MMBT5551贴片三极管规格书
常用贴片三极管主要参数及丝印
3F
44 BC875C PNP 225 100 50 45 420/800 2 5 0.65 100 5 100
3G
常用贴片三极管主要参数 (SOT-23)
序号
型号
TYPE
极性 PD
POLA RITY (mW)
IC BVCBO BVCEO
(mA) (V) (V)
hFE
Min/Max
IC
mA
VCE
Volts
Y11
17 M8550 PNP 200 1000 40 25 85/300 100 1 0.5 800 80 150
Y21
18 MMBT5551 NPN 300 600 180 160 80/250 10 5.O 0.5 50 5.O 80
G1
19 MMBT5401 PNP 300 600 160 150 100/200 10 5.O 0.5 50 0.5 100
2TY
8 SS8050 NPN 100 1500 40 25 85/300 100 1 0.5 800 80 80
Y1
9 SS8550 PNP 100 1500 40 25 85/300 100 1 0.5 800 80 80
Y2
10 C1815 NPN 200 150 60 500 130/400 2 6 0.25 100 10 80
62 KTC3265 NPN 200 800 35 30 100/320 100 1 0.5 500 20 120
EO、EY
63 KTC3875 NPN 150 150 60 50 70/700 2 6 0.25 100 10 80 ALO.ALY.ALG.ALL
64 KTC3880S NPN 150 20 40 30 40/200 1 6 0.25 100 10 550 AQR、AQO、AQY
2n5551三极管参数
2n5551三极管参数2n5551是一种NPN型三极管，常用于低功耗放大电路和开关电路中。
它具有以下几个主要参数：1. 最大集电极电压（VCEO）：2n5551的最大集电极电压为160V。
这意味着在正常工作条件下，集电极与发射极之间的电压不应超过160V，否则可能会导致器件损坏。
2. 最大集电极电流（IC）：2n5551的最大集电极电流为600mA。
这表示在正常操作下，集电极电流不应超过600mA，否则可能会导致器件过热。
3. 最大发射极-基极电压（VEBO）：2n5551的最大发射极-基极电压为6V。
这意味着在正常工作条件下，发射极与基极之间的电压不应超过6V，否则可能会导致器件损坏。
4. 最大功耗（PD）：2n5551的最大功耗为500mW。
这表示在正常操作下，器件的功耗不应超过500mW，否则可能会导致器件过热。
5. 封装类型：2n5551通常采用TO-92封装，这种封装形式便于焊接和安装。
6. 增益（hFE）：2n5551的直流电流放大倍数（hFE）通常在70至400之间。
这意味着当基极电流为1mA时，集电极电流可能会放大70到400倍。
除了以上主要参数外，2n5551还具有一些其他重要参数，如最大反向漏电流（IR）和最大噪声系数等。
这些参数对于特定应用中的电路设计和性能评估也很重要。
总结起来，2n5551是一种常用的NPN型三极管，具有最大集电极电压160V、最大集电极电流600mA、最大发射极-基极电压6V等参数。
它的特点是功耗低、封装方便，适用于低功耗放大电路和开关电路的设计。
在选择和使用2n5551时，我们应该根据具体的应用需求，合理利用这些参数来确保电路的可靠性和性能。
MMBT5551中文资料_数据手册_参数
10
100
200
COLLECTOR CURRENT I (mA) C
C / C ——
ob
ib
V /V
CB
EB
C ib
f=1MHz
I =0 / I =0
E
C
T =25℃ a
C ob
COLLECTOR CURRENT I (mA) C
TRANSITION FREQUENCY f (MHz) T
1
0.2
0.4
180 160
6 600 300 416 150 -55～+150
Unit V V V mA
mW ℃/W
℃ ℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Collector-base breakdown voltage Collector-emitter breakdown voltage
C,Mar,2013
Typical Characteristics
MMBT5551
COLLECTOR CURRENT I (mA) C
Static Characteristic
18
90uA
COMMON
EMITTER
15
80uA T =25℃
a
70uA
12
60uA
50uA
9
40uA
6
30uA
I =20uA
IEBO hFE(1) * hFE(2) * hFE(3) * VCE(sat)1* VCE(sat)2* VBE(sat)1* VBE(sat)2*
MMBT5401贴片三极管规格书
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTDSOT-23 Plastic-Encapsulate TransistorsMMBT5401 TRANSISTOR (PNP) FEATURES● Complementary to MMBT5551● Ideal for Medium Power Amplification and SwitchingMARKING: 2LMAXIMUM RATINGS (T a =25℃ unless otherwise noted)Symbol Parameter Value UnitV CBOCollector-Base Voltage -160 V V CEOCollector-Emitter Voltage -150 V V EBOEmitter-Base Voltage -5 V I CCollector Current -0.6 A P CCollector Power Dissipation 0.3 W R ΘJAThermal Resistance from Junction to Ambient 416 ℃/W T jJunction Temperature 150 ℃ T stg Storage Temperature -55～+150℃ ELECTRICAL CHARACTERISTICS (T a =25℃ unless