static and must not change during normal operation.元器件交易网IS61S6432ISSI®READ CYCLE TIMING: PIPELINEPB Integrated Silicon Solution, Inc. • 1-800-379-4774Rev.BWRITE CYCLE SWITCHING CHARACTERISTICS (Over Operating Range)-5-6-7-8 Symbol Parameter Min.Max.Min.Max.Min.Max.Min.Max.Unit t KC Cycle Time10—12—13—15—ns t KH Clock High Time 3.5—4—6—6—ns t KL Clock Low Time 3.5—4—6—6—ns t AS Address Setup Time 2.5— 2.5— 2.5— 2.5—ns t SS Address Status Setup Time 2.5— 2.5— 2.5— 2.5—ns t WS Write Setup Time 2.5— 2.5— 2.5— 2.5—ns t DS Data In Setup Time 2.5— 2.5— 2.5— 2.5—ns t CES Chip Enable Setup Time 2.5— 2.5— 2.5— 2.5—ns t AVS Address Advance Setup Time 2.5— 2.5— 2.5— 2.5—ns t AH Address Hold Time0.5—0.5—0.5—0.5—ns t SH Address Status Hold Time0.5—0.5—0.5—0.5—ns t DH Data In Hold Time0.5—0.5—0.5—0.5—ns t WH Write Hold Time0.5—0.5—0.5—0.5—ns t CEH Chip Enable Hold Time0.5—0.5—0.5—0.5—ns t AVH Address Advance Hold Time0.5—0.5—0.5—0.5—ns t CFG(2)Configuration Setup35—45—52—60—ns Note:1.ADVANCE INFORMATION ONLY.2. Configuration signal MODE is static and must not change during normal operation.WRITE CYCLE TIMINGPB Integrated Silicon Solution, Inc. • 1-800-379-4774Rev.BREAD/WRITE CYCLE SWITCHING CHARACTERISTICS (Over Operating Range)1.ADVANCE INFORMATION ONLY.2.Guaranteed but not 100% tested. This parameter is periodically sampled.3.Tested with load in Figure 2.4.Configuration signal MODE is static and must not change during normal operation.READ/WRITE CYCLE SWITCHING CHARACTERISTICS (Over Operating Range) (Continued)-5-6-7-8 Symbol Parameter Min.Max.Min.Max.Min.Max.Min.Max.Unit t KC Cycle Time10—12—13—15—ns t KH Clock High Time 3.5—4—6—6—ns t KL Clock Low Time 3.5—4—6—6—ns t KQ Clock Access Time—5—6—7—8ns t KQX(1)Clock High to Output Invalid 1.5— 1.5—2—2—ns t KQLZ(1,2)Clock High to Output Low-Z0—0—0—0—ns t KQHZ(1,2)Clock High to Output High-Z 1.56 1.562626ns t OEQ Output Enable to Output Valid—5—6—6—6ns t OEQX(1)Output Disable to Output Invalid0—0—0—0—ns t OELZ(1,2)Output Enable to Output Low-Z0—0—0—0—ns t OEHZ(1,2)Output Disable to Output High-Z—4—5—6—6ns t AS Address Setup Time 2.5— 2.5— 2.5— 2.5—ns t SS Address Status Setup Time 2.5— 2.5— 2.5— 2.5—ns t WS Write Setup Time 2.5— 2.5— 2.5— 2.5—ns t CES Chip Enable Setup Time 2.5— 2.5— 2.5— 2.5—ns t AH Address Hold Time0.5—0.5—0.5—0.5—ns t SH Address Status Hold Time0.5—0.5—0.5—0.5—ns t WH Write Hold Time0.5—0.5—0.5—0.5—ns t CEH Chip Enable Hold Time0.5—0.5—0.5—0.5—ns t CFG(3)Configuration Setup35—45—52—60—ns Notes:1.Guaranteed but not 100% tested. This parameter is periodically sampled.2.Tested with load in Figure 2.3.Configuration signal MODE is static and must not change during normal operation.PB Integrated Silicon Solution, Inc. • 1-800-379-4774Rev.BREAD/WRITE CYCLE TIMING: PIPELINESNOOZE AND RECOVERY CYCLE SWITCHING CHARACTERISTICS(1)(Over Operating Range)1.Configuration signal MODE is static and must not change during normal operation.2.ADVANCE INFORMATION ONLY.3.Guaranteed but not 100% tested. This parameter is periodically sampled.4.Tested with load in Figure 2.5.The assertion of ZZ allows the SRAM to enter a lower power state than when deselected within the time specified. Dataretention is guaranteed when ZZ is asserted and clock remains active.6.ADSC and ADSP must not be asserted for at least two cycles after leaving ZZ state.PB Integrated Silicon Solution, Inc. • 1-800-379-4774Rev.BSNOOZE AND RECOVERY CYCLE SWITCHING CHARACTERISTICS(1)(Over Operating Range) (Continued)-5-6-7-8 Symbol Parameter Min.Max.Min.Max.Min.Max.Min.Max.Unit t KC Cycle Time10—12—13—15—ns t KH Clock High Time 3.5—4—6—6—ns t KL Clock Low Time 3.5—4—6—6—ns t KQ Clock Access Time—5—6—7—8ns t KQX(2)Clock High to Output Invalid 1.5— 1.5—2—2—ns t KQLZ(2,3)Clock High to Output Low-Z0—0—0—0—ns t KQHZ(2,3)Clock High to Output High-Z 1.56 1.562626ns t OEQ Output Enable to Output Valid—5—6—6—6ns t OEQX(2)Output Disable to Output Invalid0—0—0—0—ns t OELZ(2,3)Output Enable to Output Low-Z0—0—0—0—ns t OEHZ(2,3)Output Disable to Output High-Z—4—5—6—6ns t AS Address Setup Time 2.5— 2.5— 2.5— 2.5—ns t SS Address Status Setup Time 2.5— 2.5— 2.5— 2.5—ns t CES Chip Enable Setup Time 2.5— 2.5— 2.5— 2.5—ns t AH Address Hold Time 2.5— 2.5— 2.5— 2.5—ns t SH Address Status Hold Time 2.5— 2.5— 2.5— 2.5—ns t CEH Chip Enable Hold Time 2.5— 2.5— 2.5— 2.5—ns t ZZS(4)ZZ Standby2—2—2—2—cyc t ZZREC(5)ZZ Recovery2—2—2—2—cyc Notes:1.Configuration signal MODE is static and must not change during normal operation.2.Guaranteed but not 100% tested. This parameter is periodically sampled.3.Tested with load in Figure 2.4.The assertion of ZZ allows the SRAM to enter a lower power state than when deselected within the time specified. Dataretention is guaranteed when ZZ is asserted and clock remains active.5.ADSC and ADSP must not be asserted for at least two cycles after leaving ZZ state.SNOOZE AND RECOVERY CYCLE TIMINGPB Integrated Silicon Solution, Inc. • 1-800-379-4774Rev.BORDERING INFORMATIONCommercial Range: 0°C to +70°CFrequency (MHz)Order Part NumberPackage 200IS61S6432-200TQ TQFP IS61S6432-200PQ PQFP 166IS61S6432-166TQ TQFP IS61S6432-166PQ PQFP 133IS61S6432-133TQ TQFP IS61S6432-133PQ PQFP 117IS61S6432-117TQ TQFP IS61S6432-117PQ PQFP 100IS61S6432-5TQ TQFP IS61S6432-5PQ PQFP 83IS61S6432-6TQ TQFP IS61S6432-6PQ PQFP 75IS61S6432-7TQ TQFP IS61S6432-7PQ PQFP 66IS61S6432-8TQ TQFP IS61S6432-8PQPQFPNOTICEIntegrated Silicon Solution, Inc., reserves the right to make changes to the products contained in this publication in order to improve design, performance or reliability. Integrated Silicon Solution, Inc. assumes no responsibility for the use of any circuits described herein, conveys no license under any patent or other right, and makes no representation that the circuits are free of patent infringement. Charts and schedules contained herein reflect representative operating parameters, and may vary depending upon a user's specific application. While the information in this publication has been carefully checked, Integrated Silicon Solution, Inc.shall not be liable for any damages arising as a result of any error or omission.Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reasonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written assurances, to its satisfaction, that: (a) the risk of injury or damage has been minimized; (b) the user assumes all such risks; and (c) potential liability of Integrated Silicon Solution, Inc. is adequately protected under the circumstances.Copyright 1998 Integrated Silicon Solution, Inc.Reproduction in whole or in part, without the prior written consent of Integrated Silicon Solution, Inc., is prohibited.ORDERING INFORMATIONIndustrial Range: –40°C to +85°CFrequency (MHz)Order Part Number Package 117IS61S6432-117TQI TQFP IS61S6432-117PQI PQFP 100IS61S6432-5TQI TQFP IS61S6432-5PQI PQFP 83IS61S6432-6TQI TQFP IS61S6432-6PQI PQFP 75IS61S6432-7TQI TQFP IS61S6432-7PQI PQFP 66IS61S6432-8TQI TQFP IS61S6432-8PQIPQFPISSI®Integrated Silicon Solution, Inc.2231 Lawson Lane Santa Clara, CA 95054Tel: 1-800-379-4774Fax: (408) 588-0806E-mail: sales@。

