DM2328 SOT-23(MOS场效应管原厂推荐)

BVDSS
100
—
—
Gate Threshold Voltage 栅極開启電壓(ID = 250uA,VGS= VDS)
VGS(th)
1
—
3
Diode Forward Voltage Drop 内附二極管正向壓降(IS= 1A,VGS=0V)
VSD
—
—
1.2
Zero Gate Voltage Drain Current 零栅壓漏極電流(VGS=0V, VDS= 100V)
Symbol 符號
Drain-Source Voltage 漏極-源極電壓
BVDSS
Gate- Source Voltage 栅極-源極電壓
VGS
Drain Current (continuous) 漏極電流-連續
ID
Drain Current (pulsed) 漏極電流-脉冲
IDM
Total Device Dissipation
IDSS
—
—
1
Gate Body Leakage 栅極漏電流(VGS=+20V, VDS=0V)
IGSS
—
—
+100
Static Drain-Source On-State Resistance 静态漏源導通電阻(ID= 1.5A,VGS=10V)
RDS(ON)
—
230
270
Static Drain-Source On-State Resistance 静态漏源導通電阻(ID= 1A,VGS=4.5V)
Figure 5: Gate-Charge Characteristics
Figure 6: Body Diode Characteristics
DM2328
■TYPICAL CHARACTERISTIC CURVE 典型特性曲线
Figure 1: Output Characteristics
Figure 2: Threshold Voltage
Figure 3: Capacitance
Figure 4: On-Resistance vs. Gate-Source Voltage
CISS
—
326
—
COSS
—
38
—
t(on)
—
ห้องสมุดไป่ตู้10
—
Turn-OFF Time 关断時間 (VDS= 50V, VGS= 10V, RGEN=6Ω)
t(off)
—
30
—
Unit 單位
V V V uA nA
mΩ
mΩ
pF pF ns ns
Pulse Width<300μs; Duty Cycle<2.0%
總耗散功率
PD
TA=25℃環境溫度爲 25℃
Junction 結溫
TJ
Storage Temperature 儲存溫度
Tstg
■DEVICE MARKING 打標 DM2328=I28
Max 最大值
100 +20 1.5 6
1250
150 -55to+150
Unit 單位
V V A A
mW
℃ ℃
DM2328
DM2328 SOT-23 場效應晶體管(SOT-23 Field Effect Transistors)
WWW.DCY-CHINA.NET
N-Channel Enhancement-Mode MOS FETs
N 沟道增强型 MOS 场效应管
■MAXIMUM RATINGS 最大額定值
Characteristic 特性參數
RDS(ON)
—
275
340
Input Capacitance 輸入電容 (VGS=10V, VDS= 15V,f=1MHz)
Output Capacitance 輸出電容 (VGS=10V, VDS= 15V,f=1MHz)
Turn-ON Time 开启時間 (VDS= 50V, VGS= 10V, RGEN=6Ω)
■ELECTRICAL CHARACTERISTICS 電特性
(TA=25℃ unless otherwise noted 如無特殊說明，溫度爲 25℃)
Characteristic 特性參數
Symbol Min 符號 最小值
Typ 典型值
Max 最大值
Drain-Source Breakdown Voltage 漏極-源極擊穿電壓(ID =250uA,VGS=0V)