otherwise specified) ParameterSymbol Test conditions Min Typ Max Unit Collector-base breakdown voltageV (BR)CBO I C =-100µA, I E =0 -160 V Collector-emitter breakdown voltageV (BR)CEO * I C =-1mA, I B =0 -150 V Emitter-base breakdown voltageV (BR)EBO I E =-10µA, I C =0 -5 V Collector cut-off currentI CBO V CB =-120V, I E =0 -0.1 μA Emitter cut-off currentI EBO V EB =-4V, I C =0 -0.1 μA h FE(1) * V CE =-5V, I C =-1mA 80 h FE(2) *V CE =-5V, I C =-10mA 100 300 DC current gain h FE(3) * V CE =-5V, I C =-50mA 50 V CE(sat)1*I C =-10mA, I B =-1mA -0.2 V Collector-emitter saturation voltage V CE(sat)2*I C =-50mA, I B =-5mA -0.5 V V BE(sat)1*I C =-10mA, I B =-1mA -1 V Base-emitter saturation voltage V BE(sat)2*I C =-50mA, I B =-5mA -1 V Transition frequencyf T V CE =-5V,I C =-10mA, f=30MHz 100 MHz*Pulse test: pulse width ≤300μs, duty cycle ≤ 2.0%.CLASSIFICATION OF h FE (2)RANK LH RANGE 100-200 200-300C,Nov,2012 【南京南山半导体有限公司 — 长电贴片三极管选型资料】-0.0-0.2-0.4-0.6-0.8-1.0-0.1-1-10-1000255075100125150-0-2-4-6-8-10-12-14-16-18-20-0-5-10-15-20-25-3050100150200250300B A S E -E M I T T E R S A T U R A T IO NVOLTA GEV B Esa t(V)CO L L E C T O R C U R R E N T I C(mA )I h —— AMBIENT TEMPERATURE Ta ()℃ C O L L E C T O R C U R R E N T I C(m A )Static CharacteristicMMBT5401Typical Characteristics COLLECTOR CURRENT I C (mA)T RAN S I T I O NFRE Q UE N CYfT(M H z )C,Nov,2012 【南京南山半导体有限公司 — 长电三极管选型资料】The bottom gasketThe top gasket3000×1 PCS 3000×15 PCS Label on the Reel Label on the Inner Box Label on the Outer Box QA Label Seal the boxwith the tape Seal the boxwith the tape Stamp “EMPTY”on the empty box Inner Box: 210 mm × 208 mm ×203 mm Outer Box: 440 mm × 440 mm × 230 mm。
FOSAN富信电子 三极管 MMBT5551-产品规格书
安徽富信半导体科技有限公司ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO.,LTD.MMBT5551 SOT-23Bipolar Transistor双极型三极管▉Features特点NPN High Voltage高压▉Absolute Maximum Ratings最大额定值Characteristic特性参数Symbol符号Rat额定值Unit单位Collector-Base Voltage集电极基极电压V CBO180V Collector-Emitter Voltage集电极发射极电压V CEO160V Emitter-Base Voltage发射极基极电压V EBO6V Collector Current集电极电流I C600mA Power dissipation耗散功率P C(T a=25℃)300mW Thermal Resistance Junction-Ambient热阻RΘJA417℃/WJunction and Storage TemperatureT J,T stg-55to+150℃结温和储藏温度■Device Marking产品打标H FE(2)100-200200-300Marking G1ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO.,LTD.MMBT5551■ElectricalCharacteristics 电特性(T A =25℃unless otherwise noted 如无特殊说明，温度为25℃)Characteristic 特性参数Symbol 符号Min 最小值Type 典型值Max 最大值Unit 单位Collector-Base Breakdown V oltage集电极基极击穿电压(I C =100uA ，I E =0)BV CBO 180——V Collector-Emitter Breakdown Voltage 集电极发射极击穿电压(I C =1mA ，I B =0)BV CEO 160——V Emitter-Base Breakdown V oltage发射极基极击穿电压(I E =10uA ，I C =0)BV EBO 6——V Collector-Base Leakage Current集电极基极漏电流(V CB =180V ，I E =0)I CBO ——100nA Collector-Emitter Leakage