21SM1-T;中文规格书,Datasheet资料
UMF21NTR;中文规格书,Datasheet资料
Transistors1/4Power management (dual transistors)EMF21 / UMF21N2SA2018 and DTC114E are housed independently in a EMT6 or UMT6 package.z ApplicationPower management circuitz Features1) Power switching circuit in a single package.2) Mounting cost and area can be cut in half.z StructureSilicon epitaxial planar transistorz Equivalent circuitsz External dimensions (Units : mm)z Package, marking, and packaging specificationsType UMF21N UMT6F21TR 3000Package Marking CodeBasic ordering unit(pieces)EMF21EMT6F21T2R 8000Transistors2/4z Absolute maximum ratings (T a=25°C)Tr1Parameter∗1 Single pulse P W =1ms∗2 120mW per element must not be exceeded.Each terminal mounted on a recommended land.Symbol V CBO V CEO V EBO I C I CP P C Tj Tstg Limits −15−12−6−500150(TOTAL)150−55~+150−1.0∗1∗2Unit V V V mA A mW °C °CCollector-base voltage Collector-emitter voltage Emitter-base voltageCollector currentPower dissipationJunction temperatureRange of storage temperatureDTr2Parameter∗1 Characteristics of built-in transistor.∗2 Each terminal mounted on a recommended land.SymbolV CCV INI CI OP CTj Tstg Limits 50−10~+4010050150(TOTAL)150−55~+150∗1∗2UnitV V mA mA mW °C °CSupply voltage Input voltage Collector current Output current Power dissipation Junction temperatureRange of storage temperaturez Electrical characteristics (T a=25°C)Tr1ParameterSymbol Min.Typ.Max.Unit ConditionsV CB =−10V, I E =0mA, f =1MHzTransition frequencyf T −260−MHz V CE =−2V, I E =10mA, f =100MHz BV CEO −12−−V I C =−1mA Collector-emitter breakdown voltage BV CBO −15−−V I C =−10µA Collector-base breakdown voltage BV EBO −6−−V I E =−10µA Emitter-base breakdown voltage I CBO −−−100nA V CB =−15V Collector cut-off current I EBO −−−100nA V EB =−6VEmitter cut-off currentV CE(sat)−−100−250mV I C =−200mA, I B =−10mA Collector-emitter saturation voltage h FE 270−680−V CE =−2V, I C =−10mADC current gainCob−6.5−pFCollector output capacitanceDTr2ParameterSymbol V I(off)V I(on)V O(on)I I I O(off)R 1G I R 2/R 1f TMin.−3−−−7300.8−−−0.1−−10−12500.5−0.30.880.513−1.2−V V CC =5V, I O =100µA V O =0.3V, I O =10mA I O /I I =10mA/0.5mA V I =5VV CC =50V, V I =0V V O =5V, I O =5mAV CE =10V, I E =−5mA, f =100MHz∗V mA µA k Ω−−−−MHzTyp.Max.Unit ConditionsInput voltage Output voltage Input current Output current Input resistance DC current gain Resistance ratio Transition frequency∗ Transition frequency of the deviceTransistors3/4z Electrical characteristic curves Tr1BASE TO EMITTER VOLTAGE : V BE (V)Fig.1 Grounded emitter propagationcharacteristics C O L L E C T O R C U R R E N T : I C (m A )COLLECTOR CURRENT : I C (mA)Fig.2 DC current gain vs.collector currentD C C U R RE N T G A I N : hF ECOLLECTOR CURRENT : I C (mA)Fig.3 Collector-emitter saturation voltagevs. collector current ( Ι )C O L L E C T O R S A T U R A T I O N V O L T A G E : V C E (s a t ) (m V )COLLECTOR CURRENT : I C (mA)Fig.4 Collector-emitter saturation voltage vs. collector current ( ΙΙ )C O L L E C T O R S A T U R A T I O N V O L T A G E : V C E (s a t ) (V )COLLECTOR CURRENT : I C (mA)Fig.5 Base-emitter saturation voltage vs. collector currentB A S E R S A T U R A T I O N V O L T A G E : V B E (s a t ) (m V )EMITTER CURRENT : I E (mA)Fig.6 Gain bandwidth productvs. emitter current1T R A N S I T I O N F R E Q U E N C Y : f T (M H z )101000100C O L L E C T O R O U T P U T C A P A C I T A N C E : C o b (p F )E M I T T E R I N P U T C A P A C I T A N C E : C i b (pF )COLLECTOR TO BASE VOLTAGE : V CB (V)Fig.7 Collector output capacitancevs. collector-base voltage Emitter input capacitance vs. emitter-base voltageTransistors4/4DTr2I N P U T V O L T A G E : V I (o n ) (V )OUTPUT CURRENT : I O (A)Fig.1 Input voltage vs. output current(ON characteristics)INPUT VOLTAGE : V I(off) (V)O U T P U T C U R R E N T : I o (A )120050010020501025Fig.2 Output current vs. input voltage(OFF characteristics)OUTPUT CURRENT : I O (A)D C C U RR E N T G A I N : G IFig.3 DC current gain vs. outputcurrentOUTPUT CURRENT : I O (A)O U T P U T V O L T A G E: V O (o n ) (V )Fig.4 Output voltage vs. outputcurrentAppendixAbout Export Control Order in JapanProducts described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade ControlOrder in Japan.In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.Appendix1-Rev1.0分销商库存信息: ROHMUMF21NTR。
BAS21HT1G;BAS21HT1;中文规格书,Datasheet资料
BAS21HT1,NSVBAS21HT1G,NSVBAS21HT3GHigh VoltageSwitching DiodeFeatures•NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable•These are Pb−Free DevicesMAXIMUM RATINGSSymbol Rating Value Unit V R Continuous Reverse Voltage250Vdc V RRM Repetitive Peak Reverse Voltage250VdcI F Peak Forward Current200mAdc I FM(surge)Peak Forward Surge Current625mAdcI FRM Repetitive Peak Forward Current500mAI FSM Non−Repetitive Peak Forward Current(Square Wave, T J = 25°C prior tosurge)t = 1 m st = 1 mst = 1 s 5.02.00.5ATHERMAL CHARACTERISTICS Symbol CharacteristicMax UnitPD Total Device Dissipation FR−5 Board,(Note 1)T A = 25°CDerate above 25°C 2001.57mWmW/°CR q JA Thermal Resistance,Junction−to−Ambient635°C/WT J, T stg Junction and Storage TemperatureRange−55 to +150°CStresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.1.FR−5 Minimum PadHIGH VOLTAGESWITCHING DIODEDevice Package Shipping†ORDERING INFORMATIONSOD−323CASE 477STYLE 112MARKINGDIAGRAM†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our T ape and Reel Packaging Specifications Brochure, BRD8011/D.BAS21HT1G SOD−323(Pb−Free)3000 / Tape & Reel JS= Device CodeM= Date Code*G= Pb−Free Package(Note: Microdot may be in either location)*Date Code orientation may vary dependingupon manufacturing location.NSVBAS21HT1G SOD−323(Pb−Free)3000 / Tape & ReelNSVBAS21HT3G SOD−323(Pb−Free)10000 / Tape &ReelELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)CharacteristicSymbolMinMaxUnitOFF CHARACTERISTICS Reverse Voltage Leakage Current (V R = 200 Vdc)(V R = 200 Vdc, T J = 150°C)I R−−0.1100m AdcReverse Breakdown Voltage (I BR = 100 m Adc)V (BR)250−Vdc Forward Voltage (I F = 100 mAdc)(I F = 200 mAdc)V F−−10001250mVDiode Capacitance (V R = 0, f = 1.0 MHz)C D − 5.0pF Reverse Recovery Time(I F= I R = 30 mAdc, R L = 100 W )t rr−50nsNotes: 1. A 2.0 k W variable resistor adjusted for a Forward Current (I F ) of 30 mA.2. Input pulse is adjusted so I R(peak) is equal to 30 mA.3. t p » trrV Rt rt10%90%I I OUTPUT PULSE(I F = I R = 30 mA; MEASUREDat i R(REC) = 3.0 mA)INPUT SIGNAL Figure 1. Recovery Time Equivalent Test CircuitFigure 2. Forward VoltageFigure 3. Reverse LeakageFORWARD CURRENT (mA)7000R E V E R S E C U R R E N T (n A )REVERSE VOLTAGE (V)50003000506000400061234120040060080010001200F O R W A R D V O L T A G E (m V )Figure 4. Diode CapacitanceV R , REVERSE VOLTAGE (V)6543210.30.40.50.60.70.80.91.0C d , D I O D E C A P A C I T A N C E (p F )87PACKAGE DIMENSIONSSOD −323CASE 477−02ISSUE GH E NOTES:1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.2.CONTROLLING DIMENSION: MILLIMETERS.3.LEAD THICKNESS SPECIFIED PER L/F DRAWING WITH SOLDER PLATING.4.DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS.5.DIMENSION L IS MEASURED FROM END OF RADIUS.NOTE 3STYLE 1:PIN 1.CATHODE2.ANODEDIM MIN NOM MAX MILLIMETERSA 0.800.90 1.00A10.000.050.10A30.15 REF b 0.250.320.4C 0.0890.120.177D 1.60 1.70 1.80E 1.15 1.25 1.350.082.30 2.50 2.70L 0.0310.0350.0400.0000.0020.0040.006 REF0.0100.0120.0160.0030.0050.0070.0620.0660.0700.0450.0490.0530.0030.0900.0980.105MIN NOM MAX INCHES*For additional information on our Pb −Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.SOLDERING FOOTPRINT*ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at /site/pdf/Patent −Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly,any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.PUBLICATION ORDERING INFORMATION分销商库存信息:ONSEMIBAS21HT1G BAS21HT1。
