玩具MOS管资料

0.6
TC = 25 °C
10
0.4
5
VGS = 3 V
0.2
TC = 125 °C TC = - 55 °C
0 0 0.5 1 1.5 2 VDS - Drain-to-Source Voltage (V)
0 0 0.6 1.2 1.8 2.4 3 VGS - Gate-to-Source Voltage (V)
10.0
TJ = 150 °C
RDS(on) - On-Resistance (Ω)
0.075 TJ = 125 °C 0.05 TJ = 25 °C 0.025
1.0 TJ = 25 °C
0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD - Source-to-Drain Voltage (V)
• TrenchFET® Power MOSFET • 100 % Rg Tested
APPLICATIONS
• • • • Load Switch Notebook Adaptor Switch DC/DC Converter Power Management
(SOT-23)
G
1 3 D
S
2
Top View
10
ID - Drain Current (A)
100 μs 1 1 ms 10 ms 0.1 BVDSS Limited 100 ms 10 s, 1 s TA = 25 °C 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified DC
VGS(th) (V)
1.64
1.28
1.1 - 50 - 25 0 25 50 75 100 125 150 TJ - Temperature (°C)
0.01
0.1 Time (s)
1
10
100
Threshold Voltage
Single Pulse Power
100
Limited by RDS(on)*
2
DTS3407
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
20 VGS = 10 V thru 5 V VGS = 4.5 V
0.8 1
ID - Drain Current (A)
15
VGS = 4 V
ID - Drain Current (A)
DTS3407
P-Channel 30 V (D-S) MOSFET
FEATURES MOSFET PRODUCT SUMMARY
VDS (V) RDS(on) () Max. 0.046 at VGS = - 10 V - 30 0.051 at VGS = - 6 V 0.054 at VGS = - 4.5 V ID (A)a - 5.6 - 4.4 - 3.9 6.9 nC Qg (Typ.)
VGS = 4.5V, 3A 1.1
4
VDS = 24 V
0.9
2
0 0 3 6 9 12 15
0.7 - 50 - 25 0 25 50 75 100 125 150
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (°C)
Gate Charge
°C
THERMAL RESISTANCE RATINGS
Parameter 5 s Maximum Junction-to-Ambientb, d Steady State Maximum Junction-to-Foot (Drain) Notes: a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 175 °C/W. Symbol RthJA RthJF Typical 100 60 Maximum 130 75 Unit °C/W
Pulsed Drain Current (t = 300 µs) Continuous Source-Drain Diode Current
Maximum Power Dissipation
PD TJ, Tstg
W
Operating Junction and Storage Temperature Range
Min. - 30
Typ.
Max.
Unit V
- 25 3.9 -1 - 2.5 ± 100 -1 - 10 - 20 0.043 0.048 0.051 10 0.046 0.051 0.054
mV/°C V nA µA A S
Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Current Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time
705 93 73 14.5 6.9 2.3 2.1 8.3 6 6 19 9 10 9 18 7 17 12 12 29 18 20 18 27 14 - 1.4 - 20 - 0.8 13 5 7 6 - 1.2 20 10 ns ns 22 10.4 nC pF
A V ns nC ns
Notes: a. Pulse test; pulse width 300 µs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing.
1
DTS3407
MOSFET SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea
0 2 4 6 8 10
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
2
30
1.82
20Hale Waihona Puke Baidu
ID = 250 μA 1.46
Power (W) 10 0 0.001
On-Resistance vs. Junction Temperature
3
DTS3407
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100.0
0.125 ID = 3.8 A 0.1 IS - Source Current (A)
b
Symbol VDS VDS/TJ VGS(th)/TJ VGS(th) IGSS IDSS ID(on) RDS(on) gfs
Test Conditions VGS = 0 V, ID = - 250 µA ID = - 250 µA VDS = VGS, ID = - 250 µA VDS = 0 V, VGS = ± 20 V VDS = - 30 V, VGS = 0 V VDS = - 30 V, VGS = 0 V, TJ = 55 °C VDS - 5 V, VGS = - 10 V VGS = - 10 V, ID = - 3.8 A VGS = - 6 V, ID = - 3.3 A VGS = - 4.5 V, ID = - 3 A VDS = - 5 V, ID = - 3.8 A
a
Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf td(on) tr td(off) tf IS ISM VSD trr Qrr ta tb IF = - 3 A, dI/dt = 100 A/µs, TJ = 25 °C IS = - 3 A TC = 25 °C VDD = - 15 V, RL = 5 ID = - 3 A, VGEN = - 6 V, RG = 1 VDD = - 15 V, RL = 5 ID = - 3 A, VGEN = - 10 V, RG = 1 f = 1 MHz 1.7 VDS = - 15 V, VGS = - 10 V, ID = - 5 A VDS = - 15 V, VGS = - 4.5 V, ID = - 5 A VDS = - 15 V, VGS = 0 V, f = 1 MHz
Safe Operating Area
380
190 Coss Crss
0.00 0 5 10 ID - Drain Current (A) 15 20
0 0 6 12 18 24 30 VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Output Characteristics
Transfer Characteristics
0.10
950
RDS(on) - On-Resistance (Ω)
0.08 C - Capacitance (pF)
760
Ciss
0.06
VGS = 4.5 V VGS = 6 V
570
0.04 VGS = 10 V 0.02
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID IDM IS Limit - 30 ± 20 - 5.6 -4 - 3.8b,c - 3b,c - 20 - 1.4 - 0.63b,c 1.7 1.1 1.20b, c 0.6b, c - 55 to 150 A Unit V
10
ID = 3.8 A VGS - Gate-to-Source Voltage (V) 1.5
Capacitance
VGS = 10 V, 3.8 A; 6 V, 3.3 A VDS = 8 V RDS(on) - On-Resistance (Normalized) 1.3
8
6
VDS = 15 V