NCE05N501

众
市
圳
深
电话：（０７５５）２７８５８６６７ ２７８５８６６１ 传真：（０７５５）２７８５８７０７
Page 5

TO-251 Package Information
NCE05N50I，NCE05N50K
Pb-Free Product
Symbol
A A1 B b b1 c c1 D D1 E e e1 L
6.350
6.650
0.087 0.042 0.053 0.020 0.028 0.017 0.017 0.250
0.094 0.054 0.065 0.028 0.035 0.023 0.023 0.262
5.200
5.400
0.205
0.213
5.400
5.700
0.213
0.224
2.300 TYP
ISDM
TC=25°C
4.8
A
14.4
A
Forward on voltage
VSD
Tj=25°C,ISD=4.8A,VGS=0V
1
1.3
V
Reverse Recovery Time Reverse Recovery Charge
trr
300
nS
Tj=25°C,IF=4.8A,di/dt=100A/μs
RthJA
Table 3. Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
75
司°C /W
公 Min Typ Max Unit
On/off states Drain-Source Breakdown Voltage
RDS(ON)
950
mΩ
ID
4.8
A
conversion, and industrial power applications.
Features
●New technology for high voltage device ●Low on-resistance and low conduction losses
司
公
限
Figure9. Gate charge waveforms
有 Figure10. Capacitance
技
科
安
达
众
市
圳 Figure11. Transient Thermal Impedance
深
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Page 4
Qrr
2.6
uC
Notes: 1.Repetitive Rating: Pulse width limited by maximum junction temperature
2. Tj=25℃,VDD=50V,VG=10V, RG=25Ω
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Parameter Avalanche current(Note 1)
Repetitive Avalanche energy ，tAR limited by Tjmax
(Note 1)
Symbol IAR
EAR
Value
4.8
0.4
Unit
A
mJ
Operating Junction and Storage Temperature Range
深 Drain-Source Voltage (VGS=0V）
Gate-Source Voltage (VDS=0V)
Symbol VDS VGS
Value
500 ±30
Unit
V V
Continuous Drain Current at Tc=25°C
Continuous Drain Current at Tc=100°C Pulsed drain current (Note 1)
NCE05N50I，NCE05N50K
Pb-Free Product
NCE N-Channel Enhancement Mode Power MOSFET
General Description
The series of devices use advanced super junction
VDS @Tjmax
RDS(ON)
科VGS=10V, ID=3A
850 950 mΩ
Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Switching times Turn-on Delay Time
Max.
0.087
0.094
0.000
0.005
市1.350
0.500
1.650 0.700
0.053 0.020
0.065 0.028
圳0.700
0.430
0.900 0.580
0.028 0.017
0.035 0.023
深 0.430 6.350
0.580 6.650
0.017 0.250
0.023 0.262
TJ,TSTG
-55...+150
°C
Table 2. Thermal Characteristic
Parameter
Symbol
Value
Unit
Thermal Resistance，Junction-to-Case（Maximum）
RthJC
2.5
°C /W
Thermal Resistance，Junction-to-Ambient （Maximum）
Pb-Free Product
Symbol
A A1 B b b1 C C1 D D1 E e e1 L L1 L2 L3 V
司
公
限
有
技
科
安 Dimensions In Millimeters
达 Min.
Max.
2.200 0.000
众
2.400 0.127
Dimensions In Inches
Min.

Test circuit
1）Gate charge test circuit & Waveform
NCE05N50I，NCE05N50K
Pb-Free Product
司
2）Switch Time Test Circuit：
公 限
有
技
科
安
达 3）Unclamped Inductive Switching Test Circuit & Waveforms
ID (DC)
4.8
A
ID (DC)
3
A
IDM (pluse)
14.4
A
Drain Source voltage slope, VDS = 400 V, ID = 4.8 A, Tj = 125 °C
dv/dt
50
V/ns
Maximum Power Dissipation(Tc=25℃)
Derate above 25°C
Single pulse avalanche energy (Note2)
PD
50
W
0.4
W/°C
EAS
130
mJ
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Page 1

NCE05N50I，NCE05N50K
Pb-Free Product
圳
深
电话：（０７５５）２７８５８６６７ ２７８５８６６１ 传真：（０７５５）２７８５８７０７
Page 3

Figure7. BVDSS vs Junction Temperature
NCE05N50I，NCE05N50K
Pb-Free Product
Figure8. Maximum ID vs Junction Temperature
560
V
technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power
司
●small package ●Ultra Low Gate Charge cause lower driving requirements
公
●100% Avalanche Tested
限
Application
● Power factor correction（PFC）
有
● Switched mode power supplies(SMPS) ● Uninterruptible Power Supply（UPS）
BVDSS
VGS=0V ID=250μA
限500
V
Zero Gate Voltage Drain Current(Tc=25℃)
IDSS
Zero Gate Voltage Drain Current(Tc=125℃)
IDSS
VDS=500V,VGS=0V VDS=500V,VGS=0V
有
1
μA
50
μA
gFS Clss
安VDS = 20V, ID = 3A
VDS=100V,VGS=0V, Coss
F=1.0MHz
达 Crss
Qg
众 VDS=400V,ID=4.8A,
市Qgs Qgd
VGS=10V
圳 td(on)
5
S
480
PF
25
PF
2
PF
13
25
nC
2.2
nC
5
nC
6
nS
Turn-on Rise Time Turn-Off Delay Time
Gate-Body Leakage Current Gate Threshold Voltage
IGSS VGS(th)
技 VGS=±30V,VDS=0V
VDS=VGS,ID=250μA
2.5
3
±100 3.5
nA V
Drain-Source On-State Resistance Dynamic Characteristics
5.200
5.400
0.205
0.213
5.400
5.700
0.213
0.224
2.300 TYP
0.091 TYP
4.500
4.700
司
公
Figure3. Output characteristics
限 Figure4. Transfer characteristics
有
技
科
安
达
众
市 Figure5. Static drain-source on resistance
Figure6. RDS(ON) vs Junction Temperature
技Schematic diagram
科
Package Marking And Ordering Information
安
Device NCE05N50I NCE05N50K
Device Package TO-251 TO-252
达Marking 众NCE05N50
市
TO-251
TO-252
圳 Table 1. Absolute Maximum Ratings (TC=25℃) Parameter
0.091 TYP
4.500
4.700
0.177
0.185
7.500
7.900
0.295
0.311
电话：（０７５５）２７８５８６６７ ２７８５８６６１ 传真：（０７５５）２７８５８７０７
Page 6

TO-252 Package Information
NCE05N50I，NCE05N50K
深Байду номын сангаас
tr td(off)
VDD=380V,ID=4.8A, RG=18Ω,VGS=10V
2.5
nS
55
80
nS
Turn-Off Fall Time
tf
9
14
nS
Source- Drain Diode Characteristics
Source-drain current(Body Diode)
ISD
Pulsed Source-drain current(Body Diode)
Page 2

NCE05N50I，NCE05N50K
Pb-Free Product
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS (curves)
Figure1. Safe operating area
Figure2. Source-Drain Diode Forward Voltage
司
公
限
有
技
科
安
达 Dimensions In Millimeters
Min.
Max.
Dimensions In Inches
Min.
Max.
2.200 1.050
众 2.400 1.350
市 1.350
0.500
1.650 0.700
圳0.700
0.900
深0.430 0.430
0.580 0.580