IS64WV12816BLL中文资料

IS61WV12816BLL®2Integrated Silicon Solution, Inc. — — 1-800-379-4774Rev. C ISSI®IS61WV12816BLL IS64WV12816BLL1234567891011121314151617181920212244434241403938373635343332313029282726252423A4A3A2A1A0CE I/O0I/O1I/O2I/O3V DD GND I/O4I/O5I/O6I/O7WE A16A15A14A13A12A5A6A7OE UB LB I/O15I/O14I/O13I/O12GND V DD I/O11I/O10I/O 9I/O8NC A8A 9A10A11NC44-Pin TSOP (Type II) (T)PIN DESCRIPTIONSA0-A16Address Inputs I/O0-I/O15Data Inputs/Outputs CE Chip Enable Input OE Output Enable Input WE Write Enable InputLB Lower-byte Control (I/O0-I/O7)UB Upper-byte Control (I/O8-I/O15)NC No Connection V DD Power GNDGroundTRUTH TABL EI/O PINModeWE CE OE LB UB I/O0-I/O7I/O8-I/O15V DD Current Not Selected X H X X X High-Z High-Z I SB 1, I SB 2Output Disabled H L H X X High-Z High-Z I CCX L X H H High-Z High-Z ReadH L L L H D OUT High-Z I CCH L L H L High-Z D OUT H L L L L D OUT D OUT Write L L X L H D IN High-Z I CCL L X H L High-Z D IN LLXLLD IND INPIN CONFIGURATIONISSI®IS61WV12816BLL IS64WV12816BLLPIN DESCRIPTIONSA0-A16Address Inputs I/O0-I/O15Data Inputs/Outputs CEChip Enable Input OE Output Enable Input WE Write Enable InputLB Lower-byte Control (I/O0-I/O7)UB Upper-byte Control (I/O8-I/O15)NC No Connection V DD Power GNDGround48-Pin mini BGA (B)PIN CONFIGURATION1 2 3 4 5 6A B C D E F G HLB OE A0A1A2NC I/O 8UB A3A4CE I/O 0I/O 9I/O 10A5A6I/O 1I/O 2GND I/O 11NC A7I/O 3V DD V DD I/O 12NC A16I/O 4GND I/O 14I/O 13A14A15I/O 5I/O 6I/O 15NC A12A13WE I/O 7NCA8A 9A10A11NC4Integrated Silicon Solution, Inc. — — 1-800-379-4774Rev. C ISSI®IS61WV12816BLL IS64WV12816BLLOPERATING RANGE (V DD )Range Ambient TemperatureV DD (15 n S )V DD (12 n S )Industrial –40°C to +85°C 2.5V-3.6V 3.3V + 10%Automotive–40°C to +125°C2.5V-3.6VABSOLUTE MAXIMUM RATINGS (1)Symbol ParameterValue Unit V DD Power Supply Voltage Relative to GND –0.5 to 4.0V V V TERM Terminal Voltage with Respect to GND –0.5 to V DD + 0.5V T STG Storage Temperature –65 to + 150°C P T Power Dissipation1.0WNote:1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the opera-tional sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.DC ELECTRICAL CHARACTERISTICS (Over Operating Range)V DD = 2.5V-3.6VSymbol ParameterTest ConditionsMin.Max.Unit V OH Output HIGH Voltage V DD = Min., I OH = –1.0 mA 1.8—V V OL Output LOW Voltage V DD = Min., I OL = 1.0 mA—0.4V V IH Input HIGH Voltage 2.0V DD + 0.3V V IL Input LOW Voltage (1)–0.30.4V I LI Input Leakage GND ≤ V IN ≤ V DD–11µA I LO Output LeakageGND ≤ V OUT ≤ V DD , Outputs Disabled–11µANote:1.V IL (min.) = –0.3V DC; V IL (min.) = –2.0V AC (pulse width - 2.0 ns). Not 100% tested.V IH (max.) = V DD + 0.3V DC; V IH (max.) = V DD + 2.0V AC (pulse width - 2.0 ns). Not 100% tested.DC ELECTRICAL CHARACTERISTICS (Over Operating Range)V DD = 3.3V + 10%Symbol ParameterTest ConditionsMin.Max.Unit V OH Output HIGH Voltage V DD = Min., I OH = –4.0 mA 2.4—V V OL Output LOW Voltage V DD = Min., I OL = 8.0 mA—0.4V V IH Input HIGH Voltage 2V DD + 0.3V V IL Input LOW Voltage (1)–0.30.8V I LI Input Leakage GND ≤ V IN ≤ V DD–11µA I LO Output LeakageGND ≤ V OUT ≤ V DD , Outputs Disabled–11µANote:1.V IL (min.) = –0.3V DC; V IL (min.) = –2.0V AC (pulse width - 2.0 ns). Not 100% tested.V IH (max.) = V DD + 0.3V DC; V IH (max.) = V DD + 2.0V AC (pulse width - 2.0 ns). Not 100% tested.ISSI®IS61WV12816BLL IS64WV12816BLLPOWER SUPPLY CHARACTERISTICS (1) (Over Operating Range)-12ns -15 ns Symbol Parameter Test Conditions Min.Max.Min.Max.Unit I CCV DD Operating V DD = Max., CE = V IL Com.—35—30mASupply CurrentI OUT = 0 mA, f = Max.Ind.—40—35Auto —40typ.(2)—25—20I SB 1TTL Standby V DD = Max.,Com.—20—20mACurrent V IN = V IH or V IL Ind.—20—20(TTL Inputs)CE ≥ V IH , f = max Auto —30I SB 2CMOS Standby V DD = Max.,Com.—750—750μA CurrentCE ≥ V DD – 0.2V,Ind.—900—900μA (CMOS Inputs)V IN ≥ V DD – 0.2V, or Auto —6mA V IN ≤ 0.2V , f = 0typ.(2)—400—400μANote:1.At f = f MAX , address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.2.Typical values are measured at V DD =3.3V, T A =250C. Not 100% tested.CAPACITANCE (1)Symbol Parameter Conditions Max.Unit C IN Input Capacitance V IN = 0V 6pF C OUT Input/Output CapacitanceV OUT = 0V8pFNote:1. Tested initially and after any design or process changes that may affect these parameters.6Integrated Silicon Solution, Inc. — — 1-800-379-4774Rev. C ISSI®IS61WV12816BLL IS64WV12816BLLAC TEST LOADSFigure 1.Figure 2.READ CYCLE SWITCHING CHARACTERISTICS (1) (Over Operating Range)-12 ns -15 ns SymbolParameter Min.Max.Min.Max.Unit t RC Read Cycle Time 12—15—ns t AA Address Access Time —12—15ns t OHA Output Hold Time 3—3—ns t ACE CE Access Time —12—15ns t DOE OE Access Time —5—7ns t HZOE (2)OE to High-Z Output —5—6ns t LZOE (2)OE to Low-Z Output 0—0—ns t HZCE (2)CE to High-Z Output 0506ns t LZCE (2)CE to Low-Z Output 3—3—ns t BA LB , UB Access Time —5—7ns t HZB (2)LB , UB to High-Z Output 0506ns t LZB (2)LB , UB to Low-Z Output——nsNotes:1.Test conditions assume signal transition times of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0V to 3.0V and output loading specified in Figure 1.2.Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.AC TEST CONDITIONSParameterUnit Unit (2.5V-3.6V)(3.3V + 10%)Input Pulse Level0.4V to V DD -0.3V0.4V to V DD -0.3VInput Rise and Fall Times 1.5ns 1.5ns Input and Output Timing V DD /2V DD /2 + 0.05and Reference Level (V Ref )Output LoadSee Figures 1 and 2See Figures 1 and 2ISSI®IS61WV12816BLL IS64WV12816BLLREAD CYCLE NO. 2(1,3)AC WAVEFORMSREAD CYCLE NO. 1(1,2) (Address Controlled) (CE = OE = V IL , UB or LB = V IL )1. WE is HIGH for a Read Cycle.2. The device is continuously selected. OE , CE , UB , or LB = V IL .3. Address is valid prior to or coincident with CE LOW transition.ISSI®IS61WV12816BLLIS64WV12816BLLWRITE CYCLE SWITCHING CHARACTERISTICS(1,3)(Over Operating Range)-12 ns-15 nsSymbol Parameter Min.Max.Min.Max.Unitt WC Write Cycle Time12—15—nst SCE CE to Write End8—10—nst AW Address Setup Time8—10—nsto Write Endt HA Address Hold from Write End0—0—nst SA Address Setup Time0—0—nst PBW LB, UB Valid to End of Write9—10—nst PWE1WE Pulse Width (OE = HIGH)8—10—nst PWE2WE Pulse Width (OE = LOW)10—12—nst SD Data Setup to Write End6—7—nst HD Data Hold from Write End0—0—nst HZWE(3)WE LOW to High-Z Output—5—7nst LZWE(3)WE HIGH to Low-Z Output0—0—nsNotes:1.Test conditions assume signal transition times of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0V to3.0V and output loading specified in Figure 1.2.The internal write time is defined by the overlap of CE LOW and UB or LB, and WE LOW. All signals must be in valid statesto initiate a Write, but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the rising or falling edge of the signal that terminates the write.3.Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.8Integrated Silicon Solution, Inc. — — 1-800-379-4774Rev. CISSI®IS61WV12816BLL IS64WV12816BLLWRITE CYCLE NO. 1(1,2) (CE Controlled, OE = HIGH or LOW)ISSI®IS61WV12816BLLIS64WV12816BLLWRITE CYCLE NO. 2(1)(WE Controlled, OE = HIGH during Write Cycle)10Integrated Silicon Solution, Inc. — — 1-800-379-4774Rev. CISSI®IS61WV12816BLL IS64WV12816BLLWRITE CYCLE NO. 4 (LB , UB Controlled, Back-to-Back Write) (1,3)1. The internal Write time is defined by the overlap of CE = LOW, UB and/or LB = LOW, and WE = LOW. All signals must be in valid states to initiate a Write, but any can be deasserted to terminate the Write. The t SA , t HA , t SD , and t HD timing is referenced to the rising or falling edge of the signal that terminates the Write.2. Tested with OE HIGH for a minimum of 4 ns before WE = LOW to place the I/O in a HIGH-Z state.3. WE may be held LOW across many address cycles and the LB , UB pins can be used to control the Write function.ISSI®IS61WV12816BLL IS64WV12816BLLDATA RETENTION WAVEFORM (CE Controlled)DATA RETENTION SWITCHING CHARACTERISTICSSymbolParameterTest ConditionOptions Min.Typ.(1)Max.Unit V DRV DD for Data Retention See Data Retention Waveform 1.8— 3.6V I DRData Retention Current V DD = 2.0V, CE ≥ V DD – 0.2V Ind.—0.40.9mA Auto—0.46mA t SDR Data Retention Setup Time See Data Retention Waveform 0——ns t RDRRecovery TimeSee Data Retention Waveformt RC——nsNote 1: Typical values are measured at V DD = 3.3V, T A = 25OC. Not 100% tested.ISSI®IS61WV12816BLL IS64WV12816BLLORDERING INFORMATION:Industrial Range: –40°C to +85°CSpeed (ns)Order Part No.Package12 (151)IS61WV12816BLL-12BI mini BGA (6mm x 8mm)IS61WV12816BLL-12BLI mini BGA (6mm x 8mm), Lead-free IS61WV12816BLL-12TI Plastic TSOP (Type II)IS61WV12816BLL-12TLIPlastic TSOP (Type II), Lead-freeNote:1.Speed = 12ns for V DD = 3.3V + 10%. Speed = 15ns for V DD =2.5V-3.6VAutomotive Range: –40°C to +125°CSpeed (ns)Order Part No.Package15IS64WV12816BLL-15BA3mini BGA (6mm x 8mm)IS64WV12816BLL-15TA3Plastic TSOP (Type II)IS64WV12816BLL-15TLA3Plastic TSOP (Type II), Lead-freePACKAGING INFORMATIONISSI®Copyright © 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to Mini Ball Grid ArrayPackage Code: B (48-pin)PACKAGING INFORMATIONISSI®Copyright © 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any timewithout notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to Plastic TSOPPackage Code: T (Type II)。