SSL2103T1,518;中文规格书,Datasheet资料
/
NXP Semiconductors
SSL2103
Dimmable Greenchip controller for LED lighting
4. Quick reference data
Table 1. Symbol VCC fosc IDRAIN min max Tamb
7. Pinning information
7.1 Pinning
SB_DRV WB_DRV VCC GND BRIGHTNESS RC2 RC
1 2 3 4 5 6 7
001aam652
14 HVDET 13 DRAIN 12 PWR_DRV
SSL2103
11 SOURCE 10 AUX 9 8 ISENSE PWMLIMIT
SSL2103
Dimmable Greenchip controller for LED lighting
Rev. 2.2 — 5 December 2011 Product data sheet
1. General description
The SSL2103 is a Switched Mode Power Supply (SMPS) controller IC that operates in combination with a phase cut dimmer directly from the rectified mains. It is designed to drive LED devices. The device includes a circuit to allow direct start-up from the rectified mains voltage. For dimmer applications, an integrated dedicated circuitry optimizes the dimming curve.
TM-21 Datasheet
TRADEMARK:BULKSAM®GRADE:TM-21CHRACTERISTIC:InjectionGeneralTEST METHODCONDITIONUNIT 23 deg.C -30 deg.C Tensile Strength 23 deg.CMPa Tensile Modulus 23 deg.CMPa Flexural Strength MPa Flexural Modulus MPa Rockwell Hardness ISO 203923 deg.C R-scale T.D.U.L.ISO 75 1.83MPa Flatwise deg.C DensityISO 118323 deg.C g/cm 3Melt Volume Flow RateISO 1133220deg.C cm 3/10minMold Shrinkage note)ISO 294-423 deg.C%Coefficient of Linear Thermal Expansion ISO 11359-2-cm/cm/deg.C(x10-5)-mm-mm -mmAlso pay full attention to legal restrictions and industrial properties.Also, UMG ABS, Ltd. is unable to guarantee the quality and safety of your products manufactured by using our products or any information proposed by our company.Your company by itself has to judge the suitability of the materials to your products.2002-04Charpy Impact Strength,(Notched)UL Flame Rating File No. E47016ISO 179ISO 527ISO 178UL 94kJ/m2TM-212200108946521004491.5 HB --TECHNOLOGY DEPARTMENTPRODUCT DATA SHEET9201.0640.4-0.623 deg.C 2mm/min note)Mold shrinkage valus are determined along the parrarel of flow direction and will depend on the molding conditions,such as holding pressure etc,so please ask our technical service in advance for applying to the mold design.Also, these values are subject to change as a result of improvement in the physical properties.Be sure to read in advance Material Safety Data Sheet (MSDS) to safely handle our products. You can obtain and use the MSDS from our SALES DEPARTMENTInformation described on these sheets was obtained based on specific conditions and thus UMG ABS, Ltd. will not guarantee that you can always obtain the same results as described here from the use of our product.Numeric values shown in the tables are the Typical values of natural colors obtained based on predetermined testing methods and thus are not guaranteed values. Also, the numeric values for colored products may slightly vary depending upon the kind and qua。
SC08-21EWA, 规格书,Datasheet 资料
SPEC NO: DSAB4281 APPROVED: WYNEC
REV NO: V.12 CHECKED: Joe Lee
DATE: JAN/27/2011 DRAWN: Y.H.Wu
PAGE: 2 OF 7 ERP: 1301000773
芯天下--/
High Efficiency Red
芯天下--/
SPEC NO: DSAB4281 APPROVED: WYNEC
REV NO: V.12 CHECKED: Joe Lee
DATE: JAN/27/2011 DRAWN: Y.H.Wu
PAGE: 5 OF 7 ERP: 1301000773
芯天下--/
Description
The High Efficiency Red source color devices are made with Gallium Arsenide Phosphide on Gallium Phosphide Orange Light Emitting Diode.
