LT1800资料

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ELECTRICAL CHARACTERISTICS
T A = 25°C, V S = 5V, 0V; V S = 3V, 0V; V CM = V OUT = half supply, unless otherwise noted.
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS V OL Output Voltage Swing Low (Note 7)No Load1250mV
I SINK = 5mA80160mV
I SINK = 20mA225450mV V OH Output Voltage Swing High (Note 7)No Load1660mV
I SOURCE = 5mA120250mV
I SOURCE = 20mA450750mV I SC Short-Circuit Current V S = 5V2045mA
V S = 3V2040mA I S Supply Current per Amplifier 1.62mA GBW Gain Bandwidth Product Frequency = 2MHz4080MHz SR Slew Rate V S = 5V, A V = –1, R L = 1k, V O = 4V1325V/µs FPBW Full Power Bandwidth V S = 5V, V OUT = 4V P-P2MHz HD Harmonic Distortion V S = 5V, A V = 1, R L = 1k, V O = 2V P-P, f C = 500kHz–75dBc t S Settling Time0.01%, V S = 5V, V STEP = 2V, A V = 1, R L = 1k250ns ∆G Differential Gain (NTSC)V S = 5V, A V = +2, R L = 150Ω0.35%∆θDifferential Phase (NTSC)V S = 5V, A V = +2, R L = 150Ω0.4Deg
The q denotes the specifications which apply over the temperature range of 0°C ≤ T A≤ 70°C. V S = 5V, 0V;
V S = 3V, 0V; V CM = V OUT = half supply, unless otherwise noted.
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS V OS Input Offset Voltage V CM = 0V q125500µV
V CM = 0V (SOT-23)q3001250µV
V CM = V S q0.6 3.5mV
V CM = V S (SOT-23)q0.7 3.75mV ∆V OS Input Offset Shift V CM = 0V to V S – 1.5V q30275µV V OS TC Input Offset Voltage Drift (Note 8)q 1.55µV/°C I B Input Bias Current V CM = 1V q50300nA
V CM = V S – 0.2V q5501750nA I OS Input Offset Current V CM = 1V q25250nA
V CM = V S – 0.2V q25250nA A VOL Large-Signal Voltage Gain V S = 5V, V O = 0.5V to 4.5V, R L = 1k at V S/2q3075V/mV
V S = 5V, V O = 1V to 4V, R L = 100Ω at V S/2q36V/mV
V S = 3V, V O = 0.5V to 2.5V, R L = 1k at V S/2q2575V/mV CMRR Common Mode Rejection Ratio V S = 5V, V CM = 0V to 3.5V q82101dB
V S = 3V, V CM = 0V to 1.5V q7493dB Input Common Mode Range q0V S V PSRR Power Supply Rejection Ratio V S = 2.5V to 10V, V CM = 0V q7491dB Minimum Supply Voltage (Note 6)q 2.3 2.5V V OL Output Voltage Swing Low (Note 7)No Load q1460mV
I SINK = 5mA q100200mV
I SINK = 20mA q300550mV V OH Output Voltage Swing High (Note 7)No Load q2580mV
I SOURCE = 5mA q150300mV
I SOURCE = 20mA q600950mV I SC Short-Circuit Current V S = 5V q2040mA
V S = 3V q2030mA I S Supply Current per Amplifier q2 2.75mA GBW Gain Bandwidth Product Frequency = 2MHz q3575MHz SR Slew Rate V S = 5V, A V = –1, R L = 1k, V O = 4V P-P q1122V/µs
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ELECTRICAL CHARACTERISTICS The q denotes the specifications which apply over the temperature range of –40°C ≤ T A≤ 85°C. V S = 5V, 0V; V S = 3V, 0V; V CM = V OUT = half supply, unless otherwise noted. (Note 5)
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS V OS Input Offset Voltage V CM = 0V q175700µV
V CM = 0V (SOT-23)q4002000µV
V CM = V S q0.754mV
V CM = V S (SOT-23)q0.94mV ∆V OS Input Offset Shift V CM = 0V to V S – 1.5V q30300µV V OS TC Input Offset Voltage Drift (Note 8)q 1.55µV/°C I B Input Bias Current V CM = 1V q50400nA