芯片命名规则

电子元器件命名- -电子元器件,又叫电子芯片,半导体集成电路,广泛应用于各种电子电器设备上.封装形式:封装形式是指安装半导体集成电路芯片用的外壳.它不仅起着安装,固定,密封,保护芯片及增强电热性能等方面的作用,而且还通过芯片上的接点用导线连接到封装外壳的引脚上,这些引脚又通过印刷电路板上的导线与其他器件相连接.衡量一个芯片封装技术先进与否的重要指标是芯片面积与封装面积之比,这个比值越接近1越好.封装大致经过了如下发展进程:结构方面:TO->DIP->LCC->QFP->BGA ->CSP;材料方面:金属,陶瓷->陶瓷,塑料->塑料;引脚形状:长引线直插->短引线或无引线贴装->球状凸点;装配方式:通孔插装->表面组装->直接安装.英文简称英文全称中文解释图片DIPDouble In-line Package双列直插式封装.插装型封装之一,引脚从封装两侧引出,封装材料有塑料和陶瓷两种.DIP是最普及的插装型封装,应用范围包括标准逻辑IC,存贮器LSI,微机电路等.PLCCPlastic Leaded Chip CarrierPLCC封装方式,外形呈正方形,32脚封装,四周都有管脚,外形尺寸比DIP封装小得多.PLCC封装适合用SMT表面安装技术在PCB上安装布线,具有外形尺寸小,可靠性高的优点.PQFPPlastic Quad Flat PackagePQFP封装的芯片引脚之间距离很小,管脚很细,一般大规模或超大规模集成电路采用这种封装形式,其引脚数一般都在100以上.SOPSmall Outline Package1968～1969年菲为浦公司就开发出小外形封装(SOP).以后逐渐派生出SOJ(J型引脚小外形封装),TSOP(薄小外形封装),VSOP(甚小外形封装),SSOP(缩小型SOP),TSSOP(薄的缩小型SOP)及SOT(小外形晶体管),SOIC(小外形集成电路)等.模拟滤波器光纤通信高速信号处理和转换无线/射频光线通讯,模拟显示支持电路高频模拟和混合信号ASIC数字转换器,接口,电源管理,电池监控DC/DC电源电压基准MAXIM前缀是"MAX".DALLAS则是以"DS"开头.MAX×××或MAX××××说明:1后缀CSA,CWA 其中C表示普通级,S表示表贴,W 表示宽体表贴.2 后缀CWI表示宽体表贴,EEWI宽体工业级表贴,后缀MJA或883为军级.3 CPA,BCPI,BCPP,CPP,CCPP,CPE,CPD,ACPA后缀均为普通双列直插.举例MAX202CPE,CPE普通ECPE普通带抗静电保护MAX202EEPE 工业级抗静电保护(-45℃-85℃) 说明E 指抗静电保护MAXIM数字排列分类1字头模拟器2字头滤波器3字头多路开关4字头放大器5字头数模转换器6字头电压基准7字头电压转换8字头复位器9字头比较器DALLAS命名规则例如DS1210N.S. DS1225Y-100IND N=工业级S=表贴宽体MCG=DIP封Z=表贴宽体MNG=DIP工业级IND=工业级QCG=PLCC封Q=QFP 下面是MAXIM的命名规则:三字母后缀:例如:MAX358CPDC = 温度范围P = 封装类型D = 管脚数温度范围:C = 0℃至70℃(商业级)I = -20℃至+85℃(工业级)E = -40℃至+85℃(扩展工业级)A = -40℃至+85℃(航空级)M = -55℃至+125℃(军品级)封装类型:A SSOP(缩小外型封装)B CERQUADC TO-220, TQFP(薄型四方扁平封装)D 陶瓷铜顶封装E 四分之一大的小外型封装F 陶瓷扁平封装H 模块封装, SBGA(超级球式栅格阵列, 5x5 TQFP) J CERDIP (陶瓷双列直插)K TO-3 塑料接脚栅格阵列L LCC (无引线芯片承载封装)M MQFP (公制四方扁平封装)N 窄体塑封双列直插P 塑封双列直插Q PLCC (塑料式引线芯片承载封装)R 窄体陶瓷双列直插封装(300mil)S 小外型封装T TO5,TO-99,TO-100U TSSOP,μMAX,SOTW 宽体小外型封装(300mil)X SC-70(3脚,5脚,6脚)Y 窄体铜顶封装Z TO-92,MQUAD/D 裸片/PR 增强型塑封/W 晶圆DSP信号处理器放大器工业用器件通信电源管理移动通信视频/图像处理器等模拟A/D D/A 转换器传感器模拟器件AD产品以"AD","ADV"居多,也有"OP"或者"REF","AMP","SMP","SSM","TMP","TMS"等开头的.后缀的说明:1,后缀中J表示民品(0-70℃),N表示普通塑封,后缀中带R表示表示表贴。

电子元件封装大全及封装常识

电子元件封装大全及封装常识一、什么叫封装封装，就是指把硅片上的电路管脚,用导线接引到外部接头处,以便与其它器件连接.封装形式是指安装半导体集成电路芯片用的外壳。

它不仅起着安装、固定、密封、保护芯片及增强电热性能等方面的作用，而且还通过芯片上的接点用导线连接到封装外壳的引脚上，这些引脚又通过印刷电路板上的导线与其他器件相连接，从而实现内部芯片与外部电路的连接。

因为芯片必须与外界隔离，以防止空气中的杂质对芯片电路的腐蚀而造成电气性能下降。

另一方面，封装后的芯片也更便于安装和运输。

由于封装技术的好坏还直接影响到芯片自身性能的发挥和与之连接的PCB(印制电路板)的设计和制造，因此它是至关重要的。

衡量一个芯片封装技术先进与否的重要指标是芯片面积与封装面积之比，这个比值越接近1越好。

封装时主要考虑的因素：1、芯片面积与封装面积之比为提高封装效率，尽量接近1：1；2、引脚要尽量短以减少延迟，引脚间的距离尽量远，以保证互不干扰，提高性能；3、基于散热的要求，封装越薄越好。

封装主要分为DIP双列直插和SMD贴片封装两种。

从结构方面，封装经历了最早期的晶体管TO（如TO-89、TO92）封装发展到了双列直插封装，随后由PHILIP 公司开发出了SOP小外型封装，以后逐渐派生出SOJ（J型引脚小外形封装）、TSOP（薄小外形封装）、VSOP（甚小外形封装）、SSOP（缩小型SOP）、TSSOP （薄的缩小型SOP）及SOT（小外形晶体管）、SOIC（小外形集成电路）等。

从材料介质方面，包括金属、陶瓷、塑料、塑料，目前很多高强度工作条件需求的电路如军工和宇航级别仍有大量的金属封装。

封装大致经过了如下发展进程：结构方面：TO－>DIP－>PLCC－>QFP－>BGA －>CSP；材料方面：金属、陶瓷－>陶瓷、塑料－>塑料；引脚形状：长引线直插－>短引线或无引线贴装－>球状凸点；装配方式：通孔插装－>表面组装－>直接安装二、具体的封装形式1、 SOP/SOIC封装SOP是英文Small Outline Package 的缩写，即小外形封装。

IS61LPS51236A中文资料

Integrated Silicon Solution, Inc. — 1-800-379-47741Rev.D 02/11/05ISSI®Copyright © 2005 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products.IS61VPS25672A IS61LPS25672A IS61VPS51236A IS61LPS51236A IS61VPS102418A IS61LPS102418A FEATURES•Internal self-timed write cycle•Individual Byte Write Control and Global Write •Clock controlled, registered address, data and control •Burst sequence control using MODE input •Three chip enable option for simple depth expansion and address pipelining •Common data inputs and data outputs •Auto Power-down during deselect •Single cycle deselect•Snooze MODE for reduced-power standby •JTAG Boundary Scan for PBGA package •Power SupplyLPS: V DD 3.3V + 5%, V DDQ 3.3V/2.5V + 5%VPS: V DD 2.5V + 5%, V DDQ 2.5V + 5%•JEDEC 100-Pin TQFP, 119-ball PBGA, 165-ball PBGA, and 209-ball (x72) packages •Lead-free availableDESCRIPTIONThe ISSI IS61LPS/VPS51236A, IS61LPS/VPS102418A,and IS61LPS/VPS25672A are high-speed, low-power syn-chronous static RAMs designed to provide burstable, high-performance memory for communication and networking applications. The IS61LPS/VPS51236A is organized as 524,288 words by 36 bits, the IS61LPS/VPS102418A is organized as 1,048,576 words by 18 bits, and the IS61LPS/VPS25672A is organized as 262,144 words by 72 bits.Fabricated with ISSI 's advanced CMOS technology, the device integrates a 2-bit burst counter, high-speed SRAM core, and high-drive capability outputs into a single mono-lithic circuit. All synchronous inputs pass through regis-ters controlled by a positive-edge-triggered single clock input.Write cycles are internally self-timed and are initiated by the rising edge of the clock input. Write cycles can be one to four bytes wide as controlled by the write control inputs.Separate byte enables allow individual bytes to be written.The byte write operation is performed by using the byte write enable (BWE ) input combined with one or more individual byte write signals (BWx ). In addition, Global Write (GW ) is available for writing all bytes at one time,regardless of the byte write controls.Bursts can be initiated with either ADSP (Address Status Processor) or ADSC (Address Status Cache Controller)input pins. Subsequent burst addresses can be generated internally and controlled by the ADV (burst address advance) input pin.The mode pin is used to select the burst sequence order,Linear burst is achieved when this pin is tied LOW.Interleave burst is achieved when this pin is tied HIGH or left floating.256K x 72, 512K x 36, 1024K x 1818Mb SYNCHRONOUS PIPELINED,SINGLE CYCLE DESELECT STATIC RAMFEBRUARY 2005FAST ACCESS TIMESymbol Parameter250200Units t KQ Clock Access Time 2.6 3.1ns t KCCycle Time 45ns Frequency250200MHzIS61VPS25672A, IS61LPS25672AIS61VPS51236A,IS61LPS51236A, IS61VPS102418A, IS61LPS102418A ISSI®BLOCK DIAGRAM2Integrated Silicon Solution, Inc. — 1-800-379-4774Rev.D02/11/05Integrated Silicon Solution, Inc. — 1-800-379-47743Rev.D 02/11/05IS61VPS25672A, IS61LPS25672AIS61VPS51236A,IS61LPS51236A, IS61VPS102418A, IS61LPS102418AISSI®165-PIN BGA165-Ball, 13x15 mm BGA 1mm Ball Pitch, 11x15 Ball Array119-PIN BGA119-Ball, 14x22 mm BGA1mm Ball Pitch, 7x17 Ball Array209-BALL BGA209-Ball, 14 mm x 22 mm BGA 1 mm Ball Pitch, 11 x 19 Ball Array4Integrated Silicon Solution, Inc. — 1-800-379-4774Rev.D 02/11/05IS61VPS25672A, IS61LPS25672AIS61VPS51236A,IS61LPS51236A, IS61VPS102418A, IS61LPS102418AISSI®PIN CONFIGURATION — 256K X 72, 209-Ball PBGA (TOP VIEW)1234567891011A DQg DQg A CE2ADSP ADSC ADV CE2A DQb DQbB DQg DQg BW c BW g NC BWE A BW b BW f DQb DQb C DQg DQg BW h BW d NC CE NC BW e BW a DQb DQbD DQg DQg VSS NC NC OE GW NC VSS DQb DQb E DQPg DQPc V DDQ V DDQ V DD V DD V DD V DDQ V DDQ DQPf DQPbF DQc DQc VSS VSS VSS NC VSS VSS VSS DQf DQfG DQc DQc V DDQ V DDQ V DD NC V DD V DDQ V DDQ DQf DQfH DQc DQc VSS VSS VSS NC VSS VSS VSS DQf DQf J DQc DQc V DDQ V DDQ V DD NC V DD V DDQ V DDQ DQf DQf K NC NC CLK NC VSS NC VSS NC NC NC NC L DQh DQh V DDQ V DDQ V DD NC V DD V DDQ V DDQ DQa DQa M DQh DQh VSS VSS VSS NC VSS VSS VSS DQa DQa N DQh DQh V DDQ V DDQ V DD NC V DD V DDQ V DDQ DQa DQa P DQh DQh VSS VSS VSS ZZ VSS VSS VSS DQa DQa R DQPd DQPh V DDQ V DDQ V DD V DD V DD V DDQ V DDQ DQPa DQPe T DQd DQd VSS NC NC MODE NC NC VSS DQe DQe U DQd DQd NC A A A A A NC DQe DQe V DQd DQd A A A A1A A A DQe DQe WDQdDQdTMSTDIAA0ATDOTCKDQeDQe11 x 19 Ball BGA—14 x 22 mm 2 Body—1 mm Ball PitchPIN DESCRIPTIONSSymbolPin NameA Address InputsA0, A1Synchronous Burst Address Inputs ADV Synchronous Burst Address AdvanceADSP Address Status Processor ADSC Address Status Controller GW Global Write Enable CLKSynchronous Clock CE , CE2, CE2Synchronous Chip Select BW x (x=a,b,c,d Synchronous Byte Write e,f,g,h)ControlsSymbol Pin Name BWE Byte Write Enable OE Output Enable ZZ Power Sleep Mode MODE Burst Sequence Selection TCK, TDO JTAG PinsTMS, TDI NC No ConnectDQx Data Inputs/Outputs DQPx Data Inputs/Outputs V DD 3.3V/2.5V Power SupplyV DDQIsolated Output Power Supply 3.3V /2.5V VssGroundIntegrated Silicon Solution, Inc. — 1-800-379-47745Rev.D 02/11/05IS61VPS25672A, IS61LPS25672AIS61VPS51236A,IS61LPS51236A, IS61VPS102418A, IS61LPS102418AISSI®119 BGA PACKAGE PIN CONFIGURATION-512K X 36 (TOP VIEW)PIN DESCRIPTIONS1234567A V DDQ A A ADSP A A V DDQB NC A A ADSC A A NC C NC A A V DD A A NC D DQc DQPc Vss NC Vss DQPb DQbE DQc DQc Vss CE Vss DQb DQbF V DDQ DQc Vss OE Vss DQb V DDQG DQc DQc BWc ADV BWb DQb DQbH DQc DQc Vss GW Vss DQb DQb J V DDQ V DD NC V DD NC V DD V DDQ K DQd DQd Vss CLK Vss DQa DQa L DQd DQd BWd NC BWa DQa DQa M V DDQ DQd Vss BWE Vss DQa V DDQ N DQd DQd Vss A 1*Vss DQa DQa P DQd DQPd Vss A 0*Vss DQPa DQa R NC A MODE V DD NC A NC T NC NC A A A NC ZZ UV DDQTMSTDITCKTDONC V DDQ SymbolPin NameA Address InputsA0, A1Synchronous Burst Address Inputs ADV Synchronous Burst Address AdvanceADSP Address Status Processor ADSC Address Status Controller GW Global Write Enable CLK Synchronous Clock CESynchronous Chip Select BW x (x=a-d)Synchronous Byte Write Controls BWEByte Write EnableSymbol Pin Name OE Output Enable ZZ Power Sleep Mode MODE Burst Sequence Selection TCK, TDO JTAG PinsTMS, TDI NC No Connect DQa-DQd Data Inputs/Outputs DQPa-Pd Output Power Supply V DD Power Supply V DDQ Output Power Supply VssGround Note: * A 0 and A 1 are the two least significant bits (LSB) of the address field and set the internal burst counter if burst is desired.6Integrated Silicon Solution, Inc. — 1-800-379-4774Rev.D 02/11/05IS61VPS25672A, IS61LPS25672AIS61VPS51236A,IS61LPS51236A, IS61VPS102418A, IS61LPS102418AISSI®119 BGA PACKAGE PIN CONFIGURATION 1M X 18 (TOP VIEW)PIN DESCRIPTIONSNote: * A 0 and A 1 are the two least significant bits (LSB) of the address field and set the internal burst counter if burst is desired.1234567A V DDQ A A ADSP A A V DDQB NC A A ADSC A A NC C NC A A V DD A A NC D DQb NC Vss NC Vss DQPa NCE NC DQb Vss CE Vss NC DQaF V DDQ NC Vss OE Vss DQa V DDQG NC DQb BWb ADV Vss NC DQaH DQb NC Vss GW Vss DQa NC J V DDQ V DD NC V DD NC V DD V DDQ K NC DQb Vss CLK Vss NC DQa L DQb NC Vss NC BWa DQa NC M V DDQ DQb Vss BWE Vss NC V DDQ N DQb NC Vss A 1*Vss DQa NC P NC DQPb Vss A 0*Vss NC DQa R NC A MODE V DD NC A NC T NC A A NC A A ZZ UV DDQTMSTDITCKTDONC V DDQ SymbolPin NameA Address InputsA0, A1Synchronous Burst Address Inputs ADV Synchronous Burst Address AdvanceADSP Address Status Processor ADSC Address Status Controller GW Global Write Enable CLK Synchronous Clock CESynchronous Chip Select BW x (x=a,b)Synchronous Byte Write Controls BWEByte Write EnableSymbol Pin Name OE Output Enable ZZ Power Sleep Mode MODE Burst Sequence Selection TCK, TDO JTAG PinsTMS, TDI NC No Connect DQa-DQb Data Inputs/Outputs DQPa-Pb Output Power Supply V DD Power Supply V DDQ Output Power Supply VssGroundIntegrated Silicon Solution, Inc. — 1-800-379-47747Rev.D 02/11/05IS61VPS25672A, IS61LPS25672AIS61VPS51236A,IS61LPS51236A, IS61VPS102418A, IS61LPS102418AISSI®PIN DESCRIPTIONS165 PBGA PACKAGE PIN CONFIGURATION512K X 36 (TOP VIEW)Note: * A 0 and A 1 are the two least significant bits (LSB) of the address field and set the internal burst counter if burst is desired.1234567891011A NC A CE BWc BWb CE2BWE ADSC ADV A NC B NC A CE2BWd BWa CLK GW OE ADSP A NC C DQPc NC V DDQ Vss Vss Vss Vss Vss V DDQ NC DQPbD DQc DQc V DDQ V DD Vss Vss Vss V DD V DDQ DQb DQbE DQc DQc V DDQ V DD Vss Vss Vss V DD V DDQ DQb DQbF DQc DQc V DDQ V DD Vss Vss Vss V DD V DDQ DQb DQbG DQc DQc V DDQ V DD Vss Vss Vss V DD V DDQ DQb DQbH NC Vss NC V DD Vss Vss Vss V DD NC NC ZZ J DQd DQd V DDQ V DD Vss Vss Vss V DD V DDQ DQa DQa K DQd DQd V DDQ V DD Vss Vss Vss V DD V DDQ DQa DQa L DQd DQd V DDQ V DD Vss Vss Vss V DD V DDQ DQa DQa M DQd DQd V DDQ V DD Vss Vss Vss V DD V DDQ DQa DQa N DQPd NC V DDQ Vss NC A Vss Vss V DDQ NC DQPaP NC NC A A TDI A 1*TDO A A A A RMODENCAATMSA 0*TCKAAAASymbol Pin NameA Address InputsA0, A1Synchronous Burst Address Inputs ADV Synchronous Burst Address AdvanceADSP Address Status Processor ADSC Address Status Controller GW Global Write Enable CLKSynchronous Clock CE , CE2, CE2Synchronous Chip SelectBW x (x=a,b,c,d)Synchronous Byte WriteControlsSymbol Pin Name BWE Byte Write Enable OE Output Enable ZZ Power Sleep Mode MODE Burst Sequence Selection TCK, TDO JTAG PinsTMS, TDI NC No ConnectDQx Data Inputs/Outputs DQPx Data Inputs/Outputs V DD 3.3V/2.5V Power SupplyV DDQIsolated Output Power Supply 3.3V /2.5V VssGround8Integrated Silicon Solution, Inc. — 1-800-379-4774Rev.D 02/11/05IS61VPS25672A, IS61LPS25672AIS61VPS51236A,IS61LPS51236A, IS61VPS102418A, IS61LPS102418AISSI®Note: * A 0 and A 1 are the two least significant bits (LSB) of the address field and set the internal burst counter if burst is desired.165 PBGA PACKAGE PIN CONFIGURATION1M X 18 (TOP VIEW)PIN