Current集电极发射极漏电流(V CE =120V ，I B =0)I CEO ——100nA Emitter-Base Leakage Current发射极基极漏电流(V EB =6V ，I C =0)I EBO ——100nADC Current Gain直流电流增益(V CE =5V ，I C =1mA)H FE (1)80——DC Current Gain直流电流增益(V CE =5V ，I C =10mA)H FE (2)100—300DC Current Gain直流电流增益(V CE =5V ，I C =100mA)H FE (3)50——Collector-Emitter Saturation Voltage集电极发射极饱和压降(I C =10mA ，I B =1mA)(I C =50mA ，I B =5mA)V CE(sat)——0.150.2VBase-Emitter Saturation V oltage基极发射极饱和压降(I C =10mA ，I B =1mA)(I C =50mA ，I B =5mA)V BE(sat)——11V Transition Frequency特征频率(V CE =10V ，I C =10mA)f T 100—300MH Z Output Capacitance输出电容(V CB =10V ，I E =0,f=1MH Z )C ob—6—pFANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO.,LTD.MMBT5551■Typical Characteristic Curve典型特性曲线ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO.,LTD.MMBT5551■Dimension外形封装尺寸Symbol Dimensions In Millimeters Dimensions In Inches Min Max Min Max A 0.900 1.1500.0350.045A10.0000.1000.0000.004A20.900 1.0500.0350.041b 0.3000.5000.0120.020c 0.0800.1500.0030.006D 2.800 3.0000.1100.118E 1.200 1.4000.0500.055E1 2.2502.5500.0890.100e 0.950TYP0.037TYPe1 1.8002.0000.0710.079L 0.550REF0.022REFL10.3000.5000.0120.020θ0o8o 0o8o。
贴片三极管参数
贴片三极管型号查询直插封装的型号贴片的型号9011 1T 9012 2T 9013 J3 9014 J6 9015 M6 9016 Y6 9018 J8S8050 J3YS8550 2TY 8050 Y1 8550 Y2 2SA1015 BA2SC1815 HF2SC945 CR MMBT3904 1AM MMBT3906 2A MMBT2222 1P MMBT5401 2L MMBT5551 G1 MMBTA42 1D MMBTA92 2DBC807-16 5ABC807-25 5BBC807-40 5CBC817-16 6ABC817-25 6BBC817-40 6CBC846A 1A BC846B 1B BC847A 1E BC847B 1F BC847C 1G BC848A 1JBC848B 1K BC848C 1L BC856A 3A BC856B 3B BC857A 3E BC857B 3F BC858A 3JBC858B 3K BC858C 3L2SA733 CSUN2111 V1UN2112 V2UN2113 V3UN2211 V4UN2212 V5UN2213 V62SC3356 R232SC3838 AD2N7002 702我也补充点：用贴片三极管代码查找贴片三极管资料及其封装(24)Z3 SOT23 BZX84-C5V6 C 0.3W zener 5.6VZ4 SOD323 PDZ3.6B I 3.6V 0.4W zenerZ4 SOT23 BZX84-C6V2 zener.Z4 SOT23 BZX84-C6V2 C 0.3W zener 6.2VZ5 SOD323 PDZ3.9B I 3.9V 0.4W zenerZ5 SOT23 BZX84-C6V8 zener.Z5 SOT23 BZX84-C6V8 C 0.3W zener 6.8VZ6 SOD323 PDZ4.3B I 4.3V 0.4W zenerZ6 SOT23 BZX84-C7V5 zener.Z6 SOT23 BZX84-C7V5 C 0.3W zener 7.5VZ7 SOD323 PDZ4.7B I 4.7V 0.4W zenerZ7 SOT23 BZX84-C8V2 zener.Z7 SOT23 BZX84-C8V2 C 0.3W zener 8.2VZ8 SOD323 PDZ5.1B I 5.1V 0.4W zenerZ8 SOT23 BZX84-C9V1 zener.Z8 SOT23 BZX84-C9V1 C 0.3W zener 9.1VZ8 SOT23 SST308 JFETZ9 SOD323 PDZ5.6B I 5.6V 0.4W zenerZ9 SOT23 BZX84-C10 zener.Z9 SOT23 BZX84-C10 C 0.3W zener 10VZ9 SOT23 SST309 JFETZA SOD110 BZX284-C7V5 I 0.4W zener 7.5V 5% ZA SOD323 PDZ6.2B I 6.2V 0.4W zenerZB SOD110 BZX284-C8V2 I 0.4W zener 8.2V 5% ZB SOD323 PDZ6.8B I 6.8V 0.4W zenerZB SOT23 FMMT4123 NPNZB SOT23 FMMT4123 N 2N4123ZC SOD110 BZX284-C9V1 I 0.4W zener 9.1V 5% ZC SOD323 PDZ7.5B I 7.5V 0.4W zenerZC SOT23 FMMT4124 NPNZC SOT23 FMMT4124 N 2N4124ZC SOT23 MMBT4124 NPNZC SOT23 SMBT4124 NPNZC SOT23 YTS4124 NPNZD SOD110 