Philips Semiconductors PHE13002AU 数据手册

Philips Semiconductors Product specification
Silicon Diffused Power Transistor PHE13002AU
GENERAL DESCRIPTION
High-voltage, high-speed planar-passivated npn power switching transistor in the SOT533 envelope intended for use in high frequency electronic lighting ballast applications, converters and inverters, etc.
QUICK REFERENCE DATA
SYMBOL PARAMETER
CONDITIONS TYP.MAX.UNIT V CESM Collector-emitter voltage peak value V BE = 0 V
-600V V CBO Collector-Base voltage (open emitter)-600V V CEO Collector-emitter voltage (open base)-300V I C Collector current (DC)
- 1.5A I CM Collector current peak value -3A P tot Total power dissipation
T mb ≤ 25 ˚C
-50W V CEsat Collector-emitter saturation voltage I C = 1.0 A;I B = 0.2 A 0.27 1.0V h FE I C = 1.0 A; V CE = 5 V 1219t fi
Fall time (Inductive)
I C = 1.0 A; I B1= 0.2 A
56
76
ns
PINNING - SOT533
PIN CONFIGURATION SYMBOL
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)SYMBOL PARAMETER
CONDITIONS MIN.MAX.UNIT V CESM Collector to emitter voltage
V BE = 0 V
-600V V CEO Collector to emitter voltage (open base)-300V V CBO Collector to base voltage (open emitter)-600V I C Collector current (DC)
- 1.5A I CM Collector current peak value -3A I B Base current (DC)
-0.75A I BM Base current peak value - 1.5A P tot Total power dissipation T mb ≤ 25 ˚C
-50W T stg Storage temperature -65150˚C T j
Junction temperature
-150
˚C
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
TYP.MAX.UNIT R th j-mb Junction to mounting base - 2.5K/W R th j-a
Junction to ambient
in free air 70
-K/W
Philips Semiconductors Product specification
Silicon Diffused Power Transistor PHE13002AU
STATIC CHARACTERISTICS
T mb = 25 ˚C unless otherwise specified SYMBOL PARAMETER
CONDITIONS
MIN.TYP.MAX.UNIT I CES ,I CBO Collector cut-off current 1
V BE = 0 V; V CE = V CESMmax -0.14100µA I CES V BE = 0 V; V CE = V CESMmax ;-39500µA T j = 125 ˚C
I CEO Collector cut-off current 1V CEO = V CEOMmax (300V)- 3.7100µA I EBO
Emitter cut-off current
V EB = 9 V; I C = 0 A -20100µA V CEOsust Collector-emitter sustaining voltage I B = 0 A; I C = 10 mA;300--V L = 25 mH
V CEsat Collector-emitter saturation voltage I C = 1.0 A;I B = 0.2 A -0.27 1.0V V BEsat Base-emitter saturation voltage I C = 1.0 A;I B = 0.2 A - 1.03 1.3V
h FE DC current gain
I C = 1mA; V CE = 5 V 1723-h FE I C = 100mA; V CE = 5 V 193046h FE
I C = 1.0 A; V CE = 5 V
9
12
19
DYNAMIC CHARACTERISTICS
T mb = 25 ˚C unless otherwise specified SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
Switching times (resistive load)
I Con = 1.0 A; I Bon = -I Boff = 0.2 A;R L = 75 ohms; V BB2 = 4V;
t on Turn-on time
0.78 1.0µs t s Turn-off storage time 0.91 1.22µs t f Turn-off fall time
0.250.34µs Switching times (inductive load)I Con = 1.0 A; I Bon = 0.2 A; L B = 1 µH;-V BB = 5 V
t si Turn-off storage time 0.550.74µs t fi Turn-off fall time
5676ns Switching times (inductive load)I Con = 1.0 A; I Bon = 0.2 A; L B = 1 µH;-V BB = 5 V; T j = 100 ˚C
t si Turn-off storage time - 1.5µs t fi
Turn-off fall time
-
140
ns
Philips Semiconductors Product specification Silicon Diffused Power Transistor PHE13002AU
Philips Semiconductors Product specification
Silicon Diffused Power Transistor PHE13002AU
Fig.7. Collector-Emitter saturation voltage.
Fig.8. Base-Emitter saturation voltage.
Solid Lines = typ values, I C /I B = 3Solid Lines = typ values, I C /I B = 3
INDUCTIVE SWITCHING
Philips Semiconductors Product specification Silicon Diffused Power Transistor PHE13002AU
RESISTIVE SWITCHING
Philips Semiconductors Product specification Silicon Diffused Power Transistor PHE13002AU
Philips Semiconductors Product specification Silicon Diffused Power Transistor PHE13002AU
MECHANICAL DATA
Philips Semiconductors Product specification Silicon Diffused Power Transistor PHE13002AU
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 2000
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LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.。