DESCRIPTIONS1234567891011A NC A CE BWb NC CE2BWE ADSC ADV A A B NC A CE2NC BWa CLK GW OE ADSP A NC C NC NC V DDQ Vss Vss Vss Vss Vss V DDQ NC DQPa D NC DQb V DDQ V DD Vss Vss Vss V DD V DDQ NC DQa E NC DQb V DDQ V DD Vss Vss Vss V DD V DDQ NC DQa F NC DQb V DDQ V DD Vss Vss Vss V DD V DDQ NC DQa G NC DQb V DDQ V DD Vss Vss Vss V DD V DDQ NC DQa H NC Vss NC V DD Vss Vss Vss V DD NC NC ZZ J DQb NC V DDQ V DD Vss Vss Vss V DD V DDQ DQa NC K DQb NC V DDQ V DD Vss Vss Vss V DD V DDQ DQa NC L DQb NC V DDQ V DD Vss Vss Vss V DD V DDQ DQa NC M DQb NC V DDQ V DD Vss Vss Vss V DD V DDQ DQa NC N DQPb NC V DDQ Vss NC A Vss Vss V DDQ NC NC P NC NC A A TDI A 1*TDO A A A A RMODENCAATMSA 0*TCKAAAASymbol Pin NameA Address InputsA0, A1Synchronous Burst Address Inputs ADV Synchronous Burst Address AdvanceADSP Address Status Processor ADSC Address Status Controller GW Global Write Enable CLKSynchronous Clock CE , CE2, CE2Synchronous Chip Select BW x (x=a,b)Synchronous Byte Write ControlsSymbol Pin NameBWE Byte Write Enable OE Output Enable ZZ Power Sleep Mode MODE Burst Sequence Selection TCK, TDO JTAG PinsTMS, TDI NC No ConnectDQx Data Inputs/Outputs DQPx Data Inputs/Outputs V DD 3.3V/2.5V Power SupplyV DDQIsolated Output Power Supply 3.3V/2.5V VssGroundIntegrated Silicon Solution, Inc. — 1-800-379-47749Rev.D 02/11/05IS61VPS25672A, IS61LPS25672AIS61VPS51236A,IS61LPS51236A, IS61VPS102418A, IS61LPS102418AISSI®PIN DESCRIPTIONSA0, A1Synchronous Address Inputs. These pins must tied to the two LSBs of the address bus.A Synchronous Address Inputs ADSC Synchronous Controller Address StatusADSP Synchronous Processor Address StatusADV Synchronous Burst Address Advance BWa -BWd Synchronous Byte Write Enable BWESynchronous Byte Write EnableCE , CE2, CE2Synchronous Chip Enable CLKSynchronous ClockDQa-DQd Synchronous Data Input/Output DQPa-DQPd Parity Data Input/OutputGW Synchronous Global Write Enable MODE Burst Sequence Mode Selection OE Output EnableV DD 3.3V/2.5V Power Supply V DDQ Isolated Output Buffer Supply:3.3V/2.5V Vss Ground ZZSnooze EnablePIN CONFIGURATION100-PIN TQFP10Integrated Silicon Solution, Inc. — 1-800-379-4774Rev.D 02/11/05IS61VPS25672A, IS61LPS25672AIS61VPS51236A,IS61LPS51236A, IS61VPS102418A, IS61LPS102418AISSI®PIN CONFIGURATIONPIN DESCRIPTIONSA0, A1Synchronous Address Inputs. These pins must tied to the two LSBs of the address bus.A Synchronous Address Inputs ADSC Synchronous Controller Address Status ADSP Synchronous Processor Address Status ADV Synchronous Burst Address Advance BWa -BWb Synchronous Byte Write Enable BWE Synchronous Byte Write Enable CE , CE2, CE2Synchronous Chip EnableCLK Synchronous ClockDQa-DQb Synchronous Data Input/OutputDQPa-DQPb Parity Data I/O; DQPa is parity for DQa1-8; DQPb is parity for DQb1-8GW Synchronous Global Write Enable MODE Burst Sequence Mode Selection OE Output EnableV DD 3.3V/2.5V Power Supply V DDQ Isolated Output Buffer Supply:3.3V/2.5V Vss Ground ZZSnooze Enable100-PIN TQFPTRUTH TABLE(1-8)(3CE option)OPERATION ADDRESS CE CE2CE2ZZ ADSP ADSC ADV WRITE OE CLK DQ Deselect Cycle, Power-Down None H X X L X L X X X L-H High-Z Deselect Cycle, Power-Down None L X L L L X X X X L-H High-Z Deselect Cycle, Power-Down None L H X L L X X X X L-H High-Z Deselect Cycle, Power-Down None L X L L H L X X X L-H High-Z Deselect Cycle, Power-Down None L H X L H L X X X L-H High-Z Snooze Mode, Power-Down None X X X H X X X X X X High-Z Read Cycle, Begin Burst External L L H L L X X X L L-H Q Read Cycle, Begin Burst External L L H L L X X X H L-H High-Z Write Cycle, Begin Burst External L L H L H L X L X L-H D Read Cycle, Begin Burst External L L H L H L X H L L-H Q Read Cycle, Begin Burst External L L H L H L X H H L-H High-Z Read Cycle, Continue Burst Next X X X L H H L H L L-H Q Read Cycle, Continue Burst Next X X X L H H L H H L-H High-Z Read Cycle, Continue Burst Next H X X L X H L H L L-H Q Read Cycle, Continue Burst Next H X X L X H L H H L-H High-Z Write Cycle, Continue Burst Next X X X L H H L L X L-H D Write Cycle, Continue Burst Next H X X L X H L L X L-H D Read Cycle, Suspend Burst Current X X X L H H H H L L-H Q Read Cycle, Suspend Burst Current X X X L H H H H H L-H High-Z Read Cycle, Suspend Burst Current H X X L X H H H L L-H Q Read Cycle, Suspend Burst Current H X X L X H H H H L-H High-Z Write Cycle, Suspend Burst Current X X X L H H H L X L-H D Write Cycle, Suspend Burst Current H X X L X H H L X L-H D NOTE:1.X means “Don’t Care.” H means logic HIGH. L means logic LOW.2.For WRITE, L means one or more byte write enable signals (BWa-h) and BWE are LOW or GW is LOW. WRITE = H for allBWx, BWE, GW HIGH.3.BWa enables WRITEs to DQa’s and DQPa. BWb enables WRITEs to DQb’s and DQPb. BWc enables WRITEs to DQc’s andDQPc. BWd enables WRITEs to DQd’s and DQPd. BWe enables WRITEs to DQe’s and DQPe. BWf enables WRITEs to DQf’s and DQPf. BWg enables WRITEs to DQg’s and DQPg. BWh enables WRITEs to DQh’s and DQPh. DQPa-DQPh are avail-able on the x72 version. DQPa and DQPb are available on the x18 version.DQPa-DQPd are available on the x36 version.4.All inputs except OE and ZZ must meet setup and hold times around the rising edge (LOW to HIGH) of CLK.5.Wait states are inserted by suspending burst.6.For a WRITE operation following a READ operation, OE must be HIGH before the input data setup time and held HIGH during theinput data hold time.7.This device contains circuitry that will ensure the outputs will be in High-Z during power-up.8.ADSP LOW always initiates an internal READ at the L-H edge of CLK. A WRITE is performed by setting one or more byte writeenable signals and BWE LOW or GW LOW for the subsequent L-H edge of CLK. See WRITE timing diagram for clarification.12Integrated Silicon Solution, Inc. — 1-800-379-4774Rev.D PARTIAL TRUTH TABLEFunction GW BWE BWa BWb BWc BWd BWe BWf BWg BWh Read H H X X X X X X X X ReadH L H H H H H H H H Write Byte 1H L L H H H H H H H Write All Bytes H L L L L L L L L L Write All BytesLXXXXXXXXXTRUTH TABLE (1-8)(1CE option)NEXT CYCLE ADDRESS CE ADSP ADSC ADV WRITE OE DQ Deselected None H X L X X X High-Z Read, Begin Burst External L L X X X L Q Read, Begin Burst External L L X X X H High-Z Write, Begin Burst External L H L X L X D Read, Begin Burst External L H L X H L Q Read, Begin Burst External L H L X H H High-Z Read, Continue Burst Next X H H L H L Q Read, Continue Burst Next X H H L H H High-Z Read, Continue Burst Next H X H L H L Q Read, Continue Burst Next H X H L H H High-Z Write, Continue Burst Next X H H L L X D Write, Continue Burst Next H X H L L X D Read, Suspend Burst Current X H H H H L Q Read, Suspend Burst Current X H H H H H High-Z Read, Suspend Burst Current H X H H H L Q Read, Suspend Burst Current H X H H H H High-Z Write, Suspend Burst Current X H H H L X D Write, Suspend BurstCurrentHXHHLXDNOTE:1.X means “Don’t Care.” H means logic HIGH. L means logic LOW.2.For WRITE , L means one or more byte write enable signals (BWa-h ) and BWE are LOW or GW is LOW. WRITE = H for all BWx , BWE , GW HIGH.3.BWa enables WRITEs to DQa’s and DQPa. BWb enables WRITEs to DQb’s and DQPb. BWc enables WRITEs to DQc’s and DQPc. BWd enables WRITEs to DQd’s and DQPd. BWe enables WRITEs to DQe’s and DQPe. BWf enables WRITEs to DQf’s and DQPf. BWg enables WRITEs to DQg’s and DQPg. BWh enables WRITEs to DQh’s and DQPh. DQPa-DQPh are avail-able on the x72 version. DQPa and DQPb are available on the x18 version.DQPa-DQPd are available on the x36 version.4.All inputs except OE and ZZ must meet setup and hold times around the rising edge (LOW to HIGH) of CLK.5.Wait states are inserted by suspending burst.6.For a WRITE operation following a READ operation, OE must be HIGH before the input data setup time and held HIGH during the input data hold time.7.This device contains circuitry that will ensure the outputs will be in High-Z during power-up.8.ADSP LOW always initiates an internal READ at the L-H edge of CLK. A WRITE is performed by setting one or more byte write enable signals and BWE LOW or GW LOW for the subsequent L-H edge of CLK. See WRITE timing diagram for clarification.INTERLEAVED BURST ADDRESS TABLE (MODE = V DD or No Connect) External Address1st Burst Address2nd Burst Address3rd Burst Address A1A0A1A0A1A0A1A000011011010011101011000111100100 LINEAR BURST ADDRESS TABLE (MODE = VSS)ABSOLUTE MAXIMUM RATINGS(1)Symbol Parameter Value UnitT STG Storage Temperature–55 to +150°CP D Power Dissipation 1.6WI OUT Output Current (per I/O)100mAV IN, V OUT Voltage Relative to Vss for I/O Pins–0.5 to V DDQ + 0.5VV IN Voltage Relative to Vss for–0.5 to V DD + 0.5Vfor Address and Control InputsV DD Voltage on V DD Supply Relative to Vss–0.5 to 4.6VNotes:1.Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause perma-nent damage to the device. This is a stress rating only and functional operation of the device atthese or any other conditions above those indicated in the operational sections of thisspecification is not implied. Exposure to absolute maximum rating conditions for extendedperiods may affect reliability.2. This device contains circuity to protect the inputs against damage due to high static voltages orelectric fields; however, precautions may be taken to avoid application of any voltage higher thanmaximum rated voltages to this high-impedance circuit.3. This device contains circuitry that will ensure the output devices are in High-Z at power up.OPERATING RANGE (IS61LPSXXXXX)Range Ambient Temperature V DD V DDQCommercial0°C to +70°C 3.3V + 5% 3.3V / 2.5V + 5%Industrial–40°C to +85°C 3.3V + 5% 3.3V / 2.5V + 5%OPERATING RANGE (IS61VPSXXXXX)Range Ambient Temperature V DD V DDQCommercial0°C to +70°C 2.5V + 5% 2.5V + 5%Industrial–40°C to +85°C 2.5V + 5% 2.5V + 5%DC ELECTRICAL CHARACTERISTICS (Over Operating Range)3.3V 2.5VSymbol Parameter Test Conditions Min.Max.Min.Max.UnitV OH Output HIGH Voltage I OH = –4.0 mA (3.3V) 2.4— 2.0—VI OH = –1.0 mA (2.5V)V OL Output LOW Voltage I OL = 8.0 mA (3.3V)—0.4—0.4VI OL = 1.0 mA (2.5V)V IH Input HIGH Voltage 2.0V DD + 0.3 1.7V DD + 0.3VV IL Input LOW Voltage-0.30.8-0.30.7VI LI Input Leakage Current Vss ≤ V IN≤ V DD(1)-55-55µAI LO Output Leakage Current Vss ≤ V OUT≤ V DDQ,-55-55µAOE = V IHPOWER SUPPLY CHARACTERISTICS(1)(Over Operating Range)-250-200MAX MAXSymbol Parameter Test Conditions Temp. r ange x18x36x72x18x36x72Uni t I CC AC Operating Device Selected,Com.450450600425425550mASupply Current OE = V IH, ZZ ≤ V IL,Ind.500500650475475600All Inputs ≤ 0.2V or ≥ V DD – 0.2V,Cycle Time ≥ t KC min.I SB Standby Current Device Deselected,Com.150150150150150150mATTL Input V DD = Max.,Ind.150150150150150150All Inputs ≤ V IL or ≥ V IH,ZZ ≤ V IL, f = Max.I SBI Standby Current Device Deselected,Com.110110110110110110mACMOS Input V DD = Max.,Ind.125125125125125125V IN≤ V SS + 0.2V or ≥V DD – 0.2Vf = 0I SB2Sleep Mode ZZ>V IH Com.606060606060mAInd.757575757575Note:1.MODE pin has an internal pullup and should be tied to V DD or V SS. It exhibits ±100µA maximum leakage current when tied to ≤V SS + 0.2V or ≥ V DD – 0.2V.14Integrated Silicon Solution, Inc. — 1-800-379-4774Rev.DCAPACITANCE (1,2)Symbol Parameter Conditions Max.Unit C IN Input Capacitance V IN = 0V 6pF C OUTInput/Output CapacitanceV OUT = 0V8pFNotes:1.Tested initially and after any design or process changes that may affect these parameters.2.Test conditions: T A = 25°C, f = 1 MHz, V DD =3.3V.3.3V I/O AC TEST CONDITIONSParameterUnit Input Pulse Level0V to 3.0V Input Rise and Fall Times 1.5 ns Input and Output Timing 1.5V and Reference Level Output LoadSee Figures 1 and 2AC TEST LOADSFigure 2Figure 116Integrated Silicon Solution, Inc. — 1-800-379-4774Rev.D 2.5V I/O AC TEST CONDITIONSParameterUnit Input Pulse Level0V to 2.5V Input Rise and Fall Times 1.5 ns Input and Output Timing 1.25V and Reference Level Output LoadSee Figures 3 and 42.5 I/O OUTPUT LOAD EQUIVALENTFigure 4Figure 3READ/WRITE CYCLE SWITCHING CHARACTERISTICS (Over Operating Range)-250 -200Symbol Parameter Min.Max.Min.Max.Unit f MAX Clock Frequency—250—200MHz t KC Cycle Time 4.0—5—ns t KH Clock High Time 1.7—2—ns t KL Clock Low Time 1.7—2—ns t KQ Clock Access Time— 2.6— 3.1ns t KQX(2)Clock High to Output Invalid0.8— 1.5—ns t KQLZ(2,3)Clock High to Output Low-Z0.8—1—ns t KQHZ(2,3)Clock High to Output High-Z— 2.6— 3.0ns t OEQ Output Enable to Output Valid— 2.8— 3.1ns t OELZ(2,3)Output Enable to Output Low-Z0—0—ns t OEHZ(2,3)Output Disable to Output High-Z— 2.6— 3.0ns t AS Address Setup Time 1.2— 1.4—ns t WS Read/Write Setup Time 1.2— 1.4—ns t CES Chip Enable Setup Time 1.2— 1.4—ns t AVS Address Advance Setup Time 1.2— 1.4—ns t DS Data Setup Time 1.2— 1.4—ns t AH Address Hold Time0.3—0.4—ns t WH Write Hold Time0.3—0.4—ns t CEH Chip Enable Hold Time0.3—0.4—ns t AVH Address Advance Hold Time0.3—0.4—ns t DH Data Hold Time0.3—0.4—ns t PDS ZZ High to Power Down—2—2cyc t PUS ZZ Low to Power Down—2—2cyc Note:1. Configuration signal MODE is static and must not change during normal operation.2. Guaranteed but not 100% tested. This parameter is periodically sampled.3.Tested with load in Figure 2.READ/WRITE CYCLE TIMING18Integrated Silicon Solution, Inc. — 1-800-379-4774Rev.DWRITE CYCLE TIMINGSNOOZE MODE ELECTRICAL CHARACTERISTICSSymbol Parameter Conditions Min.Max.UnitI SB2Current during SNOOZE MODE ZZ ≥ Vih—60mAt PDS ZZ active to input ignored—2cycle t PUS ZZ inactive to input sampled2—cycle t ZZI ZZ active to SNOOZE current—2cycle t RZZI ZZ inactive to exit SNOOZE current0—nsSNOOZE MODE TIMING20Integrated Silicon Solution, Inc. — 1-800-379-4774Rev.DIntegrated Silicon Solution, Inc. — 1-800-379-477421Rev.D 02/11/05IEEE 1149.1 SERIAL BOUNDARY SCAN (JTAG)The IS61LPS/VPSxxxxxx products have a serial boundary scan Test Access Port (TAP) in the PBGA package only.(The TQFP package not available.) This port operates in accordance with IEEE Standard 1149.1-1900, but does not include all functions required for full 1149.1 compliance.These functions from the IEEE specification are excluded because they place added delay in the critical speed path of the SRAM. The TAP controller operates in a manner that does not conflict with the performance of other devices using 1149.1 fully compliant TAPs. The TAP operates using JEDEC standard 2.5V I/O logic levels.DISABLING THE JTAG FEATUREThe SRAM can operate without using the JTAG feature. To disable the TAP controller, TCK must be tied LOW (Vss) to prevent clocking of the device. TDI and TMS are internally pulled up and may be disconnected. They may alternately be connected to V DD through a pull-up resistor. TDO should be left disconnected. On power-up, the device will start in a reset state which will not interfere with the device operation.TEST ACCESS PORT (TAP) - TEST CLOCKThe test clock is only used with the TAP controller. All inputs are captured on the rising edge of TCK and outputs are driven from the falling edge of TCK.TEST MODE SELECT (TMS)The TMS input is used to send commands to the TAP controller and is sampled on the rising edge of TCK. This pin may be left disconnected if the TAP is not used. The pin is internally pulled up, resulting in a logic HIGH level.TEST DATA-IN (TDI)The TDI pin is used to serially input information to the registers and can be connected to the input of any register. The register between TDI and TDO is chosen by the instruction loaded into the TAP instruction register.For information on instruction register loading, see the TAP Controller State Diagram. TDI is internally pulled up and can be disconnected if the TAP is unused in an application. TDI is connected to the Most Significant Bit (MSB) on any register.TAP CONTROLLER BLOCK DIAGRAM22Integrated Silicon Solution, Inc. — 1-800-379-4774Rev.D 02/11/05TEST DATA OUT (TDO)The TDO output pin is used to serially clock data-out from the registers. The output is active depending on the current state of the TAP state machine (see TAP Controller State Diagram). The output changes on the falling edge of TCK and TDO is connected to the Least Significant Bit (LSB) of any register.PERFORMING A TAP RESETA Reset is performed by forcing TMS HIGH (V DD ) for five rising edges of TCK. RESET may be performed while the SRAM is operating and does not affect its operation. At power-up, the TAP is internally reset to ensure that TDO comes up in a high-Z state.TAP REGISTERSRegisters are connected between the TDI and TDO pins and allow data to be scanned into and out of the SRAM test circuitry . Only one register can be selected at a time through the instruction registers. Data is serially loaded into the TDI pin on the rising edge of TCK and output on the TDO pin on the falling edge of TCK.Instruction RegisterThree-bit instructions can be serially loaded into the instruc-tion register. This register is loaded when it is placed between the TDI and TDO pins. (See TAP Controller Block Diagram)At power-up, the instruction register is loaded with the IDCODE instruction. It is also loaded with the IDCODE instruction if the controller is placed in a reset state as previously described.When the TAP controller is in the CaptureIR state, the two least significant bits are loaded with a binary “01” pattern to allow for fault isolation of the board level serial test path.Bypass RegisterTo save time when serially shifting data through registers,it is sometimes advantageous to skip certain states. The bypass register is a single-bit register that can be placed between TDI and TDO pins. This allows data to be shifted through the SRAM with minimal delay. The bypass registeris set LOW (V SS ) when the BYPASS instruction is ex-ecuted.Boundary Scan RegisterThe boundary scan register is connected to all input and output pins on the SRAM . Several no connect (NC) pins are also included in the scan register to reserve pins for higher density devices. The x36 configuration has a 75-bit-long register and the x18 configuration also has a 75-bit-long register. The boundary scan register is loaded with the contents of the RAM Input and Output ring when the TAP controller is in the Capture-DR state and then placed between the TDI and TDO pins when the controller is moved to the Shift-DR state. The EXTEST, SAMPLE/PRELOAD and SAMPLE-Z instructions can be used to capture the contents of the Input and Output ring.The Boundary Scan Order tables show the order in which the bits are connected. Each bit corresponds to one of the bumps on the SRAM package. The MSB of the register is connected to TDI, and the LSB is connected to TDO.Identification (ID) RegisterThe ID register is loaded with a vendor-specific, 32-bit code during the Capture-DR state when the IDCODE command is loaded to the instruction register. The IDCODE is hardwired into the SRAM and can be shifted out when the TAP controller is in the Shift-DR state. The ID register has vendor code and other information described in the Identification Register Definitions table.Scan Register SizesRegister Bit Size Bit Size Bit Size Name (x18)(x36)(x72)Instruction 333Bypass 111ID323232Boundary S can7575TBDIDENTIFICATION REGISTER DEFINITIONSInstruction Field Description256K x 72512K x 361M x 18Revision N umber (31:28)Reserved for version number.xxxx xxxx xxxx Device D epth (27:23)Defines depth of SRAM. 512K, 1M or 256K 001100011101000Device W idth (22:18)Defines width of the SRAM. x72, x36 or x18001010010000011ISSI Device ID (17:12)Reserved for future use.xxxx xxxxx xxxxx ISSI J EDEC I D (11:1)Allows u nique i dentification o f S RAM v endor.00110101010001101010100011010101ID Register Presence (0)Indicate the presence of an ID register.111。