BZX284-C10 I 0.4W zener 10V -5% ZD SOD323 PDZ8.2B I 8.2V 0.4W zenerZD SOT23 FMMT4125 PNPZD SOT23 FMMT4125 N 2N4125ZD SOT23 MMBT4125 PNPZD SOT23 MMBT4125 N 2N4125ZD SOT23 YTS4125 PNPZE SOD110 BZX284-C11 I 0.4W zener 11V -5% ZE SOD323 PDZ9.1B I 9.1V 0.4W zenerZE SOT23 FMMT4126 PNPZE SOT23 FMMT4126 N 2N4126ZE SOT23 MMBT4123 N 2N4123ZF SOD110 BZX284-C12 I 0.4W zener 12V -5% ZF SOD323 PDZ10B I 10V 0.4W zenerZG SOD110 BZX284-C13 I 0.4W zener 13V -5% ZG SOD323 PDZ11B I 11V 0.4W zenerZH SOD110 BZX284-C15 I 0.4W zener 15V -5% ZH SOD323 PDZ12B I 12V 0.4W zenerZHK 2W SMD SM2Z5V1 I 5.1V 2W zenerZHL 2W SMD SM2Z5V6 I 5.6V 2W zenerZHW 2W SMD SM2Z12 I 12V 2W zenerZI SOD110 BZX284-C16 I 0.4W zener 16V -5% ZJ SOD110 BZX284-C18 I 0.4W zener 18V -5% ZJ SOD323 PDZ13B I 13V 0.4W zenerZJF 2W SMD SM2Z18 I 18V 2W zenerZJQ 2W SMD SM2Z30 I 30V 2W zenerZK SOD110 BZX284-C20 I 0.4W zener 20V -5% ZK SOD323 PDZ15B I 15V 0.4W zenerZKR 2W SMD SM2Z150 I 150V 2W zenerZL SOD110 BZX284-C22 I 0.4W zener 22V -5% ZL SOD323 PDZ16B I 16V 0.4W zenerZM SOD110 BZX284-C24 I 0.4W zener 24V -5% ZM SOD323 PDZ18B I 18V 0.4W zenerZN SOD110 BZX284-C27 I 0.4W zener 27V -5% ZN SOD323 PDZ20B I 20V 0.4W zenerZO SOD110 BZX284-C30 I 0.4W zener 30V -5% ZP SOD100 BZX284-C33 I 0.4W zener 33V -5% ZP SOD323 PDZ22B I 22V 0.4W zenerZQ SC59 2PB601AQ NPNZQ SOD110 BZX284-C36 I 0.4W zener 36V -5% ZQ SOD323 PDZ24B I 24V 0.4W zenerZ-Q SOT323 2PC4081Q N gp npn hfe 120-270 ZR SC59 2PB601AR NPNZR SOD110 BZX284-C39 I 0.4W zener 39V -5% ZR SOD323 PDZ27B I 27V 0.4W zenerZR SOT323 MSD1819A N npn gp 50VZ-R SOT323 2PC4081R N gp npn hfe 180-390 ZS SC59 2PB601AS NPNZS SOD110 BZX284-C43 I 0.4W zener 43V -5% ZS SOD323 PDZ30B I 30V 0.4W zenerZ-S SOT323 2PC4081S N gp npn hfe 270-560 ZS1 SOT23 ZHCS1000 C schottky 1A 30VZS7 SOT23 ZHCS750 C schottky 0.75A 30VZT SOD110 BZX284-C47 I 0.4W zener 47V -5% ZT SOD323 PDZ33B I 33V 0.4W zenerZTA96 SOT223 PZTA96T1 PNPZtQ SOT323 2PC4081Q N gp npn hfe 120-270 ZtR SOT323 2PC4081R N gp npn hfe 180-390 ZtS SOT323 2PC4081S N gp npn hfe 270-560 ZU SOD110 BZX284-C51 I 0.4W zener 51V -5% ZU SOD323 PDZ36B I 36V 0.4W zenerZV SOD110 BZX284-C56 I 0.4W zener 56V -5% ZW SOD110 BZX284-C62 I 0.4W zener 62V -5% ZX SOD110 BZX284-C68 I 0.4W zener 68V -5% ZY SOD110 BZX284-C75 I 0.4W zener 75V -5%。
贴片SOT-23三极管对应型号
贴片SOT-23三极管型号标识电流V数极性封装S9012 2T1 0.3A 20V PNP SOT-23 S9013 J3 0.3A 25V NPN SOT-23 S9014 J6 0.1A 45V NPN SOT-23 S9015 M6 0.1A 45V PNP SOT-23 S9018 J8 0.05A 15V PNP SOT-23 S8050 J3Y 0.3A 25V NPN SOT-23 S8050 J3Y 0.5A 25V NPN SOT-23 S8550 2TY 0.3A 25V PNP SOT-23 S8550 2TY 0.5A 25V PNP SOT-23 SS8050 Y1 0.8A 25V NPN SOT-23 SS8050 Y1 1.5A 25V NPN SOT-23 SS8550 Y2 0.8A 25V PNP SOT-23 SS8550 Y2 1.5A 25V PNP SOT-23 MMBT3904 1AM 0.2A 40V NPN SOT-23 MMBT3906 2A 0.2A 40V PNP SOT-23 MMBT2222A 1P 0.5A 40V