VAPOR SOURCE FOR CHEMICAL VAPOR DEPOSITION
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专利内容由知识产权出版社提供ICAL VAPOR DEP OSIT ION
发明人：GORDON, Roy, G. 申请号：US19980254 61 申请日：19981201 公开号：WO99/028532P1 公开日：19990610
摘要：An apparatus is used to turn liquids (10) into vapors for use in chemical vapor deposition. It uses a high-frequency ultrasonic plate (20) to break the liquid into tiny droplets (120, 135) and a gas-dynamic sorting tower (140) to reprocess larger droplets into smaller ones before quickly vaporizing them. The method can vaporize liquids with high efficiency even if they have low vapor pressures and limited thermal stability. The vapor concentration can be set to a known and reproducible value by setting the pumping rate. The apparatus can rapidly start and stop the vapor flow. The pressure drop in the carrier gas (160) is very small. Only a very small dead volume of liquid is contained in the apparatus at any given time, so little is wasted when the system is cleaned.
申请人：PRESIDENT AND FELLOWS OF HARVARD COLLEGE 地址：US 国籍：US 代理机构：SCOZZAFAVA, Mary, Rose 更多信息请下载全文后查看
发明人：GORDON, Roy, G. 申请号：US19980254 61 申请日：19981201 公开号：WO99/028532P1 公开日：19990610
摘要：An apparatus is used to turn liquids (10) into vapors for use in chemical vapor deposition. It uses a high-frequency ultrasonic plate (20) to break the liquid into tiny droplets (120, 135) and a gas-dynamic sorting tower (140) to reprocess larger droplets into smaller ones before quickly vaporizing them. The method can vaporize liquids with high efficiency even if they have low vapor pressures and limited thermal stability. The vapor concentration can be set to a known and reproducible value by setting the pumping rate. The apparatus can rapidly start and stop the vapor flow. The pressure drop in the carrier gas (160) is very small. Only a very small dead volume of liquid is contained in the apparatus at any given time, so little is wasted when the system is cleaned.
申请人：PRESIDENT AND FELLOWS OF HARVARD COLLEGE 地址：US 国籍：US 代理机构：SCOZZAFAVA, Mary, Rose 更多信息请下载全文后查看