MMBT5551贴片三极管规格书

3
B
0
0
2
4
6
8
10
12
COLLECTOR-EMITTER VOLTAGE V (V) CE
1Hale Waihona Puke Baidu0
β=10
V —— I
BEsat
C
0.8
T =25℃ a
0.6
T =100℃ a
0.4
VOLTAGE V
(V)
CEsat
DC CURRENT GAIN h FE
500
COMMON EMITTER V =5V
180 160
6 600 300 416 150 -55～+150
Unit V V V mA
mW ℃/W
℃ ℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Collector-base breakdown voltage Collector-emitter breakdown voltage
QA Label
Label on the Inner Box Inner Box: 210 mm× 208 mm×203 mm
Label on the Outer Box Outer Box: 440 mm× 440 mm× 230 mm
C,Mar,2013
Typical Characteristics
MMBT5551
COLLECTOR CURRENT I (mA) C
Static Characteristic
18
90uA
COMMON
EMITTER
15
80uA T =25℃
a
70uA
12
60uA
50uA
9
40uA
6
30uA
I =20uA
20
REVERSE VOLTAGE V (V)
P —— T
C
a
0.3
0.2
0.1
0.0 0
25
50
75
100
125
150
AMBIENT TEMPERATURE T (℃) a
C,Mar,2013
【 南京南山半导体有限公司 — 长电三极管选型资料】
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Symbol
A A1 A2 b c D E E1 e e1 L L1 θ
Dimensions In Millimeters
Min.
Max.
0.900
1.150
0.000
0.100
0.900
1.050
0.300
0.500
0.080
0.150
2.800
3.000
1.200
1.400
2.250
2.550
0.950 TYP.
1.800
2.000
0.550 REF.
0.300
0.500
10
100
200
COLLECTOR CURRENT I (mA) C
C / C ——
ob
ib
V /V
CB
EB
C ib
f=1MHz
I =0 / I =0
E
C
T =25℃ a
C ob
COLLECTOR CURRENT I (mA) C
TRANSITION FREQUENCY f (MHz) T
1
0.2
0.4
BASE-EMITTER SATURATION
0.2 0.1
1
10
COLLECTOR CURRENT I (mA) C
V —— I
BE
C
200
COMMON EMITTER
V =5V
100
CE
T =100℃ a
T =25℃ a
10
100 200
0.01 1
100
10
CAPACITANCE C (pF)
CE
h —— FE
I
C
T =100℃ a
T =25℃ a
100
10 1
0.3
β=10
0.1
10
100
200
COLLECTOR CURRENT I (mA) C
B V —— I
CEsat
C
T =100℃ a T =25℃ a
(V)
BEsat
VOLTAGE V
COLLECTOR-EMITTER SATURATION
IEBO hFE(1) * hFE(2) * hFE(3) * VCE(sat)1* VCE(sat)2* VBE(sat)1* VBE(sat)2*
Transition frequency
fT
Collector output capacitance
Cob
*Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%.
CLASSIFICATION OF hFE (2)
RANK RANGE
L 100-200
1. BASE 2. EMITTER 3. COLLECTOR
Min Typ Max Unit
180
V
160
V
6
V
50
nA
50
nA
80
100
300
50
0.15 V
0.2
V
1
V
1
V
100
300 MHz
6
pF
H 200-300
SOT–23
FEATURES z Complementary to MMBT5401 z Ideal for Medium Power Amplification and Switching
MARKING: G1
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
VCBO VCEO VEBO
IC PC RΘJA Tj Tstg
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature
Test conditions IC=100µA, IE=0 IC=1mA, IB=0 IE=10µA, IC=0 VCB=120V, IE=0 VEB=4V, IC=0 VCE=5V, IC=1mA VCE=5V, IC=10mA VCE=5V, IC=50mA IC=10mA, IB=1mA IC=50mA, IB=5mA IC=10mA, IB=1mA IC=50mA, IB=5mA VCE=10V,IC=10mA, f=100MHz VCB=10V, IE=0, f=1MHz
【 南京南山半导体有限公司 — 长电贴片三极管选型资料】
www.nscn.com.cn
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
MMBT5551 TRANSISTOR (NPN)
0.6
0.8
1.0
BASE-EMITTER VOLTAGE V (V) BE
150
V =10V CE
T =25℃ a
f —— I
T
C
100
50
1
3
10
20
30
COLLECTOR CURRENT I (mA) C
COLLECTOR POWER DISSIPATION P (W)
C
1 0.1
0.4
1
10
V(BR)CBO V(BR)CEO*
Emitter-base breakdown voltage
V(BR)EBO
Collector cut-off current
ICBO
Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage
0°
8°
The bottom gasket
3000×15 PCS
Label on the Reel 3000×1 PCS
Seal the box with the tape
The top gasket
Stamp “EMPTY” on the empty box
Seal the box with the tape
0°
8°
Dimensions In Inches
Min.
Max.
0.035
0.045
0.000
0.004
0.035
0.041
0.012
0.020
0.003
0.006
0.110
0.118
0.047
0.055
0.089
0.100
0.037 TYP.
0.071
0.079
0.022 REF.
0.012
0.020