NPN SOT-23 MMBT2907A 2F 0.5A 40V PNP SOT-23 MMBT5401 2L 0.3A 160V PNP SOT-23 MMBT5401 2L 0.6A 160V PNP SOT-23 MMBT5551 G1 0.3A 160V NPN SOT-23 MMBT5551 G1 0.6A 160V NPN SOT-23 MMBTA42 1D 0.5A 300V NPN SOT-23 MMBTA92 2D 0.5A 300V PNP SOT-23 MMBTA44 3D 0.2A 400V NPN SOT-23 MMBTA94 4D 0.2A 400V PNP SOT-23 MMBT4401 2X 0.6A 40V NPN SOT-23 MMBT4403 2T 0.6A 40V PNP SOT-23 MMBTH10 3EM 0.05A 25V NPN SOT-23 MMBD4148 A6 0.2A 100V SOT-23 BAW56 A1 0.2A 85V SOT-23 BAV70 A4 0.2A 70V SOT-23 BAV99 A7 0.2A 70V SOT-23 BAT54 KL1 0.2A 30V SOT-23 BAT54A KL2 0.2A 30V SOT-23 BAT54C KL3 0.2A 30V SOT-23 BAT54S KL4 0.2A 30V SOT-23 BAS16 A6 0.2A 85V SOT-23 BAS21 JS 0.2A 250V SOT-23 1SS181 A3 0.3A 85V SOT-23 1SS184 B3 0.3A 85V SOT-23 1SS226 C3 0.1A 85V SOT-2378L05 L05 0.1A 5V SOT-23 TL431 431 0.1A 2.5V-36V SOT-23 TL432 432 0.1A 1.24V SOT-23 FMMT493 493 1A 60V NPN SOT-23 FMMT591 591 1A 60V PNP SOT-23 KTC3875 ALY 0.15A 50V NPN SOT-23 2SC1815 HF 0.15A 50V NPN SOT-23 2SA1015 BA 0.15A 50V PNP SOT-23 2SC945 CR 0.15A 50V NPN SOT-23 2SA733 CS 0.15A 50V PNP SOT-23 2SC2712 LG 0.15A 50V NPN SOT-23 2SC2712 LY 0.15A 50V NPN SOT-23 2SA1162 SY 0.15A 50V PNP SOT-23 2SC3356 R24 0.1A 12V NPN SOT-23 2SC3356 4G mhz R25. 0.1A 12V NPN SOT-23 2SC3356 7G mhz R25 0.1A 12V NPN SOT-23 2SC1623 L6 0.1A 50V NPN SOT-23 2SC2714 QY 0.02A 30V NPN SOT-23 2SC2757 T33 0.1A 30V NPN SOT-23 2SA1037 FR 0.15A 50V PNP SOT-23 2SC2412 BR 0.15A 50V NPN SOT-23 2SD596 DV4 0.7A 25V NPN SOT-23 2SB624 BV4 0.7A 25V PNP SOT-23 2SD1781 AFR 0.8A 32V NPN SOT-23 2SB1197 AHR 0.8A 32V PNP SOT-23 2SC3265 EY 0.8A 25V NPN SOT-23 2SA1298 IY 0.8A 25V PNP SOT-23 BC846A 1A 0.1A 65V NPN SOT-23 BC846B 1B 0.1A 65V NPN SOT-23 BC847A 1E 0.1A 45V NPN SOT-23 BC847B 1F 0.1A 45V NPN SOT-23 BC847C 1G 0.1A 45V NPN SOT-23 BC848A 1J 0.1A 30V NPN SOT-23 BC848B 1K 0.1A 30V NPN SOT-23 BC848C 1L 0.1A 30V NPN SOT-23 BC856A 3A 0.1A 65V PNP SOT-23 BC856B 3B 0.1A 65V PNP SOT-23 BC857A 3E 0.1A 45V PNP SOT-23 BC857B 3F 0.1A 45V PNP SOT-23 BC857C 3G 0.1A 45V PNP SOT-23 BC858A 3J 0.1A 30V PNP SOT-23 BC858B 3K 0.1A 30V PNP SOT-23 BC858C 3L 0.1A 30V PNP SOT-23 BC807-16 5A 0.5A 45V PNP SOT-23BC807-25 5B 0.5A 45V PNP SOT-23 BC807-40 5C 0.5A 45V PNP SOT-23 BC817-16 6A 0.5A 45V NPN SOT-23 BC817-25 6B 0.5A 45V NPN SOT-23 BC817-40 6C 0.5A 45V NPN SOT-23。
2N5551中文资料(fairchild)中文数据手册「EasyDatasheet - 矽搜」
MMBT5551
350 2.8
357
Units
mW mW/°C °C/W °C/W
2
芯片中文手册,看全文,戳
电气特性
(4)
价值观是在T 符
A = 25°C除非另有说明. 参数
断特性
V（BR）CEO 集电极 - 发射极击穿电压 V（BR）CBO 集电极基击穿电压 V （BR）EBO 发射极基极击穿电压
80
80 250
30
0.15
V
0.20
V
1.0
V
1.0
V
IC =10毫安,V CE = 10 V, F = 100兆赫
100
MHz
VCB = 10 V, I E = 0中,f = 1.0兆赫
6.0
pF
VBE = 0.5 V, I C = 0中,f = 1.0兆赫
20
pF
IC =1.0毫安,V CE = 10 V, f = 1.0 kHz
Value
160 180
6 600 -55到+150
2N5551 / MMBT5551 - NPN通用放大
器
Units
V V V mA °C
热特性
价值观是在T
A = 25°C除非另有说明.