Package Dimensions& Internal Circuit Diagram
Part No. Dice Lens Type Iv (ucd) [1] @ 10mA Min. SC08-21EWA High Efficiency Red (GaAsP/GaP) White Diffused 3600 Typ. 8000 Common Cathode, Rt. Hand Decimal Description
SPEC NO: DSAB4281 APPROVED: WYNEC
REV NO: V.12 CHECKED: Joe Lee
DATE: JAN/27/2011 DRAWN: Y.H.Wu
BLM21PG221SN1磁珠规格书
For Standard BLMppA/T
For High Speed For Digital
Signal
Interface
BLMppB BLMppR
10 (1A)
1005 0402
22 (6A)
1608
2012
3216
0603
0805
1206
For Large Current BLMppP
( )=Rated Current
Chip Ferrite Bead for Automotive Part Numbering
(Part Number)
BL M 18 AG 102 S Z 1 D q w e r t y u io
qProduct ID Product ID BL
Chip Ferrite Beads
wType Code E M
Impedance (Ω)
at 100MHz
at 1GHz
10 (Typ.)
-
70 (Typ.)
-
120±25%
-
240±25%
-
10 (Typ.)
-
70 (Typ.)
-
120±25%
-
220±25%
-
600±25%
-
1000±25%
-
600±25%
140 (Typ.)
1000±25%
300 (Typ.)
47 47
1800
1000 (1.5A) 1000
600 (1.5A)
600
470 (2A)
1000
600 470
390 (2A)
390
330 (1.5A)
CJ1W-PNT21;中文规格书,Datasheet资料
S7-312 to S7-315
Key Selling Features • Tiny Size allows for smaller cabinets, less power consumed • All CPUs capable of performing position & motion control • 2 axis position control <$1K for CPU, PS, MD21x (Pulse I/O) • Fastest in Class 40ns Basic Instruction Speed allow for higher production possible • One Software for PLC, HMI,Network... (no yearly maintenance fees) • Fast Setup built-in USB autoload drivers allow programming within 1 minute • Legacy PLC support allows easy conversion to new hardware saving time & money • Dedicated 1MB Symbol & Comment Memory & 20K Function Block Memory • IEC 61131-3 Included (Ladder, Fn Blk, ST, SFC, IL) and Real Time Clock CJ2M EtherNet/IP • Tag Programming Option Port & USB 2560 I/O, 40 Modules CJ2M-CPU31 CJ2M-CPU32 CJ2M-CPU33 CJ2M-CPU34 CJ2M-CPU35 Built-in Built-in Built-in Built-in Built-in 5K 10K 20K 30K 60K 64K 64K 64K 160K 160K 2 (4 Axis) 2 (4 Axis) 2 (4 Axis) 2 (4 Axis) 2 (4 Axis) 16, 33 16, 33 16, 33 16, 33 16, 33 CJ1M-CPU11-ETN CJ1M-CPU12-ETN CJ1M-CPU13-ETN CJ1G-CPU44 CJ1G-CPU45
NSD-2101-ASST;中文规格书,Datasheet资料
SQT-103-01-F-D;SQT-106-01-LM-D;SQT-110-03-F-D;SQT-120-01-F-S;中文规格书,Datasheet资料
SPECIFICATIONS
For complete specifications see ?SQT
Mates with: TMMH, TMM, MTMM, MMT, TW, LTMM, ZLTMM, ESQT, TCMD
Choice of one through six rows
SQT-106-01-LM-D SQT-112-01-F-D SQT-110-01-L-Q
SQT-110-03-F-D SQT-107-01-L-T SQT-125-01-F-D
(2,29) .050 .090
(2,00) .0787
–RA OPTION
(–Q, –5 & –6 not available)
/
分销商库存信息:
SAMTEC SQT-103-01-F-D SQT-120-01-F-S SQT-110-01-LM-Q SQT-116-01-S-D
TMM/ SQT TMMH
HORIZONTAL
(2,00mm) .0787" pitch
1
NO. PINS PER ROW
LEAD STYLE
(6,35mm) .250"
PLATING OPTION
ROW OPTION
Note: Some lengths, styles and options are non-standard, non-returnable.
