1MBI400S-120(IGBT管)

1MBI400S-120
IGBT Module
1200V / 400A 1 in one-package
Features
· High speed switching · Voltage drive
· Low inductance module structure
Applications
· Inverter for Motor drive
· AC and DC Servo drive amplifier · Uninterruptible power supply
· Industrial machines, such as Welding machines
Maximum ratings and characteristics
Thermal resistance characteristics
Thermal resistance ––0.04––0.12–0.0125 –IGBT FWD the base to cooling fin °C/W
°C/W °C/W *4 : This is the value which is defined mounting on the additional cooling fin with thermal compound
Item Symbol Characteristics Conditions Unit Min. Typ. Max.Rth(j-c)Rth(j-c)Rth(c-f)*4
Characteristics
012345
200400
600
800
1000
Collector current vs. Collector-Emiiter voltage
Tj= 25°C (typ.)
C o l l e c t o r c u r r e n t : I c [ A ]
Collector - Emitter voltage : VCE [ V ]012345
200
400
600
800
1000
Collector current vs. Collector-Emiiter voltage
Tj= 125°C (typ.)
Collector - Emitter voltage : VCE [ V ]
C o l l e c t o r c u r r e n t : I c [ A ]
012345
200
400600
800
1000
Collector current vs. Collector-Emiiter voltage
VGE=15V (typ.)
Collector - Emitter voltage : VCE [ V ]C o l l e c t o r c u r r e n t : I c [ A ]
510152025
2
4
6
8
10
Collector-Emiiter voltage vs. Gate-Emitter voltage
Tj= 25°C (typ.)
C o l l e c t o r - E m i t t e r v o l t a g e : V C E [ V ]
Gate - Emitter voltage : VGE [ V ]
05101520253035
1000
5000
10000
100000
Capacitance vs. Collector-Emiiter voltage (typ.)
VGE=0V, f= 1MHz, Tj= 25°C
C a p a c i t a n c e : C i e s , C o e s , C r e s [ p F
]
Collector - Emitter voltage : VCE [ V ]
010002000
3000
4000
2004006008001000
Dynamic Gate charge (typ.)Vcc=600V, Ic=400A, Tj= 25°C
Gate charge : Qg [ nC ]
C o l l e c t o r - E m i t t e r v o l t a g e : V C E [ V
]
05
10
15
20
25
G a t e - E m i t t e r v o l t a g e : V G E [ V ]
0100200300400500600700
50
100
500
1000
Switching time vs. Collector current (typ.)Vcc=600V, VGE=+-15V, Rg= 1.8ohm, Tj= 25°C
S w i t c h i n g t i m e : t o n , t r , t o f f , t f [ n s e c ]
Collector current : Ic [ A ]0100200300400500600700
50
100
500
1000
Switching time vs. Collector current (typ.)Vcc=600V, VGE=+-15V, Rg= 1.8ohm, Tj= 125°C
Collector current : Ic [ A ]
S w i t c h i n g t i m e : t o n , t r , t o f f , t f [ n s e c ]
0.5
110
50
50100
500
1000
5000
Switching time vs. Gate resistance (typ.)Vcc=600V, Ic=400A, VGE=+-15V, Tj= 25°C
Gate resistance : Rg [ ohm ]
S w i t c h i n g t i m e : t o n , t r , t o f f , t f [ n s e c ]
0200400
600800
20
40
60
80
100
Switching loss vs. Collector current (typ.)Vcc=600V, VGE=+-15V, Rg=1.8ohm
S w i t c h i n g l o s s : E o n , E o f f , E r r [ m J /p u l s e ]
Collector current : Ic [ A ]
0.5
1
10
50
0100
200300
Switching loss vs. Gate resistance (typ.)Vcc=600V, Ic=400A, VGE=+-15V, Tj= 125°C
S w i t c h i n g l o s s : E o n , E o f f , E r r [ m J /p u l
s e ]
Gate resistance : Rg [ ohm ]
200
400
600
800
1000
1200
1400
0100
200300400500600700
800900 Reverse bias safe operating area
+VGE=15V, -VGE<=15V, Rg>=1.8ohm, Tj<=125°C
Collector - Emitter voltage : VCE [ V ]
C o l l e c t o r c u r r e n t : I c [ A ]
Outline Drawings, mm
mass : 380g
200
400
600
800
Forward current vs. Forward on voltage (typ.)
F o r w a r d c u r r e n t : I F [ A ]
Reverse recovery characteristics (typ.)Vcc=600V, VGE=+-15V, Rg=1.8ohm
1E-30.01
0.05
0.1
0.5
T h e r m a l r e s i s t a n s e : R t h (j -c ) [ °C /W ]
Pulse width : Pw [ sec ]。