符
参数
PD
RθJC RθJA
器件总功耗
减免上述25℃ 热阻,结到外壳 热阻,结到环境
极大
2N5551
625 5.0 83.3 200
符
参数
A = 25°C除非另有说明.
VCEO
集电极 - 发射极电压
VCBO
集电极基极电压
VEBO
发射基电压
贴片三极管参数和型号查询
45 -65 -45 -30 -30 -45 -32 45 -45 -40 300 -300 250 -250 12 -30 20 25 -30 -50 -30 50 50 30 30 30 20 12 30 40 -40 -60 40 -40 40 -40 -160 160 300 400 -300 40
0.3
100
0.5 0.4 0.25 0.4 0.5 0.5 0.3 0.4 0.4 0.4 0.025 1.4 0.6 0.5 0.5 -0.5 0.3 -0.6 0.6 0.3 -0.7 0.3 0.5 0.7 -0.7 0.7 0.25 0.25 0.25
10 50 100 50 50 50 100 500 150 500 5 200 700 100 800 -800 10 -500 500 100 -100 10 10 500 -500 500 100 10 10
5 -5 -5 -5 -5 -5 -5 5 -5 -4 5 -5 5 -5 2 -5 4 5 -5 -5 -5 5 5 5 4 4 12 2 5 6 -5 -5 6 -5 6 -5 -6 6 6 6 -5 5
0.6 -0.3 -0.3 -0.3 -0.3 -0.3 -0.3 0.35 -0.25 0.6 -0.8 0.6 -0.8 -0.25 0.3 0.4 -0.4 -0.3 -0.25 0.25 0.25 0.25 0.4 0.25 0.4 0.3 -0.4 -0.4 0.2 -0.25 0.4 -0.4 -0.4 0.15 0.5 0.4 -0.5 0.2
, PC (mW) Type 2SA1015M 2SA1036K 2SA1037A K 2SA1162 2SA1515K 2SA1955 2SA1979S 2SA2048 2SA562M POLARITY PNP PNP PNP PNP NPN PNP PNP PNP PNP 300 200 200 150 200 100 200 500 400 200 200 200 200 200 150 200 150 250 300 300 400 100 200 200 200 150 100 150 150 150 150 200 150 150 150 150 IC (mA) -150 -500 -150 -150 -50 -400 -500 -1000 -500 -150 -100 -1000 -700 -100 50 100 20 150 500 150 500 15 500 150 50 150 20 50 20 50 50 150 30 50 30 300 VCBO (V) -50 -40 -60 -50 -120 -15 -40 -30 -35 -60 -60 -15 -30 -45 50 60 30 60 50 60 35 30 40 60 40 60 40 35 30 20 30 55 25 15 25 50 VCEO (V) -50 -32 -50 -50 -120 -12 -32 -30 -30 -50 -50 -15 -25 -45 30 50 20 50 50 50 30 20 32 50 25 50 30 30 25 11 20 50 20 10 20 20 VEBO (V) -5 -5 -6 -5 -5 -5 -5 -6 -5 -5 -5 -6 -5 -7 5 5 4 7 5 5 5 3 5 7 5 5 4 4 4 3 3 5 3 3 3 12 (V) -0.3 -0.4 -0.5 -0.3 -0.5 -0.03 -0.25 -0.3 -0.25 -0.3 -0.3 -0.3 -0.6 -0.5 0.3 0.3 0.3 0.4 0.4 0.25 0.25 0.4 0.4 0.3 0.25 0.4 5 0.7 0.7 0.5 0.5 0.3 VCE(sat) IC (mA) -100 -100 -50 -100 -10 -10 -100 -500 -100 -100 -100 -400 -700 -100 10 100 10 50 150 100 100 100 50 10 100 10 10 10 10 50 20 30
MMST5551贴片三极管 SOT-323三极管封装MMST5551规格参数
A,Oct,2010JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTDSOT-323 Plastic-Encapsulate TransistorsMMST5551 TRANSISTOR (NPN) FEATURES● Complementary to MMST5401● Small Surface Mount Package● Ideal for Medium Power Amplification and Switching MARKING:K4NMAXIMUM RATINGS (T a =25℃ unless otherwise noted) SymbolParameter Value Unit V CBOCollector-Base Voltage 180 V V CEOCollector-Emitter Voltage 160 V V EBOEmitter-Base Voltage 6 V I CCollector Current 600 mA P CCollector Power Dissipation 200 mW R ΘJAThermal Resistance From Junction To Ambient 625 ℃/W T jJunction Temperature 150 ℃ T stg Storage Temperature -55～+150 ℃ ELECTRICAL CHARACTERISTICS (T a=25℃ unless otherwise specified) ParameterSymbol Test conditions Min Typ MaxUnit Collector-base breakdown voltageV (BR)CBO I C =100µA, I E =0 180 V Collector-emitter breakdown voltageV (BR)CEO * I C =1mA, I B =0 160 V Emitter-base