IS61LV25616AL英文数据手册

订购信息
商业级温度范围 0 +70
速度 ns
器件型号
10
IS61LV25616AL-10T
IS61LV25616AL-10K
ห้องสมุดไป่ตู้
IS61LV25616AL-10LQ
IS61LV25616AL-10B
12
IS61LV25616AL-12T
IS61LV25616AL-12K
IS61LV25616AL-12B
AC 波形
写周期 NO.1 CE 受控 OE 为高或低 (1)
注 1. WRITE 是内部产生的信号它在 CE 和 WE 输入为低以及 LB 或 UB 输入为低的重叠时间内有效 2. WRITE= ( CE ) [ ( LB ) = ( UB ) ] ( WE ) 写周期 NO.2 WE 受控写周期内 OE 为高 (1,2)
描述
ISSIIS61LV25616AL 是一个高速 4,194,304 位的静态 RAM 可组成 262,144 个字 16 位该器件由
ISSI 的高性能 CMOS 技术制造而成将这种高可靠性的处理技术与创新的电路设计技术相结合就产生了
高性能和低功耗的 IS61LV25616AL 器件
当 OE 为高电平不选时器件处于等待模式功耗随着 CMOS 输入电平一起降低
最小 10 8 8 0 0 8 8 10 6 0
2
10 最大
5
6
最小 12 8 8 0 0 8 8 12 6 0
2
12 最大
6
单位
ns ns ns ns ns ns ns ns ns ns ns ns
广州周立功单片机发展有限公司 Tel 020 38730976 38730977 Fax 38730925 http // 注 1. 测试条件信号跳变时间为 3ns 或更短 1.5V 的时间基准电平 0V 3.0V 的输入脉冲图 1 所示的输

IS61LV51216中文资料

required • Three state outputs • Data control for upper and lower bytes • Industrial and Automotive temperatures available • Lead-free available
FUNCTIONAL BLOCK DIAGRAM
Write
WE CE OE LB UB
XHXXX
H
L
H
X
X
X
L
X
H
H
H
L
L
L
H
H
L
L
H
L
H
L
L
L
L
L
L
X
L
H
L
L
X
H
L
L
L
X
L
L
ISSI ®
I/O PIN
I/O0-I/O7
I/O8-I/O15
High-Z
High-Z
High-Z High-Z
High-Z High-Z
DOUT High-Z DOUT
GND ≤ VIN ≤ VDD
ILO
Output Leakage
GND ≤ VOUT ≤ VDD Outputs Disabled
Notes: 1. VIL (min.) = –2.0V for pulse width less than 10 ns.
Com. Ind. Auto.
Com. Ind. Auto.
DESCRIPTION The ISSI IS61/64LV51216 is a high-speed, 8M-bit static

存储器入门介绍和选型(ROM SRAM DRAM Nor Nand Flash EEPROM MRAM FRAM)

易失性存储器 - DRAM
2 DRAM特点
由于每个存储位仅用一个晶体管和小电容，因此集成度比较高。就单个芯片的存储容量而言，DRAM可以远远超过 SRAM；就相同容量的芯片而言，DRAM的价格也大大低于 SRAM。这两个优点使DRAM 成为计算机内存的主要角色。 DRAM的行列地址分时复用控制和需要刷新控制，使得它比 SRAM的接口要复杂一些。另外，DRAM的存取速度一般比 SRAM要慢。
MRAM(Magnetic Random Access Memory)是一种非易失性的磁性随机存储器。它拥有静态随机存储器(SRAM) 的高速读取写入能力；以及动态随机存储器(DRAM)的高集成度，而且基本上可以无限次地重复写入。
非易失性存储器 – EEPROM
3 EEPROM选型
存储容量： 1Kb-1Mb
接口： IIC；SPI；Microwire

速率： IIC:400KHz,1MHz SPI:10MHz,20MHz Microwire:1MHz,2MHz
EEPROM
电压范围：常用(FM)1.7-5.5V;1.7-3.6V Min:1.6,1.7,1.8,2.5,2.7,3V Max:2.5,3.6,5.5,6V
1.速度较慢 2.需要刷新来保持数据 3.需要MCU带外部存储控制器
4.容量大，16Mb-4Gb 5.集成度高，单位容量价格低
6.运行功耗低
非易失性存储器 - ROM
非易失性存储器主要是用来存放固定数据、固件程序等一般不需要经常改动的数据。
早先ROM OTP EPROM EEPROM Flash
速率：800/667/533/400(Mhz) 容量：建议512M-2G
速率：2133/1866/1600/1333(Mhz) 容量：建议1G-4G

FPGA开发板

/shop_view.asp?id=50产品浏览红色飓风II代-Altera版开发板品牌：Red Cyclone现在现货订购39次，浏览9000次开发板价格：699元开发板原价：699元不打折E 币支付：不可用开发板编号：RC2-1C6【产品特色】1 支持NIOSII开发；2 提供USB2.0 数据接口，480Mbps传输速度，可以作为算法验证和高速数据采集板；3 提供接口丰富的扩展板，针对音频，视频，网络和无线等应用提供参考设计；4 面向国内外开发型用户，可独立/或用户量身定制扩展板，满足各种特定应用【产品清单】1 RCII-CY1C6开发板 1块2 ByteBlasterII并口下载电缆 1条（如果是笔记本电脑，没有并口，建议购买￥999的USB套件）3 串口连接线 1条4 USB连接线 1条5 5V, 1A电源 1个6 标准的16×2液晶模块 1个7 配套DVD光盘 1张【USB套件－￥999】除了包括以上所有配件之外，另外包括：1. USB下载电缆（原价￥200）1 FPGA芯片： EP1C6Q2405,960LEs，相当于15万门规模。

2 配置芯片：EPCS13 512K Byte 高速，异步SRAM一片256K×16Bit的ASRAM，独立的字节使能信号4 128Mb高速SDARM一片4M×32Bit SDRAM ，最高143MHz读写速度；5 4M Byte 快速FLASH一片 4M×8Bit 或者 2M×16Bit Flash读写速度为90ns；灵活的页面方式，可以用来存储FPGA配置文件或者操作系统镜像文件；4 100M网络扩展板【￥600】采用10M/100M的以太网物理层/介质访问控制（PHY/MAC）芯片，LAN91C111，兼容Altera原厂开发板网络接口和设计实例。

