XN06212资料

4
2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 5 6
0.16+0.10 –0.06
1.50+0.25 –0.05
2.8+0.2 –0.3
3
2
1
0.30+0.10 –0.05
■ Basic Part Number
• UNR2212 (UN2212) × 2
0.50+0.10 –0.05 10˚
100 IC / IB = 10
160
Total power dissipation PT (mW)
400
Collector current IC (mA)
120
IB = 1.0 mA 0.9 mA 0.8 mA
0.7 mA 0.6 mA 0.5 mA 0.4 mA
10
300
80 0.3 mA
1 25°C 0.1 −25°C Ta = 75°C
Tr1 Tr2
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Emitter-base cutoff current (Collector open) Forward current transfer ratio hFE Ratio * Collector-emitter saturation voltage Output voltage high-level Output voltage low-level Input resistance Resistance ratio Transition frequency Symbol VCBO VCEO ICBO ICEO IEBO hFE hFE(Small
Request for your special attention and precautions in using the technical information and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: • Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. • Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.
Collector-base voltage VCB (V)
Input voltage VIN (V)
VIN IO
100 VO = 0.2 V Ta = 25°C
Input voltage VIN (V)
10
1
0.1
0.01
0.1 1 10 100
Output current IO (mA)
2
SJJ00101BED
Forward current transfer ratio hFE
5
Ta = 75°C
4
Output current IO (µA)
300
103
200 25°C −25°C
3
102
2
100
10
1
0
1
10
100
1 000
0 0.1
1
10
100
1 0.4
0.60Βιβλιοθήκη 81.01.21.4
Collector current IC (mA)
200
40
0.2 mA
100
0.1 mA
0 0 40 80 120 160
0
0
2
4
6
8
10
12
0.01 0.1
1
10
100
Ambient temperature Ta (°C)
Collector-emitter voltage VCE (V)
Collector current IC (mA)
hFE IC
1.1+0.2 –0.1
(0.65)
■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO IC PT Tj Tstg Rating 50 50 100 300 150 −55 to +150 Unit V V mA mW °C °C
Publication date: July 2003 SJJ00101BED
0.4±0.2
5˚
V V V
1
XN06212
PT Ta
500
IC VCE
Ta = 25°C
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
Min 50 50
Typ
Max
Unit V V µA µA mA
0.1 0.5 0.2 60 0.50 0.99 0.25 4.9 0.2 −30% 0.8 22 1.0 150 +30% 1.2
VCE(sat) VOH VOL R1 R1 / R 2 fT
kΩ MHz
VCB = 10 V, IE = −2 mA, f = 200 MHz
Collector output capacitance C (pF) (Common base, input open circuited) ob
400 VCE = 10 V
Cob VCB
6 f = 1 MHz IE = 0 Ta = 25°C
IO VIN
104 VO = 5 V Ta = 25°C
Composite Transistors
XN06212 (XN6212)
Silicon NPN epitaxial planar transistor
Unit: mm
For switching/digital circuits ■ Features
• Two elements incorporated into one package (Transistors with built-in resistor) • Reduction of the mounting area and assembly cost by one half
/Large)
3
2
1
Conditions IC = 10 µA, IE = 0 IC = 2 mA, IB = 0 VCB = 50 V, IE = 0 VCE = 50 V, IB = 0 VEB = 6 V, IC = 0 VCE = 10 V, IC = 5 mA VCE = 10 V, IC = 5 mA IC = 10 mA, IB = 0.3 mA VCC = 5 V, VB = 0.5 V, RL = 1 kΩ VCC = 5 V, VB = 2.5 V, RL = 1 kΩ
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Ratio between 2 elements Note) The part number in the parenthesis shows conventional part number.
1: Collector (Tr1) 2: Base (Tr1) 3: Collector (Tr2) EIAJ: SC-74
0 to 0.1
Marking Symbol: 8V Internal Connection
4 5 6
1.1+0.3 –0.1
4: Base (Tr2) 5: Emitter (Tr2) 6: Emitter (Tr1) Mini6-G1 Package