breakdown voltageV (BR)EBO I E =10µA, I C =0 6 V Collector cut-off currentI CBO V CB =120V, I E =0 50 nA Emitter cut-off currentI EBO V EB =4V, I C =0 50 nA V CE =5V, I C =1mA 80 V CE =5V, I C =10mA80 300 DC current gain h FE V CE =5V, I C =50mA30 I C =50mA, I B =5mA 0.2 V Collector-emitter saturation voltageV CE(sat) I C =10mA, I B =1mA 0.15 V I C =50mA, I B =5mA 1 V Base-emitter saturation voltageV BE(sat) I C =10mA, I B =1mA 1 V Transition frequencyf T V CE =10V,I C =10mA , f=100MHz 100 300 MHz Collector output capacitance C ob V CB =10V, I E =0, f=1MHz 6 pF *Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%. 【南京南山半导体有限公司 — 长电三极管选型资料】 【南京南山半导体有限公司 — 长电三极管选型资料】The bottom gasketThe top gasket3000×1 PCS 3000×15 PCS Label on the Reel Label on the Inner Box Label on the Outer Box QA Label Seal the boxwith the tape Seal the boxwith the tape Stamp “EMPTY”on the empty box Inner Box: 210mm ×208mm ×２０３m m Outer Box: 440mm ×440mm ×230mm。
常用贴片三极管丝印与型号对照表
9011 1T9012 2T9013 J39014 J69015 M69016 Y6 >>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>> 9018 J8S8050 J3YS8550 2TY8050 Y18550 Y22SA1015 BA2SC1815 HF2SC945 CR >>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>> MMBT3904 1AMMMBT3906 2AMMBT2222 1PMMBT5401 2LMMBT5551 G1MMBTA42 1DMMBTA92 2DBC807-16 5ABC807-25 5BBC807-40 5CBC817-16 6ABC817-25 6BBC817-40 6CBC846A 1ABC846B 1BBC847A 1EBC847B 1FBC847C 1GBC848A 1JBC848B 1KBC848C 1LBC856A 3ABC856B 3BBC857A 3EBC857B 3FBC858A 3JBC858B 3KBC858C 3L >>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>2SA733 CSUN2111 V1UN2112 V2UN2113 V3UN2211 V4UN2212 V5UN2213 V6 >>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>2SC3356 R232SC3838 AD2N7002 702 >>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>> 2SC2062 W。
MMBT5551M3T5G;中文规格书,Datasheet资料
30
VCC = 120 V
20
10 0.2 0.3 0.5
1.0 2.0 3.0 5.0 10 20 30 50 IC, COLLECTOR CURRENT (mA)
100 200
Figure 8. Turn−On Time
t, TIME (ns)
5000
3000
tf @ VCC = 120 V
2000 tf @ VCC = 30 V
Figure 5. Temperature Coefficients
10.2 V
Vin
10 ms INPUT PULSE
tr, tf ≤ 10 ns DUTY CYCLE = 1.0%
VBB - 8.8 V
100
0.25 mF RB
5.1 k
Vin
100
VCC 30 V
3.0 k RC
Vout
1N914
0.2 0.3
MMBT5551M3T5G
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
IC, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1
0 0.005
IC = 1.0 mA
Values Shown are for IC @ 10 mA Figure 6. Switching Time Test Circuit
100 70 50
30 20
10 7.0 5.0
3.0 2.0
1.0 0.2 0.3
TJ = 25°C
Cibo Cobo
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180 160
6 600 300 416 150 -55～+150
Unit V V V mA
mW ℃/W
℃ ℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Collector-base breakdown voltage Collector-emitter breakdown voltage
IEBO hFE(1) * hFE(2) * hFE(3) * VCE(sat)1* VCE(sat)2* VBE(sat)1* VBE(sat)2*
Transition frequency
fT
Collector output capacitance
Cob
*Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%.