/shop_view.asp?id=48产品浏览SoPC专家平台RED2开发板品牌：Red Cyclone现在现货订购2次，浏览6000次开发板价格：3500元开发板原价：3500元不打折E 币支付：不可用开发板编号：RED2-2C35【RED2的产品清单】1 RED2-2C35开发板 1套2 USB 下载电缆 1条3 串口连接线 1条4 USB连接线 1条5 5V、2A电源 1个6 标准的16×2液晶模块 1个7 配套DVD光盘 1张【红色飓风RED2硬件配置】采用8层板结构，按工业标准精心设计：1 FPGA芯片： EP2C35F6722 配置芯片：EPCS163 32M高速SDARM两片采用独立的两片美光公司高质量MT48LC16M16芯片,可升级为单片32Mbyte容量MT48LC32M16芯片,最高读写速率可高达166MHz,NIOS II和高速双端口SDRAM控制器均支持4 16Mbyte nor型闪存（可升级至32Mbyte）采用Intel公司高质量E28F128J3A芯片,可升级为单片32Mbyte容量E28F256J3A芯片,8位16位可选数据总线,NIOS II和高速多端闪存控制器均支持；5 1M Byte 高速，异步SRAM一片512K×16Bit的SRAM，独立的字节使能信号12 以太网DM9000A接口DM9000A是中国台湾DAVICOM公司推出的一款高速以太网接口芯片，其基本特征是：集成10/100M 物理层接口；内部带有16K字节SRAM用作接收发送的FIFO缓存；支持8/16bit两种主机工作模式；通过HP认证的AUTO-Mdix(支持直接互连自动翻转)功能；支持TCP/IP加速(IPV4 check sum offload)减轻CPU负担，提高整机效能；10ns I/O读写时间。

ov7620中文资料

利用ARM7(LPC2210)与CMOS感光芯片(OV7620)实现了一个紧凑型圈像采集、处理系统；通过夸理利用LPC2210数据总线的工作方式，有效地消除了OV7620对系统数据总线的干扰。

SCCB控制，图像数据的采集、处理以及传输都由一片LPC22lO完成，特别适合于对功耗、体积要求较严格的嵌入式应用。

关键词 ARM7 OV7620 图像传感器 SCCB协议数据采集0V7620是一种CMOS图像传感器，它被广泛应用在网络摄像头、摄像手机等产品中。

由它组成的图像采集系统，比较常见的设计方法为OV7620搭配OV5ll+或CPLD／FPGA。

OV511+或CPLD／FPGA采集的图像数据通过USB总线或双端口RAM输出到PC或MCU(ARM、DSP等)，由PC或MCU对图像数据进行进一步的处理。

本文所设计的图像采集系统仅用一个ARM芯片就实现了OV7620的功能控制、时序同步、数据采集与处理等功能，系统结构紧凑、实用。

1 硬件结构OV7620是CMOS彩色／黑白图像传感器。

它支持连续和隔行两种扫描方式，VGA与QVGA两种图像格式；最高像素为664×492，帧速率为30fp8；数据格式包括YUV、YCrCb、RGB三种，能够满足一般图像采集系统的要求。

OV7620内部可编程功能寄存器的设置有上电模式和SCCB编程模式。

本系统采用SCCB编程模式，连续扫描，16位RGB数据输出。

系统硬件结构框图如图1所示。

ARM芯片选用具有ARM7TDMI内核的LPC2210，通过LPC2210的GPIO模拟SCCB总线协议，控制OV7620的功能寄存器。

使用LPC2210的3个中断引脚引入OV7620的图像输出同步信号VSYNC、HSYNC、PCLK，以中断方式同步图像数据输出。

OV7620的YUV通道输出的16位并行数据通过LPC2210的高16位数据线接入。

SST39VF160和IS61LV25616AL为扩展的Flash和SRAM，分别用作程序存储器和数据存储器。

BS616LV8016FI-70资料

The write enable input is active LOW and controls read and write operations. With the chip selected, when WE is HIGH and OE is LOW, output data will be present on the DQ pins; when WE is LOW, the data present on the DQ pins will be written into the selected memory location. The output enable input is active LOW. If the output enable is active while the chip is selected and the write enable is inactive, data will be present on the DQ pins and they will be enabled. The DQ pins will be in the high impedance state when OE is inactive.
(ICCSB1, Max)
Operating
(ICC, Max)
Vcc=3V Vcc=5V Vcc=3V Vcc=5V
70ns
70ns
2.4V ~ 5.5V 55 / 70
5uA 55uA 24mA 60mA
PKG TYPE BGA-48-0912
BS616LV8016FI
-40 O C to +85 O C 2.4V ~ 5.5V 55 / 70
LB X X X L H L L H L

ISL6160EVAL2;中文规格书,Datasheet资料

RL CL
VAout RLOAD
FIGURE 1. ISL6160EVAL2 BLOCK DIAGRAM
The VB Secondary Rail is enabled once the VB_ON (TP7) is signalled high (through the assertion of the local power enable), then the DC-DC En pin (TP2) is pulled high to VB. The RC network of R4, R15 and C14 allows for setting the DC-DC converter enabling signal level and ramp, thus customizing the time to DC-DC enabling. Once the DC-DC is enabled the output (TP3) ramps to 5V. The output is supplied with a banana jack for connecting to an external active or passive load. Figure 3 illustrates typical operational waveforms of the ISL6160EVAL2. These are accessible through the labeled test points (TPX) on the eval board. See Figures 4 and 5 for ISL6160EVAL2 turn-on and turn-off output voltage waveforms.
TM

IS62LV256AL-45ULI中文资料

Value
Unit
–0.5 to +4.6
V
–55 to +125
°C
–65 to +150
°Ctress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
FUNCTIONAL BLOCK DIAGRAM
DESCRIPTION The ISSI IS62/65LV256AL is a very high-speed, low
power, 32,768-word by 8-bit static RAM. It is fabricated
using ISSI's high-performance CMOS technology. This
Symbol VOH VOL VIH VIL ILI
Parameter Output HIGH Voltage Output LOW Voltage Input HIGH Voltage Input LOW Voltage(1) Input Leakage

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V
VTERM Terminal Voltage with Respect to GND –0.5 to Vcc + 0.5 V
1
TSTG Storage Temperature
–65 to +150
°C
PT
Power Dissipation
1.0
W
IOUT DC Output Current (LOW)
TRUTH TABLE
Mode
WE
CE
OE
LB
UB
Not Selected
X
H
X
X
X
Output Disabled
H
L
H
X
X
X
L
X
H
H
Read
H
L
L
L
H
H
L
L
H
L
H
L
L
L
L
Write
L
L
X
L
H
L
L
X
H
L
L
L
X
L
L
I/O PIN I/O0-I/O7 I/O8-I/O15
High-Z
High-Z High-Z
the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating
Test Conditions VCC = Min., IOH = –4.0 mA VCC = Min., IOL = 8.0 mA
GND - VIN - VCC GND - VOUT - VCC, Outputs Disabled
Note: 1. VIL (min.) = –3.0V for pulse width less than 10 ns.
DESCRIPTION The ISSI IS61LV3216L is a high-speed, 512K static RAM
organized as 32,768 words by 16 bits. It is fabricated using
ISSI's high-performance CMOS technology. This highly reli-
Rev. A
12/19/00
元器件交易网 IS61LV3216L
ISSI ®
ABSOLUTE MAXIMUM RATINGS(1)
Symbol Parameter
Value
Unit
VCC
Supply Voltage with Respect to GND
–0.5 to +4.6
VCC 15 ns, 20 ns
3.3V +10%, –5%
3.3V ± 10%
3.3V +10%, –5%
3.3V ± 10%
5
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
Symbol VOH VOL VIH VIL ILI ILO
Parameter Output HIGH Voltage Output LOW Voltage Input HIGH Voltage Input LOW Voltage(1) Input Leakage Output Leakage
(TTL Inputs)
VIN = VIH or VIL CE • VIH , f = 0
Com. — 10 Ind. — —
ISB2 CMOS Standby
VCC = Max.,
Current (CMOS Inputs) CE • VCC – 0.2V,
Com. — 1 Ind. — —
VIN • VCC – 0.2V, or
Integrated Silicon Solution, Inc. — 1-800-379-47719/00
元器件交易网 IS61LV3216L
PIN CONFIGURATIONS 44-Pin SOJ
NC 1 A14 2 A13 3 A12 4 A11 5 CE 6 I/O0 7 I/O1 8 I/O2 9 I/O3 10 Vcc 11 GND 12 I/O4 13 I/O5 14 I/O6 15 I/O7 16 WE 17 A10 18
A9 19 A8 20 A7 21 NC 22
44 A0 43 A1 42 A2 41 OE 40 UB 39 LB 38 I/O15 37 I/O14 36 I/O13 35 I/O12 34 GND 33 Vcc 32 I/O11 31 I/O10 30 I/O9 29 I/O8 28 NC 27 A3 26 A4 25 A5 24 A6 23 NC
Min. 2.4 — 2 –0.3 –1 –2
Max. — 0.4
VCC + 0.3 0.8 1 2
POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range)
Symbol Parameter
Test Conditions
-10 ns Min. Max.
VCC GND
I/O0-I/O7 Lower Byte
I/O8-I/O15 Upper Byte
I/O DATA CIRCUIT
CE
OE
CONTROL
WE
CIRCUIT
UB
LB
COLUMN I/O
ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors which may appear in this publication. © Copyright 2000, Integrated Silicon Solution, Inc.
PIN DESCRIPTIONS
A0-A14
Address Inputs
I/O0-I/O15 CE OE WE
Data Inputs/Outputs Chip Enable Input Output Enable Input Write Enable Input
LB UB NC Vcc GND
Lower-byte Control (I/O0-I/O7) Upper-byte Control (I/O8-I/O15) No Connection Power Ground
44-Pin TSOP (TYPE II)
NC 1 A14 2 A13 3 A12 4 A11 5 CE 6 I/O0 7 I/O1 8 I/O2 9 I/O3 10 Vcc 11 GND 12 I/O4 13 I/O5 14 I/O6 15 I/O7 16 WE 17 A10 18 A9 19 A8 20 A7 21 NC 22
20
mA
2
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation of
DOUT High-Z DOUT
DIN High-Z
DIN
High-Z
High-Z High-Z
High-Z DOUT DOUT
High-Z DIN DIN
Vcc Current ISB1, ISB2 ICC ICC
ICC
2
Integrated Silicon Solution, Inc. — 1-800-379-4774
元器件交易网
IS61LV3216L
32K x 16 LOW VOLTAGE CMOS STATIC RAM
ISSI ®
DECEMBER 2000
FEATURES • High-speed access time: 10, 12, 15, and 20 ns • CMOS low power operation
Easy memory expansion is provided by using Chip Enable and Output Enable inputs, CE and OE. The active LOW Write Enable (WE) controls both writing and reading of the memory.A data byte allows Upper Byte (UB) and Lower Byte (LB) access.
able process coupled with innovative circuit design techniques, yields fast access times with low power consumption.
When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down to 150 µW (typical) with CMOS input levels.