V CM = V S – 0.2V q6002000nA I OS Input Offset Current V CM = 1V q25300nA
V CM = V S – 0.2V q25300nA A VOL Large-Signal Voltage Gain V S = 5V, V O = 0.5V to 4.5V, R L = 1k at V S/2q2565V/mV
V S = 5V, V O = 1.5V to 3.5V, R L = 100Ω at V S/2q 2.56V/mV
V S = 3V, V O = 0.5V to 2.5V, R L = 1k at V S/2q2065V/mV CMRR Common Mode Rejection Ratio V S = 5V, V CM = 0V to 3.5V q81101dB
V S = 3V, V CM = 0V to 1.5V q7393dB Input Common Mode Range q0V S V PSRR Power Supply Rejection Ratio V S = 2.5V to 10V, V CM = 0V q7390dB Minimum Supply Voltage (Note 6)q 2.3 2.5V V OL Output Voltage Swing Low (Note 7)No Load q1570mV
I SINK = 5mA q105210mV
I SINK = 10mA q170400mV V OH Output Voltage Swing High (Note 7)No Load q2590mV
I SOURCE = 5mA q150350mV
I SOURCE = 10mA q300700mV I SC Short-Circuit Current V S = 5V q12.530mA
V S = 3V q12.530mA I S Supply Current per Amplifier q 2.13mA GBW Gain Bandwidth Product Frequency = 2MHz q3070MHz SR Slew Rate V S = 5V, A V = –1, R L = 1k, V O = 4V q1018V/µs
T A = 25°C, V S = ±5V, V CM = 0V, V OUT = 0V, unless otherwise noted.
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS V OS Input Offset Voltage V CM = V S–150500µV
V CM = V S– (SOT-23)4001000µV
V CM = V S+0.7 3.5mV
V CM = V S+ (SOT-23)1 4.5mV ∆V OS Input Offset Shift V CM = V S– to V S+ – 1.5V30475µV I B Input Bias Current V CM = V S– + 1V25350nA
V CM = V S+4001500nA I OS Input Offset Current V CM = V S– + 1V20250nA
V CM = V S+20250nA Input Noise Voltage0.1Hz to 10Hz 1.4µV P-P e n Input Noise Voltage Density f = 10kHz8.5nV/√Hz i n Input Noise Current Density f = 10kHz1pA/√Hz C IN Input Capacitance f = 100kHz2pF
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ELECTRICAL CHARACTERISTICS
T A = 25°C, V S = ±5V, V CM = 0V, V OUT = 0V, unless otherwise noted.
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS A VOL Large-Signal Voltage Gain V O = –4V to 4V, R L = 1k2570V/mV
V O = –2V to 2V, R L = 100Ω 2.57V/mV CMRR Common Mode Rejection Ratio V CM = V S– to 3.5V85109dB Input Common Mode Range V S–V S+V PSRR Power Supply Rejection Ratio V S+ = 2.5V to 10V, V S– = 0V8097dB V OL Output Voltage Swing Low (Note 7)No Load1560mV
I SINK = 5mA85170mV
I SINK = 20mA225450mV V OH Output Voltage Swing High (Note 7)No Load1770mV
I SOURCE = 5mA130260mV
I SOURCE = 20mA450750mV I SC Short-Circuit Current3050mA I S Supply Current per Amplifier 1.8 2.75mA GBW Gain Bandwidth Product Frequency = 2MHz70MHz SR Slew Rate A V = –1, R L = 1k, V O = ±4V, Measured at V O = ±2V23V/µs FPBW Full Power Bandwidth V O = 8V P-P0.9MHz HD Harmonic Distortion A V = 1, R L = 1k, V O = 2V P-P, f C = 500kHz–75dBc t S Settling Time0.01%, V STEP = 5V, A V = 1V, R L = 1k300ns ∆G Differential Gain (NTSC)A V = +2, R L = 150Ω0.35%∆θDifferential Phase (NTSC)A V = +2, R L = 150Ω0.2Deg
The q denotes the specifications which apply over the temperature range of 0°C ≤ T A≤ 70°C. V S = ±5V, V CM = 0V, V OUT = 0V, unless otherwise noted.