QA Label
Label on the Inner Box Inner Box: 210 mm× 208 mm×203 mm
Label on the Outer Box Outer Box: 440 mm× 440 mm× 230 mm
Test conditions IC=100µA, IE=0 IC=1mA, IB=0 IE=10µA, IC=0 VCB=120V, IE=0 VEB=4V, IC=0 VCE=5V, IC=1mA VCE=5V, IC=10mA VCE=5V, IC=50mA IC=10mA, IB=1mA IC=50mA, IB=5mA IC=10mA, IB=1mA IC=50mA, IB=5mA VCE=10V,IC=10mA, f=100MHz VCB=10V, IE=0, f=1MHz
0.6
0.8
1.0
BASE-EMITTER VOLTAGE V (V) BE
150
V =10V CE
T =25℃ a
f —— I
T
C
100
50
1
3
10
20
30
COLLECTOR CURRENT I (mA) C
COLLECTOR POWER DISSIPATION P (W)
C
1 0.1
0.4
1
10
CLASSIFICATION OF hFE (2)
RANK RANGE
L 100-200
1. BASE 2. EMITTER 3. COLLECTOR
Min Typ Max Unit
180
V
160
V
6
V
50
nA
50
nA
80
100
300
50
0.15 V
0.2
V
1
V
1
V
100
300 MHz
6
pF
H 200-300
0°
8°
Dimensions In Inches
Min.
Max.
0.035
0.045
0.000
0.004
0.035
0.041
0.012
0.020
0.003
0.006
0.110
0.118
0.047
0.055
0.089
0.100
0.037 TYP.
0.071
0.079
0.022 REF.
0.012
0.020
10
100
200
COLLECTOR CURRENT I (mA) C
C / C ——
ob
ib
V /V
CB
EB
C ib
f=1MHz
I =0 / I =0
E
C
T =25℃ a
C ob
COLLECTOR CURRENT I (mA) C
TRANSITION FREQUENCY f (MHz) T
1
0.2
0.4
SOT–23
FEATURES z Complementary to MMBT5401 z Ideal for Medium Power Amplification and Switching
MARKING: G1
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
【 南京南山半导体有限公司 — 长电贴片三极管选型资料】
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
MMBT5551 TRANSISTOR (NPN)
Symbol
Parameter
Value
VCBO VCEO VEBO
IC PC RΘJA Tj Tstg
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature
V(BR)CBO V(BR)CEO*
Emitter-base breakdown voltage
V(BR)EBO
Collector cut-off current
Iห้องสมุดไป่ตู้BO
Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage
0°
8°
The bottom gasket
3000×15 PCS
Label on the Reel 3000×1 PCS
Seal the box with the tape
The top gasket
Stamp “EMPTY” on the empty box
Seal the box with the tape
Dimensions In Millimeters
Min.
Max.
0.900
1.150
0.000
0.100
0.900
1.050
0.300
0.500
0.080
0.150
2.800
3.000
1.200
1.400
2.250
2.550
0.950 TYP.
1.800
2.000
0.550 REF.
0.300
0.500
BASE-EMITTER SATURATION
0.2 0.1
1
10
COLLECTOR CURRENT I (mA) C
V —— I
BE
C
200
COMMON EMITTER
V =5V
100
CE
T =100℃ a
T =25℃ a
10
100 200
0.01 1
100
10
CAPACITANCE C (pF)
CE
h —— FE
I
C
T =100℃ a
T =25℃ a
100
10 1
0.3
β=10
0.1
10
100
200
COLLECTOR CURRENT I (mA) C
B V —— I
CEsat
C
T =100℃ a T =25℃ a
(V)
BEsat
VOLTAGE V
COLLECTOR-EMITTER SATURATION
20
REVERSE VOLTAGE V (V)
P —— T
C
a
0.3
0.2
0.1
0.0 0
25
50
75
100
125
150
AMBIENT TEMPERATURE T (℃) a
C,Mar,2013
【 南京南山半导体有限公司 — 长电三极管选型资料】
Symbol
A A1 A2 b c D E E1 e e1 L L1 θ
3
B
0
0
2
4
6
8
10
12
COLLECTOR-EMITTER VOLTAGE V (V) CE
1.0
β=10
V —— I
BEsat
C
0.8
T =25℃ a
0.6
T =100℃ a
0.4
VOLTAGE V
(V)
CEsat
DC CURRENT GAIN h FE
500
COMMON EMITTER V =5V
C,Mar,2013
Typical Characteristics
MMBT5551
COLLECTOR CURRENT I (mA) C
Static Characteristic
18
90uA
COMMON
EMITTER
15
80uA T =25℃
a
70uA
12
60uA
50uA
9
40uA
6
30uA
I =20uA