20°C
5.5A
(2,62mm) .103" to (5,03mm) .198" Insertion Force: (Single contact only)
40°C
5A
60°C
S21系列产品硬件安装说明书
S21系列产品硬件安装说明第一章 产品概述1.1 产品简介规格列表（表1）S2126G ：24个10Base-T/100Base-TX RJ45端口 2个千兆模块端口 1个Console 串口端 口S2150G ：48个10Base-T/100Base-TX RJ45端口 2个千兆模块端口 1个Console 串口符合标准符合IEEE 802.3-2000标准符合IEEE 802.1D 、IEEE 802.1Q 标准 支持802.1x 基于端口的访问认证 符合IEEE 802.3ab 1000BASE-T 千兆以太网标准 网络介质10Base-T ：3类或3类以上UTP 或STP 100Base-TX ：5类UTP 或STP 100Base-FX ：MMF(多模光纤) 100Base-FX-S ：SMF(单模光纤) 1000Base-TX ：5类UTP 或STP 1000Base-SX ：MMF （多模光纤）1000Base-LX ：SMF （单模光纤）或MMF （多模光纤） POWER电源上电指示RJ45端口 Link/ACT ，100Mbps LEDLED 指示扩展模块 Module ，Link/ACT ，1000Mbps ，100MbpsS2126G ：440mm × 44mm × 240mm 外型 (W ×H ×L)S2150G ：440mm × 44mm × 300mm 使用环境工作温度： 0ｏC 到 40ｏC 存储温度： -40ｏC 到 70ｏC 工作湿度： 10% 到 90% RH存储湿度： 5% 到 90% RHS2126G ：最大功耗约45W （带2个1000Base －T 模块） 功耗S2150G ：最大功耗约80W （带2个1000Base －T 模块） 电源AC 160-240V 48-60Hz表1 S21系列交换机特性和规格列表1. 产品概述对本手册中各部分的内容做了简要的概述，方便用户了解，查找所需。
C-Datasheet_SHT21S_V2
伏的条件下进行测试的精度。 2 在 25°C 和 1 m/s 气流条件下，达到一阶响应 63%时所需的时间。 3 通常工作范围: 0-80%RH, 超出此范围，传感器读数可能会有可逆性慢动 态漂移 (在＞80%RH 环境下 60 小时后的偏差为 3%RH). 更多细节请参考用 户指南 1.1
0.4 0.3 0.4 2.4 1.0 1.0 0.2 0.2
100 80 60 40 20 0 -40 -20 0 20 40 60 80 100 120 Temperature (癈)
正常 范围
最大 范围
图 4 工作条件
0.7 ±7 ±8 ±4 ±6 ±7
1.2
不同温度下的 RH 精度
图 2 中定义了 25°C 时的 RH 精度， 图 中显示了 其他温度段的湿度最大误差。
maximal tolerance
±8 ±6 ±4 ±2 ±0 0 10 20 30 40 50 60 70 80 90 100 Relative Humidity (%RH)
T (°C) ± 2.0 maximal tolerance
± 1.5 ± 1.0 ± 0.5 ± 0.0
-40 -20 0 20 40 60 80 100 120
盛思锐贸易（深圳）有限公司
tel:0755-82521501
fax:0755-82521580
Version2.0 –2011 年 5 月
3/9
Datasheet SHT21S
由于DFN的贴装高度较低，建议使用免清洗type 3 焊锡9，且在回流时用氮净化。
075582521580version202011年5月19sht21s技术手册技术手册温湿度传感器温湿度传感器?完全标定?模拟输出sdm接口?低功耗?优异的长期稳定性?采用dfn封装适于回流焊产品综述产品综述sht21s新一代sensirion湿度和温度传感器在尺寸与智能方面建立了新的标准