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS V OS Input Offset Voltage V CM = V S–q200800µV
V CM = V S– (SOT-23)q4501500µV
V CM = V S+q0.754mV
V CM = V S+ (SOT-23)q15mV ∆V OS Input Offset Shift V CM = V S– to V S+ – 1.5V q45675µV V OS TC Input Offset Voltage Drift (Note 8)q 1.55µV/°C I B Input Bias Current V CM = V S– + 1V q30400nA
V CM = V S+ – 0.2V q4501750nA I OS Input Offset Current V CM = V S– + 1V q25300nA
V CM = V S+ – 0.2V q25300nA A VOL Large-Signal Voltage Gain V O = –4V to 4V, R L = 1k q2055V/mV
V O = –2V to 2V, R L = 100Ωq25V/mV CMRR Common Mode Rejection Ratio V CM = V S– to 3.5V q82105dB Input Common Mode Range q V S–V S+V PSRR Power Supply Rejection Ratio V S+ = 2.5V to 10V, V S– = 0V q7491dB V OL Output Voltage Swing Low (Note 7)No Load q1770mV
I SINK = 5mA q105210mV
I SINK = 20mA q250575mV V OH Output Voltage Swing High (Note 7)No Load q2590mV
I SOURCE = 5mA q150310mV
I SOURCE = 20mA q600975mV
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ELECTRICAL CHARACTERISTICS The q denotes the specifications which apply over the temperature range of 0°C ≤ T A≤ 70°C. V S = ±5V, V CM = 0V, V OUT = 0V, unless otherwise noted.
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS I SC Short-Circuit Current q2545mA I S Supply Current per Amplifier q 2.4 3.5mA GBW Gain Bandwidth Product Frequency = 2MHz q70MHz SR Slew Rate A V = –1, R L = 1k, V O = ±4V, Measured at V O = ±2V q20V/µs
The q denotes the specifications which apply over the temperature range of –40°C ≤ T A≤ 85°C. V S = ±5V, V CM = 0V, V OUT = 0V, unless otherwise noted.
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS V OS Input Offset Voltage V CM = V S–q350900µV
V CM = V S– (SOT-23)q5002250µV
V CM = V S+q0.75 4.5mV
V CM = V S+ (SOT-23)q1 5.5mV ∆V OS Input Offset Shift V CM = V S– to V S+ – 1.5V q50750µV V OS TC Input Offset Voltage Drift (Note 8)q 1.55µV/°C I B Input Bias Current V CM = V S– + 1V q50450nA
V CM = V S+ – 0.2V q4502000nA I OS Input Offset Current V CM = V S– + 1V q25350nA
V CM = V S+ – 0.2V q25350nA A VOL Large-Signal Voltage Gain V O = –4V to 4V, R L = 1k q1655V/mV
V O = –1V to 1V, R L = 100Ωq25V/mV CMRR Common Mode Rejection Ratio V CM = V S– to 3.5V q81104dB Input Common Mode Range q V S–V S+V PSRR Power Supply Rejection Ratio V S+ = 2.5V to 10V, V S– = 0V q7390dB V OL Output Voltage Swing Low (Note 7)No Load q1580mV
I SINK = 5mA q105220mV
I SINK = 10mA q170400mV V OH Output Voltage Swing High (Note 7)No Load q25100mV
I SOURCE = 5mA q150350mV
I SOURCE = 10mA q300700mV I SC Short-Circuit Current q12.530mA I S Supply Current per Amplifier q 2.64mA GBW Gain Bandwidth Product Frequency = 2MHz q65MHz SR Slew Rate A V = –1, R L = 1k, V O = ±4V, Measured at V O = ±2V q15V/µs
Note 1: Absolute Maximum Ratings are those values beyond which the life of the device may be impaired.
Note 2: The inputs are protected by back-to-back diodes and by ESD diodes to the supply rails. If the differential input voltage exceeds 1.4V or either input goes outside the rails, the input current should be limited to less than 10mA.
Note 3: A heat sink may be required to keep the junction temperature below the absolute maximum rating when the output is shorted indefinitely.
Note 4: The LT1800C/LT1800I are guaranteed functional over the temperature range of –40°C to 85°C.Note 5: The LT1800C is guaranteed to meet specified performance from 0°C to 70°C. The LT1800C is designed, characterized and expected to meet specified performance from –40°C to 85°C but is not tested or QA sampled at these temperatures. The LT1800I is guaranteed to meet specified performance from –40°C to 85°C.
Note 6: Minimum supply voltage is guaranteed by power supply rejection ratio test.
Note 7: Output voltage swings are measured between the output and power supply rails.
Note 8: This parameter is not 100% tested.
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A V = –1
R F = R G = 1k R L = 1k
V S = ±2.5V
Slew Rate vs Temperature
TIME (SECONDS)
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V S = 5V, 0V
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APPLICATIO S I FOR ATIO
W U
U
U of Q16 is nominally equal to the base current of the input devices. The base current of Q16 is then mirrored by devices Q17-Q19 to cancel the base current of the input devices Q1-Q2.
A pair of complementary common emitter stages Q14/Q15that enable the output to swing from rail to rail constructs the output stage. The capacitors C2 and C3 form the local feedback loops that lower the output impedance at high frequency. These devices are fabricated on Linear Technology’s proprietary high-speed complementary bi-polar process.Power Dissipation
The LT1800 amplifier is offered in a small package, SOT-23,which has a thermal resistance of 250°C/W, θJA . So there is a need to ensure that the die’s junction temperature should not exceed 150°C. Junction temperature T J is calculated from the ambient temperature T A , power dissi-pation P D and thermal resistance θJA :T J = T A + (P D • θJA )
The power dissipation in the IC is the function of the supply voltage, output voltage and the load resistance. For a given supply voltage, the worst-case power dissipation P DMAX occurs at the maximum supply current and the output voltage is at half of either supply voltage (or the maximum swing is less than 1/2 supply voltage). P DMAX is given by:P DMAX = (V S • I SMAX ) + (V S /2)2/R L
Example: An LT1800 in a SOT-23 package operating on ±5V supplies and driving a 50Ω load, the worst-case power dissipation is given by:
P DMAX = (10 • 4mA) + (2.5)2/50 = 0.04 + 0.125 = 0.165W The maximum ambient temperature that the part is al-lowed to operate is:
T A = T J – (P DMAX • 250°C/W)
= 150°C – (0.165W • 250°C/W) = 108°C Input Offset Voltage
The offset voltage will change depending upon which input stage is active. The PNP input stage is active from the negative supply rail to 1.2V of the positive supply rail, then
the NPN input stage is activated for the remaining input range up to the positive supply rail during which the PNP stage remains inactive. The offset voltage is typically less than 75µV in the range that the PNP input stage is active.Input Bias Current
The LT1800 employs a patent-pending technique to trim the input bias current to less than 250nA for the input common mode voltage of 0.2V above negative supply rail to 1.2V of the positive rail. The low input offset voltage and low input bias current of the LT1800 provide the precision performance especially for high source imped-ance applications.Output
The LT1800 can deliver a large output current, so the short-circuit current limit is set around 50mA to prevent damage to the device. Attention must be paid to keep the junction temperature of the IC below the absolute maxi-mum rating of 150°C (refer to the Power Dissipation section) when the output is continuously short circuited.The output of the amplifier has reverse-biased diodes connected to each supply. If the output is forced beyond either supply, unlimited current will flow through these diodes. If the current is transient and limited to several hundred mA, and the total supply voltage is less than 12.6V, the absolute maximum rating, no damage will occur to the device.Overdrive Protection
When the input voltage exceeds the power supplies, two pairs of crossing diodes D1 to D4 will prevent the output from reversing polarity. If the input voltage exceeds either power supply by 700mV, diode D1/D2 or D3/D4 will turn on to keep the output at the proper polarity. For the phase reversal protection to perform properly, the input current must be limited to less than 10mA. If the amplifier is severely overdriven, an external resistor should be used to limit the overdrive current.
The LT1800’s input stages are also protected against a large differential input voltage of 1.4V or higher by a pair of back-back diodes D5/D8 to prevent the emitter-base breakdown of the input transistors. The current in these
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Information furnished by Linear Technology Corporation is believed to be accurate and reliable. However, no responsibility is assumed for its use. Linear Technology Corporation makes no represen-tation that the interconnection of its circuits as described herein will not infringe on existing patent rights.15
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LT/TP 0402 2K • PRINTED IN USA
© LINEAR TECHNOLOGY CORPORA TION 2001
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