FDU6296资料

Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @TC=25°C @TA=25°C Pulsed
(Note 3) (Note 1a) (Note 1a) (Note 3) (Note 1a) (Note 1b)
(Note 2)
Test Conditions
Single Pulse, VDD = 15 V, ID=15A
Min Typ Max Units
165 15 mJ A
Drain-Source Avalanche Ratings (Note 2)
Off Characteristics
BVDSS ∆BVDSS ∆TJ IDSS IGSS VGS = 0 V, ID = 250 µA 30 29 1 ± 100 1 1.7 –0.5 7.5 9.0 9.3 58 1440 400 140 VGS = 15 mV,
90 VDS = 10V ID , D R A I N C U R R E N T (A)
IS , R E V E R S E D R A I N C U R R E N T ( A ) 1000 100 10 1
a) RθJA = 40°C/W when mounted on a 1in2 pad of 2 oz copper
b) RθJA = 96°C/W when mounted on a minimum pad.
Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% 3. Maximum current is calculated as: current limitation is 21A
VDS = VGS, ID = 250 µA ID = 250 µA, Referenced to 25°C VGS = 10 V, ID = 15 A VGS = 4.5 V, ID = 13 A VGS = 10 V, ID = 15 A, TJ=125°C VDS = 5 V, ID = 15 A VDS = 15 V, f = 1.0 MHz V GS = 0 V,
Device FDD6296 FDU2696
Package D-PAK (TO-252) I-PAK (TO-251)
Reel Size 13’’ Tube
Tape width 12mm N/A
Quantity 2500 units 75
FDD6296/FDU6296 Rev C(W)
元器件交易网
Features
• 50A, 30 V RDS(ON) = 8.8 mΩ @ VGS = 10 V RDS(ON) = 11.3 mΩ @ VGS = 4.5 V
• Low gate charge • Fast switching • High performance trench technology for extremely low RDS(ON)
o
ID = 50A VGS = 10V
ID = 25A 0.02
0.015 TA = 125 C 0.01 TA = 25 C 0.005
o o
125
150
175
2
4
6 VGS, GATE TO SOURCE VOLTAGE (V)
8
10
T J, JUNCTION TEMPERATURE ( C)
Figure 3. On-Resistance Variation with Temperature
°C
Thermal Characteristics
RθJC RθJA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient
PD R DS(ON)
where PD is maximum power dissipation at TC = 25°C and RDS(on) is at TJ(max) and VGS = 10V. Package
FDD6296/FDU6296 Rev. C(W)
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3
V mV/°C
8.8 11.3 15.0
mΩ
gFS Ciss Coss Crss RG td(on) tr td(off) tf Qg Qg Qgs Qgd IS VSD trr Qrr
S pF pF pF Ω 19 11 46 23 31.5 17 ns ns ns ns nC nC nC nC 3.2 A V nS nC
FDD6296/FDU6296
Electrical Characteristics
Symbol
EAS IAS
TA = 25°C unless otherwise noted
Parameter
Drain-Source Avalanche Energy Drain-Source Avalanche Current Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate–Body Leakage
22.5 12.2 4 3.5
Drain–Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain–Source Diode Forward Current Drain–Source Diode Forward VGS = 0 V, IS = 3.2 A Voltage Diode Reverse Recovery Time IF = 15 A, Diode Reverse Recovery Charge diF/dt = 100 A/µs
FDD6296/FDU6296
Typical Characteristics
100 VGS=10V ID , D R A I N C U R R E N T (A) 80 6.0V 60 4.5V 3.5V 4.0V
1.8 R D S ( O N ) , N O R M A L IZE D DRAIN-SOURCE ON-RESISTANCE VGS = 3.5V
(Note 2)
V mV/°C µA nA
ID = 250 µA, Referenced to 25°C VDS = 24 V, VGS =± 20 V, VGS =
VGS(th) ∆VGS(th) ∆TJ RDS(on)
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Turn–On Delay Time Turn–On Rise Time Turn–Off Delay Time Turn–Off Fall Time Total Gate Charge Total Gate Charge Gate–Source Charge Gate–Drain Charge
Dynamic Characteristics
f = 1.0 MHz ID = 1 A, RGEN = 6 Ω
1.3 11 6 29 13
Switching Characteristics
VDD = 15 V, VGS = 10 V,
VDS = 15V, ID = 15 A, VGS = 10 V VDS = 15V, ID = 15 A, VGS = 5 V
(Note 2)
0.74 25 13
1.2
FDD6296/FDU6296 Rev. C(W)
元器件交易网
FDD6296/FDU6296
Electrical Characteristics (cont’d)
Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
Ratings
30 ± 20 50 15 100 52 3.8 1.6 –55 to +175
Units
V A
PD
Power Dissipation
@TC=25°C @TA=25°C @TA=25°C
W
TJ, TSTG
Operating and Storage Junction Temperature Range
Applications
• DC/DC converter • Power management
D
D G S
I-PAK (TO-251AA) G D S
G
D-PAK TO-252 (TO-252)
S
Absolute Maximum Ratings
Symbol
VDSS VGSS ID
TA=25oC unless otherwise noted
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage
0.025 R D S ( O N ) , ON-RESISTANCE (OHM)
1.8 R D S ( O N ) , NORMALIZED D R A IN-SOURCE ON-RESISTANCE 1.6 1.4 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100
元器件交易网
FDD6296/FDU6296
June 2004
FDD6296/FDU6296
30V N-Channel Fast Switching PowerTrench® MOSFET
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
(Note 1) (Note 1a) (Note 1b)
2.9 40 96
°C/W
Package Marking and Ordering Information
Device Marking FDD6296 FDU6296
©2004 Fairchild Semiconductor Corporation
1.6 4.0V 4.5V 5.0V 6.0V 1 10V
1.4
40 3.0V
1.2
20
0 0 1 2 VDS, DRAIN-SOURCE VOLTAGE (V) 3 4
0.8 0 20 40 60 80 100 ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics